TWI659497B - Electrostatic adsorption device, electrostatic clamp and cooling processing device - Google Patents

Abstract

Provided is an electrostatic adsorption device that can be used at extremely low temperatures.

In the electrostatic jig of the electrostatic adsorption device, a first insulating layer is provided on a base. The first part of the first insulating layer extends on the first surface of the base, and the second part of the first insulating layer extends over at least a part of the second surface of the base. An adsorption electrode is provided on the first part of the first insulating layer. A second insulating layer is provided on the first part of the first insulating layer and the adsorption electrode. The conductor pattern extends from the adsorption electrode, and the conductor pattern is provided with a power supply terminal on the second part of the first insulating layer. The power supply terminal is in contact with a contact portion of a terminal member that is urged by the urging member. A wiring is connected to the terminal member (the wiring is connected to a power source).

Description

Electrostatic adsorption device, electrostatic clamp and cooling processing device

Embodiments of the present invention relate to an electrostatic adsorption device, an electrostatic clamp, and a cooling treatment device.

In the manufacture of electronic components, various processes are performed on the object to be processed contained in the processing container of the processing device. The processing apparatus is generally provided with a mechanism for holding a processing object accommodated in a processing container. As one of the mechanisms, an electrostatic adsorption device having an electrostatic clamp is known. The electrostatic adsorption device is configured to adsorb an object to be processed to an electrostatic jig by electrostatic force.

The electrostatic clamp generally includes a base, a first insulating layer, a suction electrode, and a second insulating layer. The base is generally made of metal and has a flat upper surface. The first insulating layer is formed on the upper surface of the base. The adsorption electrode is formed on the upper surface of the base via the first insulating layer. The second insulating layer is provided so as to cover the first insulating layer and the adsorption electrode. A hole is formed in the base and the first insulating layer to be connected to the power supply terminal of the adsorption electrode. Wiring passes through this hole. This wiring is connected to the power supply terminal. In addition, a wiring is provided around the wiring and the base. Between the insulating member and the base, an adhesive or a vacuum seal is provided. An electrostatic adsorption device having such an electrostatic jig is described in, for example, Patent Literature 1 and Patent Literature 2 described below.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2012-142413

[Patent Document 2] Japanese Patent Laid-Open No. 2005-57234

However, there is a case where a process of "cooling the object to be processed" is performed as one type of the object to be processed. The object to be processed may be cooled to an extremely low temperature of -60 degrees or lower, for example. Therefore, it is considered that a refrigerating machine for cooling an electrostatic jig is mounted on a processing apparatus. As described above, in a processing apparatus equipped with a refrigerator, when the object to be processed is cooled to an extremely low temperature and the electrostatic jig is cooled, the adhesive and the vacuum seal may be brittle. For this reason, in a processing device that cools the object to be treated to a very low temperature, the reliability of the parts related to the connection of the power supply terminal and the wiring of the suction electrode cannot be ensured, so that the conventional electrostatic suction device may not be used.

Therefore, even in an extremely low temperature environment, it is necessary to be able to ensure the reliability of the connection between the power supply terminal and the wiring of the electrostatic clamp.

In one embodiment, an electrostatic adsorption device is provided. This electrostatic adsorption device is provided with an electrostatic clamp, a terminal member, a force applying means (hereinafter, referred to as a "force applying means"), wiring, and a power source. The electrostatic fixture includes a base, a first insulating layer, a suction electrode, a second insulating layer, and a conductor pattern. The base includes a first surface and a second surface different from the first surface. The first insulating layer is provided on the base. The first insulating layer includes a first portion extending on the first surface of the base and a second portion extending over at least a portion of the second surface of the base. The adsorption electrode is provided on the first part of the first insulating layer. The second insulating layer is provided on the first part of the first insulating layer and the adsorption electrode. The conductive pattern is provided on the first insulating layer and is electrically connected to the adsorption electrode. The conductor pattern includes a power supply terminal provided on the second part of the first insulating layer. The terminal member has a contact portion that abuts the power supply terminal. The force applying means is to apply force to the power supply terminal of the electrostatic clamp by the contact portion of the terminal member. Wiring is electrically connected to the terminal member. In one form, the wiring is electrically connected to the terminal member via a urging means. The power supply is electrically connected to the wiring.

In one embodiment of the electrostatic adsorption device, the contact portion of the terminal member abuts against the power supply terminal, and the contact portion of the terminal member applies a force to the power supply terminal by a force applying means. Therefore, in this electrostatic adsorption device, it is not necessary to provide an adhesive and a vacuum seal at a portion connected to the power supply terminal and the wiring, and the electrical connection between the power supply terminal and the wiring can be ensured. Therefore, the reliability of the connection between the power supply terminal and the wiring can be ensured even in an extremely low temperature environment. Moreover, in this electrostatic adsorption device, A power supply terminal is provided on the second part of the first insulating layer on the second surface of the base. Therefore, it is possible to suppress the destruction of the electrostatic jig caused by the pressure of the urging means.

In one embodiment, the urging means is a screw or an electrostatic adsorption device, and it may further include an insulating support member for supporting the screw. According to this embodiment, the urging means can be executed with a simple configuration, and the insulation between the screw and the base can be ensured.

In one embodiment, the contact portion may include a conductive spring. According to this embodiment, the reliability of the physical contact between the contact portion of the terminal member and the power supply terminal is further improved.

In one embodiment, the second surface of the base includes a region extending in a direction that is not parallel to the first surface, and the power supply terminal may be provided on the second surface through the second portion of the first insulating layer On the area. For example, the area on the second surface may constitute the side surface of the base.

In one embodiment, the electrostatic adsorption device can adsorb the object to be processed at a temperature in the range of -263 ° C to -60 ° C. The lower limit value of the temperature in this range refers to the temperature at which the temperature rise in the object to be treated is added to the lower limit cooling temperature of the freezer itself. In addition, the upper limit value of the temperature in this range refers to a temperature lower than the lower limit temperature that can be achieved by using a general refrigerant such as Galden (registered trademark). At the temperature below the limit, the temperature at which these adhesives and vacuum seals can be made brittle.

In another aspect, an electrostatic clamp is provided. This electrostatic jig is provided with a base, a first insulating layer, Electrode, second insulating layer, and conductor pattern. The base includes a first surface and a second surface different from the first surface. The first insulating layer is provided on the base. The first insulating layer includes a first portion extending on the first surface and a second portion extending over at least a portion of the second surface. The adsorption electrode is provided on the first part of the first insulating layer. The second insulating layer is provided on the first part of the first insulating layer and the adsorption electrode. The conductive pattern is provided on the first insulating layer and is electrically connected to the adsorption electrode. The conductor pattern includes a power supply terminal provided on the second part of the first insulating layer.

In still another aspect, a cooling treatment device is provided. The cooling processing device includes a processing container, an electrostatic adsorption device, and a refrigerator. The electrostatic adsorption device refers to the electrostatic adsorption device of one of the above embodiments or any of the various embodiments. The electrostatic clamp of the electrostatic adsorption device is set in the processing container. The refrigerator is configured to cool an electrostatic jig. This cooling treatment device is capable of cooling the object to be treated to extremely low temperature while ensuring the reliability of the connection between the power supply terminal of the adsorption electrode and the wiring.

As described above, the reliability of the connection between the power supply terminal and the wiring of the electrostatic clamp can be ensured even in an extremely low temperature environment.

10‧‧‧ Cooling treatment device

12‧‧‧handling container

14‧‧‧ electrostatic adsorption device

16‧‧‧Freezer

18‧‧‧ the first decompression unit

20‧‧‧The second decompression section

22‧‧‧ Valve

24‧‧‧Gas Supply Department

26‧‧‧ support

32‧‧‧lift pin

34‧‧‧Drive

36‧‧‧Gas line

38‧‧‧Gas Supply Department

50‧‧‧Terminal member

50c‧‧‧Contact

52‧‧‧Force (screw)

54‧‧‧Wiring

56‧‧‧ Power

ESC‧‧‧ Electrostatic Fixture

60‧‧‧ base

601‧‧‧Part 1

602‧‧‧Part 2

60s‧‧‧side

60b‧‧‧ below

60c‧‧‧Concave

60r‧‧‧area

62‧‧‧The first insulation layer

621‧‧‧Part 1

622‧‧‧Part 2

64‧‧‧ Adsorption electrode

64a‧‧‧first electrode

64b‧‧‧Second electrode

66‧‧‧Second insulation layer

66b‧‧‧underside

66a‧‧‧ protrusion

66p‧‧‧ protrusion

72‧‧‧ Conductor pattern

72a‧‧‧The first conductor pattern

72b‧‧‧ 2nd conductor pattern

74‧‧‧Power supply terminal

74a‧‧‧The first power supply terminal

74b‧‧‧ 2nd power supply terminal

80‧‧‧ support member

80m‧‧‧Main

80p‧‧‧ protrusion

80h‧‧‧hole

84‧‧‧washer

100‧‧‧treatment system

[FIG. 1] A diagram schematically showing a processing system according to an embodiment.

[Fig. 2] A diagram schematically showing a cooling treatment device according to an embodiment.

[Fig. 3] A perspective view of an electrostatic adsorption device according to an embodiment.

[Fig. 4] A sectional view of an electrostatic jig according to an embodiment.

[FIG. 5] An enlarged perspective view showing a partial area of a power supply terminal including an electrostatic clamp according to an embodiment.

[Fig. 6] An enlarged sectional view showing a part of an electrostatic adsorption device according to an embodiment.

[FIG. 7] A cross-sectional view of an example MTJ element.

Hereinafter, various embodiments will be described in detail with reference to the drawings. In each drawing, the same or corresponding parts are denoted by the same reference numerals.

First, a processing system according to an embodiment will be described. FIG. 1 is a diagram schematically showing a processing system according to an embodiment. The processing system 100 shown in FIG. 1 refers to a system for processing an object to be processed (hereinafter, referred to as “wafer W”). The processing system 100 includes a mounting table 102a to 102c, storage containers 104a to 104c, a load module LM, a load lock chamber LL1 and a load lock chamber LL2, a plurality of process modules PM, and a transfer chamber 110.

The mounting tables 102a to 102c are provided along the loading module LM. In the illustrated embodiment, the mounting tables 102a to 102c are arranged in the X direction along the edge portion on one side of the loading module LM, that is, the edge portion on the other side in the Y direction. Mounted on the mounting tables 102a to 102c There are storage containers 104a to 104c. These storage containers 104a to 104c are used to store wafers W.

The loading module LM has a slightly box shape with a longer side in the X direction than the Y direction in one embodiment. The loading module LM has a chamber wall, and a transportation space in an atmospheric pressure state is provided in the chamber wall. The loading module LM includes a transfer unit TU in the transfer space. The transfer unit TU of the load module LM is used to remove the wafer W from the storage container selected from the storage containers 104a to 104c, and transfer the removed wafer W to the load lock chamber LL1 and the load lock chamber LL2. Either.

The load lock chamber LL1 and the load lock chamber LL2 are arranged along the edge portion on the other side in the Y direction of the load module LM and are arranged in the X direction. A transmission chamber 110 is provided on the other side in the Y direction of the loading module LM. As shown in FIG. 1, the load lock chambers LL1 and LL2 are disposed between the load module LM and the transfer chamber 110. Between the load lock chamber LL1 and the load module LM, between the load lock chamber LL1 and the transfer chamber 110, between the load lock chamber LL2 and the load module LM, between the load lock chamber LL2 and the transfer chamber 110 There are gate valves respectively.

The load lock chamber LL1 and the load lock chamber LL2 provide a preliminary decompression chamber. The wafer W is transferred to the load lock chamber LL1 or LL2 before being transferred to the transfer chamber 110 and is placed in a reduced pressure environment from an atmospheric pressure environment.

The transfer chamber 110 provides a pressure-reducible transfer space. The The conveying space extends in the Y direction in one embodiment. The transfer chamber 110 has a transfer unit TU2 in the transfer space. The transfer unit TU2 moves the wafer W in the Y direction in the transfer space. The transfer unit TU2 transfers the wafer W to any one of a plurality of process modules PM. A gate valve is provided between the transfer chamber 110 and each of the plurality of process modules PM.

In the embodiment shown in FIG. 1, a part of the process modules in the process module PM is arranged along the edge on one side of the X direction of the transfer chamber 110 in the Y direction. In addition, the other process modules PM are arranged along the edge on the other side in the X direction of the transfer chamber 110 and are arranged in the Y direction. Each of the plurality of process modules PM processes a wafer W housed therein. For example, each of the plurality of process modules PM is a process module that performs a dedicated process in various processes such as physical vapor deposition processing, pre-processing cleaning, heating processing, and cooling processing.

In the processing system 100 according to the embodiment shown in FIG. 1, the wafer W accommodated in any one of the storage containers 104 a to 104 c passes through the load module LM, the load lock chamber LL1 or the load lock chamber LL2 and the transfer chamber. The chamber 110 is transferred to any one of the plurality of process modules PM, and is processed in the process module at the transfer end point.

The processing system 100 shown in FIG. 1 is one or two or more process modules among a plurality of process modules PM, and includes a cooling processing device according to an embodiment. Fig. 2 is a diagram schematically showing a cooling treatment device according to an embodiment. FIG. 2 schematically shows an embodiment of the present invention. The vertical cross-sectional structure of the cooling processing device 10.

The cooling processing device 10 shown in FIG. 2 includes a processing container 12, an electrostatic adsorption device 14, and a refrigerator 16. The processing container 12 has a substantially cylindrical shape and provides a space S in the inside. An opening is formed in the processing container 12 for carrying the wafer W into or from the space S, and the opening can be opened and closed by the gate valve GV.

The cooling treatment device 10 may further include a first pressure reducing unit 18, a second pressure reducing unit 20, a valve 22, and a gas supply unit 24. The first decompression unit 18 is connected to the processing container 12 to decompress the space S. The first decompression unit 18 includes a vacuum pump 18p and a valve 18v. The vacuum pump 18p is connected to the processing container 12 via a valve 18v.

The second decompression unit 20 is connected to the processing container 12. The second decompression section 20 is provided so that the pressure in the space S becomes lower than the pressure that can be achieved by the first decompression section 18. That is, the cooling treatment device 10 can operate the first decompression unit 18 while decompressing the space S from the pressure in the space S to atmospheric pressure, and then the second decompression unit 20 action. In one embodiment, the second decompression unit 20 includes a turbo molecular pump 20t, a water pump 20w, and a valve 20v.

The valve 22 is a valve which is opened when the pressure of the space S in the processing container 12 is set to atmospheric pressure. The valve 22 is opened, for example, during maintenance of the cooling treatment device 10.

The gas supply unit 24 is provided to supply gas into the processing container 12. The gas supply unit 24 is, for example, subjected to a cooling process When the apparatus 10 cools the wafer W, it is supplied into the processing container 12. The gas supply unit 24 is capable of supplying a rare gas such as Ar gas. Therefore, the gas supply unit 24 includes a gas source 24s, a valve 24a, a flow controller 24f such as a mass flow controller, and a valve 24b. The gas source 24s is connected to the processing container 12 via a valve 24a, a flow controller 24f, and a valve 24b.

As shown in FIG. 2, an electrostatic clamp ESC as a part of the electrostatic adsorption device 14 is housed in the processing container 12. The electrostatic chuck ESC sucks the wafer W mounted thereon by an electrostatic force. This electrostatic clamp ESC constitutes a support 26 together with the first support portion 28 and the second support portion 30 in one embodiment. The first support portion 28 has a substantially cylindrical shape and is made of a material having a high thermal conductivity such as copper (Cu). The second support portion 30 is provided on the first support portion 28. The second support portion 30 is also made of a material having a high thermal conductivity such as copper (Cu). In one example, the second support portion 30 has an upper portion having a substantially disc shape and a lower portion having a horizontal cross-sectional area that gradually decreases as it goes downward. An electrostatic clamp ESC is provided on the second support portion 30.

The support 26 is arranged on the refrigerator 16. The refrigerator 16 includes a cooling head 16h and a main body 16m. The cooling head 16h is provided with a cooling surface which is in contact with the first support portion 28. The main body portion 16m is cooled by a Gifford-McMahon cycle (G-M cycle) using a gas such as helium (He) to cool the cooling head 16h. The refrigerator 16 has a cooling capability for cooling the wafer W mounted on the electrostatic chuck ESC to a temperature in a range of -263 ° C to -60 ° C. Temperature in this range The lower limit value refers to a temperature obtained by adding a temperature rise portion (for example, 2 ° C.) in the wafer W to the lower limit cooling temperature of the refrigerator 16 itself. The upper limit of the temperature range (-60 ° C) refers to a temperature lower than the lower limit temperature that can be achieved by using a general refrigerant such as Galden (registered trademark). The temperature at which the adhesive and the vacuum seal are made brittle when cooled to a temperature below the upper limit. The refrigerator 16 is not limited to a refrigerator using a G-M cycle as long as the wafer W can be cooled to a temperature within the above-mentioned temperature range.

As shown in FIG. 2, the cooling treatment device 10 further includes a lift pin 32, a drive device 34, a back gas line 36, and a back gas supply unit 38. In one example, the cooling treatment device 10 includes three lift pins 32, and the lift pins 32 are inserted into holes that penetrate the support 26 in the vertical direction. In addition, the three lift pins 32 are arranged at the center of the support 26 at a substantially equal interval in the circumferential direction. The lifting pins 32 are connected to the driving device 34 via a link 40. The driving device 34 moves the lifting pin 32 up and down. The lift pins 32 rise when the wafer W is carried into the processing container 12 and when the wafer W is carried out from the processing container 12. As a result, the front end of the lift pin 32 is formed in a state protruding above the electrostatic clamp ESC. In this state, the wafer W is transferred from the above-mentioned transfer unit TU2 to the front end of the lift pin 32. Alternatively, the transfer unit TU2 receives the wafer W supported by the front end of the lift pin 32. On the other hand, when the lift pin 32 is lowered, the wafer supported on the front end of the lift pin 32 is placed on the electrostatic clamp ESC. Above.

The gas line 36 extends from the outside of the processing container 12 into the processing container 12, and from the side of the support 26 through the interior of the support 26 to the upper surface of the electrostatic clamp ESC. The gas line 36 is connected to a gas supply unit 38. The gas supply unit 38 supplies a back-surface gas for heat conduction such as He gas to the gas line 36. The gas supplied to the gas line 36 is supplied to the upper surface of the electrostatic chuck ESC, that is, between the second insulating layer and the wafer W described later.

Hereinafter, an electrostatic adsorption device 14 according to an embodiment will be described in detail with reference to FIGS. 2 and 3, 4, 5, and 6. FIG. 3 is a perspective view of an electrostatic adsorption device according to an embodiment. Fig. 4 is a sectional view of an electrostatic jig according to an embodiment. FIG. 5 is an enlarged perspective view showing a partial area of a power supply terminal including an electrostatic clamp according to an embodiment. In FIG. 5, a second insulating layer described later is omitted. FIG. 6 is an enlarged cross-sectional view showing a part of an electrostatic adsorption device according to an embodiment, and shows a part related to electrical connection of a power supply terminal and wiring.

As shown in FIGS. 2 and 3, the electrostatic adsorption device 14 includes an electrostatic clamp ESC, a terminal member 50, a biasing portion 52, a wiring 54, and a power source 56. As shown in FIGS. 3 and 4, the electrostatic clamp ESC includes a base 60, a first insulating layer 62, an adsorption electrode 64, and a second insulating layer 66.

The base 60 is made of a metal such as copper (Cu) or aluminum (Al), and has a slightly disc shape. The base 60 may be made of ceramics or the like other than metal. As shown in FIG. 4, the base 60 has a first surface 601 and a second surface 602 as its surface. 1st The surface 601 refers to the upper surface of the base 60, which is a slightly circular and slightly flat surface. The second surface 602 refers to the surface of the base 60 other than the first surface 601. In one example, the second surface 602 includes a side surface 60s of the base 60 and a bottom surface 60b of the base 60. In addition, the side surface 60s extends in a direction crossing or orthogonal to the first surface 601, and the lower surface 60b faces the first surface 601.

The first insulating layer 62 is provided on the base 60. The first insulating layer 62 is made of an insulator such as aluminum oxide (Al ₂ O ₃ ) or aluminum nitride (AlN). The first insulating layer 62 can be formed by spraying an insulator onto the base 60.

As shown in FIGS. 4 and 5, the first insulating layer 62 includes a first portion 621 and a second portion 622. The first portion 621 extends on the first surface 601 of the base 60. The second portion 622 is continuous to the first portion 621 and extends to a portion of the second surface 602. The second portion 622 of the detailed first insulating layer 62 will be described later.

An adsorption electrode 64 is provided on the first portion 621 of the first insulating layer 62. That is, the adsorption electrode 64 is provided on the first surface 601 via the first portion 621 of the first insulating layer 62. In one example, the electrostatic clamp ESC is a bipolar electrostatic clamp. As shown in FIGS. 4 and 5, the adsorption electrode 64 includes a first electrode 64 a and a second electrode 64 b. The first electrode 64a and the second electrode 64b are spirally extended from the edge portion of the electrostatic clamp ESC toward the center.

The second insulating layer 66 is provided so as to cover the first portion 621 and the adsorption electrode 64 of the first insulating layer 62. The second insulating layer 66 is made of, for example, aluminum oxide (Al ₂ O ₃ ) or aluminum nitride (AlN). As shown in FIGS. 3 and 4, the upper surface of the second insulating layer 66 includes a bottom surface 66b, a protruding portion 66a, and a plurality of protruding portions 66p. The protruding portion 66a and the plurality of protruding portions 66p are formed to bulge upward from the bottom surface 66b. The protruding portion 66a extends in a circumferential direction with respect to the center of the electrostatic clamp ESC. In addition, the plurality of protruding portions 66p have a substantially cylindrical shape, and are arranged so as to be distributed in a region surrounded by the protruding portions 66a. The second insulating layer 66 having such a shape can be formed by spraying an insulator on the first portion 621 of the first insulating layer 62 and the adsorption electrode 64, and then sandblasting the insulator layer. Formed by processing.

When the wafer W is placed on the electrostatic clamp ESC, the upper end of the protruding portion 66a is in contact with the back surface of the edge region of the wafer W, and the upper end of the protruding portion 66p is in contact with the back surface of the wafer W. When the wafer W is placed on the electrostatic clamp ESC so as to be in contact with the upper end of the protruding portion 66a and the upper end of the protruding portion 66p, the bottom surface 66b of the second insulating layer 66 and the back surface of the wafer W are connected. Formed with space. In this space, a back gas is supplied from a gas line 36 shown in FIG. 3. The gas supplied to the space is recovered through a gas line 70 which is provided to penetrate the support 26.

In one embodiment, as shown in FIG. 5 and FIG. 6, the side surface 60s of the base 60 defines the concave portion 60c. The second portion 622 of the first insulating layer 62 extends on the surface of the base 60 defining the recess 60c. The surface of the recessed portion 60c of the zoning base 60 includes a region 60r extending in a direction that is not parallel to the first surface 601, that is, that intersects or is orthogonal to the first surface 601. This area 60r refers to an embodiment from The central side of the electrostatic chuck ESC defines a surface of the recessed portion 60c.

On the second portion 622 of the first insulating layer 62 provided on the region 60r, a conductor pattern 72 electrically connected to the adsorption electrode 64 is extended. The conductor pattern 72 is provided with a power supply terminal 74 on a second portion 622 provided on the area 60r. In one embodiment, the conductor pattern 72 includes a first conductor pattern 72a and a second conductor pattern 72b. The power feeding terminal 74 includes a first power feeding terminal 74a and a second power feeding terminal 74b. The first conductor pattern 72a is electrically connected to the first electrode 64a, and a first power supply terminal 74a is provided on a second portion 622 provided on the area 60r. The second conductor pattern 72b is electrically connected to the second electrode 64b, and a second power supply terminal 74b is provided on the second portion 622 provided on the region 60r. Each of the first power supply terminal 74a and the second power supply terminal 74b is electrically connected to two wires 54 (the wires are connected to the power source 56). From the power source 56, it is possible to apply voltages having different potentials to the first electrode 64a and the second electrode 64b. As a result, electrostatic force is generated in the electrostatic clamp ESC.

Hereinafter, a configuration for electrically connecting the first power supply terminal 74a and the wiring 54 and a configuration for electrically connecting the second power supply terminal 74b and the wiring 54 will be described. The configuration for electrically connecting the first power supply terminal 74a and the wiring 54 and the configuration for electrically connecting the second power supply terminal 74b and the wiring 54 are the same. Therefore, in the following description, the configuration for electrically connecting one power supply terminal and one wiring 54 indicated by the reference symbol "72" will be described.

As shown in FIGS. 3 and 6, the power supply terminal 74 and the wiring 54 The electrical connection is achieved by interposing the terminal member 50 between the power supply terminal 74 and the wiring 54 and making the terminal member 50 physically contact the power supply terminal 74. The terminal member 50 includes a main portion 50m and a front end portion 50d. The main part is 50m and has a slightly cylindrical shape. A screw hole is formed in the main part 50m. The screw hole extends from one end of the main portion 50m toward the long side direction of the main portion 50m. The front end portion 50d is connected to the other end side of the main portion 50m and is continuous to the main portion 50m. The front end portion 50d has a slightly disc shape. A contact portion 50c is provided at the front end portion 50d. In one embodiment, a groove extending in a ring shape is formed in the front end portion 50d. A spring made of a conductor is housed in the groove. This spring is, for example, a coil spring. This spring constitutes the contact portion 50c of one embodiment, and is capable of physically contacting the power supply terminal 74.

The contact portion 50c of the terminal member 50 is configured to bias the power supply terminal 74 by the biasing portion 52. In one embodiment, the urging portion 52 is a screw made of a conductor. The screw 52 is supported by an insulating support member 80. The support member 80 includes a main portion 80m and a protruding portion 80p. The main portion 80m extends along the side surface 60s of the base 60 and the side surface of the second support portion 30. A through hole is formed in the main portion 80m, and a screw hole is formed in the base 60 so as to extend continuously through the through hole in the main portion 80m. When the screw 82 is screwed into the screw hole, the support member 80 is fixed to the base 60.

The protruding portion 80p of the support member 80 extends so as to protrude from the main portion 80m. The protruding portion 80 p of the support member 80 is inserted into the recessed portion 60 c of the base 60. The protrusion 80p is provided with a terminal inserted The hole 80h of the main part 50m of the member 50. A through hole is formed in the main portion 80m of the support member 80 so as to be continuous with the hole 80h. The contact portion 50c is urged to the power supply terminal 74 by the screw 52 being screwed into the screw hole of the main portion 50m of the terminal member 50 through the through hole.

As shown in FIGS. 3 and 6, the wiring 54 is provided along the main portion 80 m of the support member 80. A hole through which the screw 52 passes is formed in the wiring 54, and the wiring 54 is sandwiched between the main portion 80 m and the head of the screw 52. Thereby, the wiring 54 and the screw 52 are conducted, and the screw 52 and the terminal member 50 are conducted. As a result, the wiring 54 and the power supply terminal 74 are electrically connected. In one embodiment, a washer 84 made of a conductor may be provided between the head of the screw 52 and the wiring 54.

As described above, in the electrostatic attraction device 14 of one embodiment, the contact portion 50c of the terminal member 50 is in contact with the power supply terminal 74, and the contact portion 50c of the terminal member 50 is by a screw (a biasing portion) 52. Apply force to the power supply terminal 74. Therefore, in the electrostatic adsorption device 14, it is not necessary to provide an adhesive and a vacuum seal at a portion connected to the power supply terminal 74 and the wiring 54, and the electrical connection between the power supply terminal 74 and the wiring 54 can be ensured. Therefore, the reliability of the connection between the power supply terminal 74 and the wiring 54 can be ensured even in an extremely low temperature environment. In the electrostatic adsorption device 14, a power supply terminal 74 is provided on the second portion 622 of the first insulating layer 62 provided on the second surface 602 of the base 60. Therefore, it is possible to suppress the destruction of the electrostatic clamp ESC due to the pressurization of the urging portion 52.

Furthermore, in one embodiment, the urging portion is provided with a screw 52 As a result, the screw is supported by an insulating support member 80. In this embodiment, the urging portion having a simple structure can be realized.

Further, in one embodiment, the contact portion 50c of the terminal member 50 is configured by a conductive spring. According to this embodiment, the reliability of the physical contact between the contact portion 50c of the terminal member 50 and the power supply terminal 74 can be further improved.

Hereinafter, application examples of the cooling processing device 10 and the processing system 100 provided with the cooling processing device 10 as a process module will be described. In one application example, the processing system 100 is used in the manufacture of a Magnetic Tunnel Junction (MTJ) element that constitutes MRAM (Magnetoresistive Random Access Memory).

FIG. 7 is a cross-sectional view of an example MTJ element. The MTJ element 200 shown in FIG. 7 includes a first magnetic layer 222, a second magnetic layer 226, and a tunnel insulating layer 224. The tunnel insulating layer 224 is provided between the first magnetic layer 222 and the second magnetic layer 226. The first magnetic layer 222 and the second magnetic layer 226 may be magnetic metal layers such as a Co-Fe-B layer. The tunnel insulating layer 224 may be a metal oxide layer such as a magnesium oxide layer, an aluminum oxide layer, or a titanium oxide layer.

The MTJ element 200 may further include a lower electrode layer 212, a base layer 214, an antiferromagnetic layer 216, a magnetic layer 218, a magnetic layer 220, and a cover layer 228. The base layer 214 is disposed on the lower electrode layer 212. The antiferromagnetic layer 216 is disposed on the base layer 214. The magnetic layer 218 is disposed on the antiferromagnetic layer 216. The magnetic layer 220 is disposed on the magnetic layer 218. The first magnetic layer 222 is provided on the magnetic layer 220 on. The cover layer 228 is provided on the second magnetic layer 226. In one example, the lower electrode layer 212 is a Ru layer, the base layer 214 is a Ta layer, the antiferromagnetic layer 216 is a Mn-Pt layer, the magnetic layer 218 is a Co-Fe layer, the magnetic layer 220 is a Ru layer, and the cover layer 228 is Ta layer.

The cooling processing device 10 can be used, for example, before or during the formation of the second magnetic layer 226 of the MTJ element 200. Before or during the formation of the second magnetic layer 226 as the CoFeB layer, when the wafer W on which the MTJ element 200 is formed is cooled by the cooling processing device 10, the second magnetic layer 226 having excellent film quality can be formed. . When the cooling treatment device 10 is used for film formation, the cooling treatment device 10 is configured as a physical vapor deposition device. In this case, the cooling treatment device 10 is a device further including a target, a target holder, an electrode for plasma generation, a power source for supplying power to the electrode, and the like.

Although various embodiments have been described above, they are not limited to the embodiments described above, and various modifications can be made. For example, the power supply terminal 74 may be formed on the other surface of the base 60 opposite to the first surface 601 of the base 60. In addition, although the electrostatic clamp ESC of the above-mentioned embodiment is a bipolar electrostatic clamp, in a modified form, it may be a unipolar electrostatic clamp. In the above-mentioned application examples, although the cooling processing device 10 is mainly used before or during the formation of the second magnetic layer 226, the cooling processing device 10 can also be used in other layers of the MTJ element 200. Before or during film formation, it can also be used in processes different from those of MTJ element manufacturing.

Claims (8)

An electrostatic adsorption device is characterized by comprising: an electrostatic clamp for adsorbing an object to be processed, and a base including a first surface and a second surface different from the first surface; a first insulating layer, It is provided on the base, and includes a first portion extending on the first surface and a second portion extending on at least a portion of the second surface; an adsorption electrode is provided on the first portion; 2 an insulating layer provided on the first part and the adsorption electrode; and a conductor pattern provided on the first insulating layer and electrically connected to the adsorption electrode, and including a power supply provided on the second part A terminal; a terminal member having a contact portion abutting the power supply terminal; means for applying force to the power supply terminal by the contact portion of the terminal member; wiring and electrically connecting the terminal member; and a power source and electrical connection In the aforementioned wiring. For example, in the electrostatic adsorption device of the scope of application for a patent, the means for applying force mentioned above is a screw, and further includes an insulating support member for supporting the screw. For example, the electrostatic adsorption device according to item 1 or 2 of the patent application scope, wherein the aforementioned contact portion includes a conductive spring. For example, the electrostatic adsorption device according to item 1 or 2 of the patent application range, wherein the wiring is electrically connected to the terminal member through the means for applying force. For example, the electrostatic adsorption device according to item 1 or 2 of the patent application scope, wherein the second surface includes an area extending in a direction that is not parallel to the first surface, and the power supply terminal is provided through the second portion. On the region of the second surface. For example, the electrostatic adsorption device according to the first or second patent application range, wherein the object to be processed is adsorbed at a temperature in the range of -263 ° C to -60 ° C. An electrostatic clamp is used for adsorbing an object to be processed. The electrostatic clamp is characterized in that it comprises: a base including a first surface and a second surface different from the first surface; and a first insulating layer provided on The base includes a first portion extending on the first surface and a second portion extending over at least a portion of the second surface; an adsorption electrode is provided on the first portion; and a second insulation A layer provided on the first part and the adsorption electrode; and a conductor pattern provided on the first insulation layer and electrically connected to the adsorption electrode, and including a power supply terminal provided on the second part. A cooling processing device, comprising: a processing container; an electrostatic adsorption device, such as an electrostatic adsorption device according to any one of claims 1 to 6, and the aforementioned electrostatic clamp is provided in the aforementioned processing container; and A freezer for cooling the electrostatic clamp.