TWI647886B - Anisotropic conductive film, connection structure, connection structure manufacturing method and connection method - Google Patents
Anisotropic conductive film, connection structure, connection structure manufacturing method and connection method Download PDFInfo
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- TWI647886B TWI647886B TW107115274A TW107115274A TWI647886B TW I647886 B TWI647886 B TW I647886B TW 107115274 A TW107115274 A TW 107115274A TW 107115274 A TW107115274 A TW 107115274A TW I647886 B TWI647886 B TW I647886B
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- Prior art keywords
- terminal
- flexible display
- electronic component
- anisotropic conductive
- conductive particles
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/70—Coupling devices
- H01R12/7076—Coupling devices for connection between PCB and component, e.g. display
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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Abstract
本發明之連接結構體之製造方法係於設置於可撓性顯示器(Flexible Display)之端子與電子零件之端子之間插入異向性導電連接層,而將上述可撓性顯示器與上述電子零件連接及導通,其具有下述步驟:搭載步驟:係以隔著上述異向性導電連接層使上述電子零件之端子與設置於上述可撓性顯示器之端子對向之方式將上述電子零件搭載於上述可撓性顯示器上;及連接步驟:係對上述可撓性顯示器加壓上述電子零件,利用上述異向性導電連接層將設置於上述可撓性顯示器之端子與上述電子零件之端子連接並經由上述異向性導電連接層中之導電性粒子將該等端子導通。上述導電性粒子之30%壓縮變形時之壓縮硬度為150~400Kgf/mm2。 The method for manufacturing the connection structure of the present invention is to insert an anisotropic conductive connection layer between a terminal of a flexible display and a terminal of the electronic component, and connect the flexible display to the electronic component. And conducting, the step of: mounting the electronic component on the terminal by aligning a terminal of the electronic component with a terminal provided on the flexible display via the anisotropic conductive connection layer And a connecting step of: pressing the electronic component on the flexible display, and connecting the terminal provided on the flexible display to the terminal of the electronic component via the anisotropic conductive connecting layer; The conductive particles in the anisotropic conductive connection layer conduct the terminals. The compressive hardness at the time of 30% compression deformation of the above conductive particles is 150 to 400 Kgf/mm 2 .
Description
本發明係關於一種對可撓性顯示器(Flexible Display)構裝例如可撓性印刷電路板或半導體元件等電子零件時所使用之異向性導電連接材料、使用異向性導電連接層將可撓性顯示器與電子零件連接之連接結構體、使用異向性導電連接層將可撓性顯示器與電子零件連接之連接方法及利用該連接方法之連接結構體之製造方法。 The present invention relates to an anisotropic conductive connecting material used for constructing an electronic component such as a flexible printed circuit board or a semiconductor component for a flexible display, and using an anisotropic conductive connecting layer to be flexible A connection structure in which a physical display is connected to an electronic component, a connection method in which a flexible display is connected to an electronic component using an anisotropic conductive connection layer, and a method of manufacturing a connection structure using the connection method.
作為將半導體元件等電子零件構裝於基板之技術,例如廣泛使用將電子零件以所謂之面朝下狀態構裝於基板上之倒裝晶片構裝法。於倒裝晶片構裝法中,為了提高連接可靠性等,於電子零件之端子與設置於基板之端子之間插入異向性導電膜,進行利用異向性導電膜之電性及機械連接。異向性導電膜係於含有樹脂等之接著劑中分散有導電性粒子者。導電性粒子例如為對樹脂粒子實施鍍鎳、鍍金而成之粒子等。 As a technique for mounting an electronic component such as a semiconductor element on a substrate, for example, a flip chip mounting method in which an electronic component is mounted on a substrate in a so-called face down state is widely used. In the flip chip mounting method, in order to improve the connection reliability and the like, an anisotropic conductive film is inserted between the terminal of the electronic component and the terminal provided on the substrate, and electrical and mechanical connection by the anisotropic conductive film is performed. The anisotropic conductive film is one in which conductive particles are dispersed in an adhesive containing a resin or the like. The conductive particles are, for example, particles obtained by subjecting the resin particles to nickel plating or gold plating.
於此種構裝方法中,例如於專利文獻1中,將電子零件之端子或配線基板之端子表面設為平坦面,將導電性粒子均勻地壓碎,藉此使電子零件之端子與設置於配線基板之端子之電性連接良好。 In the above-described method, for example, in Patent Document 1, the terminal surface of the electronic component or the terminal surface of the wiring substrate is a flat surface, and the conductive particles are uniformly crushed, whereby the terminals of the electronic component are placed on the terminal. The electrical connection of the terminals of the wiring substrate is good.
又,該構裝方法亦使用於液晶顯示器或可撓性顯示器。液晶顯示器係使用楊氏模數高達72GPa而不易變形之玻璃基材,易因來自外部之擠壓等而破損者。另一方面,將柔軟之塑膠用於基材而成之可撓性顯示 器非常薄,具有可撓性,故而可彎曲,不易破損,可用於電子紙或上卷式螢幕(roll up screen)。 Moreover, the mounting method is also used for a liquid crystal display or a flexible display. The liquid crystal display uses a glass substrate having a Young's modulus of up to 72 GPa and is not easily deformed, and is easily damaged by external extrusion or the like. On the other hand, a flexible display made of a soft plastic for a substrate is very thin and flexible, so that it can be bent and is not easily broken, and can be used for an electronic paper or a roll up screen.
於可撓性顯示器中,顯示區域之透明電極(ITO等)延伸並於由塑膠等構成之基材之端部設置有與IC晶片及可撓性印刷電路板等電子零件電性連接之連接用端子。於可撓性顯示器中,該連接用端子設置於顯示區域之正下方或附近,為了因應高密度構裝等,而進行有端子之微細化、窄間距化。於如此進行微細化、窄間距化之端子與電子零件或可撓性印刷電路板等之端子之電性連接中,如上所述使用異向性導電膜(例如參照專利文獻2)。 In a flexible display, a transparent electrode (ITO or the like) in a display region is extended and connected to an electronic component such as an IC chip or a flexible printed circuit board at an end portion of a substrate made of plastic or the like. Terminal. In the flexible display, the terminal for connection is provided immediately below or in the vicinity of the display region, and the terminal is made finer and narrower in order to perform high-density mounting or the like. In the electrical connection of the terminal for miniaturization and narrow pitch, and the terminal of an electronic component or a flexible printed circuit board, an anisotropic conductive film is used as described above (for example, see Patent Document 2).
於可撓性顯示器中,由於使用聚醯亞胺或聚對酞酸乙二酯等柔軟之基材,故而於使用與電子零件之連接中使用之普通異向性導電膜,且藉由加壓連接之情形時,有產生以導電性粒子為起點使端子產生裂紋,使基材亦產生裂紋或破裂等不良情況之情形。例如,於將IC晶片等電子零件直接連接於可撓性顯示器之基材上之情形時,與以配線寬連接之可撓性印刷電路板之情形不同,IC晶片等之成為端子之凸塊分散存在,連接時施加之壓力亦集中於一點進行施加,故而容易產生裂紋。 In a flexible display, since a flexible substrate such as polyimide or polyethylene terephthalate is used, a general anisotropic conductive film used in connection with an electronic component is used, and pressurized In the case of connection, there is a case where cracks occur in the terminal starting from the conductive particles, and the substrate is also cracked or cracked. For example, when an electronic component such as an IC chip is directly connected to a substrate of a flexible display, unlike a flexible printed circuit board having a wide wiring, an IC chip or the like becomes a bump of a terminal. In the presence of pressure, the pressure applied during the connection is also concentrated at one point, so that cracks are likely to occur.
於可撓性顯示器中,於顯示部之正下方或附近存在電子零件之構裝區域,故而與如上述專利文獻1之僅於設置於配線基板之端子構裝電子零件之情形相比,為了不於狹窄之構裝區域產生裂紋,而必需特別抑制裂紋產生。於可撓性顯示器中,若於連接電子零件時端子產生裂紋,或可撓性之基材破裂,則有顯示部亦會產生裂紋或破裂等之情形,故而對顯示部之影響較大,而要求抑制因電子零件連接所致之裂紋之產生或基材之 破裂。 In the flexible display, the mounting area of the electronic component is present immediately below or in the vicinity of the display portion. Therefore, compared with the case where the electronic component is mounted on the terminal of the wiring substrate as in the above-described Patent Document 1, Cracks are generated in the narrow structure area, and crack generation must be particularly suppressed. In the flexible display, if the terminal is cracked when the electronic component is connected, or the flexible substrate is broken, cracks or cracks may occur in the display portion, and thus the display portion is greatly affected. It is required to suppress the occurrence of cracks due to the connection of electronic parts or the cracking of the substrate.
專利文獻1:日本特開2009-111043號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2009-111043
專利文獻2:日本特開2009-242508號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2009-242508
本發明係鑒於此種先前之狀況而提出者,其目的在於提供一種異向性導電連接材料,其於利用異向性導電連接材料將設置於可撓性顯示器之端子與電子零件之端子機械及電性地連接時,可抑制設置於可撓性顯示器之端子或可撓性顯示器本身產生裂紋或產生破裂;一種使用異向性導電連接層將可撓性顯示器與電子零件連接之連接結構體;一種使用異向性導電連接層將可撓性顯示器與電子零件連接之連接方法及利用該連接方法之連接結構體之製造方法。 The present invention has been made in view of such prior circumstances, and an object thereof is to provide an anisotropic conductive connecting material which is provided with a terminal for a flexible display and a terminal of an electronic component by using an anisotropic conductive connecting material. When electrically connected, the terminal disposed on the flexible display or the flexible display itself may be prevented from cracking or cracking; a connecting structure connecting the flexible display and the electronic component using the anisotropic conductive connecting layer; A method of connecting a flexible display to an electronic component using an anisotropic conductive connection layer, and a method of manufacturing the bonded structure using the connection method.
達成上述目的之本發明之連接結構體的製造方法係於設置於可撓性顯示器之端子與電子零件之端子間插入異向性導電連接層,而將可撓性顯示器與電子零件連接及導通,其特徵在於具有下述步驟:搭載步驟:係以隔著異向性導電連接層使電子零件之端子與設置於可撓性顯示器之端子對向的方式將電子零件搭載於可撓性顯示器上;及連接步驟:係對可撓性顯示器加壓電子零件,利用異向性導電連接層將設置於可撓性顯示器之端子與電子零件之端子連接並經由異向性導電連接層中之導電性粒子將該等端子導通;導電性粒子之30%壓縮變形時之壓縮硬度為150~400Kgf/mm2。 The method for manufacturing a connection structure according to the present invention which achieves the above object is to insert an anisotropic conductive connection layer between a terminal of a flexible display and a terminal of an electronic component, and connect and electrically connect the flexible display to the electronic component. The method includes the steps of: mounting the electronic component on the flexible display such that the terminal of the electronic component is opposed to the terminal provided on the flexible display via the anisotropic conductive connection layer; And connecting step: pressing the electronic component on the flexible display, and connecting the terminal disposed on the flexible display to the terminal of the electronic component through the anisotropic conductive connecting layer and conducting the conductive particle in the anisotropic conductive connecting layer The terminals are turned on; the compression hardness at 30% compression deformation of the conductive particles is 150 to 400 Kgf/mm 2 .
達成上述目的之本發明之連接方法係藉由異向性導電連接 層將設置於可撓性顯示器之端子與電子零件之端子連接,其特徵在於具有下述步驟:搭載步驟:係以隔著異向性導電連接層使電子零件之端子與設置於可撓性顯示器之端子對向的方式將電子零件搭載於可撓性顯示器上;及連接步驟:係對可撓性顯示器加壓電子零件,利用異向性導電連接層將設置於可撓性顯示器之端子與電子零件之端子連接並經由異向性導電連接層中之導電性粒子將該等端子導通;導電性粒子之30%壓縮變形時之壓縮硬度為150~400Kgf/mm2。 The connection method of the present invention for achieving the above object is to connect a terminal provided on a flexible display to a terminal of an electronic component by an anisotropic conductive connection layer, and has the following steps: a mounting step: interlacing The conductive conductive connection layer mounts the electronic component on the flexible display such that the terminal of the electronic component faces the terminal provided on the flexible display; and the connecting step: pressurizing the electronic component to the flexible display, and utilizing The anisotropic conductive connection layer connects the terminal disposed on the flexible display to the terminal of the electronic component and conducts the terminals through the conductive particles in the anisotropic conductive connection layer; when the conductive particles are 30% compressed and deformed The compression hardness is 150 to 400 Kgf/mm 2 .
達成上述目的之本發明之異向性導電連接材料係將設置於可撓性顯示器之端子與電子零件之端子連接,於接著劑中含有30%壓縮變形時之壓縮硬度為150~400Kgf/mm2之導電性粒子。 The anisotropic conductive connecting material of the present invention which achieves the above object connects the terminal provided on the flexible display to the terminal of the electronic component, and has a compression hardness of 150 to 400 Kgf/mm 2 when the adhesive contains 30% compression deformation. Conductive particles.
達成上述目的之本發明之連接結構體係在設置於可撓性顯示器之端子與電子零件之端子間插入異向性導電連接層,而將可撓性顯示器與電子零件連接及導通,異向性導電性層中之導電性粒子的30%壓縮變形時之壓縮硬度為150~400Kgf/mm2。 The connection structure system of the present invention for achieving the above object inserts an anisotropic conductive connection layer between a terminal of the flexible display and a terminal of the electronic component, and connects and electrically connects the flexible display and the electronic component, and anisotropically conductive The compressive hardness at 30% compression deformation of the conductive particles in the layer is 150 to 400 Kgf/mm 2 .
根據本發明,藉由將異向性導電連接材料之絕緣性接著劑中所含有之導電性粒子之30%壓縮變形時的壓縮硬度設為150~400Kgf/mm2,而即便於將可撓性顯示器與電子零件連接時進行加壓,導電性粒子變形,使導電性粒子與可撓性顯示器之端子之接觸面積擴大,亦可防止可撓性顯示器之端子產生裂紋,可抑制可撓性顯示器本身亦產生裂紋,或破裂。 According to the present invention, the compression hardness at the time of 30% compression deformation of the conductive particles contained in the insulating adhesive for the anisotropic conductive connecting material is 150 to 400 Kgf/mm 2 , and even the flexibility is obtained. When the display is connected to the electronic component, the conductive particles are deformed, and the contact area between the conductive particles and the terminals of the flexible display is enlarged, and cracks in the terminals of the flexible display can be prevented, and the flexible display itself can be suppressed. Cracks are also generated, or cracks.
1‧‧‧膜積層體 1‧‧‧membrane layer
2‧‧‧剝離膜 2‧‧‧Release film
3‧‧‧異向性導電膜 3‧‧‧ Anisotropic conductive film
4‧‧‧絕緣性接著劑 4‧‧‧Insulating adhesive
5‧‧‧導電性粒子 5‧‧‧Electrical particles
10、20‧‧‧連接結構體 10, 20‧‧‧ Connection structure
10a、20a‧‧‧顯示部 10a, 20a‧‧‧ Display Department
10b、20b‧‧‧構裝部 10b, 20b‧‧‧ Construction Department
11‧‧‧可撓性顯示器 11‧‧‧Flexible display
12‧‧‧IC晶片 12‧‧‧ IC chip
12a、13a、14a‧‧‧端子 12a, 13a, 14a‧‧‧ terminals
13‧‧‧可撓性印刷電路板 13‧‧‧Flexible printed circuit boards
14‧‧‧可撓性膜 14‧‧‧Flexible film
15‧‧‧顯示媒體層 15‧‧‧Display media layer
16‧‧‧密封部 16‧‧‧ Sealing Department
圖1係應用本發明之膜積層體之剖面圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing a film laminate to which the present invention is applied.
圖2係表示由導電性粒子之30%壓縮變形時之壓縮硬度算出的壓縮移位-荷重之關係圖。 Fig. 2 is a graph showing the relationship between the compression shift and the load calculated from the compression hardness at the time of 30% compression deformation of the conductive particles.
圖3係表示利用異向性導電膜將可撓性顯示器與電子零件連接之連接結構體的圖,(A)係連接結構體之俯視圖,(B)係連接結構體之剖面圖。 3 is a view showing a connection structure in which a flexible display and an electronic component are connected by an anisotropic conductive film, (A) is a plan view of the connection structure, and (B) is a cross-sectional view of the connection structure.
圖4係表示可撓性膜之端子、與電子零件之端子之連接部分的剖面圖。 Fig. 4 is a cross-sectional view showing a connecting portion of a terminal of a flexible film and a terminal of an electronic component.
圖5係利用異向性導電膜將2個IC晶片及可撓性印刷電路板連接於可撓性顯示器而成之連接結構體的俯視圖。 Fig. 5 is a plan view showing a connection structure in which two IC chips and a flexible printed circuit board are connected to a flexible display by an anisotropic conductive film.
以下,參照圖式對應用本發明之異向性導電連接材料、連接結構體、連接結構體之製造方法及連接方法進行詳細說明。再者,本發明只要無特別限定,則並不限定於以下之詳細說明。本發明之實施形態之說明係按照以下順序進行。 Hereinafter, the anisotropic conductive connecting material, the connecting structure, the method of manufacturing the connecting structure, and the connecting method to which the present invention is applied will be described in detail with reference to the drawings. In addition, the present invention is not limited to the following detailed description unless otherwise specified. The description of the embodiments of the present invention is carried out in the following order.
1.異向性導電連接材料 1. Anisotropic conductive connecting material
2.連接結構體、連接結構體之連接方法、連接方法 2. Connection structure, connection method of connection structure, connection method
<異向性導電連接材料> <Anisotropic conductive connecting material>
異向性導電連接材料係插入於設置於可撓性顯示器之端子與電子零件之端子間,而將可撓性顯示器與電子零件連接並導通者。作為此種異向性導電連接材料,可列舉膜狀之異向性導電膜或漿料狀之異向性導電連接漿料。於本申請案中,將異向性導電膜或異向性導電連接漿料定義為「異向性導電連接材料」。以下,列舉異向性導電膜為例進行說明。 The anisotropic conductive connecting material is inserted between the terminal of the flexible display and the terminal of the electronic component, and the flexible display is connected to the electronic component and turned on. Examples of such an anisotropic conductive connecting material include a film-shaped anisotropic conductive film or a slurry-like anisotropic conductive connecting paste. In the present application, an anisotropic conductive film or an anisotropic conductive connecting paste is defined as an "anisotropic conductive connecting material". Hereinafter, an anisotropic conductive film will be described as an example.
如圖1所示,膜積層體1通常係於成為剝離基材之剝離膜2上積層成為異向性導電連接層之異向性導電膜3而成者。 As shown in FIG. 1, the film laminate 1 is usually formed by laminating an anisotropic conductive film 3 which is an anisotropic conductive connection layer on a release film 2 which is a release substrate.
剝離膜2例如係對PET(Poly Ethylene Terephthalate,聚對酞酸乙二酯)、OPP(Oriented Polypropylene,定向聚丙烯)、PMP(Poly-4-methylpentene-1,聚-4-甲基戊烯-1)、PTFE(Polytetrafluoroethylene,聚四氟乙烯)等塗佈矽酮等剝離劑而成者。 The release film 2 is, for example, a pair of PET (Poly Ethylene Terephthalate, polyethylene terephthalate), OPP (Oriented Polypropylene), PMP (Poly-4-methylpentene-1, poly-4-methylpentene- 1) A PTFE (Polytetrafluoroethylene) or the like is coated with a release agent such as an anthrone.
異向性導電膜3係於含有膜形成樹脂、熱硬化性樹脂及硬化劑等之絕緣性接著劑(黏合劑)4中分散有導電性粒子5者。該異向性導電膜3於剝離膜2上形成為膜狀。 The anisotropic conductive film 3 is one in which the conductive particles 5 are dispersed in an insulating adhesive (adhesive) 4 containing a film-forming resin, a thermosetting resin, and a curing agent. The anisotropic conductive film 3 is formed into a film shape on the release film 2.
作為膜形成樹脂,較佳為平均分子量為10000~80000左右之樹脂。作為膜形成樹脂,尤其可列舉環氧樹脂、變形環氧樹脂、胺酯樹脂(urethane resin)、苯氧樹脂等各種樹脂。其中,就膜形成狀態、連接可靠性等觀點而言,較佳為苯氧樹脂。膜形成樹脂之含量若過少則無法形成膜,若過多則不易進行用以電性連接之樹脂之排除,故而相對於100質量份之絕緣性接著劑4為20~80質量份,較佳為40~70質量份。 The film-forming resin is preferably a resin having an average molecular weight of about 10,000 to 80,000. Examples of the film-forming resin include various resins such as an epoxy resin, a deformed epoxy resin, an urethane resin, and a phenoxy resin. Among them, a phenoxy resin is preferred from the viewpoints of a film formation state, connection reliability, and the like. When the content of the film-forming resin is too small, the film cannot be formed, and if it is too large, the resin for electrical connection is not easily removed. Therefore, it is 20 to 80 parts by mass, preferably 40, per 100 parts by mass of the insulating adhesive 4. ~70 parts by mass.
作為硬化成分,只要於常溫下具有流動性,則並無特別限定,可列舉市售之環氧樹脂、丙烯酸樹脂。 The hardening component is not particularly limited as long as it has fluidity at normal temperature, and examples thereof include commercially available epoxy resins and acrylic resins.
作為環氧樹脂,並無特別限制,可根據目的適當選擇,例如可列舉:萘型環氧樹脂、聯苯型環氧樹脂、苯酚酚醛清漆型環氧樹脂、雙酚型環氧樹脂、茋型環氧樹脂、三苯酚甲烷型環氧樹脂、苯酚芳烷基型環氧樹脂、萘酚型環氧樹脂、二環戊二烯型環氧樹脂、三苯甲烷型環氧樹脂等。其等可單獨使用,亦可組合2種以上使用。 The epoxy resin is not particularly limited and may be appropriately selected according to the purpose, and examples thereof include a naphthalene type epoxy resin, a biphenyl type epoxy resin, a phenol novolak type epoxy resin, a bisphenol type epoxy resin, and a quinoid type. Epoxy resin, trisphenol methane type epoxy resin, phenol aralkyl type epoxy resin, naphthol type epoxy resin, dicyclopentadiene type epoxy resin, triphenylmethane type epoxy resin, and the like. These may be used alone or in combination of two or more.
作為丙烯酸樹脂,並無特別限制,可根據目的適當選擇,例如可列舉丙烯酸化合物、液狀丙烯酸酯等。具體而言,可列舉:丙烯酸甲 酯、丙烯酸乙酯、丙烯酸異丙酯、丙烯酸異丁酯、環氧丙烯酸酯、乙二醇二丙烯酸酯、二乙二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、二羥甲基三環癸烷丙烯酸酯、1,4-丁二醇四丙烯酸酯、2-羥基-1,3-二丙烯醯氧基丙烷、2,2-雙[4-(丙烯醯氧基甲氧基)苯基]丙烷、2,2-雙[4-(丙烯醯氧基乙氧基)苯基]丙烷、丙烯酸二環戊烯酯、丙烯酸三環癸酯、異氰尿酸三(丙烯醯氧基乙酯)、丙烯酸胺酯、環氧丙烯酸酯等。其等可單獨使用,亦可組合2種以上使用。 The acrylic resin is not particularly limited and may be appropriately selected according to the purpose, and examples thereof include an acrylic compound and a liquid acrylate. Specific examples thereof include methyl acrylate, ethyl acrylate, isopropyl acrylate, isobutyl acrylate, epoxy acrylate, ethylene glycol diacrylate, diethylene glycol diacrylate, and trimethylolpropane. Triacrylate, dimethylol tricyclodecane acrylate, 1,4-butanediol tetraacrylate, 2-hydroxy-1,3-dipropenyloxypropane, 2,2-bis[4-( Propylene methoxymethoxy)phenyl]propane, 2,2-bis[4-(acryloxyethoxy)phenyl]propane, dicyclopentenyl acrylate, tricyclodecyl acrylate, isocyanide Uric acid tris(propylene methoxyethyl ester), urethane acrylate, epoxy acrylate, and the like. These may be used alone or in combination of two or more.
作為熱硬化性樹脂,較佳為使用環氧樹脂或丙烯酸樹脂。 As the thermosetting resin, an epoxy resin or an acrylic resin is preferably used.
作為潛伏性硬化劑,可列舉加熱硬化型、UV硬化型等各種硬化劑。潛伏性硬化劑通常不會反應,藉由熱、光、加壓等根據用途而選擇之各種觸發源而活性化,而開始反應。熱活性型潛伏性硬化劑之活性化方法存在:於利用加熱之解離反應等中生成活性種(陽離子或陰離子)之方法;於室溫左右於環氧樹脂中穩定地分散,於高溫下與環氧樹脂相容、熔解,而開始硬化反應之方法;使分子篩封入型之硬化劑於高溫下熔出而開始硬化反應之方法;利用微膠囊之熔出、硬化方法等。熱活性型潛伏性硬化劑有咪唑系、醯肼系、三氟化硼-胺錯合物、鋶鹽、胺醯亞胺、胺鹽、雙氰胺等、或其等之改質物,其等可為單獨,亦可為2種以上之混合體。其中,較佳為微膠囊型咪唑系潛伏性硬化劑。 Examples of the latent curing agent include various curing agents such as a heat curing type and a UV curing type. The latent curing agent usually does not react, and is activated by various trigger sources selected according to the use such as heat, light, pressure, and the like, and the reaction is started. A method for activating a heat-active latent curing agent: a method of forming an active species (cation or anion) in a dissociation reaction by heating or the like; stably dispersing in an epoxy resin at room temperature, at a high temperature and a ring A method in which an oxygen resin is compatible and melted, and a hardening reaction is started; a method in which a molecular sieve-sealed hardener is melted at a high temperature to start a hardening reaction; a microcapsule melting and hardening method is used. The thermally active latent curing agent is an imidazole, an anthraquinone, a boron trifluoride-amine complex, an onium salt, an amine imine, an amine salt, a dicyandiamide, or the like, or the like, and the like They may be used singly or in combination of two or more kinds. Among them, a microcapsule type imidazole-based latent curing agent is preferred.
再者,異向性導電膜3中亦可含有矽烷偶合劑。作為矽烷偶合劑,並無特別限定,例如可列舉環氧系、胺基系、巰基-硫基系、脲基系等。藉由添加矽烷偶合劑,可提昇有機材料與無機材料之界面之連接性。 Further, the anisotropic conductive film 3 may further contain a decane coupling agent. The decane coupling agent is not particularly limited, and examples thereof include an epoxy group, an amine group, a thiol group, a thio group, and a urea group. By adding a decane coupling agent, the interface between the organic material and the inorganic material can be improved.
導電性粒子5之30%壓縮變形時之壓縮硬度(K值)為150 ~400Kgf/mm2(1.50~4.00GPa),較佳為150~350Kgf/mm2(1.50~3.50GPa)。該導電性粒子5之硬度之指標係對1個粒子施加負荷而使粒子變形時,自為了對無負荷狀態之粒徑進行30%壓縮變形所需之負荷而算出之K值。所謂30%壓縮變形係指於將導電性粒子5向一方向壓縮時,以使導電性粒子之粒徑2R(mm)較原本之粒徑短30%之方式變形之狀態,即導電性粒子之粒徑2R成為原本之粒徑之70%之變形狀態。K值越小則粒子越軟。 The compression hardness (K value) at 30% compression deformation of the conductive particles 5 is 150 to 400 Kgf/mm 2 (1.50 to 4.00 GPa), preferably 150 to 350 Kgf/mm 2 (1.50 to 3.50 GPa). The index of the hardness of the conductive particles 5 is a K value calculated from a load required to perform 30% compression deformation on the particle size in an unloaded state when a load is applied to one particle to deform the particle. The 30% compression deformation refers to a state in which the conductive particles 5 are deformed in one direction, and the particle diameter 2R (mm) of the conductive particles is deformed by 30% shorter than the original particle diameter, that is, the conductive particles. The particle size 2R is a deformed state of 70% of the original particle diameter. The smaller the K value, the softer the particles.
該導電性粒子5之30%壓縮變形時之壓縮硬度(K值)藉由下述式(1)而算出。 The compression hardness (K value) at the time of 30% compression deformation of the conductive particles 5 was calculated by the following formula (1).
此處,式(1)中,F及S分別為導電性粒子之30%之壓縮變形時之荷重值(Kgf)及壓縮移位(mm),R為半導體粒子之半徑(mm) Here, in the formula (1), F and S are respectively a load value (Kgf) and a compression shift (mm) at 30% of compression deformation of the conductive particles, and R is a radius of the semiconductor particles (mm).
K值例如係藉由以下之測定方法而測定。具體而言,首先於室溫下在具有平滑表面之鋼板上散佈導電性粒子。其次,自散佈之導電性粒子中選擇1個導電性粒子。繼而,藉由將微小壓縮試驗機(例如PCT-200型:島津製作所股份有限公司製造)所具備之金剛石製之直徑50μm之圓柱之平滑端面抵壓於所選擇之1個導電性粒子,而壓縮該導電性粒子。此時,壓縮荷重作為電磁力被進行電性檢測,壓縮移位作為利用作動變壓器之移位被進行電性檢測。此處,所謂「壓縮移位」係指自變形前之導電性粒子之粒徑減去變形後之導電性粒子之短徑的長度而獲得之值(mm)。其後,選擇鋼板上之其他導電性粒子,對所選擇之導電性粒子亦測定壓縮 荷重及壓縮移位。例如對10個導電性粒子進行相對於不同之壓縮荷重之壓縮變形之測定。 The K value is measured, for example, by the following measurement method. Specifically, first, conductive particles are spread on a steel sheet having a smooth surface at room temperature. Next, one conductive particle is selected from the dispersed conductive particles. Then, a smooth end surface of a 50 μm diameter cylinder made of diamond made of a micro compression tester (for example, PCT-200 type: manufactured by Shimadzu Corporation) is pressed against the selected one of the conductive particles to be compressed. The conductive particles. At this time, the compression load is electrically detected as an electromagnetic force, and the compression displacement is electrically detected as a displacement by the actuation transformer. Here, the "compression shift" refers to a value (mm) obtained by subtracting the length of the short diameter of the conductive particles after deformation from the particle diameter of the conductive particles before deformation. Thereafter, other conductive particles on the steel sheet are selected, and the compression load and the compression shift are also measured for the selected conductive particles. For example, the measurement of compressive deformation of 10 conductive particles with respect to different compression loads is performed.
壓縮移位-荷重之關係係如圖2所示。根據該圖2所示之關係,自導電性粒子之30%壓縮時之壓縮移位S(mm)算出荷重值F(kgf)。繼而,藉由荷重值F(kgf)及壓縮移位S(mm),使用式(1)算出30%壓縮時之壓縮硬度K值。 The relationship between compression shift and load is shown in Figure 2. According to the relationship shown in Fig. 2, the load value F (kgf) is calculated from the compression shift S (mm) at 30% compression of the conductive particles. Then, the compression hardness K value at the time of 30% compression is calculated by the formula (1) by the load value F (kgf) and the compression shift S (mm).
藉由導電性粒子5之30%壓縮變形時之壓縮硬度為150~400Kgf/mm2,若對大致球狀之粒子進行加壓則其會因荷重而變形,藉此,於如下所述般在設置於可撓性顯示器之端子與電子零件之端子之間插入異向性導電膜3而將端子彼此連接及導通時,即便經壓縮亦以稍微壓破之方式變形。因此,導電性粒子5相對於可撓性顯示器之端子而言並非以點接觸而以面接觸,傳遞至端子之每單位面積之壓力減輕,可使施加於端子之局部壓力分散,而可防止端子產生裂紋,或可撓性顯示器本身破裂。若導電性粒子5之K值較小,過於柔軟,則連接部之導通電阻值不穩定,故而設為150Kgf/mm2以上。藉由設為150~400Kgf/mm2,可防止端子之裂紋產生及對可撓性顯示器本身之裂紋產生或破裂,並且亦可降低導通電阻值。 The compression hardness at the time of 30% compression deformation of the conductive particles 5 is 150 to 400 Kgf/mm 2 , and if the substantially spherical particles are pressed, they are deformed by the load, thereby being as follows When the anisotropic conductive film 3 is inserted between the terminal of the flexible display and the terminal of the electronic component, and the terminals are connected to each other and turned on, they are deformed by being slightly crushed even after being compressed. Therefore, the conductive particles 5 are not in surface contact with respect to the terminals of the flexible display, and the pressure per unit area transmitted to the terminals is reduced, and the partial pressure applied to the terminals can be dispersed, and the terminals can be prevented. Cracks are generated, or the flexible display itself is broken. When the K value of the conductive particles 5 is too small and too soft, the on-resistance value of the connection portion is unstable, so that it is 150 Kgf/mm 2 or more. By setting it as 150 to 400 Kgf/mm 2 , cracking of the terminal and cracking or cracking of the flexible display itself can be prevented, and the on-resistance value can also be lowered.
作為導電性粒子5,可使用鎳、鐵、銅、鋁、錫、鉛、鉻、鈷、銀、金等各種金屬或金屬合金之粒子,於金屬氧化物、碳、石墨、玻璃、陶瓷、塑膠等之粒子之表面塗佈有金屬者,或於該等粒子之表面進而塗佈有絕緣薄膜者等。於使用在樹脂粒子表面塗佈有金屬者之情形時,作為樹脂粒子,例如可列舉:環氧樹脂、酚樹脂、丙烯酸樹脂、丙烯腈-苯乙烯(AS)樹脂、苯并胍胺樹脂、二乙烯苯系樹脂、苯乙烯系樹脂等之粒 子。導電性粒子5由該等材料構成,且滿足上述K值。 As the conductive particles 5, particles of various metals such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, gold, or metal alloys can be used, and metal oxides, carbon, graphite, glass, ceramics, and plastics can be used. The surface of the particles is coated with a metal, or an insulating film is applied to the surface of the particles. When the surface of the resin particle is coated with a metal, examples of the resin particle include an epoxy resin, a phenol resin, an acrylic resin, an acrylonitrile-styrene (AS) resin, a benzoguanamine resin, and the like. Particles such as a vinyl benzene resin or a styrene resin. The conductive particles 5 are composed of these materials and satisfy the above K value.
就連接可靠性之觀點而言,導電性粒子5之平均粒徑較佳為1~20μm,更佳為2~10μm。藉由將導電性粒子5之平均粒徑設為1μm~20μm之範圍,而即便因加壓而壓縮變形亦可電性連接。 The average particle diameter of the conductive particles 5 is preferably from 1 to 20 μm, more preferably from 2 to 10 μm, from the viewpoint of connection reliability. By setting the average particle diameter of the conductive particles 5 to a range of 1 μm to 20 μm, the conductive particles 5 can be electrically connected even if they are compressed and deformed by pressurization.
又,就連接可靠性及絕緣可靠性之觀點而言,絕緣性接著劑4中之導電性粒子5之平均粒子密度較佳為1000~50000個/mm2,更佳為3000~30000個/mm2。 Further, the average particle density of the conductive particles 5 in the insulating adhesive 4 is preferably from 1,000 to 50,000/mm 2 , more preferably from 3,000 to 30,000/mm, from the viewpoint of connection reliability and insulation reliability. 2 .
由此種構成所構成之膜積層體1可藉由如下方式製造:於甲苯或乙酸乙酯等溶劑中溶解上述絕緣性接著劑(黏合劑)4,製作分散有導電性粒子5之異向性導電組成物,將該異向性導電組成物以成為所需厚度之方式塗佈於具有剝離性之剝離膜2上,進行乾燥而去除溶劑,而形成異向性導電膜3。 The film laminate 1 having such a configuration can be produced by dissolving the above-mentioned insulating adhesive (adhesive) 4 in a solvent such as toluene or ethyl acetate to produce an anisotropy in which the conductive particles 5 are dispersed. The electrically conductive composition is applied to the release film 2 having releasability so as to have a desired thickness, and is dried to remove the solvent to form the anisotropic conductive film 3.
再者,膜積層體1並不限定於在此種剝離膜2上形成有異向性導電膜3之構成,亦可於異向性導電膜3積層例如僅由絕緣性接著劑4構成之絕緣性樹脂層(NCF:Non Conductive Film(非導電性膜)層)。 Further, the film laminate 1 is not limited to the configuration in which the anisotropic conductive film 3 is formed on the release film 2, and the insulating layer 3 may be laminated, for example, only by the insulating adhesive 4. Resin layer (NCF: Non Conductive Film).
又,膜積層體1亦可設為於異向性導電膜3之積層有剝離膜2之面的相反面側亦設置剝離膜之構成。 Further, the film laminate 1 may be configured such that a release film is provided on the opposite side of the surface of the anisotropic conductive film 3 on which the release film 2 is laminated.
由如上所述之構成所構成之膜積層體1之異向性導電膜3中導電性粒子5之30%壓縮變形時之壓縮硬度為150~400Kgf/mm2,藉此,若進行加壓則大致球狀之粒子會因荷重而變形。因此,於該異向性導電膜3中,於將設置於可撓性之可撓性顯示器之端子與電子零件之端子之間連接及導通時,經壓縮而以稍微壓破之方式變形,故而對於可撓性顯示 器之端子而言並非以點而以面接觸,使接觸面積增加,故而使施加於端子之壓力分散,而可抑制端子產生裂紋,或對可撓性顯示器本身之裂紋產生或破裂。 The compression hardness at the time of 30% compression deformation of the conductive particles 5 in the anisotropic conductive film 3 of the film laminate 1 having the above-described constitution is 150 to 400 Kgf/mm 2 , whereby the pressure is applied. The roughly spherical particles are deformed by the load. Therefore, in the anisotropic conductive film 3, when the terminal provided on the flexible flexible display is connected and electrically connected to the terminal of the electronic component, it is deformed by being slightly crushed by compression. The terminal of the flexible display is not in surface contact with dots, and the contact area is increased, so that the pressure applied to the terminal is dispersed, and cracking of the terminal or cracking or cracking of the flexible display itself can be suppressed. .
<連接結構體、連接結構體之製造方法、連接方法> <Connection structure, method of manufacturing the connection structure, and connection method>
其次,對使用該異向性導電膜3將可撓性顯示器之端子與電子零件之端子導通並連接之連接方法及藉此製造之連接結構體、連接結構體之製造方法進行說明。 Next, a connection method in which the terminals of the flexible display and the terminals of the electronic component are electrically connected and connected using the anisotropic conductive film 3, a connection structure manufactured thereby, and a method of manufacturing the connection structure will be described.
圖3所示之連接結構體10係於可撓性顯示器11機械及電性地連接固定有作為用以使該可撓性顯示器11驅動之電子零件的IC晶片12及用以與外部電性連接之可撓性印刷電路板13。連接結構體10具有:顯示部10a,其顯示圖像等;及構裝部10b,其係將IC晶片12及可撓性印刷電路板13機械及電性地連接構裝。 The connection structure 10 shown in FIG. 3 is connected to the flexible display 11 to mechanically and electrically connect the IC chip 12 as an electronic component for driving the flexible display 11 and to be electrically connected to the outside. Flexible printed circuit board 13. The connection structure 10 has a display portion 10a that displays an image or the like, and a configuration portion 10b that mechanically and electrically connects the IC chip 12 and the flexible printed circuit board 13.
可撓性顯示器11具有前面板與背面板之2片可撓性膜14,於該2片可撓性膜14間配置微膠囊層或液晶層等顯示媒體層15,該顯示媒體層15之周圍由利用密封材之密封部16加以密封。可撓性膜14之楊氏模數為10GPa以下,較佳為2~10GPa,進而較佳為3~5GPa。楊氏模數係自對物質施加應力而變形之情形時產生之每單位之應變(變形率)而算出的物質固有的定數。 The flexible display 11 has two flexible films 14 of a front panel and a back panel, and a display medium layer 15 such as a microcapsule layer or a liquid crystal layer is disposed between the two flexible films 14, and the periphery of the display medium layer 15 It is sealed by the sealing portion 16 using the sealing material. The Young's modulus of the flexible film 14 is 10 GPa or less, preferably 2 to 10 GPa, and more preferably 3 to 5 GPa. The Young's modulus is a fixed number of substances that are calculated from the strain (deformation rate) per unit generated when a stress is applied to a substance and deformed.
若該楊氏模數較大,則相對於應力不易變形,若楊氏模數較小,則易於變形。 If the Young's modulus is large, it is not easily deformed with respect to stress, and if the Young's modulus is small, it is easily deformed.
該可撓性膜14之楊氏模數較小,與72GPa左右之玻璃基材相比,對於荷重易變形。該可撓性膜14例如可列舉聚醯亞胺或聚對酞酸乙二酯。如圖 4所示,設置於背面板之可撓性膜14之端子14a、與IC晶片12之端子12a或可撓性印刷電路板13之端子13a藉由壓縮變形之導電性粒子5而電性連接。 The flexible film 14 has a small Young's modulus and is easily deformed with respect to a load compared to a glass substrate of about 72 GPa. The flexible film 14 is exemplified by polyimide or polyethylene terephthalate. As shown in FIG. 4, the terminal 14a of the flexible film 14 provided on the back panel, and the terminal 12a of the IC chip 12 or the terminal 13a of the flexible printed circuit board 13 are electrically connected by the compressively deformed conductive particles 5. connection.
該連接結構體10可利用如下之連接方法製造。首先,進行如下之搭載步驟:於「可撓性膜14之端子14a」與「IC晶片12之端子12a及可撓性印刷電路板13之端子13a」間插入異向性導電膜3,以使可撓性膜14之端子14a與IC晶片12之端子12a及可撓性印刷電路板13之端子13a對向之方式,將IC晶片12及可撓性印刷電路板13搭載於可撓性膜14上。其次,進行如下之連接步驟:對可撓性膜14加壓IC晶片12及可撓性印刷電路板13,利用異向性導電膜3將設置於可撓性膜14之端子14a與IC晶片12之端子12a及可撓性印刷電路板13之端子13a連接及經由異向性導電膜3中之導電性粒子5將其等導通。 The connection structure 10 can be manufactured by the following connection method. First, the mounting step of inserting the anisotropic conductive film 3 between the "terminal 14a of the flexible film 14" and the "terminal 12a of the IC chip 12 and the terminal 13a of the flexible printed circuit board 13" is performed. The IC 14 and the flexible printed circuit board 13 are mounted on the flexible film 14 so that the terminal 14a of the flexible film 14 faces the terminal 12a of the IC chip 12 and the terminal 13a of the flexible printed circuit board 13. on. Next, a connection step is performed in which the IC film 12 and the flexible printed circuit board 13 are pressed against the flexible film 14, and the terminal 14a and the IC chip 12 provided on the flexible film 14 are bonded by the anisotropic conductive film 3. The terminal 12a and the terminal 13a of the flexible printed circuit board 13 are connected and electrically connected via the conductive particles 5 in the anisotropic conductive film 3.
關於連接結構體10之製造方法,例如對使用具備異向性導電膜3之膜積層體1之情形進行說明,該異向性導電膜3係於使用有熱塑性樹脂作為硬化成分之絕緣性接著劑4中含有導電性粒子5者。首先,於搭載步驟中,以於將可撓性膜14之端子14a、與IC晶片12之端子12a及可撓性印刷電路板13之端子13a連接之位置膜積層體1之異向性導電膜3成為可撓性膜14之端子14a側之方式放置,剝取剝離膜2,而僅設為異向性導電膜3,之後將異向性導電膜3黏附於端子14a。該黏附例如係一面稍微進行加壓一面以異向性導電膜3中所含之熱硬化性樹脂成分不硬化之溫度進行加熱。藉此,將異向性導電膜3定位固定於可撓性膜14之端子14a上。 In the method of manufacturing the bonded structure 10, for example, a case where the film laminated body 1 including the anisotropic conductive film 3 is used as an insulating adhesive using a thermoplastic resin as a hardening component will be described. 4 contains conductive particles 5 . First, in the mounting step, the anisotropic conductive film of the film laminate 1 is connected to the terminal 14a of the flexible film 14 and the terminal 12a of the IC chip 12 and the terminal 13a of the flexible printed circuit board 13. 3 is placed so as to be on the terminal 14a side of the flexible film 14, and the release film 2 is peeled off, and only the anisotropic conductive film 3 is used, and then the anisotropic conductive film 3 is adhered to the terminal 14a. The adhesion is performed by, for example, heating at a temperature at which the thermosetting resin component contained in the anisotropic conductive film 3 is not cured while being slightly pressurized. Thereby, the anisotropic conductive film 3 is positioned and fixed to the terminal 14a of the flexible film 14.
其次,於異向性導電膜3上搭載IC晶片12及可撓性印刷電 路板13。電子零件之搭載係於確認異向性導電膜3之位置對準狀態,並未產生位置偏移等之情形時,以使可撓性膜14之端子14a與IC晶片12之端子12a及可撓性印刷電路板13之端子13a對向之方式,將IC晶片12及可撓性印刷電路板13隔著異向性導電膜3搭載於可撓性膜14上。 Next, the IC wafer 12 and the flexible printed circuit board 13 are mounted on the anisotropic conductive film 3. The mounting of the electronic component is performed by confirming the positional alignment state of the anisotropic conductive film 3, and the terminal 14a of the flexible film 14 and the terminal 12a of the IC wafer 12 are flexible. The IC chip 12 and the flexible printed circuit board 13 are mounted on the flexible film 14 via the anisotropic conductive film 3 so that the terminals 13a of the printed circuit board 13 face each other.
其次,將可撓性顯示器11之可撓性膜14、與IC晶片12及可撓性印刷電路板13機械及電性連接之連接步驟係利用可加熱及加壓之擠壓頭自IC晶片12及可撓性印刷電路板13之上面將IC晶片12及可撓性印刷電路板13對可撓性膜14一面進行加熱一面進行加壓,使異向性導電膜3硬化,經由導電性粒子5將可撓性膜14之端子14a與IC晶片12之端子12a及可撓性印刷電路板13之端子13a電性連接,利用絕緣性接著劑4將可撓性膜14與IC晶片12及可撓性印刷電路板13機械連接,藉此,可獲得IC晶片12及可撓性印刷電路板13連接於可撓性顯示器11之連接結構體10。 Next, the connecting step of mechanically and electrically connecting the flexible film 14 of the flexible display 11 and the IC chip 12 and the flexible printed circuit board 13 is performed by using a heatable and pressurizable extrusion head from the IC chip 12. On the upper surface of the flexible printed circuit board 13, the IC wafer 12 and the flexible printed circuit board 13 are pressed while heating the flexible film 14, and the anisotropic conductive film 3 is cured to pass through the conductive particles 5. The terminal 14a of the flexible film 14 is electrically connected to the terminal 12a of the IC chip 12 and the terminal 13a of the flexible printed circuit board 13, and the flexible film 14 and the IC chip 12 are flexibly covered by the insulating adhesive 4. The printed circuit board 13 is mechanically connected, whereby the connection structure 10 in which the IC chip 12 and the flexible printed circuit board 13 are connected to the flexible display 11 can be obtained.
該連接步驟之條件係加熱溫度為異向性導電膜3中所含之熱硬化性樹脂之硬化溫度以上之溫度,自端子14a與端子12a、13a之間排除已熱溶融之異向性導電膜3,以可夾持導電性粒子5之壓力進行加壓。藉此,可撓性膜14與IC晶片12及可撓性印刷電路板13藉由導電性粒子5而電性連接,藉由絕緣性接著劑(黏合劑)4而機械連接。溫度及加壓之具體條件係溫度120℃~150℃左右、壓力1MPa~5MPa左右。 The connection step is carried out under the condition that the heating temperature is a temperature higher than the hardening temperature of the thermosetting resin contained in the anisotropic conductive film 3, and the thermally melted anisotropic conductive film is removed from the terminal 14a and the terminals 12a and 13a. 3. Pressurization is performed at a pressure at which the conductive particles 5 can be held. Thereby, the flexible film 14 and the IC wafer 12 and the flexible printed circuit board 13 are electrically connected by the conductive particles 5, and are mechanically connected by an insulating adhesive (adhesive) 4. The specific conditions of temperature and pressure are about 120 ° C ~ 150 ° C, and the pressure is about 1 MPa ~ 5 MPa.
於連接步驟中,藉由利用擠壓頭將IC晶片12及可撓性印刷電路板13朝可撓性膜14側加壓,而使插入於其等間之導電性粒子5壓縮變形,相對於可撓性膜14之端子14a而言並非以點接觸,而以面接觸,而使與端子14a之接觸面積增加。藉此,於連接步驟中,自導電性粒子5傳遞至 端子14a之每單位面積之壓力減輕,可使施加於端子14a之局部壓力分散,而可防止端子14a產生裂紋,又,可防止可撓性膜14亦產生裂紋,或破裂。 In the connecting step, the IC wafer 12 and the flexible printed circuit board 13 are pressed toward the flexible film 14 by the extrusion head, and the conductive particles 5 inserted between them are compressed and deformed. The terminal 14a of the flexible film 14 is not in point contact but is in surface contact, and the contact area with the terminal 14a is increased. Thereby, in the connecting step, the pressure per unit area transmitted from the conductive particles 5 to the terminal 14a is reduced, and the partial pressure applied to the terminal 14a can be dispersed, and the crack of the terminal 14a can be prevented, and the deflection can be prevented. The film 14 also cracks or ruptures.
如上所述之連接結構體10之製造方法係藉由異向性導電膜3所含有之導電性粒子5之30%壓縮變形時之壓縮硬度為150~400Kgf/mm2,而可防止於將可撓性膜14與電子零件連接時,尤其於與端子分散存在之IC晶片12連接時,可撓性膜14之端子14a產生裂紋,及防止可撓性膜14本身產生裂紋,或破裂,其中,該異向性導電膜3插入於可撓性膜14之端子14a、與IC晶片12之端子12a及可撓性印刷電路板13之端子13a間。因此,於該連接結構體10之製造方法中,可不使可撓性膜14之端子14a產生裂紋,而且亦不使可撓性膜14本身產生裂紋,且不破裂而將電子零件構裝於可撓性膜14上。 The method for manufacturing the bonded structure 10 as described above is such that the compressive hardness at the time of 30% compression deformation of the conductive particles 5 contained in the anisotropic conductive film 3 is 150 to 400 Kgf/mm 2 , which can be prevented. When the flexible film 14 is connected to the electronic component, particularly when it is connected to the IC wafer 12 in which the terminal is dispersed, the terminal 14a of the flexible film 14 is cracked, and the flexible film 14 itself is prevented from being cracked or broken. The anisotropic conductive film 3 is inserted between the terminal 14a of the flexible film 14 and the terminal 12a of the IC chip 12 and the terminal 13a of the flexible printed circuit board 13. Therefore, in the method of manufacturing the connection structure 10, the terminal 14a of the flexible film 14 can be prevented from being cracked, and the flexible film 14 itself can be prevented from being cracked, and the electronic component can be constructed without being broken. On the flexible film 14.
因此,連接結構體10之製造方法係於在可撓性顯示器11之具有顯示媒體層15之顯示部10a附近或在顯示部10a之正下方存在電子零件之構裝區域之情形時,即便構裝部10b為狹窄之構裝區域亦不會使可撓性膜14之端子14a產生裂紋,而且亦不會使可撓性膜14本身產生裂紋,且不會破裂,故而裂紋或破裂不會順延至顯示部10a,可防止對顯示媒體層15產生之圖像等之顯示造成影響。 Therefore, the manufacturing method of the connection structure 10 is in the case where the electronic component mounting region is present in the vicinity of the display portion 10a of the flexible display 11 having the display medium layer 15 or directly under the display portion 10a, even if it is configured The narrow portion of the portion 10b does not cause cracks in the terminal 14a of the flexible film 14, and does not cause cracks in the flexible film 14 itself, and does not break, so that cracks or cracks are not delayed. The display unit 10a can prevent the display of an image or the like generated on the display medium layer 15 from being affected.
上述連接結構體10為將1個IC晶片12及可撓性印刷電路板13機械及電性地連接於可撓性顯示器11之構成,但並不限定於此,亦可為如圖5所示之連接結構體20。連接結構體20為利用異向性導電膜3將2個IC晶片12及可撓性印刷電路板13機械及電性地連接於可撓性顯示器11之構成。該連接結構體20具有:顯示部20a,其顯示由未圖示之顯示媒體 層產生之圖像等;及構裝部20b,其係將IC晶片12及可撓性印刷電路板13機械及電性地連接構裝。此種連接結構體20亦與上述連接結構體10同樣地,不會使可撓性膜14之端子14a產生裂紋,又,不會使可撓性膜14本身破裂。 The connection structure 10 is configured to mechanically and electrically connect one IC chip 12 and the flexible printed circuit board 13 to the flexible display 11 . However, the connection structure 10 is not limited thereto, and may be as shown in FIG. 5 . The structure 20 is connected. The connection structure 20 is configured to mechanically and electrically connect the two IC chips 12 and the flexible printed circuit board 13 to the flexible display 11 by the anisotropic conductive film 3. The connection structure 20 has a display portion 20a that displays an image generated by a display medium layer (not shown), and a configuration portion 20b that mechanically and electrically separates the IC chip 12 and the flexible printed circuit board 13. Connect the assembly. Similarly to the above-described connection structure 10, the connection structure 20 does not cause cracks in the terminal 14a of the flexible film 14, and does not cause the flexible film 14 itself to be broken.
又,上述連接結構體10、20無需進行用以防止可撓性顯示器11之端子14a產生裂紋之增強處理,與先前之可撓性顯示器11之製造步驟相比並無變化,可防止製造成本變高。 Further, the connection structures 10 and 20 do not need to be reinforced to prevent cracks in the terminals 14a of the flexible display 11, and there is no change from the manufacturing steps of the conventional flexible display 11, and the manufacturing cost can be prevented from being changed. high.
連接結構體10、20並不限定於上述可撓性顯示器,亦可為對可撓性膜等可撓性基材連接有IC晶片12及可撓性印刷電路板13等電子零件者。 The connection structures 10 and 20 are not limited to the above-described flexible display, and may be an electronic component such as an IC chip 12 or a flexible printed circuit board 13 to which a flexible substrate such as a flexible film is connected.
又,電子零件並不限定於IC晶片12或可撓性印刷電路板13,亦可為其他電子零件。例如可列舉LSI(Large Scale Integration,大型積體電路)晶片等IC晶片以外之半導體晶片或晶片電容器等半導體元件、液晶驅動用半導體構裝材料(COF:Chip On FiLm,薄膜覆晶)等。又,電子零件亦可於可撓性顯示器11構裝2個以上,電子零件之構裝位置亦不限定於圖4及圖5,亦可構裝於顯示部10a、20a之正下方。 Further, the electronic component is not limited to the IC chip 12 or the flexible printed circuit board 13, and may be other electronic components. For example, a semiconductor element such as a semiconductor wafer or a wafer capacitor other than an IC wafer such as an LSI (Large Scale Integration) wafer, a liquid crystal driving semiconductor package material (COF: Chip On FiLm), or the like can be cited. Further, the electronic component may be mounted on the flexible display 11 in two or more. The mounting position of the electronic component is not limited to FIG. 4 and FIG. 5, and may be directly under the display portions 10a and 20a.
以上,已對本實施形態進行了說明,當然本發明並不限定於上述實施形態,可於不脫離本發明之主旨之範圍內進行各種變更。 The present invention has been described above, and the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the invention.
實施例 Example
其次,基於實際進行之實驗結果對本發明之具體實施例進行說明,但本發明並不限定於該等實施例。 Next, specific embodiments of the present invention will be described based on actual experimental results, but the present invention is not limited to the embodiments.
<異向性導電膜之製作> <Production of an anisotropic conductive film>
(實施例1~實施例5) (Examples 1 to 5)
於實施例1~實施例5中,以固形物成分成為50%之方式添加作為膜形成樹脂之苯氧樹脂(YP50,新日鐵化學公司製造)30質量份、液狀環氧樹脂(EP-828,三菱化學公司製造)20質量份、咪唑系潛伏性硬化劑(Novacure 3941HP,旭化成E-MATERIALS公司製造)、矽烷偶合劑(A-187,Momentive Performance Materials公司製造)2質量份、具有特定硬度之導電性粒子10質量份、甲苯,而製備異向性導電組成物。繼而,使用棒式塗佈機將上述異向性導電組成物塗佈於剝離基材上,使用烘箱使甲苯乾燥,而製作膜厚20μm之異向性導電膜。 In Example 1 to Example 5, 30 parts by mass of a phenoxy resin (YP50, manufactured by Nippon Steel Chemical Co., Ltd.) as a film-forming resin, and a liquid epoxy resin (EP-) were added so as to have a solid content of 50%. 828, manufactured by Mitsubishi Chemical Corporation, 20 parts by mass, an imidazole-based latent curing agent (Novacure 3941HP, manufactured by Asahi Kasei E-MATERIALS Co., Ltd.), a decane coupling agent (A-187, manufactured by Momentive Performance Materials Co., Ltd.), 2 parts by mass, having a specific hardness An anisotropic conductive composition was prepared by using 10 parts by mass of conductive particles and toluene. Then, the anisotropic conductive composition was applied onto a release substrate using a bar coater, and toluene was dried in an oven to prepare an anisotropic conductive film having a film thickness of 20 μm.
導電性粒子係由樹脂形成芯部,並對該芯部實施鍍鎳(Ni)或鎳金(NiAu)而製作。具體而言,芯部之樹脂粒子係藉由在調整了二乙烯苯、苯乙烯、甲基丙烯酸丁酯之混合比之溶液中投入作為聚合起始劑之過氧化苯甲醯並一面高速地均勻攪拌一面進行加熱,並進行聚合反應而獲得微粒子分散液。繼而,藉由將該微粒子分散液過濾並進行減壓乾燥而獲得微粒子之凝聚體即塊體。進而,藉由將該塊體粉碎,而獲得具有各種硬度之平均粒徑3.0μm之二乙烯苯系樹脂粒子。 The conductive particles are formed by forming a core portion of a resin, and plating the core portion with nickel (Ni) or nickel gold (NiAu). Specifically, the resin particles of the core are charged with benzammonium peroxide as a polymerization initiator in a solution in which the mixing ratio of divinylbenzene, styrene, and butyl methacrylate is adjusted, and uniform at a high speed. Heating was carried out while stirring, and polymerization was carried out to obtain a fine particle dispersion. Then, the microparticle dispersion is filtered and dried under reduced pressure to obtain a bulk which is an aggregate of fine particles. Further, by pulverizing the bulk, divinylbenzene-based resin particles having an average particle diameter of 3.0 μm of various hardnesses were obtained.
繼而,對以上述方式獲得之二乙烯苯系樹脂粒子實施鍍Ni或鍍NiAu,而製作對二乙烯苯系樹脂粒子實施鍍Ni或鍍NiAu而成之導電性粒子。 Then, the divinylbenzene-based resin particles obtained in the above manner are subjected to Ni plating or NiAu plating to prepare conductive particles obtained by plating Ni or NiAu on the divinylbenzene resin particles.
對二乙烯苯系樹脂粒子實施鍍Ni而成之導電性粒子係藉由浸漬法而使3μm之二乙烯苯系樹脂粒子5g中載持鈀觸媒。其次,對該樹脂粒子使用由硫酸鎳六水合物、次亞磷酸鈉、檸檬酸鈉、三乙醇胺及硝酸 鉈製備之無電解鍍鎳液(pH12,鍍敷液溫50℃)進行無電解鍍鎳,而獲得於表面形成有具有各種磷含量之鍍鎳層(金屬層)之鎳被膜樹脂粒子作為導電粒子(樹脂芯鍍Ni粒子)。所獲得之導電性粒子之平均粒徑為3~4μm之範圍內。 Conductive particles obtained by plating Ni on the divinylbenzene-based resin particles are supported by a palladium catalyst in 5 g of 3 μm of divinylbenzene-based resin particles by a dipping method. Next, an electroless nickel plating solution (pH 12, plating liquid temperature: 50 ° C) prepared from nickel sulfate hexahydrate, sodium hypophosphite, sodium citrate, triethanolamine, and cerium nitrate was used for the resin particles to perform electroless nickel plating. On the other hand, nickel-coated resin particles having a nickel plating layer (metal layer) having various phosphorus contents were formed as conductive particles (resin core-plated Ni particles). The average particle diameter of the obtained conductive particles is in the range of 3 to 4 μm.
對二乙烯苯系樹脂粒子實施鍍NiAu而成之導電性粒子係於使氯金酸鈉10g溶解於離子交換水1000mL而成之溶液中混合二乙烯苯系樹脂粒子12g而製備水性懸濁液。藉由在所獲得之水性懸濁液中投入硫代硫酸銨15g、亞硫酸銨80g、及磷酸氫銨40g而製備鍍金浴。於所獲得之鍍金浴中投入羥基胺4g之後,使用氨將鍍金浴之pH值調整為9,將其浴溫維持於60℃並維持15~20分鐘左右,藉此獲得於表面形成有鍍金鎳層(金屬層)之鎳被膜樹脂粒子(樹脂芯鍍NiAu粒子)。所獲得之導電性粒子之平均粒徑為3~4μm之範圍內。 The conductive particles obtained by subjecting the divinylbenzene-based resin particles to NiAu were mixed with 12 g of sodium chloroaurate dissolved in 1000 mL of ion-exchanged water to prepare 12 g of divinylbenzene-based resin particles to prepare an aqueous suspension. A gold plating bath was prepared by adding 15 g of ammonium thiosulfate, 80 g of ammonium sulfite, and 40 g of ammonium hydrogen phosphate to the obtained aqueous suspension. After 4 g of hydroxylamine was added to the obtained gold plating bath, the pH of the gold plating bath was adjusted to 9 by using ammonia, and the bath temperature was maintained at 60 ° C for about 15 to 20 minutes, thereby obtaining gold-plated nickel on the surface. Nickel film resin particles (resin core-plated NiAu particles) of a layer (metal layer). The average particle diameter of the obtained conductive particles is in the range of 3 to 4 μm.
導電性粒子之30%壓縮變形時之壓縮硬度分別如表1所示。導電性粒子之30%壓縮變形時之壓縮硬度係如上所述,於室溫下於具有平滑表面之鋼板上散佈導電性粒子,自散佈之導電性粒子中選擇1個導電性粒子。繼而,藉由將微小壓縮試驗機(例如PCT-200型:島津製作所股份有限公司製造)所具備之金剛石製之直徑50μm之圓柱之平滑端面抵壓於所選擇之1個導電性粒子,而壓縮該導電性粒子。繼而,根據圖2所示之關係,自導電性粒子之30%壓縮時之壓縮移位S(mm)算出荷重值F(kgf)。 The compression hardness at 30% compression deformation of the conductive particles is shown in Table 1, respectively. As described above, the compressive hardness at the time of 30% compression deformation of the conductive particles is such that the conductive particles are scattered on the steel sheet having a smooth surface at room temperature, and one conductive particle is selected from the conductive particles dispersed. Then, a smooth end surface of a 50 μm diameter cylinder made of diamond made of a micro compression tester (for example, PCT-200 type: manufactured by Shimadzu Corporation) is pressed against the selected one of the conductive particles to be compressed. The conductive particles. Then, according to the relationship shown in Fig. 2, the load value F (kgf) is calculated from the compression shift S (mm) at 30% compression of the conductive particles.
繼而,藉由算出之荷重值F(kgf)及壓縮移位S(mm),使用式(1)算出30%壓縮時之壓縮硬度K值。 Then, by calculating the load value F (kgf) and the compression shift S (mm), the compression hardness K value at the time of 30% compression is calculated using the formula (1).
(比較例1~比較例3) (Comparative Example 1 to Comparative Example 3)
關於比較例1~比較例3,以使樹脂芯鍍Ni粒子之30%壓縮時之壓縮硬度成為如表1所示之方式製作導電性粒子,除此以外,與實施例同樣地製作異向性導電膜。 In Comparative Example 1 to Comparative Example 3, an anisotropic property was produced in the same manner as in the Example except that the compressive hardness at the time of 30% compression of the resin core-plated Ni particles was changed as shown in Table 1. Conductive film.
<裂紋之產生試驗> <Crack generation test>
於裂紋之產生試驗中,使用具有表1所示之楊氏模數之聚醯亞胺或聚對酞酸乙二酯(PET)之可撓性膜。於該可撓性膜上以尺寸為20mm×40mm×總厚度50.6μm,且PI/AI/ITO=50μm/0.5μm/0.1μm、間距50μm形成配線。 In the crack generation test, a flexible film having a Young's modulus of the Young's modulus shown in Table 1 or polyethylene terephthalate (PET) was used. Wiring was formed on the flexible film with a size of 20 mm × 40 mm × total thickness of 50.6 μm, and PI/AI/ITO = 50 μm / 0.5 μm / 0.1 μm and a pitch of 50 μm.
其次,於形成有配線之可撓性膜上載置製得之異向性導電膜,以隔著異向性導電膜使IC晶片之端子與配線對向之方式將IC晶片載置於異向性導電膜上。繼而,自IC晶片之上面利用擠壓頭以溫度200℃、壓力600kgf/cm2之條件進行加熱、加壓而將其等連接,從而製作連接結構體。 Next, the anisotropic conductive film placed on the flexible film on which the wiring is formed is placed on the IC wafer in such a manner that the IC wafer is placed opposite to the wiring via the anisotropic conductive film. On the conductive film. Then, the upper surface of the IC wafer was heated and pressurized by a pressing head at a temperature of 200 ° C and a pressure of 600 kgf / cm 2 to be connected thereto, thereby producing a bonded structure.
而且,配線之裂紋之產生係藉由目視而確認。裂紋之產生率係表示100個配線中產生裂紋之比例。於表1及表2中表示裂紋產生率。 Moreover, the occurrence of cracks in the wiring was confirmed by visual observation. The rate of occurrence of cracks indicates the ratio of cracks generated in 100 wirings. The crack generation rate is shown in Tables 1 and 2.
<導通電阻值之試驗> <Test of on-resistance value>
導通電阻值之試驗係與裂紋之產生試驗同樣地,將可撓性膜與可撓性配線基板連接,而製作連接結構體,並測定導通電阻。使用於可撓性配線基板以尺寸為20mm×40mm×50.5μm,且PI/AI/ITO=50μm/0.5μm/0.1μm、間距50μm形成有導通測定用配線之測定用特性評價用元件。評價於85℃/85%RH環境下放置125小時後(老化後)之導通電阻值。導通電阻值係使用digital-multimeter(商品名:digital-multimeter 7561,橫河 電機公司製造),且利用4端子法測定使電流1mA流通時之導通電阻值。於老化後之導通電阻值為10Ω以下之情形時,設為電阻較低。於表1及表2中表示導通電阻值之測定結果。 In the test of the on-resistance value, the flexible film was connected to the flexible wiring board in the same manner as the crack generation test, and the connection structure was produced, and the on-resistance was measured. In the flexible wiring board, the element for measurement characteristic measurement for conducting the measurement wiring was formed with a size of 20 mm × 40 mm × 50.5 μm and PI / AI / ITO = 50 μm / 0.5 μm / 0.1 μm and a pitch of 50 μm. The on-resistance value after leaving for 125 hours (after aging) in an environment of 85 ° C / 85% RH was evaluated. The on-resistance value was measured by using a digital-multimeter (trade name: digital-multimeter 7561, manufactured by Yokogawa Electric Co., Ltd.), and the on-resistance value at the time of flowing a current of 1 mA was measured by a four-terminal method. When the on-resistance value after aging is 10 Ω or less, the resistance is set to be low. The measurement results of the on-resistance values are shown in Tables 1 and 2.
由表1及2所示之結果可知,於實施例1~5中,配線未產生裂紋,或即便產生裂紋產生率與比較例2及3相比亦變低,裂紋之產生得以抑制。因此,由實施例1~5可知,藉由使異向性導電膜中之導電粒子之30%壓縮變形時之壓縮硬度為150~400Kgf/mm2之範圍內,可抑制配線之裂紋產生。 As is clear from the results shown in Tables 1 and 2, in Examples 1 to 5, cracks did not occur in the wiring, and the occurrence rate of cracks was lower than that of Comparative Examples 2 and 3, and generation of cracks was suppressed. Therefore, it is understood from Examples 1 to 5 that the compression hardness at the time of 30% compression deformation of the conductive particles in the anisotropic conductive film is in the range of 150 to 400 Kgf/mm 2 , thereby suppressing the occurrence of cracks in the wiring.
又,於實施例1~5中,導通電阻值與比較例1相比變低,導通電阻變低。因此,由實施例1~5可知,藉由使異向性導電膜中之導電粒子之30%壓縮變形時之壓縮硬度為150~400Kgf/mm2之範圍內,可抑制配線之裂紋產生,並且可降低導通電阻值。實施例中,實施例2未產生配線之裂紋,且導通電阻值變低。 Further, in Examples 1 to 5, the on-resistance value was lower than that of Comparative Example 1, and the on-resistance was lowered. Therefore, it is understood from Examples 1 to 5 that the crack hardness of the wiring can be suppressed by suppressing the compression hardness at 30% of the conductive particles in the anisotropic conductive film from 150 to 400 Kgf/mm 2 , and The on-resistance value can be reduced. In the examples, in Example 2, cracks in the wiring were not generated, and the on-resistance value was lowered.
相對於該等實施例,比較例1中導電性粒子之30%壓縮變形時之壓縮硬度為100Kgf/mm2,硬度較低,故而未產生配線之裂紋,但產生導電性粒子向配線之沒入不足,無法獲得較低之導通電阻值。 With respect to these examples, the compression hardness at the time of 30% compression deformation of the conductive particles in Comparative Example 1 was 100 Kgf/mm 2 , and the hardness was low. Therefore, cracks in the wiring were not generated, but the conductive particles were immersed in the wiring. Insufficient to obtain a lower on-resistance value.
比較例2及3中導電性粒子之30%壓縮變形時之壓縮硬度為500Kgf/mm2、720Kgf/mm2,故而硬度較高而較硬,故而導電電阻變低,但產生配線裂紋。比較例3與比較例2相比較硬,故而更容易產生配線之裂紋。 In Comparative Examples 2 and 3, when the 30% compression deformation of the conductive particles was 500 Kgf/mm 2 and 720 Kgf/mm 2 , the hardness was high and hard, and thus the electric resistance was low, but wiring cracks were generated. Since Comparative Example 3 is harder than Comparative Example 2, cracks in the wiring are more likely to occur.
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