TWI647798B - Electronic package and its manufacturing method - Google Patents
Electronic package and its manufacturing method Download PDFInfo
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- TWI647798B TWI647798B TW105128611A TW105128611A TWI647798B TW I647798 B TWI647798 B TW I647798B TW 105128611 A TW105128611 A TW 105128611A TW 105128611 A TW105128611 A TW 105128611A TW I647798 B TWI647798 B TW I647798B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 230000001681 protective effect Effects 0.000 claims abstract description 29
- 238000005253 cladding Methods 0.000 claims abstract description 25
- 239000004020 conductor Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000000227 grinding Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 100
- 239000000463 material Substances 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 11
- 239000011247 coating layer Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 description 19
- 229910000679 solder Inorganic materials 0.000 description 18
- 238000004806 packaging method and process Methods 0.000 description 17
- 238000009413 insulation Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- 229920002577 polybenzoxazole Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 abbreviated as PI) Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0233—Structure of the redistribution layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02379—Fan-out arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
一種電子封裝件係包括:第一線路結構;設於該第一線路結構上之電子元件與導電柱;設於該電子元件上之導電體;包覆該電子元件、導電體與導電柱之包覆層;以及形成於該包覆層上之第二線路結構,以藉由該導電體凸出該電子元件上之保護膜,而增加研磨製程容許誤差範圍及減少成本。本發明復提供該電子封裝件之製法。 An electronic package includes: a first circuit structure; an electronic component and a conductive pillar provided on the first circuit structure; a conductor provided on the electronic component; and a package covering the electronic component, the conductor and the conductive pillar A cladding layer; and a second circuit structure formed on the cladding layer to protrude the protective film on the electronic component through the conductor, thereby increasing the tolerance range of the grinding process and reducing the cost. The invention further provides a method for manufacturing the electronic package.
Description
本發明係有關一種半導體封裝技術,尤指一種堆疊型電子封裝件及其製法。 The invention relates to a semiconductor packaging technology, in particular to a stacked electronic package and a method for manufacturing the same.
隨著半導體封裝技術的演進,半導體裝置(Semiconductor device)已開發出不同的封裝型態,而為提升電性功能及節省封裝空間,遂開發出不同的立體封裝技術,例如,扇出式封裝堆疊(Fan Out Package on package,簡稱FO PoP)等,以配合各種晶片上大幅增加之輸入/出埠數量,進而將不同功能之積體電路整合於單一封裝結構,此種封裝方式能發揮系統封裝(SiP)異質整合特性,可將不同功用之電子元件,例如:記憶體、中央處理器、繪圖處理器、影像應用處理器等,藉由堆疊設計達到系統的整合,適合應用於輕薄型電子產品。 With the evolution of semiconductor packaging technology, semiconductor devices have developed different packaging types. In order to improve electrical functions and save packaging space, different three-dimensional packaging technologies have been developed, such as fan-out packaging stacking. (Fan Out Package on package, referred to as FO PoP), etc., in order to match the greatly increased number of input / output ports on various chips, and then integrate the integrated circuits of different functions into a single package structure. This packaging method can take advantage of system packaging ( SiP) Heterogeneous integration features can integrate electronic components with different functions, such as memory, central processing unit, graphics processor, image application processor, etc. through stack design to achieve system integration, suitable for light and thin electronic products.
第1圖係為習知用於PoP之半導體封裝件1的剖面示意圖。如第1圖所示,該半導體封裝件1係包括一具有至少一線路層101之封裝基板10、以及結合於該線路層101上之一半導體元件11。 FIG. 1 is a schematic cross-sectional view of a conventional semiconductor package 1 for PoP. As shown in FIG. 1, the semiconductor package 1 includes a packaging substrate 10 having at least one circuit layer 101 and a semiconductor element 11 coupled to the circuit layer 101.
具體地,該半導體元件11具有相對之作用面11a與非作用面11b,該作用面11a具有複數電極墊110,其上設有銲錫凸塊12、鈍化層120與該保護膜111,該些銲錫凸塊12凸出該鈍化層120,而該保護膜111包覆該些銲錫凸塊12,且該非作用面11b藉由黏著層13設於該封裝基板10上。 Specifically, the semiconductor element 11 has an opposite active surface 11a and a non-active surface 11b. The active surface 11a has a plurality of electrode pads 110, and there are solder bumps 12, a passivation layer 120, and the protective film 111. The bumps 12 protrude from the passivation layer 120, the protective film 111 covers the solder bumps 12, and the non-active surface 11 b is disposed on the packaging substrate 10 through an adhesive layer 13.
再者,於該封裝基板10上形成有一封裝膠體15,以包覆該保護膜111及該半導體元件11,且形成複數導電通孔14於該封裝膠體15中,以令該導電通孔14之端面外露於該封裝膠體15,俾供後續藉由銲球(圖略)結合一如半導體晶片、矽中介板或封裝結構等之電子裝置(圖略)。 Furthermore, a packaging gel 15 is formed on the packaging substrate 10 to cover the protective film 111 and the semiconductor element 11, and a plurality of conductive vias 14 are formed in the packaging gel 15 so that the conductive vias 14 The end surface is exposed from the packaging gel 15 for subsequent bonding of an electronic device such as a semiconductor chip, a silicon interposer, or a packaging structure by a solder ball (not shown).
又,藉由整平製程(如第1圖中之整平面Y),移除部分該封裝膠體15、導電通孔14、銲錫凸塊12與該保護膜111,令該銲錫凸塊12與該保護膜111外露於該封裝膠體15,俾供後續藉由線路(圖略)電性連接該銲錫凸塊12。 In addition, by a leveling process (such as the entire plane Y in FIG. 1), a part of the encapsulant 15, the conductive vias 14, the solder bump 12 and the protective film 111 are removed, so that the solder bump 12 and the protective film 111 The protective film 111 is exposed from the packaging gel 15 for subsequent electrical connection to the solder bump 12 through a circuit (not shown).
然而,習知半導體封裝件1之製法中,該保護膜111覆蓋該銲錫凸塊12,故於整平製程時,除了研磨該封裝膠體15外,還需研磨該保護膜111之部分材質以露出該銲錫凸塊12,因而會增加研磨介面,導致發生過磨及作業性不佳等問題。 However, in the conventional manufacturing method of the semiconductor package 1, the protective film 111 covers the solder bumps 12, so during the leveling process, in addition to grinding the packaging gel 15, a part of the material of the protective film 111 needs to be polished to expose The solder bumps 12 increase the polishing interface, which causes problems such as over-grinding and poor workability.
再者,習知半導體封裝件1中,係以該導電通孔14之外露端面作為外接點,故當外接點之數量需增加時,該導電通孔14之間的間距需縮小,此時各該導電通孔14之端面上之銲球之間容易發生橋接(bridge)。 Furthermore, in the conventional semiconductor package 1, the exposed end surface of the conductive via 14 is used as the external connection point. Therefore, when the number of external connection points needs to be increased, the distance between the conductive vias 14 needs to be reduced. Bridges are easily generated between solder balls on the end surfaces of the conductive vias 14.
因此,如何克服習知技術之種種缺點,實為目前各界亟欲解決之技術問題。 Therefore, how to overcome the various shortcomings of the conventional technology is really a technical problem that various circles are desperately trying to solve.
鑒於上述習知技術之缺失,本發明提供一種電子封裝件,係包括:第一線路結構,係具有相對之第一側與第二側,且該第一側上形成有電性連接該第一線路結構之導電柱;電子元件,係設於該第一線路結構之第一側上,且該電子元件上係結合並電性連接複數導電體;包覆層,係形成於該第一線路結構之第一側上,以令該包覆層包覆該電子元件、該導電體與該導電柱,且令該導電體之端面與該導電柱之端面外露於該包覆層;以及第二線路結構,係形成於該包覆層上且電性連接至該導電柱之端面與該導電體之端面。 In view of the lack of the conventional technology, the present invention provides an electronic package including: a first circuit structure having a first side and a second side opposite to each other, and an electrical connection is formed on the first side. The conductive pillar of the circuit structure; the electronic component is provided on the first side of the first circuit structure, and the electronic component is coupled to and electrically connected to a plurality of conductive bodies; the cladding layer is formed on the first circuit structure On the first side, the cover layer covers the electronic component, the conductor, and the conductive post, and the end surface of the conductor and the end of the conductive post are exposed to the cover layer; and the second circuit The structure is formed on the cladding layer and is electrically connected to an end surface of the conductive pillar and an end surface of the conductive body.
本發明復提供一種電子封裝件之製法,係包括:提供一第一線路結構,該第一線路結構具有相對之第一側與第二側;於該第一側上形成電性連接該第一線路結構之導電柱,且於該第一側上設置電子元件,其中,該電子元件上係結合並電性連接複數導電體;形成包覆層於該第一線路結構之第一側上,以令該包覆層包覆該電子元件、該導電體與該導電柱,且令該導電體之端面與該導電柱之端面外露於該包覆層;以及形成第二線路結構於該包覆層上,且令該第二線路結構電性連接至該導電柱之端面與該導電體之端面。 The invention further provides a method for manufacturing an electronic package, which includes: providing a first circuit structure, the first circuit structure having a first side and a second side opposite to each other; and electrically connecting the first side to the first side. The conductive pillar of the circuit structure is provided with an electronic component on the first side, wherein the electronic component is connected with and electrically connected to a plurality of conductive bodies; a covering layer is formed on the first side of the first circuit structure, and Making the covering layer cover the electronic component, the conductor and the conductive pillar, and exposing the end surface of the conductor and the end surface of the conductive pillar to the covering layer; and forming a second circuit structure on the covering layer And the second circuit structure is electrically connected to an end surface of the conductive pillar and an end surface of the conductive body.
前述之電子封裝件及其製法中,該電子元件係具有保 護膜,且該導電體凸出該保護膜。 In the aforementioned electronic package and its manufacturing method, the electronic component has a protective film, and the conductive body protrudes from the protective film.
前述之電子封裝件及其製法中,該電子元件係具有相對之作用面與非作用面,且該作用面結合並電性連接該些導電體。 In the aforementioned electronic package and its manufacturing method, the electronic component has opposite active surfaces and non-active surfaces, and the active surfaces are combined and electrically connected to the electrical conductors.
前述之電子封裝件及其製法中,該電子元件係具有線路層,以結合並電性連接該些導電體。 In the aforementioned electronic package and its manufacturing method, the electronic component has a circuit layer to combine and electrically connect the conductive bodies.
前述之電子封裝件及其製法中,該包覆層之表面係齊平該導電柱之端面。 In the aforementioned electronic package and its manufacturing method, the surface of the cladding layer is flush with the end surface of the conductive pillar.
前述之電子封裝件及其製法中,該包覆層之表面係齊平該導電體之端面。 In the aforementioned electronic package and its manufacturing method, the surface of the cladding layer is flush with the end surface of the electrical conductor.
前述之電子封裝件及其製法中,復包括形成複數導電元件於該第一線路結構之第二側上。 In the aforementioned electronic package and its manufacturing method, the method further includes forming a plurality of conductive elements on the second side of the first circuit structure.
前述之電子封裝件及其製法中,復包括形成複數導電元件於該第二線路結構上。 In the aforementioned electronic package and its manufacturing method, the method further includes forming a plurality of conductive elements on the second circuit structure.
由上可知,本發明之電子封裝件及其製法,主要藉由該導電體凸出該保護膜,以增加研磨製程容許誤差範圍及減少成本。 It can be known from the above that the electronic package and its manufacturing method of the present invention mainly protrude the protective film through the conductive body, so as to increase the tolerance range of the polishing process and reduce the cost.
再者,藉由該第一與第二線路結構之接觸墊作為外接點,可利於控制各該接觸墊之間的距離,以符合細間距的需求,且能避免各該導電元件之間發生橋接。 Furthermore, by using the contact pads of the first and second circuit structures as external points, it is beneficial to control the distance between the contact pads to meet the requirements of fine pitch, and to avoid bridging between the conductive elements. .
又,藉由在該電子元件之上、下方形成第一與第二線路結構,而無需使用傳統的封裝基板,故可減少該電子封裝件之厚度,並降低生產成本。 In addition, by forming the first and second circuit structures above and below the electronic component without using a conventional packaging substrate, the thickness of the electronic package can be reduced and the production cost can be reduced.
1‧‧‧半導體封裝件 1‧‧‧ semiconductor package
10‧‧‧封裝基板 10‧‧‧ package substrate
101,31‧‧‧線路層 101, 31‧‧‧ Line layer
11‧‧‧半導體元件 11‧‧‧Semiconductor
11a,21a‧‧‧作用面 11a, 21a‧‧‧ surface
11b,21b‧‧‧非作用面 11b, 21b ‧‧‧ non-active surface
110,210‧‧‧電極墊 110,210‧‧‧electrode pads
111,211‧‧‧保護膜 111,211‧‧‧protective film
12‧‧‧銲錫凸塊 12‧‧‧solder bump
120‧‧‧鈍化層 120‧‧‧ passivation layer
13‧‧‧黏著層 13‧‧‧ Adhesive layer
14‧‧‧導電通孔 14‧‧‧ conductive via
15‧‧‧封裝膠體 15‧‧‧ encapsulated colloid
2‧‧‧電子封裝件 2‧‧‧electronic package
20‧‧‧第一線路結構 20‧‧‧First Line Structure
20a‧‧‧第一側 20a‧‧‧first side
20b‧‧‧第二側 20b‧‧‧Second side
200‧‧‧第一絕緣層 200‧‧‧First insulation layer
201‧‧‧第一線路重佈層 201‧‧‧ Redistribution layer of the first line
21‧‧‧電子元件 21‧‧‧Electronic components
22‧‧‧導電體 22‧‧‧Conductor
23‧‧‧導電柱 23‧‧‧ conductive post
24,91‧‧‧結合層 24,91‧‧‧Combination layer
25‧‧‧包覆層 25‧‧‧ cladding
26‧‧‧第二線路結構 26‧‧‧Second Line Structure
260,260’‧‧‧第二絕緣層 260,260’‧Second insulation layer
261,261’‧‧‧第二線路重佈層 261,261’‧‧‧‧ Redistribution layer of the second line
27,29‧‧‧導電元件 27, 29‧‧‧ conductive elements
270‧‧‧凸塊底下金屬層 270‧‧‧ metal layer under the bump
28‧‧‧絕緣保護層 28‧‧‧Insulation protective layer
30‧‧‧絕緣層 30‧‧‧ Insulation
4‧‧‧半導體晶片 4‧‧‧ semiconductor wafer
9‧‧‧承載板 9‧‧‧ bearing plate
90‧‧‧離型層 90‧‧‧ release layer
第1圖係為習知半導體封裝件的剖面示意圖;以及第2A至2D圖係為本發明之電子封裝件及其製法的剖面示意圖,其中,第2D’圖係為第2D圖之另一實施例。 Figure 1 is a schematic cross-sectional view of a conventional semiconductor package; and Figures 2A to 2D are schematic cross-sectional views of an electronic package and a method for manufacturing the same according to the present invention, wherein Figure 2D 'is another implementation of Figure 2D example.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following describes the implementation of the present invention through specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this specification are only used to match the content disclosed in the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present invention. The limited conditions are not technically significant. Any modification of the structure, change of the proportional relationship, or adjustment of the size should still fall within the scope of this invention without affecting the effects and goals that can be achieved by the present invention. The technical content disclosed by the invention can be covered. At the same time, the terms such as "upper", "first", "second", and "one" cited in this specification are only for the convenience of description, and are not intended to limit the scope of the present invention. Changes or adjustments in their relative relationships shall be considered to be the scope of the present invention without substantial changes in the technical content.
第2A至2D圖係為本發明之電子封裝件2之製法的剖面示意圖。 2A to 2D are schematic cross-sectional views of a method for manufacturing the electronic package 2 according to the present invention.
如第2A圖所示,提供一設於承載板9上之第一線路結構20,該第一線路結構20具有相對之第一側20a與第二側20b,且該第一線路結構20以其第二側20b結合至該承載板9上。接著,於該第一側20a上形成複數電性連接 該第一線路結構20之導電柱23,且設置電子元件21於該第一線路結構20之第一側20a上,其中,該電子元件21上係結合並電性連接複數導電體22,且該導電體22係為如導電線路、銲球之圓球狀、或如銅柱、銲錫凸塊等金屬材之柱狀、或銲線機製作之釘狀(stud),但不限於此。 As shown in FIG. 2A, a first circuit structure 20 is provided on the carrier board 9. The first circuit structure 20 has a first side 20a and a second side 20b opposite to each other. The second side 20b is bonded to the carrier plate 9. Next, a plurality of conductive pillars 23 electrically connected to the first circuit structure 20 are formed on the first side 20a, and an electronic component 21 is disposed on the first side 20a of the first circuit structure 20, wherein the electronic component 21 The upper body is connected and electrically connected to a plurality of electrical conductors 22, and the electrical conductors 22 are in the shape of a ball such as a conductive line, a solder ball, or a column shape of a metal material such as a copper pillar, a solder bump, or a wire bonding machine. A stud, but it is not limited to this.
於本實施例中,該第一線路結構20係包括至少一第一絕緣層200與設於該第一絕緣層200上之一第一線路重佈層(redistribution layer,簡稱RDL)201。例如,形成該第一線路重佈層201之材質係為銅,且形成該第一絕緣層200之材質係為如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等之介電材。 In this embodiment, the first circuit structure 20 includes at least a first insulating layer 200 and a first redistribution layer (RDL) 201 provided on the first insulating layer 200. For example, the material forming the first circuit redistribution layer 201 is copper, and the material forming the first insulating layer 200 is, for example, polybenzoxazole (PBO), polyimide (Polyimide, for short) PI), prepreg (PP), and other dielectric materials.
再者,該承載板9例如為半導體材質(如矽或玻璃)之圓形板體,其上以塗佈方式依序形成有一離型層90與一結合層91,以供該第一線路結構20設於該結合層91上。 Furthermore, the carrier plate 9 is, for example, a circular plate body made of semiconductor material (such as silicon or glass), and a release layer 90 and a bonding layer 91 are sequentially formed on the coating layer for the first circuit structure. 20 is provided on the bonding layer 91.
又,該導電柱23係設於該第一線路重佈層201上並電性連接該第一線路重佈層201,且形成該導電柱23之材質係為如銅之金屬材或銲錫材。 In addition, the conductive pillar 23 is disposed on the first circuit redistribution layer 201 and is electrically connected to the first circuit redistribution layer 201, and the material forming the conductive pillar 23 is a metal material such as copper or a solder material.
另外,該電子元件21係為主動元件、被動元件或其二者組合,且該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。例如,該電子元件21係為半導體晶片,其具有相對之作用面21a與非作用面21b,該電子元件21係以其非作用面21b藉由一結合層24黏固於該第一線路結構20之第一側20a上,而該作用面21a具有一 如鈍化材之保護膜211與外露出該保護膜211之複數電極墊210,且該導電體22形成於該電極墊210上並凸出該保護膜211。 In addition, the electronic element 21 is an active element, a passive element, or a combination of both, and the active element is, for example, a semiconductor wafer, and the passive element is, for example, a resistor, a capacitor, and an inductor. For example, the electronic component 21 is a semiconductor wafer having opposite active surfaces 21a and non-active surfaces 21b. The electronic component 21 is fixed to the first circuit structure 20 with a non-active surface 21b through a bonding layer 24. On the first side 20a, the active surface 21a has a protective film 211, such as a passivation material, and a plurality of electrode pads 210 exposing the protective film 211. The conductive body 22 is formed on the electrode pad 210 and protrudes therefrom. Protective film 211.
如第2B圖所示,形成一包覆層25於該第一線路結構20之第一側20a上,以令該包覆層25包覆該電子元件21、該些導電體22與該些導電柱23,再藉由整平製程,令該導電柱23之端面與該導電體22之端面外露於該包覆層25,使該包覆層25之表面齊平該導電柱23之端面與該導電體22之端面。 As shown in FIG. 2B, a cladding layer 25 is formed on the first side 20 a of the first circuit structure 20, so that the cladding layer 25 covers the electronic component 21, the conductive bodies 22 and the conductive layers. The pillar 23 is exposed to the cladding layer 25 by an end surface of the conductive pillar 23 and the end surface of the conductive body 22 through a leveling process, so that the surface of the cladding layer 25 is flush with the end surface of the conductive pillar 23 and the An end surface of the conductive body 22.
於本實施例中,該包覆層25係為絕緣材,如環氧樹脂之封裝膠體,其可用壓合(lamination)或模壓(molding)之方式形成於該第一線路結構20之第一側20a上。 In this embodiment, the covering layer 25 is an insulating material, such as an epoxy resin encapsulation gel, which can be formed on the first side of the first circuit structure 20 by lamination or molding. 20a.
再者,該整平製程係藉由研磨方式,移除該導電柱23之部分材質、該導電體22之部分材質與該包覆層25之部分材質。 Moreover, the leveling process removes a part of the material of the conductive pillar 23, a part of the material of the conductive body 22 and a part of the material of the cladding layer 25 by grinding.
如第2C圖所示,形成一第二線路結構26於該包覆層25上,且該第二線路結構26電性連接該些導電柱23與該導電體22。 As shown in FIG. 2C, a second circuit structure 26 is formed on the cladding layer 25, and the second circuit structure 26 is electrically connected to the conductive pillars 23 and the conductive body 22.
於本實施例中,該第二線路結構26係包括複數第二絕緣層260,260’、及設於該第二絕緣層260,260’上之複數第二線路重佈層(RDL)261,261’,且最外層之第二絕緣層260’可作為防銲層,以令最外層之第二線路重佈層261’外露於該防銲層。或者,該第二線路結構26亦可僅包括單一第二絕緣層260及單一第二線路重佈層261。 In this embodiment, the second circuit structure 26 includes a plurality of second insulation layers 260, 260 ', and a plurality of second circuit redistribution layers (RDL) 261, 261' provided on the second insulation layers 260, 260 ', and the outermost layer The second insulating layer 260 'can be used as a solder mask layer, so that the outermost second circuit redistribution layer 261' is exposed to the solder mask layer. Alternatively, the second circuit structure 26 may include only a single second insulating layer 260 and a single second circuit redistribution layer 261.
再者,形成該第二線路重佈層261,261’之材質係為銅,且形成該第二絕緣層260,260’之材質係為如聚對二唑苯(PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)之介電材。 Furthermore, the material for forming the second circuit redistribution layer 261, 261 'is copper, and the material for forming the second insulation layer 260, 260' is, for example, polyparadiazole benzene (PBO), polyimide (Polyimide, abbreviated as PI), dielectric material of prepreg (PP).
又,形成複數如銲球之導電元件27於最外層之第二線路重佈層261’上,俾供後續接置如封裝結構或其它結構(如另一封裝件或晶片)之電子裝置(圖略)。例如,可形成一凸塊底下金屬層(Under Bump Metallurgy,簡稱UBM)270於最外層之第二線路重佈層261’上,以利於結合該導電元件27。 In addition, a plurality of conductive elements 27, such as solder balls, are formed on the outermost second circuit redistribution layer 261 'for subsequent connection of an electronic device such as a package structure or other structure (such as another package or chip) (Fig. slightly). For example, an under-bump metallurgy (UBM) 270 may be formed on the outermost second circuit redistribution layer 261 'to facilitate the bonding of the conductive element 27.
如第2D圖所示,移除該承載板9及其上之離型層90與結合層91。之後,可形成複數如銲球之導電元件29於該第一線路結構20之第二側20b上,俾供後續接置如封裝結構或如另一封裝件或半導體晶片4之電子裝置。 As shown in FIG. 2D, the carrier plate 9 and the release layer 90 and the bonding layer 91 thereon are removed. After that, a plurality of conductive elements 29 such as solder balls can be formed on the second side 20 b of the first circuit structure 20 for subsequent mounting of electronic devices such as a package structure or another package or a semiconductor wafer 4.
於本實施例中,形成一如防銲層之絕緣保護層28於該第一線路結構20之第二側20b上,且形成複數開孔於該絕緣保護層28上,以令該第一線路重佈層201外露於該些開孔,俾供結合該些導電元件29。 In this embodiment, an insulation protection layer 28 such as a solder mask layer is formed on the second side 20b of the first circuit structure 20, and a plurality of openings are formed in the insulation protection layer 28 to make the first circuit The redistribution layer 201 is exposed from the openings, and is used to combine the conductive elements 29.
如第2D’圖所示,於另一實施例之電子封裝件2’中,在第2A圖之製程時,該電子元件21之作用面21a上係形成有至少一如鈍化層之絕緣層30與形成於該絕緣層30上並電性連接該電極墊210之線路層31,且該電子元件21以該線路層31結合並電性連接該些導電體22,而該保護膜211係形成於最外層之絕緣層30上,且使該導電體 22凸出該保護膜211。 As shown in FIG. 2D ′, in the electronic package 2 ′ of another embodiment, at the process of FIG. 2A, at least one insulating layer 30 such as a passivation layer is formed on the active surface 21 a of the electronic component 21. And the circuit layer 31 formed on the insulation layer 30 and electrically connected to the electrode pad 210, and the electronic component 21 is combined with the circuit layer 31 and electrically connected to the conductors 22, and the protective film 211 is formed on On the outermost insulating layer 30, the conductive body 22 protrudes from the protective film 211.
因此,本發明之電子封裝件2,2’之製法係藉由該導電體22凸出該保護膜211,以於整平製程時,只需移除(研磨)該金屬材(該導電體22與該導電柱23)及封裝材(該包覆層25)之部分材質,而無需移除(研磨)該保護膜211之部分材質,因而能減少研磨介面,故能增加研磨製程容許誤差範圍及減少成本。若如同習知技術,該導電體22被保護膜覆蓋,則需研磨保護膜的部分材質,因而會增加研磨介面,故會發生過磨及作業性不佳等問題。 Therefore, the manufacturing method of the electronic package 2, 2 'of the present invention is to protrude the protective film 211 by the conductive body 22, so that when the process is leveled, only the metal material (the conductive body 22) needs to be removed (ground) And part of the conductive pillar 23) and the packaging material (the cladding layer 25), without removing (grinding) part of the material of the protective film 211, so that the grinding interface can be reduced, and the tolerance range of the grinding process can be increased, and Reduce the cost. If the conductive body 22 is covered with a protective film as in the conventional technology, a part of the material of the protective film needs to be polished, and thus the polishing interface will be increased, and problems such as over-grinding and poor workability will occur.
再者,該第一與第二線路結構20,26之接觸墊(即該第一與第二線路重佈層201,261’外露於該絕緣保護層28與第二絕緣層260’)作為外接點,可利於控制各該接觸墊之間的距離,以符合細間距的需求,且能避免各該導電元件27,29之間發生橋接。 Furthermore, the contact pads of the first and second circuit structures 20 and 26 (that is, the first and second circuit redistribution layers 201 and 261 'are exposed from the insulation protection layer 28 and the second insulation layer 260') serve as external connection points. It is beneficial to control the distance between each of the contact pads to meet the requirement of fine pitch, and to avoid bridging between the conductive elements 27, 29.
又,該電子元件21之上、下側均形成有線路結構(即該第一與第二線路結構20,26),因而無需使用習知封裝基板,故可減少該電子封裝件2之厚度,並降低生產成本(即免用習知封裝基板)。 In addition, a circuit structure (ie, the first and second circuit structures 20, 26) is formed on the upper and lower sides of the electronic component 21, so that a conventional packaging substrate is not needed, so the thickness of the electronic package 2 can be reduced. And reduce production costs (that is, free of conventional packaging substrates).
本發明亦提供一種電子封裝件2,其包括:一第一線路結構20、一電子元件21、一包覆層25以及一第二線路結構26。 The present invention also provides an electronic package 2 including: a first circuit structure 20, an electronic component 21, a cladding layer 25, and a second circuit structure 26.
所述之第一線路結構20係具有相對之第一側20a與第二側20b,該第一側20a上形成有複數導電柱23,且該導電柱23電性連接該第一線路結構20。 The first circuit structure 20 has a first side 20a and a second side 20b opposite to each other. A plurality of conductive pillars 23 are formed on the first side 20a, and the conductive pillars 23 are electrically connected to the first circuit structure 20.
所述之電子元件21係設於該第一線路結構20之第一側20a上,且該電子元件21上係結合並電性連接複數導電體22。 The electronic component 21 is disposed on the first side 20 a of the first circuit structure 20, and the electronic component 21 is coupled to and electrically connected to the plurality of electrical conductors 22.
所述之包覆層25係形成於該第一線路結構20之第一側20a上,以令該包覆層25包覆該電子元件21、該導電體22與該些導電柱23,且令該導電柱23之端面與該導電體22之端面外露於該包覆層25。 The covering layer 25 is formed on the first side 20 a of the first circuit structure 20 so that the covering layer 25 covers the electronic component 21, the conductor 22 and the conductive pillars 23, and An end surface of the conductive pillar 23 and an end surface of the conductive body 22 are exposed from the cladding layer 25.
所述之第二線路結構26係形成於該包覆層25上,且該第二線路結構26電性連接該導電柱23與該導電體22。 The second circuit structure 26 is formed on the cladding layer 25, and the second circuit structure 26 is electrically connected to the conductive pillar 23 and the conductive body 22.
於一實施例中,該電子元件21係覆蓋有一保護膜211,且該導電體22凸出該保護膜211。 In one embodiment, the electronic component 21 is covered with a protective film 211, and the conductive body 22 protrudes from the protective film 211.
於一實施例中,該電子元件21係具有相對之作用面21a與非作用面21b,且該作用面21a結合並電性連接該些導電體22。 In one embodiment, the electronic component 21 has an opposite active surface 21 a and a non-active surface 21 b, and the active surface 21 a is combined with and electrically connected to the conductive bodies 22.
於一實施例中,該包覆層25之表面係齊平該導電柱23之端面與該導電體22之端面。 In one embodiment, the surface of the cladding layer 25 is flush with the end surface of the conductive pillar 23 and the end surface of the conductive body 22.
於一實施例中,該電子元件21係具有線路層31,以結合並電性連接該些導電體22。 In one embodiment, the electronic component 21 has a circuit layer 31 to bond and electrically connect the conductive bodies 22.
於一實施例中,該電子封裝件2復包括複數導電元件29,係形成於該第一線路結構20之第二側20b上。 In one embodiment, the electronic package 2 includes a plurality of conductive elements 29 formed on the second side 20 b of the first circuit structure 20.
於一實施例中,該電子封裝件2復包括複數導電元件27,係形成於該第二線路結構26上。 In one embodiment, the electronic package 2 includes a plurality of conductive elements 27 formed on the second circuit structure 26.
綜上所述,本發明之電子封裝件及其製法,係藉由該導電體凸出該保護膜,以減少研磨介面、增加研磨製程容 許誤差範圍及減少成本,且藉由該第一與第二線路結構之設計,不僅使封裝件的尺寸較小,且能增加外接點之數量,並當應用於細間距產品時,可避免各該導電元件之間發生橋接。 In summary, the electronic package and its manufacturing method of the present invention protrude the protective film through the conductor to reduce the grinding interface, increase the tolerance range of the grinding process and reduce the cost, and through the first and the first The design of the two-line structure not only makes the size of the package smaller, but also increases the number of external points, and when applied to fine-pitch products, bridges between the conductive elements can be avoided.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are used to exemplify the principle of the present invention and its effects, but not to limit the present invention. Anyone skilled in the art can modify the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.
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