TWI640151B - Negative voltage gate driven smart power module - Google Patents

Abstract

The invention discloses a smart power module capable of driving a negative voltage gate, which integrates a wide-gap semiconductor power unit, an adjusting unit and a driving unit, so that a voltage level of the driving unit can be adjusted by the adjusting unit According to the adjustment, the wide-gap semiconductor power unit has a driving voltage level alternately between positive and negative voltages in the driving state.

Description

Negative voltage gate driven smart power module

The invention relates to a power module for energy conversion, in particular to a smart power module capable of driving a negative voltage gate.

Intelligent Power Module (IPM) is a power switching component that integrates a transistor and its driver circuit. It has the advantages of high withstand voltage, high input impedance, high switching frequency, low driving power, etc. The power module has fault detection circuits such as undervoltage, overcurrent, short circuit and overheating, which can greatly improve the reliability of the system. At present, smart power modules are widely used in frequency conversion appliances, inverter power supplies, industrial control and other fields, with considerable economic benefits.

In view of this, many manufacturers have improved their structure or circuit design, from strengthening the integration of the components themselves, reducing the wiring, or reducing the complexity of assembly, etc., and hope that the performance can be improved and the size can be reduced. Meet the needs of consumers.

For example, in a PQFN semiconductor package disclosed in U.S. Patent No. 9,530,724 B2, a driver circuit is coupled to a lead frame and a plurality of vertical conduction power devices are coupled to the lead frame, and a plurality of a bonding wire, wherein at least one bonding wire is connected from a top surface of one of the plurality of vertical conduction power devices to a portion of the lead frame such that a portion of the wire frame is electrically connected to the plurality of vertical conduction power devices The electrodes on the bottom side, according to this, provide an efficient circuit interconnection in the PQFN package by a low cost lead frame.

In addition, the power semiconductor module disclosed in US Pat. No. 9,252,028 B2 incorporates a gate driving chip and a power module, including a first frame and a second frame, the first frame having a first surface opposite to each other and a a second surface, and an insulating gate bipolar transistor (IGBT) and a freewheeling diode (FWD) are disposed on the first surface; the second frame has a third surface and a fourth surface opposite to each other The surface includes a control circuit, a wire, and an insulator portion, and the control circuit is disposed on the third surface. Connecting the power semiconductor component and the control circuit through the wire, and packaging the power semiconductor component, the first frame, the control circuit, the second frame, and the wire with the insulator portion, so as to be aligned with the first frame In a direction perpendicular to the surface, the surface of the first frame is at the same height as the third surface of the second frame, and the structure improves the stability of the wire, thereby suppressing the wire breakage or short circuit of the wire, thereby obtaining better reliability. Power semiconductor module.

The main object of the present invention is to solve the conventional smart power module, especially when a silicon carbide wide-gap semiconductor power unit is used in the module, because the silicon carbide wide-gap semiconductor power unit interface has defects, resulting in The module has the disadvantage of being unstable with a positive bias threshold and a negative bias threshold.

Another object of the present invention is to solve the problem in the prior art that when a silicon carbide wide bandgap semiconductor power unit is used, a dedicated gate driver must be developed to match the wide bandgap semiconductor power unit to boost the smart power. The problem of manufacturing cost of the module.

In order to achieve the above object, the present invention provides a smart power module capable of driving a negative voltage gate, comprising: an upper bridge circuit, including a first driving unit, and a first electrically connected to the first driving unit a wide-gap semiconductor power unit having a first 汲 terminal, a first thyristor, and a first source terminal; a second driving unit, and a second wide-gap semiconductor power unit electrically connected to the second driving unit, the second wide-gap semiconductor power unit having a first wide-gap semiconductor power unit The first source terminal is electrically connected to the second drain terminal, the second gate terminal and the second source terminal; a first adjusting unit, the first adjusting unit includes a first electrically connected first driving unit a first Zener diode electrically coupled to the first resistor, the first Zener diode system and the first source terminal and the second wide energy of the first wide bandgap semiconductor power unit a first output node between the second drain terminal of the slot semiconductor power unit and a first high side of the first driving unit; and a second adjusting unit, the second adjusting unit includes a Electrically connecting the second resistor of the second driving unit and a second Zener diode, and the second Zener diode system and the second source terminal of the second wide-gap semiconductor power unit, respectively With the second drive unit It is electrically connected to the low side.

In an embodiment of the invention, the first adjusting unit is electrically connected to one of the high side ground end and the high side power end of the first driving chip, and the second adjusting unit is electrically connected to the second driving chip. One of the low side ground and one low side power end. More specifically, the cathode of the first Zener diode is electrically connected to the first output node, and the anode of the first Zener diode is electrically connected to the high side ground; the second Zener diode The anode of the body is electrically connected to a first ground end electrically connected to the second source terminal of the second wide-gap semiconductor power unit, and the anode of the second Zener diode is electrically connected to the low side ground end. Accordingly, the voltage levels of the first driving unit and the second driving unit are respectively adjusted by the first adjusting unit and the second adjusting unit to provide a displacement voltage, so that the first wide-gap semiconductor power unit is adjusted. And the second wide-gap semiconductor power unit has a gate driving voltage level of alternating positive and negative voltages in a driving state, so that the effect of the present invention compared to the prior art is:

(1) The smart power module of the present invention is a smart power module that can be driven by a negative voltage gate, so that the smart power module can be overcome, especially in the module. In the case of a wide-gap semiconductor power unit, there is a defect in the interface of the silicon carbide wide-gap semiconductor power unit, which causes the module to have a disadvantage of a positive bias threshold and a negative bias threshold. , thereby increasing the reliability of the smart power module.

(2) The smart power module of the present invention can be used together with a general insulated gate bipolar transistor driver (IGBT driver), without the need for a dedicated gate driver, which can greatly reduce the smart power mode. The manufacturing cost of the group is beneficial to industrial applications.

(3) The smart power module of the present invention is pin-to-pin compatible for external use of the smart power module because the components are integrated into a single package structure by means of internal connections. It has been widely used to replace other conventional smart power module products.

1‧‧‧Smart power module with negative voltage gate drive

10‧‧‧Upper bridge circuit

101a‧‧‧First drive unit

101b‧‧‧third drive unit

101c‧‧‧ fifth drive unit

1011a, 1011b, 1011c‧‧‧ high side power supply

1012a, 1012b, 1012c‧‧‧ high side ground

1013a‧‧‧High-side output control terminal

102a‧‧‧First wide-gap semiconductor power unit

102b‧‧‧ third wide-gap semiconductor power unit

102c‧‧‧5th wide-gap semiconductor power unit

1021a‧‧‧First source extreme

1021b‧‧‧ Third source extreme

1021c‧‧‧ Fifth source extreme

1022a‧‧‧First Extreme

1022b‧‧‧third extreme

1022c‧‧‧ fifth extreme

1023a‧‧‧The first gate extreme

1023b‧‧‧third gate extreme

1023c‧‧‧ Fifth Gate Extreme

103a‧‧‧First adjustment unit

103b‧‧‧ third adjustment unit

103c‧‧‧Fiscal adjustment unit

1031a‧‧‧First resistance

1031b‧‧‧ Third resistor

1031c‧‧‧ fifth resistor

1032a‧‧‧First Zener diode

1032b‧‧‧ Third Zener diode

1032c‧‧‧ Fifth Zener diode

104a‧‧‧first output node

104b‧‧‧second output node

104c‧‧‧ third output node

105a‧‧‧Carbide Flywheel Diode

105b‧‧‧ Built-in diode

20‧‧‧Bridge Circuit

201a‧‧‧Second drive unit

2011a, 2011b, 2011c‧‧‧ low side power supply

2012a, 2012b, 2012c‧‧‧ low side ground

2013a‧‧‧Low-side output control terminal

201b‧‧‧fourth drive unit

201c‧‧‧ sixth drive unit

202a‧‧‧Second wide-gap semiconductor power unit

202b‧‧‧4th wide-gap semiconductor power unit

202c‧‧‧6th wide-gap semiconductor power unit

2021a‧‧‧Second source extreme

2021b‧‧‧ fourth source extreme

2021c‧‧‧ sixth source extreme

2022a‧‧‧second extreme

2022b‧‧‧Fourth Extreme

2022c‧‧‧ sixth pole extreme

2023a‧‧‧second gate extreme

2023b‧‧‧fourth gate extreme

2023c‧‧‧ sixth gate extreme

203a‧‧‧Second adjustment unit

203b‧‧‧fourth adjustment unit

203c‧‧‧ sixth adjustment unit

2031a‧‧‧second resistance

2031b‧‧‧fourth resistor

2031c‧‧‧ sixth resistor

2032a‧‧‧Second Zener diode

2032b‧‧‧4th Zener diode

2032c‧‧‧ Sixth Zener diode

205a‧‧‧first ground

205b‧‧‧second ground

205c‧‧‧ third ground

30‧‧‧DC bus positive

FIG. 1A is a schematic diagram of a smart power module capable of driving a negative voltage gate according to an embodiment of the invention.

FIG. 1B is an enlarged schematic view of the first adjustment unit in FIG. 1A.

FIG. 1C is an enlarged schematic view of the second adjustment unit in FIG. 1A.

FIG. 2A is a schematic diagram of a smart power module capable of driving a negative voltage gate according to another embodiment of the present invention.

FIG. 2B is an enlarged schematic view of the third adjustment unit in FIG. 2A.

2C is an enlarged schematic view of the fourth adjustment unit in FIG. 2A.

FIG. 3A is a schematic diagram of a smart power module capable of driving a negative voltage gate according to still another embodiment of the present invention.

FIG. 3B is an enlarged schematic view of the fifth adjustment unit in FIG. 3A.

FIG. 3C is an enlarged schematic view of the sixth adjustment unit in FIG. 3A.

FIG. 4 is another aspect of a first wide bandgap semiconductor power cell in accordance with an embodiment of the present invention.

"Fig. 5A" is an experimental result of the influence of the positive and negative pressure alternating on the threshold stability of the driving voltage level in the driving state.

FIG. 5B is an experimental result in which the driving voltage level has an influence of the positive voltage and the negative voltage alternately on the threshold stability in the driving state.

The detailed description and technical content of the present invention will now be described with reference to the following drawings: FIG. 1A is a schematic diagram of a smart power module 1 capable of driving a negative voltage gate according to an embodiment of the present invention, which mainly includes an upper bridge circuit 10 And the next bridge circuit 20.

The upper bridge circuit 10 includes a first driving unit 101a and a first wide-gap semiconductor power unit 102a. The first wide-bandgap semiconductor power unit 102a has a first source terminal 1021a, a first threshold terminal 1022a, and a first gate terminal 1023a, and the first wide band gap semiconductor power unit 102a is electrically connected to a high side output control terminal 1013a of the first driving unit 101a through the first gate terminal 1023a, so that the first driving unit 101a The high and low control signals are output to the first gate terminal 1023a.

The lower bridge circuit 20 includes a second driving unit 201a and a second wide-gap semiconductor power unit 202a. The second wide-gap semiconductor power unit 202a is electrically connected to the second driving unit 201a, and has a a second drain terminal 2022a, a second gate terminal 2023a, and a second source terminal 2021a electrically coupled to the first source terminal 1021a of the first wide-gap semiconductor power unit 102a, wherein the second gate terminal is connected to the first A low side output control terminal 2013a of the second driving unit 201a.

A first adjusting unit 103a is disposed between the first driving unit 101a and the first wide gap semiconductor power unit 102a. a first output between the first adjustment unit 103a and the first source terminal 1021a of the first wide-gap semiconductor power unit 102a and the second drain terminal 2022a of the second wide-gap semiconductor power unit 202a The node 104a is electrically connected to a first high side of the first driving unit 101a. Further, the first high side includes a high side power The source 1011a and the high-side terminal 1012a, please refer to FIG. 1B. The first adjusting unit 103a includes a first resistor 1031a and a first Zener diode 1032a. The first Zener diode The anode of the first driving unit 101a is electrically connected to the high side ground 1012a of the first driving unit 101a, and the negative electrode is electrically connected to the first output node 104a; and one end of the first resistor 1031a is electrically connected to the first driving unit 101a. The high-side power supply terminal 1011a is electrically connected to the first output node 104a, whereby the potential between the high-side ground terminal 1012a and the first output node 104a is obtained by the first Zener The breakdown voltage of the pole body 1032a has a displacement voltage. The present invention can select different specifications of the Zener diode as the first Zener diode 1032a, and the displacement voltage can reach a range of about 5V~10V. Therefore, the gate drive can have a negative voltage drive effect on the source voltage (Vgs).

Returning to FIG. 1A, a second adjusting unit 203a is also disposed between the second driving unit 201a and the second wide-gap semiconductor power unit 202a. The second adjusting unit 203a is electrically connected to the first ground end 205a of the second source terminal 2021a and the first low level of the second driving unit 201a. Electrically connected, so that the smart power module of the present invention can be driven under negative pressure, and the principle thereof is as described above, and details are not described herein again.

The first low side includes a low side power terminal 2011a and a low side ground end 2012a. Please continue to refer to FIG. 1C. The second adjusting unit 203a includes a second resistor 2031a and a second Zener diode 2032a. The anode of the second Zener diode 2032a is electrically connected to the low side ground end 2012a of the second driving unit, and the negative electrode is electrically connected to the first ground end 205a; and one end of the second resistor 2031a The low side power terminal 2011a of the second driving unit 201a is electrically connected to the other end, and the other end is electrically connected to the first ground end 205a.

In the embodiment of the present invention, the first driving unit 101a, the first wide-gap semiconductor power unit 102a, and the first adjusting unit in the smart power module 1 of the negative-voltage gate driving The second driving unit 201a, the second wide-gap semiconductor power unit 202a, and the second adjusting unit 203a are preferably integrated in a single package structure and formed on a substrate; however, in other embodiments The above components may also be individually packaged as needed.

In this embodiment, the first driving unit 101a and the second driving unit 201a are respectively formed on two wafers. However, in other embodiments of the present invention, the first driving unit 101a and the second driving unit may also be used. The unit 201a is integrated in a single driving chip, and the present invention is not particularly limited thereto.

Please refer to FIG. 2A , which is a schematic diagram of a smart power module 1 capable of driving a negative voltage gate according to another embodiment of the present invention. In this embodiment, in addition to the components described in FIG. 1A, the upper bridge circuit 10 further includes a third driving unit 101b; a third wide gap semiconductor power unit 102b; and a third adjusting unit 103b. The lower bridge circuit 20 further includes a fourth driving unit 201b, a fourth wide gap semiconductor power unit 202b, and a fourth adjusting unit 203b.

In this embodiment, the third wide-gap semiconductor power unit 102b has a third source terminal 1021b, a third drain terminal 1022b, and a third gate terminal connected to a high-side output control terminal of the third driving unit 101b. The fourth wide-gap semiconductor power unit 202b also has a fourth source terminal 2021b, a fourth drain terminal 2022b, and a fourth gate terminal 2023b connected to a low-side output control terminal of the fourth driving unit 201b. The fourth drain terminal 2022b is electrically connected to the third source terminal 1021b of the third wide gap semiconductor power unit 102b.

In this embodiment, the third adjusting unit 103b is respectively associated with the third source terminal 1021b of the third wide-gap semiconductor power unit 102b and the fourth drain terminal 2022b of the fourth wide-gap semiconductor power unit 202b. a second output node 104b is electrically connected to a second high side of the third driving unit 101b; and the fourth adjusting unit 203b is respectively associated with the fourth wide gap semiconductor power unit 202b The four source terminal 2021b is electrically connected to a second low side of the fourth driving unit 201b.

In this embodiment, the first drain terminal 1022a of the first wide-gap semiconductor power unit 102a and the third drain terminal 1022b of the third wide-gap semiconductor power unit 102b are electrically connected to the bus bar positive electrode 30.

Continuing to refer to FIG. 2B, the second high side of the third driving unit 101b includes a high side power terminal 1011b and a high side ground terminal 1012b. The positive pole of a third Zener diode 1032b of the third adjusting unit 103b is electrically connected to the high side ground end 1012b, and the negative pole is electrically connected to the second output node 104b; and one of the third adjusting unit 103b One end of the third resistor 1031b is electrically connected to the high side power terminal 1011b, and the other end is electrically connected to the second output node 104b.

Please refer to FIG. 2C. The second low side of the fourth driving unit 201b includes a low side power terminal 2011b and a low side ground end 2012b. The anode of a fourth Zener diode 2032b of the fourth adjusting unit 203b is electrically connected to the low side ground end 2012b, and the anode is electrically connected to the fourth source of the fourth wide gap semiconductor power unit 202b. The second ground end 205b of the terminal 2021b is electrically connected; and one end of a fourth resistor 2031b of the fourth adjusting unit 203b is electrically connected to the low side power terminal 2011b of the fourth driving unit 201b, and the other end is connected thereto. The second ground end 205b is electrically connected.

Similarly, in this embodiment, the first driving unit 101a, the second driving unit 201a, the third driving unit 101b, and the fourth driving unit 201b are respectively formed on different wafers, however, in the present invention In other embodiments, the first driving unit 101a and the third driving unit 101b may be integrated into a single driving chip, and the second driving unit 201a and the fourth driving unit 201b may be integrated into another single driving chip. The first driving unit 101a, the second driving unit 201a, the third driving unit 101b, and the fourth driving unit 201b are integrated into the same driving wafer, and the present invention is not particularly limited.

The smart power module 1 capable of driving the negative voltage gate in another embodiment of the present invention, as shown in FIG. 3A, is a smart power module of a three-phase bridge topology. Except for the components of Figure 2A, In this embodiment, the upper bridge circuit 10 further includes a fifth driving unit 101c, a fifth wide gap semiconductor power unit 102c, and a fifth adjusting unit 103c. The lower bridge circuit 20 further includes a sixth driving unit 201c, a sixth wide gap semiconductor power unit 202c, and a sixth adjusting unit 203c.

In this embodiment, the fifth wide-gap semiconductor power unit 102c has a fifth source terminal 1021c, a fifth terminal 1022c, and a fifth gate terminal connected to a high-side output control terminal of the fifth driving unit 101c. The sixth wide-gap semiconductor power unit 202c also has a sixth source terminal 2021c, a sixth terminal 2022c, and a sixth gate terminal 2023c connected to a low-side output control terminal of the sixth driving unit 201c. The sixth drain terminal 2022c is electrically connected to the fifth source terminal 1021c of the fifth wide gap semiconductor power unit 102c.

In this embodiment, the fifth adjusting unit 103c is respectively connected to the fifth source terminal 1021c of the fifth wide-gap semiconductor power unit 102c and the sixth terminal electrode 2022c of the sixth wide-gap semiconductor power unit 202c. a third output node 104c is electrically connected to a third high side of the fifth driving unit 101c; and the sixth adjusting unit 203c is respectively electrically connected to the sixth wide gap semiconductor power unit 202c. The third ground end 205c of the sixth source terminal 2021c is electrically connected to a third low side of the sixth driving unit 201c.

Please refer to FIG. 2A and FIG. 3A. In this embodiment, the first 汲 terminal 1022a of the first wide-gap semiconductor power unit 102a and the third 汲 of the third wide-gap semiconductor power unit 102b. The terminal 1022b and the fifth drain terminal 1022c of the fifth wide-gap semiconductor power unit 102c are electrically connected to the DC bus positive terminal 30.

Continuing to refer to FIG. 3B, the third high side of the fifth driving unit 101c includes a high side power terminal 1011c and a high side ground terminal 1012c. The anode of a fifth Zener diode 1032c of the fifth adjusting unit 103c is electrically connected to the high side ground end 1012c, and the negative pole is electrically connected to the third output node 104c; and one of the fifth adjusting unit 103c One end of the fifth resistor 1031c is electrically connected The high side power terminal 1011c of the fifth driving unit 101c is electrically connected to the third output node 104c.

Please refer to FIG. 3C. The third low side of the fifth driving unit 101c includes a low side power terminal 2011c and a low side ground end 2012c. The anode of a sixth Zener diode 2032c of the sixth adjusting unit 203c is electrically connected to the low side ground end 2012c of the sixth driving unit, and the negative pole is electrically connected to the third ground end 205c; One end of a sixth resistor 2031c of the adjusting unit 203c is electrically connected to the low side power terminal 2011c, and the other end is electrically connected to the third ground terminal 205c.

Similarly, please refer to FIG. 1A, FIG. 2A, and FIG. 3A. In this embodiment, the first driving unit 101a, the second driving unit 201a, the third driving unit 101b, and the fourth The driving unit 201b, the fifth driving unit 101c, and the sixth driving unit 201c are respectively formed on different wafers. However, in other embodiments of the present invention, the first driving unit 101a and the second driving may be The unit 201a is integrated into a single driving chip, the third driving unit 101b and the fourth driving unit 201b are integrated into another single driving chip, and the fifth driving unit 101c and the sixth driving unit 201c are integrated into another single unit. Integrating the first driving unit 101a, the second driving unit 201a, the third driving unit 101b, the fourth driving unit 201b, the fifth driving unit 101c, and the sixth driving unit 201c The present invention is not particularly limited in the same drive wafer.

In the present invention, the wide bandgap semiconductor power cells 102a, 102b, 102c, 202a, 202b, and 202c may be identical to each other or differently selected from a metal oxide semiconductor field effect transistor (MOSFET), a junction field effect. A transistor (JFET), a high electron mobility transistor (HEMT), or an insulated gate bipolar transistor (IGBT). In the embodiment, the wide-bandgap semiconductor power units 102a, 102b, 102c, 202a, 202b, and 202c are all the tantalum metal oxides. The compound semiconductor field effect transistor (SiC MOSFET) is used to form an all-carbonized 矽 smart power module, which not only can effectively reduce the switching loss, but also generates less heat.

In an embodiment of the invention, in order to achieve lower power loss, the tantalum carbide metal oxide semiconductor field effect transistor may further include a tantalum carbide flywheel diode connected in parallel with the tantalum carbide metal oxide semiconductor field effect transistor. Body 105a (freewheeling diode, FWD), as shown in Figure 4. The turn-on voltage of the tantalum carbide flywheel diode 105a is lower than that of the built-in body diode 105b of the tantalum carbide metal oxide semiconductor field effect transistor (refer to FIG. 1). The turn-on voltage can turn on the current flowing back by the inductive load when the smart power module 1 driven by the negative voltage gate is operated, and can have lower power loss.

Accordingly, a voltage level of the driving units 101a, 101b, 101c, 201a, 201b, and 201c is adjusted by providing a displacement voltage by the adjusting units 103a, 103b, 103c, 203a, 203b, and 203c, respectively. The wide-gap semiconductor power cells 102a, 102b, 102c, 202a, 202b, and 202c each have a driving voltage level of a positive voltage and a negative voltage between 20V and -10V in a driving state.

Please continue to refer to "Fig. 5A" and "Fig. 5B" respectively. The experimental results show that the driving voltage level has no positive and negative pressure alternately and the positive and negative pressure alternately affect the threshold stability in the driving state. The driving voltage level of Figure 5A is between 0V and 20V. The threshold voltage (Vth) is unstable during operation. When the driving voltage level is between -5V and 20V, the operation is performed. The threshold voltage (Vth) is stable during the process, so the reliability of the smart power module can be increased.

Therefore, compared with the prior art, the smart power module of the present invention has the following features:

(1) The smart power module of the present invention is a smart power module that can be driven by a negative voltage gate, so that the power module for energy conversion can be overcome, especially the carbonized 矽 wide energy gap half. The conductor power unit has the disadvantage that its positive bias threshold and the negative bias threshold are unstable due to defects in the interface, thereby increasing the reliability of the smart power module.

(2) The smart power module of the present invention can be used with a general insulated gate bipolar transistor driver (IGBT driver). Since it does not need to be equipped with a dedicated gate driver, the manufacturing cost of the smart power module can be greatly reduced, which is advantageous for industrial applications.

(3) The smart power module of the present invention is pin-to-pin compatible for external use of the smart power module because the components are integrated into a single package structure by means of internal connections. It has been widely used to replace other smart power module products.

The present invention has been described in detail above, but the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. That is, the equivalent changes and modifications made by the scope of the present application should remain within the scope of the patent of the present invention.

Claims (12)

A smart power module capable of driving a negative voltage gate, comprising: an upper bridge circuit, comprising a first driving unit, and a first wide gap semiconductor power unit electrically connected to the first driving unit, the first A wide-gap semiconductor power unit has a first drain terminal, a first gate terminal, and a first source terminal; the lower bridge circuit includes a second driving unit and a second driving unit electrically connected to the second driving unit a second wide-gap semiconductor power unit having a second 汲 terminal and a second gate terminal electrically connected to the first source terminal of the first wide-gap semiconductor power unit And a second source terminal; the first adjusting unit includes a first resistor electrically connected to the first driving unit and a first Zener diode electrically connected to the first resistor a first output node between the first Zener diode system and the first source terminal of the first wide bandgap semiconductor power unit and the second drain terminal of the second wide bandgap semiconductor power unit And with a first high-side electrical connection of the first driving unit; and a second adjusting unit, the second adjusting unit includes a second resistor electrically connected to the second driving unit and a second Zener diode. And the second Zener diode system is electrically connected to the second source terminal of the second wide-gap semiconductor power unit and a first low side of the second driving unit, wherein the first driving The voltage level of the cell and the second driving unit are respectively adjusted by the first adjusting unit and the second adjusting unit to provide a displacement voltage, so that the first wide-gap semiconductor power unit and the second wide gap The semiconductor power unit has a driving voltage level alternately between positive and negative voltages in the driving state. The smart power module of claim 1, wherein the first wide-gap semiconductor power unit and the second wide-gap semiconductor power unit are each independently selected from a metal oxide A group of semiconductor field effect transistor (MOSFET), junction field effect transistor (JFET), high electron mobility transistor (HEMT), insulated gate bipolar transistor (IGBT), and combinations thereof. The smart power module of claim 1, wherein the first driving unit and the second driving unit are integrated into a single driving unit. The smart power module of claim 1, wherein the first adjusting unit is electrically connected to one of the high side ground and the high side power end of the first driving unit, and the second adjusting unit The system is electrically connected to one of the low side ground end and the low side power end of the second driving unit. The smart power module of claim 4, wherein the second wide-gap semiconductor power unit comprises a first ground terminal electrically connected to the second source terminal, the first Zener diode The anode is electrically connected to the first output node, and the anode of the first Zener diode is electrically connected to the high side ground; the cathode of the second Zener diode is electrically connected to the first ground And a positive electrode of the second Zener diode is electrically connected to the low side ground. The smart power module of claim 1, wherein the upper bridge circuit further comprises: a third driving unit; and a third wide gap semiconductor power unit electrically connected to the third driving unit, the first The triple wide bandgap semiconductor power unit has a third source terminal and a third drain terminal electrically coupled to the third source terminal; and a third source terminal of the third wide bandgap semiconductor power unit and a third adjusting unit electrically connected to the third driving unit, the third adjusting unit includes a third resistor electrically connected to the third driving unit and a third Zener diode electrically connected to the third resistor And the lower bridge circuit further includes: a fourth driving unit; a fourth wide-gap semiconductor power unit electrically connected to the fourth driving unit, the fourth wide-gap semiconductor power unit having a fourth source terminal And a fourth drain terminal electrically coupled to the fourth source terminal and the third source terminal of the third wide bandgap semiconductor power unit; and a first and the fourth wide bandgap semiconductor power unit Four sources Extreme and the fourth drive list a fourth adjusting unit electrically connected to the fourth adjusting unit, comprising: a fourth resistor electrically connected to the fourth driving unit and a fourth Zener diode electrically connected to the fourth resistor; wherein The first drain terminal of the first wide bandgap semiconductor power unit and the third drain terminal of the third wide gap semiconductor power unit are electrically connected to the bus bar anode. The smart power module of claim 6, wherein the upper bridge circuit further comprises: a fifth driving unit; and a fifth wide gap semiconductor power unit electrically connected to the fifth driving unit, the first The five wide bandgap semiconductor power unit has a fifth source terminal and a fifth drain terminal electrically connected to the fifth source terminal; and a fifth source terminal of the fifth wide bandgap semiconductor power unit and a fifth adjusting unit electrically connected to the fifth driving unit, the fifth adjusting unit includes a fifth resistor electrically connected to the fifth driving unit and a fifth Zener diode electrically connected to the fifth resistor And the second bridge circuit further includes: a sixth driving unit; a sixth wide-gap semiconductor power unit electrically connected to the sixth driving unit, the sixth wide-gap semiconductor power unit having a sixth source terminal And a sixth drain terminal electrically coupled to the sixth source terminal and the fifth source terminal of the fifth wide bandgap semiconductor power unit, respectively; and a first and the sixth wide bandgap semiconductor power unit Six sources And a sixth adjusting unit electrically connected to the sixth driving unit, the sixth adjusting unit includes a sixth resistor electrically connected to the sixth driving unit and a sixth Zener two electrically connected to the sixth resistor The third body of the third wide-gap semiconductor power unit and the fifth terminal of the fifth wide-gap semiconductor power unit are electrically connected to the DC bus positive terminal. The smart power module of claim 1, wherein the first wide-gap semiconductor power unit and the second wide-gap semiconductor power unit are each a niobium metal oxide semiconductor field effect transistor ( SiC MOSFET). The smart power module of claim 8, wherein the tantalum carbide metal oxide semiconductor field effect transistor further comprises a flywheel diode connected in parallel with the tantalum carbide metal oxide semiconductor field effect transistor. (freewheeling diode, FWD). The smart power module of claim 1, wherein the first driving unit, the first wide-gap semiconductor power unit, the first adjusting unit, the second driving unit, and the second wide energy The slot semiconductor power unit and the second adjustment unit are integrated into a single package structure. The smart power module of claim 1, wherein the first wide-gap semiconductor power unit is connected to the first driving unit by the first gate terminal; and the second wide-gap semiconductor power unit The second driving unit is connected to the second gate terminal. The smart power module of claim 1, wherein the driving voltage level alternated between the positive pressure and the negative voltage is between 20V and -10V.