TWI623116B - Light-Emitting Device - Google Patents

Abstract

A light-emitting element comprising: a support substrate comprising a first surface and a second surface opposite to the first surface; a flip-chip light emitting diode bonded to the first surface, comprising a first bonding pad, a first a bonding pad and a third bonding pad; a conductive path and a heat conducting channel electrically insulated from each other, extending from the first surface to the second surface in the supporting substrate; and a conductive pad and a thermal pad on the second surface And connecting to the conductive channel and the heat conducting channel respectively; wherein one of the first bonding pad and the second bonding pad is connected to the conductive channel, and the third bonding pad is connected to the heat conducting channel.

Description

Light-emitting element

The present invention relates to a light-emitting element, and more particularly to a flip-chip type light-emitting diode element.

Light-Emitting Diode (LED) is a solid-state semiconductor light-emitting device, which has the advantages of low power consumption, low heat energy, long working life, small volume, fast response speed and good photoelectric characteristics, such as stable The wavelength of the light. Therefore, the light-emitting diodes are widely used in household appliances, equipment indicator lights, and optoelectronic products.

A light-emitting element comprising: a support substrate comprising a first surface and a second surface opposite to the first surface; a flip-chip light emitting diode bonded to the first surface, comprising a first bonding pad, a first a bonding pad and a third bonding pad; a conductive path and a heat conducting channel electrically insulated from each other, extending from the first surface to the second surface in the supporting substrate; and a conductive pad and a thermal pad on the second surface And connecting to the conductive channel and the heat conducting channel respectively; wherein one of the first bonding pad and the second bonding pad is connected to the conductive channel, and the third bonding pad is connected to the heat conducting channel.

A light-emitting element comprising: a support substrate comprising a first surface and a second surface opposite to the first surface; a flip-chip light emitting diode bonded to the first surface, comprising a first bonding pad, a first a bonding pad and a third bonding pad; a heat conducting channel extending from the first surface to the second surface in the supporting substrate; and a thermal pad on the second surface connected to the heat conducting channel; wherein the third bonding pad is The first bonding pad and the second bonding pad are electrically insulated, and the third bonding pad is connected to the heat conduction channel.

The embodiments of the present application will be described in detail, and in the drawings, the same or the like

FIG. 1A is a front elevational view of a light emitting diode 10 according to an embodiment of the present application. 1B is a cross-sectional view of a light-emitting element 1 disclosed in accordance with an embodiment of the present application. As shown in FIG. 1B, the light-emitting element 1 includes the light-emitting diode 10 as shown in FIG. 1A and is flip-chip bonded to the first surface 101 of a support substrate 100, that is, the light-emitting diode 10 The front surface faces the first surface 101 of the support substrate 100, and the light-emitting diode 10 is a flip-chip light-emitting diode. The cross section of the light emitting diode 10 shown in Fig. 1B is a section along the line A-A' in Fig. 1A.

The light emitting diode 10 has a semiconductor layer 20 including a first semiconductor layer 201 and a second semiconductor layer 202, and an active layer 203 is disposed between the first semiconductor layer 201 and the second semiconductor layer 202. The first semiconductor layer 201 and the second semiconductor 202 layer have different electrical, electrical, polar or dopants to provide holes and electrons, respectively. The polarity can be either n-type or p-type such that electrons and holes can be combined in the active layer to produce light. For example, the first semiconductor layer 201 may be an n-type semiconductor layer, and the second semiconductor layer 202 may be a p-type semiconductor layer. The wavelength of the light emitted by the light-emitting diode 10 is adjusted by changing the composition of one or more layers in the semiconductor laminate 20. The material of the semiconductor stack 20 comprises a III-V semiconductor material, such as Al _x In _y Ga _(1-xy) N or Al _x In _y Ga _(1-xy) P, where 0 ≦ x, y ≦ 1; (x +y)≦1. According to the material of the active layer, when the semiconductor laminate is AlInGaP series material, red light with a wavelength between 610 nm and 650 nm and green light with a wavelength between 530 nm and 570 nm can be emitted as a semiconductor stack. When the layer 20 material is InGaN series material, it can emit blue light with wavelength between 450 nm and 490 nm, or when the semiconductor laminate 20 material is AlGaN or AlGaInN series materials, it can emit wavelengths between 400 nm and 250 nm. Between the ultraviolet light. The active layer 203 may be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well structure. MQW). The active layer material can be a neutral, p-type or n-type electrical semiconductor. As shown in FIG. 1B, in the present embodiment, the light-emitting diode 10 can have a roughened structure on the surface of the first semiconductor layer 201 with respect to the support substrate 100, which can increase the scattering of light and the luminous efficiency. In another embodiment, a surface of the light-emitting diode 10 relative to the support substrate 100 may have a growth substrate (not shown).

In the semiconductor stack 20, a portion of the second semiconductor layer 202 and the active layer 203 are removed to expose sidewalls of the first semiconductor layer 201 and the second semiconductor layer 202 and the active layer 203 to form a plurality of exposed regions. The exposed region includes a plurality of first exposed regions 30a located inside the semiconductor laminate 20, and a second exposed region 30b located at an edge of the semiconductor laminate 10. In this embodiment, in addition to the removal of the second semiconductor layer 202 and the active layer 203 of the partial region, a portion of the first semiconductor layer 201 is further removed, wherein the first semiconductor layer 201, the second semiconductor layer 202, and The sidewalls of the active layer 203 form a plurality of sidewalls of the first exposed region 30a and the second exposed region 30b; the exposed surface of the first semiconductor layer 201 constitutes a bottom surface of the first exposed region 30a and the second exposed region 30b; The exposed area 30a may be a plurality of holes or strip-shaped grooves. In this embodiment, the plurality of first exposed areas 30a are a plurality of holes, wherein the arrangement, the number and the size of the holes may be different according to the current distribution requirements. the design of. A current dispersion layer 18 is located on the surface of the second semiconductor layer 202 and is in electrical contact with the second semiconductor layer 202. The current dispersion layer 18 may be a metal or a transparent conductive material, wherein the metal may be selected from a thin metal having light transmissivity. The transparent conductive material comprises a material such as indium tin oxide (ITO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), or indium zinc oxide (IZO). A reflective structure 16 is formed on the current dispersion layer 18 by evaporation or deposition. The reflective structure 16 may be composed of a reflective layer (not shown) and/or a barrier layer (not shown), wherein the reflective layer Located between the current dispersion layer 18 and the barrier layer (not shown). In the embodiment of the present application, in the upper view of the light emitting diode 10, the outer edge of the reflective layer may be disposed on the inner side or the outer side of the outer edge of the current dispersion layer 18, or coincide with the outer edge of the current dispersion layer 18, and is blocked. The outer edge of the barrier layer may be disposed on the inner side, the outer side of the outer edge of the reflective layer, or disposed to coincide with the outer edge of the reflective layer. In another embodiment of the present application, the current spreading layer 18 may be omitted, and the reflective structure 16 is directly formed on the second semiconductor layer 202.

The reflective layer can be one or more layers of structure, such as a Bragg reflection (DBR) structure. The material of the reflective layer contains a metal material having a high reflectance, such as a metal such as silver (Ag), aluminum (Al), or rhodium (Rh) or an alloy of the above materials. The higher reflectance as used herein means a reflectance of 80% or more for the wavelength of the light emitted from the light-emitting diode 10. In an embodiment of the present application, the barrier layer covers the reflective layer to prevent oxidation of the surface of the reflective layer to deteriorate the reflectivity of the reflective layer. The material of the barrier layer comprises a metal material such as a metal such as titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt) or the like. alloy. The barrier layer may be one or more layers, such as titanium (Ti) / aluminum (Al), and / or titanium (Ti) / tungsten (W).

A first insulating layer 40 covers the surface of the semiconductor stack 20, the sidewalls of the plurality of first exposed regions 30a and the sidewalls of the second exposed regions 30b, and has a first group of first insulating layer openings 401 to expose the first exposure A first semiconductor layer 201 within region 30a, and a second group of first insulating layer openings 402 to expose reflective structure 16. The partially enlarged view of the one-dot chain coil in Fig. 1B shows the structure in the vicinity of the first insulating layer opening 402 of the second group. The shapes of the first insulating layer openings 401 and 402 of the first group and the second group include a circle, an ellipse, a rectangle, a polygon, a ring, or an arbitrary shape. In the embodiment, the first insulating layer 40 may be a single layer or a plurality of layers. When the first insulating layer 40 is a single layer film, the first insulating layer 40 can protect the sidewalls of the semiconductor stack 20 to prevent the active layer 203 from being damaged by subsequent processes, and to avoid short circuits when the components are operated. When the first insulating layer 40 is a multilayer film, the first insulating layer 40 may comprise two or more materials having different refractive indices alternately stacked to form a Bragg mirror (DBR) structure to selectively reflect light of a specific wavelength. . In one embodiment, the first insulating layer 40 is formed of a non-conductive material, and includes an organic material such as Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), and epoxy resin (Epoxy). Acrylic Resin, cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyether quinone (Polyetherimide), Fluorocarbon Polymer, or inorganic materials such as Silicone, Glass, or dielectric materials such as alumina (Al ₂ O ₃ ), tantalum nitride (SiN) _x ), cerium oxide (SiO _x ), titanium oxide (TiO _x ), or magnesium fluoride (MgF _x ).

A contact layer 50 is located on the first insulating layer 40, and fills the first group of first insulating layer openings 401 to contact the first semiconductor layer 201 in the first exposed region 30a, and transmits through the first insulating layer 40 and The second semiconductor layer 202 is electrically insulated. The contact layer 50 has a contact layer opening 501 corresponding to the first insulating layer opening 402 of the second group. In an embodiment of the present application, the contact layer 50 may cover the first insulating layer 40 on the sidewall of the second exposed region 30b and extend to contact the bottom surface of the second exposed region 30b formed by the surface of the first semiconductor layer 201. In this way, the contact area of the contact layer 50 and the first semiconductor layer 201 includes the bottom surface area of the second exposed area 30b surrounding the plurality of first exposed areas 30a, in addition to the bottom surface area of the plurality of first exposed areas 30a. Increase current spreading and get a lower forward voltage. In another embodiment of the present application, the light emitting diode does not have the first exposed region 30a, only the second exposed region 30b of the peripheral edge of the semiconductor laminate 10. The contact layer 50 is in contact with the first semiconductor layer 201 only by the second exposed region 30b. The contact layer 50 may be one or more layers. In order to reduce the electrical resistance in contact with the first semiconductor layer 201, the material of the contact layer 50 comprises a metal material such as chromium (Cr), titanium (Ti), tungsten (W), gold. A metal such as (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), or platinum (Pt) or an alloy of the above materials. In one embodiment of the present application, the material of the contact layer 50 preferably comprises a metal having high reflectivity, such as aluminum (Al), platinum (Pt). In one embodiment of the present application, the contact layer 50 is a multi-layered structure, and the material on the side in contact with the first semiconductor layer 201 preferably contains chromium (Cr) or titanium (Ti) to increase it and the first semiconductor layer 201. Joint strength.

A second insulating layer 60 is formed on the contact layer 50, having a first group of second insulating layer openings 601 to expose the contact layer 50, and corresponding to the second group of first insulating layer openings 402 and contact layer openings 501. a second insulating layer opening 602 having a second group to expose the reflective structure 16, wherein the contact layer 50 on the second semiconductor layer 202 is sandwiched between the first insulating layer 40 and the second insulating layer 60 The second insulating layer opening 601 of the first group and the opening of the first insulating layer opening 401 of the first group may be staggered without overlapping each other. In this way, the current injected from the second insulating layer opening 601 of the first group may be diffused first in the contact layer 50 and then injected into the first semiconductor layer 201 via the first insulating layer opening 401 of the first group. Inside. Similarly, the shapes of the second insulating layer openings 601 and 602 of the first group and the second group include a circle, an ellipse, a rectangle, a polygon, a ring, or an arbitrary shape. In the embodiment, the second insulating layer 60 may be a single layer or a multilayer structure. When the second insulating layer 60 is a single layer film, the second insulating layer 60 can protect the sidewalls of the semiconductor stack 20 from being damaged by subsequent processes and avoiding electrical shorts. When the second insulating layer 60 is a multilayer film, the second insulating layer 60 may comprise two or more materials having different refractive indices alternately stacked to form a Bragg mirror (DBR) structure to selectively reflect light of a specific wavelength. . The second insulating layer 60 is formed of a non-conductive material, and includes an organic material such as Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin (Epoxy), and acrylic resin (Acrylic Resin). ), cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide (Polyetherimide), fluorocarbon Fluorocarbon Polymer, or an inorganic material such as Silicone, Glass, or a dielectric material such as alumina (Al ₂ O ₃ ), tantalum nitride (SiN _x ), or antimony oxide ( SiO _x ), titanium oxide (TiO _x ), or magnesium fluoride (MgF _x ).

The light-emitting diode 10 has a first bonding pad 110a, a second bonding pad 110b, and a third bonding pad 110c respectively disposed on the second insulating layer 60, which are spatially separated from each other. In the embodiment of the present application, the third bonding pad 110c is located between the first bonding pad 110a and the second bonding pad 110b. There is a gap between the third bonding pad 110c and the first bonding pad 110a, and between the third bonding pad 110c and the second bonding pad 110b. The second insulating layer opening 601 of the first group of the first bonding pads 110a filled in the second insulating layer 60 is connected to the contact layer 50, and is electrically connected to the first semiconductor layer 201. The second bonding pad 110b of the second bonding pad 110b is filled in the second insulating layer 60 of the second insulating layer 60, and the second bonding pad 110b is electrically connected to the second semiconductor layer 202. The third bonding pad 110c is electrically insulated from the first bonding pad 110a and the second bonding pad 110b. The first bonding pad 110a, the second bonding pad 110b, and the third bonding pad 110c may have the same material or different materials. For example, the materials of the first bonding pad 110a, the second bonding pad 110b, and the third bonding pad 110c may be selected from gold. (Au), copper (Cu), chromium (Cr), nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os) or a single layer of the above materials, Alloy or multilayer film.

The support substrate 100 has a first surface 101 and a second surface 102 opposite to the first surface 101. The first surface 101 is bonded to the LED assembly 10. An insulating bonding material 80 is disposed on the support substrate 100 and the LED assembly 10. between. In the present embodiment, the support substrate 100 is a non-conductive material, including but not limited to aluminum nitride (AlN), diamond, sapphire, glass, ceramic, and polymer matrix composite (PMC). The first surface 101 is provided with a first contact pad 120a, a second contact pad 120b, and a third contact pad 130 respectively located on the first bonding pad 110a and the third bonding pad 110c and the first electrode relative to the LED body 10. The position of the two bonding pads 110b. In one embodiment, the surfaces of the first contact pad 120a, the second contact pad 120b, and the third contact pad 130 may respectively have a plurality of metal bumps 32, and the plurality of metal bumps 32 pass through the insulating bonding material 80 therebetween. Contact with the corresponding bonding pad and achieve bonding. In one embodiment of the present application, the surfaces of the first bonding pad 110a, the third bonding pad 110c, and the second bonding pad 110b may respectively have a plurality of metal bumps, and have a plurality of metal bumps 32 therethrough. The insulating bonding material 80 contacts and contacts the corresponding contact pads. In addition, the insulating bonding material 80 is also disposed between the adjacent bonding pads 110a-110c, and between the adjacent first contact pads 120a, the second contact pads 120b and the third contact pads 130, thereby ensuring The insulation between the bonding pads 110a-110c and the first contact pads 120a, the second contact pads 120b and the third contact pads 130 prevents the light-emitting diodes 10 from being short-circuited. The insulating bonding material 80 comprises an organic material such as Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cycloolefin polymer (COC). , polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer (Fluorocarbon Polymer), or Inorganic materials such as Silicone, Glass, or dielectric materials such as alumina (Al2O3), tantalum nitride (SiNx), yttrium oxide (SiOx), titanium oxide (TiOx), or magnesium fluoride (MgFx) and so on. The third contact pad 130 has a first region 130a directly contacting the second bonding pad 110b of the LED body 10. That is, in the upper view, the first region 130a of the third contact pad 130 is located in the LED body 10. The third contact pad 130 has a second region 130b extending from the first region 130a to the projected area of the light-emitting diode 10, and the second region 130b is in the projected area. In the subsequent process, the wire bonding area can be used for external bonding, and a wire bonding point (not shown) is disposed on the second region 130b. The present invention is not limited to the external bonding method by wire bonding, and other conventional external bonding methods can also be used as an embodiment of the present application, for example, the yellow light developing process wiring is externally connected.

Each of the support substrate 100 under the first contact pad 120a and the second contact pad 120b has a first group through hole 36a and a second group through hole 36b extending through the support substrate 100. The aperture 36a and the second group of vias 36b extend from the first surface 101 to the second surface 102. The first group of through holes 36a are filled with a conductive material, and the second group of through holes 36b are filled with a heat conductive material, which may also be an insulating and heat conductive material, so that the first group of through holes 36a and the second group of through holes 36b respectively form a conductive Conduction and heat conduction channels. The shape of the first group of through holes 36a and the second group of through holes 36b may be circular, rectangular, circular or other shapes as viewed from above. The number of the first group of through holes 36a and the second group of through holes 36b may be single or multiple, and the configuration and distribution may be according to the arrangement of the first bonding pads 110a, the third bonding pads 110c, and the purpose of heat conduction and conduction. There are different designs.

The second surface 102 is provided with a conductive pad 200 and a thermal pad 300 respectively connected to the first group through hole 36a and the second group through hole 36b. The conductive pad 200 is electrically connected to the first semiconductor layer 201 of the light emitting diode 10 by the first group via hole 36a, the first contact pad 120a, and the first bonding pad 110a. As a result, the first semiconductor layer 201 and the second semiconductor layer 202 of the LED 10 can be electrically connected to the external power source or the electronic component through the conductive pad 200 and the third contact pad 130, respectively. The heat generated by the LEDs 10 can be conducted to the outside of the light-emitting element 1 by the third bonding pads 110c, the second contact pads 120b, the second group vias 36b, and the thermal pad 300, thereby increasing the heat dissipation effect of the light-emitting elements 1. . As shown in FIG. 1C , in another embodiment of the present application, the second surface 102 of the support substrate 100 can be bonded to a heat dissipation substrate 66 , and the heat dissipation substrate 66 can include a metal material on the interface surface of the support substrate 100 . A third insulating layer 62, a metal layer 64a are disposed on the third insulating layer 62, and another metal layer 64b is disposed directly on the heat dissipation substrate 66. The conductive pad 200 is bonded to the metal layer 64a, and the thermal pad 300 is bonded to the metal layer 64b. In another embodiment, the metal layer 64b can be replaced with a thermally conductive adhesive. In another embodiment, the first wire bonding point 56a may be formed on the metal layer 64a during the wire bonding process, and the second wire bonding point 56b may be disposed on the third contact pad 130.

Fig. 2 is a cross-sectional view showing an embodiment of a light-emitting element 2 according to the present application. As shown in FIG. 2, the light-emitting element 2 includes the light-emitting diode 10 bonded to the first surface 101 of a support substrate 100 in a flip-chip manner. The structure of the light-emitting diode 10 and the support substrate 100 in this embodiment is the same as that of the first embodiment, and therefore will not be described again. The difference between this embodiment and the foregoing embodiment is the manner in which the LEDs 10 and the support substrate 100 are bonded. As shown in FIG. 2, the first contact pads 120a are bonded to the second bonding pads 110b of the LEDs 10. The two contact pads 120b are bonded to the third bonding pads 110c of the LEDs 10, and the third contact pads 130 are bonded to the first bonding pads 110a of the LEDs 10. The conductive pad 200 is electrically connected to the second semiconductor layer 202 of the LED 10 by the first group via 36a, the first contact pad 120a and the second bonding pad 110b; the third contact pad 130 is connected via the first bonding The pad 110a is electrically connected to the first semiconductor layer 201. As a result, the first semiconductor layer 201 and the second semiconductor layer 202 of the LED 10 can be connected to the external power source or electronic component through the third contact pad 130 and the conductive pad 200, respectively. The heat generated by the LEDs 10 can be transmitted to the outside of the light-emitting element 2 through the third bonding pads 110c, the second contact pads 120b, the second group vias 36b, and the thermal pad 300, thereby increasing the heat dissipation effect of the light-emitting elements 2. . Similarly, in another embodiment of the present application, the conductive pad 200 of the light-emitting element 2 and the thermal pad 300 can be bonded to a heat-dissipating substrate (not shown).

It can be seen from the light-emitting element 1 of FIG. 1B and the light-emitting element 2 of FIG. 2 that one of the first bonding pad 110a and the second bonding pad 110b can be connected to the first group of the supporting substrate 100 via the first contact pad 120a. The hole 30a (ie, the conductive path), the third bonding pad 110c is connected to the second group through hole 30b (ie, the heat conduction channel) of the support substrate 100 via the second contact pad 120b, the first bonding pad 110a and the second bonding pad 110b The other is joined to the third contact pad 130 of the support substrate 100. Because the third bonding pad 110c is electrically insulated from the first semiconductor layer 201 and the second semiconductor layer 202, the first semiconductor layer 201 and the second semiconductor layer 202 are respectively connected to the external power supply by the conductive pad 200 and the third contact pad 130. Or the external electronic component is connected, the thermal pad 300 and the conductive pad 200, and the thermal pad 300 and the third contact pad 130 are electrically insulated, so no additional arrangement is needed on the bonding surface of the thermal pad 300 and the heat dissipation substrate 66. The insulating structure makes the heat dissipation path more direct and simplifies the circuit design of the heat dissipation substrate. In addition, since the third contact pad 130 is disposed on the first surface 101, in addition to the disposed area of the conductive pad 200 on the second surface 102, there is more area on which the thermal pad 300 can be formed to increase the heat dissipation area.

In the above embodiment, the first bonding pad 110a, the second bonding pad 110b, and the third bonding pad 110c are polygonal or rectangular. However, the area, shape, and arrangement of the bonding pads are not limited thereto. For example, each of the bonding pads may also have an arc shape. In an embodiment of the present application, the area of the thermal pad 300 may be larger than the area of the conductive pad 200. In another embodiment of the present application, the area of the thermal pad 300 may be larger than the second contact pad 120b and the third contact pad 130. In another embodiment of the present application, in a top view, the projected area of the thermal pad 300 overlaps the projected area of the second contact pad 120b and/or the projected area of the third contact pad 130.

Fig. 3A is a cross-sectional view showing an embodiment of a light-emitting element 3 according to the present application. As shown in Fig. 3A, the light-emitting element 3 includes a light-emitting diode 10 bonded to the first surface 101 of a support substrate 100' in a flip-chip manner, and the support substrate 100' may be a non-conductive material. The structure of the light-emitting diode 10 in this embodiment is the same as that of the foregoing embodiment, and therefore will not be described again. The difference between the embodiment and the foregoing embodiment is that the first surface 101 of the support substrate 100' is provided with a first contact pad 140a, a second contact pad 140b, and a third contact pad 120. The first contact pad 140a is bonded to the first bonding pad 110a, the second contact pad 140b is bonded to the second bonding pad 110b, and the third contact pad 120 is bonded to the third bonding pad 110c. The support substrate 100' under the third contact pad 120 has a through hole 36' which is filled with a heat conductive material and is connected to the thermal pad 300 of the second surface 102 of the support substrate 100'. Similar to the first embodiment, the first contact pad 140a and the second contact pad 140b have an area outside the projection range of the light-emitting diode 10, and this area can be used for wire bonding in a subsequent process, for example, a wire-bonding point (Fig. The first semiconductor layer 201 and the second semiconductor layer 202 of the LED 10 can be connected to an external power source or electronic component through the first contact pad 140a and the second contact pad 140b, respectively. As a result, no additional conductive pads are required on the second surface 102 of the support substrate 100', and the thermal pad 300 can cover the entire second surface 102 to increase the heat dissipation area.

In another embodiment of the present application, the light-emitting element 3 of FIG. 3A can be bonded to the heat dissipation substrate 66 as shown in FIG. 3B. The heat dissipation substrate 66 may include a metal material having a metal layer 64 disposed directly on the heat dissipation substrate 66 on the bonding surface of the support substrate 100', and the thermal pad 300 is bonded to the metal layer 64. In another embodiment, the metal layer 64b can be replaced with a thermally conductive adhesive. In another embodiment, the first wire bonding point 56a may be formed on the first contact pad 140a during the wire bonding process, and the second wire bonding point is formed on the second contact pad 140b. As described in the previous embodiment, the third bonding pad 110c and the first and second bonding pads 110a and 110b are electrically insulated, and thus the thermal pad 300 and the LED 10 are also electrically insulated. When the light-emitting element 3 is bonded to the heat-dissipating substrate 66, the bonding surface between the two does not need to be provided with another insulating structure, and the heat generated by the light-emitting element 3 can be directly transmitted to the heat-dissipating substrate by the metal layer 64 (or the thermal conductive adhesive). 66. In addition, the surface of the heat dissipation substrate 66 does not need to be provided with other circuit connection structures. Therefore, it is not necessary to consider the alignment accuracy between the light-emitting element 3 and the heat dissipation substrate 66 when bonding, and the structure of the heat dissipation substrate 66 can be simplified and the process can be simplified.

However, the above embodiments are merely illustrative of the principles and effects of the present application, and are not intended to limit the present application. Modifications and variations of the above-described embodiments can be made without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present application is as set forth in the scope of the patent application described below.

1, 2, 3‧‧‧Lighting elements

10‧‧‧Lighting diode

100,100'‧‧‧Support substrate

101‧‧‧ first surface

102‧‧‧ second surface

110a‧‧‧First joint pad

110b‧‧‧Second joint pad

110c‧‧‧ third joint pad

120a, 140a‧‧‧ first contact pads

120b, 140b‧‧‧second contact pad

120, 130‧‧‧ third contact pad

130a‧‧‧First area

130b‧‧‧Second area

20‧‧‧Semiconductor laminate

201‧‧‧First semiconductor layer

202‧‧‧Second semiconductor layer

203‧‧‧Active layer

16‧‧‧Reflective structure

18‧‧‧current dispersion layer

30a‧‧‧First exposed area

30b‧‧‧Second exposed area

32‧‧‧Metal bumps

36’‧‧‧through hole

36a‧‧‧First group of through holes

36b‧‧‧Second group of through holes

40‧‧‧First insulation

401‧‧‧First insulation opening of the first group

402‧‧‧Second insulation opening of the second group

50‧‧‧Contact layer

501‧‧‧Contact opening

60‧‧‧Second insulation

601‧‧‧Second insulation opening of the first group

602‧‧‧Second insulation opening of the second group

200‧‧‧Electrical mat

300, 300'‧‧‧ Thermal pad

56a, 56b‧‧‧ first line and second line

62‧‧‧The third insulation layer

64, 64a, 64b‧‧‧ metal layer

FIG. 1A is a top view of a light emitting diode according to an embodiment of the present application.

Fig. 1B is a cross-sectional view showing a light-emitting element of an embodiment of the present application.

Fig. 1C is a cross-sectional view showing a light-emitting element of another embodiment of the present application.

Fig. 2 is a cross-sectional view showing a light-emitting element of another embodiment of the present application.

Fig. 3A is a cross-sectional view showing a light-emitting element of another embodiment of the present application.

Fig. 3B is a cross-sectional view showing a light-emitting element of another embodiment of the present application.

Claims (10)

A light emitting device comprising: a semiconductor stack having a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a first bonding pad is located a first bonding pad is electrically connected to the first semiconductor layer; a second bonding pad is located on the first side of the semiconductor stack, and the second bonding pad is electrically connected to the first side a second semiconductor layer; the third bonding pad is electrically insulated from the semiconductor bonding layer, the third bonding pad is located between the first bonding pad and the second bonding pad; an insulating material is located on the first bonding pad, the Between the second bonding pad and the third bonding pad; and a conductive pad and a thermal pad on the first side of the semiconductor stack; a plurality of exposed regions are located in the semiconductor stack to expose the first semiconductor a portion of the layer; a first insulating layer covering the semiconductor layer and a portion of the exposed regions to form a plurality of first openings respectively corresponding to the exposed regions, and the first openings exposing the exposed regions Semiconductor layer a contact layer covering the first insulating layer and contacting the portion of the first semiconductor layer via the first openings; and a second insulating layer covering the contact layer having a plurality of second opening exposed portions The first bonding pad, the second bonding pad, and the third bonding pad are spatially separated from each other on the second insulating layer; wherein the first bonding pad and the second bonding pad One of the first pads is connected to the thermal pad; and the first openings are offset from the second openings and do not overlap each other. The illuminating element of claim 1, wherein the third bonding pad is electrically insulated from the first bonding pad and the second bonding pad. The illuminating device of claim 1, further comprising: a first substrate, the first substrate comprising a first surface and a second surface opposite to the first surface; and a conductive path and a heat conduction Channels are respectively located in the first substrate extending from the first surface to the second surface, wherein the conductive channel and the heat conducting channel are electrically insulated from each other; wherein the semiconductor stack is located on the first surface of the first substrate The conductive pad and the conductive pad are located on the second surface of the first substrate, and the conductive pad is connected to the one of the first bonding pad and the second bonding pad through the conductive path, and the thermal pad is transparent The heat conduction channel is connected to the third bonding pad. The illuminating device of claim 3, further comprising: a first contact pad, a second contact pad, and a third contact pad disposed on the first surface, the semiconductor laminate and the first The first contact pad and the second contact pad are respectively connected to the conductive path and the heat conduction channel; wherein the third bonding pad is bonded to the second contact pad, the first bonding pad and the second The other of the bond pads is bonded to the third contact pad. The light-emitting element of claim 4, wherein the first contact pad, the second contact pad, and the third contact pad respectively comprise a plurality of metal bumps, the insulating material being located between the plurality of metal bumps . The illuminating element of claim 5, wherein the third contact pad comprises: a first region located within a projected area of the semiconductor stack; and a second region located at the semiconductor stack Outside the projected area, used to wire. The illuminating device of claim 1, further comprising a second substrate connecting the thermal pad and the conductive pad. The illuminating element of claim 4, wherein an area of the thermal pad is greater than an area of the conductive pad, or an area of the thermal pad is greater than an area of the first contact pad and the third contact pad, or The area of the thermal pad is greater than the area of the second contact pad and the third contact pad. The light-emitting element of claim 1, wherein the semiconductor stack comprises at least one sidewall, and the second insulating layer covers the sidewall of the semiconductor stack. The illuminating element of claim 4, further comprising a non-conductive material between the conductive pad and the thermal pad.