TWI617809B - Method of examining quality of silicon material - Google Patents
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Abstract
一種矽原料品質的檢驗方法,包含有下列步驟:提供一矽原料;將該矽原料浸於酸液中,使該矽原料之表層溶解於酸液後,將該矽原料未被溶解的其餘部分自酸液中取出;取溶有該矽原料之表層的酸液之一部分,並檢測所取之酸液中的金屬含量;依據所檢測的金屬含量判定該矽原料的等級為複數個預定等級之中的一者。藉此,可快速準確判斷矽原料的品質。The invention relates to a method for testing the quality of a raw material, comprising the steps of: providing a raw material; immersing the raw material in an acid solution, dissolving the surface layer of the raw material in the acid solution, and leaving the remaining portion of the raw material undissolved Extracting from the acid solution; taking a portion of the acid solution in which the surface layer of the niobium material is dissolved, and detecting the metal content in the acid solution taken; determining the grade of the niobium material as a plurality of predetermined grades according to the detected metal content One of them. Thereby, the quality of the raw material can be quickly and accurately determined.
Description
本發明係與矽原料品質檢驗有關;特別是指一種矽原料品質的檢驗方法。 The invention relates to the quality inspection of bismuth raw materials; in particular to a method for testing the quality of bismuth raw materials.
矽晶碇係由矽原料所製成,習知鑄造矽晶碇的方法主要包括有CZ法與定向凝固法,無論是以何種方法鑄造矽晶碇,均是晶碇鑄造完成後,才以檢測設備檢測晶碇的載子壽命(lifetime)、載子壽命對應(lifetime mapping)圖中紅區(Red zone)的分佈,以評價晶碇的品質。前述之紅區為晶碇中金屬富集之區域,於紅區中的載子壽命相對較低。 The twins are made of tantalum raw materials. The conventional methods for casting twins include CZ and directional solidification. No matter which method is used to cast the twins, they are all after the casting. The detection device detects the carrier lifetime of the wafer and the distribution of the red zone in the life map of the carrier to evaluate the quality of the wafer. The aforementioned red region is a region in which metal is concentrated in the germanium, and the carrier life in the red region is relatively low.
然而,影響矽晶碇品質的因素除了鑄造過程中的製程條件之外,矽原料的品質更是左右矽晶碇品質的主要因素之一。目前鑄造晶碇的業者都是大量購買矽原料,再抽樣將矽原料鑄造成晶碇後,藉由晶碇的品質反推矽原料的品質。惟,將矽原料熔化後再凝固成晶碇需相當長的時間,以前述之方式反推矽原料的品質將使得檢驗矽原料品質的時間耗費過多。此外,矽原料的品質參差不齊,若抽樣時同時取到品質較佳及品質不良的矽原料,將會使晶碇的整體的品質下降,在反推矽原料品質時,反而將品質較佳之矽原料誤判為品質不良。 However, in addition to the process conditions in the casting process, the quality of the raw materials in the casting process is one of the main factors affecting the quality of the twins. At present, the manufacturers of crystal enamel are buying a large amount of bismuth raw materials, and then sampling the raw materials into crystal slabs, and then pushing the quality of the raw materials by the quality of the enamel. However, it takes a long time to melt the raw material and then solidify it into crystals. The quality of the raw materials in the above-mentioned manner will make the time for testing the quality of the raw materials excessive. In addition, the quality of the raw materials is uneven. If the raw materials with better quality and poor quality are taken at the same time, the overall quality of the crystals will be degraded. When the quality of the raw materials is reversed, the quality will be better.矽 Raw materials are misjudged as poor quality.
有鑑於此,本發明之目的在於提供一種矽原料品質的檢驗方法,可有效減少判斷矽原料品質的時間。 In view of the above, an object of the present invention is to provide a method for testing the quality of a raw material of tantalum, which can effectively reduce the time for judging the quality of the raw material.
緣以達成上述目的,本發明提供的一種矽原料品質的檢驗方法,包含有下列步驟:A、提供一矽原料;B、將該矽原料浸於酸液中,使該矽原料之表層溶解於酸液後,將該矽原料未被溶解的其餘部分自酸液中取出;C、取步驟B中溶有該矽原料之表層的酸液之一部分,並檢測所取之酸液中的金屬含量;D、依據步驟C中所檢測的金屬含量判定該矽原料的等級為複數個預定等級之中的一者。 In order to achieve the above object, the present invention provides a method for testing the quality of tantalum raw materials, comprising the steps of: A, providing a raw material; B, immersing the raw material in an acid solution, so that the surface layer of the raw material is dissolved in After the acid solution, the remaining portion of the ruthenium raw material that has not been dissolved is taken out from the acid solution; C, a portion of the acid solution in which the surface layer of the ruthenium raw material is dissolved in step B is taken, and the metal content in the acid solution taken is detected. D, determining the grade of the tantalum raw material according to the metal content detected in step C is one of a plurality of predetermined levels.
本發明之效果在於,藉由檢測溶有矽原料表層之酸液中的金屬含量,即可判定矽原料的等級,且可對應出矽原料鑄造成的晶碇之品質,快速準確判斷矽原料的品質,有效減少判斷矽原料品質的時間。 The effect of the present invention is that the level of the bismuth raw material can be determined by detecting the metal content in the acid solution in which the surface layer of the bismuth raw material is dissolved, and the quality of the bismuth raw material can be determined quickly and accurately. Quality, effectively reducing the time to judge the quality of raw materials.
S101~S105‧‧‧步驟 S101~S105‧‧‧Steps
S201~S204‧‧‧步驟 S201~S204‧‧‧Steps
圖1為本發明一較佳實施例之矽原料品質的檢驗方法檢測矽原料品質的流程圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a flow chart showing the quality of a raw material in accordance with a preferred embodiment of the present invention for detecting the quality of the raw material.
圖2為上述較佳實施例檢測另一矽原料品質的流程圖。 Figure 2 is a flow chart showing the quality of another crucible material in the preferred embodiment described above.
圖3為上述較佳實施例第一級的矽原料鑄成之晶碇的載子壽命對應(lifetime mapping)圖。 Fig. 3 is a diagram showing the life-time mapping of the wafers of the first-stage tantalum raw material cast in the above preferred embodiment.
圖4為上述較佳實施例第二級的矽原料鑄成之晶碇的載子壽命對應圖。 Fig. 4 is a view showing the carrier life of the wafer of the second stage of the above-described preferred embodiment.
圖5為上述較佳實施例第三級的矽原料鑄成之晶碇的載子壽命對應圖。 Fig. 5 is a view showing the carrier life of the wafer of the third stage of the above-described preferred embodiment.
為能更清楚地說明本發明,茲舉一較佳實施例並配合圖式詳細說明如後。請參圖1與圖2所示,為本發明一較佳實施例之矽原料品質的檢驗方法的流程圖,包括有下列步驟:步驟S101中,係取一矽原料,該矽原料包括至少一個矽塊,亦可為多個矽塊。將所取之矽原料進行清洗,以去除該矽原料表面的雜質,本實施例中,清洗的步驟係將矽原料浸入一第一酸液中,其中該第一酸液包含氫氟酸及硝酸,但不以此為限,在實施上第一酸液亦可以是醋酸、硫酸、鹽酸、磷酸等。之後,再將該矽原料自該第一酸液中取出,置於去離水中,以溢流的方式清洗。 In order to explain the present invention more clearly, a preferred embodiment will be described in detail with reference to the drawings. Referring to FIG. 1 and FIG. 2, a flow chart of a method for testing the quality of a raw material according to a preferred embodiment of the present invention includes the following steps: in step S101, a raw material is obtained, and the raw material includes at least one A block can also be a plurality of blocks. The raw material taken is washed to remove impurities on the surface of the tantalum raw material. In the embodiment, the step of washing is to immerse the niobium raw material in a first acid liquid, wherein the first acid liquid comprises hydrofluoric acid and nitric acid. However, not limited thereto, the first acid solution may be acetic acid, sulfuric acid, hydrochloric acid, phosphoric acid or the like. Thereafter, the ruthenium raw material is taken out from the first acid liquid, placed in the deionized water, and washed in an overflow manner.
步驟S102,提供一第二酸液,並取一部分檢測第二酸液中的金屬含量,以得到一背景值,本實施例中,係以感應耦合電漿發射光譜儀(Inductively couple plasma optical emission spectrometry,ICP/OES)檢測金屬含量。本實施例中,該第二酸液包含氫氟酸及硝酸,且比例為1:11,但不以此為限,在實施上第二酸液亦可以是醋酸、硫酸、鹽酸、磷酸等。所檢測的金屬含量之中的金屬成分包括鐵(Fe)、鋁(Al)、銅(Cu)、鎂(Mg)之中的至少一者,本實例中檢測的金屬成分為Ag、Al、B、Ba、Bi、Ca、Cd、Co、Cr、Cu、Fe、Ga、In、K、Li、Mg、Mn、Na、Ni、Pb、Sr、Tl、Zn。 Step S102, providing a second acid solution, and taking a portion of the metal content in the second acid solution to obtain a background value. In this embodiment, an Inductively Couple Plasma Optical Emission Spectrometer (Inductively Couple Plasma Optical Emission Spectrometry, ICP/OES) detects metal content. In this embodiment, the second acid solution comprises hydrofluoric acid and nitric acid, and the ratio is 1:11, but not limited thereto. In the implementation, the second acid solution may also be acetic acid, sulfuric acid, hydrochloric acid, phosphoric acid or the like. The metal component among the detected metal contents includes at least one of iron (Fe), aluminum (Al), copper (Cu), and magnesium (Mg), and the metal components detected in the present example are Ag, Al, and B. , Ba, Bi, Ca, Cd, Co, Cr, Cu, Fe, Ga, In, K, Li, Mg, Mn, Na, Ni, Pb, Sr, Tl, Zn.
步驟S103,係將清洗後的該矽原料浸於第二酸液中,使該矽原料之表層溶解於第二酸液,藉由硝酸將矽原料之表層氧化成二氧化矽,再藉由氫氟酸腐蝕二氧化矽的特性,讓二氧化矽溶解,藉此讓在該矽原料表層中的金屬雜質一併的溶於第二酸液之中。而後將該矽原料未被溶解的其餘部分自第二酸液中取出。所取出的該矽原料則再置於去離水中,以溢流的方式清洗,以供鑄造為晶碇之用。該矽原料浸置於第二酸液的時間至少為5分鐘,本實施例為10~15分鐘,浸置5分鐘以上溶出的金屬含量,即可對應最後鑄造成晶碇的品質。 Step S103, immersing the cleaned raw material in the second acid solution, dissolving the surface layer of the tantalum raw material in the second acid liquid, and oxidizing the surface layer of the tantalum raw material into cerium oxide by nitric acid, and then using hydrogen The characteristics of the ceric acid corroding cerium oxide dissolve the cerium oxide, thereby dissolving the metal impurities in the surface layer of the cerium material together in the second acid liquid. The remainder of the bismuth material that has not been dissolved is then removed from the second acid solution. The extracted raw material is then placed in the deionized water and washed in an overflow manner for casting into a wafer. The time for the bismuth raw material to be immersed in the second acid liquid is at least 5 minutes, and the metal content dissolved in the embodiment for 10 to 15 minutes and immersed for 5 minutes or more can correspond to the quality of the final casting into a crystal crucible.
步驟S104,取步驟S103中溶有該矽原料之表層的第二酸液之一部分,並檢測所取之第二酸液中的金屬含量,本實施例中,同樣是以感應耦合電漿發射光譜儀檢測金屬含量,所檢測的金屬成分與步驟S102相同。 Step S104, taking a portion of the second acid solution in which the surface layer of the niobium material is dissolved in step S103, and detecting the metal content in the second acid solution taken. In this embodiment, the inductively coupled plasma emission spectrometer is also used. The metal content is detected, and the detected metal component is the same as step S102.
步驟S105,依據步驟S104中所檢測的金屬含量判定該矽原料的等級為複數個預定等級之中的一者,該些預定等級係預先定義者,且該些預定等級至少為二級,於本實施例中該些預定等級為三級,分別為第一級至第三級,其中第一級的矽原料之品質最高,於第二級的矽原料之品質次之,以此類推。由於金屬含量對於矽原料鑄造成晶碇的載子壽命(lifetime)會產生影響,因此,預定等級的定義主要是依據總金屬含量的多寡而定。此外,由於鐵、鋁、銅、鎂四種金屬對最後鑄造成晶碇的載子壽命的影響較其它金屬高,鐵、鋁、銅、鎂四種金屬各別的含量或是加總的含量之多寡也是判定等級的因素之一,因此,實施上除了以總金屬含量為定義預定等級的主要因素之外,鐵、鋁、銅、鎂四種金屬的含量亦可給予不同的權重,以作為定義預定等級的輔助因素, 例如鐵含量的權重最高,鋁含量的權重次之,以此類推。本實施例中,係以步驟S104所檢測的金屬含量扣除步驟S102的該背景值,以判定該矽原料的等級。 Step S105, determining, according to the metal content detected in step S104, the level of the niobium material is one of a plurality of predetermined levels, the predetermined levels being predefined, and the predetermined levels are at least two levels, In the embodiment, the predetermined grades are three grades, which are first to third grades respectively, wherein the quality of the first grade of tantalum raw material is the highest, the quality of the second grade of tantalum raw material is second, and so on. Since the metal content has an effect on the carrier lifetime of the crucible material being cast into a crucible, the definition of the predetermined grade is mainly determined by the amount of total metal content. In addition, since the four metals of iron, aluminum, copper and magnesium have higher influence on the life of the last cast-forming carrier than other metals, the content of each of the four metals of iron, aluminum, copper and magnesium or the total content of the metal. The amount of iron is also one of the factors determining the grade. Therefore, in addition to the main factor of determining the predetermined grade by the total metal content, the content of iron, aluminum, copper and magnesium can be given different weights. Define the auxiliary factors for the predetermined level, For example, the weight of iron is the highest, the weight of aluminum is second, and so on. In this embodiment, the background value of step S102 is subtracted from the metal content detected in step S104 to determine the grade of the tantalum material.
為了能重覆地使用其餘的第二酸液,更進行圖2所示步驟: In order to reuse the remaining second acid solution, the steps shown in Figure 2 are further performed:
步驟S201,提供另一矽原料,並將所取之該另一矽原料進行清洗,以洗去該另一矽原料表面的雜質,清洗的步驟與步驟S101相同,容不贅述。 In step S201, another raw material is supplied, and the other raw material is washed to wash away impurities on the surface of the other raw material. The cleaning step is the same as step S101, and is not described herein.
步驟S202,將該另一矽原料浸於其餘的第二酸液中(即步驟S103溶有該矽原料之表層的第二酸液),使該另一矽原料之表層溶解於第二酸液後,將該另一矽原料未被溶解的其餘部分自第二酸液中取出;所取出的該另一矽原料置於去離水中,以溢流的方式清洗,以供鑄造為晶碇之用。 Step S202, immersing the other bismuth raw material in the remaining second acid solution (ie, the second acid solution in which the surface layer of the bismuth raw material is dissolved in step S103), so that the surface layer of the other bismuth raw material is dissolved in the second acid solution. Thereafter, the remaining portion of the other raw material that has not been dissolved is taken out from the second acid liquid; the other raw material taken out is placed in the deionized water and washed in an overflow manner for casting into a crystal crucible. use.
步驟S203,取步驟S202中溶有該另一矽原料之表層的第二酸液之一部分,並以感應耦合電漿發射光譜儀檢測所取之第二酸液中的金屬含量,所檢測的金屬成分與步驟S102相同。 Step S203, taking a portion of the second acid solution in which the surface layer of the other tantalum material is dissolved in step S202, and detecting the metal content in the second acid solution taken by the inductively coupled plasma emission spectrometer, the detected metal component The same as step S102.
步驟S204,以浸入該另一矽原料之前所測得的第二酸液之金屬含量為新的背景值(即步驟S104測得的金屬含量),並依據S203中所檢測的金屬含量扣除新的背景值,以判定該另一矽原料的等級為步驟S105中該些預定等級之中的一者。 Step S204, the metal content of the second acid liquid measured before immersing the other raw material is a new background value (ie, the metal content measured in step S104), and deducting the new one according to the metal content detected in S203. The background value is used to determine the rank of the other raw material as one of the predetermined ranks in step S105.
若有其它的矽原料則重覆步驟S201~S204來判定其它的矽原料的等級。 If there are other niobium materials, the steps S201 to S204 are repeated to determine the grades of the other niobium materials.
以下請配合表一及圖3~圖5,說明以本實施例之矽原料品質的檢驗方法依據該些預定等級分類而篩選出三種不同等級(第一級至第三級)的矽原料,並將各該等級的矽原料以定向凝固法分別鑄造為晶碇的平均載子壽命比較,其中總金屬含量、鐵含量、鋁含量、銅含量、鎂含量皆為扣除背景值後的含量。其中,雖第三級的矽原料的總金屬含量較第二級少,但第三級的矽原料的鐵含量較多且由於鐵含量的權重較高,因此判定為第三級。 Hereinafter, please refer to Table 1 and FIG. 3 to FIG. 5 to illustrate the use of the test method for the quality of the raw materials of the present embodiment to select three different grades (first to third) of tantalum raw materials according to the predetermined grade classifications, and The average carrier life of each of the grades of tantalum raw materials was determined by directional solidification method, wherein the total metal content, iron content, aluminum content, copper content, and magnesium content were all after subtracting the background value. Among them, although the total metal content of the third-stage niobium raw material is smaller than that of the second grade, the third-stage niobium raw material has a large iron content and a higher weight due to the iron content, and thus is judged to be the third grade.
第一級的矽原料其檢測出的總金屬含量最低,由圖3中亦可明顯看出第一級矽原料之晶碇頂部的紅區(Red Zone)範圍最小,晶碇的平均載子壽命最高,亦即晶碇的品質最高。請配合圖4與圖5,第二級的矽原料總金屬含量及鎂含量雖高於第三級的矽原料,但第二級的矽原料的鐵含量較第三級的矽原料少,因此,第二級的矽原料之晶碇的平均載子壽命高於第三級的矽原料之晶碇的平均載子壽命,且第二級的 矽原料之晶碇頂部的紅區範圍亦小於第三級的矽原料之晶碇頂部的紅區範圍。 The first-stage bismuth raw material has the lowest total metal content detected. It can be clearly seen from Fig. 3 that the red zone of the top of the first-stage bismuth raw material has the smallest red zone and the average carrier lifetime of the strontium. The highest, that is, the highest quality of the crystal. Please cooperate with Figure 4 and Figure 5. The total metal content and magnesium content of the second-grade tantalum raw material are higher than that of the third-grade tantalum raw material, but the iron content of the second-grade tantalum raw material is less than that of the third-grade tantalum raw material. The average carrier lifetime of the second stage of the germanium raw material is higher than the average carrier lifetime of the third stage of the germanium raw material, and the second stage The red zone of the top of the crucible of the crucible material is also smaller than the red zone of the top of the crucible of the third grade.
由上述之內容可知,本發明之矽原料品質的檢驗方法所判定之矽原料的等級,確實可以對應出晶碇的品質,相較於以晶碇品質反推矽原料品質的方式,本發明可有效減少判斷矽原料品質的時間。此外,由於本發明僅將矽原料進行部分溶解(只溶解表層),浸置於酸液的時間短,可減少等待溶解矽原料的時間,增加檢驗的產能。而使用感應耦合電漿發射光譜儀更可快速且準確地判斷矽原料的品質。更值得一提的是,先對矽原料分級篩選後,將相同等級的矽原料鑄造為晶碇,可以確保鑄造出高品質的晶碇,避免將不同等級的矽原料混合使用,讓金屬含量較多的矽原料影響晶碇的品質。 From the above, it can be seen that the grade of the raw material determined by the method for testing the quality of the raw material of the present invention can surely correspond to the quality of the crystal, and the present invention can be compared with the method of pushing the quality of the raw material with the quality of the wafer. Effectively reduce the time to judge the quality of raw materials. In addition, since the present invention only partially dissolves the ruthenium raw material (only dissolves the surface layer), the time of immersion in the acid solution is short, and the time for waiting for the dissolution of the ruthenium raw material can be reduced, and the productivity of the test can be increased. The inductively coupled plasma emission spectrometer can be used to quickly and accurately determine the quality of the raw materials. What's more worth mentioning is that after the grading and screening of the raw materials, the same grade of bismuth raw materials are cast into crystal enamel, which can ensure the casting of high-quality enamel, avoid mixing different grades of bismuth raw materials, and make the metal content more Many raw materials affect the quality of the wafer.
以上所述僅為本發明較佳可行實施例而已,舉凡應用本發明說明書及申請專利範圍所為之等效變化,理應包含在本發明之專利範圍內。 The above is only a preferred embodiment of the present invention, and equivalent changes to the scope of the present invention and the scope of the patent application are intended to be included in the scope of the present invention.
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Publication number | Priority date | Publication date | Assignee | Title |
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US5386796A (en) * | 1991-03-14 | 1995-02-07 | Shin-Etsu Handotai Co., Ltd. | Method for testing quality of silicon wafer |
TW414994B (en) * | 1999-06-29 | 2000-12-11 | Macronix Int Co Ltd | Method of detecting semiconductor wafer quality or defect |
TW200625494A (en) * | 2004-08-05 | 2006-07-16 | Komatsu Denshi Kinzoku Kk | Method for estimating quality of silicon single crystal |
TWI449930B (en) * | 2012-07-18 | 2014-08-21 | Sino American Silicon Prod Inc | Method of determining quality of silicon brick |
CN104599993A (en) * | 2014-12-31 | 2015-05-06 | 杭州士兰集成电路有限公司 | Method for detecting quality of silicon substrate |
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---|---|---|---|---|
US5386796A (en) * | 1991-03-14 | 1995-02-07 | Shin-Etsu Handotai Co., Ltd. | Method for testing quality of silicon wafer |
TW414994B (en) * | 1999-06-29 | 2000-12-11 | Macronix Int Co Ltd | Method of detecting semiconductor wafer quality or defect |
TW200625494A (en) * | 2004-08-05 | 2006-07-16 | Komatsu Denshi Kinzoku Kk | Method for estimating quality of silicon single crystal |
TWI449930B (en) * | 2012-07-18 | 2014-08-21 | Sino American Silicon Prod Inc | Method of determining quality of silicon brick |
CN104599993A (en) * | 2014-12-31 | 2015-05-06 | 杭州士兰集成电路有限公司 | Method for detecting quality of silicon substrate |
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