TWI595803B - White light illumination system - Google Patents
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- TWI595803B TWI595803B TW101109704A TW101109704A TWI595803B TW I595803 B TWI595803 B TW I595803B TW 101109704 A TW101109704 A TW 101109704A TW 101109704 A TW101109704 A TW 101109704A TW I595803 B TWI595803 B TW I595803B
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- 238000005286 illumination Methods 0.000 title claims description 88
- 235000012431 wafers Nutrition 0.000 claims description 125
- 239000000463 material Substances 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 31
- 239000000843 powder Substances 0.000 claims description 21
- 238000001228 spectrum Methods 0.000 claims description 12
- 230000005284 excitation Effects 0.000 claims description 11
- -1 gallium phosphide compound Chemical class 0.000 claims description 4
- 229910005540 GaP Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 29
- 230000000052 comparative effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 238000000695 excitation spectrum Methods 0.000 description 6
- 239000003086 colorant Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000009877 rendering Methods 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910004122 SrSi Inorganic materials 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
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Description
本發明是有關於一種白光照明系統,且特別是有關於一種通過混合光而形成白光的白光照明系統。 This invention relates to a white light illumination system, and more particularly to a white light illumination system that forms white light by mixing light.
白光發光二極體(light-emitting diode,LED)是發光二極體產業中被看好的新興產品,在全球能源短缺的憂慮再度升高的背景下,白光發光二極體在照明市場的前景備受全球矚目。 White light-emitting diodes (LEDs) are emerging products that are favored in the LED industry. In the context of the global energy shortage, the white light-emitting diodes are in the foreground of the lighting market. Focused on the world.
所謂白光是多種顏色混合而成的光,以人類眼睛所能見的白光形式至少須兩種光混合,如兩種波長的光(藍色光和黃色光)或三種波長的光(藍色光、綠色光和紅色光)混合。目前白光發光二極體元件主要採用的混合方法是:將藍光發光二極體晶片和可被藍光有效激發的黃光螢光粉做結合。一部分藍光被螢光粉吸收,激發螢光粉發射黃光。發射的黃光和剩餘的藍光混合,接著調控它們的強度比即可得到各種色溫的白光。但這樣的混合方法因缺少紅色波段,故演色性(Colour Rendering Index,CRI)偏低,為了提高發光二極體的演色性,則會添加紅色螢光粉以提高可見光光譜的涵蓋範圍。然而由於螢光粉將第一種波長的光轉換為第二種波長的光時,光的能量會有所損失,故此做法將導致整個組件的發光效率降低。尤其是所需的色溫愈低,用到的紅色螢光粉則愈多,不僅光效損失嚴重,性價比(cost-performance ratio)也較差。 The so-called white light is a mixture of multiple colors. At least two kinds of light must be mixed in the form of white light visible by human eyes, such as two wavelengths of light (blue light and yellow light) or three wavelengths of light (blue light, green light). Mixed with red light). At present, the main mixing method of the white light emitting diode element is to combine the blue light emitting diode chip with the yellow light fluorescent powder which can be effectively excited by the blue light. A part of the blue light is absorbed by the fluorescent powder, and the fluorescent powder is excited to emit yellow light. The emitted yellow light is mixed with the remaining blue light, and then their intensity ratios are adjusted to obtain white light of various color temperatures. However, such a hybrid method lacks a red band, so the Colour Rendering Index (CRI) is low. In order to improve the color rendering of the light-emitting diode, red phosphor powder is added to increase the coverage of the visible light spectrum. However, since the phosphor converts the light of the first wavelength into the light of the second wavelength, the energy of the light is lost, so that the luminous efficiency of the entire assembly is lowered. In particular, the lower the required color temperature, the more red phosphors are used, not only the loss of light efficiency, but also the cost-performance ratio.
由於現今紅光晶片的製作工藝日趨成熟,紅光晶片的亮度愈來愈高,所以也有使用紅光晶片提供所需的紅光的情況。這樣的白光發光二極體元件與組合藍光晶片、紅色和黃色螢光粉的白光發光二極體元件相比,發光效率可以提高10%以上。在相關現有技術中,如美國專利第6513949號、第7126274號、第7215074號及第7005679號曾提及使用藍光晶片與紅光晶片,並搭配黃色螢光粉,如此照明系統中能獲得較佳的演色性。但是,由於紅光晶片對溫度的穩定性較差,在高溫下有熱衰減(Hot/Cold Factor)的問題。隨著工作溫度升高,紅光的衰減率大於藍光和黃光的衰減率,則整個發光二極體元件發出的光會呈現嚴重的色偏問題,而無法達到能源之星(Energy Star)與美國國家標準協會(American National Standards Institute,ANSI)中7階麥克亞當橢圓(7-step MacAdam Ellipse)的等級。 As the production process of red light wafers is becoming more mature today, the brightness of red light wafers is getting higher and higher, so there is also a case where red light wafers are used to provide the required red light. Such a white light-emitting diode element can improve luminous efficiency by 10% or more as compared with a white light-emitting diode element combining a blue light wafer and red and yellow phosphor powder. In the related art, the use of a blue light wafer and a red light wafer with a yellow phosphor powder has been mentioned in the prior art, such as U.S. Patent Nos. 6,513,949, 7,126,274, 7,015, 074, and 7,005, 679, so that a better illumination system can be obtained. Color rendering. However, due to the poor stability of the red light wafer to temperature, there is a problem of hot/cold factor at high temperatures. As the operating temperature increases, the red light decay rate is greater than the blue and yellow light decay rate, the light emitted by the entire light-emitting diode component will have a serious color shift problem, and can not reach the Energy Star and The rank of the 7-step MacAdam Ellipse in the American National Standards Institute (ANSI).
本發明提供一種白光照明系統,其具有較高的發光效率以及低的色偏差。 The present invention provides a white light illumination system that has high luminous efficiency and low color deviation.
本發明之一實施例提出一種白光照明系統。白光照明系統包括一第一發光晶片、一第二發光晶片以及一波長轉換單元。第一發光晶片適於發出一第一光,而第一光包括一第一紅光。第二發光晶片適於發出一第二光,其中第二光之光波長不同於第一光之光波長。波長轉換單元配置在第一發光晶片與第二發光晶片之上,其中第二光照射至波長轉換單元時,第二光被轉換為一激發光束,而激發光束 包括一第二紅光。此外,激發光束、第一光以及第二光共同混色成具有實質上近似於3000K的色溫之白光。 One embodiment of the present invention provides a white light illumination system. The white light illumination system includes a first light emitting chip, a second light emitting chip, and a wavelength conversion unit. The first illuminating wafer is adapted to emit a first light and the first light comprises a first red ray. The second luminescent wafer is adapted to emit a second light, wherein the second light has a different wavelength of light than the first light. The wavelength conversion unit is disposed on the first illuminating wafer and the second illuminating wafer, wherein when the second light is irradiated to the wavelength converting unit, the second light is converted into an excitation beam, and the excitation beam is excited Includes a second red light. Further, the excitation beam, the first light, and the second light are co-mixed into white light having a color temperature substantially similar to 3000K.
在本發明之一實施例中,上述之第一發光晶片為一紅光晶片,第二發光晶片為多個藍光晶片。 In an embodiment of the invention, the first illuminating wafer is a red ray wafer, and the second illuminating wafer is a plurality of blue ray wafers.
在本發明之一實施例中,上述之波長轉換單元更包括第一波長轉換材料以及第二波長轉換材料。第一波長轉換材料將第二光轉換成第二紅光。第二波長轉換材料將第二光轉換成一第三光。 In an embodiment of the invention, the wavelength conversion unit further includes a first wavelength conversion material and a second wavelength conversion material. The first wavelength converting material converts the second light into a second red light. The second wavelength converting material converts the second light into a third light.
在本發明之一實施例中,上述之第三光為一黃光。 In an embodiment of the invention, the third light is a yellow light.
在本發明之一實施例中,上述之第一紅光之光譜的峰值波長不同於第二紅光之光譜的峰值波長。 In an embodiment of the invention, the peak wavelength of the spectrum of the first red light is different from the peak wavelength of the spectrum of the second red light.
在本發明之一實施例中,上述之第一紅光之光譜的峰值波長實質等同於第二紅光之光譜的峰值波長。 In an embodiment of the invention, the peak wavelength of the spectrum of the first red light is substantially equivalent to the peak wavelength of the spectrum of the second red light.
在本發明之一實施例中,白光照明系統在運作溫度為攝氏85度的狀態下,白光照明系統所發出的白光之色偏差維持在7階麥克亞當橢圓(MacAdam Ellipse)的範圍之內。 In one embodiment of the present invention, the white light illumination system maintains a white light color deviation emitted by the white light illumination system within a range of a MacAdam Ellipse at a temperature of 85 degrees Celsius.
在本發明之一實施例中,上述之第一晶片的材料包括磷化鎵類化合物或砷化鎵類化合物。 In an embodiment of the invention, the material of the first wafer comprises a gallium phosphide compound or a gallium arsenide compound.
在本發明之一實施例中,上述之第一波長轉換材料為氮化物或氮氧化物螢光粉。 In an embodiment of the invention, the first wavelength converting material is a nitride or oxynitride phosphor.
本發明之一實施例提出一種白光照明系統。白光照明系統包括多個發光晶片以及一波長轉換單元。這些發光晶片適於發射兩種以上的光,其中這些光包括藍光和第一紅光。波長轉換單元包括一第一波長轉換材料以及一第二波 長轉換材料,其中藍光被第一波長轉換材料轉換成一第二紅光,第二紅光之光波長不同於第一紅光之光波長,而藍光被第二波長轉換材料轉換成黃光。這些光、黃光以及第二紅光共同混色成一白光,白光具有接近3000K的色溫,且白光照明系統在溫度攝氏85度所發出的白光之色偏差在7階麥克亞當橢圓(7-step MacAdam Ellipse)的範圍之內。 One embodiment of the present invention provides a white light illumination system. The white light illumination system includes a plurality of light emitting wafers and a wavelength conversion unit. These luminescent wafers are adapted to emit more than two types of light, wherein the light comprises blue light and first red light. The wavelength conversion unit includes a first wavelength conversion material and a second wave The long conversion material, wherein the blue light is converted into a second red light by the first wavelength converting material, the second red light has a different wavelength than the first red light, and the blue light is converted into the yellow light by the second wavelength converting material. The light, yellow light and the second red light are mixed together into a white light, the white light has a color temperature close to 3000K, and the white light illumination system emits a white light color deviation at a temperature of 85 degrees Celsius in the 7th order MacAdam Ellipse (7-step MacAdam Ellipse) Within the scope of).
在本發明之一實施例中,上述之多個晶片包括一紅光晶片和多個藍光晶片。 In an embodiment of the invention, the plurality of wafers includes a red light wafer and a plurality of blue light wafers.
基於上述,本發明之實施例之白光照明系統利用第一發光晶片所發出的第一紅光與波長轉換單元所轉換出的第二紅光來增加白光照明系統所提供的白光的演色性。其中,第一發光晶片可維持紅光的高發光效率,而波長轉換單元使紅光在高工作溫度下的色偏差減低。因此本發明之實施例的白光照明系統兼具高光效率與低色偏差。 Based on the above, the white light illumination system of the embodiment of the present invention increases the color rendering of the white light provided by the white light illumination system by using the first red light emitted by the first light emitting chip and the second red light converted by the wavelength conversion unit. Among them, the first light-emitting chip can maintain high luminous efficiency of red light, and the wavelength conversion unit reduces color deviation of red light at high operating temperature. Therefore, the white light illumination system of the embodiment of the present invention has both high light efficiency and low color deviation.
為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.
圖1A為本發明一實施例之白光照明系統示意圖,圖1B則是沿著圖1A中I-I’連線之剖面示意圖,其中圖1A省略了波長轉換單元的部分。請同時參照圖1A及圖1B,本實施例之白光照明系統10包括一第一發光晶片12、一第二發光晶片13以及一波長轉換單元14(繪示在圖1B)。第一發光晶片12適於適於發出一第一光L1,而第一光L1 包括一第一紅光。第二發光晶片13適於發出一第二光L2,其中第二光L2之光波長不同於第一光L1之光波長。波長轉換單元14配置在第一發光晶片12與第二發光晶片13之上,其中第二光L2照射至波長轉換單元14時,第二光L2被轉換為一激發光束L3,而激發光束L3包括一第二紅光L3’。此外,激發光束L3、第一光L1以及第二光L2共同混色成具有實質近似於3000K的色溫之白光。 1A is a schematic view of a white light illumination system according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line I-I' of FIG. 1A, wherein FIG. 1A omits a portion of the wavelength conversion unit. Referring to FIG. 1A and FIG. 1B, the white light illumination system 10 of the present embodiment includes a first light-emitting chip 12, a second light-emitting chip 13, and a wavelength conversion unit 14 (shown in FIG. 1B). The first luminescent wafer 12 is adapted to emit a first light L1, and the first light L1 Includes a first red light. The second illuminating wafer 13 is adapted to emit a second light L2, wherein the second light L2 has a different wavelength of light than the first light L1. The wavelength conversion unit 14 is disposed on the first luminescent wafer 12 and the second luminescent wafer 13, wherein when the second light L2 is irradiated to the wavelength conversion unit 14, the second light L2 is converted into an excitation light beam L3, and the excitation light beam L3 is included A second red light L3'. Further, the excitation light beam L3, the first light L1, and the second light L2 are collectively mixed to have white light having a color temperature substantially equivalent to 3000K.
具體而言,本實施例之白光照明系統10更可包括一基座11,而第一發光晶片12及第二發光晶片13可利用熱電分離或熱電合一的技術配置在基座11上。在本實施例中,基座11上固定了八個發光晶片,其中包括了一個紅光晶片以及七個藍光晶片。進一步而言,第一發光晶片12可以是八個發光晶片中的一紅光晶片,第一發光晶片12可選擇性的固定在絕緣基座上(圖中未繪出),以絕緣電性。第二發光晶片13可以是八個發光晶片中其餘的七個藍光晶片。 Specifically, the white light illumination system 10 of the present embodiment may further include a pedestal 11 , and the first luminescent wafer 12 and the second luminescent wafer 13 may be disposed on the susceptor 11 by thermoelectric separation or thermoelectric integration. In this embodiment, eight luminescent wafers are mounted on the susceptor 11, including a red wafer and seven blue wafers. Further, the first illuminating wafer 12 may be one of the eight illuminating wafers, and the first illuminating wafer 12 may be selectively fixed on the insulating pedestal (not shown) to insulate electrical properties. The second luminescent wafer 13 may be the remaining seven of the eight luminescent wafers.
請繼續參照圖1A至圖1B中。在本實施例中,八個發光晶片的上方配置了波長轉換單元14,仔細而言,波長轉換單元14包括了第一波長轉換材料14a以及第二波長轉換材料14b。第一波長轉換材料14a可以是氮化物或氮氧化物的紅色螢光粉,而第二波長轉換材料14b可以是石榴石型的黃色螢光粉,例如為釔鋁石榴石螢光體的化合物,其中氮化物例如為CaAlSiN3,而氮氧化物例如為SrSi2O2N2。 Please continue to refer to FIG. 1A to FIG. 1B. In the present embodiment, the wavelength conversion unit 14 is disposed above the eight light-emitting wafers. Specifically, the wavelength conversion unit 14 includes the first wavelength conversion material 14a and the second wavelength conversion material 14b. The first wavelength converting material 14a may be a red phosphor of nitride or oxynitride, and the second wavelength converting material 14b may be a garnet-type yellow phosphor, such as a compound of yttrium aluminum garnet phosphor, wherein nitrogen The compound is, for example, CaAlSiN 3 , and the nitrogen oxide is, for example, SrSi 2 O 2 N 2 .
在本實施例中,第二發光晶片13(例如藍光晶片)所 發出的第二光L2(例如藍光)照射至第一波長轉換材料14a(例如紅色螢光粉)時,第一波長轉換材料14a受激發而產生第二紅光L3’。另一方面,第二發光晶片13(例如藍光晶片)所發出的第二光L2(例如藍光)照射至第二波長轉換材料14b(例如黃色螢光粉)時,第二波長轉換材料14b受激發而產生第三光L3”,其例如為黃光。如此一來,第一光L1(第一紅光)、第二光L2(藍光)、第二紅光L3’以及第三光L3”(黃光)便能混色成白色光,使整個白光照明系統10在工作時發出色溫為3000K左右的白光。然而本發明不限於此,在其他的實施例中,也可以使用其他顏色的第二發光晶片13,例如綠色、黃色或是琥珀色的發光晶片。如此再搭配第一發光晶片12(紅光晶片)和紅色螢光粉,亦或者是其他顏色的螢光粉,得以產生白光或白光以外的其他顏色的光。另外,在一實施例之白光照明系統中,除了添加黃色及紅色螢光粉之外,亦可功能性地再添加綠色螢光粉,以達到不同的發光照明效果。 In this embodiment, the second light-emitting chip 13 (for example, a blue light wafer) When the emitted second light L2 (e.g., blue light) is irradiated to the first wavelength converting material 14a (e.g., red phosphor), the first wavelength converting material 14a is excited to generate the second red light L3'. On the other hand, when the second light L2 (for example, blue light) emitted from the second light-emitting chip 13 (for example, a blue light wafer) is irradiated to the second wavelength converting material 14b (for example, yellow phosphor), the second wavelength converting material 14b is excited. The third light L3" is generated, which is, for example, yellow light. Thus, the first light L1 (first red light), the second light L2 (blue light), the second red light L3', and the third light L3" ( Huang Guang) can mix colors into white light, so that the entire white light illumination system 10 emits white light with a color temperature of about 3000K during operation. However, the invention is not limited thereto, and in other embodiments, a second luminescent wafer 13 of other colors, such as a green, yellow or amber luminescent wafer, may also be used. Thus, the first light-emitting chip 12 (red light wafer) and the red phosphor powder, or other color phosphor powder, can be used to generate light of other colors than white light or white light. In addition, in the white light illumination system of an embodiment, in addition to adding yellow and red phosphor powder, green phosphor powder may be functionally added to achieve different illumination effects.
在本實施例中,第一波長轉換材料14a受激發而產生的第二紅光L3’之光譜的峰值波長不同於第一發光晶片12所發出的第一紅光之光譜的峰值波長,如此補償了白光照明系統10的紅色光譜,然而在其他的實施例中,這兩者實質上是可以相同的。 In this embodiment, the peak wavelength of the spectrum of the second red light L3' generated by the excitation of the first wavelength converting material 14a is different from the peak wavelength of the spectrum of the first red light emitted by the first light emitting chip 12, thus compensating The red spectrum of the white light illumination system 10, however, in other embodiments, the two can be substantially identical.
請參照圖1A,舉例而言,本實施例之第一發光晶片可以是磷化鎵型或砷化鎵型的紅光發光二極體,其發射光之波長範圍介於600nm至700nm,而本實施例之第二發光 晶片可以是氮化銦鎵或氮化鎵型的藍光發光二極體晶片,其發射光之波長範圍介於405nm至470nm。此外,本實施例之波長轉換單元14為螢光粉(phosphor),然而在其他的實施例中,波長轉換單元14也可以是其他的形式,如參有螢光粉的陶瓷板。 Referring to FIG. 1A , for example, the first illuminating wafer of the embodiment may be a gallium phosphide type or a gallium arsenide type red light emitting diode, and the emitted light has a wavelength ranging from 600 nm to 700 nm. Second luminescence of an embodiment The wafer may be an indium gallium nitride or gallium nitride type blue light emitting diode wafer having a wavelength of light ranging from 405 nm to 470 nm. In addition, the wavelength conversion unit 14 of the present embodiment is a phosphor, however, in other embodiments, the wavelength conversion unit 14 may be in other forms, such as a ceramic plate with phosphor powder.
在一實施例中,螢光粉直接覆蓋於第二發光晶片13(藍光晶片)與第一發光晶片12(紅光晶片)時形成共型結構(conformal structure)在晶片上方,而在其他的實施例中,螢光粉亦可與第二發光藍光晶片與紅光晶片保持一段距離。此外,螢光粉的塗布方式可為噴塗、點膠、電泳或是鑄模(molding)。 In one embodiment, the phosphor directly covers the second luminescent wafer 13 (blue wafer) and the first luminescent wafer 12 (red wafer) to form a conformal structure over the wafer, while in other implementations In the example, the phosphor powder can also be kept at a distance from the second luminescent blue wafer and the red ray wafer. In addition, the fluorescent powder can be applied by spraying, dispensing, electrophoresis or molding.
以下列舉幾個實驗結果來驗證本發明的效果。 Several experimental results are listed below to verify the effects of the present invention.
在此提供相對於圖1A實施例之白光照明系統10的兩個對照例,對照例一以及對照例二。對照例一的結構和白光照明系統10相同,但八個發光晶片中有四個紅光晶片,另四個為藍光晶片,此外八個發光晶上方設有適量的黃色螢光粉,使整個照明系統在工作時發出色溫為3000K左右的白光。對照例二的結構也和白光照明系統10相同,但八個發光晶片均為藍光晶片,藍光晶片上方設有適量的黃色和紅色螢光粉,使整個發光裝置在工作時發出色溫為3000K左右的白光。 Two comparative examples of the white light illumination system 10 of the embodiment of Fig. 1A are provided herein, Comparative Example 1 and Comparative Example 2. The structure of the first control is the same as that of the white light illumination system 10, but there are four red light wafers among the eight light-emitting chips, and the other four are blue light-emitting chips, and an appropriate amount of yellow phosphor powder is disposed above the eight light-emitting crystals to make the entire illumination. The system emits white light with a color temperature of about 3000K during operation. The structure of the second embodiment is also the same as that of the white light illumination system 10, but the eight light-emitting chips are blue light wafers, and the appropriate amount of yellow and red phosphor powder is disposed above the blue light wafer, so that the entire light-emitting device emits a color temperature of about 3000K during operation. White light.
接著請參照圖2,圖2為圖1實施例之白光照明系統和對照例一在較高工作溫度下的色偏移在CIE色度坐標系中的對比圖。如圖2所示,折線21、22分別表示白光照明 系統10和對照例一從25℃升溫至85℃時發出的白光在CIE(Commission International de l'Eclairage)色度圖下的色偏量。根據美國能源之星(Energy Star)標準,白光照明系統10的白光之色偏量需維持在圖2中較大的橢圓環內,亦即達到能源之星(Energy Star)與美國國家標準協會(American National Standards Institute,ANSI)中7階麥克亞當橢圓(MacAdam Ellipse)的等級。更佳狀態是白光照明系統10的白光之色偏量維持在較小的橢圓環內,亦即達到能源之星(Energy Star)與美國國家標準協會(American National Standards Institute,ANSI)中的4階麥克亞當橢圓(MacAdam Ellipse)的等級。實際上,人眼無法感知在4階麥克亞當橢圓(MacAdam Ellipse)內的色偏量,且人眼也不容易分辨在較大的7階麥克亞當橢圓(MacAdam Ellipse)內的色偏量。 Next, please refer to FIG. 2. FIG. 2 is a comparison diagram of the color shift of the white light illumination system of the embodiment of FIG. 1 and the control example 1 at a higher operating temperature in a CIE chromaticity coordinate system. As shown in FIG. 2, the fold lines 21 and 22 respectively indicate white light illumination. The amount of color shift of the white light emitted by the system 10 and the control example 1 from the temperature rise of 25 ° C to 85 ° C under the CIE (Commission International de l'Eclairage) chromaticity diagram. According to the US Energy Star standard, the white light color shift of the white light illumination system 10 needs to be maintained within the larger elliptical ring of Figure 2, ie, Energy Star and the American National Standards Institute ( The American National Standards Institute (ANSI) ranks the 7th-order MacAdam Ellipse. A better condition is that the white light color shift of the white light illumination system 10 is maintained within a small elliptical ring, that is, to reach the fourth stage of the Energy Star and the American National Standards Institute (ANSI). The rating of the MacAdam Ellipse. In fact, the human eye cannot perceive the amount of color shift in the 4th-order MacAdam Ellipse, and the human eye does not easily distinguish the amount of color shift in the larger 7th-order MacAdam Ellipse.
如圖2所示,對照例一在攝氏85度(85℃)時的白光之色偏量遠遠超出了較大的橢圓環,而圖1實施例的白光照明系統10在85℃的白光之色偏量可以維持在較大的橢圓環內,人眼一般不會有感受到色偏感。 As shown in FIG. 2, the color shift of the white light at 85 degrees Celsius (85 ° C) in the comparative example 1 far exceeds the larger elliptical ring, and the white light illumination system 10 of the embodiment of FIG. 1 is white at 85 ° C. The color shift amount can be maintained in a large elliptical ring, and the human eye generally does not feel the color shift feeling.
對於有四個紅光晶片的對照例一而言,由於紅光晶片對溫度的穩定性較差,在高溫工作時發生的熱衰減比藍光晶片嚴重,因此高溫下的紅光晶片和藍光晶片之發光強度的變化量不一致,從而造成整個白光照明系統發生色偏移。圖1A實施例的白光照明系統10中配置有第一發光晶片(紅光晶片)12,而紅光晶片的數量並不限定於圖1A 所示的數量。在一實施例中,是使用一個紅光晶片,其餘所需紅光由紅色螢光粉提供。由於紅色螢光粉的熱衰減較不明顯,故整個白光照明系統10的色偏移遠遠小於只用紅光晶片提供紅光的對照例一。 For Comparative Example 1 with four red-light wafers, since the red light wafer is less stable to temperature, the thermal attenuation occurring at high temperature operation is more severe than that of the blue light wafer, so the light emission of the red and blue light crystals at high temperatures The amount of change in intensity is inconsistent, causing a color shift in the entire white light illumination system. The first light emitting chip (red light wafer) 12 is disposed in the white light illumination system 10 of the embodiment of FIG. 1A, and the number of red light wafers is not limited to FIG. 1A. The number shown. In one embodiment, a red light wafer is used and the remaining red light is provided by red phosphor. Since the thermal decay of the red phosphor is less pronounced, the color shift of the entire white illumination system 10 is much smaller than that of the first example in which only red light is used to provide red light.
圖3顯示圖1實施例之白光照明系統和對照例二在不同電流下工作的發光效率曲線。請參照圖3,曲線31、32分別為白光照明系統10和對照例二在順向電流為200mA~400mA下的發光效率曲線。可觀察到電流在200mA~400mA的範圍內,圖1A實施例之白光照明系統10的發光效率均高於對照例二。對於只用紅色螢光粉提供紅光的對照例二,由於紅色螢光粉發光效率較低,故整個發光裝置的發光效率不高。圖1A實施例之白光照明系統10配置有第一發光晶片12(紅光晶片),而紅光晶片的數量並不限定於圖示的數量。在一實施例中,是使用一個紅光晶片12,如此取代了部分紅色螢光粉的功能並提供白光照明系統10所需的一部分紅光。由於紅光晶片的發光效率較高,因此白光照明系統10的整體發光效率高於對照例二。 Figure 3 is a graph showing the luminous efficiency of the white light illumination system of the embodiment of Figure 1 and Comparative Example 2 operating at different currents. Referring to FIG. 3, curves 31 and 32 are luminous efficiency curves of the white light illumination system 10 and the second control in the forward current of 200 mA to 400 mA, respectively. It can be observed that the current is in the range of 200 mA to 400 mA, and the luminous efficiency of the white light illumination system 10 of the embodiment of FIG. 1A is higher than that of the second comparative example. In the second comparative example in which red light is used to provide red light, since the red fluorescent powder has low luminous efficiency, the luminous efficiency of the entire light-emitting device is not high. The white light illumination system 10 of the embodiment of FIG. 1A is provided with a first light-emitting wafer 12 (red light wafer), and the number of red light wafers is not limited to the number illustrated. In one embodiment, a red wafer 12 is used, thus replacing the function of a portion of the red phosphor and providing a portion of the red light required by the white illumination system 10. Since the luminous efficiency of the red light wafer is high, the overall luminous efficiency of the white light illumination system 10 is higher than that of the second comparative example.
圖4為圖1實施例之白光照明系統和對照例二的激發光譜。請參照圖4,白光照明系統10的激發光譜42是由七個第二發光晶片13(藍光晶片)和一個第一發光晶片12(紅光晶片)分別提供第二光L2(藍光)和第一紅光來激發第二波長轉換材料(黃色螢光粉)與第一波長轉換材料(紅色螢光粉)所形成。對照例二的激發光譜41是由八顆 藍光晶片激發黃色螢光粉與紅色螢光粉所形成。圖4顯示出激發光譜42與激發光譜41在光譜上的涵蓋範圍相似。 4 is an excitation spectrum of the white light illumination system of the embodiment of FIG. 1 and Comparative Example 2. Referring to FIG. 4, the excitation spectrum 42 of the white light illumination system 10 is provided with a second light L2 (blue light) and a first light emitting chip 12 (red light wafer) and a first light emitting chip 12 (red light), respectively. Red light is used to excite the second wavelength converting material (yellow phosphor) and the first wavelength converting material (red phosphor). The excitation spectrum 41 of Comparative Example 2 is composed of eight The blue light wafer is formed by exciting yellow phosphor powder and red phosphor powder. Figure 4 shows that the excitation spectrum 42 is spectrally similar to the excitation spectrum 41.
以下內容將舉出上述圖1實施例之白光照明系統之實驗的數據。需注意的是,下述之表一中所列的數據資料並非用以限定本發明,任何所屬技術領域中具有通常知識者在參照本發明之後,當可對其參數或設定作適當的更動,惟其仍應屬於本發明之範疇內。 The following will cite the data of the experiment of the white light illumination system of the above embodiment of Fig. 1. It should be noted that the data listed in Table 1 below is not intended to limit the present invention, and any one of ordinary skill in the art can make appropriate changes to its parameters or settings after referring to the present invention. However, it should still fall within the scope of the invention.
如表1所示,白光照明系統10相較於對照例二更可獲得較佳的發光效率。 As shown in Table 1, the white light illumination system 10 can obtain better luminous efficiency than the second embodiment.
圖6(A)、圖6(B)以及圖7為本發明之三個實施例之白光照明系統的電路示意圖。請先參照圖6(A),本實施例之白光照明系統61具有八個發光晶片,其中包括七個第二發光晶片63(藍光晶片)以及一個第一發光晶片62(紅光晶片),這八個發光晶片彼此以串聯的方式電性連接,使得白光照明系統61在工作時仍能發出色溫為3000K左右的白光。 6(A), 6(B) and 7 are circuit diagrams of a white light illumination system according to three embodiments of the present invention. Referring first to FIG. 6(A), the white light illumination system 61 of the present embodiment has eight light-emitting wafers including seven second light-emitting wafers 63 (blue light wafers) and one first light-emitting wafer 62 (red light wafer). The eight light-emitting wafers are electrically connected to each other in series such that the white light illumination system 61 can still emit white light having a color temperature of about 3000 K while in operation.
接著,請參照圖6(B),本實施例之白光照明系統65可包括多個但體積較小的第二發光晶片64(藍光晶片),或者是使用體積相同的多個第二發光晶片64(藍光晶片),然後搭配一個第一發光晶片62(紅光晶片)。具體而言,本實施例之白光照明系統65包括兩組並聯的第二發 光晶片(藍光晶片)串65a,第二發光晶片(藍光晶片)串包含七個彼此串聯的藍光晶片,而兩組第二發光晶片(藍光晶片)串65a並聯後再與第一發光晶片62(紅光晶片)串聯,使得白光照明系統65在工作時仍能發出色溫為3000K左右的白光。 Next, referring to FIG. 6(B), the white light illumination system 65 of the present embodiment may include a plurality of second light-emitting chips 64 (blue light wafers) having a smaller volume, or a plurality of second light-emitting chips 64 having the same volume. (Blue light wafer), then with a first light emitting chip 62 (red light wafer). Specifically, the white light illumination system 65 of the embodiment includes two sets of second transmissions in parallel. The optical wafer (blue light wafer) string 65a, the second light emitting wafer (blue light wafer) string comprises seven blue light wafers connected in series, and the two sets of second light emitting wafer (blue light wafer) strings 65a are connected in parallel to the first light emitting wafer 62 ( The red light wafers are connected in series so that the white light illumination system 65 can still emit white light having a color temperature of about 3000 K while in operation.
然後請參照圖7,本實施例之白光照明系統71具有八個發光晶片,其中包括七個第二發光晶片73(藍光晶片)和以及一個第一發光晶片72(紅光晶片)。這八個發光晶片彼此以串聯的方式電性連接,其中紅光晶片與藍光晶片的排列方式以及晶片的數量並不限於圖示的實施例,但較佳的實施方式為第二發光晶片73(藍光晶片)包圍第一發光晶片72(紅光晶片),以獲得較佳的色均勻性。本實施例之白光照明系統71可包含散熱模組(圖中未繪出),如此可避免系統因高溫而造成藍光晶片與紅光晶片亮度衰減不一致,進而導致色偏移的現象。 Referring then to Figure 7, the white light illumination system 71 of the present embodiment has eight light emitting wafers including seven second light emitting wafers 73 (blue light wafers) and one first light emitting wafer 72 (red light wafer). The eight illuminating wafers are electrically connected to each other in series. The arrangement of the red and blue ray wafers and the number of wafers are not limited to the illustrated embodiment, but the preferred embodiment is the second illuminating wafer 73 ( The blue light wafer) surrounds the first light emitting wafer 72 (red light wafer) to obtain better color uniformity. The white light illumination system 71 of the present embodiment may include a heat dissipation module (not shown), so as to avoid a phenomenon in which the brightness of the blue light wafer and the red light wafer are inconsistent due to high temperature, thereby causing color shift.
在本實施例中,白光照明系統71還可包含驅動電路或驅動器(圖中未繪出),例如可變電阻、電容或是脈衝寬度調變系統(Pulse Width Modulation system,PWM system),以用於調控藍光晶片與紅光晶片於高溫下色偏移的現象,或是調控藍光晶片與紅光晶片於白光照明系統71中的發光比例,使白光色溫能維持在3000K左右。此外,白光照明系統71可使用於不同種的照明裝置中,例如燈泡球、燈管或車頭燈等照明裝置。 In this embodiment, the white light illumination system 71 may further include a driving circuit or a driver (not shown), such as a variable resistor, a capacitor, or a pulse width modulation system (PWM system). In order to regulate the color shift of the blue light wafer and the red light wafer at a high temperature, or to adjust the light emission ratio of the blue light wafer and the red light crystal in the white light illumination system 71, the white light color temperature can be maintained at about 3000K. In addition, the white light illumination system 71 can be used in different types of lighting devices, such as lighting devices such as bulb balls, lamps, or headlights.
綜上所述,本發明一實施例之白光照明系統利用第一 發光晶片(例如紅光晶片)和第二發光晶片(例如藍光晶片)並搭配波長轉換單元以產生白光。其中,第一發光晶片和第二發光晶片維持白光照明系統的高發光效率,而波長轉換單元使白光照明系統在高工作溫度下的色偏差減低。進一步來說,本發明一實施例之白光照明系統所需的紅光中,一部分由紅光晶片提供,進而保證了較高的發光效率。另一部分的紅光由紅色螢光粉提供,使得隨工作溫度升高產生的色偏差減少。藉由紅光晶片和紅色螢光粉二者的優點,本發明一實施例之白光照明系統達到較高的發光效率和較低的色偏差。 In summary, the white light illumination system of the embodiment of the present invention utilizes the first A light emitting wafer (such as a red light wafer) and a second light emitting wafer (such as a blue light wafer) are used in conjunction with a wavelength conversion unit to generate white light. Wherein, the first illuminating wafer and the second illuminating wafer maintain high luminous efficiency of the white illuminating system, and the wavelength converting unit reduces the color deviation of the white illuminating system at a high operating temperature. Further, a portion of the red light required for the white light illumination system of one embodiment of the present invention is provided by a red light wafer, thereby ensuring high luminous efficiency. Another portion of the red light is provided by the red phosphor, such that the color deviation as a function of operating temperature is reduced. By virtue of both the red light crystal and the red fluorescent powder, the white light illumination system of one embodiment of the present invention achieves higher luminous efficiency and lower color deviation.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
10、50、61、65、71‧‧‧白光照明系統 10, 50, 61, 65, 71‧‧‧ white light illumination system
11‧‧‧基座 11‧‧‧Base
12、52、62、72‧‧‧第一發光晶片 12, 52, 62, 72‧‧‧ first illuminating wafer
13、53、63、64、73‧‧‧第二發光晶片 13, 53, 63, 64, 73‧‧‧ second illuminating wafer
14‧‧‧波長轉換單元 14‧‧‧wavelength conversion unit
14a‧‧‧第一波長轉換材料 14a‧‧‧First wavelength conversion material
14b‧‧‧第二波長轉換材料 14b‧‧‧second wavelength conversion material
65a‧‧‧第二發光晶片串 65a‧‧‧Second light-emitting chip string
L1‧‧‧第一光 L1‧‧‧First light
L2‧‧‧第二光 L2‧‧‧second light
L3‧‧‧激發光束 L3‧‧‧Excitation beam
L3’‧‧‧第二紅光 L3’‧‧‧second red light
L3”‧‧‧第三光(黃光) L3”‧‧‧ Third Light (Yellow Light)
圖1A為本發明一實施例之白光照明系統示意圖。 FIG. 1A is a schematic diagram of a white light illumination system according to an embodiment of the invention.
圖1B則是沿著圖1A中I-I’連線之剖面示意圖。 Fig. 1B is a schematic cross-sectional view taken along line I-I' of Fig. 1A.
圖2為圖1實施例之白光照明系統和對照例一在較高工作溫度下的色偏移在CIE色度坐標系中的對比圖。 2 is a comparison diagram of the color shift of the white light illumination system of the embodiment of FIG. 1 and the control example 1 at a higher operating temperature in a CIE chromaticity coordinate system.
圖3顯示圖1實施例之白光照明系統和對照例二在不同電流下工作的發光效率曲線。 Figure 3 is a graph showing the luminous efficiency of the white light illumination system of the embodiment of Figure 1 and Comparative Example 2 operating at different currents.
圖4為圖1實施例之白光照明系統和對照例二的激發光譜。 4 is an excitation spectrum of the white light illumination system of the embodiment of FIG. 1 and Comparative Example 2.
圖5為本發明的另一實施例之白光照明系統示意圖。 FIG. 5 is a schematic diagram of a white light illumination system according to another embodiment of the present invention.
圖6(A)、圖6(B)以及圖7為本發明之三個實施例之白光照明系統的電路示意圖。 6(A), 6(B) and 7 are circuit diagrams of a white light illumination system according to three embodiments of the present invention.
10‧‧‧白光照明系統 10‧‧‧White lighting system
11‧‧‧基座 11‧‧‧Base
12‧‧‧第一發光晶片 12‧‧‧First illuminating chip
13‧‧‧第二發光晶片 13‧‧‧Second light-emitting chip
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CN109860162B (en) * | 2018-11-16 | 2022-01-14 | 广州市巨宏光电有限公司 | Solar spectrum-imitated LED lamp |
CN111050452B (en) * | 2019-12-06 | 2021-11-30 | 广州星迪智能光电科技有限公司 | Color temperature consistency matching method |
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CN201039523Y (en) * | 2007-04-27 | 2008-03-19 | 宁波升谱光电半导体有限公司 | A high color index high-power white light LED part |
TW201106460A (en) * | 2009-08-12 | 2011-02-16 | Visera Technologies Co Ltd | White light-emitting diode packages with tunable color temperature |
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