TWI540223B - 用於錫及錫合金沈積之自催化電鍍浴組合物 - Google Patents
用於錫及錫合金沈積之自催化電鍍浴組合物 Download PDFInfo
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- TWI540223B TWI540223B TW101102641A TW101102641A TWI540223B TW I540223 B TWI540223 B TW I540223B TW 101102641 A TW101102641 A TW 101102641A TW 101102641 A TW101102641 A TW 101102641A TW I540223 B TWI540223 B TW I540223B
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- Taiwan
- Prior art keywords
- group
- plating bath
- bath composition
- tin
- tin plating
- Prior art date
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- 238000007747 plating Methods 0.000 title claims description 59
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims description 55
- 239000000203 mixture Substances 0.000 title claims description 47
- 229910001128 Sn alloy Inorganic materials 0.000 title claims description 19
- 230000008021 deposition Effects 0.000 title description 8
- 150000001875 compounds Chemical class 0.000 claims description 30
- 150000002500 ions Chemical class 0.000 claims description 26
- -1 nitro, methyl Chemical group 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000654 additive Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 230000000087 stabilizing effect Effects 0.000 claims description 12
- 239000008139 complexing agent Substances 0.000 claims description 11
- 150000003839 salts Chemical class 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- 230000000996 additive effect Effects 0.000 claims description 9
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical group OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 claims description 9
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 8
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 7
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical group NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 5
- 125000003277 amino group Chemical group 0.000 claims description 5
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- SRSXLGNVWSONIS-UHFFFAOYSA-M benzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-M 0.000 claims description 3
- 229920001021 polysulfide Polymers 0.000 claims description 3
- 239000005077 polysulfide Substances 0.000 claims description 3
- 150000008117 polysulfides Polymers 0.000 claims description 3
- 150000004764 thiosulfuric acid derivatives Chemical class 0.000 claims description 3
- 150000007513 acids Chemical class 0.000 claims description 2
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical class [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 claims description 2
- 150000002019 disulfides Chemical class 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical class OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- 229910002651 NO3 Inorganic materials 0.000 claims 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims 1
- 235000021317 phosphate Nutrition 0.000 claims 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims 1
- 239000003381 stabilizer Substances 0.000 claims 1
- 150000003568 thioethers Chemical class 0.000 claims 1
- 238000009713 electroplating Methods 0.000 description 23
- 239000010936 titanium Substances 0.000 description 14
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 7
- 238000007654 immersion Methods 0.000 description 7
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 6
- 229910052708 sodium Inorganic materials 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- 239000003638 chemical reducing agent Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 235000015165 citric acid Nutrition 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 229960003975 potassium Drugs 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 3
- 235000019345 sodium thiosulphate Nutrition 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229960003330 pentetic acid Drugs 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 239000001508 potassium citrate Substances 0.000 description 2
- 229960002635 potassium citrate Drugs 0.000 description 2
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 2
- 235000011082 potassium citrates Nutrition 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 150000004763 sulfides Chemical class 0.000 description 2
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 2
- 150000003606 tin compounds Chemical class 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 150000003609 titanium compounds Chemical class 0.000 description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- NGCDGPPKVSZGRR-UHFFFAOYSA-J 1,4,6,9-tetraoxa-5-stannaspiro[4.4]nonane-2,3,7,8-tetrone Chemical compound [Sn+4].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O NGCDGPPKVSZGRR-UHFFFAOYSA-J 0.000 description 1
- GEZAUFNYMZVOFV-UHFFFAOYSA-J 2-[(2-oxo-1,3,2$l^{5},4$l^{2}-dioxaphosphastannetan-2-yl)oxy]-1,3,2$l^{5},4$l^{2}-dioxaphosphastannetane 2-oxide Chemical compound [Sn+2].[Sn+2].[O-]P([O-])(=O)OP([O-])([O-])=O GEZAUFNYMZVOFV-UHFFFAOYSA-J 0.000 description 1
- RAEOEMDZDMCHJA-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-[2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]ethyl]amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CCN(CC(O)=O)CC(O)=O)CC(O)=O RAEOEMDZDMCHJA-UHFFFAOYSA-N 0.000 description 1
- UPPLJLAHMKABPR-UHFFFAOYSA-H 2-hydroxypropane-1,2,3-tricarboxylate;nickel(2+) Chemical compound [Ni+2].[Ni+2].[Ni+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O UPPLJLAHMKABPR-UHFFFAOYSA-H 0.000 description 1
- CQMNNMLVXSWLCH-UHFFFAOYSA-B 2-hydroxypropane-1,2,3-tricarboxylate;tin(4+) Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O CQMNNMLVXSWLCH-UHFFFAOYSA-B 0.000 description 1
- RYKLZUPYJFFNRR-UHFFFAOYSA-N 3-hydroxypiperidin-2-one Chemical compound OC1CCCNC1=O RYKLZUPYJFFNRR-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- QGJWIOHZTAJTAI-UHFFFAOYSA-K CS(=O)(=O)[O-].[Ti+3].CS(=O)(=O)[O-].CS(=O)(=O)[O-] Chemical compound CS(=O)(=O)[O-].[Ti+3].CS(=O)(=O)[O-].CS(=O)(=O)[O-] QGJWIOHZTAJTAI-UHFFFAOYSA-K 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical class SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-L Phosphate ion(2-) Chemical compound OP([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-L 0.000 description 1
- 229920000388 Polyphosphate Polymers 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- XYXNTHIYBIDHGM-UHFFFAOYSA-N ammonium thiosulfate Chemical compound [NH4+].[NH4+].[O-]S([O-])(=O)=S XYXNTHIYBIDHGM-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- VYLVYHXQOHJDJL-UHFFFAOYSA-K cerium trichloride Chemical compound Cl[Ce](Cl)Cl VYLVYHXQOHJDJL-UHFFFAOYSA-K 0.000 description 1
- DLNAGPYXDXKSDK-UHFFFAOYSA-K cerium(3+);2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [Ce+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O DLNAGPYXDXKSDK-UHFFFAOYSA-K 0.000 description 1
- XPQVQIJYDXCEKC-UHFFFAOYSA-K cerium(3+);methanesulfonate Chemical compound [Ce+3].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O XPQVQIJYDXCEKC-UHFFFAOYSA-K 0.000 description 1
- VGBWDOLBWVJTRZ-UHFFFAOYSA-K cerium(3+);triacetate Chemical compound [Ce+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VGBWDOLBWVJTRZ-UHFFFAOYSA-K 0.000 description 1
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-M dihydrogenphosphate Chemical compound OP(O)([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-M 0.000 description 1
- GMKDNCQTOAHUQG-UHFFFAOYSA-L dilithium;dioxido-oxo-sulfanylidene-$l^{6}-sulfane Chemical compound [Li+].[Li+].[O-]S([O-])(=O)=S GMKDNCQTOAHUQG-UHFFFAOYSA-L 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- FGRVOLIFQGXPCT-UHFFFAOYSA-L dipotassium;dioxido-oxo-sulfanylidene-$l^{6}-sulfane Chemical compound [K+].[K+].[O-]S([O-])(=O)=S FGRVOLIFQGXPCT-UHFFFAOYSA-L 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052945 inorganic sulfide Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- CXIHYTLHIDQMGN-UHFFFAOYSA-L methanesulfonate;nickel(2+) Chemical compound [Ni+2].CS([O-])(=O)=O.CS([O-])(=O)=O CXIHYTLHIDQMGN-UHFFFAOYSA-L 0.000 description 1
- AICMYQIGFPHNCY-UHFFFAOYSA-J methanesulfonate;tin(4+) Chemical compound [Sn+4].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O AICMYQIGFPHNCY-UHFFFAOYSA-J 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229910000159 nickel phosphate Inorganic materials 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- JOCJYBPHESYFOK-UHFFFAOYSA-K nickel(3+);phosphate Chemical compound [Ni+3].[O-]P([O-])([O-])=O JOCJYBPHESYFOK-UHFFFAOYSA-K 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000001205 polyphosphate Substances 0.000 description 1
- 235000011176 polyphosphates Nutrition 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- 229940071536 silver acetate Drugs 0.000 description 1
- 229940071575 silver citrate Drugs 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- FJOLTQXXWSRAIX-UHFFFAOYSA-K silver phosphate Chemical compound [Ag+].[Ag+].[Ag+].[O-]P([O-])([O-])=O FJOLTQXXWSRAIX-UHFFFAOYSA-K 0.000 description 1
- 229910000161 silver phosphate Inorganic materials 0.000 description 1
- 229940019931 silver phosphate Drugs 0.000 description 1
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 description 1
- 229910000367 silver sulfate Inorganic materials 0.000 description 1
- LMEWRZSPCQHBOB-UHFFFAOYSA-M silver;2-hydroxypropanoate Chemical compound [Ag+].CC(O)C([O-])=O LMEWRZSPCQHBOB-UHFFFAOYSA-M 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 150000003512 tertiary amines Chemical group 0.000 description 1
- VPKAOUKDMHJLAY-UHFFFAOYSA-J tetrasilver;phosphonato phosphate Chemical compound [Ag+].[Ag+].[Ag+].[Ag+].[O-]P([O-])(=O)OP([O-])([O-])=O VPKAOUKDMHJLAY-UHFFFAOYSA-J 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- DHCDFWKWKRSZHF-UHFFFAOYSA-L thiosulfate(2-) Chemical compound [O-]S([S-])(=O)=O DHCDFWKWKRSZHF-UHFFFAOYSA-L 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 description 1
- QUTYHQJYVDNJJA-UHFFFAOYSA-K trisilver;2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [Ag+].[Ag+].[Ag+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QUTYHQJYVDNJJA-UHFFFAOYSA-K 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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Description
本發明係關於一種用於錫及錫合金沈積之自催化電鍍浴組合物，及一種應用該自催化電鍍浴組合物之方法。本發明係關於製造諸如印刷電路板、IC基板及半導體晶圓之電子零件。
於諸如印刷電路板、IC基板及半導體晶圓之電子零件上的錫及錫合金層在稍後該等電子零件的製造步驟中用作可焊接及可黏結的修飾面層。
錫及錫合金層通常沈積於金屬接觸區域上，諸如接觸焊墊及凸塊結構。接觸區域通常由銅或銅合金製成。在可電接觸該等接觸焊墊用於沈積錫及錫合金層的情況下，該等層係藉由習知電鍍方法沈積。然而，在許多情況下無法電接觸個別接觸區域。在該等情況下需要應用無電電鍍方法。在工業中用於無電電鍍錫及錫合金層之所選方法為浸鍍。浸沒型電鍍之主要缺陷為錫或錫合金沈積物之厚度有限。浸鍍係基於錫離子與待電鍍之金屬銅接觸區域之間的交換。浸沒型電鍍錫或錫合金層時，隨著錫層厚度增加，沈積速率顯著降低，因為生長之Sn層防礙Sn對Cu之交換。因此對於許多實際應用，使用浸沒方法使錫層沈積超過1.0 μm之厚度可能花費太多時間。
在需要更厚的錫層或錫合金層的情形中，需要使用自催化型無電電鍍方法。用於自催化電鍍錫或錫合金之電鍍浴
組合物包含還原劑。
專利文獻US 5,364,459揭示用於自催化沈積錫之無電電鍍浴組合物，該等浴組合物包含作為還原劑之Ti3+離子、諸如檸檬酸或EDTA之鹽的錯合劑、Sn2+及Pb2+離子及作為pH值調節劑之碳酸根離子。
專利文獻US 5,360,471揭示用於焊接沈積之無電電鍍浴組合物，該等浴組合物包含作為還原劑之Ti3+離子、諸如檸檬酸及EDTA之鹽的錯合劑、Sn2+離子及作為pH值調節劑之氨。
「Autocatalytische Zinnabscheidung」(「Autocatyltic Tin Deposition」),M.E.Warwick,B.F.Müller,Metall，第36卷，1982，第955至958頁揭示由作為還原劑之TiCl3、作為錯合劑之檸檬酸及EDTA之鹽、乙酸鈉、Sn2+離子、苯磺酸及作為pH值調節劑之氨組成之自催化錫電鍍浴。
WO 2009/157334 A1中揭示用於沈積錫之自催化電鍍浴，其包含水溶性錫化合物、水溶性鈦化合物、有機錯合劑及選自由硫醇及硫化物組成之群的有機硫化合物。
WO 2008/081637 A1中揭示包含水溶性錫化合物、水溶性鈦化合物及含有三價磷之有機錯合劑之自催化錫電鍍浴。
此項技術中已知之自催化錫電鍍浴組合物在防止不希望的錫析出與實際應用所需之足夠沈積速度之間無法取得平衡。
因此本發明之目標為提供一種用於沈積錫及錫合金之自催化電鍍浴組合物，其對於不希望的錫析出或浴組分沈澱保持穩定，且同時提供在製造諸如印刷電路板、IC基板之電子零件及對半導體晶圓進行金屬化的方法中允許使用該自催化電鍍浴組合物的沈積速度。
此目標可由用於沈積錫及錫合金之水性自催化電鍍浴組合物實現，該組合物包含
-Sn2+離子源
-Ti3+離子源
-視情況選用之無機五價磷源
-選自式(1)、式(2)化合物及其混合物之穩定添加劑
其中式(1)之R1、R2、R3、R4、R5、R6、R7及R8與式(2)之R9、R10、R11及R12係獨立地選自由氫、鹵素、硝基、甲基、乙基、1-丙基、2-丙基、苯基、羥基、磺酸基、苯基磺酸基、胺基、醯胺基、羧酸基組成之群且
R13係選自氫及磺酸基，-至少一種有機錯合劑及-視情況選用之選自銀、鉍及鎳之額外金屬離子源。
本發明係關於一種無電錫電鍍浴組合物及一種應用該等無電錫電鍍浴組合物的方法。
用於沈積錫及錫合金之水性自催化電鍍浴組合物包含
-Sn2+離子源
-Ti3+離子源
-視情況選用之無機五價磷源
-選自式(1)、式(2)化合物及其混合物之穩定添加劑
其中式(1)之R1、R2、R3、R4、R5、R6、R7及R8與式(2)之R9、R10、R11及R12係獨立地選自由氫、鹵素、硝基、甲基、乙基、1-丙基、2-丙基、苯基、羥基、磺酸基、苯基磺酸基、胺基、醯胺基、羧酸基組成之群且
R13係選自氫及磺酸基，-至少一種有機錯合劑及-視情況選用之選自銀、鉍及鎳之額外金屬離子源。
Sn2+離子源係選自水溶性Sn2+化合物。較佳的水溶性Sn2+化合物係選自包含SnCl2、SnSO4、甲烷磺酸錫、乙酸錫、檸檬酸錫、乙二酸錫及焦磷酸錫之群。自催化電鍍浴中之Sn2+離子的濃度範圍為2 g/l至30 g/l，更佳為4 g/l至15 g/l。
自催化電鍍浴中之還原劑為較佳作為水溶性Ti3+化合物添加之Ti3+離子。較佳的Ti3+化合物係選自包含TiCl3、Ti2(SO4)3、TiI3及甲烷磺酸鈦(III)之群。自催化電鍍浴中之Ti3+離子的濃度範圍為0.5 g/l至20.0 g/l，更佳為1.8 g/l至5.0 g/l。或者，本發明之浴可由Ti4+離子源或Ti3+與Ti4+離子之混合源構成。可在使用之前如US 6,338,787中所述藉由電化學方法使Ti4+離子還原為Ti3+離子來活化該浴。
存在於自催化電鍍浴中之視情況選用之無機五價磷離子源係選自磷酸根、磷酸氫根、磷酸二氫根、焦磷酸根或諸如[P3O7]5-之高級無機聚磷酸根的酸及鹽。在無機五價磷化合物作為鹽添加之情況下，相對離子係選自包含鋰、鈉、鉀、銨及錫之群。自催化電鍍浴中之無機五價磷離子的濃度範圍為20 g/l至500 g/l，更佳為50 g/l至200 g/l。
該至少一種穩定添加劑係選自式(1)、式(2)之化合物及其混合物。
更佳的穩定添加劑係選自式(1)化合物，其中R1、R2、R3、R4、R5、R6、R7及R8係獨立地選自由氫、鹵素、硝基、甲基、乙基、1-丙基、2-丙基、苯基、羥基、磺酸基、苯基磺酸基、胺基、醯胺基及羧酸基組成之群。
甚至更佳之穩定添加劑係選自式(1)化合物，其中式(1)化合物之成對殘基R1與R8、R2與R7、R3與R6、R4與R5係獨立地選自由氫、甲基、乙基、1-丙基、2-丙基、羥基、磺酸基、苯基磺酸基、胺基、醯胺基及羧酸基組成之群的同一部分。
最佳的穩定添加劑係選自式(1)化合物，其中成對殘基R1與R8、R2與R7、R3與R6、R4與R5係獨立地選自由氫、
甲基、磺酸基及苯基磺酸基組成之群。
式(1)及式(2)之穩定添加劑與諸如HCl、H2SO4及甲烷磺酸之酸的加合物可用於本發明之自催化電鍍浴組合物。
在式(1)及式(2)之穩定添加劑的一或多種殘基選自磺酸基、苯基磺酸基及羧酸基的情況下，該等殘基含有另一個氫基或可呈鹽形式使用。適用於該等鹽之相對離子係選自由鋰、鈉、鉀及銨組成之群。
式(1)、式(2)之穩定添加劑及其混合物的濃度範圍為0.1 mg/l至200 mg/l，更佳為0.5 mg/l至100 mg/l且最佳為1 mg/l至50 mg/l。
該至少一種有機錯合劑係選自胺基羧酸、羥基羧酸及聚羧酸。胺基羧酸為具有至少一個羧基及至少一個胺部分之羧酸。胺部分可為一級、二級或三級胺部分。羥基羧酸為每分子具有至少一個羧基及至少一個羥基部分的羧酸。聚羧酸為每分子具有一個以上羧基部分之羧酸。
作為有機錯合劑之較佳的胺基羧酸係選自包含甘胺酸、乙二胺四乙酸(EDTA)、二伸乙三胺五乙酸(DTPA)、三伸乙四胺六乙酸(TTHA)及其鹽之群。
作為有機錯合劑之較佳的羥基羧酸係選自具有C1至C6烷基之脂族羥基羧酸。作為錯合劑之最佳的羥基羧酸係選自由乙醇酸、乳酸、檸檬酸、酒石酸、蘋果酸及其鹽組成之群。
作為有機錯合劑之較佳的聚羧酸係選自包含乙二酸、丙二酸、丁二酸及其鹽之群。
自催化電鍍浴中該至少一種有機錯合劑或其鹽之濃度範圍為2 g/l至60 g/l，更佳為5 g/l至20 g/l。
在沈積錫合金的情況下，將視情況選用之金屬離子添加至自催化電鍍浴。接觸區域上作為可焊接或可黏結沈積物之典型錫合金為錫銀合金、錫鉍合金及錫鎳合金。視情況選用之Ag+、Bi3+及Ni2+離子源係選自水溶性Ag+、Bi3+及Ni+2化合物。較佳的水溶性Ag+化合物係選自包含硝酸銀、硫酸銀、氧化銀、乙酸銀、檸檬酸銀、乳酸銀、磷酸銀、焦磷酸銀及甲烷磺酸銀之群。較佳的水溶性Bi3+化合物係選自包含硝酸鉍、氧化鉍、甲烷磺酸鉍、乙酸鉍、碳酸鉍、氯化鉍及檸檬酸鉍之群。較佳的水溶性Ni2+化合物源係選自包含氯化鎳、硫酸鎳、乙酸鎳、檸檬酸鎳、磷酸鎳、焦磷酸鎳及甲烷磺酸鎳之群。自催化電鍍浴中視情況選用之Ag+、Bi3+及Ni2+離子的濃度範圍為0.01 g/l至10 g/l，更佳為0.02 g/l至5 g/l。
在本發明之另一實施例中，水性自催化電鍍浴組合物進一步包含用作pH值調節劑之含N化合物，該含N化合物係選自式(3)化合物：H2N(CH2CH2NH)nH 式(3)其中n範圍介於0至4。
用作pH值調節劑之該含N化合物在有機錯合劑為胺基羧酸時尤其較佳。
視情況選用之式(3)之含N化合物的濃度範圍為1 g/l至100 g/l，更佳為5 g/l至50 g/l。
在本發明之另一實施例中，水性自催化電鍍浴組合物進一步包含無機含硫化合物，其選自包含硫化物、二硫化物、聚硫化物、硫代硫酸鹽及其混合物之群。適合之無機硫化物、二硫化物及聚硫化物化合物係選自其與鋰、鈉、鉀及銨形成之各別鹽。適合之硫代硫酸鹽化合物係選自由硫代硫酸鋰、硫代硫酸鈉、硫代硫酸鉀及硫代硫酸銨組成之群。硫代硫酸鹽為較佳的無機含硫化合物。無機含硫化合物的濃度範圍為1至1000 mg/l，更佳為5至200 mg/l。
本發明之水性自催化電鍍浴組合物可用於水平或垂直電鍍設備。
典型的電鍍預處理概述如下：首先以蝕刻清潔劑清潔具有金屬接觸區域之基板，該蝕刻清潔劑較佳包含H2SO4。接著，藉由將基板浸入電鍍浴中或將電鍍浴噴霧至基板上使基板與本發明之電鍍浴接觸。或者，可在基板與本發明之電鍍浴接觸之前將基板暴露於活化浴。在活化浴中，通常藉由浸沒步驟將另一金屬沈積於銅上。該金屬可為因其強催化活性而為人熟知的鈀，或可藉由浸沒錫浴沈積的錫。
基板與電鍍浴組合物接觸30 s至7200 s，更佳300 s至1800 s。電鍍浴之溫度在電鍍期間保持在40℃至95℃，更佳60℃至85℃之範圍內。
視情況，以防銹組合物後處理錫或錫合金沈積物，該組合物包含含磷化合物。適合在各方法步驟之間用水沖洗。
現在將參考以下非限制性實例說明本發明。
將具有由銅製成之表面區域的印刷電路板基板以包含硫酸之溶液微蝕刻(T=35℃，t=1 min)，以水沖洗且隨後浸沒於自催化錫電鍍浴中(T=70℃，t=15 min，攪拌)，以水再次沖洗且乾燥(T=60℃，t=15 min)。藉由X射線螢光(XRF)量測法測定沈積錫層之厚度。藉由錫層厚度除以電鍍時間計算電鍍速率。實際應用所需之電鍍速率為至少0.5 μm/15 min。
根據5級穩定數進一步對電鍍浴穩定性定等級，其中5類似於非常穩定的錫電鍍浴，亦即在電鍍浴使用期間沒有不希望的電鍍浴成分或金屬錫沈澱發生，且1類似於不穩定的電鍍浴，其中在加熱電鍍浴至60℃之所需電鍍浴溫度之前或期間發生不希望的金屬錫沈澱。
使用含有7.6 g/l SnCl2、51 ml水性TiCl3溶液(15 wt.-% TiCl3，10 wt.-% HCl)、184.8 g/l焦磷酸鉀、38.8 g/l檸檬酸鉀及100 mg/l硫代硫酸鈉之自催化錫電鍍浴。未添加穩定添加劑。
電鍍浴之穩定數為1。因此，不可能由此電鍍浴組合物電鍍錫。
添加5 mg/l式(1)化合物(其中R1及R8=甲基，R2、R3、R4、R5、R6及R7=H)之HCl加合物至實例1之電鍍浴組合物中。
電鍍浴之穩定數為5。錫電鍍速率為2.1 μm/15 min。
使用含有15 g/l SnCl2、90 ml TiCl3水溶液(15 wt.-% TiCl3，10 wt.-% HCl)、58.4 g/l焦磷酸鉀、61.3 g/l檸檬酸鉀、70 g/l EDTA及100 mg/l硫代硫酸鈉之自催化錫電鍍浴。使用乙二胺調整pH值至9.9。未添加穩定添加劑。
電鍍浴之穩定數為1。因此，不可能由此電鍍浴組合物電鍍錫。
添加10 mg/l式(1)化合物(其中R1及R8=甲基，R2、R3、R4、R5、R6及R7=H)的HCl加合物至實例3之電鍍浴組合物中。
電鍍浴之穩定數為4。錫電鍍速率為1.2 μm/15 min。
添加15 mg/l式(1)化合物(其中R3及R6=苯基磺酸基，R1、R2、R4、R5、R7及R8=H)及作為相對離子之鈉至實例3之電鍍浴組合物中。
電鍍浴之穩定數為4。錫電鍍速率為1.0 μm/15 min。
添加25 mg/l式(1)化合物(其中R1及R8=甲基且R3及R6=苯基磺酸基，R2、R4、R5及R7=H)及作為相對離子之鈉至實例3之電鍍浴組合物中。
電鍍浴之穩定數為5。錫電鍍速率為1.1 μm/15 min。
Claims (13)
- 一種水性自催化錫電鍍浴組合物，其包含水溶性Sn2+離子源、水溶性Ti3+離子源、至少一種有機錯合劑及選自由式(1)、式(2)化合物及其混合物組成之群的穩定添加劑
- 如請求項1之水性自催化錫電鍍浴組合物，其中式(1)化合物之成對殘基R1與R8、R2與R7、R3與R6、R4與R5係獨立地選自由氫、鹵素、硝基、甲基、乙基、1-丙基、2-丙基、苯基、羥基、磺酸基、苯基磺酸基、胺基、醯胺基及羧酸基組成之群的同一部分。
- 如請求項1或2之水性自催化錫電鍍浴組合物，其中式 (1)、式(2)之穩定劑添加劑及其混合物的濃度範圍為0.1 mg/l至200 mg/l。
- 如請求項1或2之水性自催化錫電鍍浴組合物，其中Sn2+離子之濃度範圍為2 g/l至30 g/l。
- 如請求項1或2之水性自催化錫電鍍浴組合物，其中該自催化電鍍浴中之Ti3+離子的濃度範圍為0.5 g/l至20 g/l。
- 如請求項1或2之水性自催化錫電鍍浴組合物，其中該至少一種有機錯合劑係選自由胺基羧酸、羥基羧酸及聚羧酸組成之群。
- 如請求項1或2之水性自催化錫電鍍浴組合物，其中該至少一種有機錯合劑之濃度範圍為2 g/l至60 g/l。
- 如請求項1或2之水性自催化錫電鍍浴組合物，其進一步包含無機五價磷離子源。
- 如請求項8之水性自催化錫電鍍浴組合物，其中該無機五價磷離子源係選自磷酸根、磷酸氫根、磷酸二氫根及焦磷酸根之酸及鹽。
- 如請求項8之水性自催化錫電鍍浴組合物，其中無機五價磷離子之濃度範圍為20 g/l至500 g/l。
- 如請求項1或2之水`自催化錫電鍍浴組合物，其進一步包含選自由硫化物、二硫化物、聚硫化物及硫代硫酸鹽組成之群的無機含硫化合物。
- 一種於基板上沈積錫及錫合金的方法，該方法包含以下步驟(i)提供具有金屬接觸區域之基板，及 (ii)使該基板與如請求項1至11中任一項之水性自催化電鍍浴組合物接觸。
- 如請求項12之方法，其進一步包含使該基板與微蝕刻組合物接觸，其中該步驟係在步驟(i)與(ii)之間進行。
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| EP11152524.2A EP2481835B1 (en) | 2011-01-28 | 2011-01-28 | Autocatalytic plating bath composition for deposition of tin and tin alloys |
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| US9469902B2 (en) * | 2014-02-18 | 2016-10-18 | Lam Research Corporation | Electroless deposition of continuous platinum layer |
| CN105002481A (zh) * | 2015-07-07 | 2015-10-28 | 苏州华日金菱机械有限公司 | 电镀液 |
| JP6980017B2 (ja) * | 2016-12-28 | 2021-12-15 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングAtotech Deutschland GmbH | 錫めっき浴および錫もしくは錫合金を基材の表面に析出させる方法 |
| MX2019014278A (es) * | 2017-06-01 | 2021-02-09 | Lumishield Tech Incorporated | Métodos y composiciones para deposición electroquímica de capas ricas en metal en soluciones acuosas. |
| US20220220617A1 (en) * | 2019-05-28 | 2022-07-14 | Atotech Deutschland Gmbh | Tin plating bath and a method for depositing tin or tin alloy onto a surface of a substrate |
| EP3770298A1 (en) | 2019-07-24 | 2021-01-27 | ATOTECH Deutschland GmbH | Tin plating bath and a method for depositing tin or tin alloy onto a surface of a substrate |
| EP3922753A1 (en) * | 2020-06-10 | 2021-12-15 | ATOTECH Deutschland GmbH | Electroless nickel or cobalt plating solution |
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| US4194913A (en) * | 1975-05-06 | 1980-03-25 | Amp Incorporated | Electroless tin and tin-lead alloy plating baths |
| US5173109A (en) * | 1990-06-04 | 1992-12-22 | Shipley Company Inc. | Process for forming reflowable immersion tin lead deposit |
| US5143544A (en) * | 1990-06-04 | 1992-09-01 | Shipley Company Inc. | Tin lead plating solution |
| US5169692A (en) * | 1991-11-19 | 1992-12-08 | Shipley Company Inc. | Tin lead process |
| US5360471A (en) * | 1992-08-05 | 1994-11-01 | Murata Manufacturing Co., Ltd. | Electroless solder plating bath |
| JP3116637B2 (ja) | 1993-03-12 | 2000-12-11 | 株式会社村田製作所 | 無電解めっき液 |
| JP3455709B2 (ja) | 1999-04-06 | 2003-10-14 | 株式会社大和化成研究所 | めっき方法とそれに用いるめっき液前駆体 |
| US6860981B2 (en) * | 2002-04-30 | 2005-03-01 | Technic, Inc. | Minimizing whisker growth in tin electrodeposits |
| JP4441726B2 (ja) * | 2003-01-24 | 2010-03-31 | 石原薬品株式会社 | スズ又はスズ合金の脂肪族スルホン酸メッキ浴の製造方法 |
| KR20080024525A (ko) * | 2005-07-11 | 2008-03-18 | 테크닉,인코포레이티드 | 주석 위스커 성장을 최소화시키는 성질 또는 특성을 갖는주석 전착물 |
| EP2472655B1 (en) * | 2006-12-15 | 2014-03-12 | Tokyo Ohka Kogyo Co., Ltd. | Negative electrode base member |
| KR101581265B1 (ko) * | 2006-12-27 | 2015-12-31 | 히타치가세이가부시끼가이샤 | 오목판 및 오목판을 이용하는 도체층 패턴을 갖는 기재 |
| WO2008081637A1 (ja) | 2006-12-27 | 2008-07-10 | Japan Pure Chemical Co., Ltd. | 還元型無電解スズめっき液及びそれを用いて得られたスズ皮膜 |
| JP5368442B2 (ja) | 2008-06-26 | 2013-12-18 | 日本高純度化学株式会社 | 還元型無電解スズめっき液及びそれを用いたスズ皮膜 |
| JP5640396B2 (ja) * | 2010-02-25 | 2014-12-17 | 日立化成株式会社 | パターンが施された金属箔の製造方法により得られた金属箔 |
| JP5574912B2 (ja) * | 2010-10-22 | 2014-08-20 | ローム・アンド・ハース電子材料株式会社 | スズめっき液 |
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| EP2481835A1 (en) | 2012-08-01 |
| KR101727358B1 (ko) | 2017-04-14 |
| CN103339287A (zh) | 2013-10-02 |
| CN103339287B (zh) | 2016-03-02 |
| US20130309404A1 (en) | 2013-11-21 |
| WO2012100982A1 (en) | 2012-08-02 |
| EP2481835B1 (en) | 2013-09-11 |
| TW201235508A (en) | 2012-09-01 |
| KR20140002708A (ko) | 2014-01-08 |
| US8801844B2 (en) | 2014-08-12 |
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