TWI514527B - Heat-resistant adhesive tape for semiconductor package manufacturing process - Google Patents
Heat-resistant adhesive tape for semiconductor package manufacturing process Download PDFInfo
- Publication number
- TWI514527B TWI514527B TW101101982A TW101101982A TWI514527B TW I514527 B TWI514527 B TW I514527B TW 101101982 A TW101101982 A TW 101101982A TW 101101982 A TW101101982 A TW 101101982A TW I514527 B TWI514527 B TW I514527B
- Authority
- TW
- Taiwan
- Prior art keywords
- adhesive
- heat
- resin
- adhesive tape
- adhesion
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 26
- 239000002390 adhesive tape Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title description 9
- 239000000853 adhesive Substances 0.000 claims description 55
- 230000001070 adhesive effect Effects 0.000 claims description 54
- -1 dimethyl siloxane Chemical class 0.000 claims description 23
- 239000012790 adhesive layer Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 14
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 12
- 239000010410 layer Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 5
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims 1
- 239000004945 silicone rubber Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 description 43
- 239000011347 resin Substances 0.000 description 43
- 229920001971 elastomer Polymers 0.000 description 31
- 239000005060 rubber Substances 0.000 description 31
- 238000007789 sealing Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 238000000465 moulding Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 229920002098 polyfluorene Polymers 0.000 description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 5
- 238000007259 addition reaction Methods 0.000 description 5
- 239000003963 antioxidant agent Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000003431 cross linking reagent Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 3
- 229930040373 Paraformaldehyde Natural products 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920006324 polyoxymethylene Polymers 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- GPBBNPPLBQIADY-UHFFFAOYSA-N 4,4-dimethyloxane Chemical compound CC1(C)CCOCC1 GPBBNPPLBQIADY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 125000000687 hydroquinonyl group Chemical group C1(O)=C(C=C(O)C=C1)* 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001230 polyarylate Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- WTFNSXYULBQCQV-UHFFFAOYSA-N $l^{1}-oxidanyloxymethane Chemical compound CO[O] WTFNSXYULBQCQV-UHFFFAOYSA-N 0.000 description 1
- PQXKWPLDPFFDJP-UHFFFAOYSA-N 2,3-dimethyloxirane Chemical compound CC1OC1C PQXKWPLDPFFDJP-UHFFFAOYSA-N 0.000 description 1
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BAPJBEWLBFYGME-UHFFFAOYSA-N acrylic acid methyl ester Natural products COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 150000002193 fatty amides Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003208 poly(ethylene sulfide) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2483/00—Presence of polysiloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/141—Feedstock
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Polymers & Plastics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesive Tapes (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
本發明係關於一種用於半導體封裝製程之耐熱性黏著帶。The present invention relates to a heat resistant adhesive tape for use in a semiconductor packaging process.
近年來,於LSI(Large Scale Integration,大型積體電路)之安裝技術中,CSP(Chip Size/Scale Package,晶片級封裝)技術受到關注。於該技術中,QFN(Quad Flat Non-leaded package,方形平面無引腳封裝)所代表之將引線端子裝入封裝內部之形態的封裝係於小型化與高積體方面備受關注之封裝形態之一。此種QFN之製造方法中,如下之製造方法近年來備受矚目,該方法係將複數個QFN用晶片整齊地排列於引線框架之封裝圖案區域之晶片焊墊上,並於模具之模穴內,利用密封樹脂成批密封後,藉由切斷而切開成個別之QFN結構物,藉此使引線框架每單位面積之生產性飛躍性地提高。In recent years, CSP (Chip Size/Scale Package) technology has attracted attention in the mounting technology of LSI (Large Scale Integration). In this technology, a package in which a lead terminal is housed inside a package, which is represented by a QFN (Quad Flat Non-leaded Package), is a package form that is attracting attention in terms of miniaturization and high integration. one. In the manufacturing method of such a QFN, the following manufacturing method has been attracting attention in recent years, in which a plurality of QFN wafers are neatly arranged on a wafer pad of a package pattern region of a lead frame, and in a cavity of the mold, After batch sealing with a sealing resin, the individual QFN structures are cut by cutting, whereby the productivity of the lead frame per unit area is drastically improved.
於此種成批密封複數個半導體晶片之QFN之製造方法中,樹脂密封時之成形模具所夾之區域僅為較封裝圖案區域向外側擴展之樹脂密封區域之外側。因此,於封裝圖案區域,特別是其中央部,無法以充分之壓力將外部引線面按壓至成形模具上,而極難抑制密封樹脂向外部引線側洩漏,從而容易產生QFN之端子等被樹脂包覆之問題。In the method of manufacturing a QFN in which a plurality of semiconductor wafers are sealed in a batch, the region where the molding die is sealed by the resin is only the outer side of the resin sealing region which is expanded outward from the package pattern region. Therefore, in the package pattern region, particularly the central portion thereof, the external lead surface cannot be pressed against the molding die with sufficient pressure, and it is extremely difficult to suppress leakage of the sealing resin to the external lead side, and it is easy to generate a QFN terminal or the like which is coated with a resin. Overwrite the problem.
因此,相對於如上所述之QFN之製造方法,認為如下之製造方法特別有效:於引線框架之外部引線側貼附黏著 帶,藉由利用該黏著帶之自身黏著力(遮蔽)之密封效果,而防止樹脂密封時之向外部引線側之樹脂洩漏。Therefore, with respect to the manufacturing method of the QFN as described above, the following manufacturing method is considered to be particularly effective: the adhesion is attached to the outer lead side of the lead frame. The tape prevents leakage of the resin to the external lead side at the time of resin sealing by utilizing the sealing effect of the adhesive tape itself (shielding).
於此種製造方法中,於引線框架上搭載半導體晶片後,或實施打線接合後,進行耐熱性黏著帶之貼合於操作方面實質上較為困難,因此較期待將耐熱性黏著帶於最初之階段貼合於引線框架之外部焊墊面上,其後經過半導體晶片之搭載步驟或打線接合之步驟,進行貼合直至利用密封樹脂之密封步驟為止。作為此種方法,提出有使用具有厚度為10 μm以下之黏著劑層之耐熱性黏著帶,可防止樹脂洩漏同時實施打線接合等一系列步驟之製造方法(參照專利文獻1)。In such a manufacturing method, after the semiconductor wafer is mounted on the lead frame, or after the wire bonding is performed, it is substantially difficult to perform the bonding of the heat-resistant adhesive tape. Therefore, it is expected that the heat-resistant adhesive is brought to the initial stage. The film is bonded to the outer pad surface of the lead frame, and then subjected to a step of mounting the semiconductor wafer or a wire bonding step, and is bonded until the sealing step by the sealing resin. As such a method, a heat-resistant adhesive tape having an adhesive layer having a thickness of 10 μm or less is used, and a series of steps such as wire bonding can be prevented while preventing resin leakage (see Patent Document 1).
專利文獻1:日本專利特開2002-184801號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2002-184801
於半導體裝置之製造方法中,於向引線框架貼附膠帶時,當產生貼附不良時,有時暫時剝離膠帶後進行再次貼合(回工)。此時,若膠帶之黏著力過高,則有於剝離時引線框架變形之虞。另一方面,於成形密封步驟中,若膠帶之黏著力過低,則無法發揮樹脂遮蔽性,而發生樹脂洩漏。因此,理想的是膠帶於常溫下之貼附時發揮低黏著力,於高溫下之成形步驟中發揮高黏著力。In the method of manufacturing a semiconductor device, when a tape is attached to the lead frame, when a tape failure occurs, the tape may be temporarily peeled off and then reattached (reworked). At this time, if the adhesive force of the tape is too high, there is a possibility that the lead frame is deformed at the time of peeling. On the other hand, in the forming and sealing step, if the adhesive force of the tape is too low, the resin shielding property cannot be exhibited, and resin leakage occurs. Therefore, it is desirable that the tape exerts a low adhesive force when attached at a normal temperature and exhibits a high adhesive force in a molding step at a high temperature.
因此,本發明之目的在於提供一種半導體封裝製程用耐熱性黏著帶,其係用於半導體封裝製程者,並且於常溫下之貼附時之回工性優異,且於高溫環境下之樹脂密封步驟 中可防止樹脂洩漏。Accordingly, it is an object of the present invention to provide a heat-resistant adhesive tape for a semiconductor package process which is used in a semiconductor packaging process and which is excellent in workability at the time of attachment at a normal temperature and a resin sealing step in a high temperature environment. Prevents resin leakage.
本發明者等人為了實現上述目的,對耐熱性黏著帶之材料、構成等進行了努力研究。結果得知,藉由採用以下之黏著帶可實現上述目的。In order to achieve the above object, the inventors of the present invention have made an effort to study the material and structure of the heat-resistant adhesive tape. As a result, it was found that the above object can be achieved by using the following adhesive tape.
1.一種半導體封裝製程用耐熱性黏著帶,其係於樹脂密封半導體晶片時貼附於引線框架上而使用者,並且上述耐熱性黏著帶具有基材層與黏著劑層,於常溫下對Cu板具有0.01~0.30 N/20 mm之微黏著性,於高溫環境下黏著力提高為0.50 N/20 mm以上。A heat-resistant adhesive tape for a semiconductor package process, which is attached to a lead frame when a resin-sealed semiconductor wafer is used by a user, and the heat-resistant adhesive tape has a substrate layer and an adhesive layer, and is Cu at a normal temperature. The board has a micro-adhesion of 0.01 to 0.30 N/20 mm, and the adhesion is increased to 0.50 N/20 mm or more in a high temperature environment.
2.如1之半導體封裝製程用耐熱性黏著帶,其中於上述黏著劑層中,使用聚矽氧橡膠成分比率為80重量%以上之聚矽氧黏著劑。2. The heat-resistant adhesive tape for a semiconductor package process according to 1, wherein a polyoxyxene adhesive having a polyoxyxene rubber component ratio of 80% by weight or more is used in the adhesive layer.
3.如1或2之半導體封裝製程用耐熱性黏著帶,其中於上述黏著劑層中,使用二甲基矽氧烷主鏈之甲基之一部分經苯基取代之聚矽氧黏著劑。3. The heat-resistant adhesive tape for a semiconductor package process according to 1 or 2, wherein a polyphenylene oxide adhesive in which a part of a methyl group of a dimethyl siloxane main chain is substituted with a phenyl group is used in the above adhesive layer.
上述本發明之耐熱性黏著帶係於密封搭載於金屬製之引線框架上之半導體晶片時,貼合於引線框架上而使用,以於常溫下具有微黏著性,於例如200℃之加熱後之175℃之高溫環境下黏著力提高之方式設計。The heat-resistant adhesive tape of the present invention is used by being bonded to a lead frame when sealing a semiconductor wafer mounted on a lead frame made of metal, and has a microadhesive property at room temperature, for example, after heating at 200 ° C. Designed in a high-temperature environment at 175 ° C.
因此,可於常溫下同時實現對引線框架之貼附性與回工性,且於高溫之成形步驟中發揮不使樹脂洩漏發生之良好之樹脂遮蔽性。Therefore, the adhesion to the lead frame and the workability can be simultaneously achieved at normal temperature, and the resin shielding property which does not cause resin leakage can be exhibited in the high-temperature molding step.
本發明之半導體封裝製程用耐熱性黏著帶係於樹脂密封半導體晶片時貼附於引線框架上而使用者,並且係於基材層上設置黏著劑層而成,於常溫下具有微黏著性,於高溫環境下黏著力提高。The heat-resistant adhesive tape for a semiconductor package process of the present invention is attached to a lead frame when a resin-sealed semiconductor wafer is attached to a lead frame, and is provided with an adhesive layer on the base material layer, and has a micro-adhesive property at a normal temperature. Adhesion increases in high temperature environments.
如此,可藉由於常溫與高溫之間改變黏著劑層之性質、即關於黏著性之性質,而同時實現製造半導體封裝時之遮蔽引線框架時之回工性與樹脂密封步驟時之防止樹脂洩漏。Thus, the reworkability at the time of manufacturing the semiconductor package and the prevention of resin leakage at the time of the resin sealing step can be simultaneously achieved by changing the properties of the adhesive layer between the normal temperature and the high temperature, that is, regarding the adhesive property.
本發明之半導體封裝製程用耐熱性黏著帶係於樹脂密封步驟時之加熱中,亦必須發揮所需之性質。The heat-resistant adhesive tape for a semiconductor package process of the present invention is required to exhibit the desired properties in the heating at the time of the resin sealing step.
因此,作為本發明之半導體封裝製程用耐熱性黏著帶之基材層,必須具有熔點為180℃,較佳為260℃以上之耐熱性,例如可列舉:聚對苯二甲酸乙二酯(PET,polyethylene terephthalate)膜、聚萘二甲酸乙二酯(PEN,polyethylene naphthalate)膜、聚醚碸(PES,Polyether sulfone)膜、聚醚醯亞胺(PEI,polyether imide)膜、聚碸(PSF,polysulfone)膜、聚苯硫醚(PPS,Polyphenylenesulfide)膜、聚醚醚酮(PEEK,polyether ether ketone)膜、聚芳酯(PAR,Polyarylate)膜、芳族聚醯胺膜、聚醯亞胺膜、液晶聚合物(LCP,Liquid Crystal Polymer)膜。Therefore, the base material layer of the heat-resistant adhesive tape for a semiconductor package process of the present invention must have a heat resistance of a melting point of 180 ° C, preferably 260 ° C or higher, and examples thereof include polyethylene terephthalate (PET). , polyethylene terephthalate) film, polyethylene naphthalate film (PEN, polyethylene naphthalate) film, polyether oxime (PES, Polyether sulfone) film, polyether phthalimide (PEI) film, polyfluorene (PSF, Polysulfone) membrane, polyphenylene sulfide (PPS) membrane, polyether ether ketone (PEEK) membrane, polyarylate (PAR, Polyarylate) membrane, aromatic polyamide membrane, polyimine membrane Liquid crystal polymer (LCP) film.
作為基材層之厚度,考慮到加工性或回工時等之操作性等,而設為5~250 μm,較佳為20~100 μm。The thickness of the base material layer is 5 to 250 μm, preferably 20 to 100 μm, in consideration of workability such as workability and rework.
作為本發明中之黏著劑層,必須具備與上述基材層相同 之耐熱性,例如包含聚矽氧系黏著劑之黏著劑層。As the adhesive layer in the present invention, it is necessary to have the same as the above-mentioned substrate layer The heat resistance is, for example, an adhesive layer containing a polyoxygen-based adhesive.
該黏著劑層所必需之性質為於常溫下具有微黏著性且於高溫下黏著力提高之性質,且常溫下之黏著力對於Cu板為0.01~0.30 N/20 mm,較佳為0.02~0.20 N/20 mm,高溫下之黏著力(於本發明中,於200℃下加熱1小時後,設為175℃環境下時之黏著力)為0.50 N/20 mm以上,較佳為0.60 N/20 mm以上。The adhesive layer has the properties of being slightly adhesive at normal temperature and having an improved adhesive force at a high temperature, and the adhesive force at normal temperature is 0.01 to 0.30 N/20 mm, preferably 0.02 to 0.20 for the Cu plate. N/20 mm, adhesion at high temperature (in the present invention, the adhesion at 175 ° C after heating at 200 ° C for 1 hour) is 0.50 N / 20 mm or more, preferably 0.60 N / 20 mm or more.
作為本發明中之黏著劑,可使用特別是聚矽氧橡膠成分比率為80重量%以上之聚矽氧黏著劑,又,亦可使用二甲基矽氧烷主鏈之甲基之一部分經苯基取代之聚矽氧黏著劑。As the adhesive agent in the present invention, a polyfluorene oxide adhesive having a polyoxon rubber component ratio of 80% by weight or more, or a part of a methyl group of a dimethyl siloxane main chain may be used. A poly-oxygen adhesive substituted with a base.
其中,作為聚矽氧橡膠成分比率為80重量%以上之聚矽氧系黏著劑,較佳為包含作為樹脂成分之聚矽氧系黏著劑與二液加成反應型聚矽氧橡膠之黏著劑。尤佳為利用該聚矽氧交聯劑使作為樹脂成分之聚矽氧黏著劑與含有乙烯基之聚矽氧橡膠成分交聯而成的黏著劑。In particular, the polyoxynoxy adhesive having a polyoxyxene rubber component ratio of 80% by weight or more is preferably an adhesive comprising a polyoxynoxy adhesive as a resin component and a two-liquid addition reaction type polyoxymethylene rubber. . In particular, an adhesive obtained by crosslinking a polyoxyxylene adhesive as a resin component and a polyoxyethylene rubber component containing a vinyl group by using the polyfluorene crosslinking agent is preferred.
二液加成反應型聚矽氧橡膠可使用包含含乙烯基之聚矽氧橡膠成分與具有SiH基(氫矽烷基)之聚矽氧交聯劑者。As the two-liquid addition reaction type polyoxyxene rubber, those comprising a vinyl group-containing polyoxyethylene rubber component and a SiH group (hydroalkylene group) polyfluorene crosslinking agent can be used.
此處,作為樹脂成分之聚矽氧系黏著劑係藉由於有機氯矽烷之水解反應後進行脫水縮合反應而獲得之網狀結構的有機聚矽氧烷。又,聚矽氧橡膠成分包含具有直鏈結構之二有機聚矽氧烷。作為有機基,樹脂成分及橡膠成分中均包含甲基或苯基,亦可經乙基、丙基、丁基等取代。Here, the polyoxygen-based adhesive which is a resin component is a network-structured organopolyoxane obtained by a dehydration condensation reaction after hydrolysis reaction of organochloromethane. Further, the polyoxyethylene rubber component contains a diorganopolyoxyalkylene having a linear structure. As the organic group, a methyl group or a phenyl group is contained in both the resin component and the rubber component, and may be substituted with an ethyl group, a propyl group, a butyl group or the like.
於為二液加成反應型聚矽氧黏著劑之情形時,將乙烯基 與氫矽烷基之加成反應用於黏著劑之交聯。通常,乙烯基係部分取代聚矽氧橡膠成分之有機基而導入。又,氫矽烷基不導入包含聚矽氧樹脂成分與聚矽氧橡膠成分之黏著主劑側,而用作具有氫矽烷基之聚矽氧交聯劑。又,視需要於加成反應型聚矽氧黏著劑中調配用於促進反應之鉑觸媒等觸媒。In the case of a two-liquid addition reaction type polyoxynoxy adhesive, the vinyl The addition reaction with hydroquinone is used for crosslinking of the adhesive. Usually, the vinyl moiety is introduced by substituting the organic group of the polyoxyethylene rubber component. Further, the hydroquinone group is not introduced into the adhesive main component side containing the polyoxyxylene resin component and the polyoxyxylene rubber component, and is used as a polyfluorene oxygen crosslinking agent having a hydroquinone alkyl group. Further, a catalyst such as a platinum catalyst for promoting the reaction is blended in the addition reaction type polyoxyxene adhesive as needed.
再者,交聯劑及/或觸媒亦可為塗佈時調配至黏著主劑中之類型,於使用觸媒之情形時,交聯劑亦可為已經調配至黏著主劑中之類型。Further, the crosslinking agent and/or the catalyst may be of a type that is formulated into the adhesive main agent during coating. When the catalyst is used, the crosslinking agent may be of a type that has been formulated into the adhesive main agent.
二甲基矽氧烷主鏈之甲基之一部分經苯基取代之聚矽氧黏著劑於與上述聚矽氧橡膠成分相同之結構中,相當於二甲基矽氧烷主鏈一部分之甲基經苯基取代而成之黏著劑。並且,於聚矽氧黏著劑之二甲基矽氧烷之重複單元中,經苯基取代之重複單元為全部重複單元之0.5~30莫耳%,較佳為1.0~25莫耳%。a polyphenylene oxide adhesive in which a part of a methyl group of a dimethyl siloxane main chain is substituted with a phenyl group in the same structure as the above polyoxyxasiloxane rubber component, and corresponds to a methyl group of a part of a dimethyl siloxane main chain An adhesive formed by substituting a phenyl group. Further, in the repeating unit of dimethyloxane of the polyoxyxylene adhesive, the repeating unit substituted with a phenyl group is 0.5 to 30 mol%, preferably 1.0 to 25 mol%, of all the repeating units.
本發明中之黏著劑層亦可進而含有抗氧化劑。作為該抗氧化劑,例如可列舉受阻酚系抗氧化劑、磷系抗氧化劑、內酯系抗氧化劑等,該等可單獨使用或混合使用。The adhesive layer in the present invention may further contain an antioxidant. Examples of the antioxidant include hindered phenol-based antioxidants, phosphorus-based antioxidants, and lactone-based antioxidants, and these may be used singly or in combination.
為了藉由將黏著劑塗佈於基材層上而形成黏著劑層,作為塗佈前之黏著劑所含有之有機溶劑,可使用:甲苯、二甲苯等芳香族烴系溶劑,己烷、庚烷、辛烷、異辛烷、癸烷、環己烷、甲基環己烷、異烷烴等脂肪族烴系溶劑,工業用汽油、石油本精(petroleum benzine)、石腦油溶劑等烴系溶劑,進而亦可使用酮系、酯系、醚系等之各種溶 劑。In order to form an adhesive layer by applying an adhesive to a base material layer, as an organic solvent contained in the adhesive before coating, an aromatic hydrocarbon solvent such as toluene or xylene may be used, and hexane or heptane may be used. An aliphatic hydrocarbon solvent such as an alkane, octane, isooctane, decane, cyclohexane, methylcyclohexane or isoalkane, or a hydrocarbon system such as industrial gasoline, petroleum benzine or naphtha solvent. Further, various solvents such as a ketone system, an ester system, and an ether system can be used as the solvent. Agent.
作為用於將聚矽氧黏著劑塗佈於基材層上之手段,使用公知之塗佈方法進行塗佈即可,可自逗點刮刀塗佈機(comma coater)、模唇塗佈機、輥式塗佈機、擠壓式塗佈機、刀片塗佈機、刮刀塗佈機(blade coater)、棒式塗佈機、吻合式塗佈機、凹板印刷塗佈機、網版塗佈、浸漬塗佈、澆鑄塗佈等之中採用任意方法。As a means for applying the polyoxygen adhesive to the substrate layer, it can be applied by a known coating method, and can be used as a comma coater or a lip coater. Roll coater, extrusion coater, blade coater, blade coater, bar coater, staple coater, gravure coater, screen coating Any method is employed among the dip coating, the casting coating, and the like.
於本發明之半導體封裝製程用耐熱性黏著帶中,至使用時前之期間,為了保護黏著劑層亦可使用保護膜。作為保護膜,例如可列舉:利用聚矽氧系、長鏈烷基系、氟系、脂肪醯胺系、氧化矽系之剝離劑等進行剝離處理之包含聚氯乙烯、氯乙烯共聚物、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚胺基甲酸酯、乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、聚苯乙烯、聚碳酸酯等之塑膠膜。又,對於聚乙烯、聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯等聚烯烴樹脂系之膜,即便不使用脫模處理劑亦具有脫模性,因此亦可將其單獨用作保護膜。此種保護膜之厚度較佳為10~100 μm左右。In the heat-resistant adhesive tape for a semiconductor package process of the present invention, a protective film may be used to protect the adhesive layer before use. Examples of the protective film include a polyvinyl chloride, a vinyl chloride copolymer, and a polycondensation treatment using a polyfluorene-based, long-chain alkyl-based, fluorine-based, fatty amide-based or cerium oxide-based release agent. Ethylene terephthalate, polybutylene terephthalate, polyurethane, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-( A plastic film of a methyl acrylate copolymer, polystyrene, polycarbonate, or the like. Further, a film of a polyolefin resin such as polyethylene, polypropylene, polybutene, polybutadiene or polymethylpentene has mold release property without using a release agent, and therefore it can be separately used. Used as a protective film. The thickness of the protective film is preferably about 10 to 100 μm.
以下,對具體揭示本發明之構成與效果之實施例等進行說明。Hereinafter, embodiments and the like which specifically disclose the configuration and effects of the present invention will be described.
於聚矽氧系黏著劑(橡膠成分比率70重量%)中,添加於 二甲基矽氧烷主鏈中含有乙烯基與氫矽烷基之二液加成硬化型聚矽氧橡膠(橡膠成分比率100重量%),而製備橡膠成分比率約85重量%之黏著劑。將其塗佈於厚度25 μm之聚醯亞胺膜基材層上,並進行乾燥,而製作具有厚度約6 μm之黏著劑層之耐熱性黏著帶。In a polyoxygenated adhesive (a rubber component ratio of 70% by weight), added to The dimethyloxane main chain contains a two-liquid addition hardening type polyoxyethylene rubber of a vinyl group and a hydroquinone group (the rubber component ratio is 100% by weight), and an adhesive having a rubber component ratio of about 85% by weight is prepared. This was applied onto a polyimide film substrate layer having a thickness of 25 μm and dried to prepare a heat-resistant adhesive tape having an adhesive layer having a thickness of about 6 μm.
使用手壓輥,於常溫下,於表面施加有鍍鎳-鈀與鍍薄金之一邊16 Pin類型之QFN以4個×4個排列而成之銅製引線框架之外部焊墊側貼合該耐熱性黏著帶。Using a hand-pressing roller, at room temperature, a nickel-palladium-plated and a thin-plated gold is applied to one side of the 16-pin type QFN. The external pad side of the copper lead frame formed by four × 4 arrays is attached to the heat-resistant side. Sexual adhesive tape.
其次,為了再現半導體晶片搭載步驟之加熱處理,而於200℃下對引線框架進行1小時左右之熟化。Next, in order to reproduce the heat treatment in the semiconductor wafer mounting step, the lead frame was aged at about 200 ° C for about 1 hour.
進而,利用環氧系密封樹脂(日東電工製:HC-300B6),使用成形機(TOWA製造之Model-Y-seriese),於175℃下,以預熱設定3秒、注入時間12秒、熟化時間90秒之條件進行成形後,剝離耐熱性黏著帶,而製作QFN封裝。Further, an epoxy-based sealing resin (manufactured by Nitto Denko Corporation: HC-300B6) was used, and a molding machine (Model-Y-seriese manufactured by TOWA) was used, and preheating was set at 175 ° C for 3 seconds, and the injection time was 12 seconds. After forming under the conditions of 90 seconds, the heat-resistant adhesive tape was peeled off to form a QFN package.
於實施例1之聚矽氧系黏著劑中,添加二液加成硬化型聚矽氧橡膠,而製備橡膠成分比率約90重量%之黏著劑。其後,以與實施例1相同之方法製作QFN封裝。In the polyoxynoxy adhesive of Example 1, a two-liquid addition-hardening type polyoxyxene rubber was added to prepare an adhesive having a rubber component ratio of about 90% by weight. Thereafter, a QFN package was produced in the same manner as in Example 1.
不於黏著劑中添加二液加成硬化型之聚矽氧橡膠,除此以外,以與實施例1相同之方法製作QFN封裝。A QFN package was produced in the same manner as in Example 1 except that the two-liquid addition-hardening type polyoxymethylene rubber was not added to the adhesive.
於黏著劑中,使用另外之聚矽氧系黏著劑(橡膠成分比率40重量%),除此以外,以與比較例1相同之方法製作 QFN封裝。In the same manner as in Comparative Example 1, except that another polyoxynitride-based adhesive (a rubber component ratio of 40% by weight) was used as the adhesive. QFN package.
於黏著劑中,使用另外之低黏著等級之聚矽氧系黏著劑(橡膠成分比率70重量%),除此以外,以與比較例1相同之方法製作QFN封裝。A QFN package was produced in the same manner as in Comparative Example 1, except that a polyoxygen-based adhesive having a low adhesion level (a rubber component ratio of 70% by weight) was used for the adhesive.
使用二甲基矽氧烷主鏈之甲基之一部分經苯基取代之聚矽氧黏著劑(橡膠成分比率80重量%,其中苯基取代1.2%),且不添加二液型硬化型聚矽氧橡膠而製備黏著劑。其後,以與實施例1相同之方法製作QFN封裝。A polyoxynoxy adhesive in which a part of a methyl group of a dimethyl siloxane main chain is substituted with a phenyl group (a rubber component ratio of 80% by weight, wherein a phenyl group is substituted by 1.2%), and a two-liquid type hardening type polypene is not added. Adhesive is prepared by oxy rubber. Thereafter, a QFN package was produced in the same manner as in Example 1.
使用二甲基矽氧烷主鏈之甲基未經苯基取代之另外之聚矽氧系黏著劑(橡膠成分比率80重量%),除此以外,以與實施例3相同之方法製作QFN封裝。A QFN package was produced in the same manner as in Example 3 except that another methyl oxy-oxygen adhesive (the rubber component ratio of 80% by weight) in which the methyl group of the dimethyl siloxane main chain was not substituted with a phenyl group was used. .
使用二甲基矽氧烷主鏈之甲基未經苯基取代之另外之聚矽氧系黏著劑(橡膠成分比率30重量%),除此以外,以與實施例3相同之方法製作QFN封裝。A QFN package was produced in the same manner as in Example 3 except that another polyoxymethylene-based adhesive in which the methyl group of the dimethyl siloxane main chain was not substituted with a phenyl group (rubber component ratio: 30% by weight) was used. .
將各膠帶貼合於引線框架上後,確認手動剝離膠帶時之L/F之引線焊墊部分有無變形,並進行回工性之評價(L/F變形之代表例參照圖1)。又,對於各膠帶,測定對與上述L/F相同素材之Cu板之黏著力。測定係於設想貼附步驟之常溫、及設想成形步驟之於200℃下加熱1小時後於175℃ 環境下(以下,稱為高溫黏著力)的2種情況下進行。測定條件如下所示。After bonding the respective tapes to the lead frame, it was confirmed whether or not the L/F lead pad portion was deformed when the tape was manually peeled off, and the evaluation of the workability was performed (for a representative example of the L/F deformation, see FIG. 1). Further, for each tape, the adhesion to the Cu plate of the same material as the above L/F was measured. The measurement is carried out at room temperature after envisagement of the attaching step, and the heating step at 200 ° C for 1 hour after the assumption of the forming step is performed at 175 ° C. It is carried out in two cases in the environment (hereinafter referred to as high-temperature adhesion). The measurement conditions are as follows.
貼附條件:利用2 kg輥來回壓接1次後,於室溫下放置30 minAttachment conditions: after pressing back and forth 1 time with a 2 kg roller, leave it at room temperature for 30 min.
測定環境:貼附後,於室溫下進行測定Measurement environment: After attachment, measure at room temperature
剝離角度:180°Peeling angle: 180°
剝離速度:300 mm/minPeeling speed: 300 mm/min
貼附條件:利用2 kg輥來回壓接1次後,於室溫下放置30 minAttachment conditions: after pressing back and forth 1 time with a 2 kg roller, leave it at room temperature for 30 min.
測定環境:貼附後,於200℃下加熱1小時,並於175℃環境下進行測定Measurement environment: After attachment, heat at 200 ° C for 1 hour and measure at 175 ° C
剝離角度:180°Peeling angle: 180°
剝離速度:300 mm/minPeeling speed: 300 mm/min
又,對於藉由上述方式製作之QFN封裝,觀察有無發生樹脂洩漏,而進行樹脂洩漏性之評價(代表例參照圖2)。Further, in the QFN package produced as described above, it was observed whether or not resin leakage occurred, and the resin leakage property was evaluated (for a representative example, see FIG. 2).
圖1係用來確認將引線框架作為對象之本發明之半導體封裝製程用耐熱性黏著帶之效果的圖。雖然於未發生L/F變形之例中,於引線焊墊部分未發現變形,但於發生L/F變形之例中,於以虛線包圍之部分發現引線焊墊之方向改變等變形。Fig. 1 is a view for confirming the effect of the heat-resistant adhesive tape for semiconductor package process of the present invention which is a target of a lead frame. Although no deformation was observed in the lead pad portion in the case where L/F deformation did not occur, in the case where L/F deformation occurred, deformation such as a change in direction of the lead pad was found in a portion surrounded by a broken line.
又,圖2係用於確認有無利用密封樹脂進行成形後之樹脂洩漏的圖。得知如下情況:於未發生樹脂洩漏之例中,由於樹脂未洩漏,故而樹脂未流出至密封部位之外,然而於發生樹脂洩漏之例中,由於樹脂洩漏,樹脂流出至密封部位之外。Moreover, FIG. 2 is a figure for confirming the presence or absence of the resin leakage after shaping|molding by a sealing resin. In the case where no resin leakage occurred, since the resin did not leak, the resin did not flow out of the sealing portion. However, in the case where resin leakage occurred, the resin leaked out of the sealing portion due to resin leakage.
於實施例1中,藉由添加二液型硬化型聚矽氧橡膠,黏著劑之橡膠成分比率較高為85重量%,於常溫下具有微黏著性,因此一次剝離膠帶時之L/F未變形,回工性良好,且於高溫下具有高黏著性,因此可防止成形後之樹脂洩漏。In the first embodiment, by adding the two-component type hardening type polyoxyxene rubber, the rubber component ratio of the adhesive is as high as 85% by weight, and has a slight adhesiveness at normal temperature, so that the L/F when the tape is peeled off once is not The deformation, good workability, and high adhesion at high temperatures prevent leakage of the resin after forming.
於實施例2中,與實施例1相同地,藉由添加二液型硬化 型聚矽氧橡膠,黏著劑之橡膠成分比率較高為90重量%,於常溫下具有微黏著性,且於高溫下具有高黏著性,因此可同時實現回工性與防止樹脂洩漏。In Example 2, as in Example 1, by adding a two-liquid type hardening The type of polyoxyxene rubber has a rubber component ratio of 90% by weight, has a microadhesive property at normal temperature, and has high adhesion at a high temperature, so that workability and resin leakage can be simultaneously achieved.
於比較例1及2中,雖然可防止樹脂洩漏,但聚矽氧橡膠比率為70重量%,又,常溫下之黏著力較高,因此於膠帶剝離時引線框架變形,回工性不良。In Comparative Examples 1 and 2, although the leakage of the resin was prevented, the ratio of the polyoxyxene rubber was 70% by weight, and the adhesion at normal temperature was high. Therefore, the lead frame was deformed when the tape was peeled off, and the workability was poor.
比較例3之常溫接著力較低為0.20 N/20 mm,因此即便橡膠成分比率為70%,回工性亦優異,但高溫接著力較低為0.13 N/20 mm,因此發生樹脂洩漏。In Comparative Example 3, the normal temperature adhesion was as low as 0.20 N/20 mm. Therefore, even if the rubber component ratio was 70%, the workability was excellent, but the high temperature adhesion was as low as 0.13 N/20 mm, so that resin leakage occurred.
於實施例3中,黏著劑之二甲基矽氧烷主鏈之甲基經苯基取代,於常溫下具有與實施例1及2相同之0.05 N/20 mm之黏著力,具有微黏著性,藉此一次剝離膠帶時之L/F未變形,回工性良好,且於高溫下黏著力為1.98 N/20 mm,具有高黏著性,因此可防止成形後之樹脂洩漏。於含有苯基之情形時,可確認提高高溫之黏著性。In Example 3, the methyl group of the dimethyl methoxy siloxane main chain of the adhesive was substituted with a phenyl group, and had the same adhesion of 0.05 N/20 mm as those of Examples 1 and 2 at room temperature, and had microadhesiveness. Therefore, when the tape is peeled off once, the L/F is not deformed, the workability is good, and the adhesive force at a high temperature is 1.98 N/20 mm, which has high adhesiveness, thereby preventing leakage of the resin after molding. In the case of containing a phenyl group, it was confirmed that the adhesion at a high temperature was improved.
於比較例4中,黏著劑之二甲基矽氧烷主鏈之甲基未經苯基取代,於常溫下黏著力為0.08 N/20 mm,具有微黏著性,因此一次剝離膠帶時之L/F未變形,回工性良好,但於高溫下黏著力亦較低為0.22 N/20 mm,因此無法防止樹脂洩漏。In Comparative Example 4, the methyl group of the dimethyl oxirane main chain of the adhesive was not substituted with a phenyl group, and the adhesion at room temperature was 0.08 N/20 mm, which was slightly adhesive, so that the tape was peeled off once. /F is not deformed and has good workability, but the adhesion at low temperatures is also 0.22 N/20 mm, so resin leakage cannot be prevented.
於比較例5中,黏著劑之二甲基矽氧烷主鏈之甲基未經苯基取代,於高溫下黏著力為0.85 N/20 mm,具有高黏著性,因此可防止樹脂洩漏,但常溫下之黏著力較高為3.57 N/20 mm,因此於膠帶剝離時引線框架變形,回工性較 差。In Comparative Example 5, the methyl group of the dimethyl methoxy siloxane main chain of the adhesive was not substituted with a phenyl group, and the adhesion at a high temperature was 0.85 N/20 mm, which was highly adhesive, thereby preventing resin leakage, but The adhesion at normal temperature is 3.57 N/20 mm, so the lead frame is deformed when the tape is peeled off, and the workability is better. difference.
根據以上之結果,本發明可提供一種半導體封裝製程用耐熱性黏著帶,其係用於半導體封裝製程者,並且於常溫下之貼附時之回工性優異,且於高溫環境下之樹脂密封步驟中可防止樹脂洩漏。According to the above results, the present invention can provide a heat-resistant adhesive tape for a semiconductor package process, which is used for a semiconductor package process, and is excellent in workability at the time of attachment at a normal temperature, and is sealed in a high-temperature environment. The resin is prevented from leaking in the step.
圖1係關於L/F變形之實施例及比較例之結果。Fig. 1 shows the results of examples and comparative examples of L/F deformation.
圖2係關於樹脂洩漏產生之實施例及比較例之結果。Fig. 2 shows the results of examples and comparative examples of resin leakage.
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