TWI502283B - Exposure device, exposure method and device production method - Google Patents

Description

Exposure apparatus, exposure method, and component manufacturing method

The present invention relates to an exposure apparatus, an exposure method, and a component manufacturing method.

For example, in a manufacturing step of an electronic component such as a flat panel display, an exposure device that exposes a substrate with an exposure beam is used. As disclosed in the following patent documents, the exposure apparatus includes an alignment system that can derive the position of the substrate, and performs alignment processing using the alignment system to expose the substrate.

[Advanced technical literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-347184

In the exposure apparatus, if the time required for the alignment process becomes long, there is a possibility that the throughput is lowered and the productivity of the element is lowered.

An object of the present invention is to provide an exposure apparatus and an exposure method capable of suppressing a decrease in the amount of processing. Moreover, an object of the present invention is to provide a device manufacturing method capable of suppressing a decrease in productivity.

According to a first aspect of the present invention, an exposure apparatus is provided which moves a substrate in a scanning direction with respect to an irradiation region where an exposure beam can be irradiated, and performs exposure of a plurality of exposure target regions of the substrate by an exposure beam. In the exposure apparatus, the exposure apparatus includes a substrate platform that is in an accelerated state between the first position and the second position in the scanning direction, a stable state in the vicinity of the second position, and the second position and the third position. The substrate is held at a constant speed between the positions, and moves to the side with respect to the scanning direction; and the alignment system is the other side with respect to the scanning direction with respect to the scanning direction And an alignment mark on the substrate adjacent to the first exposure target region that is first exposed among the plurality of exposure target regions at least at a position separated by the distance between the first position and the second position a configurable detection area, and the alignment system derives the position of the first exposure target area.

According to a second aspect of the present invention, a method of manufacturing a device, comprising: exposing the substrate coated with a sensitizer using an exposure apparatus according to the first aspect; and exposing the substrate by exposure of the substrate The sensitizer is developed to form an exposure pattern layer; and the substrate is processed through the exposure pattern layer.

According to a third aspect of the present invention, an exposure method is provided, in which a substrate is moved in a scanning direction with respect to an irradiation region where an exposure beam can be irradiated, and an exposure beam is used to control a plurality of exposure target regions of the substrate. The exposure method includes: performing a first exposure process of irradiating the exposure region with the exposure light beam on the one hand, and sequentially exposing the plurality of exposure target regions on the one hand; performing alignment The alignment process is a process of arranging an alignment mark on the substrate on which the first exposure process is performed on a detection area of the alignment system, and deriving a position of the exposure target area; and performing a second exposure process. In the second exposure processing, the exposure light beam is irradiated onto the irradiation region, and the plurality of exposure target regions on the substrate on which the first exposure processing and the alignment processing are performed are sequentially exposed. And the first exposure that is first exposed in the first exposure process among the plurality of exposure target regions Respect to the moving direction of the scanning direction, the scanning direction with respect to the moving direction when the first exposure to the target region in the second exposure process is first to be exposed when exposed to the same target region exposed.

According to a fourth aspect of the present invention, a method of manufacturing a device, comprising: exposing the substrate coated with a sensitizer using an exposure method according to the third aspect; and exposing the exposure by exposure of the substrate The photosensitive agent is developed to form an exposure pattern layer; and the substrate is processed through the exposure pattern layer.

[Effects of the Invention]

According to the aspect of the invention, it is possible to suppress a decrease in the amount of processing, and it is possible to suppress a decrease in the productivity of the element.

The above and other objects, features and advantages of the present invention will become more <RTIgt;

Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, the XYZ orthogonal coordinate system is set, and the positional relationship of each portion will be described with reference to the XYZ orthogonal coordinate system. The predetermined direction in the horizontal plane is set to the X-axis direction, and the direction orthogonal to the X-axis direction in the horizontal plane is set to the Y-axis direction, and the direction orthogonal to the X-axis direction and the Y-axis direction (that is, the vertical direction) ) Set to the Z axis direction. Further, the directions of rotation (inclination) around the X-axis, the Y-axis, and the Z-axis are set to the θX, θY, and θZ directions, respectively.

<First embodiment>

The first embodiment will be described. FIG. 1 is a schematic configuration diagram showing an example of an exposure apparatus EX according to the first embodiment, and FIG. 2 is a perspective view. In FIGS. 1 and 2, the exposure apparatus EX includes a mask stage 1 that can be moved while holding a mask M, a substrate stage 2 that can move while holding the substrate P, and a drive system 3 that moves the mask stage 1. a driving system 4 for moving the substrate platform 2; an illumination system IS for illuminating the mask M with the exposure beam EL; and an image of the pattern of the mask M illuminated by the exposure beam EL to the projection system PS of the substrate P; And a control device 5 that controls the overall operation of the exposure device EX.

The mask M includes a reticle formed with an element pattern projected onto the substrate P. The substrate P includes, for example, a substrate such as a glass plate, and a photosensitive film (coated sensitizer) formed on the substrate. In the present embodiment, the substrate P includes a large glass plate called mother glass, and the size of one side of the substrate P is, for example, 500 mm or more. In the present embodiment, a rectangular glass plate having a side of about 3000 mm is used as the substrate of the substrate P.

Further, the exposure apparatus EX of the present embodiment includes an interferometer system 6 that measures the positions of the mask stage 1 and the substrate stage 2, and detects the position of the surface (lower surface, pattern forming surface) of the mask M. 1 detection system 7; second detection system 8 for detecting the position of the surface (exposure surface, photosensitive surface) of the substrate P; and an alignment system 9 for detecting alignment marks on the substrate P.

Further, the exposure device EX includes a body 13. The main body 13 has, for example, a base plate 10 disposed on a support surface (for example, a floor) FL in a clean room via a vibration isolating table BL, and a first column disposed on the bottom plate 10 (column) 11; and the second cylinder 12 disposed on the first cylinder 11. In the present embodiment, the main body 13 supports each of the projection system PS, the mask platform 1, and the substrate platform 2. In the present embodiment, the projection system PS is supported by the first cylinder 11 via the platen 14. The mask platform 1 is movably supported with respect to the second cylinder 12. The substrate platform 2 is movably supported relative to the bottom plate 10.

In the present embodiment, the projection system PS has a plurality of projection optical systems. The illumination system IS has a plurality of illumination modules corresponding to a plurality of projection optical systems. Further, in the exposure apparatus EX of the present embodiment, the mask M and the substrate P are simultaneously moved in a predetermined scanning direction, and the image of the pattern of the mask M is projected onto the substrate P. That is, the exposure apparatus EX of the present embodiment is a so-called multi-lens type scanning exposure apparatus.

In the present embodiment, the projection system PS has seven projection optical systems PL1 to PL7, and the illumination system LS has seven illumination modules IL1 to IL7. Furthermore, the number of projection optical systems and illumination modules is not limited to seven. For example, the projection system PS may have 11 projection optical systems, and the illumination system IS may also have 11 illumination modules.

The illumination system IS can illuminate the exposure beam EL for a prescribed illumination area. The illumination area is an irradiation area that can be irradiated by the exposure light beam EL emitted from each of the illumination modules IL1 to IL7. In the present embodiment, the illumination system IS illuminates each of the seven different illumination regions by the exposure light beam EL. The illumination system IS illuminates the portion of the mask M that is disposed in the illumination region using the exposure light beam EL of the uniform illumination distribution. In the present embodiment, as the exposure light beam EL emitted from the illumination system IS, an open line (g line, h line, i line) emitted from a mercury lamp 17 is used.

The mask platform 1 is movable relative to the illumination area while the mask M is held. The mask stage 1 holds the mask M such that the lower surface (pattern forming surface) of the mask M is substantially parallel to the XY plane. The drive system 3 includes, for example, a linear motor, and the mask platform 1 is movable on the guide surface 12G of the second cylinder 12. In the present embodiment, the mask platform 1 can be moved in the three directions of the X-axis, the Y-axis, and the θZ direction on the guide surface 12G while the mask M is held by the operation of the drive system 3. Come to move.

The projection system PS can illuminate the exposure beam EL for a prescribed projection area. The projection area is an irradiation area that can be irradiated by the exposure light beam EL emitted from each of the projection optical systems PL1 to PL7. In the present embodiment, the projection system PS projects the image of the pattern to each of the seven different projection areas PR1 to PR7. The projection optical system PS projects an image of the pattern of the mask M at a predetermined projection magnification onto a portion of the substrate P that is disposed in the projection regions PR1 to PR7.

The substrate stage 2 is movable relative to the projection areas PR1 to PR7 while the substrate P is held. The substrate stage 2 holds the substrate P such that the surface (exposure surface) of the substrate P is substantially parallel to the XY plane. The drive system 4 includes, for example, a linear motor, and the substrate platform 2 is movable on the guide surface 10G of the bottom plate 10. In the present embodiment, the substrate platform 2 can be moved along the X-axis, the Y-axis, the Z-axis, the θX, the θY, and the θZ directions on the guiding surface 10G while the substrate P is held by the operation of the driving system 4. These 6 directions to move.

At the time of exposure of the substrate P, the control device 5 controls the mask stage 1 and the substrate stage 2 to move the mask M and the substrate P in a predetermined scanning direction in the XY plane intersecting the optical path of the exposure light beam EL. In the present embodiment, the scanning direction (synchronous moving direction) of the substrate P is set to the X-axis direction, and the scanning direction (synchronous moving direction) of the mask M is also set to the X-axis direction. On the one hand, the control device 5 moves the substrate P in the X-axis direction with respect to the projection regions PR1 to PR7 of the projection system PS, and synchronizes the mask M with respect to the illumination system IS in synchronization with the movement of the substrate P in the X-axis direction. The illumination area is moved in the X-axis direction, and on the other hand, the substrate P is irradiated with the exposure light beam EL via the projection system PS. Thereby, the image of the pattern of the mask M is projected onto the substrate P, and the substrate P is exposed to the exposure light beam EL.

3 is a view showing an example of the substrate stage 2 disposed on the projection system PS, the first detection system 7, the second detection system 8, the alignment system 9, and the projection areas PR1 to PR7 of the present embodiment.

As shown in FIGS. 2 and 3, a reference member 43 is disposed on the upper surface of the substrate stage 2. The upper surface 44 of the reference member 43 is disposed in substantially the same plane as the surface of the substrate P held by the substrate stage 2. Further, a transmissive portion 45 through which the exposure light beam EL can be transmitted is disposed on the upper surface 44 of the reference member 43. A light receiving device 46 that can receive light transmitted through the transmitting portion 45 is disposed below the reference member 43. The light receiving device 46 has a lens system 47 that is incident on the light passing through the transmitting portion 45, and a light sensor 48 that receives light passing through the lens system 47. In the present embodiment, the photo sensor 48 includes a photographic element (charge coupled device (CCD)). The photo sensor 48 outputs a signal corresponding to the received light to the control device 5.

In the present embodiment, the transmitting portion 45 functions as a reference mark. Further, a mark placed at a predetermined position with respect to the transmissive portion 45 may be provided on the upper surface 44 of the reference member 43, and the mark may be used as a reference mark.

Next, the interferometer system 6, the first detection system 7, the second detection system 8, and the alignment system 9 will be described. In FIGS. 1 and 2, the interferometer system 6 has a laser interferometer unit 6A that measures the position of the mask platform 1, and a laser interference that measures the position of the substrate platform 2. Meter unit 6B. The laser interferometer unit 6A can measure the position of the mask platform 1 using a mirror disposed on the mask platform 1. The laser interferometer unit 6B can measure the position of the substrate stage 2 using a measuring mirror disposed on the substrate stage 2. In the present embodiment, the interferometer system 6 can measure the position information of the mask stage 1 and the substrate stage 2 with respect to the X-axis, the Y-axis, and the θX direction using the laser interferometer units 6A and 6B.

The first detecting system 7 detects the position of the lower surface (pattern forming surface) of the mask M in the Z-axis direction. The first detection system 7 is a so-called oblique incidence type multi-point focus leveling detection system. The second detecting system 8 detects the position of the surface (exposure surface) of the substrate P in the Z-axis direction. The second detection system 8 is a so-called oblique incident multi-point focus leveling detection system.

The alignment system 9 detects the alignment marks provided on the substrate P. In the present embodiment, the alignment system 9 has a first alignment system 91 disposed on the -X side with respect to the projection system PS in the X-axis direction (scanning direction) and a second alignment system disposed on the +X side. 92.

The first alignment system 91 and the second alignment system 92 are so-called off-axis alignment systems. As shown in FIG. 3, the first alignment system 91 includes a plurality of detectors 91A to 91F disposed opposite to the surface of the substrate P held by the substrate stage 2, and a plurality of detection areas SA1 to SA6, and the detections. The devices 91A to 91F correspond to each other and are arranged along the Y-axis direction. The second alignment system 92 has a plurality of detectors 92A and 92B disposed opposite to the surface of the substrate P held by the substrate stage 2, and a plurality of detection areas SB1 and SB2 corresponding to the detectors 92A and 92B. And arranged along the Y-axis direction.

Each of the detectors 91A to 91F, 92A, and 92B has a projection unit that emits detection light to the detection areas SA1 to SA6, SB1, and SB2, and a light receiving unit that can acquire pairs disposed in the detection areas SA1 to SA6, SB1, and SB2. A quasi-marked optical image. Each of the plurality of detectors 91A to 91F, 92A, and 92B can detect an alignment mark on the substrate P disposed in the detection areas SA1 to SA6, SB1, and SB2.

4 is a schematic diagram showing an example of the positional relationship between the projection regions PR1 to PR7 and the detection regions SA1 to SA6, SB1, SB2, and the substrate P, and shows the positional relationship in the plane including the surface of the substrate P. As shown in FIG. 4, in the present embodiment, the surface of the substrate P has a plurality of exposure regions (exposure target regions) PA1 to PA4 projected by the image of the mask M. In the present embodiment, the surface of the substrate P has four exposure regions PA1 to PA4. The exposure areas PA1 and PA2 are arranged at substantially equal intervals along the Y-axis direction, and the exposure areas PA3 and PA4 are arranged at substantially equal intervals in the Y-axis direction. The exposure area PA1 is disposed on the -Y side with respect to the exposure area PA2. The exposure area PA3 is disposed on the +Y side with respect to the exposure area PA4. The exposure areas PA1 and PA2 are arranged on the +X side with respect to the exposure areas PA3 and PA4.

In the present embodiment, each of the projection regions PR1 to PR7 has a trapezoidal shape in the XY plane. In the present embodiment, the projection regions PR1, PR3, PR5, and PR7 of the projection optical systems PL1, PL3, PL5, and PL7 are arranged at substantially equal intervals in the Y-axis direction, and the projection regions PR2 of the projection optical systems PL2, PL4, and PL6 are disposed. Further, PR4 and PR6 are arranged at substantially equal intervals along the Y-axis direction. The projection areas PR1, PR3, PR5, and PR7 are arranged on the -X side with respect to the projection areas PR2, PR4, and PR6. Further, regarding the Y-axis direction, the projection regions PR2, PR4, and PR6 are disposed between the projection regions PR1, PR3, PR5, and PR7.

In the present embodiment, among the plurality of projection regions PR1 to PR7, the interval between the two projection regions PR1 and the projection region PR7 which are outside the Y-axis direction is smaller than the plurality of exposure regions PA1 to PA4 with respect to the Y-axis direction. The distance between the edge on the -Y side of the outer two exposure regions PA1 (PA4) and the edge on the +Y side of the exposure region PA2 (PA3). Further, the interval between the two projection regions PR1 and the projection region PR7 which are outside the Y-axis direction is substantially the same as or slightly larger than the interval between the edge on the -Y side of the exposure region PA1 and the edge on the +Y side. Further, in the present embodiment, the sizes and shapes of the exposure regions PA1 to PA4 are substantially the same.

In the present embodiment, the plurality of detection areas SA1 to SA6 of the detectors 91A to 91F of the first alignment system 91 are arranged at predetermined intervals in the Y-axis direction. The plurality of detection areas SB1 and SB2 of the detectors 92A and 92B of the second alignment system 92 are arranged at a predetermined interval in the Y-axis direction. In the present embodiment, the first alignment system 91 has six detection areas SA1 to SA6, and the second alignment system 92 has two detection areas SB1 and SB2. In the present embodiment, the number of detection areas SB1 and SB2 of the second alignment system 92 is smaller than the number of detection areas SA1 to SA6 of the first alignment system 91.

In the present embodiment, the detection areas SA1 to SA6 are arranged on the -X side with respect to the projection areas PR1 to PR7 with respect to the X-axis direction (scanning direction). The detection areas SB1 and SB2 are arranged on the +X side with respect to the projection areas PR1 to PR7 with respect to the X-axis direction (scanning direction).

Among the plurality of detection areas SA1 to SA6, the interval between the two detection areas SA1 and the detection area SA6 on the outer side in the Y-axis direction, and the two exposures on the outer side in the Y-axis direction among the plurality of exposure areas PA1 to PA4 The interval between the edge on the -Y side of the region PA1 (PA4) and the edge on the +Y side of the exposure region PA2 (PA3) is substantially equal. Among the plurality of detection regions SB1 and SB2, the interval between the two detection regions SB1 and the detection region SB2 on the outer side in the Y-axis direction, and the two exposures on the outer side in the Y-axis direction among the plurality of exposure regions PA1 to PA4 The interval between the edge on the -Y side of the region PA1 (PA4) and the edge on the +Y side of the exposure region PA2 (PA3) is substantially equal.

In other words, in the present embodiment, the distance between the detection area SA1 and the detection area SA6 at both ends of the first alignment system 91 in the Y-axis direction, and the detection area SB1 and the detection area SB2 at both ends of the second alignment system 92. The distance is roughly the same.

Further, in the present embodiment, the positions of the detection areas SA1 and SA6 at both ends of the first alignment system 91 in the Y-axis direction are substantially the same as the positions of the detection areas SB1 and SB2 at both ends of the second alignment system 92. .

The first alignment system 91 and the second alignment system 92 can detect a plurality of alignment marks m1 to m6 provided on the substrate P. In the present embodiment, six alignment marks m1 to m6 are arranged on the substrate P so as to be spaced apart in the Y-axis direction, and groups of the alignment marks m1 to m6 are arranged along the X-axis direction. Separated four places. The alignment marks m1, m2, and m3 are provided adjacent to each end portion of the exposure regions PA1 and PA4, and the alignment marks m4, m5, and m6 are provided adjacent to each end portion of the exposure regions PA2 and PA3.

In the following description, among the four groups of the alignment marks m1 to m6 arranged at four places spaced along the X-axis direction, the alignment marks m1 to m6 of the edge closest to the -X side of the substrate P are the closest. The group is appropriately referred to as the first group G1, and the group of the alignment marks m1 to m6 close to the edge of the -X side of the substrate P next to the first group G1 is appropriately referred to as the second group G2, The group of the alignment marks m1 to m6 close to the edge of the -X side of the substrate P next to the second group G2 is appropriately referred to as the third group G3, and the pair closest to the edge of the +X side of the substrate P. The group of the quasi-markers m1 to m6 is appropriately referred to as the fourth group G4.

In the present embodiment, the detection areas SA1 to SA6 of the first alignment system 91 are disposed on the substrate P in correspondence with the six alignment marks m1 to m6 arranged in the Y-axis direction (detector 91A). ~91F). The detectors 91A to 91F are provided such that the alignment marks m1 to m6 are simultaneously disposed in the detection areas SA1 to SA6. The first alignment system 91 can detect the six alignment marks m1 to m6 simultaneously using the detectors 91A to 91F.

Further, on the substrate P, detection regions SB1 and SB2 (detectors 92A and 92B) of the second alignment system 92 are disposed corresponding to the two alignment marks m1 and m6 arranged to be spaced apart in the Y-axis direction. The detectors 92A and 92B are provided such that the alignment marks m1 and m6 are simultaneously disposed in the detection areas SB1 and SB2. The second alignment system 92 can detect the two (both ends) alignment marks m1 and m6 which are outside in the Y-axis direction among the plurality of alignment marks m1 to m6 by using the detectors 92A and 92B.

Next, an example of the operation of the exposure apparatus EX at the time of exposure of the substrate P of the present embodiment will be described.

In the present embodiment, at least a part of the operation of the exposure apparatus EX is performed based on predetermined exposure-related control information (exposure control information). The exposure control information includes a control command group that defines the operation of the exposure device EX, and is referred to as an exposure processing program (recipe). In the following description, the exposure-related control information is appropriately referred to as an exposure processing program.

The exposure processing program is previously memorized in the control device 5. The operating conditions of the exposure apparatus EX at least during the exposure of the substrate P (when the exposure light beam EL is irradiated to the mask M and the substrate P) are determined in advance by the exposure processing program. The control device 5 controls the operation of the exposure device EX in accordance with the exposure processing program.

The exposure processing program includes the movement conditions of the mask stage 1 and the substrate stage 2 at the time of exposure of the substrate P. At the time of exposure of the substrate P, the control device 5 moves the mask stage 1 and the substrate stage 2 in accordance with the exposure processing program. The exposure apparatus EX of the present embodiment is a multi-lens type scanning exposure apparatus. When the exposure areas PA1 to PA4 of the substrate P are exposed, the mask M and the substrate P are moved in the X-axis direction in the XY plane. The control device 5 synchronously moves the mask M and the substrate P in the X-axis direction according to the exposure processing program, and irradiates the mask M with the exposure light beam EL, and exposes the exposed area PA1 of the surface of the substrate P via the mask M. The ~PA4 irradiates the exposure light beam EL to expose the exposure areas PA1 to PA4, respectively. At the time of exposure of the substrate P, the control device 5 moves the substrate P in the X-axis direction (scanning direction) with respect to the projection regions PR1 to PR7 in accordance with the exposure processing program, and on the other hand, the plurality of exposure regions PA1 to P of the substrate P. PA4 is sequentially exposed.

In the present embodiment, the exposure processing of the plurality of exposure regions PA1 to PA4 provided on the substrate P is such that the exposure regions PA1 to PA4 are along the surface of the substrate P (XY plane) with respect to the projection regions PR1 to PR7. ) and move along the X-axis direction, on the one hand.

For example, when exposing the exposure area PA1 of the substrate P, the control device 5 moves the exposure region PR1 of the substrate P in the X-axis direction with respect to the projection regions PR1 to PR7 on the one hand, and faces the X-axis direction with the substrate P on the one hand. Simultaneously moving, the mask M is moved in the X-axis direction with respect to the illumination area, and on the one hand, the illumination area is irradiated with the exposure light beam EL, and the exposure light beam EL from the mask M is irradiated to the projection areas PR1 to PR7 via the projection system PS. . Thereby, the exposure area PA1 of the substrate P is exposed to the exposure light beam EL irradiated to the projection areas PR1 to PR7, and the image of the pattern of the mask M is projected onto the exposure area PA1 of the substrate P.

Next, an example of a method of exposing the substrate P using the exposure apparatus EX having the above configuration will be described with reference to the flowchart of FIG. 5 and FIGS. 6(A) to 6(F) and 7(A). The schematic diagrams of (F) of FIG. 7 and (A) of FIG. 8 to (C) of FIG. 8 are described on the one hand.

As shown in FIG. 5, in the present embodiment, a step of performing a first exposure process (step SP1) for irradiating the projection regions PR1 to PR7 with the exposure light beam EL is performed. On the one hand, sequentially exposing a plurality of exposure regions PA1 to PA4 on the substrate P for forming a first pattern layer (first layer) on the substrate P; and performing an alignment process (Step SP2), the alignment processing is performed by detecting the alignment marks m1 to m6 on the substrate P on which the first exposure processing has been performed using the alignment system 9, and deriving the respective formations formed by the first exposure processing. a process of position of the exposure areas PA1 to PA4 of the pattern layer; and a step of performing a second exposure process (step SP3) for irradiating the projection areas PR1 to PR7 with the exposure light beam EL on the one hand The plurality of exposure regions PA1 to PA4 on the substrate P of the first exposure process and the alignment process are sequentially exposed for forming a second pattern layer on the substrate P (on the first pattern layer) (second layer) (second layer)) processing.

In the present embodiment, the first and second pattern layers are formed on the substrate P for the sake of simplicity. However, the third, fourth, and . Any one of a plurality of pattern layers such as the nth pattern layer. For example, in the case of producing a film transistor, five layers (pattern layers) such as a metal layer or a transparent electrode layer are formed on the substrate P.

In the following description, the exposure area PA1 is appropriately referred to as a first exposure area PA1, the exposure area PA2 is appropriately referred to as a second exposure area PA2, and the exposure area PA3 is appropriately referred to as a third exposure area PA3. The exposure area PA4 is appropriately referred to as a fourth exposure area PA4.

First, the first exposure processing will be described with reference to FIGS. 6(A) to 6(F).

The control device 5 carries (loads) the substrate P onto the substrate platform 2. A photosensitive agent is applied onto the substrate P. The mask M having the pattern corresponding to the first pattern layer formed on the substrate P is carried (loaded) onto the mask stage 1 and held.

After being held by the substrate stage 2, as shown in FIG. 6(A), the substrate P is placed at a predetermined position with respect to the projection areas PR1 to PR7 and the detection areas SA1 to SA6, SB1, and SB2. In the following description, the position of the substrate P shown in FIG. 6(A) is appropriately referred to as an initial position.

After the mask M is held on the mask platform 1, a base line measurement process is performed in accordance with the exposure processing program. The baseline measurement process is a positional relationship between the position of the pattern image of the mask M formed by the projection system PS (the position of the projection regions PR1 to PR7) and the detection regions SA1 to SA6, SB1, and SB2 of the alignment system 9 (baseline amount) ) The processing of the measurement is performed.

The baseline measurement process includes measuring the position of the substrate platform 2 by the interferometer system 6, and receiving the alignment mark (not shown) disposed on the mask M by the light receiving device 46 via the projection system PS and the transmission portion 45. The processing of the image; and the measurement of the position of the substrate stage 2 by the interferometer system 6, and the processing of the transmission portion 45 (reference mark) by the alignment system 9. Thereby, the position of the projection areas PR1 to PR7 on the coordinate system (coordinate system in the XY plane) defined by the interferometer system 6 and the positions of the detection areas SA1 to SA6, SB1, and SB2 can be detected, and the control device can be controlled. 5 can export the baseline amount.

In the first embodiment, in the first exposure processing, among the plurality of exposure regions PA1 to PA4, exposure is first started from the first exposure region PA1, and then the second exposure region PA2 is exposed, and then the third exposure region PA3 is exposed. Finally, the fourth exposure area PA4 is exposed.

The first exposure process is an exposure process for forming the first pattern layer, and alignment marks (m1 to m6) are not provided on the substrate P. When the first exposure process is performed, the process of detecting the position of the substrate P using the alignment system 9 is not performed.

The control device 5 starts exposure of the plurality of exposure areas PA1 to PA4. First, the control device 5 controls the substrate stage 2 holding the substrate P to start the exposure of the first exposure region PA1, and moves the substrate P from the initial position to the exposure start position of the first exposure region PA1 so that the first exposure region PA1 is placed at the exposure start position. Further, the first exposure region PA1 is disposed outside the projection regions PR1 to PR7 at least before the substrate P moves to the exposure start position of the first exposure region PA1.

(B) of FIG. 6 shows a state in which the first exposure region PA1 is disposed at the exposure start position. The exposure start position of the first exposure region PA1 includes a position at which the one end on the -X side of the first exposure region PA1 is disposed in at least a part of the projection regions PR2, PR4, and PR6. In the present embodiment, as shown in FIG. 6(B), the exposure start position of the first exposure region PA1 is one end of the first exposure region PA1 on the -X side, and is disposed on the +X side of the projection regions PR2, PR4, and PR6. The position of one end.

On the one hand, the control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and moves the first exposure area PA1 of the substrate P in the -X direction with respect to the projection areas PR1 to PR7. Thereby, the first exposure area PA1 is exposed.

The control device 5 moves the substrate P in the -X direction until at least the first exposure region PA1 is disposed at the exposure end position. The exposure end position of the first exposure region PA1 includes a position at which the one end on the +X side of the first exposure region PA1 is disposed in at least a part of the projection regions PR1, PR3, PR5, and PR7. In the present embodiment, the exposure end position of the first exposure region PA1 is one end of the first exposure region PA1 on the +X side, and is disposed at one end of the projection regions PR1, PR3, PR5, and PR7 on the -X side.

By the above operation, the exposure of the first exposure region PA1 is completed. In the irradiation of the first exposure region PA1 by the exposure light beam EL, the substrate stage 2 holding the substrate P moves at a substantially constant speed (fixed speed) in the -X direction.

Then, the control device 5 controls the substrate stage 2 holding the substrate P to start the exposure of the second exposure region PA2, and moves the substrate P from the exposure end position of the first exposure region PA1 to the exposure start position of the second exposure region PA2. The second exposure area PA2 is placed at the exposure start position. Further, the second exposure region PA2 is disposed outside the projection regions PR1 to PR7 at least before the substrate P moves to the exposure start position of the second exposure region PA2.

(C) of FIG. 6 shows a state in which the second exposure region PA2 is disposed at the exposure start position. The exposure start position of the second exposure region PA2 includes a position at which the one end on the +X side of the second exposure region PA2 is disposed in at least a part of the projection regions PR1, PR3, PR5, and PR7. In the present embodiment, as shown in FIG. 6(C), the exposure start position of the second exposure region PA2 is one end of the second exposure region PA2 on the +X side of the projection regions PR1, PR3, PR5, and PR7. The position of one end of the X side.

The control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and moves the second exposure area PA2 of the substrate P in the +X direction with respect to the projection areas PR1 to PR7. Thereby, the second exposure area PA2 is exposed.

The control device 5 moves the substrate P in the +X direction until at least the second exposure region PA2 is disposed at the exposure end position. The exposure end position of the second exposure region PA2 includes a position at which the one end on the -X side of the second exposure region PA2 is disposed in at least a part of the projection regions PR2, PR4, and PR6. In the present embodiment, the exposure end position of the second exposure region PA2 is one end of the second exposure region PA2 on the -X side, which is disposed at one end of the projection regions PR2, PR4, and PR6 on the +X side.

By the above operation, the exposure of the second exposure region PA2 is completed. In the irradiation of the second exposure region PA2 by the exposure light beam EL, the substrate stage 2 holding the substrate P moves at a substantially constant speed (fixed speed) in the +X direction.

Then, the control device 5 controls the substrate stage 2 holding the substrate P to start the exposure of the third exposure region PA3, and moves the substrate P from the exposure end position of the second exposure region PA2 to the exposure start position of the third exposure region PA3. The third exposure region PA3 is placed at the exposure start position. Further, the third exposure region PA3 is disposed outside the projection regions PR1 to PR7 at least before the substrate P moves to the exposure start position of the third exposure region PA3.

(D) of FIG. 6 shows a state in which the third exposure region PA3 is disposed at the exposure start position. The exposure start position of the third exposure region PA3 includes a position at which the one end on the -X side of the third exposure region PA3 is disposed at at least a part of the projection regions PR2, PR4, and PR6. In the present embodiment, as shown in FIG. 6(D), the exposure start position of the third exposure region PA3 is one end of the third exposure region PA3 on the -X side, and is disposed on the +X side of the projection regions PR2, PR4, and PR6. The position of one end.

On the one hand, the control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and moves the third exposure area PA3 of the substrate P in the -X direction with respect to the projection areas PR1 to PR7. Thereby, the third exposure area PA3 is exposed.

The control device 5 moves the substrate P in the -X direction until at least the third exposure region PA3 is disposed at the exposure end position. The exposure end position of the third exposure region PA3 includes a position on the +X side of the third exposure region PA3 at a position of at least a part of the projection regions PR1, PR3, PR5, and PR7. In the present embodiment, the exposure end position of the third exposure region PA3 is a position on the +X side of the third exposure region PA3 at one end on the -X side of the projection regions PR1, PR3, PR5, and PR7.

By the above operation, the exposure of the third exposure region PA3 is ended. In the irradiation of the third exposure region PA3 by the exposure light beam EL, the substrate stage 2 holding the substrate P moves at a substantially constant speed (fixed speed) in the -X direction.

Then, the control device 5 controls the substrate stage 2 holding the substrate P to start the exposure of the fourth exposure region PA4, and moves the substrate P from the exposure end position of the third exposure region PA3 to the exposure start position of the fourth exposure region PA4. The fourth exposure region PA4 is placed at the exposure start position. Further, the fourth exposure region PA4 is disposed outside the projection regions PR1 to PR7 at least before the substrate P moves to the exposure start position of the fourth exposure region PA4.

(E) of FIG. 6 shows a state in which the fourth exposure region PA4 is disposed at the exposure start position. The exposure start position of the fourth exposure region PA4 includes a position on the +X side of the fourth exposure region PA4 at a position of at least a part of the projection regions PR1, PR3, PR5, and PR7. In the present embodiment, as shown in FIG. 6(E), the exposure start position of the fourth exposure region PA4 is one end of the fourth exposure region PA4 on the +X side, and is disposed in the projection regions PR1, PR3, PR5, and PR7. The position of one end of the X side.

The control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and moves the fourth exposure area PA4 of the substrate P in the +X direction with respect to the projection areas PR1 to PR7. Thereby, the fourth exposure area PA4 is exposed.

The control device 5 moves the substrate P in the +X direction until at least the fourth exposure region PA4 is disposed at the exposure end position. The exposure end position of the fourth exposure region PA4 includes a position at which the one end on the -X side of the fourth exposure region PA4 is disposed in at least a part of the projection regions PR2, PR4, and PR6. In the present embodiment, as shown in FIG. 6(F), the exposure end position of the fourth exposure region PA4 is one end of the fourth exposure region PA4 on the -X side, and is disposed on the +X side of the projection regions PR2, PR4, and PR6. The position of one end.

By the above operation, the exposure of the fourth exposure region PA4 is ended. In the irradiation of the fourth exposure region PA4 by the exposure light beam EL, the substrate stage 2 holding the substrate P moves at a substantially constant speed (fixed speed) in the +X direction.

By the above operation, the first exposure processing ends. After the first exposure process is completed, the substrate P is carried out (unloaded) from the substrate stage 2. The substrate P unloaded from the substrate stage 2 is subjected to various process processes including development processing, etching processing, and the like. Thereby, the first pattern layer is formed on the substrate P. Further, alignment marks m1 to m6 are formed on the substrate P by performing the first exposure processing and the subsequent processing.

Subsequently, the photosensitive material is applied to the substrate P on which the first pattern layer and the alignment marks m1 to m6 are formed, so that the second exposure process is performed.

Next, the alignment process will be described with reference to FIGS. 7(A) to 7(F).

In the present embodiment, two alignment modes are prepared. The exposure processing program has a first alignment mode and a second alignment mode. When the exposure areas PA1 to PA4 of the substrate P are exposed, the control device 5 selects at least one of the first alignment mode and the second alignment mode to perform alignment processing for deriving the positions of the exposure regions PA1 to PA4.

The first alignment mode is a mode in which all of the plurality of alignment marks m1 to m6 adjacent to the exposure regions PA1 to PA4 of the substrate P are detected, and the position of the substrate P and the exposure on the substrate P are derived. The respective positions of the areas PA1 to PA4. That is, in the first alignment mode, the control device 5 detects all the alignment marks m1 to m4 of the first group G1 to the fourth group G4 using the alignment system 9.

The second alignment mode is a mode using the result of the alignment processing based on the first alignment mode. The second alignment mode is a mode in which the alignment mark specified in the plurality of alignment marks m1 to m6 on the substrate P is detected, and the first alignment is performed based on the detection result of the predetermined alignment mark. As a result of the mode derivation, the position of the substrate P and the position of each of the exposure areas PA1 to PA4 on the substrate P are derived. In the second alignment mode, the control device 5 uses the alignment system 9 to detect a part of the alignment marks of the plurality of alignment marks m1 to m6 on the substrate P.

Hereinafter, the alignment processing based on the first alignment mode will be described. The second alignment mode will be described later.

The control device 5 carries (loads) the substrate P having the first pattern layer and the alignment marks m1 to m6 to the substrate stage 2. A photosensitive agent is applied onto the substrate P. After being held by the substrate stage 2, the substrate P is placed at the initial position. The mask M having the pattern corresponding to the second pattern layer formed on the substrate P is carried (loaded) onto the mask stage 1 and held.

The control device 5 detects the alignment marks m1 to m6 corresponding to the exposure regions PA1 to PA4 using the alignment system 9, and derives the positions of the exposure regions PA1 to PA4.

First, as shown in FIG. 7(A), the control device 5 measures the position of the substrate platform 2 using the interferometer system 6, and controls the substrate platform 2 to move the substrate P so that the alignment marks of the first group G1 are aligned. M1 to m6 are disposed in the detection areas SA1 to SA6 of the first alignment system 91. The first alignment system 91 detects the alignment marks m1 to m6 of the first group G1. Thereby, the control device 5 can derive the positions of the alignment marks m1 to m6 of the first group G1 on the coordinate system defined by the interferometer system 6.

Then, as shown in FIG. 7(B), the control device 5 measures the position of the substrate stage 2 using the interferometer system 6, and controls the substrate stage 2 to move the substrate P so that the alignment mark m1 of the third group G3 M6 is disposed in the detection areas SB1 and SB2 of the second alignment system 92. The second alignment system 92 detects the alignment marks m1 and m6 of the third group G3. Thereby, the control device 5 can derive the positions of the alignment marks m1, m6 of the third group G3 on the coordinate system defined by the interferometer system 6.

Then, as shown in FIG. 7(C), the control device 5 measures the position of the substrate stage 2 using the interferometer system 6, and controls the substrate stage 2 to move the substrate P so that the alignment mark m1 of the second group G2 The ~m6 is disposed in the detection areas SA1 to SA6 of the first alignment system 91. The first alignment system 91 detects the alignment marks m1 to m6 of the second group G2. Thereby, the control device 5 can derive the positions of the alignment marks m1 to m6 of the second group G2 on the coordinate system defined by the interferometer system 6.

Then, as shown in (D) of FIG. 7, the control device 5 measures the position of the substrate stage 2 using the interferometer system 6, and controls the substrate stage 2 to move the substrate P so that the alignment mark m1 of the third group G3 The ~m6 is disposed in the detection areas SA1 to SA6 of the first alignment system 91. The first alignment system 91 detects the alignment marks m1 to m6 of the third group G3. Thereby, the control device 5 can derive the positions of the alignment marks m1 to m6 of the third group G3 on the coordinate system defined by the interferometer system 6.

Then, as shown in FIG. 7(E), the control device 5 measures the position of the substrate stage 2 using the interferometer system 6, and controls the substrate stage 2 to move the substrate P so that the alignment mark m1 of the fourth group G4 The ~m6 is disposed in the detection areas SA1 to SA6 of the first alignment system 91. The first alignment system 91 detects the alignment marks m1 to m6 of the fourth group G4. Thereby, the control device 5 can derive the positions of the alignment marks m1 to m6 of the fourth group G4 on the coordinate system defined by the interferometer system 6.

In the present embodiment, as described with reference to FIG. 7(B) and FIG. 7(D), the first alignment system 91 and the second alignment system 92 use detection regions (SA1, SA6) at both ends, (SB1, SB2), the same alignment marks m1, m6 on the substrate P are detected.

The position of the detection areas SA1 to SA6 of the first alignment system 91 on the coordinate system defined by the interferometer system 6 is known by the above-described baseline measurement processing. Therefore, the control device 5 measures the position of the substrate stage 2 by the interferometer system 6, and arranges the alignment marks m1, m6 in the detection areas SA1, SA6 of the first alignment system 91, and the detection area SA1 The alignment marks m1 and m6 having the same alignment marks m1 and m6 arranged in the SA6 are disposed in the detection areas SB1 and SB2 of the second alignment system 92, whereby the predetermined alignment by the interferometer system 6 can be obtained. The position of the detection areas SB1, SB2 of the second alignment system 92 on the coordinate system. Further, the control device 5 can detect the result of detecting the alignment marks m1 and m6 on the substrate P by the first alignment system 91 and the alignment marks m1 and m6 on the substrate P by the second alignment system 92. The positional relationship between the detection areas SA1 to SA6 of the first alignment system 91 and the detection areas SB1 and SB2 of the second alignment system 92 is derived.

Further, when the positional relationship between the detection areas SA1 to SA6 of the first alignment system 91 and the detection areas SB1 and SB2 of the second alignment system 92 is derived, the substrate platform may be used without using the alignment marks on the substrate P. Reference mark on 2 (transmission portion 45). The control device 5 measures the position of the substrate stage 2 by the interferometer system 6, and arranges the reference mark (transmission portion 45) in the detection areas SA1, SA6 of the first alignment system 91, and the detection area SA1. The reference marks having the same reference marks arranged in the SA 6 are disposed in the detection areas SB1 and SB2 of the second alignment system 92, whereby the second alignment system 92 on the coordinate system defined by the interferometer system 6 can be obtained. The positions of the areas SB1, SB2 are detected. The control device 5 can derive the first alignment based on the result of detecting the reference mark on the substrate stage 2 by the first alignment system 91 and the result of detecting the reference mark on the substrate platform 2 by the second alignment system 92. The positional relationship between the detection areas SA1 to SA6 of the system 91 and the detection areas SB1 and SB2 of the second alignment system 92.

Further, when the positional relationship between the detection areas SA1 to SA6 of the first alignment system 91 and the detection areas SB1 and SB2 of the second alignment system 92 is derived, the marks (alignment marks, The reference mark) may be different from the mark (alignment mark, reference mark) detected by the second alignment system 92.

By the above operation, the control device 5 uses the alignment system 9 to detect all of the alignment marks m1 to m6 provided corresponding to each of the plurality of exposure regions PA1 to PA4.

In the present embodiment, the alignment marks corresponding to the first exposure region PA1 are the alignment marks m1 to m3 of the third group G3 and the alignment marks m1 to m3 of the fourth group G4. The alignment marks corresponding to the second exposure region PA2 are the alignment marks m4 to m6 of the third group G3 and the alignment marks m4 to m6 of the fourth group G4. The alignment marks corresponding to the third exposure region PA3 are the alignment marks m4 to m6 of the first group G1 and the alignment marks m4 to m6 of the second group G2. The alignment marks corresponding to the fourth exposure region PA4 are the alignment marks m1 to m3 of the first group G1 and the alignment marks m1 to m3 of the second group G2.

The control device 5 can detect the positions of the alignment marks m1 to m6 of the first group G1 to the fourth group G4 detected by the first alignment system 91 and the position detected by the second alignment system 92. The positions of the alignment marks m1 and m6 of the third group G3 derive the position of the substrate P on the coordinate system defined by the interferometer system 6 and the positions of the plurality of exposure regions PA1 to PA4.

Next, the second exposure processing will be described with reference to FIGS. 7(A) to 7(F).

After the positions of the exposure regions PA1 to PA4 are derived by the execution of the alignment process, the control device 5 starts the second exposure process for forming the second pattern layer on the substrate P.

In the second embodiment, in the second exposure processing, among the plurality of exposure regions PA1 to PA4, exposure is first started from the first exposure region PA1, and then the second exposure region PA2 is exposed, and then the third exposure region PA3 is exposed. Finally, the fourth exposure area PA4 is exposed.

In order to start exposure of the first exposure region PA1, the control device 5 controls the substrate stage 2 holding the substrate P to move to the exposure start position of the first exposure region PA1 so that the first exposure region PA1 is placed at the exposure start position. Further, the first exposure region PA1 is disposed outside the projection regions PR1 to PR7 at least before the substrate P moves to the exposure start position of the first exposure region PA1.

(F) of FIG. 7 shows a state in which the first exposure region PA1 is disposed at the exposure start position. On the one hand, the control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and moves the first exposure area PA1 of the substrate P in the -X direction with respect to the projection areas PR1 to PR7. Thereby, the first exposure area PA1 is exposed. The control device 5 moves the substrate P in the -X direction until at least the first exposure region PA1 is disposed at the exposure end position. By the above operation, the exposure of the first exposure region PA1 is completed.

As described above, in the present embodiment, the moving direction and the pair of the substrate P in the X-axis direction when the first exposure region PA1 that is first exposed in the first exposure process is exposed in the plurality of exposure regions PA1 to PA4 The moving direction of the substrate P in the X-axis direction when the first exposure region PA1 that is first exposed in the second exposure process is exposed is the same direction (−X direction).

In the second exposure processing, in the second exposure processing, the order of exposure of the plurality of exposure areas PA1 to PA4 and the movement direction, exposure start position, and exposure end position of the substrate P when the exposure areas PA1 to PA4 are exposed are exposed. It is substantially the same as the first exposure process. In other words, in the second exposure processing, the control device 5 causes the substrate P to have the same movement trajectory (moving path) as the trajectory (moving path) of the substrate P described with reference to FIGS. 6(A) to (F). And moving, on the one hand, sequentially exposing the plurality of exposure areas PA1 to PA4.

As described above, in the first exposure processing, the movement trajectory (moving path) of the substrate P with respect to the projection regions PR1 to PR7 when the plurality of exposure regions PA1 to PA4 are sequentially exposed in the first exposure processing, and the second exposure During the processing, the movement trajectories (moving paths) of the substrate P with respect to the projection regions PR1 to PR7 when the plurality of exposure regions PA1 to PA4 are sequentially exposed are substantially the same. Description of the flow of exposing the exposure areas PA2 to PA4 in the second exposure processing will be omitted.

The first exposure process for forming the first pattern layer on the substrate P, the alignment process performed when the second pattern layer is formed on the first pattern layer, and the second pattern layer formed on the substrate P 2 Exposure processing has been described.

Next, an example of the second exposure processing will be described. In the second exposure processing, the plurality of substrates P on which the first pattern layer is formed are sequentially exposed. For example, a plurality of substrates P having a predetermined number of sheets (lots) are sequentially exposed using an exposure light beam EL from a predetermined pattern of the mask M. In addition, the plurality of substrates P of the one batch are sequentially exposed to the first exposure process to form the first pattern layer, and the substrate P subjected to various processes such as development processing.

As described above, in the present embodiment, the first alignment mode and the second alignment mode are prepared, and at least one of the first alignment mode and the second alignment mode is selected before the second exposure process is performed, according to at least one of The selected alignment mode performs the alignment process.

In the present embodiment, the number of the plurality of substrates P of one batch consisting of a predetermined number of (for example, 50) substrates P is from the first substrate P (the substrate P at the beginning of the batch) to the predetermined number of sheets. The substrate P (for example, five sheets) is subjected to alignment processing at the time of exposure, and the first alignment mode is selected. As described with reference to FIG. 7(A) to FIG. 7(F) and the like, the first alignment mode detects all of the plurality of alignment marks m1 to m6 adjacent to the exposure regions PA1 to PA4 of the substrate P. And a mode of the position of the substrate P and the position of each of the exposure areas PA1 to PA4 on the substrate P is derived.

In the present embodiment, the substrate P from the beginning of the batch to the predetermined number of sheets in one batch is subjected to alignment processing in accordance with the first alignment mode. After the plurality of substrates P are exposed, the control device 5 performs alignment processing on the remaining substrates P in the batch according to the second alignment mode, and exposes the substrate P based on the result of the alignment process.

The second alignment mode is a mode using the result of the alignment processing based on the first alignment mode. In the present embodiment, the second alignment mode is a mode in which an alignment mark specified by a plurality of alignment marks m1 to m6 on the substrate P is detected, and detection based on the predetermined alignment mark is performed. As a result, the position of the substrate P and the positions of the exposure regions PA1 to PA4 on the substrate P are derived from the results of the first alignment mode.

In the following, an example of the alignment processing by the second alignment mode and the exposure processing (second exposure processing) of the substrate P performed based on the result of the alignment processing will be described with reference to FIGS. 8(A) to 8((). C) Explain.

The control device 5 carries (loads) the substrate stage 2 to the substrate P having the first pattern layer and the alignment marks m1 to m6. A photosensitive agent is applied onto the substrate P. After being held by the substrate stage 2, the substrate P is placed at the initial position. The mask M having the pattern corresponding to the second pattern layer formed on the substrate P is carried (loaded) onto the mask stage 1 and held.

The control device 5 detects the predetermined alignment marks m1 to m6 on the substrate P using the alignment system 9, and derives the positions of the exposure regions PA1 to PA4.

First, as shown in FIG. 8(A), the control device 5 measures the position of the substrate stage 2 using the interferometer system 6, and controls the substrate stage 2 to move the substrate P so that the alignment marks of the first group G1 are aligned. M1 to m6 are disposed in the detection areas SA1 to SA6 of the first alignment system 91. The first alignment system 91 detects the alignment marks m1 to m6 of the first group G1. Thereby, the control device 5 can derive the positions of the alignment marks m1 to m6 of the first group G1 on the coordinate system defined by the interferometer system 6.

Then, as shown in FIG. 8(B), the control device 5 measures the position of the substrate stage 2 using the interferometer system 6, and controls the substrate stage 2 to move the substrate P so that the alignment marks of the third group G3 M1 and m6 are disposed in the detection areas SB1 and SB2 of the second alignment system 92. The second alignment system 92 detects the alignment marks m1 and m6 of the third group G3. Thereby, the control device 5 can derive the positions of the alignment marks m1, m6 of the third group G3 on the coordinate system defined by the interferometer system 6.

The control device 5 detects the alignment marks m1 to m6 of the first group G1 by using the first alignment system 91 and the alignment mark m1 for the third group G3 by using the second alignment system 92. M6 performs the detection and derives the position of the substrate P on the coordinate system defined by the interferometer system 6.

As described above, the position of the substrate P on the coordinate system defined by the interferometer system 6 (hereinafter referred to as position data (data 1) as appropriate) is obtained by the alignment processing based on the first alignment mode. The position of each of the exposure areas PA1 to PA4 on the substrate P (hereinafter referred to as position data 2 as appropriate). The position data 1 is information relating to the position of the entire substrate P, and includes, for example, a predetermined reference position on the substrate P such as the position of the outer shape (edge) of the substrate P. The position data 2 is a position of each of the exposure areas PA1 to PA4 with respect to a predetermined reference position on the substrate P.

Further, the position data 1 may be obtained based on any one of the substrates P in the predetermined number of substrates P in the first alignment mode, or may be based on the predetermined number of substrates P. The average value of the data obtained for each of the number of substrates P. Similarly, the position data 2 may be obtained based on any one of the substrates P from the batch head to the predetermined number of substrates P in the first alignment mode, or may be based on the specification. The average value of the data obtained for each of the number of substrates P.

Then, the position of the substrate P on the coordinate system defined by the interferometer system 6 (hereinafter referred to as position data 3 as appropriate) is obtained by the alignment processing based on the second alignment mode. Therefore, the control device 5 can obtain the position data 1 based on the derivation result of the alignment processing based on the first alignment mode, that is, the position data 1 and the position data 2, and the position data 3 which is the derivation result of the alignment processing based on the second alignment mode. The respective positions of the exposure areas PA1 to PA4 on the substrate P on the coordinate system defined by the interferometer system 6 (hereinafter referred to as position data 4 as appropriate). In the present embodiment, it is considered that the positions of the exposure regions PA1 to PA4 with respect to the predetermined reference position on the substrate P (the positional relationship between the predetermined reference position on the substrate P and the exposure regions PA1 to PA4) are based on the first The execution timing of the alignment processing of the alignment mode and the execution timing of the alignment processing based on the second alignment mode do not substantially change. Therefore, the control device 5 can detect the results of the alignment marks m1 to m6 and the derivation result of the first alignment mode based on the second alignment mode using the first alignment system 91 and the second alignment system 92 (position data). 1, 2), the position (position data 3) of the substrate P and the positions (position data 4) of the exposure areas PA1 to PA4 on the substrate P are derived.

Further, as described above, in the alignment processing by the first alignment mode, the control device 5 detects the detection areas SA1 and SA6 at both ends of the first alignment system 91 and the detection areas SB1 at both ends of the second alignment system 92. The same alignment marks m1 and m6 on the substrate P are disposed on each of the SBs 2, and the same alignment marks m1 and m6 are detected to obtain the detection areas SA1 to SA6 of the first alignment system 91. The positional relationship between the detection areas SB1 and SB2 of the second alignment system 92. Therefore, in the alignment processing by the second alignment mode, the control device 5 can detect the alignment marks m1 to m6 of the first group G1 and use the second pair based on the first alignment system 91. The quasi-system 92 detects the alignment marks m1 and m6 of the third group G3, and obtains the positional data 3 and the positional data 4 with high precision.

After the respective positions (position data 4) of the respective exposure areas PA1 to PA4 are obtained, the control device 5 starts exposure of the exposure areas PA1 to PA4.

In the present embodiment, after the alignment processing based on the second alignment mode is executed, the control device 5 first exposes the first exposure region PA1 among the plurality of exposure regions PA1 to PA4, and then the second exposure region PA2. Exposure is performed, and then the third exposure region PA3 is exposed, and finally the fourth exposure region PA4 is exposed.

In order to start exposure of the first exposure region PA1, the control device 5 controls the substrate stage 2 holding the substrate P to move to the exposure start position of the first exposure region PA1 so that the first exposure region PA1 is placed at the exposure start position. Further, the first exposure region PA1 is disposed outside the projection regions PR1 to PR7 at least before the substrate P moves to the exposure start position of the first exposure region PA1.

(C) of FIG. 8 shows a state in which the first exposure region PA1 is disposed at the exposure start position. On the one hand, the control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and moves the first exposure area PA1 of the substrate P in the -X direction with respect to the projection areas PR1 to PR7. Thereby, the first exposure area PA1 is exposed. The control device 5 moves the substrate P in the -X direction until at least the first exposure region PA1 is disposed at the exposure end position. By the above operation, the exposure of the first exposure region PA1 is completed.

In the present embodiment, in the plurality of exposure areas PA1 to PA4, when the first exposure area PA1 that is first exposed is exposed in the exposure processing executed after the alignment processing by the first alignment mode, the first exposure area PA1 is exposed. The substrate P is exposed in the X-axis direction and the substrate P is exposed in the first exposure region PA1 that is first exposed in the exposure process performed after the alignment process based on the second alignment mode. The direction of movement is the same direction (-X direction).

In the exposure processing executed after the alignment processing by the second alignment mode, the order of exposure of the plurality of exposure areas PA1 to PA4 and the substrate during exposure of each of the exposure areas PA1 to PA4 are performed in the exposure processing performed in the second embodiment. The moving direction, the exposure start position, and the exposure end position of P are substantially the same as the exposure processing performed after the alignment processing based on the first alignment mode. That is, in the exposure processing performed after the alignment processing based on the second alignment mode, on the one hand, the substrate P is made to have the track of the substrate P described with reference to FIGS. 6(A) to 6(F). The trajectory (moving path) is moved by the same moving trajectory (moving path), and the plurality of exposure areas PA1 to PA4 are sequentially exposed on the one hand.

In other words, in the present embodiment, the substrate P is sequentially exposed to the plurality of exposure regions PA1 to PA4 in the exposure processing performed after the alignment processing in the first alignment mode with respect to the projection regions PR1 to PR7. The movement path (moving path) and the substrate P when sequentially exposing the plurality of exposure areas PA1 to PA4 in the exposure processing performed after the alignment processing by the second alignment mode are performed with respect to the projection areas PR1 to PR7 The movement trajectory (moving path) is approximately the same.

In the present embodiment, the second alignment system 92 is disposed on the +X side with respect to the projection regions PR1 to PR7, and the control device 5 uses the second alignment system 92 in the alignment processing based on the second alignment mode. After the alignment marks m1, m6 are detected, the first exposure area PA1 can be immediately moved to the exposure start position.

When the alignment marks m1 and m6 on the substrate P held by the substrate stage 2 are disposed at the position of the substrate stage 2 in the detection areas SB1 and SB2 of the second alignment system 92 (hereinafter referred to as an alignment position as appropriate) When one end on the -X side of the first exposure area PA1 is placed on the exposure start position of the substrate stage 2 on the +X side of the projection areas PR2, PR4, and PR6, the substrate stage 2 is in the X-axis direction. The quasi-position and the exposure start position are moved in the -X direction in an accelerated state. Further, in the vicinity of the exposure start position, the movement state of the substrate stage 2 is at least one of a steady state and a constant speed state. Further, when the one end on the -X side of the first exposure region PA1 is disposed at the exposure start position of the substrate stage 2 on the +X side of the projection regions PR2, PR4, and PR6, the movement is shifted to the +X side of the first exposure region PA1. When one end is disposed at the exposure end position of the substrate stage 2 at one end on the -X side of the projection regions PR1, PR3, PR5, and PR7, the substrate stage 2 moves in the -X direction at a constant speed state.

In the present embodiment, the first exposure region is disposed at a position on the +X side with respect to the projection regions PR1 to PR7 and at least the minimum assist distance of the substrate platform 2 is spaced apart from the projection area PR1 to PR7. The detection marks SB1 and SB2 of the second alignment system 92 for detecting the alignment marks m1 and m2 of the third group G3 adjacent to the PA1. Thereby, the control device 5 can immediately change the exposure processing to the first exposure region PA1 after detecting the alignment marks m1 and m6 of the third group G3 using the second alignment system 92.

The minimum required assist distance of the substrate stage 2 means that the substrate stage 2 in the stationary state starts moving from the first position to the side of the predetermined direction (for example, the -X side) at the first position until the predetermined state is reached. The distance from the second position of the target speed. The assist distance includes an accelerated acceleration distance of the substrate platform 2 and a stable stable distance of the substrate platform 2. The substrate stage 2 moves in an accelerated state between the first position and the second position, and the substrate stage 2 moves in a stable state in the vicinity of the second position.

The necessary minimum travel distance of the substrate platform 2 is, for example, a distance corresponding to the moving performance of the substrate platform 2, which is based on the performance of the drive system 4 and the weight of the substrate platform 2. The substrate stage 2 that has reached the target speed until reaching the second position can be at the target speed between the second position and the third position on the side (-X direction) that is the predetermined direction with respect to the second position. Move at a constant speed.

In the aligned position, the substantially stationary substrate stage 2 moves from the aligned position until the exposure start position is reached. In order to achieve the target scanning speed, the alignment position and the exposure start position must be longer than the substrate platform 2 The necessary minimum distance to travel is longer.

FIG. 9 is a schematic diagram showing the relationship between the projection optical system PL2, the second alignment system 92, and the substrate P (substrate platform 2). The detection areas SB1 and SB2 of the second alignment system 92 are disposed at a position on the +X side with respect to the projection area PR2 on the +X side and at least the minimum required assist distance IJ. The second alignment system 92 can detect the alignment marks m1 and m6 of the third group G3 on the substrate P adjacent to the first exposure region PA1 that is first exposed among the plurality of exposure regions PA1 to PA4. Thereby, the distance LA between the alignment position and the exposure start position can be made longer than the necessary minimum assist distance IJ of the substrate platform 2.

Therefore, the alignment marks m1, m6 of the third group G3 on the substrate P held by the substrate stage 2 disposed in the substantially stationary state at the aligned position are disposed in the detection area SB1 of the second alignment system 92. SB2, after being detected by the second alignment system 92, the substrate stage 2 starts moving in the -X direction, whereby the target scanning speed can be reached until the exposure start position is reached. The substrate stage 2 that has reached the exposure start position moves to the exposure end position in the constant speed state at the target scanning speed in the -X direction, whereby the first exposure area PA1 is along the -X with respect to the projection areas PR1 to PR7. The direction moves and is exposed on the one hand.

Further, the alignment position is a position at which the first exposure region PA1 is disposed outside the projection regions PR1 to PR7. Further, in the present embodiment, the distance LA between the alignment position and the exposure start position substantially coincides with the minimum required assist distance IJ. That is, in the present embodiment, the first position of one end of the minimum assist distance IJ is required to coincide with the alignment position, and the second position and the exposure start position of the other end of the minimum assist distance IJ are necessary. Consistent.

Furthermore, the distance LA between the alignment position and the exposure start position may be longer than the minimum necessary assist distance IJ. At this time, the substrate stage 2 can reach the target scanning speed before reaching the exposure start position.

As described above, according to the present embodiment, at the position on the +X side with respect to the projection regions PR1 to PR7 and spaced apart by the minimum necessary assist distance, the first and the plurality of exposure regions PA1 to PA4 are received first. The detection areas SB1 and SB6 in which the alignment marks m1 and m6 of the third group G3 on the substrate P adjacent to the exposed first exposure area PA1 are disposed, and the second alignment in which the position of the first exposure area PA1 is derived are provided. The system 92, therefore, the control device 5 can move the substrate platform 2 in the -X direction after the substrate platform 2 is placed at the aligned position and the alignment marks m1, m6 are detected using the second alignment system 92. The exposure of the first exposure area PA1 is immediately started. Therefore, the time required for the alignment process can be shortened. Therefore, the decrease in the amount of processing can be suppressed, and the decrease in the productivity of the element can be suppressed.

Further, in the present embodiment, the detection areas SA1 to SA6 of the first alignment system 91 may be disposed at a position on the -X side with respect to the projection areas PR1 to PR7 and separated by a minimum necessary assist distance. . Thereby, after the alignment marks m1 to m6 are detected by the first alignment system 91, the substrate stage 2 can be moved in the +X direction, and immediately start on the -X side with respect to the alignment marks m1 to m6. Exposure processing of at least one of adjacent exposure areas PA1 to PA4.

Further, according to the present embodiment, among the plurality of exposure regions PA1 to PA4, the first exposure region PA1 that is first exposed in the first exposure processing is advanced. The moving direction with respect to the scanning direction (X-axis direction) at the time of row exposure is the same as the moving direction with respect to the scanning direction (X-axis direction) when exposing the first exposure region that is first exposed in the second exposure processing. In the direction (−X direction), it is possible to suppress a long moving distance of the substrate stage 2 until the substrate P is carried out from the substrate stage 2 after the substrate P is carried into the substrate stage 2 . Therefore, the decrease in the amount of processing can be suppressed.

Further, according to the present embodiment, the movement trajectory of the substrate stage 2 with respect to the projection areas PR1 to PR7 when the plurality of exposure areas PA1 to PA4 are sequentially exposed in the first exposure processing is more than that in the second exposure processing. Since the movement trajectories of the substrate stage 2 with respect to the projection areas PR1 to PR7 when the exposure areas PA1 to PA4 are sequentially exposed are substantially the same, the first exposure processing and the second exposure processing can be performed under substantially the same device conditions. The substrate P is exposed. For example, even when the main body 13 or the like is deformed in accordance with the movement (position) of the substrate stage 2, the movement trajectory of the substrate stage 2 is the same in the first exposure processing and the second exposure processing, and thus In the exposure processing and the second exposure processing, each of the exposure regions PA1 to PA4 can be exposed under substantially the same device condition (deformation condition of the main body 13 or the like).

Further, in the present embodiment, the second alignment system 92 detects the alignment marks m1 and m6 at both ends of the plurality of alignment marks m1 to m6 arranged in the Y-axis direction. Therefore, the control device 5 can be based on the second By aligning the detection results of the system 92, the position of the substrate P and the positions of the exposure areas PA1 to PA4 are accurately extracted.

Further, in the present embodiment, the first alignment system 91 and the second alignment system 92 detect the alignment marks m1 and m6 on the substrate P by using the detection regions at both ends, so that the control device 5 can As a result of the detection, the position of the substrate P and the positions of the exposure regions PA1 to PA4 are accurately extracted.

Further, in the present embodiment, the number of detection areas (detectors) of the second alignment system 92 is smaller than the number of detection areas (detectors) of the first alignment system 91. Thereby, a space between the second alignment system 92 and the substrate stage 2 (above the substrate stage 2) can be ensured. In the present embodiment, the loading operation of the substrate P with respect to the substrate stage 2 and the unloading operation of the substrate P from the substrate platform 2 can be smoothly performed from the +X side with respect to the projection system PS.

Further, in the present embodiment, when a plurality of substrates P in one batch are sequentially exposed, the substrate P is exposed to a predetermined number of sheets (for example, about five sheets). In the case where the first alignment mode is selected and the second alignment mode is selected when the remaining substrate P in the batch is exposed, for example, a plurality of pattern layers (for example, five patterns are laminated on the substrate P). In the case of the layer), at least one of the first alignment mode and the second alignment mode may be selected in accordance with the required overlay precision of the pattern layer. For example, the first alignment mode may be selected when high overlap precision is required, and the second alignment mode is selected when relatively coarse overlap precision is also allowed. By performing the alignment process in the second alignment mode, the time required for the alignment process can be shortened, and the decrease in the amount of processing can be suppressed.

<Second embodiment>

Next, the second embodiment will be described. In the following description, the same or equivalent components as those in the above-described embodiments are denoted by the same reference numerals, and the description thereof will be simplified or omitted.

FIG. 10 is a schematic diagram showing an example of the positional relationship between the projection regions PR1 to PR7 and the detection regions SA1 to SA6, SB1 and SB2, and the substrate P in the second embodiment. As shown in FIG. 10, in the present embodiment, the surface of the substrate P has six exposure regions PA1 to PA6 projected by the image of the pattern of the mask M.

Next, the first exposure processing of the present embodiment will be described with reference to FIGS. 11(A) to 11(F).

In the first embodiment, in the first exposure processing, the second exposure region PA2 of the plurality of exposure regions PA1 to PA6 is first exposed, and then the first exposure region PA1 is exposed, and then the third exposure region PA3 is exposed. Then, the fourth exposure area PA4 is exposed, and then the fifth exposure area PA5 is exposed, and finally the sixth exposure area PA6 is exposed.

(A) of FIG. 11 shows a state in which the second exposure region PA2 is disposed at the exposure start position. On the one hand, the control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and moves the second exposure area PA2 of the substrate P in the -X direction with respect to the projection areas PR1 to PR7. Thereby, the second exposure area PA2 is exposed.

Then, the control device 5 starts exposure of the first exposure region PA1. (B) of FIG. 11 shows a state in which the first exposure region PA1 is disposed at the exposure start position. On the one hand, the control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and moves the first exposure area PA1 of the substrate P in the +X direction with respect to the projection areas PR1 to PR7. Thereby, the second exposure area PA2 is exposed.

Then, the control device 5 starts exposure of the third exposure region PA3. (C) of FIG. 11 shows a state in which the third exposure region PA3 is disposed at the exposure start position. On the one hand, the control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and moves the third exposure area PA3 of the substrate P in the -X direction with respect to the projection areas PR1 to PR7. Thereby, the third exposure area PA3 is exposed.

Then, the control device 5 starts exposure of the fourth exposure region PA4. (D) of FIG. 11 shows a state in which the fourth exposure region PA4 is disposed at the exposure start position. The control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and moves the fourth exposure area PA4 of the substrate P in the +X direction with respect to the projection areas PR1 to PR7. Thereby, the fourth exposure area PA4 is exposed.

Then, the control device 5 starts exposure of the fifth exposure region PA5. (E) of FIG. 11 shows a state in which the fifth exposure region PA5 is disposed at the exposure start position. On the one hand, the control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and moves the fifth exposure area PA5 of the substrate P in the -X direction with respect to the projection areas PR1 to PR7. Thereby, the fifth exposure area PA5 is exposed.

Then, the control device 5 starts exposure of the sixth exposure region PA6. (F) of FIG. 11 shows a state in which the sixth exposure region PA6 is disposed at the exposure start position. On the one hand, the control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and moves the sixth exposure area PA6 of the substrate P in the +X direction with respect to the projection areas PR1 to PR7. Thereby, the sixth exposure area PA6 is exposed.

By the above operation, the first exposure processing ends.

Next, the alignment processing based on the first alignment mode will be described with reference to FIGS. 12(A) to 12(F).

On the substrate P, alignment marks m1 to m6 of the first group G1, alignment marks m1 to m6 of the second group G2, alignment marks m1 to m6 of the third group G3, and a fourth group are provided. The alignment marks of G4 are m1 to m6.

As shown in FIG. 12(A), the control device 5 detects the alignment marks m1 to m6 of the first group G1 by the first alignment system 91.

Then, as shown in FIG. 12(B), the control device 5 detects the alignment marks m1, m6 of the third group G3 by the second alignment system 92.

Then, as shown in FIG. 12(C), the control device 5 detects the alignment marks m1 to m6 of the second group G2 by the first alignment system 91.

Then, as shown in FIG. 12(D), the control device 5 detects the alignment marks m1 to m6 of the third group G3 by the first alignment system 91.

Then, as shown in FIG. 12(E), the control device 5 detects the alignment marks m1 to m6 of the fourth group G4 by the first alignment system 91.

In the present embodiment, as described with reference to FIG. 12(B) and FIG. 12(D), the first alignment system 91 and the second alignment system 92 use detection regions (SA1, SA6 at both ends). And (SB1, SB2), to detect the same alignment marks m1, m6 on the substrate P.

In the present embodiment, the alignment marks corresponding to the first exposure region PA1 are the alignment marks m1 and m2 of the third group G3 and the alignment marks m1 and m2 of the fourth group G4. The alignment marks corresponding to the second exposure region PA2 are the alignment marks m3 and m4 of the third group G3 and the alignment marks m3 and m4 of the fourth group G4. The alignment marks corresponding to the third exposure region PA3 are the alignment marks m5 and m6 of the third group G3 and the alignment marks m5 and m6 of the fourth group G4. The alignment marks corresponding to the fourth exposure region PA4 are the alignment marks m5 and m6 of the first group G1 and the alignment marks m5 and m6 of the second group G2. The alignment marks corresponding to the fifth exposure region PA5 are the alignment marks m3 and m4 of the first group G1 and the alignment marks m3 and m4 of the second group G2. The alignment marks corresponding to the sixth exposure region PA6 are the alignment marks m1 and m2 of the first group G1 and the alignment marks m1 and m2 of the second group G2.

The control device 5 can detect the positions of the alignment marks m1 to m6 of the first group G1 to the fourth group G4 detected by the first alignment system 91 and the second detection system 92. The positions of the alignment marks m1 and m6 of the group G3 are used to derive the position of the substrate P on the coordinate system defined by the interferometer system 6 and the positions of the plurality of exposure regions PA1 to PA4.

Then, the second exposure processing is executed. In the second exposure processing, the order of exposure of the plurality of exposure areas PA1 to PA6 and the movement direction, the exposure start position, and the exposure end position of the substrate P when the exposure areas PA1 to PA6 are exposed, and the first exposure processing Roughly the same. In other words, in the second exposure processing, the substrate P is moved in the same manner as the track trajectory (moving path) of the substrate P described with reference to FIGS. 11(A) to 11(F) (moving path). And moving, on the one hand, sequentially exposing the plurality of exposure areas PA1 to PA4.

As described above, the first exposure process of forming the first pattern layer on the substrate P, the alignment process performed when the second pattern layer is formed on the first pattern layer, and the formation of the second pattern on the substrate P are performed on the substrate P of the present embodiment. The second exposure process of the layer has been described.

Next, the alignment processing based on the second alignment mode of the present embodiment will be described with reference to FIGS. 13(A) to 13(D).

As shown in FIG. 13(A), the substrate P is placed at the initial position. Then, as shown in FIG. 13(B), the control device 5 detects the alignment marks m1 to m6 of the first group G1 by the first alignment system 91.

Then, as shown in FIG. 13(C), the control device 5 detects the alignment marks m1 and m6 of the third group G3 by the second alignment system 92.

The control device 5 detects the alignment marks m1 to m6 of the first group G1 by using the first alignment system 91, and the alignment mark m1 of the third group G3 by using the second alignment system 92. The result of the detection by m6 and the result of the derivation of the first alignment mode are used to detect the position of the substrate P and the positions of the exposure areas PA1 to PA6.

After the respective positions (position data 4) of the respective exposure areas PA1 to PA6 are obtained, the control device 5 starts exposure of the exposure areas PA1 to PA6. As shown in FIG. 13(D), the second exposure region PA2 is disposed at the exposure start position.

In the exposure processing executed after the alignment processing by the second alignment mode, the order of exposure of the plurality of exposure regions PA1 to PA6 and the substrate when the exposure regions PA1 to PA6 are exposed are exposed. The moving direction, the exposure start position, and the exposure end position of P are also substantially the same as the exposure processing performed after the alignment processing based on the first alignment mode.

As described above, in the present embodiment, the decrease in the amount of processing can be suppressed, and the substrate P can be favorably exposed.

Further, even when the substrate P having the exposure regions PA1 to PA6 and the alignment marks m1 to m6 shown in FIG. 14 is exposed, the first exposure processing, including the first and second alignments, is performed. The alignment processing of the mode and the second exposure processing can also suppress the decrease in the amount of processing, and the substrate P can be favorably exposed.

In FIG. 14, the surface of the substrate P has six exposure regions PA1 to PA6. The exposure areas PA1 and PA2 are arranged at substantially equal intervals in the Y-axis direction, and the exposure areas PA3 and PA4 are arranged at substantially equal intervals in the Y-axis direction, and the exposure areas PA5 and PA6 are substantially arranged in the Y-axis direction. They are arranged at intervals. The exposure area PA1 is disposed on the -Y side with respect to the exposure area PA2. The exposure area PA3 is disposed on the +Y side with respect to the exposure area PA4. The exposure area PA5 is disposed on the -Y side with respect to the exposure area PA5. The exposure areas PA1 and PA2 are arranged on the +X side with respect to the exposure areas PA3 and PA4. The exposure areas PA5 and PA6 are arranged on the -X side with respect to the exposure areas PA3 and PA4. Further, the surface of the substrate P has alignment marks m1 to m6 of the first group G1 to the sixth group G6.

<Third embodiment>

Next, a third embodiment will be described. In the following description, the same or equivalent components as those in the above-described embodiments are denoted by the same reference numerals, and the description thereof will be simplified or omitted.

(A) to (D) of FIG. 15 are views showing an example of the alignment system 9 of the third embodiment. In the present embodiment, the positions of the detection regions (SA1, SA6) at both ends of the first alignment system 91 in the Y-axis direction are different from the positions of the detection regions (SB1, SB2) at both ends of the second alignment system 92. .

Next, an example of the alignment processing based on the second alignment mode will be described. As shown in FIG. 15(A), the substrate P is placed at the initial position. Then, as shown in FIG. 15(B), the control device 5 detects the alignment marks m1 to m6 of the first group G1 by the first alignment system 91.

Then, as shown in FIG. 15(C), the control device 5 detects the alignment marks m1 and m6 of the third group G3 by the second alignment system 92.

The control device 5 derives the position of the substrate P and the respective positions of the exposure regions PA1 to PA6 based on the detection result of the alignment system 9, and starts exposure of the exposure regions PA1 to PA6.

In the present embodiment, the first exposure region PA1 among the plurality of exposure regions PA1 to PA6 is first exposed. As shown in FIG. 15(D), the first exposure region PA1 is disposed at the exposure start position, and exposure of the first exposure region PA1 is started.

In the present embodiment, the positions of the detection regions (SA1, SA6) at both ends of the first alignment system 91 in the Y-axis direction are different from the positions of the detection regions (SB1, SB2) at both ends of the second alignment system 92. Therefore, the position (alignment position) of the substrate platform 2 in which the alignment marks m1 and m6 on the substrate P held by the substrate stage 2 are disposed in the detection areas SB1 and SB2 of the second alignment system 92 can be shortened. One end of the exposure region PA1 on the -X side is disposed at a distance from the exposure start position of the substrate stage 2 at one end on the +X side of the projection regions PR2, PR4, and PR6. That is, the moving distance of the substrate stage 2 when the state shown in FIG. 15(C) is changed to the state shown in FIG. 15(D) can be shortened. In the present embodiment, as shown in FIG. 15(C), when the substrate stage 2 is placed at the aligned position, the positions of the projection areas PR1 to PR7 and the first exposure area PA1 which is first exposed are referred to in the Y-axis direction. To be roughly the same. Thus, the moving distance of the substrate stage 2 can be shortened, so that the decrease in the amount of processing can be suppressed.

<Fourth embodiment>

Next, a fourth embodiment will be described. In the following description, the same or equivalent components as those in the above-described embodiments are denoted by the same reference numerals, and the description thereof will be simplified or omitted.

Fig. 16 is a view showing an example of the alignment system 9 of the fourth embodiment. In the present embodiment, the distance LX1 between the detection areas SA1 to SA6 of the first alignment system 91 and the detection areas SB1 and SB2 of the second alignment system 92 in the X-axis direction, and the first group G1 on the substrate P. The distances LX2 of the alignment marks m1 to m6 and the alignment marks m1 to m6 of the third group G3 are substantially the same.

In the present embodiment, when the alignment marks m1 to m6 are detected in the second alignment mode, the detection and use of the alignment marks m1 to m6 of the first group G1 using the first alignment system 91 can be simultaneously performed. Detection of the alignment marks m1, m6 of the third group G3 of the second alignment system 92. Therefore, the decrease in the amount of processing can be suppressed.

Further, as the substrate P of the above-described first to fourth embodiments, not only a glass substrate for a display element but also a semiconductor wafer or a thin film magnetic head for manufacturing a semiconductor element can be used. A ceramic wafer used for head, or a mask or a mask of a mask used in an exposure apparatus (synthetic quartz, silicon wafer).

Further, as the exposure apparatus EX, a step-and-scan type scanning type in which the substrate M is scanned and exposed by the exposure light beam EL passing through the mask M through the mask M is moved in synchronization with the substrate P. In addition to the exposure device (scanning stepper), it is also applicable to a step of uniformly exposing the pattern of the mask M in a state where the mask M and the substrate P are stationary, and sequentially moving the substrate P in steps. A step-and-repeat projection exposure device (stepper).

Moreover, the present invention is also applicable to a twin platform type exposure apparatus having a plurality of substrate platforms as disclosed in the specification of US Pat. No. 6,431,007, the specification of US Pat. No. 6,208,407, and the specification of US Pat. No. 6,262,796.

Furthermore, the present invention is also applicable to an exposure apparatus disclosed in, for example, the specification of US Pat. No. 6,897,963, the specification of the European Patent Application Publication No. 1713113, etc., the exposure apparatus comprising: a substrate platform, a holding substrate; and a measuring platform that does not hold the substrate A reference member formed with a reference mark and/or various photodetectors are mounted. Further, an exposure apparatus having a plurality of substrate platforms and a measurement platform can be employed.

The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a liquid crystal display device or a display, and can be widely applied to an exposure apparatus for manufacturing a semiconductor device in which a semiconductor device pattern is exposed on a substrate P, and is used for manufacturing. Thin film magnetic heads, photographic elements (CCD), micromachines, microelectromechanical systems (MEMS), deoxyribonucleic acid (DNA) chips, exposure devices such as reticle or mask, etc. .

Furthermore, in each of the above embodiments, the position information of each platform is measured using an interferometer system including a laser interferometer. However, the present invention is not limited thereto. For example, a scale (scale) set on each platform may be used. ) (diffraction grating) Encoder system for detection.

Further, in the above embodiment, a light-transmitting type mask in which a predetermined light-shielding pattern (or a phase pattern or a matte pattern) is formed on a transparent substrate is used, but instead of the mask, for example, the United States may be used. A variable shaped mask (also referred to as an electronic mask, active mask) that transmits a pattern or a reflective pattern or an illuminating pattern is formed according to the electronic material of the pattern to be exposed, as disclosed in the specification of Japanese Patent No. 6778257. Or image generator). Further, a pattern forming device including a self-luminous type image display device may be provided instead of a variable-shaped mask having a non-light-emitting image display device.

The exposure apparatus EX of the above-described embodiment is manufactured by assembling various sub-systems including the respective constituent elements listed in the patent application scope, so as to secure predetermined mechanical precision, electrical precision, and optical precision. . In order to ensure these various precisions, adjustments for achieving optical precision are performed for various optical systems before and after the assembly, adjustments for achieving mechanical precision are performed for various mechanical systems, and adjustments for achieving electrical precision are performed for various electrical systems. . The assembly steps from the various subsystems to the exposure apparatus include mechanical connection of various subsystems, wiring connection of electrical circuits, piping connection of pneumatic circuits, and the like. Prior to the assembly steps from the various subsystems to the exposure apparatus, of course, the respective assembly steps of the various subsystems. After the assembly steps of the various subsystems to the exposure apparatus are completed, comprehensive adjustments are required to ensure various precisions as the entire exposure apparatus. Further, it is preferable that the production of the exposure apparatus is performed in a clean room in which temperature and cleanness are managed.

As shown in FIG. 17, the micro-elements of the semiconductor element or the like are via step 201, step 202, step 203, substrate processing step 204, and component assembly step (including a dicing step, a bonding step, and a package step). The processing is performed 205 and the inspection step 206, etc., the above step 201 performs the function and performance design of the micro-element, the above step 202 creates a mask (mask) based on the design step, and the step 203 forms the substrate of the component. That is, the substrate, the substrate processing step 204 includes substrate processing (exposure processing), the substrate processing includes: using the pattern of the mask and exposing the substrate by using an exposure beam according to the above embodiment; and the exposed substrate (sensitizer) ) Perform development. Furthermore, the step 204 includes forming an exposure pattern layer (a layer of the developed sensitizer) corresponding to the pattern of the mask by developing the sensitizer, and processing the substrate through the exposure pattern layer.

Furthermore, the requirements of the above embodiments and modifications can be combined as appropriate. Moreover, some components may not be used in some cases. Further, all the publications related to the exposure apparatus and the like disclosed in the above embodiments and modifications are cited as a part of the contents of the present disclosure within the scope permitted by the law.

While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

1. . . Mask platform

2. . . Substrate platform

3, 4. . . Drive System

5. . . Control device

6. . . Interferometer system

6A, 6B. . . Laser interferometer unit

7. . . First detection system

8. . . Second detection system

9‧‧‧Alignment system

10‧‧‧floor

10G‧‧‧ guiding surface

11‧‧‧1st cylinder

12‧‧‧2nd cylinder

12G‧‧‧ guiding surface

13‧‧‧ Subject

14‧‧‧ Platen

17‧‧‧ Mercury lamp

43‧‧‧ reference components

44‧‧‧ upper surface

45‧‧‧Transmission Department

46‧‧‧Light-receiving device

47‧‧‧Lens system

48‧‧‧Light sensor

91‧‧‧1st alignment system

91A~91F, 92A, 92B‧‧‧ detector

92‧‧‧2nd alignment system

201~206, SP1, SP2, SP3‧‧‧ steps

BL‧‧‧Anti-vibration table

EL‧‧‧Exposure beam

EX‧‧‧Exposure device

FL‧‧‧Support surface

G1‧‧‧Group 1

G2‧‧‧Group 2

G3‧‧‧Group 3

Group 4 of G4‧‧‧

G5‧‧‧Group 5

Group 6 of G6‧‧‧

IL1~IL7‧‧‧Lighting Module

IR1~IR7‧‧‧Lighting area

IS‧‧‧Lighting system

LA, LX1, LX2‧‧‧ distance

IJ‧‧‧Minimum minimum walking distance

M‧‧‧ mask

M1~m6‧‧‧ alignment mark

P‧‧‧Substrate

PA1~PA6‧‧‧Exposure area

PL1~PL7‧‧‧Projection Optical System

PR1~PR7‧‧‧Projection area

PS‧‧‧Projection System

SA1~SA6, SB1, SB2‧‧‧ detection area

FIG. 1 is a schematic configuration diagram showing an example of an exposure apparatus according to the first embodiment.

Fig. 2 is a perspective view showing an example of an exposure apparatus according to the first embodiment.

3 is a view showing an example of a projection system and a substrate stage according to the first embodiment.

4 is a schematic diagram showing an example of a positional relationship between a projection area, a detection area, and a substrate in the first embodiment.

Fig. 5 is a flowchart showing an example of an exposure method according to the first embodiment.

(A) to (F) of FIG. 6 are views showing an example of the operation of the exposure apparatus according to the first embodiment.

(A) to (F) of FIG. 7 are views showing an example of the operation of the exposure apparatus according to the first embodiment.

(A) to (C) of FIG. 8 are views showing an example of the operation of the exposure apparatus according to the first embodiment.

Fig. 9 is a schematic view for explaining a relationship between a projection area and a detection area in the first embodiment.

FIG. 10 is a schematic diagram showing an example of a positional relationship between a projection area, a detection area, and a substrate in the second embodiment.

(A) to (F) of FIG. 11 are views showing an example of the operation of the exposure apparatus according to the second embodiment.

(A) to (F) of FIG. 12 are views showing an example of the operation of the exposure apparatus according to the second embodiment.

(A) to (D) of FIG. 13 are views showing an example of the operation of the exposure apparatus according to the second embodiment.

FIG. 14 is a schematic diagram showing an example of a positional relationship between a projection area, a detection area, and a substrate in the second embodiment.

(A) to (D) of FIG. 15 are views showing an example of the operation of the exposure apparatus according to the third embodiment.

FIG. 16 is a view showing an example of the operation of the exposure apparatus of the fourth embodiment.

17 is a flow chart for explaining an example of a manufacturing procedure of a micro element.

1. . . Mask platform

2. . . Substrate platform

3, 4. . . Drive System

5. . . Control device

6. . . Interferometer system

6A, 6B. . . Laser interferometer unit

7. . . First detection system

8. . . Second detection system

9. . . Alignment system

10. . . Bottom plate

10G. . . Guide surface

11. . . First cylinder

12. . . Second cylinder

12G. . . Guide surface

13. . . main body

14. . . Platen

91. . . First alignment system

92. . . Second alignment system

BL. . . Anti-vibration table

EL. . . Exposure beam

EX. . . Exposure device

FL. . . Support surface

IS. . . Lighting system

M. . . Mask

P. . . Substrate

PL1, PL3, PL5, PL7. . . Projection optical system

PS. . . Projection system

Claims (19)

An exposure apparatus that moves a substrate in a first direction with respect to an irradiation area that is irradiated with an exposure beam by a projection optical system, and sequentially performs a plurality of the substrates including the first and second substrates on the substrate. Exposure processing for exposing the exposure target area, the exposure apparatus comprising: a substrate platform holding the substrate and moving the substrate relative to the illumination area; and an alignment system for detecting the plurality of marks, the plurality of marks And the control device is configured to control movement of the substrate platform in the exposure processing based on a detection result of the plurality of marks by the alignment system, wherein the alignment system includes: first The alignment system has a first detection area provided on one side in the first direction with respect to the irradiation area, and a second alignment system having a second detection area provided on the irradiation area On the other side in the first direction, the control device performs control such that the control is based on the first detection result. In the movement of the substrate stage of the exposure processing of the first substrate, the first detection result is obtained by the first alignment system on the plurality of marks provided on the first substrate. The first mark on the one side and the second mark on the other side of the exposure target area are provided in the area, and the second mark is provided on the second substrate by the first alignment system. a second detection result obtained by detecting the first mark, a third detection result obtained by detecting the second mark on the second substrate by the second alignment system, and the first detection result, and controlling The movement of the substrate stage of the exposure processing in the second substrate. The exposure apparatus according to claim 1, wherein the control device detects the predetermined mark of the plurality of marks by the first alignment system and the predetermined rule by the second alignment system As a result of detecting the mark, information relating to the positional relationship between the first detection area and the second detection area is obtained, and based on the information related to the positional relationship and the first detection result, the exposure to the first substrate is controlled. The movement of the processed substrate platform and the movement of the substrate platform in the exposure process on the second substrate are controlled based on the information on the positional relationship and the first, second, and third detection results. The exposure apparatus according to claim 1, wherein the substrate platform includes predetermined marks that are sequentially disposed in the first detection area and the second detection area, and the control device is based on the first alignment system The result of detecting the predetermined mark and the result of detecting the predetermined mark by the second alignment system, and obtaining information related to the positional relationship between the first detection area and the second detection area, based on the positional relationship Related information and the first detection result, controlling the substrate platform in the exposure process for the first substrate And the movement of the substrate platform in the exposure processing on the second substrate based on the information related to the positional relationship and the first, second, and third detection results. The exposure apparatus according to any one of claims 1 to 3, wherein the first detection area includes: two detection areas, which are capable of simultaneously detecting the first mark and the first direction Two marks provided at predetermined intervals in the orthogonal second direction, and the second detection area include two detection areas that can simultaneously detect that the second mark is set at a predetermined interval with respect to the second direction. Two marks. The exposure apparatus according to claim 4, wherein the two marks on the first mark and the two marks on the second mark are provided at positions equal to each other in the second direction. The exposure apparatus according to Item 4, wherein the number of the second detection areas is smaller than the number of the first detection areas. The exposure apparatus according to the fourth aspect of the invention, wherein the distance between the detection regions at both ends of the second direction in the first detection region and the both ends of the second direction in the second detection region are The distance between the detection areas is approximately the same. The exposure apparatus of claim 7, wherein The position of the detection region at both ends in the second direction in the first detection region is substantially the same as the position of the detection region at both ends in the second direction in the second detection region. The exposure apparatus according to claim 7, wherein the position of the detection region at both ends in the second direction in the first detection region and the position of the detection region at both ends in the second direction in the second detection region are For the difference. The exposure apparatus according to claim 7, wherein the first alignment system and the second alignment system detect the same mark on the substrate by using detection regions at both ends. A method of manufacturing a device, comprising: exposing the substrate coated with a sensitizer using an exposure apparatus according to any one of claims 1 to 10; and exposing the substrate by the exposure The exposed sensitizer is developed to form an exposure pattern layer, and the substrate is processed through the exposure pattern layer. An exposure method for moving a substrate in a first direction with respect to an irradiation region irradiated with an exposure beam through a projection optical system, and sequentially performing a plurality of the substrates including the first and second substrates on the substrate Exposure processing for exposing an exposure target region, wherein the exposure apparatus includes: holding the substrate by a substrate stage, and moving the substrate with respect to the irradiation region; and detecting a plurality of marks by the alignment system, the plurality of marks Is set Provided on the substrate on the substrate stage; the first alignment system having the first detection region provided on the one side in the first direction with respect to the irradiation region, and the plurality of the first substrate In the mark, the first mark on the one side and the second mark on the other side of the exposure target area are provided for the exposure target area, and the detection is performed based on the first alignment system. The first detection result obtained by detecting the first and the second marks on the first substrate controls the movement of the substrate platform in the exposure processing on the first substrate; and the detection is performed by the first alignment system The first mark on the second substrate; and the second mark on the second substrate by a second alignment system having a second detection region provided on the other side in the first direction with respect to the irradiation region And detecting, based on the first detection result, the second detection result obtained by detecting the first mark on the second substrate by the first alignment system, and utilizing The second alignment system controls the movement of the substrate stage on the exposure processing of the second substrate on the third detection result obtained by detecting the second mark on the second substrate. The exposure method according to claim 12, wherein the detection result of the predetermined mark among the plurality of marks by the first alignment system and the detection of the predetermined mark by the second alignment system are used As a result, the first detection area and the second inspection are obtained. Information relating to the positional relationship of the measurement area; controlling the movement of the substrate platform in the exposure processing on the first substrate based on the information related to the positional relationship and the first detection result; and based on the information related to the positional relationship And the first, the second, and the third detection results, and controlling the movement of the substrate platform in the exposure processing on the second substrate. The exposure method according to claim 12, wherein the detection result of the predetermined mark provided on the substrate platform by the first alignment system and the detection of the predetermined mark by the second alignment system are used As a result, information relating to the positional relationship between the first detection area and the second detection area is obtained, and the substrate subjected to the exposure processing on the first substrate is controlled based on the information on the positional relationship and the first detection result. Movement of the platform; and control of movement of the substrate platform in the exposure process on the second substrate based on information related to the positional relationship and the first, second, and third detection results. The exposure method according to any one of the items 12 to 14, wherein the exposure processing is performed by sequentially performing a substrate from a first one to a predetermined number of the plurality of substrates as the first substrate For the treatment, another substrate is treated as the second substrate. As described in any one of claims 12 to 14, In the exposure method, the first detection region includes two detection regions that simultaneously detect two markers at a predetermined interval with respect to a second direction orthogonal to the first direction in the first marker, and The second detection area includes two detection areas that simultaneously detect two marks of the second mark that are provided at predetermined intervals in relation to the second direction. The exposure method according to claim 16, wherein the two marks on the first mark and the two marks on the second mark are provided at positions equal to each other in the second direction. The exposure method according to any one of claims 12 to 14, wherein the substrate has a size of 500 mm or more on one side. A method of manufacturing a device, comprising: exposing the substrate coated with a sensitizer using an exposure method according to any one of claims 12 to 18; and exposing the substrate by using the substrate The exposed sensitizer is developed to form an exposure pattern layer, and the substrate is processed through the exposure pattern layer.