TWI490631B - Photomask - Google Patents

Description

Mask

The present invention relates to a reticle that uses a microlens to reduce and project an image of a mask pattern onto an object to be exposed that is disposed oppositely, and more particularly to a light that can improve light utilization efficiency of an object to be exposed. cover.

The conventional photomask has a plurality of openings of a specific shape formed on a surface of the transparent substrate, and a plurality of microlenses respectively disposed on the other surface of the transparent substrate corresponding to the openings. The image of the opening is imaged on the object to be exposed in the opposite direction; the conventional mask can improve the resolution of the exposure pattern in the exposure and expose the fine pattern (see, for example, Japanese Laid-Open Patent Publication No. 2009-277900).

However, such a conventional mask has a configuration in which an opening (a mask pattern) provided on one surface of the transparent substrate and a microlens (projection lens) disposed on the other surface of the transparent substrate are disposed at intervals equal to the thickness of the substrate, thereby A part of the light passing through the opening of the reticle may not enter the corresponding microlens. This is because the light source illuminating the illuminator has a viewing angle (collimation half angle), so that the light passing through the opening is diffused and incident on the microlens at an angle corresponding to the parallel half angle. Therefore, as the interval between the opening and the microlens becomes larger, the amount of light entering the microlens is reduced, and the amount of light irradiated to the object to be exposed is reduced, so that the utilization efficiency of light is lowered.

In particular, in the case of a photomask that is exposed to a large area (for example, a substrate for TFT display), the thickness of the transparent substrate is as thick as several mm to ten mm, which makes the above problem more remarkable.

Accordingly, the present invention has been made in view of the above problems, and an object thereof is to provide a photomask capable of improving light utilization efficiency of an object to be exposed.

In order to achieve the above object, a photomask according to the present invention includes: a mask substrate on which a plurality of mask patterns having a specific shape are formed on one surface of the transparent substrate; and a microlens array formed on one surface of the other transparent substrate to form the plurality of masks The image of the mask pattern is reduced by a plurality of projection lenses projected on the oppositely disposed object, and the other surface is formed with a plurality of field mirrors having an optical axis that coincides with the optical axis of the projection lens, wherein the plurality of field mirrors are used The incident light is concentrated on the projection lens; wherein the mask pattern and the microlens array are joined by having the mask pattern and the field lens have a certain gap and approaching the opposite direction.

With the above configuration, the field lens of the microlens array having a specific gap and close to the mask pattern of the opposite mask substrate is used to collect the light passing through the mask pattern on the projection lens, and the projection lens is used to make The image of the mask pattern is reduced and projected on the object to be exposed which is disposed oppositely. Thereby, it is possible to use the field lens disposed close to the opposite mask pattern to concentrate almost the entire amount of light passing through the mask pattern on the projection lens. Therefore, it is possible to reduce the light source illuminating efficiency of the object to be exposed through the projection lens and to reduce the power of the light source to reduce the burden on the light source.

Moreover, at least the outer region of the plurality of projection lenses of the microlens array is formed with a light shielding film. Thereby, the light irradiated outside the projection lens can be isolated by the light shielding film formed at the outer region of at least the plurality of projection lenses of the microlens array. Therefore, unnecessary light leakage through the reticle can be isolated, thereby further improving the resolution of the exposure pattern.

Furthermore, the surface of the microlens array on which the plurality of projection lenses are formed is provided with a registration mark aligned with the object to be exposed based on the projection lens. Thereby, alignment with the object to be exposed can be performed by using the alignment mark provided on the surface of the microlens array on which the plurality of projection lenses are formed, based on the projection lens. Therefore, the alignment mark of the reticle can be made close to the surface of the object to be exposed which is disposed close to the reticle, and the alignment mark of the alignment reference and the reticle previously formed on the object to be exposed can be simultaneously observed. Therefore, the alignment of the photomask and the object to be exposed can be easily performed. Moreover, even if the center of the mask pattern is offset from the optical axis of the projection lens, since the projection image of the mask pattern is formed on the optical axis of the projection lens, the above-described projection lens is used as a reference. By aligning the alignment marks, the image of the mask pattern can be accurately positioned at a specific position of the object to be exposed for exposure.

Further, the exposure system is conveyed in a direction at a constant speed during exposure; the alignment mark is provided on the front side of the region in which the plurality of projection lenses are formed, only at a predetermined distance toward the conveyance direction of the object to be exposed. Thereby, by using the alignment mark provided on the front side of the region in which the plurality of projection lenses are formed at a certain distance from the conveyance direction of the object to be exposed, it is possible to perform the pair with the object to be exposed which is conveyed in one direction at a constant speed during exposure. Bit. Therefore, it is possible to perform exposure while correcting the positional deviation between the photomask and the object to be exposed which is moving in one direction, thereby shortening the time of the exposure step.

Further, the alignment mark is formed by a pair of thin line patterns parallel to the conveyance direction of the object to be exposed, and is disposed between the pair of thin line patterns and intersecting the conveyance direction of the object to be exposed at a specific angle. It consists of a thin line pattern. Thereby, a pair of fine line patterns in parallel with the conveyance direction of the object to be exposed is formed, and a pair of fine line patterns are formed at a specific angle with the conveyance direction of the object to be exposed between the pair of fine line patterns. With the bit mark, it is possible to align with the exposed object that is transported in one direction at a certain speed. Therefore, the positional deviation between the reticle and the object to be exposed can be detected with a registration mark with high precision, and the control of the exposure time point of the object to be exposed during the movement can be performed with higher precision. The image of the mask pattern is positioned at a specific position of the object to be exposed for exposure.

Then, the face of the projection lens is provided with a bundling member having a circular opening having a smaller diameter than the field mirror. Thereby, the beam diameter that is emitted to the projection lens can be restricted by the bundling member provided on the surface of the projection lens and having a circular opening having a smaller diameter than the field lens. Therefore, the influence of the spherical aberration of the projection lens can be eliminated, and the resolution of the projection lens can be further improved, thereby further improving the resolution of the exposure pattern.

Hereinafter, embodiments of the present invention will be described in detail based on the accompanying drawings. Fig. 1 is a view showing an embodiment of the reticle 1 of the present invention, wherein (a) is a plan view and (b) is a cross-sectional view of the line X-X of (a) as viewed from the direction of the arrow. In the photomask 1, the image of the mask pattern is reduced and projected by the microlens on the object to be exposed which is disposed opposite to each other, and the mask substrate 2 and the microlens array 3 are provided.

The mask substrate 2 is formed with a plurality of mask patterns having a specific shape on one surface of the transparent substrate, and is an opaque film such as chromium (Cr) formed on the lower surface 4a of the transparent substrate 4 as shown in FIG. 1(b). A plurality of mask patterns 5 having a specific shape (for example, a matrix shape) are formed at six places. Then, in the four corners outside the mask pattern forming region 7 sandwiched between the two thick broken lines in the figure (a), a cross-shaped mask side pair formed by, for example, an opaque film as shown in FIG. 2(a) is formed. The bit mark 8 is aligned with the microlens array 3 described later. Further, in order to avoid the complexity of the drawing, in FIG. 1(a), the mask pattern 5 is simply indicated by a square shape.

The microlens array 3 is provided opposite to the above-described mask substrate 2. The microlens array 3 is configured to reduce the image of the mask pattern 5 of the mask substrate 2 on the object to be exposed in the opposite direction, as shown in FIG. 1(b), which corresponds to the mask substrate. a mask pattern 5 of 2, and a plurality of projection lenses 10 of, for example, a matrix shape are formed on the lower surface 9a of the other transparent substrate 9, and as shown in the figure, in a state where the optical axis coincides with the optical axis of the projection lens 10, As shown in FIG. 3, a field lens 11 for collecting incident light on the projection lens 10 is formed in the upper surface 9b; wherein the plurality of projection lenses 10 are used to reduce the projection of the plurality of mask patterns 5 in the opposite configuration. On the exposure body. Then, a light shielding film 12 made of an opaque film such as chromium (Cr) is formed on the outer regions of the field lens 11 and the projection lens 10. At this time, a bundling member having a circular opening having a smaller diameter than that of the field lens 11 can be provided on the surface of the projection lens 10. Thereby, the influence of the spherical aberration of the projection lens 10 can be eliminated, thereby improving the resolution of the projection lens. Further, in the present embodiment, as shown in FIG. 3, the diameter of the projection lens 10 is formed to be smaller than the diameter of the field lens 11, to obtain an effect substantially equivalent to the case where the cluster assembly is provided.

Further, in the upper surface 9b of the transparent substrate 9, as shown in Fig. 1, the four corners outside the lens forming region 13 which are sandwiched between the two thick broken lines are formed with an opaque film as shown, for example, in Fig. 2(b). The lens side alignment mark 14 of the cross-shaped opening is aligned with the mask substrate 2 in correspondence with the mask side alignment mark 8 of the above-described mask substrate 2. Further, the light shielding film 12 on the lower side 9a side of the transparent substrate 9 is formed with a quadrangular opening 15 corresponding to the lens side alignment mark 14 for the illumination light irradiated from the lower side 9a side of the transparent substrate 9 to penetrate. The illumination is on the lens side alignment mark 14.

Further, a surface of the microlens array 3 on which the plurality of projection lenses 10 are formed (the lower surface 9a) is provided with a registration mark (hereinafter referred to as "N-type alignment mark 16"). The N-type alignment mark 16 is for continuously aligning the mask pattern 5 of the mask substrate 2 with the exposure target position of the object to be exposed which is transported in one direction indicated by the arrow A in FIG. 1 during exposure. It is placed at the forefront in the direction in which the object to be exposed is indicated by the arrow A (hereinafter referred to as "substrate transfer direction") among the plurality of projection lenses 10 sandwiched between the two thick broken lines in FIG. The side projection lens 10 is a reference, and is disposed on the front side in the substrate conveyance direction (arrow A direction) at a certain distance. In addition, in order to observe the N-type alignment mark 16 from above the mask substrate 2, the opaque film 6 of the above-mentioned mask substrate 2 corresponding to the N-type alignment mark 16 region and the light shielding of the upper surface 9b of the microlens array 3 are provided. The film 12 is removed. In this manner, by forming the N-type alignment mark 16 on the same surface of the surface on which the projection lens 10 of the microlens array 3 is formed, the surface of the object to be exposed which is opposed to the mask 1 is aligned with the N-type alignment. The mark 16 is approached, so that the reference pattern previously formed on the object to be exposed and the N-type registration mark 16 can be simultaneously observed, thereby easily aligning the mask 1 with the object to be exposed. Moreover, even if the center of the mask pattern 5 is offset from the optical axis of the projection lens 10, since the projected image of the mask pattern 5 is formed on the optical axis of the projection lens 10, it is formed by using the projection lens 10 as a reference. By aligning the N-type alignment mark 16, the mask pattern 5 can be exposed to a specific position of the object to be exposed with high precision.

Here, the N-type alignment mark 16 is specifically provided by, for example, a pair of thin line patterns 17a and 17b parallel to the substrate conveyance direction (arrow A direction) as shown in FIG. 4, and is provided to the pair of thin line patterns 17a. And a slightly N-shaped mark formed by one of the fine line patterns 17c crossing the substrate transfer direction (arrow A direction) at a specific angle θ (for example, θ=45°) between 17b, as shown in Fig. 1(a) The N-type registration mark 16 is formed in a pattern in which the center line parallel to the substrate conveyance direction (arrow A direction) of the thin line pattern 17c coincides with the center of any one of the plurality of projection lenses 10. Further, the distance between the central axis orthogonal to the substrate transport direction (arrow A direction) of the N-type registration mark 16 and the projection lens 10 positioned toward the front side of the substrate transport direction of the microlens array 3 is set in advance. For distance D.

The above microlens array 3 can be formed in the following manner.

First, in the upper surface 9b of the transparent substrate 9, the lens forming region 13 is etched in a state of covering the outside of the lens forming region 13 (digging down to a depth of, for example, about 50 μm to 300 μm). A plurality of convex field mirrors 11 having a specific curvature are formed in the lens forming region 13 by a known technique. Next, after the light shielding film 12 such as chromium (Cr) is formed on the entire surface 9b of the transparent substrate 9, the portion corresponding to the field lens 11 and the light shielding film 12 corresponding to the N-type alignment mark 16 region are removed. . At the same time, the lens side alignment mark 14 can also be etched. Next, a plurality of convex projection lenses 10 corresponding to the field lens 11 are formed on the lens forming region 13 of the lower surface 9a of the transparent substrate 9 by a known technique. Then, after the light-shielding film 12 such as chromium (Cr) is formed on the entire surface 9a of the transparent substrate 9, the portion corresponding to the projection lens 10 and the portion corresponding to the lens-side alignment mark 14 are etched away. At this time, the N-type alignment mark 16 can also be formed at the same time.

Further, the N-type registration mark 16 may be provided not only in the photomask 1, but also in a plurality of directions in the direction in which the substrate is conveyed. At this time, a plurality of imaging units 24 (see FIG. 5) to be described later may be provided corresponding to the respective N-type registration marks 16. Thereby, the N-type registration mark 16 of any of the plurality of N-type registration marks 16 can be used to align the mask 1 with the object to be exposed. The reticle 1 provided with the above plurality of N-type alignment marks 16 is particularly suitable for exposure of a large-area exposed body.

Next, a method of manufacturing the photomask 1 of the present invention will be described.

First, in the upper aspect 9b of the microlens array 3, an adhesive is applied to a portion outside the lens forming region 13 of the field lens 11. Next, the lower surface 4a of the mask substrate 2 on which the mask pattern 5 is formed and the upper surface 9b of the microlens array 3 coated with the adhesive are faced to face the mask substrate 2 and the microlens array 3 . Next, while simultaneously observing the mask side alignment mark 8 and the lens side alignment mark 14 with a microscope, the mask substrate 2 and the microlens array 3 are relatively moved in parallel to make the two alignment marks coincide with each other. The center of the faces of the substrates 4, 9 is rotated by the axis to perform alignment. Then, the mask substrate 2 and the microlens array 3 are pressed from the side surfaces of the respective substrates 4 and 9, and the adhesive is cured to bond the two. Thereby, the photomask 1 of the present invention as shown in Fig. 1 is completed. At this time, the mask pattern 5 and the field lens 11 are close to a distance of about 50 μm to 300 μm.

Figure 5 is a front elevational view of an exposure apparatus using the reticle 1 of the present invention. The exposure apparatus exposes the object to be exposed 19 at a constant speed in one direction indicated by an arrow A, and is configured to include a transport mechanism 20, a light source 21, a coupling optical system 22, a mask pedestal 23, and an imaging mechanism. 24 and control mechanism 25.

The conveyance mechanism 20 mounts the object to be exposed 19 on the upper surface 20a and conveys it at a constant speed in the direction indicated by the arrow A, and ejects air from the upper surface 20a and sucks the air to balance the injection and suction of the air. On the other hand, the exposure body 19 is conveyed while the object to be exposed 19 is floated by a certain amount. Further, the transport mechanism 20 includes a speed sensor for detecting the moving speed of the object 19 to be exposed, and a position sensor (not shown) for detecting the position of the object 19 to be exposed.

A light source 21 is provided above the transport mechanism 20. The light source 21 emits ultraviolet light as a light source light and is a laser light source. Further, in the present embodiment, the light source 21 is intermittently illuminated by the control of the control unit 25 to be described later.

The coupling optical system 22 is provided in front of the light source 21 in the light emission direction. The coupling optical system 22 causes the light source light emitted from the light source 21 to be parallel light and is irradiated to the mask pattern forming region 7 of the mask 1 to be described later, and is configured to include optical components such as a light integrator or a collecting lens. Further, a mask having a cross-sectional shape in which the light source light is adjusted in accordance with the outer shape of the mask pattern forming region 7 of the mask 1 is also provided.

The upper surface 20a of the transport mechanism 20 is provided with a mask pedestal 23 in the opposite direction. The mask pedestal 23 is for positioning and holding the reticle 1 of the present invention, and is formed with an opening 26 at a central portion corresponding to the mask pattern forming region 7 of the reticle 1 and the formation region of the N-type alignment mark 16 To maintain the peripheral portion of the photomask 1. Then, a moving mechanism is also provided, which is controlled by a control unit 25 to be described later, and moves in a direction orthogonal to the substrate transport direction (arrow A direction) in a plane parallel to the upper surface 20a of the transport mechanism 20.

Above the transport mechanism 20, an imaging mechanism 24 that can capture the N-type registration mark 16 of the mask 1 held by the mask pedestal 23 is provided. The imaging unit 2 simultaneously captures the N-type registration mark 16 of the reticle 1 and a reference mark (for example, a pixel of the display substrate) formed in advance on the surface of the object to be exposed 19, which is in the upper aspect 20a of the transport mechanism 20. A linear camera in which a plurality of photosensitive elements are arranged in a line in a direction perpendicular to the substrate transport direction (arrow A direction) in a parallel direction.

A control mechanism 25 is provided in electrical communication with the transport mechanism 20, the light source 21, the mask pedestal 23, and the imaging unit 24. The control mechanism 25 moves the mask pedestal 23 according to the image captured by the imaging mechanism 24 and controls the light-emitting time point of the light source 21 to correct the positional deviation of the reticle 1 and the object to be exposed 19, as shown in FIG. The image processing unit 27, the memory 28, the calculation unit 29, the transport mechanism drive controller 30, the mask pedestal drive controller 31, the light source drive controller 32, and the control unit 33 are provided.

Here, the image processing unit 27 processes the captured image of the surface of the object to be exposed 19 captured by the imaging unit 24, and detects the reference pattern previously formed on the object to be exposed 19 by the change in luminance which is changed by exceeding a certain threshold. An edge portion that is slightly parallel to the substrate transport direction and an edge portion that intersects the substrate transport direction. Further, the memory 28 stores the moving distance target value TG _{1 of the} object to be exposed 19, the alignment target value TG _{2 of the} mask 1 and the object 19 to be exposed, and the substrate transport direction of the mask pattern 5 of the mask 1. The pitch P and the like are arranged, and the calculation result in the calculation unit 29 to be described later is temporarily memorized; wherein the moving distance target value TG ₁ of the object to be exposed 19 is on the front side of the substrate transport direction in which the reference pattern of the object to be exposed 19 is formed in advance. After the edge portion, the first exposure target position on the object to be exposed 19 reaches a target value of the moving distance of the object 19 to be exposed from the projection position of the image of the mask pattern 5 on the front side in the substrate transport direction of the reticle 1. Further, the calculation unit 29 calculates the moving distance of the object to be exposed 19 based on the output of the position sensor of the transport mechanism 20, and calculates the positional shift of the mask 1 and the object to be exposed 19 based on the output of the image processing unit 27. Quantity and so on. Then, the conveyance mechanism drive controller 30 controls the conveyance mechanism 20 to convey the object to be exposed 19 at a constant speed. Moreover, the mask pedestal drive controller 31 controls the movement of the mask pedestal 23 based on the output of the calculation unit 29 to correct the positional shift amount of the reticle 1 and the object to be exposed 19, and the light source drive controller 32 is used. A drive that controls the opening and closing of the light source 21. Then, the control unit 33 merges the control as a whole to drive the above-described respective elements appropriately.

Next, the operation of the exposure apparatus configured as described above will be described.

First, the amount of positional shift between the photomask 1 and the imaging center of the imaging mechanism 24 is measured in advance. It can be carried out in the following manner. That is, first, the N-type registration mark 16 of the mask 1 held by the mask pedestal 23 is imaged by the imaging unit 24, and the image processing unit 27 processes the image information and transports it from the substrate as shown in FIG. 7(a). The edge portion positions of the three dark portions corresponding to the thin line patterns 17a to 17c of the N-type registration mark 16 are detected by the change in luminance in the direction slightly orthogonal to the direction (arrow A direction), and the above calculations are respectively calculated in the calculation unit 29. The central location of the dark part. Next, the calculation unit 29 calculates the distances G ₁ and G ₂ between the adjacent two dark portions. Further, based on the difference between the distances G ₁ and G ₂ , the center line of the imaging center of the imaging unit 24 and the direction of the substrate transport direction (arrow A direction) orthogonal to the N-type registration mark 16 of the mask 1 is calculated. The amount G. At this time, when the inclination angle θ of the thin line pattern 17c with respect to the substrate conveyance direction (arrow A direction) is θ=45°, the offset amount G is G=(G ₁ -G ₂ )/2. Then, the offset G is added to the moving distance target value TG _{1 of the} exposed object 16 held by the memory 28 to correct the target value TG ₁ , and the corrected target value (TG ₁ + G) is saved. In memory 28.

Next, after the object to be exposed 19 is positioned and placed on the upper surface 20a of the transport mechanism 20, the transport mechanism drive controller 30 controls the driving of the transport mechanism 20 to start the exposure of the object to be exposed 19 at a constant speed in the direction of the arrow A. Transfer.

When the exposed body 19 is transported and the edge portion on the front side in the substrate transport direction (arrow A direction) reaches the imaging position of the imaging unit 24, the imaging unit 24 is conveniently photographed on the surface of the object 19 to be exposed. At this time, the image captured by the image pickup unit 24 performs image processing in the image processing unit 27, and changes the brightness from dark to bright from the substrate conveyance direction to detect the reference pattern and the substrate transfer previously formed on the object to be exposed 19. The edge of the direction intersects. Then, the position of the object to be exposed 19 at the time of detecting the edge portion of the reference pattern is detected based on the output of the position sensor of the transport mechanism 20.

Next, the calculation of the moving distance of the exposure body 19 is started in the calculation unit 29. Further, the calculation result is compared with the corrected target value (TG ₁ + G) which is moved by the exposure body 1 stored in the memory 28. Then, when the two match, the initial exposure target position on the exposure body 19 is positioned at the projection position of the image of the mask pattern 5 positioned on the foremost side toward the substrate transport direction of the reticle 1.

On the other hand, as shown in FIG. 8(a), the N-type registration mark 16 of the reticle 1 and the reference pattern 34 of the object 19 to be exposed are imaged by the imaging mechanism 24. The captured image is subjected to image processing by the image processing unit 27, and the luminance change in the direction of the orthogonal direction of the substrate transport direction (arrow A direction) is detected as shown in (b) to detect the difference between the adjacent two reference patterns 34. And the position of the edge portion of the three thin line patterns 17a to 17c corresponding to the N-type registration mark 16 which is slightly parallel to the substrate conveyance direction (arrow A direction). Then, the calculation unit 29 calculates the center position of each dark portion based on the position information. Further, in the calculation unit 29, for example, the distance G ₃ between the center position of the dark portion corresponding to the left side thin line pattern 17a and the center position of the dark portion corresponding to the adjacent two reference patterns 34 is calculated, and This is compared with the registration target value TG ₂ stored in the memory 28. Then, the mask pedestal drive controller 31 is controlled to move the mask pedestal 23 in the direction orthogonal to the substrate transport direction (arrow A direction) so that the distance G ₃ coincides with the alignment target value TG ₂ . Further, the alignment operation is continuously performed while the exposure body 19 is moving until the exposure to the exposed body 19 is all ended.

When the edge portion on the front side in the substrate conveyance direction (arrow A direction) of the reference pattern 34 of the object to be exposed 19 is detected by the image pickup unit 24, the object to be exposed 19 is moved to be equal to the corrected target value (TG ₁ + G). After the distance, the open command output from the calculation unit 29 is used as a trigger to activate the light source drive controller 32, and the light source 21 is turned on for a specific time. Thereby, the image of the mask pattern 5 on the front side in the substrate transport direction of the mask 1 is reduced in the initial exposure target position projected on the object to be exposed 19, and an exposure pattern having a shape similar to that of the mask pattern 5 is formed.

Thereafter, the calculation unit 29 calculates the moving distance of the object to be exposed 19 based on the output of the position sensor of the transport mechanism 20, and moves the substrate to be transported by the exposed object 19 to the substrate pattern 5 stored in the memory 28. When the arrangement pitch of the directions P is equal, the opening command is output to the light source drive controller 32. Thereby, each time the object to be exposed 19 moves by a distance equal to the arrangement pitch P of the substrate transfer direction of the mask pattern 5, the light source 21 is turned on at a specific time to perform exposure, so that the image of the mask pattern 5 is changed. The exposure target position on the exposed body 19 is sequentially exposed. Further, in the photomask 1 of the present embodiment, the same position on the object to be exposed 19 is arranged in a plurality of mask patterns 5 in the substrate transport direction (arrow A direction) (three mask patterns 5 are shown in FIG. 1). To show) and multiple exposures. Therefore, the power of the light source 21 can be reduced, thereby reducing the burden on the light source 21.

Further, in the above embodiment, the mask 1 in which the matrix mask pattern 5 is formed in parallel at a specific pitch has been described. However, the present invention is not limited thereto, and may be a mask 1 in a configuration manner. Forming a plurality of rows of mask pattern rows in which the mask patterns 5 are formed side by side in a direction orthogonal to the substrate transport direction at a specific pitch, and the subsequent mask pattern rows are respectively shifted in a direction slightly orthogonal to the substrate transport direction The specific size is shifted to fill the adjacent mask pattern 5 of the mask pattern row on the front side in the substrate transport direction by the mask pattern 5 of the subsequent mask pattern row. Thereby, the exposure pattern can be formed densely. In this case, the mask patterns of the plurality of rows may be arranged in a single group, and a plurality of arrays may be arranged in the substrate transport direction.

Further, in the above embodiment, the photomask 1 is described with respect to a case where one microlens array 3 is mounted on one mask substrate 2. However, the present invention is not limited thereto, and as shown in FIG. The substrate 2 is covered, and a plurality of microlens arrays 3 are arranged side by side in the longitudinal direction of the mask substrate 2. Thereby, the manufacturing cost of the microlens array 3 can be reduced, and the manufacturing cost of the photomask 1 can also be reduced.

Further, in the above-described embodiment, the case where the field lens 11 is formed by excavating a certain depth of the upper surface 9b of the transparent substrate 9 of the microlens array 3 will be described. However, the present invention is not limited thereto, and may be used in the above aspect. 9b is formed with a field lens 11, and the other substrate is bonded to the end surface of the transparent substrate 9 on which the projection lens 10 is formed in the lower surface 9a, and a specific shape is formed between the mask pattern 5 of the mask substrate 2 and the field lens 11 described above. gap. Alternatively, the spacer of a specific thickness may be disposed outside the lens forming region 13 on the upper surface 9b of the transparent substrate 9, and the spacer substrate 2 and the microlens array 3 may be bonded through the spacer. A specific gap is formed between the mask pattern 5 and the field lens 11.

In the above embodiment, the case where the exposure target 19 in the one-direction conveyance is exposed by the mask 1 is described. However, the present invention is not limited thereto, and the mask 1 may be used to stand still. The exposed body 19 in the state is exposed.

θ. . . angle

D. . . distance

G. . . Offset

G ₁ , G ₂ . . . distance

P. . . Arrangement spacing

1. . . Mask

2. . . Mask substrate

3. . . Microlens array

4. . . Transparent substrate

4a. . . The next aspect

5. . . Mask pattern

6. . . Opaque film

7. . . Mask pattern forming area

8. . . Mask side alignment mark

9. . . Transparent substrate

9a. . . The next aspect

9b. . . Upper aspect

10. . . Projection lens

11. . . Field mirror

12. . . Sunscreen

13. . . Lens forming area

14. . . Lens side alignment mark

15. . . Opening

16. . . N-type alignment mark

17a, 17b, 17c. . . Thin line pattern

19. . . Exposure body

20. . . Transport agency

20a. . . Upper aspect

twenty one. . . light source

twenty two. . . Coupling optical system

twenty three. . . Mask pedestal

twenty four. . . Camera mechanism

25. . . Control mechanism

26. . . Opening

27. . . Image processing department

28. . . Memory

29. . . Calculation department

30. . . Transport mechanism drive controller

31. . . Mask pedestal drive controller

32. . . Light source drive controller

33. . . Control department

34. . . Reference pattern

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an embodiment of a reticle of the present invention, wherein (a) is a plan view and (b) is a cross-sectional view of the line X-X of (a) as viewed from the direction of the arrow.

2 is an explanatory view showing an aspect of alignment marks for aligning the mask substrate of the photomask and the microlens array, wherein (a) is a mask side alignment mark, and (b) is a lens side pair. Bit mark.

Fig. 3 is a cross-sectional view showing the structure of the microlens array, showing an image of the mask pattern by using paraxial ray tracing.

Fig. 4 is a plan view showing the N-type registration mark of the above reticle.

Fig. 5 is a schematic view showing an exposure apparatus using the above-described photomask.

Fig. 6 is a block diagram showing the structure of a control mechanism of the above exposure apparatus.

Fig. 7 is an explanatory view showing the positional offset correction of the imaging center of the mask and the imaging unit by the N-type registration mark.

Fig. 8 is an explanatory view showing the correction of the positional deviation of the reticle and the object to be exposed.

Fig. 9 is a plan view showing another configuration example of the reticle of the present invention.

D. . . distance

P. . . Arrangement spacing

1. . . Mask

2. . . Mask substrate

5. . . Mask pattern

6. . . Opaque film

7. . . Mask pattern forming area

8. . . Mask side alignment mark

10. . . Projection lens

11. . . Field mirror

14. . . Lens side alignment mark

15. . . Opening

16. . . N-type alignment mark

17a, 17b, 17c. . . Thin line pattern

Claims (6)

A reticle includes a mask substrate formed with a plurality of mask patterns of a specific shape on one surface of the transparent substrate, and a microlens array formed with an image for the plurality of mask patterns on one surface of the other transparent substrate Reducing a plurality of projection lenses projected on the oppositely disposed object, and forming a plurality of field mirrors having an optical axis coincident with an optical axis of the projection lens on the other side of the other transparent substrate, wherein the plurality of field mirrors For focusing incident light on the projection lens; wherein the diameter of the projection lens is formed to be smaller than the aperture of the field lens, and the mask pattern has a specific gap with the field lens and is close to the opposite state The mask substrate is bonded to the microlens array. The reticle of claim 1, wherein a light shielding film is formed at an outer region of at least the plurality of projection lenses of the microlens array. The reticle of claim 1 or 2, wherein the surface of the microlens array on which the plurality of projection lenses are formed is provided with an alignment mark on the alignment with the object to be exposed based on the projection lens . The photomask of claim 3, wherein the exposed system is transported in a direction at a certain speed during exposure; the alignment mark is disposed at a certain distance from the transport direction of the object to be exposed. The front side of the area of the plurality of projection lenses. The photomask of claim 4, wherein the alignment mark is a pair of fine line patterns parallel to a direction in which the object to be exposed is conveyed, and is disposed between the pair of thin line patterns and the exposed object The conveying direction is formed by crossing a thin line pattern at a specific angle. The reticle of claim 1, wherein the projection lens is provided with a bundling member having a circular opening having a diameter smaller than the aperture of the field lens.