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TWI483357B - 封裝結構 - Google Patents

封裝結構 Download PDF

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Publication number
TWI483357B
TWI483357B TW101122590A TW101122590A TWI483357B TW I483357 B TWI483357 B TW I483357B TW 101122590 A TW101122590 A TW 101122590A TW 101122590 A TW101122590 A TW 101122590A TW I483357 B TWI483357 B TW I483357B
Authority
TW
Taiwan
Prior art keywords
stud
spherical
substrate
ball
bulb
Prior art date
Application number
TW101122590A
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English (en)
Other versions
TW201322389A (zh
Inventor
Chen Hua Yu
Mirng Ji Lii
Chung Shi Liu
Ming Da Cheng
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
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Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW201322389A publication Critical patent/TW201322389A/zh
Application granted granted Critical
Publication of TWI483357B publication Critical patent/TWI483357B/zh

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    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
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Description

封裝結構
本發明係有關於一種封裝結構，且特別是有關於一種堆疊式封裝層疊(package-on-package,PoP)之封裝結構。
電子元件可被分成簡單的層級，這些層級包括各種元件，這些元件例如積體電路晶片、封裝結構、印刷電路板(printed circuit board,PCB)與系統。封裝結構(package)是介於電子元件(例如電腦晶片)與印刷電路板之間的界面。電子元件由半導體材料，例如矽，所組成。積體電路組合成封裝結構，例如方塊形扁平封裝(quad flat pack,QFP)、針腳柵格陣列(pin grid array,PGA)、球閘陣列封裝(ball grid array,BGA)。組合積體電路的方法包括使用打線接合(wire bonding)、帶狀自動化黏合(tape automated bonding,TAB)、或覆晶接合(flip chip)組裝技術。封裝元件接著被直接接合到印刷電路板(printed wiring board)或接合到另一種類的基板，此另一種基板定義為封裝結構的第二層。
球閘陣列封裝(ball grid array,BGA)技術為進階的半導體封裝技術，其將半導體晶片接合到一基板的前表面，以及複數個導電元件(例如焊料球)排列成陣列，通常稱為球閘陣列，形成於該基板的後表面上。球閘陣列允許半導體封裝結構接合且電性連接到外部的印刷電路板或其他電子元件。球閘陣列(BGA)封裝可應用於記憶體中，例如動態隨機存取記憶體(Dynamic Random Access Memory)或其他記憶體元件。
一個基本的覆晶封裝(flip-chip,FC)技術包括積體電路、內連接系統與基板。功能性晶片連接到具有複數個焊料凸塊的基板，其中焊料凸塊形成介於晶片與基板之間的金屬內連線(metallurgical interconnection)。功能性晶片、焊料凸塊與基板形成一覆晶封裝。此外，複數個焊料球形成球閘陣列(BGA)。
打線接合(wire bonding)技術用於電性連接晶片構件(例如晶片電阻或晶片電容)到基板上。將兩個功能性晶片堆疊到複數基板層之頂表面上。這些晶片藉由複數個接合金線連接到基板上。亦可使用其他導線，例如鋁線。功能性晶片、金線與基板形成打線接合(wire bonding,WB)封裝。
堆疊式封裝層疊(package-on-package,PoP)為一允許積體電路(例如離散邏輯元件(discrete logic)與記憶體球閘陣列封裝(memory ball grid array))垂直結合之堆疊技術。兩個或兩個以上之封裝結構採取一個安裝於另一個之上的方式堆疊，並藉由一標準界面傳遞彼此的訊號。此封裝結構可達到高密度，例如應用於行動電話/PDA市場。
本發明提供一種封裝結構，包括：一第一基板；複數個球狀釘栓(stud bulb)耦合到該第一基板之第一表面；一晶粒黏著至該第一基板之第一表面；一第二基板；以及複數個電性連接結構耦合到該第二基板，每一個電性連接結構分別耦合到對應的球狀釘栓(stud bulb)。
本發明另提供一種封裝結構，包括：一第一基板包括一第一墊片位於該第一基板的一第一表面上，一晶粒附著 於該第一基板的一第一表面；一第二基板包括一第二墊片位於該第二基板的一第一表面上；一球狀釘栓(stud bulb)位於該第一墊片之上；以及一焊料連接結構(solder connector)耦合該球狀釘栓(stud bulb)到該第二墊片。
本發明又提供一種封裝結構，包括：一第一接合墊位於一第一基板的一第一表面上；一晶粒附著到該第一基板的第一表面；一第二接合墊位於一第二基板的一第二表面上，其中該第一表面相對於該第二表面，該晶粒設置於該第一表面與該第二表面之間；一球狀釘栓(stud bulb)位於該第一接合墊之上；以及焊料機械性地耦合該球狀釘栓(stud bulb)到該第二接合墊。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：
下述實施例舉例說明堆疊式封裝層疊結構(package-on-package,PoP)。然而，其他實施例亦可應用於其他封裝或結構，例如三維積體電路(3DIC)。
須注意的是，雖然此處所討論的方法實施例依照特定的順序進行，然而亦可依照其他任何合乎邏輯性的順序進行。再者，各種圖式與示範的實施例中，類似的標號代表類似的元件。
依據本發明之實施例，第1圖至第8圖顯示形成堆疊式封裝層疊結構(package-on-package,PoP)的第一種方法。於第1圖中，提供一第一基板10，例如，底層基板，其中 第一基板10具有墊片12位於其上表面。有機保焊劑(organic solderability preservative,OSP)14形成於每一個墊片12之上表面上。第一基板10可以是，例如有機基板，半導體晶圓，玻璃，矽中介層(silicon interposer)，有機中介層，或類似之材料或上述之組合。第一基板10可包括，例如未切割晶粒(unsingulated)或已切割晶粒及/或中介層。每一個晶粒及/或中介層可包括主動及/或被動元件及/或導通孔(through vias)。第一基板10亦可包括各種材料層，例如介電層、保護層及/或金屬層。
於一實施例中，墊片12可經由保護層，直接連接到位於頂部金屬層之各自圖案。於另一實施例中，墊片12於頂部金屬層各自具有一圖案。於又一實施例中，墊片12可以是各自暴露的導通孔部份及/或形成於各自的導通孔部份之上。於一實施例中，墊片12可以是金屬，金屬合金，或金屬複合層及/或金屬合金複合層。於本實施例中，墊片12是銅，於其他實施例中，墊片12可包括銅、金、鋁、鋁銅合金、鎳、類似之材料或上述之組合。墊片12提供一外部電性連接到各種裝置(device)及元件(component)，這些裝置及元件係形成於第一基板10之中及/或耦合到第一基板10。
於第2圖中，從每個墊片12移除有機保焊劑(organic solderability preservative,OSP)14，以暴露墊片12的上表面。有機保焊劑(organic solderability preservative,OSP)14可藉由任何適合的方式移除，例如塗佈助熔劑(flux)、化學溶液(酸或鹼)，類似之材料或上述之組合於基板上。
於第3圖中，墊片保護層16形成於每一個墊片12之 上。於一些實施例中，墊片保護層16為金屬、金屬合金、金屬或金屬合金複合層、類似之材料或上述之組合。金屬例如錫、鎳、鈀、金、類似之材料或上述之組合。墊片保護層16可以藉由，例如浸漬電鍍(immersion plating)、電鍍(electro-plating)、無電極電鍍(electroless-plating)、類似之方法或上述之組合所形成。於一實施例中，墊片保護層16為錫，藉由浸漬電鍍(immersion plating)形成。於另一實施例中，墊片保護層16為化學鍍鎳鈀金(electroless nickel,electroless palladium,immersion gold,ENEPIG)。於其他實施例中，墊片保護層16各別為自組裝單層(self-assembled monnolayer)且可包括帶有修飾官能基的C4 -C30 烷基，其中官能基例如硫醇類(thiol)或醇基，官能基藉由浸漬、旋轉塗佈、印刷、類似之方法或上述之組合而形成。
於第4圖中，球狀釘栓(stud bulb)18形成於墊片保護層16之上。球狀釘栓(stud bulb)18之形成方法，例如，熔化導線的尖端，以於導線的每一個尖端形成球狀物。球狀物接著放置到墊片保護層16之上，藉由施加機械力、熱及/或超音波能量，以接合球狀物與墊片保護層16。之後，位於球狀物之上的導線被破壞(或因為外力、熱及/或超音波能量，而使先前的球狀物形狀受到破壞)。使用於此步驟之導線可以是銅、金、鋁、銀、合金、類似之材料或上述之組合。導線亦可以是摻雜元素的金屬。此外，導線可以是第一金屬外鍍第二金屬，例如，銅導線外鍍鈀。導線的直徑為約0.3-5密爾(mils)，例如1.5密爾。球狀釘栓(stud bulb)18因此具有與導線相同之材料。
於第5圖中，球狀釘栓保護塗層(bulb protective coating)20形成於各自的球狀釘栓(stud bulb)18之上。於一些實施例中，球狀釘栓保護塗層20可以是金屬、金屬合金、金屬或金屬合金複合層、類似之材料或上述之組合。金屬例如錫、鎳、鈀、金、銀、類似之材料或上述之組合。球狀釘栓保護塗層20可以藉由，例如浸漬電鍍(immersion plating)、電鍍(electro-plating)、無電極電鍍(electroless-plating)、類似之方法或上述之組合所形成。於一實施例中，球狀釘栓保護塗層20為錫，藉由浸漬電鍍(immersion plating)形成。於另一實施例中，球狀釘栓保護塗層20為化學鍍鎳鈀金(electroless nickel,electroless palladium,immersion gold,ENEPIG)。於其他實施例中，球狀釘栓保護塗層20各別為自組裝單層(self-assembled monnolayer)且可包括帶有修飾官能基的C4 -C30 烷基，其中官能基例如硫醇類(thiol)或醇基，官能基藉由浸漬、旋轉塗佈、印刷、類似之方法或上述之組合而形成。於又一實施例中，球狀釘栓保護塗層20分別為有機保焊劑(organic solderability preservative,OSP)，且藉由適合的技術所形成。球狀釘栓保護塗層20可提供一保護層於球狀釘栓(stud bulb)18之上，以避免球狀釘栓(stud bulb)18氧化，例如，當球狀釘栓(stud bulb)18是銅時，避免銅氧化物形成於球狀釘栓(stud bulb)18之上。
於第6圖中，提供一第二基板22，例如上層基板。第二基板可具有任何結構特徵或組成，如同前述之第一基板10。第二基板22具有墊片24，且墊片24位於第二基板22 之底表面上。於一實施例中，墊片24藉由穿過一保護層，直接連接到金屬層中各自的圖案。於另一實施例中，墊片24於金屬層中各自具有一圖案。墊片24可以是各自暴露的導通孔部份及/或形成於各自的導通孔部份之上。墊片24可以是金屬，金屬合金，或金屬複合層及/或金屬合金複合層。於一實施例中，墊片24是銅，於其他實施例中，墊片24可包括銅、金、鋁、鋁銅合金、類似之材料或上述之組合。墊片24提供一外部電性連接到各種裝置(device)及元件(component)，這些裝置及元件係形成於第二基板22之中及/或耦合到第二基板22。焊料26形成於墊片24之上。焊料26可以是任何焊料材料，例如不含鉛之焊料或類似之材料，且藉由適合的方法所形成。
於第7圖中，形成於第二基板22之上的焊料26接觸第一基板10之上的球狀釘栓(stud bulb)18，並且進行回焊，藉此形成已回焊之焊料連接結構(reflowed solder connector)28。已回焊之焊料連接結構(reflowed solder connector)28提供機械與電性連接，以連接第一基板10上的球狀釘栓(stud bulb)18與第二基板22上的墊片24。於第8圖中，模造化合物(molding compound)30分佈(disperse)於第一基板10與第二基板22之間的空間，且圍繞第一基板10與第二基板22之間的連接結構。模造化合物(molding compound)30可以是任何適合的材料，例如環氧樹脂或類似之材料。於其他實施例中，底部填充物、非導電膠、非導電薄膜或其他介電薄膜皆可用於取代模造化合物(molding compound)30。
值得一提的是，實施例(例如第8圖中的結構)可包括未繪製於圖中的其他結構特徵。舉例而言，第一基板10與第二基板22可各自具有額外的電性連接結構於各自的另一表面上。第一基板10的底表面與第二基板22的頂表面可具有球狀釘栓(stud bulb)、微凸塊(microbumps)、細小凸塊(minibumps)、柱狀結構(pillars)、柱形結構(columns)、球閘陣列(BGA balls)、控制塌陷高度晶片連接(controlled collapse chip connection bumps,C4 bumps)、類似之結構或上述之組合。此外，晶粒可位於第一基板與第二基板之任意表面上。舉例而言，晶粒可藉由電性連接結構接合到第一基板10與第二基板22各自的頂表面及/或底表面。於表面上可形成任意個晶粒。實施例中的其他結構特徵為熟知本領域人士可輕易得知。
依據本發明之實施例，第9圖到第14圖顯示本發明形成堆疊式封裝層疊結構(package-on-package,PoP)之第二種方法。於此實施例中，第一基板10與墊片12依據第1圖與第2圖所討論之步驟所形成。於第9圖中，墊片12的頂表面經過處理，形成已處理之表面(treated surface)32。處理步驟可以加強後續形成之球狀釘栓(stud bulb)與墊片之間的接合能力。於一實施例中，處理步驟包括使用氨氣(ammonia,NH3 )、氬氣(Ar)、氧氣(O2 )、臭氧(O3 )、氫氣(H2 )、氮氣(N2 )、甲烷電漿。於另一實施例中，處理步驟包括對墊片12摻雜鍺(Ge)。亦可使用本領域人士所熟知的其他電漿處理步驟或其他摻雜物。
於第10圖中，使用如第4圖所討論之方法或類似之方 法，將球狀釘栓(stud bulb)18形成於已處理之表面(treated surface)32上。於第11圖中，使用先前於第5圖所討論之方法或類似之方法，將球狀釘栓保護塗層20形成於各自的球狀釘栓(stud bulb)18之上。第12圖至第14圖顯示提供第二基板，藉由回焊結合第一基板10與第二基板22，且使用先前於第6-8圖所討論之方法或類似之方法，提供模造化合物30於第一基板10與第二基板22之間。如先前實施例所討論，第14圖中的結構可具有其他並未顯示的結構特徵。
依據本發明之實施例，第15圖至第19圖顯示本發明形成堆疊式封裝層疊結構(package-on-package,PoP)之第三種方法。於此實施例中，第一基板10與墊片12依據第1圖與第2圖所討論之步驟所形成。於第15圖中，使用先前於第4圖所討論之方法或類似之方法，球狀釘栓(stud bulb)18直接形成於墊片12之上。於此實施例中，球狀釘栓(stud bulb)18可藉由直接金屬-金屬接合方法(direct metal-metal bond)接合到墊片12。球狀釘栓(stud bulb)18與墊片12可由相同材料所組成，例如銅、鋁、銅鋁合金、類似之材料或上述之組合。於其他實施例中，球狀釘栓(stud bulb)18可使用與墊片12不同的材料，舉例而言，當墊片12包括鋁或鋁銅合金時，球狀釘栓(stud bulb)18可包括銅。第16圖至第19圖顯示形成球狀釘栓保護塗層20於各自的球狀釘栓(stud bulb)18之上，提供第二基板22，藉由回焊接合第一基板10到第二基板22，以及使用先前於第5-8圖所討論之方法或類似之方法，提供模造化合物30於第一基板 10與第二基板22之間。如先前實施例所討論，第19圖之結構可包括未顯示之結構特徵。
依據本發明之實施例，第20圖至第24圖顯示球狀釘栓(stud bulb)18的各種形狀特徵，其中的任何形狀特徵亦可使用於先前的實施例中。第20圖顯示單一球狀釘栓(stud bulb)40，例如先前圖示中所顯示的球狀釘栓(stud bulb)18。單一球狀釘栓(stud bulb)40之形成可藉由熔化導線的尖端，於尖端形成球狀物。此球狀物接著放置於接合的表面上，藉由施加機械力、熱及/或超音波能量，以接合球狀物到接合表面。之後，位於球狀物之上的導線被破壞(或因為外力、熱及/或超音波能量，而使先前的球狀物形狀受到破壞)。單一球狀釘栓(stud bulb)40的直徑D為約0.3-5密爾(mils)，例如1.5密爾。單一球狀釘栓(stud bulb)40的高度H為約20-200微米(micrometers)，例如為約150微米。
第21圖顯示具有延伸尾狀物(elongated tail)44的單一球狀釘栓(stud bulb)42。形成具有延伸尾狀物(elongated tail)44的單一球狀釘栓(stud bulb)42之方法，例如，使用先前於第20圖所討論的形成單一球狀釘栓(stud bulb)40之方法或類似之方法，差異在於破壞與單一球狀釘栓(stud bulb)42間隔一段距離的導線，以留下延伸尾狀物(elongated tail)44。於其他實施例中，可調整其他製程的條件，以形成延伸尾狀物(elongated tail)44。延伸尾狀物(elongated tail)44具有高度H1為約10-200微米，例如為約100微米，且單一球狀釘栓(stud bulb)42具有高度H2為約5-80微米，例如為約50微米。
第22圖與第23圖各自顯示堆疊的單一球狀釘栓(stud bulb)。於第22圖中，單一球狀釘栓(stud bulb)46與48依序使用先前於第20圖所討論之形成單一球狀釘栓(stud bulb)40之方法或類似之方法所形成。於此實施例中，單一球狀釘栓(stud bulb)46與48具有相同的材料。舉例而言，單一球狀釘栓(stud bulb)46與48各自為銅。於第23圖中，單一球狀釘栓(stud bulb)50與52依序使用先前於第20圖所討論之形成單一球狀釘栓(stud bulb)40之方法或類似之方法所形成。於此實施例中，單一球狀釘栓(stud bulb)50與52具有不同的材料。舉例而言，單一球狀釘栓(stud bulb)50為金，單一球狀釘栓(stud bulb)52為銅。雖然第22圖與第23圖顯示2個單一球狀釘栓(stud bulb)，但是其他實施例可涵蓋(contemplate)多個單一球狀釘栓(stud bulb)，其中這些單一球狀釘栓(stud bulb)可為堆疊結構及/或包括各種材料之組合。
第24圖顯示單一球狀釘栓(stud bulb)的堆疊結構，堆疊結構的其中之一具有延伸尾狀物(elongated tail)。單一球狀釘栓(stud bulb)56具有延伸尾狀物(elongated tail)58，並且堆疊於單一球狀釘栓(stud bulb)54之上。單一球狀釘栓(stud bulb)54之形成係使用先前於第20圖所討論的形成單一球狀釘栓(stud bulb)之方法或類似之方法。具有延伸尾狀物(elongated tail)58的球狀釘栓(stud bulb)56之形成則是使用先前於第21圖所討論的形成具有延伸尾狀物(elongated tail)44的球狀釘栓(stud bulb)42之方法或類似之方法所形成。球狀釘栓(stud bulb)54與56可包括相同或不 同之材料，如第22圖與23圖所討論，此外，可包括其他單一球狀釘栓(stud bulb)堆疊結構。
第25圖至第28圖顯示其他實施例。第25圖與第26圖顯示：墊片12、墊片保護層16、球狀釘栓(stud bulb)18、球狀釘栓保護塗層20、已回焊之焊料連接結構(reflowed solder connector)28、墊片24，如同顯示於第8圖中的實施例。第25圖顯示單一球狀釘栓(stud bulb)18a對應於球狀釘栓(stud bulb)18。第26圖顯示，單一球狀釘栓(stud bulb)18b具有較高的高度及/或延伸尾狀物對應於球狀釘栓(stud bulb)18。於第25圖與第26圖中，舉例而言，墊片保護層16為化學鍍鎳鈀金(electroless nickel,electroless palladium,immersion gold,ENEPIG)。已回焊之焊料連接結構(reflowed solder connector)28沾潤於(wetted)墊片保護層16之頂表面，使得位於球狀釘栓(stud bulb)18之外的墊片保護層16之頂表面的全部(entirety)為已回焊之焊料連接結構28所接觸。須注意的是，頂表面的全部(entirety)是指大致上包括整個頂表面的全部，亦即依據適當的製程(如同本文所提及之製程)所造成的結果，如本領域人士應能了解此用語(entirety，全部)。
雖然並未特別顯示，當已處理之表面32(第14圖)及/或墊片12(第19圖)各別之頂表面做為球狀釘栓(stud bulb)18的接合表面時，焊料連接結構28可沾潤這些表面，類似於第25圖與第26圖。於其他實施例中，已回焊之焊料連接結構28可能不會沾潤已處理之表面32(第14圖)及/或墊片12(第19圖)各別之頂表面。
第27圖與第28圖顯示：墊片12、墊片保護層16、球狀釘栓(stud bulb)18、球狀釘栓保護塗層20、已回焊之焊料連接結構28、墊片24，如同顯示於第8圖中的實施例。第27圖顯示單一球狀釘栓(stud bulb)18a對應於球狀釘栓(stud bulb)。第28圖顯示單一球狀釘栓(stud bulb)18b具有較高的高度及/或延伸尾狀物對應於球狀釘栓(stud bulb)18。於第27圖與第28圖中，舉例而言，墊片保護層16為浸鍍錫(immersion tin)、自組裝單層(self-assembled monnolayer)或有機保焊劑(organic solderability preservative,OSP)結構。已回焊之焊料連接結構28並未沾潤墊片保護層16之頂表面，因此沿著墊片保護層16的周圍部份70並未接觸已回焊之焊料連接結構28，且周圍部份70被暴露在外。
第29圖顯示部份接合(partial joint)。舉例而言，當回焊時，焊料26不足以完全覆蓋球狀釘栓(stud bulb)18，因而形成部份接合。第29圖顯示具有較高的高度及/或延伸尾狀物的球狀釘栓(stud bulb)18，以接合到接合表面72。球狀釘栓保護塗層20形成於球狀釘栓(stud bulb)18之上。圍繞於球狀釘栓(stud bulb)18的已回焊後之焊料連接結構(reflowed solder connector)28被回焊且連接到接合表面74。舉例而言，接合表面72可以是墊片保護層16、已處理後表面(treated surface)32或墊片12，而接合表面74可以是墊片24。已回焊之焊料連接結構(reflowed solder connector)28並未完全覆蓋球狀釘栓(stud bulb)18b，且暴露出一部份的球狀釘栓保護塗層20。須注意的是，可以使 用各種不同的球狀釘栓(stud bulb)結構，例如單一球狀釘栓(stud bulb)、堆疊球狀釘栓(stud bulb)、具有較高高度的單一球狀釘栓(stud bulb)、具有延伸尾狀物之球狀釘栓(stud bulb)或上述之組合。
第30-33圖顯示球狀釘栓(stud bulb)的各種變化實施例。舉例而言，第30圖描述第25圖之結構，差異在於新增介金屬化合物(inter-metal compound,IMC)80。介金屬化合物(inter-metal compound,IMC)80形成於墊片保護層16的部份之上，該墊片保護層16的部份係指於回焊製程的過程中，被回焊的焊料所接觸的部份。介金屬化合物(IMC)80藉由下述方法形成，於回焊過程中，藉由焊料26中的材料與墊片保護層16反應而得。介金屬化合物(IMC)80可以是銅錫合金(例如Cu3 Sn或Cu6 Sn5 )，鎳錫合金(例如Ni3 Sn4 )、類似之材料或上述之組合。
舉例而言，第31圖顯示第27圖中的結構，差異在於包括介金屬化合物(IMC)82且不包括球狀釘栓保護塗層20。介金屬化合物(IMC)82形成於球狀釘栓(stud bulb)18a的部份之上，且該球狀釘栓(stud bulb)18a的部份係指於回焊製程的過程中，被回焊的焊料所接觸的部份。介金屬化合物(IMC)82藉由下述方法形成，於回焊過程中，藉由焊料26中的材料與球狀釘栓(stud bulb)18a反應而得。介金屬化合物(IMC)82可以是銅錫合金(例如Cu3 Sn或Cu6 Sn5 )或類似之材料。
於類似第31圖的實施例中，在對焊料26進行回焊步驟之前，球狀釘栓保護塗層20可形成於或可不形成於球狀 釘栓(stud bulb)18a之上。如此處所述，如果不形成球狀釘栓保護塗層20，介金屬化合物(IMC)82直接形成於球狀釘栓(stud bulb)18a之上。於一實施例中，如果形成球狀釘栓保護塗層20，於回焊過程中，球狀釘栓保護塗層20會被熔解，使介金屬化合物(IMC)82直接形成於球狀釘栓(stud bulb)18a之上。再者，雖然此處未描述，但可包括下述之實施例，在球狀釘栓(stud bulb)18a外表面之上具有球狀釘栓保護塗層20，且介金屬化合物(IMC)82直接形成於球狀釘栓保護塗層20之外表面上。於此實施例中，介金屬化合物(IMC)82可藉由類似於第31圖所討論之方法而形成。
舉例而言，第32圖描述第30圖的結構，差異在於包括介金屬化合物(IMC)82且不包括球狀釘栓保護塗層20。介金屬化合物(IMC)82形成於球狀釘栓(stud bulb)18a的部份之上，且該球狀釘栓(stud bulb)18a的部份係指於回焊製程的過程中，被回焊的焊料所接觸的部份。介金屬化合物(IMC)82可以是銅錫合金(例如Cu3 Sn或Cu6 Sn5 )或類似之材料。
於類似第32圖的實施例中，在對焊料26進行回焊步驟之前，球狀釘栓保護塗層20可形成於或可不形成於球狀釘栓(stud bulb)18a之上。如此處所述，如果不形成球狀釘栓保護塗層20，介金屬化合物(IMC)82直接形成於球狀釘栓(stud bulb)18a之上。於一實施例中，如果形成球狀釘栓保護塗層20，於回焊過程中，球狀釘栓保護塗層20會被熔解，使介金屬化合物(IMC)82直接形成於球狀釘栓(stud bulb)18a之上。再者，雖然此處未描述，但可包括下述之 實施例，在球狀釘栓(stud bulb)18a外表面之上具有球狀釘栓保護塗層20，且介金屬化合物(IMC)82直接形成於球狀釘栓保護塗層20之外表面上。於此實施例中，介金屬化合物(IMC)82可藉由類似於第32圖所討論之方法而形成。
舉例而言，第33圖敘述第29圖的結構，差異在於包括介金屬化合物(IMC)84且不包括球狀釘栓保護塗層20。介金屬化合物(IMC)84形成於球狀釘栓(stud bulb)18b的部份之上，且該球狀釘栓(stud bulb)18b的部份係指於回焊製程的過程中，被回焊的焊料所接觸的部份。如前述所討論的部份接合，一部份球狀釘栓(stud bulb)18b並未被金屬化合物(IMC)84或是已回焊之焊料連接結構(reflowed solder connector)28所覆蓋。介金屬化合物(IMC)84藉由下述方法形成，於回焊過程中，藉由焊料26中的材料與球狀釘栓(stud bulb)18b反應而得。介金屬化合物(IMC)84可以是銅錫合金(例如Cu3 Sn或Cu6 Sn5 )或類似之材料。
於類似第33圖的實施例中，在對焊料26進行回焊步驟之前，球狀釘栓保護塗層20可形成於或可不形成於球狀釘栓(stud bulb)18b之上。如此處所述，如果不形成球狀釘栓保護塗層20，介金屬化合物(IMC)84直接形成於球狀釘栓(stud bulb)18b之上。於一實施例中，如果形成球狀釘栓保護塗層20，於回焊過程中，球狀釘栓保護塗層20會被熔解，使介金屬化合物(IMC)84直接形成於球狀釘栓(stud bulb)18b之上。再者，雖然此處未描述，但可包括下述之實施例，在球狀釘栓(stud bulb)18b外表面之上具有球狀釘栓保護塗層20，且介金屬化合物(IMC)84直接形成於球狀 釘栓保護塗層20之外表面上。於此實施例中，介金屬化合物(IMC)84可藉由類似於第33圖所討論之方法而形成。
第34圖與第35圖分別描述封裝結構的元件佈局圖與剖面圖。封裝結構包括基板90(例如於上述實施例之第一基板10)、球狀釘栓(stud bulb)92位於基板90頂表面之上與一晶粒94附著於基板90頂表面之上。如第35圖所示，電性連接結構(electrical connector)96連接晶粒94到基板90。電性連接結構(electrical connector)96可以是，例如，微凸塊(microbumps)、細小凸塊(minibumps)、控制塌陷高度晶片連接(controlled collapse chip connection bumps,C4 bumps)或類似之結構。第34圖與第35圖亦顯示介於球狀釘栓(stud bulb)92之間的間距(pitch)P。舉例而言，間距，小於100微米，或介於50-90微米之間，例如80微米。須注意的是，此結構可以是堆疊式封裝層疊結構(package-on-package,PoP)的底層基板，並且可以具有，例如，球閘陣列封裝球(ball grid array ball,BGA ball)位於底表面上。此外，其他封裝結構(例如顯示於第1-19圖中的實施例)可位於該結構之頂表面，以形成堆疊式封裝層疊結構(package-on-package,PoP)。
第36圖顯示本發明一實施例之堆疊式封裝層疊結構(package-on-package,PoP)。第36圖中的結構包括如第34圖與第35圖所討論之元件。該結構尚包括電性連接結構98，例如球閘陣列封裝球(ball grid array ball,BGA ball)位於基板90之底表面上。此外，第二基板102藉由回焊後之焊料連接結構(reflowed solder connector)100附著到基板 90，回焊後之焊料連接結構100耦合到第二基板的底表面。如前述實施例所述，圍繞於球狀釘栓(stud bulb)92之回焊後之焊料連接結構100被回焊。第二晶粒104藉由電性連接結構106附著到第二基板102之頂表面上，電性連接結構106同於或類似於電性連接結構96。先前所討論的球狀釘栓(stud bulb)的結構特徵或其他元件亦可應用於第36圖的結構中。再者，額外的晶粒可位於結構之上，例如位於基板90與102之底表面上及/或位於基板90與102之頂表面之上。甚至於，其他封裝結構可形成於第二基板102之頂表面之上，第二基板102可使用或可不使用此處所述之球狀釘栓(stud bulb)或其他結構特徵。
第37圖至第40圖顯示合併先前所述之結構特徵所形成的各種封裝結構，這些封裝結構亦可使用於第36圖中的堆疊式封裝層疊結構(package-on-package,PoP)。第37圖至第40圖包括第34圖與第35圖之元件，因此，不詳細討論位於第37圖至第40圖中的元件。於第37圖中，封裝結構包括球狀釘栓(stud bulb)110，其中球狀釘栓(stud bulb)110之高度高於晶粒94之頂表面。舉例而言，球狀釘栓(stud bulb)110之高度為約20-80微米，例如約50微米。球狀釘栓(stud bulb)110之直徑為約10-80微米，例如約30微米。
於第38圖中，封裝結構包括堆疊的球狀釘栓(stud bulb)112，其中球狀釘栓(stud bulb)112包括兩個單一球狀釘栓(stud bulb)。堆疊的球狀釘栓(stud bulb)112之高度高於晶粒94之頂表面。舉例而言，堆疊的球狀釘栓(stud bulb)112之高度為約30-200微米，例如約150微米。球狀 釘栓(stud bulb)110之直徑為約20-150微米，例如約80微米。
於第39圖中，封裝結構包括具有延伸尾狀物之球狀釘栓(stud bulb)114。具有延伸尾狀物之球狀釘栓(stud bulb)114之高度高於晶粒94之頂表面。舉例而言，具有延伸尾狀物之球狀釘栓(stud bulb)114之高度為約30-200微米，例如約150微米。具有延伸尾狀物之球狀釘栓(stud bulb)114之直徑為約20-150微米，例如約80微米。
於第40圖中，封裝結構包括具有球狀釘栓(stud bulb)116。球狀釘栓(stud bulb)116之高度低於晶粒94之頂表面。舉例而言，球狀釘栓(stud bulb)116之高度為約10-50微米，例如約30微米。球狀釘栓(stud bulb)116之直徑為約5-50微米，例如約30微米。於一實施例中，形成球狀釘栓(stud bulb)116之製法包括降低球狀釘栓(stud bulb)116之高度及/或直徑，例如藉由雷射鑽孔技術(laser drilling)。
藉由形成球狀釘栓(stud bulb)於堆疊式封裝層疊結構(package-on-package,PoP)中，連線於封裝結構的連接結構彼此之間的間距(pitch)，可小於100微米，因此，可以增加連接結構的密度。再者，於實施例中，可藉由選擇導線及/或製程參數的控制決定球狀釘栓(stud bulb)的高度與間距。製作球狀釘栓(stud bulb)的製程是可調整的(flexible)，且可適用於各種封裝尺寸。此外，實施例中亦可使用各種材料，這些材料可與習知的製程相容(compatible)。
本發明第一實施例是一種封裝結構，包括：一第一基板；複數個球狀釘栓(stud bulb)耦合到該第一基板之第一表 面；一晶粒黏著至該第一基板之第一表面；一第二基板；以及複數個電性連接結構耦合到該第二基板，每一個電性連接結構分別耦合到對應的球狀釘栓(stud bulb)。
本發明另一實施例是一種封裝結構，包括：一第一基板包括一第一墊片位於該第一基板的一第一表面上，一晶粒附著於該第一基板的一第一表面；一第二基板包括一第二墊片位於該第二基板的一第一表面上；一球狀釘栓(stud bulb)位於該第一墊片之上；以及一焊料連接結構(solderconnector)耦合該球狀釘栓(stud bulb)到該第二墊片。
本發明又一實施例是一種封裝結構之形成方法。方法包括提供一第一基板，一第一墊片形成於該第一基板的一第一表面上，一晶粒附著於該第一基板的一第一表面；形成一球狀釘栓(stud bulb)於該第一墊片之上；提供一第二基板，其中一第二墊片位於該第二基板的一第一表面上；以及耦合一電性連接結構到該球狀釘栓(stud bulb)與該第二墊片。
本發明又提供一種封裝結構，包括：一第一接合墊位於一第一基板的一第一表面上；一晶粒附著到該第一基板的第一表面；一第二接合墊位於一第二基板的一第二表面上，其中該第一表面相對於該第二表面，該晶粒設置於該第一表面與該第二表面之間；一球狀釘栓(stud bulb)位於該第一接合墊之上；以及焊料機械性地耦合該球狀釘栓(stud bulb)到該第二接合墊。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者， 在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10‧‧‧基板
12‧‧‧墊片
14‧‧‧有機保焊劑(organic solderability preservative,OSP)
16‧‧‧墊片保護層
18‧‧‧球狀釘栓(stud bulb)
20‧‧‧球狀釘栓保護塗層
22‧‧‧第二基板
24‧‧‧墊片
26‧‧‧焊料
28‧‧‧已回焊之焊料連接結構(reflowed solder connector)
30‧‧‧模造化合物(molding compound)
32‧‧‧已處理之表面(treated surface)
40‧‧‧單一球狀釘栓(stud bulb)
42‧‧‧單一球狀釘栓(stud bulb)
44‧‧‧延伸尾狀物(elongated tail)
46、48‧‧‧單一球狀釘栓(stud bulb)
50、52、54、56‧‧‧單一球狀釘栓(stud bulb)
58‧‧‧延伸尾狀物(elongated tail)
70‧‧‧沿著墊片保護層的周圍部份
72、74‧‧‧接合表面
80、82、84‧‧‧介金屬化合物(inter-metal compound,IMC)
90‧‧‧基板
92‧‧‧球狀釘栓(stud bulb)
94‧‧‧晶粒
96、98‧‧‧電性連接結構(electrical connector)
100‧‧‧回焊後之焊料連接結構(reflowed solder connector)
102‧‧‧第二基板
104‧‧‧第二晶粒
106‧‧‧電性連接結構(electrical connector)
110‧‧‧球狀釘栓(stud bulb)
112‧‧‧堆疊的球狀釘栓(stud bulb)
114‧‧‧具有延伸尾狀物之球狀釘栓(stud bulb)
116‧‧‧球狀釘栓(stud bulb)
第1~8圖為一系列剖面圖，用以本發明一實施例之形成堆疊式封裝層疊結構(package-on-package,PoP)的第一種方法。
第9~14圖為一系列剖面圖，用以說明本發明一實施例之形成堆疊式封裝層疊結構(package-on-package,PoP)的第二種方法。
第15~19圖為一系列剖面圖，用以說明本發明一實施例之形成堆疊式封裝層疊結構(package-on-package,PoP)的第三種方法。
第20圖為一剖面圖，用以說明本發明一實施例之單一球狀釘栓(stud bulb)。
第21圖為一剖面圖，用以說明本發明一實施例之具有延伸尾狀物(elongated tail)的單一球狀釘栓(stud bulb)。
第22圖為一剖面圖，用以說明本發明一實施例之具有相同材料的球狀釘栓(stud bulb)堆疊結構。
第23圖為一剖面圖，用以說明本發明一實施例之具有不同材料的球狀釘栓(stud bulb)堆疊結構。
第24圖為一剖面圖，用以說明本發明一實施例之球狀釘栓(stud bulb)之堆疊結構，其中一個球狀釘栓(stud bulb)具有延伸尾狀物。
第25圖為一剖面圖，用以說明本發明一實施例之單一 球狀釘栓(stud bulb)與已回焊之焊料連接結構(reflowed solder connector)之接合結構，其中已回焊之焊料連接結構沾潤於(wetted)墊片保護層。
第26圖為一剖面圖，用以說明本發明一實施例之具有較高高度及/或延伸尾狀物之單一球狀釘栓(stud bulb)與已回焊之焊料連接結構(reflowed solder connector)之接合結構，其中已回焊之焊料連接結構沾潤於(wetted)墊片保護層。
第27圖為一剖面圖，用以說明本發明一實施例之單一球狀釘栓(stud bulb)與已回焊之焊料連接結構(reflowed solder connector)之接合結構，其中已回焊之焊料連接結構不沾潤(wetted)墊片保護層。
第28圖為一剖面圖，用以說明本發明一實施例之具有較高高度及/或延伸尾狀物之單一球狀釘栓(stud bulb)與已回焊之焊料連接結構(reflowed solder connector)之接合結構，其中已回焊之焊料連接結構不沾潤(wetted)墊片保護層。
第29圖為一剖面圖，用以說明本發明一實施例之部份接合(partial joint)。
第30圖為一剖面圖，用以說明本發明一實施例之單一球狀釘栓(stud bulb)與介金屬化合物(IMC)形成於墊片保護層之上的接合結構。
第31圖為一剖面圖，用以說明本發明一實施例之單一球狀釘栓(stud bulb)與介金屬化合物(IMC)形成於其上之接合結構。
第32圖為一剖面圖，用以說明本發明一實施例之單一球狀釘栓(stud bulb)與介金屬化合物(IMC)形成於墊片保護層與單一球狀釘栓(stud bulb)之上之接合結構。
第33圖為一剖面圖，用以說明本發明一實施例之介金屬化合物(IMC)形成於球狀釘栓(stud bulb)之上之接合結構。
第34圖為依據本發明一實施例之封裝結構的元件佈局圖。
第35圖為依據本發明一實施例之封裝結構的元件剖面圖。
第36圖為一剖面圖，用以說明本發明一實施例之堆疊式封裝層疊結構(package-on-package,PoP)。
第37圖為一剖面圖，用以說明本發明一實施例之封裝結構，其包括球狀釘栓(stud bulb)之高度高於晶粒之頂表面。
第38圖為一剖面圖，用以說明本發明一實施例之封裝結構，其包括球狀釘栓(stud bulb)的堆疊結構高度高於晶粒之頂表面。
第39圖為一剖面圖，用以說明本發明一實施例之封裝結構，其包括具有延伸尾狀物之球狀釘栓(stud bulb)的高度高於晶粒之頂表面。
第40圖為一剖面圖，用以說明本發明一實施例之封裝結構，其包括球狀釘栓(stud bulb)的高度不高於晶粒之頂表面。
10‧‧‧基板
12‧‧‧墊片
16‧‧‧墊片保護層
18‧‧‧球狀釘栓(stud bulb)
20‧‧‧球狀釘栓保護塗層
22‧‧‧第二基板
24‧‧‧墊片
28‧‧‧已回焊之焊料連接結構(reflowed solder connector)
30‧‧‧模造化合物(molding compound)

Claims (9)

  1. 一種封裝結構，包括：一第一基板；複數個球狀釘栓(stud bulb)耦合到該第一基板之第一表面；一晶粒黏著至該第一基板之第一表面；一第二基板；複數個電性連接結構耦合到該第二基板，每一個電性連接結構分別耦合到對應的球狀釘栓(stud bulb)；以及複數個球狀釘栓保護塗層分別位於各自的球狀釘栓(stud bulb)之上，各自的球狀釘栓保護塗層位於其所對應的球狀釘栓(stud bulb)與電性連接結構之間。
  2. 如申請專利範圍第1項所述之封裝結構，其中該第一基板包括複數個墊片，每一個墊片保護層分別對應於每一個墊片之上，每一個球狀釘栓(stud bulb)分別接合到對應的墊片保護層。
  3. 如申請專利範圍第1項所述之封裝結構，其中該第一基板包括複數個墊片，各自的墊片包括對應的已處理之表面(treated surface)，各自的球狀釘栓(stud bulb)分別接合到對應的已處理之表面。
  4. 如申請專利範圍第1項所述之封裝結構，其中該第一基板包括複數個墊片，各自的球狀釘栓(stud bulb)分別直接接合到對應的墊片。
  5. 如申請專利範圍第1項所述之封裝結構，其中該各自的球狀釘栓(stud bulb)包括(1)單一球狀釘栓(stud bulb)； (2)具有延伸尾狀物之單一球狀釘栓(stud bulb)；(3)至少兩個單一球狀釘栓(stud bulb)的堆疊結構；(4)具有延伸尾狀物之一第一單一球狀釘栓(stud bulb)堆疊於一第二單一球狀釘栓(stud bulb)之上；或(5)上述之組合。
  6. 如申請專利範圍第1項所述之封裝結構，其中該各自的墊片與其對應的電性連接結構形成一部份連接(partial joint)。
  7. 如申請專利範圍第1項所述之封裝結構，尚包括：一介金屬化合物介於彼此對應的電性連接結構與球狀釘栓(stud bulb)之間。
  8. 一種封裝結構，包括：一第一接合墊位於一第一基板的一第一表面上；一晶粒附著到該第一基板的第一表面；一第二接合墊位於一第二基板的一第二表面上，其中該第一表面相對於該第二表面，該晶粒設置於該第一表面與該第二表面之間；一球狀釘栓(stud bulb)位於該第一接合墊之上；焊料機械性地耦合該球狀釘栓(stud bulb)到該第二接合墊；以及一球狀釘栓保護塗層位於該球狀釘栓(stud bulb)之上，其中該球狀釘栓保護塗層位於該球狀釘栓(stud bulb)與該焊料之間。
  9. 如申請專利範圍第8項所述之封裝結構，其中該球狀釘栓(stud bulb)包括(1)一單一球狀釘栓(stud bulb)；(2)具有一延伸尾狀物之一單一球狀釘栓(stud bulb)；(3)至少兩 個單一球狀釘栓(stud bulb)的堆疊結構；(4)具有延伸尾狀物之一第一單一球狀釘栓(stud bulb)堆疊於一第二單一球狀釘栓(stud bulb)之上；或(5)上述之組合。
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TW201118965A (en) * 2009-11-18 2011-06-01 Advanced Semiconductor Eng Manufacturing method of stackable semiconductor device packages

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* Cited by examiner, † Cited by third party
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CN102773749A (zh) * 2012-08-28 2012-11-14 昆山北钜机械有限公司 链式刀库

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