TWI469384B - Light emitting device - Google Patents

Description

Illuminating device

This invention relates to a lighting device and, more particularly, to a lighting device for applying an energy field.

Unlike a fluorescent lamp or an incandescent lamp that generally emits light by generating heat, a semiconductor light-emitting device such as a light-emitting diode (LED) emits light by utilizing the characteristics of a semiconductor, and the light emitted by such a light-emitting device is called cold. Cold luminescence. Such light-emitting devices have the advantages of long life, light weight, and low power consumption, making them useful in a variety of fields such as optical displays, traffic lights, data storage devices, communication devices, lighting devices, and medical devices. Therefore, how to improve the luminous efficiency of the light-emitting device is an important issue in this field.

1 is a cross-sectional view of a conventional light emitting device. Referring to FIG. 1, a light emitting device 100 is a vertical light emitting diode (LED) including electrodes 110 and 120, a first doped layer 130, a second doped layer 140, and a semiconductor light emitting layer 150. As the distance from the electrodes 110 and 120 increases, the distribution of current density gradually decreases. As shown in FIG. 1, a dense line indicates a high current density, and a region having a maximum of lines is located between the electrodes 110 and 120. However, due to inherent defects, the region with the highest luminous efficiency is blocked by the electrode 110, so that the total luminous efficiency of the light-emitting device 100 is affected.

2 is a top plan view of a conventional light emitting device. Referring to FIG. 2, illumination device 200 is a horizontal LED that includes electrodes 210 and 220. Since the current is always transmitted through the path of the lowest resistance, the distribution of current density between the electrodes 210 and 220 is not uniform. Among them, the main distribution of current density is along the central path between the electrodes 210 and 220. Therefore, in order to increase the amount of light emitted by the light-emitting device 200, it is necessary to increase the area of the uniform current distribution, which will increase the size of the light-emitting device 200.

Based on the foregoing description, it can be inferred that the luminous efficiency of the illuminating device may be affected by the following factors: 1. The region between the electrodes of the illuminating device is not only the region with the highest current carrier density, but also the region with the most photon generation. . However, most of the photons generated between the electrodes are blocked by the opaque electrodes, and it is difficult to improve the luminous efficiency.

2. The current is always transmitted via the path with the lowest resistance, which will result in uneven brightness of the illumination device, thereby limiting the luminous efficiency and size of the illumination device.

In view of this, the present invention provides a light emitting device that couples a magnetic material to a light emitting wafer to apply a magnetic field on the light emitting wafer, thereby increasing the brightness of the light emitting device.

The present invention provides a light emitting device comprising at least one light emitting wafer and a magnetic material coupled to the light emitting wafer to apply a magnetic field on the light emitting wafer.

In an embodiment of the invention, the above-mentioned light-emitting wafer comprises a substrate, a light-emitting stacked layer and a plurality of electrodes, wherein the substrate is coupled to the magnetic material, the light-emitting stacked layer is disposed on the substrate, and the electrode is electrically coupled to the light-emitting stack layer on.

In an embodiment of the invention, the light emitting stacked layer includes a first doped layer, a second doped layer and an active layer, wherein the second doped layer is disposed on the substrate and below the first doped layer The active layer is disposed between the first doped layer and the second doped layer. The first doped layer and the second doped layer include a P doped layer and an N doped layer.

In one embodiment of the present invention, the electrode includes a first electrode and a second electrode, wherein the first electrode is disposed on the first doped layer and electrically coupled to the first doped layer, and the second electrode Then, it is disposed under the second doped layer and electrically coupled to the second doped layer.

In an embodiment of the invention, the light-emitting stack layer further includes a transparent conductive layer (TCL), which is above the first doped layer.

In one embodiment of the present invention, the light emitting stacked layer further includes a blocking layer disposed between the first electrode and the first doping layer to block the first electrode and the first doping layer. Part of an electrical connection.

In an embodiment of the invention, the light emitting stacked layer further includes an isolation layer disposed between the second doped layer and the magnetic material for isolating the second electrode from the region under the first electrode.

In an embodiment of the present invention, the upper surface or the lower surface of the first doped layer, the second doped layer, the first electrode, the second electrode, the substrate or the magnetic material further includes a rough concave-convex pattern, A circular pattern or a photonic crystal layer.

In an embodiment of the invention, the light emitting stacked layer further includes a mirror layer disposed between the second doped layer and the substrate, between the substrate and the second electrode, or between the second electrode and the magnetic material, and Used to reflect light emitted from the active layer.

In one embodiment of the present invention, the electrode includes a first electrode and a second electrode, wherein the first electrode is disposed on the first doped layer and electrically coupled to the first doped layer, and the second electrode Then, it is disposed on the surface of the second doped layer that is not covered by the active layer and is electrically coupled to the second doped layer. The first doped layer and the second doped layer comprise a P doped layer or an N doped layer.

In an embodiment of the invention, the light-emitting chip comprises a light-emitting stack layer, a substrate and a plurality of electrodes, wherein the light-emitting stack layer is coupled to the magnetic material, the substrate is disposed on the light-emitting stack layer, and the electrodes are electrically coupled Connect to the luminescent stack.

In one embodiment of the present invention, the illuminating wafer includes a luminescent stacked layer and a plurality of electrodes, wherein the luminescent stacked layer is disposed on the magnetic material, and the electrode is electrically coupled to the luminescent stacked layer.

In one embodiment of the present invention, the above-mentioned light-emitting chip includes a light-emitting stacked layer and a plurality of electrodes, wherein the light-emitting stacked layer is disposed under the magnetic material, and the electrode is electrically coupled to the light-emitting stacked layer.

In one embodiment of the invention, the luminescent stack layer described above is fabricated in the form of a Transitive Inverted Pyramid (TTP).

In one embodiment of the invention, the magnetic material has a concave surface for providing a light-emitting wafer, and the concave mask has a reflective surface for reflecting light emitted by the light-emitting chip.

In one embodiment of the invention, the magnetic material is used to apply a magnetic field on the luminescent wafer to change the distribution of current density of the luminescent wafer, thereby increasing the brightness of the luminescent wafer.

The present invention provides a light emitting device including a light emitting stacked layer, a magnetic material, a first electrode, and a second electrode. Wherein, the light emitting stacked layer comprises a first surface and a second surface. A magnetic material is coupled to the second surface of the light stacking layer to apply a magnetic field on the light emitting stack layer. The first electrode is electrically coupled to the first surface of the light emitting stack layer, and the second electrode is coupled to the magnetic material.

In an embodiment of the invention, the light emitting device further includes a substrate disposed between the light emitting stacked layer and the magnetic material.

The above described features and advantages of the present invention will be more apparent from the following description.

If a current flows through the conductor in the magnetic field, the magnetic field applies a lateral force to the moving charge carrier, which pushes the charge carrier to one side of the conductor. This phenomenon is most pronounced on thin flat conductors. The charge accumulated on the sides of the conductor will balance this magnetic effect and produce a measurable voltage between the two sides of the conductor. The existence of such a measurable lateral voltage is called the Hall effect.

The present invention utilizes the Hall effect to introduce an energy field onto an optoelectronic semiconductor device. This externally added energy will change the direction and path of current flow between the electrode and the semiconductor device, thereby increasing the luminous efficiency and uniformity of the illumination device. Embodiments for describing the specific structure and current path of such a lighting device are provided below.

3(a) and 3(b) are cross-sectional views of a light emitting device according to an embodiment of the invention. Referring to FIG. 3(a), the light emitting device 300 is a vertical LED including electrodes 310 and 320, a first doped layer 330, a second doped layer 340, and a semiconductor light emitting layer 350. The first doped layer 330 and the second doped layer 340 may be a P doped layer and an N doped layer. The illumination device 300 is covered by a magnetic field 360 that is generated by a magnetic source and directed inwardly into a cross section of the illumination device 300. The Lorenz’s force, which is induced by the magnetic field, pushes the electrons and shifts the current to the left. As shown in Fig. 3(a), the main distribution of current density (indicated by current lines) is shifted from the region between the electrodes 310 and 320 to the region below the light-out plane, which indicates luminous efficiency. The highest region is no longer blocked by the electrode 310 and can substantially increase the overall luminous efficiency of the illumination device 300. The light exit plane described above or below is defined as the surface of the first doped layer 330 that is not covered by the electrodes. It should be emphasized here that as long as the component of the magnetic field is perpendicular to the flow direction of the current inside the light-emitting device 300, electric power is induced to cause the current to drift, and the luminous efficiency can be improved.

Referring to FIG. 3(b), the light exit surface of the light emitting device 300 is enlarged and a plurality of electrodes 310, 370, and 380 are disposed thereon. As shown in FIG. 3(b), the distribution of current density (represented by current lines) between the electrode 320 and the electrodes 310, 370, and 380 is all moved from the region between the electrodes to the region below the light exiting surface, so that the light is emitted. The overall luminous efficiency of device 300 is substantially improved. Furthermore, the distribution of current density below the light exit plane between the two electrodes 310 and 370 and between the two electrodes 370 and 380 remains unchanged. Therefore, the light-emitting device 300 of the present invention can provide higher brightness without affecting the uniformity of light.

In another embodiment, FIG. 4 is a top plan view of a light emitting device according to another embodiment of the present invention. Referring to FIG. 4, illumination device 400 is a horizontal LED that includes electrodes 410 and 420. Similar to the previous embodiment, when the magnetic force pushes electrons out of the path between the electrodes 410 and 420, the current density distribution will shift to the left portion of the light emitting device 400. As shown in Figure 4, the current path extends to a larger area (left area) which forms a more uniform current density distribution.

As for the diffusion capability of the drift current, the relevant principle is derived hereinafter to illustrate how the external magnetic field affects the current density.

In physics, Lorentz force refers to the force exerted on a charged particle in an electromagnetic field. The particles will be subjected to the electric field qE and the magnetic field q . × The force formed. The force F induced by the magnetic field B can be calculated by the following Lorentz force equation:

Where F is the Lorentz force, E is the electric field, B is the magnetic field, q is the particle charge, v is the instantaneous velocity of the electron, and × is the sign of the outer product. The electron system accelerates in the same linear direction as the electric field E , but according to the right hand rule, it will bend in a direction perpendicular to the instantaneous velocity vector v and the magnetic field B.

In an electrostatic field, the time derivative is zero, so the drift speed is as follows: Where m is the effective mass of the electron.

Based on the foregoing equation, it can be inferred that electrons drift in the spiral path at an angular velocity w _c = eB/mc along the axial direction of the static magnetic field B. For example, in order to extend the drift current to the negative x- axis direction, it is necessary to increase the component of the magnetic field on the z-axis ( B _z ) and reduce the component of the magnetic field on the y- axis ( B _y ). Further, when the speed of the external current in the y- axis direction is increased, the speed of the current in the x- axis direction is also increased, thereby improving the uniformity of the current. It should be emphasized here that as long as the component of the magnetic field is perpendicular to the flow direction of the internal current of the LED, the electromagnetic force is induced to cause the current to drift, thereby improving the luminous efficiency. The same concept can be applied to other light-emitting devices, such as, but not limited to, Laser Diode (LD).

In the case where an external magnetic field is applied to the light-emitting device, not only the current path is changed, but also the uniformity of the carrier density in the semiconductor is changed. Therefore, even in the case where the amount of the injection current remains unchanged, the light-emitting device has higher photoelectron conversion efficiency.

It should be noted that the intensity of the external magnetic field applied to the illuminating device of the present invention is greater than 0.01 Tesla, and may be a fixed value, a time-varying value, or a gradient-changing value (gradient). -varying value), but not limited to these cases. Further, the angle between the direction of the magnetic field and the direction of the light emission is 0 to 360 degrees. Furthermore, the magnetic field is provided by a magnet, a magnetic film, an electromagnet or any other type of magnetic material, and the number of magnetic sources may exceed one.

Based on the foregoing conclusions, in practical applications, the light-emitting device can be combined with magnetic materials in various ways, such as by epoxy, metal bonding, wafer bonding, epitaxial embedding (epitaxy). Embeding) and coating. Furthermore, the magnetic material may be coupled to the illumination device itself and may be fabricated as a substrate, a submount, an electromagnet, a slug, a holder or a magnetic heat sink, or as a magnetic film or The magnetic block is provided to provide a magnetic field as a light emitting device. The magnetic material may be a ferromagnetic material such as Rb, Ru, Nd, Fe, Pg, Co, Ni, Mn, Cr, Cu, Cr ₂ , Pt, Sm, Sb, Pt or alloys thereof. The magnetic material may also be a ceramic material such as an oxide of Mn, Fe, Co, Cu and V, a fluoride of Cr ₂ O ₃ , CrS, MnS, MnSe, MnTe, Mn, Fe, Co or Ni, V, Cr, Chloride of Fe, Co, Ni and Cu, bromide of Cu, CrSb, MnAs, MnBi, α-Mn, MnCl ₂ . 4H ₂ O, MnBr ₂ . 4H ₂ O, CuCl ₂ . 2H ₂ O, Co(NH ₄ )x(SO ₄ )xCl ₂ . 6H ₂ O, FeCo ₃ and FeCo ₃ . 2MgCO ₃ . The light emitting device may be an organic LED (OLED), an inorganic LED, a vertical LED, a horizontal LED, a thin film LED, or a flip chip LED. Hereinafter, the light-emitting device of the foregoing structure will be separately described.

Regarding a standard LED having a vertical structure, FIG. 5 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention. Referring to FIG. 5, the light emitting device 500a of the present invention is a vertical LED including a light emitting wafer 510 and a magnetic base 520. The light-emitting wafer 510 is disposed on the magnetic base 520 by a process such as epoxy resin, metal bonding, wafer bonding, epitaxial insertion or coating.

The light emitting wafer 510 includes (from top to bottom) a first electrode 511, a first doping layer 512, an active layer 513, a second doping layer 514, a substrate 515, and a second electrode 516. The first doped layer 512 , the active layer 513 , and the second doped layer 514 form a light emitting stacked layer disposed on the substrate 515 . The first electrode 511 is disposed on the first doped layer 512 and electrically coupled to the first doped layer 512 . The second electrode 516 is disposed under the substrate 515 and electrically coupled to the second doped layer 514 to form a vertical LED structure. The active layer 513 is disposed between the first electrode 511 and the second electrode 516 and is capable of generating light when a current passes. It should be noted that the material of the substrate 515 may be Si, SiC, GaN, GaP, GaAs, sapphire, ZnO or AlN, and the material of the light-emitting stacked layer may be an inorganic semiconductor material (such as GaAS, InP, GaN, GaP, AlP, AlAs). , InAs, GaSb, InSb, CdS, CdSe, ZnS or ZnSe) or an organic semiconductor material such as a polymer.

The magnetic field induced by the magnetic base 520 is applied to the light-emitting wafer 510 such that the main distribution of current density in the light-emitting wafer 510 is moved from the area between the first electrode 511 and the second electrode 516 to the area below the light exit plane. Thereby increasing the uniformity of the current and increasing the total brightness of the light-emitting device 500a.

In an embodiment of the invention, a transparent conductive layer (TCL) and a blocking layer are further disposed in the light emitting device to improve the brightness of the light emitting device. FIG. 6 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention. Referring to FIG. 6, in the light-emitting device 500b of the present embodiment, as described in the previous embodiment, a transparent conductive layer 530 is further disposed between the first electrode 511 and the first doping layer 512 to improve current collecting. The transparent conductive layer 530 is a thin film which is electrically conductive, transparent, and is formed of materials such as Indium Tin Oxides (ITO), NiAu, and AlZnO.

In addition, a blocking layer 540 is further disposed between the first electrode 511 and the first doping layer 512 to block a portion of the electrical connection between the first electrode layer 511 and the first doping layer 512. Therefore, the blocking layer 540 blocks most of the current path below the first electrode 511, and leaves only a small gap for current to flow, so that the main distribution of current density moves from the area below the first electrode 511 to the light exiting plane. The area below, thereby increasing the brightness of the light-emitting device 500b.

In an embodiment of the invention, an isolation layer is further provided in the illumination device to increase the brightness of the illumination device. FIG. 7 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention. Referring to FIG. 7, in the light-emitting device 500c of the present embodiment, as described in the previous embodiment, an isolation layer 550 is further disposed between the substrate 515 and the magnetic base 520. Similar to the function of the blocking layer 540, the isolation layer 550 can block most of the current path below the first electrode 511, while forcing the main distribution of current density to move from the region below the first electrode 511 to the region below the light exit plane. Thereby the brightness of the light-emitting device 500c is increased.

In an embodiment of the invention, the illumination device is further provided with a mirror layer to increase the brightness of the illumination device. FIG. 8 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention. Referring to FIG. 8, in the light-emitting device 500d of the present embodiment, a mirror layer 560 is further disposed between the substrate 515 and the second electrode 516 for reflecting light emitted from the active layer 513 to increase the brightness of the light-emitting device. It should be noted that in other embodiments, the mirror layer 560 may be disposed between the second doped layer 514 and the substrate 515 or between the second electrode 516 and the magnetic base 520 for reflecting light. But it is not limited to these situations.

In one embodiment of the invention, a rough pattern, a trapezoidal pattern, a circular pattern, or a photonic crystal layer may also be fabricated to increase the brightness of the illumination device. 9(a) to 9(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention. Referring to FIG. 9(a), in the light-emitting device 500e of the present embodiment, a rough pattern 570 is formed on the surface of the first doping layer 512, thereby increasing the surface reflectance of the first doping layer 512. Further, a rough pattern may be formed on the upper surface of the substrate 515 (or on the lower surface of the second doped layer 514), thereby increasing the surface reflectance of the substrate 515 (rough pattern 580 as shown in FIG. 9(b)) Or, a rough pattern is formed on the upper surface of the second electrode 516 (or on the surface of the substrate 515), thereby increasing the surface reflectance of the second electrode 516 (the roughness pattern 590 as shown in FIG. 9(c)). It should be noted that the rough pattern, the trapezoidal pattern, the circular pattern or the photonic crystal layer as described above may be formed on the first doping layer 512, the second doping layer 514, the first electrode 511, the second electrode 516, and the substrate 515. On, but not limited to, one or more of the upper and lower surfaces of the magnetic abutment 520 or a combination thereof.

Regarding a standard LED having a horizontal structure, FIG. 10 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the present invention. Referring to FIG. 10, the light emitting device 600a of the present embodiment is a horizontal LED including a light emitting chip 610 and a magnetic base 620. The luminescent wafer 610 is disposed on the magnetic submount 620 by epoxy, metal bonding, wafer bonding, epitaxial embedding, or coating processes.

The luminescent wafer 610 includes (from top to bottom) a first electrode 611, a first doped layer 612, an active layer 613, a second doped layer 614, and a substrate 615. The first doped layer 612 , the active layer 613 , and the second doped layer 614 form a light emitting stacked layer disposed on the substrate 615 . The first electrode 611 is disposed on the first doped layer 612 and electrically coupled to the first doped layer 612, and the second electrode 616 is disposed on the surface of the second doped layer 614 that is not covered by the active layer 614. And electrically coupled to the second doped layer 614 to form a vertical LED structure. The active layer 613 is disposed between the first electrode 611 and the second electrode 616 and is capable of generating light when a current passes.

The magnetic field induced by the magnetic base 620 is applied to the light-emitting wafer 610 such that the main distribution of current density in the light-emitting wafer 610 can be moved from the area under the first electrode 611 to the area below the light exit plane, thereby improving current uniformity. And increase the total brightness of the illuminating device 600a.

In an embodiment of the invention, the light-emitting device is further provided with a transparent conductive layer and a blocking layer, thereby improving the brightness of the light-emitting device. FIG. 11 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention. Referring to FIG. 11, in the light-emitting device 600b of the present embodiment, as described in the previous embodiment, a transparent conductive layer 630 is further disposed above the first doped layer 612 to improve current collecting. In addition, a blocking layer 640 is further disposed between the first electrode 611 and the first doping layer 612, thereby blocking a portion of the electrical connection between the first electrode 611 and the first doping layer 612. Therefore, the blocking layer 640 can block most of the current path under the first electrode 611, leaving only a small gap for current to flow, which will cause the main distribution of current density to be moved from the area under the first electrode 611 to Light exits the area below the surface, thereby increasing the brightness of the illumination device 600b.

In an embodiment of the invention, an isolation layer is further provided in the illumination device to increase the brightness of the illumination device. FIG. 12 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention. Referring to FIG. 12, in the light-emitting device 600c of the present embodiment, as described in the previous embodiment, an isolation layer 650 is further disposed between the second doped layer 614 and the substrate 615. Similar to the function of the blocking layer 640, the isolation layer 650 can block most of the current path between the second doping layer 614 and the substrate 615, so that the main distribution of current density shifts to the area below the light exiting plane, thereby increasing illumination. The brightness of device 600c.

In an embodiment of the invention, the illumination device is further provided with a mirror layer to increase the brightness of the illumination device. FIG. 13 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention. Referring to Fig. 13, in the light-emitting device 600d of the present embodiment, a mirror layer 660 is further disposed between the substrate 615 and the magnetic base 620 for reflecting light emitted from the active layer 613 to increase the brightness of the light-emitting device 600d. It should be noted that in other embodiments, the mirror layer 660 may also be disposed between the second doped layer 614 and the substrate 615 for reflecting light, but is not limited to these cases.

In an embodiment of the invention, the method further comprises forming a rough pattern, a trapezoidal pattern, a circular pattern or a photonic crystal layer, thereby improving the brightness of the light emitting device. 14(a) to 14(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention. Referring to FIG. 14(a), in the light-emitting device 600e of the present embodiment, the upper surface of the first doped layer 612 includes a rough pattern 670 formed to increase the surface reflectance of the first doped layer 612. Further, a rough pattern may be formed on the upper surface of the substrate 615 (or on the lower surface of the second doped layer 614), thereby increasing the surface reflectance of the substrate 615 (the roughness pattern 680 as shown in FIG. 14(b)), Or a rough pattern is formed on the upper surface of the magnetic base 620 (or the lower surface of the substrate 615), thereby increasing the surface reflectance of the magnetic base 620 (the rough pattern 690 as shown in Fig. 14(c)). It should be noted that, as described above, a rough pattern, a trapezoidal pattern, a circular pattern, or a photonic crystal layer may be fabricated on the first doped layer 612, the second doped layer 614, the first electrode 611, the substrate 615, One or more of the upper and lower surfaces of the magnetic abutment 620 or a combination thereof, but is not limited to these cases.

With respect to a flip chip LED having a vertical structure, FIG. 15 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the present invention. Referring to FIG. 15, the light-emitting device 700a of the present embodiment is a vertical LED including a light-emitting chip 710 and a magnetic base 720. The luminescent wafer 710 is disposed on the magnetic submount 720 by epoxy, metal bonding, wafer bonding, epitaxial embedding, or coating processes.

The luminescent wafer 710 includes (from top to bottom) a first electrode 711, a substrate 712, a first doped layer 713, an active layer 714, a second doped layer 715, and a second electrode 716. The first doped layer 713 , the active layer 714 , and the second doped layer 715 form a light emitting stacked layer disposed under the substrate 712 . The first electrode 711 is disposed on the first doped layer 713 and electrically coupled to the first doped layer 713, and the second electrode 716 is disposed under the second doped layer 715 and electrically coupled to The second doped layer 715 is over to form a vertical LED structure. The active layer 714 is disposed between the first electrode 711 and the second electrode 716, and is capable of generating light when a current passes.

The magnetic field induced by the magnetic base 720 is applied to the light-emitting wafer 710 such that the main distribution of current density in the light-emitting wafer 710 can be moved from the area between the first electrode 711 and the second electrode 715 to below the light exit plane. The area, thereby increasing the uniformity of the current and increasing the total brightness of the light-emitting device 700a.

In an embodiment of the invention, the light-emitting device is further provided with a transparent conductive layer (TCL) and a blocking layer, thereby improving the brightness of the light-emitting device. Figure 16 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention. Referring to Fig. 16, in the light-emitting device 700b of the present embodiment, as described in the previous embodiment, a transparent conductive layer 730 is further disposed above the substrate 712 to enhance current collecting. In addition, a blocking layer 740 is further disposed between the first electrode 711 and the substrate 712 to block a portion of the electrical connection between the first electrode 711 and the substrate 712. Therefore, the blocking layer 740 can block most of the current path below the first electrode 711, leaving only a small gap for current to flow out, so that the main distribution of current density is moved from the area under the first electrode 711 to Light exits the area below the surface, thereby increasing the brightness of the illumination device 700b.

In an embodiment of the invention, an isolation layer is further provided in the illumination device to increase the brightness of the illumination device. Figure 17 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention. Referring to FIG. 17, in the light-emitting device 700c of the present embodiment, as described in the previous embodiment, an isolation layer 750 is further disposed between the second doping layer 715 and the magnetic substrate 720. Similar to the function of the blocking layer 740, the isolation layer 750 can block most of the current path below the first electrode 711 and cause the main distribution of current density to move from the area under the first electrode 711 to the area below the light exit plane, Thereby the brightness of the light-emitting device 700c is increased.

In one embodiment of the invention, a mirror layer is also provided in the illumination device to increase the brightness of the illumination device. FIG. 18 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention. Referring to FIG. 18, in the light-emitting device 700d of the present embodiment, a mirror layer 760 is further disposed between the second doping layer 715 and the second electrode 516, and can be used to reflect the light emitted from the active layer 714 to increase the light-emitting device. 700d brightness. It should be noted that in other embodiments, the mirror layer 760 may also be disposed between the second electrode 716 and the magnetic base 720 for reflecting light, but is not limited thereto.

In an embodiment of the invention, the method further comprises forming a rough pattern, a trapezoidal pattern, a circular pattern or a photonic crystal layer, thereby improving the brightness of the light emitting device. 19(a) to 19(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention. Referring to FIG. 19(a), in the light-emitting device 700e of the present embodiment, the upper surface of the substrate 712 is formed with a rough pattern 770, thereby increasing the surface reflectance of the first doped layer 712. Further, a rough pattern may be formed on the upper surface of the first doping layer 713 (or on the lower surface of the substrate 712), thereby increasing the surface reflectance of the first doping layer 713 (rough as shown in FIG. 19(b)) The pattern 780), or a rough pattern is formed on the upper surface of the second electrode 716 (or the lower surface of the second doping layer 715), thereby increasing the surface reflectance of the second electrode 716 (as shown in FIG. 19(c) Rough pattern 790). It should be noted that, as described above, a rough pattern, a trapezoidal pattern, a circular pattern, or a photonic crystal layer may be fabricated on the substrate 712, the first doped layer 713, the second doped layer 715, the first electrode 711, One or more of the upper and lower surfaces of the second electrode 716, the magnetic base 720, or a combination thereof, but are not limited to these cases.

FIG. 20 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention. Referring to FIG. 20, the light emitting device 800a of the present embodiment is a horizontal LED including a light emitting chip 810 and a magnetic base 820. The luminescent wafer 810 is disposed on the magnetic submount 820 by epoxy, metal bonding, wafer bonding, epitaxial embedding, or coating processes.

The light emitting wafer 810 includes (from top to bottom) a first electrode 811, a substrate 812, a first doped layer 813, an active layer 814, and a second doped layer 815. The first doped layer 813 , the active layer 814 , and the second doped layer 815 form a light emitting stacked layer disposed under the substrate 812 . The first electrode 811 is disposed on the substrate 812 and electrically coupled to the first doped layer 813, and the second electrode 816 is disposed on the surface of the second doped layer 815 not covered by the active layer 814. The second doped layer 815 is coupled to form a horizontal LED structure. The active layer 814 is disposed between the first electrode 811 and the second electrode 816 and is capable of generating light when a current passes.

The magnetic field induced by the magnetic base 820 is applied to the light-emitting wafer 810 such that the main distribution of current density in the light-emitting wafer 810 can be moved from the area under the first electrode 811 to the area below the light exit plane, thereby increasing the current. Uniformity and increase the overall brightness of the illumination device 800a.

In an embodiment of the invention, the light-emitting device is further provided with a transparent conductive layer and a blocking layer, thereby improving the brightness of the light-emitting device. Figure 21 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention. Referring to Fig. 21, in the light-emitting device 800b of the present embodiment, as described in the previous embodiment, a transparent conductive layer 830 is disposed above the substrate 812 to improve the current collecting effect. In addition, a blocking layer 840 is further disposed between the first electrode 811 and the substrate 812, thereby blocking a portion of the electrical connection between the first electrode 811 and the substrate 812. Therefore, the blocking layer 840 can block most of the current path below the first electrode 811, and leave only a small gap for current to flow out, so that the main distribution of current density moves from the area under the first electrode 811 to the light. The area below the surface is emerged, thereby increasing the brightness of the illumination device 800b.

In an embodiment of the invention, an isolation layer is further provided in the illumination device to increase the brightness of the illumination device. Figure 22 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention. Referring to FIG. 22, in the light-emitting device 800c of the present embodiment, as described in the previous embodiment, an isolation layer 850 is further disposed between the second doped layer 815 and the magnetic base 820. Similar to the function of the blocking layer 840, the isolation layer 850 can block most of the current path between the first electrode 811 and the magnetic base 820, so that the main distribution of current density shifts to the area below the light exit plane, thereby increasing The brightness of the light emitting device 800c.

In an embodiment of the invention, the illumination device is further provided with a mirror layer to increase the brightness of the illumination device. 23 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention. Referring to FIG. 23, in the light-emitting device 800d of the present embodiment, a mirror layer 860 is further disposed between the second doped layer 815 and the magnetic base 820 for reflecting light emitted from the active layer 814 to increase light emission. The brightness of device 800d.

In one embodiment of the present invention, a rough pattern, a trapezoidal pattern, a circular pattern, or a photonic crystal layer is also formed to improve the brightness of the light-emitting device. 24(a) to 24(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention. Referring to FIG. 24(a), in the light-emitting device 800e of the present embodiment, the upper surface of the substrate 812 is formed with a rough pattern 870 to increase the surface reflectance of the first doped layer 812. Further, a rough pattern may be formed on the upper surface of the first doped layer 813 (or on the lower surface of the substrate 812) to increase the surface reflectance of the first doped layer 813 (as shown in FIG. 24(b) The pattern 880), or a rough pattern is formed on the upper surface of the magnetic base 820 (or the lower surface of the second doped layer 815), thereby increasing the surface reflectance of the magnetic base 820 (as shown in FIG. 24(c) Rough pattern 890). It should be noted here that, as described above, a rough pattern, a trapezoidal pattern, a circular pattern, or a photonic crystal layer may be fabricated on the substrate 812, the first doped layer 813, the second doped layer 815, and the first electrode 811. On, but not limited to, one or more of the upper and lower surfaces of the magnetic abutment 820 or a combination thereof.

With respect to a thin film LED having a vertical structure, FIG. 25 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the present invention. Referring to FIG. 25, the light emitting device 900a of the present embodiment is a vertical LED including a light emitting chip 910 and a magnetic base 920. The light emitting wafer 910 is disposed on the magnetic substrate 920 by an epoxy resin, metal bonding, wafer bonding, epitaxial embedding, or coating process.

The light emitting wafer 910 includes (from top to bottom) a first electrode 911, a first doping layer 912, an active layer 913, a second doping layer 914, and a second electrode 915. Wherein, the first doping layer 912, the active layer 913 and the second doping layer 914 form a light emitting stacked layer. The first electrode 911 is disposed on the first doped layer 912 and electrically coupled to the first doped layer 912, and the second electrode 915 is disposed under the second doped layer 914 and electrically coupled to The second doped layer 914 is formed to form a vertical LED structure. The active layer 913 is disposed between the first electrode 911 and the second electrode 915, and is capable of generating light when a current passes.

The magnetic field induced by the magnetic substrate 920 is applied to the light emitting wafer 910 such that the main distribution of current density in the light emitting wafer 910 can be moved from the region between the first electrode 911 and the second electrode 915 to below the light exit plane. The area is to increase the uniformity of the current and increase the total brightness of the light-emitting device 900a.

In an embodiment of the invention, the light-emitting device is further provided with a transparent conductive layer (TCL) and a blocking layer, thereby improving the brightness of the light-emitting device. FIG. 26 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention. Referring to FIG. 26, in the light-emitting device 900b of the present embodiment, as described in the previous embodiment, a transparent conductive layer 930 may be disposed above the first doped layer 912 to improve current collecting. In addition, a blocking layer 940 may be disposed between the first electrode 911 and the first doping layer 912 to block a portion of the electrical connection between the first electrode 911 and the first doping layer 912. Therefore, the blocking layer 940 can block most of the current path below the first electrode 911, leaving only a small gap for current to flow out, so that the main distribution of current density is moved from the area under the first electrode 911 to Light exits the area below the surface, thereby increasing the brightness of the illumination device 900b.

In an embodiment of the invention, an isolation layer is further provided in the illumination device to increase the brightness of the illumination device. Figure 27 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention. Referring to FIG. 27, in the light-emitting device 900c of the present embodiment, as described in the previous embodiment, an isolation layer 950 is further disposed between the second doping layer 914 and the magnetic base 920. Similar to the function of the blocking layer 940, the isolation layer 950 can block most of the current path below the first electrode 911, and the main distribution of current density can be moved from the area under the first electrode 911 to the area below the light exit plane. Thereby increasing the brightness of the light-emitting device 900c.

In an embodiment of the invention, the illumination device is further provided with a mirror layer to increase the brightness of the illumination device. 28 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention. Referring to FIG. 28, in the light emitting device 900d of the present embodiment, a mirror layer 960 is further disposed between the second doping layer 914 and the second electrode 915 for reflecting light emitted from the active layer 913 to increase the light emitting device. 900d brightness. It should be noted that in other embodiments, the mirror layer 960 may also be disposed between the second electrode 915 and the magnetic base 920 for reflecting light, but is not limited to this case.

In an embodiment of the invention, the method further comprises forming a rough pattern, a trapezoidal pattern, a circular pattern or a photonic crystal layer, thereby improving the brightness of the light emitting device. 29(a) to 29(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention. Referring to FIG. 29(a), in the light-emitting device 900e of the present embodiment, the upper surface of the first doped layer 912 is formed with a rough pattern 970 to increase the surface reflectance of the first doped layer 912. Further, a rough pattern may be formed on the upper surface of the second electrode 915 (or on the lower surface of the second doping layer 914), thereby increasing the surface reflectance of the second electrode 915 (rough as shown in FIG. 29(b)) The pattern 980), or a rough pattern is formed on the upper surface of the magnetic base 920 (or the lower surface of the second doped layer 815), thereby increasing the surface reflectance of the magnetic base 920 (as shown in FIG. 29(c) Rough pattern 990). It should be noted here that, as described above, a rough pattern, a trapezoidal pattern, a circular pattern or a photonic crystal layer may be fabricated on the first doping layer 912, the second doping layer 914, the first electrode 911, and the second electrode. One or more of the upper and lower surfaces of 915, magnetic abutment 920, or a combination thereof, but are not limited to these situations.

FIG. 30 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention. Referring to FIG. 30, the light emitting device 1000a of the present embodiment is a horizontal LED including an illuminating wafer 1010 and a magnetic pedestal 1020. The luminescent wafer 1010 is disposed on the magnetic submount 1020 by epoxy, metal bonding, wafer bonding, epitaxial embedding, or coating processes.

The luminescent wafer 1010 includes (from top to bottom) a first electrode 1011, a first doped layer 1012, an active layer 1013, and a second doped layer 1014. The first doped layer 1012, the active layer 1013, and the second doped layer 1014 form a light emitting stacked layer. The first electrode 1011 is disposed on the first doped layer 1012 and electrically coupled to the first doped layer 1012, and the second electrode 1016 is disposed on the second doped layer 1014 without being covered by the active layer 1013. The surface is electrically coupled to the second doped layer 1014 to form a horizontal LED structure. The active layer 1013 is disposed between the first electrode 1011 and the second electrode 1016, and is capable of generating light when a current passes.

The magnetic field induced by the magnetic base 1020 is applied to the light-emitting wafer 1010, so that the main distribution of the current density in the light-emitting wafer 1010 is moved from the area under the electrode 1011 to the area below the light exit plane to improve the uniformity of the current. And increase the total brightness of the light-emitting device 1000a.

In an embodiment of the invention, the light-emitting device is further provided with a transparent conductive layer (TCL) and a blocking layer, thereby improving the brightness of the light-emitting device. Figure 31 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention. Referring to Fig. 31, in the light-emitting device 1000b of the present embodiment, as described in the previous embodiment, a transparent conductive layer 1030 is further disposed above the first doped layer 1012 to enhance current collecting. In addition, a blocking layer 1040 is further disposed between the first electrode 1011 and the first doped layer 1012, thereby blocking a portion of the electrical connection between the first electrode 1011 and the first doped layer 1012. Therefore, the blocking layer 1040 can block most of the current path below the first electrode 1011, leaving only a small gap for current to flow out, thereby allowing the main distribution of current density to be moved from the area under the first electrode 1011 to Light exits the area below the surface, thereby increasing the brightness of the illumination device 1000b.

In an embodiment of the invention, an isolation layer is further provided in the illumination device to increase the brightness of the illumination device. 32 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention. Referring to FIG. 32, in the light-emitting device 1000c of the present embodiment, as described in the previous embodiment, an isolation layer 1050 is further disposed between the second doped layer 1014 and the magnetic base 1020. Similar to the function of the blocking layer 1040, the isolation layer 1050 can block most of the current path between the first electrode 1011 and the magnetic base 1020, so that the main distribution of current density shifts to the area below the light exit plane, thereby increasing The brightness of the light emitting device 1000c.

In an embodiment of the invention, the illumination device is further provided with a mirror layer to increase the brightness of the illumination device. Figure 33 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the present invention. Referring to FIG. 33, in the light emitting device 1000d of the present embodiment, a mirror layer 1060 is further disposed between the second doped layer 1014 and the magnetic base 1020 for reflecting light emitted from the active layer 1013 to increase the light emitting device. 1000d brightness.

In one embodiment of the present invention, a rough pattern, a trapezoidal pattern, a circular pattern, or a photonic crystal layer is also formed to improve the brightness of the light-emitting device. 34(a) to 34(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention. Referring to FIG. 34(a), in the light-emitting device 1000e of the present embodiment, the upper surface of the first doped layer 1012 is formed with a rough pattern 1070 to increase the surface reflectance of the first doped layer 1012. Further, a rough pattern may be formed on the upper surface of the magnetic submount 1020 (or on the lower surface of the second doped layer 1014), thereby increasing the surface reflectance of the magnetic submount 1020 (as shown in FIG. 34(b)). Pattern 1080). It should be noted here that, as described above, a rough pattern, a trapezoidal pattern, a circular pattern or a photonic crystal layer may be fabricated on the first doped layer 1012, the second doped layer 1014, the first electrode 1011, and the magnetic abutment. One or more of the upper and lower surfaces of 1020 or a combination thereof, but are not limited to these situations.

FIG. 35 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention, with respect to an LED having a vertical structure in which an electrode is disposed under a magnetic substrate. Referring to FIG. 35, the light emitting device 1100a of the present embodiment is a vertical LED including (from top to bottom) a first electrode 1111, a first doped layer 1112, an active layer 1113, a second doped layer 1114, a substrate 1115, Magnetic base 1116 and second electrode 1117. The first doped layer 1112 , the active layer 1113 and the second doped layer 1114 form a light emitting stacked layer, which is disposed on the substrate 1115 . The first electrode 1111 is disposed on the first doped layer 1112 and electrically coupled to the first doped layer 1112, and the second electrode 1117 is disposed under the substrate 1115 and electrically coupled to the second doping. Layer 1114 is used to form a vertical LED structure. The active layer 1113 is disposed between the first electrode 1111 and the second electrode 1117, and is capable of generating light when a current passes.

The magnetic field induced by the magnetic base 1116 is applied to the light-emitting stack layer such that the main distribution of current density in the light-emitting stack layer can be moved from the area between the first electrode 1111 and the second electrode 1117 to below the light exit plane. The area is increased in order to increase the uniformity of the current and increase the total brightness of the light-emitting device 1100a.

In an embodiment of the invention, the light-emitting device is further provided with a transparent conductive layer and a blocking layer, thereby improving the brightness of the light-emitting device. Figure 36 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention. Referring to Fig. 36, in the light-emitting device 1100b of the present embodiment, as described in the previous embodiment, a transparent conductive layer 1130 is further disposed above the first doped layer 1112 to enhance current collecting. In addition, a blocking layer 1140 is further disposed between the first electrode 1111 and the first doping layer 1112, thereby blocking a portion of the electrical connection between the first electrode 1111 and the first doping layer 1112. Therefore, the blocking layer 1140 can block most of the current path below the first electrode 1111, leaving only a small gap for current to flow out, so that the main distribution of current density can be moved from the area under the first electrode 1111 to Light exits the area below the surface, thereby increasing the brightness of the illumination device 1100b.

In an embodiment of the present invention, an isolation layer is further disposed between the second doped layer 1114 and the substrate 1115, between the substrate 1115 and the magnetic submount 1116, or between the magnetic submount 1116 and the second electrode 1117. A mirror layer for reflecting light to increase the brightness of the illumination device. In addition, one or more upper and lower surfaces of the first doped layer 1112, the second doped layer 1114, the first electrode 1111, the second electrode 1117, the substrate 1115, the magnetic submount 1116, and combinations thereof may also be fabricated A rough pattern, a circular pattern or a photonic crystal layer is used to increase the brightness of the light-emitting device.

FIG. 37 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention, with respect to a thin film LED having a vertical structure disposed under a magnetic substrate. Referring to FIG. 37, the light emitting device 1200a of the present embodiment is a vertical LED including (from top to bottom) a first electrode 1211, a first doped layer 1212, an active layer 1213, a second doped layer 1214, and a magnetic abutment. 1215 and second electrode 1216. The first doped layer 1212, the active layer 1213, and the second doped layer 1214 form a light emitting stacked layer. The first electrode 1211 is disposed on the first doped layer 1212 and electrically coupled to the first doped layer 1112, and the second electrode 1216 is disposed under the second doped layer 1214 and electrically coupled to the first electrode 1212. The layers 1214 are doped to form a vertical LED structure. The active layer 1213 is disposed between the first electrode 1211 and the second electrode 1216 and is capable of generating light when a current passes.

The magnetic field induced by the magnetic base 1215 is applied to the light-emitting stack layer such that the main distribution of the current density in the light-emitting stack layer is moved from the area between the first electrode 1211 and the second electrode 1216 to the area below the light exit plane. Thereby increasing the uniformity of the current and increasing the total brightness of the light-emitting device 1200a.

In an embodiment of the invention, the light-emitting device is further provided with a transparent conductive layer and a blocking layer, thereby improving the brightness of the light-emitting device. FIG. 38 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention. Referring to Fig. 38, in the light-emitting device 1200b of the present embodiment, as described in the previous embodiment, a transparent conductive layer 1230 is further disposed above the first doped layer 1212 to enhance current collecting. In addition, a blocking layer 1240 is further disposed between the first electrode 1211 and the first doping layer 1212, thereby blocking a portion of the electrical connection between the first electrode 1211 and the first doping layer 1212. Therefore, the blocking layer 1240 can block most of the current path below the first electrode 1211, leaving only a small gap for current to flow, so that the main distribution of current density is shifted from the area under the first electrode 1211 to the light exiting. The area under the surface, thereby increasing the brightness of the light-emitting device 1200b.

In an embodiment of the invention, an isolation layer or a mirror layer for reflecting light is further disposed between the second doped layer 1214 and the magnetic submount 1215 to increase the brightness of the illumination device. In addition, a rough pattern may be formed on one or more of the upper surface and the lower surface of the first doped layer 1212, the second doped layer 1214, the first electrode 1211, the second electrode 1216, the magnetic submount 1215, and a combination thereof. A circular pattern or photonic crystal layer to increase the brightness of the illumination device.

39(a) to 39(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention, with respect to an LED having a vertical structure and having a magnetic material disposed thereon. Referring to FIG. 39(a), the light-emitting device 1300a of the present embodiment is a vertical LED including a light-emitting chip 1310 and a magnetic material 1320. The light emitting wafer 1310 includes (from top to bottom) a first electrode 1311, a first doped layer 1312, an active layer 1313, a second doped layer 1314, and a second electrode 1315. The first doped layer 1312, the active layer 1315, and the second doped layer 1314 form a light emitting stacked layer. The first electrode 1311 is disposed on the first doped layer 1312 and electrically coupled to the first doped layer 1312, and the second electrode 1315 is disposed under the second doped layer 1314 and electrically coupled to The second doped layer 1314 is formed to form a vertical LED structure. The active layer 1313 is disposed between the first electrode 1311 and the second electrode 1316, and is capable of generating light when a current passes.

The magnetic material 1320 is disposed on the first electrode 1311, and a magnetic field is applied on the light emitting wafer 1310 such that a main distribution of current density in the light emitting wafer 1310 is shifted from a region between the first electrode 1311 and the second electrode 1315 to light emission. The area below the plane to increase the uniformity of the current and increase the overall brightness of the illumination device 1300a.

In other embodiments, the magnetic material may be disposed on the light emitting stacked layer and cover the first electrode (such as the magnetic material 1330 shown in FIG. 39(b)) or on the surface of the light emitting stacked layer not covered by the first electrode. (Magnetic material 1340 as shown in Fig. 39 (c)).

40(a) to 40(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention, with respect to an LED having a horizontal structure and having a magnetic material disposed thereon. Referring to FIG. 40(a), the light-emitting device 1400a of the present embodiment is a horizontal LED including an illuminating wafer 1410 and a magnetic material 1420. The luminescent wafer 1410 includes (from top to bottom) a first electrode 1411, a first doped layer 1412, an active layer 1413, and a second doped layer 1414. The first doped layer 1412, the active layer 1413, and the second doped layer 1414 form a light emitting stacked layer. The first electrode 1411 is disposed on the first doped layer 1412 and electrically coupled to the first doped layer 1412, and the second electrode 1415 is disposed on the second doped layer 1414 without being covered by the active layer 1413. The surface is electrically coupled to the second doped layer 1414 to form a horizontal LED structure. The active layer 1413 is disposed between the first electrode 1411 and the second electrode 1415 and is capable of generating light when a current passes.

The magnetic material 1420 is disposed on the first electrode 1411, and a magnetic field is applied on the light emitting wafer 1410 such that a main distribution of current density in the light emitting wafer 1410 is shifted from a region between the first electrode 1411 and the second electrode 1415 to light emission. The area below the plane, thereby increasing the uniformity of the current and increasing the overall brightness of the illumination device 1400a.

In other embodiments, the magnetic material may be disposed on the light emitting stacked layer and cover the first electrode (such as the magnetic material 1430 shown in FIG. 40(b)) or on the surface of the light emitting stacked layer that is not covered by the first electrode. (Magnetic material 1440 as shown in Fig. 40 (c)). In still another embodiment, the magnetic material may be disposed on the second electrode (not shown), but is not limited to this case.

It should be noted here that in one embodiment, the aforementioned light-emitting stack layer can be fabricated in the form of a transitional pyramid (TIP) in order to increase the brightness of the light-emitting device. Figure 41 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention. Referring to FIG. 41, the light-emitting device 1500 of the present embodiment is a flip-chip LED having a vertical structure including a light-emitting chip 1510 and a magnetic material 1520. The light emitting wafer 1510 includes (from top to bottom) a first electrode 1511, a substrate 1512, a first doping layer 1513, an active layer 1514, a second doping layer 1515, and a second electrode 1516. The first doped layer 1513 , the active layer 1514 , and the second doped layer 1515 form a light emitting stacked layer 1530 .

As shown in FIG. 41, the light emitting stacked layer 1530 is fabricated in the form of a transitional inverted pyramid (TIP) in which the surface of the light emitting stacked layer 1530 is capable of reflecting light emitted from the active layer 1514 and directing the light to the light exit surface of the light emitting device 1500, The total brightness of the light-emitting device 1500 is increased.

As described above, the present invention provides various structures of a light-emitting wafer in which a magnetic material is disposed in order to increase the brightness of the light-emitting device. However, in another aspect, the magnetic material can be fabricated as a substrate, abutment, a magnetic film, an electromagnet, a metal block, a holder or a magnetic heat sink, and the magnetic material can be a ferromagnetic material such as Rb, Ru, Nd, Fe, Pg, Co, Ni, Mn, Cr, Cu, Cr ₂ , Pt, Sm, Sb, Pt or alloys thereof, and the surface magnetic force thereof is larger than 0.01 Tesla, and the shape thereof may be circular or polygonal. A number of embodiments are provided below to illustrate the configuration of a magnetic material and a plurality of light emitting wafers.

Figure 42 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention. Referring to FIG. 42, the magnetic material is fabricated as a base 1610, and the light-emitting wafers 1620 to 1650 are embedded in the base 1610.

In other embodiments, the magnetic material can be fabricated to have one or more concave surfaces for providing a light-emitting wafer. 43 and 44 are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the invention. Referring to FIG. 43, the magnetic material can be fabricated as a base 1710 having a plurality of concave surfaces, each of which is provided with one of the light-emitting wafers 1720 to 1750, and has a reflective surface for reflecting the emission of the corresponding light-emitting wafer. Light. Referring to Fig. 44, the magnetic material is fabricated as a base 1810 having only one concave surface, the concave surfaces being provided with light-emitting wafers 1820 to 1840, and also having a reflective surface for reflecting light emitted from the light-emitting wafers 1820 to 1840. Therefore, not only the action of the magnetic force but also the effect of the reflection can be used to increase the efficiency of the light-emitting device or increase the total brightness of the light-emitting device.

It should be noted here that in the case where an external energy field is applied to the light-emitting device, not only the current path changes, but also the uniformity of the carrier density in the semiconductor changes. Therefore, even in the case where the current injection amount remains unchanged, the light-emitting device can have a high photoelectron conversion efficiency.

Figure 45 is a graph showing the output power of light emitted by a light-emitting device having a magnetic substrate, in accordance with an embodiment of the invention. Wherein, the x coordinate refers to the current injected into the light emitting device, and the y coordinate refers to the output power of the light emitted by the light emitting device. Referring to Fig. 45, when a magnetic field of 0.15 T is applied to the light-emitting device, the photoelectron conversion efficiency is increased to 0.025 mW/mA, and the total output power of light is increased to 15%. On the other hand, when a magnetic field of 0.25 T was applied to the light-emitting device, the photoelectron conversion efficiency was increased by 0.04 mW/mA, and the total output power of the light was increased to 22.6%. As shown in Fig. 45, it is apparent that when the intensity of the external magnetic field is increased, the output power of the light is increased.

In summary, the magnetic field can be applied to the light-emitting device in the above manner to improve the luminous efficiency and increase the brightness of the light-emitting device. Therefore, the present invention has at least the following advantages: 1. As the ability to diffuse the drift current increases, the distance between the electrodes can be elongated to reduce the number of electrodes and reduce the size of the electrodes. Therefore, the light-emitting area can be increased in order to increase the luminous efficiency of the light-emitting device.

2. The amount of diffusion drift current can be increased such that the main distribution with the highest current density is moved from the region between the electrodes of the illumination device to the region under the light exit region, thereby increasing the uniformity of the current. Therefore, the region with the highest photoelectron conversion efficiency is no longer blocked by the electrodes, thereby improving the luminous efficiency of the light-emitting device.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100, 200, 300, 400, 500a, 500b, 500c, 500d, 500e, 600a, 600b, 600c, 600d, 600e, 700a, 700b, 700c, 700d, 700e, 800a, 800b, 800c, 800d, 800e, 900a, 900b, 900c, 900d, 900e, 1000a, 1000b, 1000c, 1000d, 1000e, 1100a, 1100b, 1200a, 1200b, 1300a, 1300b, 1300c, 1400a, 1400b, 1400c, 1500. . . Illuminating device

110, 120, 210, 220, 310, 320, 370, 380, 410, 420. . . electrode

130, 330. . . First doped layer

140, 340. . . Second doped layer

150, 350. . . Semiconductor light emitting layer

360. . . magnetic field

510, 610, 710, 810, 910, 1010, 1110, 1210, 1310, 1410, 1510, 1620, 1630, 1640, 1650, 1720, 1730, 1740, 1750, 1820, 1830, 1840. . . Light emitting chip

511, 611, 711, 811, 911, 1011, 1111, 1211, 1311, 1411, 1511. . . First electrode

512, 612, 713, 813, 912, 1012, 1112, 1212, 1312, 1412, 1513. . . First doped layer

513, 613, 714, 814, 913, 1013, 1113, 1213, 1313, 1413, 1514. . . Active layer

514, 614, 715, 815, 914, 1014, 1114, 1214, 1314, 1414, 1515. . . Second doped layer

515, 615, 712, 812, 1115, 1512. . . Base

516, 616, 716, 816, 915, 1016, 1117, 1216, 1315, 1415, 1516. . . Second electrode

520, 620, 720, 820, 920, 1020, 1116, 1215. . . Magnetic abutment

530, 630, 730, 830, 930, 1030. . . Transparent conductive layer

540, 640, 740, 840, 940, 1040. . . Blocking layer

550, 650, 750, 850, 950, 1050. . . Isolation layer

560, 660, 760, 860, 960, 1060. . . Mirror layer

570, 580, 590, 670, 680, 690, 770, 780, 790, 870, 880, 890, 970, 980, 990, 1070, 1080. . . Rough pattern

1320, 1330, 1340, 1420, 1430, 1440, 1520. . . Magnetic material

1530. . . Light stacking layer

1610, 1710, 1810. . . Abutment

1 is a cross-sectional view of a conventional light emitting device.

2 is a top plan view of a conventional light emitting device.

3(a) and 3(b) are cross-sectional views of a light emitting device according to an embodiment of the invention.

4 is a top plan view of a light emitting device according to another embodiment of the present invention.

FIG. 5 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

FIG. 6 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

FIG. 7 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

FIG. 8 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

9(a) to 9(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention.

FIG. 10 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

FIG. 11 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

FIG. 12 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

FIG. 13 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

14(a) to 14(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention.

Figure 15 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

Figure 16 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

Figure 17 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

FIG. 18 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

19(a) to 19(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention.

FIG. 20 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

Figure 21 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

Figure 22 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

23 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

24(a) to 24(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention.

Figure 25 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

FIG. 26 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

Figure 27 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

28 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

29(a) to 29(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention.

FIG. 30 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

Figure 31 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

32 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

Figure 33 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the present invention.

34(a) to 34(b) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention.

Figure 35 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

Figure 36 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

Figure 37 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

FIG. 38 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the invention.

39(a) to 39(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention.

40(a) to 40(c) are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the present invention.

Figure 41 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

Figure 42 is a cross-sectional view showing the structure of a light-emitting device according to an embodiment of the invention.

43 and 44 are cross-sectional views showing the structure of a light-emitting device according to an embodiment of the invention.

Figure 45 is a graph showing the output power of light emitted by a light-emitting device having a magnetic substrate, in accordance with an embodiment of the invention.

300. . . Illuminating device

310, 320, 370, 380. . . electrode

330. . . First doped layer

340. . . Second doped layer

350. . . Semiconductor light emitting layer

360. . . magnetic field

Claims (23)

A light-emitting device comprising: a light-emitting stack layer comprising a first surface, a second surface and an active layer; a first electrode electrically coupled to the first surface of the light-emitting stack layer; a second electrode Electrically coupled to the second surface of the light emitting stack, wherein the first surface and the second surface are on opposite sides of the active layer, and the first surface and the second surface are located in the light a magnetic material coupled to the first electrode or the second electrode to apply a magnetic field on the light emitting stacked layer, wherein the magnetic material is a magnetic film or a magnetic block, and the magnetic material is The first electrode or the second electrode is electrically connected, and the magnetic material has a surface magnetic force greater than 0.01 Tesla. The light-emitting device of claim 1, wherein the light-emitting stack layer comprises: a first doped layer disposed on a side of the light-emitting stack layer adjacent to the first surface; a second doped layer, And disposed on a side of the light-emitting stack layer adjacent to the second surface, wherein the active layer is disposed between the first doped layer and the second doped layer. The light emitting device of claim 2, wherein the light emitting stacked layer further comprises: a transparent conductive layer disposed above the first doped layer. The illuminating device of claim 2, wherein the illuminating stack further comprises: a blocking layer disposed between the first electrode and the first doping layer for blocking the first electrode A portion of the electrical connection with the first doped layer. The illuminating device of claim 2, wherein the illuminating stack further comprises: an isolating layer disposed between the second electrode and the magnetic material for isolating the second electrode from the first electrode The area below. The illuminating device of claim 2, wherein the first doped layer, the second doped layer, the first electrode, the second electrode, or the upper surface or the lower surface of the magnetic material It also includes making a rough pattern, a trapezoidal pattern, a circular pattern or a photonic crystal layer. The illuminating device of claim 2, wherein the luminescent stack further comprises: a mirror layer disposed between the second doped layer and the magnetic material or between the magnetic material and the second electrode For reflecting light emitted from the active layer. The light emitting device of claim 2, wherein the first doped layer and the second doped layer comprise a P doped layer or an N doped layer. The light-emitting device of claim 1, further comprising: a substrate disposed between the light-emitting stack layer and the magnetic material. The illuminating device of claim 9, wherein the illuminating stack layer comprises: a first doped layer; a second doped layer disposed on the substrate and below the first doped layer; and an active layer disposed between the first doped layer and the second doped layer . The light emitting device of claim 10, wherein the light emitting stacked layer further comprises: a transparent conductive layer disposed above the first doped layer. The illuminating device of claim 10, wherein the illuminating stack further comprises: a blocking layer disposed between the first electrode and the first doping layer for blocking the first electrode A portion electrically connected to the first doped layer. The illuminating device of claim 10, wherein the first doped layer, the second doped layer, the first electrode, the second electrode, the substrate or the upper surface or the lower surface of the magnetic material The surface further includes a rough pattern, a trapezoidal pattern, a circular pattern or a photonic crystal layer. The illuminating device of claim 10, wherein the illuminating stack layer further comprises: a mirror layer disposed between the second doped layer and the substrate or between the substrate and the magnetic material, The light emitted from the active layer is reflected. The light emitting device of claim 10, wherein the first doped layer and the second doped layer comprise a P doped layer or an N doped layer. The illuminating device of claim 9, wherein the illuminating device The material of the bottom includes Si, SiC, GaN, GaP, GaAs, sapphire, ZnO or AlN. The illuminating device of claim 9, wherein the substrate has a thickness greater than 10 microns. The light-emitting device of claim 2, wherein the material of the light-emitting stack layer comprises GaAs, InP, GaN, GaP, AlP, AlAs, InAs, GaSb, InSb, CdS, CdSe, ZnS or ZnSe. The illuminating device of claim 1, wherein the illuminating stack layer is formed in the form of a transitional inverted pyramid. The illuminating device of claim 1, wherein the luminescent stack layer is coupled to the magnetic material by an epoxy resin, a metal bond, a wafer bond, an epitaxial embedding or a coating process. The illuminating device of claim 1, wherein the magnetic material comprises Rb, Ru, Tb, Nd, Fe, Pg, Co, Ni, Mn, Cr, Cu, Cr2, Pt, Sm, Sb, Pt or Its alloy. The illuminating device according to claim 1, wherein the magnetic material comprises one of oxides of Mn, Fe, Co, Cu and V, Cr ₂ O ₃ , CrS, MnS, MnSe, MnTe, Mn, Fe, Fluoride of Co or Ni, chloride of V, Cr, Fe, Co, Ni and Cu, bromide of Cu, CrSb, MnAs, MnBi, α-Mn, MnCl ₂ . 4H ₂ O, MnBr ₂ . 4H ₂ O, CuCl ₂ . 2H ₂ O, Co(NH ₄ )x(SO ₄ )xCl ₂ . 6H ₂ O, FeCo ₃ and FeCo ₃ . 2MgCO ₃ . The illuminating device of claim 1, wherein the magnetic material applies a magnetic field on the luminescent wafer to change a current density distribution of the luminescent stacked layer, thereby increasing brightness of the illuminating device.