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TWI459553B - Micro-structure having taper conformation and manufacturing method thereof - Google Patents

Micro-structure having taper conformation and manufacturing method thereof Download PDF

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Publication number
TWI459553B
TWI459553B TW101108823A TW101108823A TWI459553B TW I459553 B TWI459553 B TW I459553B TW 101108823 A TW101108823 A TW 101108823A TW 101108823 A TW101108823 A TW 101108823A TW I459553 B TWI459553 B TW I459553B
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microstructure
etching operation
substrate
tapered structure
buffer layer
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TW101108823A
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Chinese (zh)
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TW201338154A (en
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Chin Lung Fang
Chiao Yang Cheng
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Wafer Works Optronics Corp
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Description

具有錐狀構造之微結構及其製作方法 Microstructure with tapered structure and manufacturing method thereof

本發明是有關於一種具有錐狀構造之微結構及其製作方法,尤指一種針對頂部加以設計可提升出光效率之特殊形狀構造之微結構及其製作方法。 The present invention relates to a microstructure having a tapered structure and a manufacturing method thereof, and more particularly to a microstructure having a special shape structure designed to enhance light extraction efficiency at the top and a manufacturing method thereof.

現有之光電元件,如發光二極體、光感測器或太陽能電池,經常會被施予圖案化技術以增加光學效能。例如於發光二極體之表面或其基板進行圖案化製程,以增加發光二極體之出光效率。再或例如於光感測器之表面形成圖案化微結構,以增加光吸收效率。又或例如於太陽能電池之表面進行圖案化製程並以進行此製程所得之圖案化層做為抗反射層,進一步提高光子進入太陽能電池之通量。 Existing optoelectronic components, such as light-emitting diodes, light sensors or solar cells, are often subjected to patterning techniques to increase optical performance. For example, a surface of the light-emitting diode or a substrate thereof is patterned to increase the light-emitting efficiency of the light-emitting diode. A patterned microstructure is then formed, for example, on the surface of the photosensor to increase light absorption efficiency. Alternatively, for example, a patterning process is performed on the surface of the solar cell and the patterned layer obtained by performing the process is used as an anti-reflection layer to further increase the flux of photons into the solar cell.

然而,現有之圖案化技術係採用單一蝕刻製程。其所形成之圖案化微結構,其中之各微結構並沒有分為第一部分及轉折延伸之第二部分,亦未針對各微結構之頂部加以設計可提升出光效率之特殊形狀構造。此外,相鄰之微結構之間距(Pitch)係大於各微結構本身之直徑,亦即相鄰之微結構間之間隔(Space)仍然無法被消除。如此一來,圖案化微結構於光電元件之覆蓋率即有所限制 ,光電元件之出光效率因此仍然有相當大之提升空間。前述皆為仍待解決之技術課題。 However, existing patterning techniques employ a single etching process. The patterned microstructure formed by the microstructure is not divided into the first portion and the second portion of the transition, and the special shape structure for improving the light efficiency is not designed for the top of each microstructure. In addition, the pitch between adjacent microstructures is larger than the diameter of each microstructure, that is, the space between adjacent microstructures cannot be eliminated. As a result, the coverage of the patterned microstructure in the optoelectronic component is limited. Therefore, the light-emitting efficiency of the photovoltaic element still has considerable room for improvement. All of the above are technical issues still to be solved.

有鑑於習知技術之各項問題,本發明人基於多年研究開發與諸多實務經驗,提出一種具有錐狀構造之微結構及其製作方法,以作為改善上述缺點之實現方式與依據。 In view of various problems of the prior art, the inventors have proposed a microstructure having a tapered structure and a manufacturing method thereof based on years of research and development and many practical experiences, as an implementation method and basis for improving the above disadvantages.

本發明之其一目的在於,提供一大幅提升了元件之出光效率或光子進入元件之通量之具有錐狀構造之微結構及其製作方法。 It is an object of the present invention to provide a microstructure having a tapered structure that greatly enhances the light extraction efficiency of a component or the flux of photons entering a component, and a method of fabricating the same.

本發明之另一目的在於,提供一縮小了相鄰之微結構之間隔之具有錐狀構造之微結構及其製作方法。 Another object of the present invention is to provide a microstructure having a tapered structure that reduces the spacing between adjacent microstructures and a method of fabricating the same.

本發明之再一目的在於,提供一調整進行第二蝕刻動作之相關參數,以控制本體其第一部分與第二部分之體積比例,進一步得到設計上或後續元件製程所需之最佳體積比例,且若進行第二蝕刻動作之時間長度足夠,則具有為立體錐狀之第二部分將完全取代第一部分,以形成為三面角錐體之微結構之具有錐狀構造之微結構及其製作方法。 It is still another object of the present invention to provide an adjustment parameter for performing a second etching operation to control the volume ratio of the first portion and the second portion of the body to further obtain an optimum volume ratio required for design or subsequent component processing. And if the length of time for performing the second etching operation is sufficient, the second portion having a three-sided pyramid shape completely replaces the first portion to form a microstructure having a pyramidal structure and a micro-structure having a triangular structure and a manufacturing method thereof.

依據本發明之上述目的,本發明提供一種具有錐狀構造之微結構,包括材料為單晶材料之本體,本體包括為立體狀之第一部分以及為立體錐狀之第二部分,第二部分位於第一部分之上,且第一部分與第二部分彼此相連,第一部分之上緣與第二部分之下緣之間具有轉折交界,使得第二部分由轉折交界朝遠離第一部分之方向轉折延伸。 According to the above object of the present invention, the present invention provides a microstructure having a tapered structure, comprising a body of a single crystal material, the body comprising a first portion that is three-dimensional and a second portion that is a three-dimensional cone, and the second portion is located Above the first portion, and the first portion and the second portion are connected to each other, the upper edge of the first portion and the lower edge of the second portion have a turning boundary such that the second portion extends from the turning boundary in a direction away from the first portion.

依據本發明之上述目的,本發明提供再一種具有錐狀構造之微結 構之製作方法,係由下列步驟所構成:於材料為單晶材料之基材、緩衝層或元件上進行曝光顯影動作以定義出至少一微結構於基材、緩衝層或元件上;進行第一乾式蝕刻動作2至120分鐘或第一濕式蝕刻動作2至120分鐘於已定義出微結構之基材、緩衝層或元件,以形成微結構之本體於基材、緩衝層或元件上;以及進行第二乾式蝕刻動作1至40分鐘或第二濕式蝕刻動作1至40分鐘於已形成本體之基材、緩衝層或元件,以形成為立體錐狀之第二部分於本體,此時本體即包括了第一部分及第二部分,且第一部分之上緣與第二部分之下緣之間具有轉折交界,第二部分由轉折交界朝遠離第一部分之方向向內轉折延伸。 According to the above object of the present invention, the present invention provides a further microjunction having a tapered configuration The method for fabricating the structure comprises the following steps: performing an exposure and development operation on a substrate, a buffer layer or an element whose material is a single crystal material to define at least one microstructure on the substrate, the buffer layer or the component; a dry etching operation for 2 to 120 minutes or a first wet etching operation for 2 to 120 minutes on a substrate, buffer layer or element having a microstructure defined to form a microstructure onto the substrate, buffer layer or component; And performing a second dry etching operation for 1 to 40 minutes or a second wet etching operation for 1 to 40 minutes on the substrate, the buffer layer or the element having formed the body to form a second portion of the solid cone shape on the body. The body includes a first portion and a second portion, and the upper edge of the first portion and the lower edge of the second portion have a turning boundary, and the second portion extends inwardly from the turning boundary in a direction away from the first portion.

本發明利用單晶材料不同晶面之蝕刻速率係為不同之特性,以形成為立體錐狀之第二部分於本體,本體即包括了第一部分及第二部分,亦即本發明係針對各微結構之頂部加以設計可提升出光效率之特殊形狀構造。因此本發明之具有錐狀構造之微結構可大幅提升元件之出光效率或光子進入元件之通量,且可一併減少磊晶成長所產生之晶格缺陷,並可降低元件之熱效應。另外,本發明之第二乾式蝕刻動作或第二濕式蝕刻動作,可縮小相鄰之微結構之間隔,亦即相鄰之微結構間之間隔可為零,進一步提升了微結構於元件之覆蓋率,元件之出光效率因此亦被提升。此外,本發明之製作方法可藉由調整進行第二蝕刻動作之相關參數而加以控制本體其第一部分與第二部分之體積比例,以得到設計上或後續元件製程所需之最佳體積比例。若進行第二蝕刻動作之時間長度足夠,直至最後,具有為立體錐狀之第二部分將完全取代第一部分,以形成為三面角錐體之微結構。 The etch rate of different crystal faces of the single crystal material is different, so as to form a second part of the three-dimensional cone shape on the body, the body includes the first part and the second part, that is, the invention is directed to each micro The top of the structure is designed to enhance the special shape of the light efficiency. Therefore, the microstructure having the tapered structure of the present invention can greatly improve the light extraction efficiency of the element or the flux of the photon into the element, and can simultaneously reduce the lattice defects generated by the epitaxial growth and reduce the thermal effect of the element. In addition, the second dry etching operation or the second wet etching operation of the present invention can reduce the interval between adjacent microstructures, that is, the interval between adjacent microstructures can be zero, further improving the microstructure in the component. Coverage, the light extraction efficiency of the components is also improved. In addition, the fabrication method of the present invention can control the volume ratio of the first portion to the second portion of the body by adjusting the relevant parameters for performing the second etching operation to obtain the optimum volume ratio required for the design or subsequent component process. If the second etching operation is performed for a sufficient length of time, until the end, the second portion having a three-dimensional pyramid shape will completely replace the first portion to form a microstructure of the trihedral pyramid.

茲為使貴審查委員對本發明之技術特徵及所達到之功效有更進一步之瞭解與認識,謹佐以較佳之實施例及配合詳細之說明如後。 For a better understanding and understanding of the technical features and the efficacies of the present invention, the preferred embodiments and the detailed description are as follows.

1‧‧‧本體 1‧‧‧ Ontology

11‧‧‧第一部分 11‧‧‧Part 1

12‧‧‧第二部份 12‧‧‧ second part

13‧‧‧轉折交界 13‧‧‧ Turning junction

2‧‧‧基材 2‧‧‧Substrate

3‧‧‧元件 3‧‧‧ components

100~500‧‧‧步驟 100~500‧‧‧Steps

第1圖係為本發明之具有錐狀構造之微結構之較佳實施例之示意圖;第2A圖係為本發明之具有錐狀構造之微結構之較佳實施例之底部形狀示意圖;第2B圖係為本發明之具有錐狀構造之微結構之較佳實施例之底部形狀示意圖;第2C圖係為本發明之具有錐狀構造之微結構之較佳實施例之底部形狀示意圖;第3圖係為本發明之具有錐狀構造之微結構之較佳實施例製作於基材上之示意圖;第4圖係為本發明之具有錐狀構造之微結構之較佳實施例製作於元件上之示意圖;第5A圖係為本發明之具有錐狀構造之微結構與現有之圖案化微結構之光路示意圖;第5B圖係為本發明之具有錐狀構造之微結構與現有之光電轉換元件之光路示意圖;第6圖係為本發明之具有錐狀構造之微結構之製作方法之較佳實施例之步驟示意圖; 第7圖係為本發明之具有錐狀構造之微結構之製作方法之第二蝕刻動作縮小微結構之間隔之示意圖;第8圖係為本發明之具有錐狀構造之微結構之製作方法其進行不同蝕刻時間長度所形成之微結構之原子力顯微鏡觀測圖;第9圖係為本發明之具有錐狀構造之微結構之製作方法其進行不同蝕刻時間長度所形成之微結構之掃瞄式電子顯微鏡觀測圖;以及第10圖係為本發明之具有錐狀構造之微結構之製作方法其進行不同蝕刻時間長度所形成之微結構之掃瞄式電子顯微鏡觀測圖。 1 is a schematic view of a preferred embodiment of a microstructure having a tapered structure according to the present invention; and FIG. 2A is a schematic view of a bottom shape of a preferred embodiment of the microstructure having a tapered structure of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2C is a bottom view of a preferred embodiment of a microstructure having a tapered structure; FIG. 2C is a bottom view of a preferred embodiment of a microstructure having a tapered structure; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 4 is a schematic view showing a preferred embodiment of a microstructure having a tapered structure of the present invention, and FIG. 4 is a preferred embodiment of a microstructure having a tapered structure according to the present invention. Figure 5A is a schematic view of the optical path of the tapered structure and the existing patterned microstructure of the present invention; and Figure 5B is the microstructure of the tapered structure of the present invention and the existing photoelectric conversion element FIG. 6 is a schematic view showing the steps of a preferred embodiment of a method for fabricating a microstructure having a tapered structure; 7 is a schematic view showing a second etching operation of the method for fabricating a microstructure having a tapered structure according to the present invention, and FIG. 8 is a schematic view showing a method for fabricating a microstructure having a tapered structure according to the present invention; Atomic force microscopy observation of microstructures formed by different etching time lengths; Fig. 9 is a scanning electron of microstructures formed by different etching time lengths according to the method for fabricating the pyramid structure of the present invention Microscope observation chart; and Fig. 10 is a scanning electron microscope observation view of the microstructure formed by the tapered structure of the present invention, which is formed by different etching time lengths.

以下將參照相關圖式,說明本發明具有錐狀構造之微結構及其製作方法,為使便於理解,下述實施例中之相同元件係以相同之符號標示來說明。 Hereinafter, the microstructure of the present invention having a tapered structure and a method of fabricating the same will be described with reference to the related drawings. For ease of understanding, the same elements in the following embodiments are denoted by the same reference numerals.

首先,請參閱第1圖所示,其係繪示本發明之具有錐狀構造之微結構之較佳實施例之示意圖。本發明之具有錐狀構造之微結構包括一本體1。前述本體1之材料為單晶材料。本體1包括第一部分11及第二部分12。第二部分12位於第一部分11之上,且第一部分11與第二部分12彼此相連。第一部分11之上緣與第二部分12之下緣之間具有一轉折交界13,使得第二部分12由轉折交界13朝遠離第一部分11之方向向內轉折延伸。第一部分11為立體狀。前述立體狀例如為立體圓柱狀或立體圓錐狀。第二部分12為立體錐狀。前述立體錐狀例如為立體圓錐狀或立體角錐狀。前述單晶材料例如為藍寶石、單晶矽或碳化矽等等單晶材料。 First, referring to Fig. 1, there is shown a schematic view of a preferred embodiment of the microstructure having a tapered structure of the present invention. The microstructure of the present invention having a tapered configuration includes a body 1. The material of the aforementioned body 1 is a single crystal material. The body 1 includes a first portion 11 and a second portion 12. The second portion 12 is located above the first portion 11, and the first portion 11 and the second portion 12 are connected to each other. A transition junction 13 is formed between the upper edge of the first portion 11 and the lower edge of the second portion 12 such that the second portion 12 extends inwardly from the transition junction 13 in a direction away from the first portion 11. The first portion 11 is three-dimensional. The three-dimensional shape is, for example, a three-dimensional column shape or a three-dimensional cone shape. The second portion 12 is a three-dimensional cone. The three-dimensional tapered shape is, for example, a three-dimensional cone shape or a cube-shaped pyramid shape. The aforementioned single crystal material is, for example, a single crystal material such as sapphire, single crystal germanium or tantalum carbide.

請再一併參閱第2A~2C圖所示,其係繪示本發明之具有錐狀構造之微結構之較佳實施例之底部形狀示意圖。如第2A圖所示,本體1之底部可為圓形。如第2B圖所示,本體1之底部可為正方形。如第2C圖所示,本體1之底部可為正六邊形。前述圓形、正方形或正六邊形僅為舉例但不為所限。本體1底部之形狀為熟知本領域之相關人員所能夠輕易了解,故於此不再贅述。 Referring to FIGS. 2A-2C again, it is a schematic diagram showing the bottom shape of a preferred embodiment of the microstructure having a tapered structure of the present invention. As shown in Fig. 2A, the bottom of the body 1 can be circular. As shown in Fig. 2B, the bottom of the body 1 can be square. As shown in Fig. 2C, the bottom of the body 1 may be a regular hexagon. The aforementioned circular, square or regular hexagon is merely an example but not limited. The shape of the bottom of the body 1 can be easily understood by those skilled in the art, and therefore will not be described again.

請再一併參閱第3圖所示,其係繪示本發明之具有錐狀構造之微結構之較佳實施例製作於基材上之示意圖。本發明之具有錐狀構造之微結構可製作於基材2上。製作於基材2上之本體1可為複數個。相鄰之各本體1之間之間隔(Space)係等於或大於零。前述基材2例如為藍寶石基板、單晶矽基板或碳化矽基板等等單晶基材。 Referring to FIG. 3 again, it is a schematic view showing a preferred embodiment of the microstructure having a tapered structure of the present invention fabricated on a substrate. The microstructure having the tapered structure of the present invention can be fabricated on the substrate 2. The body 1 fabricated on the substrate 2 can be plural. The space between adjacent bodies 1 is equal to or greater than zero. The substrate 2 is, for example, a single crystal substrate such as a sapphire substrate, a single crystal germanium substrate, or a tantalum carbide substrate.

需特別說明,本發明之具有錐狀構造之微結構亦可製作於具有緩衝層之基材2其緩衝層上[圖中未示]。製作於緩衝層上之本體1可為複數個。相鄰之各本體1之間之間隔(Space)係等於或大於零。前述基材2例如為藍寶石基材。前述緩衝層例如為氮化鎵緩衝層。 It should be particularly noted that the microstructure having the tapered structure of the present invention can also be fabricated on the buffer layer of the substrate 2 having the buffer layer [not shown). The body 1 fabricated on the buffer layer may be plural. The space between adjacent bodies 1 is equal to or greater than zero. The substrate 2 is, for example, a sapphire substrate. The buffer layer is, for example, a gallium nitride buffer layer.

請再一併參閱第4圖所示,其係繪示本發明之具有錐狀構造之微結構之較佳實施例製作於元件上之示意圖。本發明之具有錐狀構造之微結構可製作於元件3上。製作於元件3上之本體1可為複數個。相鄰之各本體1之間之間隔(Space)係等於或大於零。前述元件3例如為發光二極體元件、光感測元件或太陽能電池元件等等元件。 Referring to FIG. 4 again, it is a schematic view showing a preferred embodiment of the microstructure having a tapered structure of the present invention fabricated on an element. The microstructure of the present invention having a tapered configuration can be fabricated on the element 3. The body 1 fabricated on the component 3 can be plural. The space between adjacent bodies 1 is equal to or greater than zero. The aforementioned element 3 is, for example, an element such as a light emitting diode element, a light sensing element or a solar cell element.

如前所述,本發明之具有錐狀構造之微結構可製作於基材2、緩衝層或元件3上。當具有錐狀構造之微結構製作於基材2或緩衝層上時,可大幅提升後續所欲製作元件之出光效率,進一步提升所欲製作之元件之外部量子效率。且可一併減少後續製作所欲製作元件時,磊晶成長所產生之晶格缺陷。 As described above, the microstructure having the tapered structure of the present invention can be fabricated on the substrate 2, the buffer layer or the element 3. When the microstructure having the tapered structure is formed on the substrate 2 or the buffer layer, the light extraction efficiency of the subsequently fabricated component can be greatly improved, and the external quantum efficiency of the component to be fabricated can be further improved. Moreover, the lattice defects generated by the epitaxial growth can be reduced when the components are to be fabricated by the subsequent fabrication.

當具有錐狀構造之微結構製作於發光二極體元件上時,同樣地,可大幅提升發光二極體元件之出光效率,進一步提升發光二極體元件之外部量子效率,並可降低發光二極體元件之熱效應。當具有錐狀構造之微結構製作於太陽能電池元件上時,由於微結構具有為立體錐狀之第二部分,因此,具有錐狀構造之微結構可做為太陽能電池元件之抗反射層,可有效提高光子進入太陽能電池元件之通量。 When the microstructure having the tapered structure is fabricated on the light-emitting diode element, the light-emitting efficiency of the light-emitting diode element can be greatly improved, the external quantum efficiency of the light-emitting diode element can be further improved, and the light-emitting diode can be reduced. The thermal effect of the polar body components. When the microstructure having the tapered structure is fabricated on the solar cell element, since the microstructure has a second portion which is a three-dimensional pyramid shape, the microstructure having the tapered structure can be used as an anti-reflection layer of the solar cell element. Effectively increase the flux of photons into the solar cell components.

請再一併參閱第5A圖所示,其係繪示本發明之具有錐狀構造之微結構與現有之圖案化微結構之光路示意圖。圖面中之光線,如圖面中之箭頭所示,其係由微結構之底部入射,而如圖面左方所示,由於本發明之具有錐狀構造之微結構具有為立體錐狀之第二部分12,因此,相較於如圖面右方所示之現有之圖案化微結構,本發明之具有錐狀構造之微結構具有更佳之破壞全反射功能。且本發明之具有錐狀構造之微結構之間隔(Space)可等於零,因此,本發明之具有錐狀構造之微結構可獲得極佳之覆蓋率。據此,本發明之具有錐狀構造之微結構可大幅提升元件之出光效率,進一步提升元件之外部量子效率。 Please refer to FIG. 5A again, which is a schematic diagram showing the optical path of the tapered structure and the existing patterned microstructure of the present invention. The light in the drawing is shown by the arrow in the figure, which is incident from the bottom of the microstructure, and as shown on the left side of the figure, the microstructure having the tapered structure of the present invention has a three-dimensional cone shape. The second portion 12, therefore, has a tapered structure-like microstructure having better damage to total reflection than the prior art patterned microstructure shown to the right of the figure. Moreover, the space of the microstructure having the tapered structure of the present invention can be equal to zero, and therefore, the microstructure having the tapered structure of the present invention can obtain excellent coverage. Accordingly, the microstructure having the tapered structure of the present invention can greatly improve the light extraction efficiency of the element and further enhance the external quantum efficiency of the element.

請再一併參閱第5B圖所示,其係繪示本發明之具有錐狀構造之微結構與現有之光電轉換元件之光路示意圖。圖面中之光線,如圖 面中之箭頭所示,其係由微結構之頂部入射,而如圖面左方所示,由於本發明之具有錐狀構造之微結構具有為立體錐狀之第二部分12,因此可建構出漸進式折射率效應,進一步有效地將由其頂部入射之光線導引入其內部。反觀,圖面左方所示之現有之光電轉換元件,其有較大之比例之入射光線被反射。據此,可知本發明之具有錐狀構造之微結構若應用於光電轉換元件,可提高光子進入光電轉換元件之通量。前述光電轉換元件例如為太陽能元件或光偵測元件。 Referring to FIG. 5B again, it is a schematic diagram showing the optical path of the microstructure having the tapered structure and the existing photoelectric conversion element of the present invention. The light in the picture, as shown As indicated by the arrow in the face, it is incident from the top of the microstructure, and as shown on the left side of the figure, since the microstructure having the tapered structure of the present invention has the second portion 12 which is a three-dimensional pyramid shape, it can be constructed. A progressive refractive index effect is introduced to further effectively introduce light incident from the top thereof into the interior thereof. In contrast, the existing photoelectric conversion element shown on the left side of the drawing has a larger proportion of incident light reflected. Accordingly, it is understood that the microstructure having the tapered structure of the present invention can be applied to a photoelectric conversion element to increase the flux of photons entering the photoelectric conversion element. The aforementioned photoelectric conversion element is, for example, a solar element or a photodetection element.

請再參閱第6圖所示,其係繪示本發明之具有錐狀構造之微結構之製作方法之較佳實施例之步驟示意圖。本發明之具有錐狀構造之微結構之製作方法係由下列步驟所構成:步驟100:於基材、緩衝層或元件上進行曝光顯影動作以定義出至少一微結構於基材、緩衝層或元件上。前述基材例如為藍寶石基板、單晶矽基板或碳化矽基板等等單晶基材。前述緩衝層例如為氮化鎵緩衝層。前述元件例如為發光二極體元件、光感測元件或太陽能電池元件等等元件。前述曝光顯影動作可藉由步進機(stepper)進行。 Please refer to FIG. 6 again, which is a schematic diagram showing the steps of a preferred embodiment of the method for fabricating the microstructure having the tapered structure of the present invention. The method for fabricating the microstructure having the tapered structure of the present invention comprises the following steps: Step 100: performing an exposure and development operation on the substrate, the buffer layer or the component to define at least one microstructure on the substrate, the buffer layer or On the component. The substrate is, for example, a single crystal substrate such as a sapphire substrate, a single crystal germanium substrate or a tantalum carbide substrate. The buffer layer is, for example, a gallium nitride buffer layer. The aforementioned elements are, for example, elements such as light emitting diode elements, light sensing elements or solar cell elements. The aforementioned exposure and development operation can be performed by a stepper.

步驟200:進行硬烤動作1至30分鐘於已定義出微結構之基材、緩衝層或元件。 Step 200: Perform a hard baking action for 1 to 30 minutes on a substrate, buffer layer or component that has defined a microstructure.

步驟300:進行清洗動作5至20分鐘於已定義出微結構之基材、緩衝層或元件。 Step 300: Perform a cleaning action for 5 to 20 minutes on a substrate, buffer layer or component that has defined a microstructure.

步驟400:進行第一乾式蝕刻動作2至120分鐘或第一濕式蝕刻動作2至120分鐘於已定義出微結構之基材、緩衝層或元件,以形 成微結構之本體於基材、緩衝層或元件上。前述第一乾式蝕刻動作例如為離子耦合式電漿反應離子蝕刻。 Step 400: performing a first dry etching operation for 2 to 120 minutes or a first wet etching operation for 2 to 120 minutes on a substrate, a buffer layer or an element in which a microstructure has been defined, to form The microstructure is formed on the substrate, buffer layer or component. The first dry etching operation is, for example, ion-coupled plasma reactive ion etching.

步驟500:進行第二乾式蝕刻動作1至40分鐘或第二濕式蝕刻動作1至40分鐘於已形成本體之基材、緩衝層或元件,利用本體其單晶材料不同晶面之蝕刻速率係為不同之特性,以形成為立體錐狀之第二部分於本體,此時本體即包括了第一部分及第二部分,且第一部分之上緣與第二部分之下緣之間具有轉折交界,第二部分由轉折交界朝遠離第一部分之方向向內轉折延伸。前述第二乾式蝕刻動作例如為乾式酸蝕刻動作。前述第二濕式蝕刻動作例如為高溫濕式酸蝕刻動作。前述乾式酸蝕刻動作或高溫濕式酸蝕刻動作所採用之酸蝕刻液之溫度介於攝氏200至400度之間,且其硫酸及磷酸之比值係介於0.1至10之間。 Step 500: performing a second dry etching operation for 1 to 40 minutes or a second wet etching operation for 1 to 40 minutes on a substrate, a buffer layer or an element having formed a body, and using an etching rate system of different crystal faces of the single crystal material of the body For the different characteristics, to form a second portion of the three-dimensional cone shape on the body, the body includes the first portion and the second portion, and the upper edge of the first portion and the lower edge of the second portion have a turning boundary. The second portion extends inwardly from the turning junction toward the inner portion away from the first portion. The second dry etching operation is, for example, a dry acid etching operation. The second wet etching operation is, for example, a high temperature wet acid etching operation. The acid etchant used in the dry acid etching operation or the high temperature wet acid etching operation has a temperature between 200 and 400 degrees Celsius, and the ratio of sulfuric acid to phosphoric acid is between 0.1 and 10.

請再一併參閱第7圖所示,其係繪示本發明之具有錐狀構造之微結構之製作方法之第二蝕刻動作縮小微結構之間隔之示意圖。如圖所示,進行前述步驟400所形成之微結構以虛線表示;進行前述步驟500所形成之微結構以實線表示。可得知,在相鄰之微結構之間距(Pitch)不變之情形下,進行第二乾式蝕刻動作或第二濕式蝕刻動作,可縮小相鄰之微結構之間隔。 Please refer to FIG. 7 again, which is a schematic diagram showing the interval between the second etching action and the reduced microstructure of the method for fabricating the microstructure having the tapered structure of the present invention. As shown, the microstructure formed by performing the foregoing step 400 is indicated by a broken line; the microstructure formed by the foregoing step 500 is indicated by a solid line. It can be seen that in the case where the pitch between adjacent microstructures is constant, the second dry etching operation or the second wet etching operation is performed to narrow the interval between adjacent microstructures.

請再一併參閱第8圖所示,其係繪示本發明之具有錐狀構造之微結構之製作方法其進行不同蝕刻時間長度所形成之微結構之原子力顯微鏡觀測圖。如圖所示,未進行第二乾式蝕刻動作或第二濕式蝕刻動作之本體並不具有為立體錐狀之第二部分。而圖中之狀態1至5依序表示進行蝕刻時間長度漸長,具有錐狀構造之微結構之狀態變化趨勢。如圖所示,進行第二乾式蝕刻動作或第二濕式 蝕刻動作,便可形成為立體錐狀之第二部分於本體。且隨著進行蝕刻動作之時間愈長,相鄰之微結構之間隔愈小。此外,隨著進行蝕刻動作之時間長度不同,為立體錐狀之第二部分之樣態亦有所不同。若進行第二蝕刻動作之時間長度足夠,直至最後,具有為立體錐狀之第二部分將完全取代第一部分,以形成為三面角錐體之微結構。 Please refer to FIG. 8 again, which shows an atomic force microscope observation of the microstructure formed by the method of manufacturing the microstructure having the tapered structure of the present invention. As shown, the body that is not subjected to the second dry etching operation or the second wet etching operation does not have the second portion that is a three-dimensional tapered shape. On the other hand, the states 1 to 5 in the figure sequentially indicate that the etching time length is gradually increased, and the state of the microstructure having the tapered structure tends to change. As shown, a second dry etch or second wet The etching operation can be formed into a second portion of the three-dimensional cone shape on the body. And the longer the etching operation takes place, the smaller the interval between adjacent microstructures. In addition, as the length of time during which the etching operation is performed is different, the second portion of the three-dimensional pyramid shape is also different. If the second etching operation is performed for a sufficient length of time, until the end, the second portion having a three-dimensional pyramid shape will completely replace the first portion to form a microstructure of the trihedral pyramid.

請再一併參閱第9圖所示,其係繪示本發明之具有錐狀構造之微結構之製作方法其進行不同蝕刻時間長度所形成之微結構之掃瞄式電子顯微鏡觀測圖。如圖所示,未進行第二乾式蝕刻動作或第二濕式蝕刻動作之本體之間隔相當明顯。而圖中之狀態1至5依序表示進行蝕刻時間長度漸長,具有錐狀構造之微結構之狀態變化趨勢。如圖所示,隨著進行蝕刻動作之時間愈長,相鄰之微結構之間隔愈小。此外,隨著進行第二蝕刻動作之時間長度不同,為立體錐狀之第二部分之樣態亦有所不同。若進行第二蝕刻動作之時間長度足夠,直至最後,具有為立體錐狀之第二部分將完全取代第一部分,以形成為三面角錐體之微結構。 Please refer to FIG. 9 again, which is a scanning electron microscope observation diagram of the microstructure formed by the method of manufacturing the microstructure having the tapered structure of the present invention. As shown, the spacing of the bodies that are not subjected to the second dry etching operation or the second wet etching operation is quite significant. On the other hand, the states 1 to 5 in the figure sequentially indicate that the etching time length is gradually increased, and the state of the microstructure having the tapered structure tends to change. As shown, the longer the etching operation takes place, the smaller the spacing between adjacent microstructures. Further, as the length of time during which the second etching operation is performed is different, the state of the second portion which is a three-dimensional pyramid shape is also different. If the second etching operation is performed for a sufficient length of time, until the end, the second portion having a three-dimensional pyramid shape will completely replace the first portion to form a microstructure of the trihedral pyramid.

請再一併參閱第10圖所示,其係繪示本發明之具有錐狀構造之微結構之製作方法其進行不同蝕刻時間長度所形成之微結構之掃瞄式電子顯微鏡觀測圖。如圖所示,未進行第二乾式蝕刻動作或第二濕式蝕刻動作之本體並不具有為立體錐狀之第二部分。而圖中之狀態1至5依序表示進行蝕刻時間長度漸長,具有錐狀構造之微結構之狀態變化趨勢。如圖所示,便可形成為立體錐狀之第二部分於本體。且隨著進行蝕刻動作之時間愈長,相鄰之微結構之間隔愈小。此外,隨著進行第二蝕刻動作之時間長度不同,為立體 錐狀之第二部分之樣態亦有所不同。 Please refer to FIG. 10 again, which is a scanning electron microscope observation diagram of the microstructure formed by the method of manufacturing the microstructure having the tapered structure of the present invention. As shown, the body that is not subjected to the second dry etching operation or the second wet etching operation does not have the second portion that is a three-dimensional tapered shape. On the other hand, the states 1 to 5 in the figure sequentially indicate that the etching time length is gradually increased, and the state of the microstructure having the tapered structure tends to change. As shown, a second portion of the three-dimensional cone shape can be formed on the body. And the longer the etching operation takes place, the smaller the interval between adjacent microstructures. In addition, as the length of time for performing the second etching operation is different, it is three-dimensional The shape of the second part of the cone is also different.

需特別說明,上述本體其第一部分與第二部分之體積比例,可藉由調整進行第二蝕刻動作之相關參數而加以控制,詳言之,若調整進行第二蝕刻動作之溫度以及時間長度,則可控制本體其第一部分與第二部分之體積比例。例如溫度愈高、時間愈長,則第一部分與第二部分之體積比值會愈小;反之,溫度愈低、時間愈短,則第一部分與第二部分之體積比值會愈大。再者,上述係以進行二次蝕刻單一次為例,但二次蝕刻亦可重複進行二次、三次、四次或多次。本發明僅舉進行二次蝕刻單一次為例,但不為所限。 It should be specially noted that the volume ratio of the first portion to the second portion of the body can be controlled by adjusting the relevant parameters of the second etching operation. In detail, if the temperature and the length of the second etching operation are adjusted, Then, the volume ratio of the first part to the second part of the body can be controlled. For example, the higher the temperature and the longer the time, the smaller the volume ratio of the first portion to the second portion; conversely, the lower the temperature and the shorter the time, the larger the volume ratio of the first portion to the second portion. Further, the above is exemplified by performing secondary etching once, but the secondary etching may be repeated twice, three times, four times or more. The present invention is merely an example of performing secondary etching once, but is not limited thereto.

綜上所述,本發明具有錐狀構造之微結構及其製作方法至少具有下述之優點: In summary, the microstructure having the tapered structure of the present invention and the manufacturing method thereof have at least the following advantages:

1.大幅提升了元件之出光效率或光子進入元件之通量:本發明利用單晶材料不同晶面之蝕刻速率係為不同之特性,以形成為立體錐狀之第二部分於本體,本體即包括了第一部分及第二部分,亦即本發明係針對各微結構之頂部加以設計可提升出光效率之特殊形狀構造。因此本發明之具有錐狀構造之微結構可大幅提升元件之出光效率或光子進入元件之通量,且可一併減少磊晶成長所產生之晶格缺陷,並可降低元件之熱效應。 1. The light-emitting efficiency of the component or the flux of the photon entering the component is greatly improved: the etching rate of the different crystal faces of the single crystal material is different in the present invention, so as to form the second part of the three-dimensional cone shape on the body, the body is The first part and the second part are included, that is, the present invention is designed for the top of each microstructure to have a special shape structure that enhances light efficiency. Therefore, the microstructure having the tapered structure of the present invention can greatly improve the light extraction efficiency of the element or the flux of the photon into the element, and can simultaneously reduce the lattice defects generated by the epitaxial growth and reduce the thermal effect of the element.

2.縮小了相鄰之微結構之間隔:本發明之第二乾式蝕刻動作或第二濕式蝕刻動作,可縮小相鄰之微結構之間隔,亦即相鄰之微結構間之間隔可為零,進一步提升了微結構於元件之覆蓋率,元件之出光效率因此亦被提升。 2. The spacing between adjacent microstructures is reduced: the second dry etching operation or the second wet etching operation of the present invention can reduce the interval between adjacent microstructures, that is, the interval between adjacent microstructures can be Zero further enhances the coverage of the microstructure in the component, and the light extraction efficiency of the component is also improved.

3.可控制第一部分與第二部分之體積比例:若調整進行第二蝕刻動作之相關參數,例如溫度以及時間長度,則可控制本體其第一部分與第二部分之體積比例,以得到設計上或後續元件製程所需之最佳體積比例。若進行第二蝕刻動作之時間長度足夠,直至最後,具有為立體錐狀之第二部分將完全取代第一部分,以形成為三面角錐體之微結構。 3. The volume ratio of the first part to the second part can be controlled: if the relevant parameters of the second etching action, such as temperature and time length, are adjusted, the volume ratio of the first part to the second part of the body can be controlled to obtain a design. Or the optimum volume ratio required for subsequent component processes. If the second etching operation is performed for a sufficient length of time, until the end, the second portion having a three-dimensional pyramid shape will completely replace the first portion to form a microstructure of the trihedral pyramid.

以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。 The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims.

1‧‧‧本體 1‧‧‧ Ontology

11‧‧‧第一部分 11‧‧‧Part 1

12‧‧‧第二部份 12‧‧‧ second part

13‧‧‧轉折交界 13‧‧‧ Turning junction

Claims (5)

一種具有錐狀構造之微結構之製作方法,係由下列步驟所構成:於材料為單晶材料之一基材、一緩衝層或一元件上進行一曝光顯影動作以定義出至少一微結構於該基材、該緩衝層或該元件上;進行一第一乾式蝕刻動作2至120分鐘或一第一濕式蝕刻動作2至120分鐘於已定義出該微結構之該基材、該緩衝層或該元件,以形成該微結構之一本體於該基材、該緩衝層或該元件上;以及進行一第二乾式蝕刻動作1至40分鐘或一第二濕式蝕刻動作1至40分鐘於已形成該本體之該基材、該緩衝層或該元件,以形成為立體錐狀之一第二部分於該本體,此時該本體即包括了一第一部分及該第二部分,且該第一部分之上緣與該第二部分之下緣之間具有一轉折交界,該第二部分由該轉折交界朝遠離該第一部分之方向向內轉折延伸。 A method for fabricating a microstructure having a tapered structure is formed by performing an exposure developing operation on a substrate, a buffer layer or a component of a single crystal material to define at least one microstructure On the substrate, the buffer layer or the element; performing a first dry etching operation for 2 to 120 minutes or a first wet etching operation for 2 to 120 minutes on the substrate, the buffer layer having defined the microstructure Or the element to form one of the microstructures on the substrate, the buffer layer or the element; and performing a second dry etching operation for 1 to 40 minutes or a second wet etching operation for 1 to 40 minutes Forming the substrate, the buffer layer or the element of the body to form a second portion of the solid cone shape on the body, wherein the body includes a first portion and the second portion, and the first portion A portion of the upper edge and the lower edge of the second portion have a turning boundary, and the second portion extends inwardly from the turning boundary in a direction away from the first portion. 如申請專利範圍第1項所述之具有錐狀構造之微結構之製作方法,其中進行該曝光顯影動作與進行該第一乾式蝕刻動作或該第一濕式蝕刻動作之間,更進行一硬烤動作1至30分鐘於已定義出該微結構之該基材、該緩衝層或該元件;以及進行一清洗動作5至20分鐘於已定義出該微結構之該基材、該緩衝層或該元件。 The method for fabricating a microstructure having a tapered structure according to claim 1, wherein the exposure and development operation is performed between the first dry etching operation or the first wet etching operation. Bake action 1 to 30 minutes on the substrate, the buffer layer or the element in which the microstructure has been defined; and a cleaning action for 5 to 20 minutes on the substrate, the buffer layer or the defined microstructure The component. 如申請專利範圍第1項所述之具有錐狀構造之微結構之製作方法,其中該第一乾式蝕刻動作為離子耦合式電漿反應離子蝕刻,該曝光顯影動作係藉由一步進機進行,該第二乾式蝕刻動作為乾式酸蝕刻動作。 The method for fabricating a microstructure having a tapered structure according to claim 1, wherein the first dry etching operation is ion-coupled plasma reactive ion etching, and the exposure and development operation is performed by a stepping machine. The second dry etching operation is a dry acid etching operation. 如申請專利範圍第1項所述之具有錐狀構造之微結構之製作方法,其中該第二濕式蝕刻動作為高溫濕式酸蝕刻動作,乾式酸蝕刻動作或高溫濕式酸蝕刻動作所採用之酸蝕刻液之溫度介於攝氏200至400度之間,且酸蝕刻液之硫酸及磷酸之比值係介於0.1至10之間。 The method for fabricating a microstructure having a tapered structure according to claim 1, wherein the second wet etching operation is a high temperature wet acid etching operation, a dry acid etching operation or a high temperature wet acid etching operation. The acid etching solution has a temperature between 200 and 400 degrees Celsius, and the ratio of sulfuric acid to phosphoric acid in the acid etching solution is between 0.1 and 10. 如申請專利範圍第1項所述之具有錐狀構造之微結構之製作方法,其中係藉由調整進行該第二蝕刻動作之一溫度以及一時間長度,以控制該本體之該第一部分與該第二部分之一體積比例。 The method for fabricating a microstructure having a tapered structure according to claim 1, wherein the first portion of the body is controlled by adjusting a temperature of the second etching operation and a length of time One volume ratio of the second part.
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