TWI451474B - Method of fabricating a transferable crystalline thin film - Google Patents

Description

Method for making transferable crystal film

On the surface of an arbitrary substrate (such as quartz, glass, polymer sheet, etc.), the synthesis of a low defect density, single crystal semiconductor film is the front-end technology industry in the microelectronics, mechanical optics, micro-electromechanical, biosensors, etc. The composite substrate required in the process. Take the bismuth-based thin film solar cell in the field of optoelectronics as an example: the common process today is to use a chemical vapor deposition process (CVD) to grow a twinned film over glass, but generally the glass substrate is amorphous, and the innate characteristics of this material. The limitation is such that the tantalum material formed thereon cannot grow into a thin film having a single crystal crystal structure. The twinned film on the glass substrate is widely used, for example, it is also used as a microelectronic driving circuit for a liquid crystal display, and the industrial output value is quite large. However, in any case, the carrier mobility of this amorphous germanium film (0.3~0.7cm ² /Vs) is affected by the high density grain boundary interference, which cannot meet the requirements of today's fast electronic operation, nor the high efficiency solar cell. Need; and if a denser circuit is made on it, it is more likely to generate waste heat and consume energy during operation. In order to reduce the grain boundary density in such a crystal structure, the amorphous germanium film on the glass substrate can be recrystallized by laser scanning irradiation, and the grain boundaries are greatly reduced, resulting in a polycrystalline germanium structure superior to amorphous germanium. The carrier mobility is increased to 1~2cm ² /Vs. The material properties required for today's high-efficiency bismuth-based thin-film solar cells are single-crystal films with high carrier mobility, which can quickly separate electron holes, avoid recombination, and effectively improve photoelectric conversion efficiency. However, the large-scale production technology is mainly based on the growth of tantalum film on glass, and the photoelectric conversion efficiency is low. The root cause of the crystal structure problem of such a thin film is that the glass is an amorphous substrate. Therefore, the twinned thin film deposited on the glass naturally becomes an amorphous germanium structure regardless of any deposition method.

Although polycrystalline germanium has a better crystal structure than amorphous germanium, its carrier mobility is still low for high-speed electronic products because the high grain boundary density is still the main problem. In contrast, in a single crystal germanium film structure that does not have a very dense grain boundary, the carrier mobility of the formed circuit is not only much higher than that of polycrystalline germanium. There are many amorphous enamels and the stability is quite good. The present invention is a method of epitaxially forming a single crystal germanium film layer structure on an alumina growth substrate, and then separating it from the alumina growth substrate or transferring it to any other substrate.

Although the single crystal germanium film commonly used in the microelectronics industry has the characteristics of single crystal, that is, there is no grain boundary, there may be a high difference in density inside. Such films still have a sufficiently high carrier mobility (200 cm ² /Vs). In today's single crystal germanium film formation technology, one of the methods is to grow the film directly on the gamma-cut alumina (γ-Al ₂ O ₃ ) substrate by epitaxial technique. The principle of this epitaxial long single crystal germanium film is that the atomic spatial arrangement of the surface of the γ-cut alumina and the (100) germanium film is similar. However, the lattice constants of the two sides are not matched, and although the grown twin film layer has a single crystal structure, there is still a relatively high difference in density. Therefore, along with this technology, the application of laser region melting, ion implantation damage, continuous annealing and the like has been developed to enable recrystallization to release the strain force and eliminate these differences. Although the single crystal germanium film layer grown on the alumina substrate has a relatively high difference in discharge density, the carrier mobility is still on the order of magnitude higher than that of the tantalum film layer obtained on the amorphous growth substrate described above. 200 to 300 (cm ² /Vs).

Considering the cost of industrial production, the alumina substrate is very expensive. If it is formed on a single crystal twin film, it is transferred to a low-cost glass substrate, and then the alumina substrate is recovered and then subjected to surface treatment. It can be used as a stencil to re-use long crystal film, and then transferred to other low-cost substrates, the material cost can be greatly reduced. In a further development, a single crystal germanium film on a flexible substrate such as plastic can be synthesized. The tantalum film on the flexible substrate today is mainly an organic twin film with a relatively low carrier mobility (<1 cm ² /Vs). When the above-mentioned alumina single crystal germanium film structure is applied to fabricate a flexible thin film type solar cell, a single crystal germanium film having a PN junction element can be formed first, and then transferred to a plastic or polymer at a low temperature. On the flexible substrate, not only can it provide more excellent electrical properties than the organic germanium film, but also the single crystal germanium film has excellent mechanical properties, such as excellent fracture toughness, and can be wrapped with a wrap. The substrate is bent and folded to maintain its quality. The key to developing such high-efficiency solar cell technology, or the application of the previously entangled substrate electronics, is how to form a single-crystal germanium film in a large area of glass or plastic in a cost-effective manner. On the substrate, the carrier can have a high carrier drift rate to produce high-speed electronic components. The electronic component produced in the single crystal germanium film is of course much better than the organic germanium-based electronic component formed on the glass or the organic germanium-based electronic component on the plastic, which has better electrical and reliability. The field of products.

It is well known that a prerequisite for epitaxial low defect single crystal germanium film is to have lattice matching, which can be used as a seed growth substrate, and in addition, the growth substrate must be able to withstand a certain high crystal temperature to achieve a certain single crystal. Phase change. Because of the limitation of epitaxial temperature and high lattice matching (lattice mismatch<5%) growth substrate, the technical obstacle to form a single crystal germanium film directly on a low temperature glass substrate is very high, and the long single is directly on the amorphous glass substrate. Crystalline films are a near-impossible method. A feasible method is to transfer a single crystal germanium film layer which has a good characteristic to a substrate, and then transfer it to any substrate such as plastic or glass. Nowadays, a method for epitaxially growing a high quality single crystal germanium film on an alumina substrate is as follows: first, an amorphous germanium film is grown on the alumina substrate as a buffer layer at a low temperature, and then the process temperature is raised to grow a normal single crystal germanium film. At the beginning of the growth of the crystal, there is a difference in the growth interface with the amorphous buffer layer. However, when the single crystal germanium film grows to a certain thickness, the differential discharge can be gradually reduced due to the stress release. Therefore, the crystal structure in the film which grows later will be close to perfect, and the difference is concentrated in the vicinity of the tantalum film and the alumina substrate interface. In order to solve the problem of the poor row, it is necessary to cause greater distortion of the block lattice in order to store the strain energy and drive the recrystallization in the subsequent high temperature annealing process. One of the methods is to implant the germanium atom into the germanium film by self-ion implantation, so that the implanted germanium atom just reaches the alumina growth interface, and the germanium film and the aluminum oxide substrate. The crystal structure at the interface is destroyed by bombardment and becomes amorphous. The aluminum oxide wafer of the tantalum film self-assembled by the ruthenium atom is then annealed at a high temperature.

If the twin film is successfully grown on an alumina substrate, the next step is the film transfer technique. The strong demand for silicon-on-insulator materials in the semiconductor industry in the 1990s has led to the development of single-crystal germanium film transfer technology. Now, there are several different ways to transfer a single crystal germanium layer from a bulk single crystal germanium wafer material to any substrate, but most of them do not conform to low cost large-scale economic benefits or are impractical. For example, one method is to build a B/Ge epitaxial etch stop layer on the germanium wafer, then bond it to the glass or plastic substrate in a wafer bonding manner, and then remove most of the germanium substrate by back etching. This method is not economical for large area coverage substrates. In the 1980s, IBM developed the use of Separation by Implantation Oxygen (SIMOX) to develop ultra-thin single-crystal germanium thin film SOI materials with oxide-insulating substrates. The oxide layer can be a very excellent etch stop layer, and the single crystal germanium film can be transferred to a glass or plastic substrate. However, the SIMOX process requires the implantation of very high doses of oxygen ions (about 5 X 10 ¹⁸ /cm ² ). However, after high temperature annealing, the defects caused by the implantation of oxygen ions in the twin film layer are not completely eliminated. In 1992, Dr. M. Bruel of France invented the "Smart Cut ® Process". The wisdom cutting method enables the formation of a known single crystal ruthenium film thickness to have excellent uniformity such as SIMOX. According to the patent scope (Claims) filed by Bruel in U.S. Patent No. 5,374,564, the process is preceded by implanting a relatively high dose (about 1 X 10 ¹⁷ /cm ² ) such as hydrogen, helium gas into an original substrate. The ions of the gas are then combined with another target substrate, and then subjected to high temperature heat treatment to polymerize the implanted hydrogen ions in the implant layer to generate a plurality of microbubbles. These microbubbles are then joined into a film of hydrogen gas to separate the film. Since the film uniformity obtained by the wisdom cutting method is very good, the defect density is small, the hydrogen gas is non-toxic and harmless after being escaped, there is no environmental pollution problem, and the original substrate material can be recovered. The above oxygen ion direct implantation method or the wisdom cutting method controls the film thickness of the single crystal germanium film by the energy of ion implantation. It is well known that the cost of production of a single crystal germanium film produced by an ion implantation method is quite high and is not in line with the cost of producing a solar cell. Moreover, the wisdom cutting method requires a heat treatment of 600 degrees Celsius in the process of film separation, and cannot be compatible with commonly used glass or plastic substrates.

In summary, in order to obtain a high-quality single crystal germanium-based film, it is often necessary to obtain a germanium wafer through slicing through a bulk single crystal twin rod obtained by pulling a single crystal growth method (such as a CZ or FZ crystal growth process). The wafer is bonded to the main substrate to be used, such as glass, and the single crystal germanium wafer is thinned by various processing techniques such as the above-described polishing and polishing, built-in etch stop layer, and smart process. In the process of grinding or etching from a thickness of hundreds of micrometers to a micron or even nanometer-thickness single crystal germanium film, more than 99% of the germanium substrate is wasted, and the final single crystal germanium film is still present. Damage caused by stress damage and uniformity of thickness of the entire substrate.

The use of a sapphire substrate as a substrate and then a nitride film is disclosed in U.S. Patent No. 4,612,479, to the use of a sapphire substrate. Next, a thin crystal structure film which is substantially close to single crystal or polycrystal is grown on the nitride film. After the surface of the tantalum crystal structure film is adhered to another substrate, a laser lift-off sapphire substrate is applied from the back surface of the sapphire, and the gallium nitride film is decomposed to separate the tantalum film and the sapphire. This method and the Cheung in the University of California, Berkeley in 2000, invented the gallium nitride and its interface on the sapphire with laser light, decomposed gallium nitride into nitrogen and gallium elements, and lifted the sapphire substrate. Separating gallium nitride and sapphire is very similar. (U.S. Patent No. 6,071,795; "Separation of Thin Films from Transparent Substrates by Selective Optical Processing," N. W. Cheung, T. D. Sands and W. S. Wong, issued June 6th, 2000). However, the lattice matching between germanium and gallium nitride is very large, and it is easy to produce poor discharge defects during the growth process. There is a gap between the above-mentioned film quality obtained by the recrystallization process to improve the crystal structure quality. And the laser light is used to decompose the gallium nitride film, which is limited by the laser beam area and output power, and the total amount of the gallium nitride film to be decomposed (so that the generated nitrogen pressure needs to be high enough) cannot be performed. Efficient large area membrane separation.

In summary, under the constraints of low temperature conditions (to avoid damage to the built-in electronic components, less than 450 Celsius The key technology for forming a single crystal twin film on glass is low temperature film transfer technology.

The invention is a method for preparing a single crystal film such as a single crystal germanium film which is grown on a high temperature resistant substrate such as an alumina substrate and can be used for low temperature film transfer, and both crystal growth and film transfer are performed in one process.

The single crystal film can also be formed into an electronic component by a general semiconductor process through the advantages of a high temperature resistant substrate, and then transferred to any other low cost or low temperature substrate.

The first step of the process of the invention is to grow a metal nitride film such as titanium nitride (TiN), aluminum nitride (AlN), indium nitride (InN) or gallium nitride (GaN) film in a single crystal structure of aluminum oxide ( On the Al ₂ O ₃ ) substrate, an amorphous layer film such as an amorphous germanium is then formed on the metal nitride as a buffer layer. At this time, the amorphous film layer has two functions: the first is the buffer layer function, providing the metal nitride film and the subsequent long crystal film, such as a single crystal germanium film, the lattice progressive buffering effect, which can greatly reduce the direct alumina The substrate grows with high-density defects caused by the thin film; the other is to provide a difference between the crystal film interface and the subsequent growth of the crystal film interface, so that the stress generated by the lattice mismatch is released, and the near-perfect single crystal is grown. The buffer layer function of the structural film. After the amorphous layer film is formed, the process temperature is raised, and the crystalline thin film layer, for example, single crystal germanium, is directly grown on the amorphous thin film layer by liquid phase epitaxy (LPE) or chemical vapor deposition (CVD). After the epitaxial growth is completed, after completing the crystal thin film structure main body, the crystal thin film structure on the alumina substrate is recrystallized by a high temperature annealing process to eliminate the difference in lattice difference between the crystal thin film structure and the alumina substrate. A low-defect crystalline crystal film layer structure is obtained. The solubility of hydrogen ions in metal nitrides is quite large. In the article " Computational studies on hydrogen storage in aluminum nitride nanowires/tubes" published by Yafei Li et al., Journal of Nanotechnology 20 215701, it is mentioned that aluminum nitride can store up to 3.66 wt% of hydrogen. Therefore, a single crystal germanium film/aluminum nitride film/alumina substrate formed according to the spirit of the present invention can be immersed in an atmospheric pressure hydrogen plasma to expose the surface of the single crystal germanium film structure on the alumina substrate to a high density. In the hydrogen ion, hydrogen ions are injected from the surface of the single crystal germanium film contacting the hydrogen ion source, and are stored in the metal aluminum nitride film layer through the single crystal germanium film structure. After forming the aluminum oxide structure of the hydrogen ion-rich aluminum nitride, it is bonded to other substrates by wafer bonding to form a wafer bonding pair. Input appropriate energy, for example, ultraviolet light with a wavelength of 350 nm to the bare side of the alumina substrate, so that hydrogen ions stored in the metal aluminum nitride previously treated by hydrogen ions are polymerized into hydrogen gas molecules, and the metal nitride film is also decomposed. Finally, the single crystal germanium film layer structure and the alumina substrate can be efficiently separated.

The hydrogen decomposition metal nitride effect is also disclosed in the Study of the Decomposition Processes of (0001) AlN in a Hydrogen Atmosphere published in the Japanese Journal of Applied Physics (Vol. 46, page L1114-L1116). Hydrogen performs an aluminum nitride metallization step to decompose the epitaxial AlN film into aluminum hydride (AlH) and ammonia molecules (NH3). In the examples, hydrogen not only decomposes the AlN film but also forms a gas pressure release film. The aluminum metal residue on the alumina is removed by an etching step and can be reused.

On the other hand, in metal nitrides, titanium nitride has the effect of blocking the diffusion of hydrogen ions. If it is the first deposited film, it can effectively block the interface of hydrogen ions between the titanium nitride and the crystal thin film layer structure, and a large amount of hydrogen ions accumulate between the titanium nitride and the twin film layer structure. In the next ultraviolet light irradiation process, the effect of the hydrogen film separating the twin film structure layer can also be produced. The titanium nitride residue on the alumina is removed by a phosphoric acid etching step and can be reused.

Referring to Figures 1 through 12, the flow of the present invention will be understood. FIG. 1 shows the formation of a crystalline thin film layer structure 109 on an alumina substrate 101. The crystal thin film layer structure 109 is grown on the amorphous thin film layer 104 by the crystalline thin film layer 102. this The amorphous thin film layer 104 has the function of a buffer layer, but grows on the lattice-mismatched metal nitride thin film layer 105. Due to the lattice distortion interaction between the metal nitride thin film layer 105 and the crystalline thin film layer 102, the formation is relatively The high density differential alignment layer 103 is between the crystalline thin film layer 102 and the amorphous thin film layer 104. This differential layer 103 will be the source of the recrystallization driving force during the subsequent recrystallization annealing process.

2 is a crystalline crystalline thin film layer 106 on the alumina substrate 101 after the recrystallization treatment process. In the third embodiment, hydrogen ions 108 are injected from a hydrogen ion source, and enter the crystalline crystal thin film layer 106 and the metal nitride thin film layer 105 via the surface 107 of the crystalline crystal thin film layer 106 to form a crystalline crystal thin film layer 1061 rich in hydrogen ions and A metal nitride 1051 film layer that interacts with hydrogen ions on the surface. Then, an arbitrary substrate 110 is bonded to the surface of the hydrogen ion-rich crystalline crystal thin film layer 1061 by wafer bonding, as shown in FIG. Figure 5 shows an energy source, such as ultraviolet light, input from the unshielded surface 111 of the back of the alumina substrate 101 to cause hydrogen ion-rich crystalline crystalline film layer 1061 and hydrogen ions of metal nitride 1051 having a surface interaction with hydrogen ions. It is released and chemically reacted to become a hydrogen gas, and the metal nitride 1051 is decomposed into a decomposition product 1052, and the hydrogen crystal-rich crystalline crystal thin film layer 1061 is also converted into a general crystalline crystal thin film layer 1062. Figure 6 shows that when the hydrogen pressure is sufficiently high, the crystalline crystalline thin film layer 1062 is separated from the alumina substrate 101 and transferred to an arbitrary substrate 110, and the metal nitride decomposition product may also be broken due to the reduced strength, leaving the decomposition product 1052 at On the alumina substrate 101.

Figure 7 is a view of forming a crystalline crystalline thin film layer 203 on the metal nitride thin film layer 202 on the alumina substrate 201 (for example, as described above). 8 is a device device thin film layer 204 after the crystal crystal thin film layer 203 is subjected to a semiconductor process such as photomask development, ion implantation, or the like, and a device is formed in the crystalline crystal thin film layer 203. Figure 9 shows the hydrogen ion implantation process. The hydrogen ion 205 enters the device device film layer 204 and the metal nitride film layer 202 via the surface 206 of the device device film layer 204, and becomes a metal nitride 2021 film layer and a hydrogen ion-rich device device that interact with hydrogen ions. Thin film layer 2041. An optional substrate 208 is then bonded in a wafer bonding manner to the surface 206 of the hydrogen-rich ion device device film layer 2041, as shown in FIG. Figure 11 shows an energy input from the back unshielded surface 207 of the alumina substrate 201 to release hydrogen ions of the hydrogen ion-rich device device thin film layer 2041 and the metal nitride 2021, chemically reacted into hydrogen gas, and decomposed metal nitride. 2021 becomes the decomposition product 2022, and the film layer 2041 rich in the hydrogen ion element device is converted into a general element device film layer 2042. Figure 12 shows that when the hydrogen pressure is sufficiently high, the element device film layer 2042 is separated from the alumina substrate 201 and transferred to an arbitrary substrate 208, and the metal nitride decomposition product may also be broken due to the reduced strength, leaving the decomposition product 2022. On the alumina substrate 201.

[Examples]

This embodiment is merely illustrative of the process, but does not limit the spirit and application of the present invention.

Embodiment 1

On a γ-cut alumina substrate, a 120 nm thick aluminum nitride film was grown by MOCVD to cover the alumina substrate. Then, a 50 nm amorphous germanium buffer layer is formed on the aluminum nitride thin film layer by PECVD at 200 ° C to 500 ° C. Next, the process temperature was raised to 950 ° C, and a 2500 nm thick (100) single crystal germanium film structure film layer body was grown on the amorphous buffer layer by liquid phase epitaxy (LPE). After completing the main body of the single crystal germanium film structure film layer, the single crystal germanium structure film layer on the alumina substrate is recovered, recrystallized, and crystallized in an argon atmosphere using a high temperature annealing process (about 950 ^to 1150 ° C). During the growth process, the difference between the crystal lattice difference between the single crystal germanium film layer structure and the alumina substrate is removed as much as possible. Through this process, a low-defect single crystal germanium structure film layer can be obtained. The surface of the single crystal germanium structure film layer is treated by atmospheric pressure hydrogen ion plasma to diffuse hydrogen ions into the aluminum nitride film layer. The surface of the single crystal germanium structure film layer and a low melting point glass containing boron ions are combined into a wafer bonded bond by anodic bonding. An ultraviolet light is incident on the interface between the aluminum nitride and the aluminum oxide substrate from the bare surface of the aluminum oxide, thereby hydrogenating hydrogen ions into hydrogen gas, decomposing the aluminum nitride thin film layer, and separating the single crystal germanium structure thin film layer and the aluminum oxide substrate Transfer to the low melting glass base plate.

Embodiment 2

On a gamma-cut alumina substrate, a gallium nitride film of about 120 nm thickness was grown by MOCVD to cover the alumina substrate. Then, a 50 nm amorphous germanium buffer layer is formed on the gallium nitride thin film layer by PECVD at 200 ° C to 500 ° C. Next, the process temperature is raised to 750 ° C ~ 1100 ° C, 5000 nm thick (100) phosphorus doped n-type single crystal germanium film structure body, liquid phase epitaxy (LPE) grows on this amorphous buffer layer . After the main body of the single crystal germanium film is completed, a high temperature annealing process (about 950 ^to 1150 ° C) is used to recover, recrystallize, and grow the crystal structure of the single crystal germanium film on the alumina substrate in an argon atmosphere. The difference between the inside of the n-type single crystal germanium film structure main body and the alumina substrate is removed. Further, through vapor phase epitaxy (VPE) on the n-type single crystal germanium film structure film layer, a boron-doped p-type single crystal germanium film layer having a length of 500 nm is used. The surface of the single crystal germanium film layer containing the PN junction structure is treated by atmospheric pressure hydrogen ion plasma to diffuse hydrogen ions into the gallium nitride film layer. The surface of the single crystal germanium film layer containing the PN junction structure and a low melting point glass containing boron ions are synthesized by anodic bonding into a bonded pair. An ultraviolet light is incident on the interface between the gallium nitride and the aluminum oxide substrate from the bare surface of the aluminum oxide, thereby polymerizing hydrogen ions into hydrogen gas, decomposing the gallium nitride thin film layer, and separating the single crystal germanium thin film layer containing the PN junction structure. Transfer to the low melting glass substrate with an alumina substrate.

Embodiment 3

On a γ-cut alumina substrate, a 120 nm thick aluminum nitride film was grown by MOCVD to cover the alumina substrate. Then, a 50 nm amorphous germanium buffer layer is formed on the aluminum nitride thin film layer by PECVD at 200 ° C to 500 ° C. Next, the process temperature was raised to 950 ° C, and a 2500 nm thick (100) single crystal germanium film structure film layer body was grown on the amorphous buffer layer by liquid phase epitaxy (LPE). After the main body of the single crystal germanium film structure film layer is completed, the single crystal germanium structure film layer on the alumina substrate is recovered, recrystallized, and grain grown in a hydrogen atmosphere using a high temperature annealing process (about 950 ^to 1150 ° C). The process removes the difference caused by the lattice difference between the single crystal germanium film layer structure and the alumina substrate. Through this process, a low-defect single crystal germanium structure film layer can be obtained. The surface of the single crystal germanium structure film layer is treated with a normal pressure hydrogen ion plasma to diffuse hydrogen ions into the aluminum nitride film layer. Then, the surface of the single crystal germanium structure film layer and a polymer substrate are bonded into a wafer bond by an adhesive bond. An ultraviolet light is incident on the interface between the aluminum nitride and the aluminum oxide substrate from the bare surface of the aluminum oxide, thereby hydrogenating hydrogen ions into hydrogen gas, decomposing the aluminum nitride thin film layer, and separating the single crystal germanium structure thin film layer and the aluminum oxide substrate Transfer to the polymer substrate.

Embodiment 4

On a γ-cut alumina substrate, a 120 nm thick aluminum nitride film was grown by MOCVD to cover the alumina substrate. Then, a 50 nm amorphous germanium buffer layer is formed on the aluminum nitride thin film layer by PECVD at 200 ° C to 500 ° C. Next, the process temperature was raised to 950 ° C, and a 5000 nm thick p-type (100) single crystal germanium film structure film layer body was grown on the amorphous buffer layer by liquid phase epitaxy (LPE). After the main body of the single crystal germanium film structure film layer is completed, a single crystal germanium structure film layer on the alumina substrate is recovered and recrystallized in a hydrogen ion-containing atmosphere using a high temperature annealing process (about 950 ^to 1150 ° C). During the grain growth process, the difference between the single crystal germanium film layer structure and the alumina substrate is removed. Through this process, a low-defect monocrystalline germanium structure thin film layer can be obtained and hydrogen ions can be stored in the aluminum nitride thin film layer. Then, the surface of the single crystal germanium structure film layer and a polymer substrate are bonded into a wafer bond by an adhesive bond. An ultraviolet light is incident on the interface between the aluminum nitride and the aluminum oxide substrate from the bare surface of the aluminum oxide, thereby hydrogenating hydrogen ions into hydrogen gas, decomposing the aluminum nitride thin film layer, and separating the single crystal germanium structure thin film layer and the aluminum oxide substrate Transfer to the polymer substrate.

Embodiment 5

On a c-cut alumina substrate, a 120 nm thick gallium nitride film was grown by MOCVD to cover the alumina substrate. Then, a 70 nm amorphous germanium buffer layer is formed on the gallium nitride thin film layer by PECVD at 200 ° C to 500 ° C. Next, the process temperature was raised to 950 ° C, and a 5000 nm thick p-type (111) single crystal germanium film structure film layer body was grown on the amorphous buffer layer by liquid phase epitaxy (LPE). After the main body of the single crystal germanium film structure film layer is completed, the single crystal germanium structure film layer on the alumina substrate is recovered, recrystallized, and grain grown in a hydrogen ion-containing atmosphere using a high temperature annealing process (1100 ° C). Process, the single crystal germanium film layer structure and The difference in lattice removal caused by the difference in lattice between the alumina substrates. Through this process, a low-defect monocrystalline germanium structure thin film layer can be obtained and hydrogen ions can be stored in the gallium nitride thin film layer. Then, the surface of the single crystal germanium structure film layer and a polymer substrate are bonded into a wafer bond by an adhesive bond. An ultraviolet pulsed laser light is incident on the interface between the gallium nitride and the aluminum oxide substrate from the bare surface of the aluminum oxide, thereby polymerizing hydrogen ions into hydrogen gas, decomposing the gallium nitride thin film layer, and separating the single crystal germanium structure thin film layer and The alumina substrate is transferred to the polymer substrate.

Embodiment 6

On a γ-cut alumina substrate, a 120 nm thick aluminum nitride film was grown by MOCVD to cover the alumina substrate. Then, a 50 nm amorphous germanium buffer layer is formed on the aluminum nitride thin film layer by PECVD at 200 ° C to 500 ° C. Next, the process temperature was raised to 950 ° C, and a 2500 nm thick (100) single crystal germanium film structure film layer body was grown on the amorphous buffer layer by liquid phase epitaxy (LPE). After the main body of the single crystal germanium film structure film layer is completed, the single crystal germanium structure film layer on the alumina substrate is recovered, recrystallized, and grain grown in a hydrogen atmosphere using a high temperature annealing process (about 950 ^to 1150 ° C). The process removes the difference caused by the lattice difference between the single crystal germanium film layer structure and the alumina substrate. Through this process, a low-defect single crystal germanium structure film layer can be obtained. The surface of the single crystal germanium structure film layer is connected to an anode (H ₂ O=2H ⁺ +1⁄2 O ₂ + 2e-) electrolytic acidic solution, and hydrogen ions are diffused into the aluminum nitride film layer by the electric field force. Then, the surface of the single crystal germanium structure film layer and a polymer substrate are bonded into a wafer bond by an adhesive bond. An ultraviolet light is incident on the interface between the aluminum nitride and the aluminum oxide substrate from the bare surface of the aluminum oxide, thereby hydrogenating hydrogen ions into hydrogen gas, decomposing the aluminum nitride thin film layer, and separating the single crystal germanium structure thin film layer and the aluminum oxide substrate Transfer to the polymer substrate.

Example 7

On a c-cut alumina substrate, a 120 nm thick aluminum nitride film was grown by MOCVD to cover the alumina substrate. Then, a 50 nm amorphous germanium buffer layer is formed on the gallium nitride thin film layer by PECVD at 200 ° C to 500 ° C. Next, the process temperature was raised to 950 ° C, and a 2500 nm thick (111) single crystal germanium film structure film layer body was grown on the amorphous buffer layer by liquid phase epitaxy (LPE). After the main body of the single crystal germanium film structure film layer is completed, the single crystal germanium structure film layer on the alumina substrate is recovered, recrystallized, and grain grown in a hydrogen atmosphere using a high temperature annealing process (about 950 ^to 1150 ° C). The process removes the difference caused by the lattice difference between the single crystal germanium film layer structure and the alumina substrate. Through this process, a low-defect single crystal germanium structure film layer can be obtained. The surface of the single crystal germanium structure film layer is immersed in an acidic solution containing a high concentration of hydrogen ions, and the hydrogen ions are diffused into the aluminum nitride film layer by heating. Then, the surface of the single crystal germanium structure film layer and a polymer substrate are bonded into a wafer bond by an adhesive bond. An ultraviolet light is incident on the interface between the aluminum nitride and the aluminum oxide substrate from the bare surface of the aluminum oxide, thereby hydrogenating hydrogen ions into hydrogen gas, decomposing the aluminum nitride thin film layer, and separating the single crystal germanium structure thin film layer and the aluminum oxide substrate Transfer to the polymer substrate.

Example eight

On a c-cut alumina substrate, a 120 nm thick aluminum nitride film was grown by MOCVD to cover the alumina substrate. Then, a 50 nm amorphous tantalum carbide buffer layer is formed on the gallium nitride thin film layer by PECVD at 200 ° C to 500 ° C. Next, the process temperature was raised to 950 ° C, and a 2500 nm thick single crystal ruthenium carbide thin film structure film layer body was grown on the amorphous buffer layer by liquid phase epitaxy (LPE). After the main body of the single crystal germanium film structure film layer is completed, the single crystal carbonized ruthenium structure film layer on the alumina substrate is recovered, recrystallized, and crystallized in a hydrogen atmosphere using a high temperature annealing process (about 950 ^to 1150 ° C). During the growth process, the difference between the lattice structure of the monocrystalline niobium carbide film layer and the alumina substrate is removed. Through this process, a low-defect monocrystalline niobium carbide structural film layer can be obtained. The surface of the monocrystalline niobium carbide structure film layer is immersed in a plasma environment containing a high concentration of hydrogen ions, and the hydrogen ions are diffused into the aluminum nitride film layer by heating. The surface of the monocrystalline niobium carbide structure film layer is bonded to a glass substrate by wafer bonding to form a wafer bond. An ultraviolet light is incident on the interface between the aluminum nitride and the aluminum oxide substrate from the bare surface of the aluminum oxide, thereby hydrogenating hydrogen ions into hydrogen gas, decomposing the aluminum nitride thin film layer, and separating the single crystal silicon carbide structure thin film layer and aluminum oxide. The substrate is transferred to the glass substrate.

Example nine

On a γ-cut alumina substrate, a 120 nm thick aluminum nitride film was grown by MOCVD to cover the alumina substrate. Then, a 50 nm amorphous germanium buffer layer is formed on the aluminum nitride thin film layer by PECVD at 200 ° C to 500 ° C. Next, the process temperature was raised to 950 ° C, and a 5000 nm thick p-type (100) single crystal germanium film structure film layer body was grown on the amorphous buffer layer by liquid phase epitaxy (LPE). After the main body of the single crystal germanium film structure film layer is completed, a single crystal germanium structure film layer on the alumina substrate is recovered and recrystallized in a hydrogen ion-containing atmosphere using a high temperature annealing process (about 950 ^to 1150 ° C). During the grain growth process, the difference between the single crystal germanium film layer structure and the alumina substrate is removed. Through this process, a low-defect monocrystalline germanium structure thin film layer can be obtained and hydrogen ions can be stored in the aluminum nitride thin film layer. The single crystal germanium structure thin film layer is further subjected to a semiconductor process to form electronic components therein. The surface of the component and the semiconductor substrate containing the component are calibrated and bonded to a wafer bond by wafer bonding. An ultraviolet light is incident on the interface between the aluminum nitride and the aluminum oxide substrate from the bare surface of the aluminum oxide, thereby polymerizing hydrogen ions into hydrogen gas, decomposing the aluminum nitride thin film layer, and separating the single crystal germanium structure film layer containing the electronic component and The alumina substrate is transferred onto the semiconductor substrate to form a three-dimensional space integrated circuit.

Example ten

On a γ-cut alumina substrate, a 120 nm thick aluminum nitride film was grown by MOCVD to cover the alumina substrate. Then, a 50 nm amorphous germanium buffer layer is formed on the aluminum nitride thin film layer by PECVD at 200 ° C to 500 ° C. Next, the process temperature was raised to 950 ° C, and a 5000 nm thick p-type (100) single crystal germanium film structure film layer body was grown on the amorphous buffer layer by liquid phase epitaxy (LPE). After the main body of the single crystal germanium film structure film layer is completed, a single crystal germanium structure film layer on the alumina substrate is recovered and recrystallized in a hydrogen ion-containing atmosphere using a high temperature annealing process (about 950 ^to 1150 ° C). During the grain growth process, the difference between the single crystal germanium film layer structure and the alumina substrate is removed. Through this process, a low-defect monocrystalline germanium structure thin film layer can be obtained and hydrogen ions can be stored in the aluminum nitride thin film layer. The single crystal germanium structure thin film layer is further subjected to a semiconductor process to form electronic components therein. The surface of the component is bonded to a flexible substrate by wafer bonding to form a wafer bond. An ultraviolet light is incident on the interface between the aluminum nitride and the aluminum oxide substrate from the bare surface of the aluminum oxide, thereby polymerizing hydrogen ions into hydrogen gas, decomposing the aluminum nitride thin film layer, and separating the single crystal germanium structure film layer containing the electronic component and The alumina substrate is transferred to the flexible substrate.

101‧‧‧Alumina substrate

102‧‧‧crystalline film layer

104‧‧‧Amorphous film layer

105‧‧‧Metal nitride film layer

106‧‧‧ Crystalline film layer

108‧‧‧ Hydrogen ion source

109‧‧‧crystal film layer structure

110‧‧‧Substrate

112‧‧‧Energy input

1062‧‧‧ Crystalline film layer

201‧‧‧Alumina substrate

202‧‧‧Metal nitride film layer

203‧‧‧ Crystalline film layer

204‧‧‧Component device film layer

205‧‧‧Hydrogen ion

208‧‧‧Substrate

209‧‧‧Energy input

2042‧‧‧Component device film layer

Other or additional objects, advantages and features of the invention will become apparent upon consideration of the appended claims The same reference numerals indicate the same elements in the structure.

The first figure is a side view of an alumina substrate used in the present invention and a film structural layer thereon.

The second drawing is a side view of the process of the present invention for recrystallizing a thin film structural layer on an alumina substrate.

The third figure is a side view of the film structure layer on which the hydrogen ions enter the alumina substrate.

The fourth drawing is a side view of the process of the present invention for bonding a thin film structural layer on an alumina substrate to another substrate.

The fifth drawing is a side view of the process of the present invention separating the alumina substrate from the film structure layer thereon.

Figure 6 is a side elevational view of the process of the present invention for transferring a thin film structural layer on an alumina substrate to another substrate.

The seventh drawing is a side view of the alumina substrate used in the present invention and the film structure layer thereon.

The eighth drawing is a side view of the process of the present invention in which the component device is placed in a thin film structural layer on an alumina substrate.

The ninth drawing is a side view of the process of the present invention for allowing hydrogen ions to enter the film structure layer of the component device on the alumina substrate.

The tenth drawing is a side view of the process of the present invention for bonding a thin film structural layer of a component device on an alumina substrate to another substrate.

The eleventh drawing is a side view of the process of the present invention for separating the alumina substrate from the film structure layer containing the component device.

Fig. 12 is a side view showing the process of the present invention for transferring a film structure layer containing a component device on an alumina substrate to another substrate.

101‧‧‧Alumina substrate

1052‧‧‧Metal nitride film layer

110‧‧‧Substrate

1062‧‧‧ Crystalline film layer

Claims (79)

A method for forming a thin film layer structure, the method comprising: forming a metal nitride thin film layer on a surface of an aluminum oxide substrate; forming at least one thin film layer structure on the metal nitride material layer; and forming the thin film layer structure Hydrogen ions are implanted into the surface; energy is input from the bare surface of the alumina substrate, so that the alumina substrate is separated from the film layer structure. The method of claim 1, wherein the metal nitride thin film layer is composed of titanium nitride. The method of claim 1, wherein the metal nitride thin film layer is composed of gallium nitride, indium nitride or aluminum nitride. The method of claim 1, wherein the film layer structure comprises a crystalline, polycrystalline or amorphous semiconductor film layer. The method of claim 1, wherein the film layer structure comprises a crystalline, polycrystalline or amorphous germanium film layer. The method of claim 1, wherein the film layer structure comprises a crystalline, polycrystalline or amorphous tantalum carbide film layer. The method of claim 1, wherein the film layer structure comprises a crystalline, polycrystalline or amorphous germanium film layer. The method of claim 1, wherein the film layer structure comprises a crystalline, polycrystalline or amorphous germanium film layer. The method of claim 1, wherein the implanting hydrogen ions are diffused by a hydrogen ion source. The method of claim 9, wherein the source of hydrogen ions is produced by hydrogen plasma. The method of claim 9, wherein the source of hydrogen ions is produced by dissociation from an acidic solution. The method of claim 9, wherein the source of hydrogen ions is produced by electrolysis in an electrolyte. The method of claim 1, wherein the implanting hydrogen ions is by ion implantation. The method of claim 1, wherein the input energy mode is by ultraviolet light irradiation, pulsed laser beam irradiation, or microwave irradiation. The method of claim 14, wherein the pulsed laser beam has a wavelength in the range of 220 ^to 400 nm. The method of claim 14, wherein the input energy mode is simultaneously input by thermal energy. The method of claim 1, wherein the exposed surface of the thin film layer structure is bonded to a random substrate surface by wafer bonding before the aluminum oxide substrate is separated from the thin film layer structure. The method of claim 17, wherein the random substrate is formed of glass or a polymer material. The method of claim 17, wherein the random substrate is formed of a semiconductor material. The method of claim 17, wherein the wafer bonding method is bonded by an adhesive medium layer. The method of claim 17, wherein the wafer bonding method is fusion bonded by a low melting glass dielectric layer. The method of claim 1, wherein the film layer structure is formed of a tantalum material. The method of claim 1, wherein the film layer structure is formed of a tantalum material. The method of claim 1, wherein the film layer structure is formed of a tantalum carbide material. The method of claim 1, wherein the film layer structure is formed of a semiconductor material. The method of claim 1, wherein the film layer structure comprises a semiconductor process forming component disposed therein. The method of claim 26, wherein the film layer is a tantalum material. The method of claim 26, wherein the component device comprises a PN junction, a MOS or a power component. A method for forming a thin film layer structure, the method comprising: forming a metal nitride thin film layer on a surface of an aluminum oxide substrate; forming at least one thin film layer structure on the metal nitride material layer; and forming the thin film layer structure Hydrogen ions are implanted into the surface; energy is input from the bare surface of the alumina substrate to form and decompose the metal nitride film, thereby separating the alumina substrate and the film layer structure. The method of claim 29, wherein the metal nitride thin film layer is composed of titanium nitride. The method of claim 29, wherein the metal nitride thin film layer is composed of gallium nitride, indium nitride or aluminum nitride. The method of claim 29, wherein the film layer structure comprises crystal, polycrystalline or amorphous Semiconductor thin film layer. The method of claim 29, wherein the film layer structure comprises a crystalline, polycrystalline or amorphous germanium film layer. The method of claim 29, wherein the film layer structure comprises a crystalline, polycrystalline or amorphous tantalum carbide film layer. The method of claim 29, wherein the film layer structure comprises a crystalline, polycrystalline or amorphous germanium film layer. The method of claim 29, wherein the film layer structure comprises a crystalline, polycrystalline or amorphous germanium film layer. The method of claim 29, wherein the implanting hydrogen ions are diffused by a hydrogen ion source. The method of claim 37, wherein the source of hydrogen ions is produced by hydrogen plasma. The method of claim 37, wherein the source of hydrogen ions is produced by dissociation from an acidic solution. The method of claim 37, wherein the source of hydrogen ions is produced by electrolysis in an electrolyte. The method of claim 29, wherein the injecting hydrogen ions is by ion implantation. The method of claim 29, wherein the input energy mode is by ultraviolet light irradiation, pulsed laser beam irradiation, or microwave irradiation. The method of claim 42, wherein the pulsed laser beam has a wavelength in the range of 220 ^to 400 nm. The method of claim 42, wherein the input energy mode is simultaneously input by thermal energy. The method of claim 29, wherein the exposed surface of the thin film layer structure is bonded to a random substrate surface by wafer bonding before the aluminum oxide substrate is separated from the thin film layer structure. The method of claim 45, wherein the random substrate is formed of glass or a polymer material. The method of claim 45, wherein the random substrate is formed of a semiconductor material. The method of claim 45, wherein the wafer bonding method is bonded by an adhesive medium layer. The method of claim 45, wherein the wafer bonding method is fusion bonded by a low melting glass dielectric layer. The method of claim 29, wherein the film layer structure is formed of a tantalum material. The method of claim 29, wherein the film layer structure is formed of a tantalum material. The method of claim 29, wherein the film layer structure is formed of a tantalum carbide material. The method of claim 29, wherein the film layer structure is formed of a semiconductor material. The method of claim 29, wherein the film layer structure comprises a semiconductor process forming component disposed therein. The method of claim 54, wherein the film layer is a bismuth material. The method of claim 54, wherein the component device comprises a PN junction, a MOS or a power component. A method for forming a structure of a twinned thin film layer, the method comprising: forming a metal nitride thin film layer on a surface of an aluminum oxide substrate; forming at least one twinned thin film layer structure on the metal nitride material layer; Hydrogen ions are implanted into the surface of the film layer; ultraviolet light is irradiated from the bare surface of the aluminum oxide substrate to form and decompose the metal nitride film, and the aluminum oxide substrate and the film layer structure are separated. The method of claim 57, wherein the metal nitride thin film layer is composed of titanium nitride. The method of claim 57, wherein the metal nitride thin film layer is composed of gallium nitride, indium nitride or aluminum nitride. The method of claim 57, wherein the crystal thin film layer structure comprises a recrystallization process. A method for forming a thin film layer structure comprising a component, the method comprising: forming a metal nitride thin film layer on a surface of an aluminum oxide substrate; forming at least one crystalline thin film layer structure on the metal nitride material layer; a component fabrication process, the device is formed in the crystal film layer structure; hydrogen ions are implanted into the surface of the film layer structure; ultraviolet light is irradiated from the bare surface of the aluminum oxide substrate to form and decompose the metal nitride film, and separate The alumina substrate and the film layer structure of the element. The method of claim 61, wherein the metal nitride thin film layer is composed of titanium nitride. The method of claim 61, wherein the metal nitride thin film layer is composed of gallium nitride, indium nitride or aluminum nitride. The method of claim 57, wherein the crystal thin film layer structure comprises recrystallization Cheng. The method of claim 57, wherein the component fabrication process comprises an ion implantation, a wet etching, and a plasma etching process. A method for forming a structure of a twinned film layer, the method comprising: forming a metal nitride film layer on a surface of an aluminum oxide substrate; forming at least one amorphous germanium film layer on the metal nitride film layer; forming A crystalline germanium film layer is deposited on the amorphous thin film layer; and the crystalline germanium thin film structural layer is formed into a single crystal germanium thin film layer structure on the metal oxide thin film by a recrystallization process. The method of claim 66, wherein the metal nitride thin film layer is composed of titanium nitride. The method of claim 66, wherein the metal nitride thin film layer is composed of gallium nitride, indium nitride or aluminum nitride. A method for forming a carbonized twin film layer structure, the method comprising: forming a metal nitride film layer on a surface of an aluminum oxide substrate; forming at least one amorphous film layer on the metal nitride film layer; forming A crystalline tantalum carbide thin film layer is formed on the amorphous thin film layer; and the thin film structural layer forms a monocrystalline niobium carbide thin film layer structure on the metal oxide thin film through a recrystallization process. The method of claim 69, wherein the metal nitride thin film layer is composed of titanium nitride. The method of claim 69, wherein the metal nitride thin film layer is composed of gallium nitride, indium nitride or aluminum nitride. The method of claim 69, wherein the crystalline tantalum carbide thin film layer structural material is composed of monocrystalline niobium carbide or polycrystalline niobium carbide. A method for forming a structure of a twinned film layer, the method comprising: forming a metal nitride film layer on a surface of an aluminum oxide substrate; forming at least one amorphous film layer on the metal nitride film layer; forming a The ruthenium film layer is structured on the amorphous film layer; the film structure layer is formed into a single crystal ruthenium film layer structure on the metal oxide film by a recrystallization process. The method of claim 73, wherein the metal nitride thin film layer is composed of titanium nitride. The method of claim 73, wherein the metal nitride thin film layer is composed of gallium nitride, indium nitride or aluminum nitride. A method for forming a semiconductor thin film layer structure, the method comprising: forming a metal nitride thin film layer on a surface of an aluminum oxide substrate; forming at least one amorphous thin film layer on the metal nitride thin film layer; forming a crystal The semiconductor thin film layer is structured on the amorphous thin film layer; and the thin film structural layer forms a single crystal semiconductor thin film layer structure on the metal oxide thin film through a recrystallization process. The method of claim 76, wherein the metal nitride thin film layer is composed of titanium nitride. The method of claim 76, wherein the metal nitride thin film layer is composed of gallium nitride, indium nitride or aluminum nitride. The method of claim 76, wherein the crystalline semiconductor thin film layer structural material is composed of a single crystal semiconductor material or a polycrystalline semiconductor material.