[go: up one dir, main page]

TWI444980B - Active matrix displaypanel and driving method thereof - Google Patents

Active matrix displaypanel and driving method thereof Download PDF

Info

Publication number
TWI444980B
TWI444980B TW100106482A TW100106482A TWI444980B TW I444980 B TWI444980 B TW I444980B TW 100106482 A TW100106482 A TW 100106482A TW 100106482 A TW100106482 A TW 100106482A TW I444980 B TWI444980 B TW I444980B
Authority
TW
Taiwan
Prior art keywords
thin film
film transistor
display panel
active matrix
matrix display
Prior art date
Application number
TW100106482A
Other languages
Chinese (zh)
Other versions
TW201236003A (en
Inventor
Yung Shun Yang
Wei Tsung Hung
Ming Hung Hsu
Original Assignee
Innolux Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innolux Corp filed Critical Innolux Corp
Priority to TW100106482A priority Critical patent/TWI444980B/en
Publication of TW201236003A publication Critical patent/TW201236003A/en
Application granted granted Critical
Publication of TWI444980B publication Critical patent/TWI444980B/en

Links

Landscapes

  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal (AREA)

Description

主動式矩陣顯示面板及其驅動方法 Active matrix display panel and driving method thereof

本發明是有關於一種主動式矩陣顯示面板及其驅動方法,且特別是有關於一種適於在低頻操作下的主動式矩陣顯示面板及其驅動方法。 The present invention relates to an active matrix display panel and a driving method thereof, and more particularly to an active matrix display panel suitable for low frequency operation and a driving method thereof.

近年來,隨著半導體科技蓬勃發展,攜帶型電子產品及平面顯示器產品也隨之興起。而在眾多平面顯示器的類型當中,液晶顯示面板(Liquid crystal panel)基於其低電壓操作、無輻射線散射、重量輕以及體積小等優點,隨即已成為顯示器產品之主流。 In recent years, with the rapid development of semiconductor technology, portable electronic products and flat panel display products have also emerged. Among the many types of flat panel displays, the liquid crystal panel has become the mainstream of display products based on its low voltage operation, no radiation scattering, light weight and small size.

針對液晶顯示面板的功率消耗的探討,驅動IC的高頻驅動和極性反轉訊號輸出則佔了很大的比例。所以,當液晶顯示面板降頻操作時,較低頻的訊號輸出可以達到節能的效果。然而,液晶顯示面板進行低頻操作時,可能會造成畫面閃爍的結果,而降頻(<60Hz)會造成畫面閃爍的主因乃是因為保持時間(holding time)過長,造成一個畫面(frame)裡液晶電壓(Vlc)透過薄膜電晶體的漏電大到使人眼可辨之亮度下降,而在下一個畫面進行充電(charging)時,亮度又會明顯提升,進而產生規律的明暗閃爍現象。 In view of the power consumption of the liquid crystal display panel, the high frequency driving and the polarity inversion signal output of the driving IC account for a large proportion. Therefore, when the liquid crystal display panel is down-converted, the lower frequency signal output can achieve the energy saving effect. However, when the liquid crystal display panel performs low frequency operation, it may cause the result of flickering of the screen, and the main cause of flickering (<60Hz) causing the flickering of the screen is because the holding time is too long, resulting in a frame. The leakage voltage of the liquid crystal voltage (Vlc) through the thin film transistor is so large that the brightness which can be discerned by the human eye is lowered, and when charging is performed on the next picture, the brightness is obviously increased, thereby generating regular brightness and dark flicker.

因此,在原有顯示器架構下,若欲同時操作高頻(60Hz)和低頻(~1Hz)驅動,將會遇到兩難的狀況。為了要能順利進行高頻的操作,可能考慮將儲存電容(Cs,storage capacitor)減小,但是這樣的設計在換成低頻操作時,將因為漏電流而有嚴重電壓變化,閃爍嚴重。而若是為了要能順利進行低頻的操作,將儲存電容加大,但在換成高頻操作時,將造成充電時間不足。因此,習知液晶顯示面板受限於薄膜電晶體的開/關比率(on/off ratio)的特性,即相同一薄膜電晶體其開啟時的電流與關閉時的電流之間的比例將受限於薄膜電晶體技術的本質,而難以在面板設計上達到很大的改變。一般而言,面板會以高頻的充電時間為考量,因此想利用低頻操作節能將造成嚴重閃爍。 Therefore, under the original display architecture, if you want to operate high frequency (60Hz) and low frequency (~1Hz) drivers at the same time, you will encounter a dilemma. In order to operate smoothly at high frequencies, it may be considered to store capacitors (Cs, storage) The capacitor) is reduced, but such a design will have a severe voltage change due to leakage current when switching to low frequency operation, and the flicker is severe. If the operation is to perform a low-frequency operation, the storage capacitor is increased, but when it is replaced with a high-frequency operation, the charging time will be insufficient. Therefore, the conventional liquid crystal display panel is limited by the on/off ratio of the thin film transistor, that is, the ratio between the current when the same thin film transistor is turned on and the current when it is turned off will be limited. Due to the nature of thin film transistor technology, it is difficult to make great changes in panel design. In general, the panel will take into account the high-frequency charging time, so it is necessary to use the low-frequency operation to save energy and cause serious flicker.

本發明提供一種主動式矩陣顯示面板及驅動方法,可供主動式矩陣顯示面板進行低頻驅動,以降低功率的消耗。 The invention provides an active matrix display panel and a driving method for low frequency driving of an active matrix display panel to reduce power consumption.

本發明提供一種主動式矩陣顯示面板及驅動方法,當主動式矩陣顯示面板進行低頻操作時,在不增加充電負荷下,可延長畫素充電時間並可降低畫面閃爍的狀況。 The invention provides an active matrix display panel and a driving method. When the active matrix display panel performs low frequency operation, the pixel charging time can be extended and the picture flickering condition can be reduced without increasing the charging load.

本發明提供一種主動式矩陣顯示面板,包括一資料線、一畫素、一第一掃描線,其中畫素包括一第一薄膜電晶體、一畫素電極及一儲存電容,第一薄膜電晶體的源極電性連接資料線,第一薄膜電晶體的第一汲極電性連接畫素電極及儲存電容。第一掃描線與資料線相交,並控制第一薄膜電晶體的開關。本發明主動式矩陣顯示面板更包括一第二薄膜電晶體、一補償電容及一第二掃描線,第二薄膜電晶體的源極電性連接第一薄膜電晶體的第一汲極,第 二薄膜電晶體的汲極電性連接補償電容,第二掃描線與該資料線相交,並控制第二薄膜電晶體的開關。 The present invention provides an active matrix display panel comprising a data line, a pixel, and a first scan line, wherein the pixel comprises a first thin film transistor, a pixel electrode and a storage capacitor, and the first thin film transistor The source is electrically connected to the data line, and the first drain of the first thin film transistor is electrically connected to the pixel electrode and the storage capacitor. The first scan line intersects the data line and controls the switching of the first thin film transistor. The active matrix display panel of the present invention further includes a second thin film transistor, a compensation capacitor and a second scan line. The source of the second thin film transistor is electrically connected to the first drain of the first thin film transistor. The second thin film transistor is electrically connected to the compensation capacitor, the second scan line intersects the data line, and controls the switching of the second thin film transistor.

在本發明之一實施例中,上述之該補償電容包括電性耦合的一補償電極與一對向補償電極,該補償電極電性連接該第二薄膜電晶體的汲極。 In an embodiment of the invention, the compensation capacitor includes a compensation electrode electrically coupled to the pair of compensation electrodes, and the compensation electrode is electrically connected to the drain of the second thin film transistor.

在本發明之一實施例中,上述之該補償電極與該對向補償電極係位於該畫素電極與該第一掃描線之間。 In an embodiment of the invention, the compensation electrode and the opposite compensation electrode are located between the pixel electrode and the first scan line.

在本發明之一實施例中,上述之該第二掃描線係位於該畫素電極與該第一掃描線之間。 In an embodiment of the invention, the second scan line is located between the pixel electrode and the first scan line.

在本發明之一實施例中,上述之該儲存電容包括電性耦合的一儲存電極及部分該畫素電極。 In an embodiment of the invention, the storage capacitor includes a storage electrode electrically coupled to the portion of the pixel electrode.

在本發明之一實施例中,上述之該第一掃描線、該第二掃描線、該對向補償電極及該儲存電極係屬於同一圖案化金屬層。 In an embodiment of the invention, the first scan line, the second scan line, the opposite compensation electrode, and the storage electrode belong to the same patterned metal layer.

在本發明之一實施例中,上述之該第一薄膜電晶體更包括一第一汲極金屬層,該第一汲極金屬層分別電性連接該畫素電極及該第二薄膜電晶體的源極。 In an embodiment of the invention, the first thin film transistor further includes a first drain metal layer, and the first drain metal layer is electrically connected to the pixel electrode and the second thin film transistor, respectively. Source.

在本發明之一實施例中,上述之該補償電極與該第一薄膜電晶體的第二汲極電性連接。 In an embodiment of the invention, the compensation electrode is electrically connected to the second drain of the first thin film transistor.

在本發明之一實施例中,上述之該補償電容包括電性耦合的一補償電極與一對向補償電極,該補償電極電性連接該第二薄膜電晶體的汲極。 In an embodiment of the invention, the compensation capacitor includes a compensation electrode electrically coupled to the pair of compensation electrodes, and the compensation electrode is electrically connected to the drain of the second thin film transistor.

在本發明之一實施例中,上述之該補償電極與該對向補償電極係位於該畫素電極與該第一掃描線之間。 In an embodiment of the invention, the compensation electrode and the opposite compensation electrode are located between the pixel electrode and the first scan line.

在本發明之一實施例中,上述之該第二掃描線係位於該畫素電極與該第一掃描線之間。 In an embodiment of the invention, the second scan line is located between the pixel electrode and the first scan line.

在本發明之一實施例中,上述之該儲存電容包括電性耦合的一儲存電極及部分該畫素電極。 In an embodiment of the invention, the storage capacitor includes a storage electrode electrically coupled to the portion of the pixel electrode.

在本發明之一實施例中,上述之該第一掃描線、該第二掃描線、該對向補償電極及該儲存電極係屬於同一圖案化金屬層。 In an embodiment of the invention, the first scan line, the second scan line, the opposite compensation electrode, and the storage electrode belong to the same patterned metal layer.

在本發明之一實施例中,上述之該第一薄膜電晶體更包括一第一汲極金屬層,該第一汲極金屬層分別電性連接該畫素電極及該第二薄膜電晶體的源極。 In an embodiment of the invention, the first thin film transistor further includes a first drain metal layer, and the first drain metal layer is electrically connected to the pixel electrode and the second thin film transistor, respectively. Source.

本發明提供一種主動式矩陣顯示面板的驅動方法,該主動式矩陣顯示面板係根據前項所述之主動式矩陣顯示面板,該主動式矩陣顯示面板的驅動方法包括對該資料線提供一資料訊號,以及對該第一掃描線提供一驅動訊號,其中當該驅動訊號的頻率大於或等於一預定值時,在充電期間打開該第一薄膜電晶體並關閉該第二薄膜電晶體;當該驅動訊號的頻率小於該預定值時,同時打開該第一薄膜電晶體及該第二薄膜電晶體。 The active matrix display panel is driven by the active matrix display panel according to the foregoing item. The driving method of the active matrix display panel includes providing a data signal to the data line. And providing a driving signal to the first scan line, wherein when the frequency of the driving signal is greater than or equal to a predetermined value, the first thin film transistor is turned on during charging and the second thin film transistor is turned off; when the driving signal is When the frequency is less than the predetermined value, the first thin film transistor and the second thin film transistor are simultaneously turned on.

在本發明之一實施例中,根據上述,當該驅動訊號的頻率小於該預定值時且在該第一薄膜電晶體充電後關閉期間,打開該第二薄膜電晶體。 In an embodiment of the invention, the second thin film transistor is turned on when the frequency of the driving signal is less than the predetermined value and during the closing of the first thin film transistor after charging according to the above.

在本發明之一實施例中,根據上述,當該驅動訊號的頻率小於該預定值時且在該第一薄膜電晶體充電後關閉期間,打開該第二薄膜電晶體的次數大於等於1。 In an embodiment of the invention, according to the above, when the frequency of the driving signal is less than the predetermined value and during the closing of the first thin film transistor after charging, the number of times the second thin film transistor is turned on is greater than or equal to 1.

在本發明之一實施例中,根據上述,當驅動訊號的頻率小於預定值時且在第一薄膜電晶體充電後關閉期間,打開第二薄膜電晶體的期間占整體充電時間的比例小於等於0.5。 In an embodiment of the present invention, according to the above, when the frequency of the driving signal is less than a predetermined value and is turned off after the charging of the first thin film transistor, the period of opening the second thin film transistor accounts for 0.5 or less of the total charging time. .

在本發明之一實施例中,根據上述,當驅動訊號的頻率小於預定值時且在第一薄膜電晶體充電後關閉期間,打開第二薄膜電晶體的頻率大於等於10Hz。 In an embodiment of the invention, according to the above, when the frequency of the driving signal is less than a predetermined value and is turned off after the charging of the first thin film transistor, the frequency of opening the second thin film transistor is greater than or equal to 10 Hz.

在本發明之一實施例中,根據上述,該預定值大於0.001赫茲(Hz)。 In an embodiment of the invention, the predetermined value is greater than 0.001 Hertz (Hz), as described above.

在本發明之一實施例中,根據上述,其畫素設計為透光式、全反射式或半穿反射式。 In an embodiment of the invention, according to the above, the pixels are designed to be light transmissive, totally reflective or semi-transflective.

在本發明之一實施例中,根據上述,主動式矩陣顯示面板更包含多個畫素結構與多個第二掃描線,各第二掃描線部分電性連接或全部電性連接。 In an embodiment of the present invention, the active matrix display panel further includes a plurality of pixel structures and a plurality of second scan lines, and each of the second scan lines is electrically connected or fully electrically connected.

本發明提供一種種主動式矩陣顯示面板,包括一資料線、一畫素、一第一掃描線及一第二掃描線。畫素包括一第一薄膜電晶體、一第二薄膜電晶體、一畫素電極以及一儲存電容,其中第一薄膜電晶體的源極電性連接資料線,第二薄膜電晶體的源極電性連接第一薄膜電晶體的汲極,畫素電極電性連接該第二薄膜電晶體的汲極,以及儲存電容電性連接該第二薄膜電晶體的汲極。第一掃描線與該資料線相交,並控制該第一薄膜電晶體的開關。第二掃描線,與該資料線相交,並控制該第二薄膜電晶體的開關。 The invention provides an active matrix display panel comprising a data line, a pixel, a first scan line and a second scan line. The pixel includes a first thin film transistor, a second thin film transistor, a pixel electrode, and a storage capacitor, wherein a source of the first thin film transistor is electrically connected to the data line, and a source of the second thin film transistor is electrically The drain of the first thin film transistor is electrically connected to the drain of the second thin film transistor, and the storage capacitor is electrically connected to the drain of the second thin film transistor. The first scan line intersects the data line and controls the switching of the first thin film transistor. a second scan line intersecting the data line and controlling a switch of the second thin film transistor.

在本發明之一實施例中,上述該儲存電容包括電性耦 合的一儲存電極及部分該畫素電極。 In an embodiment of the invention, the storage capacitor includes electrical coupling A storage electrode and a portion of the pixel electrode.

基於上述,根據本發明之主動式矩陣顯示面板及驅動方法,當顯示面板進行高頻驅動時,將第二薄膜電晶體關閉,使得補償電容不被充電而不加重功率負擔,且同時不會超出充電時間的限制,或是使得補償電容不影響畫素的電性;而當顯示面板顯示靜態畫面而以低頻進行驅動時,將第二薄膜電晶體開啟,以同時對畫素及補償電容充電,並利用補償電容補充畫素之電壓,故可在整個畫素尺寸不必增加的情況下,加大整個儲存電容的量,使保持時間拉長達到降頻的效果。因此本發明可突破薄膜電晶體本質的開/關比率(on/off ratio)的特性,同時可在高頻與低頻下操作。 Based on the above, according to the active matrix display panel and the driving method of the present invention, when the display panel performs high frequency driving, the second thin film transistor is turned off, so that the compensation capacitor is not charged without burdening the power, and at the same time does not exceed The charging time is limited, or the compensation capacitor does not affect the electrical properties of the pixel; and when the display panel displays a static picture and is driven at a low frequency, the second thin film transistor is turned on to simultaneously charge the pixel and the compensation capacitor. The compensation capacitor is used to supplement the voltage of the pixel, so that the entire storage capacitor size can be increased without increasing the size of the pixel, so that the retention time is extended to achieve the effect of frequency reduction. Therefore, the present invention can break through the on/off ratio characteristics of the thin film transistor while operating at high frequency and low frequency.

本發明之主動式矩陣顯示面板及驅動方法,係利用一額外的補償電容對畫素之漏電流進行補充及電荷共享,當主動式矩陣顯示面板進行低頻操作時,可在不增加充電負荷下,延長畫素充電時間,降低畫面閃爍的狀況。因此,本發明可供主動式矩陣顯示面板進行低頻驅動,以降低功率的消耗。 The active matrix display panel and the driving method of the invention supplement and drain the leakage current of the pixel by using an additional compensation capacitor. When the active matrix display panel performs low frequency operation, the charging load can be increased without increasing the charging load. Extend the pixel charging time and reduce the flickering of the picture. Therefore, the present invention can be used for active matrix display panels for low frequency driving to reduce power consumption.

為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.

(第一實施例) (First Embodiment)

請參考圖1,其係本發明第一實施例之一種主動式矩 陣顯示面板的電性元件佈局示意圖。本發明之主動式矩陣顯示面板100包括設置在一透明基板(圖未示)上的一資料線110、一畫素120、一第一掃描線130、一第二掃描線160以及一補償電容150,其中第一掃描線130及第二掃描線160係分別與資料線110相交地設置,畫素120可以設計為透光式、全反射式或半穿反射式。 Please refer to FIG. 1 , which is an active moment of the first embodiment of the present invention. Schematic diagram of the layout of the electrical components of the array display panel. The active matrix display panel 100 of the present invention includes a data line 110, a pixel 120, a first scan line 130, a second scan line 160, and a compensation capacitor 150 disposed on a transparent substrate (not shown). The first scan line 130 and the second scan line 160 are respectively disposed at intersection with the data line 110, and the pixel 120 can be designed to be transparent, fully reflective or semi-transparent.

畫素120包括有一第一薄膜電晶體122、一畫素電極124及一儲存電容126。其中第一薄膜電晶體122設置在第一掃描線130上方,其源極1220與資料線110電性連接,而其汲極1222則藉由一汲極金屬層1224而與畫素電極124及儲存電容126電性連接。儲存電容126係由設置在基板上的一儲存電極1260及跨置於其上的部分畫素電極124所構成。一第二薄膜電晶體140係設置在第二掃描線160上方,而第二掃描線160則設置在第一掃描線130與畫素電極124之間的基板上,故第二薄膜電晶體140的源極142便藉由汲極金屬層1224而分別與第一薄膜電晶體122的汲極1222、畫素電極124及儲存電容126電性連接。 The pixel 120 includes a first thin film transistor 122, a pixel electrode 124, and a storage capacitor 126. The first thin film transistor 122 is disposed above the first scan line 130, the source 1220 is electrically connected to the data line 110, and the drain 1222 is connected to the pixel electrode 124 by a drain metal layer 1224. The capacitor 126 is electrically connected. The storage capacitor 126 is composed of a storage electrode 1260 disposed on the substrate and a partial pixel electrode 124 disposed thereon. A second thin film transistor 140 is disposed above the second scan line 160, and a second scan line 160 is disposed on the substrate between the first scan line 130 and the pixel electrode 124, so the second thin film transistor 140 The source 142 is electrically connected to the drain 1222 of the first thin film transistor 122, the pixel electrode 124, and the storage capacitor 126 by the drain metal layer 1224.

補償電容150係由相互電性耦合的一補償電極152及位於基板上的一對向補償電極154所構成,該補償電極152及該對向補償電極154係位於畫素電極124與第一掃描線130之間。補償電極152與第二薄膜電晶體140的汲極144電性連接。從圖1中可以看出,第一掃描線130、第二掃描線160、對向補償電極154及儲存電極1260是屬於同一圖案化金屬層(即所謂metal 1)。圖2即係根據圖1之主動 式矩陣顯示面板之等效電路示意圖。 The compensation capacitor 150 is composed of a compensation electrode 152 electrically coupled to each other and a pair of compensation electrodes 154 on the substrate. The compensation electrode 152 and the opposite compensation electrode 154 are located on the pixel electrode 124 and the first scan line. Between 130. The compensation electrode 152 is electrically connected to the drain 144 of the second thin film transistor 140. As can be seen from FIG. 1, the first scan line 130, the second scan line 160, the opposite compensation electrode 154, and the storage electrode 1260 belong to the same patterned metal layer (so-called metal 1). Figure 2 is the initiative according to Figure 1. Schematic diagram of the equivalent circuit of the matrix display panel.

值得注意的是,當資料線110提供一資料訊號並且同時對第一掃描線130及第二掃描線160分別提供一驅動訊號時,此時位於第一掃描線130上方的第一薄膜電晶體122以及位於第二掃描線160上方的第二薄膜電晶體140將被開啟,使得資料線110上的資料訊號被載入畫素120及補償電容150中,並使得資料訊號的電壓對的畫素電極124、儲存電容126及補償電容150進行充電而到達一預定的電壓。上述主動式矩陣顯示面板100的電路架構的設計,是希望資料線110中的資料訊號的電壓能同時對畫素120及補償電容150進行充電。之後當時序處於第一薄膜電晶體122關閉期間,且畫素120中的電壓下降時,調節補償電容150中的電荷可以及時地對畫素120進行補充,避免電壓下降過速而造成亮度下降。 It should be noted that when the data line 110 provides a data signal and simultaneously provides a driving signal to the first scanning line 130 and the second scanning line 160, the first thin film transistor 122 located above the first scanning line 130 at this time. And the second thin film transistor 140 located above the second scan line 160 is turned on, so that the data signal on the data line 110 is loaded into the pixel 120 and the compensation capacitor 150, and the pixel electrode of the voltage pair of the data signal is made. 124. The storage capacitor 126 and the compensation capacitor 150 are charged to reach a predetermined voltage. The circuit architecture of the active matrix display panel 100 is designed such that the voltage of the data signal in the data line 110 can simultaneously charge the pixel 120 and the compensation capacitor 150. Then, when the timing is in the period in which the first thin film transistor 122 is turned off, and the voltage in the pixel 120 drops, adjusting the charge in the compensation capacitor 150 can replenish the pixel 120 in time, avoiding the voltage drop and overspeed and causing the brightness to drop.

參考圖3A,其係本發明第一實施例之主動式矩陣顯示面板在高頻驅動下,第一掃描線及第二掃描線的時序訊號示意圖。因此,當顯示面板100進行高頻驅動時(60Hz或以上),因為畫素120的電荷會很快的更新及補充,不用擔心漏電的結果,因此不必藉由補償電容150中的電荷進行補充,所以在高頻驅動狀態下,可以對第二掃描線提供一關閉電壓來關閉第二薄膜電晶體140,使得資料訊號之電壓不必對補償電容150進行充電,減少充電的負擔。 Referring to FIG. 3A, it is a timing diagram of the first scan line and the second scan line of the active matrix display panel according to the first embodiment of the present invention under high frequency driving. Therefore, when the display panel 100 is driven at a high frequency (60 Hz or more), since the charge of the pixel 120 is quickly updated and supplemented, there is no need to worry about the result of the leakage, and therefore it is not necessary to supplement the charge in the compensation capacitor 150, Therefore, in the high frequency driving state, the second scan line can be turned off to provide a turn-off voltage to turn off the second thin film transistor 140, so that the voltage of the data signal does not need to charge the compensation capacitor 150, thereby reducing the burden of charging.

參考圖3B,其係本發明第一實施例之主動式矩陣顯示面板在低頻驅動下,第一掃描線及第二掃描線的時序訊 號示意圖。但是當顯示面板100因顯示靜態畫面而欲以極低頻驅動(60Hz以下,例如是1~3Hz)以達成節能的目的時,此時在資料線110提供一資料訊號時,同時對第一掃描線130及第二掃描線160分別提供一驅動訊號,將第一薄膜電晶體122及第二薄膜電晶體140開啟,以使得資料訊號的電壓對的畫素電極124、儲存電容126及補償電容150進行充電並到達一預定的電壓。之後,第一薄膜電晶體122及第二薄膜電晶體140接著關閉。 Referring to FIG. 3B, it is a timing diagram of the first scan line and the second scan line of the active matrix display panel according to the first embodiment of the present invention under low frequency driving. No. Schematic. However, when the display panel 100 is driven by an extremely low frequency (60 Hz or less, for example, 1 to 3 Hz) to achieve energy saving, when the data line 110 provides a data signal, the first scan line is simultaneously 130 and the second scan line 160 respectively provide a driving signal to turn on the first thin film transistor 122 and the second thin film transistor 140, so that the pixel electrode 124, the storage capacitor 126 and the compensation capacitor 150 of the voltage pair of the data signal are performed. Charging and reaching a predetermined voltage. Thereafter, the first thin film transistor 122 and the second thin film transistor 140 are then turned off.

由於此時顯示面板100是以極低頻進行驅動,所以保持時間(holding time)相當的長(1-1/3秒)。因為為了避免畫素120因長時間漏電而造成亮度下降,因此在時序上第一薄膜電晶體122關閉的期間,至少一次或多次間歇性(包括週期性或非週期性)地開啟第二薄膜電晶體140,使得補償電容150所儲存的電荷可以不斷補充畫素120損失的電荷,儘量使得整個畫素120的亮度在保持時間內維持在一定的程度以上,不致衰減過快。 Since the display panel 100 is driven at an extremely low frequency at this time, the holding time is quite long (1-1/3 second). Since the brightness of the pixel 120 is reduced due to long-term leakage, the second film is opened at least once or more intermittently (including periodically or non-periodically) during the timing when the first thin film transistor 122 is turned off. The transistor 140 is such that the charge stored in the compensation capacitor 150 can continuously replenish the charge lost by the pixel 120, and the brightness of the entire pixel 120 is maintained to a certain extent or more during the holding time, so that the attenuation is not too fast.

依據上述本發明第一實施例之主動式矩陣顯示面板的設計,當顯示面板進行高頻驅動時,將第二薄膜電晶體關閉,使得補償電容不必被充電,因此不會使充電時間不足;而當顯示面板顯示靜態畫面而以低頻進行驅動時,將第二薄膜電晶體開啟,而同時對畫素及補償電容充電,在整個畫素尺寸不必增加的情況下,加大整個儲存電容的量,使保持時間拉長達到降頻的效果。因此本發明可突破薄膜電晶體本質的開/關比率(on/off ratio)的特性,而同時 可在高頻與低頻下操作。 According to the design of the active matrix display panel according to the first embodiment of the present invention, when the display panel performs high frequency driving, the second thin film transistor is turned off, so that the compensation capacitor does not have to be charged, so that the charging time is not insufficient; When the display panel displays a static picture and is driven at a low frequency, the second thin film transistor is turned on, and at the same time, the pixels and the compensation capacitor are charged, and the amount of the entire storage capacitor is increased without increasing the entire pixel size. Extend the hold time to achieve the effect of down-clocking. Therefore, the present invention can break through the on/off ratio characteristics of the thin film transistor while simultaneously It can be operated at high frequency and low frequency.

(第二實施例) (Second embodiment)

請參考圖4,其係本發明第二實施例之一種主動式矩陣顯示面板的電性元件佈局示意圖。本發明之主動式矩陣顯示面板100包括設置在一透明基板(圖未示)上的一資料線110、一畫素120、一第一掃描線130、一第二掃描線160以及一補償電容150,其中第一掃描線130及第二掃描線160係分別與資料線110相交地設置,畫素120可以設計為透光式、全反射式或半穿反射式。 Please refer to FIG. 4 , which is a schematic diagram of an electrical component layout of an active matrix display panel according to a second embodiment of the present invention. The active matrix display panel 100 of the present invention includes a data line 110, a pixel 120, a first scan line 130, a second scan line 160, and a compensation capacitor 150 disposed on a transparent substrate (not shown). The first scan line 130 and the second scan line 160 are respectively disposed at intersection with the data line 110, and the pixel 120 can be designed to be transparent, fully reflective or semi-transparent.

畫素120包括有一第一薄膜電晶體122、一畫素電極124及一儲存電容126。其中第一薄膜電晶體122設置在第一掃描線130上方,其源極1220與資料線110電性連接,而其第一汲極1222則藉由一第一汲極金屬層1224而與畫素電極124及儲存電容126電性連接。儲存電容126係由設置在基板上的一儲存電極1260及跨置於其上的部分畫素電極124所構成。一第二薄膜電晶體140係設置在第二掃描線160上方,而第二掃描線160則設置在第一掃描線130與畫素電極124之間的基板上,故第二薄膜電晶體140的源極142便藉由上述第一汲極金屬層1224而分別與第一薄膜電晶體122的第一汲極1222、畫素電極124及儲存電容126電性連接。 The pixel 120 includes a first thin film transistor 122, a pixel electrode 124, and a storage capacitor 126. The first thin film transistor 122 is disposed above the first scan line 130, the source 1220 is electrically connected to the data line 110, and the first drain 1222 is connected to the pixel by a first drain metal layer 1224. The electrode 124 and the storage capacitor 126 are electrically connected. The storage capacitor 126 is composed of a storage electrode 1260 disposed on the substrate and a partial pixel electrode 124 disposed thereon. A second thin film transistor 140 is disposed above the second scan line 160, and a second scan line 160 is disposed on the substrate between the first scan line 130 and the pixel electrode 124, so the second thin film transistor 140 The source 142 is electrically connected to the first drain 1222, the pixel electrode 124 and the storage capacitor 126 of the first thin film transistor 122 by the first drain metal layer 1224.

補償電容150係由相互電性耦合的一補償電極152及位於基板上的一對向補償電極154所構成,該補償電極152 及該對向補償電極154係位於畫素電極124與第一掃描線130之間。補償電極152的一端與第二薄膜電晶體140的汲極144電性連接,而其另一端則與第一薄膜電晶體122的第二汲極1226電性連接。從圖4中可以看出,第一掃描線130、第二掃描線160、對向補償電極154及儲存電極1260是屬於同一圖案化金屬層(即所謂metal 1)。圖5即係根據圖4之主動式矩陣顯示面板之等效電路示意圖。 The compensation capacitor 150 is composed of a compensation electrode 152 electrically coupled to each other and a pair of compensation electrodes 154 on the substrate. The compensation electrode 152 The counter compensation electrode 154 is located between the pixel electrode 124 and the first scan line 130. One end of the compensation electrode 152 is electrically connected to the drain 144 of the second thin film transistor 140, and the other end thereof is electrically connected to the second drain 1226 of the first thin film transistor 122. As can be seen from FIG. 4, the first scan line 130, the second scan line 160, the opposite compensation electrode 154, and the storage electrode 1260 belong to the same patterned metal layer (so-called metal 1). FIG. 5 is a schematic diagram of an equivalent circuit of the active matrix display panel according to FIG.

在本實施例中,由於補償電容150的補償電極152分別與第一薄膜電晶體122的第二汲極1226及第二薄膜電晶體140的汲極144進行電性連接,因此,當資料線110提供一資料訊號並且對第一掃描線130提供一驅動訊號時(開啟第一薄膜電晶體122),並不一定要對第二掃描線160另外提供一驅動訊號(開啟第二薄膜電晶體140),即可將資料線110上的資料訊號載入畫素120及補償電容150中,並使得資料訊號的電壓對的畫素電極124、儲存電容126及補償電容150,而根據薄膜電晶體的設計,使得畫素電極124、儲存電容126到達一預定的電壓,而補償電容150可以不必在充電時間內達到預定電壓。同樣的,第二薄膜電晶體140的設計,是希望在資料訊號的電壓充電後,當時序處於第一薄膜電晶體122關閉期間,且畫素120中的電壓下降時,可調節補償電容150中的電荷可以及時地對畫素120進行補充,避免電壓下降過速而造成亮度下降。而因為在本實施第二薄膜電晶體140並未擔當補償電容150充電的角色,因此第二掃描線160的線寬與加於其上 的開啟電壓訊號的負擔可經由設計適當減輕。 In this embodiment, since the compensation electrode 152 of the compensation capacitor 150 is electrically connected to the second drain 1226 of the first thin film transistor 122 and the drain 144 of the second thin film transistor 140, respectively, when the data line 110 When a data signal is provided and a driving signal is supplied to the first scanning line 130 (the first thin film transistor 122 is turned on), a driving signal is not necessarily provided to the second scanning line 160 (the second thin film transistor 140 is turned on). The data signal on the data line 110 can be loaded into the pixel 120 and the compensation capacitor 150, and the voltage of the data signal is matched to the pixel electrode 124, the storage capacitor 126 and the compensation capacitor 150, and according to the design of the thin film transistor. The pixel electrode 124 and the storage capacitor 126 reach a predetermined voltage, and the compensation capacitor 150 does not have to reach a predetermined voltage during the charging time. Similarly, the design of the second thin film transistor 140 is such that after the voltage of the data signal is charged, when the timing is in the period in which the first thin film transistor 122 is turned off, and the voltage in the pixel 120 drops, the compensation capacitor 150 can be adjusted. The charge can be added to the pixel 120 in time to avoid the voltage drop and the brightness is reduced. Because in the present embodiment, the second thin film transistor 140 does not play the role of charging the compensation capacitor 150, the line width of the second scan line 160 is added thereto. The burden of turning on the voltage signal can be appropriately reduced by design.

本實施例與第一實施例不同之處在於,在本實施例中補償電容150的補償電極152分別與第一薄膜電晶體122的第二汲極1226及第二薄膜電晶體140的汲極144進行電性連接,而在第一實施例中,補償電極152僅與第二薄膜電晶體140的汲極144進行電性連接。因此相較起來,第一實施例的補償電極152在高頻驅動時,由於第二薄膜電晶體140一直處於關閉狀態而成為浮接電極(floating),所以在不同驅動狀況下,其電位對面板品質的影響難以控制和預測。而在第二實施例中,無論顯示面板驅動於何種頻率,皆會將第一掃描線130開啟,補償電極152會被充電至一接近資料線訊號之電壓,並將視顯示品質而開啟第二掃描線160,因此第二實施例之電性控制較為穩定。 The difference between the present embodiment and the first embodiment is that the compensation electrode 152 of the compensation capacitor 150 and the second drain 1226 of the first thin film transistor 122 and the drain 144 of the second thin film transistor 140 are respectively included in this embodiment. The electrical connection is made, and in the first embodiment, the compensation electrode 152 is only electrically connected to the drain 144 of the second thin film transistor 140. Therefore, in comparison with the high-frequency driving, the compensation electrode 152 of the first embodiment is a floating electrode because the second thin film transistor 140 is always in a closed state, so that the potential is opposite to the panel under different driving conditions. The impact of quality is difficult to control and predict. In the second embodiment, regardless of the frequency at which the display panel is driven, the first scan line 130 is turned on, and the compensation electrode 152 is charged to a voltage close to the data line signal, and the display quality is turned on. The second scanning line 160 is therefore relatively stable in electrical control of the second embodiment.

參考圖6A,其係本發明第二實施例之主動式矩陣顯示面板在高頻驅動下,第一掃描線及第二掃描線的時序訊號示意圖。根據上述,當顯示面板100進行高頻驅動時(60Hz或以上),因為畫素120的電荷會很快的更新及補充,不用擔心漏電的結果,而根據薄膜電晶體的設計,使得畫素電極補償電容150可以不必在充電時間內達到預定電壓,但在高頻驅動狀態下,可以對第二掃描線提供一關閉電壓來關閉第二薄膜電晶體140,使得補償電容150中所儲存的電荷不會進入畫素120中進行充電。 Referring to FIG. 6A, it is a timing diagram of the first scan line and the second scan line of the active matrix display panel according to the second embodiment of the present invention under high frequency driving. According to the above, when the display panel 100 performs high frequency driving (60 Hz or more), since the electric charge of the pixel 120 is quickly updated and replenished, there is no fear of leakage, and the pixel electrode is designed according to the design of the thin film transistor. The compensation capacitor 150 may not need to reach a predetermined voltage during the charging time, but in the high frequency driving state, a second closing voltage may be applied to the second scan line to turn off the second thin film transistor 140, so that the charge stored in the compensation capacitor 150 is not Will enter the pixel 120 for charging.

參考圖6B,其係本發明第二實施例之主動式矩陣顯示面板在低頻驅動下,第一掃描線及第二掃描線的一種時 序訊號示意圖。當顯示面板100因顯示靜態畫面而欲以極低頻驅動(60Hz以下,例如是1~3Hz)以達成節能的目的時,此時在資料線110提供一資料訊號時,同時對第一掃描線130及第二掃描線160分別提供一驅動訊號,將第一薄膜電晶體122及第二薄膜電晶體140開啟,根據薄膜電晶體設計以使得資料訊號的電壓對的畫素電極124、儲存電容126及補償電容150進行充電並低頻驅動時到達一預定的電壓。之後,第一薄膜電晶體122及第二薄膜電晶體140接著關閉。在本發明另一實施例中,極低頻驅動的頻率例如是小於0.001Hz。 Referring to FIG. 6B, it is a time when the active matrix display panel of the second embodiment of the present invention is driven by a low frequency and the first scan line and the second scan line are Schematic diagram of the sequence signal. When the display panel 100 is driven by an extremely low frequency (60 Hz or less, for example, 1 to 3 Hz) to achieve energy saving, when the data line 110 provides a data signal, the first scan line 130 is simultaneously applied. And the second scan line 160 respectively provides a driving signal to turn on the first thin film transistor 122 and the second thin film transistor 140. According to the thin film transistor, the pixel electrode 124 and the storage capacitor 126 of the voltage pair of the data signal are designed. The compensation capacitor 150 is charged and reaches a predetermined voltage when driven at a low frequency. Thereafter, the first thin film transistor 122 and the second thin film transistor 140 are then turned off. In another embodiment of the invention, the frequency of the extreme low frequency drive is, for example, less than 0.001 Hz.

由於此時顯示面板100是以極低頻進行驅動,所以保持時間(holding time)相當的長(1-1/3秒)。因為為了避免畫素120因長時間漏電而造成亮度下降,因此在時序上第一薄膜電晶體122關閉的期間,至少一次或多次間歇性(包括週期性或非週期性)地開啟第二薄膜電晶體140,使得補償電容150中所儲存的電荷可以不斷補充畫素120損失的電荷,儘量使得整個畫素120的亮度在保持時間內維持在一定的程度以上,不致衰減過快。 Since the display panel 100 is driven at an extremely low frequency at this time, the holding time is quite long (1-1/3 second). Since the brightness of the pixel 120 is reduced due to long-term leakage, the second film is opened at least once or more intermittently (including periodically or non-periodically) during the timing when the first thin film transistor 122 is turned off. The transistor 140 is such that the charge stored in the compensation capacitor 150 can continuously replenish the charge lost by the pixel 120, and the brightness of the entire pixel 120 is maintained to a certain extent or more during the holding time, so that the attenuation is not excessively fast.

依據上述本發明第二實施例之主動式矩陣顯示面板的設計,當顯示面板進行高頻驅動時,將第二薄膜電晶體關閉,使得補償電容不影響畫素的電性;而當顯示面板顯示靜態畫面而以低頻進行驅動時,不管是將第二薄膜電晶體開啟或關閉,在訊號更新同時,皆可同時對畫素及補償電容充電,而經由在第一薄膜電晶體122的第二汲極1226 的設計,可在不影響高頻操作充電時間限制下,使得保持時間拉長達到降頻的效果。因此本發明可突破薄膜電晶體本質的開/關比率(on/off ratio)的特性,同時可在高頻與低頻下操作。 According to the design of the active matrix display panel of the second embodiment of the present invention, when the display panel performs high frequency driving, the second thin film transistor is turned off, so that the compensation capacitor does not affect the electrical properties of the pixel; and when the display panel displays When the static picture is driven at a low frequency, whether the second thin film transistor is turned on or off, the pixel and the compensation capacitor can be simultaneously charged while the signal is being updated, and the second pixel is passed through the first thin film transistor 122. Pole 1226 The design can extend the hold time to achieve the effect of frequency reduction without affecting the high-frequency operation charging time limit. Therefore, the present invention can break through the on/off ratio characteristics of the thin film transistor while operating at high frequency and low frequency.

(第三實施例) (Third embodiment)

請參考圖7,其係本發明第三實施例之一種主動式矩陣顯示面板的電性元件佈局示意圖。圖8是根據圖7之主動式矩陣顯示面板之等效電路示意圖。本發明之主動式矩陣顯示面板100包括設置在一透明基板(圖未示)上的一資料線110、一畫素120、一第一掃描線130以及一第二掃描線160,其中第一掃描線130及第二掃描線160係分別與資料線110相交地設置,畫素120可以設計為為透光式、全反射式或半穿反射式。 Please refer to FIG. 7 , which is a schematic diagram of an electrical component layout of an active matrix display panel according to a third embodiment of the present invention. FIG. 8 is a schematic diagram of an equivalent circuit of the active matrix display panel according to FIG. The active matrix display panel 100 of the present invention comprises a data line 110, a pixel 120, a first scan line 130 and a second scan line 160 disposed on a transparent substrate (not shown), wherein the first scan The line 130 and the second scan line 160 are respectively disposed to intersect the data line 110, and the pixel 120 can be designed to be a light transmissive, a total reflection type or a semi-transmissive type.

畫素120包括有一第一薄膜電晶體122、一第二薄膜電晶體140、一畫素電極124及一儲存電容126。其中第一薄膜電晶體122設置在第一掃描線130上方,其源極1220與資料線160電性連接,而其汲極1222則藉由一金屬層(未標號)而與第二薄膜電晶體140的源極142電性連接。第二薄膜電晶體140係設置在第二掃描線160上方,而第二掃描線160則設置在第一掃描線130與畫素電極124之間的基板上,第二薄膜電晶體140的汲極144藉由一金屬層(未標號)而與畫素電極124及儲存電容126電性連接。儲存電容126係由設置在基板上的一儲存電極1260及跨置於其上 與其電性耦合的部分畫素電極124所構成。 The pixel 120 includes a first thin film transistor 122, a second thin film transistor 140, a pixel electrode 124, and a storage capacitor 126. The first thin film transistor 122 is disposed above the first scan line 130, the source 1220 is electrically connected to the data line 160, and the drain 1222 is connected to the second thin film transistor by a metal layer (not labeled). The source 142 of 140 is electrically connected. The second thin film transistor 140 is disposed above the second scan line 160, and the second scan line 160 is disposed on the substrate between the first scan line 130 and the pixel electrode 124, and the drain of the second thin film transistor 140 The 144 is electrically connected to the pixel electrode 124 and the storage capacitor 126 by a metal layer (not labeled). The storage capacitor 126 is a storage electrode 1260 disposed on the substrate and spanned thereon It is composed of a partial pixel electrode 124 electrically coupled thereto.

在本實施例中,第一薄膜電晶體122與第二薄膜電晶體140串聯連接,並在通道關閉時第一掃描線130與第二掃描線160係分別操作在不同的負電壓下,由於薄膜電晶體在特定的電壓有漏電流最低的特性,因此利用第一薄膜電晶體122與第二薄膜電晶體140的串聯,可提高元件等效的開/關比率(on/off ratio)。 In this embodiment, the first thin film transistor 122 is connected in series with the second thin film transistor 140, and the first scan line 130 and the second scan line 160 are respectively operated at different negative voltages when the channel is closed, due to the film. The transistor has the lowest leakage current at a specific voltage, so that the series connection of the first thin film transistor 122 and the second thin film transistor 140 can improve the element's equivalent on/off ratio.

綜上所述,本發明之主動式矩陣顯示面板及驅動方法,係利用一額外的補償電容對畫素之漏電流進行補充及電荷共享,當主動式矩陣顯示面板進行低頻操作時,可在不增加充電負荷下,延長畫素充電時間,降低畫面閃爍的狀況。因此,本發明可供主動式矩陣顯示面板進行低頻驅動,以降低功率的消耗。 In summary, the active matrix display panel and the driving method of the present invention use an additional compensation capacitor to supplement the leakage current of the pixel and charge sharing. When the active matrix display panel performs low frequency operation, it can be Increase the charging load, extend the pixel charging time, and reduce the flickering of the picture. Therefore, the present invention can be used for active matrix display panels for low frequency driving to reduce power consumption.

再者,根據本發明根據本發明之主動式矩陣顯示面板及驅動方法,當顯示面板進行高頻驅動時,將第二薄膜電晶體關閉,使得補償電容不被充電而不加重充電負擔,或是使得補償電容不影響畫素的電性;而當顯示面板顯示靜態畫面而以低頻進行驅動時,將第二薄膜電晶體開啟,以同時對畫素及補償電容充電,並利用補償電容補充畫素之電壓,故可在整個畫素尺寸不必增加的情況下,加大整個儲存電容的量,可以拉長充電時間並降低充電時的功率負擔。 Furthermore, according to the active matrix display panel and the driving method of the present invention, when the display panel performs high frequency driving, the second thin film transistor is turned off, so that the compensation capacitor is not charged without burdening the charging, or The compensation capacitor does not affect the electrical properties of the pixel; when the display panel displays a static picture and is driven at a low frequency, the second thin film transistor is turned on to simultaneously charge the pixel and the compensation capacitor, and the pixel is supplemented by the compensation capacitor. The voltage can increase the amount of the entire storage capacitor without increasing the size of the entire pixel, which can lengthen the charging time and reduce the power load during charging.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離 本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art does not deviate. In the spirit and scope of the present invention, the scope of protection of the present invention is defined by the scope of the appended claims.

100‧‧‧主動式矩陣顯示面板 100‧‧‧Active Matrix Display Panel

110‧‧‧資料線 110‧‧‧Information line

120‧‧‧畫素 120‧‧‧ pixels

122‧‧‧第一薄膜電晶體 122‧‧‧First film transistor

1220‧‧‧第一薄膜電晶體源極 1220‧‧‧First film transistor source

1222‧‧‧第一薄膜電晶體汲極、第一薄膜電晶體第一汲極 1222‧‧‧First thin film transistor drain, first thin film transistor first drain

1224‧‧‧汲極金屬層、第一汲極層金屬層 1224‧‧‧汲metal layer, first drain metal layer

1226‧‧‧第一薄膜電晶體第二汲極 1226‧‧‧First film transistor second bungee

126‧‧‧儲存電容 126‧‧‧ Storage Capacitor

1260‧‧‧儲存電極 1260‧‧‧ Storage electrode

130‧‧‧第一掃描線 130‧‧‧First scan line

140‧‧‧第二薄膜電晶體 140‧‧‧Second thin film transistor

142‧‧‧第二薄膜電晶體源極 142‧‧‧Second thin film transistor source

144‧‧‧第二薄膜電晶體汲極 144‧‧‧Second thin film transistor bungee

150‧‧‧補償電容 150‧‧‧Compensation capacitor

152‧‧‧補償電極 152‧‧‧Compensation electrode

154‧‧‧對向補償電極 154‧‧‧ opposite compensation electrode

160‧‧‧第二掃描線 160‧‧‧Second scan line

圖1是本發明第一實施例之一種主動式矩陣顯示面板的電性元件佈局示意圖。 1 is a schematic diagram showing the layout of electrical components of an active matrix display panel according to a first embodiment of the present invention.

圖2是根據圖1之主動式矩陣顯示面板之等效電路示意圖。 2 is a schematic diagram of an equivalent circuit of the active matrix display panel according to FIG.

圖3A是本發明第一實施例之主動式矩陣顯示面板在高頻驅動下,第一掃描線及第二掃描線的時序訊號示意圖。 FIG. 3A is a timing diagram of the first scan line and the second scan line of the active matrix display panel according to the first embodiment of the present invention.

圖3B是本發明第一實施例之主動式矩陣顯示面板在低頻驅動下,第一掃描線及第二掃描線的時序訊號示意圖。 FIG. 3B is a timing diagram of the first scan line and the second scan line of the active matrix display panel according to the first embodiment of the present invention.

圖4是本發明第二實施例之一種主動式矩陣顯示面板的電性元件佈局示意圖。 4 is a schematic diagram showing the layout of electrical components of an active matrix display panel according to a second embodiment of the present invention.

圖5是根據圖4之主動式矩陣顯示面板之等效電路示意圖。 FIG. 5 is a schematic diagram of an equivalent circuit of the active matrix display panel according to FIG.

圖6A是本發明第二實施例之主動式矩陣顯示面板在高頻驅動下,第一掃描線及第二掃描線的時序訊號示意圖。 FIG. 6A is a timing diagram of the first scan line and the second scan line of the active matrix display panel according to the second embodiment of the present invention.

圖6B是本發明第二實施例之主動式矩陣顯示面板在低頻驅動下,第一掃描線及第二掃描線的一種時序訊號示意圖。 6B is a timing diagram of the first scan line and the second scan line of the active matrix display panel of the second embodiment of the present invention under low frequency driving.

圖7是本發明第三實施例之一種主動式矩陣顯示面板的電性元件佈局示意圖。 FIG. 7 is a schematic diagram showing the layout of electrical components of an active matrix display panel according to a third embodiment of the present invention.

圖8是根據圖7之主動式矩陣顯示面板之等效電路示 意圖。 8 is an equivalent circuit diagram of the active matrix display panel according to FIG. intention.

100‧‧‧主動式矩陣顯示面板 100‧‧‧Active Matrix Display Panel

110‧‧‧資料線 110‧‧‧Information line

120‧‧‧畫素 120‧‧‧ pixels

122‧‧‧第一薄膜電晶體 122‧‧‧First film transistor

1220‧‧‧第一薄膜電晶體源極 1220‧‧‧First film transistor source

1222‧‧‧第一薄膜電晶體汲極 1222‧‧‧First thin film transistor bungee

1224‧‧‧汲極金屬層 1224‧‧‧汲metal layer

126‧‧‧儲存電容 126‧‧‧ Storage Capacitor

1260‧‧‧儲存電極 1260‧‧‧ Storage electrode

130‧‧‧第一掃描線 130‧‧‧First scan line

140‧‧‧第二薄膜電晶體 140‧‧‧Second thin film transistor

142‧‧‧第二薄膜電晶體源極 142‧‧‧Second thin film transistor source

144‧‧‧第二薄膜電晶體汲極 144‧‧‧Second thin film transistor bungee

150‧‧‧補償電容 150‧‧‧Compensation capacitor

152‧‧‧補償電極 152‧‧‧Compensation electrode

154‧‧‧對向補償電極 154‧‧‧ opposite compensation electrode

160‧‧‧第二掃描線 160‧‧‧Second scan line

Claims (11)

一種主動式矩陣顯示面板,包括:一資料線;一畫素,包括:一第一薄膜電晶體,其源極電性連接該資料線;一畫素電極,電性連接該第一薄膜電晶體的第一汲極;以及一儲存電容,電性連接該第一薄膜電晶體的第一汲極,該儲存電容包括:一儲存電極;以及部分該畫素電極,部分該畫素電極與該儲存電極電性耦合;一第一掃描線,與該資料線相交,並控制該第一薄膜電晶體的開關;一第二薄膜電晶體,其源極電性連接該第一薄膜電晶體的第一汲極;一補償電容,包括:一補償電極;以及一對向補償電極,該對向補償電極與該補償電極電性耦合,該補償電極電性連接該第二薄膜電晶體的汲極,且該補償電極與該對向補償電極係位於該畫素電極與該第一掃描線之間;以及一第二掃描線,與該資料線相交,並控制該第二薄膜電晶體的開關,其中該第一掃描線、該第二掃描線、該對 向補償電極及該儲存電極係屬於同一圖案化金屬層。 An active matrix display panel includes: a data line; a pixel comprising: a first thin film transistor, the source is electrically connected to the data line; and a pixel electrode electrically connected to the first thin film transistor a first drain; and a storage capacitor electrically connected to the first drain of the first thin film transistor, the storage capacitor comprising: a storage electrode; and a portion of the pixel electrode, a portion of the pixel electrode and the storage Electrode is electrically coupled; a first scan line intersects the data line and controls a switch of the first thin film transistor; and a second thin film transistor whose source is electrically connected to the first of the first thin film transistor a compensation capacitor includes: a compensation electrode; and a pair of compensation electrodes electrically coupled to the compensation electrode, the compensation electrode being electrically connected to the drain of the second thin film transistor, and The compensation electrode and the opposite compensation electrode are located between the pixel electrode and the first scan line; and a second scan line intersects the data line, and control the switch of the second thin film transistor, wherein the the first Scanning line, the second scan line, the pair The compensation electrode and the storage electrode belong to the same patterned metal layer. 如申請專利範圍第1項所述之主動式矩陣顯示面板,其中該第一薄膜電晶體更包括一第一汲極金屬層,該第一汲極金屬層分別電性連接該畫素電極及該第二薄膜電晶體的源極。 The active matrix display panel of claim 1, wherein the first thin film transistor further comprises a first drain metal layer, wherein the first drain metal layer is electrically connected to the pixel electrode and The source of the second thin film transistor. 如申請專利範圍第1項所述之主動式矩陣顯示面板,該補償電極與該第一薄膜電晶體的第二汲極電性連接。 The active matrix display panel of claim 1, wherein the compensation electrode is electrically connected to the second drain of the first thin film transistor. 如申請專利範圍第3項所述之主動式矩陣顯示面板,其中該第一薄膜電晶體更包括一第一汲極金屬層,該第一汲極金屬層分別電性連接該畫素電極及該第二薄膜電晶體的源極。 The active matrix display panel of claim 3, wherein the first thin film transistor further comprises a first drain metal layer, wherein the first drain metal layer is electrically connected to the pixel electrode and The source of the second thin film transistor. 一種主動式矩陣顯示面板的驅動方法,該主動式矩陣顯示面板係根據申請專利範圍第1項所述,該主動式矩陣顯示面板的驅動方法包括:對該資料線提供一資料訊號;以及對該第一掃描線提供一驅動訊號,其中當該驅動訊號的頻率大於或等於一預定值時,打開該第一薄膜電晶體並關閉該第二薄膜電晶體,當驅動訊號的頻率小於該預定值時,同時打開該第一薄膜電晶體及該第二薄膜電晶體。 An active matrix display panel driving method according to the first aspect of the patent application, the driving method of the active matrix display panel includes: providing a data signal to the data line; The first scan line provides a driving signal, wherein when the frequency of the driving signal is greater than or equal to a predetermined value, the first thin film transistor is turned on and the second thin film transistor is turned off, when the frequency of the driving signal is less than the predetermined value. Opening the first thin film transistor and the second thin film transistor simultaneously. 如申請專利範圍第5項所述之主動式矩陣顯示面板的驅動方法,其中當該驅動訊號的頻率小於該預定值時且在該第一薄膜電晶體充電後關閉期間,打開該第二薄膜 電晶體。 The driving method of the active matrix display panel according to claim 5, wherein the second film is opened when the frequency of the driving signal is less than the predetermined value and during the closing of the first thin film transistor after charging Transistor. 如申請專利範圍第6項所述之主動式矩陣顯示面板的驅動方法,其中當該驅動訊號的頻率小於該預定值時且在該第一薄膜電晶體充電後關閉期間,打開該第二薄膜電晶體的次數大於等於1。 The driving method of the active matrix display panel according to claim 6, wherein the second thin film is turned on when the frequency of the driving signal is less than the predetermined value and is turned off after the first thin film transistor is charged. The number of crystals is greater than or equal to 1. 如申請專利範圍第7項所述之主動式矩陣顯示面板的驅動方法,其中當該驅動訊號的頻率小於該預定值時且在該第一薄膜電晶體充電後關閉期間,打開該第二薄膜電晶體的期間占整體充電時間的比例小於等於0.5。 The driving method of the active matrix display panel according to claim 7, wherein the second thin film is turned on when the frequency of the driving signal is less than the predetermined value and is turned off after the first thin film transistor is charged. The ratio of the period of the crystal to the total charging time is less than or equal to 0.5. 如申請專利範圍第7項所述之主動式矩陣顯示面板的驅動方法,其中當該驅動訊號的頻率小於該預定值時且在該第一薄膜電晶體充電後關閉期間,打開該第二薄膜電晶體的頻率大於等於10Hz。 The driving method of the active matrix display panel according to claim 7, wherein the second thin film is turned on when the frequency of the driving signal is less than the predetermined value and is turned off after the first thin film transistor is charged. The frequency of the crystal is greater than or equal to 10 Hz. 如申請專利範圍第9項所述之主動式矩陣顯示面板的驅動方法,其中該預定值大於0.001赫茲(Hz)。 The driving method of the active matrix display panel according to claim 9, wherein the predetermined value is greater than 0.001 Hertz (Hz). 如申請專利範圍第9項所述之主動式矩陣顯示面板的驅動方法,其中該主動式矩陣顯示面板更包含多個畫素結構與多個第二掃描線,各第二掃描線部分電性連接或全部電性連接。 The method for driving an active matrix display panel according to claim 9, wherein the active matrix display panel further comprises a plurality of pixel structures and a plurality of second scan lines, and each of the second scan lines is electrically connected. Or all electrical connections.
TW100106482A 2011-02-25 2011-02-25 Active matrix displaypanel and driving method thereof TWI444980B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100106482A TWI444980B (en) 2011-02-25 2011-02-25 Active matrix displaypanel and driving method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100106482A TWI444980B (en) 2011-02-25 2011-02-25 Active matrix displaypanel and driving method thereof

Publications (2)

Publication Number Publication Date
TW201236003A TW201236003A (en) 2012-09-01
TWI444980B true TWI444980B (en) 2014-07-11

Family

ID=47222747

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100106482A TWI444980B (en) 2011-02-25 2011-02-25 Active matrix displaypanel and driving method thereof

Country Status (1)

Country Link
TW (1) TWI444980B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10770013B2 (en) 2018-08-10 2020-09-08 Au Optronics Corporation Semiconductor substrate and driving method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10770013B2 (en) 2018-08-10 2020-09-08 Au Optronics Corporation Semiconductor substrate and driving method

Also Published As

Publication number Publication date
TW201236003A (en) 2012-09-01

Similar Documents

Publication Publication Date Title
US9659540B1 (en) GOA circuit of reducing power consumption
TWI434257B (en) Electronic apparatus system
CN106448590B (en) A kind of the GOA circuit and display device of liquid crystal display panel
WO2016192139A1 (en) Goa circuit based on oxide semiconductor thin film transistor
TWI607429B (en) Driving Method for Display Device and Related Driving Device
US9966040B2 (en) Display device and driving method thereof
JP6063989B2 (en) Transflective liquid crystal display device
GB2582458A (en) AMOLED (active matrix organic light emitting diode) panel driving circuit and driving method
CN102881247B (en) Pixel driving circuit, driving method of pixel driving circuit and display panel
US11482184B2 (en) Row drive circuit of array substrate and display device
TWI420497B (en) Power-off control circuit and liquid crystal display panel comprising the same
US20210225288A1 (en) Pixel-driving circuit and method, and a display utilizing the same
CN111243543B (en) GOA circuit, TFT substrate, display device and electronic equipment
US20110292021A1 (en) Liquid crystal display device and method of driving same
TW201126483A (en) Driving method for display panel and display apparatus
CN108877661A (en) Dot structure, driving method, pixel circuit and display panel
US11462187B2 (en) Row drive circuit of array substrate and display device
JP2011170333A (en) Method for driving liquid crystal display device
JP4115099B2 (en) Display device
JP3863729B2 (en) Display device
TWI444980B (en) Active matrix displaypanel and driving method thereof
TW201035960A (en) Method of driving a liquid crystal display device and liquid crystal display device
CN113793573B (en) GIP circuit with low power consumption and driving method thereof
US11257456B2 (en) Pixel driving circuit and display panel
JP2002091397A (en) Display device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees