TWI441275B - Substrate processing device - Google Patents
Substrate processing device Download PDFInfo
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- TWI441275B TWI441275B TW100122571A TW100122571A TWI441275B TW I441275 B TWI441275 B TW I441275B TW 100122571 A TW100122571 A TW 100122571A TW 100122571 A TW100122571 A TW 100122571A TW I441275 B TWI441275 B TW I441275B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spray Control Apparatus (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
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Description
本發明係關於一種對液晶顯示裝置(LCD，Liquid Crystal Display)用、電漿顯示器(PDP，Plasma Display Panel，電漿顯示器面板)用、有機發光二極體(OLED，Organic Light-Emitting Diode)用、場發射顯示器(FED，Field Emission Display)用、真空螢光顯示器(VFD，Vacuum Fluorescent Display)用、太陽電池板用等之玻璃基板、磁/光碟用之玻璃/陶瓷基板、半導體晶圓、電子裝置基板等各種基板噴出純水等清洗液、蝕刻液、顯影液、抗蝕剝離液等化學藥品等各種處理液而對基板進行濕式處理之基板處理裝置。The present invention relates to a liquid crystal display device (LCD), a plasma display panel (PDP, a plasma display panel), and an organic light-emitting diode (OLED). , field emission display (FED, Field Emission Display), vacuum fluorescent display (VFD, Vacuum Fluorescent Display), glass substrate for solar panels, glass/ceramic substrates for magnetic/disc, semiconductor wafers, electronics A substrate processing apparatus that wets a substrate by ejecting various processing liquids such as a cleaning liquid such as pure water, an etching liquid, a developing solution, and a resist stripping liquid on various substrates such as a device substrate.
先前該種基板處理裝置已知有如下裝置，其一面藉由沿基板之搬送方向並排設置之搬送輥等以水平姿勢或相對於水平面而向與基板搬送方向正交之方向傾斜之姿勢於濕式處理室內搬送基板，一面自噴霧噴嘴呈淋浴狀地對基板之表面噴出處理液，藉此進行特定之基板處理者。於該種基板處理裝置中，根據處理之種類而自噴霧噴嘴對基板表面噴出純水等清洗液、蝕刻液、顯影液、抗蝕剝離液等化學藥品等各種處理液。In the above-described substrate processing apparatus, a device is known which is inclined in a horizontal posture or a horizontal plane with respect to a direction perpendicular to the substrate conveyance direction by a conveyance roller or the like arranged in parallel in the conveyance direction of the substrate. When the substrate is transported in the processing chamber, the processing liquid is ejected onto the surface of the substrate from the spray nozzle in a shower state, thereby performing specific substrate processing. In the substrate processing apparatus, various processing liquids such as a cleaning liquid such as pure water, an etching liquid, a developing solution, and a chemical such as a resist stripping liquid are discharged from the surface of the substrate from the spray nozzle depending on the type of the treatment.
而且，於該種基板處理裝置中，為將處理液均勻地供給至整個基板表面，而於與基板搬送方向交叉之方向等間距且互相平行地配置複數個噴霧噴嘴，自複數個噴嘴部將處理液噴出至基板之表面，且該噴霧噴嘴包括：噴霧管部，其於沿基板搬送方向之方向延伸；及複數個噴嘴部，其沿噴霧管部之長度方向相互接近地排成一列而設置。圖5係表示自先前之基板處理裝置中之噴嘴部100對基板W之表面102噴出處理液之情況之模式圖。Further, in the substrate processing apparatus, in order to uniformly supply the processing liquid to the entire substrate surface, a plurality of spray nozzles are disposed at equal intervals in the direction intersecting the substrate transport direction, and the plurality of nozzle portions are processed from the plurality of nozzle portions. The liquid is ejected onto the surface of the substrate, and the spray nozzle includes a spray tube portion extending in a direction along the substrate transport direction, and a plurality of nozzle portions arranged in a line in the longitudinal direction of the spray tube portion. Fig. 5 is a schematic view showing a state in which the processing liquid is ejected from the nozzle unit 100 in the substrate processing apparatus of the prior art to the surface 102 of the substrate W.
如圖5所示，於該種先前之基板處理裝置噴出處理液時，沿與圖式之平面成直角方向搬送之基板W之表面102上中央部附近，與基板W之兩側端部附近相比處理液之液流變慢而導致於中央部附近產生處理液之滯留，由此噴出之新舊處理液之置換作用劣化，其結果則招致處理之不均勻化。As shown in FIG. 5, when the processing liquid is ejected by the conventional substrate processing apparatus, the vicinity of the central portion of the surface 102 of the substrate W which is transported at a right angle to the plane of the drawing is adjacent to the vicinity of the both end portions of the substrate W. The liquid flow of the treatment liquid is slower, and the retention of the treatment liquid is caused in the vicinity of the center portion, whereby the replacement action of the old and new treatment liquids discharged is deteriorated, and as a result, the treatment is uneven.
為解決上述問題而被使用一種裝置，其係藉由使噴霧噴嘴之噴霧管部以其長度方向之中心軸為中心往復旋動而使處理液之噴出方向發生變化，從而促進基板表面上之新舊處理液之置換(例如，參照專利文獻1)。In order to solve the above problems, a device is used in which the spray nozzle portion of the spray nozzle is reciprocally rotated about the central axis of the longitudinal direction to change the discharge direction of the treatment liquid, thereby promoting new surface on the substrate. Replacement of the old treatment liquid (for example, refer to Patent Document 1).
[專利文獻1]日本專利特開平10-79368號公報[Patent Document 1] Japanese Patent Laid-Open No. Hei 10-79368
圖6係表示自先前之噴霧管部往復旋動型之基板處理裝置中之噴嘴部100對基板W之表面102噴出處理液之情況之模式圖。Fig. 6 is a schematic view showing a state in which the nozzle unit 100 in the substrate processing apparatus of the reciprocating rotary type of the prior art spray tube discharges the treatment liquid onto the surface 102 of the substrate W.
於該基板處理裝置中，於與基板搬送方向交叉之方向等間距且互相平行地配置複數個噴霧噴嘴，該噴霧噴嘴包括：噴霧管部，其於沿基板搬送方向(與圖式之平面成直角之方向)之方向延伸(未圖示)；及複數個噴嘴部100，其沿噴霧管部之長度方向互相接近地排成一列而設置，一面以各噴霧管部之中心軸為中心藉由旋動機構(未圖示)使該複數個噴霧噴嘴沿圖6(a)中之箭頭符號A方向及圖6(b)中之箭頭符號B方向往復旋動，一面使來自噴嘴部100之處理液向基板之表面102之噴出方向發生變化。然而，只要反覆進行該種往復旋動，則向基板W之表面102上噴出後暫時向基板W之一側端方向流動之處理液會向反方向(另一側端方向)流動，從而於基板中央部附近與兩側端部附近處理液之滯留量不同，因此會產生處理之進行情況不均勻。In the substrate processing apparatus, a plurality of spray nozzles are disposed at equal intervals in a direction intersecting the substrate transfer direction, and the spray nozzle includes a spray tube portion that is disposed at a right angle to the plane of the substrate The direction of the direction) is extended (not shown); and the plurality of nozzle portions 100 are arranged in a line along the longitudinal direction of the spray tube portion, and are rotated around the central axis of each spray tube portion. The moving mechanism (not shown) reciprocates the plurality of spray nozzles in the direction of the arrow A in FIG. 6(a) and the direction of the arrow B in FIG. 6(b), and the processing liquid from the nozzle unit 100 is rotated. The direction in which the surface 102 of the substrate is ejected changes. However, if the reciprocating rotation is repeated, the processing liquid which is temporarily discharged toward the one side end of the substrate W after being ejected onto the surface 102 of the substrate W flows in the opposite direction (the other end direction), thereby forming the substrate. The amount of the treatment liquid remaining in the vicinity of the center portion and the end portions on both sides is different, and thus the progress of the treatment is uneven.
本發明係鑒於如上述之情況而完成者，其目的在於提供一種可防止噴出至基板表面上之處理液產生滯留而可有效地達成整個基板表面之處理均勻化之基板處理裝置。The present invention has been made in view of the above circumstances, and an object thereof is to provide a substrate processing apparatus capable of preventing a process liquid discharged onto a surface of a substrate from being retained and effectively achieving uniform processing of the entire substrate surface.
申請專利範圍第1項之發明之特徵為，以如下方式構成基板處理裝置，該基板處理裝置包括：濕式處理室，其對基板進行濕式處理；基板搬送手段，其配設於上述濕式處理室內，以水平姿勢或相對於水平面而向與基板搬送方向正交之方向傾斜之姿勢沿水平方向搬送基板；及處理液供給手段，其將處理液供給至藉由配設於上述濕式處理室內之基板搬送手段而搬送之基板之主表面。即，上述處理液供給手段包括複數個噴霧噴嘴，該複數個噴霧噴嘴於與基板搬送方向交叉之方向或沿基板搬送方向之方向等間距且互相平行地配置，且將處理液噴出至基板之主表面，各上述複數個噴霧噴嘴包括：噴霧管部，其於沿上述基板搬送方向之方向或與上述基板搬送方向交叉之方向延伸；及複數個噴嘴部，其沿該噴霧管部之長度方向互相接近地排成一列而設置，將處理液自其噴出口噴出至基板之主表面，以使上述複數個噴嘴部之噴出口相對於基板之主表面之對向角度自以水平姿勢搬送之基板之主表面之與上述基板搬送方向交叉之方向之中央部附近向兩端部附近、或者自基板之主表面沿著上述基板搬送方向之方向之中央部附近向兩端部附近而相對於鉛垂線逐漸變大之方式，或者自以傾斜之姿勢搬送之基板之主表面之傾斜上端部附近向傾斜下端部附近而相對於基板之主表面之法線逐漸變大之方式，將上述複數個噴嘴部設置於上述複數個噴霧管部，藉此積極地於基板之主表面上產生噴出後之處理液之液體流動。The invention of claim 1 is characterized in that the substrate processing apparatus includes a wet processing chamber that wet-processes the substrate, and a substrate transfer means that is disposed in the wet type In the processing chamber, the substrate is conveyed in a horizontal direction or in a posture inclined with respect to a horizontal plane in a direction orthogonal to the substrate conveying direction; and the processing liquid supply means supplies the processing liquid to the wet processing The main surface of the substrate that is transported by the substrate transfer means in the room. In other words, the processing liquid supply means includes a plurality of spray nozzles that are disposed in parallel with each other in a direction intersecting the substrate transport direction or in a direction along the substrate transport direction, and discharge the processing liquid to the main substrate. Each of the plurality of spray nozzles includes: a spray tube portion extending in a direction crossing the substrate transport direction or intersecting the substrate transport direction; and a plurality of nozzle portions along the length direction of the spray tube portion Arranged in close proximity to each other, the processing liquid is ejected from the ejection port to the main surface of the substrate, so that the ejection angle of the ejection openings of the plurality of nozzle portions with respect to the main surface of the substrate is transferred from the substrate in a horizontal posture The vicinity of the central portion in the direction in which the main surface intersects the substrate transport direction is gradually formed in the vicinity of both end portions or in the vicinity of the center portion in the direction from the main surface of the substrate along the substrate transport direction to the vicinity of both end portions with respect to the vertical line. The way to become larger, or to tilt the lower end near the inclined upper end of the main surface of the substrate conveyed in an inclined posture In the vicinity of the main surface of the substrate, the plurality of nozzle portions are provided on the plurality of spray tube portions so as to gradually generate a liquid of the treatment liquid after ejection on the main surface of the substrate. flow.
申請專利範圍第2項之發明係如申請專利範圍第1項之基板處理裝置，其中於與基板搬送方向交叉之方向等間距地配置之上述複數個噴霧噴嘴之上述複數個噴嘴部於該交叉方向呈交錯狀配置。The substrate processing apparatus according to claim 1, wherein the plurality of nozzle portions of the plurality of spray nozzles arranged at equal intervals in a direction intersecting the substrate transport direction are in the intersecting direction Staggered configuration.
申請專利範圍第3項之發明係如申請專利範圍第1項之基板處理裝置，其中於沿基板搬送方向之方向等間距地配置之上述複數個噴霧噴嘴之上述複數個噴嘴部於沿該基板搬送方向之方向呈交錯狀配置。The substrate processing apparatus according to claim 1, wherein the plurality of nozzle portions of the plurality of spray nozzles disposed at equal intervals in a direction of the substrate transport direction are transported along the substrate The direction of the direction is staggered.
申請專利範圍第4項之發明係如申請專利範圍第1項之基板處理裝置，其中自上述複數個噴嘴部之噴出口所噴出之處理液之噴出量相等。The invention of claim 4 is the substrate processing apparatus according to the first aspect of the invention, wherein the discharge amount of the treatment liquid discharged from the discharge ports of the plurality of nozzle portions is equal.
申請專利範圍第5項之發明係如申請專利範圍第1至4項中任一項之基板處理裝置，其中自上述複數個噴嘴部之噴出口所噴出之處理液為蝕刻液。The substrate processing apparatus according to any one of claims 1 to 4, wherein the processing liquid discharged from the ejection openings of the plurality of nozzle portions is an etching liquid.
於申請專利範圍第1項之發明之基板處理裝置中，以使複數個噴嘴部之噴出口相對於基板之主表面之對向角度自以水平姿勢搬送之基板的主表面與基板搬送方向交叉之方向的中央部附近向兩端部附近、或者自基板之主表面之沿基板搬送方向之方向的中央部附近向兩端部附近，相對於鉛垂線逐漸變大之方式，或者自以傾斜之姿勢搬送之基板的主表面之傾斜上端部附近向傾斜下端部附近，相對於基板之主表面之法線逐漸變大之方式，將複數個噴嘴部設置於複數個噴霧管部。因此，其可積極地於基板之主表面上產生噴出後之處理液之液體流動，而可防止處理液產生滯留且在遍及基板之整個主表面達成均勻之濕式處理。In the substrate processing apparatus of the invention of the first aspect of the invention, the main surface of the substrate conveyed in a horizontal posture and the substrate conveyance direction are intersected by the opposite angles of the discharge ports of the plurality of nozzle portions with respect to the main surface of the substrate. The vicinity of the central portion of the direction is gradually increased in the vicinity of both end portions or in the vicinity of the center portion in the direction in which the substrate is conveyed from the main surface of the substrate, or is gradually inclined with respect to the vertical line. The plurality of nozzle portions are provided in the plurality of spray tube portions so that the vicinity of the inclined upper end portion of the main surface of the substrate to be transported is gradually increased toward the vicinity of the inclined lower end portion with respect to the normal surface of the main surface of the substrate. Therefore, it is possible to actively generate a liquid flow of the treatment liquid after ejection on the main surface of the substrate, and it is possible to prevent the treatment liquid from being retained and to achieve uniform wet treatment throughout the entire main surface of the substrate.
於申請專利範圍第2及3項之發明之基板處理裝置中，於與基板搬送方向交叉之方向等間距地配置之複數個噴霧噴嘴的複數個噴嘴部於該交叉方向呈交錯狀配置，於沿基板搬送方向之方向等間距地配置之複數個噴霧噴嘴的複數個噴嘴部於沿該基板搬送方向之方向呈交錯狀配置。因此，其可減少來自各噴嘴部之處理液噴出流之互相干擾，藉此，可更有效地防止基板表面上之噴出處理液產生滯留而積極地促進處理液產生液體流動。In the substrate processing apparatus according to the inventions of the second and third aspects of the invention, the plurality of nozzle portions of the plurality of spray nozzles arranged at equal intervals in the direction intersecting the substrate transport direction are arranged in a staggered manner in the intersecting direction. The plurality of nozzle portions of the plurality of spray nozzles arranged at equal intervals in the direction in which the substrate is conveyed are arranged in a staggered manner in the direction in which the substrate is conveyed. Therefore, it is possible to reduce the mutual interference of the treatment liquid discharge streams from the respective nozzle portions, thereby more effectively preventing the discharge of the discharge treatment liquid on the surface of the substrate and actively promoting the liquid flow of the treatment liquid.
於申請專利範圍第4項之發明之基板處理裝置中，無需用以調節來自各噴嘴部之噴出量以使噴出後處理液不產生滯留之煩瑣之機構等，藉此可謀求設計成本之低廉化。In the substrate processing apparatus of the invention of the fourth aspect of the invention, there is no need for a mechanism for adjusting the discharge amount from each nozzle portion so that the post-discharge processing liquid does not become stagnant, whereby the design cost can be reduced. .
於申請專利範圍第5項之發明之基板處理裝置中，因所噴出之蝕刻液之滯留而引起產生滯留部位與非產生滯留部位之蝕刻進度不同，從而引起蝕刻處理不均勻化，藉此，可有效地阻止產生圖案短路(pattern short)(配線殘留)或圖案形狀之不勻(mura)之問題。In the substrate processing apparatus according to the fifth aspect of the invention, the etching progress of the generated etching liquid and the non-storing portion are different due to the retention of the ejected liquid, and the etching process is uneven. The problem of pattern short (wiring residue) or pattern shape unevenness (mura) is effectively prevented.
以下，一面參照圖式一面對本發明之實施形態進行說明。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
圖1係模式性地表示本發明之第1實施形態之基板處理裝置1者。Fig. 1 is a view schematically showing a substrate processing apparatus 1 according to a first embodiment of the present invention.
該基板處理裝置1包含：化學藥品處理室10，其噴出蝕刻液、顯影液、抗蝕剝離液等化學藥品而對基板W進行化學藥品處理；複數個搬送輥(未圖示)，其於化學藥品處理室10內一面以水平姿勢支撐基板W一面於水平方向X往復移動；化學藥品儲槽12，其貯存化學藥品；複數個噴霧噴嘴14，其用以將化學藥品噴出至基板W之表面102；送液泵16；及化學藥品供給路18，其將化學藥品儲槽12中貯存之化學藥品輸送至噴霧噴嘴14。The substrate processing apparatus 1 includes a chemical processing chamber 10 that discharges chemicals such as an etching solution, a developing solution, and a resist stripping liquid to chemically treat the substrate W, and a plurality of transfer rollers (not shown) for chemical The drug processing chamber 10 supports the substrate W in a horizontal posture while reciprocating in the horizontal direction X; the chemical storage tank 12 stores chemicals; and a plurality of spray nozzles 14 for ejecting chemicals to the surface 102 of the substrate W. a liquid supply pump 16 and a chemical supply path 18 for delivering the chemical stored in the chemical storage tank 12 to the spray nozzle 14.
噴霧噴嘴14係於與基板搬送方向交叉之方向等間距地且互相平行地於化學藥品處理室10內配設有複數個，各噴霧噴嘴14包括：噴霧管部22(參照圖2)，其於沿基板搬送方向之方向延伸；及複數個噴嘴部24，其於該噴霧管部22之長度方向互相接近地排成一列而設置，其將化學藥品自其噴出口26(參照圖2(b))噴出至基板W之表面102。又，於化學藥品處理室10之底部設置有用以將流下至化學藥品處理室10內底部已使用之化學藥品排出之循環排水路20，循環排水路20與化學藥品儲槽12連通連接。The spray nozzles 14 are disposed in the chemical processing chamber 10 at equal intervals in the direction intersecting the substrate transport direction, and each spray nozzle 14 includes a spray tube portion 22 (see FIG. 2). a plurality of nozzle portions 24 are arranged in a line in the longitudinal direction of the spray tube portion 22, and the chemical is supplied from the discharge port 26 (refer to FIG. 2(b) ) is ejected to the surface 102 of the substrate W. Further, a circulating drain passage 20 for discharging the chemical which has been discharged to the bottom of the chemical processing chamber 10 is provided at the bottom of the chemical processing chamber 10, and the circulating drain passage 20 is connected to the chemical storage tank 12.
於包含上述結構之基板處理裝置1中，首先，一面藉由搬送輥以水平姿勢支撐自化學藥品處理室10之基板搬入口(未圖示)搬入至化學藥品處理室10內之基板W，並且使該基板W於水平方向往復移動，一面藉由送液泵16之驅動而將化學藥品儲槽12中貯存之化學藥品經由化學藥品供給路18輸送至噴霧噴嘴14，分別自噴霧噴嘴14之各噴嘴部24將等量之化學藥品噴出至基板W之表面102，藉此進行化學藥品處理。In the substrate processing apparatus 1 including the above-described configuration, first, the substrate W loaded into the chemical processing chamber 10 from the substrate transfer port (not shown) of the chemical processing chamber 10 is supported by the transfer roller in a horizontal posture, and The substrate W is reciprocated in the horizontal direction, and the chemical stored in the chemical storage tank 12 is transported to the spray nozzle 14 via the chemical supply path 18 by the driving of the liquid feeding pump 16, respectively, from the respective spray nozzles 14 The nozzle portion 24 discharges an equal amount of chemicals onto the surface 102 of the substrate W, thereby performing chemical treatment.
化學藥品處理結束之基板W係藉由搬送輥自化學藥品處理室10之基板搬出口(未圖示)搬出。自基板W表面102流下進而流下至化學藥品處理室10內底部之化學藥品經由循環排水路20而回收至化學藥品儲槽12中。The substrate W after the chemical treatment is completed is carried out from the substrate transfer port (not shown) of the chemical processing chamber 10 by a transfer roller. The chemical flowing down from the surface 102 of the substrate W and flowing down to the bottom of the chemical processing chamber 10 is recovered into the chemical storage tank 12 via the circulating drainage path 20.
圖2係用以說明設置於構成噴霧噴嘴14之噴霧管部22的噴嘴部24之噴出口26相對於基板W表面102之對向角度之模式圖，圖2(a)係其俯視圖，圖2(b)係其剖面圖。2 is a schematic view for explaining the angle of the discharge port 26 of the nozzle portion 24 of the spray tube portion 22 constituting the spray nozzle 14 with respect to the surface 102 of the substrate W, and FIG. 2(a) is a plan view thereof, FIG. (b) is a sectional view thereof.
如圖2(a)及圖2(b)所示，複數個，於本實施形態中為6個之噴霧噴嘴14a～14f於與基板搬送方向X交叉之方向等間距地且互相平行地配設。噴霧噴嘴14a～14f分別包括：噴霧管部22a～22f，其於沿基板搬送方向之方向延伸；及複數個噴嘴部24，其於各噴霧管部22a～22f之長度方向互相接近地排成一列而設置。As shown in Fig. 2 (a) and Fig. 2 (b), in the present embodiment, six spray nozzles 14a to 14f are disposed at equal intervals in the direction intersecting the substrate transport direction X and are arranged in parallel with each other. . Each of the spray nozzles 14a to 14f includes spray tube portions 22a to 22f extending in the direction in which the substrate is conveyed, and a plurality of nozzle portions 24 arranged in a line in the longitudinal direction of each of the spray tube portions 22a to 22f. And set.
並且，相對於基板W之表面102使複數個噴嘴部24之噴出口26之對向角度，自以水平姿勢搬送之基板W表面102與基板搬送方向X交叉之方向自中央部附近向兩端部附近而相對於鉛垂線逐漸變大之方式，將噴嘴部24設置於各噴霧管部22a～22f，進而該等噴嘴部24，如圖2(a)所示，於與基板搬送方向X交叉之方向呈交錯狀配置。Further, the opposing angle of the discharge port 26 of the plurality of nozzle portions 24 with respect to the surface 102 of the substrate W is from the vicinity of the center portion to both end portions in the direction in which the surface W of the substrate W conveyed in the horizontal posture intersects the substrate transport direction X. The nozzle portion 24 is provided in each of the spray tube portions 22a to 22f so as to gradually increase in the vicinity of the vertical line, and the nozzle portions 24 are intersected with the substrate transport direction X as shown in Fig. 2(a). The directions are staggered.
圖2圖(b)係例示藉由噴嘴部24中設置於噴霧管部22a～22f之基板搬送方向X大致中央部之噴嘴部24a～24f而形成之噴嘴部群之一組，於與基板搬送方向X交叉方向之中央部附近相對向之噴嘴部24c及24d之噴出口26c及26d中，將相對於鉛垂線之角度設定為0°，而於兩端部附近相對向之噴嘴部24a、24f之噴出口26a、26f中，將該角度設定為30°～60°。藉由其他噴嘴部群而形成之組之噴出口相對於基板W的表面102之對向角度亦同樣地以自與基板搬送方向X交叉方向之中央部附近向兩端部附近相對於鉛垂線逐漸變大之方式而設定。FIG. 2(b) shows a group of nozzle groups formed by the nozzle portions 24a to 24f provided in the substantially central portion of the substrate transport direction X of the spray tube portions 22a to 22f in the nozzle portion 24, and is transported to the substrate. In the discharge ports 26c and 26d of the nozzle portions 24c and 24d in the vicinity of the center portion in the direction X intersecting direction, the angle with respect to the vertical line is set to 0°, and the nozzle portions 24a and 24f are opposed to each other in the vicinity of both end portions. In the discharge ports 26a and 26f, the angle is set to 30 to 60. Similarly, the angle of the discharge of the group of the nozzles formed by the other nozzle groups with respect to the surface 102 of the substrate W is gradually increased from the vicinity of the central portion in the direction intersecting the substrate transport direction X to the vicinity of the both ends. Set by increasing the size.
於以上述方式構成之噴霧噴嘴14a～14f中，自設置於靜止狀態之(無往復旋動)噴霧管部22a～22f之噴嘴部24之各自之對向角度固定之噴出口26向基板W之表面102噴出相同噴出量之化學藥品，藉此，可於基板W之表面102上，自與基板搬送方向X交叉方向之基板之中央部向兩端部，積極地產生以箭頭符號Y所示之噴出後之化學藥品之液體流動，而可防止化學藥品產生滯留，且不必調節來自各噴嘴部24之噴出量即可遍及基板W之整個表面102達成均勻之化學藥品處理。如此，可防止使等量之化學藥品直接自各噴嘴部24噴出而於噴出後產生化學藥品處理液之滯留，因此，無需以防止產生該種滯留為目的而用以調節來自各噴嘴部24之化學藥品噴出量之煩瑣之機構等，藉此可謀求設計成本之低廉化。又，例如於使用蝕刻液作為化學藥品進行鋁蝕刻處理之情形時，因所噴出之蝕刻液之滯留而出現產生滯留部位與非產生滯留部位之蝕刻進度之不同，從而使得蝕刻處理不均勻化，藉此，則可有效地阻止產生圖案短路(配線殘留)或圖案形狀之不勻之問題。In the spray nozzles 14a to 14f configured as described above, the discharge ports 26 having the opposite angles of the nozzle portions 24 provided in the stationary state (without reciprocating rotation) of the spray tube portions 22a to 22f are fixed to the substrate W. The surface 102 discharges the chemical of the same discharge amount, whereby the surface of the substrate W can be positively generated by the arrow Y from the central portion of the substrate in the direction intersecting the substrate transport direction X. The liquid of the chemical after the ejection flows, and the retention of the chemical can be prevented, and uniform chemical treatment can be achieved over the entire surface 102 of the substrate W without adjusting the discharge amount from each nozzle portion 24. In this way, it is possible to prevent the chemical from being discharged from the respective nozzle portions 24 and to cause the retention of the chemical treatment liquid after the discharge. Therefore, it is not necessary to adjust the chemistry from each nozzle portion 24 for the purpose of preventing the occurrence of such retention. It is possible to reduce the design cost by using a troublesome mechanism for discharging the medicine. Further, for example, when an etching treatment is performed using an etching solution as a chemical, the etching process is not uniform, and the etching progress of the generated portion and the non-generated portion is different due to the retention of the discharged etching liquid, so that the etching process is not uniform. Thereby, the problem of occurrence of pattern short-circuit (residual wiring) or unevenness in pattern shape can be effectively prevented.
又，由於噴嘴部24係於與基板搬送方向X交叉之方向呈交錯狀配置，故而可減少來自各噴嘴部24之化學藥品噴出流之互相干擾，藉此，可更有效地防止基板表面102上之噴出化學藥品產生滯留而積極地促進化學藥品產生液體流動。Further, since the nozzle portions 24 are arranged in a staggered manner in the direction intersecting the substrate transport direction X, mutual interference with the chemical discharge flows from the nozzle portions 24 can be reduced, whereby the substrate surface 102 can be more effectively prevented. The squirting chemicals cause retention and actively promote the flow of liquid from the chemical.
其次，對本發明之第2實施形態之基板處理裝置進行說明。Next, a substrate processing apparatus according to a second embodiment of the present invention will be described.
圖3係用以說明本發明之第2實施形態之基板處理裝置中相對於基板W之表面102設置於噴霧噴嘴14'之噴霧管部22'之噴嘴部24'的噴出口26'之對向角度之模式圖，圖3(a)係其俯視圖，圖3(b)係其剖面圖。3 is a view for explaining the direction of the discharge port 26' of the nozzle portion 24' of the spray tube portion 22' of the spray nozzle 14' with respect to the surface 102 of the substrate W in the substrate processing apparatus according to the second embodiment of the present invention. Fig. 3(a) is a plan view of the angle, and Fig. 3(b) is a cross-sectional view thereof.
於第2實施形態中，噴霧噴嘴14'係於沿基板搬送方向之方向等間距且互相平行地於化學藥品處理室10內配設有複數個，各噴霧噴嘴14'包括：噴霧管部22'，其於與基板搬送方向交叉之方向延伸；及複數個噴嘴部24'，其於該噴霧管部22'之長度方向互相接近地排成一列而設置，其將化學藥品自其噴出口26'噴出至基板W之表面102。In the second embodiment, the spray nozzles 14' are disposed in the chemical processing chamber 10 at equal intervals in the direction in which the substrate is conveyed, and each spray nozzle 14' includes a spray tube portion 22'. And extending in a direction intersecting the substrate transport direction; and a plurality of nozzle portions 24' are disposed in a line in the longitudinal direction of the spray tube portion 22', and the chemical is discharged from the discharge port 26' It is ejected to the surface 102 of the substrate W.
如圖3(a)及圖3(b)所示，與第1實施形態相同，6個噴霧噴嘴14a'～14f'於沿基板搬送方向X之方向等間距且互相平行地配設。噴霧噴嘴14'a～14f'分別包括：噴霧管部22a'～22f'，其於與基板搬送方向交叉之方向延伸；及複數個噴嘴部24'，其於各噴霧管部22a'～22f'之長度方向互相接近地排成一列而設置。As shown in Fig. 3 (a) and Fig. 3 (b), in the same manner as in the first embodiment, the six spray nozzles 14a' to 14f' are disposed at equal intervals in the direction of the substrate transport direction X and are arranged in parallel with each other. The spray nozzles 14'a to 14f' respectively include spray tube portions 22a' to 22f' extending in a direction crossing the substrate transport direction, and a plurality of nozzle portions 24' for the respective spray tube portions 22a' to 22f' The length directions are arranged in a line close to each other.
而且，相對於基板W之表面102以使複數個噴嘴部24'之噴出口26'之對向角度自以水平姿勢搬送之基板W表面102之沿基板搬送方向X方向之中央部附近向兩端部附近而相對於鉛垂線逐漸變大之方式，將噴嘴部24'設置於各噴霧噴嘴14a'～14f'，進而，該等噴嘴部24'，如圖3(a)所示於沿基板搬送方向X之方向呈交錯狀配置。Further, with respect to the surface 102 of the substrate W, the opposite direction of the discharge port 26' of the plurality of nozzle portions 24' is transferred from the vicinity of the center portion of the substrate W surface 102 in the horizontal direction of the substrate transport direction X direction The nozzle portion 24' is provided in each of the spray nozzles 14a' to 14f' so as to gradually increase in the vicinity of the portion with respect to the vertical line, and the nozzle portions 24' are transported along the substrate as shown in Fig. 3(a). The direction of the direction X is staggered.
圖3(b)係例示藉由噴嘴部24'中設置於噴霧管部22a'～22f'與基板搬送方向X交叉方向之大致中央部的噴嘴部24a'～24f'而形成之噴嘴部群之1組，於沿基板搬送方向X方向之中央部附近相對向的噴嘴部24c'及24d'之噴出口26c'及26d'中，將相對於鉛垂線之角度設定為0°，而於兩端部附近相對向之噴嘴部24a'、24f'之噴出口26a'、26f'中，將該角度設定為30°～60°。藉由其他噴嘴部群而形成之組之噴出口的對向角度亦同樣地以自沿基板搬送方向X之方向之中央部附近向兩端部附近相對於鉛垂線逐漸變大之方式而設定。FIG. 3(b) shows a nozzle unit group formed by the nozzle portions 24a' to 24f' provided at the substantially central portion in the direction in which the spray tube portions 22a' to 22f' intersect with the substrate conveyance direction X in the nozzle portion 24'. In one set, in the discharge ports 26c' and 26d' of the nozzle portions 24c' and 24d' which are opposed to each other in the vicinity of the center portion in the substrate transport direction X direction, the angle with respect to the vertical line is set to 0° at both ends. In the discharge ports 26a' and 26f' of the nozzle portions 24a' and 24f' which are opposed to the vicinity of the portion, the angle is set to 30 to 60. Similarly, the opposing angle of the discharge port of the group formed by the other nozzle unit group is set so as to gradually increase from the vicinity of the center portion in the direction along the substrate transport direction X to the vicinity of the both end portions with respect to the vertical line.
於以上述方式構成之噴霧噴嘴14a'～14f'中，自設置於靜止狀態(無往復旋動)之噴霧管部22a～22f'之噴嘴部24'的各個之對向角度固定之噴出口26'向基板W表面102噴出相同噴出量之化學藥品，藉此，可於基板W之表面102上自沿基板搬送方向X之方向之基板中央部向兩端部，積極地產生以箭頭符號X'所示之噴出後化學藥品之液體流動，而可有效地防止化學藥品產生滯留，且不用調節來自各噴嘴部24'之噴出量即可遍及基板W之整個表面102而達成均勻之化學藥品處理。In the spray nozzles 14a' to 14f' configured as described above, the discharge ports 26 of the nozzle portions 24' of the spray tube portions 22a to 22f' which are provided in a stationary state (without reciprocating rotation) are fixed at opposite angles. The chemical of the same discharge amount is ejected onto the surface 102 of the substrate W, whereby the arrow X' can be actively generated on the surface 102 of the substrate W from the central portion of the substrate in the direction of the substrate transport direction X toward both end portions. The liquid flow of the chemical after the ejection is shown, and the retention of the chemical can be effectively prevented, and the uniform chemical treatment can be achieved throughout the entire surface 102 of the substrate W without adjusting the discharge amount from each nozzle portion 24'.
又，因噴嘴部24'於沿基板搬送方向X之方向呈交錯狀配置，故可減少來自各噴嘴部24'之化學藥品噴出流之互相干擾，藉此，可更有效地防止基板表面102上之噴出化學藥品產生滯留而積極地促進化學藥品產生液體流動。Further, since the nozzle portions 24' are arranged in a staggered manner in the direction in which the substrate conveyance direction X is formed, mutual interference with the chemical discharge flows from the nozzle portions 24' can be reduced, whereby the substrate surface 102 can be more effectively prevented. The squirting chemicals cause retention and actively promote the flow of liquid from the chemical.
其次，對本發明之第3實施形態之基板處理裝置進行說明。Next, a substrate processing apparatus according to a third embodiment of the present invention will be described.
圖4係用以說明本發明之第3實施形態之基板處理裝置中相對於基板W表面102設置於噴霧噴嘴14"之噴霧管部22"之噴嘴部24"其噴出口26"之對向角度之模式圖，圖4(a)係其俯視圖，圖4(b)係其剖面圖。4 is a view for explaining the angle of the nozzle portion 24" of the spray tube portion 22" of the spray nozzle 14" with respect to the surface W of the substrate W in the substrate processing apparatus according to the third embodiment of the present invention. FIG. 4(a) is a plan view thereof, and FIG. 4(b) is a cross-sectional view thereof.
於第3實施形態中，一面藉由複數個搬送輥於化學藥品處理室10內以相對於水平面200而向與基板搬送方向正交之方向傾斜特定角度之姿勢支撐基板W，一面使該基板W於水平方向X往復移動。In the third embodiment, the substrate W is supported by the plurality of transport rollers in the chemical processing chamber 10 so as to be inclined at a specific angle with respect to the horizontal plane 200 in the direction orthogonal to the substrate transport direction. Reciprocating in the horizontal direction X.
噴霧噴嘴14"係於與基板搬送方向交叉之方向等間距且互相平行地於化學藥品處理室10內配設有複數個，各噴霧噴嘴14"包括：噴霧管部22"，其於沿基板搬送方向之方向延伸；及複數個噴嘴部24"，其於該噴霧管部22"之長度方向互相接近地排成一列而設置，而將化學藥品自其噴出口26"噴出至基板W之表面102。The spray nozzles 14" are disposed in the chemical processing chamber 10 at equal intervals in the direction intersecting the substrate transport direction, and each spray nozzle 14" includes a spray tube portion 22" that is transported along the substrate. The direction of the direction extends; and a plurality of nozzle portions 24" are disposed in a line in the longitudinal direction of the spray tube portion 22", and the chemical is ejected from the discharge port 26" to the surface 102 of the substrate W. .
如圖4(a)及圖4(b)所示，與第1及第2實施形態相同，6個噴霧噴嘴14a"～14f"於與基板搬送方向X交叉之方向等間距且互相平行地配設。噴霧噴嘴14a"～14f"分別包括：噴霧管部22a"～22f"，其於沿基板搬送方向之方向延伸；及複數個噴嘴部24"，其於各噴霧管部22a～22f"之長度方向互相接近地排成一列而設置。As shown in Fig. 4 (a) and Fig. 4 (b), in the same manner as in the first and second embodiments, the six spray nozzles 14a" to 14f" are arranged at equal intervals in the direction intersecting the substrate conveyance direction X, and are arranged in parallel with each other. Assume. Each of the spray nozzles 14a" to 14f" includes spray tube portions 22a" to 22f" extending in the direction in which the substrate is conveyed, and a plurality of nozzle portions 24" in the longitudinal direction of each of the spray tube portions 22a to 22f" Set up in a row close to each other.
而且，相對於基板W之表面102以使複數個噴嘴部24"之噴出口26"之對向角度自以傾斜之姿勢搬送之基板W之表面102之傾斜上端部附近向傾斜下端部附近而相對於基板W之表面102之法線300逐漸變大之方式，將噴嘴部24"設置於各噴霧管部22a"～22f"，進而該等噴嘴部24"如圖4(a)所示於與基板搬送方向交叉之方向呈交錯狀配置。Further, the surface 102 of the substrate W is opposed to the vicinity of the inclined lower end portion of the surface 102 of the substrate W which is conveyed by the inclined angle of the ejection opening 26" of the plurality of nozzle portions 24". The nozzle portion 24" is provided in each of the spray tube portions 22a" to 22f" so that the normal line 300 of the surface 102 of the substrate W gradually becomes larger, and the nozzle portions 24" are as shown in Fig. 4(a). The direction in which the substrate transfer directions intersect is arranged in a staggered manner.
圖4(b)係例示藉由噴嘴部24"中設置於沿噴霧管部22a"～22f"之基板搬送方向X方向之大致中央部之噴嘴部24a"～24f"而形成之噴嘴部群之1組，於基板W之表面102之傾斜上端部附近相對向之噴嘴部24a"之噴出口26a"中，將相對於基板W表面102之法線300其角度設定為0°～20°，而於傾斜下端部附近相對向之噴嘴部24f"之噴出口26f"中，將該角度設定為30°～60°。藉由其他噴嘴部群而形成之組之噴出口的對向角度亦同樣地以自傾斜上端部附近向下端部附近相對於基板W表面102之法線逐漸變大之方式而設定。FIG. 4(b) shows a nozzle group formed by the nozzle portions 24a" to 24f" provided in the substantially central portion of the nozzle tube portion 22a" to 22f" in the substrate transfer direction X direction. In one set, in the discharge port 26a" of the nozzle portion 24a" opposite to the inclined upper end portion of the surface 102 of the substrate W, the angle 300 with respect to the normal line 300 of the surface W of the substrate W is set to 0 to 20, and The angle is set to 30 to 60 in the discharge port 26f" of the nozzle portion 24f" in the vicinity of the inclined lower end portion. The angle of the discharge port of the group formed by the other nozzle group is similarly It is set so that the vicinity of the lower end portion near the upper end portion of the inclined portion gradually becomes larger with respect to the normal line of the surface 102 of the substrate W.
於以上述方式構成之噴霧噴嘴14a"～14f"中，自設置於靜止狀態(無往復旋動)之噴霧管部22a"～22f"之噴嘴部24"的各個之對向角度固定之噴出口26'’，向基板W表面102噴出相同噴出量之化學藥品，藉此，可於基板W之表面102上自噴出後之化學藥品之液體流動較慢之傾斜上端部附近向化學藥品流動之傾斜下端部附近，積極地產生以箭頭符號Y'所示之噴出後之化學藥品之液體流動，而可有效地防止化學藥品產生滯留，且不用調節來自各噴嘴部24"之噴出量即可遍及基板W之整個表面102而達成均勻之化學藥品處理。In the spray nozzles 14a" to 14f" configured as described above, the nozzles of the nozzle portions 24" of the spray tube portions 22a" to 22f" which are provided in a stationary state (without reciprocating rotation) are fixed at opposite angles. 26'', a chemical having the same discharge amount is ejected onto the surface 102 of the substrate W, whereby the chemical product can be tilted on the surface 102 of the substrate W from the vicinity of the inclined upper end portion of the chemical liquid after the ejected chemical is slow. In the vicinity of the lower end portion, the liquid flow of the chemical after the ejection shown by the arrow symbol Y' is actively generated, and the retention of the chemical can be effectively prevented, and the discharge amount from each nozzle portion 24 can be prevented from being spread over the substrate. A uniform chemical treatment is achieved over the entire surface 102 of W.
又，因噴嘴部24"於與基板搬送方向X交叉之方向呈交錯狀配置，故可減少來自各噴嘴部24"之化學藥品噴出流之互相干擾，藉此可更有效地防止基板表面102上之噴出化學藥品產生滯留而積極地促進化學藥品產生液體流動。Further, since the nozzle portions 24 are arranged in a staggered manner in the direction intersecting the substrate transport direction X, mutual interference with the chemical discharge flows from the nozzle portions 24" can be reduced, whereby the substrate surface 102 can be more effectively prevented. The squirting chemicals cause retention and actively promote the flow of liquid from the chemical.
再者，於上述之各實施形態中，雖已對將本發明應用於使用蝕刻液、顯影液、抗蝕剝離液等化學藥品作為處理液之化學藥品處理之情形進行說明，但本發明並不限定於此，其亦可應用於使用純水等清洗液作為處理液之清洗處理。Furthermore, in the above-described embodiments, the present invention has been applied to a chemical treatment using a chemical such as an etching solution, a developing solution, or a resist stripping liquid as a processing liquid, but the present invention does not. The present invention is also limited to the cleaning treatment using a cleaning liquid such as pure water as a treatment liquid.
又，於上述各實施形態中，雖對使用之噴霧噴嘴之個數為6個之構成進行說明，但本發明並不受限於此，其亦可根據基板W之尺寸或處理之種類而選擇適當個數之噴霧噴嘴。Further, in each of the above embodiments, the configuration in which the number of the spray nozzles used is six, the present invention is not limited thereto, and may be selected depending on the size of the substrate W or the type of processing. A suitable number of spray nozzles.
1．．．基板處理裝置1. . . Substrate processing device
10．．．化學藥品處理室10. . . Chemical processing room
12．．．化學藥品儲槽12. . . Chemical storage tank
14、14a、14b、14c、14d、14e、14f、14'、14a'、14b'、14c'、14d'、14e'、14f'、14"、14a"、14b"、14c"、14d"、14e"、14f"．．．噴霧噴嘴14, 14a, 14b, 14c, 14d, 14e, 14f, 14', 14a', 14b', 14c', 14d', 14e', 14f', 14", 14a", 14b", 14c", 14d", 14e", 14f"... spray nozzle
16．．．送液泵16. . . Liquid pump
18．．．化學藥品供給路18. . . Chemical supply road
20．．．循環排水路20. . . Circulating drainage road
22、22a、22b、22c、22d、22e、22f、22'、22a'、22b'、22c'、22d'、22e'、22f'、22"、22a"、22b"、22c"、22d"、22e"、22f"．．．噴霧管部22, 22a, 22b, 22c, 22d, 22e, 22f, 22', 22a', 22b', 22c', 22d', 22e', 22f', 22", 22a", 22b", 22c", 22d", 22e", 22f"... spray tube
24、24a、24b、24c、24d、24e、24f、24'、24a'、24b'、24c'、24d'、24e'、24f'、24"、24a"、24b"、24c"、24d"、24e"、24f"、100．．．噴嘴部24, 24a, 24b, 24c, 24d, 24e, 24f, 24', 24a', 24b', 24c', 24d', 24e', 24f', 24", 24a", 24b", 24c", 24d", 24e", 24f", 100...nozzle
26、26a、26b、26c、26d、26e、26f、26'、26a'、26b'、26c'、26d'、26e'、26f'、26"、26a"、26b"、26c"、26d"、26e"、26f"．．．噴出口26, 26a, 26b, 26c, 26d, 26e, 26f, 26', 26a', 26b', 26c', 26d', 26e', 26f', 26", 26a", 26b", 26c", 26d", 26e", 26f"...spray outlet
102．．．基板之表面102. . . Surface of the substrate
200．．．水平面200. . . level
300．．．法線300. . . Normal
X、X'．．．基板搬送方向X, X'. . . Substrate transport direction
Y、Y'．．．箭頭符號Y, Y'. . . Arrow symbol
W．．．基板W. . . Substrate
圖1係模式性地表示本發明之第1實施形態之基板處理裝置之概略構成圖。Fig. 1 is a schematic block diagram showing a substrate processing apparatus according to a first embodiment of the present invention.
圖2(a)及(b)係用以說明本發明之第1實施形態中相對於基板表面設置於噴霧噴嘴之噴霧管部之噴嘴部之噴出口之對向角度之模式圖。2(a) and 2(b) are schematic diagrams for explaining the opposing angle of the discharge port of the nozzle portion of the spray nozzle portion of the spray nozzle with respect to the surface of the substrate in the first embodiment of the present invention.
圖3(a)及(b)係用以說明本發明之第2實施形態中相對於基板表面設置於噴霧噴嘴之噴霧管部之噴嘴部之噴出口之對向角度之模式圖。3(a) and 3(b) are schematic views for explaining the opposing angle of the discharge port of the nozzle portion of the spray nozzle portion of the spray nozzle with respect to the surface of the substrate in the second embodiment of the present invention.
圖4(a)及(b)係用以說明本發明之第3實施形態中相對於基板表面設置於噴霧噴嘴之噴霧管部之噴嘴部之噴出口之對向角度之模式圖。4(a) and 4(b) are schematic views for explaining the opposing angle of the discharge port of the nozzle portion of the spray nozzle portion of the spray nozzle with respect to the surface of the substrate in the third embodiment of the present invention.
圖5係表示將處理液自先前之基板處理裝置中之噴嘴部噴出至基板表面之情況之模式圖。Fig. 5 is a schematic view showing a state in which a processing liquid is ejected from a nozzle portion of a substrate processing apparatus to a surface of a substrate.
圖6(a)及(b)係將處理液自先前之噴霧管部往復旋動型之基板處理裝置中之噴嘴部噴出至基板表面之情況之模式圖。Fig. 6 (a) and (b) are schematic views showing a state in which the processing liquid is ejected from the nozzle portion of the substrate processing apparatus of the reciprocating rotary type of the previous spray tube portion onto the surface of the substrate.
14a、14b、14c、14d、14e、14f．．．噴霧噴嘴14a, 14b, 14c, 14d, 14e, 14f. . . Spray nozzle
22a、22b、22c、22d、22e、22f．．．噴霧管部22a, 22b, 22c, 22d, 22e, 22f. . . Spray tube
24a、24b、24c、24d、24e、24f．．．噴嘴部24a, 24b, 24c, 24d, 24e, 24f. . . Nozzle section
26a、26b、26c、26d、26e、26f．．．噴出口26a, 26b, 26c, 26d, 26e, 26f. . . Spray outlet
102．．．基板之表面102. . . Surface of the substrate
X．．．基板搬送方向X. . . Substrate transport direction
Y．．．箭頭符號Y. . . Arrow symbol
W．．．基板W. . . Substrate
Claims (5)
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| JP2010211716A JP5710921B2 (en) | 2010-09-22 | 2010-09-22 | Substrate processing equipment |
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| TW201230225A TW201230225A (en) | 2012-07-16 |
| TWI441275B true TWI441275B (en) | 2014-06-11 |
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| KR (1) | KR101217371B1 (en) |
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| JP6271304B2 (en) | 2013-03-29 | 2018-01-31 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
| JP6258892B2 (en) * | 2014-05-13 | 2018-01-10 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
| CN105185726B (en) * | 2014-05-13 | 2018-09-21 | 芝浦机械电子株式会社 | Substrate board treatment, substrate processing method using same, apparatus for manufacturing substrate and manufacture of substrates |
| JP6240777B2 (en) * | 2014-07-24 | 2017-11-29 | シャープ株式会社 | Cleaning device |
| KR101697176B1 (en) * | 2015-01-12 | 2017-01-17 | 주식회사 기가레인 | Nozzle block for coating apparatus |
| JP6509104B2 (en) * | 2015-09-30 | 2019-05-08 | 東京エレクトロン株式会社 | Substrate liquid processing system |
| WO2017164126A1 (en) * | 2016-03-25 | 2017-09-28 | 東レ株式会社 | Developing device and circuit board manufacturing method |
| JP7046773B2 (en) * | 2018-10-01 | 2022-04-04 | 本田技研工業株式会社 | Painting equipment |
| JP7197376B2 (en) * | 2019-01-17 | 2022-12-27 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| CN109887865B (en) * | 2019-03-07 | 2021-08-20 | 上海华力微电子有限公司 | Wafer cleaning and drying device and method and chemical mechanical polishing machine |
| JP7312738B2 (en) * | 2020-12-11 | 2023-07-21 | 芝浦メカトロニクス株式会社 | Substrate processing equipment |
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| JPH01309981A (en) * | 1988-06-07 | 1989-12-14 | Toshiba Corp | Etching device |
| JPH093661A (en) * | 1995-06-19 | 1997-01-07 | Toppan Printing Co Ltd | Etching device |
| JP3323385B2 (en) * | 1995-12-21 | 2002-09-09 | 大日本スクリーン製造株式会社 | Substrate cleaning apparatus and substrate cleaning method |
| JP3171807B2 (en) * | 1997-01-24 | 2001-06-04 | 東京エレクトロン株式会社 | Cleaning device and cleaning method |
| JP2002324481A (en) | 2001-04-24 | 2002-11-08 | Dainippon Printing Co Ltd | Resist peeling apparatus |
| JP4138504B2 (en) | 2002-03-27 | 2008-08-27 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| JP3978065B2 (en) * | 2002-03-28 | 2007-09-19 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and processing method |
| JP2006032802A (en) * | 2004-07-20 | 2006-02-02 | Pioneer Electronic Corp | Wetting device, manufacturing device of display panel, and wetting treatment method |
| JP4483544B2 (en) * | 2004-11-19 | 2010-06-16 | 凸版印刷株式会社 | Etching apparatus and shadow mask manufacturing method using the same |
| JP2006255556A (en) * | 2005-03-16 | 2006-09-28 | Sharp Corp | Liquid treatment apparatus and liquid crystal display device |
| KR100666352B1 (en) * | 2005-05-26 | 2007-01-11 | 세메스 주식회사 | Substrate Cleaning Drying Apparatus and Method |
| JP2009088384A (en) * | 2007-10-02 | 2009-04-23 | Sokudo:Kk | Substrate treatment device |
| JP2010232637A (en) * | 2009-03-04 | 2010-10-14 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and semiconductor device manufacturing method |
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| JP5710921B2 (en) | 2015-04-30 |
| TW201230225A (en) | 2012-07-16 |
| JP2012066176A (en) | 2012-04-05 |
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