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TWI433242B - Liquid material filling method, device and medium with progam - Google Patents

Liquid material filling method, device and medium with progam Download PDF

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Publication number
TWI433242B
TWI433242B TW097104577A TW97104577A TWI433242B TW I433242 B TWI433242 B TW I433242B TW 097104577 A TW097104577 A TW 097104577A TW 97104577 A TW97104577 A TW 97104577A TW I433242 B TWI433242 B TW I433242B
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coating
liquid material
correction
region
pattern
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TW097104577A
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Chinese (zh)
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TW200845240A (en
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Kazumasa Ikushima
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Musashi Engineering Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/28—Processes for applying liquids or other fluent materials performed by transfer from the surfaces of elements carrying the liquid or other fluent material, e.g. brushes, pads, rollers
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Coating Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

液體材料之填充方法、裝置及程式之媒體Liquid material filling method, device and program medium

本發明係關於將在基板與其上所載置之工件(work)的間隙利用毛細管現象自吐出部吐出的液體材料予以填充之方法、裝置及程式，尤其是於半導體封裝之底部填充(underfill)步驟中不需進行複雜的參數計算而可修正液體材料之吐出量的方法、裝置及程式。The present invention relates to a method, apparatus, and program for filling a liquid material discharged from a discharge portion by a capillary phenomenon on a substrate and a workpiece placed thereon, particularly in an underfill step of a semiconductor package. A method, apparatus, and program for correcting the discharge amount of a liquid material without performing complicated parameter calculation.

又，本發明中所謂之「吐出」，係包含液體材料自吐出部離開之前與工件接觸的類型之吐出方式、及液體材料自吐出部離開之後與工件接觸的類型之吐出方式。In the present invention, the "discharge" is a type of discharge method in which a liquid material comes into contact with a workpiece before leaving the discharge portion, and a discharge method in which the liquid material comes into contact with the workpiece after leaving the discharge portion.

近年來，針對隨著電子器材之小型化、高性能化所需之半導體零件的高密度安裝、多腳(pin)化之要求，稱為「覆晶方式」之安裝技術受到矚目。覆晶方式之安裝係於半導體晶片表面所存在的電極墊(pad)上形成凸起狀電極(凸塊)，直接與相對向的基板上之電極墊接合而進行。若使用覆晶方式，則安裝所需的必要面積係與半導體晶片面積大致相等，可達成高密度安裝。又，可在半導體晶片全面上配置電極墊，亦適於多腳化。此外，連接佈線長僅為凸塊電極的高度，電氣特性良好，而由於半導體晶片之連接部的相反面為露出之狀態，故有放熱容易等之優點。In recent years, in order to meet the demand for high-density mounting and pinning of semiconductor components required for miniaturization and high performance of electronic equipment, the mounting technology called "cladging method" has attracted attention. The flip chip mounting is performed by forming bump electrodes (bumps) on electrode pads existing on the surface of the semiconductor wafer, and directly bonding them to the electrode pads on the opposite substrates. If the flip chip method is used, the necessary area required for mounting is substantially equal to the area of the semiconductor wafer, and high-density mounting can be achieved. Further, the electrode pad can be disposed on the entire semiconductor wafer, and is also suitable for multi-legging. Further, the length of the connection wiring is only the height of the bump electrode, and the electrical characteristics are good, and since the opposite surface of the connection portion of the semiconductor wafer is exposed, there is an advantage that heat release is easy.

於覆晶封裝中，為了防止因半導體晶片與基板之熱膨脹係數的差所產生之應力集中於連接部而使連接部破壞，係於半導體晶片與基板的間隙填充樹脂以補強連接部。此步 驟稱為底部填充(參照圖1)。In the flip chip package, in order to prevent stress caused by a difference in thermal expansion coefficient between the semiconductor wafer and the substrate from being concentrated on the connection portion, the connection portion is broken, and a gap between the semiconductor wafer and the substrate is filled with a resin to reinforce the connection portion. This step It is called bottom filling (refer to Figure 1).

底部填充步驟係沿著半導體晶片的外周(例如一邊或二邊)塗佈液狀樹脂，利用毛細管現象使樹脂填充於半導體晶片與基板的間隙後，以烤爐等加熱使樹脂硬化而進行。In the underfill step, a liquid resin is applied along the outer circumference (for example, one side or both sides) of the semiconductor wafer, and the resin is filled in the gap between the semiconductor wafer and the substrate by capillary action, and then the resin is cured by heating in an oven or the like.

於底部填充步驟中，必須考慮隨著時間經過之樹脂材料的黏度變化。理由在於，黏度若變高，自材料吐出口之吐出量會減少，且毛細管現象會不足，導致無法在間隙填充適當量的材料。黏度變化劇烈者，例如經過6小時後，於吐出量甚至會減少10%以上。因此，必須對黏度之經時變化所伴隨之吐出量的變化加以修正。In the underfill step, the viscosity change of the resin material over time must be considered. The reason is that if the viscosity is high, the amount of discharge from the material discharge port is reduced, and the capillary phenomenon is insufficient, so that an appropriate amount of material cannot be filled in the gap. If the viscosity changes drastically, for example, after 6 hours, the amount of spit will be reduced by more than 10%. Therefore, it is necessary to correct the change in the discharge amount accompanying the change in viscosity over time.

然而，於底部填充步驟中所用之樹脂材料的填充，通常係使用注料器(dispenser)。注料器中之一種為自噴嘴將液體材料的小液滴噴射吐出之噴射式注料器。However, the filling of the resin material used in the underfilling step is usually carried out using a dispenser. One of the injectors is a jet type injector that ejects small droplets of liquid material from a nozzle.

使用噴射式注料器施行底部填充步驟的方法，係揭示於例如日本專利特開2004-344883號(專利文獻1)中。亦即，於專利文獻1中揭示的方法為一種用噴射式注料器使黏性材料吐出到基板上的方法，此方法包含：準備欲吐出之黏性材料的總體積及總體積之黏性材料之吐出長度；使之進行動作，俾使複數之黏性材料液滴塗佈於重量計上；產生表示塗佈於重量計上之複數黏性材料液滴的重量之回饋訊號；以及以總體積之黏性材料涵蓋全長而吐出之方式，求出注料器與基板間的最大相對速度。A method of performing an underfilling step using a jet type injector is disclosed in, for example, Japanese Patent Laid-Open No. 2004-344883 (Patent Document 1). That is, the method disclosed in Patent Document 1 is a method of discharging a viscous material onto a substrate by a jet type injector, the method comprising: preparing a viscosity of a total volume and a total volume of the viscous material to be discharged. The length of the material is ejected; the plurality of viscous material droplets are applied to the weight meter; a feedback signal indicative of the weight of the plurality of viscous material droplets applied to the weight meter is generated; and the total volume is The viscous material covers the full length and spits out, and the maximum relative velocity between the injector and the substrate is obtained.

又，於專利文獻1中揭示一種方法，其包含：求出複數的黏性材料液滴之各自的體積；求出與總體積大致相等之 必要的液滴總數目；求出涵蓋全長地使黏性材料液滴大致均勻分配所需之各液滴間的距離；以及以使黏性材料液滴之全數可涵蓋全長地大致均勻吐出之方式，求出注料器與基板間之最大相對速度。Further, Patent Document 1 discloses a method comprising: determining a volume of each of a plurality of viscous material droplets; and determining a volume equal to the total volume. The total number of droplets required; the distance between the droplets required to cover the entire length of the viscous material droplets over a full length; and the manner in which the total number of droplets of viscous material can cover the entire length substantially uniformly Find the maximum relative speed between the injector and the substrate.

專利文獻1：日本專利特開2004-344883號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2004-344883

然而，於專利文獻1所記載的方法中，為了涵蓋全長地均勻吐出，必須有求出所須之液滴數與各液滴的間隔之步驟，此步驟中，由於須藉由計算求出各種參數，於計算時多會產生誤差。However, in the method described in Patent Document 1, in order to cover uniform discharge over a full length, it is necessary to obtain a step of determining the number of droplets required and the interval between the droplets. In this step, various calculations are required by calculation. Parameters, more errors will occur in the calculation.

又，為求更正確地均勻化，每個液滴的大小必須一致，因此需要特別的手段。Moreover, in order to achieve more uniform homogenization, the size of each droplet must be uniform, and therefore special means are required.

又，噴嘴(吐出部)與基板之間的最大相對速度之變化，於黏度愈大的情況，速度係往變慢的方向變化。速度若變慢，則塗佈時間加長，而有影響到生產性之問題。Further, the maximum relative speed between the nozzle (discharge portion) and the substrate changes, and as the viscosity increases, the speed changes in a slower direction. If the speed is slower, the coating time is lengthened, and the problem of productivity is affected.

半導體晶片之尺寸若達某程度以上，即使進行液體材料可大量吐出的二邊或三邊之塗佈，僅以一次之塗佈，仍有整體之填充量不足的情況。此情形下，為達到所需的填充量，係沿相同路徑重複複數次的塗佈，以達到所需的填充量。在此，於相同路徑進行複數次塗佈時，與一次塗佈的情況相比，吐出量之變化亦為複數倍。If the size of the semiconductor wafer is more than a certain level, even if the coating of two or three sides of the liquid material can be carried out in a large amount, the coating amount may be insufficient in one shot. In this case, to achieve the desired fill level, multiple passes are repeated along the same path to achieve the desired fill level. Here, when a plurality of coatings are applied in the same route, the change in the discharge amount is plural times as compared with the case of one application.

因此，本發明之目的在於提供可解決上述問題，不須複雜的參數計算，且可彈性地因應吐出量之變化的液體材料 之填充方法、裝置及程式。Accordingly, it is an object of the present invention to provide a liquid material which can solve the above problems without complicated parameter calculation and which can elastically respond to changes in discharge amount. Filling method, device and program.

作為使塗佈速度保持為一定的狀態之修正，可考慮藉由控制加壓量、柱塞(plunger)之移動量、閥之往返動作之速度等，使每單位時間自吐出部的吐出量保持為一定。然而，此等方法由於需藉由計算求出各種參數，故有計算時常會產生誤差之虞。因此，發明者針對如何使修正步驟簡明化而刻意加以研究。As a correction for keeping the coating speed constant, it is conceivable to maintain the discharge amount from the discharge unit per unit time by controlling the amount of pressurization, the amount of movement of the plunger, the speed of the reciprocation of the valve, and the like. Be sure. However, since these methods require various parameters to be calculated by calculation, there are often errors in calculations. Therefore, the inventors deliberately studied how to make the correction step concise.

又，使整體塗佈圖案由複數的修正塗佈圖案、或非修正塗佈圖案與修正塗佈圖案之組合構成，藉此可彈性地因應吐出量之變化。Further, the entire coating pattern is composed of a plurality of correction coating patterns or a combination of the non-correction coating pattern and the correction coating pattern, whereby the amount of discharge can be flexibly adjusted.

亦即，第1發明為一種液體材料之填充方法，係作成由沿著工件(work)外周之非修正塗佈圖案、和與非修正塗佈圖案重疊之修正塗佈圖案所構成之整體塗佈圖案，依據整體塗佈圖案，自吐出部吐出液體材料，於基板與載置於其上的工件之間隙利用毛細管現象而填充液體材料者；其特徵在於，修正塗佈圖案係由塗佈區域及非塗佈區域所構成；藉由使修正塗佈圖案之塗佈區域及非塗佈區域伸縮，而進行液體材料吐出量之修正。That is, the first invention is a method of filling a liquid material by integrally coating a non-corrected coating pattern along the outer circumference of a work and a modified coating pattern overlapping the non-corrected coating pattern. a pattern in which a liquid material is discharged from a discharge portion according to an overall coating pattern, and a liquid material is filled by a capillary phenomenon between a substrate and a workpiece placed thereon; wherein the correction coating pattern is a coating region and The composition of the non-coated region is corrected, and the amount of discharge of the liquid material is corrected by expanding and contracting the coated region and the non-coated region of the modified coating pattern.

第2發明為於第1發明中，塗佈區域及非塗佈區域係交替地連續。According to a second aspect of the invention, in the first aspect of the invention, the application region and the non-coating region are alternately continuous.

第3發明為於第1或第2發明中，於不改變修正塗佈圖案的全長之狀態下，使塗佈區域及非塗佈區域伸縮。According to a third aspect of the invention, in the first or second aspect of the invention, the coated region and the non-coated region are expanded and contracted without changing the entire length of the correction coating pattern.

第4發明為於第1至3之任一發明中，於上述整體塗佈 圖案中，最後之塗佈圖案為修正塗佈圖案。According to a fourth aspect of the invention, in the invention of any one of the first to third aspect In the pattern, the final coating pattern is a modified coating pattern.

第5發明為於第1至4之任一發明中，上述整體塗佈圖案係由複數之非修正塗佈圖案與1個以上之修正塗佈圖案所構成。According to a fifth aspect of the invention, in the first aspect of the invention, the total coating pattern is composed of a plurality of uncorrected coating patterns and one or more modified coating patterns.

第6發明為於第1至5之任一發明中，液體材料吐出量之修正係藉由在整體塗佈圖案中附加新的修正塗佈圖案或除去既有的修正塗佈圖案而施行。According to a sixth aspect of the invention, the liquid material discharge amount is corrected by adding a new correction coating pattern to the entire coating pattern or removing the existing correction coating pattern.

第7發明為一種液體材料之填充方法，係作成由沿著工件外周之第一修正塗佈圖案、和與第一修正塗佈圖案重疊之第二修正塗佈圖案所構成之整體塗佈圖案，依據整體塗佈圖案，自吐出部吐出液體材料，於基板與載置於其上的工件之間隙利用毛細管現象填充液體材料者；其特徵在於，第一及第二修正塗佈圖案係由塗佈區域及非塗佈區域所構成；藉由使第一及第二修正塗佈圖案之塗佈區域及非塗佈區域伸縮，而進行液體材料吐出量之修正。According to a seventh aspect of the invention, in the method of filling a liquid material, the entire coating pattern formed by the first correction coating pattern along the outer circumference of the workpiece and the second correction coating pattern overlapping the first correction coating pattern is formed. According to the overall coating pattern, the liquid material is discharged from the ejection portion, and the liquid material is filled by the capillary phenomenon in the gap between the substrate and the workpiece placed thereon; wherein the first and second modified coating patterns are coated The area and the non-coating area are formed; and the coating area and the non-coating area of the first and second correction coating patterns are expanded and contracted to correct the liquid material discharge amount.

第8發明為於第7發明中，塗佈區域及非塗佈區域係交替地連續。According to a eighth aspect of the invention, in the seventh aspect of the invention, the application region and the non-coating region are alternately continuous.

第9發明為於第7或8發明中，於不改變第一及第二修正塗佈圖案的全長之狀態下，使塗佈區域及非塗佈區域伸縮。According to a ninth aspect of the invention, in the seventh or eighth aspect of the invention, the coated region and the non-coated region are expanded and contracted without changing the entire length of the first and second modified coating patterns.

第10發明為於第7至9之任一發明中，第一及第二修正塗佈圖案為相同之修正塗佈圖案。According to a tenth aspect of the invention, the first and second modified coating patterns are the same modified coating pattern.

第11發明為於第7至10之任一發明中，第一修正塗佈圖案之塗佈區域的長度為第二修正塗佈圖案之塗佈區域 的長度以上，於第一修正塗佈圖案之後，進行依據第二修正塗佈圖案之塗佈。According to a seventh aspect of the invention, in the invention of any of the seventh to tenth, the length of the coating region of the first correction coating pattern is the coating region of the second correction coating pattern. Above the length, after the first correction coating pattern, coating according to the second correction coating pattern is performed.

第12發明係於第7至11之任一發明中，上述整體塗佈圖案係由1個以上之第一修正塗佈圖案及複數之第二修正塗佈圖案、或複數之第一修正塗佈圖案及1個以上之第二修正塗佈圖案所構成。According to a twelfth aspect of the invention, the first application pattern of the first modified coating pattern, the plurality of first correction coating patterns, or the plurality of second correction coating patterns, or the plurality of first correction coatings A pattern and one or more second correction coating patterns are formed.

第13發明係於第7至12之任一發明中，液體材料吐出量之修正係藉由在整體塗佈圖案中附加新的第一及/或第二修正塗佈圖案修正塗佈圖案，或除去既有的第一及/或第二修正塗佈圖案而施行。According to a thirteenth aspect of the invention, the liquid material discharge amount is corrected by adding a new first and/or second correction coating pattern to the entire coating pattern, or Execution is performed by removing the existing first and/or second correction coating patterns.

第14發明係於第1至13之任一發明中，整體塗佈圖案係沿著構成工件的外周之複數的邊所構成。According to a fourteenth aspect of the invention, in the first aspect of the invention, the overall coating pattern is formed along a plurality of sides constituting the outer circumference of the workpiece.

第15發明係於第1至14之任一發明中，於上述吐出量修正之前後，吐出裝置的移動速度未改變。According to a fifteenth aspect of the invention, in the invention of any of the first aspect, the moving speed of the discharge device is not changed after the correction of the discharge amount.

第16發明係於第1至15之任一發明中，測定修正前之吐出時間(T1)之期間所吐出的液體材料重量(W1)，由吐出時間(T1)與重量(W1)的關係算出吐出適當重量(W2)所需之時間(T2)，由時間(T2)與吐出部之移動速度(V)算出塗佈區域之適當全長(L2)，以塗佈區域之適當全長(L2)與修正前之塗佈區域之全長(L1)的差作為修正塗佈圖案之塗佈區域與非塗佈區域各自之全長的伸縮量。According to a sixteenth aspect of the invention, the liquid material weight (W1) discharged during the period of the discharge time (T1) before the correction is measured, and the relationship between the discharge time (T1) and the weight (W1) is calculated. The time (T2) required to discharge the appropriate weight (W2), and the appropriate full length (L2) of the coating area is calculated from the time (T2) and the moving speed (V) of the discharge portion to the appropriate full length (L2) of the coating area. The difference in the total length (L1) of the coating region before the correction is used as the amount of expansion and contraction of the entire length of the coating region and the non-coating region of the correction coating pattern.

第17發明係於第1至16之任一發明中，測定液體材料吐出至適當重量(W2)的時間(T2)，由時間(T2)與吐出部之移動速度(V)算出塗佈區域之適當全長(L2)，以塗佈區域 之適當全長(L2)與修正前之塗佈區域之全長(L1)的差作為修正塗佈圖案之塗佈區域與非塗佈區域各自之全長的伸縮量。According to a seventeenth aspect of the invention, in the first aspect of the invention, the time (T2) at which the liquid material is discharged to the appropriate weight (W2) is measured, and the coating area is calculated from the time (T2) and the moving speed (V) of the discharge portion. Appropriate full length (L2) to coat area The difference between the appropriate full length (L2) and the total length (L1) of the coating region before the correction is used as the amount of expansion and contraction of the entire length of the coating region and the non-coating region of the correction coating pattern.

第18發明係於第16或17發明中，將吐出時間或吐出重量與黏度的關係記憶於記憶體，於液體材料交換後之步驟中，依據該記憶體之記憶資䚼訊，算出修正塗佈圖案之塗佈區域與非塗佈區域各自之全長的伸縮量。According to a sixteenth or seventeenth aspect of the present invention, the relationship between the discharge time or the discharge weight and the viscosity is stored in the memory, and in the step of exchanging the liquid material, the correction coating is calculated based on the memory information of the memory. The amount of expansion and contraction of each of the coated region and the non-coated region of the pattern.

第19發明係於第16至18之任一發明中，設置判斷是否進行修正之容許範圍，於測定值超出上述容許範圍之情況，對塗佈區域與非塗佈區域各自之全長的伸縮量進行修正。According to a tenth aspect of the present invention, in the invention of any of the sixteenth to eighteenth aspect, the allowable range for determining whether or not to perform the correction is provided, and when the measured value is outside the allowable range, the amount of expansion and contraction of each of the coated region and the non-coated region is performed. Corrected.

第20發明係於第1至19之任一發明中，進行液體材料之經時黏度變化所伴隨之吐出量的修正。According to a twentieth aspect of the invention, in the first aspect of the invention, the correction of the discharge amount accompanying the change in the viscosity of the liquid material is performed.

第21發明係於第1至20之任一發明中，依據使用者作為修正週期所輸入之時間資訊、工件片數或基板之片數，進行液體材料之吐出量的修正。According to a twenty-first aspect of the invention, in the first aspect of the invention, the discharge amount of the liquid material is corrected based on the time information input by the user as the correction cycle, the number of pieces of the workpiece, or the number of the substrates.

第22發明係一種裝置，其特徵為，於具備用以供給吐出的液體材料之液材供給部、具有用以吐出自液材供給部所供給之液體材料的吐出口之吐出部、用以對從吐出口所吐出之液體材料的量進行計量之計量手段、用以使吐出部自由移動之驅動部、以及控制此等動作之控制部之塗佈裝置中，控制部具有施行申請專利範圍第1或7項之液體材料之填充方法的程式。According to a twenty-second aspect of the invention, there is provided a device comprising: a liquid material supply unit for supplying a liquid material to be discharged; and a discharge unit having a discharge port for discharging a liquid material supplied from the liquid material supply unit; In the coating device for measuring the amount of the liquid material discharged from the discharge port, the driving unit for moving the discharge portion, and the coating device for controlling the operation of the operation, the control unit has the patent application scope first. Or a program of filling methods for liquid materials of seven items.

第23發明係一種程式，其特徵為，於具備用以供給吐 出的液體材料之液材供給部、用以對從吐出口所吐出之液體材料的量進行計量之計量手段、具有將液體材料吐出的吐出口之吐出部、用以使吐出部自由移動之驅動部、以及控制此等動作之控制部之塗佈裝置中，控制部中施行申請專利範圍第1或7項之液體材料之填充方法。A twenty-third invention is a program characterized by being provided for supplying spit a liquid material supply unit for discharging the liquid material, a measuring means for measuring the amount of the liquid material discharged from the discharge port, a discharge portion having a discharge port for discharging the liquid material, and a drive for freely moving the discharge portion In the coating device of the control unit that controls the operations, the method of filling the liquid material of claim 1 or 7 is performed in the control unit.

又，所謂計量手段並非僅以後述之重量計為對象，亦指公知的一般之計量手段(例如包含光學式計測系統)。Further, the measuring means is not only a weight meter to be described later, but also a known general measuring means (for example, an optical measuring system).

依據本發明，於對塗佈圖案全長做均勻塗佈時，可不受限制地自由作成塗佈圖案。亦即，藉由組合各種塗佈圖案，可彈性地因應吐出量的變化，尤其是相對於整體塗佈量之修正量大的情況更佳。According to the present invention, when the entire length of the coating pattern is uniformly applied, the coating pattern can be freely formed without limitation. In other words, by combining various coating patterns, it is possible to elastically respond to changes in the discharge amount, particularly in the case where the correction amount with respect to the entire coating amount is large.

又，與對一個一個液滴進行修正的情況相較，步驟更為簡便，不易產生因計算而產生誤差。Moreover, compared with the case of correcting one droplet, the procedure is simpler, and it is less likely to cause an error due to calculation.

而且，由於不須改變吐出部的移動速度，故不會影響到塗佈時間。Moreover, since it is not necessary to change the moving speed of the discharge portion, the coating time is not affected.

以下針對實施本發明之最佳形態做說明。The best mode for carrying out the invention will now be described.

(1)整體塗佈圖案之形成(1) Formation of overall coating pattern

作成一至複數個之整體塗佈圖案，選擇其中之一。整體塗佈圖案係由複數之修正塗佈圖案、或1個以上之非修正塗佈圖案與1個以上之修正塗佈圖案之組合所構成，至少必須有1個以上之修正塗佈圖案。例如，如圖6所示般，為沿著屬於方形工件之晶片2之一邊的線，作成由交替連 續的塗佈區域12與非塗佈區域13所構成的修正塗佈圖案14、和與修正塗佈圖案14全長相同且沿著同一晶片2的一邊之僅由塗佈區域12構成的非修正塗佈圖案15所構成之整體塗佈圖案。又，工件並非限定於在方形上者，亦可為圓形或多角形。Make one to a plurality of overall coating patterns and choose one of them. The overall coating pattern is composed of a plurality of modified coating patterns or a combination of one or more non-correcting coating patterns and one or more modified coating patterns, and at least one or more modified coating patterns are required. For example, as shown in FIG. 6, the lines are formed along one side of the wafer 2 belonging to the square workpiece, and are alternately connected. The correction coating pattern 14 composed of the continuous coating region 12 and the non-coating region 13 and the non-correcting coating layer which is the same as the entire length of the correction coating pattern 14 and which is formed only by the coating region 12 along one side of the same wafer 2 The overall coating pattern formed by the cloth pattern 15. Further, the workpiece is not limited to a square shape, and may be circular or polygonal.

構成整體塗佈圖案之各塗佈圖案之全長、塗佈區域12及非塗佈區域13之數目與塗佈次數係由填充晶片2與基板1的間隙所必須的液體材料5之重量或體積等決定。例如，如圖6般對晶片2之一邊進行二次重覆塗佈的情況，第一次之塗佈圖案16係無非塗佈區域13地構成，第二次之塗佈圖案17係由一個塗佈區域12之兩側成為非塗佈區域13而構成一個整體塗佈圖案。The total length of each of the coating patterns constituting the entire coating pattern, the number of coating regions 12 and the non-coating regions 13, and the number of coatings are the weight or volume of the liquid material 5 necessary for filling the gap between the wafer 2 and the substrate 1. Decide. For example, when one side of the wafer 2 is repeatedly coated as shown in FIG. 6, the first application pattern 16 is formed without the non-coated region 13, and the second coating pattern 17 is coated with one. The both sides of the cloth region 12 become the uncoated region 13 to constitute an integral coating pattern.

圖中之第二次以後之塗佈圖案係為了說明方便起見而描繪成並排情形，實際上，第二次以後之塗佈圖案係沿著與第一次塗佈圖案相同之路徑重疊而移動。可使噴嘴11沿同一方向移動進行吐出，惟就塗佈時間之觀點考量，以邊吐出邊使噴嘴11來回動作為佳。The second and subsequent coating patterns in the figure are depicted as side-by-side for convenience of explanation. In fact, the second and subsequent coating patterns are moved along the same path as the first coating pattern. . The nozzle 11 can be moved in the same direction to be ejected, but it is preferable to measure the coating time so that the nozzle 11 can move back and forth while discharging.

(2)初期參數之設定(2) Initial parameter setting

對塗佈所用之液體材料，藉由事先的試驗算出整體塗佈圖案與適當重量及/或適當吐出時間之關係，記憶於控制部的記憶體中。吐出量之變化雖然亦會受到溫度變化所產生之液體材料的黏度變化與吐出部之阻塞及水力高(hydraulic head)差之影響，惟藉由設定此等參數，可整體性地適用於吐出量之變化。The relationship between the overall coating pattern and the appropriate weight and/or the appropriate discharge time is calculated by a prior test for the liquid material used for coating, and is stored in the memory of the control unit. Although the change in the amount of discharge is also affected by the change in the viscosity of the liquid material caused by the temperature change and the blockage of the discharge portion and the difference in the hydraulic head, by setting these parameters, it is possible to apply the discharge amount as a whole. Change.

又，作為液體材料之使用時間的界限值，以將製造廠商所定之使用壽命(pot life)所算出之值預先予以記憶為佳。Further, as the limit value of the use time of the liquid material, it is preferable to memorize the value calculated by the manufacturer's pot life.

又，以後述(4)算出修正量時，以將吐出重量設為一定時之「吐出時間與黏度之關係」、將吐出時間設為一定時之「吐出重量與黏度之關係」預先記憶於控制部之記憶體中為佳。只要是相同種類的液體材料，於第二次以後之作業中，藉由記憶於控制部的資料，可算出修正量，故不須進行修正所需之吐出及測定作業。In addition, when the correction amount is calculated in the following (4), the relationship between the discharge time and the viscosity when the discharge weight is constant is set, and the relationship between the discharge weight and the viscosity when the discharge time is constant is stored in advance. The memory of the ministry is better. As long as it is the same type of liquid material, the correction amount can be calculated by the data stored in the control unit in the second and subsequent operations, so that the discharge and measurement operations required for the correction are not required.

(3)修正週期之設定(3) Correction period setting

設定修正週期，即修正整體塗佈圖案的週期。作為修正週期，例如係設定使用者所輸入之時間資訊、晶片2或基板1的片數等。於設定既定時間之情況，係設定液體材料之吐出量變化自作業開始至超過容許範圍之假想的時間。於設定片數之情況，係求出一片晶片2之處理時間或一片基板1之處理時間(移入塗佈移出的時間)、並由上述既定時間求出處理片數，而進行設定。The correction period is set, that is, the period of the overall coating pattern is corrected. As the correction period, for example, time information input by the user, the number of wafers 2 or the number of sheets of the substrate 1 and the like are set. In the case where the predetermined time is set, the discharge amount of the liquid material is changed from the start of the operation to the imaginary time exceeding the allowable range. In the case of setting the number of slices, the processing time of one wafer 2 or the processing time of one substrate 1 is determined. Coating The time of removal is set, and the number of processing pieces is determined by the predetermined time described above, and is set.

於修正週期設定時，必須考慮因時間經過與溫度變化所產生之液體材料的黏度變化，以下以時間經過僅伴隨產生黏度變化為前提進行說明。When setting the correction period, it is necessary to consider the change in viscosity of the liquid material due to the passage of time and the temperature change. The following description is based on the assumption that the time lapse is accompanied by the change in viscosity.

又，藉由吐出部之溫度調整以控制液體材料的黏度之公知技術，當然亦可併用於本發明中。Further, a known technique for controlling the viscosity of a liquid material by temperature adjustment of the discharge portion can of course be used in the present invention.

(4)修正量之算出(4) Calculation of correction amount

以設定之修正週期算出對應於液體材料之黏度變化所 產生之吐出量的變化所需之修正量。Calculating the viscosity change corresponding to the liquid material by the set correction period The amount of correction required to produce a change in the amount of spitting.

首先，使噴嘴11往重量計8之上方移動，於固定位置吐出液體材料。然後，讀取往重量計8之計量部吐出之液體材料的重量，與(2)中所記憶之參數比對而求出修正量。First, the nozzle 11 is moved above the weight gauge 8, and the liquid material is discharged at a fixed position. Then, the weight of the liquid material discharged into the measuring unit of the weight meter 8 is read, and the correction amount is obtained by comparing with the parameter stored in (2).

作為修正量之算出手段，有下述方法：(甲)測定一定時間吐出時之重量，依據與適當重量的差而算出修正量的方法；(乙)測定吐出至適當重量所需要的時間，依據與之前的吐出時間的差，算出修正量之方法。As means for calculating the correction amount, there are the following methods: (a) measuring the weight at the time of discharge for a predetermined period of time, and calculating the correction amount based on the difference from the appropriate weight; (b) measuring the time required for discharge to an appropriate weight, based on A method of calculating the correction amount from the difference in the previous discharge time.

茲就(甲)與(乙)之手法，以圖6之塗佈圖案之例具體地說明。For the methods of (a) and (b), the example of the coating pattern of Fig. 6 will be specifically described.

首先，由晶片2的大小與晶片2和基板1的間隙，算出液體材料填充所須之必要的適當重量W2。其次，由晶片2之大小與塗佈次數，算出整體塗佈圖案中之塗佈區域12的合計長度L1。接著，算出吐出適當重量W2的液體材料所需要之時間T1。First, the appropriate weight W2 necessary for filling the liquid material is calculated from the size of the wafer 2 and the gap between the wafer 2 and the substrate 1. Next, the total length L1 of the coating region 12 in the entire coating pattern is calculated from the size of the wafer 2 and the number of times of application. Next, the time T1 required for discharging the liquid material of the appropriate weight W2 is calculated.

時間T1有多種計算方法，於此揭示噴射式注料器中之代表性的計算方法二種。其一，由於自噴嘴11吐出液滴之時間點為固定的，故以該時間點與每一滴的重量為依據，算出吐出適當重量W2所需要的時間之方法；其二，實際進行吐出，測定在重量計8上達到適當重量W2為止的時間之方法。There are various calculation methods for time T1, and two representative calculation methods in the jet type injector are disclosed herein. First, since the time point at which the liquid droplets are ejected from the nozzle 11 is fixed, the time required to discharge the appropriate weight W2 is calculated based on the weight of each drop at this time point; and second, the actual discharge is performed and the measurement is performed. A method of reaching the appropriate weight W2 on the weight meter 8.

接著，對於液體材料黏度高的情況(P1P2)中之具體的修正量之計算方法，依據圖3做說明。又，係以噴嘴11之移動速度V為一定速度為前提。Next, for the case where the viscosity of the liquid material is high (P1) The calculation method of the specific correction amount in P2) is explained based on FIG. Further, it is assumed that the moving speed V of the nozzle 11 is a constant speed.

於(甲)的情況，若以變化後之黏度P2吐出與時間T1相同的時間，則重量計8之測定值成為W1。然後，由時間T1與重量W1之關係，算出以變化後之黏度P2吐出與適當重量W2相同的重量所需要的時間T2。以於速度V僅移動時間T2的情況之長度作為複數次塗佈合計時，塗佈區域12之適當長度定為L2。因此，整體塗佈圖案中之塗佈區域12的伸縮量L3為L2-L1。將此伸縮量L3依修正塗佈圖案14的數目做分配。In the case of (a), if the viscosity P2 after the change is discharged for the same time as the time T1, the measured value of the weight 8 becomes W1. Then, from the relationship between the time T1 and the weight W1, the time T2 required to discharge the same weight as the appropriate weight W2 with the changed viscosity P2 is calculated. The length of the case where the speed V is only moved by the time T2 is counted as a plurality of times of coating, and the appropriate length of the coating region 12 is set to L2. Therefore, the amount of expansion and contraction L3 of the coating region 12 in the entire coating pattern is L2-L1. This amount of expansion and contraction L3 is distributed in accordance with the number of correction coating patterns 14.

於(乙)的情況，若測定以變化後之黏度P2吐出與適當重量W2相同的重量所需要的時間，則吐出時間由T1成為T2。以於速度V僅移動時間T2的情況之長度作為複數次塗佈合計時，塗佈區域12之適當長度為L2。因此，合計複數次塗布而考慮時，塗佈區域12的伸縮量L3為L2-L1。將此伸縮量L3依修正塗佈圖案14的數目做分配。In the case of (B), when the time required to discharge the same weight as the appropriate weight W2 by the changed viscosity P2 is measured, the discharge time is changed from T1 to T2. The length of the case where the speed V is only moved by the time T2 is counted as a plurality of times of coating, and the appropriate length of the coating region 12 is L2. Therefore, when considering a plurality of coatings in total, the amount of expansion and contraction L3 of the coating region 12 is L2-L1. This amount of expansion and contraction L3 is distributed in accordance with the number of correction coating patterns 14.

此處，於伸縮量L3非為0之情況，並非經常進行修正，而以計測之吐出量(計測值)之變化或算出之修正量超過容許範圍(例如±10%)的情況下才進行修正為佳。設定容許範圍之修正的較佳形態，於例如本申請人之日本專利申請案特開2001-137756號中有詳述。亦即，設定判斷是否進行修正的容許範圍，只於測定值或修正量(時間、重量或伸縮量)超過前述容許範圍的情況，才修正塗佈圖案14。Here, when the amount of expansion and contraction L3 is not 0, the correction is not always performed, and the correction is performed only when the change in the measured discharge amount (measured value) or the calculated correction amount exceeds the allowable range (for example, ±10%). It is better. A preferred embodiment of the correction of the allowable range is described in detail in Japanese Patent Application Laid-Open No. 2001-137756. In other words, the allowable range for determining whether or not to perform the correction is set, and the coating pattern 14 is corrected only when the measured value or the corrected amount (time, weight, or amount of expansion and contraction) exceeds the allowable range.

(5)修正塗佈圖案之修正(5) Correction of correction coating pattern

於(4)中，當判斷為必須進行吐出量之修正的情況，使修正塗佈圖案14中之塗佈區域12的長度伸長或縮小，以 與其相同的量使修正塗佈圖案14中之非塗佈區域13的長度伸長或縮小，藉此進行修正。In (4), when it is determined that the correction of the discharge amount is necessary, the length of the coating region 12 in the correction coating pattern 14 is elongated or reduced to The same amount is used to lengthen or reduce the length of the non-coated region 13 in the correction coating pattern 14, thereby correcting it.

伸縮量L3係以依修正塗佈圖案14中之塗佈區域12及非塗佈區域13之各自的數目做等分為佳。圖6之整體塗佈圖案之情況，修正塗佈圖案14中之塗佈區域12之伸縮量與L3相同，而修正塗佈圖案14中之非塗佈區域13之伸縮量則成為L3/2。The amount of expansion and contraction L3 is preferably equally divided by the number of each of the coated region 12 and the non-coated region 13 in the modified coating pattern 14. In the case of the overall coating pattern of FIG. 6, the amount of expansion and contraction of the coating region 12 in the correction coating pattern 14 is the same as that of L3, and the amount of expansion and contraction of the uncoated region 13 in the correction coating pattern 14 becomes L3/2.

如上述般，於(3)所設定之修正週期中，或於基板1的種類(大小與形狀)改變時等進行(4)及(5)之步驟，可不受液體材料之經時黏度變化影響而經常地形成最佳之塗佈圖案。As described above, the steps (4) and (5) may be performed in the correction period set in (3) or when the type (size and shape) of the substrate 1 is changed, and may not be affected by the change in viscosity of the liquid material over time. The best coating pattern is often formed.

以下，針對本發明之詳細內容藉由實施例加以說明，惟本發明並不限定於實施例。Hereinafter, the details of the present invention will be described by way of examples, but the invention is not limited to the examples.

(實施例)(Example)

將用以實施本實施例方法的裝置之概略圖示於圖2。A schematic diagram of the apparatus for carrying out the method of the present embodiment is shown in FIG.

首先，將塗佈對象覆晶安裝基板10以移送手段9移送至用以吐出液體材料之噴嘴11的下方。First, the application-coated flip-chip mounting substrate 10 is transferred by the transfer means 9 to the lower side of the nozzle 11 for discharging the liquid material.

具有噴嘴11之注料器6係安裝於XY驅動手段7，可移動至基板10或重量計8上方。又，於基板10之上方邊於XY方向上移動邊塗佈液體材料之動作，亦可藉由XY驅動手段7進行。The injector 6 having the nozzle 11 is attached to the XY driving means 7 and is movable above the substrate 10 or the weight meter 8. Further, the operation of applying the liquid material while moving in the XY direction above the substrate 10 can be performed by the XY driving means 7.

將基板10移送至噴嘴11下方，進行基板10的定位後開始。將噴嘴11之塗佈動作的軌跡之基本塗佈圖案預先記憶於用以控制XY驅動手段7或注料器6等之動作的控 制部(未圖示)內之記憶體等。The substrate 10 is transferred to the lower side of the nozzle 11, and the positioning of the substrate 10 is started. The basic coating pattern of the trajectory of the coating operation of the nozzle 11 is previously stored in the control for controlling the operation of the XY driving means 7 or the injector 6 Memory in the system (not shown).

塗佈完成後，將基板10藉由移送手段9移送到裝置外。然後將下一基板10移入，反覆進行塗佈作業。亦即，移入、塗佈及移出成為一個循環，反覆進行液體材料之塗佈，直至對對象片數之基板10的塗佈完成為止。After the coating is completed, the substrate 10 is transferred to the outside of the apparatus by the transfer means 9. Then, the next substrate 10 is moved in and the coating operation is repeated. That is, the transfer, the coating, and the removal are performed in one cycle, and the application of the liquid material is repeated until the application of the substrate 10 of the target number of sheets is completed.

於達到設定之修正週期時，進行利用液體材料之黏度變化進行之吐出量的修正。When the set correction period is reached, the correction of the discharge amount by the change in the viscosity of the liquid material is performed.

修正量之算出係藉由XY驅動手段7使噴嘴11移動至重量計8上，以重量計8計測吐出時所需要的時間或液體材料之重量。The correction amount is calculated by moving the nozzle 11 to the weight meter 8 by the XY driving means 7, and measuring the time required for discharging or the weight of the liquid material by the weight meter 8.

(甲)依據重量變化之修正(圖4)(A) Correction based on weight change (Figure 4)

自噴嘴11吐出液體材料，吐出時間僅為與之前之基板10上形成整體塗佈圖案所需要的時間T1相同的時間(步驟11)。以重量計8計測吐出之液體材料的重量W1(步驟12)。比較預先對每一整體塗佈圖案之算出並記憶於控制部之適當重量W2與測定重量W1(步驟13)，藉由是否超過容許範圍而判斷是否必須修正(步驟14)。於步驟14中確定為必須修正的情況，由時間T1與W1之關係，算出吐出適當重量W2所必須的時間T2(步驟15)。由時間T2與速度V的關係，算出以複數次塗佈合計考量時，塗佈區域12的長度之合計值的適當長度L2(步驟16)。由複數次塗佈合計而考量之塗佈區域12長度L2、與之前之以複數次塗佈合計考量之塗佈區域12之合計長度L1，算出以複數次塗佈合計考量之伸縮量L3(L1與L2之差)(步驟17)。 使塗佈區域12與非塗佈區域13伸縮而修正修正塗佈圖案14(步驟18)。將T1值更新為T2，將L1值更新為L2(步驟19)。The liquid material is discharged from the nozzle 11, and the discharge time is only the same time as the time T1 required to form the entire coating pattern on the substrate 10 (step 11). The weight W1 of the discharged liquid material is measured by weight 8 (step 12). The calculation of each of the entire coating patterns is performed in advance and is stored in the appropriate weight W2 of the control unit and the measured weight W1 (step 13), and it is determined whether or not the correction is necessary (step 14). In the case where it is determined in step 14 that correction is necessary, the time T2 necessary for discharging the appropriate weight W2 is calculated from the relationship between time T1 and W1 (step 15). From the relationship between the time T2 and the velocity V, an appropriate length L2 of the total value of the lengths of the application regions 12 when the total number of coatings is considered is calculated (step 16). The length L2 of the coating region 12 and the total length L1 of the coating region 12 considered in the total number of coatings in consideration of the total number of coatings in a plurality of times are calculated, and the amount of expansion and contraction L3 (L1) in consideration of the total number of coatings is calculated. The difference from L2) (step 17). The coating region 12 and the non-coating region 13 are expanded and contracted to correct the correction coating pattern 14 (step 18). The T1 value is updated to T2, and the L1 value is updated to L2 (step 19).

又，作為上述步驟之變化，亦可省略步驟13，於伸縮量算出後(步驟17之後)進行步驟14。Further, as a change of the above steps, the step 13 may be omitted, and after the expansion and contraction amount is calculated (after step 17), the step 14 is performed.

(乙)依據時間變化之修正(圖5)(b) Amendment based on time (Figure 5)

自噴嘴11吐出液體材料，至每一整體塗佈圖案預先算出並記憶於控制部之適當重量W2為止(步驟21)，測定吐出所需要的時間T2(步驟22)。將之前之基板10形成整體塗佈圖案所需要之時間T1與計測時間T2比較(步驟23)，依計測時間T2是否超過容許範圍而判定有無修正之必要(步驟24)。於步驟24中認定必須修正的情況，由時間T2與速度V的關係，算出複數次塗佈合計考量之塗佈區域12之適當長度L2(步驟25)。由複數次塗佈合計考量之前之塗佈區域12之合計長度L1、與複數次塗佈合計而考量之塗佈區域12之適當長度L2，算出以複數次塗佈合計考量之伸縮量L3(L1與L2之差)(步驟26)。使塗佈區域12與非塗佈區域13伸縮而修正修正塗佈圖案14(步驟27)。將T1值更新為T2，將L1值更新為L2(步驟28)。The liquid material is discharged from the nozzle 11 until each of the entire coating patterns is calculated and stored in the appropriate weight W2 of the control unit (step 21), and the time T2 required for the discharge is measured (step 22). The time T1 required to form the entire coating pattern of the substrate 10 is compared with the measurement time T2 (step 23), and it is necessary to determine whether or not there is correction according to whether or not the measurement time T2 exceeds the allowable range (step 24). In the case where it is determined in step 24 that the correction is necessary, the appropriate length L2 of the coating region 12 of the plurality of coating total considerations is calculated from the relationship between the time T2 and the velocity V (step 25). The total length L1 of the coating region 12 before the total application of the plurality of coatings and the appropriate length L2 of the coating region 12 measured in consideration of the total number of coatings are calculated, and the amount of expansion and contraction L3 (L1) in a plurality of coatings is calculated. The difference from L2) (step 26). The coating region 12 and the non-coating region 13 are expanded and contracted to correct the correction coating pattern 14 (step 27). The T1 value is updated to T2 and the L1 value is updated to L2 (step 28).

於依上述步驟所做之修正塗佈圖案14之修正中，修正後之塗佈區域12之全長與非塗佈區域13之全長相加所得之修正塗佈圖案14之全長，於修正前後係為相同長度。In the correction of the correction coating pattern 14 obtained in the above step, the total length of the corrected coating pattern 14 obtained by adding the total length of the corrected coating region 12 to the total length of the non-coated region 13 is corrected before and after the correction. Same length.

此處，於塗佈圖案的開始及/或終了位置為非塗佈區域13的情況，亦可控制XY驅動手段7之動作，使噴嘴11 僅於塗佈區域12上移動。此情況下，只有伸縮量L3的部分之噴嘴11的移動時間有改變。就縮短塗佈時間之觀點考量，以整體塗佈圖案的終端為非塗佈區域13之構成為佳。Here, in the case where the start and/or end position of the application pattern is the non-coating region 13, the operation of the XY driving means 7 may be controlled to cause the nozzle 11 Move only on the coating area 12. In this case, only the movement time of the nozzle 11 of the portion of the expansion and contraction amount L3 is changed. From the viewpoint of shortening the coating time, it is preferable that the end of the entire coating pattern is a non-coated region 13 .

整體塗佈圖案之修正係以設定之修正週期自動進行。於液體材料達到使用時間之界限值時、或液體材料用完為止，依設定之修正週期進行修正，繼續塗佈作業。於更換液體材料進行最初的塗佈之時，為修正液體材料品質之參差，亦以於進行塗佈前進行修正為佳。此時，如前述般，只要依據記憶於控制部之資料算出修正量即可，不須要為了修正而進行吐出及測定作業。The correction of the overall coating pattern is automatically performed with the set correction period. When the liquid material reaches the limit value of the use time or the liquid material is used up, it is corrected according to the set correction period, and the coating operation is continued. When the liquid material is replaced for the first coating, it is preferable to correct the quality of the liquid material in order to correct the quality of the liquid material. At this time, as described above, it is only necessary to calculate the correction amount based on the data stored in the control unit, and it is not necessary to perform the discharge and the measurement operation for the correction.

接著，就幾個塗佈圖案之作成例做說明。Next, a description will be given of a few coating patterns.

因黏度變化之吐出量之修正，多數的情況為隨時間經過而黏度增高，必須使吐出量增加，故以下就增加吐出量的情況做說明。In the case where the amount of discharge due to the change in viscosity is corrected, in many cases, the viscosity increases as time passes, and the amount of discharge must be increased. Therefore, the case where the discharge amount is increased will be described below.

基本之整體塗佈圖案的長度與移動速度等，係由填充塗佈對象之半導體晶片2與基板1的間隙所必須之液體材料的重量與晶片2的大小等決定。The length, the moving speed, and the like of the basic overall coating pattern are determined by the weight of the liquid material necessary for filling the gap between the semiconductor wafer 2 to be coated and the substrate 1, the size of the wafer 2, and the like.

圖6至圖18為表示整體塗佈圖案例之說明圖，係由安裝著晶片2的基板1自安裝面一側觀看之圖。圖中之第二次以後之各塗佈圖案，為說明方便起見係描繪成並排狀態，實際上第二次以後之塗佈圖案亦使噴嘴11於與第一次塗佈圖案之相同路徑上移動。6 to 18 are explanatory views showing an example of the entire coating pattern, which is viewed from the mounting surface side of the substrate 1 on which the wafer 2 is mounted. The second and subsequent coating patterns in the figure are depicted as side by side for convenience of description. In fact, the second and subsequent application patterns also make the nozzle 11 on the same path as the first coating pattern. mobile.

圖6為對晶片之一邊重複塗佈二次之情況，第一次之塗 佈圖案16中未進行修正，第二次之塗佈圖案17中則有進行修正。修正塗佈圖案14之第二次之塗佈圖案17，係於一個塗佈區域12的兩端上與二個非塗佈區域13連接而成為一個塗佈圖案。又，塗佈區域12與非塗佈區域13相加之長度係與晶片2之一邊長度相等。另一方面，第一次之塗佈區域16之塗佈區域12的長度係與晶片2一邊之長度相等，且無非塗佈區域13。對應於求出之修正量之伸縮量的變化，於第二次之塗佈圖案17中係使塗佈區域12的兩端或任一端向非塗佈區域13延伸，非塗佈區域13則縮短與塗佈區域12之延伸量相等的量。此時，係以修正塗佈圖案14之全長未改變之方式，進行伸縮。Figure 6 shows the case where the coating is repeated twice on one side of the wafer. No correction is made in the cloth pattern 16, and correction is performed in the second application pattern 17. The second application pattern 17 of the correction coating pattern 14 is joined to the two non-coated regions 13 at both ends of one coating region 12 to form a coating pattern. Further, the length of the application region 12 and the non-coating region 13 is equal to the length of one side of the wafer 2. On the other hand, the length of the coated region 12 of the first coated region 16 is equal to the length of one side of the wafer 2, and the non-coated region 13 is absent. In the second application pattern 17, the two ends or one end of the coating region 12 is extended to the non-coating region 13 in accordance with the change in the amount of expansion and contraction of the correction amount obtained, and the non-coating region 13 is shortened. An amount equal to the amount of extension of the coated region 12. At this time, expansion and contraction are performed so that the entire length of the correction coating pattern 14 is not changed.

此處，圖6之修正塗佈圖案14之第二次之塗佈圖案17中，噴嘴11並不一定於非塗佈區域13上移動。因而，亦可控制XY驅動手段7之動作，使噴嘴11僅於塗佈區域12上移動。Here, in the second application pattern 17 of the correction coating pattern 14 of FIG. 6, the nozzle 11 does not necessarily move on the non-coating region 13. Therefore, the operation of the XY driving means 7 can be controlled to move the nozzle 11 only on the coating area 12.

另一方面，亦可控制XY驅動手段7之動作，使噴嘴11描畫過修正塗佈圖案14之第二次塗佈圖案17的全長。亦即，變化後之塗佈區域12與非塗佈區域13相加之長度為於第二次塗佈圖案17中噴嘴11的移動距離。若進行此種控制，只要不改變噴嘴11之移動速度而保持一定，則修正前與修正後之塗佈時間不會改變。亦可適用於後述圖1以外之圖7至圖18之任一者。On the other hand, the operation of the XY driving means 7 can be controlled so that the nozzle 11 draws the entire length of the second application pattern 17 of the correction coating pattern 14. That is, the length of the changed coated region 12 and the non-coated region 13 is the moving distance of the nozzle 11 in the second coating pattern 17. If such control is performed, the coating time before and after the correction does not change as long as the movement speed of the nozzle 11 is kept constant. It can also be applied to any of FIGS. 7 to 18 other than FIG. 1 described later.

圖7與圖6同樣地為對晶片2的一邊進行二次重覆塗佈的情況，係以第一次之塗佈圖案16進行修正，第二次之 塗佈圖案17不進行修正。進行修正之第一次之塗佈圖案16係與圖6的情況同樣，於一個塗佈區域12的兩端連接二個非塗佈區域13而成為一個修正塗佈圖案14。又，塗佈區域12與非塗佈區域13相加之長度係與晶片2之一邊長度相等。另一方面，第二次之塗佈圖案17之塗佈區域12的長度係與晶片2一邊之長度相等，且無非塗佈區域13。伸縮量的變化，於第一次之塗佈圖案16中係使塗佈區域12的兩端或任一端向非塗佈區域13延伸，非塗佈區域13則縮短與塗佈區域12之延伸量相等的量。以修正塗佈圖案14之全長未改變之方式進行伸縮，此與上述相同。In the same manner as in FIG. 6 , FIG. 7 is a case where the one side of the wafer 2 is repeatedly applied twice, and the first application pattern 16 is corrected, and the second time is corrected. The coating pattern 17 is not corrected. The first application pattern 16 to be corrected is the same as that in the case of FIG. 6, and two non-coating regions 13 are connected to both ends of one application region 12 to form one correction coating pattern 14. Further, the length of the application region 12 and the non-coating region 13 is equal to the length of one side of the wafer 2. On the other hand, the length of the coated region 12 of the second application pattern 17 is equal to the length of one side of the wafer 2, and the non-coated region 13 is absent. The change in the amount of expansion and contraction causes the both ends or either end of the coated region 12 to extend toward the uncoated region 13 in the first application pattern 16, and the uncoated region 13 shortens the amount of stretching with the coated region 12. Equal amount. The expansion and contraction is performed in such a manner that the entire length of the correction coating pattern 14 is not changed, which is the same as described above.

又，雖受液體材料之性質與作業環境而影響，當欲防止液體材料順利地浸透或氣泡混入時，有時會有先塗佈非修正塗佈圖案15為較佳之情況。此情況下，如圖6般係作成先塗佈非修正塗佈圖案15之整體塗佈圖案。Further, depending on the nature of the liquid material and the working environment, it may be preferable to apply the uncorrected coating pattern 15 first when it is desired to prevent the liquid material from smoothly penetrating or mixing bubbles. In this case, as shown in FIG. 6, the entire coating pattern of the uncorrected coating pattern 15 is applied first.

圖8為對晶片2之一邊重複塗佈二次之情況中，二次之塗佈均進行修正之整體塗佈圖案。與圖6及圖7之情況同樣地，係於一個塗佈區域12的兩端與二個非塗佈區域13連接而構成一個修正塗佈圖案14。又，塗佈區域12與非塗佈區域13相加之長度與晶片2之一邊長度相等。對應於求出之修正量之伸縮量的變化，於二次之修正塗佈圖案14為各自使塗佈區域12的兩端或任一端向非塗佈區域13延伸，非塗佈區域13則縮短與塗佈區域12之延伸量相等的量。塗佈區域12之延伸量及非塗佈區域13之縮短量，可於二次的塗佈中為相等，反之，亦可於第一次之塗佈圖 案16與第二次之塗佈圖案17中改變伸縮量。於均等地伸縮的情況，由於進行伸縮之次數為二次，與僅伸縮一次的情況相比較，一次的伸縮量較短(為二次的情況之1/2)。修正塗佈圖案14之伸縮如前所述，係於塗佈圖案16、17之全長不改變下進行。FIG. 8 is an overall coating pattern in which the secondary coating is corrected in the case where the wafer 2 is repeatedly coated twice. Similarly to the case of FIGS. 6 and 7, a modified coating pattern 14 is formed by connecting both ends of one application region 12 to the two non-coated regions 13. Further, the length of the application region 12 and the non-coating region 13 is equal to the length of one side of the wafer 2. In response to the change in the amount of expansion and contraction of the corrected amount, the second modified coating pattern 14 is formed such that both ends or either end of the coating region 12 extends toward the non-coating region 13, and the non-coated region 13 is shortened. An amount equal to the amount of extension of the coated region 12. The amount of extension of the coating region 12 and the amount of shortening of the non-coated region 13 can be equal in the secondary coating, and vice versa. The amount of expansion and contraction was changed in the coating pattern 17 of the case 16 and the second time. In the case of uniformly expanding and contracting, since the number of times of expansion and contraction is two, the amount of expansion and contraction at a time is shorter (1/2 of the case of the second time) as compared with the case of only stretching once. The expansion and contraction of the correction coating pattern 14 is performed as described above, without changing the entire length of the coating patterns 16 and 17.

圖8中，第一次及第二次之塗佈圖案16、17皆為相同的修正塗佈圖案14，惟亦可使第一次與第二次之塗佈區域12與非塗佈區域13之各自長度改變。其等之例示於下述。In FIG. 8, the first and second application patterns 16 and 17 are the same modified coating pattern 14, but the first and second coated regions 12 and uncoated regions 13 may also be used. The respective lengths change. Examples of such are shown below.

圖9為使第一次之塗佈圖案16之非塗佈區域13縮短，使第二次之塗佈圖案17之非塗佈區域13加長所成之整體塗佈圖案之例。作為圖9之變化例，亦可使第二次之塗佈圖案17之非塗佈區域13與塗佈區域12之配置對調。此情況，若使噴嘴11來回動作，較長的非塗佈區域13會成為整體塗佈圖案的終端，故最後使噴嘴11於非塗佈區域13上停止動作，藉此可縮短塗佈時間。FIG. 9 shows an example in which the uncoated region 13 of the first application pattern 16 is shortened, and the uncoated region 13 of the second application pattern 17 is lengthened. As a variation of FIG. 9, the uncoated region 13 of the second application pattern 17 and the configuration of the coating region 12 may be reversed. In this case, if the nozzle 11 is moved back and forth, the long uncoated region 13 becomes the end of the entire coating pattern. Therefore, the nozzle 11 is finally stopped in the non-coating region 13, whereby the coating time can be shortened.

圖10為使第一次及第二次之塗佈圖案16、17對晶片2的一邊之中心線為線對稱的構成。如圖示般，與第一次之塗佈圖案16相比，第二次之塗佈圖案17之非塗佈區域13較長。對應於修正量之伸縮量的變化，可於第一次及第二次之塗佈圖案16、17均等地變化，亦可使第一次與第二次之伸縮量有變化。此等整體塗佈圖案亦如上述般，係於不改變伸縮量全長下進行。FIG. 10 shows a configuration in which the first and second application patterns 16 and 17 are line-symmetric with respect to the center line of one side of the wafer 2. As shown, the non-coated region 13 of the second applied pattern 17 is longer than the first applied pattern 16. The change in the amount of expansion and contraction corresponding to the correction amount may be equally changed in the first and second application patterns 16 and 17, and the amount of expansion and contraction in the first and second times may be changed. These overall coating patterns are also carried out as described above without changing the entire length of the expansion and contraction.

修正塗佈圖案14亦可作成為圖11或圖12之塗佈圖案 所示般。The correction coating pattern 14 can also be used as the coating pattern of FIG. 11 or FIG. As shown.

圖11為將塗佈區域12分割為3個，其間連接著二個非塗佈區域13成為一個修正塗佈圖案14，為有二個此修正塗佈圖案所成之整體塗佈圖案。於伸縮量修正時，於左右端之兩個塗佈區域12係由中央側的端部分別向中央延伸，中央之塗佈區域12則自兩端或任一端延伸。非塗佈區域13係僅縮短與塗佈區域12之伸長量相同的量。Fig. 11 shows an example in which the coating region 12 is divided into three, and the two uncoated regions 13 are connected to each other to form one correction coating pattern 14, and the entire coating pattern is formed by two correction coating patterns. When the amount of expansion and contraction is corrected, the two application regions 12 at the left and right ends extend toward the center from the center-side end portions, and the central application region 12 extends from either or both ends. The uncoated region 13 is only shortened by the same amount as the elongation of the coated region 12.

圖12為一塗佈區域12與一非塗佈區域13連接成一修正塗佈圖案14，並具有二個此修正塗佈圖案所成之整體塗佈圖案。伸縮量之變化係使塗佈區域12之終點側往非塗佈區域13延伸，非塗佈區域13則縮短與塗佈區域12的延伸量相同的量。任一情況中皆如前述般，以整體塗佈圖案之全長未改變之方式進行伸縮。FIG. 12 shows a coating region 12 and an uncoated region 13 joined to form a modified coating pattern 14 and having two integral coating patterns formed by the modified coating pattern. The change in the amount of expansion and contracting causes the end point side of the coating region 12 to extend toward the non-coating region 13, and the non-coating region 13 is shortened by the same amount as the amount of stretching of the coating region 12. In either case, as described above, the entire length of the entire coating pattern was not changed.

不僅對晶片2之一邊進行塗佈的情況，於對晶片2之相鄰二邊L字形地進行塗佈的情況，亦可作成為同樣的塗佈圖案。Not only when one side of the wafer 2 is applied, but also when the adjacent sides of the wafer 2 are L-shaped, the same coating pattern can be used.

圖13係表示對晶片2的二邊進行二次重覆塗佈之情況，於第一次之塗佈圖案16中未進行修正，而於第二次之塗佈圖案17中進行修正。進行修正之第二次之塗佈圖案17，係於一L字形之塗佈區域12的兩端連接二個直線之非塗佈區域13而構成一修正塗佈圖案14。而且，塗佈區域12與非塗佈區域13相加之長度係與晶片2的二邊份的長度相等。對應於求出之修正量之伸縮量的變化，係在第二次之塗佈圖案17中，於塗佈區域12的兩端或任一端 向非塗佈區域13延伸，非塗佈區域13則縮短與塗佈區域12之延伸量相同的量。在整體塗佈圖案之全長未改變下進行伸縮係與沿晶片2的一邊進行塗佈之情況相同。又，修正塗佈圖案14之變化可與沿晶片2的一邊進行塗佈之情況同樣地考量。例如，如圖11般，可將修正塗佈圖案14之塗佈區域12分割為三而構成，亦可如圖8、9及10般，二次的塗佈皆作成為修正塗佈圖案14之構成。Fig. 13 shows a case where the two sides of the wafer 2 are repeatedly coated, and the correction is performed in the coating pattern 16 for the first time, and is corrected in the coating pattern 17 for the second time. The second application pattern 17 to be corrected is formed by connecting two straight non-coated regions 13 at both ends of the L-shaped coated region 12 to form a modified coating pattern 14. Moreover, the length of the coated region 12 and the non-coated region 13 is equal to the length of the two sides of the wafer 2. The change in the amount of expansion and contraction corresponding to the obtained correction amount is in the second application pattern 17 at both ends or either end of the coating region 12. Extending to the non-coated region 13, the non-coated region 13 is shortened by the same amount as the stretching amount of the coated region 12. The expansion and contraction is performed in the same manner as the application of the one side of the wafer 2 without changing the entire length of the entire coating pattern. Further, the change in the correction application pattern 14 can be considered in the same manner as in the case of coating on one side of the wafer 2. For example, as shown in FIG. 11, the coating region 12 of the correction coating pattern 14 may be divided into three, and as shown in FIGS. 8, 9, and 10, the secondary coating may be used as the correction coating pattern 14. Composition.

於三次重覆塗佈之情況亦可同樣地考量。針對例如沿晶片2的一邊進行三次重覆塗佈的情況之塗佈圖案做說明。The same can be considered in the case of three times of repeated coating. A coating pattern in the case where, for example, three times of repeated coating is performed along one side of the wafer 2 will be described.

圖14表示三次塗佈中之一次係作成為修正塗佈圖案14，其餘二次係作成為不進行修正之非修正塗佈圖案15，如此作成整體塗佈圖案。修正塗佈圖案14亦可於第一次至第三次之任一次進行。Fig. 14 shows that one of the three coatings is used as the correction coating pattern 14, and the other secondary is made into the non-correction coating pattern 15 which is not corrected, thus forming an overall coating pattern. The correction coating pattern 14 can also be performed from the first to the third time.

圖15表示三次塗佈中之二次作成為修正塗佈圖案14，其餘一次作成為不進行修正之非修正塗佈圖案15，如此作成為整體塗佈圖案。圖15亦可與圖14的情況同樣地自由組合修正圖案14與非修正圖案15。塗佈區域12之伸長量及非塗佈區域13之縮短量，可為二修正塗佈圖案14中做各自均等的伸縮，反之，亦可於第一次16與第三次之塗佈圖案18改變伸縮量。於均等係伸縮之情況，由於進行伸縮之次數增加，故與僅做一次伸縮之情況相比，每一次之伸縮量較短。Fig. 15 shows that the secondary coating is applied to the correction coating pattern 14 twice, and the other non-correction coating pattern 15 is not corrected. This is the overall coating pattern. In the same manner as in the case of Fig. 14, the correction pattern 14 and the non-correction pattern 15 can be freely combined. The amount of elongation of the coating region 12 and the amount of shortening of the non-coated region 13 can be uniformly stretched in the two modified coating patterns 14, and vice versa, in the first 16 and third coating patterns 18 Change the amount of expansion. In the case of equal expansion and contraction, since the number of times of expansion and contraction is increased, the amount of expansion and contraction is shorter each time than when the expansion and contraction is performed only once.

圖16為三次塗佈中之三次皆作成為修正塗佈圖案14所成之整體塗佈圖案。此情況，塗佈區域12之伸長量及非 塗佈區域13之縮短量以三次塗佈可均等地伸縮，反之亦可分別為不同的伸縮量。Fig. 16 shows that the three times of the three coatings are the entire coating pattern formed by the correction coating pattern 14. In this case, the elongation of the coating region 12 and the non- The amount of shortening of the coating region 13 can be uniformly stretched by three coatings, and vice versa.

以上針對進行複數次塗佈之至三次塗佈的例子用圖式做了說明，四次塗佈以上者亦可同樣地考量。次數愈多，整體塗佈圖案之變化當然也增多。The above description of the application of the plurality of coatings to the three times of coating is illustrated by the drawings, and the above four coatings can be similarly considered. The more the number of times, the more the change in the overall coating pattern is of course increased.

於修正量多，僅以預先準備之修正塗佈圖案14做塗佈區域12之延伸或縮短無法因應之時，加入新的修正塗佈圖案14或將預先準備之修正塗佈圖案14除去以做因應是有效的。沿晶片2之一邊進行塗佈的情況之例係示於圖17及圖18。圖17為加入修正塗佈圖案14之情況，圖18表示修正塗佈圖案14或非修正塗佈圖案15之情況。於加入修正塗佈圖案14之情況，以加入塗佈區域12和非塗佈區域13相加之長度與晶片2的一邊相等之修正塗佈圖案14為原則，此情況，噴嘴11亦可不於非塗佈區域13移動，此點同上所述。另一方面，於除去修正塗佈圖案14之情況，可將預先準備之修正塗佈圖案14直接除去，亦可作為非塗佈區域13而直接殘留。再者，於修正量變多之時，亦可將非修正塗佈圖案15直接除去。In the case where the amount of correction is large, only the correction coating pattern 14 prepared in advance is used to extend or shorten the coating region 12, and a new correction coating pattern 14 is added or the correction coating pattern 14 prepared in advance is removed. The response is valid. An example of the case where the coating is performed along one side of the wafer 2 is shown in FIGS. 17 and 18. FIG. 17 shows the case where the correction coating pattern 14 is added, and FIG. 18 shows the case where the coating pattern 14 or the non-correction coating pattern 15 is corrected. In the case where the correction coating pattern 14 is added, it is a principle to add the correction coating pattern 14 in which the length of the coating region 12 and the non-coating region 13 is equal to the one side of the wafer 2. In this case, the nozzle 11 may not be used. The coating area 13 is moved as described above. On the other hand, when the correction coating pattern 14 is removed, the correction coating pattern 14 prepared in advance can be directly removed, or can be directly left as the non-coating region 13. Further, when the correction amount is increased, the non-correction coating pattern 15 may be directly removed.

圖6至圖18中，就對晶片2之一邊或二邊塗佈液體材料之情況做了說明，惟亦可應用於相鄰三邊U字形塗佈之情況或對晶片2的外周全部塗佈之情況。In FIGS. 6 to 18, the case where the liquid material is applied to one or both sides of the wafer 2 has been described, but it can also be applied to the case of the adjacent three-sided U-shaped coating or the entire periphery of the wafer 2. The situation.

本實施例之注料器並不限定於噴射式，亦可為藉由壓縮空氣而吐出液體材料之氣壓式。又，於氣壓式注料器之情況，較佳者為在噴嘴11與XY驅動手段7之間安裝Z驅動 手段，使噴嘴11可於垂直方向上下移動。The injector of the present embodiment is not limited to the jet type, and may be a pneumatic type in which a liquid material is discharged by compressed air. Further, in the case of a pneumatic type injector, it is preferable to install a Z drive between the nozzle 11 and the XY driving means 7. Means, the nozzle 11 can be moved up and down in the vertical direction.

(產業上之可利用性)(industrial availability)

本發明可實施於用以吐出液體材料之各種裝置。The invention can be implemented in a variety of devices for dispensing liquid materials.

作為於液體材料自吐出部離開之前接觸工件之類型的吐出方式，可例示出：對在前端具有噴嘴之注射筒內之液體材料，以經調整壓力之空氣只施加所要時間之氣壓式；具有平面配管(flat tubing)機構或旋轉配管(rotary tubing)機構之配管(tubing)式；使前端具有噴嘴之貯留容器之內面以密閉滑動之柱塞移動所需量而吐出之柱塞式；藉由螺桿之旋轉以吐出液體材料之螺桿式；以閥之開閉對施加所需壓力之液體材料進行吐出控制之閥式等。As a discharge method of a type in which the liquid material contacts the workpiece before leaving the discharge portion, a liquid material in which the liquid material in the injection cylinder having the nozzle at the tip end is applied with only a desired time; a tubing type of a flat tubing mechanism or a rotary tubing mechanism; a plunger type in which the inner surface of the storage container having the nozzle at the front end is ejected by a sealed sliding plunger; The screw type in which the screw is rotated to discharge the liquid material; the valve type in which the liquid material to which the required pressure is applied is opened and closed by the opening and closing of the valve.

又，作為於液體材料自吐出部離開之後接觸工件之類型的吐出方式，可例示出：以閥體衝擊閥座，使液體材料自噴嘴前端噴飛吐出之噴射式；使柱塞式之柱塞移動，然後急速停止，同樣地自噴嘴前端噴飛吐出之柱塞噴射式；連續噴射方式或需求(demand)方式之噴射式等。Further, as a discharge method of a type in which the liquid material contacts the workpiece after leaving the discharge portion, a spray type in which the valve body impacts the valve seat to eject the liquid material from the tip end of the nozzle, and a plunger type plunger are exemplified. The plunger jet type that moves and then stops rapidly, and similarly ejects from the front end of the nozzle; the continuous jet method or the demand type jet type.

1‧‧‧基板1‧‧‧Substrate

2‧‧‧晶片2‧‧‧ wafer

3‧‧‧電極墊3‧‧‧electrode pads

4‧‧‧凸塊(突起狀電極)4‧‧‧Bumps (protruding electrodes)

5‧‧‧液體材料5‧‧‧Liquid materials

6‧‧‧注料器6‧‧‧Feeder

7‧‧‧XY驅動手段7‧‧‧XY drive

8‧‧‧重量計8‧‧‧ Weight meter

9‧‧‧移送手段9‧‧‧Transfer means

10‧‧‧覆晶安裝基板10‧‧‧Flip chip mounting substrate

11‧‧‧噴嘴11‧‧‧Nozzles

12‧‧‧塗佈區域12‧‧‧ coated area

13‧‧‧非塗佈區域13‧‧‧Uncoated area

14‧‧‧修正塗佈圖案14‧‧‧Revised coating pattern

15‧‧‧非修正塗佈圖案15‧‧‧Uncorrected coating pattern

16‧‧‧第一次塗佈圖案16‧‧‧First coating pattern

17‧‧‧第二次塗佈圖案17‧‧‧Second coating pattern

18‧‧‧第三次塗佈圖案18‧‧‧ Third coating pattern

圖1為用以說明底部填充步驟之側視圖。Figure 1 is a side view for explaining the underfilling step.

圖2為實施例1之裝置之概略立體圖。Fig. 2 is a schematic perspective view of the apparatus of the first embodiment.

圖3為用以說明修正塗佈圖案之修正手法之圖。Fig. 3 is a view for explaining a correction method for correcting a coating pattern.

圖4為用以說明依據重量變化之修正的流程圖。Fig. 4 is a flow chart for explaining the correction according to the change in weight.

圖5為用以說明依據時間變化之修正的流程圖。Figure 5 is a flow chart for explaining the correction according to the time variation.

圖6為表示第1整體塗佈圖案例之說明圖。Fig. 6 is an explanatory view showing an example of a first overall coating pattern;

圖7為表示第2整體塗佈圖案例之說明圖。Fig. 7 is an explanatory view showing an example of a second overall coating pattern;

圖8為表示第3整體塗佈圖案例之說明圖。Fig. 8 is an explanatory view showing an example of a third overall coating pattern;

圖9為表示第4整體塗佈圖案例之說明圖。Fig. 9 is an explanatory view showing an example of a fourth overall coating pattern.

圖10為表示第5整體塗佈圖案例之說明圖。Fig. 10 is an explanatory view showing an example of a fifth overall coating pattern;

圖11為表示第6整體塗佈圖案例之說明圖。Fig. 11 is an explanatory view showing an example of a sixth overall coating pattern.

圖12為表示第7整體塗佈圖案例之說明圖。Fig. 12 is an explanatory view showing an example of a seventh overall coating pattern;

圖13為表示第8整體塗佈圖案例之說明圖。Fig. 13 is an explanatory view showing an example of an eighth overall coating pattern;

圖14為表示第9整體塗佈圖案例之說明圖。Fig. 14 is an explanatory view showing an example of a ninth overall coating pattern;

圖15為表示第10整體塗佈圖案例之說明圖。Fig. 15 is an explanatory view showing an example of a tenth overall coating pattern;

圖16為表示第11整體塗佈圖案例之說明圖。Fig. 16 is an explanatory view showing an example of the eleventh overall coating pattern.

圖17為表示第12整體塗佈圖案例之說明圖。Fig. 17 is an explanatory view showing an example of a twelfth overall coating pattern;

圖18為表示第13整體塗佈圖案例之說明圖。Fig. 18 is an explanatory view showing an example of a thirteenth overall coating pattern.

2‧‧‧晶片2‧‧‧ wafer

12‧‧‧塗佈區域12‧‧‧ coated area

13‧‧‧非塗佈區域13‧‧‧Uncoated area

14‧‧‧修正塗佈圖案14‧‧‧Revised coating pattern

15‧‧‧非修正塗佈圖案15‧‧‧Uncorrected coating pattern

16‧‧‧第一次塗佈圖案16‧‧‧First coating pattern

17‧‧‧第二次塗佈圖案17‧‧‧Second coating pattern

Claims (25)

一種液體材料之填充方法，係作成由沿著工件(work)外周之非修正塗佈圖案、和與非修正塗佈圖案重疊之修正塗佈圖案所構成之整體塗佈圖案，依據整體塗佈圖案，自吐出部吐出液體材料，於基板與載置於其上的工件之間隙利用毛細管現象而填充液體材料者；其特徵在於，修正塗佈圖案係由塗佈區域及非塗佈區域所構成；藉由使修正塗佈圖案之塗佈區域及非塗佈區域伸縮，而進行液體材料吐出量之修正。A method for filling a liquid material is formed by an uncoated coating pattern along an outer circumference of a work and an entire coating pattern formed by a modified coating pattern overlapping the non-corrected coating pattern, according to an overall coating pattern a liquid material is ejected from the ejection portion, and a liquid material is filled in a gap between the substrate and the workpiece placed thereon by capillary action; wherein the correction coating pattern is composed of a coating region and a non-coating region; The liquid material discharge amount is corrected by expanding and contracting the coating region and the non-coating region of the correction coating pattern. 如申請專利範圍第1項之液體材料之填充方法，其中，塗佈區域及非塗佈區域係交替地連續。The method of filling a liquid material according to claim 1, wherein the coated region and the non-coated region are alternately continuous. 如申請專利範圍第1或2項之液體材料之填充方法，其中，於不改變修正塗佈圖案的全長之狀態下，使塗佈區域及非塗佈區域伸縮。The method of filling a liquid material according to claim 1 or 2, wherein the coated region and the non-coated region are expanded and contracted without changing the entire length of the modified coating pattern. 如申請專利範圍第1或2項之液體材料之填充方法，其中，於上述整體塗佈圖案中，最後之塗佈圖案為修正塗佈圖案。The method of filling a liquid material according to claim 1 or 2, wherein in the overall coating pattern, the final coating pattern is a modified coating pattern. 如申請專利範圍第1或2項之液體材料之填充方法，其中，上述整體塗佈圖案係由複數之非修正塗佈圖案與1個以上之修正塗佈圖案所構成。The method of filling a liquid material according to claim 1 or 2, wherein the overall coating pattern is composed of a plurality of non-corrected coating patterns and one or more modified coating patterns. 如申請專利範圍第1或2項之液體材料之填充方法，其中，液體材料吐出量之修正係藉由在整體塗佈圖案中附加新的修正塗佈圖案或除去既有的修正塗佈圖案而施行。The method for filling a liquid material according to claim 1 or 2, wherein the correction of the discharge amount of the liquid material is performed by adding a new correction coating pattern to the entire coating pattern or removing the existing correction coating pattern. Implementation. 一種液體材料之填充方法，係作成由沿著工件外周之 第一修正塗佈圖案、和與第一修正塗佈圖案重疊之第二修正塗佈圖案所構成之整體塗佈圖案，依據整體塗佈圖案，自吐出部吐出液體材料，於基板與載置於其上的工件之間隙利用毛細管現象填充液體材料者；其特徵在於，第一及第二修正塗佈圖案係由塗佈區域及非塗佈區域所構成；藉由使第一及第二修正塗佈圖案之塗佈區域及非塗佈區域伸縮，而進行液體材料吐出量之修正。A method of filling a liquid material, which is formed by the periphery of the workpiece The first correction coating pattern and the entire coating pattern formed by the second correction coating pattern overlapping the first correction coating pattern, and discharging the liquid material from the ejection portion according to the overall coating pattern, and placing the substrate on the substrate The gap between the workpieces thereon is filled with liquid material by capillary phenomenon; wherein the first and second modified coating patterns are composed of a coated region and a non-coated region; by first and second correction coating The coating area and the non-coating area of the cloth pattern are stretched and contracted, and the amount of discharge of the liquid material is corrected. 如申請專利範圍第7項之液體材料之填充方法，其中，塗佈區域及非塗佈區域係交替地連續。The method of filling a liquid material according to claim 7, wherein the coated region and the non-coated region are alternately continuous. 如申請專利範圍第7或8項之液體材料之填充方法，其中，於不改變第一及第二修正塗佈圖案的全長之狀態下，使塗佈區域及非塗佈區域伸縮。The method of filling a liquid material according to the seventh or eighth aspect of the invention, wherein the coated region and the non-coated region are expanded and contracted without changing the entire length of the first and second modified coating patterns. 如申請專利範圍第7或8項之液體材料之填充方法，其中，第一及第二修正塗佈圖案為相同之修正塗佈圖案。The method of filling a liquid material according to claim 7 or 8, wherein the first and second modified coating patterns are the same modified coating pattern. 如申請專利範圍第7或8項之液體材料之填充方法，其中，第一修正塗佈圖案之塗佈區域的長度為第二修正塗佈圖案之塗佈區域的長度以上，於第一修正塗佈圖案之後，進行依據第二修正塗佈圖案之塗佈。The method of filling a liquid material according to claim 7 or 8, wherein the length of the coating region of the first modified coating pattern is longer than the length of the coating region of the second modified coating pattern, and is applied to the first correction coating. After the cloth pattern, coating according to the second correction coating pattern is performed. 如申請專利範圍第7或8項之液體材料之填充方法，其中，上述整體塗佈圖案係由1個以上之第一修正塗佈圖案及複數之第二修正塗佈圖案、或複數之第一修正塗佈圖案及1個以上之第二修正塗佈圖案所構成。The method for filling a liquid material according to claim 7 or 8, wherein the overall coating pattern is composed of one or more first correction coating patterns and a plurality of second correction coating patterns, or a plurality of The coating pattern and one or more second correction coating patterns are corrected. 如申請專利範圍第7或8項之液體材料之填充方法，其中，液體材料吐出量之修正係藉由在整體塗佈圖案中附加新的第一及/或第二修正塗佈圖案，或除去既有的第一及/或第二修正塗佈圖案而施行。The method for filling a liquid material according to claim 7 or 8, wherein the liquid material discharge amount is corrected by adding a new first and/or second correction coating pattern to the entire coating pattern, or removing The existing first and/or second modified coating pattern is applied. 如申請專利範圍第1或7項之液體材料之填充方法，其中，整體塗佈圖案係沿著構成工件的外周之複數的邊所構成。A method of filling a liquid material according to claim 1 or 7, wherein the overall coating pattern is formed along a plurality of sides constituting the outer circumference of the workpiece. 如申請專利範圍第1或7項之液體材料之填充方法，其中，於上述吐出量修正之前後，吐出裝置的移動速度未改變。The method of filling a liquid material according to claim 1 or 7, wherein the moving speed of the discharge device is not changed after the discharge amount is corrected. 如申請專利範圍第1或7項之液體材料之填充方法，其中，測定修正前之吐出時間(T1)之期間所吐出的液體材料重量(W1)，由吐出時間(T1)與重量(W1)的關係算出吐出適當重量(W2)所需之時間(T2)，由時間(T2)與吐出部之移動速度(V)算出塗佈區域之適當全長(L2)，以塗佈區域之適當全長(L2)與修正前之塗佈區域之全長(L1)的差作為修正塗佈圖案之塗佈區域與非塗佈區域各自之全長的伸縮量。The method of filling a liquid material according to claim 1 or 7, wherein the weight (W1) of the liquid material discharged during the discharge time (T1) before the correction is measured, and the discharge time (T1) and the weight (W1) are used. The relationship is calculated as the time (T2) required to discharge the appropriate weight (W2), and the appropriate full length (L2) of the coated region is calculated from the time (T2) and the moving speed (V) of the discharge portion to the appropriate full length of the coated region ( L2) The difference from the total length (L1) of the coating region before the correction is used as the amount of expansion and contraction of the entire length of the coating region and the non-coating region of the correction coating pattern. 如申請專利範圍第1或7項之液體材料之填充方法，其中，測定液體材料吐出至適當重量(W2)的時間(T2)，由時間(T2)與吐出部之移動速度(V)算出塗佈區域之適當全長(L2)，以塗佈區域之適當全長(L2)與修正前之塗佈區域之全長(L1)的差作為修正塗佈圖案之塗佈區域與非塗佈區域各自之全長的伸縮量。The filling method of the liquid material according to claim 1 or 7, wherein the time (T2) at which the liquid material is discharged to the appropriate weight (W2) is measured, and the coating time is calculated from the time (T2) and the moving speed (V) of the discharge portion. The appropriate full length (L2) of the cloth region, the difference between the appropriate total length (L2) of the coating region and the total length (L1) of the coating region before the correction is used as the total length of each of the coating region and the non-coating region of the correction coating pattern. The amount of expansion. 如申請專利範圍第16項之液體材料之填充方法，其中，將吐出時間或吐出重量與黏度的關係記憶於記憶體，於液體材料交換後之步驟中，依據該記憶體之記憶資訊，算出修正塗佈圖案之塗佈區域與非塗佈區域各自之全長的伸縮量。The method for filling a liquid material according to claim 16, wherein the relationship between the discharge time or the discharge weight and the viscosity is memorized in the memory, and in the step after the liquid material exchange, the correction is calculated based on the memory information of the memory. The amount of expansion and contraction of each of the coated region and the non-coated region of the coating pattern. 如申請專利範圍第17項之液體材料之填充方法，其中，將吐出時間或吐出重量與黏度的關係記憶於記憶體，於液體材料交換後之步驟中，依據該記憶體之記憶資訊，算出修正塗佈圖案之塗佈區域與非塗佈區域各自之全長的伸縮量。The filling method of the liquid material according to claim 17, wherein the relationship between the discharge time or the discharge weight and the viscosity is memorized in the memory, and in the step after the liquid material exchange, the correction is calculated according to the memory information of the memory. The amount of expansion and contraction of each of the coated region and the non-coated region of the coating pattern. 如申請專利範圍第16項之液體材料之填充方法，其中，設置判斷是否進行修正之容許範圍，於測定值超出上述容許範圍之情況，對塗佈區域與非塗佈區域各自之全長的伸縮量進行修正。The method of filling a liquid material according to claim 16, wherein the allowable range for determining whether or not to perform the correction is set, and the amount of expansion and contraction of the entire length of the coated region and the non-coated region is determined when the measured value exceeds the allowable range. Make corrections. 如申請專利範圍第17項之液體材料之填充方法，其中，設置判斷是否進行修正之容許範圍，於測定值超出上述容許範圍之情況，對塗佈區域與非塗佈區域各自之全長的伸縮量進行修正。The method of filling a liquid material according to claim 17, wherein the allowable range for determining whether or not to perform the correction is set, and the amount of expansion and contraction of the entire length of the coated region and the non-coated region is determined when the measured value exceeds the allowable range. Make corrections. 如申請專利範圍第1或7項之液體材料之填充方法，其中，進行液體材料之經時黏度變化所伴隨之吐出量的修正。The method of filling a liquid material according to claim 1 or 7, wherein the discharge amount accompanying the change in the viscosity of the liquid material is corrected. 如申請專利範圍第1或7項之液體材料之填充方法，其中，依據使用者作為修正週期所輸入之時間資訊、工件片數或基板之片數，進行液體材料之吐出量的修正。The method of filling a liquid material according to claim 1 or 7, wherein the discharge amount of the liquid material is corrected according to time information input by the user as a correction cycle, the number of workpieces, or the number of substrates. 一種裝置，其特徵為，於具備用以供給吐出的液體材料之液材供給部、具有用以吐出自液材供給部所供給之液體材料的吐出口之吐出部、用以對從吐出口所吐出之液體材料的量進行計量之計量手段、用以使吐出部自由移動之驅動部、以及控制此等動作之控制部之塗佈裝置中，控制部具有施行申請專利範圍第1或7項之液體材料之填充方法的程式。An apparatus provided with a liquid material supply unit for supplying a liquid material to be discharged, a discharge unit having a discharge port for discharging a liquid material supplied from a liquid material supply unit, and a discharge port for discharging from a discharge port The measuring unit for measuring the amount of the liquid material to be discharged, the driving unit for moving the discharge unit, and the coating unit for controlling the operation of the operation, the control unit has the first or seventh application scope of the patent application. A program for filling a liquid material. 一種程式之媒體，其特徵為，該程式係於具備用以供給吐出的液體材料之液材供給部、用以對從吐出口所吐出之液體材料的量進行計量之計量手段、具有將液體材料吐出的吐出口之吐出部、用以使吐出部自由移動之驅動部、以及控制此等動作之控制部之塗佈裝置中，於控制部中施行申請專利範圍第1或7項之液體材料之填充方法。A program medium is characterized in that the program is provided with a liquid material supply unit for supplying a liquid material to be discharged, a measuring means for measuring the amount of liquid material discharged from the discharge port, and a liquid material. In the coating device for discharging the discharge port of the discharge port, the drive unit for moving the discharge unit, and the control unit for controlling the operation, the liquid material of the first or seventh application of the patent application is applied to the control unit. Fill method.
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JP2008193016A (en) 2008-08-21
KR101463488B1 (en) 2014-11-19
CN101606238B (en) 2012-05-23
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JP5019900B2 (en) 2012-09-05
CN101606238A (en) 2009-12-16

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