TWI413205B - A substrate mounting table, a substrate processing apparatus, and a substrate mounting table - Google Patents

Abstract

A substrate table, a substrate processing apparatus and a method for manufacturing the substrate table are provided to restrain the nonuniformity of etching due to a convex portion of the substrate table itself by using a protruded peripheral portion. A substrate table(4) comprises a table body(4a), a plurality of convexities, and a peripheral portion. The plurality of convexities(7) are protruded from a reference surface(5a) of the table body. The peripheral portion(6a) encloses the reference surface. The peripheral portion has a larger height than those of the plurality of convexities, so that a substrate is capable of being loaded on the peripheral portion instead of the convexities. The peripheral portion has an upper flat surface.

Description

Substrate mounting table, substrate processing apparatus, and manufacturing method of substrate mounting table

The present invention relates to a substrate mounting table for mounting a glass substrate or the like for manufacturing a flat panel display (FPD), a method of manufacturing the same, and a substrate processing apparatus for applying dry etching or the like to the substrate using the substrate mounting table.

For example, in the FPD manufacturing process, plasma processing such as dry etching, sputtering, or CVD (Chemical Vapor Deposition) is usually used for the substrate to be processed.

In such a plasma treatment, for example, a pair of parallel plate electrodes (upper electrode and lower electrode) are disposed in a processing chamber, a substrate to be processed is placed on a receiver (mounting table) that operates as a lower electrode, and a processing gas is introduced into the processing chamber. At the same time, high-frequency power is applied to at least one of the electrodes, a high-frequency electric field is formed between the electrodes, and a plasma of the processing gas is formed by the high-frequency electric field to apply plasma treatment to the substrate to be processed.

The surface of the susceptor is actually a gentle curved surface, so there is a slight gap between the substrate and the susceptor. By repeating the plasma treatment, deposits may accumulate on the susceptor. Therefore, the back surface of the substrate to be processed becomes a portion that contacts the susceptor and a portion that contacts the attached material, and the thermal conductivity or conductivity between the portions is different, and sometimes the substrate to be processed is etched. Both (the part of the substrate to be processed has a higher etch rate and the lower part).

Further, when the surface of the substrate to be processed is placed in contact with the susceptor, the substrate to be processed may be adsorbed to the susceptor due to charging of the plasma treatment.

In order to prevent such uneven etching or adsorption of the substrate to be processed, it is proposed to form a convex pattern on the surface of the sintered ceramic covering the electrostatic electrode (for example, Patent Document 1). Further, it has been proposed to form a concave-convex pattern by photo-etching on the surface of the susceptor to reduce the electrostatic force (fixing force), and to easily separate the wafer from the susceptor after the plasma treatment (Patent Document 2).

Furthermore, it is proposed to spray the surface of the susceptor made of aluminum or aluminum alloy to form the uneven portion, and to prevent contamination of impurities, and to remove the steep portion in the convex portion by chemical grinding, electrolytic grinding, or leather (Buff) grinding. The convex part (Patent Document 3).

In any of the prior art, any of the convex portions is flat on the top, so that there is a disadvantage that dust generated by the plasma treatment is easily accumulated. Further, when the top surface of the convex portion is flat and faces the back surface of the substrate to be processed, the contour of the contact surface is transferred to the substrate to be processed to form an etching profile depending on the etching conditions. That is, since the convex portion itself also causes uneven etching, a problem of lowering the productivity of the product occurs. In addition, as a prior art in which the shape of the convex portion is considered, it is proposed to melt the ceramic through the opening plate and to make the upper portion of the convex portion into a square shape (Patent Document 4).

Further, in the case where the susceptor of the convex portion is formed on the surface, since there is a difference in height between the convex portion and the surface other than the convex portion, by repeating the plasma treatment, the deposit is deposited in this portion, and there is still a fear that it will become Causes of uneven etching or particle contamination of the substrate.

[Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Bulletin 313898

As described above, in the prior art, it is proposed that the convex portion is formed on the mounting surface of the substrate mounting table, but the unevenness of the etching is caused by the convex portion itself, or the height difference between the convex portion and the convex portion is There are problems such as the accumulation of deposits and there is room for improvement. That is, in the prior art, there is almost no review of etching unevenness for the shape of the convex portion, or a review of the surface shape other than the convex portion and the convex portion.

Further, when the susceptor is provided with the function of the electrostatic adsorption electrode, the introduction of the heat transfer medium gas between the substrate to be processed and the susceptor is performed. At this time, in order to improve the heat transfer efficiency, it is preferable to form a sealed space between the susceptor and the substrate to be processed. Therefore, in the above Patent Document 4, it is proposed to provide a table portion at the edge portion of the susceptor, but the details of the shape of the table portion or the method for processing the surface of the susceptor including the table portion are not shown.

In view of the above, the first object of the present invention is to provide a substrate mounting table and a method of manufacturing the same, which can prevent uneven processing such as uneven etching caused by the convex portion itself formed on the substrate mounting table. The second problem is to prevent uneven processing or substrate contamination in order to prevent deposition of deposits on the surface of the substrate mounting table. A third object is to provide a substrate mounting table and a method of manufacturing the same that can improve heat conduction efficiency by a heat transfer medium gas.

In order to solve the above problems, a first aspect of the present invention provides a substrate mounting table that mounts a substrate for a substrate processing apparatus, and is characterized in that: a mounting table main body; and a substrate mounting side from the mounting main body a plurality of convex portions formed to protrude from the reference surface; and an edge portion surrounding the reference surface to be in contact with the edge portion of the substrate when the substrate is placed thereon; and the top surface of the convex portion is a rough surface The top surface of the edge portion is a smooth surface.

In the above-described first aspect, the substrate mounting table has a plurality of convex portions that are formed to protrude from the reference surface on the substrate mounting side of the mounting table main body, and that surround the reference surface and contact the edge portion of the substrate when the substrate is placed. The edge portion is formed to protrude from the reference surface; the top surface of the convex portion is a rough surface, and the top surface of the edge portion is a smooth surface; therefore, unevenness in processing such as uneven etching caused by the convex portion can be improved, and The edge portion can be brought into close contact with the substrate, and a sealed space can be formed on the back side of the substrate. For example, when the space is introduced into the heat transfer medium for temperature adjustment, the heat transfer efficiency can be improved.

According to a second aspect of the present invention, a substrate mounting table for mounting a substrate on a substrate processing apparatus includes: a mounting table main body; and a reference surface protruding from a substrate mounting side of the mounting table main body; The plurality of convex portions are formed; the reference surface is a smooth surface, and the top surface of the convex portion is a rough surface.

In the second aspect, the substrate mounting table has a plurality of convex portions that are formed to protrude from the reference surface on the substrate mounting side of the mounting table main body, and the reference surface is a smooth surface, and the top surface of the convex portion is made thick. Therefore, it is possible to improve the unevenness of the etching unevenness caused by the convex portion, and even if a deposit is formed by attaching a reaction product or fine particles to the reference surface, it can be easily removed by simple cleaning or the like. Therefore, unevenness in processing such as uneven etching caused by deposits or substrate contamination can be reduced.

According to a third aspect of the present invention, a substrate mounting table for mounting a substrate on a substrate processing apparatus includes: a mounting table main body; and a reference surface protruding from a substrate mounting side of the mounting table main body; And forming a plurality of convex portions; and surrounding the reference surface, contacting the edge portion of the substrate when the substrate is placed, and forming an edge portion protruding from the reference surface; and the top surfaces of the reference surface and the edge portion are smooth surfaces.

In the third aspect, the substrate mounting table has a plurality of convex portions that are formed to protrude from the reference surface on the substrate mounting side of the mounting table main body, and that surround the reference surface and contact the edge portion of the substrate when the substrate is placed. The edge portion is formed to protrude from the reference surface; the top surface of the reference surface and the edge portion is a smooth surface; therefore, it is possible to prevent a reaction product or particles from adhering to the reference surface to form a deposit, thereby reducing the deposit. The unevenness of the etching unevenness or the contamination of the substrate can be improved, and at the same time, for example, when the space is introduced into the heat transfer medium for temperature adjustment, the heat transfer efficiency can be improved.

According to a fourth aspect of the present invention, there is provided a substrate mounting table for mounting a substrate on a substrate processing apparatus, characterized in that: the mounting table main body; and a reference surface protruding from a substrate mounting side of the mounting table main body; And forming a plurality of convex portions; and surrounding the reference surface, contacting the edge portion of the substrate when the substrate is placed, and forming an edge portion protruding from the reference surface; wherein the top surface of the reference surface and the edge portion is a smooth surface The top surface of the convex portion is a rough surface.

In the fourth aspect, the substrate mounting table has a plurality of convex portions that are formed to protrude from the reference surface on the substrate mounting side of the mounting table main body, and that surround the reference surface to contact the edge portion of the substrate when the substrate is placed. The edge portion is formed to protrude from the reference surface; the top surface of the convex portion is formed as a rough surface, so that unevenness in processing such as uneven etching caused by the convex portion can be improved. In addition, since the top surface of the reference surface and the edge portion is a smooth surface, it is possible to prevent the deposition of the reference surface, the reaction product or the particles, and the like, and to reduce the uneven etching caused by the deposit by simple cleaning. Unevenness or contamination of the substrate can be achieved, and the edge portion can be brought into close contact with the substrate, and a sealed space can be formed on the back side of the substrate. For example, when the space is introduced into the heat transfer medium for temperature adjustment, the heat transfer efficiency can be improved.

In the substrate mounting table according to the first, second or fourth aspects, it is preferable that the surface roughness Ry (maximum height) of the top surface of the convex portion is 8 μm or more.

In the substrate mounting table according to any one of the second to fourth aspects, it is preferable that the surface roughness Ra (arithmetic mean roughness) of the reference surface is 1.5 μm or less.

In the substrate mounting table according to the first, third or fourth aspect, it is preferable that the surface roughness Ra (arithmetic mean roughness) of the top surface of the edge portion is 1.5 μm or less. In this case, it is preferable that the substrate mounting stage functions as an electrostatic adsorption electrode, and the mounting table main body may have a base material, a first dielectric material film formed on the base material, and the first laminated body. a conductive layer on the dielectric material film, and a second dielectric material film laminated on the conductive layer. Furthermore, it is also possible to have a heat transfer medium flow path which is provided through the substrate stage and supplies a heat transfer medium toward the back surface of the substrate.

According to a fifth aspect of the invention, there is provided a substrate processing apparatus comprising the substrate mounting table according to any one of the first to fourth aspects. The substrate processing apparatus may be a manufacturer for a flat panel display, and in particular may be a plasma etching apparatus that performs a plasma etching treatment on a substrate.

According to a sixth aspect of the present invention, in a method of manufacturing a substrate mounting table, a method of manufacturing a substrate mounting table on which a substrate is placed during processing on a substrate, wherein the method comprises: forming a dielectric material film on a surface of the substrate a dielectric material film forming process; and a polishing process for polishing the surface of the dielectric material film; and a surface of the dielectric material film to be polished, leaving an edge portion for cutting to form a recessed cutting process; And a convex portion forming process in which the plurality of openings are opened by the oil to dissolve the ceramic by the opening, and the plurality of convex portions formed by the ceramic are formed.

According to the sixth aspect, by using the melt-dissolving method in which the opening plate is a mask, the top surface of the convex portion can be made rough with a short processing time and a small processing cost, and the surface other than the convex portion is smooth. Substrate mounting table.

In the sixth aspect, the convex portion forming process includes: a process of placing an opening plate having a plurality of openings on the dielectric material film; and the dielectric property exposed in an opening of the opening plate a material film, a process of Blast treatment; and a process of dissolving the ceramic on the dielectric material film through the opening plate; and a process of removing the opening plate.

In this way, after the dielectric material film is subjected to Blast treatment through the opening plate, the ceramic is sprayed on the dielectric material film through the opening plate, whereby the dielectric forming the convex portion can be formed. The roughening of the material film, the adhesion of the convex portion and the dielectric material film is achieved by the anchor effect; and the surface of the substrate other than the portion of the convex portion is formed, and the mechanical grinding process or the mechanical cutting process can be left. A smooth surface formed.

Further, in the sixth aspect, the dielectric material film forming process may include: a process of forming a first dielectric material film on a substrate; and a process of forming a conductive layer on the first dielectric material film; And a process of forming a second dielectric material film on the conductive layer.

Further, in the sixth aspect, it is preferable that the polishing process is performed so that the surface roughness Ra (arithmetic mean roughness) is 1.5 μm or less. In the above-described cutting process, it is preferable to perform cutting or polishing by setting the surface roughness Ra (arithmetic mean roughness) of the bottom surface of the concave portion to 1.5 μm or less. Further, in the above-described convex portion forming process, the surface roughness Ry (maximum height) of the emitting surface of the convex portion formed by the melt-spraying is set to be 8 μm or more, and the solvent is sprayed.

According to the present invention, it is possible to prevent the processing unevenness of the etching unevenness caused by the substrate mounting table or the substrate contamination caused by the deposit.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a cross-sectional view showing an example of a processing apparatus as a receiver of a substrate stage, which is an embodiment of the present invention, that is, a plasma etching apparatus. This plasma etching apparatus 1 is a cross-sectional view of a device for performing specific processing of the glass substrate G for FPD, and is configured as a capacitive coupling type parallel plate plasma etching apparatus. Here, as the FPD, a liquid crystal display (LCD), a light emitting diode (LED) display, an electroluminescence (EL) display, a fluorescent display (VFD), and a plasma display are exemplified. Panel (PDP), etc. Further, the processing apparatus of the present invention is not limited to the plasma etching apparatus.

This plasma etching apparatus 1 has, for example, a chamber 2 whose surface is made of an aluminoxy treatment (anodizing treatment) and formed of aluminum into a square tube shape. A square columnar insulating plate 3 made of an insulating material is provided on the bottom of the chamber 2, and a susceptor 4 for placing the substrate glass to be processed, that is, the LCD glass substrate G, is further provided on the insulating plate 3. Moreover, the insulating member 8 is provided in the outer periphery and the upper surface of the base material 4a of the susceptor 4, and the edge of the dielectric material film 5 is not provided.

The susceptor 4 is connected to a power supply line 23 for supplying a high-frequency power supply, and the power supply line 23 is connected to the matching unit 24 and the high-frequency power source 25. From the high-frequency power source 25, high-frequency power of, for example, 13.56 MHz is supplied to the susceptor 4.

Above the susceptor 4, a shower head 11 which is parallel to the susceptor 4 and operates as an upper electrode is provided. The shower head 11 is supported on the upper portion of the chamber 2, and has an internal space 12 therein, and a plurality of ejection holes 13 for ejecting a processing gas are formed on the surface opposite to the susceptor 4. The shower head 11 is grounded and together with the susceptor 4 constitutes a pair of parallel plate electrodes.

A gas introduction port 14 is provided on the upper surface of the shower head 11, and a gas supply port 15 is connected to the process gas supply pipe 15. The process gas supply pipe 15 is connected to the process gas supply source 18 via a valve 16 and a flow rate controller 17. From the processing gas supply source 18, a gas required for etching is supplied. As the processing gas, a halogen-based gas, an O ₂ gas, an Ar gas, or the like, which is generally used in the field, can be used.

An exhaust pipe 19 is connected to the bottom of the side wall of the chamber 2, and the exhaust pipe 19 is connected to the exhaust device 20. The exhaust device 20 is provided with a vacuum pump such as a turbo molecular pump, and is configured to attract the vacuum in the chamber 2 to a specific decompression environment. Further, the side wall in the chamber 2 is provided with a substrate loading/unloading port 21, and a gate valve 22 for opening and closing the substrate loading/unloading port 21; and when the gate valve 22 is opened, the substrate G is adjacent to the load fixing chamber (not shown). Handling between.

As shown in Fig. 1, a substrate 4, which is a substrate mounting table according to an embodiment of the present invention, has a base material 4a and a dielectric material film 5 provided on the base material 4a. The edge of the upper surface of the dielectric material film 5 is provided with a height difference to form the land portion 6. Further, on the upper surface of the dielectric material film 5, a plurality of convex portions 7 are formed in a protruding shape, and the convex portions 7 are surrounded by the land portion 6. Further, for the purpose of alleviating the thermal force caused by the difference in thermal expansion coefficient between the substrate 4a and the dielectric material film 5, an intermediate thermal expansion coefficient may be provided between the substrate 4a and the dielectric material film 5. One or more intermediate layers made of the material.

Fig. 2 is a plan view of the susceptor; Fig. 3 is a cross-sectional view taken along line III-III' of the second figure. Further, Fig. 4 is an enlarged view showing an enlarged main portion of the structure in the vicinity of the surface of the susceptor 4. The convex portion 7 is formed on the substrate G on the dielectric material film 5 in the same distribution, and the substrate G is placed on the convex portion 7. Thereby, the convex portion 7 functions to separate the spacer between the susceptor 4 and the substrate G, and the attachment attached to the susceptor 4 is prevented from adversely affecting the substrate G.

As shown in Fig. 4, in the susceptor 4 of the present embodiment, the convex portion 7 is formed in a table shape as viewed in cross section, and the top surface 7a is roughened so that it can be brought into point contact with the substrate G.

More specifically, the top surface 7a of the convex portion 7 has a surface roughness Ry of 8 μm or more and preferably 9 μm or more and 15 μm or less. Here, Ry is the maximum height specified by JIS B0601-1994, the reference length is determined from the roughness curve in the mean line direction, and the sum of the highest peak height and the lowest valley depth in the reference length is expressed in micrometers (μm). value. By setting the surface roughness Ry of the top surface 7a of the convex portion 7 to 8 μm or more, the top surface 7a of the convex portion 7 is in point contact with the back surface of the substrate G, and the occurrence of etching unevenness can be prevented during etching.

The height h _{1 of the} convex portion 7 is preferably 30 to 80 μm. When the amount of the adhering matter attached to the susceptor 4 is considered, by setting the height of the convex portion 7 to μm or more, it is possible to sufficiently prevent the deposit from adversely affecting the substrate G. On the other hand, if the height h _{1 of the} convex portion 7 exceeds 80 μm or more, in addition to the decrease in electrostatic adsorption force, there is a problem that the strength of the convex portion 7 is lowered, or the etching rate of the substrate G is lowered, or as will be described later. The problem that the dissolution time is long when the convex portion 7 is formed by the solvent spray.

Further, the diameter D of the top surface 7a of the convex portion 7 is preferably 0.5 to 1 mm, and the interval (the connecting distance between the center points of the adjacent two convex portions 7) is preferably 5 to 20 mm. It is preferable that such a convex portion 7 is formed on the surface of the dielectric material film 5 by, for example, 6,000 or more. However, the convex portion 7 may be formed by the interval at which the substrate G portion contacts the reference surface 5a. Therefore, the above figures are for reference only. Further, the arrangement pattern of the convex portions 7 is not particularly limited, and may be, for example, a zigzag matrix arrangement.

The convex portion 7 is made of a ceramic which is generally known as a material having high durability and corrosion resistance. The ceramic constituting the convex portion 7 is not particularly limited, and typically includes an insulating material such as Al ₂ O ₃ , Zr ₂ O ₃ or Si ₃ N ₄ , but may have a certain degree of conductivity as SiC. The convex portion 7 is preferably formed by a solvent spray as will be described later.

Further, the portion other than the convex portion on the upper portion of the susceptor 4, that is, the top surface 6a of the table portion 6 and the reference surface 5a of the dielectric material film 5 are smooth surfaces. Specifically, the top surface 6a of the land portion 6 and the reference surface 5a of the dielectric material film 5 have a surface roughness Ra of 1.5 μm or less and preferably 0 or more and 1.5 μm or less. Here, Ra is determined by the arithmetic mean roughness specified in JIS B0601-1994, and the reference length is determined from the roughness curve from the average curve direction, and the total length from the average line to the measured roughness curve is obtained. The absolute value of the deviation is expressed by the average value in micrometers (μm).

When the surface roughness Ra of the top surface 6a of the table portion 6 is 1.5 μm or less, when the substrate G is placed on the susceptor 4, the edge portion of the substrate G can be adhered to the top surface 6a of the table portion 6. . Therefore, a sealed space can be formed between the substrate G and the reference surface 5a of the susceptor 4. Thereby, in particular, when the heat transfer medium gas is supplied to the back surface of the substrate G to perform temperature control, the heat transfer medium gas can be sealed in the space on the back side of the substrate G, so that the heat transfer efficiency can be improved.

In addition, when the surface roughness Ra of the reference surface 5a of the dielectric material film 5 is 1.5 μm or less, it is possible to prevent deposits from accumulating on the lower reference surface 5a than the convex portion 7.

In other words, when the reference surface 5a of the susceptor 4 is a rough surface, the etching process is repeated, and the material or the like which is etched from the substrate G adheres and accumulates on the reference surface 5a of the dielectric material film 5, and is deposited; In the present embodiment, since the reference surface 5a is a smooth surface, it is difficult to form a reaction product or particles due to etching, and it is difficult to form a deposit. Further, even if deposits are formed, the convex portion 7 can achieve the task of the spacers, so that it is difficult for the deposits to contact the substrate G, and it is possible to prevent the substrate G from being unevenly etched or the substrate G being adsorbed on the susceptor 4 or the like. .

The height h _{2 of the} table portion 6 is preferably a height equal to or slightly higher than the height of the convex portion 7 from the viewpoint of forming the sealed space between the substrate G and the reference surface 5a from the surrounding convex portion 7. It can be formed by machining or grinding.

The dielectric material film 5 is not limited to a material as long as it is composed of a dielectric material, and includes not only a highly insulating material but also a conductive material having a degree of permitting charge movement. The dielectric material film 5 is preferably made of ceramics from the viewpoint of durability and corrosion resistance. The ceramic at this time is not particularly limited, and as the case of the convex portion 7, an insulating material such as Al ₂ O ₃ , Zr ₂ O ₃ or Si ₃ N _{4 is} typically used, but it may be a certain one like SiC. A degree of conductivity. Such a dielectric material film 5 may be formed, for example, by melt-spraying.

The base material 4a is a material that supports the dielectric material film 5, and is made of, for example, a metal such as aluminum or a conductor such as carbon.

Next, referring to Fig. 1, the processing operation of the plasma etching apparatus 1 will be described.

First, after the gate valve 22 is opened, the substrate G of the object to be processed is loaded into the chamber 2 through the substrate loading/unloading port 21 from the load-fixing chamber (not shown), and is placed on the susceptor 4, that is, formed. The convex portion 7 of the dielectric material film 5 on the surface of the fish susceptor 4 and the land portion 6. At this time, the transfer of the substrate G is performed by penetrating the inside of the susceptor 4 to be a lifting pin (not shown) that can protrude from the susceptor 4. Thereafter, the gate valve 22 is closed, and the vacuum in the chamber 2 is sucked by the exhaust device 20 to a specific degree of vacuum.

Thereafter, the valve 16 is opened, and the flow rate of the processing gas is adjusted from the processing gas supply source 18 by the flow rate controller 17, and is introduced into the internal space 12 of the shower head 11 through the processing gas supply pipe 15 and the gas introduction port 14, and further through the ejection hole 13. The substrate G is evenly ejected to maintain the pressure in the chamber 2 at a specific value.

In this state, high-frequency power is applied from the high-frequency power source 25 to the susceptor 4 via the matching unit 24, and a high-frequency electric field is generated between the susceptor 4 serving as the lower electrode and the shower head 11 as the upper electrode to dissociate the processing gas. The plasma is plasmalized, thereby applying etching to the substrate G.

After the etching treatment is applied as described above, the application of the high-frequency power from the high-frequency power source 25 is stopped, the gas introduction is stopped, and the pressure in the chamber 2 is then reduced to a specific pressure. Then, the gate valve 22 is opened, and the substrate G is carried out from the chamber 2 to the load fixing chamber (not shown) via the substrate loading/unloading port 21, thereby completing the etching process of the substrate G.

Next, a method of forming the land portion 6 and the convex portion 7 on the dielectric material film 5 will be described with reference to FIGS. 5 and 6 in general. In the present embodiment, the top surface 7a of the convex portion 7 is a rough surface, and the portion other than the convex portion 7, that is, the reference surface 5a of the dielectric material film 5 or the top surface 6a of the mesa portion 6 is a smooth surface. Therefore, the following manufacturing methods are employed.

First, it is prepared to laminate the dielectric material film 5 on the substrate 4a. The dielectric material film 5 is formed by melt-spraying the above-mentioned ceramic material, and the melt-dissolving emission surface 5b is exposed. Further, when the dielectric material film 5 is formed by melt-dissolving, pores may be formed in some cases, but in order to ensure the withstand voltage performance, it is preferable to apply a sealing treatment.

As shown in FIG. 6( a ), the above-described emission surface 5 b is mechanically polished by a polishing apparatus 100 such as a gate type grinder to perform smoothing on average (step S11 ). In the polishing process, polishing is performed so that the surface roughness Ra of the emitting surface 5b becomes 1.5 μm or less.

Next, as shown in Fig. 6(b), the edge portion of the smoothed dielectric material film 5 is left, and the inner side is machined by a polishing means 101 such as a gate type grinder (step S12). By this cutting process, the central portion of the dielectric material film 5 is cut into a concave shape, the bottom of the concave portion is exposed to the reference surface 5a, and the land portion 6 is formed at the edge. The reference surface 5a is a smooth surface formed by cutting, and has a surface roughness Ra of 1.5 μm or less. On the other hand, the top surface of the table portion 6 still leaves the polished surface of Fig. 6(a), so the surface roughness Ra is 1.5 μm or less.

Next, as shown in Fig. 6(c), the opening plate 102 having a plurality of circular openings is provided on the dielectric material film 5 (step S13). The cover member, that is, the opening plate 102, is provided with a through hole corresponding to the size and arrangement of the plurality of convex portions 7. As such an opening plate 102, for example, a metal plate having a thickness of about 0.3 to 0.5 mm can be used, and specifically, a stainless steel plate can be used. In the state in which the opening plate 102 is provided, the air blasting treatment is performed to roughen the smooth surface of the dielectric material film 5 exposed in the opening of the opening plate 102 (step S14). This roughening has a fixing effect in the solvent spraying of the next process, and is performed in order to firmly adhere the convex portion 7 formed by the solvent spray to the dielectric material film 5.

In Fig. 6(d), the ceramic material is sprayed from the opening plate 102 by the solvent spray gun 103. Thereby, the convex portion 7 is formed in the opening of the opening plate 102 (step S15). When the melt-spraying of the convex portion 7 is formed, the surface roughness Ry of the top surface 7a can be made rough by 8 μm or more by selecting a solvent spray condition such as a particle diameter of the spray spray and a number of spray passes. Further, if the material of the dielectric material film 5 is the same as the material of the convex portion 7, the two are preferably firmly bonded. However, if the combination of the two is sufficient within the temperature range of the treatment, the materials of the two may be different.

Then, as shown in Fig. 6(e), the land portion 6 and the convex portion 7 are formed on the surface of the dielectric material film 5 by removing the opening plate 102 (step S16). The top surface 7a of the convex portion 7 thus formed is a surface to be sprayed and sprayed, and is roughened to have a surface roughness Ry of 8 μm or more. On the other hand, the top surface 6a of the table portion 6 is a smooth surface formed by mechanical polishing, and the reference surface 5a is a smooth surface formed by cutting, and the surface roughness Ra is also 1.5 μm or less. According to the above manufacturing method, the top surface 7a of the convex portion 7 is roughened, and the top surface 6a of the table portion 6 and the reference surface 5a are smooth surfaces of the susceptor 4, which can be processed with a shorter processing time and less processing. Cost to manufacture.

Fig. 7 is a cross-sectional view showing the surface roughness of the convex portion formed on the surface of the susceptor 4.

Samples A to C of Fig. 7 are cross-sectional curves when the convex portion 7 (and the land portion 6) were formed by the prior manufacturing method. First, the sample A is placed on the surface of the dielectric material film 5 on which the surface of the substrate 4a is spray-dissolved, and the opening plate 102 is placed, and a sample of the convex portion 7 is formed by solvent spray. In the sample A, both the top surface 7a and the reference surface 5a of the convex portion 7 are the emission surfaces formed by the solvent spray, so that both sides are roughened as shown by the cross-sectional curve. Therefore, it is difficult to cause uneven etching due to the convex portion 7. However, by repeating the plasma etching, the reference surface 5a is likely to adhere to the reaction product or the fine particles, and the deposit is likely to be formed.

The sample B is a sample in which the convex portion 7 is directly formed by cutting on the surface of the dielectric material film 5 which is spray-dissolved on the surface of the substrate 4a. At this time, since the reference surface 5a is a smooth surface formed by machining, it is difficult to form a deposit, but it can be seen from the cross-sectional curve that the surface 7a of the convex portion 7 is almost completely a table shape, and the top surface 7a is smooth. Therefore, it is easy to cause uneven etching.

Further, in the modified example of the sample C-series B, after the convex portion 7 is formed by the cutting of the dielectric material film 5, the solvent spray device is spray-discharged on the surface, for example, only on the surface, on the surface. A sample of a thin sprayed film is formed. In the sample C, both the top surface 7a of the convex portion 7 and the reference surface 5a are also the emission surfaces formed by the melt-spraying, so that both sides are roughened as shown by the cross-sectional curve. Therefore, it is difficult to cause uneven etching due to the convex portion 7. However, by repeating the plasma etching, the reference surface 5a is likely to adhere to the reaction product or the fine particles, and the deposit is likely to be formed.

The sample D in Fig. 7 is a cross-sectional curve when the table portion 6 and the convex portion 7 are formed by the manufacturing method shown in Figs. 5 and 6, and is roughened with respect to the top surface 7a of the convex portion 7. It is found that the top surface 6a of the table portion 6 and the reference surface 5a are smooth surfaces. Therefore, uneven etching caused by the convex portion 7 can be suppressed, and generation of deposits in the reference surface 5a can be avoided. Further, since the smooth top surface 6a of the stage portion 6 is in close contact with the back surface of the substrate G, the temperature control efficiency when the heat transfer medium gas is introduced into the back space of the substrate G can be improved.

As described above, in the sample D formed by the manufacturing method of the present embodiment, since the top surface 7a of the convex portion 7 and the top surface 6a of the land portion 6 and the reference surface 5a are considered, it is difficult to cause uneven etching or Problems such as deposits can ensure the reliability of the etching process in the plasma etching apparatus 1. On the other hand, in the samples A to C formed by the prior manufacturing method, the top surface 7a of the convex portion 7 and the top surface 6a of the land portion 6 are not combined with the shape of the reference surface 5a (either a rough surface or a smooth surface). As appropriate, it is understood that problems such as uneven etching or deposits are likely to occur.

Next, the relationship between the surface roughness of the top surface 7a of the convex portion 7 and the etching unevenness is shown. The surface roughness was evaluated by three methods of Ra (arithmetic mean roughness), Rz (ten point average roughness), and Ry (maximum height). Here, Rz is a ten-point average roughness defined by JIS B0601-1994, and the reference length is determined from the roughness curve in the average line direction, and the top elevation from the highest top to the fifth is within the reference length. The average value of the absolute value, and the absolute value of the absolute value of the bottom elevation from the lowest trough to the fifth, and the sum in micrometers (μm).

Fig. 8 shows the results of the occurrence of uneven etching in the surface roughness and the plasma etching treatment for the five types of susceptors (samples 1 to 5) having different surface roughnesses of the top surface 7a of the convex portion 7. ○× under each sample number indicates whether or not etching unevenness occurs, ○ means “no etching unevenness occurs”, and × means “etching unevenness occurs”.

From Fig. 8, it can be seen that in the group in which the etching unevenness occurred (sample 2 and sample 3), and in the group in which the etching unevenness did not occur (sample 1, sample 4, sample 5), the difference was clearly observed. It is the surface roughness Ry. Further, in the sample of Ry of 8 μm or more, no etching unevenness occurred. Therefore, the evaluation index of the surface roughness of the top surface 7a of the convex portion 7 is preferably Ry, and Ry is 8 μm or more in order to prevent etching unevenness.

Next, other embodiments will be described with reference to Figs. 9 and 10. The susceptor 40 of the present embodiment has an electrostatic chuck function, and as shown in an enlarged view of FIG. 10, the first dielectric material film 51 is sequentially laminated on the substrate 4a, and a conductive material such as metal is used. The susceptor 40 is configured by a conductive layer 52 that functions as an electrostatic electrode layer and a second dielectric material film 53. On the surface of the second dielectric material film 53, a plurality of convex portions 7 and a land portion 6 are formed to protrude from the reference surface 53a. Then, a DC voltage is applied to the conductive layer 52 by a DC power source (not shown), whereby the substrate G can be electrostatically adsorbed by Coulomb force. Further, the method of forming the first dielectric material film 51, the conductive layer 52, and the second dielectric material film 53 is not limited, but it is preferably formed by solvent spray.

Further, the through base material 4a, the first dielectric material film 51, the conductive layer 52, and the second dielectric material film 53 are formed, and the reference surface 53a of the second dielectric material film 53 has a plurality of discharge ports. Thermal medium flow path 41. Thereby, the space between the convex portions 7 on the back side of the substrate G can be filled with a heat-conductive gas such as helium gas, and the substrate G can be cooled evenly, and the temperature of the substrate G can be averaged, so that plasma treatment such as etching can also be performed. The substrate is carried out on average. Further, by forming the land portion 6 formed at the edge portion, it is possible to suppress the diffusion of the heat-conductive gas to a range other than the susceptor, so that the heat transfer efficiency can be improved.

Similarly to the susceptor 4 of the first embodiment, in the susceptor 40 of the present embodiment, the top surface 7a of the convex portion 7 is also a rough surface, and the surface roughness Ry is 8 μm or more, and preferably 9 μm or more and 15 μm or less.

Further, the portion other than the convex portion on the upper surface of the susceptor 40, that is, the top surface 6a of the table portion 6 and the reference surface 53a of the second dielectric material film 53 are the same smooth surface. Specifically, the surface roughness Ra of the top surface 6a of the land portion 6 and the reference surface 53a of the second dielectric material film 53 is 1.5 μm or less, and preferably 0 or more and 1.5 μm or less.

The first dielectric material film 51 and the second dielectric material film 53 are the same as the dielectric material film 5, and are not limited to materials as long as they are made of a dielectric material, and include not only a high insulating material but also a material having a high dielectric material. The conductivity of the extent to which the charge is allowed to move is preferably made of ceramics from the viewpoint of durability and corrosion resistance. The ceramic material is not particularly limited, and examples thereof include insulating materials such as Al ₂ O ₃ , Zr ₂ O ₃ , and Si ₃ N ₄ . However, those having a certain degree of conductivity as SiC may be used. Further, the first dielectric material film 51 and the second dielectric material film 53 may be the same material or different materials. Further, for the purpose of alleviating the thermal force caused by the difference in thermal expansion coefficient between the base material 4a and the first dielectric material film 51, it is possible to provide such a relationship between the base material 4a and the first dielectric material film 51. One or more intermediate layers composed of a material having an intermediate thermal expansion coefficient.

The function and manufacturing method of the convex portion 7 and the table portion 6 are the same as those in the first embodiment. In the present embodiment, the substrate G is electrostatically adsorbed by an electrostatic chuck, and while the temperature is adjusted by the heat transfer medium, the processing of the basic G, for example, the etching process, is performed with high precision. Further, even if the structure is not provided, the base material 4a of the susceptor 4 shown in Fig. 1 can be used as an electrostatic chuck of the electrostatic chuck, thereby operating as an electrostatic chuck.

The susceptor 40 shown in Fig. 9 above can be provided in a plasma etching apparatus having the same structure as that of the plasma etching apparatus 1 shown in Fig. 1.

Further, the present invention is not limited to the above embodiment, and various modifications are possible.

For example, in the first embodiment, an RIE type capacitive coupling type parallel plate plasma etching apparatus that applies high frequency power to the lower electrode is exemplified, but it is not limited to an etching apparatus, and can be applied to other plasmas such as ashing and CVD film formation. The processing device may be in the form of supplying high frequency power to the upper electrode or may be limited to a capacitive coupling type inductive coupling type.

Further, the substrate to be processed is not limited to the glass substrate G for FPD, and may be a semiconductor wafer.

Further, the size, the number, and the arrangement top of the convex portion 7 are not limited, and can be appropriately selected in accordance with the processing contents.

1. . . Processing device (plasma etching device)

2. . . Room (processing room)

3. . . Insulation board

4. . . Receptor

5. . . Dielectric material film

5a. . . Datum

6. . . Taiwan Department

6a. . . Top surface

7. . . Convex

7a. . . Top surface

11. . . Shower head (gas supply means)

20. . . Exhaust

25. . . High frequency power supply (plasma generation means)

40. . . Receptor

41. . . Thermal media flow path

51. . . First dielectric film

52. . . Conductive layer

53. . . Second dielectric film

[Fig. 1] An embodiment of the present invention is an example of a processing apparatus provided as a receiver of a substrate stage, that is, a cross-sectional view of the plasma etching apparatus.

[Fig. 2] Top view of the susceptor.

[Fig. 3] A cross-sectional view taken along line III-III' of the second figure.

[Fig. 4] An enlarged view of the main part of the susceptor section.

[Fig. 5] A flow chart showing an example of a manufacturing process of the shape of the surface of the susceptor.

[Fig. 6] A cross-sectional view of a manufacturing process for explaining the shape of the surface of the susceptor.

[Fig. 7] A diagram showing a profile of the surface of the susceptor by a different manufacturing method.

[Fig. 8] shows the results of the relationship between the surface roughness of the top surface of the convex portion and the etching unevenness, and (a) is a graph in which Ra and (b) are evaluated by Rz and (c) with Ry. .

[Fig. 9] A susceptor according to another embodiment in which an electrostatic chuck is provided, (a) is a cross-sectional view, and (b) is a main portion plan view.

[Fig. 10] An enlarged cross-sectional view showing the main part of the susceptor of the embodiment of Fig. 9.

1. . . Processing device (plasma etching device)

2. . . Room (processing room)

3. . . Insulation board

4. . . Receptor

5. . . Dielectric material film

5a. . . Datum

6. . . Taiwan Department

6a. . . Top surface

7. . . Convex

7a. . . Top surface

11. . . Shower head (gas supply means)

20. . . Exhaust

25. . . High frequency power supply (plasma generation means)

Claims (15)

A substrate mounting table for mounting a substrate on a substrate processing apparatus, comprising: a mounting table main body; and a plurality of convex portions protruding from a reference surface on a substrate mounting side of the mounting table main body; and surrounding The reference surface contacts the edge portion of the substrate when the substrate is placed, and is formed as an edge portion protruding from the reference surface. The top surface of the convex portion is a rough surface, and the top surface of the edge portion is a smooth surface. The surface roughness Ry (maximum height) of the top surface is 9 μm to 15 μm. A substrate mounting table for mounting a substrate on a substrate processing apparatus, comprising: a mounting table main body; and a plurality of convex portions protruding from a reference surface on a substrate mounting side of the mounting table main body, the reference The surface is a smooth surface, the top surface of the convex portion is a rough surface, and the surface roughness Ry (maximum height) of the top surface of the convex portion is 9 μm to 15 μm. A substrate mounting table for mounting a substrate on a substrate processing apparatus, comprising: a mounting table main body; and a plurality of convex portions protruding from a reference surface on a substrate mounting side of the mounting table main body; and surrounding The reference plane contacts the edge portion of the substrate when the substrate is placed, Further, the edge portion formed to protrude from the reference surface, the top surface of the reference surface and the edge portion is a smooth surface, the top surface of the convex portion is a rough surface, and the surface roughness Ry of the convex portion top surface is maximum The height) is from 9 μm to 15 μm. The substrate mounting table according to the second or third aspect of the invention, wherein the reference surface has a surface roughness Ra (arithmetic mean roughness) of 1.5 μm or less. The substrate mounting table according to the first or third aspect of the invention, wherein the top surface of the edge portion has a surface roughness Ra (arithmetic mean roughness) of 1.5 μm or less. The substrate mounting table according to the third aspect of the invention, which functions as an electrostatic adsorption electrode. The substrate mounting table according to claim 6, wherein the mounting table main body has a base material; and a first dielectric material film formed on the base material; and the first dielectric layer is laminated on the first dielectric layer a conductive layer on the conductive material film; and a second dielectric material film laminated on the conductive layer. The substrate mounting table according to claim 5, further comprising a heat transfer medium flow path that is provided to penetrate the substrate mounting table and to supply a heat transfer medium toward the back surface of the substrate. A substrate processing apparatus comprising the substrate mounting table according to any one of the first to eighth aspects of the invention. A method of manufacturing a substrate mounting table is a method of manufacturing a substrate mounting table on which a substrate is placed during processing on a substrate, and includes: a dielectric material film forming process for forming a film of a dielectric material on a surface of the substrate; and a polishing process for polishing the surface of the film of the dielectric material; and a surface of the film of the dielectric material to be polished after leaving the edge portion a cutting process for forming a concave portion; and a process for forming a convex portion of a plurality of convex portions formed by ceramics by forming a concave portion through an opening plate having a plurality of openings, wherein the convex portion is formed in a process The surface roughness Ry (maximum height) of the exit surface of the convex portion formed by the melt blown was set to be 8 μm or more to carry out solvent spray. The method of manufacturing a substrate mounting table according to the above aspect of the invention, wherein the surface roughness Ry (maximum height) of the emitting surface of the convex portion formed by the melt-dissolving is 9 μm in the convex portion forming process. The solution was sprayed to 15 μm. The method of manufacturing a substrate mounting table according to claim 10, wherein the convex portion forming process includes: a process of placing an opening plate having a plurality of openings on the dielectric material film; a process of exposing the dielectric material film in the opening of the opening plate to a Blast process; and a process of dissolving the ceramic on the dielectric material film through the opening plate; and removing the opening Board process. As noted in any of the 10th to 12th patent applications The method for producing a substrate mounting substrate, wherein the dielectric material film forming process includes a process of forming a first dielectric material film on a substrate; and forming the film on the first dielectric material film a process of forming a conductive layer; and a process of forming a second dielectric material film on the conductive layer. The method of manufacturing a substrate stage according to any one of the above-mentioned items of the present invention, wherein the polishing process is performed to have a surface roughness Ra (arithmetic mean roughness) of 1.5 μm or less. until. The method of manufacturing a substrate stage according to any one of the items of the present invention, wherein the surface roughness Ra (arithmetic mean roughness) of the bottom surface of the concave portion is changed in the cutting process Cutting or grinding is performed at 1.5 μm or less.