TWI408833B - Light-emitting element manufacturing method and light-emitting element - Google Patents

Abstract

A method for manufacturing a light emitting device, includes: preparing a first substrate by slicing a single crystal ingot pulled in a pulling direction tilted with respect to a first plane orientation, the slicing being in a direction substantially perpendicular to the pulling direction; preparing a second substrate including a major surface having a plane orientation substantially parallel to a plane orientation of a major surface of the first substrate; growing a stacked unit as a crystal on the major surface of the second substrate, the stacked unit including a light emitting layer; and removing the second substrate after bonding the stacked unit and the major surface of the first substrate by heating them in a joined state. A plane orientation of the major surface of the first substrate and a plane orientation of the major surface of the second substrate are one or another selected from a plane tilted from a (100) plane toward a [011] direction and a plane tilted from a (−100) plane toward a [0-1-1] direction, respectively.

Description

Light-emitting element manufacturing method and light-emitting element

The present invention relates to a method of manufacturing a light-emitting element and a light-emitting element.

On the GaAs substrate, a laminate having a light-emitting layer is crystal grown, and after adhering to a transparent substrate made of GaP or the like, and removing the GaAs substrate, a high-luminance light-emitting element that reduces light absorption on the substrate can be obtained.

When an InGaAlP-based semiconductor is laminated on a GaAs substrate, for example, when a substrate inclined from the (100) plane to the [011] direction or to the [01-1] direction is used, the doping efficiency for the p-type layer is improved. And it is easy to control the natural superlattice.

Further, when the inclination of the bonded GaP substrate is matched with the inclination of the GaAs substrate, it becomes a uniform bonding interface, and it is easy to improve electrical characteristics. The GaP substrate is in the plane orientation of (100) or (111), and is crystal grown by the LEC (Liquid Encapsulated Czochralski method), and is inclined to the desired angle direction in the cutting process. For the general. In this case, since the doped impurities are isolated from the seed side to the trailing end side of the single crystal block, the wafers which are obliquely cut have a range of the seed crystal portion and the tail end portion, and have poor characteristics. Increased problem.

There is a technical disclosure example (JPA 2008-252151 (Kokai)) on a bonded substrate and a light-emitting element which are stable to an epitaxial growth layer formed on a substrate. In this example, the first epitaxial layer containing the active layer was formed on the first substrate. Further, on the second substrate, a second epitaxial layer is formed and integrally bonded to the first epitaxial layer. In the bonding process, among the main faces of the first substrate, among the faces of the (111) A face and the (111) B face, the main faces of the second substrate are joined. (111) A face in which any one of the A face and the (111) B face preferentially appears.

However, even in this case, it is not sufficient to reduce the variation (unevenness) in the characteristic distribution in the wafer surface after bonding.

According to an aspect of the present invention, there is provided a single crystal single crystal block which is to be pulled up in a direction in which the first surface orientation is inclined, and which is pulled up as a pulling direction, and is cut in the pulling direction. The substrate of the first substrate cut in the direction perpendicular to the vertical direction, and the second substrate of the main surface having the surface orientation slightly parallel to the main surface of the first substrate, and the crystal growth having the light-emitting layer In the process of laminating the main surface of the second substrate, and superposing the laminate and the main surface of the first substrate, heat-bonding and then removing the second substrate The surface orientation of the main surface of the first inclined substrate is one of a surface inclined from the (100) plane in the [011] direction and a surface inclined from the (-100) plane in the [0-1-1] direction. The surface orientation of the main surface of the second substrate is one from the (100) plane inclined to the [011] direction and the (-100) plane inclined to the [0-1-1] direction. A method of manufacturing a light-emitting element characterized by the following.

Further, according to another aspect of the present invention, there is provided a single crystal single crystal block which is pulled up in a pulling direction from a direction inclined with respect to a first surface orientation, and the pulling direction is Cutting into a direction slightly orthogonal to the surface of the substrate doped with Zn and Si having a lower concentration of Zn, and a main surface having a plane orientation slightly parallel to the main surface of the substrate, and the aforementioned substrate The main surface side is bonded to each other and has a laminated body of the light-emitting layer; the surface orientation of the main surface of the laminated body is a surface inclined from the (100) plane in the [011] direction and inclined from the (-100) plane In one of the faces in the [0-1-1] direction, the surface orientation of the main surface of the substrate is a surface inclined from the (100) plane in the [011] direction and inclined from the (-100) plane to [0- In any one of the faces of the 1-1] direction, the substrate is a light-emitting element characterized by light emitted from the light-emitting layer.

Further, according to still another aspect of the present invention, there is provided a substrate having a pit row which is slightly perpendicular to a main surface, and a main surface having a plane direction slightly parallel to the main surface of the substrate And a laminated body having a light-emitting layer bonded to the main surface side of the substrate; and a surface orientation of the main surface of the laminate is a surface inclined from the (100) plane in the [011] direction and (-100) The surface is inclined to one of the faces in the [0-1-1] direction, and the surface orientation of the main surface of the substrate is a surface inclined from the (100) plane in the [011] direction and from (-100) The substrate is inclined to any one of the faces in the [0-1-1] direction, and the substrate is a light-emitting element characterized by light emitted from the light-emitting layer.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

Fig. 1 is a schematic cross-sectional view showing a light-emitting device according to a first embodiment of the present invention.

The adhesive layer 12 formed of p-type GaP or the like is grown on the upper side of the first inclined substrate 10 formed of p-type GaP or the like. On the other hand, a contact layer 20 made of n-type GaAs or the like, a current diffusion layer 22 made of n-type InGaAlP, a cladding layer 24 made of n-type InGaAlP, a light-emitting layer 26 made of InGaAlP, and p-type InGaAlP are formed. The adhesive layer 30 formed of the cladding layer 28 and the p-type InGaAlP constitutes the laminate 32. However, the conductivity type is not limited thereto. For example, as the n-type GaP substrate, the conductivity type of the laminate may be reversed.

However, in the present specification, the "inclined substrate" is used as a substrate indicating that the surface orientation of the principal surface of the substrate is a low-level crystal plane offset of (100), (110), and (111).

In addition, in the present specification, "InGaAlP" means a composition formula represented by In _x (Ga _y Al _1-y ) _1-x P (however, 0≦x≦1, 0≦y≦1). The compound semiconductor material also includes a composition which is doped with an impurity element which is doped to control conductivity.

The adhesive layer 30 of the laminate 32 and the adhesive layer 12 disposed on the inclined substrate 10 are bonded at the bonding interface 46. The n-side electrode 40 formed of AuGe or the like is disposed above the contact layer 20 of a slightly different size. Further, the p-side electrode 44 formed of AuZn or the like is provided on the back side of the inclined substrate 10. In this manner, the light-emitting layer 26 can emit visible light in the green to red wavelength range via the current injected into the longitudinal direction. However, the inclined substrate 10 is not limited to light transmissivity, and when it is translucent, the light emitted from the light-emitting layer 26 can reduce light absorption on the substrate and emit high output to the outside. ideal.

As the light-transmitting, the inclined substrate 10 made of the III-V group depends on the light-emitting wavelength, but AlGaAs, AlAs or the like can also be used. Further, as the laminate 32, AlGaAs or GaAs may be used.

The laminate 32 is, for example, from the (100) plane orientation to the [011] direction, and the crystal is grown above the second inclined substrate having the first inclination angle. When the crystal growth is carried out above the inclined substrate, the introduction rate of the impurity is increased, and it is easy to control the impurity such as a high concentration, and it is preferable to control the emission wavelength. When the InGaAlP-based material is crystal grown on a GaAs substrate or the like, the inclination angle coefficient is preferably at least the degree, and more preferably at around 15 degrees. When the tilt angle is too large, crystal growth becomes difficult.

On the other hand, the inclined substrate 10 has a second inclination angle, for example, from a (-100) plane orientation to a [0-1-1] direction. The adhesive layer 12 in which the crystal grows above the inclined substrate 10 can also have a slightly inclined angle. When either the first inclination angle or the second inclination angle is increased, the crystallinity at the interface is disturbed, and the interface impedance is increased, which is not preferable. That is, it is preferable that the shift of the tilt angle is small, and it is preferable that it is smaller than 1 degree. However, the offset of the tilt angle is indicative of the offset of the plane orientation. In the present specification, "slightly parallel plane orientation" means that the offset of the plane orientation is smaller than 1 degree.

Further, in the case where the inclined substrate 10 and the laminated body 32 are adhered in the wafer state, they are not bonded by the adhesive layer. However, by bonding the layer 12, it is possible to bond more reliably with the dissimilar materials.

2A to 2D are cross-sectional views showing the construction of a method of manufacturing a light-emitting device of the present embodiment.

The second inclined substrate 34 made of n-type GaAs or the like doped with Si or the like is formed by slicing a single crystal single crystal block pulled up using a just seed, but is used as a single sheet pulled from the off seed. The crystal single crystal block may be formed by slicing.

The second inclined substrate 34 has, for example, a main surface which is inclined at a slight angle of 15 degrees from the (100) plane orientation to the [011] direction, and the crystal growth is formed by the adhesion layer 36 and the contact layer 20 on the surface. Body 32. For the crystal growth, for example, a MOCVD (Metal Organic Chemical Vapor Deposition) method or an MBE (Molecular Beam Epitaxy) method can be used. In the case of the MOCVD method, the second inclined substrate 34 was placed on the heating stage in the apparatus, and the temperature was raised to 730 ° C in the AsH ₃ environment.

When AsH ₃ (胂) is substituted with PH ₃ (phosphine), and then TMG (Trimethyl Gallium), TMI (Trimethyl Indium), and SiH ₄ (decane) are supplied, an adhesion layer 36 made of Si-doped InGaP is formed.

Next, when PH _{3 is} substituted for AsH ₃ and then TMG and SiH ₄ are supplied, a contact layer 20 made of Si-doped GaAs is formed.

Next, when AsH _{3 is} substituted with PH ₃ and then TMG, TMI, TMA, and SiH ₄ are supplied, a current diffusion layer 22 made of Si-doped InGaAlP is formed.

Next, when Zn is doped by using DMZ (Dimethyl Zinc), the light-emitting layer 26, the cladding layer 28, and the adhesive layer 30 can be made p-type. After the laminate 32 was formed in this manner, the temperature was lowered in the pH ₃ atmosphere, and after the temperature was lowered to room temperature, the supply of the pH ₃ was stopped, and the nitrogen gas was replaced by the nitrogen gas to complete the crystal growth process (Fig. 2 (a)).

As described above, when the MOCVD method is used, it is easy to use the light-emitting layer 26 as the MQW structure. When it is configured as an MQW (Multiple Quantum Well) structure, it is easy to control the emission wavelength and reduce the operating current.

On the other hand, using the LEC method, for example, a p-type GaP single crystal single crystal block is pulled up in a plane direction inclined from the (-100) plane to the [0-1-1] direction by 15 degrees. That is, the pulling direction of the single crystal single crystal block is a direction which is slightly inclined by 15 degrees from the (-100) plane to the [0-1-1] direction. This can be controlled by determining the plane orientation of the seed crystal (SEED) of the crystal orientation of the single crystal single crystal block. That is, a single crystal single crystal having such a crystal orientation can be obtained by a direction in which the seed crystal is inclined at a slight angle of 15 degrees from the (-100) plane to the [0-1-1] direction as a pulling direction. Block grower.

However, in this case, when the doping amount of Zn and Si is controlled, the desired carrier concentration can be made.

When the single crystal single crystal block is thinned (sliced) in a direction perpendicularly perpendicular to the pulling direction thereof, a slight 15 degree from the (-100) plane to the [0-1-1] direction can be obtained. The inclined plane orientation is the first inclined substrate 10 of the main surface. However, the first inclined substrate 10 is at the center of the substrate (size 5 mm × 5 mm), for example, the Zn concentration is slightly 8.0 × 10 ¹⁷ cm ^-3 , Si concentration 1.0 × 10 ¹⁷ cm ^-3 . Further, when measured by the eddy current method, the p-type carrier concentration was slightly 7.5 × 10 ¹⁷ cm ^-3 .

The first inclined substrate 10 is placed on a heating stage in the MOCVD apparatus, and the temperature is raised to 730 ° C in a PH ₃ environment, and when TMG and DMZ are supplied, an adhesive layer 12 made of p-type GaP can be formed (FIG. 2). (b)).

The layered structure shown in Fig. 2 (a) and Fig. 2 (b) is washed with an ultrasonic cleaning device or the like, and then the wafer state is superimposed and heated and bonded at 200 ° C (Fig. 2 (Fig. 2 c)). In this case, the main surface 12a of the adhesive layer 12 on the side of the first inclined substrate 10 and the main surface 32a of the laminated body 32 are bonded. Thereafter, in the hydrogen environment, when the heat treatment process was performed at 400 ° C for 60 minutes, the bonding process was completed.

Next, when the bonded structure is immersed in ammonia water: hydrogen peroxide water is a 1:15 mixed solution (25 ° C), for example, the second inclined substrate 34 made of GaAs can be removed by 60 minutes. Thereafter, in the hydrogen atmosphere, when the heat treatment is performed at 700 ° C for 60 minutes, the adhesion strength between the laminate 32 and the adhesion layer 12 of the first inclined substrate 10 can be further improved. Further, when immersed in hydrochloric acid, the adhesive layer 36 can be removed.

The first inclined substrate 10 is polished, and the thickness thereof is, for example, 200 μm as shown by a broken line (Fig. 2(d)). Further, the p-side electrode 44 and the n-side electrode 40 are formed and subjected to a heat treatment process to form a resistive contact layer. The light-emitting element of Fig. 1 can be obtained by cutting.

3(a) is a cross-sectional view of the embodiment, FIG. 3(b) is a cross-sectional view of a comparative example, FIG. 3(c) is a conceptual view of a single crystal, and FIG. 3(d) is a cross-sectional view of the bonding surface. Fig. 3(e) is a conceptual diagram of a single crystal according to the present embodiment.

In the light-emitting element of this embodiment of Fig. 3 (a), a substrate 10 obtained by using a single crystal single crystal block which is pulled up using a eccentric seed crystal is used.

On the other hand, in the light-emitting element of the comparative example of FIG. 3(b), for example, a single crystal single crystal block in which the optimum surface of the (100) plane or the (111) plane is pulled as a seed crystal is used, and only the tilted portion is used. The inclined substrate 110 (Fig. 3(c)) is sliced at a desired angle from the (-100) plane to the [0-1-1] direction. An adhesive layer 112 is disposed on the inclined substrate 110, and the laminated layer 132 is bonded to the bonding interface 146.

When the GaP single crystal single crystal block is pulled up, the pit density (EPD) is likely to become high in the range of the seed crystal side, the trailing end side, and the outer edge of the single crystal block 8. Therefore, when the range L1 of the intermediate portion of the single crystal single crystal block 8 having a relatively low pit density is used, it is easy to increase the yield of the wafer in the wafer. However, in the case of slicing and slicing, when the range L1 of the seed side and the trailing end side is avoided, the high wafer yield can be maintained, but the range of use is reduced by L2. In addition, in the tail end range, the Zn concentration is liable to become high.

In the present embodiment, as shown in Fig. 3(e), a single crystal single crystal block which is pulled up in a direction inclined with respect to the plane orientation of (100) is sliced in a direction slightly perpendicular to the pulling direction. The first inclined substrate 10 is cut into the first one. In this case, the use of the single crystal single crystal block may extend the length of L1, and the yield of the wafer is increased. In this case, as shown in FIG. 3(d), the plane orientation of the principal surface 12a of the adhesion layer 12 provided on the first inclined substrate 10 slightly matches the plane orientation of the principal surface 10a of the first inclined substrate 10. Further, the plane orientation of the principal surface 32a of the laminate 32 slightly coincides with the plane orientation of the principal surface 34a of the second inclined substrate 34.

The plane orientation of the principal surface 10a of the first inclined substrate 10 and the plane orientation of the principal surface 12a of the adhesive layer 12 are inclined from the (100) plane to the plane orientation in the [011] direction and from the (-100) plane to [ Any one of the plane orientations of the 0-1-1] direction is preferred. Further, the plane orientation of the principal surface 32a of the laminate 32 is a plane orientation inclined from the (100) plane in the [011] direction and a plane orientation inclined from the (-100) plane in the [0-1-1] direction. One other party is better. By such a combination, it is easy to improve both the doping control property and the light-emitting property.

In general, in a group III-V compound semiconductor such as GaP or GaAs, the surface of the surface on the seed side and the side on the trailing end side are formed by the angle from which the substrate is sliced from the single crystal single crystal block. Different situations. In addition, the surface of the layer which is different from the substrate or the layer which is grown above is also slightly in the same plane orientation as the substrate. In other words, either one is "a surface inclined to the group III surface", and the other side is a "face inclined to the V group surface". For example, in FIG. 3(d), the "surface" different from each other is formed on the principal surface 10a of the first inclined substrate 10 and the other surface 10b. Further, in the second inclined substrate 34, a different "face" is also formed on the main surface 34a and the other surface 34b.

When the "faces" which are so different from each other are bonded together, the ratio of the group III to the group V is kept slightly, the suspension key is lowered, and the entire substrate can be uniformly bonded, which can reduce the variation of the interface impedance (not All).

In addition, the etch pit was observed by the following method. First, in the case of a planar plane, when the wafer is opened in parallel, the profile is a (01-1) plane. Next, the mixture was immersed in a mixture of hydrofluoric acid, sulfuric acid, and hydrogen peroxide, and the main surface and the (01-1) plane were observed through a differential interference microscope. In the inclined substrate 10 of the first embodiment of Fig. 3(a) and the inclined substrate 110 of Fig. 3(b), no significant difference in the pit density on the principal surface was observed. On the other hand, in the (01-1) plane, in the present embodiment, as shown in FIG. 3(a), the triangular hammer-shaped pit row 11 is observed for the main surface 10a of the first inclined substrate 10, In the slightly perpendicular direction, in the comparative example, the pit row 111 is easily aligned with respect to the main surface 110a of the inclined substrate 110 in the direction inclined with respect to the vertical direction. In this way, by observing the arrangement direction of the etch pits, it is possible to clearly know the direction in which the single crystal is pulled up by the inclined substrate.

Fig. 4(a) shows the in-plane distribution of the light output of the present embodiment, and Fig. 4(b) shows the in-plane distribution of the light output of the comparative example. The X and Y lines show the relative position coordinates that are perpendicular to each other in the wafer surface. Further, in the present embodiment and the comparative example, the "face inclined to the group III surface" and the "face inclined to the group V surface" were bonded.

In the wafer from the single crystal block slice used in the present embodiment, the Zn concentration in the center of the range of 5 mm × 5 mm is 8.0 × 10 ¹⁷ cm ^-3 as analyzed by SIMS (Secondary Ionization Mass Spectrometer). However, in addition, when measured by the eddy current method, the p-type carrier concentration was slightly 7.5 × 10 ¹⁷ cm ^-3 . As shown in Fig. 4 (a), the light output Po of the light-emitting element of the present embodiment using this substrate has a maximum value of 3.41 mW, a minimum value of 3.15 mW, an average value of 3.3 mW, and a standard deviation of 0.06 mW.

On the other hand, in the substrate of the comparative example, a single crystal block of the optimum seed crystal which is pulled up using the pull-up orientation as [-100] is used, and the direction from (-100) to [0-1-1] is omitted. The composition of a 15 degree oblique slice. The Zn concentration in the center of the range of 5 mm × 5 mm from the single crystal block section was 7.8 × 10 ¹⁷ cm ^-3 , and the Si concentration was 1.0 × 10 ¹⁶ cm ^-3 . In the present comparative example, the case where Si was detected irrespective of undoped Si was caused by the mixing of the quartz member used for the pulling up (the substrate was sliced from the vicinity of the seed crystal side). Further, when measured by the eddy current method, the p-type carrier concentration was 7.5 × 10 ¹⁷ cm ^-3 .

As shown in Fig. 4 (b), the light output Po of the light-emitting element of the comparative example using this substrate had a maximum value of 3.51 mW, a minimum value of 2.88 mW, an average value of 3.22 mW, and a standard deviation of 0.15 mW. That is, in the comparative example, the variation (unevenness) of the light output Po is large, and the standard deviation is slightly 2.5 times that of the embodiment.

Fig. 5(a) is distributed in the wafer surface of the operating voltage of the constant operating current of the present embodiment, and Fig. 5(b) is distributed in the wafer surface of the operating voltage of the constant operating current of the comparative example. The X and Y lines show the relative position coordinates that are perpendicular to each other in the wafer surface.

As shown in Fig. 5(a), the maximum value of the operating voltage V _F of the present embodiment is 2.306 V, the minimum value is 2.239 V, the average value is 2.273 V, and the standard deviation is 0.019 V. On the other hand, the maximum value of the operating voltage V _F of the comparative example of Fig. 5 (b) was 2.375 V, the minimum value was 2.189 V, the average value was 2.270 V, and the standard deviation was 0.049 V. That is, in the comparative example, the fluctuation of the operating voltage was large, and the standard deviation was slightly 2.6 times that of the present embodiment.

In the present embodiment, the unevenness of the interface impedance at the bonding interface 46 between the first inclined substrate 10 and the laminated body 32 is smaller than the difference in the interface impedance of the comparative example. Therefore, in the present embodiment, the operating voltage V _F can be made uniform even in the entire wafer, and the variation (unevenness) of the light output Po can be reduced.

However, even if the single crystal single crystal block pulled up by the eccentric seed crystal is n-type GaP, when the adhesion is inclined to the surface of the group III and the surface inclined to the group V, the fluctuation of the operating voltage and the light output can be reduced. .

In other words, according to the manufacturing method shown in FIG. 2, as shown in FIG. 4 and FIG. 5, the characteristic variation is reduced, the yield of the wafer is improved, and the mass productivity is improved. As a result, the price is lowered.

Fig. 6(a) is a graph showing changes in light output of a comparative example, and Fig. 6(b) is a graph showing changes in light output of the light-emitting element of the second embodiment. In the figure, the vertical axis is the relative light output (%), and the horizontal axis is the energization time (h).

However, in the present embodiment, the laminated system has the same shape as that of the first embodiment shown in Fig. 1, but the doping of the first inclined substrate 10 is different.

In the comparative example of Fig. 6 (a), the inclined substrate used was sliced from the trailing end side (near the range T of Fig. 3 (c)) of the single crystal single crystal block pulled up using the optimum seed crystal. Generally, in the tail end side, there are many crystal defects, and it is easy to promote the diffusion of Zn. However, the Zn concentration was set to be two of 1.5 × 10 ¹⁸ cm ^-3 and 2.0 × 10 ¹⁸ cm ^-3 .

In the substrate sliced from the vicinity of the trailing end, the automatic doping of Si from the quartz member used in the pulling up process is small, and is below the detection limit of the actual SIMS. In the case of the comparative example, the light output after 1000 hours dropped to the range of 75 to 81% of the initial value. However, no significant difference was observed for the difference between the two Zn concentrations.

On the other hand, in the light-emitting element using the inclined substrate from the seed crystal side shown in the range S of FIG. 3(c), the inventors have obtained a view that the light output is less lowered even if the pit density is high.

In the seed crystal side, irrespective of undoped Si, and from the case where a Si concentration of slightly 1 × 10 ¹⁶ cm ^-3 was detected, Si was considered to have an inhibitory effect on the diffusion of Zn.

According to this finding, in the second embodiment, the first inclined substrate 10 is doped with Zn and Si having a relatively low concentration of Zn. That is, each of the substrates having a concentration of 1.5 × 10 ¹⁸ cm ^-3 and a concentration of 1.2 × 10 ¹⁶ cm ^-3 for Si is used, and the concentration of Zn is set to be 2.0 × 10 ¹⁸ cm ^-3 , and the concentration of Si is set to 1.4 × 10 ¹⁶ cm ^-3 substrate. As a result, as shown in FIG. 6(b), the fluctuation of the light output Po can be reduced to ±2% or less of the initial value after 1000 hours have elapsed. However, no significant difference was seen for the difference between the two set concentrations.

Fig. 7 is a graph showing the dependence on the Si concentration of the light output Po. The vertical axis is the initial relative luminance, and the horizontal axis is the Si concentration (cm ^-3 ).

The Zn concentration was 7.0 × 10 ¹⁷ cm ^-3 , and the Si concentration was 5.0 × 10 ¹⁶ cm ^-3 , 1.0 × 10 ¹⁷ cm ^-3 , 1.5 × 10 ¹⁷ cm ^-3 , and 2.0 × 10 ¹⁷ cm ^-3 . The light output Po (brightness) is the lower the Si concentration, the higher the ratio, and the sharp drop between 1.5 × 10 ¹⁷ cm ^-3 and 2.0 × 10 ¹⁷ cm ^-3 . That is, it is preferable that the Si concentration is slightly 1.5 × 10 ¹⁷ cm ^-3 or less. However, at any Si concentration, the variation of the light output Po over 1000 hours is less than ±2%. That is, when the Si concentration is higher than the automatic incorporation of the single crystal single crystal block and is 1.5 × 10 ¹⁷ cm ^-3 or less, the light output Po is controlled while the light output is lowered, and the wafer is controlled. A light-emitting element in which the in-plane characteristics vary (uneven) becomes easy.

According to the first and second embodiments, it is possible to provide a light-emitting element which reduces fluctuations in the interface impedance value and further improves fluctuations in the operating voltage V _F and the light output Po in the wafer surface. The above light-emitting elements can be widely applied to illumination devices, display devices, signal devices, and the like.

The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the embodiments. The material, size, shape, arrangement, etc. of the single crystal single crystal block, the substrate, the laminate, the host, the donor, and the like which constitute the present invention are not changed from the design of the manufacturer. The gist of the invention is included in the scope of the invention.

10. . . The first inclined substrate

12. . . Adhesive layer

20. . . Contact layer

twenty two. . . Current diffusion layer

24,28. . . Coating

26. . . Luminous layer

30,36. . . Adhesive layer

34. . . 2nd inclined substrate

32. . . Laminated body

40. . . N-side electrode

44. . . P-side electrode

46. . . Bonding interface

110. . . Tilting substrate

Fig. 1 is a schematic cross-sectional view showing a light-emitting device of a first embodiment.

Fig. 2 is an engineering sectional view showing a method of manufacturing a light-emitting element of the embodiment.

FIG. 3 is a schematic view showing a tilted substrate.

[Fig. 4] The in-plane distribution of the wafer of light output.

[Fig. 5] The in-plane distribution of the operating voltage.

Fig. 6 is a graph showing the variation of the light output in the second embodiment.

FIG. 7 is a graph showing the dependence on the Si concentration of the light output.

10. . . The first inclined substrate

12. . . Adhesive layer

20. . . Contact layer

twenty two. . . Current diffusion layer

24,28. . . Coating

26. . . Luminous layer

30. . . Adhesive layer

32. . . Laminated body

40. . . N-side electrode

44. . . P-side electrode

46. . . Bonding interface

Claims (4)

A light-emitting element comprising: a zinc-doped, and a GaP substrate having a concentration lower than a concentration of zinc and having a concentration of 1 × 10 ¹⁶ cm ^-3 or more and 5 × 10 ¹⁷ cm ^-3 or less; a light-emitting layer formed on the GaP substrate, comprising a laminate of In _x (Ga _y Al _1-y ) _1-x P (only 0≦x≦1, 0≦y≦1); the GaP substrate may be Light is emitted from the luminescent layer. The light-emitting element of claim 1, wherein the conductive type of the GaP substrate is p-type. The light-emitting element according to claim 2, further comprising an adhesive provided between the GaP substrate and the laminate. The light-emitting element according to any one of claims 1 to 3, wherein the GaP substrate is a tilted substrate.