TWI406070B - Thin film transistor substrate, display panel, display apparatus and manufacturing methods thereof - Google Patents

Abstract

A thin film transistor substrate includes a plurality of data lines and a plurality of scan lines that define a plurality of pixel areas. Each pixel area has at least one pixel electrode, at least one storage electrode and a dielectric layer. The pixel electrode is disposed opposite to the storage electrode. The storage electrode has a transparent portion and a non-transparent portion. The dielectric layer is disposed between the storage electrode and the pixel electrode.

Description

Thin film transistor substrate, display panel, display device and method of manufacturing same

The present invention relates to a thin film transistor substrate, a display panel, a display device, and a method of fabricating the same.

1A and FIG. 1B, FIG. 1A is a plan view of a conventional thin film transistor substrate 1, and FIG. 1B is a cross-sectional view taken along line A-A of FIG. 1A. The thin film transistor substrate 1 has a pixel electrode 11, a storage electrode 12, a dielectric layer 13, and a substrate 14. The storage electrode 12 is disposed on the substrate 14, the pixel electrode 11 is disposed on the storage electrode 12, and the dielectric layer 13 is disposed between the pixel electrode 11 and the storage electrode 12, such that the pixel electrode 11 and the storage electrode 12 are disposed. A storage capacitor is formed.

Since the capacitance value of the storage capacitor affects the quality of the picture, for example, when the capacitance value is too small, the picture is prone to flicker and cross-talk. Therefore, how to maintain sufficient capacitance is a necessary consideration. design. A common practice is to use an opaque metal as a storage electrode to increase the storage capacitance value. However, an opaque metal will cause a decrease in the aperture ratio of the pixel, thereby affecting the display effect and quality of the image.

In view of the above problems, an object of the present invention is to provide a thin film transistor substrate, a display panel, and a display device capable of increasing a capacitance value and an aperture ratio. Its manufacturing method.

To achieve the above object, a thin film transistor substrate according to the present invention comprises a plurality of rows of data lines and a plurality of columns of scan lines. The data lines and the scan lines define a plurality of pixel regions, wherein each pixel region includes at least one pixel electrode, at least one storage electrode, and a dielectric layer. The storage electrode is opposite to the pixel electrode, and the storage electrode has a light transmitting portion and a non-light transmitting portion. The dielectric layer is disposed between the storage electrode and the pixel electrode.

To achieve the above object, a display panel according to the present invention comprises a pair of substrates and a thin film transistor substrate. The thin film transistor substrate is opposite to the opposite substrate, and the thin film transistor substrate has a plurality of rows of data lines and a plurality of columns of scan lines, and the data lines and the scan lines define a plurality of pixel regions, wherein each pixel The area includes at least one pixel electrode, at least one storage electrode, and a dielectric layer. The storage electrode is opposite to the pixel electrode, and the storage electrode has a light transmitting portion and a non-light transmitting portion. The dielectric layer is disposed between the storage electrode and the pixel electrode.

To achieve the above objective, a display device according to the present invention comprises a backlight module and a display panel. The display panel is disposed adjacent to the backlight module, wherein the display panel comprises a pair of substrates and a thin film transistor substrate. The thin film transistor substrate is disposed opposite to the opposite substrate, and the thin film transistor substrate includes at least one pixel electrode, at least one storage electrode, and a dielectric layer. The storage electrode is opposite to the pixel electrode, and the storage electrode has a light transmitting portion and a non-light transmitting portion. The dielectric layer is disposed between the storage electrode and the pixel electrode.

In order to achieve the above object, a method for fabricating a thin film transistor substrate according to the present invention comprises the steps of: forming a storage electrode on a substrate, The middle storage electrode has a light transmitting portion and a non-light transmitting portion; and a pixel electrode is formed on the storage electrode.

In order to achieve the above object, a method for manufacturing a display panel according to the present invention includes the steps of: forming a storage electrode on a substrate, wherein the storage electrode has a light transmitting portion and a non-light transmitting portion; and forming a pixel electrode Above the storage electrode.

In order to achieve the above object, a method of manufacturing a display device according to the present invention includes the steps of: forming a storage electrode on a substrate, wherein the storage electrode has a light transmitting portion and a non-light transmitting portion; and forming a pixel electrode Above the storage electrode.

According to the present invention, a thin film transistor substrate, a display panel, a display device, and a method of fabricating the same are provided, wherein the storage electrode is opposite to the pixel electrode, so that the light transmitting portion and the non-light transmitting portion of the storage electrode are respectively Forming a storage capacitor with the pixel electrode. In the present invention, the light-transmitting portion is used to increase the storage capacitance value, and the area of the non-light-transmitting portion can be reduced, thereby increasing the aperture ratio of the pixel.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a thin film transistor substrate, a display panel, a display device, and a method of fabricating the same according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

2 is a schematic view of a thin film transistor substrate 2 in accordance with a preferred embodiment of the present invention. The thin film transistor substrate 2 includes a plurality of rows of data lines DL ₁ to DL _m and a plurality of columns of scan lines SL ₁ to SL _n , and the data lines DL ₁ to DL _m and the plurality of scan lines SL ₁ to SL _n define a plurality of pictures a pixel region, wherein each pixel region includes at least one pixel electrode 21 and at least one storage electrode 22.

Please refer to FIG. 3A. For simplification of description, the data line DL ₁ and the scanning line SL ₁ and the pixel area formed by the same are taken as an example. The data line DL ₁ and the scan line SL _{1 are} adjacent to the pixel electrode 21, and the data line DL ₁ provides a data voltage V _d to the thin film transistor TFT ₁ and is electrically connected to the pixel electrode 21. Pixel electrode 21 and the scan line SL ₁ and the distance D ₁ of the pixel electrode 21 and the data line DL of _a distance D ₂ of approximately 3.5 microns or greater, in order to avoid excessive coupling capacitance effect caused by crosstalk (cross talk) problems .

Referring to FIG. 3B again, it is a cross-sectional view taken along line B-B of the thin film transistor substrate 2 of FIG. 3A. The thin film transistor substrate 2 includes a pixel electrode 21 and a storage electrode 22. The storage electrode 22 is opposite to the pixel electrode 21, and the storage electrode 22 has a light transmitting portion 221 and a non-light transmitting portion 222. In this embodiment, the storage electrode 22 is disposed on a substrate 23, and the pixel electrode 21 is disposed on the storage electrode 22. The storage electrode 22 and the pixel electrode 21 form a storage capacitor.

The non-transmissive portion 222 of the storage electrode 22 is disposed on the transparent portion 221 and is in contact with each other. Of course, the transparent portion 221 may be disposed on the non-transmissive portion 222, which is not limited herein. The material of the light transmitting portion 221 includes indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO) or zinc oxide (ZnO) instead of light transmission. The material of the portion 222 includes copper, aluminum, molybdenum, silver, chromium, titanium, tungsten, or a combination thereof.

The thin film transistor substrate 2 further includes a dielectric layer 24, which is disposed in the reservoir Between the storage electrode 22 and the pixel electrode 21, the dielectric layer 24 includes at least a first insulating layer 241 and a second insulating layer 242. In the present embodiment, the dielectric layer 24 is exemplified by the first insulating layer 241 and the second insulating layer 242. The material of the first insulating layer 241 includes yttrium oxide, tantalum nitride, hafnium oxynitride, aluminum oxide, Aluminum nitride, vanadium oxide, ruthenium oxide or ruthenium oxide, and the material of the second insulation layer 242 comprises ruthenium oxide, ruthenium nitride, ruthenium oxynitride, aluminum oxide or ruthenium oxide.

Referring to FIG. 3A again, it should be particularly noted that the area of the transparent portion 221 may be less than or equal to the area of the pixel electrode 21, and the length and width of the transparent portion 221 are less than or equal to the length of the pixel electrode 21. With width. In the present embodiment, when the light transmitting portion 221 and the pixel electrode 21 are projected onto the same plane, the light transmitting portion 221 overlaps with the partial pixel electrode 21. Since the storage capacitor value is proportional to the area of the storage electrode and the storage capacitor value and the liquid crystal capacitor value are different in different applications, by adjusting the area of the light transmitting portion 221 and the non-light transmitting portion 222, The ratio of the storage capacitor value to the value of the liquid crystal capacitor can be controlled. In this embodiment, the control of the storage capacitor value is mainly contributed by the light transmitting portion 221 of the storage electrode 22, and the main function of the non-light transmitting portion 222 is to electrically connect with the light transmitting portion to provide a common voltage signal of the storage electrode. Therefore, compared with the conventional storage electrode 12, the area of the non-transmissive portion 222 only needs to be larger than the area sufficient to provide the common voltage signal to the non-transmissive portion, and at the same time, the storage capacitor value can be maintained, thereby improving the drawing. The aperture ratio of the prime.

As the consideration of energy saving needs is an important trend in the future, the increase in aperture ratio will be more important in the panel design process. Hereinafter, an embodiment in which the aperture ratio is increased will be described with reference to FIGS. 4A and 4B. 4A, the above-described embodiment except that the pixel electrode 21 and the light transmitting portion 22 of the storage electrodes 221 may be simultaneously coincident with _a portion of data line DL. And then in FIG. 4B, with the different embodiments it is that only the pixel electrode 21 and the data line DL ₁ partially overlap. In view of the above, it will effectively increase the aperture ratio.

Referring to FIG. 4A again, the light transmitting portions 221 of the storage electrodes 22 in the two adjacent pixel regions are separated by a distance D ₃ , and the pixel electrodes 21 of the two adjacent pixel regions are separated by a distance D _{4 .} Wherein the distance D _{4 is} less than or equal to the distance D ₃ , and the range of the distance D ₃ and the distance D ₄ is greater than or equal to 2 μm, and in the preferred embodiment, the distance D ₄ is 3 to 3.5 μm.

In addition, in the present embodiment, the boundary of the non-transmissive portion 221 of the storage electrode 22 is still located within the pixel electrode 21, that is, the length and width of the transparent portion 221 of the storage electrode 22 are both less than or equal to the pixel electrode 21. Length and width.

In addition, a display panel according to a preferred embodiment of the present invention is, for example, a liquid crystal display panel having a pair of substrates and a thin film transistor substrate. The thin film transistor substrate is disposed opposite to the opposite substrate, wherein the thin film transistor substrate comprises a pixel electrode and a storage electrode. The storage electrode is opposite to the pixel electrode, and the storage electrode has a light transmitting portion and a non-light transmitting portion. Since the features of the thin film transistor substrate have been described in detail above, they will not be described again.

Furthermore, a display device according to a preferred embodiment of the present invention is, for example, a liquid crystal display device having a backlight module and a display panel. The display panel is disposed adjacent to the backlight module, wherein the display panel comprises a pair of substrates and a thin film transistor substrate. Thin film transistor substrate and counter substrate In contrast, the thin film transistor substrate includes a pixel electrode and a storage electrode. The storage electrode is opposite to the pixel electrode, and the storage electrode has a light transmitting portion and a non-light transmitting portion. Since the features of the thin film transistor substrate have been described in detail above, they will not be described again.

Next, referring to FIG. 5, a method of manufacturing a thin film transistor substrate according to a preferred embodiment of the present invention includes steps S11 to S13. Referring to FIG. 5 and FIG. 6A to FIG. 6C, a method of manufacturing the thin film transistor substrate 2 of the present embodiment will be further described. FIGS. 6A to 6E are flowcharts showing the manufacture of the thin film transistor substrate.

As shown in FIG. 6A, a storage electrode 22 is formed on a substrate 23, wherein the storage electrode 22 has a light transmitting portion 221 and a non-light transmitting portion 222.

As shown in FIG. 6B, step S12 is to form a dielectric layer 24 on the storage electrode 22. The dielectric layer 24 includes a first insulating layer 241 and a second insulating layer 242.

As shown in FIG. 6C, step S13 is to form a pixel electrode 21 above the storage electrode 22.

Specifically, in step S11, a gate of a thin film transistor is formed on the substrate 23 (not shown) while forming the storage electrode 22, that is, the gate of the storage electrode 22 and the thin film transistor. Extremely located on the same floor. Hereinafter, please refer to FIG. 7 and FIG. 8A to FIG. 8E to explain the manufacturing process of the storage electrode in more detail (ie, step S11). As shown in FIG. 7, step S1 further includes steps S111 to S114, and FIGS. 8A to 8E are schematic diagrams showing a manufacturing process of the method for manufacturing the storage electrode.

Referring to FIG. 7 and FIG. 8A simultaneously, step S111 is to form a light-transmissive conductive layer L ₁ on the substrate 23.

8A, the step S112 of the light transmitting conductive layer L ₁ to form a non-transparent conductive layer L _2. The order in which the light-transmitting conductive layer L ₁ and the non-transmissive conductive layer L _{2 are} formed may also be reversed, and is not limited herein.

As shown in FIG. 8B, step S113 is to form a patterned photoresist layer L ₃ on the non-transmissive conductive layer L ₂ . In this embodiment, a photoresist layer (not shown) is coated on the non-transmissive conductive layer L ₂ , and the non-transmissive conductive layer L _{2 is} performed by a halftone mask M (Halftone mask) technology. The exposure and development processes are performed to form a patterned photoresist layer L ₃ . It is worth mentioning that the patterned photoresist layer L ₃ can also be formed by performing an exposure and development process on the non-transmissive conductive layer L ₂ by using a slit mask technique.

8C, the step S114 is L ₁ and non-transparent portions of the light-transmitting conductive layer is etched to form the conductive layer L ₂ non-transmissive portion 221 and the light-transmissive portion 222. In this embodiment, first, the portion other than the patterned photoresist layer L ₃ , that is, the portion of the transparent conductive layer L ₁ and the non-transmissive conductive layer L ₂ that is not covered by the patterned photoresist layer L _{3 is} performed. The etching process is performed to etch a portion around the light transmitting portion 221 and the non-light transmitting portion 222, and then the patterned photoresist layer L ₃ and the partially non-light transmitting portion 222 are etched to form the light transmitting portion 221 and the non-light transmitting portion 222.

Figure 9 shows a flow chart of another method of manufacturing a storage electrode. As shown in FIG. 9, step S11 further includes steps S121 to S126, and FIGS. 10A to 10F are schematic diagrams showing a manufacturing process of the method for manufacturing the storage electrode.

As shown in FIG. 10A, step S121 is to form a non-transmissive conductive layer L ₂ on the substrate 23.

As shown in FIG. 10A, step S122 is to form a first patterned photoresist layer L ₄ on the non-transmissive conductive layer L ₂ . In the present embodiment, the coating a photoresist layer (not shown), non-light-transmitting conductive layer is exposed to light L ₂ and a development process to the L ₂ portion of the surface of the non light-transmissive conductive layer to form a first patterned light Resistance layer L ₄ .

10B, the step S123 of the non-light-transmitting conductive layer is etched portion L ₂ to form the non-transmissive portion 222. In the embodiment, the first patterned photoresist layer L ₄ and the non-transmissive conductive layer L ₂ are etched to form the non-transmissive portion 222.

10C, in step S124 to form a transparent conductive layer on the substrate 23 and non-transmissive portion 222 L _1.

As shown in FIG. 10C, step S125 is to form a second patterned photoresist layer L ₅ on the transparent conductive layer L ₁ .

10D, an etching step S126 partially transmissive conductive layer L ₁ by the light-transmitting portion 221 is formed. In the embodiment, the second patterned photoresist layer L ₅ and the light-transmitting conductive layer L ₁ are etched to form the light-transmitting portion 221 .

The order in which the light transmitting portion 221 and the non-light transmitting portion 222 are formed (ie, step S121 to step S123 and step S124 to step S126) may be reversed, and is not limited herein.

In addition, a method for manufacturing a display panel according to a preferred embodiment of the present invention includes the steps of: forming a storage electrode on a substrate, wherein the storage electrode has a light transmitting portion and a non-light transmitting portion; and forming a pixel electrode Above the storage electrode. The manufacturing method of the display panel further includes the steps of: setting a pair of substrates opposite to the substrate; and setting a liquid crystal layer Between the substrate and the opposite substrate. Since the method of manufacturing the thin film transistor substrate has been described in detail above, it will not be described again.

Furthermore, a method of manufacturing a display device according to a preferred embodiment of the present invention includes the steps of: forming a storage electrode on a substrate, wherein the storage electrode has a light transmitting portion and a non-light transmitting portion; and forming a pixel The electrode is above the storage electrode. The method for manufacturing a display device further includes the steps of: positioning a pair of substrates opposite to the substrate; disposing a liquid crystal layer between the substrate and the opposite substrate; and positioning a backlight module adjacent to the substrate. Since the method of manufacturing the thin film transistor substrate has been described in detail above, it will not be described again.

According to the present invention, a thin film transistor substrate, a display panel, a display device, and a method of fabricating the same are provided, wherein the storage electrode is disposed opposite to the pixel electrode, wherein the light transmitting portion and the non-light transmitting portion of the storage electrode are The pixel electrode forms a storage capacitor, and the storage capacitor value is increased because the area of the storage electrode is increased. Further, since the storage capacitance value can be increased by the light transmitting portion, the area of the non-light transmitting portion can be reduced, and the aperture ratio of the pixel can be improved.

The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims.

1, 2‧‧‧thin film substrate

11, 21‧‧‧ pixel electrodes

12, 22‧‧‧ storage electrode

13, 24‧‧‧ dielectric layer

14, 23‧‧‧ substrate

241‧‧‧First insulation

242‧‧‧Second insulation

14, 23‧‧‧ substrate

221‧‧‧Transmission Department

222‧‧‧ Non-transmission department

DL ₁ ~ DL _m ‧‧‧ data line

D ₁ , D ₂ , D ₃ , D ₄ ‧‧‧ distance

SL ₁ ~SL _n ‧‧‧ scan line

L ₁ ‧‧‧Light conductive layer

L ₂ ‧‧‧ non-transparent conductive layer

L ₃ ‧‧‧ patterned photoresist layer

L ₄ ‧‧‧First patterned photoresist layer

L ₅ ‧‧‧Second patterned photoresist layer

M‧‧‧ halftone dot mask

TFT ₁ ‧‧‧thin film transistor

Steps for manufacturing a thin film transistor substrate of S11~S13‧‧

S111~S114, S121~S126‧‧‧Steps for manufacturing the storage electrode

V _d ‧‧‧ data voltage

1A is a schematic view of a conventional thin film transistor substrate; FIG. 1B is a cross-sectional view taken along line A-A of FIG. 1A; and FIG. 2 is a thin film transistor base according to a preferred embodiment of the present invention. 3A is a schematic view of a pixel region of a thin film transistor substrate according to a preferred embodiment of the present invention; FIG. 3B is a cross-sectional view taken along line BB of FIG. 3A; FIG. 4A and FIG. 4B are diagrams according to the present invention. FIG. 5 is a flow chart showing a method for fabricating a thin film transistor substrate according to a preferred embodiment of the present invention; FIG. 6A to FIG. 6C are FIG. FIG. 7 is a flow chart of a method for fabricating a storage electrode of FIG. 5; FIG. 8A to FIG. 8E are schematic diagrams showing a manufacturing process of the thin film transistor substrate of FIG. 7; FIG. A flow chart of another manufacturing method of the storage electrode; and FIGS. 10A to 10F are schematic views showing a manufacturing process of the thin film transistor substrate of FIG.

2‧‧‧Thin film transistor substrate

21‧‧‧ pixel electrodes

22‧‧‧Storage electrode

221‧‧‧Transmission Department

222‧‧‧ Non-transmission department

23‧‧‧Substrate

24‧‧‧ dielectric layer

241‧‧‧First insulation

242‧‧‧Second insulation

Claims (67)

A thin film transistor substrate comprising: a plurality of rows of data lines; and a plurality of columns of scan lines, wherein the plurality of pixel regions are defined, wherein each pixel region comprises: at least one pixel electrode, at least one of the pixels The electrode is disposed opposite to the pixel electrode, the storage electrode has a light transmitting portion and a non-light transmitting portion, the boundary of the light transmitting portion is located in the pixel electrode; and a dielectric layer is disposed in the storage Between the electrode and the pixel electrode. The thin film transistor substrate according to claim 1, wherein the material of the light transmitting portion comprises indium tin oxide, indium zinc oxide, aluminum zinc oxide, gallium zinc oxide or zinc oxide. The thin film transistor substrate of claim 1, wherein the material of the non-light transmitting portion comprises copper, aluminum, molybdenum, silver, chromium, titanium, tungsten or a combination thereof. The thin film transistor substrate of claim 1, wherein the dielectric layer comprises a first insulating layer and a second insulating layer. The thin film transistor substrate of claim 1, wherein the area of the light transmitting portion is smaller than the area of the pixel electrode. The thin film transistor substrate of claim 1, wherein the area of the light transmitting portion is equal to the area of the pixel electrode. The thin film transistor substrate of claim 1, wherein the length and width of the transparent portion are smaller than the length and width of the pixel electrode. degree. The thin film transistor substrate of claim 1, wherein the length and width of the light transmitting portion are equal to the length and width of the pixel electrode. The thin film transistor substrate of claim 1, wherein the distance between each of the pixel electrodes and each of the scanning lines is greater than 3.5 μm. The thin film transistor substrate of claim 1, wherein the distance between each of the pixel electrodes and each of the scanning lines is equal to 3.5 μm. The thin film transistor substrate of claim 1, wherein the distance between the pixel electrodes of the adjacent pixels is greater than 2 micrometers. The thin film transistor substrate of claim 11, wherein the distance between the pixel electrodes of the adjacent pixels is between 3 micrometers and 3.5 micrometers. The thin film transistor substrate of claim 1, wherein the non-light transmitting portion is disposed on the light transmitting portion and is in contact with each other. The thin film transistor substrate of claim 1, wherein the light transmitting portion is disposed on the non-light transmitting portion and is in contact with each other. A display panel comprising: a pair of substrates; and a thin film transistor substrate opposite to the opposite substrate, the thin film transistor substrate having a plurality of rows of data lines and a plurality of columns of scan lines, the data lines and the The scan line defines a plurality of pixel regions, wherein each pixel region includes: at least one pixel electrode, At least one storage electrode is disposed opposite to the pixel electrode, the storage electrode has a light transmitting portion and a non-light transmitting portion, the boundary of the light transmitting portion is located inside the pixel electrode; and a dielectric layer is disposed Between the storage electrode and the pixel electrode. The display panel of claim 15, wherein the material of the light transmitting portion comprises indium tin oxide, indium zinc oxide, aluminum zinc oxide, gallium zinc oxide or zinc oxide. The display panel of claim 15, wherein the material of the non-light transmitting portion comprises copper, aluminum, molybdenum, silver, chromium, titanium, tungsten or a combination thereof. The display panel of claim 15, wherein the dielectric layer comprises a first insulating layer and a second insulating layer. The display panel of claim 15, wherein the area of the light transmitting portion is smaller than the area of the pixel electrode. The display panel of claim 15, wherein the area of the light transmitting portion is equal to the area of the pixel electrode. The display panel of claim 15, wherein the length and width of the light transmitting portion are both smaller than the length and width of the pixel electrode. The display panel of claim 15, wherein the length and width of the light transmitting portion are equal to the length and width of the pixel electrode. The display panel of claim 15, wherein a distance between the pixel electrode and the data line and a distance between the pixel electrode and the scan line is greater than 3.5 micrometers. The display panel of claim 15, wherein the painting The distance between the element electrode and the data line and the distance between the pixel electrode and the scanning line are equal to 3.5 microns. The display panel of claim 15, wherein the distance between the pixel electrodes of the adjacent pixels is greater than 2 micrometers. The display panel of claim 25, wherein the distance between the pixel electrodes of the adjacent pixels is between 3 micrometers and 3.5 micrometers. The display panel of claim 15, wherein the storage electrode is disposed on a substrate, and the pixel electrode is disposed on the storage electrode. The display panel of claim 15, wherein the non-light transmitting portion is disposed on the light transmitting portion and is in contact with each other. The display panel of claim 15, wherein the light transmitting portion is disposed on the non-light transmitting portion and is in contact with each other. The display panel of claim 15 further comprising: a liquid crystal layer disposed between the thin film transistor substrate and the opposite substrate. A display device includes: a backlight module; and a display panel disposed adjacent to the backlight module, the display panel having a pair of substrates and a thin film transistor substrate, the thin film transistor substrate and the opposite substrate In contrast, the thin film transistor substrate has a plurality of rows of data lines and a plurality of columns of scan lines, and the data lines and the scan lines define a plurality of pixel regions, wherein each pixel region The method includes: at least one pixel electrode, at least one storage electrode, opposite to the pixel electrode, the storage electrode has a light transmitting portion and a non-light transmitting portion, and the boundary of the light transmitting portion is located at the pixel electrode And a dielectric layer disposed between the storage electrode and the pixel electrode. The display device according to claim 31, wherein the material of the light transmitting portion comprises indium tin oxide, indium zinc oxide, aluminum zinc oxide, gallium zinc oxide or zinc oxide. The display device of claim 31, wherein the material of the non-light transmitting portion comprises copper, aluminum, molybdenum, silver, chromium, titanium, tungsten or a combination thereof. The display device of claim 31, wherein the dielectric layer comprises a first insulating layer and a second insulating layer. The display device according to claim 31, wherein the area of the light transmitting portion is smaller than the area of the pixel electrode. The display device of claim 31, wherein the area of the light transmitting portion is equal to the area of the pixel electrode. The display device according to claim 31, wherein the length and width of the light transmitting portion are both smaller than the length and width of the side of the pixel electrode. The display device of claim 31, wherein the length and width of the light transmitting portion are equal to the length and width of the edge of the pixel electrode. The display device of claim 31, wherein the distance between the pixel electrode and the data line and the distance between the pixel electrode and the scan line are respectively greater than about 3.5 microns. The display device of claim 31, wherein the distance between the pixel electrode and the data line and the distance between the pixel electrode and the scan line are respectively equal to about 3.5 micrometers. The display device of claim 31, wherein the distance between the pixel electrodes of the adjacent pixels is greater than 2 micrometers. The display device of claim 41, wherein the distance between the pixel electrodes of the adjacent pixels is between 3 micrometers and 3.5 micrometers. The display device of claim 31, wherein the storage electrode is disposed on a substrate, and the pixel electrode is disposed on the storage electrode. The display device according to claim 31, wherein the non-transmissive portion is disposed above the light transmitting portion and is in contact with each other. The display device of claim 31, wherein the light transmitting portion is disposed on the non-light transmitting portion and is in contact with each other. The display device of claim 31, wherein the display panel further comprises: a liquid crystal layer disposed between the thin film transistor substrate and the opposite substrate. A method for manufacturing a thin film transistor substrate, comprising the steps of: forming a storage electrode on a substrate, wherein the storage electrode has a a light transmitting portion and a non-light transmitting portion; and forming a pixel electrode on the storage electrode, wherein a boundary of the light transmitting portion is located inside the pixel electrode. The manufacturing method of claim 47, wherein the forming the storage electrode on the substrate comprises the steps of: forming a light-transmissive conductive layer on the substrate; forming a non-transparent light on the transparent conductive layer a conductive layer; forming a patterned photoresist layer on the non-transmissive conductive layer; and etching the partially transparent conductive layer and the non-transmissive conductive layer to form the transparent portion and the non-transmissive portion. The manufacturing method according to claim 48, wherein the patterned photoresist layer is formed on the substrate by exposing and developing the photoresist layer using a halftone dot mask technique. The manufacturing method of claim 47, wherein the forming the storage electrode on the substrate comprises the steps of: forming a non-transmissive conductive layer on the substrate; forming a first on the non-transmissive conductive layer Patterning the photoresist layer; etching the non-transmissive conductive layer to form the non-transmissive portion; forming a light-transmissive conductive layer on the substrate and the non-transmissive portion; forming a second patterned light on the transparent conductive layer a resist layer; and etching the partially transparent conductive layer to form the light transmissive portion. The manufacturing method of claim 47, wherein the forming the storage electrode on the substrate comprises the steps of: forming a light-transmissive conductive layer on the substrate; Forming a first patterned photoresist layer on the transparent conductive layer; etching the partially transparent conductive layer to form the transparent portion; forming a non-transmissive conductive layer on the substrate and the transparent portion; Forming a second patterned photoresist layer on the light-transmissive conductive layer; and etching the portion of the non-transmissive conductive layer to form the non-transmissive portion. The manufacturing method of claim 47, further comprising the step of forming a dielectric layer on the storage electrode before forming the pixel electrode on the storage electrode. A manufacturing method of a display panel, comprising the steps of: forming a storage electrode on a substrate, wherein the storage electrode has a light transmitting portion and a non-light transmitting portion; and forming a pixel electrode on the storage electrode, wherein The boundary of the light transmitting portion is located inside the pixel electrode. The manufacturing method of claim 53, wherein the forming the storage electrode on the substrate comprises the steps of: forming a light-transmissive conductive layer on the substrate; forming a non-transparent light on the transparent conductive layer a conductive layer; forming a patterned photoresist layer on the non-transmissive conductive layer; and etching the partially transparent conductive layer and the non-transmissive conductive layer to form the transparent portion and the non-transmissive portion. The manufacturing method according to claim 54, wherein the patterning the photoresist layer on the substrate is performed by using a halftone dot mask technique to expose and develop the photoresist layer. The manufacturing method of claim 53, wherein Forming the storage electrode on the substrate comprises the steps of: forming a non-transmissive conductive layer on the substrate; forming a first patterned photoresist layer on the non-transmissive conductive layer; etching the non-transmissive conductive layer to form the non-transmissive conductive layer a transparent portion; a transparent conductive layer is formed on the substrate and the non-transmissive portion; a second patterned photoresist layer is formed on the transparent conductive layer; and the transparent conductive layer is etched to form the transparent unit. The manufacturing method of claim 53, wherein the forming the storage electrode on the substrate comprises the steps of: forming a light-transmissive conductive layer on the substrate; forming a first pattern on the light-transmissive conductive layer a light-resisting layer; the light-transmissive conductive layer is etched to form the light-transmitting portion; a non-transmissive conductive layer is formed on the substrate and the light-transmitting portion; and a second patterned light is formed on the non-transmissive conductive layer a resist layer; and etching the portion of the non-transmissive conductive layer to form the non-transmissive portion. The manufacturing method of claim 53, wherein the forming of the pixel electrode on the storage electrode further comprises a step of forming a dielectric layer on the storage electrode. The manufacturing method according to claim 58, further comprising the steps of: facing a pair of substrates opposite to the substrate; and disposing a liquid crystal layer between the substrate and the opposite substrate. A manufacturing method of a display device, comprising the steps of: forming a storage electrode on a substrate, wherein the storage electrode has a a light transmitting portion and a non-light transmitting portion; and forming a pixel electrode on the storage electrode, wherein a boundary of the light transmitting portion is located inside the pixel electrode. The manufacturing method of claim 60, wherein the forming the storage electrode on the substrate comprises the steps of: forming a light-transmissive conductive layer on the substrate; forming a non-transparent light on the light-transmissive conductive layer a conductive layer; forming a patterned photoresist layer on the non-transmissive conductive layer; and etching the partially transparent conductive layer and the non-transmissive conductive layer to form the transparent portion and the non-transmissive portion. The manufacturing method according to claim 61, wherein the patterned photoresist layer is formed on the substrate, and the photoresist layer is exposed and developed by a halftone dot mask technique. The manufacturing method of claim 60, wherein the forming the storage electrode on the substrate comprises the steps of: forming a non-transmissive conductive layer on the substrate; forming a first on the non-transmissive conductive layer Patterning the photoresist layer; etching the non-transmissive conductive layer to form the non-transmissive portion; forming a light-transmissive conductive layer on the substrate and the non-transmissive portion; forming a second patterned light on the transparent conductive layer a resist layer; and etching the partially transparent conductive layer to form the light transmissive portion. The manufacturing method of claim 60, wherein the forming the storage electrode on the substrate comprises the steps of: forming a light-transmissive conductive layer on the substrate; Forming a first patterned photoresist layer on the transparent conductive layer; etching the partially transparent conductive layer to form the transparent portion; forming a non-transmissive conductive layer on the substrate and the transparent portion; Forming a second patterned photoresist layer on the light-transmissive conductive layer; and etching the portion of the non-transmissive conductive layer to form the non-transmissive portion. The manufacturing method of claim 60, further comprising the step of forming a dielectric layer on the storage electrode before forming the pixel electrode on the storage electrode. The manufacturing method according to claim 65, further comprising the steps of: facing a pair of substrates opposite to the substrate; and disposing a liquid crystal layer between the substrate and the opposite substrate. The manufacturing method of claim 66, further comprising the step of: arranging a backlight module adjacent to the substrate.