TWI393277B - Method for packaging light-emitting diode - Google Patents
Method for packaging light-emitting diode Download PDFInfo
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- TWI393277B TWI393277B TW98138630A TW98138630A TWI393277B TW I393277 B TWI393277 B TW I393277B TW 98138630 A TW98138630 A TW 98138630A TW 98138630 A TW98138630 A TW 98138630A TW I393277 B TWI393277 B TW I393277B
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- 238000000034 method Methods 0.000 title claims description 27
- 238000004806 packaging method and process Methods 0.000 title claims description 10
- 239000013078 crystal Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 18
- 239000002313 adhesive film Substances 0.000 claims description 9
- 230000004907 flux Effects 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000010923 batch production Methods 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- Led Device Packages (AREA)
Description
本發明是有關於一種發光二極體封裝方法,且特別是有關於一種可大量生產的發光二極體封裝方法。The invention relates to a light emitting diode packaging method, and in particular to a light emitting diode packaging method which can be mass produced.
發光二極體具有體積小、壽命長、耗電量低、反應速率快、耐震性特佳等優點。目前發光二極體應用在各種電器、通訊產品等領域十分廣泛,更有取代傳統光源的趨勢。因此必須開發出更有效率的製程,才能達到大量製造、降低成本以提高獲利的目的。The light-emitting diode has the advantages of small volume, long life, low power consumption, fast reaction rate, and excellent shock resistance. At present, the application of light-emitting diodes is widely used in various fields of electrical appliances and communication products, and has a tendency to replace traditional light sources. Therefore, it is necessary to develop a more efficient process in order to achieve mass production and reduce costs to increase profitability.
隨著降低成本與提高良率的需求,直接關係到產品的良率及生產效率的封裝、測試製程也有許多的進展。傳統的發光二極體的前段封裝製程包括晶圓切割、晶粒檢測與晶粒分類步驟,分類後的晶粒再進行打線及膠體封裝等後段封裝製程,形成封裝成品。依封裝型式的不同,可利用接腳插設或焊固等方式將封裝成品個別焊設於預設電路的電路基板上。With the need to reduce costs and increase yields, there are many advances in packaging and testing processes that are directly related to product yield and productivity. The front-end packaging process of the conventional LED includes wafer dicing, grain inspection and grain sorting steps, and the classified dies are then subjected to post-packaging processes such as wire bonding and colloidal packaging to form a packaged finished product. Depending on the package type, the packaged products can be individually soldered to the circuit board of the preset circuit by means of pin insertion or soldering.
然而,受限於打線機的數量以及封裝成品組裝的複雜度,使得發光二極體的生產效率仍受到限制。However, limited by the number of wire machines and the complexity of assembly of the packaged products, the production efficiency of the light-emitting diodes is still limited.
因此本發明之一態樣是在提供一種發光二極體封裝方法,用以大量快速生產發光二極體。Therefore, an aspect of the present invention is to provide a light emitting diode packaging method for mass production of a light emitting diode.
本發明實施方式之發光二極體晶粒封裝方法,包括提供一第一膠膜,將複數個晶粒置於第一膠膜上,並自第一膠膜取下部份晶粒,以陣列方式排列於一載台上,形成一晶粒陣列,其中晶粒陣列中的每一晶粒具有複數個電極。以整批方式自載台上移動此晶粒陣列至一基材上,基材上具有複數個銲墊分別對應晶粒陣列中每一晶粒之電極,使各銲墊與各晶粒之電極分別接合在一起。The method for packaging a light emitting diode according to an embodiment of the invention includes providing a first adhesive film, placing a plurality of crystal grains on the first adhesive film, and removing a part of the crystal grains from the first adhesive film to form an array The arrangement is arranged on a stage to form an array of dies, wherein each of the dies in the array of dies has a plurality of electrodes. Moving the die array onto a substrate in a batch manner from the stage, the substrate has a plurality of pads corresponding to the electrodes of each of the die arrays, so that the pads and the electrodes of the respective die Join together separately.
根據上述可知,本發明實施方式之發光二極體晶粒封裝方法係於晶粒分類後,直接將篩選出之晶粒排列成陣列,使整批晶粒可同時固著於基材上,完成基材與晶片之電性連接。According to the above, the LED package method of the embodiment of the present invention is to arrange the selected crystal grains into an array after the grain classification, so that the entire batch of crystal grains can be fixed on the substrate at the same time. The substrate is electrically connected to the wafer.
因此,本發明實施例之發光二極體封裝方法可大幅縮短發光二極體元件組裝及封裝時間,適用於大量生產。Therefore, the LED package method of the embodiment of the present invention can greatly shorten the assembly and packaging time of the LED components, and is suitable for mass production.
依照本發明實施方式的一種發光二極體封裝方法,晶圓經切割(Die Saw)後會同時形成晶粒及不良晶粒,每一晶粒之上表面可具有複數個電極。利用頂針由膠膜上依序取下部份晶粒,取下的晶粒以陣列方式排列於一載台上。將排列於載台上的晶粒整批貼附於另一膠膜上,移動膠膜將晶粒整批由載台上移開,再利用覆晶方式固著於一基材上。According to the LED package method of the embodiment of the present invention, after the wafer is cut (Die Saw), the crystal grains and the defective crystal grains are simultaneously formed, and the upper surface of each of the crystal grains may have a plurality of electrodes. A part of the crystal grains are sequentially removed from the film by the thimble, and the removed crystal grains are arranged in an array on a stage. The crystal grains arranged on the stage are attached to the other film in a batch, and the film is removed from the stage by moving the film, and then fixed on a substrate by flip chip.
請參照第1A-1B圖,其繪示依照本發明一實施例的一種發光二極體晶粒之封裝方法示意圖。參照第1A圖,附著於第一膠膜220上之晶圓經切割後同時形成複數個良好或是不良的晶粒230。各晶粒230具有發光元件本體232以及電極234,電極係形成於發光元件本體232上。以固定裝置210將第一膠膜220固緊擴張,使相鄰晶粒230間具有較大之適當間隔。依照本實施方式之一實施例,固定裝置210可為一擴晶環。Please refer to FIG. 1A-1B , which is a schematic diagram of a method for packaging a light emitting diode die according to an embodiment of the invention. Referring to FIG. 1A, the wafer attached to the first adhesive film 220 is simultaneously diced to form a plurality of good or bad crystal grains 230. Each of the crystal grains 230 has a light-emitting element body 232 and an electrode 234 formed on the light-emitting element body 232. The first adhesive film 220 is fastened and expanded by the fixing device 210 to have a large appropriate interval between the adjacent crystal grains 230. According to an embodiment of the present embodiment, the fixing device 210 can be a crystal expansion ring.
接著翻轉固定裝置210,使晶粒230具有電極234之一面向下,再以頂針250將經過晶粒檢測後良好的部份晶粒230向下推移,使被選取的晶粒230脫離第一膠膜220,掉落在下方的載台260上。Then, the fixing device 210 is turned over so that the die 230 has one of the electrodes 234 facing downward, and then the thimble 250 is used to push down the good portion of the die 230 after the die inspection, so that the selected die 230 is separated from the first adhesive. The membrane 220 is dropped onto the lower stage 260.
其中,固定裝置210可連接一第一移動裝置(圖未繪示),做2D平面移動以使頂針250略過不良的晶粒。隨著頂針250依序推落部份篩選出的晶粒230的同時,載台260也利用另一第二移動裝置(圖未繪示),於設定好的陣列排列路徑上做2D平面移動,即朝與固定裝置移動路徑相同之方向移動,以承接由第一膠膜220上落下的部份晶粒230,並讓篩選出的晶粒230依序排列在載台260上的預定位置上。此時,排列於載台260上的晶粒230具有電極234之一面向下。The fixing device 210 can be connected to a first moving device (not shown) to perform a 2D plane movement to cause the thimble 250 to pass through the defective crystal grains. As the thimble 250 sequentially pushes down the partially selected dies 230, the stage 260 also uses a second moving device (not shown) to perform a 2D plane movement on the set array arrangement path. That is, it moves in the same direction as the moving path of the fixing device to receive a part of the die 230 dropped by the first film 220, and the selected die 230 are sequentially arranged at a predetermined position on the stage 260. At this time, the crystal grains 230 arranged on the stage 260 have one of the electrodes 234 facing downward.
其中,篩選出的晶粒230於載台260上的排列方式可例如方形矩陣排列方式。依照本發明之實施例,陣列排列方式係依照與載台260上的晶粒230相對應之一基材上預設之銲墊的位置及數量來決定之。The arrangement of the selected crystal grains 230 on the stage 260 may be, for example, a square matrix arrangement. In accordance with an embodiment of the present invention, the array arrangement is determined by the position and number of pads pre-set on one of the substrates corresponding to the die 230 on the stage 260.
再參照第1B圖,提供固定於另一固定裝置212上的第二膠膜222,用以貼附載台260上以陣列方式排列的此部份篩選出的晶粒230。移動第二膠膜222以將此部份篩選出的晶粒230由載台260上整批移開,使以陣列方式排列的晶粒230可整批同時放置於一基材270上,且每一晶粒230之電極234分別以覆晶方式與基材270上相對應的銲 墊272接觸。Referring again to FIG. 1B, a second adhesive film 222 is attached to the other fixing device 212 for attaching the selected portion of the die 230 to the array 260. The second film 222 is moved to remove the die 230 from the portion of the stage 260 in a batch, so that the arrays of the crystal grains 230 can be placed in a batch on a substrate 270 at the same time. The electrodes 234 of a die 230 are respectively soldered to the corresponding substrate 270 Pad 272 is in contact.
依照本發明之一實施例,可將整批晶粒230的電極234沾附一助銲劑,以迴銲方式將電極234與銲墊272接合,形成發光二極體之電源接點。In accordance with an embodiment of the present invention, the electrode 234 of the entire batch of die 230 can be adhered with a flux to bond the electrode 234 and the pad 272 in a reflow manner to form a power contact of the light emitting diode.
請參照第1C圖,其繪示依照本發明一實施例的一種封裝單元剖面結構示意圖。將第1B圖所完成之覆晶結構上形成一保護層280,以保護覆晶之元件,再切割成複數個封裝單元。其中,每一封裝單元包含基材270、位於基材270上之銲墊272、晶粒230與銲墊272結合形成一覆晶結構,一保護層280包覆於覆晶結構外。Please refer to FIG. 1C , which illustrates a cross-sectional structure of a package unit according to an embodiment of the invention. A protective layer 280 is formed on the flip chip structure completed in FIG. 1B to protect the flip chip and then cut into a plurality of package units. Each of the package units includes a substrate 270, a pad 272 on the substrate 270, and the die 230 and the pad 272 are combined to form a flip chip structure, and a protective layer 280 is coated on the outside of the flip chip structure.
依照本發明之一實施例,保護層280之材質包含透明樹脂,例如可為環氧樹脂;保護層280更包含一底膠,填充於晶粒230與基材270之間的縫隙。According to an embodiment of the invention, the material of the protective layer 280 comprises a transparent resin, for example, an epoxy resin; the protective layer 280 further comprises a primer filling the gap between the die 230 and the substrate 270.
依照本發明另一實施例,晶粒230可固定於其他基材上。請參照第2A~2B圖,第2A圖係繪示依照本發明另一實施例的一種覆晶立體結構示意圖,第2B圖為第2A圖所示之覆晶結構的剖面示意圖。In accordance with another embodiment of the present invention, the die 230 can be attached to other substrates. 2A-2B, FIG. 2A is a schematic view showing a three-dimensional structure of a flip chip according to another embodiment of the present invention, and FIG. 2B is a schematic cross-sectional view showing a flip chip structure shown in FIG. 2A.
晶粒332包含發光元件本體334及二電極336,係利用與第1A~1C圖所示之類似方法,將整批篩選出的晶粒332以迴銲方式分別同時與複數導電支架350接合,之後將各導電支架350分離,形成單獨的封裝單元。The die 332 includes a light-emitting element body 334 and two electrodes 336. The entire batch of the selected die 332 is simultaneously bonded to the plurality of conductive supports 350 in a reflow manner by a method similar to that shown in FIGS. 1A to 1C. Each of the conductive supports 350 is separated to form a separate package unit.
雖然本發明已以二實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above two embodiments, it is not intended to limit the present invention, and it is obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application attached.
210‧‧‧固定裝置210‧‧‧Fixed devices
212‧‧‧固定裝置212‧‧‧Fixed devices
220‧‧‧第一膠膜220‧‧‧first film
222‧‧‧第二膠膜222‧‧‧second film
230‧‧‧晶粒230‧‧‧ grain
232‧‧‧發光元件本體232‧‧‧Lighting element body
234‧‧‧電極234‧‧‧Electrode
250‧‧‧頂針250‧‧‧ thimble
260‧‧‧載台260‧‧‧ stage
270‧‧‧基材270‧‧‧Substrate
272‧‧‧銲墊272‧‧‧ solder pads
280‧‧‧保護層280‧‧‧protection layer
332‧‧‧晶粒332‧‧‧ grain
334‧‧‧發光元件本體334‧‧‧Lighting element body
336‧‧‧電極336‧‧‧electrode
350‧‧‧導電支架350‧‧‧conductive bracket
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之詳細說明如下:第1A-1B圖係繪示依照本發明一實施例的一種發光二極體之封裝方法示意圖。The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Schematic diagram of the package method of the body.
第1C圖,其繪示依照本發明一實施例的一種封裝單元之剖面示意圖。FIG. 1C is a cross-sectional view showing a package unit according to an embodiment of the invention.
第2A圖係繪示依照本發明另一實施例的一種覆晶結構立體示意圖。2A is a perspective view showing a flip chip structure according to another embodiment of the present invention.
第2B圖為第2A圖所示之覆晶結構的剖面示意圖。Fig. 2B is a schematic cross-sectional view showing the flip chip structure shown in Fig. 2A.
210‧‧‧固定裝置210‧‧‧Fixed devices
220‧‧‧第一膠膜220‧‧‧first film
230‧‧‧晶粒230‧‧‧ grain
232‧‧‧發光元件本體232‧‧‧Lighting element body
234‧‧‧電極234‧‧‧Electrode
250‧‧‧頂針250‧‧‧ thimble
260‧‧‧載台260‧‧‧ stage
Claims (12)
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TW98138630A TWI393277B (en) | 2009-11-13 | 2009-11-13 | Method for packaging light-emitting diode |
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TW98138630A TWI393277B (en) | 2009-11-13 | 2009-11-13 | Method for packaging light-emitting diode |
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TWI393277B true TWI393277B (en) | 2013-04-11 |
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CN102956757A (en) * | 2011-08-19 | 2013-03-06 | 展晶科技(深圳)有限公司 | Manufacturing method of LED encapsulation structure |
CN105789196B (en) | 2014-12-22 | 2019-10-08 | 日月光半导体制造股份有限公司 | Optical module and method for manufacturing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5888883A (en) * | 1997-07-23 | 1999-03-30 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
TWM360444U (en) * | 2009-02-12 | 2009-07-01 | Chroma Ate Inc | Inspection jig for double-sided electrode semiconductor grain having porous conductive carrier part |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5888883A (en) * | 1997-07-23 | 1999-03-30 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
TWM360444U (en) * | 2009-02-12 | 2009-07-01 | Chroma Ate Inc | Inspection jig for double-sided electrode semiconductor grain having porous conductive carrier part |
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