TWI372242B - Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method - Google Patents
Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing methodInfo
- Publication number
- TWI372242B TWI372242B TW097101548A TW97101548A TWI372242B TW I372242 B TWI372242 B TW I372242B TW 097101548 A TW097101548 A TW 097101548A TW 97101548 A TW97101548 A TW 97101548A TW I372242 B TWI372242 B TW I372242B
- Authority
- TW
- Taiwan
- Prior art keywords
- lithographic
- device manufacturing
- processing cell
- inspection method
- lithographic processing
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70655—Non-optical, e.g. atomic force microscope [AFM] or critical dimension scanning electron microscope [CD-SEM]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706847—Production of measurement radiation, e.g. synchrotron, free-electron laser, plasma source or higher harmonic generation [HHG]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/653,441 US7916927B2 (en) | 2007-01-16 | 2007-01-16 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200839213A TW200839213A (en) | 2008-10-01 |
TWI372242B true TWI372242B (en) | 2012-09-11 |
Family
ID=39617834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097101548A TWI372242B (en) | 2007-01-16 | 2008-01-15 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
Country Status (6)
Country | Link |
---|---|
US (1) | US7916927B2 (zh) |
JP (2) | JP4782802B2 (zh) |
KR (1) | KR100919663B1 (zh) |
CN (1) | CN101261452B (zh) |
IL (1) | IL188768A (zh) |
TW (1) | TWI372242B (zh) |
Families Citing this family (15)
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US20090234692A1 (en) * | 2008-03-13 | 2009-09-17 | Tigo Energy, Inc. | Method and System for Configuring Solar Energy Systems |
US9201310B2 (en) * | 2008-08-19 | 2015-12-01 | Asml Netherlands B.V. | Method of measuring overlay error and a device manufacturing method |
NL2008500A (en) | 2011-04-21 | 2012-10-23 | Asml Netherlands Bv | Lithographic apparatus, method for maintaining a lithographic apparatus and device manufacturing method. |
US10769320B2 (en) | 2012-12-18 | 2020-09-08 | Kla-Tencor Corporation | Integrated use of model-based metrology and a process model |
US9519963B2 (en) * | 2013-05-06 | 2016-12-13 | Hercules Llc | Device and method for analysis of coating additive performance |
DE102013104666A1 (de) * | 2013-05-07 | 2014-11-13 | Krones Ag | Vorrichtung und Verfahren zum Herstellen von Behältniszusammenstellungen |
CN104199257B (zh) * | 2014-08-26 | 2016-08-24 | 合肥芯硕半导体有限公司 | 一种精密定位平台绝对定位精度的测量及补偿方法 |
WO2016177548A1 (en) | 2015-05-07 | 2016-11-10 | Asml Netherlands B.V. | Metrology method and apparatus, computer program and lithographic system |
NL2017074A (en) | 2015-07-17 | 2017-01-19 | Asml Netherlands Bv | Methods and apparatus for simulating interaction of radiation with structures, metrology methods and apparatus, device manufacturing method |
WO2017055075A1 (en) * | 2015-09-28 | 2017-04-06 | Asml Netherlands B.V. | Hierarchical representation of two-dimensional or three-dimensional shapes |
DE102015013698B9 (de) * | 2015-10-22 | 2017-12-21 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskops |
US10768533B2 (en) * | 2016-10-20 | 2020-09-08 | Kla-Tencor Corporation | Method and system for generating programmed defects for use in metrology measurements |
JP7438105B2 (ja) * | 2017-09-27 | 2024-02-26 | エーエスエムエル ネザーランズ ビー.ブイ. | デバイス製造方法の制御パラメータを決定する方法、コンピュータプログラム、および、基板にデバイスを製造するためのシステム |
EP3480659A1 (en) * | 2017-11-01 | 2019-05-08 | ASML Netherlands B.V. | Estimation of data in metrology |
JP7129356B2 (ja) * | 2019-02-13 | 2022-09-01 | キオクシア株式会社 | 測定方法 |
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JP2001084403A (ja) | 1999-09-10 | 2001-03-30 | Minolta Co Ltd | 3次元データの合成方法及び装置 |
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-
2007
- 2007-01-16 US US11/653,441 patent/US7916927B2/en active Active
-
2008
- 2008-01-09 JP JP2008002186A patent/JP4782802B2/ja active Active
- 2008-01-14 IL IL188768A patent/IL188768A/en active IP Right Grant
- 2008-01-15 TW TW097101548A patent/TWI372242B/zh active
- 2008-01-16 KR KR1020080004961A patent/KR100919663B1/ko active Active
- 2008-01-16 CN CN2008100920855A patent/CN101261452B/zh active Active
-
2010
- 2010-09-29 JP JP2010218130A patent/JP5248569B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2011040772A (ja) | 2011-02-24 |
KR20080067590A (ko) | 2008-07-21 |
US20080170780A1 (en) | 2008-07-17 |
CN101261452B (zh) | 2012-07-18 |
KR100919663B1 (ko) | 2009-09-30 |
JP5248569B2 (ja) | 2013-07-31 |
IL188768A (en) | 2013-12-31 |
CN101261452A (zh) | 2008-09-10 |
US7916927B2 (en) | 2011-03-29 |
JP2008249686A (ja) | 2008-10-16 |
IL188768A0 (en) | 2008-11-03 |
JP4782802B2 (ja) | 2011-09-28 |
TW200839213A (en) | 2008-10-01 |
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