TWI358126B - Contiguous microlens array, method of fabricating - Google Patents
Contiguous microlens array, method of fabricating Download PDFInfo
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1358126 UMCD-2007-0159 24477twf.doc/p 九、發明說明: • f發明所屬之技術領域】 本發明是有關-種影像記錄裝置,特別是有關連續性 • ㈣透鏡㈣、錢造方法以及其;CA料罩,可應用在 各種須聚光至感光元件的影像記錄裝置上。 ^ 【先前技術】 在習知的半導體影像記纟錄置,如電储合元件(ccD) • 《互補式金氧半導體元件(CM〇s)影像記錄裝置中,為提高 感光元件的靈敏度,通常會在感光元件陣列上方設置微透 鏡陣列,其中任一微透鏡會將光線聚焦在一個感光元件上。 • _ ®认是習知微透鏡陣列的局部等高線圖,圖1B則顯 • *出其中—倾透鏡在不同角度截面上的高度變化。由於 習知每-個微透鏡110是由形成在基層1〇上大致呈方形的 光阻圖案加熱回熔(refl〇w)而成形的,所以其下半部的等高 綠輪廓趨近方形,如圖1A所示,使微透鏡n〇在不同角 •,截面上有不同曲率。請見1UB,45。截面(B-B,)的曲率半 禮明顯大於0。截面(A-A’)的。由於焦距和曲率半徑有關, 所以白知的微透鏡11〇有聚焦特性不良的問題。另外,因 為微透鏡110彼此不連接,所以其間有無法聚光的平直部 分存在,而無法收集到所有光線以有效聚光。 _習知的微透鏡陣列還有與影像記錄裝置中其他構件整 •^不易的問題’以Tf即以感光^件是光二極體(phGt〇di〇de) =CMOS影像記錄裝置為例作說明。圖2是習知— 影像記錄裝置的部分簡圖,其中微透鏡陣列1〇〇製作於透 5 1358126 UMCD-2007-0159 24477twf.doc/p • 光的基層10上,此基層10包栝彩色濾光片陣列12及其他 功此層,且位於多層内連線結構2〇上。多層内連線、蜂構 20含第一層内連線22及第二層内連線24,且位於光二極 體陣列30上方。此CMOS影像記錄裝置的目鏡4〇設置於 微透鏡陣列100上方一段距離處。 由於微透鏡陣列100周邊部分之微透鏡11〇的入射光 50入射角偏離90° (在此處及下文十,9G。方向就是影像感 • 測晶片的法線方向)過多,故焦點不在其正下方,因此相對 於對應之光二極體30必須有—橫向位移,以使焦點落在該 光一極體30上’如圖2所示。然而,如此該微透鏡ιι〇 的出射光50a會被第二層内連線24擋住一部分,而會降低 f像周邊部分的記錄正確性。此問題雖可藉由對應部分之 第層内連線24的;^向移位來解決,但如此會增力口電路言受 計上的麻煩。 【發明内容】 本發明的目的就是在提供一種連續性微透鏡陣列,其 可解決習知微透鏡聚焦不良的問題,或可進一步在不改變 内連線位置的情形下㈣影像周邊部分的記錄正確性。 本發明又一目的是提供一種連續性微透鏡陣列的製造 法,其可用以形成本發明的微透鏡陣列。 本發月的再目的是提供一種光罩,其可用於本發明 、連續性微錢㈣製造方法,以定義連續鎌透鏡陣列。 y先須特別說明的是,下文及申請專利範圍中所謂的 、夕邊幵y」白思指邊數大於4者,如同一般的認知。 1358126 UMCD-2007-0159 24477twf.doc/p 本發明之連續性微透鏡陣列包括呈連續狀的多個微透 鏡’其中每一個微透鏡在其與相鄰之微透鏡相連處以上的 各尚度的等高線輪廓大致呈圓形,且在與相鄰之微透鏡抵 接相連處之各高度的等高線輪廓大致呈部分圓形。 在一實施例中’上述連續性微透鏡陣列中的各微透鏡 之間沒有空隙,而可收集到所有光線。在另一實施例中, 任兩相鄰之微透鏡的相連處的厚度接近〇。 在一實施例中,上述連續性微透鏡陣列位在一光二極 體陣列上方,且與後者之間有至少一内連線層。此至少一 内連線層與微透鏡陣列之間可有一彩色濾光片陣列。 在一實施例中,上述微透鏡陣列位在一感光元件陣列 上方,其中每一個微透鏡對應一個感光元件,且在各方向 的垂直截面大致呈對稱狀。此微透鏡陣列區分為一中間呷 分與位於中_分外_至少-個周邊部分,此區分依據 光入射角度不同而定,其中位在中間部分的任—個微透鏡 對準其所對應的感光元件,位在該至少—個周邊部分的任 一個微透鏡相對於其所對應的感光元件則有一橫向位浐。 在此情形下,任-個微透鏡的表面可大致為—曲面,^如 是-部分球面。另外,上述感光元件陣列可為—光 陣列或一電荷耦合元件(CCD)陣列。 _ —在另-實施财,任—個微透鏡觸準其 光兀件’位在中間部分的任—個微透鏡在各方向的 面大致呈對稱狀,而位在該至少一個周邊部分的任 透鏡則具有不對稱的垂直截面形狀。在此情形下,位1358126 UMCD-2007-0159 24477twf.doc/p IX. Description of the invention: • Technical field to which the invention belongs: The present invention relates to an image recording apparatus, and more particularly to continuity (four) lenses (four), methods of making money, and the like; The CA cover can be applied to various image recording devices that need to be collected to the photosensitive member. ^ [Prior Art] In the conventional semiconductor image recording, such as the electric storage component (ccD) • In the complementary CMOS device (CM〇s) image recording device, in order to improve the sensitivity of the photosensitive element, usually A microlens array is placed over the array of photosensitive elements, with either microlens focusing the light onto a photosensitive element. • _® is a partial contour plot of a conventional microlens array, and Figure 1B shows the height variation of the tilted lens at different angles. Since it is conventionally known that each of the microlenses 110 is formed by heating and remelting a resist pattern formed on the base layer 1 大致, the contour of the lower half is square, As shown in Fig. 1A, the microlenses are made to have different curvatures in the cross section. See 1UB, 45. The curvature of the section (B-B,) is significantly greater than zero. Section (A-A'). Since the focal length is related to the radius of curvature, the microlens 11 of Baizhi has a problem of poor focusing characteristics. In addition, since the microlenses 110 are not connected to each other, there is a flat portion in between which there is no possibility of collecting light, and it is impossible to collect all the light rays for effective condensing. _The conventional microlens array also has problems with other components in the image recording device. The Tf is a photodiode (phGt〇di〇de) = CMOS image recording device. . 2 is a partial schematic view of a conventional image recording apparatus in which a microlens array 1 is fabricated on a base layer 10 of 5 1358126 UMCD-2007-0159 24477twf.doc/p • light, and the base layer 10 is coated with a color filter. The light film array 12 and other layers are disposed on the multilayer interconnect structure 2A. The multilayer interconnect, the bee structure 20 includes a first interconnect 22 and a second interconnect 24, and is located above the photodiode array 30. The eyepiece 4 of the CMOS image recording apparatus is disposed at a distance above the microlens array 100. Since the incident angle of the incident light 50 of the microlens 11〇 at the peripheral portion of the microlens array 100 is deviated by 90° (here and below, 9G, the direction is the normal direction of the image sensing wafer), the focus is not positive. Below, therefore, there must be a lateral displacement relative to the corresponding photodiode 30 so that the focus falls on the photo-pole body 30' as shown in FIG. However, the outgoing light 50a of the microlens ιι is thus blocked by the second layer inner wiring 24, and the recording accuracy of the peripheral portion of the f image is lowered. Although this problem can be solved by the displacement of the corresponding layer of the first layer 24, it will increase the power of the circuit. SUMMARY OF THE INVENTION An object of the present invention is to provide a continuous microlens array which can solve the problem of poor focus of conventional microlenses, or can further record the peripheral portion of the image without changing the position of the interconnect line. Sex. It is still another object of the present invention to provide a method of manufacturing a continuous microlens array which can be used to form the microlens array of the present invention. A further object of the present month is to provide a reticle that can be used in the present invention, a continuous micro (four) manufacturing method to define a continuous 镰 lens array. y must first specify that the so-called "Yi 幵 幵 y" refers to the number of sides greater than 4 below, as in the scope of the patent application, as in general cognition. 1358126 UMCD-2007-0159 24477twf.doc/p The continuous microlens array of the present invention comprises a plurality of microlenses in a continuous shape, wherein each of the microlenses is at a position above its connection with an adjacent microlens The contour contours are generally circular in shape, and contour contours of respective heights at abutment with adjacent microlenses are generally partially circular. In one embodiment, there is no gap between the microlenses in the continuous microlens array described above, and all of the light is collected. In another embodiment, the thickness of the junction of any two adjacent microlenses is close to 〇. In one embodiment, the continuous microlens array is positioned above a photodiode array with at least one interconnect layer between the latter. There may be an array of color filters between the at least one interconnect layer and the microlens array. In one embodiment, the microlens array is positioned above an array of photosensitive elements, wherein each microlens corresponds to a photosensitive element and has a substantially vertical cross section in each direction. The microlens array is divided into an intermediate split and a middle_external_at least-peripheral portion, the distinction being made according to different incident angles of light, wherein any microlens positioned in the middle portion is aligned with the corresponding The photosensitive element, any one of the microlenses located in the at least one peripheral portion has a lateral position 相对 relative to the corresponding photosensitive element. In this case, the surface of any one of the microlenses may be substantially a curved surface, such as a partial spherical surface. Further, the above-mentioned photosensitive element array may be an optical array or a charge coupled device (CCD) array. _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The lens has an asymmetrical vertical cross-sectional shape. In this case, bit
•J _ I 7 1358126 24477twf.doc/p UMCD-2007-0159 間部分的每一個微透鏡的表面亦可大致為一曲面 一部分球面。 j如疋 /、本發明之微透鏡陣列的製造方法包括以下步騾。 ^了光阻圖案陣列,其中每—個光阻圖案的上視輪 圓形或多邊形,且相鄰光阻圖案彼此相連或靠近: 者、仃一回熔步驟,其包括加熱該光阻圖案陣列,以 ^阻圖案的表面圓化,並使彼此靠近之相鄰光阻圖 連。然後進行-定形步驟,以固定各光阻圖案的形狀^ 宰陣^一 =例=/述定形步驟使用紫外光照射光随圖 木陣列。在另一貫施例中,上述定形步驟包括進一 光阻圖案P,’其所設定之溫度高於該回熔步驟所設二: 在一實施例中,於該回熔步驟進行之前, f的表面可有—不均勻的高度分佈,其高度由内向t t此種光阻圖案陣列可由單—個光罩狀義,此光罩」 使ΐΓ"個光阻随的—光罩具有—透光率分佈,以 使對應之光阻®案的表面具㈣不均勻的高度分佈。 在光_轉财每—㈣具不均扣表面高度分佈 中’每—個光阻圖案可包括大致呈圓形或多邊形 =部分,以及其外圍大致呈圓形或多邊形 :該=分㈣-個環狀片段,而當每個光阻圖案包 〜或更夕個%狀片段時,各環狀片段的高度不—,• J _ I 7 1358126 24477twf.doc/p UMCD-2007-0159 The surface of each microlens between the sections can also be roughly a spherical surface. j. The method of manufacturing the microlens array of the present invention comprises the following steps. An array of photoresist patterns, wherein the upper view wheel of each of the photoresist patterns is circular or polygonal, and adjacent photoresist patterns are connected to each other or close to each other: a remelting step comprising heating the array of photoresist patterns The surface of the pattern is rounded and the adjacent photoresists are connected close to each other. Then, a shaping step is performed to fix the shape of each photoresist pattern. ^ Instance = Example = / The step of structuring uses ultraviolet light to illuminate the light with the array. In another embodiment, the shaping step includes a photoresist pattern P, which is set to a temperature higher than the second step of the reflow step: in one embodiment, before the reflow step, the surface of f There may be a non-uniform height distribution, the height of which is from the inward direction tt. The array of photoresist patterns can be defined by a single mask, and the mask can make the light-resistance distribution of the photoresist. In order to make the surface of the corresponding photoresist® (4) unevenly distributed. In the light-transfer wealth-(four) with uneven surface height distribution, 'each photoresist pattern may include a substantially circular or polygonal=section, and its periphery is substantially circular or polygonal: the = minute (four) - a circular segment, and when each resist pattern is wrapped or more than a % segment, the height of each segment is not -,
=向外遞減。此種光阻圖案陣列可由單—光罩所 I 二括二透光基板及-光罩圖案陣列。在此光罩圖案陣歹: ,母-個光罩圖案對應光阻圖案陣列中的—個光阻圖 8 UMCD-2007-0159 24477twf.doc/p 案,相鄰之光罩圖案彼此隔開,其隔開之距離使得相鄰之 光阻圖案可彼此相連或靠近。每個光罩圖案中有至少一個 露出部分透光基板的環狀分隔道,其大致呈圓形或多邊形。 在母個光阻圖案皆包括前述柱狀部分及其外圍至少一 個環狀片段的一個實施例中,從上方觀視時,每一個光阻 圖案的柱狀部分的中心與該至少一個環狀片段的中心大致 重合,且光阻圖案陣列區分為一中間部分與其外圍的至少 一個周邊部分,此區分依光入射角度不同而定。位在中間 部分的每一個光阻圖案對準其所對應的感光元件,位在該 至少一個周邊部分的每一個光阻圖案相對於其所對應的感 光元件體則有一橫向位移。另外,上述感光元件可為光二 極體或電荷耦合元件(CCD)。 在每個光阻圖案皆包括柱狀部分及其外圍至少一個環 狀片段的另一實施例中,光阻圖案陣列中的每一個光阻圖 案所在之區域皆對準其所對應的感光元件。當從上方觀視 時,位在中間部分的每一個光阻圖案的柱狀部分的中心與 該至少一個環狀片段的中心大致與該光阻圖案所在之區域 的中心重合,而在位在該至少一個周邊部分的每一個光阻 圖案中’該柱狀部分的中心與該至少一個環狀片段的中心 皆相對於該光阻圖案所在之區域的中心有一位移。 在此須特別說明的是’本說明書中所謂的「環狀片段」 包括完整的環狀片段以及不完整的環狀片段,詳情請見後 文實施例之說明。 本發明之光罩是用以定義一連續性微透鏡陣列,包括 1358126 UMCD-2007-0159 24477twf.doc/p ΐί Γ光罩圖案_。在此光罩圖轉列中,每 -個光罩圖案定義微透鏡陣列中的_個微透鏡之前:一 個光阻圖案’此光阻圖案的上視輪廓大致呈圓 形。相鄰之光罩圖餘此關,其隔開之麟對^ 光阻圖案可彼此相連或靠近。每—個光罩圖案皆具有 光率分佈可使對應之光_案的表面具有不均勾 度分佈’其面度由内向外遞減。= decrement outward. The array of photoresist patterns can be formed by a single-mask, a two-transparent substrate, and a mask pattern array. In this mask pattern, the mother-to-smoke pattern corresponds to a photoresist pattern in the array of photoresist patterns. UMCD-2007-0159 24477twf.doc/p, the adjacent mask patterns are separated from each other. They are spaced apart such that adjacent photoresist patterns can be connected to or close to each other. Each of the reticle patterns has at least one annular dividing passage exposing a portion of the light transmissive substrate, which is substantially circular or polygonal. In one embodiment in which the parent photoresist pattern includes the aforementioned columnar portion and at least one of the peripheral annular segments, the center of the columnar portion of each photoresist pattern and the at least one annular segment are viewed from above. The centers of the photoresist patterns are substantially coincident, and the array of photoresist patterns is divided into an intermediate portion and at least one peripheral portion of the periphery thereof, the distinction being made depending on the angle of incidence of the light. Each of the photoresist patterns positioned in the intermediate portion is aligned with the corresponding photosensitive member, and each of the photoresist patterns positioned in the at least one peripheral portion has a lateral displacement relative to the corresponding photosensitive member body. Further, the above-mentioned photosensitive element may be a photodiode or a charge coupled device (CCD). In another embodiment in which each of the photoresist patterns includes a columnar portion and at least one annular segment thereof, each of the photoresist patterns in the array of photoresist patterns is aligned with its corresponding photosensitive element. When viewed from above, the center of the columnar portion of each of the photoresist patterns located at the intermediate portion and the center of the at least one annular segment substantially coincide with the center of the region where the photoresist pattern is located, and are in position In each of the photoresist patterns of the at least one peripheral portion, a center of the columnar portion and a center of the at least one annular segment are displaced relative to a center of a region where the photoresist pattern is located. It should be particularly noted here that the "ring segment" referred to in the present specification includes a complete circular segment and an incomplete circular segment. For details, please refer to the description of the following examples. The reticle of the present invention is used to define a continuous microlens array, including 1358126 UMCD-2007-0159 24477twf.doc/p ΐί Γ 图案 pattern _. In this reticle transfer, each reticle pattern defines _ microlenses in the microlens array: a photoresist pattern' The top view profile of the photoresist pattern is substantially circular. The adjacent reticle maps remain closed, and the separated linings can be connected to or close to each other. Each of the reticle patterns has a light-rate distribution such that the surface of the corresponding light pattern has a non-uniform hook distribution' whose face decreases from the inside to the outside.
在-些實施例中,每一個光罩圖案中有露出部分透光 基板的至少-個環狀分隔道,其職大致呈κ形或正多邊 形。在-實施例中’每-個光罩圖案中的各環狀分隔道的 中心與此光罩II案的中心重合,用以定義微透鏡陣列之中 間部分的任-個微透鏡的光罩_對準其所對應的感光元 件,且用以定義微透鏡陣列之至少一個周邊部分的任一個 微透鏡的光罩圖案相對於其所對應的感光元件則有一橫向 位移。在另一實施例中’每一個光罩圖案所在之區域對準 其所對應的感光元件,用以定義中間部分任一個微透鏡的 光罩圖案中的環狀分隔道的中心與此光罩圖案所在之區域 的中心大致重合,且在用以定義周邊部分任一個微透鏡的 光罩圖案中,每一個環狀分隔道的中心皆相對於此光罩圖 案所在之區域的中心有一位移。另外,上述感光元件可為 光二極體或電荷耦合元件(CCD)。 在本發明中’由於每一個微透鏡在其與相鄰之微透鏡 相連處以上的各高度具有大致呈圓形的等高線輪廓且在與 相鄰之微透鏡抵接相連處之各高度的等高線輪廓大致呈部 1^58126 24477twf.doc/p ^00-2007.0159 分圓形,所以當—個微透鏡在各方向的 對稱的截面形狀時,其在各角度之截面形狀=率;= 小於習知的方底_微透鏡,而可達到較佳的聚焦效果: ^古ί各微透鏡間無空隙的實施例中’因為微透鏡陣列 中〉又有平直部分,故可收集所有光線以增加光的收集效益。 弁备在本發明—實施例中,由於位在周邊部分入射 先角度偏離9〇。過多的每一個微透鏡具有不對稱的 ,形狀,而得⑽㈣光肢修正回9G。左右,所以中^ 邛分及周邊部分的每一個微透鏡都可以對準對應之光一極 體,而不必位移。因此,位於微透鏡陣列的周^部分;^ 的内連線路也不必位移,而可省去修改電路設計的麻煩。 為讓本發明之上述和其他目的、特徵和優點更、 下文特舉較佳實施例並配合所附圖式,詳細說明如下易 【貫施方式】 第一實施例 在本發㈣-實關巾’每個微透鏡在各方向的垂直 截面具有大輯稱的雜。位在微透鏡_ 個微透㈣對準其所對應的光二簡,而在至少 分的每個微透鏡姆於其所對躺H極 二 位移’以使其焦點可以落在後者上。由於圖2已緣出此種 配置方式’故第-實施例的相關圖式並未緣出各微透鏡及 其所對應之各光二極體的位置關係。 另外,由於位在微透鏡陣列中間部分的每個微透鏡皆 對準其所對應的光二極體,所以作為t間部分任一微透鏡 11 1358126 UMCD-2007-0159 24477twf.d〇c/p 的刖身的姐_及心定義此光阻圖_光罩圖案皆對 準此微透鏡賴應的光二極體。由於周邊部分的每個微透 ,相對於其所對應的光二極體有—橫向位移所以作為周 邊部分任-微透鏡的前身的光阻圖案及㈣定義此光阻圖 案的光罩Bf皆姉於此微透鏡所對應的光二極體有一橫 向位移。此種關係應廣為本領域者所知,故未緣於圖式怜 f是本發明第—實施例之一例之微透鏡陣列的局 料南線I此微透鏡陣列包括呈連續 配置於基層10上,其中每個微透鏡31〇a^H ^微透鏡3l〇a相連處以上的各高度具有大致呈圓形的 =门線輪廓,且在與相鄰之微透鏡抵接相連處之各高产的 等高線輪廓大致呈部分圓形。由圖3A可看出,每一^微 透=在各方向的垂直截面上皆具有大致對稱的截面形狀: 故。其在各角度之截面形狀的曲率皆大致相同,請見圖3β, 截面(Β-Β’)的曲率半徑大致等於〇。截面(Α_Α,)的曲率半 心'。在此例中,相鄰之微透鏡310a並未完全密接,其間留 有小空隙而暴露出少部分的基層10。 圖3C、3D分別為本發明第一實施例之另二種態 微透鏡陣列的局部料線ffi。 ’ 一凊參照圖3C ’此例之微透鏡陣列的結構與前例圖3a 不者大致相同,除了相鄰之微透鏡310c完全連接,而未 暴露出基層1〇的空隙之外。由於此例之相鄰微透鏡 效各方向上皆連續,所以可以收集到全部的光線來ί 12 1358126 UMCD-2007-0159 24477twf. doc/p 請參照圖3D,此例之微透鏡陣列的处 所示者大致姻,除了任_ _透鏡3&的彳目^圖= 度等於0,即相鄰微透鏡310d的邊緣恰好接觸勺子 由於貫際製程中必然有一些誤差,不可能 k 鏡刪的邊緣皆恰好接觸,所以考量到實際敎 此例中相鄰微透鏡310d之相連處的厚度「接近〇。乂仏栖In some embodiments, each of the reticle patterns has at least one annular dividing channel exposing a portion of the light transmissive substrate, the lands being substantially K-shaped or orthogonally polygonal. In the embodiment, the center of each of the annular lanes in each of the mask patterns coincides with the center of the mask II to define a mask of any one of the microlenses in the middle portion of the microlens array. The reticle pattern of any one of the microlenses used to define the at least one peripheral portion of the microlens array is aligned with respect to its corresponding photosensitive element. In another embodiment, the area where each reticle pattern is located is aligned with its corresponding photosensitive element to define the center of the annular dividing track in the reticle pattern of any one of the microlenses in the middle portion and the reticle pattern. The centers of the regions are substantially coincident, and in the reticle pattern for defining any of the microlenses in the peripheral portion, the center of each of the annular segments is displaced relative to the center of the region in which the reticle pattern is located. Further, the above-mentioned photosensitive element may be a photodiode or a charge coupled device (CCD). In the present invention, a contour contour of each height at which each microlens has a substantially circular contour contour at each height above its connection with an adjacent microlens and is abutted adjacent to the adjacent microlens. The general portion 1^58126 24477twf.doc/p ^00-2007.0159 is circular, so when the symmetry cross-sectional shape of the microlens in all directions, its cross-sectional shape at each angle = rate; = less than the conventional Square bottom _ microlens, and can achieve better focusing effect: ^In the embodiment without gap between microlenses, 'because the microlens array has a flat part, it can collect all the light to increase the light. Collect benefits. In the present invention - the embodiment, since the position is incident on the peripheral portion, the angle is first shifted by 9 〇. Too many of the microlenses have an asymmetrical shape, and the (10) (four) light limbs are corrected back to 9G. Left and right, so each microlens in the middle and the peripheral part can be aligned with the corresponding light one without having to be displaced. Therefore, the interconnecting lines located in the periphery of the microlens array do not have to be displaced, and the trouble of modifying the circuit design can be omitted. The above and other objects, features and advantages of the present invention will become more apparent from the following description of the preferred embodiments of the invention. 'The vertical section of each microlens in each direction has a large number of miscellaneous. The position of the microlens _ micro-transparent (four) is aligned with the corresponding light, and at least each of the micro-lenses is displaced by its lying H-pole to make its focus fall on the latter. Since the arrangement of Fig. 2 is such that the arrangement of the first embodiment does not result in the positional relationship of the respective microlenses and their respective photodiodes. In addition, since each microlens positioned in the middle portion of the microlens array is aligned with its corresponding photodiode, any microlens 11 1358126 UMCD-2007-0159 24477twf.d〇c/p is used as the inter-t portion. The slim sister _ and the heart define this photoresist diagram _ the reticle pattern is aligned with the photodiode of the microlens. Since each of the peripheral portions is slightly transparent, there is a lateral displacement relative to the corresponding photodiode, so that the photoresist pattern of the predecessor of the microlens as the peripheral portion and (4) the photomask Bf defining the photoresist pattern are inconsistent The photodiode corresponding to the microlens has a lateral displacement. Such a relationship should be widely known to those skilled in the art, so that the micro-lens array of the microlens array of the first embodiment of the present invention is not included in the pattern. The microlens array includes a continuous arrangement on the base layer 10. Each of the heights above the junction of each of the microlenses 31 〇 a ^ H ^ microlens 31 〇 a has a substantially circular = gate line profile, and each of the high yields at the point of contact with the adjacent microlenses The outline of the contour is roughly circular. As can be seen from Fig. 3A, each of the micro-transmissions has a substantially symmetrical cross-sectional shape in a vertical section in each direction: The curvature of the cross-sectional shape at each angle is substantially the same, as shown in Fig. 3β, and the radius of curvature of the section (Β-Β') is approximately equal to 〇. The radius of the section (Α_Α,) is half a heart'. In this case, the adjacent microlenses 310a are not completely in close contact with a small gap therebetween to expose a small portion of the base layer 10. 3C and 3D are partial feed lines ffi of the other two types of microlens arrays of the first embodiment of the present invention, respectively. Referring to Fig. 3C, the structure of the microlens array of this example is substantially the same as that of Fig. 3a of the previous example except that the adjacent microlenses 310c are completely connected without exposing the voids of the base layer 1〇. Since the adjacent microlenses in this example are continuous in all directions, all the light can be collected. ί 12 1358126 UMCD-2007-0159 24477twf. doc/p Please refer to FIG. 3D, the location of the microlens array of this example. The viewer is roughly married, except for the _ lens 3 & eye = ^ degree = 0, that is, the edge of the adjacent microlens 310d just touches the spoon. Because there must be some error in the continuous process, it is impossible to delete the edge of the mirror. All are in good contact, so consider the actual thickness of the adjacent microlens 310d in this example.
微透鏡收集光線的效率可達78%左右,仍遠t圖、: 之習知方底圓頂微透鏡的65%左右。 、圖4A〜4C _本發明—實_之微透鏡陣列的製造 方法,其作)/(b)分騎稍欲形成级魏完全相 留空隙/邊緣恰好相連的例子。The efficiency of collecting light by the microlens can reach about 78%, which is still far from the figure, which is about 65% of the conventional dome microlens. 4A to 4C - The method of manufacturing the microlens array of the present invention is performed. / (b) An example in which the sub-riding is slightly formed to form a complete phase gap/edge is just connected.
請參照圖4A,首先在基層1〇之各微透鏡預定形成區 60上形成多個光阻圖案3G2/312,其構成—光阻圖幸陣 列。每一個光阻圖案302/312的上視輪廓大致呈圓形,且 相鄰之光阻圖案彼此相連(302)或靠近(312),使得回溶步驟 之後相鄰之光阻圖案可以相連。每一個光阻圖案3〇2/312 包括大致呈圓形的一柱狀部分3〇2a/312a,以及其外圍大致 呈圓形且高度低於柱狀部分3〇2a/312a的多個環狀片段 302b(c)/312b’各環狀片段3〇2b(c)/312b的高度不同,且由 内向外遞減。 此處須特別說明的是’圖4A(a)例的光阻圖案302的 環狀片段包括完整的環狀片段3〇2b以及外圍不完整的環 狀片段302c,二者於本案說明書及申請專利範圍中泛稱為 「環狀片段」,其中不完整的環狀片段3〇2c與相鄰之光阻 1358126 UMCD-2007-0159 24477twf.doc/p 圖案302的不完整環狀片段302c相連;又對一個不完整環 狀片段302c而言,其中心是指包含其本身在内的一個假想 環的中心。如圖4A⑻/(b),每個光阻圖案3〇2/312的柱狀 部分302a/312a的中心與各環狀片段3〇2b(c)/312b的中心 大致重合’且與對應之微透鏡預定形成區6〇的中心重合。 請再參照圖4A(a) ’相鄰4個光阻圖案302的最外圈 環狀片段302c圍出一個小空隙,其暴露出少部分基層1〇。Referring to Fig. 4A, first, a plurality of photoresist patterns 3G2/312 are formed on the respective microlens predetermined formation regions 60 of the base layer 1 to constitute a photo-resistance array. The top view profile of each of the photoresist patterns 302/312 is substantially circular, and adjacent photoresist patterns are connected (302) or close to each other (312) such that adjacent photoresist patterns can be connected after the post-dissolving step. Each of the photoresist patterns 3〇2/312 includes a substantially circular cylindrical portion 3〇2a/312a, and a plurality of rings having a substantially circular outer periphery and a lower height than the columnar portion 3〇2a/312a. The segments 302b(c)/312b' each of the annular segments 3〇2b(c)/312b have different heights and are decremented from the inside to the outside. It should be particularly noted here that the annular segment of the photoresist pattern 302 of the example of FIG. 4A(a) includes the complete annular segment 3〇2b and the peripherally incomplete annular segment 302c, both of which are described in the present specification and claimed. The range is generally referred to as a "ring segment" in which the incomplete ring segment 3〇2c is connected to the incomplete ring segment 302c of the adjacent photoresist 1358126 UMCD-2007-0159 24477twf.doc/p pattern 302; In the case of an incomplete circular segment 302c, the center refers to the center of an imaginary ring including itself. 4A(8)/(b), the center of the columnar portion 302a/312a of each of the photoresist patterns 3〇2/312 substantially coincides with the center of each of the annular segments 3〇2b(c)/312b' and corresponds to The centers of the lens predetermined formation regions 6〇 coincide. Referring again to Fig. 4A(a), the outermost annular segment 302c of the adjacent four photoresist patterns 302 encloses a small gap which exposes a small portion of the substrate 1〇.
再者’此例t柱狀部分302a及環狀片段3㈣⑻各自的形 狀可改成多邊形’如圖4D(a)中標號3〇2,、302a,、302b,、 302c’者所示。由於多邊形光阻圖案的各角會在後續回熔時 圓化,故其結果與圓形光阻圖案的情況相去不遠。 圖4A(b)之例的光阻圖案312的環狀片段則僅包括完 整的環狀片段mb,其中最外圈的完整環狀片段312b與 相鄰之光阻圖案312最外圈的完整環狀片段31訃足夠靠 近,使得兩光阻圖案312可在回熔之後相連。此例中柱狀Further, the shape of each of the t-column portion 302a and the annular segment 3 (four) (8) can be changed to a polygonal shape as shown by reference numerals 3〇2, 302a, 302b, and 302c' in Fig. 4D(a). Since the corners of the polygonal photoresist pattern are rounded at the subsequent remelting, the result is not far from the case of the circular photoresist pattern. The annular segment of the photoresist pattern 312 of the example of FIG. 4A(b) includes only the complete annular segment mb, wherein the complete annular segment 312b of the outermost ring and the complete ring of the outermost ring of the adjacent photoresist pattern 312 The segments 31 are close enough that the two photoresist patterns 312 can be joined after reflow. Column in this case
部分312a及環狀片段312b各自的形狀亦可改成多邊形, 如圖4D(b)中標號312,、312a,、⑽,者所示。由於多邊形 =阻圖案的各角會在回料圓化,故其結果額形光阻圖 术的情況相去不遠。 請參_ 4B,接著進行回料驟3()4,其包括加熱上 心光阻圖案陣列,以使每—個光阻圖案地m2的 成表。面圓化的光阻圖案3〇6/316,其加熱溫度例 m ^〜140 C,時間例如約1〇〜15分鐘。當光阻圖案302/ 的表面具㈣當的高度分佈時,級圖案而316的 1358126 UMCD-2007-0159 24477twf.doc/p 表面可趨近球面307/317的一部分。 另外,對圖4A(a)之光阻圖案陣列而言,其在回熔時4 個相鄰之光阻圖案302的最外圈環狀片段3〇2c的光阻會流 到其間的小空隙巾,使得各微魏具有完純滿其預定形 成區60的曲面。對圖4A(b)之各光阻圖案而言,其在回熔 時最外圈之環狀片段312b的光阻會向外流動,而使原先不 相連的相鄰光阻圖案312相連。 請參照圖4C,接著進行定形步驟3〇8,以除去表面圓 化光阻圖案306/316中殘留的溶劑,而得以固定每個表面 圓化光阻圖案306/316的形狀,從而形成微透鏡3i〇c/ 310d。在例中,疋开>步驟是使用紫外光照射光阻圖 案陣列,所用紫外光波長例如約365人,強度例如約3⑻ mJ/cm2,處理時間例如約1〇〜15分鐘。在另一例中,定形 步驟308包括進一步加熱光阻圖案陣列,其所設定之溫度 高於回熔步驟304,例如約180〜200〇c,處理時間則例如 約10〜15分鐘。 可定義出圖4A(a)/(b)所繪示之光阻圖案的光罩圖案的 一例的上視圖繪於圖5(a)/(b)。此光罩包括透光基板 500/530以及位在對應各微透鏡形成區6〇的各個區域 502/532巾❹個光翔案51G/54(),其構朗應微透鏡陣 列的光罩圖案陣列。 在圖5⑻之例中,各光罩圖案51〇基本上為方形單位 圖案,其彼此隔開,且其中每個光罩圖案51〇包括暴露出 部分透光基板500、用以定義出光阻圖案之環狀片段的環 15 1358126 UMCD-2007-0159 24477twf.doc/p 狀为隔這520 ’其中任兩相鄰環狀分隔道52〇為内外圈關 係=狀分胳道520包括完整的環狀分隔道5池及其外圍 不完整的環狀分隔道520b ’這兩種環狀分隔道在本說明查 及申請專利範圍中皆泛稱為「環狀分隔道^ "The shape of each of the portion 312a and the annular segment 312b may also be changed to a polygon, as shown by reference numerals 312, 312a, and (10) in Fig. 4D(b). Since the corners of the polygon = resist pattern are rounded in the return material, the result of the frontal photoresist pattern is not far behind. Referring to _ 4B, a return step 3 () 4 is performed, which includes heating the array of photoresist patterns to form a pattern of m2 per photoresist pattern. The surface of the photoresist pattern is 3〇6/316, and the heating temperature is, for example, m ^ to 140 C, and the time is, for example, about 1 〇 to 15 minutes. When the surface of the photoresist pattern 302/ has a height distribution of (4), the surface of the pattern 316 of 1358126 UMCD-2007-0159 24477twf.doc/p may approach a portion of the spherical surface 307/317. In addition, for the photoresist pattern array of FIG. 4A(a), the photoresist of the outermost annular segment 3〇2c of the four adjacent photoresist patterns 302 flows to a small gap therebetween during reflow. The towel is such that each micro-Wei has a curved surface that is completely filled with its predetermined formation area 60. For each of the photoresist patterns of Fig. 4A(b), the photoresist of the outermost annular segment 312b flows outward during reflow, and the adjacent adjacent photoresist patterns 312 are connected. Referring to FIG. 4C, the shaping step 3〇8 is subsequently performed to remove the solvent remaining in the surface rounded photoresist pattern 306/316, and the shape of each surface rounded photoresist pattern 306/316 is fixed to form a microlens. 3i〇c/ 310d. In the example, the cleaving step is to irradiate the array of photoresist patterns with ultraviolet light using a wavelength of ultraviolet light of, for example, about 365 persons, an intensity of, for example, about 3 (8) mJ/cm 2 , and a treatment time of, for example, about 1 to 15 minutes. In another example, the shaping step 308 includes further heating the array of photoresist patterns at a temperature that is higher than the reflow step 304, e.g., about 180 to 200 〇c, and the processing time is, for example, about 10 to 15 minutes. A top view of an example of a mask pattern in which the photoresist pattern illustrated in Fig. 4A(a)/(b) can be defined is shown in Fig. 5(a)/(b). The reticle comprises a transparent substrate 500/530 and a respective 502/532 corresponding to each of the microlens forming regions 〇 ❹ 光 51 51G/54(), which conforms to the reticle pattern of the microlens array Array. In the example of FIG. 5 (8), each of the mask patterns 51 is substantially a square unit pattern spaced apart from each other, and wherein each of the mask patterns 51 includes exposing a portion of the transparent substrate 500 to define a photoresist pattern. The ring segment of the ring segment 15 1358126 UMCD-2007-0159 24477twf.doc / p is the interval 520 'any two adjacent annular channels 52 〇 for the inner and outer ring relationship = shape stalk 520 includes a complete ring separation The channel 5 and its peripherally incomplete annular channel 520b 'the two ring channels are generally referred to as "ring ring" in the scope of the patent application described in this specification.
另外,相鄰光罩圖案510彼此隔開的距離足夠小,使 得其所^義之相鄰光阻圖案不會斷開。各環狀分隔道52〇 的寬度足夠細,故不會在光阻層巾定義出環麟渠圖案, 而是有使其所對應之部分光阻層的附近區域照光量增加的 效果,因此該附近區域所對應之光阻層會有部分厚度被移 除,從而形成由内而外呈階梯狀下降的多圈環狀片段,如 圖4Α (a)所示者。另外,由於有二分隔道交會在相鄰4光 罩圖案510的中心部位,所以對應此中心部位的光阻會完 全被移除’而使所定義的4光阻圖案之間留有小空隙,如 圖4A(a)所示。In addition, the adjacent mask patterns 510 are spaced apart from each other by a sufficiently small distance that the adjacent photoresist patterns are not broken. The width of each of the annular partitions 52 is sufficiently small, so that the ring-shaped channel pattern is not defined in the photoresist layer, but the effect of increasing the amount of illumination in the vicinity of the portion of the photoresist layer is increased. A portion of the photoresist layer corresponding to the nearby region is removed to form a plurality of annular segments which are stepped down from the inside to the outside, as shown in Fig. 4(a). In addition, since two partitions intersect at the center of the adjacent four mask patterns 510, the photoresist corresponding to the central portion is completely removed', leaving a small gap between the defined four photoresist patterns. As shown in Figure 4A(a).
在圖5(b)之例中,各光罩圖案540為彼此隔開較遠的 圓形圖案,其中每個光罩圖案540包括暴露部分透光基板 530的環狀分隔道550’其皆為完整的環狀分隔道,且其中 任兩相鄰環狀分隔道550為内外圈關係。相鄰光罩圖案540 彼此隔開的距離適中’使其所定義之相鄰光阻圖案必須經 過回溶之後才會相連。環狀分隔道550的效果同前,其可 使所定義之光阻圖案具有由内而外呈階梯狀下降的多圈環 狀片段,如圖4A(b)所示者。 另一方面,可定義出圖4D(a)、4D(b)所示之光阻圖案 的光罩圖案的一例的上視圖繪於圖5(c)、5(d),其等於是 I358126 UMCD-2007-0159 24477twf.doc/p 將前述圓形的環狀分隔道52〇(a/b)、圓形的光罩圖宰 及圓形的環狀分隔道550改成多邊形的環狀、 (含5施,及5施,)、多邊形的光罩圖案_,及 = 狀分隔道550,而得者。另外,標號5〇0,/530,者為透 底,、標號蕭532,者為光罩上對應微鏡預定形成區的ς 區域,標號51〇,者為對應一個微透鏡的方形單位圖案。、 再者,依照顯與/或實驗結果來輕級層In the example of FIG. 5(b), each of the reticle patterns 540 is a circular pattern spaced apart from each other, wherein each of the reticle patterns 540 includes an annular partition 550' exposing a portion of the transparent substrate 530. A complete annular dividing passage, and any two adjacent annular dividing passages 550 are in an inner and outer ring relationship. The adjacent reticle patterns 540 are spaced apart from each other by a moderate distance such that the adjacent photoresist patterns defined must be re-dissolved before they are connected. The annular partition 550 has the same effect as before, and the defined photoresist pattern has a plurality of annular segments which are stepped down from the inside to the outside, as shown in Fig. 4A(b). On the other hand, a top view of an example of a mask pattern in which the photoresist patterns shown in FIGS. 4D(a) and 4D(b) can be defined is shown in FIGS. 5(c) and 5(d), which is equal to I358126 UMCD. -2007-0159 24477twf.doc/p The circular circular dividing passage 52〇(a/b), the circular reticle pattern and the circular annular dividing channel 550 are changed into a polygonal ring shape, ( Contains 5 Shi, and 5 Shi,), a polygonal mask pattern _, and = shaped lane 550, and the winner. Further, the reference numeral 5 〇 0, / 530, which is a through-bottom, and the label 532, is the ς region on the reticle corresponding to the predetermined formation region of the micromirror, and the reference numeral 51 〇 is a square unit pattern corresponding to one microlens. Furthermore, according to the display and / or experimental results, the light layer
吸光度、環狀分隔道的數目/寬度等,即可使—光阻圖I 各盤狀部分的包絡面趨近具有預設曲率半徑的部分球面,、 致使此光阻圖案經回炫步驟而成之微透鏡的表面趨近且有 該預設曲率半徑的該部分球面。 I、/、有 在上述第-f施财,由於每贿透鏡在其與相鄰之 微=相連處以上的各高度具有大致呈圓形料高線 鄰之微透鏡抵接相連處之各高度的等高線輪廊大 致對稱的雜,故其在各歧之截騎彡狀㈣率差 =知的方底圓頂微透鏡’而可達較佳的聚焦效果。另外, *各微透鏡之間沒有空隙時,因為沒有平直部分存在,故 可收集所有光線,以增加光的收集效益。 第二實施例 1 W在f發明第一貫施例中’每個微透鏡都對準其所對應 2二極體,位在微透鏡陣列中間部分的每個微透鏡在各 =向的垂直截面具有大致對稱的形狀,而位在周邊部分的 母個微透鏡則具有不對稱的垂直截面形狀。 切 8126 UMCD-2007-0159 24477twf.doc/p #以CMOS影像記錄裝置為例,圖6是含有本發明第二 ^例之微透鏡陣列的CM〇S影像記縣置的一例的部 =圖。此例之CM〇S影像記錄裝置的結構大致與圖2所 ’除了微透鏡陣列_中各個微透鏡61〇_的 =、位置以外。亦即’微透鏡陣列_亦製作於透光的基 二二思此基層lG包括彩色遽光片陣列12及其他功能層, ;夕b内連線結構20上。多層内連線結構2〇包含第一層 、線22及第一層内連線24,且位於光二極體%的陣列上 方=像記職置的找4G設置於微透鏡陣列_上方一段 距m處。 微透鏡陣列600中間部分的微透鏡㈣在各方向的垂 比^具有大致對稱的形狀,而周邊部分的微透鏡61敵 才直截面形狀°對稱之微透鏡6i〇a的結 ^作方法及對應之光罩圖案已於前文中詳細說明,不 50 對稱之微透鏡61 〇b/C的頂點偏移方向隨入射光 出角而定,以將入射角偏離90。過多的入射光50的 的對庫* ΐΐ出射角度修正回90。左右’而聚焦在其正下方 的人射圖左之不義微透鏡610b 線為向右傾斜,故其頂點偏左;圖右之 點偏右。、鏡610c的入射光相對於法線為向左傾斜,故頂 圖及^ 讀個相連的不對稱微透鏡6iGb的局部等高線 (如#亩1之°〗面圖,不對稱微透鏡610c及周邊其他位向 —、、、氏面方向)上的不對稱微透鏡的結構可依此類推。 18 1358126 UMCD-2007-0159 24477twf.d〇c/p 的C610b在其與相鄰之微透鏡祕 上的各咼度亦具有大致呈圓形的等高線輪 ·ΐϋ之情形,兩相鄰微透鏡610b相連 接近0亦可。 心叼回度 圖8緣示數個可作為微透鏡繼之前 其中每個光阻圖_位於基層二二 微透鏡預物成區6〇 t,包含大致呈圓形的—柱狀部^ =個形且高度低純㈣分602a '夕衣狀片奴602b/c,各環狀片段602b/c的高产不一, = 完整的4片段 圍中皆、、明書及㈣專利範 ^:白„ %狀片段」’而對一個不完整環狀片段敵 告二是指包含其本身在内的一個假想環的中心。 觀視時,上述柱狀部分6〇2a的中心與環狀片 Γ f 皆相對於光阻圖案602所在之區域60的 〜位私。另外,形成包含多邊形柱狀部分及多邊形 環狀二^光阻圖案亦可’此點應不必再藉圖式作說明。 圖9繪示本發明第二實施例中可用以 的,罩圖案。此光罩圖案是與用以定義其他微透 1 的光罩圖案(未繪示)—同形成在透光基板 _ :=位在對應微透鏡6勘之預定形成區⑽的各 個區域902中的多個光罩圖案91〇。 每個光罩圖案910基本上為一方形單位圖案,里中包 括露出部分透絲板_、用以定義出光阻之環狀片段的 19 UMCD-2007^0159 24477twf.doc/p 其包括完整的環狀分隔道9施與其外圍 不疋整崎狀分隔這鶴。另外,彳目 隔_輯足夠小,使得其所定義 罩U彼此 開。此處須特別說明的是,完 環9勘在本說明 而對-個不完整環狀分隔道_而言’ /、中心疋&包含其本身在内的—個假想環的中心。 :92,的寬度夠細而可使光阻圖案具有高度 • _錢_ ’如之前圖5之相關說明所述者。此The absorbance, the number/width of the annular partitions, etc., can make the envelope surface of each disc-shaped portion of the photoresist pattern I approach a partial spherical surface having a predetermined radius of curvature, so that the photoresist pattern is formed by the rejuvenation step. The surface of the microlens approaches and has the partial spherical surface of the predetermined radius of curvature. I, /, have the above-mentioned f-things, because each bristle lens has its height at the abutment connection of the microlens adjacent to the height of the adjacent circular micro-joint The contour line porch is roughly symmetrical, so it can achieve a better focusing effect in the singularity of the singularity (four) rate difference = the known square bottom dome microlens. In addition, * When there is no gap between the microlenses, since there is no flat portion, all the light can be collected to increase the light collection efficiency. Second Embodiment 1 In the first embodiment of the invention, each microlens is aligned with its corresponding two diodes, and each microlens located in the middle portion of the microlens array has a vertical cross section at each direction. The shape has a substantially symmetrical shape, and the parent microlens located at the peripheral portion has an asymmetrical vertical cross-sectional shape. Cut 8126 UMCD-2007-0159 24477twf.doc/p # Taking a CMOS image recording apparatus as an example, Fig. 6 is a partial view of an example of a CM〇S image recording county containing the microlens array of the second example of the present invention. The structure of the CM 〇 S image recording apparatus of this example is substantially the same as that of Fig. 2 except for the position and position of each of the microlenses 61 〇 _ in the microlens array _. That is, the 'microlens array _ is also fabricated on the light-transmitting base layer. The base layer 1G includes a color light-emitting sheet array 12 and other functional layers; The multilayer interconnect structure 2〇 includes a first layer, a line 22, and a first layer interconnect 24, and is located above the array of photodiodes%=4G of the record position is placed above the microlens array_m At the office. The microlens (4) in the middle portion of the microlens array 600 has a substantially symmetrical shape in each direction, and the microlens 61 in the peripheral portion has a straight cross-sectional shape and a symmetric shape of the microlens 6i〇a. The reticle pattern has been described in detail above, and the apex offset direction of the 50-symmetric microlens 61 〇b/C depends on the incident light exit angle to shift the incident angle by 90. The excess incident light 50 has a correction of the bank* ΐΐ exit angle back to 90. The left and right's focus on the person directly below the left unscrewed microlens 610b is tilted to the right, so its vertex is to the left; the right point is to the right. The incident light of the mirror 610c is tilted to the left with respect to the normal line, so the top view and the partial contour line of the connected asymmetric microlens 6iGb (such as the surface of the #1 of 1), the asymmetric microlens 610c and the periphery are read. The structure of the asymmetric microlens on the other positions——, and the direction of the surface—can be deduced by analogy. 18 1358126 UMCD-2007-0159 The C610b of 24477twf.d〇c/p also has a substantially circular contour wheel in the case of its curvature with the adjacent microlens, two adjacent microlenses 610b It is also possible to connect close to 0. Cardiac recurrence Figure 8 shows several rims that can be used as microlenses. Each of the photoresist diagrams is located in the base layer of the second microlens pre-formation zone 6〇t, which contains a substantially circular-column section. Shape and height low purity (four) points 602a 'Eve clothing piece 602b/c, each ring segment 602b/c high yield, = complete 4 segments around the middle, Mingshu and (four) patent Fan ^: white „ The % fragment "" and the enemy of an incomplete ring segment refer to the center of an imaginary ring containing itself. When viewed, the center of the columnar portion 6〇2a and the annular sheet Γf are both private with respect to the region 60 where the photoresist pattern 602 is located. Further, it is also possible to form a polygonal columnar portion and a polygonal ring-shaped photoresist pattern, which should not be illustrated by the drawings. Fig. 9 is a view showing a cover pattern usable in the second embodiment of the present invention. The mask pattern is formed in the respective regions 902 of the transparent substrate _:= position in the predetermined formation region (10) of the corresponding microlens 6 and the mask pattern (not shown) for defining other micro-transmissions 1 A plurality of reticle patterns 91 〇. Each reticle pattern 910 is substantially a square unit pattern including a portion of the permeable plate _, which defines a ring segment of the photoresist. 19 UMCD-2007^0159 24477twf.doc/p includes a complete ring The divider 9 is applied to the crane with its outer periphery not separated. In addition, the size of the mesh is small enough that the defined masks U are open to each other. It should be specifically noted here that the completion of the loop 9 is in the center of this hypothetical ring of the incomplete ring-shaped compartment _, /, center 疋 & itself. : 92, the width is fine enough to make the photoresist pattern have a height • _ money _ ' as described in the related description of Figure 5 above. this
Li欲=包含多邊形柱狀部分及多邊形環狀月段的光 ,則各環_道92_的形狀當須改成多邊形, 此點應不必再以圖式作說明。 在上述第二實施例中,由於中間部分的每個微透鏡在 各方向的垂直截面具有大致對稱的形狀,而位在周邊部分 的平均人射光肖度麟90。過乡料錄透料有不對 的垂直截面形狀,以將平均出射Μ度修正回9()。左右 以每-個微透鏡都可以對準其所對應的光二極體,而不必 位移。因此’位於微透鏡陣列的周邊部分下方的内連 路也不必位移,而可省去設計上的麻煩。 【圖式簡單說明】 圖1A是習知微透鏡陣列的局部等高線圖.,圖m 不出其中-個微透鏡在不同角度截面上的表面高度分佈。、 20 1358126 UMCD-2007-0159 24477twf.doc/p 圖2是習知一種CMOS影像記錄裝置的部分簡圖。 圖3A是本發明第一實施例之一例之微透鏡陣列的局 部等高線圖,圖3B則顯示出其中一個微透鏡在不同角度 截面上的表面高度分佈。 圖3C、3D是本發明第一實施例之另二例之微透鏡 列的局部等高線圖。 圖4A〜4C繪示本發明第一實施例之微透鏡陣列的製 造方法,其中(a)/(b)表示所欲形成之微透鏡完全相連不留 空隙/邊緣恰好相連的例子;目4〇則繪示亦可用以形成相 似之微透鏡的多邊形光阻圖案。 圖5(a)/(b)繪示本發明第一實施例中,可用以定義圖 4A(a)/(b)之光阻圖案的光罩圖案的一例。 圖5(_)緣示本發明第一實施例中,可用以定 4D(a)/(b)之光阻圖案的光罩圖案的一例。 圖6是含有本發明第二實施例之微透鏡陣列的沉 衫像δ己錄裝置的一例的部分簡圖。 圖7 —示本發明第二實施例之微透 繼透鏡料高線圖及對應之剖面圖。代數個非對 所形包明第二實施例之微透鏡陣列製造方法中 =’作為數_對稱微透鏡之前身 的上視圖及剖面圖。 儿I問系 圖9、.·Η 7F本發明第二實施财可帛 圖案的光罩圖案。 心我圆S芡九阻 【主要元件符號說明】 21 1358126 UMCD-2007^0159 24477twf.doc/p 10 :基層 20:多層内連線結構 30 :光二極體 50 :入射光 60 :微遂鏡預定形成區 12 ·彩色遽光片陣列 22、24:第一、二層内連線 40 :目鏡 50a、51 :出射光 100、600 :微透鏡陣列 110、310a/c/d、610a/b/c :微透鏡 302、302’、312、312’、602 :光阻圖案Li wants = light containing a polygonal columnar portion and a polygonal annular segment, and the shape of each ring_channel 92_ needs to be changed to a polygon, and this point should not be illustrated by the figure. In the second embodiment described above, since each of the microlenses of the intermediate portion has a substantially symmetrical shape in a vertical section in each direction, and an average human light in the peripheral portion is 90. There is an incorrect vertical cross-sectional shape in the passbook to correct the average exit twist to 9 (). Left and right, each microlens can be aligned with its corresponding photodiode without displacement. Therefore, the internal wiring located under the peripheral portion of the microlens array does not have to be displaced, and the design trouble can be omitted. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a partial contour diagram of a conventional microlens array. Fig. m shows the surface height distribution of a microlens in different angular sections. 20 1358126 UMCD-2007-0159 24477twf.doc/p FIG. 2 is a partial schematic diagram of a conventional CMOS image recording apparatus. Fig. 3A is a partial contour diagram of a microlens array according to an example of the first embodiment of the present invention, and Fig. 3B shows a surface height distribution of one of the microlenses at different angular sections. 3C and 3D are partial contour diagrams of the microlens array of the other two examples of the first embodiment of the present invention. 4A to 4C illustrate a method of fabricating a microlens array according to a first embodiment of the present invention, wherein (a)/(b) shows an example in which the microlenses to be formed are completely connected without gaps/edges being connected; A polygonal photoresist pattern that can also be used to form similar microlenses is shown. Fig. 5 (a) / (b) shows an example of a mask pattern which can be used to define the photoresist pattern of Fig. 4A (a) / (b) in the first embodiment of the present invention. Fig. 5 (_) shows an example of a mask pattern which can be used to define a photoresist pattern of 4D(a)/(b) in the first embodiment of the present invention. Fig. 6 is a partial schematic view showing an example of a sinker image δ recording apparatus including the microlens array of the second embodiment of the present invention. Fig. 7 is a cross-sectional view showing a microlens of a micro-transparent lens according to a second embodiment of the present invention. The algebraic non-pairs of the microlens array manufacturing method of the second embodiment include a top view and a cross-sectional view of the front body of the number-symmetric microlens. I, I, Fig. 9, Η 7F, the second embodiment of the present invention, the pattern of the reticle pattern.心心圆 S芡九阻 [Main component symbol description] 21 1358126 UMCD-2007^0159 24477twf.doc/p 10 : Base layer 20: Multi-layer interconnect structure 30: Light diode 50: Incident light 60: Micro-mirror is scheduled Forming area 12 · Color enamel arrays 22, 24: first and second layer interconnects 40: eyepieces 50a, 51: outgoing light 100, 600: microlens arrays 110, 310a/c/d, 610a/b/c : microlens 302, 302', 312, 312', 602: photoresist pattern
302a、302a’、312a、312a’、602a :柱狀部分 302b、302b’、312b、312b’、602b :完整的環狀片段 302c、302c’、602c :不完整的環狀片段 304 :回熔步驟 306、316 :表面圓化的光阻圖案 307 ' 317 :球面 308 :定形步驟302a, 302a', 312a, 312a', 602a: cylindrical portion 302b, 302b', 312b, 312b', 602b: complete annular segment 302c, 302c', 602c: incomplete annular segment 304: reflow step 306, 316: surface rounded photoresist pattern 307 '317: spherical surface 308: shaping step
500、500’、530、530’、900 :透光基板 502、502,、532、532’、902 :光罩上區域 510、510’、540、540’、910 :光罩圖案 520、520’、550、550’、920 :環狀分隔道 520a、520a’、920a :完整的環狀分隔道 520b、520b’、920b :不完整的環狀分隔道 22500, 500', 530, 530', 900: transparent substrate 502, 502, 532, 532', 902: upper mask region 510, 510', 540, 540', 910: reticle pattern 520, 520' , 550, 550', 920: annular dividing lanes 520a, 520a', 920a: complete annular dividing lanes 520b, 520b', 920b: incomplete annular dividing lanes 22
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