TWI356962B - Substrate for display device, manufacturing method - Google Patents

Description

1356962 VI. INSTRUCTIONS: The patent application number is included in the whole. This patent claims the priority according to Japanese Patent No. 2004-154506 filed on May 25, 2004. This application is incorporated herein by reference. [Technical Field of the Invention] The present invention relates to a substrate for a display device, a method of manufacturing the same, and a display device. More specifically, the present invention relates to a display substrate suitable for use in a liquid crystal display device or the like, a method of manufacturing the same, and a display device having the same. Ding [Prior Art] At present, liquid crystal display devices are characterized by small size, thin type, low power consumption and high power consumption, and are widely used in active matrix type liquid crystal display devices for various electronic devices, in particular, switching elements as active elements ( The liquid crystal display panel (LCD) is widely used in personal computers, such as A-devices, TVs, etc., because it has the same display characteristics as CRT (Cath〇d Ray Tube). Wait. In the above-mentioned liquid crystal display device, in recent years, progress has been rapidly progressed in quality improvement such as enlargement, high definition, and improvement in pixel effective area ratio (high aperture ratio). Therefore, the substrate for a display device used in a display device such as a liquid crystal display device is also required to further improve the performance of the design surface, the manufacturing technology, and the like. As a substrate for a display device, an active matrix substrate is widely used for a liquid crystal display device or the like. As a manufacturing technique of an active matrix substrate, a technique of forming a pixel electrode and a source line (signal line) on the same plane on a substrate is known. In this technique, if high definition and high aperture ratio are desired, 153051.doc s In order to increase the effective pixel area, the distance between the pixel and the source line is shortened, and the thin line of the source line is thinned. However, if the distance between the pixel and the source line is shortened, short-circuit defects are likely to occur, and if the source line is thinned, the disconnection is likely to occur. In other words, in the manufacturing technique of forming an active matrix in which the pixel electrode and the source line are formed on the same plane on the substrate, there is still room for the occurrence of a short-circuit defect, which causes a decrease in productivity. Therefore, in order to prevent such In the manufacturing method of the active matrix substrate, for example, a manufacturing method of the transmissive liquid crystal display device having the characteristics shown in the following (4) to (4) is proposed (for example, 'refer to Kaiping No. 9_152625 (page (1)). (4) After forming the switching element (active element) and the source wiring (source line), the (transparent) interlayer insulating film is placed. (b) The switching element is made (transparent) The pixel electrode is contacted via the contact hole. 0) The pixel electrode is formed on the interlayer insulating film to separate the source wiring from the pixel electrode by the same plane. The liquid crystal display device is configured such that the active substrate prepared in the above manner is opposed to each other. A color filter substrate is bonded, and liquid crystal is injected between the substrate and the substrate. As the color filter substrate, for example, R (red) and G (green j, B (blue) are used. The color region is set to be a pixel region on the active matrix substrate side, and a black matrix (light shielding film) is provided in a portion other than each pixel region. 153051.doc 1356962 FIG. 13 is a conventional active matrix substrate ( A planar pattern diagram of one of the pixels in the thin film transistor array substrate and a portion of the pixel located adjacent thereto. As shown in FIG. 13, one of the active matrix substrates 13 闸, the gate line (scanning line) 101 And the source line (signal line) 1〇2 are arranged to overlap each other. A thin film transistor (hereinafter referred to as TFT) 114 and a pixel electrode 103 as switching elements are disposed in the 3d-parent portion. The TFTU4 is connected. The gate 104 of the gate line 101, the source 1〇5 connected to the source line 1〇2, the drain 1〇6 connected to the pixel electrode 103, and the island-shaped semiconductor layer 125 are formed, and the pixel is formed. On the electrode 103, a drain electrode 106 is connected via a contact hole 1〇9. Further, the drain electrode 6 is opposed to the storage capacitor line 107 via a gate insulating film 11 to form an auxiliary capacitor. Next, about the active matrix The board, in particular, the manufacturing method of the thin film transistor array substrate, will be briefly described with reference to Figs. 13 to 17. In addition, Fig. 14 is the HH of the thin film transistor array substrate shown in Fig. 13, the direction of the arrow of the line. Figure 15 is a cross-sectional view of the thin-film transistor array substrate shown in Figure 3, and the arrow direction of the line. Figure 16 is a schematic plan view of the external terminal of the gate line. Figure 17 is a schematic outline of the external terminal of the source line. In the manufacture of a thin film transistor array substrate, first, a film is formed on a substrate 11 formed of a transparent substrate such as glass by a film formation, photolithography, and a 5 liter gate (scanning line). 〇1, gate 104, and auxiliary capacitance line 107. Next, a low-resistance semiconductor layer formed of the gate insulating film 111, the active semiconductor layer 12, and the N-type 113, and formed into an island shape 125 by photolithography and etching. 153051.doc The receiver's film source, photolithography and money engraving simultaneously form the source line ι2, the source 105, the gate 1〇6, and the drain electrode (10), and continuously to the low: The resistive semiconductor layer 113 is subjected to source and drain separation etching. In the case where the interlayer insulating film 12 is formed by SiNx or the like, the interlayer insulating film 12 is formed as a front surface, and an organic interlayer insulating film 115 is formed by photolithographic acrylic resin or the like by photolithography, and is formed to have a contact hole. (10) Use the pattern, the pattern of the external electrode terminal contact (Fig. 6^χ), and the outer line of the source line to pull out the pattern of the terminal contact (Y in Fig. 17). Next, in order to form the contact hole 109, the gate external lead terminal 2〇〇, the 'two, the good outer np lead terminal 300, the upper organic interlayer insulating film 11 5 is used as a mask 2 to continuously etch the lower interlayer insulating film 12〇 And gate insulating film (1). Then, the contact hole 109, the gate external lead terminal 2, and the source line external lead terminal 300 are formed to form the pixel electrode 1G3, the uppermost electrode 2〇1 of the gate external lead terminal 200, and the source line. The uppermost layer electrode 301 of the external lead terminal 3〇〇. Further, by the contact holes 1〇9, the drain electrode 106 of the TFTU4 and the pixel electrode 103 are connected to the drain electrode 6 by the drain electrode. According to the above manufacturing method, the source line 102 and the pixel electrode 1〇3 can be separated from each other via the interlayer insulating films 115 and 12 on the active matrix substrate. By the separation of the source line 1〇2 and the pixel electrode 1〇3, not only the capacity loss caused by the short circuit between the pixel electrode 103 and the source line 丨〇2 but also the “overlapping pixels” as shown in FIG. 13 can be prevented. Since the electrode 103 and the source line 1 are 2, the aperture ratio of the liquid crystal display device or the like can be improved. However, in the above-described method for manufacturing a substrate for a display device, when a film defect occurs between the upper organic layer, the underlying insulating film and the gate insulating film are etched by the film defect portion and the upper layer is 153051.doc 1356962 The pixel electrode formed on the organic interlayer insulating film is short-circuited to constitute a display defect, the quality of the display device is lowered, and the productivity is lowered, and thus there is still room for improvement. In the conventional display device substrate, a technique in which the gate insulating layer is a two-layer structure formed of an oxide insulating layer and a gate insulating film of a metal oxide film has been proposed (for example, see Japanese Patent Laid-Open No. Hei No. Hei. page)). However, even if the insulating layer is multilayered by this technique, in the case where the insulating layer which is present in the lower layer than the uppermost layer is etched and removed by using the uppermost interlayer insulating film as a mask, it is impossible to prevent short-circuit defects due to defects of the interlayer insulating film. Effect. In addition, this technique is a countermeasure against a film defect of a gate insulating film. However, it is not a wiring and a pixel electrode existing in a gate line, a source line, or the like in a substrate for a display device in which a pixel electrode is formed on an interlayer insulating film. A countermeasure technique for pixel defects that occur due to leakage due to insulation film defects. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the invention is to provide a substrate for a display device, a method for manufacturing the same, and a display device using the same, which can particularly prevent a pixel when a substrate for a display device having a high aperture ratio is produced. The electrode is short-circuited with the wiring such as the scanning line or the signal line, so that a display device with high display quality can be obtained with high productivity. When the present inventors have conducted various investigations on a substrate for a display device having a high-definition, high aperture ratio, and a display device having high display quality with high productivity, it has been found that in the conventional substrate structure, the scanning line (gate busbar) The wiring of the line), the signal line (source bus line), etc. overlaps the pixel electrode on the plane J5305J.doc 1356962 (from the vertical direction of the substrate surface to the area of the ^^^^) When the film is etched under the (upper layer) interlayer insulating film, the second insulating film is etched with the (upper layer) interlayer insulating film as a mask. Line 'signal line (source bus line), etc.' wiring θ out, straw from the subsequent pixel electrode: cum patterned 'exposed wiring will contact the pixel electrode, resulting in defects. That is, the above-mentioned wiring and the leakage of the pixel electrode

At the time of writing, the pixel potential of the person to be written cannot be maintained, and it becomes a defect in the display device. For this reason, it has been found that, as a protective film for etching, a protective layer is provided on the upper layer of wiring such as a scanning roll or a k-line (source bus bar) to prevent contact between the pixel electrode and the wiring, thereby preventing borrowing These short circuits are caused by leakage defects. For example, it has been found that even if the interlayer insulating film is peeled off by disposing the pattern of the semiconductor layer constituting the switching element in the region of the scanning line and the pixel electrode plane weight, the semiconductor layer pattern becomes a protective film, and there is no need to increase the substrate manufacturing process. It is possible to prevent leakage of the pixel electrode and the scanning line, and to provide a display device such as a liquid crystal display device having a high definition and a high aperture ratio with high productivity, and it is thought that the above problem can be solved very skillfully. In other words, the present invention is a substrate for a display device having a scanning line, a signal line, and a switching element, and further having an interlayer insulating film and a pixel electrode, and the switching element is provided at an intersection of a scanning line and a signal line. a gate connected to the scan line, a source connected to the signal line, and a gate connected to the pixel electrode, wherein the interlayer insulating film has a contact hole for connecting the gate of the switching element to the pixel electrode, and the display Device 153051.doc 1356962 The substrate is a layer provided with a protective layer on the scan line and/or signal line layer. The present invention is also a substrate for a display device having a scanning line, a signal line, a storage capacitor line, and a switching element, and further having an interlayer insulating film and a pixel electrode, and the switching element is provided on the scanning line and the signal line. The intersection portion 'having a gate connected to the scan line' is connected to the source of the signal line and the drain connected to the pixel electrode, and the interlayer insulating film has a contact for connecting the drain of the switching element to the pixel electrode In the hole, the substrate for the display device is provided with a protective layer on the upper layer of at least one of the groups selected from the group consisting of the scanning line, the signal line, and the auxiliary capacitor line. [Embodiment] The substrate for a display device of the present invention has (A) a structure in which a scanning line, a signal line, and a switching element are provided on an insulating substrate, and further includes an interlayer insulating layer and a pixel electrode, or (B) A scanning line 'signal line, a storage capacitor line, and a switching element are provided on the insulating substrate, and a structure of an insulating film and a pixel electrode is further provided. In the structure of the above (A), it is preferable to have a laminated structure of (1) an insulating substrate, (7) a scanning line, a signal line, and a switch member (1) an interlayer insulating film, (4) a pixel electrode, etc., specifically, The signal line and the scan line are disposed on the insulating substrate, and each of the intersection of the signal line and the scan line is provided with a switching element and a pixel electrode. The signal line 'the scanning line and the upper part of the switching element are provided with an interlayer insulating film. The door is provided with a pixel electrode on the film. In the above (B) structure, the order is (1) an insulating substrate, (7) a scanning line, a signal line, an auxiliary power: a wiring and a switching element, (3) an interlayer insulating film, and (4) a pixel electric: a structure is preferable. Continuation 153051.doc 1356962^ The switching element is disposed on the intersection of the scan line and the signal line, has a gate connected to the scan line, is connected to the source of the signal line', and is connected to the pixel electrode Bungee jumping. Further, in general, a gate insulating film is formed between the scanning line (gate), the signal line (source), and the drain. Further, the interlayer insulating film has a contact hole for connecting the drain of the switching element to the pixel electrode.

In the substrate for a display device of the present invention, the above-described structure can drive control of the switching element not only by the current flowing through the scanning line (gate signal) but also in the ON state of the switching element. At the time, the driving control of the pixel electrode is performed by the current (data signal) flowing through the signal line, and the interlayer insulating film prevents the short circuit between the pixel electrode and the signal line. According to the invention, in the structure of the above (A), the scan line and/or the signal line layer are provided with a protective layer, and in the structure of the above (B), the scan line, the signal line, and the auxiliary capacitor line are formed in a group. At least selected - the upper layer of the wiring is provided with a protective layer. That is, in the present invention, at least one of the scanning line, the signal line or the auxiliary capacitance wiring is provided with a protective layer. Therefore, when etching is performed for the contact hole shape of the interlayer insulating film, the protective layer acts as a protective film for etching, and therefore, even if it is an etching mask, A part of the pattern of the interlayer insulating film of the mold has a film defect. In the case of a shortage of defects, it is possible to prevent the wiring of the scanning line or the like after the etching from being exposed. According to this, it can prevent the pixel electrode on the interlayer insulating film from coming into contact with the green ice-seeking wiring such as the scanning line to prevent the short circuit, thereby preventing the occurrence of pixel defects, especially in the fine-grained opening. When the rate is not used for the substrate, it can improve the quality and productivity of the medium-sized bottle _ fork. As the above-mentioned protective layer, if the effect of the wiring of the line 4 is prevented during the etching of the interlayer insulating film, the material and the thickness are not 153051.doc Ϊ 356962 Special Limits & In addition, if the protective layer can protect the lower layer portion at the time of the last name, it may be constructed of the same material as the adjacent other layers, such as the interlayer insulating film and the interlayer film, in this case, in the cross-sectional shape. The protective layer is integrated with other adjacent layers. For example, it is difficult to discriminate the boundary of the layer. The difference between the planar shapes of the other layers adjacent to the protective layer is confirmed, that is, the part of the body (protective layer + The edge-preserving layer can be discriminated by the difference in thickness between the adjacent layers and the un-integrated portion = only the protective layer or only the other layers adjacent thereto. Further, in the present invention, the "protective layer is provided on the upper layer" may mean that the protective layer is placed in contact with a wiring such as a scanning line on the upper layer of the wiring such as a scanning line, or in a scanning line or the like. On the upper layer of the plurality of layers of the wiring, the protective layer is disposed so as not to be in contact with wiring such as a scanning line. For example, a protective layer is provided so as not to be in contact with the scanning line, and a protective layer is provided on the gate insulating film, and a protective layer is provided in the interlayer insulating film. The constituent materials other than the protective layer included in the substrate for a display device of the present invention will be described next. As the insulating substrate, those formed by a transparent insulator such as glass are used. The material of the scanning line, the signal line, and the auxiliary capacitor wiring is not particularly limited as long as the required wiring resistance can be obtained, for example, 1 = (Ta), titanium (Ti), chromium (C〇, aluminum). a metal such as (A1), such a metal gold, or a laminated film of Ti/A丨/Ti formed by laminating the same, etc. Width, thickness 'pattern of the second line, the signal line, and the auxiliary capacitor wiring There is no particular limitation on the shape of the field 153051 .doc •12- 1356962. As a switching element, such as a five-mesh female with a pole, a source and a pole, and ... particularly limited, for example, A _ thin film transistor , J is not... Membrane crystal, microcrystalline shr. 4 矽 bond film transistor, CGs (c〇ntinuous Grain lc〇n, continuous grain boundary crystal 矽) thin film transistor, etc. Material-body forming, source and immersion will be combined with (4) wire as the material of the interlayer insulating film. If there is a material that can obtain the required dielectric constant, wearable ratio, etc., there is no special. The limitation is, for example, =W(SlNx), photosensitive transparent resin, oxidized state = can be used for photosensitive transmission of interlayer insulating film The bright resin may be, for example, a resin such as a resin, an epoxy resin, a polyurethane resin, or a polysulfide resin. The interlayer insulating film may be composed of an old one or two or more layers. The constituents, thickness, and the like are not particularly limited.

The contact hole formed on the interlayer insulating film is not particularly limited in shape, size, number, arrangement, or the like, as long as the electrode of the switching element can be connected to the pixel electrode. In addition, in the contact hole, generally, J = there is a material for electrically connecting the electrode of the switching element to the pixel electrode as a material of the pixel electrode, and the applicable one is Ting (1_Curry side; copper tin oxide), A transparent conductive material such as IZ (Indium Zinc® xide) is used as a substrate for a display device used for a reflective liquid crystal display device or the like, and a metal such as aluminum or silver is also used. The structure of the substrate for a display device of the present invention may be other members as long as it is constituted by the above-described 153051.doc -13 - 1356962 member, and is not particularly limited. The preferred mode of the substrate for a display device of the present invention will be described in detail below. The protective layer is preferably provided under the interlayer insulating film. Therefore, when etching is performed for the formation of contact holes of the interlayer insulating film or the like, the protective layer functions as a protective film for the surname (4), and is simpler than the method of forming the protective layer in the insulating film. A protective layer is formed on the ground. In addition, in the present invention, the "lower layer of the interlayer insulating film" may mean the lower layer of the interlayer insulating film, or may be the lower layer of the plurality of layers. Specifically, the protective layer of the scanning line may be provided on the gate insulating film. Alternatively, the protective layer of the scan line may be provided on the upper layer of one of the scan lines in contact with the scan line. The protective layer is preferably formed by a semiconductor, and is preferably formed of substantially the same composition as the semiconductor layer constituting the switching element. In these cases, since the formation of the protective layer can be simultaneously performed when the semiconductor layer constituting the switching element is formed, it is not necessary to additionally form a protective layer in the manufacturing process of the conventional display device substrate. The substrate for a display device of the present invention is produced to contribute to shortening of the manufacturing process. As the semiconductor, it is preferable to constitute the semiconductor layer of the switching element, and specifically, it is mainly composed of amorphous austenite or the like. In addition, it is preferable that the "substantially the same composition" is evaluated as substantially the same composition, and the formation of the semiconductor layer and the formation of the protective layer which constitute the switching element can be simultaneously performed by a CVD (Chemical Vapor Deposition) method or the like. In the range of I53051.doc • 14· 1356.962, it is preferable that the above protective layer is separated from the semiconductor layer constituting the switching element. In this way, even if it is assumed that the protective layer (semiconductor layer) provided on the scanning line layer and the signal line adjacent to the switching element and connected to the switching element are leaky, the connection can be prevented. Leakage occurs in the pole of the switching element. Therefore, pixel defects can be prevented. In the case where the above-mentioned protection h is formed by nitrogen dicing (siNx), oxygen dicing (10) 2) or resin, in order to form a contact hole for the interlayer insulating film, the protective layer can be sufficiently effectively used. (4) The role of the protective layer 'and' can be easily formed by the protective layer. As the resin, a photosensitive transparent resin is preferred because it is easy to pattern. The photosensitive transparent resin using the protective layer is, for example, an acrylic sulfonium sulfonate, a polyurethane resin, or a polysulfide resin. If a material other than the photosensitive resin is used for the formation of the four layers, the pattern can be applied by photolithography (exposure and display), dry etching, etc. after the liquid photosensitive resin is applied. Chemical. It is preferable that the above-mentioned layer 4 is formed in substantially the same composition as that of the source and/or the gate which constitutes the switching element.扃^ ^ In this case, when the source and the drain of the switching element are formed, the formation of the protective layer can be formed without the need for a protective layer for the manufacturing process of the substrate for the device. In the step, the substrate for display through the present invention of the present invention can be produced, which contributes to shortening the manufacturing process. · In addition, "substantially the same, ., cheng" is evaluated as being substantially the same, and the winner is better, but I can use the #53051.doc that constitutes the source and the drain of the switching element. -15· 1356962 The extent to which the formation and protection layers are formed is sufficient. It is preferable that the protective layer is disposed at least in a portion where the scanning line overlaps the pixel electrode when viewed in a direction perpendicular to the surface of the insulating substrate. Thereby, the scanning line due to etching can be sufficiently prevented from being exposed, and the effect of the present invention for preventing the short circuit between the pixel electrode and the scanning line can be sufficiently exhibited. Further, when the protective layer is viewed in a direction perpendicular to the surface of the insulating substrate, it is preferably disposed only in a portion where the scanning line overlaps the pixel electrode. In this manner, not only the effect of the present invention for preventing the short circuit between the pixel electrode and the scanning line but also the load capacitance of the scanning line can be minimized, for example, the full coverage scan is set as compared with the protective layer. The condition on the line 'is also more able to suppress the increase in the load capacitance of the scan line. In addition, the above-mentioned "when viewed from the surface of the insulating substrate in the vertical direction" means "on the insulating substrate, when the projection of the target person is observed". More specifically, it means "when the point set of the perpendicular to the surface of the insulating substrate is observed from the point of the object to be observed". Therefore, in this case, it means that the orthographic projection of the scanning line on the insulating substrate, the orthographic projection of the protective layer, and the orthographic projection of the pixel electrode overlap. In addition, it is preferable to evaluate the overlap between the scan line and the pixel electrode, and it is preferable to evaluate the overlap between the scan line and the pixel electrode, but the effect of reducing the load capacitance of the scan line is minimized. , can also include the surrounding part. It is preferable that the protective layer is disposed so as to overlap with the scanning line and not overlap with the signal line as viewed in a direction perpendicular to the surface of the insulating substrate. When the protective layer is composed of a semiconductor, it is possible to prevent leakage between the scanning line and the signal; 15305 丨.doc line. The interlayer insulating film is preferably formed of an insulating film of at least two layers, and the edge film of the uppermost reed is an organic film. In the case of the burial, the above-mentioned organic film which constitutes the uppermost layer of the interlayer insulating film can be used as a mask, and it can be etched, and the other layer can be used as a mask on the interlayer insulating film. And the interlayer insulating film is completed. Compared with the case of the order (4), the manufacturing efficiency of the substrate can be improved.

As an organic film, if it is possible to obtain materials such as dielectric ratio, transmittance, k-ratio, etc., the helmet

In other words, it may be selected depending on the etching conditions I, and examples thereof include acrylic acid sulphate, fluorene resin, epoxy resin, polyalkylene resin, and polysulfide resin. - the present invention is also a method of manufacturing a display device of the present invention having a composition substantially the same as that of the semiconductor layer, and the method for manufacturing the substrate for a display device has a protective layer at the same time, and The semiconductor layer constituting the switching element. The invention is further advanced

A method of manufacturing a substrate for a display device of the present invention having a protective layer substantially composed of a source and/or a drain constituting a switching element, and the method for manufacturing the substrate for a display device has a protective layer simultaneously And the source of the switching element and/or the infinite. According to the above, it is possible to manufacture the substrate for a display device of the present invention without adding a protective layer forming step to the conventional manufacturing process of the substrate for a display device, which contributes to shortening the manufacturing process. The present invention is further a method for producing a substrate for display of the present invention having at least two layers of an insulating film and having an uppermost insulating film as a tantalum film. 153051.doc 17 1356962 Method 'and also for the above display The manufacturing method of the substrate for use has a process of forming a contact hole, an external lead terminal of a scanning line, and an external lead terminal of a signal line by using an organic film constituting the uppermost layer of the interlayer insulating film as a mask. Thereby, the manufacturing efficiency of the substrate can be improved as compared with the case where the mask is separately formed on the interlayer insulating film and removed after the last name, and when the entire interlayer insulating film is used as a mask. Further, in the step of forming the contact hole, the external lead-out terminal of the scanning line and the external lead-out terminal of the signal line are collectively formed, and the manufacturing efficiency of the substrate can be improved. Further, the contact hole of the uppermost organic film portion is When the organic film is formed, it is formed in advance. Therefore, in the step of forming the contact hole or the like, a contact hole other than the organic film portion of the uppermost layer is formed by etching. The present invention is a display device for a display device according to the present invention or a display device for a display device produced by the method for producing a substrate for a display device of the present invention. The display device is a controller that can display by displaying an electric signal to a scanning line or a signal line of a substrate for a display device,

f There are no special restrictions. As such a display device, a liquid crystal display device, an organic electroluminescence (EL) display device, or the like can be used, and a liquid crystal display device is also preferable. According to the display device as described above, the short circuit between the pixel electrode and the scanning line can be prevented, and the pixel defect can be effectively prevented. Therefore, the high-definition and high aperture ratio can be obtained, and the good dry quality with less pixel defects can be obtained. Capacity. In the substrate for a display device of the present invention, the pixel electrode is provided on a plane different from the plane on which the signal line and the switching element are formed, and the structure in which the protective layer is provided on the upper layer of the wiring having the scanning line or the like 153051. (Joe -18- 1356962, in the case of preventing the pixel defect occurrence plate caused by the short circuit on the interlayer insulating film, especially in the high-definition, the pixel defect is small and good effect is obtained. Pixel electrode and scanning In the wiring room such as the line, the display device using the above-described display device and the display device having the aperture ratio can be expressed in terms of the quality of the display device, and the present invention will be described in detail. Not limited to these embodiments. (First embodiment)

Description The first embodiment of an embodiment of the present invention will be described below with reference to FIG. In the present embodiment, a specific example of a substrate for a display device is an active matrix substrate for a liquid crystal display device. Fig. 1 is a plan view showing an example of a cross-sectional structure of a liquid crystal display device of the present invention. As shown in Fig. 1, the liquid crystal display device 40 includes an active matrix substrate (substrate for display device) 30, and an opposite substrate 33 having a color filter 34, a light shielding film 35, and the like, and a liquid crystal layer 32 is interposed between the substrates. Further, the liquid crystal layer is sandwiched between an alignment film (not shown) of the counter substrate 33 and an alignment film (not shown) of the active matrix substrate. Figure 2 is a plan view of a pixel matrix of the active matrix substrate of the present invention. 3 is a cross-sectional view taken along the line a_a of the substrate for a display device shown in FIG. 2, and FIG. 4 is an arrow cross-sectional view on the center line of the substrate for a display device shown in FIG. 2. As shown in FIG. 2, in the active matrix substrate 3, a gate line (scanning line), a 153051.doc 19- 1356962 source line (signal line) 2, and a pixel electrode 3 are laminated on an insulating substrate. 〇上. The gate line 1 and the source line 2 are arranged to cross each other. Further, a switching element (TFT) 14 and a pixel electrode 3 are provided at each of the intersections of the intersections. Further, the 'insulating substrate 10 is located at the rearmost side of Fig. 2' and is disposed at the position described in the shave views of Figs. 3 and 4 . Gate line! A gate 4 of a switching element 4 is formed thereon, and a source 5 of the switching element 14 is formed on the source line 2. Further, the pixel electrode 3 is connected to the drain 6 of the switching element 14 via the drain electrode 6. This/and the pole extraction electrode 6' faces the auxiliary capacitance bus line 7 via the gate insulating film π, thereby forming an auxiliary capacitor. As shown in Fig. 4, in the active matrix substrate 30, a protective film (protective layer) 8 is provided on the gate insulating film to cover the surface of the gate line 1. Further, as shown in FIG. 2, the active matrix substrate 30 has a gate line 1, a gate film covering the surface of the gate line 1 when viewed from a vertical direction with respect to the surface of the insulating substrate i, The area where the pixel electrode 3 overlaps, that is, the front projection of the gate line on the surface of the insulating substrate 10, the front projection of the protective film 8 on the surface of the insulating substrate 1 , and the pixel on the surface of the insulating substrate 10 The area where the orthographic projections of the electrodes 3 overlap. Next, the control of the current and voltage in the liquid crystal display device 40 will be briefly described. In the liquid crystal display device 40, such as the gate line! If selected, the voltage applied to the gate 4 will be broken. By the voltage applied to the gate 4, the current flowing between the source 5 and the drain 6 is controlled. Then, according to the k number transmitted from the source line 2, the current flows from the source 5 to the drain electrode 6, and the drain electrode 6 flows through the drain electrode 6 to the pixel electrode 3, thereby causing the pixel electrode 3 to be specified. 153051.doc "Shoulders. The auxiliary capacitor bus bar 7 is provided in an auxiliary manner in order to maintain the designation of the pixel electrode 3. Next, for the example of the present mu active layout substrate-like manufacturing method, use FIG. 2 In the production of the active matrix substrate 3 of the present embodiment, first, a conductive substrate 1 formed of a transparent insulator such as glass is formed by sputtering. a laminated film formed of /A1/Ti, and subjected to photolithography, simultaneously forming a gate line, a gate 4, and an auxiliary circuit line 7 by dry etching and photoresist stripping. Then, on the surfaces, the thickness is about The gate insulating film U formed of the 4? A2SiNx (tantalum nitride) film is a mixed gas of SiH4 gas, NH3 gas, and N2 germanium, and the active semiconductor layer 12 formed of amorphous germanium having a thickness of about 1,500 is used. SiH4 gas and & gas mixture, further thick The N-type low-resistance semiconductor layer 13 doped with about 500 Å is formed by using a mixed gas of SiH 4 gas, PH 3 gas, and krypton gas to form a film by CVD, followed by photolithography, dry etching, and photoresist stripping. Island shape 25. Then, after depositing a laminated film formed by filming Ti/Al/Ti, photolithography and dry etching are applied to simultaneously form source line 2, source 5, drain 6 and drain lead lines. 6'. Further, 'continuously performing source and 汲-polar separation of the n-type low-electrode semiconductor layer J 3 'peeling photoresist. Thus, a thin film transistor (TFT) 14 is formed. Then 'covering the entire surface of the substrate The SiH4 gas, the NH3 gas, and the gas mixture gas are used to form a lower interlayer insulating film 20 from SiNx by a CVD film having a thickness of about 30 A. Then, a mixed gas of SiH4 gas, NH3 gas, and K gas is used. CVD is performed to form SiNx having a thickness of about 4000 A, and a protective film 8 is formed by photolithography processing and dry etching using a mixed gas of CL gas and & gas by J53051.doc -21 - 1356962. Thereafter, by photolithography Forming a photosensitive acrylic resin with a thickness of about 3 μm The upper layer of the interlayer insulating film 15 is formed to have a contact hole 9 and a pattern for the external lead terminal contact of the drain line (the phantom of FIG. 16 and the pattern of the external line of the source line (Fig. 17). Next, in order to form The contact hole 9, the inter-pole external lead terminal 2〇〇, and the source line external lead-out terminal 300 are the above-mentioned organic layer insulation _ a mask 杈 continuous dry etching using a mixed gas of CF4 gas and 〇2 gas, continuous The lower interlayer insulating film 20 and the gate insulating film are etched back. Then, a transparent electrode is formed by sputtering on the entire surface of the substrate including the contact hole 9. Next, the film-formed transparent electrode was patterned by photolithography and wet wire etching, and the photoresist was peeled off to obtain a pixel electrode 3. Further, in the present embodiment, as the material of the gate line 1 and the source line 2, Ti/A1/Ti is used, but there is no particular limitation as long as the desired wire electrode can be obtained. A metal such as a group (Ta), titanium (7), or a chromium (Cr.)' IS (A1), an alloy of these metals, or the like can be used. Further, as the material of the source line 2 of the gate line 1, a film formed by a layer structure such as Ding Wangbiao a/TaN or the like can be used. Further, as the material of the source line 2, a transparent conductive film such as ITQ can be used in addition to the metal film of & jkL· Ηκ v., work, as the switching element 14, an amorphous thin-film electro-optical body is used. However, for example, a microcrystalline lithography film, a polycrystalline film, or a CGS film can also be used. Crystals, etc. In the mode, 'IT 〇 is used as the pixel electrode 3', but I53051.doc -22- 1356962' uses a transparent electrode such as IZ〇. Further, in the case of the reflective liquid crystal display device, the pixel electrode 3 may be, for example, an electrode material which can reflect external light, and may be, for example, a metal such as Ag or Ag. In the present embodiment, as the upper interlayer insulating film 15, a positive-type acrylic-based photosensitive transparent resin is used, but the desired dielectric constant, transmittance, and underlying interlayer insulating film 15 can be obtained. Between the gate insulating film u

The material to be selected is not particularly limited, and for example, a negative-type photosensitive resin, a SiO 2 (yttria) film, or the like can be used. In the present embodiment, as the lower interlayer insulating film 2, a "> film" by the CVD method is used, but a positive photosensitive film or a negative photosensitive photosensitive resin may be used. In addition to the siNx film, a photosensitive transparent resin, a Si 2 film, etc. can be used. The photosensitive transparent resin which can be used for the lower interlayer insulating film 20 and the protective film 8 can be, for example, an acrylic resin epoxy resin. A polyimine resin, a polysulfide resin, etc. Next, a gate defect and a pixel electrode 3 in the case where a film defect occurs in the upper organic layer insulating film 15 in the present embodiment will be described with reference to FIG. Fig. 11 is a plan view showing a state in which the upper interlayer insulating film is peeled off and the pixel electrode and the gate line are leaked at the leakage position 800 in the conventional active matrix substrate. Further, Fig. 12 is shown in Fig. 11. A schematic cross-sectional view of a cross section of the leakage current position 800 along the line G_G. In the conventional active matrix substrate 130, when a film is formed by coating a film on the upper interlayer insulating film 115, a foreign material or the like is wound up. When the upper interlayer insulating film 115 is peeled off (part of the leakage position 800) due to insufficient resultant force, it is known from the above manufacturing process of 153051.doc -23· 1356962 that the lower interlayer insulating film 120 and the gate are located at the position where the upper interlayer insulating film 115 is defective. The electrode insulating film lu is etched. Therefore, as shown in FIG. 12, the pixel electrode 103 is in contact with the gate line 1〇1, and pixel defects occur due to leakage, which causes deterioration in display quality and productivity.

However, in the present invention, the protective film 8' is formed by an insulating material or the like on the gate electrode. Therefore, when the above interlayer insulating film 15 is used as a mask, the gate line 1 can be protected from being surnamed. In the engraving, the protective film 8 remains between the pixel electrode 3 and the interrogation line 1 to exert an effect of suppressing the occurrence of pixel defects. Specifically, in the above process, the interlayer insulating film 15 is used as a mask to etch a lower interlayer insulating film 2A formed of SiNx having a thickness of about 3000 Å and a gate insulating film u formed of SiNx having a thickness of about 4000 Å. It is equivalent to a total thickness of about 7_ kSiNx, but as the protective film 8, it is further thickened by about 4000 A. Therefore, in the portion where the protective film 8 is formed, the film thickness of the SiNx film can be sufficiently ensured (total of about 11 〇〇〇) Into, the contact between the interrogation line 1 and the pixel electrode can be sufficiently suppressed. (Second embodiment) A second embodiment of another embodiment of the present invention will be described below with reference to Figs. 5 to 7 . In addition, members having the same functions as those of the members shown in the drawings related to the first embodiment will be denoted by the same reference numerals, and the description thereof will be omitted. In the second embodiment, the protective layer is formed simultaneously with the semiconductor layer forming the switching element (tft), and is cut away from the semiconductor layer of the switching element, and is configured not to overlap with the source line. The active matrix substrate (display I5305l.doc - 24.1359582, device substrate) of the second embodiment in which the protective layer (hereinafter also referred to as a protective semiconductor layer) is provided will be described with reference to Figs. Further, Fig. 5 is a plan view showing one of the pixels of the active matrix substrate 3 of the present invention. Fig. 6 is a cross-sectional view taken along the line C-C of the substrate for a display device shown in Fig. 5, and Fig. 7 is a cross-sectional view taken along line DD' of the substrate for display device shown in Fig. $.

First, an example of a method of manufacturing the active matrix substrate 3 of the present embodiment will be described. When manufacturing the active matrix substrate 3 of the present embodiment, first, the gate line 闸, the gate 4, and the auxiliary capacitance line are formed in the same process on the substrate 1 formed of a transparent insulating substrate such as glass. 7. Then, on the surface, the gate insulating film 11 formed by SiNx having a thickness of about 4,000 is a mixed gas of SiH4 gas, NH3 gas and A gas, and the amorphous semiconductor layer 12 having a thickness of about 1500 A is formed. Using a mixed gas of SiH4 gas and & gas, a phosphorus-doped low-resistance semiconductor layer 13 having a thickness of about 5 〇〇a is continuously formed by CVD using a mixed gas of SiH4 gas, ΡΗ3 gas, and η2 gas. After the film, photolithography, dry etching, and photoresist peeling are applied to form an island shape 25. At this time, the protective semiconductor layer 26 is simultaneously formed. Next, film formation, photolithography, and dry etching are applied, and a source line 2, a source 5, a drain electrode, and a drain lead line 6 are formed. Further, the n-type low-electrode semiconductor layer 13 is continuously subjected to source-drain separation etching to peel off the photoresist. A thin film transistor (TFT) 14 is formed as such. Then, an interlayer insulating film 20 formed of a SiNx having a thickness of about 3 A is formed by CVD using a mixed gas of SiH 4 gas, Nh 3 gas, and A gas over the entire surface of the substrate. Thereafter, a top layer of the organic layer insulating film 15 is formed from a positive-type photosensitive acrylic film of a melon by photolithography to have a contact hole of 153051.doc •25-1356962, and a pattern of contact terminals of the external terminal of the gate line. (Fig. μ & source line external (10) terminal contact for the case (10) 17) β Next, in order to form the contact hole 9, the interpole line external lead terminal, the thin two-pole terminal lead terminal 3〇〇, is the above organic The layer insulating film 15 is a dry type (four) which uses a mixed gas of CF4 gas and 〇2 gas, and continuously scribes the interlayer insulating film 2〇 and the closed-electrode insulating film 11β, and then covers the entire surface of the substrate including the contact hole 9. The transparent electrode is formed by the axis. Next, the pixel electrode 3 is obtained by patterning the vapor-transparent moon electrode and patterning the photoresist. Next, the effect of the electric leakage of the gate electrode m and the pixel electrode 3 in the case where the upper organic layer is insulated and the film is formed will be described with reference to Fig. 7 . In the film, for example, when the film is applied between the upper layers of the film, when the film is entangled, the film is entangled in the film (4), and the film is peeled off (the leakage position is 800). In the above-described manufacturing process, the terminal insulating film is bonded to the upper interlayer insulating film defect, and the "+1 interlayer insulating film and the gate = broken" (4). Therefore, as shown in Fig. 12, the pixel electrode is in contact with the gate line 101 because leakage causes a decrease in display quality and productivity. The pixel defect 'is thus a layer at. In the invention, 'the protective semiconductor is formed separately on the gate line 1 '. The above interlayer insulating film 15 is used as a mask to name it: special: protect the question line 1 The button is engraved to protect the semiconductor I:·, between: thereby suppressing the occurrence of pixel defects, which is formed by thickening kSiNx; underlying interlayer insulating film 20, and by 153051.doc -26·1356962 • ί « · In the process of forming a gate insulating film of SiNx having a thickness of about 4,000 Å, the etching is equivalent to a total thickness of about 7000 AiSiNx, but the protective semiconductor layer 26 has a thickness of about 1500 Å, and the CF «4 gas and the 〇 2 gas are used. When the mixed gas is used to etch SiNx, the etching selectivity ratio of the SiNx and the protective semiconductor layer 26 is about 1:1, so that the residual film of the gate insulating film can be sufficiently ensured, and the gate line can be sufficiently suppressed. 1 is in contact with the pixel electrode 3.

Further, in the present embodiment, since the protective semiconductor layer 26 is formed simultaneously with the semiconductor layer forming the switching element (TFT) 14, it is advantageous in shortening the process as compared with the first embodiment. Further, in the present embodiment, the protective semiconductor layer 26 is separated from the semiconductor layer forming the switching element, and is configured not to overlap with the source line 2, and therefore, even if it is provided on the gate line (scanning line) 丨The upper protective semiconductor layer 26 and the case where the source line (彳 号 line 2) connected to the switching element 14 adjacent to the switching element 14 is leaked can prevent the connection between the switching element 14 and the switching element 14 Since the electrode 6 is electrically leaky, it is possible to prevent pixel defects. (Third Embodiment) A third embodiment of another embodiment of the present invention will be described below with reference to Figs. In addition, for the convenience of the description, members having the same functions as those of the members shown in the drawings of the first and second embodiments will be denoted by the same reference numerals, and the description thereof will be omitted. According to a third embodiment, in the second embodiment, the protective semiconductor layer is disposed at least in a gate line (scanning line) and a pixel electrode when viewed in a direction perpendicular to the surface of the insulating substrate. Ministry 153051.doc -27- 1356962 points. The active matrix substrate 30 of the third embodiment in which the protective semiconductor layer is provided will be described with reference to Figs. Further, Fig. 8 is a plan view showing a pattern of one of the pixels of the active matrix substrate 30 of the present invention. Fig. 9 is a cross-sectional view taken along line E- Ε of the substrate for a display device shown in Fig. 8. Fig. 1 is an arrow sectional view taken along line F-F1 of the substrate for a display device shown in Fig. 8. First, an example of a method of manufacturing the active matrix substrate 3 of the present embodiment will be described. When manufacturing the active matrix substrate 3 of the present embodiment, first, the gate line 闸, the gate 4, and the auxiliary capacitance line are formed in the same process on the substrate 1 formed of a transparent insulating substrate such as glass. 7. Then, on the surface, the gate insulating film 'i formed by SiNx having a thickness of about 4 Å is an amorphous ruthenium having a thickness of about 1,500 people using a mixed gas of SlH4 gas, NH3 gas and N2 gas. The semiconductor layer 12 is a mixed gas of a mixed gas of SiH4 gas and H2 gas, and is further doped with a thickness of about 5 Å. The patterned low-resistance semiconductor layer U is a mixed gas of SiH4 gas, ΡΗ3 gas, and Η2 gas by CVD. After continuous film formation, photolithography, dry etching, and photoresist peeling are applied to form an island shape 25. At this time, the protective semiconductor layer 26 is simultaneously formed. Then, film formation, photolithography, and dry-type etching are applied to form source line 2, source 5, drain 6 and drain lead line 6. Further, the n-type low-electrode semiconductor layer 丨3 is continuously subjected to source and immersion separation, and the photoresist is peeled off to form a thin film transistor (TFT) 丨4. Then, the interlayer insulating film 20 formed of SiNx having a thickness of about 3000 Å was formed by CVD using a mixed gas of SiH 4 gas, NH 3 gas, and N 2 gas as the entire surface of the substrate. After that, a positive-working type I53051.doc -28·^56962 photosensitive type propylene-resin having a thickness of about 3 μm is formed by photolithography to form an upper insulating film 15 and has a contact hole 9 and an external electrode 5/out terminal. The contact pattern (Fig. 16 and the source line outside 5| the terminal contact pattern (Y!). Next, in order to form the contact hole 9, the interpole line external lead terminal 2, and the source The external lead-out terminal 300 is the dry etching of the above-mentioned organic layer insulating film 15 by using a mixed gas of CF4 gas and 〇2 gas, and the interlayer insulating film 20 and the gate insulating film are successively engraved! Then, the entire surface of the substrate including the contact hole 9 is coated, and the electrode is formed by sputtering. Then, the vapor-transparent electrode is patterned by photolithography and wet etching to peel off the photoresist. Then, the pixel electrode 3 is obtained. Next, an effect of the present embodiment in which the gate electrode 1 and the pixel electrode 3 are not leaked in the state in which the film defect is present in the upper organic layer insulating film 5 will be described with reference to FIG. In the active matrix substrate, such as coating the upper interlayer insulating film When the adhesion between the foreign material and the like is insufficient due to insufficient adhesion, the interlayer insulating film is peeled off. In the above manufacturing process, the lower interlayer insulating film and the gate insulating film are etched at the position of the upper interlayer insulating film defect. Therefore, as shown in FIG. 12, the pixel electrode 1〇3 is in contact with the gate line 1〇1, and pixel defects occur due to leakage, which causes deterioration in display quality and productivity. However, in the present invention, at the gate The protective semiconductor layer 26 is separately formed on the line 1. Therefore, when the above interlayer insulating film 15 is used as a mask, the gate line 1 can be protected from being engraved, and the semiconductor layer 26 is protected at the pixel electrode 3 153051.doc -29-1356962 is effective in suppressing the occurrence of pixel defects. Specifically, the above interlayer insulating film 丨 5 is used as a mask, and etching is formed by SiNx having a thickness of about 3000 Å. In the lower interlayer insulating film 2'' and the gate insulating film 形成 formed by Si and Nx having a thickness of about 4000 A, it is equivalent to etching a total of about 7000 A of SiNx, but the protective semiconductor layer 26 has about 1500. A When the SiNx is etched by a mixed gas of CF4 gas and 〇2 gas, the etching selectivity ratio of the SiNx and the protective semiconductor layer is about 1·10, so that the residual film of the gate insulating film can be sufficiently ensured. In addition, the active matrix substrate (substrate for display device) of the present embodiment is characterized in that the structure of the second embodiment is applied to protect the semiconductor layer 26. When viewed from the surface of the insulating substrate 1A in the vertical direction, at least the gate line (the scanning line}1 and the pixel electrode 3 overlap each other, and the structure of the gate line can be loaded. The increase in capacitance is suppressed to a minimum redness, and the load capacitance of the gate line! is more suppressed than the case where the protective semiconductor layer 26 is disposed to completely cover the gate line. Further, in the above-described first to third embodiments, only the gate layer 8 is provided with the protective layer 8 (protective semiconductor layer 26), but in the present invention, the protective film 4 can also be protected. It is provided on the auxiliary capacitance line 7 to obtain an effect of preventing leakage between the auxiliary capacitance line 7 and the pixel electrode 3. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional schematic view showing an example of a cross-sectional structure of a liquid crystal display device of the present invention (first embodiment). Fig. 2 is a plan view schematically showing one of the pixels of the active matrix substrate (substrate for display device) of the present invention (first embodiment). 153051.doc FIG. 3 is a diagram showing a line on the A-A' line of the display device substrate shown in FIG. 2, and FIG. 4 is a cross-sectional view of the substrate for the display device shown in FIG. The active matrix substrate of the invention (the pixel of one of the substrates for the display device is shown as a plan view (second embodiment). FIG. 6 is a view showing the arrow of the line on the substrate for the display device shown in FIG. FIG. 8 is a schematic plan view showing a pixel of the active matrix substrate (10) of the present invention as a plan view (third embodiment). Fig. 9 is a cross-sectional view taken along the line E-E of the substrate for a display device shown in Fig. 8. Fig. 1 is a cross-sectional view taken along the line F·F of the substrate for a display device shown in Fig. 8 and on the line. Fig. 11 is a schematic view showing a state in which the upper interlayer insulating film is separated and the pixel electrode and the gate line are leaked at the drain position 800 in the conventional active matrix substrate. Q 12 is a cross-sectional schematic view showing a section of the leakage position by the g_g in Fig. 11 and the line cut. Fig. 13 is a plan view showing a portion of a pixel of a conventional active matrix substrate (thin film transistor array substrate) and a portion of a pixel located adjacent to the pixel. 153051.doc • 31 - 1356962 Fig. I4 is a cross-sectional view taken along the line H-H of the substrate for a display device shown in Fig. 13 . Fig. 15 is a cross-sectional view showing the line w of the display device shown in Fig. 13 and the line ±. ^ Figure 16 shows the outside of the gate line of the device substrate. ^Subplanar outline Fig. 17 shows the gate line of the device substrate. . Plane outline of the output terminal \ [Description of main component symbols] 1 Gate line (scanning line) 2 Source line (signal line) 3 Pixel electrode 4 Gate 5 Source 6 No pole 6' Bungee extraction electrode 7 Auxiliary capacitor Line 8 Protective film 9 Contact hole 10 Insulating substrate 11 Gate insulating film 12 Active semiconductor layer 13 Low-resistance semiconductor layer 14 Thin film transistor (switching element)

153051.doc -32* 1356962. 15 Upper interlayer insulating film 20 Lower interlayer insulating film 25 Island-shaped semiconductor layer pattern 26 Protective semiconductor layer 30 Active matrix substrate (substrate for display device) 32 Liquid crystal layer 34 Color filter 35 Light-shielding film

40 Liquid crystal display device 101 Gate line (scanning line) 102 Source line (signal line) 103 Pixel electrode 104 Gate 105 Source 106 Deuterium 106' Deuterium extraction electrode

107 auxiliary capacitor line 109 contact hole 110 substrate 111 gate insulating film 112 active semiconductor layer 113 low-resistance semiconductor layer 114 thin film transistor (switching element) 115 upper organic interlayer insulating film 153051.doc -33- 1356962 120 lower interlayer insulating film 125 Island-shaped semiconductor layer pattern 130 Active matrix substrate (display device substrate) 200 Gate line external lead terminal 201 Gate line external lead terminal uppermost layer electrode 300 Source line external lead terminal 301 Source line external lead terminal Upper electrode 153051.doc -34-

Claims (1)

1356962 . - _______ , I ~ Patent Application No. 099146408 Replacement of Chinese Patent Application (October 100) 1 . |»r〇年丨〇月Θ日修(|1)本本七,申请专ϋ ΗΪΤ ΗΪΤ a substrate for a device, comprising: a scan line, a signal line, a switching element provided on the insulating substrate, an interlayer insulating film, a gate insulating film, and a pixel electrode; wherein the switching element is disposed on the scan line and the signal a switching portion of the line having a gate electrode connected to the scanning line, a source electrode connected to the signal line, and a electrodeless electrode connected to the pixel electrode; the interlayer insulating film having the switching element a contact hole connecting the drain electrode and the pixel electrode; the protective layer is disposed not to have a contact hole above the scan line and/or the signal line; the protective layer is disposed under the interlayer insulating film; One portion of the film under the protective layer is in contact with a portion of the film present on the protective layer; the protective layer is formed of hafnium oxide a substrate for a display device, comprising: a scan line, a signal line, a setting; a germanium edge; a switching element on the substrate; an interlayer insulating film, a gate insulating film, and a pixel electrode; wherein the switch 7L is The switching element has a gate electrode connected to the scan line, a source electrode connected to the k-th line, and a electrodeless electrode connected to the pixel electrode. The interlayer insulating film has a contact hole for connecting the gate electrode of the switching element to the pixel electrode of the 153051-1001017.doc 1356962; the protective layer is disposed to have no contact above the scan line and/or the signal line; a hole; the protective layer is disposed under the interlayer insulating film; a portion of the film existing under the protective layer is partially connected to a portion of the film present on the protective layer; and the interlayer insulating film is At least two layers of an insulating film are formed; the uppermost layer of the insulating film is an organic film. 3. A method of manufacturing a substrate for a display device, which is formed as shown in claim 2 In the method of manufacturing the substrate, the organic film forming the uppermost layer of the interlayer insulating film is etched as a mask, thereby simultaneously forming the contact hole, the external lead terminal of the broom line, and the signal Step of externally drawing out the terminal of the wire. 4. A substrate for a display device, comprising: a scanning line, a signal line, a supplementary capacitor wiring, a switching element provided on an insulating substrate, an interlayer insulating film, and a gate insulating film And a pixel electrode; wherein the switching element is disposed at a portion of the intersection of the scan line and the signal line, and the switching element has a gate electrode connected to the scan line, a source electrode connected to the signal line, and a gate electrode connected to the pixel electrode; the interlayer insulating film has a contact hole for connecting the gate electrode of the switching element to the pixel electrode; and the protective layer is disposed from the scan line, the signal line, and the The top of at least one of the wirings selected by the group of the auxiliary capacitor wiring does not have a 153051-1001017.doc -2 - contact hole; The protective layer is disposed under the interlayer insulating film; and a portion of the germanium existing under the protective layer is in contact with a portion of the film present on the protective layer; the protective layer is cerium oxide form. The display substrate includes: a scan line, a signal line, a supplementary electric wiring, a switching element provided on the insulating substrate, an interlayer insulating film, a gate insulating film, and a pixel electrode; wherein the switching element The switching element has a gate electrode connected to the scan line, a source electrode connected to the 栺 line, and an optional electrode connected to the pixel electrode. The interlayer insulating film has a contact hole for connecting the drain electrode of the switching element to the pixel electrode; and the protective layer is provided in a group formed by the scanning, the line, the signal line, and the auxiliary capacitor wiring Selecting at least one of the wires does not have a contact hole; Μ the protective layer is disposed under the interlayer insulating film; a portion of the film existing under the protective layer and a film present on the protective layer The protective layer includes substantially the same composition as the composition of the source electrode and/or the drain electrode constituting the switching element. 6. A method of manufacturing a substrate for a display device, comprising the substrate for a display device according to claim 5, wherein the manufacturing method comprises: simultaneously forming the protective layer of 153051-1001017.doc 1356962 and the source constituting the switching element; The steps of the electrode and/or the above-mentioned drain electrode. 7. A substrate for a display device comprising: a scanning line, a signal line, a supplemental valley wiring, a switching element provided on an insulating substrate, an interlayer insulating film, a gate insulating film, and a pixel electrode; The switching element is disposed at a portion of the intersection of the scan line and the signal line, and the switching element has a gate electrode connected to the scan line, a source electrode connected to the mark line, and a pixel electrode connected to the pixel electrode a drain electrode; the interlayer insulating film has a contact hole for connecting the gate electrode of the switching element to the pixel electrode; and the protective layer is formed from the scan line, the signal line, and the auxiliary capacitor wiring The at least one of the selected ones of the groups does not have a contact hole; the protective layer is disposed under the interlayer insulating film; a portion of the film existing under the protective layer and the layer present on the protective layer One of the films is in contact with each other; the interlayer insulating film is formed of at least two insulating films; and the uppermost layer of the insulating film is an organic film. A method of manufacturing a substrate for a display device, comprising: forming a substrate for a display device according to claim 7, wherein the organic film forming the uppermost layer of the interlayer insulating film is used as a mask Etching, thereby forming the contact hole, the external lead terminal of the scan line, and the external lead terminal of the signal line. 153051-100ioi7.doc