TWI352260B - Device for generating haze on a photomask - Google Patents
Device for generating haze on a photomask Download PDFInfo
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- TWI352260B TWI352260B TW96145173A TW96145173A TWI352260B TW I352260 B TWI352260 B TW I352260B TW 96145173 A TW96145173 A TW 96145173A TW 96145173 A TW96145173 A TW 96145173A TW I352260 B TWI352260 B TW I352260B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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Abstract
Description
1352260 26442pjf.doc 九、發明說明: 【發明所屬之技術領域】 本發明疋有關於一種在光罩上產生模糊的裝置,並且 特別是有關於這樣一種在光罩上產生模糊的裝置,並中 糊是為找出模糊的產生原因而人為產生於光罩的表面上之 成長缺陷(growth defect)。 【先前技術】 目前,隨著半導體元件的高度積集,發射波長為2〇〇μ 或更短波長的雷射束的光源被用於微影製程。例如,發射 波長為193nm之雷射束的ArF準分子(㈣聰^)雷射器被廣 泛地使用。,然而,當波長為2〇〇nm或更短波長的雷射束昭 射到光罩上時,在光罩的表面上產生成長缺_式的& ,。結果,光罩的效能變差且光罩的壽命也被驗。因此, 為了研究模糊的產生仙以及提供防 求,需要:種在料上人為地產生模_錢。法 一 j 1是繪示在光罩上產生模糊的習知裝置1〇〇,之構造 示意圖。參照圖1 ’模糊產生裝置包括發射波長為 i9^11之準分子雷射束的雷射發射單元1G,;處理雷射束使 /由射束,、有預疋之形狀及能量分佈(如打❽distribution) 的光學系統,以及其中設置光罩1的處理室40,。光學系統 ,括多個鏡m,以及33·,·處理雷射束之形狀的望遠 =34,均勻地處理雷射束之能量的均勻器·以及調節 f射束之焦點和尺寸的聚焦透鏡36'。窗口 4Γ和42,安裝於 处理至40的上部和下部,雷射束通過窗口 4厂和42,。分束 1352260 26442pif.doc 器(beam splitter)501'和51Γ以及能量計5〇2,和512义別設1352260 26442pjf.doc IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a device for generating blur on a reticle, and more particularly to such a device for generating blur on a reticle, and It is a growth defect artificially generated on the surface of the reticle to find out the cause of the ambiguity. [Prior Art] At present, with the high integration of semiconductor elements, a light source that emits a laser beam having a wavelength of 2 〇〇 μ or shorter is used for the lithography process. For example, an ArF excimer ((4) Cong) laser that emits a laser beam having a wavelength of 193 nm is widely used. However, when a laser beam having a wavelength of 2 〇〇 nm or shorter is projected onto the reticle, a growth lag is generated on the surface of the reticle. As a result, the performance of the reticle deteriorates and the life of the reticle is also examined. Therefore, in order to study the fuzzy generation and provide protection, it is necessary to artificially generate the model money. The method of j 1 is a schematic diagram showing a conventional device for generating blur on a reticle. Referring to Fig. 1, the 'blurring generating device includes a laser emitting unit 1G that emits a quasi-molecular laser beam having a wavelength of i9^11; processing the laser beam to make/by the beam, having a shape and energy distribution (such as playing The optical system of ❽distribution), and the processing chamber 40 in which the reticle 1 is disposed. The optical system includes a plurality of mirrors m, and 33·, a telephoto of processing the shape of the laser beam = 34, a homogenizer that uniformly processes the energy of the laser beam, and a focusing lens 36 that adjusts the focus and size of the f beam. '. The windows 4 and 42 are mounted to the upper and lower portions of the 40, and the laser beam passes through the windows 4 and 42. Beam splitting 1352260 26442pif.doc (beam splitter) 501' and 51Γ and energy meter 5〇2, and 512
置於處理室40’的上方和下方,能量計502'和512'量測從分 束器反射之雷射束的能量。電荷耦合元件式 (charge-coupled device)相機49’設置於處理室4〇ι上方並監 測在光罩的表面上是否產生模糊。處理室4〇,還連接到供應 氣體的氣體供應器45'以及控制濕度的濕氣供應單元6〇,。 同樣’照射在光罩上之雷射束的淨能量㈣咖㈣由Placed above and below the processing chamber 40', the energy meters 502' and 512' measure the energy of the laser beam reflected from the beam splitter. A charge-coupled device camera 49' is disposed above the process chamber 4〇 and monitors whether blurring occurs on the surface of the reticle. The processing chamber 4 is also connected to a gas supply 45' for supplying gas and a moisture supply unit 6' for controlling humidity. Similarly the net energy of the laser beam irradiated on the reticle (four) coffee (four) by
能f計502’所量測的雷射束能量以及分束器5〇r的透射率 =,並且在模糊產生之前照射到光罩上之雷射束的累積 J量(cumulated energy)藉由將模糊產生之前照射的雷射 束的每個淨能量相加而成。 累藉μ/Γ ㈣量實例有模糊產生之$ 束能量的大小以及環境條件,制 、'揽又及濕度等。因此,這些變量鹿該由研 所希望地騎㈣。 研九者iThe laser beam energy measured by the 502' and the transmittance of the beam splitter 5〇r =, and the cumulative energy of the laser beam irradiated onto the reticle before the blur generation is generated The blur produces each of the net energy of the previously irradiated laser beam. Excessive μ/Γ (4) The number of instances has the amount of energy generated by the blur and the environmental conditions, system, and humidity. Therefore, these variables deer should be rided by the Institute (4). Research nine
然而,在上述模糊產生裝置中, 生之前將所希望的能錢度之雷 在模糊^ 是,當雷射束與氧反應時,雷射束;^=光罩上。也菊 失由處理室内的蓋以咖m 果的累積此罝,此能量損 存在誤差如丨起’因而雷射相淨能量和累積能量 此外,儘管在產生模糊之前 射束照射到光罩i ^將預疋μ強度的雷 在白知裝置中’從雷射發射單元 1352260 26442pif.doc w發射的雷射束由光學 處理室401沒有調節射理後照射到處理室4〇|内, 當入射到料㈣射束/1=^級崎。結果,即使 度、濕度以:氣體,處理室内的溫 知技術中沒有考慮處理室“這時所由於在習 的淨能量以及累積能量無法精^^定兄2外所,射束 法在模糊產生之前如戶彳f 研九者無 素。 所希王地控制處理室40,中的環境因 :和分束_。料,學】J、窗 ^能量降低。因此,雷射束的淨能量和累射束 且雷射束的能量強度無法“確 糊==以==罩上產生模 射到光罩上,準確地量測累:在 射束此1大小以及控制處理室内的環境因素。 勺雷 裝置, 之能量強度;光學系統’處理雷射束使得 1352260 26442pif.doc ^狀以及能量分佈;處理室,具有安裝於處理室 由透明材質形成的窗口以及形成於處理室中的 束通過此窗口 ’此空間可設置光罩並填充處理 : =卜綠以及衰減器控制單元·,基於入‘ 2束的入射能量強度來㈣衰減器,使得預定 度的雷射束照射到光罩上。 〃亏肖b里強 根據本發明,照射到光罩上的雷射 ==產生之前照射到光罩上的雷射束的累-Ϊ二 同樣,預定能量強度的雷射束可持續地照射 此外,可如所希望地控制處理室内的濕度。 【實施方式】 中’將參照_詳細地描述本發明的實施例。 生桓根據本發㈣—*紐實施例在光罩上產 裝置之構造示意圖。圖3是方塊示意圖,緣示用 過減器的控制 D王 疋方塊不意圖’繪示當圖2所示的在光罩上吝 =裝置内產生模糊時發出警報的報警單 幢制圖2所示的處理室_㈣度 ,照圖2至圖5 ’根據本發明的實施例之在 生_的裝置包括雷射發射單元1Q、衰減器2 ^However, in the above-described blur generating device, the desired thunder of the energy can be blurred before the lifetime, when the laser beam reacts with oxygen, the laser beam; ^ = on the mask. Also, the chrysanthemum is lost by the accumulation of the lid in the processing chamber. This energy loss has errors such as picking up' thus the net energy and cumulative energy of the laser phase. In addition, the beam is irradiated to the mask before the blur is generated. The laser beam emitted from the laser emission unit 1252260 26442pif.doc w is irradiated into the processing chamber 4〇| by the optical processing chamber 401 without being adjusted by the optical processing chamber 401. Material (4) Beam / 1 = ^ level. As a result, even if the degree and humidity are: gas, the processing room is not considered in the processing room. "At this time, because the net energy and the accumulated energy in the study cannot be refined, the beam method is before the blur generation. If the household 彳 f research nine is not good. The king of the control room 40, the environment due to: and split _. Material, learning] J, window ^ energy reduction. Therefore, the net energy and tired of the laser beam The beam and the energy intensity of the laser beam cannot be "improved == === the mask is molded onto the reticle, accurately measuring the tiredness: the size of the beam and the environmental factors in the control chamber. Scouring device, energy intensity; optical system 'processing laser beam to make 1352260 26442pif.doc shape and energy distribution; processing chamber, having a window formed by a transparent material installed in the processing chamber and a beam formed in the processing chamber through this Window 'This space can be set to fill the mask and fill the process: = green and attenuator control unit · based on the intensity of the incident energy into the '2 bundles' (4) attenuator, so that a predetermined degree of laser beam is irradiated onto the reticle. According to the invention, the laser beam impinging on the reticle == the squeezing of the laser beam that was previously irradiated onto the reticle. Similarly, the laser beam of predetermined energy intensity is continuously illuminated. The humidity in the processing chamber can be controlled as desired. [Embodiment] An embodiment of the present invention will be described in detail with reference to. The structure of the production device on the reticle according to the embodiment of the present invention (4)-*. 3 is a block diagram showing the control of the over-subtractor. The D-square block is not intended to 'show the alarm single-frame diagram 2 when the squeegee on the reticle is generated as shown in FIG. The illustrated processing chamber _ (four) degrees, according to FIG. 2 to FIG. 5 'The device according to the embodiment of the present invention includes the laser emitting unit 1Q and the attenuator 2 ^
=5 ^理室4 G、監測單元4 9、能量量測單元5 0和5予 1 以及撫軋供應單元6〇。 ? M 1352260 26442pif.doc 雷射發射單元10產生並發射雷射束。 _ m發射波長為·nm或更短波長的;,例^ 波長為193nm的準分子雷射束。 …衰減器20衰減並控制從雷射發射單元1Ό發射之命 束的能量。藉由調節衰減器20的角度來控制㈣束的^量 強度。 J學ί統30處理雷射束,使得雷射束具有預定的形狀 和月b罝分佈。光學系統30包括第一鏡片31、第二 以及第三鏡片33,各鏡片分別反射f射束;設置於第一鏡 片31和第二鏡片32之間的望遠鏡34以處理雷射束的形 狀,設置於第二鏡片32和第三鏡片33之間的均勻器% 以均勻地處理#射束的能量;設置於均勻器35和第三鏡片 33之間的物鏡(fleld lens) 36 ;設置於物鏡㈣第三鏡片 33之間的罩幕37以防止藉由雷射束的繞射(diffraction)形 成的光束;以及調節雷射束之焦點的投影透鏡㈣ection ㈣38。在本實施例中,能量強度由衰減器20調節的雷射 束入射到光學純3G以進行處理並朝處理室4Q發射。 與外界隔離的空間形成於處理室40内。臺架(未圖示) 安裝於4S室40内,光罩丨則蚊於臺架上。窗口 41和 42分別安裝於處理室4Q的上部和下部。各窗口 41和c 由雷射束可以通過的透明材料(例如玻瑪)形成。因此,由 光學系統3Q處理的雷射束通過上窗口 41後照射到光罩丄 上广同樣’ ^理室4G填充處理氣體,例如,氨氣(NH3)、 氧氣(〇2)、氮_2)、二氧化硫(SQ2)等的混合物。量測處 12 1352260 26442pif.doc 理室内的處理氣體之成分比率的氣體傳感器43以及旦 處理室内^度之紐傳感H 44安裝於處理室4G内病 監測單兀49安裝於處理室40上方。監測單元49於 在光罩1的表面上是否產生模糊。在本實施例中,使= 荷搞式相機作為監測單元49。 电 月罝測單元5〇和51分別安裝於處理室4〇的 下方。此里賣蜊單元5〇包括分束器5〇】和量測從分 5〇1反射之雷射束的能量的能量計5〇2,並且能量量測單 =括=器511以及量測從分束器511反射之 ^ Ϊ 512 °設置於處理室4〇上方的能量計502量 4〇下方的能量計;東的能量’並且設置於處理室 旦 2 5測從下窗口 42發射的雷射東的能 置。 氣供=到處理室4〇的空間内。濕 施加動力時加61以及加熱元件62,在 5扯/!、件產生熱I以加熱水管61。水管61 二63連接到處理室4G。水管61藉由氣體供 6=二辟P到供應惰性氣體(例如,氮氣)的氣體供應器 加教二:體經θ氣體供應管64供應到水管61時,藉由 理室To的二熱里形成的濕氣經濕氣供應管63供應到處 據二匕此外,供應到處理室40的濕氣的量根 水其6114内的惰性氣體的量而改變。也就是,供應到 同i,當施二,越多,供^到處理室4G的满氣就越多。 田σ B守產生熱量的加熱器67安裝於濕氣供應 (S ) 13 26442pif.doc 管63的外表面上。止卜冰丄& 形成於濕氣供應管63的内^1 67的熱量防止露水㈣ 氣管66,並且第1 土 ^;濕乳供應管63連接到排 氣供應管63和排氣管6 °弟二閥門㈤分別安裝到濕 控制器041和第二 '間門 控制惰性氣體之流量的流量 實施例中,綠域舰鮮64上。在本 處理室40連器作為流量控制器641。 理室的内部供應處、^’氣體供應器45向處 ,,氣體供應管:以==到氣二 理室40的另一如、由& 乂牧王』乱奴供應裔45,亚且處 内的氣體。第四閥門4二2官47 ’排氣管47排放處理室 動屢力控制器48安^ 體供應管46上,並且自 控制排氣上,咖力控制器48 声、或哭ln艮疋地維持處理室40内的壓力。 體39义内,殼體%光^^3〇以及上分束請配置於殼 性氣體(例如,氮和流料392。當惰 露於惰性裹妒护# 汉上刀束态5〇ι分別暴 光學系統料⑽騎減器2〇、 不會降低m;l束為501的巧染。因而,雷射束的能量 下分束哭5】=術中是不可能預期的。同樣,由於 流入埤。5U 3於獨立的殼體513内。殼體513上形成 並經流出惰性氣體經流入蜂514引入 的污染。氣’㈣由雷射束料對下分束器5η 、X射态II女裝在上窗口和下窗口 41和42 14 (S > 26442pif.d〇c 附近並分別朝窗口 41和 射束時可防止由於i*42發射惰性氣體,使得當照射雷 此外’根據本;二起f窗口41和42的污染。 括儲存單元7r、-.演算。。_Λ也例的模糊產生裝置100更包 警單元8CN ~""早凡72、衰減器控制單元73以及報 儲存單元71儲存對雇 射束之能量損失率。此時把理氣體的各成分比率的雷 射束與處錢體反錢得束量敎率表示當雷 降低程度的數值。儘的能量降低時雷射束能量 力起,但除了氧氣外的;他量損失大部分是由氧氣 射束的能量損失率可藉體的成分比率而變化。雷 演算單元7= 以經驗方式獲得。 能量損失;二;入射能量強度和雷射束的 度,其中入射能量強度由能=二的淨能量強 損失率從儲存單元71讀 里測而苗射束的能量 失率所表_雷射权=讀取的雷射束之能量損 氣體的成分轉,此成分比對絲處理室内之處理 具體來說,在本實_巾演算,傳严11 43量測’並且 失率。此外,演算單元70 2項取雷射束的能量損 強度。 ㈢么式1演算雷射束的淨能量= 5 ^The chamber 4 G, the monitoring unit 49, the energy measuring units 50 and 5 are 1 and the rolling supply unit 6〇. ? M 1352260 26442pif.doc The laser emitting unit 10 generates and emits a laser beam. _ m emission wavelength is · nm or shorter wavelength; for example, excimer laser beam with a wavelength of 193 nm. The attenuator 20 attenuates and controls the energy of the life beam emitted from the laser emitting unit 1 . The intensity of the beam is controlled by adjusting the angle of the attenuator 20. J Xueyu 30 processes the laser beam so that the laser beam has a predetermined shape and a monthly b罝 distribution. The optical system 30 includes a first lens 31, second and third lenses 33, each of which reflects a f-beam; a telescope 34 disposed between the first lens 31 and the second lens 32 to process the shape of the laser beam, a homogenizer between the second lens 32 and the third lens 33 to uniformly process the energy of the #beam; a fleld lens 36 disposed between the homogenizer 35 and the third lens 33; and disposed on the objective lens (4) A mask 37 between the third lenses 33 prevents a beam formed by diffraction of the laser beam; and a projection lens (4) 438 that adjusts the focus of the laser beam. In the present embodiment, the laser beam whose energy intensity is adjusted by the attenuator 20 is incident on the optically pure 3G for processing and is emitted toward the processing chamber 4Q. A space isolated from the outside is formed in the processing chamber 40. The gantry (not shown) is mounted in the 4S chamber 40, and the hood is mosquitoes on the gantry. The windows 41 and 42 are respectively installed at the upper and lower portions of the processing chamber 4Q. Each of the windows 41 and c is formed of a transparent material (e.g., Boma) through which the laser beam can pass. Therefore, the laser beam processed by the optical system 3Q passes through the upper window 41 and is irradiated onto the reticle. The same processing chamber gas is used to fill the processing gas, for example, ammonia (NH3), oxygen (〇2), and nitrogen. ), a mixture of sulfur dioxide (SQ2), and the like. The measuring unit 12 1352260 26442pif.doc The gas sensor 43 of the processing gas component ratio in the chamber and the processing sensor room 44 in the processing chamber 4G are installed in the processing chamber 4G and are installed above the processing chamber 40. The monitoring unit 49 produces blurring on the surface of the reticle 1. In the present embodiment, the = camera is used as the monitoring unit 49. The electric moon measuring units 5A and 51 are respectively installed below the processing chamber 4''. Here, the selling unit 5 includes a beam splitter 5 〇 and an energy meter 5 〇 2 measuring the energy of the laser beam reflected from the 5 〇 1 , and the energy measurement list = 511 = Measure and measurement The beam splitter 511 reflects 能量 512 ° disposed in the processing chamber 4 的 above the energy meter 502 under the energy meter 4; the east energy 'and is set in the processing chamber den 25 to measure the laser emitted from the lower window 42 East can set. Air supply = into the space of the processing chamber 4 。. When the power is applied by the wet, 61 and the heating element 62 are applied, and at the 5, the heat is generated to heat the water pipe 61. The water pipe 61 26 is connected to the process chamber 4G. The water pipe 61 is supplied by a gas supply 6=2 P to a gas supply for supplying an inert gas (for example, nitrogen). When the body is supplied to the water pipe 61 via the θ gas supply pipe 64, the second heat is formed by the chamber To. The moisture is supplied through the moisture supply pipe 63, and the amount of the inert gas in the amount of water supplied to the process chamber 40 is further changed. That is, the supply to the same i, when the second, the more, the more gas is supplied to the processing chamber 4G. The field 67 heat-generating heater 67 is mounted on the outer surface of the moisture supply (S) 13 26442pif.doc tube 63. The heat generated in the inner portion of the moisture supply pipe 63 prevents the dew (four) air pipe 66, and the first soil; the wet milk supply pipe 63 is connected to the exhaust gas supply pipe 63 and the exhaust pipe 6 ° The second valve (f) is installed in the flow controller of the wet controller 041 and the second 'interval door to control the flow rate of the inert gas, respectively. The unit 40 is connected to the flow rate controller 641. The internal supply of the room, the gas supply 45, the gas supply pipe: another == to the gas room 40, by the & The gas inside. The fourth valve 4 2 2 official 47 'exhaust pipe 47 discharge processing room dynamic force controller 48 amps on the body supply pipe 46, and self-controlled exhaust, coffee controller 48 sound, or crying The pressure within the processing chamber 40 is maintained. Within the body 39, the shell % light ^ ^ 3 〇 and the upper splitting should be placed in the shell gas (for example, nitrogen and flow material 392. When inactive in the inert wrap guard # Han upper knife bundle state 5 〇 ι Storm optical system material (10) ride reducer 2 〇, will not reduce m; l bundle is 501 of the dye. Therefore, the energy of the laser beam splitting under the cry 5] = intraoperative is impossible to expect. Similarly, due to inflow 埤5U 3 is in a separate housing 513. The casing 513 is formed and contaminated by the inflow of inert gas through the inflow bee 514. The gas '(4) is made up of a laser beam to the lower beam splitter 5n, X-ray II In the vicinity of the upper and lower windows 41 and 42 14 (S > 26442pif.d〇c and respectively toward the window 41 and the beam, it is possible to prevent the inert gas from being emitted due to i*42, so that when the illuminating thunder is further 'according to this; f contamination of windows 41 and 42. Storage unit 7r, -. calculus. _ Λ 的 的 的 模糊 模糊 8 8 8 8 8 8 8 8 8 8 8 8 8 早 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Store the energy loss rate of the beam of the hired beam. At this time, the ratio of the laser beam to the ratio of the weight of the component of the gas Shows the value of the degree of reduction of the lightning. The energy of the laser beam is reduced when the energy is reduced, but except for oxygen; most of the loss is caused by the energy loss rate of the oxygen beam, which can be changed by the composition ratio of the body. The calculation unit 7 = obtained empirically. Energy loss; two; the incident energy intensity and the degree of the laser beam, wherein the incident energy intensity is read from the storage unit 71 by the net energy loss rate of energy = two and the seed beam is The energy loss rate table _ laser weight = the energy of the read laser beam of the loss of the component of the gas, this component is more specific than the processing of the wire processing room, in the actual _ towel calculation, pass the strict 11 43 measurement 'And the rate of loss. In addition, the calculation unit 70 2 takes the energy loss intensity of the laser beam. (3) The formula 1 calculates the net energy of the laser beam
丄JJZZOU 26442pif.doc 公式1丄JJZZOU 26442pif.doc Formula 1
,(1M -110β^ι μΊΓ Ε】表二能Ρ 罩1上之雷射束的淨能量強度, 示分束器5〇1的透射率^之f射束的入射能量強度,丁】表 表示演算之雷射束的能量損口 41的透射率’而α 如上文所描述的,、、舍暂no ^ 處理氣體所引起之雷射藉由將處理室4〇内的 炭的淨9忐量降低納入考慮來演算雷射 得以知技術更精確之雷射= 衰減器控制單元 人射能量強度來能,5_則的雷射束的 制單元73基於演算的^。在本貫施例中,衰減器控 2〇。也就是,衰減器控制田單射能量強度來控制衰減器 預定的參考能錢度⑹ 射权我量強度與 使得雷射束的淨能量強度變得二的角度’ :罩t生=之前將具有參考能量強㈣雷=二 亢卓1上。冋樣,可以在 不…、射到 光罩!上之雷射束的累魏量產生之4確地1測照射到 的時===束的發射能量強度在模糊產生 _ if束的發射能量強度㈣4 報4讀包括記憶㈣、確定器幻 16 1352260 26442pif.doc 警器83。 時:===處理條件的參考值。此 度以及照射到光罩j上之二成分比率和濕 且參考值表示在各種處理二=能量強度來確定,並 糊時之雷射束的發射能量強度。處^ 上產生模 驗來^並且參考值_理條件而==值藉由實 濕度以Si束H處^ _處理她铽分比率和 處理室之處理條件的參考值,並且確 對應於 =值相同時的時間作為模糊產 模糊產生於光罩^表面上時 二間也就疋,當, (1M -110β^ι μΊΓ Ε) Table 2 can Ρ the net energy intensity of the laser beam on the cover 1, showing the transmittance of the beam splitter 5〇1, the incident energy intensity of the f beam, Calculating the transmittance of the energy loss 41 of the laser beam of the laser beam and α as described above, the laser caused by the processing gas is used to reduce the amount of carbon in the processing chamber 4 Reduce the lasers that are considered to be more accurate in the calculation of the laser; the attenuation energy of the attenuator control unit can be used, and the unit 73 of the laser beam of the 5th is based on the calculation ^. In the present embodiment, The attenuator controls 2〇. That is, the attenuator controls the field single-shot energy intensity to control the attenuator's predetermined reference energy (6). The weight of the shot is the angle between the intensity of the laser beam and the net energy intensity of the laser beam. t raw = before will have a strong reference energy (four) thunder = two 亢 卓 1 on the 冋 冋 , 冋 冋 冋 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Time === The intensity of the transmitted energy of the beam is generated in the blur_the intensity of the emitted energy of the if beam (4) 4 reported 4 readings including memory (4), determine the illusion 1 6 1352260 26442pif.doc Police 83. Time: === reference value of the processing condition. This degree and the ratio of the two components irradiated to the mask j and the wetness and the reference value are determined in various treatments 2 = energy intensity, and The intensity of the emitted energy of the laser beam at the time of paste. The model is generated on ^ and the reference value is _ rational condition == value by the actual humidity at the Si beam H ^ _ processing her split ratio and processing chamber processing The reference value of the condition, and indeed corresponds to the time when the = value is the same as the fuzzy production blur generated on the surface of the reticle ^ when the two are 疋, when
發射的f__能錢度㈣=下窗口 U 揚聲生時警告研究者。二施例中, 警器83。確定器82在模糊產生時向揚 4°。輸出㈣信號,使得揚聲歸出聲音。 元90根據本纽_模糊產生裝置1⑻更包括濕度控制單 、濕度控制單元90基於處理室4〇内的濕度 ^濕度維持在賊时相度。濕度控解包括 .=631、第二闕門661以及第三閱門, 92〇 以及控制流量控制器641的流量控制器控制單元 當濕度傳感器44所量測的濕度等於或小於預定的參The f__ can be emitted (4) = the lower window U The warning is given to the researcher. In the second example, the police 83. The determiner 82 is raised by 4° when the blur is generated. The (four) signal is output so that the sound is returned to the sound. The element 90 further includes a humidity control unit according to the present invention, and the humidity control unit 90 maintains the phase of the thief based on the humidity in the processing chamber 4 (humidity). The humidity control solution includes .=631, the second door 661, and the third door, 92〇, and the flow controller control unit that controls the flow controller 641. The humidity measured by the humidity sensor 44 is equal to or less than a predetermined parameter.
17 1352260 26442pif.doc 考濕度時,閥門控制單元91控制第一和第二闕門63ι和 661分別打開和關閉,使得濕氣供應到處理室4〇的空間 此外,當濕度傳感器44所量測的濕度超過預定參考濕 又闕門控制單元91控制第一和第二間門631和.661分別 關閉和㈣,使得水管61 _濕氣經減f %排出,以 防止心供應到處理室4〇内的空間。此外,當模糊產生裝 置100操作8守,閥門控制單元91控制第三闕門⑷一直手) 開’使得惰性氣體供應_氣供應單元的水管61。 π時ΐ模=生裝置1GG操作之前,第三閥門642打開, t體經排氣管66排出,以藉此移除形成於濕氣供庫= 的水。因而,固定量的濕氣供應到處 以維持期望的濕度。 』处段至40, =流量控㈣控解元92可以增加或減少供 =至的濕氣。流量控制器控制單元92基於由、、以值 =二所量_濕度來控制流量控制器641,以‘2 濕度能夠在短期内與參考濕度相同。 的 ,在本實施辦,考慮由處理氣體所 射束的能量損失來演算雷射束的淨芯所 糊產生之前照射到光罩上之雷射束的累積能量, 技術中不可能預期的。 Μ 、 这疋白知 1352260 26442pif.doc 此外不像習知技術,由於調節奢 模糊產生之前將參考能量_ 角度’可f 罩。 射束持績地照射到光 度:度所希望地控制_ 化。同樣’安裝在濕氣供應管外側的加可以被农: 氣供應管的内部上的露水引入到處理室内方止形成於濕 理室的空間内的濕度。 j々理至内,以精確控制處 此外,由於光學系統、窗口、 σ、 ,性氣體環境,防止雷射束污染==及ί束器暴露 束器以,小化雷射束的能量損耗。H由口以及分 制單=分例:它單:和濕度控 淨能量強度,並且控制声读。。你r到先罩上之雷射束的 考能量強度相同,但還二二度與參 及處理室内的處理氣體的其他;;巧損失以 演算單元72a來確定淨能量強度f使件由如圖6所示的 —般來說,雷射束的能哥二 處理氣體在内的環境條件,例如^^因素引起,包括 以及長時間使用所引起的至内的溫度和濕度, 僅考慮由處理氣體所變化。因而,當 罩上之雷射束的淨能量失時’照射到光 …忐旱確1測。因而,在本實施例 19 Ι3!)2Ζ〇υ 26442pif.doc 中,更包括校正單元75,使得可 校正,處理室4。内的環境條件所引起田的二發射能量來 控制衰減3 崎祕件喊 、H =亚藉此 =的溫度和濕度,此-束的發 内的處理室内處理氣體的成分比率在17 1352260 26442pif.doc When the humidity is measured, the valve control unit 91 controls the first and second tips 63 and 661 to open and close, respectively, so that moisture is supplied to the space of the processing chamber 4, in addition, when the humidity sensor 44 measures The humidity exceeds the predetermined reference wet and the door control unit 91 controls the first and second doors 631 and .661 to be closed and (4), respectively, so that the water pipe 61_moist gas is discharged by minus f% to prevent the heart from being supplied into the processing chamber 4 Space. Further, when the blur generating device 100 is operated, the valve control unit 91 controls the third door (4) to open the door so that the inert gas supplies the water pipe 61 of the gas supply unit. Before π ΐ = = raw device 1 GG operation, the third valve 642 is opened, and the t body is discharged through the exhaust pipe 66 to thereby remove water formed in the moisture supply. Thus, a fixed amount of moisture is supplied throughout to maintain the desired humidity. From the section to 40, = flow control (four) control element 92 can increase or decrease the moisture supply to =. The flow controller control unit 92 controls the flow controller 641 based on , by value = two quantities _ humidity, so that the '2 humidity can be the same as the reference humidity in a short period of time. In this implementation, it is not possible to predict the cumulative energy of the laser beam that is irradiated onto the reticle prior to the generation of the net beam of the laser beam by the energy loss of the beam of the processing gas. Μ 疋 疋 352 352 1352260 26442pif.doc In addition to the conventional technology, the reference energy _ angle can be masked before the extravagant ambiguity is generated. The beam is irradiated to the luminosity: the degree is desirably controlled. Similarly, the addition of the outside of the moisture supply pipe can be introduced into the treatment chamber by the dew on the inside of the gas supply pipe to the humidity formed in the space of the wetroom. j 至 至 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , H by mouth and distribution list = sub-example: it single: and humidity control net energy intensity, and control sound reading. . The energy intensity of the laser beam from the r to the first cover is the same, but also the other two or two degrees of the processing gas involved in the processing chamber; the loss is determined by the calculation unit 72a to determine the net energy intensity f. In general, the environmental conditions of the laser beam, such as ^^ factors, including the temperature and humidity caused by long-term use, are only considered by the processing gas. Changed. Thus, when the net energy of the laser beam on the cover is lost, the light is irradiated to the light. Thus, in the present embodiment 19 Ι 3!) 2 Ζ〇υ 26442 pif. doc, the correction unit 75 is further included so that the processing chamber 4 can be corrected. The environmental conditions within the field cause the second emission energy of the field to control the attenuation and the temperature and humidity of the H, and the composition ratio of the processing gas in the processing chamber of the beam is
:=?射束的發射能量強度等於或小於默“雜 \权早兀75輸出校正信號到演算單元72a。接收^ 异二元瓜校正從儲Ϊ單元71讀取之雷射束的能 里貝τ列如’基於發射能量和標準值之間的差值,設 定與每個差值對應的比例常數,並且用此比例常數乘以讀 取之田射束失率,以校正讀取之雷射束的能量損 ,率。此時於雷射束的人射能量和雷射束能量的降低 量之間的差值設定標準值,f射束能量的降低由處理室内 的處理氣則起’並-般設定在小於此差值的範圍内。:= The intensity of the emitted energy of the beam is equal to or less than the default value of the output signal 72a. The receiving binary is corrected for the energy of the laser beam read from the storage unit 71. The τ column such as 'based on the difference between the emitted energy and the standard value, sets a proportional constant corresponding to each difference, and multiplies the proportional beam constant by the read field beam loss rate to correct the read laser The energy loss and rate of the beam. At this time, the difference between the amount of laser energy of the laser beam and the amount of laser beam energy is set, and the decrease of the energy of the f beam is caused by the processing gas in the processing chamber. Generally set within a range less than this difference.
如上文所描述的,當量測之雷射束的發射能量強度等 於或小於標準值時,校正信號輸出到演算單元72a,並且 >臾异單元72a補償讀取之雷射束的能量損失率,以基於補 償的能量損失率和雷射束的入射能量強度來演算照射到光 罩1上之雷射束的淨能量強度。同時,當量測之雷射束的 發射能量強度超過標準值時,不輸出校正信號,並且演算 單元72a基於讀取之雷射朿的能量損失率以及雷射束的入 射能量強度來演算照射到光罩1上之雷射束的淨能量強 20 ⑶2260 26442pif.doc 又、,卜在’幾异早元72a的演算過程中,採用公式1。 在公式1中,當發射能量強度等於或小於標準值時,〇 示校正之雷射束的能量敎率,並衫發概量強 ^ ^示準表示讀取之雷射束的能量損失率。&〜 演异^雷射束的淨能量強度輸入衰減器控制 亚且农減器控制單元73a控制衰減器2〇,使首 之Μ射朿的淨能量變得與參考能量強度相同。一 ;4a £ ^ 減少來演算雷射>的溪处曰2 田耵米的月 轉妓控制錢較得演算的 獲得照射到知技術相比能更準確地 射到光罩上之雷射束的累=能量以及模糊產生之前照 儘管已經參照特定實施例二 ==項技,理解專= 細節上的ί種it日㈣料和範_情訂進行形式和 【圖式簡單說明】 示意Ξ!疋繪不在光罩上產生模糊的習知裝置·之構造 圖2是繪示根據本發明 _ 生模糊的裝置之構造。、_性實施例在光罩上產 圖3是方塊示意圖,纷示用於在圖2所示的在光罩上 1352260 26442pif.doc 產生模糊的裝置内之衰減器的控制過程。 圖4是方塊示意圖,繪示當圖2所示的在光罩上產生 •- 模糊的裝置内產生模糊時發出警報的報警單元。 ......圖5·是方塊示意圖,繪示控制圖2所示的處理室内的 濕度之濕度控制單元。 圖6是方塊示意圖,繪示根據本發明的另一實施例的 衰減器控制單元的控制過程。 【主要元件符號說明】 • 1 :光罩 10':雷射發射單元 10(V :在光罩上產生模糊的裝置 3Γ :鏡片 32':鏡片 33':鏡片 34':望遠鏡 35’ :均勻器 36':聚焦透鏡 ^ 40':處理室 4Γ :窗口 42丨:窗口 451 :氣體供應器 49':電荷耦合元件式相機 50Γ :分束器 502、分束器 51Γ :能量計 22 1352260 26442pif.doc 512':能量計 60':濕氣供應單元 、 10:雷射發射單元 .......100 :在光罩上產生模糊的裝置 11 :氣體發射器 20 :衰減器 3 0 :光學糸統 31 :第一鏡片 φ 32 :第二鏡片 33 :第三鏡片 34 :望遠鏡 35 :均勻器 36 :物鏡 37 :罩幕 38 :投影透鏡 39 :殼體 391 :流入埠 鲁 392:流出埠 40 :處理室 41 :窗口 42 :窗口 . 43:氣體傳感器 44 :濕度傳感器 45 :氣體供應器 46 :氣體供應管 23 1352260 26442pif.doc 461 :第四閥門 47 :排氣管 -- 48 :自動壓力控制器 _ 49 :監測單元. 50 :能量量測單元 501 :分束器 502 :能量計 51 :能量量測單元 • 511 :分束器 512 :能量計 513 :殼體 514 :流入埠 515 :流出埠 60 :濕氣供應單元 61 :水管 62 :加熱元件 63 :濕氣供應管 • 631 :第一閥門 64 :氣體供應管 641 :流量控制器 642 :第三閥門 . 65:氣體供應器 66:排氣管 661 :第二閥門 67 :加熱器 1352260 26442pif.doc 71 :儲存單元 72 :演算單元 -- 72a:演算單元 ' 73 :衰減器控制單元.' 73a :衰減器控制單元 75 :校正單元 80 :報警單元 81 :記憶體 • 82:確定器 83 :報警器 90 :濕度控制單元 91 :閥門控制單元 92 :流量控制器控制單元 25As described above, when the emission energy intensity of the equivalent measured laser beam is equal to or smaller than the standard value, the correction signal is output to the calculation unit 72a, and > the different unit 72a compensates the energy loss rate of the read laser beam. The net energy intensity of the laser beam irradiated onto the reticle 1 is calculated based on the compensated energy loss rate and the incident energy intensity of the laser beam. Meanwhile, when the emission energy intensity of the equivalent measured laser beam exceeds the standard value, the correction signal is not output, and the calculation unit 72a calculates the illumination based on the energy loss rate of the read laser beam and the incident energy intensity of the laser beam. The net energy of the laser beam on the mask 1 is 20 (3) 2260 26442pif.doc Again, in the calculation process of 'several different early 72a, formula 1 is used. In Equation 1, when the transmitted energy intensity is equal to or less than the standard value, the energy enthalpy of the corrected laser beam is indicated, and the chirp is estimated to indicate the energy loss rate of the read laser beam. &~ The net energy intensity input attenuator control of the derivation beam is controlled by the sub-attenuator control unit 73a to control the attenuator 2〇 so that the net energy of the first pupil is the same as the reference energy intensity. One; 4a £ ^ Reduced to calculate the laser's brook 2 耵 耵 的 的 的 妓 妓 耵 耵 耵 耵 耵 耵 耵 耵 耵 耵 耵 耵 耵 耵 耵 耵 耵 耵 耵 耵 耵 妓 妓 妓 妓 妓 妓 妓 妓 妓 妓 妓 妓 妓 妓 妓 妓 妓The tiredness = energy and the fuzzy generation before the photo has been referred to the specific embodiment 2 == item technique, the understanding of the specific = details of the it day (four) material and the form of the form and the simple description of the figure Ξ! A structure for drawing a conventional device that does not blur on a reticle. Fig. 2 is a view showing the configuration of a device for blurring according to the present invention. Figure 3 is a block diagram showing the control process for the attenuator in the apparatus for generating blur on the reticle 1352260 26442pif.doc shown in Figure 2. Fig. 4 is a block diagram showing an alarm unit that issues an alarm when blurring occurs in a device that produces a blur in the reticle shown in Fig. 2. Fig. 5 is a block diagram showing the humidity control unit for controlling the humidity in the processing chamber shown in Fig. 2. Figure 6 is a block diagram showing the control process of the attenuator control unit in accordance with another embodiment of the present invention. [Main component symbol description] • 1 : Photomask 10': Laser emitting unit 10 (V: Device for blurring on the mask 3: Lens 32': Lens 33': Lens 34': Telescope 35': Uniform 36': Focusing lens ^ 40': Processing chamber 4Γ: Window 42丨: Window 451: Gas supply 49': Charge coupled component camera 50Γ: Beam splitter 502, Beam splitter 51Γ: Energy meter 22 1352260 26442pif.doc 512': Energy meter 60': moisture supply unit, 10: laser emission unit....100: device for generating blur on the reticle 11: gas emitter 20: attenuator 3 0: optical 糸31: first lens φ 32 : second lens 33 : third lens 34 : telescope 35 : homogenizer 36 : objective lens 37 : mask 38 : projection lens 39 : housing 391 : inflow 埠 392 : outflow 埠 40 : Processing chamber 41: window 42: window. 43: gas sensor 44: humidity sensor 45: gas supply 46: gas supply tube 23 1352260 26442pif.doc 461: fourth valve 47: exhaust pipe - 48: automatic pressure controller _ 49 : monitoring unit. 50 : energy measuring unit 501 : beam splitter 502 : energy meter 51 : energy measuring unit • 511 : splitting 512: Energy meter 513: Housing 514: Inflow 埠 515: Outflow 埠 60: Moisture supply unit 61: Water pipe 62: Heating element 63: Moisture supply pipe • 631: First valve 64: Gas supply pipe 641: Flow rate Controller 642: third valve. 65: gas supply 66: exhaust pipe 661: second valve 67: heater 1352260 26442pif.doc 71: storage unit 72: calculation unit - 72a: calculation unit '73: attenuator Control unit. '73a: attenuator control unit 75: correction unit 80: alarm unit 81: memory • 82: determiner 83: alarm 90: humidity control unit 91: valve control unit 92: flow controller control unit 25
Claims (1)
Applications Claiming Priority (1)
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KR1020060129253A KR100793085B1 (en) | 2006-12-18 | 2006-12-18 | Haze Generator of Photo Mask |
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TW200832052A TW200832052A (en) | 2008-08-01 |
TWI352260B true TWI352260B (en) | 2011-11-11 |
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TW96145173A TWI352260B (en) | 2006-12-18 | 2007-11-28 | Device for generating haze on a photomask |
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KR (1) | KR100793085B1 (en) |
TW (1) | TWI352260B (en) |
WO (1) | WO2008075841A1 (en) |
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KR20100042924A (en) | 2008-10-17 | 2010-04-27 | 삼성전자주식회사 | System for monitoring hazes of photomask and method for monitoring thereof |
JP6767257B2 (en) * | 2016-12-22 | 2020-10-14 | 東京エレクトロン株式会社 | Substrate processing equipment and substrate processing method |
US10983430B2 (en) * | 2018-02-22 | 2021-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mask assembly and haze acceleration method |
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JPS63143830A (en) | 1986-12-08 | 1988-06-16 | Hitachi Electronics Eng Co Ltd | Haze-defect detecting method |
JP2657860B2 (en) * | 1991-08-12 | 1997-09-30 | 日立電子エンジニアリング株式会社 | 3D map display method for wafer foreign matter |
KR100299375B1 (en) * | 1998-04-17 | 2001-10-19 | 박종섭 | Method for monitoring surface characteristic of thin film on semiconductor device |
KR20040107950A (en) * | 2003-06-16 | 2004-12-23 | 삼성전자주식회사 | Method for measuring wafer warpage |
KR100719941B1 (en) * | 2004-12-22 | 2007-05-18 | 주식회사 피케이엘 | Device for measuring haze of photomask surface and its measuring method |
KR100572509B1 (en) * | 2005-12-14 | 2006-04-24 | 나노전광 주식회사 | Haze detection device on photomask surface and its detection method |
-
2006
- 2006-12-18 KR KR1020060129253A patent/KR100793085B1/en active IP Right Grant
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2007
- 2007-11-28 TW TW96145173A patent/TWI352260B/en not_active IP Right Cessation
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WO2008075841A1 (en) | 2008-06-26 |
TW200832052A (en) | 2008-08-01 |
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