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TWI346393B - A method for forming a p-n junction photodiode and an apparatus for the same - Google Patents

A method for forming a p-n junction photodiode and an apparatus for the same

Info

Publication number
TWI346393B
TWI346393B TW096124547A TW96124547A TWI346393B TW I346393 B TWI346393 B TW I346393B TW 096124547 A TW096124547 A TW 096124547A TW 96124547 A TW96124547 A TW 96124547A TW I346393 B TWI346393 B TW I346393B
Authority
TW
Taiwan
Prior art keywords
forming
same
junction photodiode
photodiode
junction
Prior art date
Application number
TW096124547A
Other languages
Chinese (zh)
Other versions
TW200903826A (en
Inventor
Chee Wee Liu
Chun Hung Lai
meng kun Chen
Wei Shuo Ho
Original Assignee
Univ Nat Taiwan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Taiwan filed Critical Univ Nat Taiwan
Priority to TW096124547A priority Critical patent/TWI346393B/en
Priority to US11/875,287 priority patent/US7579668B2/en
Publication of TW200903826A publication Critical patent/TW200903826A/en
Application granted granted Critical
Publication of TWI346393B publication Critical patent/TWI346393B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
TW096124547A 2007-07-05 2007-07-05 A method for forming a p-n junction photodiode and an apparatus for the same TWI346393B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW096124547A TWI346393B (en) 2007-07-05 2007-07-05 A method for forming a p-n junction photodiode and an apparatus for the same
US11/875,287 US7579668B2 (en) 2007-07-05 2007-10-19 Method for photo-detecting and apparatus for the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096124547A TWI346393B (en) 2007-07-05 2007-07-05 A method for forming a p-n junction photodiode and an apparatus for the same

Publications (2)

Publication Number Publication Date
TW200903826A TW200903826A (en) 2009-01-16
TWI346393B true TWI346393B (en) 2011-08-01

Family

ID=40220779

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096124547A TWI346393B (en) 2007-07-05 2007-07-05 A method for forming a p-n junction photodiode and an apparatus for the same

Country Status (2)

Country Link
US (1) US7579668B2 (en)
TW (1) TWI346393B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10415513B2 (en) * 2015-05-26 2019-09-17 Tenneco Gmbh EGR system with particle filter and wastegate

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3863334A (en) * 1971-03-08 1975-02-04 Motorola Inc Aluminum-zinc metallization
JPS5378788A (en) * 1976-12-23 1978-07-12 Hitachi Ltd Temperature-compensation-type constant voltage element
DE3706278A1 (en) * 1986-02-28 1987-09-03 Canon Kk SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
US5412229A (en) * 1990-08-31 1995-05-02 Sumitomo Electric Industries, Ltd. Semiconductor light detecting device making use of a photodiode chip
DE19714054A1 (en) * 1997-04-05 1998-10-08 Daimler Benz Ag Silicon-germanium photodetector
FR2764117B1 (en) * 1997-05-30 1999-08-13 Sgs Thomson Microelectronics CONTACT ON A TYPE P REGION
US5965875A (en) * 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
US6350663B1 (en) * 2000-03-03 2002-02-26 Agilent Technologies, Inc. Method for reducing leakage currents of active area diodes and source/drain diffusions
US6483116B1 (en) * 2000-04-25 2002-11-19 Innovative Technology Licensing, Llc High performance ultraviolet imager for operation at room temperature
JP4154165B2 (en) * 2002-04-05 2008-09-24 キヤノン株式会社 PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGING DEVICE, CAMERA, AND IMAGE READING DEVICE USING THE SAME
US7009680B2 (en) * 2003-06-02 2006-03-07 Xtellus Inc. Narrow band tunable filter with integrated detector
US6953925B2 (en) * 2003-04-28 2005-10-11 Stmicroelectronics, Inc. Microlens integration
JP3878575B2 (en) * 2003-04-28 2007-02-07 松下電器産業株式会社 Solid-state imaging device and driving method thereof
JP4839008B2 (en) * 2005-03-28 2011-12-14 富士フイルム株式会社 Single-plate color solid-state image sensor
US20070099328A1 (en) * 2005-10-31 2007-05-03 Yuan-Sheng Chiang Semiconductor device and interconnect structure and their respective fabricating methods

Also Published As

Publication number Publication date
US7579668B2 (en) 2009-08-25
US20090008736A1 (en) 2009-01-08
TW200903826A (en) 2009-01-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees