1344131 •九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種有機電激發光顯示元件及其製 造方法，特別是有關有機電激發光顯示元件之補償方法。 【先前技術】 有機電激發光顯示器（organic electroluminescent devices)(又稱為有機發光二極體（organic light emitting 鲁 diode，OLED)顯示器）其發光原理係在有機分子材料（依 分子量大小可分為小分子材料（small molecule material) 及聚合物材料(polymer material))施加一外加電場使其產 '生發光現象。有機電激發光顯示器（organic • electroluminescent devices)因其為自發光性（self emission) 元件，可陣列式顯示（dot matrix type display)，具有輕 薄、高對比、低消耗功率、高解析度、反應時間短（fast response time)、不需背光源及廣視角等特性，且其面板 ® 尺寸可由4mm微型顯示器至1 〇〇吋之大型戶外看板顯示 斋’被視為下一世代之平面面板顯示器（flat panel display , FPD)。除了顯示器之應用外，由於有機電激發光元件更 可在輕薄、可撓曲之材質上形成陣列式結構，使其在應 用上更加的廣泛’尤其是非常適合應用於照明。一般預 估有機電激發光元件其發光效率若能提昇至l〇〇Lm/w以 上，有機電激發光顯示器裝置即有機會取代一般照明光 源0 0773-A31697TWF;P93084;f〇rever769 7 1344131 凊茶照第1圖，一開關電晶體1〇 發光單元_，且-驅動電晶體HM搞接到—電激1344131 • EMBODIMENT DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an organic electroluminescence display element and a method of fabricating the same, and more particularly to a method of compensating an organic electroluminescence display element. [Prior Art] Organic electroluminescent devices (also known as organic light emitting diodes (OLED) displays) are based on organic molecular materials (which can be divided into small molecular weights). A small molecule material and a polymer material exert an applied electric field to produce a "luminescence" phenomenon. Organic electroluminescent devices are light matrix type displays because of their self-emitting elements. They are light, high contrast, low power consumption, high resolution, and reaction time. Fast response time, no need for backlights and wide viewing angles, and its panel® size can range from 4mm microdisplays to 1 large outdoor kanban display. It is considered the next generation of flat panel displays (flat Panel display , FPD). In addition to the application of the display, the organic electroluminescent element can be formed into an array structure on a thin, flexible material, making it more widely used in applications, especially for lighting applications. Generally, if the luminous efficiency of the organic electroluminescent device can be increased to more than l〇〇Lm/w, the organic electroluminescent display device has the opportunity to replace the general illumination source 0 0773-A31697TWF; P93084; f〇rever769 7 1344131 According to Fig. 1, a switching transistor 1 〇 illuminating unit _, and - driving transistor HM is connected to - galvanic
=而’有機電激發光顯示器面板存在有畫素間均勾性P 2問題1別是有機電激發光顯示器在長時間操作之 後έ產生焭度的衰退的問題。 ’、 【發明内容】 因此’為解決上述問題’本發明之—目的為解 機電激發光顯示器面板晝素間均勾性不佳，或長時間授 產生哀退之相關問題，而使得有機電激發光顯示 裔晝素間之特性更為均勻。 —本發明一較佳實施例係提供一種有機電激發光顯示 元件’包括-晝素單元，此晝素單元包括：一基板，、包 括一控制區和一感測區；一開關元件和—驅動元件，位 於該控制區上；一感光二極體，位於該感測區上，其中 该感光二極體作為一光感測器；一有機電激發光單元， 位於該感測區上，且可照亮該光感測器；以及一電容器， 輕接到該光感測器和該驅動元件。其中，藉由該减光二 極體感應到該有機電激發光單元照射到該感光二極體之 光線，產生一對應到該有機電激發光單元之光電流，如 此’藉由該光電流調整該電容器之電壓，以控制通過該 驅動元件之電流，因此，改變該有機電激發光單元之照 度。 本發明另一較佳實施例係提供上述有機電激發光顯 0773-Α31697TWF;P93084;forever769 8 1344131 -示元件之製造方法，包括：提供一基板，該基板包括一 控制區和一感測區；形成一第一導電型薄膜電晶體於該 .控制區以及一感光二極體之一第一導電型區域於該感測 區；以及形成一第二導電型薄膜電晶體於該控制區以及 該感光二極體之一第二導電型區域於該感測區。 本發明其它較佳實施例也揭露一種裝置於上述有機 電激發光顯示元件之顯示面板或電子元件。= And 'organic electroluminescent display panel has the phenomenon of uniformity between pixels P 2 problem 1 is the problem that the organic electroluminescence display shows a decrease in temperature after long-term operation. ', [Summary of the Invention] Therefore, in order to solve the above problems, the present invention aims to solve the problem that the electromechanical excitation light display panel has poor homogeneity between the elements, or the problem of retreating for a long time, so that the organic electric excitation The light shows that the characteristics of the genus are more uniform. A preferred embodiment of the present invention provides an organic electroluminescent display element comprising a halogen element, the substrate comprising: a substrate, including a control region and a sensing region; a switching element and a driver An element is located on the control area; a photosensitive diode is disposed on the sensing area, wherein the photosensitive diode acts as a photo sensor; an organic electroluminescent unit is located on the sensing area, and Illuminating the photo sensor; and a capacitor lightly coupled to the photo sensor and the driving element. The light that is irradiated to the photosensitive diode by the organic dimming light unit is induced by the dimming diode to generate a photocurrent corresponding to the organic electroluminescent unit, such that the photocurrent is adjusted by the photocurrent The voltage of the capacitor controls the current through the drive element, thereby changing the illumination of the organic electroluminescent unit. Another preferred embodiment of the present invention provides the above-described organic electroluminescent display 0773-Α31697TWF; P93084; forever769 8 1344131 - a method for manufacturing the device, comprising: providing a substrate, the substrate comprising a control region and a sensing region; Forming a first conductive type thin film transistor in the control region and a first conductive type region of a photosensitive diode in the sensing region; and forming a second conductive type thin film transistor in the control region and the photosensitive One of the second conductivity type regions of the diode is in the sensing region. Other preferred embodiments of the present invention also disclose a display panel or electronic component mounted on the above-described organic electroluminescent display element.
【實施方式】 以下將以實施例詳細說明做為本發明之參考，且範 例係伴隨著圖示說明之。在圖示或描述中，相似或相同 之部分係使用相同之圖號。在圖示中，實 是厚度可擴大，以簡化或是方便標示。圖示中 分將以描述說明之。可了解的是，未緣示或描述之元件， 可以具有各«習此技藝之人所知的形式。此外，卷敛 述一層係位於一基板或是另一層上時，此層可直接：於 基板或是另一層上，或是其間亦可以有中介層。 μ在說明書中，有關，，於基板上，，(〇赠lying the su strate)、於該層上 ”(ab〇ve the iayer)或，，於 =敎述係表示與當層表面的相對位置關係= ==各層’因此’上述敘述可表示為與當層： 接接觸或中間有-或更多層相隔的非接觸狀態。 第2圖係為本發明一實施例具有補償元件 激發光顯示||之電路示意圖。請參 ·電 '弟2圖’ 一有機電 0773-A31697TWF;P93〇84；f〇rever769 9 1344131 '激發光顯示元件包括一晝素單元20。在晝素單元20中， 一例如開關積體電路（switch 1C)或是開關電晶體之開關 元件206控制有機電激發光顯示單元202。晝素單元20 亦包括一連接到電源線VP之驅動元件204(亦可稱為驅動 積體電路），其中通過驅動元件204之電流係可控制有機 電激發光單元202之照度。列掃瞄線230係對開關元件 206進行控制，以決定是否讓行資料線220之資料信號通 過。在本發明一較佳實施例中，一電容器208係連接到 驅動元件204之閘極，其中電容器208亦耦接一感光二 極體210 (作為光感測器）。此外，可對電容器208之電 壓進行調整，以根據光感測器2]0所感測到之有機電激 發光單元202之照度而控制通過驅動元件204的電流， 如此，可改變有機電激發光單元202之照度212做為補 償。 第30圖繪示本發明一實施例之有機發光單元之晝 素單元20的剖面圖。第3A圖〜第30圖係繪示本發明一 實施例形成一感測元件補償有機發光元件之製程中間剖 面圖。請參照第3A圖，首先提供一基板302，基板包括 一控制區304、一感測區306和一電容區307。於基板302 上形成一緩衝層308，緩衝層308可以是氧化矽、氮化矽 或是氮氧化矽所組成，在本發明之一較佳實施例中，緩 衝層308係為氧化矽和氮化矽之堆疊層，而其厚度可以 為例如氮化矽約為350〜650埃，氧化矽約為1000〜1600 埃。 0773-A31697TWF;P93084;f〇rever769 10 1344131 接下來，形成一導電層（未續'示）於緩衝層308上。 此導電層可以是-多晶销組成，舉例來說，導電層可 •首先以化學氣相沉積方法沉積—非晶矽，再以準分子雷 射退火（Excimer Laser Annealing，以下可簡稱ELA)將其 轉換成多晶梦。之後’將導電層以傳統之微影和触刻方 法定義成一第一主動層310和—第二主動層312於基板 之控制區304上方，並形成—第三主動層31〇1與一第四 •主動層3m於感測區306上方，以及形成一底部電極3〇9 於基板302之電容區307的上方。 ，其後，如第3B圖所示，以光阻314、3141分別遮 住第一主動層312與第三主動層3I(H，而對主動層…、 3m卩及底部電極309進行一通道佈植步驟⑽知^ Ping )在本發明之一幸父佳實施例中，此佈植步驟3 ! 6 可佈植B + ’而其摻雜量可為1Eu/cm2左右或以下。 ，後續’請參照第3C圖，第三主動層31〇1被光阻3141 #遮住；第二主動層m被光阻叫遮住；第一主動層W 之通道區320被光阻318遮住。並隨後於第一主動層31〇 佈植N+離子322以形成_電晶體之源極似和汲極 3%。同時’ N+離子也被植入外露之第四主動層川卜 ，底部電極3G9,因而形成—感光二極體（作為一光感測 益之N+區域3121a。在本發明之一較佳實施例中， 此離子可以是鱗，而其換雜量可為1£14〜腿/c， 接者，請參照第3D圖，移除上述光阻314、3141 與川’並毯覆性沉積一閘極介電層328於第一主動層 0773-A31697TWF；P93084;f〇rever769 ,, 1344131 N+U Γΐίΐ動層312、第三主動層3101、感光二極體之 域3l2la、，緩衝層308和電容區3〇7夕τ兩 .士:：極介電層328可以為氧化發、氮化發、氮氧I:9 是其堆疊層，或是其它高介電材料所組成。需 庄思的疋’閘極介電層328 ♦六 電層。閘極介電声328之一接+电谷°°糸供作電容介 後病1Λ Γ μ滅學氣相沈積法。 於門極二：”“犯圖，沉積一閘極導電層(未繪示) 於閘極介電層328上 或是金屬，在本發明之層了以為摻雜之多晶石夕 以為厚度約為1500〜2500埃之M〇。 I电曰了 圖形：著在之:刻方法對_電層進行 m π β 上方形成Ν型電晶體閘極 且於心Γ主動層312上方形成Ρ型電晶體閘極332， 門福入:區斯上形成一上電極335’如此，下電極309、 “二1 32MDjlf# 335構成如第2圖所示之電容 〇 S月麥照第3F圖’在形成上述閘極330、332之後， 2行-輕摻雜步驟叫參雜）337,以例如離子佈植的 m’-於N型電晶體中第—主動層310通道區320兩側 y、圼摻雜源/極區336(light d〇ped drain，以下可簡稱 LD〇)，如此，在控制區3〇4形成第2圖所示之N型電曰 ，之開，το件206和P型電晶體之驅動元件2〇4。在本發 =2:例中，開關元件206和驅動元件204 ^ 〇773-A31697TWp;p93〇84：f〇rever769 12 1344131 請蒼照第3G圖，後續形成光阻338、3381以分別 遮住第一主動層310、感光二極體之N+區域3〗21a。並 .進行一離子佈植步驟34〇(如佈植p型摻雜物），以在p型 ‘電晶體閘極下方之通道區342兩側形成源極344_和汲極 —346’同時形成感光二極體之p+區域31〇la。 請參照第3H圖，接著移除上述之光 阻 338、338 1， 並毯覆性的沉積一介電層348於控制區304之閘極介電 層328、N型電晶體閘極330、P型電晶體閘極332、N+ 區域3121a、感測區306之P+區域31〇la、及電容區307 之上電極335上。 介電層348可依照產品的需求或製程要求而決定其 組成和厚度’舉例來說’介電層348可由氧化矽、氮化 石夕、氮氧化石夕、其組合或其堆疊層所組成，另外，介電 層348又可以為低介電材料，例如··聚烯銨（p〇Iyiniide)、 旋轉玻璃（SOG)、類鑽石碳（例如美商應材所開發之Black Diamond)、氟矽玻璃FSG，Dow Chemical所開發之 SILKTM ’ Trikon Technologies 所開發之 Orion™， Honeywell所開發之FLARE™，JSR Micro所開發之 LKD、Xerogel、Aerogel，多晶氟化碳和/或其它材料所組 成，或是可以為高介電材料例如：Ta205、Hf02、AI203、 In02、La203、Zr〇2、Ta02、矽化物、鋁化物和上述金屬. 氧化物之氣氧化物，和約鈦礦結構之氧化物 (perovskite-type oxide)。在本發明之較佳實施例中，介電 層348係為氧化;ε夕和氮化;5夕之堆疊層，.更佳為氮化;5夕/氧 0773-A31697TWF;P93084;f〇revcr769 13 乳化矽之堆疊結構’其中下層 2500〜3500埃，彔几a广— ’心件没4為 ,,, 旱又約為2500〜3500埃，上層款 .夕之厚度約為5〇〇〜1500埃。介雷；s 括介興名知a "電層348之沉積方式包 Μ相沈積法。而且，可藉纟 以活化摻雜物。 k加熱退Λ衣程 洞』=二圖’以傳統之黃光和钮刻製程定義接觸 電声328卜+感囊3G6之介電層348和閘極介 二上製程包括乾#刻法或刪法。 傷扩皮m 由化干軋相沈積法而於感測區 3〇6依序形成導電薄膜349a ( ， 電薄膜349b。導電薄膜349a埴 曰曰石夕涛膜）與介 “入· 填滿接觸洞348卜並且覆 盍介電層348。介電薄膜349b覆罢 復 设现冷电溥膜349a。導電 導==:=為= 可以是氮切或氧切。在其它二:二:：:: 石夕感光二極體區域係於導電_ 349a與介電薄膜遍 形成之後而圖案化並_，因而形成如第2圖所 感測态210。上述钱刻製程包括乾鼓 ’' 此實施例中，此光感測器210是一 钱刻法。在 而产甘—堆^ /丨士 只向非晶石夕二極體； 而在其匕貫施例中，可以是直立式二極體。 請參照第3K圖，其後以傳統之黃光和㈣製程， 圖形化"電層348和閑極介電層328， 354分別暴露Λ型電晶體之源極324、閘極现和^ 326及Ρ型電β曰體之源極344、閑極332和汲極州， 0773-Α31697TWF;P93084;forever769 14 1344131 ’以供做後續金屬導線連接用。 接下來，請參照第3L圖，毯覆性的沉積一金屬層（未 繪示），並隨後以習知的黃光和蝕刻技術，圖形化金屬層， 以於上述開口 354中形成導電接觸356。根據本發明一較 佳實施例，此開關元件與驅動元件之閘極可以是同一 層。例如，如第3L圖所示，開關元件206之閘極330以 及驅動元件204之閘極332係為同一層。 接下來，請參照第3M圖，形成一例如有機物或是 氧化矽所組成之平坦化層3 64。在本發明之較佳實施例 中，平坦化層364之厚度約介於10000埃〜50000埃，並 在接下來的步驟，以傳統的黃光及蝕刻方法圖形化平坦 化層364，以在上述之導電接觸356上方形成接觸開口 366。在本發明之一較佳實施例中，接觸開口 366係暴露 P型電晶體之汲極346上方之導電接觸356。 後續，請參照第3N圖，形成一例如銦錫氧化物 (indium tin oxide，以下可簡稱ITO)之晝素電極層368於 平坦化層364上，並電性連接到上述導電接觸356。之後， 形成一例如氧化物或是有機物所組成之畫素定義層370 於部分平坦化層3 64及晝素電極層3 6 8上，特別是，晝 素定義層370暴露部分或全部之光感測元件210。 後續，請參照第30圖，在上述之晝素電極層368 和晝素定義層370上方形成有機電激發光層372。在本發 明之一實施例中，有機電激發光層372在畫素電極層368 上（又可稱為陽極導電層）包括依序設置之一電洞注入 0773-A31697TWF;P93084；forever769 15 1J44131 ^-電洞傳輸層、一有機發光材料層、一電子傳輸層、 浐田子注t層以及一陰極導電層。其中，陽極導電層係 :銦錫氧化物（In2〇3:Sn，簡稱為_，其具有易蚀刻 ’、低成膜溫度、低電阻等優點。當外加一偏壓之後， :子、電洞係分別經過電子傳輸層、電洞傳輸層而進入 2發光材料層中並結合成為—激發光子（㈣ιωη)，再將 月'里釋放出來而回到基態（ground state)，而在這些被釋放[Embodiment] The following is a detailed description of the embodiments, and the examples are illustrated with the accompanying drawings. In the drawings or the description, similar or identical parts use the same drawing numbers. In the illustration, the thickness can be expanded to simplify or facilitate labeling. The points in the illustration will be described by description. It will be appreciated that elements not shown or described may be in a form known to those skilled in the art. In addition, when the layer is placed on a substrate or another layer, the layer may be directly on the substrate or another layer, or may have an interposer therebetween. In the specification, relating to, on the substrate, (lying on the su strate), on the layer "(ab〇ve the iayer) or, in the = description system and the relative position of the surface of the layer Relationship = = = each layer 'so the above description can be expressed as a non-contact state with the layer: contact or with - or more layers in between. Figure 2 is an embodiment of the invention with compensation element excitation light display | Schematic diagram of the circuit. Please refer to the electrician's 2 diagram'. An organic electric 0773-A31697TWF; P93〇84; f〇rever769 9 1344131 'The excitation light display element includes a halogen unit 20. In the halogen unit 20, For example, the switching integrated circuit (switch 1C) or the switching transistor 206 of the switching transistor controls the organic electroluminescent display unit 202. The halogen unit 20 also includes a driving element 204 connected to the power line VP (also referred to as a driving product). The body circuit), wherein the illuminance of the organic electroluminescent unit 202 can be controlled by the current system of the driving element 204. The column scanning line 230 controls the switching element 206 to determine whether to pass the data signal of the data line 220. A preferred embodiment of the present invention For example, a capacitor 208 is connected to the gate of the driving component 204, wherein the capacitor 208 is also coupled to a photodiode 210 (as a photosensor). Further, the voltage of the capacitor 208 can be adjusted to be based on the light. The illuminance of the organic electroluminescent light unit 202 sensed by the sensor 2]0 controls the current through the driving element 204, and thus, the illuminance 212 of the organic electroluminescent light unit 202 can be changed as compensation. A cross-sectional view of a pixel unit 20 of an organic light-emitting unit according to an embodiment of the present invention. FIGS. 3A to 30 are cross-sectional views showing a process of forming a sensing element compensation organic light-emitting element according to an embodiment of the present invention. 3A, a substrate 302 is provided. The substrate includes a control region 304, a sensing region 306, and a capacitor region 307. A buffer layer 308 is formed on the substrate 302. The buffer layer 308 may be tantalum oxide, tantalum nitride or In a preferred embodiment of the present invention, the buffer layer 308 is a stacked layer of tantalum oxide and tantalum nitride, and the thickness thereof may be, for example, tantalum nitride of about 350 to 650 angstroms. About 1000~16 00 Å. 0773-A31697TWF; P93084; f〇rever769 10 1344131 Next, a conductive layer (not shown) is formed on the buffer layer 308. The conductive layer may be a polysilicon pin, for example, a conductive layer • First, a chemical vapor deposition method is used to deposit an amorphous germanium, which is then converted into a polycrystalline dream by Excimer Laser Annealing (hereinafter referred to as ELA). Then, the conductive layer is defined by a conventional lithography and lithography method as a first active layer 310 and a second active layer 312 over the control region 304 of the substrate, and a third active layer 31〇1 and a fourth are formed. The active layer 3m is above the sensing region 306 and forms a bottom electrode 3〇9 above the capacitive region 307 of the substrate 302. Then, as shown in FIG. 3B, the first active layer 312 and the third active layer 3I (H are respectively blocked by the photoresists 314 and 3141, and one channel is provided for the active layer, the 3m, and the bottom electrode 309. Planting step (10) knows that in the embodiment of the present invention, the planting step 3! 6 can implant B + ' and its doping amount can be about 1 Eu/cm 2 or less. Next, please refer to FIG. 3C, the third active layer 31〇1 is blocked by the photoresist 3141#; the second active layer m is blocked by the photoresist; the channel region 320 of the first active layer W is covered by the photoresist 318 live. N+ ions 322 are then implanted in the first active layer 31 to form a source of _ transistors and a drain of 3%. At the same time, 'N+ ions are also implanted in the exposed fourth active layer, the bottom electrode 3G9, thus forming a photosensitive diode (as a N+ region 3121a of a light sensing benefit. In a preferred embodiment of the invention) This ion can be a scale, and its replacement amount can be 1£14~leg/c. Please refer to the 3D figure to remove the above-mentioned photoresist 314, 3141 and Chuan's and blanket deposition. The dielectric layer 328 is on the first active layer 0773-A31697TWF; P93084; f〇rever769, 1344131 N+U Γΐί ΐ layer 312, third active layer 3101, photodiode domain 31l, buffer layer 308 and capacitor region 3〇7夕τ2.士:: The dielectric layer 328 can be oxidized, nitrided, nitrous oxide I:9 is a stack of layers, or other high dielectric materials. Gate dielectric layer 328 ♦ six electrical layers. One of the gate dielectric 328 is connected to + electric valley ° ° 糸 for capacitor dielectric 1 Λ 灭 μ 学 气相 气相 。 。 于 灭 灭 灭 灭 灭 灭 灭 灭 灭 灭 灭 灭In the figure, a gate conductive layer (not shown) is deposited on the gate dielectric layer 328 or a metal. In the layer of the present invention, the doped polycrystalline stone is considered to have a thickness of about 1500~ 2500 angstroms M. I 曰 图形 : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : , the door is in: an upper electrode 335' is formed on the region, such that the lower electrode 309, "two 1 32MDjlf # 335 constitutes the capacitor 〇S mai photo 3F diagram shown in FIG. 2" in forming the above-mentioned gate 330 After 332, the 2-row-light doping step is called doping 337, for example, ion implantation of m'-in the N-type transistor, the first active layer 310 channel region 320 on both sides y, erbium doping source / pole The area 336 (light d〇ped drain, hereinafter referred to as LD〇), so that the N-type electric enthalpy shown in FIG. 2 is formed in the control area 3〇4, and the driving elements of the το-piece 206 and the P-type transistor are opened. 2〇4. In the present invention, the switching element 206 and the driving element 204 ^ 〇 773-A31697 TWp; p93 〇 84: f 〇 rever 769 12 1344131 Separating the first active layer 310, the N+ region 3 21a of the photodiode, respectively, and performing an ion implantation step 34 (such as implanting a p-type dopant) to form a p-type 'transistor A source 344_ and a drain 346' are formed on both sides of the channel region 342 at the bottom, and a p+ region 31〇1a of the photodiode is formed at the same time. Referring to FIG. 3H, the photoresist 338, 338 1, is removed. And depositing a dielectric layer 348 to the gate dielectric layer 328 of the control region 304, the N-type transistor gate 330, the P-type transistor gate 332, the N+ region 3121a, and the P+ region of the sensing region 306. 31〇la, and capacitor region 307 on the upper electrode 335. The dielectric layer 348 can determine its composition and thickness according to the requirements of the product or the process requirements. For example, the dielectric layer 348 can be composed of yttrium oxide, cerium nitride, oxynitride, combinations thereof, or stacked layers thereof. The dielectric layer 348 can be a low dielectric material, such as polyfluorene (p〇Iyiniide), rotating glass (SOG), diamond-like carbon (such as Black Diamond developed by American Chemicals), fluorocarbon glass. FSG, SILKTM developed by Dow Chemical, OrionTM developed by Trikon Technologies, FLARETM developed by Honeywell, LKD, Xerogel, Aerogel, polycrystalline fluorinated carbon and/or other materials developed by JSR Micro, or It may be a high dielectric material such as Ta205, Hf02, AI203, In02, La203, Zr〇2, Ta02, telluride, aluminide and the above-mentioned metal. Oxide oxides, and oxides of the titanium structure (perovskite) -type oxide). In a preferred embodiment of the present invention, the dielectric layer 348 is oxidized; ε 夕 and nitriding; 5 堆叠 stack layer, more preferably nitriding; 5 eve / oxygen 0773-A31697TWF; P93084; f 〇 revcr 769 13 emulsified enamel stacking structure 'the lower layer 2500~3500 angstroms, 彔 a a wide--the heart piece is not 4,, the drought is about 2500~3500 angstroms, the upper layer. The thickness of the eve is about 5〇〇~1500 Ai. Jie Lei; s including Jie Xingmingzhi a " electric layer 348 deposition method including Μ phase deposition method. Moreover, the dopant can be activated by 纟. k heating back to the Λ 程 洞 洞 洞 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = law. The wound film is formed by a dry-rolling phase deposition method in the sensing region 3〇6 to form a conductive film 349a (the electric film 349b. The conductive film 349a 埴曰曰石夕涛膜) and the "into fill contact" The hole 348 is covered and the dielectric layer 348 is covered. The dielectric film 349b is overlaid with the cold electric film 349a. The conductive conduction ==:= = can be nitrogen cut or oxygen cut. In the other two: two::: : The lithographic photodiode region is patterned after the conductive _349a and the dielectric film are formed, and thus forms the sensed state 210 as shown in FIG. 2. The above-described process includes a dry drum'' in this embodiment. The light sensor 210 is a money engraving method. In the case of the 施 — 堆 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 非晶Please refer to FIG. 3K, and then, in the conventional yellow light and (4) process, the patterned "electric layer 348 and the dummy dielectric layers 328, 354 respectively expose the source 324 of the germanium transistor, the gate and the ^326 The source 344, the idle pole 332 and the 汲 州, 0773-Α31697TWF; P93084; forever769 14 1344131 'for the subsequent metal wire connection. Referring to FIG. 3L, a metal layer (not shown) is blanket deposited, and then the metal layer is patterned by conventional yellow light and etching techniques to form conductive contacts 356 in the openings 354. According to a preferred embodiment of the present invention, the switching element and the gate of the driving element may be in the same layer. For example, as shown in FIG. 3L, the gate 330 of the switching element 206 and the gate 332 of the driving element 204 are the same. Next, please refer to FIG. 3M to form a planarization layer 3 64 composed of, for example, organic matter or yttrium oxide. In a preferred embodiment of the invention, the thickness of the planarization layer 364 is approximately 10,000 angstroms~ 50,000 angstroms, and in a subsequent step, the planarization layer 364 is patterned in a conventional yellow light and etch process to form a contact opening 366 over the conductive contact 356. In a preferred embodiment of the invention, the contact The opening 366 exposes the conductive contact 356 above the drain 346 of the P-type transistor. Subsequently, referring to FIG. 3N, a halogen electrode layer 368 such as indium tin oxide (hereinafter referred to as ITO) is formed. Flattening layer 3 64, and electrically connected to the conductive contact 356. Thereafter, a pixel defining layer 370 composed of, for example, an oxide or an organic material is formed on the partial planarization layer 3 64 and the halogen electrode layer 3 6 8 , in particular The halogen defining layer 370 exposes part or all of the light sensing element 210. Subsequently, referring to Fig. 30, an organic electroluminescent layer 372 is formed over the above-described halogen electrode layer 368 and the halogen defining layer 370. In one embodiment of the invention, the organic electroluminescent layer 372 on the pixel electrode layer 368 (also referred to as an anode conductive layer) includes a hole injection in the order of 0773-A31697TWF; P93084; forever769 15 1J44131 ^- a hole transport layer, an organic light emitting material layer, an electron transport layer, a Putian sub-t layer, and a cathode conductive layer. The anode conductive layer is: indium tin oxide (In2〇3:Sn, abbreviated as _, which has the advantages of easy etching, low film forming temperature, low resistance, etc.) when a bias is applied, the sub-hole The electron transport layer and the hole transport layer respectively enter the 2 luminescent material layer and combine to become an excitation photon ((4) ιωη), and then release the moon's back to the ground state, and are released in these
出來的能量中’會依據所選擇的發光材料的不同而以不 同顏色光的型式釋放出來，例如：紅光⑻、綠光⑼、藍 光(B) 。 ι 接著，形成一例如鋁或銀等具高反射係數所組成之 陰極374於有機電激發光層仍上，如此，畫素電極層 规。、有機電激發光们72和陰極374係構成有機電激發 光單元’如第2圖所示’而形成向下發射有機電激發光 元件202。 如第2圖和第30圖所示，在本發明之一些實施例 中，當有機電激發光單元202照射光感測器21〇時，光 $測為210中係產生光電流，有機電激發光單元2〇2之 儿度係可決疋光電流之大小，因此，可依據光感測器2ι〇 所感測到之有機電激發光單元202照度，調整耦接到驅 動元件204之電容器2〇8的電壓，以控制通過驅動元件 204之電流’如此’可改變有機電激發光單元2〇2之照度 3做為補償。因此，在有機電激發光元件衰退之後，可 藉由上述之内部補償改進有機電激發光單元202之亮度 16 0773-A3l697TWF;P93084;f〇rever769 1344131 均勻性。The energy coming out will be released in different types of light depending on the selected luminescent material, such as red light (8), green light (9), and blue light (B). Next, a cathode 374 having a high reflection coefficient such as aluminum or silver is formed on the organic electroluminescent layer, and thus, the pixel electrode layer. The organic electroluminescence light 72 and the cathode 374 constitute an organic electroluminescence unit ’ as shown in Fig. 2 to form a downward-emitting organic electroluminescence element 202. As shown in FIG. 2 and FIG. 30, in some embodiments of the present invention, when the organic electro-excitation light unit 202 illuminates the photo sensor 21, the photo-current is generated in 210, and the organic electric excitation is performed. The light unit 2〇2 can determine the magnitude of the photocurrent. Therefore, the capacitor 2〇8 coupled to the driving element 204 can be adjusted according to the illuminance of the organic electroluminescent unit 202 sensed by the photosensor 2ι. The voltage is controlled to control the current through the drive element 204 'so' to change the illuminance 3 of the organic electroluminescent light unit 2〇2 as compensation. Therefore, after the organic electroluminescent device is degraded, the brightness of the organic electroluminescent unit 202 can be improved by the internal compensation described above. 16 0773-A3l697TWF; P93084; f〇rever769 1344131 Uniformity.
第4圖係顯示一晝素單元20(例如第2圖或是第3〇 .圖所顯示之畫素單元）可併入一面板（例如面板30)，而此 面板係可以為有機電激發光面板，此外，此面板可以做 為各種型怨之電子元件（例如電子元件之一部分。一 般來說，電子元件包括有機電激發光面板30和輸入單元 4〇更甚者，輪入單元4〇係操作性的耦接到有機電激發 f面板30且心供輸入訊號（例如一晝面訊號），舉例來 說，此電子元件50可以為一個人數位助理（person^ 山gUal assistant，簡稱pDA)、筆記型電 手機、車”視㈣TV)或技㈣目機。 、雖然本發明已以較佳實施例揭露如上，然其並非用 疋士發明’任何熟習此技藝者，在不脫離本發明之 之保枝更動與潤飾，因此本發明 …祀田視後附之中請專利範圍所界定者為準。 【圖式簡單說明】 間均機電激發光—板存在有畫素 激發二2干圖:之為雷本發明-實施例具有補償元件之有機電 激發先顯不态之電路示意圖。 第3Α圖〜第3〇 測元件補償有機發光 第4圖係說明第 圖係繪示本發明一實施例形成一感 元件之製程中間剖面圖。 2或3Ν圖所示之晝素單元2〇可以 〇773-A3l697TWF；P93〇84;forever769 17 1344131 裝置於一面板（在此為面板30)，此面板例如是OLED面 板0 【主要元件符號說明】 VP〜電源線； 20〜晝素單元； 30〜有機電激發光面板；40〜輸入單元； 50〜電子元件； 102〜開關電晶體； 10 4〜驅動電晶體， 106〜有機電激發光單元； 202〜有機電激發光顯示單元； 204〜驅動元件； 206〜 開關元件； 208〜電容器； 210- ^感光二極體； 220〜行資料線； 230〜 列掃瞒線， 302〜基板； 304- -控制區； 3 0 6〜感測區； 307 - ^電容區， 3 0 8〜緩衝層； 309, -底部電極； 3 10〜第一主動層； 312〜 第二主動層； 3101〜第三主動層； 3121 〜第四主動層； 3 14〜光阻； 3141 〜光阻； 316〜通道佈植步驟； 320〜 通道區； 3 121 a〜感光二極體之N+區域， 322〜N +離子： 318〜 光阻； 324〜N型電晶體之源極； 326〜 N型電晶體之汲極； 328〜閘極介電層； 330- N型電晶體閘極； 0773-A31697TWF;P93084;forever769 18 1344131 332〜P型電晶體閘極； 208〜電容器； 33 6〜輕掺雜源/極區； 338〜光阻； 342〜通道區； 346~汲極； 3481〜接觸洞； 349b〜介電薄膜； 356〜導電接觸； 366〜接觸開口； 370〜晝素定義層； 374〜陰極。 335〜上電極； 337〜輕摻雜步驟； 3381〜光阻； 340〜離子佈植步驟； 344〜源極； 348〜介電層； 349a~導電薄膜； 3 54〜開口， 364〜平坦化層； 368〜晝素電極層； 372〜有機電激發光層 0773-A31697TWF;P93084;forever769 19Figure 4 shows that a unit of the unit 20 (for example, the pixel unit shown in Fig. 2 or Fig. 3) can be incorporated into a panel (e.g., panel 30), and the panel can be organic electroluminescent The panel, in addition, the panel can be used as a part of various types of electronic components (for example, electronic components). Generally, the electronic components include the organic electroluminescent panel 30 and the input unit 4, and the wheeled unit 4 The operative coupling is coupled to the organic electrical excitation f panel 30 and the input signal (for example, a facial signal). For example, the electronic component 50 can be a personal assistant (personal gUal assistant, pDA for short), notes. Type of mobile phone, car "four (TV) TV) or technology (four) eye machine. Although the present invention has been disclosed in the preferred embodiment as above, it is not invented by the gentleman 'any skilled in the art, without departing from the invention The branch is moved and retouched, so the invention is as defined in the patent scope of the attached file. [Simplified illustration] The average electromechanical excitation light-plate has a pixel excitation 2 2 dry picture: Rayben invention - implementation Schematic diagram of a circuit with organic excitation of a compensating element. Fig. 3 to Fig. 3: Compensation for organic light emission. Fig. 4 is a cross-sectional view showing the process of forming a sensing element according to an embodiment of the present invention. Fig. 2 or 3Ν shows the element unit 2〇 can be 〇 773-A3l697TWF; P93〇84; forever769 17 1344131 is mounted on a panel (here panel 30), this panel is for example OLED panel 0 [main component symbol Description] VP ~ power line; 20 ~ halogen unit; 30 ~ organic electroluminescent panel; 40 ~ input unit; 50 ~ electronic components; 102 ~ switch transistor; 10 4 ~ drive transistor, 106 ~ organic electroluminescent Unit; 202~organic electroluminescent display unit; 204~ drive element; 206~ switch element; 208~capacitor; 210-^photodiode; 220~ line data line; 230~ column broom line, 302~ substrate; 304--control zone; 3 0 6~ sensing zone; 307 - ^ capacitor zone, 3 0 8~ buffer layer; 309, - bottom electrode; 3 10~ first active layer; 312~ second active layer; Third active layer; 3121 Fourth active layer; 3 14 ~ photoresist; 3141 ~ photoresist; 316 ~ channel implantation step; 320 ~ channel area; 3 121 a ~ N+ region of the photodiode, 322~N + ion: 318~ photoresist ; source of 324~N type transistor; drain of 326~N type transistor; 328~gate dielectric layer; 330-N type transistor gate; 0773-A31697TWF; P93084;forever769 18 1344131 332~P Type transistor gate; 208~ capacitor; 33 6~ lightly doped source/pole region; 338~ photoresist; 342~channel region; 346~dip; 3481~ contact hole; 349b~dielectric film; Contact; 366~ contact opening; 370~ quinone defined layer; 374~ cathode. 335~Upper electrode; 337~light doping step; 3381~ photoresist; 340~ ion implantation step; 344~source; 348~ dielectric layer; 349a~ conductive film; 3 54~ opening, 364~ flattening layer ; 368 ~ halogen electrode layer; 372 ~ organic electroluminescent layer 0773-A31697TWF; P93084; forever769 19