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TWI318767B - 3t1d memory cells using gated diodes and methods of use thereof - Google Patents

3t1d memory cells using gated diodes and methods of use thereof

Info

Publication number
TWI318767B
TWI318767B TW094100298A TW94100298A TWI318767B TW I318767 B TWI318767 B TW I318767B TW 094100298 A TW094100298 A TW 094100298A TW 94100298 A TW94100298 A TW 94100298A TW I318767 B TWI318767 B TW I318767B
Authority
TW
Taiwan
Prior art keywords
methods
memory cells
gated diodes
gated
diodes
Prior art date
Application number
TW094100298A
Other languages
English (en)
Other versions
TW200537488A (en
Inventor
Wing K Luk
Robert H Dennard
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200537488A publication Critical patent/TW200537488A/zh
Application granted granted Critical
Publication of TWI318767B publication Critical patent/TWI318767B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
TW094100298A 2004-01-05 2005-01-05 3t1d memory cells using gated diodes and methods of use thereof TWI318767B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/751,713 US7027326B2 (en) 2004-01-05 2004-01-05 3T1D memory cells using gated diodes and methods of use thereof

Publications (2)

Publication Number Publication Date
TW200537488A TW200537488A (en) 2005-11-16
TWI318767B true TWI318767B (en) 2009-12-21

Family

ID=34711486

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094100298A TWI318767B (en) 2004-01-05 2005-01-05 3t1d memory cells using gated diodes and methods of use thereof

Country Status (4)

Country Link
US (1) US7027326B2 (zh)
KR (1) KR100646972B1 (zh)
CN (1) CN100433187C (zh)
TW (1) TWI318767B (zh)

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US8324667B2 (en) * 2004-01-05 2012-12-04 International Business Machines Corporation Amplifiers using gated diodes
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US7136296B2 (en) * 2005-02-28 2006-11-14 International Business Machines Corporation Static random access memory utilizing gated diode technology
US7385251B2 (en) * 2006-01-18 2008-06-10 International Business Machines Corporation Area-efficient gated diode structure and method of forming same
US8648403B2 (en) * 2006-04-21 2014-02-11 International Business Machines Corporation Dynamic memory cell structures
US7466617B2 (en) * 2007-01-16 2008-12-16 International Business Machines Corporation Multi-port dynamic memory structures
US7805658B2 (en) * 2007-02-12 2010-09-28 International Business Machines Corporation DRAM Cache with on-demand reload
US7732877B2 (en) * 2007-04-02 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Gated diode with non-planar source region
US20090103382A1 (en) * 2007-10-18 2009-04-23 Wing Kin Luk Gated Diode Sense Amplifiers
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CN101894583B (zh) * 2010-07-08 2016-03-02 矽创电子股份有限公司 节省电路面积的记忆单元
US9224496B2 (en) 2010-08-11 2015-12-29 Shine C. Chung Circuit and system of aggregated area anti-fuse in CMOS processes
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
US8488359B2 (en) 2010-08-20 2013-07-16 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices
US10229746B2 (en) 2010-08-20 2019-03-12 Attopsemi Technology Co., Ltd OTP memory with high data security
US9025357B2 (en) 2010-08-20 2015-05-05 Shine C. Chung Programmable resistive memory unit with data and reference cells
US8804398B2 (en) * 2010-08-20 2014-08-12 Shine C. Chung Reversible resistive memory using diodes formed in CMOS processes as program selectors
US8929122B2 (en) 2010-08-20 2015-01-06 Shine C. Chung Circuit and system of using a junction diode as program selector for resistive devices
US9431127B2 (en) 2010-08-20 2016-08-30 Shine C. Chung Circuit and system of using junction diode as program selector for metal fuses for one-time programmable devices
US10923204B2 (en) 2010-08-20 2021-02-16 Attopsemi Technology Co., Ltd Fully testible OTP memory
US9818478B2 (en) 2012-12-07 2017-11-14 Attopsemi Technology Co., Ltd Programmable resistive device and memory using diode as selector
US9460807B2 (en) 2010-08-20 2016-10-04 Shine C. Chung One-time programmable memory devices using FinFET technology
US9042153B2 (en) 2010-08-20 2015-05-26 Shine C. Chung Programmable resistive memory unit with multiple cells to improve yield and reliability
US8830720B2 (en) 2010-08-20 2014-09-09 Shine C. Chung Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices
US9251893B2 (en) 2010-08-20 2016-02-02 Shine C. Chung Multiple-bit programmable resistive memory using diode as program selector
US9824768B2 (en) 2015-03-22 2017-11-21 Attopsemi Technology Co., Ltd Integrated OTP memory for providing MTP memory
US9496033B2 (en) 2010-08-20 2016-11-15 Attopsemi Technology Co., Ltd Method and system of programmable resistive devices with read capability using a low supply voltage
US9711237B2 (en) 2010-08-20 2017-07-18 Attopsemi Technology Co., Ltd. Method and structure for reliable electrical fuse programming
US9236141B2 (en) 2010-08-20 2016-01-12 Shine C. Chung Circuit and system of using junction diode of MOS as program selector for programmable resistive devices
US9019742B2 (en) 2010-08-20 2015-04-28 Shine C. Chung Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memory
US9070437B2 (en) 2010-08-20 2015-06-30 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink
US10249379B2 (en) 2010-08-20 2019-04-02 Attopsemi Technology Co., Ltd One-time programmable devices having program selector for electrical fuses with extended area
US10916317B2 (en) 2010-08-20 2021-02-09 Attopsemi Technology Co., Ltd Programmable resistance memory on thin film transistor technology
US8988965B2 (en) 2010-11-03 2015-03-24 Shine C. Chung Low-pin-count non-volatile memory interface
US8923085B2 (en) 2010-11-03 2014-12-30 Shine C. Chung Low-pin-count non-volatile memory embedded in a integrated circuit without any additional pins for access
US9019791B2 (en) 2010-11-03 2015-04-28 Shine C. Chung Low-pin-count non-volatile memory interface for 3D IC
US8913449B2 (en) 2012-03-11 2014-12-16 Shine C. Chung System and method of in-system repairs or configurations for memories
US9496265B2 (en) 2010-12-08 2016-11-15 Attopsemi Technology Co., Ltd Circuit and system of a high density anti-fuse
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US8848423B2 (en) 2011-02-14 2014-09-30 Shine C. Chung Circuit and system of using FinFET for building programmable resistive devices
US10192615B2 (en) 2011-02-14 2019-01-29 Attopsemi Technology Co., Ltd One-time programmable devices having a semiconductor fin structure with a divided active region
US8995173B1 (en) * 2011-09-29 2015-03-31 Adesto Technologies Corporation Memory cells, devices and method with dynamic storage elements and programmable impedance shadow elements
US8912576B2 (en) 2011-11-15 2014-12-16 Shine C. Chung Structures and techniques for using semiconductor body to construct bipolar junction transistors
US9324849B2 (en) 2011-11-15 2016-04-26 Shine C. Chung Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC
US9136261B2 (en) 2011-11-15 2015-09-15 Shine C. Chung Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection
US8861249B2 (en) 2012-02-06 2014-10-14 Shine C. Chung Circuit and system of a low density one-time programmable memory
US9007804B2 (en) 2012-02-06 2015-04-14 Shine C. Chung Circuit and system of protective mechanisms for programmable resistive memories
US8917533B2 (en) 2012-02-06 2014-12-23 Shine C. Chung Circuit and system for testing a one-time programmable (OTP) memory
US9324625B2 (en) 2012-05-31 2016-04-26 Infineon Technologies Ag Gated diode, battery charging assembly and generator assembly
US9076526B2 (en) 2012-09-10 2015-07-07 Shine C. Chung OTP memories functioning as an MTP memory
US9183897B2 (en) 2012-09-30 2015-11-10 Shine C. Chung Circuits and methods of a self-timed high speed SRAM
US9324447B2 (en) 2012-11-20 2016-04-26 Shine C. Chung Circuit and system for concurrently programming multiple bits of OTP memory devices
TWI618081B (zh) * 2013-05-30 2018-03-11 半導體能源研究所股份有限公司 半導體裝置的驅動方法
US8929153B1 (en) * 2013-08-23 2015-01-06 Qualcomm Incorporated Memory with multiple word line design
KR20150138026A (ko) 2014-05-29 2015-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9412473B2 (en) 2014-06-16 2016-08-09 Shine C. Chung System and method of a novel redundancy scheme for OTP
US9767919B1 (en) 2016-04-15 2017-09-19 Micron Technology, Inc. Systems and methods for testing a semiconductor memory device having a reference memory array
WO2018044454A1 (en) * 2016-08-31 2018-03-08 Micron Technology, Inc. Memory cells and memory arrays
EP3507829B1 (en) * 2016-08-31 2022-04-06 Micron Technology, Inc. Memory cells and memory arrays
US11211384B2 (en) 2017-01-12 2021-12-28 Micron Technology, Inc. Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
US10726914B2 (en) 2017-04-14 2020-07-28 Attopsemi Technology Co. Ltd Programmable resistive memories with low power read operation and novel sensing scheme
US10535413B2 (en) 2017-04-14 2020-01-14 Attopsemi Technology Co., Ltd Low power read operation for programmable resistive memories
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme
US10032777B1 (en) 2017-06-05 2018-07-24 United Microelectronics Corp. Array of dynamic random access memory cells
US10861527B2 (en) 2017-06-27 2020-12-08 Inston, Inc. Systems and methods for optimizing magnetic torque and pulse shaping for reducing write error rate in magnetoelectric random access memory
WO2019006037A1 (en) * 2017-06-27 2019-01-03 Inston, Inc. REDUCTION OF WRITE ERROR RATE IN MAGNETOELECTRIC RAM
US10770160B2 (en) 2017-11-30 2020-09-08 Attopsemi Technology Co., Ltd Programmable resistive memory formed by bit slices from a standard cell library
TWI685842B (zh) * 2017-12-13 2020-02-21 湯朝景 3t1d sram細胞以及用於靜態隨機存取記憶體的存取方法及相關的裝置
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CN109638016B (zh) * 2019-01-02 2020-07-14 上海华虹宏力半导体制造有限公司 快闪存储器及其形成方法
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Also Published As

Publication number Publication date
TW200537488A (en) 2005-11-16
KR100646972B1 (ko) 2006-11-23
US7027326B2 (en) 2006-04-11
US20050146928A1 (en) 2005-07-07
KR20050072060A (ko) 2005-07-08
CN100433187C (zh) 2008-11-12
CN1691204A (zh) 2005-11-02

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MM4A Annulment or lapse of patent due to non-payment of fees