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TWI318332B - Chemically amplified positive photoresist composition - Google Patents

Chemically amplified positive photoresist composition

Info

Publication number
TWI318332B
TWI318332B TW094111895A TW94111895A TWI318332B TW I318332 B TWI318332 B TW I318332B TW 094111895 A TW094111895 A TW 094111895A TW 94111895 A TW94111895 A TW 94111895A TW I318332 B TWI318332 B TW I318332B
Authority
TW
Taiwan
Prior art keywords
photoresist composition
chemically amplified
positive photoresist
amplified positive
chemically
Prior art date
Application number
TW094111895A
Other languages
Chinese (zh)
Other versions
TW200606584A (en
Inventor
Ken Miyagi
Toshiaki Tachi
Satoshi Niikura
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200606584A publication Critical patent/TW200606584A/en
Application granted granted Critical
Publication of TWI318332B publication Critical patent/TWI318332B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW094111895A 2004-04-20 2005-04-14 Chemically amplified positive photoresist composition TWI318332B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004124223A JP4476680B2 (en) 2004-04-20 2004-04-20 Chemically amplified positive photoresist composition for implantation process

Publications (2)

Publication Number Publication Date
TW200606584A TW200606584A (en) 2006-02-16
TWI318332B true TWI318332B (en) 2009-12-11

Family

ID=35346370

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094111895A TWI318332B (en) 2004-04-20 2005-04-14 Chemically amplified positive photoresist composition

Country Status (4)

Country Link
JP (1) JP4476680B2 (en)
KR (1) KR100706010B1 (en)
CN (1) CN1690856A (en)
TW (1) TWI318332B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4893270B2 (en) * 2006-11-29 2012-03-07 住友化学株式会社 Chemically amplified positive resist composition
JP5075706B2 (en) * 2007-03-27 2012-11-21 富士フイルム株式会社 Positive photosensitive resin composition and cured film forming method using the same
WO2012014435A1 (en) 2010-07-30 2012-02-02 三菱瓦斯化学株式会社 Compound, radiation-sensitive composition, and method for forming resist pattern
KR20120107653A (en) 2011-03-22 2012-10-04 삼성디스플레이 주식회사 Photoresist resin composition and method of forming patterns by using the same
JP5825884B2 (en) * 2011-07-01 2015-12-02 旭化成イーマテリアルズ株式会社 Phenol resin composition and method for producing cured relief pattern
JP6425078B2 (en) * 2014-12-17 2018-11-21 Dic株式会社 Denatured novolac type phenolic resin, method of producing modified novolac type phenolic resin, photosensitive composition, resist material, and resist coating film
JP6951833B2 (en) * 2015-08-24 2021-10-20 学校法人 関西大学 Polymer compounds, radiation-sensitive compositions and pattern-forming methods
US20170059989A1 (en) 2015-08-24 2017-03-02 A School Corporation Kansai University Polymer compound, radiation sensitive composition and pattern forming method
US20170058079A1 (en) 2015-08-24 2017-03-02 A School Corporation Kansai University Polymer compound, radiation sensitive composition and pattern forming method
WO2019224248A1 (en) 2018-05-24 2019-11-28 Ridgefield Acquisition Novolak/dnq based, chemically amplified photoresist
US12164229B2 (en) * 2018-12-27 2024-12-10 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
CN114456336B (en) * 2022-03-22 2023-12-01 重庆大学 Preparation method and application of UV-degradable polymer material

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3755571B2 (en) 1999-11-12 2006-03-15 信越化学工業株式会社 Chemically amplified positive resist material and pattern forming method
JP4070393B2 (en) * 2000-01-17 2008-04-02 富士フイルム株式会社 Negative resist composition
KR100359220B1 (en) 2000-12-28 2002-11-04 제일모직주식회사 Photoresist composition
TWI262359B (en) * 2002-03-28 2006-09-21 Sumitomo Chemical Co Positive type chemical amplification resist composition
JP4053402B2 (en) * 2002-10-23 2008-02-27 東京応化工業株式会社 Positive photoresist composition for LCD production and method for forming resist pattern

Also Published As

Publication number Publication date
KR20060045809A (en) 2006-05-17
TW200606584A (en) 2006-02-16
JP2005308977A (en) 2005-11-04
KR100706010B1 (en) 2007-04-11
CN1690856A (en) 2005-11-02
JP4476680B2 (en) 2010-06-09

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