-，131.3046 九、發明說明： 【發明所屬之技術領域】 纟發明係關於一種藉由利用陽極接合之光電積體電 路(〇卿裝置之製造方法，且詳而言之，係關於一種特定 類型之光電積體電路震置之製造方法，其中光活化部分之 上側面係藉由陽極接合而以破璃予以密閉式密封。 【先前技術】 為了利用紅光雷射或紅外線雷射來密封被施加至 參卿(數位影音光碟）或⑶(光碟）之習知的光電積體電路裂 一置，通爷係使用環氧樹脂。該樹脂不僅提供透明特徵，且 亦提供極佳的特性，諸如可模塑性、抗渔性及低成本。然 而’此環氧密封樹脂具有一問題，亦即，#其受到用於下 -代，fVD的藍光雷射所照射時，其會因為藍光雷射之 本質能量而黃化造成透光性的喪失。因此，傳統的環氧樹 脂無法使用於由藍光雷射所照射之光電積體電路装置之 鲁射照射部分。 ^ 一為了解決上述的問題，舉例來說，已提出一種密閉式 逸封方法，其係揭示在日本專利特開平第⑽七彳祝號 中其中透明玻璃板晶片被接合至光電積體電路裝置之光 接收表面，使得該光接收表面可藉由藍光來予以照射。在 本方法中，该積體電路之光接收表面藉由透明黏膠而接合 至玻璃板晶片。為了能夠可靠地以此方法來實施此接合， 在日曰圓切割製程之後有必要將每一玻璃板晶片對準於每— 半導體ΒΘ片。之後，利用透明黏膠來將該玻璃板晶片接合 318333 6 '131.3046 至，半導體晶片。光接收表面以外之區域則以習知方法利 用％氧樹脂來予以封包。藉由此配置，便可能免除由於環 氧樹月曰因曝露於藍光雷射之本質能量而退化所造成的透明 f門通應’主思，上述的問題亦會發生在以類似方式封包 之藍光發光元件。 在玻璃板晶片藉由使用透明黏膠而接合至諸如光電 f體電路裝置之光接收表面或發光表面之光傳輸表面之 j如上所述有品要藉由切割該玻璃板來製備玻璃板晶 參片，且亦需藉由切割該晶圓來製備半導體晶片。這會需要 —很多製程步驟，且會造成最終產品之品質變異。再者，由 於此方法係使用透明黏膠來接合該半導體晶片與該玻璃板 晶片，因此最終產品仍會由於此黏膠之退化而具有潛在的 透明性問題。 【發明内容】 本發明之目的係在解決上述問題，其係藉由提供一種 鲁可以便宜製造光電積體電路裝置之方法來達成，其中該光 電積體電路裝置的產品品質在透明度上具有一致性，且該 等光電積體電路裝置可使用於諸如藍光雷射之短波長。 依照本發明之光電積體電路裝置的製造方法係包 括：在半導體晶圓上形成複數個光電積體電路之步驟；在 該半導體晶圓上形成薄金屬膜圖案而將該薄金屬電性連接 至該半導體晶圓之步驟；將包含有活動離子之玻璃板定位 使之面向該半導體晶圓的步驟；將該玻璃板置於該薄金屬 膜圖案上且藉由施加電壓於該半導體晶圓及該玻璃板之間 318333 7 1313046 璃板與該薄金屬膜圖案的步驟;以及以該 各勺人之。P分留在對應於該先電積體電路之位置’而獲得 個該光電積體電路之光電積體電路裝置之方式切 該+導體晶圓之步驟。 上述薄金屬膜圖案形成步驟可包括在該薄金屬膜圖 f形成之前部分地移除位在該半導體晶圓上之保護膜的步 該玻璃板可具耐熱性。該玻璃板可具有突出於其他區 °、的且刀別對應於各該等光電積體電路之區域。 .【實施方式】 本發明之實施例將在下文中參考附圖來予以說明。 、如第1圖所示，依照一種光電積體電路裝置之製造方 法，構成光電積體電路之元件，諸如光接收元件或發光元 件，以及電子迴路等，係先形成在半導體晶圓之半導體基 板的頂面上。在晶圓製程步驟S1中，該晶圓係由矽或 鲁相似物所製成。這些元件係利用習知的製程所形成，例如， 微影術、離子植入等。在該半導體基板上包含此等元件之 £域在下文中係稱之為光活化（ph〇t〇active)部分14 ’其後 續係由玻璃板予以密閉式密封，此將在下文中說明。如第 2A圖所示，半導體晶圓之部分截面圖係顯示兩個形成 在半導體基板11上之光活化部分14。在該半導體基板” 上係進一步提供低阻抗佈線圖案（未圖示），且其從該光活 化部分14延伸至提供有接合墊（未圖示）之區域。 接下來，在與該晶圓製程步驟S1同步進行之玻璃板 8 318333 •1313046 製矛王步驟S2中’適於將在下文中說明之陽極接合之形狀 的玻璃板係利用習知製程而形成。在本發明中，該玻璃板 係與在晶圓平台中形成在該半導體晶圓上之金屬薄膜陽極 接合，然後該晶圓被分割成半導體晶片。因此，最好該玻 璃板與該半導體晶圓相對之面的形狀形成與該半導體晶圓 大致相同的形狀。該玻璃板的厚度係取決於例如強度、加 工性等因素所決定，大約為500微米（从m)。 由於諸如Na+之活動離子有助於陽極接合，因此在本 • ^施例中係採用包含此等活動離子之玻璃板。再者，由於 一陽極接合係在高溫下來進行，因此最好所使用之玻璃具有 類似於該晶圓之熱膨脹係數，以避免在陽極接合之後冷卻 至室溫時會產生殘留應力。為了滿足上述的條件，例如， 最好選用諸如Pyrex(註冊商標名）玻璃。 第10圖顯示在第3圖中所示之玻璃板2〇的部分，其 具有面部朝上之接合侧面。如此圖式所示，四個各具有立 _方體形狀之凸部22在預定的區域中突出。這些區域對應於 該光電積體電路之光活化部分14。此凸部22係藉由例如 喷砂而形成具有大約50至1〇〇微米的高度。在該等凸部 22以外之區域中的玻璃板厚度係藉由喷砂而製成較薄，且 在後續的切割步驟S4中會變得較易於切割該玻璃板。應 注意，該等凸部22可設置在相反於該玻璃板2〇之接合侧 的侧面上’或者，可以不要在該玻璃板2〇上提供任何凸部 22。然而’最好能在該玻璃板2〇之接合侧面上形成該等凸 部22，如第3圖所示’因為在陽極接合之後，在該晶圓與 9 318333 .1313046 該玻璃板之間會形成凹腔（cavity)31，如第4圖所示。該等 凹腔31在Μ下將說明之切割步驟S4中可增進該玻璃板在 切割製程期間的加工性。應注意，提供此等凸部Μ需要在 陽極接合之前將該玻璃板2〇與該半導體晶圓對準。而 因此，最好在該玻璃板上形成對準記號，諸如缺口， 以有助於此對準。 在該晶圓製程步驟S1中所製備之半導體晶圓及在該 玻璃板製程步驟S2中所製備的玻璃板接著被傳送至接合 步驟S3 ’如第】圖所示。該接合步驟S3包含步驟咖， 其中金屬薄膜形成在該半導體晶圓上，且包含步驟S3b， 其中在該半導體晶圓上之金屬薄膜係與該玻璃板陽極接 f先將說明該金屬薄膜形成步驟S3a。第2入至2F丨 =該Βγΐ H)之部分截面圖，其中顯示該金屬薄膜形成步· 二圖顯示在該金屬薄膜形成之前之該晶圓10的 Μ截面圖。在第2Β圖中，在包括該光活化部分14及售 佈線圖案（未圖示）之主道μ ……形成具有例如1微米』 度的保_ 12。該保護膜12係利用㈣㈣ 積）而形成，《覆蓋於其上形成有該光活化部分14=圓 石夕（si〇2)。 K說該㈣膜12之材料可以為二氧七 夺面的方：κ如第2C圖所不’穿孔15在垂直於該晶圓之 上貫穿該保護膜12而形成，以提供在該 膜及該半導體基板u之間的電性連接。該等穿孔15係= 318333 10 1313046 美』^微衫及蝕刻而形成。由於佈線圖案形成在該半導體 11上，因此該f穿孔15會散佈而不會與該佈線圖案 :接觸。、應注意’該等穿孔15之數量以及每一穿孔15的 品+或係經測疋而使得在陽極接合期間可施加適當的電 '至該薄金屬膜13。用於以下將說明之線接合之接合墊(未 厂、）的穿孔亦可在此微影及蝕刻製程期間來予以形成。 接下來，如第2D圖所示，薄金屬膜Η係藉由汽相沉 方法而形成在該晶圓之整個表面上，以覆蓋該保護膜 該薄金屬膜13之厚度可以為1000埃或以上。在此同 粗〜金屬係埋设在該等穿孔15 _。該薄金屬膜13之材 二’、依=、、該破璃板與該金屬之間的接合強度、影響陽極接 材料的比阻抗（speeifie 繼）、對該保護膜的附著 …該薄金屬膜之加讀等因素來予以選擇。舉例來說， S於金屬薄膜13之典型的材料係Ti(鈦）。由於該薄金屬板 之上表面係藉由以下描述的陽極接合而與該玻璃板2〇 ，合’、因，最好該薄金屬们3之表面係利用習知整平方法 ^予：整平。接下來’如第2E圖所示，該薄金屬膜之部 :係藉由例如微影及㈣方法來予以選擇性移除，使得該 光活化部分14之周圍可被陽極接合以達到密閉式密封。形 2在該等光活化部分之周圍中的薄金屬膜13之寬度係依 、、、5 =金屬膜13與該玻璃板之間的接合強度、對該保護膜 之附著性等因素來予以決定。該薄金屬膜13之典型寬声係 至少200微米。 X” 最後，如第2F圖所示’形成在光接收表面上之保護 318333 11 1313046 拉由例如微影及侧來予以移除，以將事先形成之光 面曝露出來。應注意’為了避免該光接收元件在針 :保護膜之_期間独刻，用以作為_阻止層之薄 :(未圖示)可利用習知的方法在形成該保護膜12之前僅形 、該等光活化部分上。在此例中，在該保護膜之钱刻之 傻，需要用以移除該蝕刻阻止層的額外步驟。 、用於陽極接合之薄金屬膜13係經由在該薄金屬膜形-, 131.3046 IX. Description of the invention: [Technical field to which the invention pertains] The invention relates to an optoelectronic integrated circuit by using anodic bonding (manufacturing method of the 〇 装置 device, and in detail, regarding a specific type The manufacturing method of the optoelectronic integrated circuit is disposed, wherein the upper side of the photo-activated portion is hermetically sealed by anodic bonding with a glazing. [Prior Art] In order to utilize a red laser or an infrared laser, a seal is applied to The well-known optoelectronic integrated circuit of Shen Qing (digital audio CD) or (3) (disc) is cracked, and the epoxy resin is used. The resin not only provides transparent features, but also provides excellent characteristics, such as moldability. Plasticity, anti-fishing and low cost. However, 'this epoxy sealing resin has a problem, that is, when it is irradiated by a blue laser for lower-generation, fVD, it will be due to the nature of blue laser The yellowing of energy causes loss of light transmission. Therefore, the conventional epoxy resin cannot be used in the lulight irradiation portion of the optoelectronic integrated circuit device irradiated by the blue laser. The problem described, for example, has been proposed in a closed type of escaping method in which the transparent glass plate wafer is bonded to the light receiving surface of the optoelectronic integrated circuit device in Japanese Patent Laid-Open No. (10) VII. The light receiving surface can be illuminated by blue light. In the method, the light receiving surface of the integrated circuit is bonded to the glass plate wafer by a transparent adhesive. In order to reliably perform the bonding in this way, It is necessary to align each of the glass wafers to each of the semiconductor wafers after the dicer round cutting process. Thereafter, the glass wafer is bonded to 318333 6 '131.3046 using a transparent adhesive to the semiconductor wafer. The region is encapsulated by a conventional method using a % oxygen resin. With this configuration, it is possible to eliminate the transparent f-gate pass due to degradation of the epoxy tree due to exposure to the essential energy of the blue laser. The above problem also occurs in a blue light-emitting element that is packaged in a similar manner. The glass plate wafer is bonded to a light source such as by using a transparent adhesive. The light-receiving surface of the f-body circuit device or the light-transmitting surface of the light-emitting surface is as described above. The glass plate is prepared by cutting the glass plate, and the semiconductor wafer is also prepared by cutting the wafer. This will require a lot of process steps and will cause variations in the quality of the final product. Furthermore, since this method uses transparent adhesive to bond the semiconductor wafer to the glass wafer, the final product will still be degraded by this adhesive. SUMMARY OF THE INVENTION The object of the present invention is to solve the above problems by providing a method in which an optoelectronic integrated circuit device can be manufactured inexpensively, wherein the optoelectronic integrated circuit device The product quality is uniform in transparency, and the optoelectronic integrated circuit device can be used for short wavelengths such as blue laser light. The manufacturing method of the optoelectronic integrated circuit device according to the present invention includes: forming a plurality of numbers on a semiconductor wafer a step of an optoelectronic integrated circuit; forming a thin metal film pattern on the semiconductor wafer to electrically connect the thin metal a step of the semiconductor wafer; positioning a glass plate containing the movable ions to face the semiconductor wafer; placing the glass plate on the thin metal film pattern and applying a voltage to the semiconductor wafer and The glass plate is between 318333 7 1313046 glass plate with the step of the thin metal film pattern; and with the respective scoops. The step of cutting the +conductor wafer in such a manner that P is left at a position corresponding to the position of the precursor circuit to obtain an optoelectronic integrated circuit device of the optoelectronic integrated circuit. The thin metal film pattern forming step may include a step of partially removing the protective film on the semiconductor wafer before the thin metal film pattern f is formed. The glass plate may have heat resistance. The glass sheet may have regions that protrude from other regions and that correspond to the respective optoelectronic integrated circuits. [Embodiment] An embodiment of the present invention will be described below with reference to the drawings. As shown in FIG. 1, according to a method of manufacturing an optoelectronic integrated circuit device, an element constituting an optoelectronic integrated circuit, such as a light receiving element or a light emitting element, and an electronic circuit, etc., are first formed on a semiconductor substrate of a semiconductor wafer. On the top. In the wafer process step S1, the wafer is made of tantalum or a similar substance. These components are formed using conventional processes such as lithography, ion implantation, and the like. The domain containing such elements on the semiconductor substrate is hereinafter referred to as a photoactivated portion 14' which is hermetically sealed by a glass sheet, as will be explained hereinafter. As shown in Fig. 2A, a partial cross-sectional view of the semiconductor wafer shows two photoactive portions 14 formed on the semiconductor substrate 11. Further, a low-resistance wiring pattern (not shown) is provided on the semiconductor substrate, and it extends from the photo-activated portion 14 to a region where a bonding pad (not shown) is provided. Next, in the wafer process Step S1 Synchronously performed glass plate 8 318333 • 1313046 In the step S2, a glass plate suitable for the shape of the anodic bonding described below is formed by a known process. In the present invention, the glass plate is A metal film formed on the semiconductor wafer is anodically bonded in the wafer platform, and then the wafer is divided into semiconductor wafers. Therefore, it is preferable that a shape of the glass plate opposite to the semiconductor wafer is formed and the semiconductor crystal The shape of the glass is approximately the same. The thickness of the glass plate is determined by factors such as strength, workability, etc., and is about 500 μm (from m). Since active ions such as Na+ contribute to anodic bonding, in this • In the example, a glass plate containing such active ions is used. Furthermore, since an anodic bonding system is carried out at a high temperature, it is preferable to use a glass similar to that. The coefficient of thermal expansion of the wafer is such as to avoid residual stress when cooled to room temperature after anodic bonding. In order to satisfy the above conditions, for example, a glass such as Pyrex (registered trade name) is preferably used. Fig. 10 is shown in the third The portion of the glass sheet 2 shown in the figure has the face-side engaging side. As shown in the drawing, four convex portions 22 each having a vertical-square shape protrude in a predetermined region. In the photo-activated portion 14 of the optoelectronic integrated circuit, the convex portion 22 is formed to have a height of about 50 to 1 μm by, for example, sand blasting. The thickness of the glass plate in the region other than the convex portions 22 is Made thin by sandblasting, and it becomes easier to cut the glass sheet in the subsequent cutting step S4. It should be noted that the convex portions 22 may be disposed opposite to the joint side of the glass sheet 2〇. On the side 'or, it is not necessary to provide any convex portion 22 on the glass plate 2〇. However, it is preferable to form the convex portions 22 on the joint side of the glass plate 2〇, as shown in Fig. 3 After anodic bonding, on the wafer 9 318333 .1313046 A cavity 31 is formed between the glass sheets, as shown in Fig. 4. The cavities 31 can enhance the glass sheet during the cutting process in the cutting step S4, which will be described below. Processability. It should be noted that the provision of such protrusions requires alignment of the glass sheet 2〇 with the semiconductor wafer prior to anodic bonding. Therefore, it is preferred to form alignment marks, such as gaps, on the glass sheet. This alignment is facilitated. The semiconductor wafer prepared in the wafer process step S1 and the glass plate prepared in the glass plate process step S2 are then transferred to the bonding step S3' as shown in the figure. The bonding step S3 includes a step of forming a metal film on the semiconductor wafer, and comprising the step S3b, wherein the metal film on the semiconductor wafer is connected to the glass plate, and the metal film forming step will be described first. S3a. A partial cross-sectional view of the second entry to 2F 丨 = the Β γ ΐ H), wherein the metal thin film formation step is shown in Fig. 2 to show a cross-sectional view of the wafer 10 before the formation of the metal thin film. In the second drawing, the main track μ including the photo-activated portion 14 and the wiring pattern (not shown) is formed to have a -12 degree of, for example, 1 μm. The protective film 12 is formed by (4) (four) product, and the photo-activated portion 14 = si〇2 is formed thereon. K said that the material of the (four) film 12 may be a surface of the dioxos: κ, as shown in FIG. 2C, the perforation 15 is formed through the protective film 12 perpendicular to the wafer to provide the film and Electrical connection between the semiconductor substrates u. These perforations 15 are = 318333 10 1313046 US 』 ^ micro-shirts and etching formed. Since the wiring pattern is formed on the semiconductor 11, the f-perforation 15 is spread without coming into contact with the wiring pattern. It should be noted that the number of such perforations 15 and the perforation 15 of each perforation 15 are such that a suitable electrical energy can be applied to the thin metal film 13 during anodic bonding. The perforations of the bonding pads (not factory) used for the wire bonding described below can also be formed during this lithography and etching process. Next, as shown in FIG. 2D, a thin metal film is formed on the entire surface of the wafer by a vapor phase deposition method to cover the protective film. The thickness of the thin metal film 13 may be 1000 angstroms or more. . Here, the same coarse-metal system is buried in the perforations 15 _. The material of the thin metal film 13 is '', the bonding strength between the glass plate and the metal, the specific impedance of the anode material, and the adhesion to the protective film. The thin metal film Add reading and other factors to choose. For example, a typical material of S in the metal thin film 13 is Ti (titanium). Since the upper surface of the thin metal plate is bonded to the glass plate by the anodic bonding described below, it is preferable that the surface of the thin metal 3 is subjected to a conventional leveling method: . Next, as shown in FIG. 2E, the thin metal film portion is selectively removed by, for example, lithography and (4), so that the periphery of the photoactive portion 14 can be anodically bonded to achieve a hermetic seal. . The width of the thin metal film 13 in the periphery of the photo-activated portion is determined by factors such as the bonding strength between the metal film 13 and the glass plate, adhesion to the protective film, and the like. . The thin metal film 13 typically has a wide acoustic system of at least 200 microns. X" Finally, as shown in Fig. 2F, the protection formed on the light receiving surface 318333 11 1313046 is removed by, for example, lithography and side to expose the previously formed smooth surface. It should be noted that 'to avoid this The light-receiving element is uniquely used during the period of the needle: protective film as a thin layer of the _stop layer: (not shown) can be formed on the photo-activated portion only before the formation of the protective film 12 by a conventional method. In this case, the money of the protective film is stupid, and an additional step for removing the etch stop layer is required. The thin metal film 13 for anodic bonding is via the thin metal film shape.
成步驟S3a中所示之系列製程而形成。應注意，該薄金屬 膜13之形成步驟並未侷限於上述實施例，亦可包括i他 製程。 八 、接下來，在該陽極接合步驟S3b中，該玻璃板係與形 成在該半導體晶圓上之薄金屬膜13予以陽極接合在一 起。第3圖之部分截面圖係顯示該晶圓1〇及該玻璃板2〇 在陽極接合之前的形狀。如上述，該陽極接合係將包含有 活動離子之玻璃與該金屬在高溫及高電壓作用下穩定地接 籲5在起。舉例來說，適當的接合條件係詳述在g.Wallis 及D.I.Pomerants所著之應用物理期刊第4〇卷（1969)第 3946至3949頁中，其内容在此併入援引為本案之參考。 在本實施例中，如第9圖所示，該半導體晶圓丨〇及 該玻璃板20係彼此對準且安裝在陽極接合裝置丨上。該半 導體晶圓10及玻璃板20係分別電性連接至電極夾具(jig)2 及3。該電極夾具2及3連接至電源5,使得該玻璃板位在 陰極侧且該晶圓位在陽極側。加熱器4係設置在該晶圓1〇 附近。該加熱器4以360至4〇〇。(：之溫度加熱該玻璃板及 12 318333 .1313046 該晶圓，且以600至ΐοοον之電壓施加於該玻璃板加與 該晶圓〗0之間，以觸發該陽極接合。在該陽極接合期間、， 該玻璃板係藉由該加熱器4所供應之熱而軟化，因此包3括’ 在該玻璃板t之諸如的鹼離子會朝向該電極夾且^ 動。由於電㈣經由該半導體基板U而供應至該薄金屬膜 13,因此包括在該薄金屬膜13中的自由電子亦會朝向該電 極夹具2移動。因此，分別留在玻璃板及該薄金屬膜^ 中而位在接合侧面或接觸表面附近的〇_離子及金屬陽離 I子會產生很大的靜電力而彼此相吸引。這會在該接觸表面 產生化學接合，藉此將該玻璃板20接合至該薄金屬膜 當經過駭時間後，該陽極接合便會完成，然後接合至該 玻璃板之晶圓會被空氣冷卻至室溫，且仍保持夹置在該等 電極夹具2及3之間14圖係在陽極接合之後接合^該 玻璃板之晶圓30的部分截面圖。 下來’如第1圖所示，接合至該破璃板之晶圓30 被傳送至該切割步驟S4，且在該處分割成半導體晶月。在 切割步驟S4中，首先，如裳$ ",… 第5圖所不，定位在該等晶圓 刀告⑷刀上方之該等玻璃片23係經由沿著切割部分以刀 割，從該玻璃板20被移除。因此，僅有該等密封玻璃板 24被留在該半導體晶圓之光活化部分上。在此實例中，以 明之用於線接合及樹脂封包的空間係提供在該等光 著St:。接下來’如第6圖所示，該半導體晶圓沿 者〜專曰曰囫刀』部分33而被分割成半導體晶片4〇。 在切割步驟S4之後，便可藉由—般製程來獲得最終 318333 13 1313046 = 所示之步驟…9。第7圖係藉 50之巫心 系列製造步驟所獲得之光電積體電路裝置 圖。第8圖係沿著第7圖之虛線所 圖 在第1圖中之牛跟。， 丨取的戴面圖。 圖中之步驟84至別將在下文中簡要說明 ， 在日曰粒接合步驟S5中，該半導體晶片扣安 =製成的基板51上。然後，在線接合步d: 心:半導體晶片4G上的接合塾55及該等導線52係與由 2所製成之接線53相連接。接下來，在模塑步驟S7 ，除了由該玻璃板所密封之部分以外的空間係藉由例如 環氧樹脂所製成之樹月旨54來予以密封，以形成封裝的半導 體晶片。接著，在標記步驟S8中，在該已封裝的半導體 曰曰片上印製批號等。最後，在最後的檢查步驟％中檢查 已封裝的半導體晶片，以獲得作為最終產品的光電積體電 路裝置。 ' 如上述，依照本發明之實施例，該玻璃板係精確地與 該晶圓相對準，且將該玻璃板與該晶圓在晶圓平台上彼此 接合在一起。因此，相較於其中該玻璃板在接合至該晶圓 之刖被分割成小玻璃板晶片之製造程序而言，本發明可製 造出更具一致性的光電積體電路裝置。再者，由於僅有該 光活化部分之上側面係在晶圓平台上由該玻璃板所密封， 因此在此密封步驟之後，可以使用既有的半導體組件及生 產設備。 因此’便可以便宜地製造出具有一致透明性的光電積 體電路裝置，且可適用於由藍光雷射所產生之短波長的光 14 318333 * 1313046 線。 本申請案係基於曰本專利申請案第2〇〇5_2471S6號， 該案之内容在此援5丨為本案之參考。 【圖式簡單說明】 第1圖係顯示包括依照本發明之實施例之製造方法之 光電積體電路裝置的整體製造方法之概要方塊圖； 第2A至2F圖係顯示依照本發明之實施例之薄金屬膜 的形成步驟之部分截面圖； 费 帛3 ®係在本發明之實施例之陽極接合前之半導體晶 ,圓及玻璃板之部分截面圖； 第4圖係在本發明之實施例之陽極接合後之半導體晶 圓及玻璃板之部分截面圖； 第5圖係半導體晶圓之部分截面圖，其中在第4圖中 所示之玻璃板之部分係在本發明之實施例之切割步驟中藉 由移除其他部分而被留在光活化區域上的位置； _ 第6圖係該半導體晶圓之部分截面圖，其中在第$圖 中所不之晶圓係藉由本發明之實施例的切割步驟而被分割 成半導體晶片； 第7圖係作為藉由本發明實施例所製成之最終產品的 光電積體電路裝置之平面圖； 第8圖係沿第7圖所示之虛線所取之光電積體電路裝 置的截面圖； 第9圖係用於依照本發明之實施例之陽極接合之裝置 的概要示意圖；以及 318333 15 1313046 第ίο圖係依照本發明之實施例之具有凸部之玻璃板 的部分立體圖。 【主要元件符號說明】 1 陽極接合裝置 2 電極夾具 3 電極夾具 4 加熱器 5 電源 _ 10 半導體晶圓 11 半導體基板 12 保護膜 13 薄金屬膜 14 光活化部分 15 穿孔 20 玻璃板 22 凸部 W 23 玻璃片 24 密封玻璃板 30 晶圓 31 凹腔 32 切割部分 33 晶圓切割部分 40 半導體晶片 50 光電積體電路裝置 16 318333 1313046 ^ 51 基板 52 導線 53 接線 54 樹脂 55 接合墊 S1 至 S9 步驟Formed in the series of processes shown in step S3a. It should be noted that the step of forming the thin metal film 13 is not limited to the above embodiment, and may include an i process. 8. Next, in the anodic bonding step S3b, the glass plate is anodically bonded to the thin metal film 13 formed on the semiconductor wafer. A partial cross-sectional view of Fig. 3 shows the shape of the wafer 1〇 and the glass sheet 2〇 prior to anodic bonding. As described above, the anodic bonding system stably contacts the glass containing the movable ions with the metal under the action of high temperature and high voltage. For example, suitable joining conditions are detailed in G. Wallis and D. I. Pomerants, Applied Physics, Vol. 4 (1969), pages 3946 to 3949, the contents of which are incorporated herein by reference. In the present embodiment, as shown in Fig. 9, the semiconductor wafer cassette and the glass sheet 20 are aligned with each other and mounted on the anodic bonding apparatus. The semiconductor wafer 10 and the glass plate 20 are electrically connected to electrode jigs 2 and 3, respectively. The electrode holders 2 and 3 are connected to the power source 5 such that the glass plate is on the cathode side and the wafer is on the anode side. The heater 4 is disposed near the wafer 1〇. The heater 4 is 360 to 4 inches. (The temperature is heated by the glass plate and 12 318333 .1313046 of the wafer, and a voltage of 600 to ΐοοον is applied between the glass plate and the wafer to trigger the anodic bonding. During the anodic bonding The glass plate is softened by the heat supplied by the heater 4, so that the alkali ions such as in the glass plate t are directed toward the electrode and moved. Since the electricity (four) passes through the semiconductor substrate U is supplied to the thin metal film 13, so that free electrons included in the thin metal film 13 are also moved toward the electrode holder 2. Therefore, they are left in the glass plate and the thin metal film, respectively, on the joint side. Or the 〇-ion and the metal cation I in the vicinity of the contact surface generate a large electrostatic force to attract each other. This causes a chemical bond at the contact surface, thereby bonding the glass plate 20 to the thin metal film. After the 骇 time, the anodic bonding is completed, and then the wafer bonded to the glass plate is cooled to room temperature by air, and remains sandwiched between the electrode holders 2 and 3. Bonding ^ the glass plate A partial cross-sectional view of the wafer 30. As shown in Fig. 1, the wafer 30 bonded to the glass plate is transferred to the cutting step S4 where it is divided into semiconductor crystals. In the cutting step S4 First, as in the case of $ ",... Figure 5, the glass sheets 23 positioned above the wafer cutters (4) are cut from the cutting portion and moved from the glass sheet 20 Therefore, only the sealed glass sheets 24 are left on the photo-activated portions of the semiconductor wafer. In this example, the space for the wire bonding and the resin encapsulation is provided in the light St: Next, as shown in FIG. 6, the semiconductor wafer edge-to-side knives portion 33 is divided into semiconductor wafers 4. After the cutting step S4, it can be obtained by a general process. Finally 318333 13 1313046 = the steps shown...9. Figure 7 is a diagram of the optoelectronic integrated circuit device obtained by the manufacturing process of the Wuzhi series of the 50. Figure 8 is the first line along the dotted line of Figure 7. The cow's heel in the picture., the worn face map. Step 84 in the picture will not be simplified below. In the day-to-day bonding step S5, the semiconductor wafer is mounted on the substrate 51. Then, the bonding step d: the core: the bonding pad 55 on the semiconductor wafer 4G and the wires 52 are connected by 2 The resulting wires 53 are connected. Next, in the molding step S7, the space other than the portion sealed by the glass plate is sealed by a tree, for example, made of epoxy resin, to Forming a packaged semiconductor wafer. Next, in the marking step S8, a lot number or the like is printed on the packaged semiconductor wafer. Finally, the packaged semiconductor wafer is inspected in the last inspection step % to obtain the final product. Optoelectronic integrated circuit device. As described above, in accordance with an embodiment of the present invention, the glass sheet is accurately aligned with the wafer and the glass sheet and the wafer are bonded to each other on a wafer platform. Therefore, the present invention can produce a more uniform optoelectronic integrated circuit device than the manufacturing process in which the glass sheet is divided into small glass plate wafers after bonding to the wafer. Furthermore, since only the upper side of the photo-activated portion is sealed by the glass plate on the wafer platform, the existing semiconductor component and the production equipment can be used after the sealing step. Therefore, it is possible to inexpensively manufacture an optoelectronic integrated circuit device having uniform transparency, and is applicable to a short-wavelength light 14 318333 * 1313046 line produced by a blue laser. This application is based on the second patent application No. 2〇〇5_2471S6, the content of which is hereby referred to as a reference for this case. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic block diagram showing an overall manufacturing method of a photovoltaic integrated circuit device including a manufacturing method according to an embodiment of the present invention; FIGS. 2A to 2F are diagrams showing an embodiment according to the present invention. A partial cross-sectional view of a step of forming a thin metal film; a partial cross-sectional view of a semiconductor crystal, a circle, and a glass plate before anodic bonding of an embodiment of the present invention; and FIG. 4 is an embodiment of the present invention. A partial cross-sectional view of the semiconductor wafer and the glass plate after anodic bonding; FIG. 5 is a partial cross-sectional view of the semiconductor wafer, wherein the portion of the glass plate shown in FIG. 4 is in the cutting step of the embodiment of the present invention a portion that is left on the photo-activated region by removing other portions; _ Figure 6 is a partial cross-sectional view of the semiconductor wafer, wherein the wafer in the Figure is by way of an embodiment of the present invention The cutting step is divided into semiconductor wafers; FIG. 7 is a plan view of the optoelectronic integrated circuit device as a final product produced by the embodiment of the present invention; FIG. 8 is taken along the dotted line shown in FIG. A cross-sectional view of an optoelectronic integrated circuit device; FIG. 9 is a schematic view of an apparatus for anodic bonding according to an embodiment of the present invention; and 318333 15 1313046. FIG. 9 is a glass having a convex portion according to an embodiment of the present invention. Partial perspective view of the board. [Description of main components] 1 anodic bonding device 2 electrode holder 3 electrode holder 4 heater 5 power supply _ 10 semiconductor wafer 11 semiconductor substrate 12 protective film 13 thin metal film 14 photoactive portion 15 perforation 20 glass plate 22 convex portion W 23 Glass sheet 24 Sealed glass plate 30 Wafer 31 Cavity 32 Cutting portion 33 Wafer cutting portion 40 Semiconductor wafer 50 Optoelectronic integrated circuit device 16 318333 1313046 ^ 51 Substrate 52 Wire 53 Wiring 54 Resin 55 Bonding pads S1 to S9 Steps
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