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TWI310938B - Data storage device - Google Patents

Data storage device Download PDF

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Publication number
TWI310938B
TWI310938B TW92105590A TW92105590A TWI310938B TW I310938 B TWI310938 B TW I310938B TW 92105590 A TW92105590 A TW 92105590A TW 92105590 A TW92105590 A TW 92105590A TW I310938 B TWI310938 B TW I310938B
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TW
Taiwan
Prior art keywords
magnetic
storage device
data
data storage
magnetic field
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Application number
TW92105590A
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Chinese (zh)
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TW200306536A (en
Inventor
Russell Paul Cowburn
Original Assignee
Eastgate Invest Ltd
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0816Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70Resistive array aspects
    • G11C2213/81Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
  • Hall/Mr Elements (AREA)
  • Memory System Of A Hierarchy Structure (AREA)

Description

1310938 玖、發明說明: 【發明所屬之技術領域】 本發明係關於-種用以儲存數位資訊(例如電腦樓案、 數位音樂以及數位視訊等)的資料儲存裴置。明確地說, 發明係關於能夠無限次地寫入資料 u朽八貝枓及讀回資料的資料儲存 裝置。 【先前技術】 :年來已經有非常多的資料儲存裝置採用各種 數位資料儲存的應用。資料儲存裝置經過設計之 ;可:應於各種的操作特徵,該等特徵包括容量、存取速 存在或不存蝴、尺寸=穩==_力(於電力 儲存體括磁帶儲存體、磁^ 存容量及非常快的資 儲存體皆可提供極佳的儲 快速寫入與覆寫應用中。而且皆可適應於資料的 此-來便限=;=式讀取頭或光學式讀取頭。如 程度,並且二=存介f之裝置進行微型化的 在任何的储存=置在高振動環境下的實用性。雖然 ,_採用的儲存機: = = = 斗儲存的關鍵所在 基板進行精密控制的特性。因此、備有可以對任何支撲 控制的構造。再去 此等裝置必須具備精密 裝置的表面,如等儲存體皆要求該讀取頭去存取該 便限制了該裳置的設計自由度。 1310938 【發明内容】 本發明的一項目的係 種用“係^供一種可於任何環境中提供各 用途的可替換的數位資料儲存裝 可微型化丨及/或可偁平妁术忒尤其疋 及貼Η十4 其它裝置(例如智慧卡、識別標籤 τm f,及/或可併入軟性基板;及/哎 可使用於高振動環境中.月及ιχ 造成本等。 ,及/或間早的製造方式及便宜的製 存數t發4月的項特殊目的係提供—種可精簡且有效地儲 次杜p 冑㈣存裝置,讀能夠㈣無限心也寫入 貝枓及言買回資料。 因亡;根據本發明,其提供一種以可讀取的形式來儲 資料健^ L 數位音樂以及數位視訊等)的 ,:子、,其包括一個以上的(明確地說應該是複數個 )記憶體元件,每個記憶體元件皆包括一平面磁導管,該平 :磁導管能夠維持且傳導磁切,該平面磁導管形成一連 專導執其中每條連續軌皆具備至少一個反轉節點,選 :〖生地可有複數個反轉節點’且特別地可有非常多個反轉 2點1於適當的外加磁場作用下’沿著該導管傳導的磁嘴 ,之磁化方向會在該等反轉節點處改變方向,明確地說, 實質上其磁化方向係被反轉。 条導&都係被形成於—條連續的傳導軌之中。慣例 上條導管係形成一封閉迴路,以包括此連續的傳導軌 ° 2迴至少—個反轉節點,選擇性地可有複數個反 轉即點且特別地可有非常多個反轉節點。根據下面概述 1310938 的機制方式,便可於該封閉迴路中來遞送資料。有些時候 ,°亥條磁導管並不會構成由多個反轉節點所組成的整個封 閉迴路;而是由多個反轉節點所組成的直線鏈路,且具有 於兩個端點之間傳送資料之構件,因此資料仍然能夠繞著 看=封閉的迴路而循環,舉例來說,該鍵路其中一端包括 貝料寫人設備;該鏈路的另—端包括—f料讀取設備. ::包括-額外的電路’以電子方式從該鏈路的將 資枓回饋至該鏈路的輸入端。 肝 等反轉節點包括該導管的結構及形狀的特 = 過調適之後,於適#的外加磁場作用下⑼如方向 的磁場’明碟地說係循環變化的磁場),磁域傳導的 向便會發生改變’較佳的係會在磁化方向中產生實 夤反轉的變化。 然而有必要做到,導瞢太a & i t .,_ J令^万向與磁疇壁傳導方向發生變 ’同時在任何位置點都不會 賞&成明顯的不連續現象。因 此’於該反轉節點區域中或包含 3 3亥反轉節點的區域中的結 構特徵必須能夠在不必於傳導 蠻化丁 / 料方向中產生任何明顯的劇烈 I化下,促使磁域傳導的 磁“ 方向發生變化,最好係會在 磁化方向中產生實質反轉的變化。 於較佳的實施例中,反轉節 A, ^ 卽點包括於該反轉節點所發 生的貫貝磁化方向反轉。較佳 r ., 权佳的係,於該條導管中具備的 轉卽點包括一部份,於該部 间 ^ ^ 切中方向會與原來的路徑不 ’而後方向又會改變回到原凌 ^ ^ ^ 、采的路徑中’因此於該偏離 伤中並不會有直接的傳導 子塔僅。明確地說,偏離包括 1310938 ::二的路輕產生90。的偏離。基於上述的理由 所發生的偏離較佳的係沿著著原來 逐漸發生偏離。 子&軏隨著距離 舉例來說’該反轉節點於 線部1確地說其;⑺構中包括-擺 構。 ^朝内,或是與此結構等效的拓樸結 較佳的係,每個迴路中皆 此根據本發明之裝置 :数個此種擺線部。因 的磁性導f,每條磁性 中 俜用d Α ^ Β身包括複數個擺線,該等擺線 ^以急劇的方式於通過其上的料壁的磁化方向中= 可二:的當該等磁嘴壁沿著本發明的導管進行傳導時, ?田的驅動磁場作用下以該等擺線作為反轉點。 較佳的係,每個擺線皆具有一轉向半徑’其半 該導管寬度的三倍至十伴之門 '; 該等擺線時,胃等#線:二 S磁疇壁通過 X等擺線便可對其磁化方向造成實質的改變 ,例如,180。的反轉。 根據本發明,在控制磁場的作用下,該磁性導管的加 構必須能夠維持且傳導—料壁。—般來說,該磁性導管 都係由連續的磁性材料連續軌所組成的。因此,根據本發 之裝置内的迴路較佳的係包括磁性線路,明確地說, 般都是位於㈣基板之上的平面磁性線路。 — =此,該資料儲存裝置會使用到數條的平面磁性導管( 特別是磁I·生線路)’其形狀較佳的係由擺線所組成的封閉迴 路月確地5兒,本發明採用的係磁奈米級的技術,本裝置 1310938 包含數條平面的磁性奈米線路等 成 卞線路較佳的係形 成;由擺線所組成的複數個封閉迴路之中。 "6亥等平面的磁性奈米線路的寬度較佳的係小於^瓜, 並且係形成於任何適用的基板之上。 綠玖+壯 土杈及上就知用細窄的奈米級 紗^ Γ置而t,該等奈米線路的寬度必須在該等裝置的 ?子谷1與製造成本及複雜度之間作取捨。然、而,如果該 裝置所採用的線路超過丨微米的話,便非常不實用;對目< :的線路製作技術而言’ 5〇麵可能是能夠達到省錢目的的 貫際下限。應該特別強調的係,技術實務上並無任何的限 制’經過改良的製作技術將可進—步地微型化採用 的裝置。 該等線路會被放置在由磁形材料薄層所構成的基板之 ^。線路的厚度必須經過最佳化,以達到該裝置最佳的效 月匕,而且厚度大體上係寬度之函數。明確地說,線路厚度 一般都係線路寬度的四十分之一。線路厚度通常都不小於 2nm,較佳的係不小於3nm。實務上,線路厚度不可能大 於 25nm。 該等線路可利用光學微影蝕刻技術、χ射線微影蝕刻 技術、微接觸印刷技術、電子束微影蝕刻技術、陰影光罩 沉積技術或任何其它適當的方法來進行製作。該等線路係 由磁性材料所構成,例如透磁合金,或c〇Fe,或 任何其它軟性磁性材料。 採用上述反轉節點的資料儲存裝置必須外加方向會變 化的合宜磁場(明確地說應該係循環變化的磁場),下面將 1310938 會更"羊細地說明施加該磁場的作業方式,該等作業方式可 讓°亥反轉節點具有記憶的功能。提供複數個各採用一個以' 上反轉節點的迴路陣列便可讓本發明的資料儲存裝置以環· 狀的方式依序地儲存資料。 可以無限次地將資料寫入本發明的裝置中並且無限次 地將該資料讀回。與磁帶儲存體或磁式硬碟儲存體不同的 係,本發明不並使用到移動部件。因此,本發明的資料儲 存裝置很容易進行微型化處理’且可使用於高振動的環境 中本發明的原理非常簡單,其製造成本亦相當低廉。再 者田本發明的資料儲存裝置不使用時,亦不需要電力來 維持其記憶體之中的資料。 本發明使用數個諸如平面磁性線路的磁性導管。該等 平面線路係形成於部份的基板之上,不過與微電子式記憶 體不同的係,此基板與該裝置的電子操作或磁性操作毫^ 關係,該基板基本上僅係提供機械支撐。仍然可以採用慣 用的矽基板,不過因為並不需要使用到該基板的功能,= 以亦可使用矽以外的材料,例如玻璃或塑料。該等^料範 例包括聚亞醯胺,例如Kapton、聚對苯二甲酸7 t 、 吹C* _醋或1310938 发明, invention description: [Technical Field of the Invention] The present invention relates to a data storage device for storing digital information (such as computer buildings, digital music, digital video, etc.). Specifically, the invention relates to a data storage device capable of writing data in an unlimited number of times and reading back data. [Prior Art]: There have been many applications for data storage devices using various digital data storage in the past years. The data storage device is designed; it can be: in various operational characteristics, including capacity, access speed presence or absence of butterfly, size = stability ==_ force (in the power storage body including tape storage, magnetic ^ Both storage capacity and very fast storage provide excellent storage and write and overwrite applications, and can be adapted to the data - this is a limit === read head or optical read head Such as the degree, and the device of the second = storage device is miniaturized in any storage = practicality in a high vibration environment. Although, _ used storage: = = = the key to the storage of the bucket is precision The characteristics of the control. Therefore, there is a structure that can control any flapping. The device must have a surface of a precision device, such as the storage body requires the reader to access the device to limit the placement of the device. Design Freedom. 1310938 SUMMARY OF THE INVENTION One object of the present invention is to provide a digital data storage device that can be used in any environment to provide miniaturized sputum and/or sputum. Surgery, especially 4 other devices (such as smart cards, identification tags τm f, and / or can be incorporated into flexible substrates; and / / can be used in high-vibration environments. Months and χ 造成 本 、 、 、 、 、 、 、 The special purpose of the cheap storage is to provide a simple and effective way to store the Du Pu 胄 (4) storage device, and to read (4) Infinity is also written into the Beibei and the words to buy back the information. According to the present invention, there is provided a storable form for storing data, digital video, digital video, etc., comprising: more than one (specifically, a plurality of) memory elements, Each of the memory elements includes a planar magnetic conduit capable of maintaining and conducting a magnetic cut, the planar magnetic conduit forming a dedicated guide, wherein each of the continuous rails has at least one inversion node, and the selection: There may be a plurality of inversion nodes' and in particular there may be a plurality of inversions 2 points 1 under the action of an appropriate applied magnetic field 'magnetic nozzles conducted along the conduit, the direction of magnetization changing at the inversion nodes Direction, specifically, substance The magnetization direction is reversed. The strip guides & are formed in a continuous guide rail. Conventionally, the ducts form a closed loop to include the continuous guide rails. The node, optionally, may have a plurality of inversions, ie, points, and in particular may have a plurality of inversion nodes. According to the mechanism of the following 1310938, the data can be delivered in the closed loop. Sometimes, The magnetic conduit does not constitute an entire closed loop composed of a plurality of inverting nodes; instead, it is a linear link composed of a plurality of inverting nodes, and has a component for transmitting data between the two end points, so the data Still able to circulate around the closed loop, for example, one end of the link includes a beech writer device; the other end of the link includes a f-reading device. :: includes - an additional circuit 'Electronically from the link's resources back to the input of the link. The reversal node of the liver and the like includes the structure and shape of the catheter. After the adaptation of the magnetic field of the appropriate magnetic field (9), the magnetic field in the direction of the magnetic field, the magnetic field of the magnetic field is transmitted. A change will occur. 'The preferred system will produce a change in the direction of magnetization in the direction of magnetization. However, it is necessary to do so that the guides are too a & i t ., _ J to make the direction of the universal domain and the magnetic domain wall change ‘at the same time, no point at any point will be obvious. Therefore, the structural features in the region of the inversion node or the region containing the 3 3 hai reversal node must be capable of causing magnetic domain conduction without any significant violent polarization in the direction of the conduction singularity. The magnetic "direction changes, preferably a substantial inversion change in the magnetization direction. In a preferred embodiment, the inversion section A, ^卽 points include the direction of the magnetization of the inversion node. Inverted. Preferably, the system of Quanjiao has a part of the turning point in the pipe, and the direction of the cutting will not be the same as the original path, and then the direction will change back. In the original Ling ^ ^ ^, in the path taken, therefore there is no direct conduction sub-tower in the deviation. In particular, the deviation from the road including 1310938::2 produces a deviation of 90. Based on the above The deviation from the reason is preferably gradually deviated along the original. The sub- & 軏 as the distance example, 'the reversal node is said to be in the line 1; (7) the structure includes - pendulum. ^ Inward, or a topology equivalent to this structure is better The device according to the invention in each circuit: a plurality of such cycloids. Due to the magnetic conductance f, each magnetic enthalpy uses d Α ^ to include a plurality of cycloids, the cycloids ^ In a sharp manner in the direction of magnetization of the material wall passing therethrough = when the magnetic wall of the nozzle is conducted along the conduit of the present invention, the driving magnetic field of the field acts as the cycloid Preferably, each cycloid has a steering radius 'half the width of the conduit to the ten-seat door'; when the cycloid, the stomach etc. #线: two S domain walls A substantial change in the direction of magnetization can be caused by the cycloidal of X, for example, an inverse of 180. According to the present invention, the addition of the magnetic conduit must be capable of sustaining and conducting the wall of the material under the control of the magnetic field. In general, the magnetic conduit is composed of a continuous continuous track of magnetic material. Therefore, the circuit in the device according to the present invention preferably includes a magnetic circuit, specifically, a (four) substrate. Planar magnetic circuit on. — = This, the data storage device will A plurality of planar magnetic conduits (especially magnetic I/sheng lines) are used. The shape of the closed magnetic circuit is preferably a closed loop composed of a cycloid. The magnetic nanometer technology used in the present invention is The device 1310938 comprises a plurality of plane magnetic nanometer lines and the like, and is formed by a plurality of closed circuits; a plurality of closed loops composed of a cycloid line. "6 Hai and other planar magnetic nanowires have a better width The system is smaller than the melon, and is formed on any suitable substrate. The green 玖 + 壮 杈 杈 上 上 上 上 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细The difference between the manufacturing cost and the complexity of the device is that the device is very impractical; if the device uses more than 丨 micron, it is very impractical; for the line production technology Words 5 may be the lower limit of the goal of saving money. There should be no special restrictions on technical practice. The improved production technology will be able to further miniaturize the devices used. These lines will be placed on a substrate composed of a thin layer of magnetic material. The thickness of the line must be optimized to achieve the optimum efficiency of the device, and the thickness is generally a function of the width. Specifically, the line thickness is typically one-fortieth the line width. The line thickness is usually not less than 2 nm, preferably not less than 3 nm. In practice, the line thickness cannot be greater than 25nm. Such lines may be fabricated using optical micro-etching techniques, ray ray lithography techniques, microcontact printing techniques, electron beam lithography techniques, shadow mask deposition techniques, or any other suitable method. The lines are constructed of a magnetic material such as a permalloy, or c〇Fe, or any other soft magnetic material. The data storage device using the above-mentioned inversion node must be applied with a suitable magnetic field whose direction is changed (specifically, it should be a cyclically changing magnetic field). The following 1310938 will more accurately describe the operation mode of applying the magnetic field. The method allows the °H reverse node to have a memory function. Providing a plurality of loop arrays each having an 'inverted node' allows the data storage device of the present invention to sequentially store data in a loop-like manner. The data can be written into the apparatus of the present invention indefinitely and read back indefinitely. Unlike the tape storage or magnetic hard disk storage, the present invention does not use the moving parts. Therefore, the data storage device of the present invention can be easily miniaturized and the principle of the present invention can be made very simple in an environment for high vibration, and the manufacturing cost thereof is also relatively low. Furthermore, when the data storage device of the invention is not used, it does not require electricity to maintain the data in its memory. The present invention uses several magnetic conduits such as planar magnetic lines. The planar circuitry is formed on a portion of the substrate, but unlike a microelectronic memory, the substrate is in electronic relationship with the electronic or magnetic operation of the device, which substrate provides substantially only mechanical support. A conventional tantalum substrate can still be used, but since it is not necessary to use the function of the substrate, it is also possible to use materials other than tantalum, such as glass or plastic. Examples of such materials include polyamines such as Kapton, poly(terephthalic acid) 7 t , blowing C* _ vinegar or

Mylar型的材料、醋酸纖維、聚甲基丙烯酸甲酯或其它材 料。塑料基板的優點係成本低、製作方式簡單, J ~ 亚見還可 以提供機械彈性,以便讓本發明可適合整合於 、土膠卞片(例 如智慧卡)或布料之中。 與光碟、磁帶儲存體以及磁式硬碟儲存體不同的係, 因為不必以機械方式接取本發明的表面,所以可以將大量 1310938 的基板互相堆疊在頂端上面,形成一個三维的立方記憶體 本發明的面儲存密度極為適中,高於磁帶儲存體,但 低於磁式硬碟儲存體。必要時,讀取資料及寫入資料的速 率非常地快速,甚至高於硬碟機的速率。不過,本發明係 以裱狀的方式依序地儲存資料,所以對特定資料區塊的存 取時間相當的低,因而使得本發明對於直接取代電腦中所 使用的主硬碟機而言,仍有限制。 國際專利申請案第pCT7GB01/〇5〇72號便係基於上述觀 點來申請及㈣c〇wbuni〗Welland紙材的原理,該案敛 述的係如何以奈米級的磁性材料點所組成的鏈路(或奈米級 的平面磁性線路)來建構數位邏輯電路。明確地說,便是說 明本發明圖1所示的磁性Ν〇τ閘極。 則研衣的係 m 姚 - 啊取咏闲極之磁性材料夕 :内的磁化方向。該問極的令間結構將來自左方的磁化: 向反轉。 β M > ^ ^ W ^ ^ ^ ^ 乃…π π々叼嘗隨著時間 二裝置的平面中進行循環。雖然本發明的裝置並不受限 =操作理論,不過應該注意的係,因為磁性形二 4向特性,該線路中的磁化方向 狀的 的長軸方向中。此意謂著會 ?限於該線 本質上便Μ磁化方向,因 文仔隹者一進制的表示特性。 該線路掃過一磁,壁,便可改變磁化 二磁場沿 環的本質意謂著可在角落附近實現㈣壁。夕加磁場 1310938 根據本發明’可以合宜的方法來製作如上述般的NOT 閘極。為達目的,較理想的係,略為修正該閘極的形狀, 與圖1中的形狀不同,使其具有擺線形狀。該閘極的輸出 曰被&且的磁性導管(例如平面磁性線路)連接回到其輸入 端以形成一封閉迴路。此等迴路所組成的陣列便構成根 據此較佳實施例之本發明的裝置’該裝置包括被形成於由 串連擺線所組成之大型封閉迴路中的平面磁性奈米線路, 以便構成由磁性N0T閘極所組成的鏈路。最後一個NOT 閘^的輪出會被一平面磁性線路回饋至第一 NOT閘極的輸 入端’形成—封閉迴路’以便讓資料序列能夠循環遞送。 當磁缚壁在適當的循環操作磁場作許(該等磁場的作 =式如上所述,下面將會作更詳細的說明),傳導經過該 專不米線路時,該等擺線便可當作用以傳導該等磁嘴壁的 反轉節點。反轉輸出僅會出現在該循環外加磁場的半個週 期時間延遲之後,如此可使得每個反轉節點如同一個單一 回:的α己隐體早几或正反器。因此,由該等擺線所組成的 :便:有如同串列式循環移位暫存器般的記憶體功能, 且可當作本發明的資料儲存裝置。 =本發明之另一項觀點’本發明所提供的資料儲存 糸、,先包括-個以上上述的裝置元件;並且進_牛一、 場驅動器,用以提供一受控 括一磁 又授的時變驅動磁場。 器較佳的設定方式係將該驅動磁場 的所有擺線之上,並且同時施加於 的特足迴路中 ,, β糸統中的所有迴蹊夕 。如此便使得本系統具有獨特 邗系将性。該磁場係同 12 1310938 時被施加於整個迴路中,因此 前傳送,而非如慣用的磁…的貝科位70會同時被向 用下僅能夠局料“傳送。 在寫人頭的作 動抑計“合適當的磁場°較佳的係,該磁場驅 兩::—由兩個正交磁場所組成的受控磁場,該等 作),而ΓΓΓΓ預設的順序進行操作(較佳的係,交替操 式磁場。=,能夠以順時鐘或逆時鐘方向形成-鐘 項觀點的儲存裝置中。將貧料儲存於根據本發明第- 2統可能進-步包括適當的電氣輸人及/或輸出(及/ =輸入及/或輸出),以便能夠在記憶體儲存與掏取系 統中使用該貧料儲存裝置。 料儲將參考0 2至8來說明根據本發明原理之磁性資 料儲存裝置的操作範例。 【實施方式】 圖2所示的係與圖1相同 丨J旳Ν◦丁閘極不意圖,不過特 別的疋已針對本發明與以最佳 ,,佳化調適,使其具有一擺線形 狀。該閘極係以聚焦離子束對 τ ^基板上面5nm厚的透磁合 备(MisoFe2。)薄膜進行碾磨而製 圖中僅有亮白陰影區 =性材料,其它對比區則係因為製作該閘極期間所使用 二夕重步驟礙磨製程所造成的。圖㈣示的係閘極中,已 經利用一平面磁性線路將其輪出遠 侧逐接回到其輸入端,以形 成—封閉迴路。圖2b所示的係呤n^ 幻糸e亥閘極結構之放大圖,其中 13 1310938 ,結構具有-擺線形狀。圓2。所示的係響應外加的循環磁 場於點I及點II所進行的磁光測量結果。於輸入(軌跡圖U 變化狀態及輸出(執跡圖Ιυ變化狀態之間的半個循環延遲 等於該外加的循環磁場的半個週期,其對應的便係一種記 憶功能。 usy j π\ ’更明確地說係此延遲的起點β 於低磁场條件作用下,次微米鐵磁平面線路中的磁化 =向會因為強烈的磁性形狀非等向性的關係,而傾向於沿 ^亥線路的絲。當兩個方向相反的磁化方向於線路中交 二二便=生連續原子磁運動的重新排列,雖然該重新 =不非常劇烈’不過卻會於特歧離中逐漸地進行, 以幵> 成一磁_壁。 目刖吾人已經熟知的在 場,#^… 系,糟由施加與該線路平行的磁 句’便可讓磁轉壁沿菩吉綠以[ a社丄 者直線的次微米磁性線路進行傳導。 ^吏用本發料,會賴著㈣於該 變化的向量來外加H / 卞囬甲進仃循環 角茇十* ’以便沿著亦會改變方向盥轉彎 角洛之磁形線路1來傳導磁螓战 门/、轉穹 循環便界定屮^ 導磁可壁7。順時鐘循環或逆時鐘 的對掌性時,磁疇壁7設磁場與角落具有相同 導。不過,因為:一::該於磁性線路角落附近進行傳 ~因此在特定對掌性们得導 於其中-個方向中通過一特t —内’磁,幻將僅能 必需要有明確信號流動方向之此項結果符合任何 门之邏輯系統的重要條件。次微 1310938 米磁性線路1内的兩種穩定磁化方向正好可提供用以代表 兩種布林邏輯狀態的本質意義,此項特徵連同外加一循環 磁場便可構成由該記憶體裝置所組成之每個邏輯單元的運 作基礎。 ,、.,, ,丨玉久付切月&业且闡迎當 位於一適當的循環磁場内時的贈閑極功能。假設該磁場 係以反時鐘的方式循環。當外加磁場從水平方向的循環方 式改變成垂直方向的循環方式時,抵達接合端點「ρ」(圖 3Β)的磁嘴壁7將會在該接合位置的第—角落附近傳導(圖 3:並且傳導至端點「Q」。「ρ」點與%點之間的磁 =續狀態(圖3D)e接著,當該磁場向量持續朝相 ^ 環時,該磁嘴壁7便應該在該接合位置的第 二角「落附近傳導(圖3E),離開端點「R」,並且於「q」點 :二」點之間恢復連續狀態,與即將進入該接合處的磁 '經==來:剛離開該接合處的線路磁化方向應該已 導延遲的時間:實更應該能夠以半個磁場循環傳 總共達:::與::r_…間 送至該輸入端,便可讓此Λ 一起’並且將該鍵路的輸出回 圖4所示的#太5 '延遲具有相關的記憶功能。Mylar type material, acetate, polymethyl methacrylate or other materials. The advantages of the plastic substrate are low cost and simple manufacturing method, and J ~ Ami can also provide mechanical elasticity, so that the present invention can be suitably integrated into a clay film (such as a smart card) or a cloth. Unlike a disc, a magnetic tape storage, and a magnetic hard disk storage, since it is not necessary to mechanically access the surface of the present invention, a large number of 1310938 substrates can be stacked on top of each other to form a three-dimensional cubic memory. The surface storage density of the invention is extremely moderate, higher than the tape storage, but lower than the magnetic hard disk storage. Whenever necessary, the rate at which data is read and written is very fast, even higher than the speed of the hard drive. However, the present invention stores data sequentially in a meandering manner, so the access time to a particular data block is relatively low, thus making the present invention still directly replace the main hard disk drive used in the computer. limited. The international patent application pCT7GB01/〇5〇72 is based on the above viewpoints and (4) c〇wbuni〗Welland paper principle, the case is a link of how to use the nano-scale magnetic material points (or nano-scale planar magnetic lines) to construct digital logic circuits. Specifically, the magnetic Ν〇τ gate shown in Fig. 1 of the present invention is explained. Then the line of the research clothes m Yao - ah take the magnetic material of the idle pole: the magnetization direction inside. The interrogation structure of the pole will be from the magnetization of the left: the inversion. β M > ^ ^ W ^ ^ ^ ^ is a π π 々叼 々叼 随着 随着 随着 随着 随着 随着 随着 随着 随着 随着 随着 随着 随着 随着 随着 随着 二Although the apparatus of the present invention is not limited to the theory of operation, it should be noted that because of the magnetic shape, the magnetization direction is in the direction of the long axis of the magnetization direction. Does this mean that? It is limited to the line, which is essentially the direction of magnetization, because of the character representation of Wenzi. The line sweeps through a magnetic, wall, and can change the magnetization. The nature of the magnetic field along the ring means that the wall can be realized near the corner. Even magnetic field 1310938 The NOT gate as described above can be fabricated in accordance with the present invention. For the purpose of the purpose, the shape of the gate is slightly modified, and the shape of FIG. 1 is different from that of FIG. The output of the gate is connected to its input by a magnetic conduit (e.g., a planar magnetic circuit) to form a closed loop. The array of such loops constitutes the apparatus of the present invention in accordance with the preferred embodiment. The apparatus includes planar magnetic nanowires formed in a large closed loop of tandem cycloids to form magnetic The link formed by the N0T gate. The turn of the last NOT gate is fed back to the input end of the first NOT gate by a planar magnetic circuit to form a closed loop to allow the data sequence to be cyclically delivered. When the magnetic binding wall is operated in a proper cyclic operating magnetic field (the above-mentioned magnetic field is as described above, as will be explained in more detail below), the cycloid can be used when conducting through the special line. Acting to conduct the inversion nodes of the walls of the magnetic nozzles. The inverted output will only appear after a half-cycle time delay of the applied magnetic field of the loop, so that each inverted node is like a single back: alpha-hidden early or flip-flop. Therefore, it consists of the cycloids: it has a memory function like a tandem cyclic shift register, and can be used as the data storage device of the present invention. Another aspect of the present invention is that the data storage device provided by the present invention includes one or more of the above device components; and the field driver is provided to provide a controlled magnetic and magnetic Time-varying driving magnetic field. The preferred setting of the device is above all the cycloids of the driving magnetic field, and simultaneously applied to the special loop, all the loops in the beta system. This makes the system unique. The magnetic field is applied to the entire circuit at the same time as 12 1310938, so the pre-transmission, rather than the conventional magnetic...the Becco bit 70 will be used at the same time only to be able to "transfer." It is preferred to use a suitable magnetic field, which is driven by two magnetic fields, which are operated by a predetermined sequence (preferred system). , alternating magnetic field. =, can be formed in a clockwise or counterclockwise direction - the clock point of view of the storage device. The storage of lean materials in accordance with the second system of the present invention may further include appropriate electrical input and / Or output (and / = input and / or output) to enable the use of the poor storage device in the memory storage and retrieval system. Storage will refer to 0 2 to 8 to illustrate a magnetic data storage device in accordance with the principles of the present invention [Embodiment] The embodiment shown in Fig. 2 is the same as that of Fig. 1, but the special 疋 has been adapted to the present invention and optimized, so that it has a pair of cycloidal shapes 5 ^ 5nm thick magnetically permeable (MisoFe2.) film on the substrate for grinding, only bright white shading area = sex material in the drawing, other contrast areas are due to the use of the second step during the production of the gate Caused by the grinding process. In the system gate shown in Figure (4), a wheeled magnetic circuit has been used to pull the wheel out of the wheel to its input end to form a closed loop. The system shown in Figure 2b A magnified view of the phantom e-gate structure, 13 1310938, the structure has a cycloidal shape. Circle 2. The shown is the magneto-optical measurement of the applied cyclic magnetic field at points I and II. (The track diagram U changes state and output (the half cycle delay between the track map and the change state is equal to half the period of the applied cyclic magnetic field, which corresponds to a memory function. usy j π\ ' more specifically It is said that the starting point β of this delay is under the action of low magnetic field conditions, and the magnetization in the sub-micron ferromagnetic plane line = tends to be along the line of the ^hai line due to the strong azimuthal relationship of the magnetic shape. Opposite direction of magnetization In the line, pay two or two = the rearrangement of the continuous atomic magnetic motion, although the re-= is not very intense', but it will gradually proceed in the special separation, to 幵> into a magnetic_wall. Well-known presence, #^... system, the application of the magnetic sentence parallel to the line can make the magnetic transfer wall along the Boji Green to conduct the sub-micron magnetic circuit of the line. The material will depend on (4) the vector of the change plus H / 卞 甲 仃 仃 仃 仃 茇 * * * * * 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便The 穹 cycle defines 屮^ magnetically conductive wall 7. When the clockwise or counterclockwise palm is opposite, the magnetic domain wall 7 has a magnetic field having the same conductance as the corner. However, because: one:: it should be transmitted near the corner of the magnetic circuit. Therefore, in a particular direction, the specific pair of palms will pass through a special t-inner magnetic, and the magic will only need to have a clear signal flow. This result of the direction is in line with the important conditions of any gate logic system. The two stable magnetization directions in the submicro 1310938 m magnetic circuit 1 can provide the essential meaning of representing the logic states of the two kinds of Boolean. This feature, together with the addition of a cyclic magnetic field, constitutes each of the memory devices. The operational basis of a logical unit. ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, It is assumed that the magnetic field circulates in an anti-clocking manner. When the applied magnetic field changes from the horizontal circulation mode to the vertical direction circulation mode, the nozzle wall 7 reaching the joint end point "ρ" (Fig. 3A) will be conducted near the first corner of the joint position (Fig. 3: And conduction to the end point "Q". The magnetic = continuous state between the "ρ" point and the % point (Fig. 3D) e. Then, when the magnetic field vector continues to face the phase ring, the magnetic nozzle wall 7 should be The second angle of the joint position "conducts near the drop (Fig. 3E), leaves the end point "R", and resumes the continuous state between the "q" point: the second point, and the magnetic 'command that is about to enter the joint == Come: the direction of the magnetization of the line just leaving the joint should have been delayed: it should be able to pass a total of half of the magnetic field to the input::: and ::r_... to the input, you can make this Together, 'and the output of the key back to the #太5' delay shown in Figure 4 has an associated memory function.

閘極,並且利用:平二的簡圖,圖令已經串連三個N〇T 千面磁性線路將該鏈路的輸出回饋至該 15 1310938 鏈路的起始位置。五人 n ^ ^ 〇人已經利用特定的外加磁 同的賢料位元序列程式化至該裝:將兩個不 圍便讓该資料能夠開始繞著該迴路進行循環。 易位元序列循二: 繞該鍵路進行搞環的簡 -次。® a “ ”隔五個循裱便會重複該圖案 圖4b t的軌跡圖η顯干的在搭M # 的複雜相,讀㈣路進行循環 ^ f J再週期為該循環磁場的π + μ 了理士 置可以有效地作A η 環時間。該裝 有效地作為—5位位元的 過該循環磁場的任& 暫存器。母經 會向右移動牛兮& 衣之後’該資料位元序列便 得的:Γ: 資料係利用逆時鐘的循環磁場所取 =:=:等資料係以逆時鐘的方向環繞該條磁性 鐘的方ΓΓ 亦可將該磁場的循環方向反轉成順時 鐘的=炎Γ該資料循環的方向反轉,並且開始以順時 、方式來%繞該條磁性環路。 果示:圖5所:的係使用lw固贿閉極之本發明的檢測結 序 圖5b 11示的係環繞該迴路進行循環的簡易位元 1,其重複週期為該循環磁場的13次循環時間。 影餘過f平面磁性線路上面或下面、載有電流的微 I線路,便可將資料寫入每個迴路之中。而欲從每個 該迴之中讀出資料時則可採用下面的方式:使用被黏接至 落其中一部份的磁性隧道接面;測量該線路之該等角 复/、中處的磁噼壁電阻值;或是測量該等N0T閘極中 ,、中—個的磁疇壁電阻值。 圖6所示的係該些資料輸入/輸出方法的範例。藉由通 16 1310938 過該環路上面或下面、葡右φ 戰有電流的電氣微影蝕刻線路( ’便可將資料寫入該迴路之中客^ ν 中。資料會以箭頭Α的方向環 ,-堯该迴路。欲從該迴路之中靖次 中讀出負料時則可採用下面的方 式:於該迴路其中—點虛从 點處的兩個電氣端子(62)之間形成一 磁性隨道接面(上方 次疋藉由兩個電氣端子(63)來測量該 玉衣路中一小部份内戶斤&人& / 所包3的任何磁疇壁電阻值(下方)。 :本發明的變化例中(該圖中並未顯示),該磁性導管 不會構成一封閉的反轉節點迴路,而是構成一條由 Ϊ =所組成的直線鏈路’於該條鏈路的其中一端具備 -備㈠… 鏈路的另一端則具備-資料讀取 ^ 剌電路必須以電氣方式將資料從該 ,、,表,, 的輸入端,以便讓資料仍銬可 以看似封閉迴路的形式進行環繞。 谓然了 該等資料迴路係位於— 唾、η仙 ^ ψ 該磁%的向量在該 專迴路所組成的平面中循± 里仕涿 9ΠΠΛ^ 甲循%的時間頻率範圍介於1Hz至 200MHz之間。當該磁塥描 至 不# 盾裒時,其磁場振幅可能會保持 $的磁場向量軌跡;或者其 幅可能會有變化,因錢或者其磁场振 蔣/4. , 橢圓形的磁場向量軌跡。 將一條電磁線段放置在該等 過交流^ 、路下方,然後在該線段中流 、乂机電流,便可在小面 較大、裝置中達到此效果。至於在 苹乂大面積的裝置中, 牡 極電β 將栽有該等迴路的基板放置在四 才5電磁鐵之内以達到此效果。 該磁場強度應該足以確 疇壁推h邮士 乐此夠經由母個NOT閘極將磁 可土推向所有的方向之中,但 疋具強度部不可以大到在與 17 1310938 該資料輪入機制無關的情形下集結新的磁•壁。 經由每個騰間極來推進磁轉 用下面的方式進行調整:改…、需要的磁場可以利 迴路的寬产 〇迴路的厚度、改變該等 的寬度、以及改變用以製造該等 = 麥強度應該足以讓該裝置不會 抹除。如果雜埤路+θ # n固的雜放磁場而被 發明亦了妥放磁%抹除效應構成一項嚴重的問題時,本 么明亦可以利用MuM 吟本 採用選仃屏蔽保濩。最理想的裝置所 用的外加磁場強度範圍介於5〇-2_e之間。 如圖7所示’本發明可能係在一單 量的資料迴路,並且使匕括大 確的迴路。® ^ 解乡^來定址正 與資料讀取解放f驅動器及多工器⑼ 取解夕工益及放大器(72)之間具有數個迴路。 針對特疋的應用,吾人可在迴路的數量及每個迴路中 ,1、極的數量之間找到最佳的平衡。如果迴路的數量报 v而母個迎路+贿閉極的數量很多的話,非常容易將其 整合至一封裝之中’而且成本相當低廉;但是如果因為製 造缺陷導致單-他Ν〇τ閘極故障的話,便可能導致整個楚 置發生故障。此種組合方式還具有極長的資料存取時間, 因為就-特定的資料區塊而言’平均來說,吾人必須等待 非常多個時脈循環方能使其循環至讀取位置。如果迴路的 數量很多而每個迴路中謝閘極的數量很少的話,便不用 擔心個㈣’閘極發生故障(因為可以將含有故障閑極 的迴路從電路中移除,而不會嚴重地減少整體的儲存容量 ),並且具有極快速的存取時間,不過卻會具有較多的讀 1310938 點(因而成本會比較高),…較難以將其整 孫士早―的積體電路封裝之中。本申請案中所有的圖式 :8個閑極所組成的迴路。不過這僅係示意圖,實於 母個迴路可包含數以千計的閘極 不 發月的一項特殊特徵係並不僅限於將資料迴路放置 存二:的平面之中。與光碟、磁帶儲存體以及磁式硬碟儲 ,、同的係,並不需要以機械方式來接取本發明的表面 成:以如® 8所示’可以將基板互相堆疊在頂端上面,形 三維的立方記憶體。此項優點可達到非常高的資料 子进度。必要時’同一立方體之中的所有基板可以共用 相同的外加循環磁場,以保料層彼此之間的同步狀態, 並且降低裝置的複雜度。 本發明可設計成用以輸入/輸出單一個序列資料串,甚 ^必要時,可以平行使用數個環路或多個層數來儲存具有 夕重位元寬度的資料字組串。 因為存取時間極低,因此本發明並不適合取代電腦中 所使用的主硬碟機。不㊣’本發明卻可應用在下面的部份 情形中以及其它情形中: •可供口袋型數位音樂播放機(例如Mp3播放機)作為 暫時儲存數位音樂的用it。此項應用需要的係能夠用以儲 存經常必須循序重複播放之數位資訊的低成本、非揮發式 、可覆寫式儲存體。如果利帛2QQnmX(的平面線路的話, NOT閘極便可能佔據約w的面積。所以被資料鏈路覆 蓋面積為lcm2的單層便可提供能夠儲存12個百萬位元組 19 1310938 *· .. 的序列資料儲存體,該容量足以播放12個小時的CD品質 音樂。採用多層堆疊的方式便可以極低廉的成本提供數小. 時的CD品質音樂。 可供數位相機作為暫時儲存數位相片的用途。目前 係藉由快閃式電子記憶體來達到此目的,不過該項作法相 當昂貴而且僅具有非常有限的覆寫循環次數。 可供行動電話、個人記事薄、掌上型電腦及智慧卡等 作為非揮發性的離線儲存體。 【圖式簡單說明】 圖1所示的係先前技藝之磁性NOT閘極(參件上述說 明)的示意圖; 圖2所不的係經過修改之後的磁性Ν〇τ閘極,其可當 作本發明之資料儲存裝置; 圖3所示的係圖2之Ν〇τ閘極結構(A部份)的示意圖 以及田磁疇壁在循環磁場H的作用下進入p點時的效應 之示意圖; φ 圖4中A部份所示的係3個環狀相連的磁性Ν〇τ閘極 ’其構成5位位元串列式移位暫存器,而Β部份所示的係 在循環磁場的作用下’如何迫使簡易的位元序列(軌跡圖1} 及複,的位元序列(軌跡圖Π)於該環狀線路中循環(Α部份 中的星號表示的便係該迴路中的測量點,其測量結果便如 Β部份所示); 圖5中Α。卩知所示的係丨1個環狀相連的磁性閘 20 1310938 極,其構成13位位元串列式記憶體,而B部份所示、 在循環磁場的作用下,如何迫使簡易的13位位元資^係 =該迴路巾«(A部份中的錢表示的㈣該迴路中的^ 里點,其測量結果便如B部份所示); 、d $ “斤示的係本發明之資料寫入機制與資 之不意圖; 叫僻剌 圖7所示的係分別以電子多工器及解多工器進行定址 同個基板上的數個磁性迴路之示意圖;以及 2 8所示的係將各含有數個資料迴路的數個基板堆疊 形成-個三維的立方記憶體之示意圖 元件符號說明 1 磁性線路 5 擺線 7 磁疇壁 61 電氣微影蝕刻線路 62,63 電氣端子 71 資料寫入驅動器及多工器 72 資料讀取解多工器及放大器 21The gate, and using: a simple diagram of the second, the command has been connected in series with three N〇T thousand-sided magnetic lines to feed the output of the link back to the beginning of the 15 1310938 link. Five people n ^ ^ The monks have been programmed into the installation using a specific sequence of additional magnetic bits: the two are not allowed to loop around the loop. The translocation element sequence follows: a simple-time rounding around the key path. ® a “ ” repeats the pattern every five cycles. Figure 4b t trajectory η is dry in the complex phase of M #, read (four) way to cycle ^ f J re-cycle is π + μ of the circulating magnetic field The Lectra can effectively make the A η ring time. This device is effectively used as the -5 bit bit of any & register of the circulating magnetic field. The mother will move the burdock & clothing to the right. 'The data bit sequence is obtained: Γ: The data is taken from the cyclic magnetic field of the counterclock. =:=: The data is surrounded by the magnetic field in the direction of the counterclockwise The square of the clock can also reverse the direction of the magnetic field to a clockwise direction = the direction of the data cycle is reversed, and begins to wrap around the magnetic loop in a timely manner. RESULTS: Figure 5: The detection sequence of the present invention using lw-bumping closure. Figure 5b11 shows a simple bit 1 circulating around the loop with a repetition period of 13 cycles of the circulating magnetic field. time. The data is written into each loop by the micro-I line above or below the f-plane magnetic circuit carrying the current. To read data from each of the backs, the following method can be used: using a magnetic tunnel junction that is bonded to one of the portions; measuring the magnetic angle of the equiangular complex at the middle of the line The value of the wall resistance of the wall; or the value of the domain wall resistance of the medium and the middle of the N0T gates. An example of such data input/output methods is shown in FIG. By passing 16 1310938 over the loop above or below, the right φ battles the electric micro-etching circuit (' can write data into the loop ^ ν. The data will be in the direction of the arrow Α , -尧 The circuit. To read the negative material from the loop in the loop, the following method can be used: in the loop, a magnetic point is formed between the two electrical terminals (62) at the point With the track junction (the upper secondary 疋 by two electrical terminals (63) to measure the magnetic field resistance value of a small part of the inside of the jade road & the person & / package 3 (below) In a variation of the invention (not shown in the figure), the magnetic conduit does not form a closed reverse node loop, but constitutes a linear link consisting of Ϊ = One end of the link has - (a) ... the other end of the link has - data read ^ 剌 circuit must electrically input data from the input of the,,,,,,,, so that the data can still appear as a closed loop The form is surrounded. It is said that the data loops are located at - saliva, η仙 ^ ψ The vector of the magnetic % is in the plane formed by the special loop. The time frequency range of the frequency range is between 1 Hz and 200 MHz. When the magnetic trace is not # shield, its The magnetic field amplitude may maintain the magnetic field vector trajectory of $; or its amplitude may change, due to the money or its magnetic field vibration / 4. The elliptical magnetic field vector trajectory. Place a magnetic line segment in the alternating current ^, road Below, and then in the line segment, the current is reduced, the effect can be achieved in the larger facet, the device. As for the large area of the device, the electrode is placed on the substrate with the circuit. This effect can be achieved by the four-electrode 5 electromagnet. The strength of the magnetic field should be sufficient to make the wall push the poem to push the magnetic soil into all directions via the parent NOT gate, but the strength of the cooker It is not large enough to assemble new magnetic walls in the absence of the data entry mechanism of 17 1310938. The magnetic transfer is advanced through each of the enthalpy poles in the following way: change..., the required magnetic field can be beneficial Wide production loop The thickness, the width of the changes, and the change to make the = wheat strength should be sufficient to prevent the device from being erased. If the hybrid magnetic field + θ # n solid magnetic field is invented, it is also properly magnetic. When the erase effect constitutes a serious problem, the present invention can also use the MuM 吟 采用 仃 仃 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 濩 最 最 最 最 最 最 最 最 最 最 最Illustrated 'The invention may be in a single data loop, and the circuit is included. ® ^ 解乡^ Addressing and data reading liberation f drive and multiplexer (9) There are several loops between (72). For special applications, we can find the best balance between the number of loops and the number of poles in each loop. If the number of loops is v and the number of mothers and roads is very large, it is very easy to integrate them into a package' and the cost is quite low; but if the manufacturing is defective, the single-he Ν〇τ gate If the fault occurs, it may cause the entire fault to occur. This combination also has extremely long data access times because, as far as the specific data block is concerned, on average, we have to wait for a very large number of clock cycles to cycle it to the reading position. If the number of loops is large and the number of gates in each loop is small, there is no need to worry about (4) 'The gate is faulty (because the loop containing the faulty idle pole can be removed from the circuit without serious Reduce the overall storage capacity), and has a very fast access time, but it will have more reading 1310938 points (thus the cost will be higher), ... it is more difficult to package its integrated Sunshine early integrated circuit in. All the drawings in this application: a loop composed of 8 idle poles. However, this is only a schematic diagram. A special feature system in which the mother circuit can contain thousands of gates is not limited to the plane in which the data loop is placed. In the same way as the optical disc, the magnetic tape storage, and the magnetic hard disk storage, it is not necessary to mechanically access the surface of the present invention: as shown in Fig. 8, 'the substrates can be stacked on top of each other, shape Three-dimensional cubic memory. This advantage can achieve very high data progress. When necessary, all of the substrates in the same cube can share the same applied circulating magnetic field to ensure the synchronization state of the layers with each other and to reduce the complexity of the device. The present invention can be designed to input/output a single sequence of data strings, and if necessary, a plurality of loops or a plurality of layers can be used in parallel to store a string of data strings having a width of the extra-bits. Since the access time is extremely low, the present invention is not suitable for replacing the main hard disk drive used in the computer. The present invention can be applied to the following partial cases and other situations: • A pocket type digital music player (e.g., an Mp3 player) can be used as a temporary storage for digital music. This application requires a low-cost, non-volatile, rewritable storage for storing digital information that must be repeatedly played back and forth. If the 2QQnmX (the planar line, the NOT gate can occupy about w area, so a single layer covered by a data link of 1cm2 can provide 12 million bytes of 19 1310938 *. The serial data storage capacity is enough to play 12 hours of CD quality music. The multi-layer stacking method can provide a small number of CD-quality music at a very low cost. The digital camera can be used as a temporary storage digital photo. Use. Currently, this is achieved by flashing electronic memory, but this method is quite expensive and has only a very limited number of overwrite cycles. It can be used for mobile phones, personal notebooks, palmtop computers and smart cards. As a non-volatile offline storage. [Simplified Schematic] FIG. 1 is a schematic diagram of a prior art magnetic NOT gate (refer to the above description); FIG. 2 is a modified magnetic Ν〇 τ gate, which can be regarded as the data storage device of the present invention; FIG. 3 is a schematic diagram of the Ν〇τ gate structure (part A) of FIG. 2 and the magnetic domain wall in the circulating magnetic field Schematic diagram of the effect of entering the p-point under the action of H; φ Figure 3 shows the three ring-connected magnetic Ν〇τ gates shown in Part A, which constitutes a 5-bit tandem shift temporary storage And the part shown in the Β part is under the action of the circulating magnetic field 'how to force a simple bit sequence (track map 1} and complex, the bit sequence (track map Π) to circulate in the loop line (Α The asterisk in the part indicates the measurement point in the loop, and the measurement result is as shown in the ) part); Figure 5 shows the system shown in Fig. 5. A ring-connected magnetic brake 20 1310938 The pole, which constitutes a 13-bit tandem memory, and the part B shows how to force a simple 13-bit bit = the loop towel « (in part A) According to the money, (4) the point in the loop, the measurement result is as shown in part B); d, “The indication of the data writing mechanism and the capital of the invention is not intended; The schematic diagrams of addressing a plurality of magnetic circuits on the same substrate by an electronic multiplexer and a demultiplexer, respectively; and the system shown in FIG. A plurality of substrates having a plurality of data loops are stacked to form a three-dimensional cubic memory. Symbols are illustrated. 1 Magnetic circuit 5 Cycloid 7 Magnetic domain wall 61 Electrical micro-etching circuit 62, 63 Electrical terminal 71 Data writing driver and Multiplexer 72 data reading solution multiplexer and amplifier 21

Claims (1)

1310938 拾、申請專利範面: κ一種以可讀取的形式錯存數 ’其包括一個或更多的記憶 。的^儲存裝置 …體7Q件,每個印倍 ― 括一平面磁導管,該平而#播 忑隐體70件皆包 該平面磁導管係形成一連續;:夠:持且傳導磁疇壁, *至少,轉節一 向。 磁化方向會在該等反轉節點處改變方 2·如申請專利範圍第丨項之 連續軌皆具備至少-個反轉r 、子'",其中母條 下,>著节以值道 於適當的外加磁場作用 。者該導g傳導的磁疇壁之磁 反轉節點處被反轉。 耳質上會在”亥荨 3·如中請專利範㈣i項之f料儲存裝置,其中一導 ^ 糸被形成於一封閉迴路之中,以便構成-條連續的傳導 ”4.如中請專利範圍帛i項之資料儲存裝置,其中導管 矣不會構A九整的封閉迴路,而是構成—由反轉節點所 且成的鏈路’且提供用於兩個端點之間傳送資料之構件, :使資料仍然能夠繞著看似封閉的迴路循環,該構件於該 括路/、、中一端包括一資料寫入設備,於該鏈路的另一端包 …資料讀取5史備,以及包括一額外的電路,以電子方式 攸4鏈路的輪出端將資料回饋至該鏈路的輸入端。 ^ 5·如申凊專利範圍第1項之資料儲存裝置,其中反轉 節點句把# ί兹μ , 匕枯該V官的結構及形狀的特徵,其經過調適之後, 22 1310938 於適當的外加磁場作用下,便可讓磁域傳導的磁化方向發 生改變。 6.如申請專利範圍帛5項之資料儲存裝置,其令反轉 即點,括該導管的結構及形狀的特徵,其經過調適之後, j循衣的外加磁場作用下,便可讓磁域傳導的磁化方向實 質上發生反轉。 ^ 7.如中請專利範圍第6項之資料儲存裝置,其中反轉 即點包括一位於一節點前方的偏離部,磁化方向實質上會 於该處發生反轉;以及進一舟白 及進步包括一部份,於該部份令, 方向會與原來的路徑不同’而後方向又會改變 回到原來的路徑中,田认# &你, 的傳導路徑存在。 偏離的部份中並不會有直接 離二=專利範圍"項之資料儲存裝置,其中該偏 離包括與料官原來的路徑產生9G。的偏離。 如中請專利範„ 7項之資料儲存裝置,其中該反 轉節點於該導管迴路結構或與士 、 包括-擺線部。 …。構等效料樸結構之中 I。 ·如申請專利_ 9項之資料储存裝置,包括複 數個設於每個迴路之中之該擺線部。 II. 如申請專利範圍帛1Q項之資料儲存裝置 成於封閉料之數條錄導管,每條 括先 個擺線,該等擺線係用以導官身包括複數 的磁化方向中造成方向反轉方式於通過其上的磁切 12·如申請專利範圍帛9項之資料儲存裝置,其中每 23 1310938 個擺線皆農士 倍至十倍轉向半徑’該半㈣介於該導管寬度的三 性導1管W請專利範圍第1項之資料儲存裝置,其中該磁 s ^括—條位於適用基板之上的平面磁性線路。 I4.如申請專利範圍第13項之資料儲存裝置,其中該 磁11線路包括厚度介於2⑽與25mn之間、寬度介於5〇nm 與1 # m之間的磁性奈米線路。1310938 Picking up, applying for a patent specification: κ A type of erroneous memory ‘which includes one or more memories. ^Storage device...body 7Q pieces, each print--including a plane magnetic tube, the flat and #-casting stealth 70 pieces all include the plane magnetic tube system to form a continuous; enough: hold and conduct magnetic domain walls , * At least, the transition has always been. The magnetization direction will change at the inversion nodes. 2. The continuous track of the third paragraph of the patent application has at least one inversion r, sub'", under the parent bar, > Apply a suitable external magnetic field. The magnetic inversion node of the magnetic domain wall that conducts the g is inverted. The ear quality will be in the "Hui 3", such as the patent paradigm (4) i item f storage device, in which a guide is formed in a closed loop, in order to constitute a continuous conduction of strips. The data storage device of the patent scope ,i, in which the conduit 矣 does not constitute a closed loop of A, but constitutes a link formed by the reverse node and provides for transmission of data between the two endpoints The component, the data can still be circulated around the seemingly closed loop, the component includes a data writing device at the end of the bracket, and at the other end of the link... And including an additional circuit to electronically feed the data to the input of the link. ^ 5 · The data storage device of claim 1 of the patent scope, wherein the reverse node sentence is # 兹 μ μ, 匕 该 该 该 该 该 该 该 该 V V V V V V V V V V V V V V V V 22 22 22 22 22 22 22 22 Under the action of a magnetic field, the direction of magnetization of the magnetic domain conduction can be changed. 6. If the data storage device of the patent application scope is 5, the reverse direction is included, including the characteristics of the structure and shape of the catheter. After the adaptation, the magnetic field can be made by the external magnetic field of the garment. The direction of magnetization of the conduction is substantially reversed. ^ 7. The data storage device of claim 6, wherein the inversion point comprises an offset portion located in front of a node, the magnetization direction is substantially reversed there; and the further progress and progress include In part, in this part, the direction will be different from the original path, and then the direction will change back to the original path, and the conduction path of Tian &#you; There is no direct data storage device in the deviation part, where the deviation includes 9G generated from the original path of the material officer. Deviation. For example, the data storage device of the patent model „7, wherein the reversal node is in the conduit loop structure or in the equivalent structure of the squirrel, including the trochoidal structure. The data storage device of 9 items includes a plurality of the cycloidal parts arranged in each circuit. II. If the data storage device of the patent application 帛1Q is formed into a number of recording pipes of the sealing material, each of the first a cycloidal line for guiding the official body including a plurality of magnetization directions to cause a direction reversal manner to pass through the magnetic cut 12; as in the patent application scope 帛9 item data storage device, wherein each 23 1310938 The oscillating line is 10 times the steering radius of the farmer's. The half (four) is the data guide device of the third aspect of the conduit width. The data storage device of the first item of the patent scope, wherein the magnetic s-strip is located on the applicable substrate A planar magnetic circuit according to claim 13 wherein the magnetic 11 line comprises a magnetic layer having a thickness between 2 (10) and 25 nm and a width between 5 〇 nm and 1 # m. Nano line. 拾壹、固式: 如次頁。Pick up, solid: like the next page. 24 1310938 柒、指定代表圈: (一) 本案指定代表圖為:第(2 )圖。 (二) 本代表圖之元件代表符號簡單說明: 捌、本案若有化學式時,請揭示最能顯示發明特徵的化學式24 1310938 柒, designated representative circle: (1) The representative representative of the case is: (2). (2) A brief description of the symbol of the symbol of the representative figure: 捌 If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention.
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