TWI290344B - Structure of layers and removing method thereof and method of testing the semiconductor machine - Google Patents

Abstract

A method of testing a semiconductor machine is provided. A wafer is provided and a removable auxiliary layer is formed on the wafer. A low dielectric constant dielectric layer with an expected thickness is formed on the removable auxiliary layer. The actual thickness of the low dielectric constant dielectric layer is measured and then compared with the expected value to determine if the deposition machine operates normally. The low dielectric constant dielectric layer is removed and then the removable auxiliary layer is removed. The method permits a recycling of the test wafer to reduce the production cost.

Description

1290344 17661twf.doc/006 IX. Description of the Invention: [Technical Field] The present invention relates to a method for removing a film layer from a low dielectric constant dielectric layer. In particular, in the prior art semiconductor manufacturing process, the chemical vapor phase, the six-selective i ^ parameter, wherein the Lai-enhanced chemical dynamic deposition f = many different ways to assist in the progress of the chemical deposition reaction. ^Using thermal energy and plasma, all semiconductor process equipment must perform daily measuring machine and work quality. Among them, the thickness of the chemical vapor deposition machine is all the same: otherwise, the film formation quality will be uneven = the sinking of the enhanced chemical vapor deposition machine will perform the purpose of the measuring machine, and the maintenance will be fixed. It is easy to deposit a film with a thickness that does not have a thickness. The method of testing a plasma enhanced deposition machine is to measure the particles of the low dielectric constant film on a bare wafer, that is, a test wafer, after depositing a low-voltage film (part^cle) /, | Thickness, uniformity, reflectivity, etc., compare whether the actual value of the above parameters approaches a predetermined value to determine whether the machine is operating stably. However, because the low dielectric constant film contains Multi-carbon molecules, easy to react with the wafer, even the use of diluted hydrofluoric acid solution (DHF) can not completely remove the low dielectric constant film on the test wafer, resulting in low dielectric constant film residue on the test wafer, Therefore, the test wafer can not be reused, which will result in excessive production cost. [Invention] 1290344 In view of the above, the object of the present invention is to provide a film layer to make the test wafer reusable. An object of the present invention is to provide a low-k dielectric layer, in addition to a method for removing a test wafer after removing a low-k dielectric layer. Further, it is still another object of the present invention to provide a low-dielectric dielectric layer. The test method of the semiconductor machine can reduce the consumption cost of the test wafer used by the test machine. The invention provides a film structure which is arranged on a wafer and is suitable for testing in a semi-J body machine, and the film structure includes Removing the auxiliary layer and the low-k dielectric layer, the low-k dielectric layer is disposed on the removal auxiliary layer. According to an embodiment of the invention, the auxiliary layer is removed in the film structure For example, a ruthenium oxide layer formed by a chemical vapor deposition process using tetraethoxy decane (TE0S) as a reaction gas source. According to the consistent embodiment of the present invention, in the above-mentioned film structure, chemical vapor deposition The process is, for example, a plasma enhanced chemical vapor deposition process. According to an embodiment of the invention, in the above film structure, the auxiliary layer is removed, for example, by using decane (SiH4) as a reaction gas source for chemical vapor phase. A nitride layer formed by a deposition process; in accordance with an embodiment of the present invention, in the above film structure, the semiconductor machine is, for example, a chemical vapor deposition machine. In the above-mentioned film layer structure, the material of the low-k dielectric layer is, for example, tantalum carbide, Black Diam〇nd material produced by Applied Materials, or by the US Novo System. Co〇ral material produced by Novdlus. 6 1290344 17661twf.doc/006 Crystal: It is the meaning of the formation of a low-k dielectric layer in / ^ 丨 ^ ^ ^ ^ Dielectric layer/other' first forming a removal auxiliary layer, and then removing the square dielectric layer of the low dielectric constant dielectric layer in the above 1= method according to the embodiment of the present invention. The 峨 constant mediates the hydrofluoric acid. The money engraving liquid used in the ',,, and 』 method is, for example, a test method for a semiconductor machine proposed by the present invention. First, a replacement auxiliary layer is formed on a wafer. Next, the dielectric layer is transferred to a low-k dielectric layer. Then 'measure the low number' with the electric layer. Then remove the removal auxiliary layer. According to an embodiment of the invention, in the above;: == low dielectric constant dielectric layer and removal assist "method: test =: = two 1290344 • 17661twf.d〇c / 006 In the _ machine 纟 low dielectric f dielectric layer. After the number of dielectric layers, == remove 'so there will not be a lot of residue on the removal of low dielectric constant 。. Then, / # After removing the auxiliary layer, the job wafer can be reused. Privately used test wafers are removed from the low dielectric constant.

The auxiliary layer is removed once, and then deposited:; outer Β2' ♦ 2: the actual thickness of the low dielectric tf dielectric layer deposited by human is in the pre-thickness, so the repeated use of the test wafer does not affect the measuring machine. The credibility of 'can reduce the cost of testing the wafer. The above and other objects, features, and advantages of the present invention will become more apparent and understood. A cross-sectional view of a film layer structure according to an embodiment of the present invention. Referring to FIG. 1, a film layer structure 110 is disposed on a wafer 100, such as a germanium wafer, which is suitable for testing semiconductor devices. The semiconductor device is, for example, a chemical vapor deposition machine. The film structure 110 includes a removal auxiliary layer 112 and a low-k dielectric layer 114. The removal auxiliary layer 112 is disposed on the wafer 100. Removal assistance The layer 112 is, for example, a ruthenium oxide layer formed by a chemical vapor deposition process using tetraethoxy decane (TEOS) as a reaction gas source, or a chemical vapor deposition process using decane (SiH4) as a reaction gas source. The yttrium oxide layer, wherein .1290344, 17661 twf.doc/006 forms a chemical vapor deposition process for removing the auxiliary layer 112, for example, a plasma enhanced chemical vapor deposition process. 蠓 Low dielectric constant dielectric layer 114 is set. Removal aid 112. The material of the low dielectric constant layer 114 is, for example, tantalum carbide, Biack Di_ndM material produced by Applied Materials, or manufactured by N〇velius, USA. C〇ral material. The formation method of the low-k dielectric layer 114 is, for example, a chemical vapor deposition method such as a plasma enhanced chemical vapor deposition method. The removal of the auxiliary layer 112 in the film structure 110 contributes to low The removal of the dielectric constant dielectric layer 114. After removing the low-k dielectric layer 114, a large amount of residue is not generated. Then, after removing the removal auxiliary layer 112, it is used for semiconductor machine testing. The wafer can be reused. Fig. 2 Α 2 Β Β 本 本 本 本 本 本 本 实施 实施 实施 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面Circle 200, wafer 200 is, for example, a stone wafer, and wafer 200 is suitable for testing of a semiconductor machine, such as a chemical vapor deposition machine. Next, a removal auxiliary layer 210 is formed on the wafer. Remove the material and formation side of the auxiliary layer 21〇 The method is, for example, a oxidized stone layer formed by a chemical vapor deposition process using W-oxide as a reaction gas source, or a oxidized stone layer formed by a chemical vapor deposition process using Wei as a reaction gas source. The chemical vapor deposition process performed by removing the auxiliary layer 21 is, for example, a plasma enhanced chemical vapor deposition process. Please continue to participate in the removal of the auxiliary layer (10) constant dielectric layer. Low dielectric constant dielectric Material of layer 22G 1290344 17661twf.doc/006 1 匕石夕, Coral material produced by American Diamond Technology Co., Ltd., a Black Diamond material produced by Applied Materials. Low dielectric system; 1 method of forming the electrical layer 220 is, for example, chemical vapor deposition, such as plasma enhanced chemical vapor deposition. Next, referring to FIG. 2B, the low-k dielectric layer 220 is removed. The shifting method is in the form of a formula, and the (iv) side liquid is, for example, a diluted hydrofluoric acid solution. Further, after the removal of the low-k dielectric layer 220, the removable removal auxiliary layer 210' removal method is, for example, a wet money engraving method using a surname liquid such as a silk acid solution. It is worth mentioning that the auxiliary layer 210 can also be removed while removing the low-k dielectric layer 220. Since the removal auxiliary layer 21G is formed between the low-k dielectric layer 220 and the wafer 200, the low-k dielectric layer 220^ is removed, and the low dielectric constant dielectric is not present on the wafer 200. The residue of the layer 22 残留 after the removal of the removal auxiliary layer 210, the wafer 200 can be reused in the test of the semiconductor submount. FIG. 3 is a flow chart of a testing method of a semiconductor machine according to an embodiment of the invention. A removal auxiliary layer is formed on the wafer. Forming a predetermined thickness measurement low dielectric layer constant dielectric layer on the removal auxiliary layer First, in step S300, then, a low dielectric constant dielectric layer in step S310. Next, in step S320, ..., 丨, % is wide, and the thickness is compared with the actual thickness to determine whether or not the operation is normal. Mouth port •, Ι 290311TM 〇 6 Subsequently, in step S330, the low-k dielectric layer is removed and the auxiliary layer is removed. Since a layer of removal auxiliary layer is formed between the low-k dielectric layer and the wafer, a large amount of residue remains on the wafer after removing the low-k dielectric layer and removing the auxiliary layer. Therefore, after the wafer is removed and removed, the wafer can be reused in the test machine. Table 4 shows experimental data sheets for semiconductor machine testing, which are experimental data charts obtained by performing semiconductor machine testing in accordance with conventional and inventive embodiments. The experiment was carried out in four groups, Comparative Example 1, Comparative Example 2, Experimental Example 1, and Experimental Example 2, and each set of experiments was repeated four times. 1290344 900/3OP.JI99I>l ^^tr 860 860 860 860 £90 ^.0 6 inch di 86Ό 0060 86Ό 860 860 860 86Ό 860 (Y)i^l^ δ inch εεοο inch U6 inch ΓΠΑος § inch 88 inch inch S9 inch ιε inch inch 10 inch IU inch 00 inch inch 00 inch inch 00 inch inch 00 inch inch 00 inch inch 00 inch inch 00^ ^fflr 86Ό 860 86Ό 860 180 6ΑΌ

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SS (Nf# 龠ik 1290344 17661twf.doc/006 such as "^ is the wafer in the prior art that does not deposit the auxiliary layer. The more rigorous method is to deposit a layer of 47 angstroms of low dielectric on the wafer. The electric constant is 2 ° ° then 'wet wire engraving with diluted hydrofluoric acid solution for 600 seconds = = layer. Then, the residual low residual thickness after measurement is over (four) 〇, the credibility is 〇. 9δ. Subsequently, the low-k dielectric layer of the electrode layer is deposited on the wafer, and the thickness is measured. The low-dielectric constant of the second deposition is 0 angstrom, and the reliability is 0.98. In the example!, because there is no ::= auxiliary layer, the low-k dielectric layer is easy to react with the wafer, so the low dielectric constant dielectric layer is removed cleanly, so that the second time sinks the dielectric layer. The actual thickness is higher than the predetermined thickness. The comparison of the low-w electrical suspension of the first example, the experimental example i and the experimental example 2 are to deposit a layer of the removal auxiliary layer between the low-dielectric normal layer and the wafer. The test method is to deposit a layer on the wafer with the stone shovel as the anti-S body sinking (four) fine 彡 氧 切 cut layer to remove the auxiliary layer. The receiver is on the private auxiliary layer. A layer of side angstroms is low! The second fr is wetted with a hydrofluoric acid solution for wet side _ seconds to remove the low-k dielectric layer and remove the auxiliary layer. Then, the residue after the measurement is measured. Thickness and credibility, the thickness of the residue is about 7 〇: help 1 2, there is: 曰 1 2 credibility is about 60.60~〇·85, probably because the auxiliary layer / has been removed Therefore, it is impossible to accurately measure the thickness of the residue. Then, another layer of oxidized stone formed by chemical vapor deposition process using Shi Xiyuan as a reactive gas source is deposited on the wafer as an auxiliary layer for removal. Subsequently, 13 twf is deposited. .doc/006 1290344 17661 A layer of 4700 lions is lightly layered on the wafer with a low dielectric constant dielectric layer thickness of about = AH (between H and Y, but the confidence is about 〇45~〇75 The removal of the auxiliary layer is not (4) except that it is clean, resulting in no correction. (7) ^The experimental method of Example 1 is to deposit on the wafer - phase four == the oxidation of the gas source formed by the chemical vapor deposition process" Privately remove the auxiliary layer. Next, deposit the layer-side dielectric constant dielectric layer on the removal auxiliary layer. The hydrofluoric acid solution, the type of money engraved _ sec' to remove the low-k dielectric layer and remove the butyl: = =] = the thickness and reliability of the retentate, the thickness of the residue below η angstroms, The reliability is 0.98. After that, in the wafer sinking = another layer, the oxidized stone layer formed by the chemical vapor phase process is treated with tetraethoxy Wei as the removal auxiliary layer. Then, ten低-^ 470, a low-k dielectric layer on the wafer, measuring its thickness = susceptibility, the second deposited low-k dielectric layer thickness is less than angstroms, the credibility is 0.98. Experimental Example! Added on-wafer after removing the auxiliary layer, removing the low-k dielectric layer and removing the auxiliary layer. Therefore, the low dielectric constant dielectric of the second deposition approaches a predetermined thickness. The experimental method of ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在Next, a low-constant layer of gay is deposited on the removal auxiliary layer. Then, wet-wetting is performed with a diluted hydrofluoric acid solution to remove the low-k dielectric layer and remove the auxiliary layer. Then, measure 14 • I29〇344t wf.doc/006 The thickness and reliability of the residue after etching, the thickness of the residue is below u. The reliability is 〇·98. Thereafter, another layer of a tantalum nitride layer formed by a chemical vapor deposition process using decane as a reactive gas source is deposited on the wafer as an auxiliary layer. Subsequently, a low dielectric constant dielectric of 47 angstroms was deposited on the aa circle to measure the thickness and reliability. The thickness of the second deposited low dielectric constant dielectric layer was less than the lateral angstrom. The degree is 〇·98. Experiment 2 added the removal of the auxiliary layer so that the removal of the low-k dielectric layer and the removal of the auxiliary layer had no residue on the wafer. Therefore, the actual thickness of the second deposited low dielectric constant dielectric layer can approach a predetermined thickness. It can be seen from the above-mentioned examples that the removal of the auxiliary layer used in the experimental examples 2, 2, after the removal of the low-k dielectric layer, the wafer can be cleaned without residue, and the second deposition The actual thickness of the low-k dielectric layer can be accurately approximated to a predetermined thickness. Therefore, from the experimental results, it can be known that the preferred removal auxiliary layer is an oxidized dream layer formed by a chemical vapor deposition process using a tetraethoxy stone gauge as a reactive gas source, and a chemical gas reduction system by a heterogeneous reaction. Finely divided nitride layer. In summary, the semiconductor machine test method used in the present invention has at least the following advantages: ^ The test wafer used in the test machine forms a low dielectric constant dielectric, and first forms a removal drain layer, so that the crystal There is not a large amount of residue remaining in the low dielectric read dielectric layer on the circle. After the removal of the auxiliary layer is removed, the wafer can be reused in the testing of the semiconductor submount. 2. Used test wafers 'Remove the low-k dielectric layer and remove the help layer. The deposition layer is then removed and a low dielectric dielectric layer of 1290344 17661 twf.doc/006 is deposited. The second deposition of the low-k dielectric layer thus reuses the test wafer without affecting the measurement and reducing the cost of the wafer. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to be a part of the present invention, and the invention may be modified and modified without departing from the spirit of the invention. The scope of the patent application is defined as ', [figure room 5 brothers and sisters] '' face view FIG. 1 is a cross-sectional view of the film layer structure according to the embodiment of the present invention. A low dielectric suspension number as shown in one embodiment; a cross-sectional view of a method of removing an I electrical layer. Fig. 3 is a view showing a method of testing a twisted yarn according to the present invention. [Main component symbol description] 100, 200: Wafer 110: film structure 112, 210 · Removal of auxiliary layers 114, 220: low dielectric constant dielectric layers S300, S31, S320, S33〇: Step number 16

Claims (1)

• I29034t—10. Patent application scope: 1. A film structure, which is disposed on a wafer and is suitable for testing in a semiconductor machine. The film structure includes: a removal auxiliary layer; and a low-level interface A dielectric constant dielectric layer is disposed on the removal auxiliary layer. 2. The film structure according to claim 1, wherein the removal auxiliary layer comprises cerium oxide formed by a chemical vapor deposition process using tetraethoxy zephyr (TEOS) as a reaction gas source. Floor. 3. The film structure of claim 2, wherein the chemical vapor deposition process comprises a plasma enhanced chemical vapor deposition process. 4. The film structure of claim 1, wherein the removal auxiliary layer comprises a nitride layer formed by a chemical vapor deposition process using decane (SiH4) as a reactive gas source. 5. The film structure as described in item 1, wherein the conductor machine comprises a chemical vapor deposition machine. Λ 6· As claimed in the patent scope of item i, the material of the dielectric constant dielectric layer of the basin is carbon cut, applied by the United States;; Division (Applied Black Diamond ^ μ M The c〇ral material produced by the company (N〇vellus), the film structure described in the patent of the round package, which makes the method of removing the crystal/two=2^ dielectric layer suitable for shifting Except that the 5U_low dielectric constant is set to the low dielectric constant dielectric layer before θ, it seems that no auxiliary layer is formed in the core, and then 17 I29〇3liitwf.doc/ 〇〇6 The low-k dielectric layer. 9. The private method for dissolving the low-k dielectric layer as described in Item 8 Wei (TE (6), the reaction gas is coarsely sourced - the chemical vapor deposition is formed by the oxidized stone - Xi Xi 10 · The sum of the low dielectric constant dielectric layer as described in claim 9 of the scope, the method Chemical vapor deposition process includes Chemical vapor deposition process. κ S孓 U U · as described in claim 8 of the low dielectric constant dielectric layer 'where the removal of the auxiliary layer including Wei Qing 4) as a reaction source of bile source - chemical vapor deposition process - nitrite layer. [12] The method for privately dividing a low-k dielectric layer as described in claim 8 of the patent application, wherein the method of disposing the low-k dielectric layer comprises a wet-type method. , eve 13 · as claimed in the patent scope * 12 low dielectric constant dielectric layer In addition to the square, the etching solution used in the wet type engraving method includes fluoric acid. The method for removing the low-k dielectric layer as described in claim 8 of the patent application, wherein the low-k dielectric layer is turned into a carbon carbide, and the US Applied Materials Corporation Applied Material) Diamond material produced by American Novo Systems Co., Ltd. (Coral material produced by Ν_ιι. Raw 15 · The method of removing low dielectric constant dielectric as described in claim 8 of the patent application, Wafer-packed wafers. (3) 18 • 12%3 to twf.doc/006 16. A test method for a semiconductor machine, including: providing a wafer; forming a removal auxiliary layer on the wafer; Forming a low-k dielectric layer of a predetermined thickness on the removal auxiliary layer; measuring an actual thickness of the low dielectric constant dielectric layer; Comparing the predetermined thickness with the actual thickness to determine whether the deposition machine is functioning normally; and removing the removal auxiliary layer from the low dielectric constant dielectric layer. 17. The tester of the semiconductor machine according to claim 16, wherein the removal auxiliary layer comprises a tetrakis-oxygen decane (TE〇s) as a reaction gas source-salt-chemical IU-mesh deposition process Qing Cheng's - oxidized stone layer. 18. The method of testing a semiconductor machine according to claim 17, wherein the chemical vapor deposition process comprises a plasma enhanced phase deposition process. ” 19. The test device of the semiconductor machine described in claim 16 of the patent application, wherein the removal of the auxiliary layer comprises a nitridation formed by a chemical vapor deposition process using Weiqing 4) as a reactive gas source.矽 layer. 2. The method of testing a semiconductor machine as described in claim 16 of the patent application, wherein the method of removing the low dielectric constant dielectric layer and the removing the auxiliary layer comprises a wet method. The method of the semiconductor machine of claim 2, wherein the etching solution used in the wet type method comprises dilute hydrofluoric acid. 19 I29〇3ij ltwf.doc/006 22. The method of the semiconductor machine of claim 16, wherein the semiconductor machine comprises a chemical vapor deposition machine. • A test method for a semiconductor machine as described in claim 16 wherein the low dielectric constant dielectric layer is made of tantalum carbide and is produced by the United States and Applied Materials. Diamond material or Coral material produced by Novellus, USA. %24. The method of testing a semiconductor machine according to claim 16, wherein the wafer comprises a germanium wafer. 20