TWI287854B - Semiconductor device with transistors and fabricating method thereof - Google Patents
Semiconductor device with transistors and fabricating method thereof Download PDFInfo
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- TWI287854B TWI287854B TW094134286A TW94134286A TWI287854B TW I287854 B TWI287854 B TW I287854B TW 094134286 A TW094134286 A TW 094134286A TW 94134286 A TW94134286 A TW 94134286A TW I287854 B TWI287854 B TW I287854B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 7
- 239000004020 conductor Substances 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- -1 monooxyethyl Chemical group 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004098 Tetracycline Substances 0.000 description 1
- PYFMJGIPSIGPHQ-UHFFFAOYSA-J [C+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [C+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O PYFMJGIPSIGPHQ-UHFFFAOYSA-J 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000021384 green leafy vegetables Nutrition 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002110 nanocone Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229960002180 tetracycline Drugs 0.000 description 1
- 229930101283 tetracycline Natural products 0.000 description 1
- 235000019364 tetracycline Nutrition 0.000 description 1
- 150000003522 tetracyclines Chemical class 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
1287854 九、發明說明： 【發明所屬之技術領域】 本發明係關於-種半導體裝置，特献—種具多個電晶體之 半導體裝置及其製造方法。 【先前技術】 、 錢輯電财，電路的基本架構為反向H (inverter)，因此 ‘ 不_疋互補金屬氧化半導體（Complementay Metal Oxide # Semiconductor ; CMOS)反向器、N型金屬氧化半導體（NM〇s) 反向裔、P型金屬氧化半導體（PMOS)反向器或是阻性負載反向 器（resistive load inverter)等元件所組成的電路，皆有可能需要源 極對閘極（source-to-gate )，即係以緩衝器或源極/汲極輸出作為下 一階層的輸入）、源極對源極/汲極或是閘極對閘極（例如··反向 器單元）的相互連接之需求。在傳統的電路製作方法中，是以建 立導孔（via)的方式來完成交互連結（interconnecti〇n)。 _ 傳統上，交互連結的形成方式如下。 於一習知技術中，係透過光蝕刻技術(Photolithography)和氧 電漿蝕刻（oxygen plasma etching)以圖案化聚乙烯基咔唑 (polyvinylpyrrolidone ; PVP)薄膜，藉以產生兩交互連結層間的 ^孔。然後’藉由利用蒸鐘或喷墨製程，將小分子或高分子有機 半導體材料，圖案化於電晶體之源極與汲極間，以製成有機電晶 體。（睛參考「H. Klauk，M· Halik，U· Zschieschang，F. Eder G.
Schmid, and C. Dehm? ^Pentacene organic transistors and ring 5 1287854 oscillators on glass and on flexible polymeric substrates^ Applied Physics Letters，Vol· 82, Issue 23, P4175-P4177, 9 June 1996」） 另一習知技術則係在欲形成交互連結的部位預先印製碳墨 (carbon ink)，然後再完成元件。（請參考「A. Knobloch，A· Manuelli， A. Bemds, and W. Clemens, uFully printed integrated circuits from solution processable polymers," Journal of Applied Physics, Vol. 96, Issue 49 P2289-P2291, 15 August 2004 j) 再一習知技術則係在將金屬線（metal line)設置在基版兩 側’再以導孔相連。（请參考「Β· Crone, A. Dodabalapur，Y.-Y. Lin， RW Filas，Z. Bao, A· LaDuca，R· Sarpeshkar，HE Katz，W· Li”
Lcivge-sccile completnentary integrated circuits based on organic inms加ors，” Nature，Vol. 403, P521-P523, 2000」） 於另一習知技術中’則係利用蔽餐遮罩（shadow mask)圖案 化技術來製作。（請參考「PF Baude，DA Ender，MA H^e，TW Kelley, DV Muyres? and SD Theiss, ^Pentacene^based rcidio-frequency identificatioyi circuitry^ Applied Physics Letters^ Vol. 82, Issue 22, P3964-P3966, 2 June 2003」） 然而，在有機電子中，導孔的製作需要透過雷射鑽孔（laser drill)，或是透過光蝕刻技術和電漿蝕刻來達成，如此一來，將大 幅增加成本與複雜度。與有機電子所訴求的簡單與低成本，大相 逕庭。 【發明内容】 鑒於以上的問題，本發明的主要目的在於提供一種具多個電 1287854 a曰體之半導體裝置及其製造方法，藉以降低整體電路中導孔的需 求0 因此，為達上述目的，本發明所揭露之半導體裝置的製造方 法’包括有下列步驟：提供一基板；形成一第一導電層於基板上， 其巾此第—導電層包括有第-電極區和第二電極區，其中第一電 '極區電性連結第二電極區中之一，·形成一第-半導體層以覆蓋第 ‘二電極區；形成-介電層以覆蓋第一電極區和第一半導體層，·形 籲成-第二半導體層於對應第一電極區之介電層上；以及形成一第 二導電層，其中此第二導電層包括有對應第二電極區而位於介電 層上的第三電極區，和對應第—電極區而位於第二半導體層上的 方、露—種具多個電綠之半導置峨 驟:提供一基板’·形成-第-導電層於勤 、、中㈣-導電層包括有第—f極區 第一半導體層以覆蓋第二電極區；形成_ = ==ΤΓ半導體層於對應第 “ 1極⑸位上 其中此第二導電層包括有:^ 應弟一冤極&而位於介電層上 極… 1287854 一氧乙基σ塞吩· t對本乙烯石黃酸（polyethylene dioxythiophene: polysterene sulfonic acid ; PEDOT:PSS)等導電高分子，再或者係 氧化銦錫（indium tin oxide ; ITO)或氧化銦鋅（IZ0)等導電氧 化物。最佳的第一導電層之材料除了選擇高導電率之材料外，尚 須考慮其與第一半導體層及整個元件的匹配度。 形成第一半導體層130，以覆蓋第二電極區124、126，如第 1C圖所示。
此第一半導體層之材料可包含電洞傳輸材料（即，P型半導 體層）或電子傳輸材料（即，N型半導體層）。於此，電洞傳輸材 料可為五苯（Pentaeene)、聚(3·㈣吩）（pGly(3_hexyi脇phene ; P—3HT)或其衍生物等p型材料，或者係於p型材料狀有碳奈米 管（Car^nNanot^e)、矽奈米線（Sinan〇wire)、碳化石卿奈米 錐、石夕碳氮奈餘或氮她奈鱗·極材料 傳輸材射^ hexadeeafl_phthab_^ =CDI或其衍生物㈣型材料，或者係於n型材料混人有碳奈米 ΐ卜m線、碳化雜枝雜、傾氮奈綠錢她奈米錐 寺陰極材料之材料。 的上η形成介騎14G於第—電極區122和第—半導體層130 層⑽。’ 4 m騎^換句賴，於此可全面軸長一介電 此介電層之介電常數係大於2·5。 苴 g| (ργΑΝ Λ ^ 〃材枓可為聚乙稀 )(Ρ則絲丙烯睛（PAN)等高分子之絕緣 1287854 料’=::需求_卜以形成所需之結構。 需求利用傳統石版印刷遮罩來施加圖案，以進後依實際 成所需之第—導電層和第二導電層之結構。此，進而形 技術來達朗魏之需求。 /、可利用其他 此外’為求方便說明，於此僅以形成具二電晶體 置進行說明，然而亦透過相同齡而形成具有多 體裝置，換句話說’將多個電晶體需連結之電極形成於:二導 欲相互連接之端點加以連結，因此即可大騎低 整體電路中導孔的需求，進轉低成本。 雖然本發_前述讀佳實關鑛如上，離麟用以限 定本發明’任何«相像技藝者，在不脫離本發明之精神和範圍 内田可作些許之更動與潤飾，因此本發明之專利保護範圍須視 本說明書所附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1A〜1F圖係為說明根據本發明一實施例之半導體裝置的 製造方法的截面圖； 第2圖係為第1B圖之完整結構的俯視圖；以及 第3圖係為於弟1F圖之完整結構的俯視圖。 【主要元件符號說明】 ho..............................基板 120..............................第一導電層 12 1287854 122..............................第一電極區 124.........................·····第二電極區 126..............................第二電極區 130..............................第一半導體層 140..............................介電層 • 150..............................第二半導體層 、 160..............................第二導電層 162.........…… ..............第三電極區 164..............................第四電極區 166..............................第四電極區 13
Claims (1)
1287854 十、申請專利範圍·· 1·種轉體裝置的製造方法，包括有下列步驟： 提供一基板； 形成-第-導電層 傲上A弟一導電層包括 有·· 第一電極區 :以及 至少 •電極區； 參 形成一·’ ft 覆聽第—雜區和該^ 上；以及 形成一第二導 第三電 上，·以及 導體層於對應轉—電極區 半導體層； 之該介電層 電層，射該第二導電層包括有： 區’對應該第二電極區而位於該介電層 至夕一第四電極區，對應該第-電極區而位於該第二 半導體層上 2· 士 專，_丨項所述之轉觀㈣製造方法，其中該 第寿Λ第—電極區係分別作為-閘極，且該第二和該第四電 極區係分別作為一源極級極。 3·如申請專利範圍第1項所述之半導體裝置的製造方法，其中該 基板之材料係為一種絕緣材料。 14
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW094134286A TWI287854B (en) | 2005-09-30 | 2005-09-30 | Semiconductor device with transistors and fabricating method thereof |
| US11/363,928 US20070077690A1 (en) | 2005-09-30 | 2006-03-01 | Semiconductor device with transistors and fabricating method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW094134286A TWI287854B (en) | 2005-09-30 | 2005-09-30 | Semiconductor device with transistors and fabricating method thereof |
Publications (2)
| Publication Number | Publication Date |
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| TW200713498A TW200713498A (en) | 2007-04-01 |
| TWI287854B true TWI287854B (en) | 2007-10-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW094134286A TWI287854B (en) | 2005-09-30 | 2005-09-30 | Semiconductor device with transistors and fabricating method thereof |
Country Status (2)
| Country | Link |
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| US (1) | US20070077690A1 (zh) |
| TW (1) | TWI287854B (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2009182095A (ja) * | 2008-01-30 | 2009-08-13 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
| US20100239871A1 (en) * | 2008-12-19 | 2010-09-23 | Vorbeck Materials Corp. | One-part polysiloxane inks and coatings and method of adhering the same to a substrate |
| CN114674902B (zh) * | 2022-05-27 | 2022-08-23 | 太原理工大学 | 一种超低限检测c反应蛋白的薄膜晶体管及其制备方法 |
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| US6067062A (en) * | 1990-09-05 | 2000-05-23 | Seiko Instruments Inc. | Light valve device |
| CA2306384A1 (en) * | 1997-10-14 | 1999-04-22 | Patterning Technologies Limited | Method of forming an electronic device |
| JP2000150861A (ja) * | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
| US7301802B2 (en) * | 2003-06-09 | 2007-11-27 | Nantero, Inc. | Circuit arrays having cells with combinations of transistors and nanotube switching elements |
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2005
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| Publication number | Publication date |
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| TW200713498A (en) | 2007-04-01 |
| US20070077690A1 (en) | 2007-04-05 |
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