TWI285576B - Conductive polishing article for electrochemical mechanical polishing - Google Patents
Conductive polishing article for electrochemical mechanical polishing Download PDFInfo
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- TWI285576B TWI285576B TW093116351A TW93116351A TWI285576B TW I285576 B TWI285576 B TW I285576B TW 093116351 A TW093116351 A TW 093116351A TW 93116351 A TW93116351 A TW 93116351A TW I285576 B TWI285576 B TW I285576B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
1285576 玖、發明說明: 【發明所屬之技術領域】 本發明係關於一種用來將一基材表面平坦化的製造 物及設備。 【先前技術】 次四分之一公釐多層金屬為下一世代的超大型積體 電路(ULSI)的主要關鍵技術之一。此技術的核心所在之多 層内連線結構需要將形成在高深寬比孔内,包括接點,介 層孔’接線及其它特徵結構在内,的内連線特徵結構平坦 化。這些内連線特徵結構之可靠的形成對於ULSI的成功 及對於提高每一基材或晶粒上的電路密度與品質的持續努 力而言是非常地重要的。 在積體電路及其它電子元件的製造中,介電材質被沉 積於一基材的表面上或從該表面被去除掉。導體,半導體, 及介電材質可用多種技術來沉積。在現代製程中常用的沉 積技術包括物理氣相沉積(PVD)其亦被稱為濺鍍,化學氣 相沉積(CVD),電漿強化的化學氣相沉積(Pecvd),及電 化學電鍍(ECP)。 當物質層依序地被沉積及去除時,基材的最上層表面 的整個面上會呈現非平面,因而需要平坦化。將一表面平 坦化,或「研磨」一表面,是將物質從基材的表面上去除 掉用以形成一大致均勻,平坦的表面的一種處理。平坦化 在去除不想要的秒面拓樸及表面缺陷,如粗糙的表面,結 3 1285576 塊的物 很有用 的沉積 供後續 { 坦化中 一泥漿 除掉。- 在一載 觸的位 以迫擠 對於該 基材的 化學作 除掉。 其具有 題。例 鑲後或 處理中 填充。 在銅鎮 即被保 上。銅未 質’結晶格損壞,到痕及受污染的層或物質,上是 的。平坦化在藉由去除掉過多被用來填充特徵結構 物而形成特徵結構於一基材上及提供一均勻的表面 的金屬化及處理之用等方面亦是很有用的。 匕學機械平坦化,或化學機械研磨(CMp),是基材平 經常用到的技術。CMP使用一化學組成,典型地為 或其它的流體媒介,來選擇性地將物質從基材上去 在傳統的CMP技術中,一基材載具或研磨頭被安裝 具組件上且位在與一 CMP設備中的一研磨墊相接 置°該載具頭組件提供可控制的壓力於該基材上用 基材頂抵該研磨墊。該研磨墊被一外部的驅動力相 基材移動。該CMP設備實施一研磨或搓揉運動於該 表面與該研磨墊之間,同時施加一研磨組成來進行 用及/或機械作用以及將物質從該基材的表面上去 積體電路製造中經常被使用的一種物質為銅,因為 所想要的電子特性。然而,銅具有其特殊的製造問 如,銅很難形成圖案及蝕刻且新的處理與技術,如 雙鎮嵌·處理’被用來形成銅基材特徵結構。在镶喪 ,一特徵結構被界定於一介電材質中及之後被銅所 具有低介電常數,如小於3者,的介電材質被使用 嵌結構的製造中。阻障層材質在銅材質的沉積之前 形地沉積在形成於該介電層上的特徵結構的表面 f質然後被沉積於該阻障層及周圍區域之上。然而,1285576 发明, DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to an article and apparatus for planarizing a surface of a substrate. [Prior Art] The second quarter of a multi-layer metal is one of the key technologies of the next generation of ultra-large integrated circuits (ULSI). The multi-layer interconnect structure at the heart of this technology requires planarization of the interconnect features that are formed in the high aspect ratio holes, including contacts, vias, and other features. The reliable formation of these interconnect features is very important for the success of ULSI and for continuous efforts to improve circuit density and quality on each substrate or die. In the fabrication of integrated circuits and other electronic components, dielectric materials are deposited on or removed from the surface of a substrate. Conductors, semiconductors, and dielectric materials can be deposited using a variety of techniques. Deposition techniques commonly used in modern processes include physical vapor deposition (PVD), also known as sputtering, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (Pecvd), and electrochemical plating (ECP). ). When the substance layers are sequentially deposited and removed, the entire surface of the uppermost surface of the substrate is rendered non-planar and thus needs to be planarized. Flattening a surface or "grinding" a surface is a treatment that removes material from the surface of the substrate to form a substantially uniform, flat surface. Flattening In the removal of unwanted second-surface topography and surface defects, such as rough surfaces, the junction of the 3 1285576 block is useful for deposition in the subsequent {cannedness of a mud removal. - Remove the chemical action on the substrate at the point of contact. It has the problem. Example Fill in or after processing. In the town of copper is guaranteed. The copper is not damaged, the crystal lattice is damaged, and the traces and contaminated layers or substances are on. Flattening is also useful in removing metallization and processing that is used to fill the features to form features on a substrate and to provide a uniform surface. Dropout mechanical flattening, or chemical mechanical polishing (CMp), is a technique often used for substrate flattening. CMP uses a chemical composition, typically or other fluid medium, to selectively remove material from the substrate. In conventional CMP techniques, a substrate carrier or polishing head is mounted on the component and positioned A polishing pad in the CMP apparatus is coupled to the substrate. The carrier head assembly provides a controlled pressure on the substrate against the polishing pad. The polishing pad is moved by an external driving force substrate. The CMP apparatus performs a grinding or rubbing movement between the surface and the polishing pad while applying a polishing composition for performing and/or mechanically acting and removing material from the surface of the substrate. One substance used is copper because of the desired electronic properties. However, copper has its special manufacturing problems such as copper being difficult to form patterns and etching and new processes and techniques such as double-doping processing are used to form copper substrate features. In the case of a funnel, a feature structure is defined in a dielectric material and is followed by a low dielectric constant of copper. For example, a dielectric material of less than 3 is used in the fabrication of the embedded structure. The barrier layer material is deposited on the surface of the features formed on the dielectric layer prior to deposition of the copper material and then deposited over the barrier layer and surrounding regions. however,
4 1285576 特徵結構的銅填充常會在基材表面上形成過多的銅材質, 其必需被去除掉用以形成一被銅填充的特徵結構於該介電 層上並準備該基材表面以供後續處理之用。 在研磨銅材質上的一項挑戰為,導電材質與阻障層之 間的介面通常是非平面的且殘留的銅材質被存留在由該非 明面的介面所形成的不規則部分中。又,該導電材質及陴 障材質通常是以不同的速率從基材上被去除掉,以上兩種 情形都會造成過多的導電材質被留下來而在基材表面上形 成殘留物。因此,隨著形成於基材表面上的特徵結構的密 度及大小的不同,基材表面上會具有不同的表面拓樸。銅 材質延著此基材表面上之不同的表面拓樸其被去除的速率 亦是不同,而這將會讓基材表面上之有效的銅材質去除及 基材表面的最終平坦度很難達成。 將所有不想要的銅材質從基材表面上去除掉的一個 解決方法為過度研磨該基材表面Q然而,某些材質的過度 研磨會造成拓樸上缺陷的形成,如在特徵結構中的下凹及 凹陷,其被稱為盤形化,或介電材質的過度去除,其被稱 為侵蝕。因盤形化或侵蝕所造成的拓樸上的缺陷會進一步 導致額外材質,如在其下的阻障層材質,之不均勻的去除, 且產生一具有比所想要的研磨品質還差的基材表面。 銅表面研磨的另一項問題是因為使用低介電常數(k) 的介電材質來在基材表面上形成銅鑲嵌而產生的。低七介 電材質,如摻雜了碳的氧化矽,在傳統的研磨壓力(即, 6pSi),其稱為下壓力,之下會變形或龜裂,這將會對基材 1285576 的研磨品質有不利的影響及對於元件的形成有不良的影 響。例如,該基材與研磨墊之間的相對旋轉運動會在基材 表面上誘發一剪力並將該低]£材質變形而形成拓樸上=缺 陷’這將對於後續的研磨有不利的影響。 研磨在低介電常數材質中的鋼的一個解決之道為使 用電機械研磨(ECMP)技術來研磨銅。ECMp技術藉吉電化 學分解同時用比傳統CMP處理小的機械研磨力研磨該基 材而來將導電材質從基材表面上去除掉。該電化學分解是 藉由施加一偏壓於一陰極與基材表面之間來實施的,用以 將導電材質從基材表面上移除至周圍的界解液中。 在一 ECMP系統的實施例中,該偏壓是藉由在一基 材支撐裝置上與基材表面成電氣聯通的一圈導電接點來施 加的。然而,該接點環已被觀察到在基材表面上會表現出 不均勻的電流分布,而導致不均勻的分解結果。機械研磨 疋藉由將該基材設置在與傳統的研磨墊接觸的位置且提供 匕們之間的相對運動來實施的。然而,傳統的研磨墊會限 制電解液流到基彩的表面上《此外,該研磨墊可能包含絕 緣材質而這將會干擾到施加偏壓至基材表面上並導致在該 基材表面上的導電材質的一不均勻的分解。 因此’對於一種用於基材表面上的導電材質的去除之 改良的研磨物存在著需求。 ’ 【發明内容】 本發明大體上提供一種製造物及一種用來將一基材上 6 1285576 的層平坦化之設備,其使用了電化學沉積技術、電化學分 解技術、研磨技術及它們的組合。 在一態樣中,一種用於研磨一基材之研磨物包括一本 體’其具有一表面適用以研磨該基材以及至少一導電元 件’該導電元件係至少部分被埋設在本體内❶該導電元件 可包括數個以一導電材料塗覆之纖維、一導電填料或其結 合’其可設置於黏結劑中。該導電元件可包括一以導電材 料塗覆之混雜纖維,其並至少部分埋設於該本體中、一以 導電材料塗覆之合成纖維、導電填料、或其混合物以及一 黏結劑,其係部分埋設於該本體中、或其混合物。該導電 元件可具有一接觸面,其延伸超過一由該研磨表面所界定 之平面,並可包括一線圈、一或多個迴圈、一或多個線股 (strand)、一混雜纖維材料或其混合物。該研磨物上可形成 數個穿孔以利物質從其間流過。 於另一態樣中,係提供一種用來處理一基材表面之研 磨物’例如沉積於該基材上之導電層。該研磨物包括一本 體’其具有至少數個以導電材料塗覆之纖維部、數個導電 填料或者其結合,且其係適用於研磨該等基材。該研磨物 上可形成數個穿孔及數個溝槽,以利物質從其間流過。 於又一態樣中,該等研磨物可置於一設備中以處理一 基材,該設備包括一承盤、一置於該承盤中之可滲透盤, 該研磨物或製造物係置於該可滲透盤上、一置於該位於該 可滲透盤及該承盤底部間之承盤内的電極,以及一製程期 間適用於維持該基材之研磨頭。 Ϊ285576 於另一態樣中,該等研磨物可以一用於處理一基材的 方法作為一導電研磨物,該方法包括提供一含有一圍封物 之設備;將一導電研磨物置於該圍封物中;以一近約20 加崙/每分(GPM)的流率提供一導電溶液至該圍封物;將該 基材定位於該導電溶液中鄰近該導電研磨物處;將該基材 之一表面於導電溶液中接觸該導電研磨物;於一電極及該 導電研磨物間施予一偏壓;以及移除該基材表面之至少一 部份表面。 於本發明之另一實施例中,一用於處理一基材之研磨 物至少包括一插入層,連接於一介電支撐層(support layer) 及一導電層之間。該導電層具有一暴露表面,適於研磨一 基材。該支撐層之硬度小於導電層,且該插入層之硬度大 於該支撐層。4 1285576 The copper filling of the feature structure often forms too much copper on the surface of the substrate, which must be removed to form a copper-filled feature on the dielectric layer and prepare the surface for subsequent processing. Use. One challenge in grinding copper materials is that the interface between the conductive material and the barrier layer is typically non-planar and the residual copper material is retained in the irregularities formed by the non-clear interface. Moreover, the conductive material and the barrier material are usually removed from the substrate at different rates. In both cases, too much conductive material is left behind to form a residue on the surface of the substrate. Therefore, as the density and size of the features formed on the surface of the substrate are different, the surface of the substrate will have a different surface topography. The rate at which the copper material is applied to different surface topography on the surface of the substrate is also different, which will make the effective copper removal on the surface of the substrate and the final flatness of the substrate surface difficult to achieve. . One solution to remove all unwanted copper material from the surface of the substrate is to over-grind the surface of the substrate. However, excessive grinding of certain materials can cause the formation of defects on the topography, such as under the feature structure. Recesses and depressions, which are referred to as disc formation, or excessive removal of dielectric materials, are referred to as erosion. Topological defects caused by disc formation or erosion can further lead to additional materials, such as the barrier material underneath, uneven removal, and produce a poorer quality than desired. The surface of the substrate. Another problem with copper surface grinding is the use of dielectric materials with low dielectric constant (k) to create copper inlays on the surface of the substrate. Low seven dielectric materials, such as carbon doped yttrium oxide, under conventional grinding pressure (ie, 6pSi), which is called downforce, will deform or crack, which will grind the substrate 1285576 It has adverse effects and has an adverse effect on the formation of components. For example, the relative rotational motion between the substrate and the polishing pad induces a shear force on the surface of the substrate and deforms the low material to form a topography = defect which will adversely affect subsequent grinding. One solution to grinding steel in low dielectric constant materials is to use electromechanical grinding (ECMP) technology to grind copper. The ECMp technology removes the conductive material from the surface of the substrate by chemically decomposing and simultaneously grinding the substrate with a mechanical grinding force smaller than that of a conventional CMP process. The electrochemical decomposition is carried out by applying a bias between a cathode and the surface of the substrate to remove the conductive material from the surface of the substrate into the surrounding boundary solution. In an embodiment of an ECMP system, the bias voltage is applied by a loop of conductive contacts in electrical communication with the surface of the substrate on a substrate support device. However, the contact ring has been observed to exhibit a non-uniform current distribution on the surface of the substrate, resulting in uneven decomposition results. Mechanical grinding is carried out by placing the substrate in contact with a conventional polishing pad and providing relative motion between them. However, conventional polishing pads can limit the flow of electrolyte to the surface of the base color. "In addition, the polishing pad may contain an insulating material which would interfere with the application of a bias to the surface of the substrate and result in a surface of the substrate. An uneven decomposition of the conductive material. Therefore, there is a need for an improved abrasive for the removal of conductive materials on the surface of a substrate. SUMMARY OF THE INVENTION The present invention generally provides an article of manufacture and an apparatus for planarizing a layer of 6 1285576 on a substrate using electrochemical deposition techniques, electrochemical decomposition techniques, grinding techniques, and combinations thereof. . In one aspect, an abrasive for polishing a substrate includes a body having a surface adapted to polish the substrate and at least one electrically conductive element that is at least partially embedded in the body. The component may comprise a plurality of fibers coated with a conductive material, a conductive filler or a combination thereof which may be disposed in the binder. The conductive element may include a hybrid fiber coated with a conductive material, and at least partially embedded in the body, a synthetic fiber coated with a conductive material, a conductive filler, or a mixture thereof, and a binder partially embedded. In the body, or a mixture thereof. The electrically conductive element can have a contact surface that extends beyond a plane defined by the abrasive surface and can include a coil, one or more loops, one or more strands, a hybrid fiber material, or Its mixture. A plurality of perforations may be formed in the abrasive to facilitate the flow of material therethrough. In another aspect, a abrasive for treating a surface of a substrate, such as a conductive layer deposited on the substrate, is provided. The abrasive comprises a body having at least a plurality of fibrous portions coated with a conductive material, a plurality of electrically conductive fillers or combinations thereof, and which are suitable for grinding the substrates. A plurality of perforations and a plurality of grooves may be formed in the abrasive to facilitate the flow of material therebetween. In still another aspect, the abrasives can be placed in a device to process a substrate, the device comprising a carrier, a permeable disk disposed in the carrier, the abrasive or article of manufacture On the permeable plate, an electrode disposed in the retainer between the permeable plate and the bottom of the retainer, and a polishing head adapted to maintain the substrate during a process. In another aspect, the abrasives can be used as a conductive abrasive for treating a substrate, the method comprising: providing a device containing a seal; placing a conductive abrasive on the enclosure Providing a conductive solution to the enclosure at a flow rate of approximately 20 gallons per minute (GPM); positioning the substrate adjacent to the conductive abrasive in the conductive solution; A surface is in contact with the electrically conductive abrasive in the electrically conductive solution; a bias is applied between the electrode and the electrically conductive abrasive; and at least a portion of the surface of the surface of the substrate is removed. In another embodiment of the invention, an abrasive for processing a substrate includes at least an interposer layer coupled between a dielectric support layer and a conductive layer. The conductive layer has an exposed surface adapted to grind a substrate. The support layer has a hardness less than that of the conductive layer, and the hardness of the intervening layer is greater than the support layer.
於本發明之又一實施例中,一用於處理一基材之研磨 物至少包括一插入層,其連接至一導電層及一支撐層間。 該導電層係以至少一孔隙穿通,該插入層及支撐層包括一 形成於該導電層中之一第一孔洞,其直徑大於形成於該插 入層及該支撐層中之一第二孔洞的直徑。 【實施方式】 本文中所使用的子及§司應被給予熟悉此技藝者一般 習知的意義,除非它們被另外加以定義。化學機械研磨應 包括但並不侷限於藉由化學作用,機械作用,或化學與機 械做用的組合來研磨一基材表面。電研磨應包括,但並不 8 1285576 偈限於,藉由I α斑 材平坦化。匕干作用的施加,如陽極分解,來將一基 電化學機械研磨(ECMP)應包括,但 由施加電化學作 个侷限於,藉 組合用以將物質從一 碼作用兩者的 電化學機姑去除來將—基材平坦化。 電化予機械電鍵處理(職pp)應包括 於,電化學地將物暂π接+ - 仁並不侷限 m ^ 質,儿積在一基材上且同時藉由雷彳h庳作 用,機械作用或雷仆庳命μ 稽由電化學作 被沉積的物質平】:機械作用兩者的組合的施加來將 陽炼二極分解應包括,但並不侷限於,直接或間接施加一 至-基材其造成導電材質從一基材表面被去除掉 且纟胃圍的電解液中的結I。研磨表面係廣義的界定為 製造物的部分,其於製程期間係至少部分接觸一基= 面或電力將製造物耦接至一基材表面(無論是直接接觸或 透過一導電媒介而間接接觸)。 研磨設備 第Ϊ圖顯示一處理設備100其具有至少一適合電化學 沉積及化學機械研磨的站,如一電化學機械研磨(ECMp) 站102及至少一傳統的研磨站1〇6其被設置在一單一的平 台或工具上。一種可受惠於本發明的研磨工具為由設在美 國加州Santa Clara市的Applied Materials公司所製造的 MIRRA®化學機械研磨機。 第1圖中該舉例性的設備100大體上包括兩個ECMp 1285576 站102以及一研磨站1〇6。該等站台可用於處理一基材表 面Y例如,一具有特徵定義形成其上並以一阻障層填充且 接著以導電材料置於該阻障層上之基#,其可以兩個 站102中的兩個步驟移除導電材料,藉由研磨站1〇6 移除該阻障層以形成一平坦化表面。 該舉例性的設備100大雙上包括一基座108其支樓一 或夕個ECMP站1〇2,一或多個研磨站1〇6,一輸送站11〇 及轉塔112^該輸送站110藉由裝載機械臂116將基材 114來回地輸送至該設備1〇〇。該裝載機械臂116典型地將 基材114輸送於輸送站11〇與一工廠介面12〇之間,該工 廢介面包括一清潔模組122,一度量裝置1〇4及一或多個 基材貯存匡118。該度量裝置104的一個例子為由設在美 國亞歷桑那州魔凰城的Nova Measuring Instruments公司 斤氛 的 NovaScamTM Integrated Thickness Monitoring system。In still another embodiment of the invention, an abrasive for treating a substrate includes at least one intervening layer coupled between a conductive layer and a support layer. The conductive layer is penetrated by at least one of the pores, and the insert layer and the support layer comprise a first hole formed in the conductive layer, the diameter of which is larger than a diameter of the second hole formed in the insert layer and the support layer . [Embodiment] The sub- and § divisions used herein should be given the meanings generally known to those skilled in the art unless they are otherwise defined. Chemical mechanical polishing should include, but is not limited to, grinding a substrate surface by chemical action, mechanical action, or a combination of chemical and mechanical action. Electro-grinding should include, but not limited to, 1 1285576 平坦, by Iα plaque flattening. The application of a spin-drying action, such as anodic decomposition, to include a group of electrochemical mechanical polishing (ECMP), but limited by the application of electrochemistry, by combining electrochemical machines that combine substances from one code to the other. The removal is to flatten the substrate. Electrochemical to mechanical key treatment (Op pp) should be included in the electrochemically π-contact of the object + - the kernel is not limited to m ^ quality, the product is accumulated on a substrate and at the same time by the action of thunder, mechanical action Or the application of a combination of mechanical action to decompose the dilute dipole should include, but is not limited to, direct or indirect application of a substrate to It causes the conductive material to be removed from the surface of a substrate and the junction I in the electrolyte surrounding the stomach. An abrasive surface is defined broadly as a portion of a article of manufacture that is at least partially in contact with a substrate during the processing process or electrically couples the article to a substrate surface (either in direct contact or indirect contact through a conductive medium). . The grinding apparatus section shows a processing apparatus 100 having at least one station suitable for electrochemical deposition and chemical mechanical polishing, such as an electrochemical mechanical polishing (ECMp) station 102 and at least one conventional grinding station 1-6 which is disposed in a On a single platform or tool. One type of abrasive tool that can benefit from the present invention is the MIRRA® chemical mechanical mill manufactured by Applied Materials, Inc., located in Santa Clara, California. The exemplary apparatus 100 in FIG. 1 generally includes two ECMp 1285576 stations 102 and a grinding station 1〇6. The stations can be used to treat a substrate surface Y, for example, a base having a feature defined thereon and filled with a barrier layer and then placed on the barrier layer with a conductive material, which can be in two stations 102 The two steps remove the conductive material and the barrier layer is removed by the polishing station 1〇6 to form a planarized surface. The exemplary device 100 includes a base 108, a branch or an ECMP station 1〇2, one or more grinding stations 1〇6, a transfer station 11〇, and a turret 112. The substrate 114 is transported back and forth to the apparatus 1 by a loading robot 116. The loading robot 116 typically transports the substrate 114 between the transfer station 11 and a factory interface 12A. The work waste interface includes a cleaning module 122, a metering device 1〇4 and one or more substrates. Store 匡118. An example of such a metrology device 104 is the NovaScamTM Integrated Thickness Monitoring system from Nova Measuring Instruments, Inc., located in Magic City, Arizona, USA.
或者’該裝載機械臂116(或工廠介面120)可將基材輸 送至一或多個其它處理工具(未示出),如一化學氣相沉積 工具’物理氣相沉積工具,蝕刻工具及類此者。 在一實施例中,該輸送站110包含至少一輸入緩衝站 124’ 一輸出緩衝站126,一輸送機械臂132,及一裝載杯 組件128。該裝載機械臂116將基材114置於該輸入缓衝 站124上。該輸送機械臂132具有兩個抓持器組件,每一 組件都具有一氣動抓持器指件抓住基材的邊緣。該輸送機 械臂132將基材114從該輸入緩衝站124舉起並旋轉該抓 10 1285576 持器及基材114用以將基材114移到該裝載杯組件128之 上,然後將基材114放下至該裝載杯組件128上。 該轉塔112支撐多個研磨頭130,每一研磨頭在處理 期間都裝著一基材1 1 4。該轉塔11 2將由磨頭1 3 0輸送於 該輸送站110,該一或多個ECMP站1〇2及該一或多個研 磨站1 0 6之間。一種可-受惠於本發明的轉塔1 1 2被揭示於Alternatively, the loading robot 116 (or factory interface 120) can transport the substrate to one or more other processing tools (not shown), such as a chemical vapor deposition tool, a physical vapor deposition tool, an etching tool, and the like. By. In one embodiment, the transfer station 110 includes at least one input buffer station 124', an output buffer station 126, a transport robot arm 132, and a load cup assembly 128. The loading robot 116 places the substrate 114 on the input buffer station 124. The transfer robot arm 132 has two gripper assemblies, each having a pneumatic gripper finger that grips the edge of the substrate. The transport robot 132 lifts the substrate 114 from the input buffer station 124 and rotates the grip 10 1285576 holder and substrate 114 for moving the substrate 114 onto the loading cup assembly 128, and then the substrate 114 Drop onto the loading cup assembly 128. The turret 112 supports a plurality of polishing heads 130, each of which houses a substrate 1 14 during processing. The turret 11 2 will be transported by the grinding head 130 to the transfer station 110, between the one or more ECMP stations 1〇2 and the one or more grinding stations 106. A turret 1 1 2 that can benefit from the present invention is disclosed
1 998年九月8日授予Tolies等人的美國專利第5,804,507 號中,該案藉由此參照而被併於本文中。 通常’該轉塔112被設置在該基座log的中央。該轉 塔112典型地包括多個臂138。每一臂138大體上支撐一 研磨頭130。第1圖中有一臂138沒有被示出用以能夠清 楚地看到輸送站11 0。轉塔11 2是可標記的,使得研磨頭 130可依據使用者所界定的順序被移動於站1〇2,106及輸 送站11 0之間。U.S. Patent No. 5,804,507, the entire disclosure of which is incorporated herein by reference. Typically, the turret 112 is placed in the center of the pedestal log. The turret 112 typically includes a plurality of arms 138. Each arm 138 generally supports a polishing head 130. An arm 138 is not shown in Figure 1 to enable a clear view of the transport station 110. The turret 11 2 is markable such that the abrading head 130 can be moved between the stations 1 〇 2, 106 and the transport station 110 in the order defined by the user.
通常,當基材114被設置在該ECMP站102或研磨站 106中時,研磨頭130收納該基材114。在設備1〇〇上之該 ECMP站1〇2與研磨站106的配置讓基材114能夠在被保 持在同一研磨頭130中的同時藉由將基材移動於站與站之 間而被依序地被電鍍或研磨。一種可被使用於本發明中的 研磨頭為由設在美國加州 Santa Clara 市的 Applied Materials公司所製造的TITAN HEADTM基材載具。 可使用在本文中所描述的研磨設備100中的研磨頭 130的例子被描述於2000年二月25曰授予Shendon等人 的美國專利第6,024,630號中,該案藉由此參照而被併於 11 1285576 本文中。Typically, the polishing head 130 receives the substrate 114 when the substrate 114 is disposed in the ECMP station 102 or the polishing station 106. The arrangement of the ECMP station 1〇2 and the polishing station 106 on the device 1 enables the substrate 114 to be moved between the station and the station while being held in the same polishing head 130 while being held between the station and the station. It is electroplated or ground. One type of polishing head that can be used in the present invention is a TITAN HEADTM substrate carrier manufactured by Applied Materials, Inc., Santa Clara, California. An example of a polishing head 130 that can be used in the grinding apparatus 100 described herein is described in U.S. Patent No. 6,024,630, issued toS. 1285576 This article.
為了要方便控制該研磨設備1 00及在其上所實施的處 理,一包含了中央處理單元(CPU)142,記憶體144,及支 援電路146的控制器140被連接至研磨設備 1〇〇。該 CPU 142可以是能夠被使用於工業設施中用來控制不同的 裝置及壓力的任何一種形式的電腦處理器。記憶體144被 連接至該CPU142。記憶體144或電腦可讀取媒體,可以 是一或多種市場上可獲得的記憶體如動態存取記憶體 (RAM),惟讀記憶體(ROM),軟碟,硬碟,或其它行式的 數位貯存,本地的或遠端的《支援電路146被連接至 CPU 142用來以傳統的方式支援該處理器。這些電路包括 快取,電源供應,時脈電路,輸入/輸出電路,子系統,及 類此者。In order to facilitate the control of the polishing apparatus 100 and the processing performed thereon, a controller 140 including a central processing unit (CPU) 142, a memory 144, and a support circuit 146 is coupled to the polishing apparatus. The CPU 142 can be any form of computer processor that can be used in an industrial facility to control different devices and pressures. The memory 144 is connected to the CPU 142. The memory 144 or the computer readable medium may be one or more commercially available memories such as dynamic access memory (RAM), read memory (ROM), floppy disk, hard disk, or other line. The digital storage, local or remote "support circuit 146 is coupled to the CPU 142 for use in supporting the processor in a conventional manner. These circuits include caches, power supplies, clock circuits, input/output circuits, subsystems, and the like.
用於操作該研磨設備1 0 0及/或控制器1 4 0之電源係 由一電源供應器150所提供。闡示性來說,所示之該電源 供應器150係連接至該研磨設備100之多個元件,包括該 輸送站110、該工廠介面120、該裝載機械臂116以及該控 制器1 40。於該等實施例中,不同電源係供應至該研磨設 備100之兩個或多個元件。 第2圖顯示被支撐於一 ECMP站102上方的研磨頭130 的剖面圖。該ECMP站1〇2大體上包括一承盤202,一電 極204,研磨物205,一圓盤206及一蓋子208。在一實施 例中,該承盤202被耦合至該研磨設備1〇〇的基座1〇8上。 承盤202大體上界定一容器或電解槽,一導電流體如一電 12 1285576 解液220被裝承於其内。被用來處理該基材114的電解液 2 20可包括金屬,如銅,鋁,鎢,金,銀或可被沉積在基 材114上或電化學地從基材114上去除掉的其它物質。The power source for operating the grinding apparatus 100 and/or the controller 1 40 is provided by a power supply 150. Illustratively, the power supply 150 is shown coupled to a plurality of components of the polishing apparatus 100, including the delivery station 110, the factory interface 120, the loading robot 116, and the controller 140. In these embodiments, different power sources are supplied to two or more components of the abrasive device 100. Figure 2 shows a cross-sectional view of the polishing head 130 supported above an ECMP station 102. The ECMP station 1 2 generally includes a retainer 202, an electrode 204, an abrasive 205, a disc 206 and a cover 208. In one embodiment, the retainer 202 is coupled to the base 1 8 of the grinding apparatus 1 . The retainer 202 generally defines a container or cell in which a conductive fluid such as an electric 12 1285576 solution 220 is contained. The electrolyte 2 20 used to treat the substrate 114 may comprise a metal such as copper, aluminum, tungsten, gold, silver or other material that may be deposited on the substrate 114 or electrochemically removed from the substrate 114. .
承盤202可以是由一塑膠如含氟聚合物,TELFON, PFA,PE,PES,或可以與電鍍或電研磨化學物相容的其它 物質所製成_的碗形件。該承盤202具有一底部210其包括 一孔216及一排水道214。孔216被設置在該底部210的 中心以允許一轴2 1 2由其間通過。一密封件2 1 8被設置在 該孔216與該轴212之間並允許軸212轉動,同時可防止 在承盤202内的流體從孔21 6流出。 承盤202典型地包括該電極204,該圓盤206,及該設 置於其内的研磨物205。研磨物205,如一研磨墊,被設置 及支撐在該承盤2 02内的圓盤206上。The retainer 202 can be a bowl made of a plastic such as a fluoropolymer, TELFON, PFA, PE, PES, or other material that is compatible with electroplating or electrogrinding chemicals. The retainer 202 has a bottom portion 210 that includes a bore 216 and a drain 214. A hole 216 is provided in the center of the bottom portion 210 to allow a shaft 2 1 2 to pass therethrough. A seal 2 18 is disposed between the bore 216 and the shaft 212 and allows the shaft 212 to rotate while preventing fluid within the retainer 202 from flowing out of the bore 216. The retainer 202 typically includes the electrode 204, the disc 206, and the abrasive 205 disposed therein. An abrasive 205, such as a polishing pad, is disposed and supported on the disk 206 within the retainer 102.
電極204為一為基材114及/或與一基材表面接觸的研 磨物205的相對電極。該研磨物205是至少部分導電的且 在電化學處理期間,如一包括了電化學沉積及化學機械研 磨’或電化學分解之電化學機械電鍍處理(ECMPP),可與 基材一起作為一電極。電極2 04可以是一陽極或陰極,端 視施加於電極204與研磨物205之間的是正偏壓(陽極)或 負偏壓(陰極)而定。 例如,在將物質從一電解液中沉積至該基材表面上的 處理中,電極204是作為一陽極及基材表面及/或研磨物 205則是作為一陰極。當要將物質從一基材表面上去除 掉,如藉由施加偏壓而分解,電極204是作為一陰極而基 13 1285576 材表面及/或研磨物205則是作為該分解處理中的陽極。.Electrode 204 is an opposite electrode of substrate 145 and/or abrasive 205 that is in contact with a substrate surface. The abrasive 205 is at least partially electrically conductive and can be used as an electrode together with the substrate during electrochemical processing, such as electrochemical mechanical plating (ECMPP) including electrochemical deposition and chemical mechanical polishing or electrochemical decomposition. Electrode 206 can be an anode or a cathode, depending on whether a positive bias (anode) or a negative bias (cathode) is applied between electrode 204 and abrasive 205. For example, in the process of depositing a substance from an electrolyte onto the surface of the substrate, the electrode 204 acts as an anode and substrate surface and/or the abrasive 205 acts as a cathode. When the substance is to be removed from the surface of a substrate, such as by application of a bias, the electrode 204 acts as a cathode and the surface of the substrate 13/285 or the abrasive 205 acts as the anode in the decomposition process. .
電極204被設置在該圓盤206與該承·盤2〇2的底部21〇 之間且浸泡在電解液220中。電極2〇4可以是一板狀件, 一其上形成有多個孔的板子,或多個被設置在一可滲透膜 或容器内的電極件。一可滲透膜(未示出)可被設置在該圓 盤20$與電極204之間或電極204與研磨物205之間用以 將氣泡,如氫氣泡,從水面濾除掉並減少缺陷形成且更加 均勻地施加電流或電力於它們之間。 電極2 04是由將被沉積或去除的物質所製成,如銅, 銘,金,銀,鎢及其它可被電化學地沉積於基材114上的 物質。對於電化學去除處理而言,如陽極分解,電極2 〇4 包括一除了將被沉積的物質之外的一不可消耗的電極,如 用於銅分解之不鏽鋼、鉑、碳或鋁。The electrode 204 is disposed between the disk 206 and the bottom portion 21 of the carrier disk 2 and is immersed in the electrolyte 220. The electrode 2〇4 may be a plate member, a plate having a plurality of holes formed therein, or a plurality of electrode members disposed in a permeable membrane or container. A permeable membrane (not shown) may be disposed between the disc 20$ and the electrode 204 or between the electrode 204 and the abrasive 205 to filter out bubbles, such as hydrogen bubbles, from the surface and reduce defect formation. And a more even current or power is applied between them. Electrode 204 is made of a material to be deposited or removed, such as copper, inscriptions, gold, silver, tungsten, and other materials that can be electrochemically deposited on substrate 114. For electrochemical removal processes, such as anodic decomposition, electrode 2 〇4 includes an inexhaustible electrode in addition to the material to be deposited, such as stainless steel, platinum, carbon or aluminum for copper decomposition.
第18圖係描述一電極2 04之一實施例的平面圖,該 電極具有數個可獨立電偏壓之區域。該等區域有助於控制 電流通過該處理槽之橫向寬度,以控制通過該基材直徑之 移除材料(或沉積)。於第1 8圖所示之實施例中,該電極 204包括三個共中心區域1902、1904、1906,其係藉由一 電源1910而獨立偏壓。該等區域1902、1904、1906可藉 一介電間距物而分隔。雖然第18圖所不之該等區域1902、 1904、1906係配置呈共中心環狀,但該等區域也可替換配 置’例如一徑向配置、扇形配置、弧狀配置、格狀配置、 條狀配置、島狀配置以及楔形配置之一者。 研磨物205可以是一可與流體環境及處理規格相容的 14 1285576 物質墊、網或帶子。在第2圖所示的實施例, 為圓形的且被置於該承盤202的上端,其下 206所支撐。該研磨物205包括一導電材質 導電表面,如一或多個導電元件,用來在處 表面接觸。研磨物205可以是一導電研磨物 一傳統的研磨物質上的導電研磨物質的合成 導電材質可被沉積在一位在該圓盤206與該 間的”支撐”物質用以在處理期間配合研磨物 及/或硬度計。 承盤202,蓋子208,及圓盤206係可活 座108上。承盤202,蓋子208及圓盤206 向基座108移動用以在轉塔112標示基材介 研磨站102,106之間時提供研磨頭13〇的 被設置在承盤202中且被耦合至軸212。軸 耦合至一設在該基座108底下的馬達224。 預定的速度轉動該圓盤206以回應來自於控 訊號。 圓盤2 06可以是一穿孔的支撐物其是由 220相容且不對研磨造成不良影響的物質所: 可用一聚合物如含氟聚合物,PE,TELFON HDPE,UHMW或類此者,製成。圓盤206可 如螺絲,或其它機構與外殼壓嵌,而被固定名 圓盤206最好是與該電極204間隔開用以提 理窗口,因此降低沉積物質及去除物質對於 7,研磨物2〇·5 表面被該圓盤 的至少一部分 理期間與基材 質或被沉積在 物。例如,該 研磨物205之 205的相容性 動地設置在基 可被軸向地朝 於該ECMP與 餘裕圓盤206 2 1 2大致上被 馬達2 2 4以— 制器140的一 一可與電解液 製成。圓盤206 ,PFA,PES, 利用固定件, .承盤202中。 供一較寬的處 電極204的尺Figure 18 is a plan view showing an embodiment of an electrode 204 having a plurality of independently electrically biasable regions. These regions help control the lateral width of the current through the processing bath to control the removal of material (or deposition) through the diameter of the substrate. In the embodiment illustrated in Figure 18, the electrode 204 includes three concentric regions 1902, 1904, 1906 that are independently biased by a power source 1910. The regions 1902, 1904, 1906 can be separated by a dielectric spacer. Although the regions 1902, 1904, and 1906 are not arranged in a common center ring shape in FIG. 18, the regions may be replaced by a configuration such as a radial configuration, a sector configuration, an arc configuration, a lattice configuration, and a strip. One of a configuration, an island configuration, and a wedge configuration. The abrasive 205 can be a 14 1285576 mat, mesh or tape that is compatible with the fluid environment and processing specifications. The embodiment shown in Fig. 2 is circular and is placed at the upper end of the retainer 202, supported by the lower portion 206. The abrasive 205 includes a conductive material conductive surface, such as one or more conductive elements, for contacting the surface. The abrasive 205 can be a conductive abrasive - a synthetic abrasive material on a conventional abrasive material. The conductive material can be deposited on a "support" material between the disk 206 and the abrasive material for processing during processing. And / or hardness tester. The retainer 202, cover 208, and disc 206 are attached to the base 108. The retainer 202, the cover 208 and the disk 206 are moved toward the base 108 for providing the polishing head 13 被 disposed in the retainer 202 and coupled to the turret 112 when the substrate is positioned between the polishing stations 102, 106. Axis 212. The shaft is coupled to a motor 224 disposed beneath the base 108. The disc 206 is rotated at a predetermined speed in response to a control signal. Disc 2 06 can be a perforated support which is a material that is compatible with 220 and does not adversely affect grinding: can be made from a polymer such as fluoropolymer, PE, TELFON HDPE, UHMW or the like. . The disc 206 can be press-fitted with a housing such as a screw, or other mechanism, and the fixed name disc 206 is preferably spaced apart from the electrode 204 for use in the window, thereby reducing deposition and removal of material for the object 7, the abrasive 2 The surface of the 〇·5 is deposited with the base material or at least during a portion of the disc. For example, the compatibility of the 205 of the abrasive 205 is movably disposed such that the base can be axially directed toward the ECMP and the margin disk 206 2 1 2 is substantially controlled by the motor 2 2 4 Made with electrolyte. Disc 206, PFA, PES, using a retaining member, in the retainer 202. For a wider area of the electrode 204
15 1285576 寸的敏感性。 圓盤206對於電解液220大致上是可滲透的。在一實 施例中,圓盤2〇6包括多個穿孔或通道222形成於其上。 穿孔。括孔隙、孔洞、開口或者部份或完全穿通該物件(例 如研磨物)之、备 通道。穿孔的大小及密度被加以選擇用以經由 圓盤206提供払a '' 、均句的分布於該基材114上。 在圓盤9 Λ < 06的一態樣中,其包括具有直徑介於約〇 〇2 英吋(0.5公釐、 · 展)至約0.4英吋(10公釐)的穿孔。穿孔的密产 介於約研磨物的 又 w的3〇〇/。至約80%之間。50〇/。的穿孔密度可提 供的電解液流斜妖 對於研磨處理的不良影響是最小的。通常, 圓盤206的穿沿15 1285576 inch sensitivity. Disk 206 is substantially permeable to electrolyte 220. In one embodiment, the disc 2〇6 includes a plurality of perforations or channels 222 formed thereon. perforation. An aperture, a hole, an opening, or a passageway that partially or completely penetrates the object (e.g., abrasive). The size and density of the perforations are selected to provide a distribution of 払a'', uniformity, across the substrate 114 via the disk 206. In one aspect of the disc 9 Λ < 06, it includes perforations having a diameter of between about 〇 2 吋 (0.5 mm, 展) to about 0.4 吋 (10 mm). The perforation of the perforation is about 3 〇〇 / of about w of the abrasive. To about 80%. 50〇/. The perforation density provides the electrolyte flow to the devil. The adverse effect on the grinding process is minimal. Usually, the wear of the disc 206
牙孔與研磨物2〇5是對齊的用以提供足夠的電 解液質量流穿wA 牙過圓盤206及研磨物205到達基材表面。研 磨物205可用4&k »1 π機械夾或導電黏劑而被置於該圓盤206上。 的研磨物被描述使用在一電化學機械研磨 (ECMP)處理中,vThe perforations are aligned with the abrasive 2〇5 to provide sufficient electrolyte mass flow through the wA through disc 206 and the abrasive 205 to the surface of the substrate. The abrasive 205 can be placed on the disc 206 using a 4&k»1 π mechanical clip or a conductive adhesive. The abrasive is described for use in an electrochemical mechanical polishing (ECMP) process, v
^ 但本發明亦可在使用導電研磨物的其它涉 及了電化學及豳„ A &屨的製程中實施。此等使用電化學作用的製 程的例子包括下 從了電化學沉積其涉及了研磨物2 05被用來在 & $統的偏壓施加設備下施加一均勻的偏塵至一基 材表面上用以沉積一導電材質,及電化學機械電鍍處理 (ECMPP)其包括電化學沉積及化學機械研磨的組合。 在操作時,研磨物205被設置在該承盤202内的電解 液中的圓盤206上。在該研磨頭上的一基材114被置於該 電解液中且與研磨物205相接觸。電解液流經圓盤206及 研磨物205上的穿孔且藉由溝槽而被分布於基材表面上。 16 !285576 來自於一電源的電力然後被施加於該導電研磨物205及電 極204上,且在電解液中的導電材質,如銅,則藉由前述 之一陽極分解的方法被移走°^ However, the present invention can also be practiced in other processes involving the use of conductive abrasives in electrochemical and A & A & 。. Examples of such processes using electrochemical processes include electrochemical deposition which involves grinding The material 2 05 is used to apply a uniform dusting to a substrate surface for deposition of a conductive material under the bias application device of & $, and electrochemical mechanical plating treatment (ECMPP) including electrochemical deposition And a combination of chemical mechanical polishing. In operation, the abrasive 205 is disposed on the disc 206 in the electrolyte in the retainer 202. A substrate 114 on the polishing head is placed in the electrolyte and The abrasive 205 is in contact. The electrolyte flows through the perforations in the disc 206 and the abrasive 205 and is distributed on the surface of the substrate by the grooves. 16 !285576 The electric power from a power source is then applied to the conductive polishing. The conductive material on the object 205 and the electrode 204 and in the electrolyte, such as copper, is removed by one of the aforementioned methods of anodic decomposition.
該電解液220係由一容器233經由一喷嘴270流向一 容積232。該電解液220係藉由多個設置在裙部254上的 孔134而被防止溢流於該處理區232上。孔234大致上提 供一穿過蓋子208的路徑以供電解液220離開處理區232 並流入承盤202的下部。孔234大致上位在凹陷258的一 下表面與中央部分252之間。因為至少一部分的孔234典 型地高於在處理位置之基材114的表面,所以電解液220 會填充該處理區232因而讓研磨物205與基材相接觸。因 此,基材114經由蓋子208與圓盤206之間的一完整的相 對間距範圍而與電解液220相接觸。The electrolyte 220 flows from a vessel 233 through a nozzle 270 to a volume 232. The electrolyte 220 is prevented from overflowing onto the processing zone 232 by a plurality of apertures 134 disposed in the skirt 254. The aperture 234 generally provides a path through the cover 208 for the electrolyte 220 to exit the processing zone 232 and flow into the lower portion of the retainer 202. The aperture 234 is generally positioned between a lower surface of the recess 258 and the central portion 252. Because at least a portion of the apertures 234 are typically higher than the surface of the substrate 114 at the processing location, the electrolyte 220 fills the processing zone 232 thereby contacting the abrasive 205 with the substrate. Thus, substrate 114 is in contact with electrolyte 220 via a complete relative spacing between cover 208 and disk 206.
被收集在承盤202内的電解液220大體上流經位在該 底部210上的排水口 214進入到流體輸送系統272。該流 體輸送系統272典型地包括一容器233及一幫浦242。流 入該流體輸送系統272中的該電解液22〇被收集在該容器 233中。幫浦242將電解液22〇從容器233傳送通過一供 應管244到達喷嘴270,電解液22〇在該處被回收通過該 ECMP站102。一過濾器240被設置在該容器233與該喷 嘴2 70之間用以去除掉可能存在於該電解液22〇中之顆粒 與積聚的物質。 電解溶液可包括市面上可購得的電解液。例如,在去 除含銅的物質上’該電解液可包括硫酸基的電解液或磷酸 17 1285576 基的電解液,如磷酸鍊(K3P04),或或它們的組合。該電 解液亦可包含硫酸基的電解液的衍生物,如硫酸銅,及碟 酸基電解液的衍生物,如磷酸銅。具有高氯酸-醋酸容液及 其衍生物的電解液亦可被使用。The electrolyte 220 collected within the retainer 202 generally flows through the drain 214 located on the bottom 210 into the fluid delivery system 272. The fluid delivery system 272 typically includes a container 233 and a pump 242. The electrolyte 22 flowing into the fluid delivery system 272 is collected in the container 233. The pump 242 transfers the electrolyte 22 from the vessel 233 through a supply line 244 to the nozzle 270 where it is recovered through the ECMP station 102. A filter 240 is disposed between the container 233 and the nozzle 2 70 for removing particles and accumulated substances which may be present in the electrolyte 22. The electrolytic solution may include a commercially available electrolyte. For example, on the removal of the copper-containing material, the electrolyte may include a sulfate-based electrolyte or a phosphoric acid 17 1285576-based electrolyte such as a phosphate chain (K3P04), or a combination thereof. The electrolyte may also contain a derivative of a sulfate-based electrolyte such as copper sulfate and a derivative of a dish-based electrolyte such as copper phosphate. An electrolyte having a perchloric acid-acetic acid solution and a derivative thereof can also be used.
此外,本發明可使用傳統上使用在電鍍或電研磨添加 物中的電解液成分(如增亮劑)來實施。電解液的一個來源 為總部設在美國賓州費城的Rohm and Hass公司的一個子 公司Shipley Leonel所生產商品名為Ultrafill 2000的電解 液。合適電解液組成的例示係描述於2002年1月3日所申 請之美國專利申請序號第10/038,066號,其全文係合併於 此以供參考。Furthermore, the present invention can be carried out using an electrolyte component (e.g., a brightener) conventionally used in electroplating or electrogrinding additives. One source of electrolyte is an electrolyte produced by Shipley Leonel, a subsidiary of Rohm and Hass, Inc., based in Philadelphia, PA, under the trade name Ultrafill 2000. An example of a suitable electrolyte composition is described in U.S. Patent Application Serial No. 10/038,066, filed on Jan. 3, 2002, which is incorporated herein by reference.
動態流率,或以一近約20加崙每分(GPM)之流率,例如借 約0.5GPM及約20GPM(例如約2GPM),提供至該基材表面 及一電極之間。吾人相信上述電解液流率已足以由基材表 面排空研磨物質以及化學副產物,並重新補充電解質以改 善研磨率。 當於研磨製程中使用機械磨钱(mechanical abrasion) 時’該基材114及研磨物205係彼此相對旋轉以將物質由 基材表面移除。機械磨蝕可藉由物理接觸導電研磨物及傳 統研磨材料的方式進行。基材114及研磨物205係分別以 、約5rpm或更高的轉速旋轉,例如介約l〇rpm及約50rpm 之間。 於一實施例中,可使用高轉速研磨製程。該高轉速製 18 1285576 程包括以一約1 5 0 rPm或更高之平台轉速(例如介約1 5 0 rPm 及約750 ipm)旋轉該研磨物205;且該基材114可以一介約 150rpm及約500rpm之轉速(例如介約300rpm及約500rpm) 作旋轉。進一步有關使用研磨物、製程以及此處所述設備 之高轉速研磨製程的描述係揭示於美國專利申請序號第 60/308,330 號,標題為厂 Method and Apparatus for Chemical Mechanical Polishing of Semiconductor Substrate」其係於 2 001年7月25曰所申請。其他移動,包括軌道移動或通 過該基材表面之彎曲移動等,也可於製程期間進行。 當接觸基材表面時,研磨物205及該基材表面間可施 加約6psi或更小的壓力,例如約2psi或更小。對於含有 低介電常數的物質之基材而言,於該基材的研磨期間被使 用在該基材114與該研磨物205之間的壓力可約為2psi或 更小。於一態樣中,一介約O.lpsi及約〇.2pSi之間的導電 研磨物壓力可用以研磨基材,如前文所述。 在陽極分解中,電位差或偏壓係施加於該電極 204(作為陰極)以及該研磨物205之研磨表面31〇間(作為 %極)(參照第3圖)。與該研磨物接觸之基材係藉由該導電 研磨表面310進行研磨,同時該偏壓係施加於該導電物支 撑元件。該施加偏壓可移除導電物質,例如行程於基材表 面上的含銅材料《建立偏壓的方式可包括實施約伏特或 更低的電壓至基材表面。介約0.1伏特及約1〇伏特間的電 壓可用以將含銅材料由基材表面分解至電解液中。該偏壓 也可產生一介約0.1 mA/cm2至約50 mA/cm2的電流密 19 1285576 度,或對於200公釐的基材而言,介於約〇」安培至約2〇 安培的電流。 該電源供應器150用以建立電位差並進行陽極分解 製程的訊號可取決於由基材表面移除材料的要求而變動。 例如’一隨著時間改變、的陽極電位可被提供至該導電研磨 物2〇5。該訊號亦可藉由電子脈衝調變技術來施加。該電 子脈衝調變技術包含施加一固定電流密度或電壓於該基材 上持續一第一段時間,然後施加一固定的反向電壓於該基 材上持續一第二段時間,重復第一及第二步驟。例如,該 電子脈衝調變技術可使用一從約伏至約_15伏到約〇 J 伏至15伏之間的《 —可變電位。 有關校正該研磨媒介上之穿透圖案及密度,一般咸信 當與傳統的邊緣接觸銷之較高的邊緣去除率及較低的中央 去除率相比較時,讓基材相對於研磨物205形成偏壓可造 成導電材質,如金屬,從基材表面均勻地分解至電解液中。 導電材質,如含銅物質,可以約15〇〇〇埃/分鐘或稍 低,如介於約100埃/分鐘至約15〇〇()埃/分鐘,的速率從 至J 一部分的基材表面上被去除掉。在本發明的一實施倒 中’其中將被去除的銅物質小於12000埃厚,電壓可被旅 加至該導電研磨物205用以提供一介於100埃/分鐘至約 8000埃/分鐘的去除率。 接下來的電研磨製程,該基材可進一步研磨或擦淨以 移除阻障層物質,由介電材料移除表面缺陷,或利用導電 研磨物改善研磨製程的平坦性。適當之擦淨製程及組成物 20 1285576 係揭示於2000年5 .月1 1日所共同申請之美國專利 號第09/569,968號中,其全文係合併於此以供參考 研磨物材料 此處所述之研磨物材料可由導電材料形成,導 至少包括一導電研磨材料或者包括一以介電或導電 料形成之導電元件。於一實施例中,導電研磨材料 數個導電纖維、導電填料或其結合物。該等導電纖 電填料或其結合物可分佈於研磨材料中。 該等導電纖維可至少包括導電或介電材料(例 或導電聚合物或碳基材料)、至少部分塗覆或覆蓋導 者(包括金屬、碳基材料、導電陶瓷材料、導電合金 合者”該等導電纖維可為纖維或細線、導電纖維或 物、一或多個迴圈、線圈或導電纖維環等形式。多 材料(例如多層導電織物或纖維)可用於形成導電 料0 該導電纖維包括以導電材料塗覆之介電或 材料。介電聚合材料可作為纖維材料。合適之介 料的範例包括聚合物材料(諸如聚醯胺、聚亞氨、 物、聚A醋、聚醋、聚丙烯、聚乙烯、聚苯乙烯 酉旨、含二烯之聚合物(例如丙/乙烯/苯乙 (AES)、丙烯酸聚合物或者其結合物)等。本發明 作為前述纖維之有機或無機材料的使用。 該導電纖維材料可包括本質上為導電的聚1 申請序 電材料 研磨材 可包括 維、導 如介電 電材料 或其結 導電織 層導電 研磨材 電纖維 纖維材 龍聚合 聚碳酸 共聚物 包括可 ,質,如 21 1285576 聚乙炔、固體·聚合物導體(PEDT)其在市場上的商品名稱為 BaytornTM、聚苯胺、聚 咯、 聚 吩、碳 基 纖 物。導電聚合物的另一個例子為聚合物-貴金屬混合物質。 聚合物-貴金屬混合物質一般對於周圍的電解液是化 學上鈍態的,如具有可抗氧化的貴金屬《聚合物-貴金屬複 合物質的一個例子為翻-聚合物混合物質。導電研磨材料之 例示(包括導電纖維)已詳細揭示於目前申請中之美國專利 申請序號第10/033,732,其係於2001年12月27曰所申 請’標題為「Conductive Polishing Article For Electrochemical Mechanical Polishing」,其全文係合併於 此以供參考。本發明也包括該等可作為纖維材料之有機或 無機材料的使用。 該纖維材料可為固體或自然中空者。該纖維長度範圍 介約Ιμιη至約1000mm,且直徑介約〇 1μηι至約imm。於 一態樣中,對導電聚合複合物及泡沫材料而言(如沉積於聚 氨酯中的導電纖維),纖維直徑可介約5μπι至約200μιη , 且長度之寬比對直徑約為5或更高,例如約1 〇或更高。該 纖維之截面區可為圓形、橢圓、星形圖案、雪片狀或其他 任何形狀之加工介電質或導電纖維。具有長度介約5mm及 約1000mm間且直徑介約5μιη至約1000μπι間之高深寬比 纖維可用於形成導電纖維之網片、迴圈、纖維或織物。該 等纖維也可具有範圍介約104psi及約1〇8psi之間的彈性係 數。然而,本發明應涵蓋任何彈性係數足以提供研磨物及 前述製程中平順、彈性纖維者。 22 1285576 沉積於該導電或介電纖維材料上之習知材料一般包 括導電無機化合物,諸如金屬、金屬合金、碳基材料、導 電陶瓷材料、金屬無機化合物或其結合物。可用於此處導 電材料塗層之金屬範例包括責金屬、錫、船、銅、錄、銘 以及其組合物。貴金屬包括金、鉑、鈀、銥、銶、鍺、釕、 餓以及其組合物,其中又以金及鉑為佳。本發明除了前述 該等外,也涵蓋其他用於導電材料塗層之金屬的使用。碳 基材料包括炭黑、石墨以及可固定於纖維表面之碳粒子。 陶竟材料之範例包括碳化妮(NbC)、碳化結(ZrC)、碳化鈕 (TaC)、碳化鈦(TiC)、碳化鎢(WC)以及其組合物β本發明 除前述該等外,也涵蓋可用於導電材料塗層之其他金屬、 其他碳基材料以及其他陶瓷材料。金屬無機化合物包括如 沉積於聚合物纖維(如壓克力或尼龍纖維)上之硫化銅或稱 danjenite、Cu9S5。該 danjenite 塗覆纖維係 Thunder〇n⑧(商 標名)’其係由曰本Nihon Sanmo Dyeing有限公司所上市。 該Thunderon⑧纖維一般具有一介約〇 〇3μιη及約〇 “瓜之 danjenitWCud5)的塗層,且已發現具有約4(m/cm之導電 性。該導電塗層可藉由電鍍、塗覆、物理氣相沉積、化學 沉積、黏、结或結Μ電材料等方式直接沉積於該纖維上。 此外,亦可以成核、戎曰接七斗、 播 Α日日種方式沉積導電材料層,例如銅、 錄或錄等可用以改善該導雷分粗芬Α1& ΛΔ. I I ,. «邊导電材枓及纖維材料間的黏結性。 該導電材料可沉積在久伽人.傲斗、T 1 各個;I電質或不同長度的導電纖維 上,以及沉積在由介電質或導電纖維材料製成具某種形狀 的迴圈、泡沫材料以及織物或纖維上。 23 1285576 塗覆之聚乙烯纖維。其 的丙烯酸纖維(壓克力 合適之導電纖雉範例係一以金 餘合適之導電纖維範例包括鍍有金 棉)以及塗覆铑的尼龍纖維。利用一、卜、& : 取孩材枓之導電纖維的範 金層沉積於該銅層 例係以鋼晶種層塗覆尼龍纖維,並將一 上0 該導電填料可包括碳基材料或導電粒子及纖維。導電 破基材料之範例包括碳泡床、碳纖維、碳奈米卜碳奈米 發泡體(⑽。n nonofoam),碳氣膠(earbQn咖⑽、石墨 以及其組合物。導電粒子或纖維之範例包括本質為導電性 之聚合物、介電質或以導電材料塗覆之導電粒子、塗有介 電填料材料之導電材料、導電無機粒子包括金屬粒子(如 金、鉑、錫、鉛以及其他金屬或金屬合金粒子)、導電陶兗 粒子以及其組合物。該導電填料可部份或完全以金屬(如貴 金屬)、碳基材料、導電陶瓷材料、金屬無機化合物或其結 。物(如剛文所述)塗覆之。填充材料之範例係一碳纖維或 塗有銅或鎳之石墨。導電填料可為圓形、橢圓、具有特定 深寬比(例如2或更高)之直條,或其他任一形狀之加工填 料°填充材料此處廣義界定為可以沉積於第二材料以改變 第一材料之物理、化學或電子特性之材料。就其本身而論, 填充材料也可包括介電質或部份或完全以一導電金屬塗覆 之導電纖維材料,或此處所述之導電聚合物。部份或完全 塗覆於導電金屬或導電聚合物中之介電質填料或導電纖維 材料也可為完整纖維或纖維片。 該導電材料係用於塗覆介電質及導電纖維,而填料可 24 1285576 提供形成該導電研磨材料之所欲導電高度。一般而言,咳 導電材料之塗覆係沉積在該纖維及/或填充材料上達一介 於約Ο.ΟΙμιη及約50μιη間之厚度,例如介約0·02μιη以及 約1 Ομιη之間❶該塗覆一般會形成纖維或具有電阻率低於 約ΙΟΟΩ-cm(例如介約Ο.ΟΟΙΩ-cm及約32Q-cm)之填料。本 發明所涵蓋之電阻率係取決於纖維或填料以及使用之塗 層,並包括蓋導電材料塗層之電阻率,例如鉑,其時 的電阻率為9.81 μΩοπι。合適之導電纖維的範例包括以約 〇· 1 μιη銅、鎳或鈷塗覆的尼龍纖維,以及以約2μιη的金沉 積在銅、鎳或姑層上的尼龍纖維,其纖維總直徑介約3 〇 μιη 及約90μιη。 該導電研磨材料可包括該導電或介電纖維的組合(其 中該介電纖維至少部份以額外的導電材料及導電纖維塗覆 或覆蓋)以達所欲之導電性或其他研磨物特性。一組合物的 範例係使用塗覆有金的尼龍纖維及石墨作為導電材料,其 至少包括一部份的導電研磨物材料。 該導電纖維材料、導電填料材料或其組合皆可散佈於 黏結材料中’或形成一複合導電研磨材料。傳統研磨材料 即為黏結材料的一種形式。傳統研磨材料一般係介電材 料’諸如介電聚合物材料。介電聚合物研磨材料的範例包 括聚氣Sa以及與填料混合的聚氣酯、聚碳酸酯、聚苯硫醚 (PPS)、Teflon聚合物、聚笨乙烯、三元乙丙橡膠(EPDM) 或其組合物’以及其他用於研磨材料表面之研磨材料。習 知研磨材料可包括浸潰於氨基曱酸酯中或呈泡泳態之熟式 25 1285576 纖維。本發明涵蓋習知任何可連同此處所述之導電纖維及 填料作為黏結材料(已熟知為高分子基材)之研磨材料。The dynamic flow rate, or a flow rate of approximately 20 gallons per minute (GPM), such as by about 0.5 GPM and about 20 GPM (e.g., about 2 GPM), is provided between the surface of the substrate and an electrode. We believe that the above electrolyte flow rate is sufficient to evacuate the abrasive material and chemical by-products from the surface of the substrate and replenish the electrolyte to improve the polishing rate. When mechanical abrasion is used in the polishing process, the substrate 114 and the abrasive 205 are rotated relative to each other to remove the substance from the surface of the substrate. Mechanical abrasion can be carried out by physically contacting the electrically conductive abrasive and the conventional abrasive material. The substrate 114 and the abrasive 205 are each rotated at a speed of about 5 rpm or higher, for example, between about 1 rpm and about 50 rpm. In one embodiment, a high speed grinding process can be used. The high speed system 18 1285576 includes rotating the abrasive 205 at a platform speed of about 150 rPm or higher (eg, about 150 rPm and about 750 ipm); and the substrate 114 can be at about 150 rpm. Rotation was carried out at a speed of about 500 rpm (e.g., at about 300 rpm and about 500 rpm). Further descriptions of the use of abrasives, processes, and high-speed grinding processes for the apparatus described herein are disclosed in U.S. Patent Application Serial No. 60/308,330, entitled "Method and Apparatus for Chemical Mechanical Polishing of Semiconductor Substrate" Applyed on July 25, 001. Other movements, including orbital movement or bending movement through the surface of the substrate, can also be performed during the manufacturing process. When contacting the surface of the substrate, a pressure of about 6 psi or less may be applied between the abrasive 205 and the surface of the substrate, such as about 2 psi or less. For substrates having a low dielectric constant material, the pressure applied between the substrate 114 and the abrasive 205 during the grinding of the substrate can be about 2 psi or less. In one aspect, a conductive abrasive pressure between about 0.1 psi and about 0.2 pSi can be used to grind the substrate as previously described. In the anodic decomposition, a potential difference or a bias voltage is applied to the electrode 204 (as a cathode) and the polishing surface 31 of the abrasive 205 (as a % pole) (see Fig. 3). The substrate in contact with the abrasive is ground by the electrically conductive abrasive surface 310 while the bias is applied to the electrically conductive support member. The biasing can remove the conductive material, such as a copper-containing material that travels over the surface of the substrate. The manner in which the bias is established can include applying a voltage of about volts or less to the surface of the substrate. A voltage between about 0.1 volts and about 1 volt volt can be used to decompose the copper-containing material from the surface of the substrate into the electrolyte. The bias voltage can also produce a current density of about 19 285 576 degrees from about 0.1 mA/cm2 to about 50 mA/cm2, or a current of from about 〇" to about 2 amps for a 200 mm substrate. The signal used by the power supply 150 to establish the potential difference and perform the anodization process may vary depending on the requirements for material removal from the substrate surface. For example, an anode potential which changes with time can be supplied to the conductive abrasive 2〇5. The signal can also be applied by an electronic pulse modulation technique. The electronic pulse modulation technique includes applying a fixed current density or voltage to the substrate for a first period of time, and then applying a fixed reverse voltage to the substrate for a second period of time, repeating the first The second step. For example, the electronic pulse modulation technique can use a "variable potential" from about volts to about -15 volts to about 〇 J volts to 15 volts. In relation to correcting the penetration pattern and density on the abrasive medium, it is generally believed that the substrate is formed relative to the abrasive 205 when compared to the higher edge removal rate and lower central removal rate of conventional edge contact pins. The bias voltage can cause a conductive material, such as a metal, to be uniformly decomposed from the surface of the substrate into the electrolyte. Conductive materials, such as copper-containing materials, can be at a rate of about 15 angstroms per minute or less, such as between about 100 angstroms/minute to about 15 angstroms (Å angstroms per minute) at a rate from the surface of the substrate to part J. It was removed. In an implementation of the invention, wherein the copper species to be removed is less than 12,000 angstroms thick, a voltage can be applied to the conductive abrasive 205 to provide a removal rate of between 100 angstroms/minute and about 8000 angstroms/minute. . In the subsequent electrical polishing process, the substrate can be further ground or wiped to remove the barrier layer material, remove surface defects from the dielectric material, or utilize conductive abrasives to improve the flatness of the polishing process. </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The abrasive material can be formed from a conductive material comprising at least one electrically conductive abrasive material or a conductive element formed of a dielectric or electrically conductive material. In one embodiment, the electrically conductive abrasive material is a plurality of electrically conductive fibers, electrically conductive fillers, or combinations thereof. The electrically conductive fibrous fillers or combinations thereof may be distributed in the abrasive material. The electrically conductive fibers may comprise at least a conductive or dielectric material (for example or a conductive polymer or a carbon-based material), at least partially coated or covered with a conductor (including a metal, a carbon-based material, a conductive ceramic material, a conductive alloy). The electrically conductive fibers may be in the form of fibers or fine threads, electrically conductive fibers or articles, one or more loops, coils or conductive fiber rings, etc. Multi-materials (eg, multilayer conductive fabrics or fibers) may be used to form the conductive material. A dielectric or material coated with a conductive material. A dielectric polymeric material can be used as the fibrous material. Examples of suitable materials include polymeric materials (such as polyamine, polyurethane, poly A vinegar, poly vinegar, polypropylene). , polyethylene, polystyrene, diene-containing polymers (such as propylene / ethylene / styrene (AES), acrylic polymers or combinations thereof), etc. The invention is used as an organic or inorganic material of the aforementioned fibers The conductive fiber material may comprise a conductive material which is electrically conductive in nature. The abrasive material may comprise a dimension, a conductive material such as a dielectric material or a conductive conductive layer thereof. Dimensional fiber-polymeric polycarbonate copolymers include, for example, 21 1285576 polyacetylene, solid polymer conductors (PEDT), which are marketed under the trade names BaytornTM, polyaniline, polylocene, polyphenylene, carbon-based fibers. Another example of a conductive polymer is a polymer-precious metal mixture. The polymer-precious metal mixture is generally chemically passive to the surrounding electrolyte, such as a noble metal with a resistance to oxidation, a polymer-precious metal composite. An example of a turn-polymer blend. An example of a conductive abrasive material (including conductive fibers) is disclosed in detail in the current application, U.S. Patent Application Serial No. 10/033,732, filed on December 27, 2001. The title is "Conductive Polishing Article For Electrochemical Mechanical Polishing", the entire contents of which are incorporated herein by reference. The present invention also includes the use of such organic or inorganic materials as fibrous materials. The fibrous material may be solid or naturally hollow. The fiber has a length ranging from about ιμιη to about 1000 mm, and the diameter is about μ1μηι to about Imm. In one aspect, for conductive polymeric composites and foams (such as conductive fibers deposited in polyurethane), the fiber diameter may range from about 5 μm to about 200 μm, and the length to width ratio is about 5 or Higher, for example about 1 〇 or higher. The cross-sectional area of the fiber may be a circular, elliptical, star-shaped pattern, snow flake or any other shape of processed dielectric or conductive fiber. It has a length of about 5 mm and about High aspect ratio fibers between 1000 mm and having a diameter ranging from about 5 μm to about 1000 μm can be used to form webs, loops, fibers or fabrics of electrically conductive fibers. The fibers can also have a range of between about 104 psi and about 1 〇 8 psi. Elastic coefficient. However, the present invention should cover any elastomeric coefficient sufficient to provide abrasives and smooth, elastic fibers in the foregoing processes. 22 1285576 Conventional materials deposited on the conductive or dielectric fiber material generally comprise a conductive inorganic compound such as a metal, a metal alloy, a carbon based material, a conductive ceramic material, a metal inorganic compound or a combination thereof. Examples of metals that can be used in the coating of conductive materials herein include metals, tins, boats, copper, magnets, and compositions. Precious metals include gold, platinum, palladium, rhodium, ruthenium, osmium, iridium, hunger, and combinations thereof, with gold and platinum being preferred. In addition to the foregoing, the present invention also encompasses the use of other metals for coatings of conductive materials. The carbon-based material includes carbon black, graphite, and carbon particles that can be fixed to the surface of the fiber. Examples of ceramic materials include NbC, ZrC, TaC, TiC, WC, and combinations thereof. The present invention encompasses, in addition to the foregoing, Other metals, other carbon-based materials, and other ceramic materials that can be used for coating conductive materials. The metal inorganic compound includes copper sulfide such as danjenite or Cu9S5 deposited on a polymer fiber such as acrylic or nylon fiber. The danjenite coated fiber system Thunder〇n8 (trade name) was marketed by Ni本Nihon Sanmo Dyeing Co., Ltd. The Thunderon 8 fiber generally has a coating of about 3 μm and about dan danjenit WCud 5 and has been found to have an electrical conductivity of about 4 (m/cm. The conductive coating can be electroplated, coated, and physically gas-treated. Phase deposition, chemical deposition, adhesion, junction or crucible materials are deposited directly on the fiber. In addition, layers of conductive materials such as copper may be deposited by nucleation, splicing, and sowing. Recording or recording, etc. can be used to improve the conductivity of the lead Α & & & II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II II Ion electrical or electrically conductive fibers of different lengths, as well as on loops, foams, and fabrics or fibers of a shape made of dielectric or electrically conductive fiber materials. 23 1285576 Coated polyethylene fibers. Acrylic fiber (acrylic fiber suitable for conductive fiber 雉 系 一 一 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适 合适Conductive fiber Deposited in the copper layer, the nylon fiber is coated with a steel seed layer, and the conductive filler may include carbon-based materials or conductive particles and fibers. Examples of conductive base materials include carbon bubble beds, carbon fibers, carbon. Nanobubone carbon foam ((10). n nonofoam), carbon gas glue (earbQn coffee (10), graphite and combinations thereof. Examples of conductive particles or fibers include polymers that are electrically conductive, dielectric or The conductive material coated conductive particles, the conductive material coated with the dielectric filler material, and the conductive inorganic particles include metal particles (such as gold, platinum, tin, lead, and other metal or metal alloy particles), conductive ceramic particles, and combinations thereof The conductive filler may be partially or completely coated with a metal (such as a precious metal), a carbon-based material, a conductive ceramic material, a metal inorganic compound or a junction thereof (as described in the text). The example of the filler material is a carbon fiber. Or graphite coated with copper or nickel. The conductive filler may be round, elliptical, straight strip with a specific aspect ratio (for example, 2 or higher), or processed filler of any other shape. Broadly defined herein as a material that can be deposited on a second material to alter the physical, chemical, or electronic properties of the first material. As such, the filler material can also include a dielectric or be partially or completely coated with a conductive metal. The conductive fiber material, or the conductive polymer described herein, may be a complete fiber or a fiber sheet. The dielectric filler or the conductive fiber material partially or completely coated in the conductive metal or the conductive polymer may also be a complete fiber or a fiber sheet. The material is used to coat the dielectric and conductive fibers, and the filler can provide the desired conductive height to form the conductive abrasive material. In general, the coating of the cough conductive material is deposited on the fiber and/or filler material. The coating has a thickness between about ΟΙ.ΟΙμιη and about 50 μm, for example between about 0·02 μm and about 1 Ομιη. The coating generally forms fibers or has a resistivity of less than about ΙΟΟΩ-cm (eg, Ο. ΟΟΙ Ω-cm and about 32Q-cm) of filler. The resistivity encompassed by the present invention depends on the fiber or filler and the coating used, and includes the resistivity of the coating of the cover conductive material, such as platinum, which has a resistivity of 9.81 μΩοπι. Examples of suitable conductive fibers include nylon fibers coated with about 1 μm of copper, nickel or cobalt, and nylon fibers deposited on copper, nickel or a layer of about 2 μm gold with a total fiber diameter of about 3 〇μιη and about 90μιη. The electrically conductive abrasive material can comprise a combination of electrically conductive or dielectric fibers (wherein the dielectric fibers are at least partially coated or covered with additional electrically conductive material and electrically conductive fibers) to achieve the desired electrical conductivity or other abrasive characteristics. An example of a composition is the use of gold coated nylon fibers and graphite as the electrically conductive material, which includes at least a portion of the electrically conductive abrasive material. The electrically conductive fibrous material, the electrically conductive filler material, or a combination thereof may be dispersed in the bonding material or form a composite electrically conductive abrasive material. Traditional abrasive materials are a form of bonded material. Conventional abrasive materials are typically dielectric materials such as dielectric polymeric materials. Examples of dielectric polymer abrasive materials include polygas Sa and polyglycols mixed with fillers, polycarbonate, polyphenylene sulfide (PPS), Teflon polymer, polystyrene, EPDM or Its composition' and other abrasive materials used to grind the surface of the material. Conventional abrasive materials can include cooked 25 1285576 fibers impregnated in amino phthalate or in a swell state. The present invention contemplates any abrasive material that can be used in conjunction with the electrically conductive fibers and fillers described herein as a bonding material (known as a polymeric substrate).
可將添加物加入黏結材料中以幫助導電纖維、導電填 料或其組合物在聚合材料中的分佈。添加物可用於改善機 械、熱及由纖維及/或填料及黏結材料所形成之研磨材料的 電特性。添加物包括用於改善聚合物交聯的交聯物冬用於 分佈導電纖維或導電填料以於黏結材料中更為均勻的分散 劑。交聯物的範例包括氨基化合物、矽烷交聯物、聚異氰 酸脂(polyisocyanate)化合物以及其組合物^分散劑的範例 包括N取代之長鏈鏈烯基丁二硫亞氨、高分子重量之有機 酸的胺鹽、含有極性官能基(例如胺類、氨基化合物、亞胺、 硫亞胺、氫氧根、乙醚)之甲基丙烯或丙烯酸衍生物。另外 含硫化合物,例如氫硫基醋酸以及有關的酯類等已發現是 覆金纖維及黏結材料中之填料的有效分散劑。本發明涵蓋 的添加物數量及種類可為纖維或填充材料以及所使用的黏 結材料而作調整,且前述範例係闡示性的,故不應視為或 解讀為本發明的限制。 此外,導電纖維及/或填充材料的網片可藉由提供足 夠量的導電纖維及/或導電填充材料以形成該黏結材料中 的物理連續或電子連續媒介或相的方式形成於該黏結材料 中。該導電纖維及/或導電填料一般在與一聚合黏結材料結 合時’至少包括重量百分比介約2%至約85%,例如介約 5%及約60%的研磨材料。 該以導電材料塗覆,及選擇性以導電填料塗覆之纖維 26 1285576 材料的混紡纖維或織物可置於黏結劑中。該以導電材料塗 覆之纖維材料可為混紡以形成紗線。該等紗線可借助於黏 結劑或塗料以聚合成導電網片。該紗線可設為研磨墊材料 中的導電元件,或可混於織物或纖維中。 或者,該等導電纖維及/或填料可與結合劑相結合, 以形成一組合導電研磨材料。合適之結合劑範例包括環氧 樹酯、矽膠、氨基甲酸酯、聚亞胺、聚醯胺、氟素高分子、 其添加氟素之衍生物、或其組合物等。額外的導電材料, 例如導電聚合物、額外的導電填料或其組合物皆可與結合 劑使用以達所欲之導電性或其他研磨物特性。該導電纖維 及/或填料可包括介約2%至約85%,例如介約5%及約60% 的研磨材料。 該導電纖維及/或填充材料可用於形成導電研磨材料 或研磨物,且該等研磨材料或研磨物具有約5〇n_cin或更 低(例如約3Q-cm或更低)的體積或表面電阻。於該研磨物 之一實施例中,該研磨物或研磨物的研磨表面具有約 ΙΩ-cm或更低的電阻。一般而言,該導電研磨材料或導電 研磨材料的組成份及傳統的研磨材料都可提供具有體積電 阻或約50Ω-cm或更低之體積表面電阻的導電研磨物。該 導電研磨材料之組成份的範例及傳統研磨材料包括將金或 具有1 Ω - c m或更低電阻的碳基纖維,以足夠量沉積在傳統 聚氨酯之研磨材料中’藉以作出具有體積電阻約ΙΟΩ-cm 或更低的研磨物。 由此處所述之該導電纖維及/或填料所製成的傳統研 27 1285576 磨材料一般具有在穩定電場下不會降解且在酸或鹼性電解 液中可避免降解的機械特性。該導電材料及任何結合材料 係經結合以提供相同的機械特性。若可以,用於習知研磨 物中的習知研磨材料亦可行。例如,,電研磨材料、無論 是單獨或與結合材料相結合,皆具有對聚合物材料蕭式D 硬度約1 00或更低的硬度值,此係由總,設於寶州費城的 美國測試及材料學會(ASTM)所測量的。在_態樣中,該導 電材料具有對聚合物材料約80度或更低的蕭氏D硬度 值。該導電研磨部310 一般包括約5〇〇公釐或稍小的表面 粗糙度。該研磨墊特性一般係經設計以於機械研磨期間及 當施一偏壓至基材表面時降低或最小化該基材表面的刮 研磨物結構 在一態樣中,研磨物是由 所述之單層的導電研磨材料所 磨物可包含多種材料層,包括 材料或提供一導電表面來與基 接觸。 一被置放於支撐部上之本文 構成的。在另一態樣中,研 在基材表面上的至少一導電 材及至少一物支撐部或底整 第3圖為該研磨物2〇5之一實施例的部份剖面圖。示 於第3圖中的研磨物205包括一複合研磨物,其具有一導 電研磨部用來研磨-基材表面及—物支樓部或底塾 部分320。 一 該導電研磨部分31〇可包括一導電研磨材料,其包括 28 1285576 此處所述之導電纖維及/或導電填料。 310可包括一分散於聚合材料中且包含 填料的導電材料。該導電纖維可設於3 導電纖維可包括設於聚合物點結劑中; 性導電材料一般具有硬度及係數低於南 的範例除了其他軟於銅的導電金屬、^ 外,尚包括金、錫、鈀-錫合金、鉑·以^ 不會刮傷研磨基材,本發明亦涵蓋其伯 填料。此外,該導電材磨部份可包括一 或導電纖維環、或導電纖維混紡等形3 織物。該導電研磨部分31〇也可由多層 導電織物或纖維)所組成。 導電研磨部分310之一範例包相 金以及置於聚氨酯中的石墨。其他範合, 石夕膠中的石墨粒子以及/或碳纖維。其他 氨_基底中的金或錫粒子。 於另一實施例中,該導電研磨部分 述之研磨粒子3 60。該研磨粒子36〇之 露於該導電研磨部分310之上方研磨表 子3 60 —般係經配置以移除被研磨基材 層’藉以將下方金屬暴露於電解液並發 增強製程期間的研磨率。研磨粒子360 以破壞形成於金屬表面上之鈍態層的陶 聚合物粒子。聚合物粒子可為固體或可 •J如,該導電研磨部 導電纖維及/或導f 合物黏結劑中。該 軟性導電材料。-軟 者。軟性導電材料 金以及陶瓷複合物 斜。若尺寸夠小而 硬度高於銅的導電 乏多個迴圈、線圈、 以形成導電布料或 事電材料(例如多層 塗覆有尼龍纖維的 包括置於聚氨酯或 範例包括分佈於聚 3 1 0可具有此處所 至少若干部分係暴 面3 70 ^該研磨粒 之金屬表面的純態 生電化學反應,以 的範例包括強度足 瓷、無機、有機或 降低研磨部分3 1 0 29 1285576 磨損率的海綿體。 該物支擇部320 一般且有導 較小的直彳\導電研磨。卩分31G相同或 導電研廢邮 發明亦涵蓋寬度或直徑大於 狀導雷研麻却 ^ 雖…、此處圖示係闡示環 導曾 V3 1〇及物支撐部320,但本發明也涵蓋該等 電研磨部31〇、物支撐部 ^ ^ ,U次雨者為不问形狀者,例 或橢圓表面。本發明更涵蓋導雷 物支撐邱I月更屆盍導電研磨部310、Additives can be added to the bonding material to aid in the distribution of the electrically conductive fibers, electrically conductive fillers, or combinations thereof in the polymeric material. Additives can be used to improve the electrical properties of the machine, heat, and abrasive materials formed from fibers and/or fillers and bonding materials. Additives include crosslinkers for improving cross-linking of polymers for use in distributing conductive fibers or conductive fillers to provide a more uniform dispersant in the bonding material. Examples of the cross-linking substance include an amino compound, a decane cross-linking compound, a polyisocyanate compound, and a composition thereof. Examples of the dispersing agent include an N-substituted long-chain alkenyl butyl dithioimide, a polymer weight. An amine salt of an organic acid, a methacrylic acid or an acrylic acid derivative containing a polar functional group (for example, an amine, an amino compound, an imine, a sulfilimine, a hydroxide, or an ether). Further, sulfur-containing compounds such as mercaptoacetic acid and related esters have been found to be effective dispersants for fillers in gold-coated fibers and bonding materials. The amounts and types of additives encompassed by the present invention may be adjusted for the fibers or filler materials and the bonding materials used, and the foregoing examples are illustrative and are not to be considered or construed as limiting. Furthermore, the web of electrically conductive fibers and/or filler material can be formed in the bonding material by providing a sufficient amount of electrically conductive fibers and/or electrically conductive filler material to form a physical continuous or electronic continuous medium or phase in the bonding material. . The electrically conductive fibers and/or electrically conductive fillers generally comprise at least about 2% to about 85% by weight, such as about 5% and about 60% by weight of the abrasive material when combined with a polymeric bonding material. The blended fibers or fabric coated with a conductive material and optionally coated with a conductive filler material may be placed in a binder. The fibrous material coated with a conductive material may be blended to form a yarn. The yarns can be polymerized into a conductive mesh by means of a binder or coating. The yarn can be provided as a conductive element in the pad material or can be mixed into the fabric or fiber. Alternatively, the electrically conductive fibers and/or fillers can be combined with a bonding agent to form a combined electrically conductive abrasive material. Examples of suitable binders include epoxy resins, silicones, urethanes, polyimines, polyamines, fluoropolymers, fluorocarbon-added derivatives thereof, or combinations thereof. Additional conductive materials, such as conductive polymers, additional conductive fillers, or combinations thereof, can be used with the bonding agent to achieve the desired conductivity or other abrasive characteristics. The electrically conductive fibers and/or fillers can comprise from about 2% to about 85%, for example from about 5% to about 60%, of the abrasive material. The electrically conductive fibers and/or filler materials can be used to form electrically conductive abrasive materials or abrasives, and such abrasive materials or abrasives have a volume or surface resistance of about 5 〇 n_cin or less (e.g., about 3 Q-cm or less). In one embodiment of the abrasive, the abrasive surface of the abrasive or abrasive has an electrical resistance of about Ι Ω-cm or less. In general, the conductive abrasive or a component of the electrically conductive abrasive material and the conventional abrasive material can provide a conductive abrasive having a volume resistivity or a volumetric surface resistance of about 50 Ω-cm or less. Examples of the composition of the electrically conductive abrasive material and conventional abrasive materials include carbon or a carbon-based fiber having a resistance of 1 Ω - cm or less, which is deposited in a sufficient amount in a conventional polyurethane abrasive material to thereby have a volume resistance of about ΙΟΩ -cm or lower abrasive. The conventional Grinding material made of the conductive fibers and/or fillers described herein generally has mechanical properties that do not degrade under a stable electric field and avoid degradation in an acid or alkaline electrolyte. The electrically conductive material and any bonding materials are combined to provide the same mechanical properties. If desired, conventional abrasive materials for use in conventional abrasives can also be used. For example, an electroabrasive material, either alone or in combination with a bonding material, has a hardness value of about 100 or less for a polymeric material, which is based on the total US test in Philadelphia, Philadelphia. And materials society (ASTM) measured. In the _ aspect, the electrically conductive material has a Shore D hardness value of about 80 degrees or less to the polymer material. The electrically conductive abrasive portion 310 generally comprises a surface roughness of about 5 mm or less. The polishing pad is generally designed to reduce or minimize the abrasive structure of the substrate surface during mechanical polishing and when biasing to the surface of the substrate, in which the abrasive is A single layer of electrically conductive abrasive material can comprise a plurality of layers of material, including materials or providing a conductive surface to contact the substrate. A paper placed on the support is constructed. In another aspect, the at least one electrically conductive material and the at least one support portion or the bottom surface of the substrate are deposited as a partial cross-sectional view of one embodiment of the abrasive 2〇5. The abrasive 205 shown in Fig. 3 includes a composite abrasive having a conductive polishing portion for polishing the substrate surface and the substrate portion or the bottom portion 320. A conductive abrasive portion 31A can include a conductive abrasive material comprising 28 1285576 conductive fibers and/or conductive fillers as described herein. 310 can include a conductive material dispersed in a polymeric material and comprising a filler. The conductive fiber may be disposed on the third conductive fiber and may be included in the polymer spotting agent; the conductive conductive material generally has a hardness and a coefficient lower than that of the south. In addition to other conductive metals that are softer than copper, the gold and tin are included. The palladium-tin alloy, platinum, and the like do not scratch the abrasive substrate, and the present invention also covers the primary filler. Further, the conductive material grinding portion may comprise a conductive fiber loop or a conductive fiber blended isoform 3 fabric. The electrically conductive abrasive portion 31 can also be composed of a plurality of layers of electrically conductive fabric or fibers. One example of the electrically conductive abrasive portion 310 is a phase of gold and graphite placed in a polyurethane. Other examples, graphite particles and/or carbon fibers in Shixi gum. Other ammonia or gold particles in the substrate. In another embodiment, the electrically conductive abrasive portion describes abrasive particles 366. The abrasive particles 36 are exposed above the conductive abrasive portion 310. The abrasive table 3 60 is generally configured to remove the ground substrate layer ' to expose the underlying metal to the electrolyte and enhance the polishing rate during the process. The particles 360 are ground to destroy the ceramic polymer particles formed in the passive layer on the metal surface. The polymer particles may be solid or may be in the conductive abrasive portion of the conductive fibers and/or the conductive binder. The soft conductive material. - Soft. Soft conductive materials Gold and ceramic composites are inclined. If the size is small enough and the hardness is higher than that of the copper, the conductive loop is lacking, and the coil is formed to form a conductive cloth or an electrical material (for example, the multilayer coated with the nylon fiber is included in the polyurethane or the sample includes the distribution in the poly 3 10 0 a pure state electrochemical reaction having at least some portions of the surface of the abrasive surface of the abrasive particles, examples of which include strength foot porcelain, inorganic, organic or sponges which reduce the wear rate of the ground portion 3 1 0 29 1285576 The material selection unit 320 generally has a smaller direct 彳 导电 导电 导电 导电 导电 导电 导电 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 The system illustrates the ring guide V3 1 〇 and the object support portion 320, but the present invention also covers the electric grind portion 31 〇, the object support portion ^ ^, U rain is not a shape, or an elliptical surface. The invention further covers the guide material supporting the Qiu I month and the conductive polishing part 310,
• β 或兩者可形成線性網狀或帶狀材料者^ 期。- ι物支撐"Ρ 320可包括在研磨製程中可避免ECMP 期間被消耗或損傷的純態物質。例如,該物支撐部可由習 知研磨材料組成’包括聚合物材料,例如聚氨醋以及與填 枓混合的聚氨西旨、聚碳酸醋、聚苯硫喊(pps)、三元乙丙橡 膠(EPDM)、TeflGnTM聚合物或其組合物以及其他用於研 磨材料表面之研磨材料。該物支撐部32〇可為習知軟性材 質,例如經壓縮且浸潰於氨基甲酸酯中的氈式纖維,用以 吸附製程期間施於該研磨物2〇5及該研磨頭13〇間的若干• β or both can form a linear mesh or ribbon material. - ι物 Support "Ρ 320 can include pure substances that can be consumed or damaged during ECMP during the grinding process. For example, the material support portion may be composed of a conventional abrasive material 'including a polymer material such as polyurethane, and a mixture of polyammonium carbonate, polycarbonate, polyphenylene sulfide (pps), EPDM rubber. (EPDM), TeflGnTM polymer or composition thereof, and other abrasive materials used to grind the surface of the material. The material supporting portion 32 can be a conventional soft material, for example, a felt fiber which is compressed and impregnated in a urethane for application to the polishing material 2〇5 and the polishing head 13 during the adsorption process. Several
壓力。該軟性材質可為蕭式A硬度介約2〇及約9〇間的硬 度值。 或者,該物支撐部3 20可由一導電材料所製成,其適 於環繞電解液而不會傷害研磨,其包括導電性的貴金屬或 導電聚合物,用以提供遍及該研磨物的導電性。貴金屬的 範例包括金、鉑、鈀、銥、銖、铑、釕、锇以及其組合物, 其中又以金及顧為佳。材料會與周圍的電解液相作用,例 如銅’其可使用在該等材料因惰性金屬(例如習知研磨材料 30 1285576 或貴金屬)而與周圍電解液絕緣時。pressure. The soft material may have a hardness value of about 2 〇 and a hardness of about 9 萧. Alternatively, the object support portion 3 20 may be made of a conductive material that is adapted to surround the electrolyte without damaging the grinding, and includes a conductive noble metal or conductive polymer to provide electrical conductivity throughout the abrasive. Examples of precious metals include gold, platinum, palladium, rhodium, ruthenium, osmium, iridium, osmium, and combinations thereof, of which gold and Gu are preferred. The material will interact with the surrounding electrolyte, such as copper, which can be used when the materials are insulated from the surrounding electrolyte by inert metals such as conventional abrasive materials 30 1285576 or precious metals.
當該物支樓部320係導電性時,該物支撑部32〇可罝 有較該導電研磨mn)為高的導電性(亦即低電阻率)了 例如該導電研磨部# 31〇與包含銘的物支撐部32"目比, 可具有!·ΟΩ_〇ΓΠ或更低的電阻率(因該物支撐部電阻在。 時為9·81μΩ·叫。導電,物支撐冑32()在研磨期間可提供均 勻偏壓或電流以最小化沿該物表面(例如該物的半徑)的導 電電阻,以均勻遍及該基材表面的陽極分解。導電物支撐 部3 20也可耦接至電源以傳送電力至該導電研磨部分 一般而言,該導電研磨部分3丨〇係藉習知適合與研磨 材料使用及用於研磨製程中的黏結劑黏接至該物支撐部 320。本發明涵蓋其他可將該導電研磨部分31〇連結至該物 研磨部320上的裝置,例如以壓模或層壓方式。該點結劑 依製程所需或製造者所欲可為導電性或介電性。該物支撐 部3 2 0可藉一黏結劑或機械夾固設於一支撐部,例如碟盤 2 06。或者,若研磨物205可僅包括一導電研磨部31〇,而When the object branch portion 320 is electrically conductive, the object supporting portion 32 may have a higher conductivity (that is, a lower resistivity) than the conductive polishing mn). For example, the conductive polishing portion # 31〇 and Ming's object support 32 " mesh ratio, can have! · Ο Ω_ 〇ΓΠ or lower resistivity (since the support resistance of the material is 9.81μΩ · conductive. The material support 胄 32 () can provide uniform bias or current during grinding to minimize the edge The conductive resistance of the surface of the object (e.g., the radius of the object) is decomposed by an anode uniformly distributed over the surface of the substrate. The conductive support portion 32 can also be coupled to a power source to transfer power to the conductive abrasive portion. The conductive polishing portion 3 is suitably bonded to the material support portion 320 by a bonding agent used in the polishing process and used in the polishing process. The present invention contemplates that the conductive polishing portion 31 can be bonded to the object to be ground. The device on the portion 320 is, for example, stamped or laminated. The potting agent may be electrically conductive or dielectric as desired by the process or desired by the manufacturer. The support portion 3 2 0 may be bonded by a bonding agent or The mechanical clip is fixed to a support portion, such as the disk 206. Alternatively, if the abrasive 205 may include only one conductive polishing portion 31,
該導電研磨部分可藉一黏結劑或機械夾固設於_支推部 (例如碟盤206)。 該導電研磨部310及該研磨物205的物支撐部32〇 一般可穿過電解液。數個穿孔可分別形成於該導電研磨部 3 10及物支撐部320中,以幫助液髏流通於其間。該數個 穿孔可讓電解液流過並於製程期間接觸該表面。該等穿孔 可於製造期間設於其中,例如設於導電纖維或織物中的織 布間,或可藉機械方式設置並模造穿透該等材料。該等穿 31 1285576 孔可部份或完全形成穿通個研磨物205層。 310之該等穿孔及該物支撐部3 20之該等穿 以利於液體流通其間。 形成於該研磨物205之該等穿孔350的 磨物中的孔洞,其中該孔洞具有直徑介於約 公釐)至約〇 · 4英吋(1 0公釐)之間。該研磨物 藉約0 · 1 m m及約5 m m之間。例如,穿孔彼 約ο. 1英吋及約1英吋間的距離。 該研磨物205具有約20%至約80%之R 以提供足夠電解液的物質流遍佈該研磨物表 發明亦涵蓋穿孔密度小於或高於此處所述用 通其間之穿孔密度。於一範例中,約50%的 現可提供足夠的電解液,以提供自該基材表 分解。此處所述之穿孔密度係廣義的描述為 括之研磨物的體積。該穿孔密度包括當穿孔 物205中時,該表面或研磨物本體的總計數 穿孔尺寸。 該穿孔尺寸及密度係經選擇以提供i 2〇5至基材表面的均勻電解液分佈。一般而 磨部分310以及物支撐部320兩者之穿孔尺 以及穿孔的組織彼此都會經配置及校準,以 該導電研磨部分31〇及該物支撐部320至該 解液流。 溝槽可設置於該研磨物205中以促進 該導電研磨部 孔可彼此對準 範例包括該研 0.02 英吋(〇.5 20{的厚度可 此可相距一介 i的穿孔密度, 面。然而,本 以控制液體流 穿孔密度以發 面的均句陽極 該等穿孔所包 形成在該研磨 量以及直徑或The electrically conductive abrasive portion can be secured to the yoke (e.g., disk 206) by a bonding agent or mechanical clip. The conductive polishing portion 310 and the object supporting portion 32 of the abrasive 205 can generally pass through the electrolyte. A plurality of perforations may be formed in the conductive polishing portion 3 10 and the object supporting portion 320, respectively, to help the liquid helium flow therebetween. The plurality of perforations allow electrolyte to flow through and contact the surface during processing. The perforations may be provided during manufacture, such as between woven fabrics in electrically conductive fibers or fabrics, or may be mechanically disposed and molded to penetrate the materials. The holes 31 1285576 can partially or completely form a layer of 205 through the abrasive. The perforations of the 310 and the support of the object support portion 3 20 are adapted to facilitate the flow of liquid therebetween. A hole formed in the abrasive of the perforations 350 of the abrasive 205, wherein the hole has a diameter of between about 10,000 Å and about 4 Å (10 mm). The abrasive is between about 0 · 1 m m and about 5 m m. For example, the distance between the perforations and the ο. 1 inch and about 1 inch. The abrasive 205 has a flow of from about 20% to about 80% R to provide a sufficient electrolyte flow throughout the abrasive article. The invention also encompasses a perforation density that is less than or greater than the perforation density used herein. In one example, about 50% of the electrolyte is now available to provide decomposition from the substrate. The perforation density described herein is broadly described as the volume of the abrasive. The perforation density includes the total count perforation size of the surface or the body of the abrasive as it is in the perforations 205. The perforation size and density are selected to provide a uniform electrolyte distribution of i 2〇5 to the surface of the substrate. Generally, the perforated ruler of both the abrading portion 310 and the object support portion 320 and the perforated tissue are configured and calibrated to each other with the electrically conductive abrasive portion 31 and the object support portion 320 to the solution stream. The grooves may be disposed in the abrasive 205 to facilitate alignment of the conductive polishing holes with each other. The example includes a thickness of 0.02 inch (the thickness of the film may be a distance of one hole, the surface. However, In order to control the liquid flow perforation density to the surface of the uniform anode, the perforations are formed in the amount of grinding and diameter or
I過該研磨物 言,該導電研 寸、穿孔密度 充分提供通過 基材表面的電 電解液流經該 32 1285576 研磨物205,藉以提供有效或均勻的電解液流以進行陽極 分解或電鍍製程。該等溝槽可部份形成於單層中,或經多 層中。本發明亦涵蓋可形成於上層或接觸該基材表面之研 磨表面處的溝槽。為提供增加或經控制的電解液流至該研 磨物表面,該等穿孔之一部份或多個部分可與溝槽相連 通。或者,該等穿孔之所有或不將該等穿_孔連通設於該研 磨物205中的溝槽。 被用來促進電解液流動的溝槽的例子包括直線溝 槽、弧形溝槽、同心圓溝槽、徑向溝槽及螺旋溝槽。形成 於研磨物205中的溝槽具有一方形、圓形、半圓形或其它 有助於流遍該研磨物表面的形狀。該等溝槽可彼此相交。 溝槽可被安排成圖案’像是设置在該研磨表面的一又_丫圖 案或一形成在該研磨表面上的一三角形圖案,或它們的組 合用以改善在該基材的表面上的電解液流。 該等溝槽彼此可相距約30密爾(mil)至約300密爾的 間距。通常,形成於研磨物上的溝槽寬度約在5密爾至約 30密爾之間,但其尺寸可隨著研磨的需要而改變。一溝槽 圖案的例子包括約1 〇密爾寬的的溝槽,彼此相距約60密 爾。任何合適的溝槽配置、尺寸、直徑及間距都可被用來 提供所想要的電解液流。其他的剖面及溝槽配置係詳細接 示於2001年10月11曰所申請,目前審查中的美國專利臨 時申請序號第 60/328,434’ 標題為「Method And Apparatus For Polishing Substrates」,其全文係合併於此以供參考。 電解液的輸送可藉由在至少部分的溝槽中形成穿孔用 33 1285576 以改善電解液流來加強,甚至藉用於處理基材之該等溝槽 更均勻的分佈於基材表面,且處理的電解液會藉該穿孔流 進的額外電解液而更新。墊穿孔的範例及溝槽更詳細揭示 於2 001年12月20日所申請之美國專利申請序號第 1〇/〇26,8 54,其全文係合併於此以供參考。I. The abrasive, the density of the perforations provides sufficient flow of electrolyte through the surface of the substrate through the 32 1285576 abrasive 205 to provide an effective or uniform flow of electrolyte for the anodic decomposition or electroplating process. The trenches may be formed partially in a single layer or in multiple layers. The invention also encompasses grooves that may be formed in the upper layer or at the polishing surface that contacts the surface of the substrate. To provide an increased or controlled flow of electrolyte to the surface of the abrasive, one or more portions of the perforations may be in communication with the grooves. Alternatively, all or none of the perforations communicate with the grooves provided in the abrasive 205. Examples of the grooves used to promote the flow of the electrolyte include straight grooves, curved grooves, concentric grooves, radial grooves, and spiral grooves. The grooves formed in the abrasive 205 have a square, circular, semi-circular or other shape that facilitates flow through the surface of the abrasive. The grooves can intersect each other. The grooves may be arranged in a pattern such as a 丫 pattern disposed on the abrasive surface or a triangular pattern formed on the abrasive surface, or a combination thereof to improve electrolysis on the surface of the substrate Liquid flow. The trenches may be spaced apart from one another by a distance of from about 30 mils to about 300 mils. Typically, the width of the grooves formed on the abrasive is between about 5 mils and about 30 mils, but the size can vary as needed for grinding. An example of a trench pattern includes trenches of about 1 mil mil width, about 60 mils apart from one another. Any suitable groove configuration, size, diameter, and spacing can be used to provide the desired electrolyte flow. Other sections and trenches are described in detail in the October 11, 2001 application. The current US Patent Application Serial No. 60/328,434, entitled "Method And Apparatus For Polishing Substrates", full text This is incorporated herein by reference. The delivery of the electrolyte can be enhanced by forming a perforation in at least a portion of the trenches to improve the flow of the electrolyte, even if the trenches for processing the substrate are more evenly distributed over the surface of the substrate and processed The electrolyte will be renewed by the additional electrolyte flowing through the perforations. An example of a perforation of a pad and a groove are disclosed in more detail in U.S. Patent Application Serial No. 1/26,8, filed on Dec.
具有穿孔及溝槽之研磨物的範f列係描述如下。第4圖 係一具有溝槽之研磨物之實施例的俯視圖。該研磨物205 之圓形墊440係圖示具有數個足夠尺寸及組織的穿孔 446,以讓電解液流至基材表面。該等穿孔446彼此相距約 〇·1英吋及約1英吋。該等穿孔可為具有直徑介約〇 〇2英 吋(〇·5公釐)及約〇·4英吋(l〇mm)間的環形穿孔。又,穿孔 的數目於形狀可隨著所使用的設備,處理參數,及ECmp 成分而變動。The range of abrasives with perforations and grooves is described below. Figure 4 is a top plan view of an embodiment of a grooved abrasive. The circular pad 440 of the abrasive 205 is illustrated with a plurality of perforations 446 of sufficient size and organization to allow electrolyte to flow to the surface of the substrate. The perforations 446 are spaced about 1 inch apart and about 1 inch apart. The perforations may be annular perforations having a diameter of between about 2 inches (〇 5 mm) and about 4 inches (10 mm). Also, the number of perforations may vary depending on the equipment used, the processing parameters, and the ECmp composition.
溝槽442係形成於該研磨物205中之該研磨表面 448’以協助由承台202體積溶液之新鮮電解液傳送至該基 材及該研磨物之間的空隙。該等溝槽442可具有不同圖 案,包括第4圖所示在該研磨表面448上一大致圓形的同 心圓溝槽、第5圖所示之一 X-Y圖案以及第6圖所示之三 角形圖案。 第5圖為一研磨藝的另一實施例的頂視圖,該研磨塾 具有設置在一研磨墊540的研磨部548上的χ-γ圖案中的 溝槽542。穿孔546可被設置在垂直及水平的溝槽交會處, 且亦可被設置在一垂直的溝槽,一水平的溝槽,或設置在 該研磨物548上在溝槽542以外的地方。穿孔546及溝槽 34 1285576 5 42被設置在該研磨物的内徑55〇上而該研磨墊544的外 徑5 5 0是沒有穿孔及溝槽的。 第ό圖為设有圖案之研磨物640的另一實施例。在此 實施例中,溝槽被設置成Χ-Υ圖案且具有被對角線地設置 的溝槽645其與Χ-Υ圖案的溝槽642相交會。對角線溝槽 645可被設置成於Χ-Υ溝槽$42夾約3〇度至約6〇度的角 度。穿孔646可被設置在χ-γ溝槽642的交會處,χ-γ溝 槽642與對角線溝槽645的交會處,沿著溝槽642及645, 或设置在該研磨物648上沒有溝槽642,645的地方。穿孔 6 46及溝槽642被設置在該研磨物的内徑650上而該研磨 墊644的外徑650是沒有穿孔及溝槽的。 溝槽圖案(諸如螺旋形溝槽、層層捲繞式溝槽以及渦輪 式溝槽等)的其他範例則更詳細描述於2〇〇1年1〇月π號 申請、現正審查中之美國專利臨時申請序號第6〇/328,434 號’其標題為「Method And Apparatus For Polishing Substrates」,其全文係合併於此以供參考。 除了研磨物2 05中之穿孔及溝槽外,也可浮雕導電研 磨部3 1 0來包括表面紋理。浮雕也可改善電解液、經移除 之基材、副產物以及微粒子的傳送。浮雕也可降低研磨基 材的刮痕,並改變研磨基材及研磨物205間的磨擦力。經 浮雕之表面紋理可均勻分布於該導電研磨部310。浮雕之 表面紋理可包括例如角錐、島嶼型、以圓形、矩形及正方 形及其他幾何形狀相交之結構。本發明涵蓋其他浮雕於導 電研磨部3 1 0上之紋理結構。該經浮雕之表面可覆蓋該導 35 1285576 電研磨部310百分之五至九十五之表面積,例如介於該導 電研磨部310百分之十五至九十之表面積。 導電研磨表面A groove 442 is formed in the abrasive surface 448' of the abrasive 205 to assist in the transfer of fresh electrolyte from the volume of the header 202 to the void between the substrate and the abrasive. The trenches 442 may have different patterns, including a substantially circular concentric circular groove on the polishing surface 448 shown in FIG. 4, one of the XY patterns shown in FIG. 5, and the triangular pattern shown in FIG. . Figure 5 is a top plan view of another embodiment of an abrasive article having grooves 542 disposed in a χ-gamma pattern on a polishing portion 548 of a polishing pad 540. The perforations 546 can be disposed at the intersection of the vertical and horizontal grooves, and can also be disposed in a vertical groove, a horizontal groove, or on the abrasive 548 beyond the groove 542. The perforations 546 and the grooves 34 1285576 5 42 are disposed on the inner diameter 55 of the abrasive and the outer diameter 5 50 of the polishing pad 544 is free of perforations and grooves. The second figure is another embodiment of a patterned abrasive 640. In this embodiment, the grooves are arranged in a Χ-Υ pattern and have diagonally disposed grooves 645 which intersect the grooves 642 of the Χ-Υ pattern. The diagonal groove 645 can be configured to clip the Χ-Υ groove $42 by an angle of about 3 degrees to about 6 degrees. The perforations 646 can be disposed at the intersection of the χ-γ trenches 642, the intersection of the χ-γ trenches 642 with the diagonal trenches 645, along the trenches 642 and 645, or disposed on the abrasive 648 Where the grooves 642, 645 are. Perforations 6 46 and grooves 642 are disposed on the inner diameter 650 of the abrasive and the outer diameter 650 of the abrasive pad 644 is free of perforations and grooves. Other examples of trench patterns (such as spiral trenches, layered trenches, and turbine trenches) are described in more detail in the US application for the 1st, 1st, and 1st year. Patent Provisional Application Serial No. 6/328,434, entitled "Method And Apparatus For Polishing Substrates", the entire disclosure of which is incorporated herein by reference. In addition to the perforations and grooves in the abrasive 205, the conductive polishing portion 310 can also be embossed to include the surface texture. Embossing also improves the delivery of electrolytes, removed substrates, by-products, and microparticles. The relief also reduces scratches in the abrasive substrate and changes the friction between the abrasive substrate and the abrasive 205. The surface texture of the relief can be evenly distributed on the conductive polishing portion 310. The surface texture of the relief may include, for example, pyramids, islands, structures that intersect in a circle, a rectangle, and a square and other geometric shapes. The present invention encompasses other texture structures that are embossed on the conductive polishing portion 310. The embossed surface may cover a surface area of five to ninety-five percent of the electrically conductive portion 310 of the guide 35 1285576, such as a surface area of fifteen to ninety percent of the electrically conductive abrasive portion 310. Conductive abrasive surface
第7A圖係一可用於形成該研磨物205之導電研磨部 3 1 〇的導電織物或織品700之一實施例的頂視部份圖。該 導電織物或織品係由交織織品7 1 0所組成,其如前文所述 係以導電材料塗覆。Figure 7A is a top plan view of one embodiment of a conductive fabric or fabric 700 that can be used to form the electrically conductive abrasive portion 3 1 of the abrasive 205. The conductive fabric or fabric is composed of an interwoven fabric 710 which is coated with a conductive material as previously described.
於一實施例中,於垂直720及水平730方向(示於第7A 圖平面)之該交織織品710的織布或藍狀編織(basket-weave) 圖案係闡示於第7A圖。本發明亦涵蓋其他用以形成該導電 織物或織品700之織品,例如紗線或不同交織、織網或篩網 圖案。於一態樣中,該織品710係經交織以提供該織品700 中之通道740。該等通道740可讓電解液或流體(包括離子以 及電解質化合物)流經該織品700。該導電織品700可放置於 聚合物結合劑中,例如聚氨基甲酸乙酯。導電填料也可放 置於上述之聚合物結合劑中。 第7B圖係置於該物205之物支撐部320上之該導電織 物或織品700的部分截面圖。該導電織物或織品700可放置 呈一或多個置於砝物支撐部320上方之連續層,該物支撐部 包括任一形成於該物支撐部320 f之穿孔350。該織物或織 品7 00可藉一黏結物固定至該物支撐部320。當浸入電解液 時,該織品700適於讓電解質流經該等纖維 '織布或形成於 36 1285576 織物或織700中之通道。中間層也可選擇性的設於該織物 或埤⑽7 0 0以及物支撐部3 2 〇之間。該中間層具可滲透性、 或可包括數個與該等穿孔32〇相對準之穿孔,以供電解液流 經該物205 〇 或者若該等通道74〇被判定不足以讓電解質有效流過 該織。口 700時(例,,如’金屬離子無法擴散其間),該織品7〇〇 也可。又穿孔以增加電解液流通其間。該織品7〇〇 一般可讓電 解液的流率提升約每分鐘2〇加命。 第7C圖係該織物或織品7〇〇之部分截面圖,該織物或 織品700可以數個穿孔75〇作圖案,以匹配該物支撐部32〇 中之穿孔3 50圖案。或者,該等穿孔之若干或全部可不與該 物支撐部320之穿孔350對準。該等穿孔之對準或非對準可 讓操作者或製造商去控制流經用以接觸該基材表面之該研 磨物的電解質流率或體積。 該織品700之範例係交織之藍狀編織,其具有介約^及 約10之纖維寬度,該纖維至少包括一塗覆有金的尼龍纖 維。該纖維之範例如尼龍纖維,該尼龍纖維上約有O hm 之鈷、銅或鎳,並有約2μιη之金置於該鈷、銅或鎳上。 或者,專電織網也可用於該導電織物或織品7〇〇處。該 導電織網可至少包括導電纖維、導電填料或至少一部份之 導電織物700於其中或塗以導電結合劑。該導電結合劑至少 包括一非金屬導電聚合物、或置於一聚合化合物中之導電 材料之複合物。導電填料(諸如石墨粉、石墨片層、石墨纖 37 1285576 維、破纖維、碳粉末、黑炭、塗覆於導電材料中之金屬粒 子或纖維)以及聚合物材料(例如聚氨基曱酸乙酯)之混合 物等可用以形成該導電結合劑。此處所述之該等塗覆有導 電材料之纖維也可作為導電結合劑之導電填料。例如,碳 纖維或塗有金之尼龍纖維也可用於形成導電結合劑。 該導霍結合劑若需要,也可包括若干添加劑以幫助導 電填料及/或纖維之分散,改善聚合物及填料及/或纖維間 之黏結性,並可改善導電結合劑之機械性、熱以及電特性。 可用以改善黏結性之添加劑範例包括環氧樹脂、矽膠、氨 基甲酸酯、聚醯胺或其結合物。 該導電填料及/或纖維以及聚合物材料之組成物也可 用以提供特定特性,例如導電性、黏結性、耐久係數。舉 例來說,該導電結合劑至少包括可連同此處所述之物及製 程使用之導電填料,其重量百分比介約2及約8 5之間。可作 為導電填料以及導電結合劑之材料則詳述於2〇〇1年12月27 曰申請之美國專利申請序號第1〇/〇33,732號,其全文係合 併於此以供參考。 該導電結合劑之厚度介約1公釐及丨〇公釐之間,例如介 約1 〇 _公釐及約1公釐間。多層導電結合劑可施於該導電織 網。該導電織網可以相同方式做為第7B及7C圖所示之導電 織物或織品700。該導電結合劑可以多層方式施於該導電織 網上。於一態樣中,該導電結合劑係在該織網穿孔後施於 該導電織網,以於穿孔製程時保護被暴露之織網部分。 38 1285576 此外,導電底漆(primer)也可在施行導電結合劑之前 先置於該導電織網上,以改善該導電結合劑對導電織網的 黏結性。該導電底漆可以與導電結合纖維相同之材料製 成,並以改變組成物之方式以得具有較該導電結合劑為大 之原料間黏結性。合適之導電底漆材料可具有低於約 lOftQ/cm之電阻,例如介約0.001Q/cin及約32Q/cm間之電 阻0 或者’導電箔(foil)也可用於該導電織物或織品700之 處,如第7D圖所示。該導電箔一般包括金屬箔78〇,其設 於一導電結合劑790中或於該支撐層320上塗有導電結合劑 7 90 °形成金屬箔之範例包括金屬塗覆之織品、導電材料 等’導電材料包括銅、鎳以及鈷及貴金屬(如金、鉑、鈀、 銀、鍊、姥、釕、鐵、錫、鉛以及其組合物,其中又以金、 錫及及銘為佳)。該導電箔也可包括非金屬導電箔板,例如 銅片、碳纖維織網箔。該導電箔也可包括一介電或導電材 料之金屬塗覆織物,例如銅、鎳、錫或金塗覆一尼龍纖維 之織物該導電箔也可包括以前述導電結合材料塗覆之導 電或Μ電材料織品。該導電箔也包括中間連接導電金屬線 或金屬條(例如銅金屬線)之金屬架、金屬篩或金屬網,其 可以前述方,、, j*. ^ 一導電結合材料塗覆之。本發明亦涵蓋此 處形成該金愿令乞 > 甘义厶L t 屬泊之其他材料的使用。 此處所述夕道银^ 、、、《 s 劑 790 可封裝(encapsulate)該金 讓該金屬羯780成為可觀察到能與周圍電解液發 39 1285576In one embodiment, the woven or basket-weave pattern of the interwoven fabric 710 in the vertical 720 and horizontal 730 directions (shown in Figure 7A plane) is illustrated in Figure 7A. Other fabrics, such as yarns or different interwoven, woven mesh or screen patterns, used to form the electrically conductive fabric or fabric 700 are also contemplated by the present invention. In one aspect, the fabric 710 is interwoven to provide a channel 740 in the fabric 700. The channels 740 allow electrolyte or fluid (including ions and electrolyte compounds) to flow through the fabric 700. The electrically conductive fabric 700 can be placed in a polymeric binder such as polyurethane. Conductive fillers can also be placed in the polymeric binders described above. Figure 7B is a partial cross-sectional view of the electrically conductive fabric or fabric 700 placed on the object support portion 320 of the article 205. The conductive fabric or fabric 700 can be placed in one or more continuous layers disposed above the boot support portion 320, the object support portion including any of the perforations 350 formed in the object support portion 320f. The fabric or woven fabric 700 can be secured to the article support portion 320 by a bond. When immersed in the electrolyte, the fabric 700 is adapted to allow electrolyte to flow through the fibers 'wovens or channels formed in the fabric or woven 700 of 36 1285576. The intermediate layer may also be selectively disposed between the fabric or the crucible (10) 700 and the object support portion 3 2 . The intermediate layer is permeable or may include a plurality of perforations aligned with the perforations 32 以 for the electrolyte to flow through the 205 〇 or if the channels 74 〇 are determined to be insufficient for the electrolyte to flow effectively The weaving. At 700 o'clock (for example, if the 'metal ions cannot diffuse between them), the fabric 7 can also be used. Also perforated to increase the flow of electrolyte therebetween. The fabric 7 〇〇 generally increases the flow rate of the electrolyte by about 2 每 per minute. Figure 7C is a partial cross-sectional view of the fabric or fabric 7 which may be patterned with a plurality of perforations 75 to match the pattern of perforations 3 50 in the support 32 〇. Alternatively, some or all of the perforations may not be aligned with the perforations 350 of the substrate support 320. The alignment or misalignment of the perforations allows the operator or manufacturer to control the flow rate or volume of electrolyte flowing through the grind to contact the surface of the substrate. An example of the fabric 700 is a woven interwoven blue woven fabric having a media width of about 10 and a fiber comprising at least one nylon coated nylon fiber. The fiber is, for example, a nylon fiber having about ohm of cobalt, copper or nickel on the nylon fiber and having about 2 μm of gold placed on the cobalt, copper or nickel. Alternatively, a special electric mesh can be used for the conductive fabric or fabric. The electrically conductive web may comprise at least a conductive fiber, a conductive filler or at least a portion of the electrically conductive fabric 700 or coated with a conductive bonding agent. The electrically conductive bonding agent comprises at least a non-metallic electrically conductive polymer or a composite of electrically conductive materials disposed in a polymeric compound. Conductive fillers (such as graphite powder, graphite sheet, graphite fiber 37 1285576 dimension, broken fiber, carbon powder, black carbon, metal particles or fibers coated in conductive materials) and polymer materials (such as polyaminophthalic acid B) A mixture of esters and the like can be used to form the conductive binder. The fibers coated with the electrically conductive material described herein can also serve as electrically conductive fillers for the electrically conductive bonding agents. For example, carbon fibers or gold coated nylon fibers can also be used to form conductive bonding agents. The lead bonding agent may also include a plurality of additives to assist in the dispersion of the conductive filler and/or fibers, improve the adhesion between the polymer and the filler and/or fibers, and improve the mechanical and thermal properties of the conductive bonding agent, if desired. Electrical characteristics. Examples of additives that can be used to improve adhesion include epoxy resins, silicones, urethanes, polyamides or combinations thereof. The conductive filler and/or fiber and the composition of the polymeric material can also be used to provide specific characteristics such as electrical conductivity, adhesion, and durability. For example, the electrically conductive bonding agent comprises at least a conductive filler which can be used in conjunction with the materials and processes described herein at a weight percentage of between about 2 and about 85. The materials which can be used as the conductive filler and the conductive bonding agent are described in detail in the U.S. Patent Application Serial No. 1/33,732, filed on Jan. 27, 2011, which is incorporated herein by reference. The thickness of the conductive bonding agent is between about 1 mm and about 丨〇, for example, between about 1 〇 _ mm and about 1 mm. A multilayer conductive bond can be applied to the conductive web. The conductive web can be made in the same manner as the conductive fabric or fabric 700 shown in Figures 7B and 7C. The electrically conductive bonding agent can be applied to the electrically conductive woven mesh in a multilayer manner. In one aspect, the electrically conductive bonding agent is applied to the electrically conductive web after perforation of the web to protect the exposed web portion during the perforating process. 38 1285576 In addition, a conductive primer may also be placed on the conductive web prior to the application of the conductive bond to improve the adhesion of the conductive bond to the conductive web. The conductive primer can be made of the same material as the conductive bonding fibers, and the composition is changed to have a bonding property larger than that of the conductive bonding agent. Suitable conductive primer materials can have a resistance of less than about 10 ft Q/cm, such as a resistance of between about 0.001 Q/cin and about 32 Q/cm, or a 'foil' can be used for the conductive fabric or fabric 700. As shown in Figure 7D. The conductive foil generally comprises a metal foil 78〇, which is disposed in a conductive bonding agent 790 or coated with a conductive bonding agent on the supporting layer 320. 90°. Examples of forming a metal foil include a metal coated fabric, a conductive material, etc. Materials include copper, nickel, and cobalt and precious metals (such as gold, platinum, palladium, silver, chain, ruthenium, osmium, iron, tin, lead, and combinations thereof, of which gold, tin, and melamine are preferred). The conductive foil may also comprise a non-metallic conductive foil sheet, such as a copper sheet, a carbon fiber woven mesh foil. The conductive foil may also comprise a metal coated fabric of a dielectric or conductive material, such as copper, nickel, tin or gold coated with a nylon fiber fabric. The conductive foil may also comprise a conductive or tantalum coated with the aforementioned conductive bonding material. Material fabric. The conductive foil also includes a metal frame, a metal mesh or a metal mesh in which a conductive metal wire or a metal strip (e.g., a copper metal wire) is connected, which may be coated with a conductive bonding material as described above. The present invention also encompasses the use of other materials in this form to form the Golden Manuscript > Ganyi Lt. Here, the silver s, ^, s agent 790 can encapsulate the gold so that the metal 羯 780 becomes observable to be able to react with the surrounding electrolyte 39 1285576
生起作用的導電金屬,例如銅。該導電箔可如前述設有數 個穿孔。雖然此處並未圖示,然該導電箔可耦接至一導電 金屬線以提供電源偏壓該研磨表面。 該導電結合劑7 9 0可作為導電網或織品7 0 0且可以多層 方式施於該金屬箔7 8 0上。於一態樣中,該導電結合劑7 9 〇 - 係於該金屬箔780作穿孔後施於該金屬箔780,以保護該金 屬箔78 0由該穿孔製程所暴露出的部分。A conductive metal that acts, such as copper. The conductive foil may be provided with a plurality of perforations as described above. Although not illustrated herein, the conductive foil can be coupled to a conductive metal wire to provide a power supply to bias the abrasive surface. The conductive bonding agent 790 can be applied as a conductive mesh or fabric 700 and can be applied to the metal foil 780 in a multilayer manner. In one aspect, the conductive bonding agent 7 9 〇 is applied to the metal foil 780 after the metal foil 780 is perforated to protect the portion of the metal foil 78 0 exposed by the perforation process.
此處所述之該導電結合劑可施於該導電織品700、猪 780或織網上。該結合劑在乾燥及固化後會接著於該織品、 箔或織網上固化。其他包括射出成型、壓模、層壓、壓力 鍋、擠製或該等方法結合之合適製程方法也可用以封裝該 導電織品、織網或箔。熱塑性及熱固性結合劑也可應用之。The electrically conductive bonding agent described herein can be applied to the electrically conductive fabric 700, pig 780 or web. The binder will then cure on the fabric, foil or web after drying and curing. Other suitable process methods including injection molding, compression molding, lamination, pressure cooker, extrusion or a combination of such methods can also be used to encapsulate the electrically conductive fabric, web or foil. Thermoplastic and thermosetting binders are also suitable.
該導電結合劑及該導電箔之金屬箔化合物間的黏結劑 也可藉由於該金屬箔上設數個穿孔(直徑或寬度介約 及約1mm)的方式、或藉由於該金屬箔及該導電結合劑間施 以導電底漆的方式進行強化。該導電底漆可為前述用於織 網之導電底漆相同材料。 第7E圖係一導電織物或織品798之另一實施例的截面 圖,該導電織物或織品可用於形成研磨物2〇5之一導電研磨 部310的下方層792 ^該導電織物或織品可以交織或者非織 布纖維710的方式組成。該等纖維71〇可由一前述之導電材 料形成或塗覆之。非織布纖維的範例包括紡黏(spun_b〇nd) 或熔喷(melt blown)聚合物,以及其他不織布織品。 40 1285576 該導電研磨部310包括一由導電材料組成之上方層 7 94 ^該上方層794包括一與下方層792相對之研磨表面 796 ^該上方層794可具有足夠厚度以將底下之下方層792 的不平整處平順化,藉以提供平坦及平整之研磨表面796 以於製程期間接觸該基材。於一實施例中,該研磨表面796 具有一範圍小於或等於約lmm之厚度,以及範圍小於或等 於約500公釐之表面粗糙度。 該上方層794可由任一導電材料組成。於一實施例中, 該上方層794係由一軟性材料(例如金、錫、鈀、鈀錫合金、 銘或錯及其他較銅為軟之陶瓷複合物、導電金屬、合金) 所形成。該上方層794可選擇性的包括前述黏結材料於其 中’以幫助研磨期間移除該基材之金屬表面上的純態層。 或者,該上方層794可由一非導電性材料組成,其係實 質覆蓋該導電研磨部310但留下該導電研磨部之至少一部 份’以使該導電研磨部310可電性連接該上方層794上一進 行研磨之基材。於上述之配置中,該上方層794可幫助減少 刮痕並避免該導電部310於研磨期間進入任一暴露出的特 徵中。一非導電性上方層794可包括數個穿孔,以讓該導電 研磨部3 1 0維持暴露。 第7F圖係一具有一窗口 702形成其中之研磨物2〇5的 另一實施例。該窗口 702係經配置以讓一感應器7〇4定位於 該研磨物205下,以感應研磨效能之公制指標(metHe indicative)。例如,該感應器704可為一渦電流感應器或一 41 1285576 干涉計或其他感應器。於一實施例中,可產生一準直光束 之該干涉計感應器於製程期間係射於該進行研磨之基材 11 4的一側。反射訊號間之干涉即為該進行研磨之材料層厚 度的指標。可增益於本案之一感應器係描述於Birang等人 於1999年4月13曰所申請之美國專利第5,893,796號中,其 全文係合併於此以供參考。The bonding agent between the conductive bonding agent and the metal foil compound of the conductive foil may also be formed by a plurality of perforations (diameter or width of about 1 mm) or by the metal foil and the conductive material. The bonding agent is reinforced by means of a conductive primer. The conductive primer can be the same material as the conductive primer used for the woven mesh described above. Figure 7E is a cross-sectional view of another embodiment of a conductive fabric or fabric 798 that can be used to form an underlying layer 792 of one of the abrasive pads 310 of the abrasive article 2 - the conductive fabric or fabric can be interwoven Or the composition of the non-woven fabric 710. The fibers 71 can be formed or coated from a previously described electrically conductive material. Examples of non-woven fabrics include spun-b〇nd or melt blown polymers, as well as other nonwoven fabrics. 40 1285576 The conductive polishing portion 310 includes an upper layer 7 94 of electrically conductive material. The upper layer 794 includes an abrasive surface 796 opposite the lower layer 792. The upper layer 794 can have a thickness sufficient to lower the lower layer 792. The unevenness is smoothed to provide a flat and flat abrasive surface 796 for contacting the substrate during processing. In one embodiment, the abrasive surface 796 has a thickness ranging from less than or equal to about 1 mm, and a surface roughness ranging from less than or equal to about 500 mm. The upper layer 794 can be comprised of any electrically conductive material. In one embodiment, the upper layer 794 is formed of a soft material such as gold, tin, palladium, palladium-tin alloy, or other ceramics that are softer than copper, conductive metals, alloys. The upper layer 794 can optionally include the foregoing bonding material therein to aid in the removal of the pure layer on the metal surface of the substrate during polishing. Alternatively, the upper layer 794 may be composed of a non-conductive material that substantially covers the conductive polishing portion 310 but leaves at least a portion of the conductive polishing portion to electrically connect the conductive polishing portion 310 to the upper layer. 794 Previously ground substrate. In the above configuration, the upper layer 794 can help reduce scratches and prevent the conductive portion 310 from entering any exposed features during grinding. A non-conductive upper layer 794 can include a plurality of perforations to maintain exposure of the electrically conductive abrasive portion 310. Fig. 7F is another embodiment in which a window 702 is formed to form the abrasive 2〇5 therein. The window 702 is configured to position a sensor 7〇4 under the abrasive 205 to sense the methe indicator of the polishing performance. For example, the inductor 704 can be an eddy current sensor or a 41 1285576 interferometer or other inductor. In one embodiment, the interferometer sensor that produces a collimated beam is incident on one side of the substrate 14 to be ground during the process. The interference between the reflected signals is an indicator of the thickness of the material layer to be ground. </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;
該窗口 702包括一流體柵706,其可實質避免製程流體 由接觸該遮罩該感應器704之圓盤206之區域流出。該流體 栅706—般係經選擇為可對穿透之訊號呈穿透式(例如,具 有最小或沒有影響或干涉)。該流體柵706可為一分離元 件,例如一塊耦接至該窗口 7 02内之研磨物205的聚氨酯, 或可為一或多層包括該研磨物205,例如,一片位於該導電 部310或該物支撐部、或副襯墊部320下方之聚酯薄膜片。 或者,流體柵706可設於位於該研磨物205及該圓盤206間之 該等層間,例如電極204或其他層。於另一替代配置中,該 流體柵706可設於一與該窗口 702(其中設有感應器)對準之 通道708中。於該等實施例中,該導電部310至少包括數層, 例如一上方層794及一下方層792,該穿透材料706可設於至 少一包括該導電部310之層中,如第7F圖所示。應可理解 的是,該導電研磨物之其他配置(包括此處所述之該等實施 例及其他配置)皆可設計包括一窗口。 研磨表面中之導電元件 42 1285576The window 702 includes a fluid grid 706 that substantially prevents process fluid from flowing out of the area of the disk 206 that contacts the mask 704. The fluid grid 706 is generally selected to be transparent to the transmitted signal (e.g., with minimal or no effect or interference). The fluid grid 706 can be a separate component, such as a polyurethane coupled to the abrasive 205 in the window 702, or can comprise one or more layers including the abrasive 205, for example, a piece located at the conductive portion 310 or the object A polyester film sheet under the support portion or the sub-pad portion 320. Alternatively, fluid grid 706 can be disposed between the layers of abrasive 205 and disc 206, such as electrode 204 or other layers. In another alternative configuration, the fluid grid 706 can be disposed in a channel 708 that is aligned with the window 702 (with an inductor disposed therein). In the embodiments, the conductive portion 310 includes at least several layers, such as an upper layer 794 and a lower layer 792. The penetrating material 706 may be disposed in at least one layer including the conductive portion 310, as shown in FIG. Shown. It should be understood that other configurations of the electrically conductive abrasive, including the embodiments and other configurations described herein, can be designed to include a window. Conducting elements in the ground surface 42 1285576
於另一態樣中,此處所述之該導電纖維及填料可用於 形成有區別的導電元件,其等係設於一研磨材料中以形成 本發明之導電研磨物205。該研磨材料可為一習知研磨材料 或導電研磨材料,例如一置於前文所述之聚合物中之導電 纖維或填料的導電組成物《該導電元件之表面可形成一具 有研磨物之表面的平面,或可延伸於該研磨物表面之一平 面上。導電元件可延伸於該研磨物之表面上幾近約5公釐 處。 雖然下文所闡示的是使用在該研磨材料中具有一特定 結構及配置之導電元件,但本發明亦可涵蓋各個導電纖維 及填料以及由其製成之材料,例如織品,其也可視為導電 元件。此外,雖然此處並未圖示,但下文所述之研磨物描 述可包括具有前述穿孔以及溝槽圖案之研磨物(圖示於第4 及第6圖)’其等圖案配置均可與此處所述之該導電元件相 結合,並於下文詳述之。In another aspect, the electrically conductive fibers and fillers described herein can be used to form distinct electrically conductive elements that are disposed in an abrasive material to form the electrically conductive abrasive 205 of the present invention. The abrasive material may be a conventional abrasive material or a conductive abrasive material, such as a conductive composition of conductive fibers or fillers placed in a polymer as described above. The surface of the conductive member may form a surface having an abrasive. The plane may extend over a plane of the surface of the abrasive. The electrically conductive element can extend over approximately 5 mm of the surface of the abrasive. Although the following illustrates the use of conductive elements having a particular configuration and configuration in the abrasive material, the present invention may also encompass individual conductive fibers and fillers, as well as materials made therefrom, such as fabrics, which may also be considered conductive. element. In addition, although not illustrated herein, the abrasive description described below may include an abrasive having the aforementioned perforations and groove patterns (illustrated in FIGS. 4 and 6). The conductive elements described are combined and are described in detail below.
第8A至8B圖係描述一研磨物8〇〇之一實施例之一上方 及戴面概要圖,該研磨物8 〇〇中設有導電元件。該研磨物8 00 一般包含一本體810,其具有一研磨表面82〇用以於製程期 間接觸該基材。該本體810典型至少包含一介電或聚合物材 料’例如介電聚合物材料(如聚氨酯)。 該研磨表面820具有一或多個開口、溝槽、溝渠或凹坑 83 0形成其中以至少部分承接導電元件84〇。該導電元件840 一般可作設置以具有一共平面之接觸表面850或延伸於一 43 1285576 由該研磨表面820所界定之平面上方。該接觸表面850—般 係經配置(如設有一撓曲、彈性、可彎曲或壓塑性表面)以 於接觸該基材時能與該導電元件840有最大的電性接觸。於 研磨期間,所用之接觸壓力可迫使該接觸表面850進入一與 該研磨表面820共平面之位置。8A to 8B are views showing an upper side of one of the embodiments of the abrasive article 8 and a schematic view of the wearing surface in which the conductive member is provided. The abrasive 800 generally includes a body 810 having an abrasive surface 82 for contacting the substrate during processing. The body 810 typically comprises at least a dielectric or polymeric material such as a dielectric polymeric material such as polyurethane. The abrasive surface 820 has one or more openings, grooves, trenches or dimples 83 formed therein to at least partially receive the conductive elements 84A. The conductive element 840 can generally be configured to have a coplanar contact surface 850 or extend over a plane defined by the abrasive surface 820 by a 43 1285576. The contact surface 850 is generally configured (e.g., provided with a flex, resilient, bendable or compressive plastic surface) to provide maximum electrical contact with the conductive member 840 when in contact with the substrate. The contact pressure used during the grinding can force the contact surface 850 into a position coplanar with the abrasive surface 820.
該本體810—般係經製造使之可藉數個形成其中之穿 孔860渗透至電解液。該研磨物800可具有一穿孔密度,其 介約該研磨物8 1 0之表面區域約2 0 %至8 0 %間以提供足夠電 解液流動,以幫助由該基材表面之均勻陽極溶解。The body 810 is typically fabricated such that it can penetrate into the electrolyte through a plurality of perforations 860 formed therein. The abrasive 800 can have a perforation density that is between about 20% and 80% of the surface area of the abrasive 81 to provide sufficient electrolyte flow to aid in the dissolution of the uniform anode from the surface of the substrate.
該本體810—般包括一介電材料,例如前文所述之習知 研磨材料。該等形成於本體810中之凹坑830—般係配置以 能於製程期間維持該導電元件840,且因此可在形狀及方位 上作變化。於第8A圖所示之實施例中,該等凹坑830為數 個具有一矩形交叉段(設置遍於該研磨表物表面)並於該研 磨物800中心形成一交互連結之「X」或交又圖案870的溝 槽。本發明亦涵蓋其他的交叉段,例如反梯形及圓曲形, 其中該溝槽可接觸該基材表面(如前文所述)。 或者,該等凹坑830(以及設於其中之導電元件840)可 以不規則間距作設置,也可設呈徑向、橫向或垂直等方位, 也可為線性、曲線、同中心、内捲曲線或其他交又段區域。 第8C圖係一連串各個導電元件840徑向設於該本體 810中之上方概要圖,各元件840係物理或電性地藉一間距 物875分隔。該間距物875可為用於該等元件之介電研磨材 44 1285576 料或一介電内連線的一部份’例如^塑膠内連線。或者, 該間距物875可為一段研磨物,其缺少該研磨材料或導電元 件840以避免該導電元件840間形成物理接觸。於上述一分 隔元件配置中,各導電元件840可藉一導電路徑890(例如一 金屬線)個別連接至一電源供應器。The body 810 generally includes a dielectric material such as the conventional abrasive materials described above. The dimples 830 formed in the body 810 are generally configured to maintain the conductive element 840 during processing and thus can vary in shape and orientation. In the embodiment shown in FIG. 8A, the pits 830 are a plurality of "X" or intersections having a rectangular cross section (provided over the surface of the polishing object) and forming an interactive connection at the center of the abrasive 800. The groove of pattern 870 is again. Other cross-sections are also contemplated by the present invention, such as anti-trapezoidal and circular curved shapes, wherein the grooves can contact the surface of the substrate (as previously described). Alternatively, the dimples 830 (and the conductive elements 840 disposed therein) may be disposed at irregular intervals, or may be oriented in a radial, lateral, or vertical orientation, or may be linear, curved, concentric, or involute curves. Or other cross-section areas. 8C is a schematic view of a series of conductive elements 840 disposed radially above the body 810, each element 840 being physically or electrically separated by a spacer 875. The spacers 875 can be a portion of the dielectric abrasive 44 1285576 material or a dielectric interconnect for the components, such as a plastic interconnect. Alternatively, the spacer 875 can be a length of abrasive that lacks the abrasive material or conductive element 840 to avoid physical contact between the conductive elements 840. In the above described arrangement of the spacer elements, each of the conductive elements 840 can be individually connected to a power supply via a conductive path 890 (e.g., a metal line).
再參照回第8A及8B圖,一般係將該導電元件840設於 本體810中以形成該研磨物之一主要電阻或約20 Ω -cm或 更低的主要表面電阻。於該研磨物之一態樣中,該研磨物 之電阻約為2 Ω -cm或更低。該導電元件840 —般具有於持 續電場下不發生降解之機械特性,並可抵抗在酸性或驗性 電解液中的降解。該導電元件840可藉安裝、夾持、黏結劑 或其他任何方法維持於該等凹坑830中。Referring again to Figures 8A and 8B, the conductive element 840 is typically disposed in the body 810 to form a primary resistance of one of the abrasives or a major surface resistance of about 20 Ω-cm or less. In one aspect of the abrasive, the abrasive has a resistance of about 2 Ω-cm or less. The conductive element 840 generally has mechanical properties that do not degrade under a sustained electric field and is resistant to degradation in an acidic or organic electrolyte. The conductive element 840 can be retained in the pockets 830 by mounting, clamping, bonding, or any other means.
於一實施例中,該導電元件840係具有充分撓曲、彈性 或可彎曲性,以於製程期間維持該接觸表面85〇及該基材間 之電性接觸。足夠的撓曲、彈性或可彎曲性材料對導電元 件840而言,與該研磨材料相較下具有類似之蕭式硬度d約 或更小之硬度。而對聚合物材料而言,具有類似蕭式硬 度D約80或更小之硬度的導電元件84〇亦可使用。一撓曲材 枓,例如可彎曲或彎折之纖維材料也可作為導電元件84〇。 吞導電元件840可較研磨材料更具順應性,以避免該導電元 件84〇於研磨期間所引起的高局部性壓力。 埋於第及8B圖所示之實施例中,該導電元件84〇係嵌 至一置放於元件支撐部或副墊815上之研磨表面81〇。該 45 工285576 孔860係穿通研磨表面810及環繞導電元件840之該物 支撐部8 1 5 〇 該導電元件840之一範例包括塗覆一導電材料或導電 填料與聚合物材料相混之介電或導電纖維,例如聚合物基 黏結劑,用^ 用从製造前述之導電(且抗磨損)複合物。該導電 元件840亦可包括導電聚合物材料或前述其他導電材料以 改善電特性。例如,該導電元件至少包括一導電環氧化物 之複合物以及一至少包含塗覆以金及碳或石墨填料於尼龍 纖維上(諸如於該尼龍纖維上塗覆約0.1 μιη鈷、銅或鎳,以 及約2μπι金於尼龍纖維上)的導電纖維,藉以改善該複合物 的導電性’且前述該等係設於聚氨酯本體中。 第8D圖係一研磨物800之另一實施例的截面概要圖, 該研磨物800具有數個導電元件設於其中。該導電元件840 可一般設以具有一共平面之接觸表面,或延伸於該研磨表 面820所界定之一平面上。該導電元件840可包括導電織品 70〇(如前文所述)並將之放置、封裝或纏繞於導電組件845 上。或者各個導電纖維及/或填料可放置、封裝或纏繞於該 導電組件845上《該導電元件845可至少包括一金屬,例如 一前文所述之貴金屬,或其他適用於電研磨製程之導電材 料,例如鋼❶該導電元件8 4 0也可包括該織品及前述黏結材 料之複合物,其中該織品係形成該導電元件840之外接觸 部,而該黏結劑一般係形成内支撐結構。該導電元件840 也可包括一中空管,其具有一矩形截面區域,其中管壁係 46 1285576 以堅硬導電識品7 Ο 0及一前述之結合劑形成之。 一連接器890係用以將該導電元件840耦接至一電源 (未示出)’以於製程期間電性偏壓該導電元件84〇。該連接 器890—般係一金屬線、帶或其他與製程流體相容之導電 器’或具有一覆蓋層或可保護該連接器890不受製程液體影 響的塗層。該連接器890可藉壓模、焊接、疊卡、銅焊 (brazing)、夾嵌、捲邊、鉚接、固定、導電性黏結劑或藉 其他方式或元件耦接至該導電元件840。可用於連接器890 中之材料範例包括絕緣銅、石墨、欽、翻、金、銘、不鏽 鋼以及HASTELOY®導電材料及其他合適材料。 環繞該連接器890之塗層可包括聚合物,例如碳氟化合 物、聚氯乙烯(PVC)以及聚亞醯胺。於第8A圖所示之實施 例中’一連接器890可以該研磨物800之邊緣部輕接至各導 電元件840。或者’該等連接器890可設穿經該研磨物goo 之本體810。於另一實施例中,該連接器890可搞接至一設 於容納槽之導電網栅(未圖示)及/或通過該本體810以電性 耦接該導電元件840。 第9A圖係描述一研磨材料900之另一實施例。該研磨 材料900包括一本體902,其具有一或多個設於一研磨表面 906且至少部分導電之元件904。該導電元件904—般包括複 數可撓曲或可伸縮、且適於在製程同時接觸一基材表面之 導所 分料 部材 少電 至介 由之 係料 維材 纖電 等導 該一 。 覆 物塗 狀由 指一 曲如 彎例 可, 或成 及組 繩所 線料 、 材 維之 纖電 47 1285576 組成之纖維。該纖維在自然狀態下也可為固態或中空,以 降低戒增加纖維之順應性或贊曲性。 於第9A圖所示之實施例中,該導電元件9〇4係數個耦 接至一基座909之導電副元件91>該導電副元件913包括前 述至少部分導電之纖維。該副元件9丨3之範例包括一塗覆金 之尼龍纖維或碳纖維(如前文所述)。該基座909也包括一導 電材料且係耦接至一連接器99〇。該基座909也可以一導電 材料(例如銅)層塗覆之,其於研磨期間可由該研磨墊物分 解出’且一般認為該導電材料層會延長該導電纖維之製程 時間。 該導電元件904 —般係置於形成在該研磨表面9〇6内之 凹坑908中。該導電元件9〇4被定向為相對於該研磨表面9〇6 夾0度至90度間。於該等實施例中,該導電元件9〇4之方位 係垂直該研磨表面906,該導電元件9〇4可部分設於該研磨 表面906上。 該等凹坑908具有一較低安裝部91〇及一上方之空隙部 9 12〇該安裝部9丨〇係經配置以承接該導電元件9〇4之該基座 909,並藉安裝、夾欲、黏結劑或其他方式維持該導電元件 研磨表面906相交 部9 1 0,以讓該導 研磨,而無需設於 904。該空隙部912係設於該凹坑9〇8與該 處。該空隙部912 —般在截面上大於安裝 電元件904在接觸一基材時可彎曲且同時 該基材及該研磨表面9 06間。 第9B圖係描述一研磨物9〇〇之另一實施例,其具有一 48 1285576 •導電表面940及數個分離之導電元件920形成其中。該導電 元件9 2 0至少包括數個以一導電材料塗覆之介電材料纖 維,其等係垂直置於該研磨物2 05之導電表面940且彼此係 水平設置。該研磨物9〇〇之導電元件920 一般係被定向以相 對於一導電表面940夾0度至90度,且可以相對於一與該導 電表面940正交的線被傾斜於任一極的方向上。該導電元件 920係遍及於該研磨墊之長度上而形成(如第9B圖所示),或 可僅置於該研磨墊之所選區域中。該研磨表面上該導電元 件920之接觸高度可幾近約5公釐。包括該導電元件92 0之該 材料直徑係介約1密爾(千分之一英吋)及約10密爾間。該研 磨表面上之高度及該導電元件92 0之直徑可依據所執行之 研磨製程作變化。 該導電元件920具有足夠撓性或彈性以於接觸壓力下 變形’同時維持與一基材表面之電性接觸,藉以降低或最 小化該基材表面之刮痕。於第9A及9B圖所示之實施例中, 該基材表面可僅接觸該研磨物205之導電元件920。該導電 凡件920係經定位以於該研磨物2〇5表面上提供均勻之電流 密度。 該導電元件920係藉一非導電材料或介電材料、黏結劑 或結合劑黏附至該導電表面。該非導電性黏結劑可提供一 介電塗層予該導電表面940,以於該導電表面940及任何環 繞之電解液間提供一電化學阻障層。該接觸表面940可為圓 形研磨塾或線性網狀或帶狀形式之研磨物2〇5。一系列之穿 49 I285576 孔(未圖示)可設於該導電表面940中以提供電解液流通其 間。 雖然此處並未圖示,然該導電板可設於習知研磨材料 之一支樓墊上以定位及處理一旋轉或線性研磨平台上知研 磨物900 ^ 第10Α圖係描述一由導電元件10〇4組成之研磨物1〇〇G 之一實施例的概要立體圖。各導電元件1004一般包括一包 含一迴圈或環1 006其具有設置在形成於該研磨表面1024上 的凹坑1012内之一第一端;1〇〇8及一第二端。每一導電 元件1004可耦合至一接合導電元件用以形成多個延伸於該 研磨表面1024的上方的迴圈1〇〇6。 在圖示於第10A圖的實施例中,每一迴圈1〇〇6都是由 一塗覆以導電材料之纖維所所製成的,且藉由一黏附在該 凹坑1012内的繫線基座1〇14所連結。該迴圈1〇〇6之一範例 係一塗覆以金之尼龍纖維。 在該接觸表面上方之迴圈1006的接觸高度係介於約 〇·5公爱至約2公釐之間且包含該迴圈在内之材料直徑係介 於約1密爾(千分之一英寸)至約5〇密爾之間。該繫線基座 1014可以是一導電材質,如鈦、銅、鉑或鍍銅之鉑。該繫 線基座1014亦可被鍍上一層導電材質,如銅,其可在研磨 期間從研磨塾分解出。咸信於該繫線基座i 〇 i 4上所使用之 導電材料層可作為一犧牲層,用以分解該下方迴圈1〇〇6材 料或繫線基座101 4材料以延長該導電元件1〇〇4的壽命。該 50 1285576 等導電元件1 004可被定向以相對於一研磨表面1〇24夾〇度 至90度且可相對於一與該導電表面1〇24正交的線被傾斜於 任一極的方向上。該導電元件1〇〇4係藉一電連接器1〇3〇耦 接至一電源。 第10Β圖係描述一由導電元件1〇〇4組成之研磨物1〇〇〇 之另一實施例之概要立體圖。該導電元件丨〇〇4至少包括一 金屬線之單數線圈1〇〇5,該金屬線係由一塗覆以導電材料 之纖維(如前文所述)所組成。該線圈1〇〇5係耦接至一設於 一基座1014上之導電組件1〇〇7。該線圈1〇〇5可環繞該導電 組件1007、環繞該基座1014或黏附至該基座1〇14表面。該 導電條可至少包括一導電材料,例如金,且一般包括一不 易化學反應之導電材料,例如金或鉑,以及用於一研磨製 程中之任何電解液。或者,犧牲材料層1〇〇9(例如銅)可設 於該基座1014上。該犧牲材料層1009一般係一化學反應性 較該導電組件1 0 0 7為高之材料,例如銅,藉以於電研磨期 間、或於研磨製程之陽極分解期間優先移除化學反應性材 料(與導電組件1007及線圈1〇〇5之材料相比該導電組件 1007可藉一電連接器1030耦接至一電源。 一偏壓件可被設置在該導電元件與本體之間以提供一 偏壓迫使導電元件遠離該本體並於研磨期間接觸一基材表 面。該偏壓件1 〇 18之範例係圖示於第丨〇B圖。然而本發 明亦涵蓋前文所述之該等導電元件,例如於第8A-8D、9A、 10 A-10D圖所示可使用一偏壓件。該偏壓件是由一彈性物 51 1285576 質或裝置所構成且可以是一壓縮彈簧、一扁平彈餐 彈簧、一發泡的聚合物如發泡的聚胺基甲酸g PORON⑧聚合物)、一彈性體、一氣泡或其它可迫摘 元件的元件或裝置。該偏壓件也可為撓性或彈性材 如撓性泡棉或氣充式軟管,其可用以偏壓該導電元 抵及改善研磨時之基材表面。該經偏壓之導電元件 一具有研磨物表面之平面或可延伸於該研磨物表面 面上方。 第10C圖顯示一研磨物100 0之另一實施例的 體圖,該研磨物1000具有數個導電元件1004,其 該基材中心至邊緣之徑向圖案作設置。該等導電元 對於彼此被間隔15度、30度、45度、60度及90 它們的組合。該等導電元件1 004 —般係間隔開來用 一均勻的電流或電源以研磨該基材。該等導電元件 一步間隔開以防止彼此接觸。該本體1 026的一介電 質的一楔形部分1004可被建構成電氣地隔離該等 件1004。一間距物或下凹區域1060亦被形成在該 中用來將導電元件1 〇〇4彼此間隔開來。導電元件 以如第10A圖所示的為迴圈的形式或如第9B圖所 直延伸的纖維。 第10D圖係描述第10A圖之該導電元件1004之 實施例的概要立體圖。該導電元件1004至少包含係 電纖維1006之一織網或織品(如前所述),其具有一 該研磨表面1024中設於凹槽1012内之第一端1008及 ,、線圈 丨旨(如, L該導電 '料,例 ,件以靠 可形成 之一平 概要立 係以由 件可相 度,或 以提供 可被進 研磨物 導電元 研磨物 1004 可 示的垂 一替代 交織導 形成於 第二端 52 1285576 1010,以形成-用以接觸基材之連續導電表面。該織網 嫉兄奸為一士:夕 a + 丨,Μ ·· 。該織網或In one embodiment, the conductive element 840 has sufficient flexure, elasticity, or bendability to maintain electrical contact between the contact surface 85 and the substrate during processing. Sufficient flexural, elastic or bendable material has a similar hardness of about or less than that of the abrasive element 840. For the polymer material, a conductive member 84 having a hardness similar to a hard hardness D of about 80 or less can also be used. A flexible material, such as a fibrous material that can be bent or bent, can also serve as the conductive member 84. The swallowing conductive element 840 can be more compliant than the abrasive material to avoid the high localized pressure caused by the conductive element 84 during grinding. Embedded in the embodiment shown in Figures 8B, the conductive member 84 is embedded in a polishing surface 81A placed on the component support or subpad 815. The 45 working 285576 hole 860 system passes through the grinding surface 810 and the object supporting portion 8 1 5 surrounding the conductive member 840. An example of the conductive member 840 includes a dielectric material coated with a conductive material or a conductive material mixed with a polymer material. Or conductive fibers, such as polymer based binders, are used to make the aforementioned conductive (and abrasion resistant) composites. The conductive element 840 can also include a conductive polymer material or other conductive material as previously described to improve electrical characteristics. For example, the conductive element comprises at least a composite of conductive epoxide and a coating comprising at least gold and carbon or graphite filler on the nylon fiber (such as coating about 0.1 μm of cobalt, copper or nickel on the nylon fiber, and Conductive fibers of about 2 μπι gold on nylon fibers, thereby improving the conductivity of the composites' and the foregoing are provided in the polyurethane body. Figure 8D is a schematic cross-sectional view of another embodiment of an abrasive 800 having a plurality of electrically conductive elements disposed therein. The conductive element 840 can generally be provided with a coplanar contact surface or extending in a plane defined by the abrasive surface 820. The conductive element 840 can include a conductive fabric 70 (as described above) and be placed, packaged, or wrapped around the conductive component 845. Or each conductive fiber and/or filler may be placed, packaged or wound on the conductive component 845. The conductive component 845 may include at least one metal, such as a precious metal as described above, or other conductive material suitable for use in an electrical polishing process. For example, the conductive element 8040 may also comprise a composite of the fabric and the aforementioned bonding material, wherein the fabric forms a contact portion of the conductive member 840, and the adhesive generally forms an inner support structure. The conductive element 840 can also include a hollow tube having a rectangular cross-sectional area wherein the tube wall 46 1285576 is formed of a hard conductive article 7 Ο 0 and a bond as described above. A connector 890 is used to couple the conductive element 840 to a power source (not shown) to electrically bias the conductive element 84A during processing. The connector 890 is typically a metal wire, tape or other process fluid compatible with the process fluid' or has a cover layer or a coating that protects the connector 890 from process liquids. The connector 890 can be coupled to the conductive element 840 by compression molding, soldering, stacking, brazing, clamping, crimping, riveting, securing, conductive bonding or otherwise. Examples of materials that can be used in connector 890 include insulated copper, graphite, chin, turn, gold, ingot, stainless steel, and HASTELOY® conductive materials and other suitable materials. The coating surrounding the connector 890 can include polymers such as fluorocarbons, polyvinyl chloride (PVC), and polyamidamine. In the embodiment shown in Fig. 8A, a connector 890 can be lightly attached to each of the conductive members 840 at the edge of the abrasive 800. Alternatively, the connectors 890 can be disposed through the body 810 of the abrasive goo. In another embodiment, the connector 890 can be coupled to a conductive grid (not shown) disposed in the receiving slot and/or electrically coupled to the conductive member 840 through the body 810. Figure 9A depicts another embodiment of an abrasive material 900. The abrasive material 900 includes a body 902 having one or more elements 904 disposed on an abrasive surface 906 and at least partially electrically conductive. The conductive member 904 generally includes a plurality of flexible members that are flexible or stretchable, and are adapted to simultaneously contact the surface of a substrate during the process, and the portion of the material to be discharged is less electrically conductive to the material. The coating is made of a piece of fiber such as a bend, or a fiber composed of a wire and a material of a wire. The fiber may also be solid or hollow in the natural state to reduce or increase the compliance or variability of the fiber. In the embodiment shown in Fig. 9A, the conductive elements 9〇4 are coupled to the conductive sub-element 91 of a susceptor 909; the conductive sub-element 913 includes the at least partially conductive fibers. An example of the secondary member 9A3 comprises a gold coated nylon or carbon fiber (as previously described). The pedestal 909 also includes a conductive material and is coupled to a connector 99A. The pedestal 909 can also be coated with a layer of electrically conductive material (e.g., copper) that can be decomposed by the polishing pad during polishing' and is generally believed to extend the processing time of the electrically conductive fiber. The conductive element 904 is typically placed in a recess 908 formed in the abrasive surface 9〇6. The conductive element 9〇4 is oriented between 0 and 90 degrees with respect to the abrasive surface 9〇6. In these embodiments, the orientation of the conductive element 〇4 is perpendicular to the abrasive surface 906, and the conductive element 〇4 can be partially disposed on the abrasive surface 906. The recesses 908 have a lower mounting portion 91〇 and an upper gap portion 9 12 . The mounting portion 9 is configured to receive the base 909 of the conductive member 9〇4, and is mounted and clamped. The conductive element grinding surface 906 intersection portion 910 is maintained, adhesively or otherwise maintained to allow the guide to be ground without being provided at 904. The void portion 912 is provided at the pit 9〇8 and there. The void portion 912 is generally larger in cross-section than the mounting electrical component 904 can be bent while contacting a substrate while the substrate and the abrasive surface 906. Figure 9B depicts another embodiment of an abrasive 9 having a 48 1285576 conductive surface 940 and a plurality of discrete conductive elements 920 formed therein. The conductive element 902 includes at least a plurality of dielectric material fibers coated with a conductive material, which are disposed perpendicularly to the conductive surface 940 of the abrasive 205 and are horizontally disposed from each other. The conductive member 920 of the abrasive 9 is generally oriented at 0 to 90 degrees with respect to a conductive surface 940 and may be inclined to the direction of either pole with respect to a line orthogonal to the conductive surface 940. on. The conductive element 920 is formed over the length of the polishing pad (as shown in Figure 9B) or may be placed only in selected areas of the polishing pad. The contact height of the conductive member 920 on the abrasive surface can be approximately 5 mm. The material comprising the conductive element 92 0 has a diameter of between about 1 mil (thousandths of an inch) and about 10 mils. The height of the polishing surface and the diameter of the conductive member 92 0 can vary depending on the polishing process being performed. The conductive element 920 is sufficiently flexible or resilient to deform under contact pressure while maintaining electrical contact with a substrate surface to reduce or minimize scratches on the surface of the substrate. In the embodiment illustrated in Figures 9A and 9B, the surface of the substrate may only contact the conductive element 920 of the abrasive 205. The conductive member 920 is positioned to provide a uniform current density across the surface of the abrasive 2〇5. The conductive element 920 is adhered to the conductive surface by a non-conductive or dielectric material, a binder or a bonding agent. The non-conductive adhesive provides a dielectric coating to the conductive surface 940 to provide an electrochemical barrier layer between the conductive surface 940 and any surrounding electrolyte. The contact surface 940 can be a circular abrasive or a linear mesh or strip of abrasive 2〇5. A series of holes 49 I285576 holes (not shown) may be provided in the conductive surface 940 to provide electrolyte flow therebetween. Although not shown here, the conductive plate may be disposed on a support pad of a conventional abrasive material to position and process a rotating or linear polishing platform. The workpiece is described by a conductive member 10 A schematic perspective view of one embodiment of the abrasive 1〇〇G composed of 〇4. Each of the conductive elements 1004 generally includes a loop or ring 1 006 having a first end disposed within a recess 1012 formed in the abrasive surface 1024; a first end and a second end. Each of the electrically conductive elements 1004 can be coupled to a bonded electrically conductive element for forming a plurality of loops 1〇〇6 extending above the abrasive surface 1024. In the embodiment illustrated in Fig. 10A, each loop 1〇〇6 is made of a fiber coated with a conductive material, and by a system adhered to the pit 1012. The line bases 1〇14 are connected. An example of this loop 1〇〇6 is a nylon-coated nylon fiber. The contact height of the loop 1006 above the contact surface is between about 公5 gong to about 2 mm and the diameter of the material including the loop is about 1 mil (one thousandth Inches) to between about 5 mils. The tether base 1014 can be a conductive material such as titanium, copper, platinum or copper plated platinum. The susceptor base 1014 can also be plated with a layer of electrically conductive material, such as copper, which can be decomposed from the abrasive raft during grinding. The conductive material layer used on the susceptor base i 〇i 4 can be used as a sacrificial layer for decomposing the lower loop 1 〇〇 6 material or the susceptor base 101 4 material to extend the conductive element 1 〇〇 4 life. The conductive member 1 004 of the 50 1285576 or the like can be oriented to be clamped to an angle of 90 degrees with respect to an abrasive surface 1 〇 24 and can be inclined to the direction of either pole with respect to a line orthogonal to the conductive surface 1 〇 24 on. The conductive element 1〇〇4 is coupled to a power source by an electrical connector 1〇3〇. Fig. 10 is a schematic perspective view showing another embodiment of an abrasive 1 consisting of a conductive member 1?4. The conductive member 丨〇〇4 includes at least a single-wire coil 1〇〇5 of a metal wire composed of a fiber coated with a conductive material (as described above). The coil 1〇〇5 is coupled to a conductive component 1〇〇7 disposed on a susceptor 1014. The coil 1〇〇5 can surround the conductive component 1007, surround the base 1014, or adhere to the surface of the base 1〇14. The conductive strip may comprise at least one electrically conductive material, such as gold, and typically comprises a non-chemically reactive electrically conductive material, such as gold or platinum, and any electrolyte used in a polishing process. Alternatively, a sacrificial material layer 1 〇〇 9 (e.g., copper) may be disposed on the pedestal 1014. The sacrificial material layer 1009 is generally a material having a higher chemical reactivity than the conductive component 110, such as copper, whereby the chemically reactive material is preferentially removed during electro-grinding or during anodic decomposition of the polishing process (and The conductive component 1007 and the material of the coil 1〇〇5 can be coupled to a power source by an electrical connector 1030. A biasing member can be disposed between the conductive component and the body to provide a bias The conductive member is moved away from the body and contacts a surface of the substrate during polishing. An example of the biasing member 1 is shown in Figure B. However, the present invention also encompasses the conductive members described above, for example A biasing member can be used as shown in Figures 8A-8D, 9A, 10A-10D. The biasing member is formed of an elastic material 51 1285576 or a device and can be a compression spring or a flat spring. , a foamed polymer such as foamed polyglycolate (PO PORON 8 polymer), an elastomer, a bubble or other element or device that can force the component. The biasing member can also be a flexible or resilient material such as a flexible foam or a gas filled hose that can be used to bias the conductive element against the surface of the substrate during polishing. The biased conductive element has a plane with the surface of the abrasive or may extend above the surface of the abrasive. Figure 10C shows a volume diagram of another embodiment of an abrasive 100 having a plurality of electrically conductive elements 1004 having a radial pattern of center to edge of the substrate. The conductive elements are separated from each other by a combination of 15 degrees, 30 degrees, 45 degrees, 60 degrees, and 90 degrees. The conductive elements 1 004 are typically spaced apart to polish the substrate with a uniform current or power source. The conductive elements are spaced apart in one step to prevent contact with each other. A wedge portion 1004 of a dielectric of the body 1 026 can be constructed to electrically isolate the components 1004. A spacer or recessed region 1060 is also formed therein for spacing the conductive elements 1 〇〇 4 from each other. The conductive member is in the form of a loop as shown in Fig. 10A or a fiber extending as shown in Fig. 9B. Fig. 10D is a schematic perspective view showing an embodiment of the conductive member 1004 of Fig. 10A. The conductive element 1004 includes at least one of the woven mesh or fabric (as described above) having a first end 1008 of the abrasive surface 1024 disposed in the recess 1012, and a coil L, the conductive material, for example, the member may be formed by a flat profile to form a phase, or to provide a vertical interlacing guide that can be introduced into the abrasive conductive element abrasive 1004. Two ends 52 1285576 1010 to form - a continuous conductive surface for contacting the substrate. The woven net is a sergeant: a singer + + 丨, Μ · ·.
1024上方,如第1〇Α圖所示。該導電元件1〇〇4可藉數個連 接至該導電基座1〇14之電連接器1〇3〇耦揍至一電源。 1010, 第1 〇Ε圖係顯示形成該導電元件1 004之另一實施例的 部分概要立體圖,該導電元件1〇〇4具有可將該導電元件固 定至該研磨物之本體丨〇2 6。通道1〇5〇形成於該研磨物的本 體1024中與導電元件1〇〇4之溝槽1〇7〇相交會。一插入件 1055被設置在通道105〇中。該插入件1〇55包含一導電材 料,如金或與導電元件1006相同的材質。連接器1〇3〇然後 可被設置在通道1055中並與該插入件1055相接觸。該等連 接器1030可賴接至一電源。該導電元件loo#的端部ίου可 與插入件1055相接觸以供電流通過。導電元件10Q4的端部 1075與連接器1〇3〇然後藉由介電質插入件1〇6〇而被固定於 導電的插入件1 055上。本發明亦涵蓋提供導電元件1〇〇4的 每一迴圈1006沿著該導電元件1004的長度上相隔一間距的 通道,或只在導電元件1〇〇4的兩端上的通道。 第11A-C圖係說明前述一系列導電材料之迴路或環之 彈性能力的概要側面圖^ 研磨物11 0 0至少包含一設於一 副墊1120(形成於一具有溝槽或凹槽1140於其中之墊支撐 部1130上)上之研磨表面ΠΙΟ。一至少包含介電材料迴路或 53 1285576 環11 5 0(其並以導電材料塗覆)之導電元件丨丨42係置於該凹 槽11 70中之一繫基座1155上並與一電接觸窗1145相聯繫。 基材1160係與該研磨物11〇〇相接觸並與該研磨物11〇〇表面 進行相對移動。當該基材接觸該導電元件η 42時,迴圈ιΐ5〇 會壓縮進入該凹槽11 40同時與基材1160維持電性接觸(如 第11Β圖所示)。當基材移動一足夠,距離至不再接觸該導電 元件11 42時,該彈性迴圈11 5 〇會回到未壓縮形狀以進行另 外製程,如第11 C圖所示。 導電研磨墊之進一步範例係描述於2001年12月27日所 申請之美國專利臨時申請序號第10/033,732號,其全文係 合併於此以供參考。 電源應用 於前文敘述中,電源可藉使用一連接器的方式或電源 傳遞元件而耦接至該研磨物205。電源傳遞元件更詳細揭示 於2001年12月27日所申請之美國專利臨時申請序號第 1 0/033,732號,其全文係合併於此以供參考。 現在回到第11 Α-11C圖,電源可藉使用電接觸窗1145 的方式耦接至導電元件I1 40,-該電接觸窗U 45包括置於該 等溝槽或凹槽117〇(形成於該研磨塾中)中之導電板或安裝 部。於第11 A圖所示之實施例中,該導電元件11 40係安裝 於一金屬板(例如金)上’該金屬板安裝於一支樓部上,例 如圓盤206。或者該電接觸窗也可設於一導電元件及一研磨 54 1285576 墊材料間之一研磨墊材料上,例如於該導電元件8 4 0及本體 8 10間(如第8Α及8Β圖所示)。該等電接觸窗接著藉導線(未 示出)耦接至一電源,如前文所述示於第8A-8D圖。Above 1024, as shown in Figure 1. The conductive element 1〇〇4 can be coupled to a power source via a plurality of electrical connectors 1〇3 connected to the conductive base 1〇14. 1010, a first perspective view showing a partial schematic perspective view of another embodiment of forming the conductive element 1 004 having a body 丨〇 26 that can secure the conductive element to the abrasive. The channel 1〇5〇 is formed in the body 1024 of the abrasive to intersect the groove 1〇7〇 of the conductive member 1〇〇4. An insert 1055 is disposed in the channel 105A. The insert 1 〇 55 comprises a conductive material such as gold or the same material as the conductive element 1006. The connector 1〇3〇 can then be placed in the channel 1055 and brought into contact with the insert 1055. The connectors 1030 can be connected to a power source. The end of the conductive element loo# can be brought into contact with the insert 1055 for current to pass therethrough. The end 1075 of the conductive element 10Q4 and the connector 1〇3 are then secured to the conductive insert 1 055 by a dielectric insert 1〇6〇. The present invention also contemplates providing a channel of each of the loops 1006 of the conductive elements 1〇〇4 along the length of the conductive elements 1004, or a channel only on both ends of the conductive elements 1〇〇4. 11A-C are schematic side views showing the elastic properties of the loop or ring of the aforementioned series of conductive materials. The abrasive 1100 includes at least one spacer 1120 (formed in a groove or groove 1140). The polishing surface on the pad support portion 1130) is polished. A conductive element 42 comprising at least a dielectric material loop or 53 1285576 ring 1150 (which is coated with a conductive material) is placed on one of the recesses 11 70 and is in electrical contact with one of the recesses 110 Window 1145 is associated. The substrate 1160 is in contact with the abrasive 11〇〇 and moves relative to the surface of the abrasive 11〇〇. When the substrate contacts the conductive element η 42 , the loop ΐ 5 〇 is compressed into the recess 11 40 while maintaining electrical contact with the substrate 1160 (as shown in Figure 11). When the substrate is moved enough that the distance is no longer in contact with the conductive member 11 42 , the elastic loop 11 5 〇 returns to the uncompressed shape for additional processing, as shown in Figure 11C. A further example of a conductive polishing pad is described in U.S. Patent Application Serial No. 10/033,732, filed on Dec. Power Supply Application In the foregoing description, the power source can be coupled to the abrasive 205 by means of a connector or power transfer component. The power transfer component is disclosed in more detail in U.S. Patent Application Serial No. 10/033,732, filed on Dec. Returning now to the 11th-11th C chart, the power source can be coupled to the conductive element I1 40 by means of an electrical contact window 1145, the electrical contact window U 45 being disposed in the trench or recess 117 〇 (formed in a conductive plate or mounting portion in the polishing crucible. In the embodiment shown in Fig. 11A, the conductive member 11 40 is mounted on a metal plate (e.g., gold). The metal plate is mounted on a floor portion such as a disk 206. Alternatively, the electrical contact window may be disposed on a conductive pad and a polishing pad material between the pads of the material, for example, between the conductive component 804 and the body 8 10 (as shown in Figures 8 and 8). . The electrical contact windows are then coupled to a power source by wires (not shown) as shown in Figures 8A-8D.
第12A-1 2D圖係一研磨物之實施例的上方及側面概要 圖,該研磨物具有數個連接至一電源之擴充部(未示出)。 該電源可提供電流載送能力4亦即’該陽極偏壓制一基材 表面以於ECMP製程中進行陽極分解。該電源可藉一或多各 導電接觸窗連接至該研磨物,其中該等接觸窗係繞設於該 導電研磨部及/或該研磨物之該物支撐部。一或多個電源可 藉該一或多個接觸窗連接至該研磨物,以於該基材表面部 分形成不同偏壓或電流。或者’一或多條導線也可形成於 該導電研磨部及/或該物支撐部中,而該等導線係耦接至電 源。Section 12A-1 2D is an upper and side schematic view of an embodiment of an abrasive having a plurality of extensions (not shown) coupled to a power source. The power supply can provide a current carrying capability 4, i.e., the anode biases a substrate surface for anodic decomposition in an ECMP process. The power source can be coupled to the abrasive by one or more conductive contact windows, wherein the contact windows are wound around the conductive polishing portion and/or the object support portion of the abrasive. One or more power sources may be coupled to the abrasive by the one or more contact windows to form different bias or currents on the surface portion of the substrate. Alternatively, one or more wires may be formed in the conductive polishing portion and/or the object support portion, and the wires are coupled to the power source.
第12A圖係一導電研磨墊之一實施例的上平面圖,其 中該研磨墊係藉一導電連接器耦接至一電源。該導電研磨 部可具有數個形成於該導電研磨部1210擴充部(例如一拱 座、獨立插頭),而該導電研磨部寬度均大於該物支撐部 1220。該等擴充部係藉一連接器1225耦接至一電源,以提 供電流至該研磨物205。_於第12B圖中,擴充部1215可形成 以由該導電研磨部1210之平面平行或橫向延伸,並延伸超 出該研磨支撐部1220之直徑。該穿孔及溝槽之圖案係示於 .第6圖中。 第12B圖係一連接器1225之一實施例的截面概要圖, 55 1285576 該連接器1 2 2 5係經由一導電路徑1 2 3 2 (例如一金屬線)耦接 至一電源(未示出)。該連接器包括一連接至該導電路徑 1232之電聯接器1234,且係藉一導電固定物1230(如螺釘) 電性耦接至該擴充部1215之該導電研磨部1210。螺栓123 8 也可耦接至用以將該導電研磨部1210固定於其間之導電固 疋物1 2 3 0。數個間距物-1 2 3 6,例如墊圈,可設於該導電研 磨部1210及該固定物1230及螺栓1238之間。該等間距物 1 236可至少包含一導電材料。該固定物123〇、電聯接器 1234、該等間距物1236以及螺栓1238可由導電材料製成, 例如金、銘、鈦、紹或鋼。若材料(如鋼)會與所用之電解 液發生反應’則該材料可覆以一與電解液呈鈍態之材料, 例如翻。雖然此處並未圖示,含該導電固定物之可替代實 施例也包括導電鉗、導電黏結帶或導電黏結劑。 第12C圖係一經由支撐部ι26〇(例如第2圖所示之一平 台或圓盤20 6之上表面)耦接至一電源(未圖示)之連接器 1225之一實施例的截面概要圖。該連接器1225至少包含一 固定物1240’例如螺釘或螺栓,其具有夠長度以穿通該擴 充部1215之導電研磨部121〇以耦接該支撐部126〇。一間距 物1242可设於該導電研磨部121〇及該固定物124〇之間。 該支撐部—般適用以承納該固定物12 40。孔徑124 6可 形成於該支揮部126〇之表面中以承納第12C圖所示之固定 物。或者,一電聯接器可藉一與一支撐部126〇相耦接之固 定物而认於該固定物1240及該導電研磨部1210間。該支撐 56 1285576 P1260可藉一導電路徑1232(例如一金屬線)連接至一電 源,或連接至一設於一研磨平台或處理室外、或集.成於一 研磨平台或處理室之電源,以提供與該導電研磨部121〇之 電性連接。該導電路徑1232可與該支撐部126〇整合或由該 支擇部1260延伸出(如第12B圖所示)。Figure 12A is a top plan view of one embodiment of a conductive polishing pad coupled to a power source by a conductive connector. The conductive polishing portion may have a plurality of expansion portions (e.g., an abutment, a separate plug) formed on the conductive polishing portion 1210, and the conductive polishing portion has a width greater than the object supporting portion 1220. The extensions are coupled to a power source by a connector 1225 to provide current to the abrasive 205. In Fig. 12B, the expansion portion 1215 may be formed to extend parallel or laterally from the plane of the conductive polishing portion 1210 and extend beyond the diameter of the polishing support portion 1220. The pattern of the perforations and grooves is shown in Fig. 6. 12B is a schematic cross-sectional view of an embodiment of a connector 1225, 55 1285576. The connector 1 2 2 5 is coupled to a power source via a conductive path 1 2 3 2 (eg, a metal wire) (not shown) ). The connector includes an electrical connector 1234 that is coupled to the conductive path 1232 and electrically coupled to the conductive polishing portion 1210 of the extension 1215 by a conductive fixture 1230 (such as a screw). The bolt 123 8 can also be coupled to a conductive solid 1 2 3 0 for securing the conductive polishing portion 1210 therebetween. A plurality of spacers -1 2 3 6, such as washers, may be disposed between the conductive polishing portion 1210 and the fixture 1230 and the bolts 1238. The spacers 1 236 can comprise at least one electrically conductive material. The fixture 123, the electrical connector 1234, the spacers 1236, and the bolts 1238 can be made of a conductive material such as gold, metal, titanium, steel or steel. If a material (such as steel) reacts with the electrolyte used, the material may be coated with a material that is passive with the electrolyte, such as a turn. Although not illustrated herein, an alternative embodiment comprising the conductive fixture also includes a conductive clamp, a conductive adhesive tape or a conductive adhesive. Figure 12C is a cross-sectional view of an embodiment of a connector 1225 coupled to a power source (not shown) via a support portion ι 26 〇 (e.g., one of the platforms shown in Figure 2 or the upper surface of the disk 206) Figure. The connector 1225 includes at least one fixture 1240' such as a screw or bolt having a length sufficient to pass through the conductive polishing portion 121 of the expansion portion 1215 to couple the support portion 126. A spacer 1242 may be disposed between the conductive polishing portion 121A and the fixture 124A. The support is generally adapted to receive the fixture 12 40. Aperture 124 6 may be formed in the surface of the branch portion 126 to receive the fixture shown in Fig. 12C. Alternatively, an electrical connector can be recognized between the fixture 1240 and the conductive polishing portion 1210 by a fixture coupled to a support portion 126b. The support 56 1285576 P1260 can be connected to a power source by a conductive path 1232 (for example, a metal wire), or can be connected to a power supply provided on a grinding platform or a processing chamber, or integrated into a grinding platform or a processing chamber. An electrical connection is provided to the conductive polishing portion 121A. The conductive path 1232 can be integrated with or extended from the support portion 126 (as shown in Fig. 12B).
於進一步實·施例中,該固定物124〇可為該支撐部 126〇(延伸過該導電研磨部1215,並藉一螺栓1248固定,如 第121)圖所示)之一集成擴充部。In a further embodiment, the fixture 124 can be an integrated extension of the support portion 126 (extending through the conductive polishing portion 1215 and secured by a bolt 1248, as shown in FIG. 121).
第12E及12F圖顯示提供電源予一研磨物127〇之另一 實施例的侧面概要及分解立體圖,該研磨物丨2 7 〇具有一設 於一研磨部1280及一物支撐部1290間的電源聯接器1285。 該研磨部1280可由一前文所述之導電研磨材料製成,或包 括數個前述之導電元件1275。該等導電元件1275可彼此間 為物理上絕緣,如第12F圖所示。該形成於該研磨表面中 之導電元件127 5係適於電性接觸該電聯接器1285,例如藉 由該元件之一導電基座。 該電聯接器1285可至少包含一金屬内連線元件1275, 多條内連線元件1275之平行金屬線、多條獨立連接元件 1275之金屬線或一連接元件1275至一或多個電源之金屬線 織網内連線元件。耦接至獨立金屬線及元件之獨立電源可 具有不同之施加電源,同時該等内聯之金屬線及元件可提 供均勻電源給該等元件。該電源聯接器1 285可覆蓋該研磨 物之直徑或寬度之一部份或全部。第1 2F圖中之該電源聯 57 1285576 接器1285係一連接元件1275之金屬線織網内連接元件的範 例。該電聯接器1 285可藉導電路徑1 287(例如金屬線)連接 至一電源,或連接至一該設於一研磨平台或處理室外、或 集成於一研磨平台或處理室之電源,以提供與該導電研磨 部1 2 1 0之電性連接° 研磨表面中之研磨元件12E and 12F are side elevational and exploded perspective views of another embodiment of providing a power source to a polishing material 127, the polishing material 〇27 〇 having a power supply disposed between a polishing portion 1280 and an object support portion 1290. Coupler 1285. The abrasive portion 1280 can be made of a conductive abrasive material as previously described, or can include a plurality of the aforementioned conductive elements 1275. The conductive elements 1275 can be physically insulated from one another as shown in Figure 12F. The conductive element 127 5 formed in the abrasive surface is adapted to electrically contact the electrical connector 1285, such as by a conductive base of the component. The electrical connector 1285 can include at least one metal interconnecting component 1275, a plurality of interconnecting wires of the interconnecting component 1275, a plurality of wires connecting the individual connecting components 1275, or a connecting component 1275 to one or more metal sources. Wire mesh components within the wire mesh. The separate power supplies coupled to the individual wires and components can have different applied power sources, and the inline wires and components can provide a uniform power supply to the components. The power connector 1 285 can cover part or all of the diameter or width of the abrasive. The power source 57 1285576 connector 1285 in Figure 1 2F is an example of a wire mesh interconnecting component of the connecting component 1275. The electrical connector 1 285 can be connected to a power source by a conductive path 1 287 (such as a metal wire), or can be connected to a power source disposed outside a polishing platform or a processing chamber, or integrated into a grinding platform or processing chamber to provide Electrically connected to the conductive polishing portion 1 2 10 ° grinding element in the polishing surface
第13A-B圖係該導電物1400之另一實施例的上方及截 面圖。該導電物1400包括多個延伸於該導電物1400之一導 電部1404之一研磨表面1402上的研磨特徵。該研磨特徵可 為研磨粒子(參照第3圖),或可為第14A-B圖所示之不顯著 研磨元件1406。13A-B are top and cross-sectional views of another embodiment of the electrical conductor 1400. The conductive 1400 includes a plurality of abrasive features extending over one of the abrasive surfaces 1402 of one of the conductive members 1400. The abrasive feature can be abrasive particles (see Figure 3) or can be an insignificant abrasive element 1406 as shown in Figures 14A-B.
於一實施例中,該研磨元件1406係數個接收於各個插 槽1408(形成於該導電物1400之研磨表面1402中)中的棒狀 物。該研磨元件1406 一般由該研磨表面14 02延伸出,且係 配置以移除正進行研磨之基材之金屬表面的純態層’藉以 將下方金屬暴露至電解液及電化學活動,以於製程期間提 升研磨率。該研磨元件1406係由陶瓷、無機、有機或聚合 物材料等夠強材質形成’以破壞該金屬表面上所形成之純 態層。一範例係一由習知研磨墊(例如設於該導電物1 4 〇 〇 上之聚氨S旨研磨墊)製成之棒或條狀物。於第13A-B圖所示 之實施例中,該研磨元件1406可具有至少約30度之簫式硬 度D,或足夠硬以磨損該研磨中材料之鈍態層。於一實施 58 1285576 例中,該研磨元件1406較銅為硬。聚合物粒子可為固態或 富彈性,以調整該研磨元件1406之磨損率(相對於周圍導電 部 1404)。 該研磨元件1406可經配置以呈不同幾何狀、或於該研 磨表面1402上呈隨機配置。於一實施例中,該研磨元件14〇6 於該斯磨表面1 4 0 2上係呈徑向,然而,其他方向例如螺旋、 網柵、平行及中心或其他方向等亦可為之。In one embodiment, the polishing element 1406 is a plurality of rods received in respective slots 1408 (formed in the abrasive surface 1402 of the conductive material 1400). The abrasive element 1406 generally extends from the abrasive surface 142 and is configured to remove a pure layer of the metal surface of the substrate being grounded to expose the underlying metal to the electrolyte and electrochemical activity for processing Increase the grinding rate during the period. The abrasive element 1406 is formed of a strong enough material such as ceramic, inorganic, organic or polymeric material to destroy the pure layer formed on the surface of the metal. An example is a rod or strip made of a conventional polishing pad (e.g., a polyurethane-based polishing pad provided on the conductive material 1 4 〇 。). In the embodiment illustrated in Figures 13A-B, the abrasive element 1406 can have a dryness D of at least about 30 degrees, or a hard enough to wear the passive layer of the abrasive material. In an embodiment 58 1285576, the abrasive element 1406 is harder than copper. The polymer particles can be solid or elastic to adjust the wear rate of the abrasive element 1406 (relative to the surrounding conductive portion 1404). The abrasive elements 1406 can be configured to be in a variety of geometries or randomly disposed on the abrasive surface 1402. In one embodiment, the polishing element 14 〇 6 is radially on the smear surface 1 4 0 2 , however, other directions such as a spiral, a grid, a parallel and a center or other directions may also be used.
於一實施例中,一彈性元件1 4 1 0也可設於各個位於該 研磨元件1406及該導電部分1404間之插槽1408中。該彈性 元件1410可讓該研磨元件1406相對於該導電部1404作移 動,藉以對該基材提供更高的柔順性以於研磨期間均勻移 除鈍態層。此外,該彈性元件1 41 0之柔順性可作選擇,以 藉研磨元件1406及該導電部1404之研磨表面1402調整施於 該基材之相關壓力,藉以平衡該鈍態層之移除速率對鈍態 層形成速率,使研磨金屬可最小暴露於該研磨元件1406而 最小化可能產生的刮痕。 由研磨表面延伸之導電球體 第14A-B圖係一導電物1500之一替代實施例的上方及 截面圖。該導電物1500包括數個導電滾動物1506,其係由 該導電物1500之一上方部1504之研磨表面1502延伸出。研 磨期間,該等滾動物1506可藉基材被迫向下至該研磨表面 15 02之相同平面。該内嵌於該導電物15 00中之導電滾動物 59 1285576 可以高電壓耦接至一外部電源(未示出),以於製程期間以 高移除速率研磨基材。 該導電滾動物1506可相對於該上方部1504進行固定, 或可自由滾動。該導電滾動物1 506可為球體、圓柱、銷、 橢球或其他於製程期間不會刮傷基材之形狀。In one embodiment, an elastic member 1 4 10 may also be disposed in each of the slots 1408 between the polishing element 1406 and the conductive portion 1404. The resilient member 1410 allows the abrasive member 1406 to be moved relative to the conductive portion 1404 to provide greater flexibility to the substrate to evenly remove the passive layer during milling. In addition, the flexibility of the elastic member 110 can be selected to adjust the pressure applied to the substrate by the abrasive member 1406 and the polishing surface 1402 of the conductive portion 1404, thereby balancing the removal rate of the passive layer. The passivation layer forms a rate such that the abrasive metal can be minimally exposed to the abrasive element 1406 to minimize possible scratches. Conductive spheres extending from the abrasive surface 14A-B are an upper and cross-sectional view of an alternative embodiment of an electrical conductor 1500. The conductive material 1500 includes a plurality of conductive rolling elements 1506 that extend from the abrasive surface 1502 of the upper portion 1504 of the conductive material 1500. During the grinding process, the rolling elements 1506 can be forced down the substrate to the same plane of the abrasive surface 152. The conductive scroll 59 1285576 embedded in the conductive material 150 can be coupled to an external power source (not shown) at a high voltage to polish the substrate at a high removal rate during the process. The conductive scroll 1506 can be fixed relative to the upper portion 1504 or can be freely rolled. The conductive rolling material 1 506 can be a sphere, a cylinder, a pin, an ellipsoid or other shape that does not scratch the substrate during the process.
於第14B圖所示之實施例中,該導電滾動物15〇6係多 個設於一或多個導電載件1520中之球體。各導電载件152〇 係設於一插槽1 508中,而該插槽係形成於該導電物15〇〇之 研磨表面15 02中。該導電滾動物15 06—般係由研磨表面延 伸出’且係經配置以提供與該基材之金屬表面的電性接 觸。該導電滾動物15 06可由任一導電材料形成、或由一至 少部分塗覆以導電覆蓋層1 525之核心1522所形成。於第 14B圖所示之實施例中,該導電滾動物1506具有一聚合物 核心1 522,其至少部份以一軟性導電材料1 524塗覆之。一 範例為塗覆以導電金層(以銅作為TORLONTM及金層間之 晶種層)之TORLONtm聚合物核心。 於一實施例中,該聚合物核心1 522可由一彈性材料選 出,例如聚氨酯,其在研磨期間當滾動物1 506接觸基材時 會發生變形。當該滾動物1506變形時,該滾動物1506及基 材間的接觸區域會增加,因此可提升該滾動物1 506及導電 層間之電流流動,藉以改善研磨結果。 該導電滾動物1506可配置呈不同形狀、或於該研磨表 面上作隨機配置。於一實施例中,該導電滚動物1 5 06可於 60 1285576 該研磨表面1 502上徑向配置,然而,其他方向例如螺旋、 網栅、平行及中心或其他方向等亦可為之。 於第1 4B圖所示之實施例中,一彈性組件丨5丨〇可設於 該導電載件1520及該導電部15〇4間之各個插槽1 508中。該 彈性組件15 10可讓該等導電滾動物1 506(及載件1 520)相對 於導電部1 504進行移動,藉以提供予基材更佳的柔順性, 以於研磨期間進行更均勻電性接觸。一接觸窗(未示出)也 可形成於前述該導電物1 500中(參照第7F圖)以利製程控 制0 具有插入墊之導電物In the embodiment illustrated in Figure 14B, the conductive rolling elements 15〇6 are a plurality of spheres disposed in one or more of the conductive carriers 1520. Each of the conductive carriers 152 is disposed in a slot 1 508 formed in the abrasive surface 152 of the conductive member 15''. The electrically conductive rolling elements 156 are generally extended from the abrasive surface and are configured to provide electrical contact with the metal surface of the substrate. The conductive rolling material 156 may be formed of any conductive material or may be formed of a core portion 1522 of the conductive cover layer 1 525 by at least a portion thereof. In the embodiment illustrated in Figure 14B, the electrically conductive rolling material 1506 has a polymer core 1 522 that is at least partially coated with a flexible electrically conductive material 1 524. An example is a TORLONtm polymer core coated with a conductive gold layer (with copper as the seed layer between TORLONTM and the gold layer). In one embodiment, the polymer core 1 522 can be selected from an elastomeric material, such as polyurethane, which deforms as the rolling material 1 506 contacts the substrate during grinding. When the rolling object 1506 is deformed, the contact area between the rolling object 1506 and the substrate increases, so that the current flow between the rolling object 1 506 and the conductive layer can be improved, thereby improving the grinding result. The conductive rolling elements 1506 can be configured in different shapes or randomly configured on the polishing surface. In one embodiment, the conductive rolling material 1 5 06 may be radially disposed on the grinding surface 1 502 of 60 1285576, however, other directions such as a spiral, a grid, a parallel and a center or other directions may also be used. In the embodiment shown in FIG. 14B, an elastic component 丨5丨〇 may be disposed in each of the slots 1 508 between the conductive carrier 1520 and the conductive portion 15〇4. The elastic component 15 10 can move the conductive rolling materials 1 506 (and the carrier 1 520) relative to the conductive portion 1 504 to provide better flexibility to the substrate for more uniform electrical properties during grinding. contact. A contact window (not shown) may also be formed in the foregoing conductive material 1500 (refer to FIG. 7F) to facilitate process control 0. Conductive material having an insertion pad
第15圖係一導電物16〇〇之另一實施例的截面圖。該導 電物1600 —般包括一研磨期間適於接觸一基材之導電部 1602、一物支撐部16〇4以及一夾於該導電部16〇2及該物支 撐部1604間的插入墊1606〇該導電部1602及物支撐部16 04 可經配置相似於前述任一實施例或其均等物。黏結層丨608 可設於該插入墊1606之各側以將該插入墊1606耦接至該物 支撐部1604及該導電部1602〇該導電部1602、該物支撐部 1604以及該插入墊1606可藉數種替換方式耦接,藉以讓該 導電物1600之組件在使用壽命到期後可更容易替換為一單 一單元,簡化該導電物16 00之置換、存貨及順序管理。 亦可選擇的是,該支撐部1604可耦接至一電極204並以 該導電物1600進行替換以成為一單一單元。該導電物 61 1285576 1 6 00(可選擇地包括該電極2〇4)也可包括一形成其間之接 觸窗,如前述第7F圖所示。Figure 15 is a cross-sectional view of another embodiment of a conductive material 16". The conductive material 1600 generally includes a conductive portion 1602 adapted to contact a substrate during polishing, an object supporting portion 16〇4, and an insertion pad 1606 sandwiched between the conductive portion 16〇2 and the object supporting portion 1604. The conductive portion 1602 and the object support portion 16 04 can be configured similarly to any of the foregoing embodiments or their equivalents. The bonding layer 608 can be disposed on each side of the insertion pad 1606 to couple the insertion pad 1606 to the object supporting portion 1604 and the conductive portion 1602. The conductive portion 1602, the object supporting portion 1604, and the insertion pad 1606 can be By means of several alternatives, the components of the conductive material 1600 can be more easily replaced with a single unit after the end of its useful life, simplifying the replacement, inventory and order management of the conductive material 160. Alternatively, the support portion 1604 can be coupled to an electrode 204 and replaced with the conductive material 1600 to form a single unit. The conductive material 61 1285576 1 6 00 (optionally including the electrode 2〇4) may also include a contact window formed therebetween as shown in the aforementioned Fig. 7F.
該插入墊1606—般係較研磨物支撐部1604為硬,且係 一堅硬或較該導電部1602為硬者《本發明亦涵蓋插入墊 16 06可較該導電部16 02為軟者。該插入墊1606之硬度係經 選擇以對該導電物1 600提供剛性,如此可延長該導電部 1602及該物支撐部1604之機械壽命,同時改善該導電物 1 6 00的潮濕性,致使研磨表面有更高的平整性。於一實施 例中,該插入墊1606具一小於或等於簫式硬度d值約80之 硬度,該物支撐部1604具有一小於或等於簫式硬度a值約 80之硬度,同時該導電部1602具有小於或等於簫式硬度D 值約100之硬度。於另一實施例中,該插入墊1606具有一小 於或等於35密爾之厚度,同時該物支撐部1604具有小於或 等於約100密爾之厚度。The insert pad 1606 is generally harder than the abrasive support portion 1604 and is rigid or harder than the conductive portion 1602. The present invention also contemplates that the insert pad 16 06 can be softer than the conductive portion 16 02 . The hardness of the insertion pad 1606 is selected to provide rigidity to the conductive material 1 600, so that the mechanical life of the conductive portion 1602 and the object supporting portion 1604 can be extended, and the wettability of the conductive material 1 600 can be improved, resulting in grinding. The surface has a higher level of flatness. In one embodiment, the insertion pad 1606 has a hardness less than or equal to a d-type hardness d value of about 80, and the object supporting portion 1604 has a hardness less than or equal to the 硬度-type hardness a value of about 80, and the conductive portion 1602 Has a hardness less than or equal to the D hardness of the crucible D of about 100. In another embodiment, the insertion pad 1606 has a thickness of less than or equal to 35 mils while the article support 1604 has a thickness less than or equal to about 100 mils.
該插入墊1606可由一介電材料製造以讓電氣路徑可通 過該層板間而建立,而該層板至少包括該導電物1600(亦即 該導電部1602、該插入墊1606以及該物支撐部16〇4之堆 疊)。該電氣路徑可讓該導電物1600浸入或由—導電流體 (•例如電解液)覆蓋之方式建立之。為有利於建立通過該導 電物1600之電氣路徑,該插入墊1606可至少為一可渗透或 可穿透性質以讓電解液流經其間。 於一實施例中,該插入墊1606係由一介電材料(與電解 液及電化學製程相容)所製。而所謂相容的材料包括聚合 62 1285576 物,例如聚氨酯、聚酯、聚酯薄膜、環氧乙烯以及聚碳酸 酯纖維及類似者。 亦可選擇的是,可於該插入墊1606及該導電部1602間 設一導電背襯1610。該導電背襯1610一般等於遍及該導電 部1602之電位’藉以提升研磨均勻度。於該導電部16〇2之 研磨表面具有相同電位可確保該導電部16〇2及該被研磨導 電材料間良好的電接觸性’特別是在該導電材料是剩餘材 料而不再是一連續層時(亦即,殘餘薄膜的分離島塊)。此 外,該導電背襯1610可提供該導電部16〇2機械強度,藉以 增加該導電物1600之使用壽命。該導電背襯161〇的使用對 該等實施例而言(如通過該導電部之電阻約大於 5 00m-ohms及增強導電部1602之機械整合者)有諸多助 益。該導電背襯1610也可用以提昇導電均勻度並降低該導 電部1602之電阻。該導電背概1610可由金屬羯、金屬筛、 金屬塗覆之織網或不織布織品及其他合適且可與研磨製程 相容之導電金屬。於一實施例中,該導電背襯丨61 〇係壓模 至導電部1602。該背襯1610係經配置以不影響該導電部 1 604及該插入墊1 606間之電解液的流動。該導電部丨6〇2可 透過壓模、層壓、注入模造及其他適當方式安裝於該導電 背襯1 6 1 0上。 第16圖係一導電物17〇0之另一實施例的截面圖。該導 電物1700—般包括一導電部1602,其於研磨期間係適於接 觸一基材;一導電背襯1610 ; —物支撐部16〇4以及一插入 63 1285576 塾1706’以三明治方式夾於該導電部16〇2及該物支撐部 1 604之間,具有與前述該導電物16〇〇相似之結構。 於第16圖所示之該實施例中,該插入墊17〇6係由一具 有數個巢室1708之材料所製。該等巢室1 708 一般係填以空 氣或其他流體,並可提供彈性及柔順性以提升製程。該等 巢至可為開啟或關閉在一尺寸範圍介於0.1微米至數毫米 間,例如介於1微米至1亳米。本發明亦涵蓋適用於插入墊 1706的其他尺寸。該插入墊17〇6可為至少可滲透性或可穿 透性’以讓電解液可流經其間。 該插入墊17 06可由一與電解液及電化學製程相容之介 電材料製成。合適之材料包括,但不限於發泡的聚合物(如 發泡聚氨酯及聚酯薄膜)。該插入墊17〇6 一般具有較物支撐 部或副墊1 604為小之壓縮性,且在受到壓力時更具局部獨 立變形的特性。 第17圖係一導電物1800之另一實施例的截面圖。該導 電物1800包括一耦接至一物支撐部18〇4之導電部18〇2。亦 可選擇的是,該導電物1800可包括設於該導電部is 〇2及該 物支撐部1804間之一插入墊及導電背襯(兩者均未圖示 出)。 該導電物1800—般包括數個穿通之孔徑18〇6,藉以讓 電解液或其他製程流體可通過該導電部18 02之上研磨表面 1 808及該物支撐部1 804之下安裝表面之間。該等孔徑1806 之每一者與該上研磨表面1808相交所界定之邊緣1812係呈 1285576 現-輪冑以消除任肖可能或在t程期間,刮I基材的鋒利角 落、毛邊或表面不規則部❶該邊緣1812之輪廓可能包括輻 部、凹槽、錐形物或其他可滑順該邊緣1812並促使到痕最 小化之結構。 於導電部1 802係至少部分由一聚合物形成之該等實施 例中,滑順該邊緣1812可藉由在該聚合物完全固化之前先 形成孔徑1 806的方式實現。因此,該等邊緣1812在剩餘之 聚合物環狀固化期間當該導電部18〇2收縮時將變的較圓。 此外,或者另一替代方式為,該等邊緣1812可藉由在 固化期間或其後施予熱或壓力之至少一者以使之變圓。於 一範例中,該等邊緣1812可以磨光、加熱或火焰處理的方 式來圓潤於該研磨表面1808及該孔徑1806之間在邊緣1812 處的轉變。 於另一範例中,一聚合物導電部1802可由一與鑄模或 鋼模相斥之可塑材料所.製。聚合物導電部18〇2之相斥性質 可形成一表面張力,致使施予該聚合物導電部18〇2之被壓 模應力可將材料由鑄模移離,藉以使該等孔徑丨8 〇 6之邊緣 1 8 1 2在固化時得以變圓。 該等孔徑1806可於組裝前或後穿過該導電物18〇〇而形 成。於一實施例中,該孔徑1 8〇6包括一形成於該導電部丨8〇2 中之第一孔洞1814以及一形成於該物支撐部1804中之第二 孔洞1 8 1 6。於包括一插入墊之該等實施例中,該第二孔洞 1 8 1 6係形成其中。或者,該第一孔洞丨8丨4及該第二孔洞1 8 1 6 65 1285576 之至少一部份可形成於該導電部1 802中。該第一孔洞1814 具有一大於該第二孔洞1816之直徑。在該第一孔洞1814下 之該第二孔洞1 8 1 6的較小直徑可提供環繞該第一孔洞丨8 i 4 之該導電部1 802橫向支撐,藉以改善研磨期間對墊切變及 力矩的抵抗力。因此,於該表面1 808(其係設與下方較小孔 洞同中心)處該包括一較大孔洞之孔徑丨8 〇 6會使該導電部μι 8 02 有較小 的變形 ,同 時最小 化粒子 形成, 因此也 最小化 墊損傷所引起的基材缺陷。 該導電物中之該等孔徑可經由機械方法(例如於所有 層組合一起之前或之後進行公/母打孔)打孔形成之。於一 實施例中’該導電部1 802於導電背襯上之壓模係首先安裝 於插入層上,具有導電背襯之導電部18〇2及插入層則一起 進行機械穿孔,該物支撐部或副墊係分別機械穿孔,並在 穿孔後一起校準。於另一實施例中,所有層則放在一起進 行穿孔。本發明亦涵蓋其他任何穿孔技術及序列。 因此’適用於基材電化學研磨之導電物的各種實施例 均於上文提出。該導電物可對基材表面提供良好柔順性, 以促進均勻電接觸來提升研磨表面。此外,該導電物係經 配置以最小化製程期間的刮痕,有效的降低缺陷產生並可 降低製程成本。 雖然前述係描述本發明之各種實施例,然本發明其他 及進一步的實施例亦可於不悖離本發明之範圍及下文申請 專利範圍所界定之範圍下提出。 66 1285576 【圖式簡單說明】 因此本發明前述所描述之該等態樣可藉由圖示而更 易領會,簡述於上之内容其更明確的描述可藉由參照其實 施例以及附加圖示的方式而獲致更詳細之說明。The insertion pad 1606 can be fabricated from a dielectric material such that an electrical path can be established through the interlayer, and the laminate includes at least the conductive material 1600 (ie, the conductive portion 1602, the insertion pad 1606, and the object support portion) Stack of 16〇4). The electrical path allows the conductive material 1600 to be immersed or covered by a conductive fluid (e.g., an electrolyte). To facilitate establishing an electrical path through the electrical conductor 1600, the insertion pad 1606 can be at least one permeable or permeable property to allow electrolyte to flow therethrough. In one embodiment, the insert pad 1606 is made of a dielectric material (compatible with the electrolyte and electrochemical processes). The so-called compatible materials include polymeric 62 1285576 materials such as polyurethanes, polyesters, polyester films, ethylene oxide and polycarbonate fibers and the like. Alternatively, a conductive backing 1610 can be disposed between the insertion pad 1606 and the conductive portion 1602. The conductive backing 1610 is generally equal to the potential throughout the conductive portion 1602 to enhance polishing uniformity. Having the same potential on the polished surface of the conductive portion 16〇2 ensures good electrical contact between the conductive portion 16〇2 and the ground conductive material, especially when the conductive material is a residual material and is no longer a continuous layer. Time (ie, the separation island of the residual film). In addition, the conductive backing 1610 can provide mechanical strength of the conductive portion 16〇2 to increase the service life of the conductive material 1600. The use of the conductive backing 161 有 is of great benefit to the embodiments (e.g., by a mechanical integrator having a resistance of the conductive portion of greater than about 50,000 m-ohms and enhancing the conductive portion 1602). The conductive backing 1610 can also be used to increase the electrical conductivity uniformity and reduce the electrical resistance of the conductive portion 1602. The conductive back 1610 can be made of a metal crucible, a metal screen, a metal coated web or a non-woven fabric, and other suitable conductive metals that are compatible with the polishing process. In one embodiment, the conductive backing 丨 61 is embossed to the conductive portion 1602. The backing 1610 is configured to not affect the flow of electrolyte between the conductive portion 1 604 and the insertion pad 1 606. The conductive portion 丨6〇2 can be mounted to the conductive backing 1161 through a stamper, lamination, injection molding, and other suitable means. Figure 16 is a cross-sectional view of another embodiment of a conductive material 17?0. The conductive material 1700 generally includes a conductive portion 1602 that is adapted to contact a substrate during polishing; a conductive backing 1610; an object support portion 16A4 and an insert 63 1285576 塾 1706' sandwiched by a sandwich The conductive portion 16〇2 and the object supporting portion 1604 have a structure similar to the conductive material 16〇〇 described above. In the embodiment shown in Fig. 16, the insertion pad 17〇6 is made of a material having a plurality of cells 1708. The cells 1 708 are typically filled with air or other fluids and provide flexibility and flexibility to enhance the process. The nests may be open or closed in a size ranging from 0.1 micron to a few millimeters, such as between 1 micrometer and 1 millimeter. Other dimensions suitable for insertion of pad 1706 are also contemplated by the present invention. The insert pad 17A can be at least permeable or permeable to allow electrolyte to flow therethrough. The insertion pad 17 06 can be made of a dielectric material that is compatible with the electrolyte and electrochemical processes. Suitable materials include, but are not limited to, foamed polymers such as foamed polyurethanes and polyester films. The insertion pad 17〇6 generally has a compressibility of the upper support portion or the sub-pad 1604, and is more locally deformed when subjected to pressure. Figure 17 is a cross-sectional view of another embodiment of a conductive material 1800. The conductive material 1800 includes a conductive portion 18〇2 coupled to an object support portion 18〇4. Alternatively, the conductive material 1800 may include an insertion pad and a conductive backing (both not shown) disposed between the conductive portion is 〇2 and the object support portion 1804. The conductive material 1800 generally includes a plurality of through holes 18 〇 6 so that an electrolyte or other process fluid can pass between the polished surface 1 808 above the conductive portion 18 02 and the mounting surface under the object support portion 1 804 . The edge 1812 defined by the intersection of each of the apertures 1806 and the upper abrading surface 1808 is 1285576 - rim to eliminate any sharp corners, burrs or surfaces of the substrate. The contours of the edge 1812 may include spokes, grooves, cones, or other structures that may slid the edge 1812 and cause the trace to be minimized. In such embodiments where the conductive portion 1 802 is at least partially formed of a polymer, smoothing the edge 1812 can be accomplished by forming the aperture 1 806 prior to complete curing of the polymer. Thus, the edges 1812 will become rounded as the conductive portion 18〇2 contracts during the remaining polymer ring cure. In addition, or in the alternative, the edges 1812 can be rounded by applying at least one of heat or pressure during or after curing. In one example, the edges 1812 can be polished, heated, or flame treated to round the transition between the abrasive surface 1808 and the aperture 1806 at the edge 1812. In another example, a polymeric conductive portion 1802 can be made of a moldable material that is repelled by a mold or steel mold. The repulsive nature of the polymer conductive portion 18〇2 can form a surface tension such that the stamped stress applied to the polymer conductive portion 18〇2 can move the material away from the mold, thereby making the apertures 丨8 〇6 The edge 1 8 1 2 is rounded when cured. The apertures 1806 can be formed through the conductor 18 前 before or after assembly. In one embodiment, the aperture 18 〇 6 includes a first hole 1814 formed in the conductive portion 丨 8 〇 2 and a second hole 1 8 16 formed in the object support portion 1804. In such embodiments including an insert pad, the second aperture 1 8 16 is formed therein. Alternatively, at least a portion of the first hole 丨 8 丨 4 and the second hole 1 8 1 6 65 1285 576 may be formed in the conductive portion 1 802. The first hole 1814 has a diameter larger than the second hole 1816. The smaller diameter of the second hole 1 8 16 under the first hole 1814 can provide lateral support of the conductive portion 1 802 around the first hole i 8 i 4 , thereby improving the pad shear and torque during grinding. Resistance. Therefore, the aperture 丨8 〇6 including the larger hole at the surface 1 808 (which is concentric with the smaller hole below) causes the conductive portion ι 8 02 to have less deformation while minimizing the particle Forming, therefore, also minimizes substrate defects caused by pad damage. The pore sizes in the conductors can be formed by mechanical drilling (e.g., male/femal punching before or after all layers are combined). In one embodiment, the stamper of the conductive portion 1 802 on the conductive backing is first mounted on the interposer, and the conductive portion 18〇2 and the interposer having the conductive backing are mechanically perforated together. Or the secondary pads are mechanically perforated and calibrated together after perforation. In another embodiment, all layers are placed together for perforation. The invention also encompasses any other perforation technique and sequence. Thus various embodiments of electrical conductors suitable for electrochemical polishing of substrates are presented above. The conductive material provides good compliance to the surface of the substrate to promote uniform electrical contact to enhance the abrasive surface. In addition, the conductive material is configured to minimize scratches during the process, effectively reducing defect generation and reducing process cost. While the foregoing is a description of various embodiments of the present invention, the invention may be construed as the scope of the invention and the scope of the invention. 66 1285576 [Simultaneous Description of the Drawings] The foregoing description of the present invention can be readily appreciated by way of illustration, the description of which The way to get a more detailed description.
然而,應注意的是,附圖中所示者為本發明之典型的 實施例,因此不應被認為是本發明範圍的限制,因為本發 明可以有其它等效的實施例。 第1圖為本發明之處理設備的一實施例的平面圖; 第2圖為為一 ECMP站的實施例剖面圖; 第3圖為該研磨物的實施例的部分剖面圖; 第4圖為該具溝槽之研磨物的實施例的上平面圖; 第 5圖為該具溝槽之研磨物的另一實施例的上平面 圖; 第 6圖為該具溝槽之研磨物的又一實施例的上平面 圖;It is to be understood, however, that the invention is not limited by the scope of the invention 1 is a plan view showing an embodiment of a processing apparatus of the present invention; FIG. 2 is a cross-sectional view showing an embodiment of an ECMP station; FIG. 3 is a partial cross-sectional view showing an embodiment of the abrasive; A top plan view of an embodiment of a grooved abrasive; FIG. 5 is a top plan view of another embodiment of the grooved abrasive; FIG. 6 is a further embodiment of the grooved abrasive Upper plan
第 7A圖為此處所述之一導電織物或織品之上平面 圖; 第7B及7C圖為具有一研磨表面之研磨物的部分剖 面圖,其中該研磨表面至少包括一導電織物或織品; 第7D圖為一包括一金屬箔之一研磨物之一實施例的 部分剖面圖; 第7E圖為一至少包括一織品材料之研磨物之另一實 施例; 67 1285576 第7F圖為一具有一窗口形成其中之研磨物之另一實 施例; 第8A及8B圖係分別為一具有一導電元件之研磨物 的一實施例之上及剖面概要圖; 第8C及8D圖係分別為一具有一導電元件之研磨物 之一實施例的上及剖面概^要圖;Figure 7A is a plan view of one of the conductive fabrics or fabrics described herein; Figures 7B and 7C are partial cross-sectional views of the abrasive having an abrasive surface, wherein the abrasive surface comprises at least one electrically conductive fabric or fabric; Figure 1 is a partial cross-sectional view of an embodiment of an abrasive comprising a metal foil; Figure 7E is another embodiment of an abrasive comprising at least one fabric material; 67 1285576 Figure 7F shows a window having a window Another embodiment of the abrasive; the 8A and 8B drawings are respectively an embodiment of a polishing object having a conductive member and a schematic cross-sectional view; and the 8C and 8D drawings respectively have a conductive member. An upper and a cross-sectional view of one embodiment of the abrasive;
第9A及9B圖係一具有一導電元件之研磨物之其他 實施例的立體圖; 第10A圖為一研磨物之另一實施例之部分立體圖; 第1 0B圖為一研磨物之另一實施例之部分立體圖; 第10C圖為一研磨物之另一實施例之部分立體圖; 第1 0D圖為一研磨物之另一實施例之部分立體圖; 第10E圖為一研磨物之另一實施例之部分立體圖; 第11 A-11C圖為一基材接觸一此處所述之研磨物之 實施例之一實施例的概要側面圖;9A and 9B are perspective views of another embodiment of an abrasive having a conductive member; FIG. 10A is a partial perspective view of another embodiment of an abrasive; FIG. 10B is another embodiment of an abrasive. FIG. 10C is a partial perspective view of another embodiment of an abrasive; FIG. 10D is a partial perspective view of another embodiment of an abrasive; FIG. 10E is another embodiment of an abrasive. Portion 11 A-11C is a schematic side view of an embodiment of a substrate in contact with an embodiment of the abrasive described herein;
第12A-1 2D圖為一研磨物之實施例之上方及側面概 要圖,其中該研磨物具有數個連接至一電源的延伸部; 第1 3A-B圖為一導電物之另一實施例的上方及剖面 圖; 第14A-B圖為一導電物之另一實施例的上方及剖面 圖; 第1 5 -1 7圖為一導電物之替代實施例的剖面圖; 第18圖為一電極之一實施例的平面圖。 為了便於瞭解,相同的標號被使用在各圖式中用來標 68 1285576 示相·同 的 元 件 〇 [主 要 元 件 符 號說明】 100 處 理 設 備 102 電 化 學 機 械研磨站 104 度 量 裝 置 106 研 磨 站 108 基 座 110 輸 送 站 112 轉 塔 114 基 材 116 裝 載 機 械 臂 118 基 材 储 存 匣 120 工 廠 介 面 122 清 潔 模 組 124 輸 送 緩 衝 站 126 輸 出 緩 衝 站 128 裝 載 杯 組 件 130 研 磨 頭 132 輸 送 機 械 臂 134 孔 138 臂 140 控 制 器 142 CPU 144 記 憶 體 146 支 援 電 路 150 電 源 供 應 器 202 承 盤 204 電 極 205 研 磨 物 206 圓 盤 210 底 部 212 軸 214 排 水 道 216 孔 218 密 封 件 220 電 解 液 222 通 道 224 馬 達 232 容 積 233 容 器 234 孔 240 過 遽 器 242 幫 浦 244 供 應 管12A-1 2D is an upper and side schematic view of an embodiment of an abrasive having a plurality of extensions connected to a power source; and FIGS. 13A-B are another embodiment of an electrical conductor. Figure 14A-B is an upper and cross-sectional view of another embodiment of a conductive material; Figures 15 - 17 are cross-sectional views of an alternative embodiment of a conductive material; Figure 18 is a cross-sectional view of an alternative embodiment of a conductive material; A plan view of one embodiment of an electrode. For ease of understanding, the same reference numerals are used in the various figures for the reference 68 1285576. The same components are shown. [Main component symbol description] 100 Processing device 102 Electrochemical mechanical polishing station 104 Metric device 106 Grinding station 108 Base 110 Transfer station 112 Turret 114 Substrate 116 Loading arm 118 Substrate storage 匣 120 Factory interface 122 Cleaning module 124 Transport buffer station 126 Output buffer station 128 Loading cup assembly 130 Grinding head 132 Transfer robot 134 Hole 138 Arm 140 Control 142 CPU 144 Memory 146 Support Circuit 150 Power Supply 202 Reel 204 Electrode 205 Abrasive 206 Disc 210 Bottom 212 Shaft 214 Drainage Channel 216 Hole 218 Seal 220 Electrolyte 222 Channel 224 Motor 232 Volume 233 Container 234 Hole 240 Transmitter 242 pump 244 supply tube
69 1285576 252 中 央 部 分 254 裙部 258 凹 陷 270 喷嘴 272 流 體 輸 送系統 3 10 研磨表 面 320 底 墊 部 分 350 穿孔 360 研 磨 粒 子 370 上方研 磨表面 440 圓 形 墊 442 溝槽 446 穿 孔 448 研磨表 面 540 研 磨 墊 542 溝槽 544 研 磨 墊 546 穿孔 548 研 磨 物 550 内徑 640 研 磨 物 642 溝槽 644 研 m 墊 645 溝槽 646 穿 孔 648 研磨物 650 外 徑 700 織品 710 交 織 織 品 720 垂直方 向 730 水 平 方 向 740 通道 750 穿 孔 780 金屬箔 790 導 電 結 合劑 792 下方層 794 上 方 層 796 研磨表 面 798 織 物 800 研磨物 810 本 體 815 副墊 820 研 磨 表 面 830 凹坑 840 導 電 元 件 845 導電組 件 850 接 觸 表 面 860 穿孔69 1285576 252 Central portion 254 Skirt 258 Recess 270 Nozzle 272 Fluid delivery system 3 10 Abrasive surface 320 Bottom pad portion 350 Perforation 360 Abrasive particles 370 Upper abrading surface 440 Circular pad 442 Groove 446 Perforation 448 Abrasive surface 540 Abrasive pad 542 Groove Slot 544 Abrasive pad 546 Perforation 548 Abrasive 550 Inner diameter 640 Abrasive 642 Groove 644 Grinding m Pad 645 Groove 646 Perforation 648 Abrasive 650 Outer diameter 700 Fabric 710 Interwoven fabric 720 Vertical orientation 730 Horizontal orientation 740 Channel 750 Perforated 780 Metal Foil 790 Conductive Bond 792 Lower Layer 794 Upper Layer 796 Abrasive Surface 798 Fabric 800 Abrasive 810 Body 815 Sub Pad 820 Abrasive Surface 830 Pit 840 Conductive Element 845 Conductive Assembly 850 Contact Surface 860 Perforation
70 1285576 870交叉圖案 900研磨材料 904導電元件 9 0 8凹坑 9 1 0安裝部 9 1 3導電副元件 940導電表面 1004導電元件 1006迴圈 1 008第一端 1010第二端 1 0 1 4繫線基座 1024研磨表面 1030連接器 1 05 5通道 I 070溝槽 1100研磨物 II 2 0副墊 1140凹槽 1145電接觸窗 1155繫基座 1170凹槽 1 2 1 5擴充部 1 225連接器 875間距物 902本體 906研磨表面 909基座 9 1 2空隙部 920 _導電元件 1000研磨物 1005線圈 1007導電組件 1009第二端 1 0 1 2凹坑 I 0 1 8偏壓件 1026本體 1050通道 1060插入件 1075端部 1110研磨表面 II 3 0墊支撐部 1142導電元件 1150迴圈 1160基材 1210 導電研磨部 1220 研磨支撐部 1230 導電固定物70 1285576 870 cross pattern 900 abrasive material 904 conductive element 9 0 8 pit 9 1 0 mounting portion 9 1 3 conductive sub-element 940 conductive surface 1004 conductive element 1006 loop 1 008 first end 1010 second end 1 0 1 4 Wire Base 1024 Abrasive Surface 1030 Connector 1 05 5 Channel I 070 Groove 1100 Abrasive II 2 0 Sub Pad 1140 Groove 1145 Electrical Contact Window 1155 Series Base 1170 Groove 1 2 1 5 Expansion 1 225 Connector 875 Pitch 902 body 906 grinding surface 909 pedestal 9 1 2 void portion 920 _ conductive element 1000 abrasive 1005 coil 1007 conductive assembly 1009 second end 1 0 1 2 pit I 0 1 8 biasing member 1026 body 1050 channel 1060 insertion Piece 1075 End 1110 Abrasive Surface II 3 0 Pad Support 1142 Conductive Element 1150 Loop 1160 Substrate 1210 Conductive Polishing 1220 Grinding Support 1230 Conductive Fixture
71 1285576 1 2 3 2導電路徑 1 2 3 6間距物 1240固定物 1270研磨物 1 2 8 0研磨部 1 2 8 7導電路徑 1400導電物 1404導電部_ 1408插槽 1 500導電物 1504上方部 1 5 1 0彈性組件 1 5 2 2核心 1600導電物 1604物支撐部 1 608黏結層 1 700導電物 1 708巢室 1 804物支撐部 1 8 1 2邊緣 1 8 1 6第二孔洞 1904共中心區域 1 9 1 0電源 1234電聯接器 1238 螺栓 1260支撐部 1275導電元件 1285電聯接器 1290物支撐部 1402研磨表面 1406研磨元件 1 4 1 0彈性元件 1 502研磨表面 1 506滾動物 1 520導電載件 1 524軟性導電材料 1602導電部 1606插入墊 1 6 1 0導電背襯 1706插入墊 1 8 0 0導電物 1 806孔徑 1 8 1 4第一孔洞 1902共中心區域 1906共中心區域71 1285576 1 2 3 2 Conductive path 1 2 3 6 Pitch 1240 Fixture 1270 Abrasive 1 2 8 0 Grinding part 1 2 8 7 Conductive path 1400 Conductive 1404 Conductive part _ 1408 Slot 1 500 Conductor 1504 Upper part 1 5 1 0 elastic component 1 5 2 2 core 1600 conductive 1604 support 1 608 adhesive layer 1 700 conductive 1 708 cell 1 804 object support 1 8 1 2 edge 1 8 1 6 second hole 1904 common center area 1 9 1 0 power supply 1234 electrical connector 1238 bolt 1260 support 1275 conductive element 1285 electrical connector 1290 object support 1402 grinding surface 1406 grinding element 1 4 1 0 elastic element 1 502 grinding surface 1 506 rolling material 1 520 conductive carrier 1 524 soft conductive material 1602 conductive portion 1606 insertion pad 1 6 1 0 conductive backing 1706 insertion pad 1 8 0 0 conductive material 1 806 aperture 1 8 1 4 first hole 1902 common center area 1906 common center area
Claims (1)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/455,941 US6991528B2 (en) | 2000-02-17 | 2003-06-06 | Conductive polishing article for electrochemical mechanical polishing |
US10/455,895 US20040020789A1 (en) | 2000-02-17 | 2003-06-06 | Conductive polishing article for electrochemical mechanical polishing |
Publications (2)
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TW200520893A TW200520893A (en) | 2005-07-01 |
TWI285576B true TWI285576B (en) | 2007-08-21 |
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TW093116351A TWI285576B (en) | 2003-06-06 | 2004-06-07 | Conductive polishing article for electrochemical mechanical polishing |
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KR (2) | KR20070104686A (en) |
TW (1) | TWI285576B (en) |
WO (1) | WO2004108358A2 (en) |
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KR100721196B1 (en) * | 2005-05-24 | 2007-05-23 | 주식회사 하이닉스반도체 | Polishing pad and chemical mechanical polishing device using same |
US20070158201A1 (en) * | 2006-01-06 | 2007-07-12 | Applied Materials, Inc. | Electrochemical processing with dynamic process control |
KR102266961B1 (en) * | 2015-01-30 | 2021-06-18 | 어플라이드 머티어리얼스, 인코포레이티드 | Multilayer Nanofiber CMP Pads |
JP7227137B2 (en) * | 2017-01-20 | 2023-02-21 | アプライド マテリアルズ インコーポレイテッド | Thin plastic abrasive article for CMP applications |
JP7113626B2 (en) * | 2018-01-12 | 2022-08-05 | ニッタ・デュポン株式会社 | polishing pad |
US20220281060A1 (en) * | 2021-03-03 | 2022-09-08 | Applied Materials, Inc. | Pressure signals with different frequencies during friction monitoring to provide spatial resolution |
CN116065225B (en) * | 2023-03-31 | 2023-06-16 | 太原理工大学 | Electrolytic polishing device for inner wall of special-shaped micro-fine tube |
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US3448023A (en) * | 1966-01-20 | 1969-06-03 | Hammond Machinery Builders Inc | Belt type electro-chemical (or electrolytic) grinding machine |
US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
GB9721494D0 (en) * | 1997-10-09 | 1997-12-10 | Minnesota Mining & Mfg | Abrasive articles and their preparations |
US6979248B2 (en) * | 2002-05-07 | 2005-12-27 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US7066800B2 (en) * | 2000-02-17 | 2006-06-27 | Applied Materials Inc. | Conductive polishing article for electrochemical mechanical polishing |
ATE432145T1 (en) * | 2001-04-24 | 2009-06-15 | Applied Materials Inc | CONDUCTIVE POLISHING BODY FOR ELECTROCHEMICAL-MECHANICAL POLISHING |
-
2004
- 2004-06-07 TW TW093116351A patent/TWI285576B/en not_active IP Right Cessation
- 2004-06-07 KR KR1020077023159A patent/KR20070104686A/en not_active Application Discontinuation
- 2004-06-07 KR KR1020057023421A patent/KR20060055463A/en not_active Application Discontinuation
- 2004-06-07 JP JP2006515213A patent/JP2006527483A/en active Pending
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JP2006527483A (en) | 2006-11-30 |
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KR20060055463A (en) | 2006-05-23 |
WO2004108358A3 (en) | 2005-06-09 |
KR20070104686A (en) | 2007-10-26 |
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