TWI280544B - Display - Google Patents

Abstract

The present invention provides a display. The display comprises a substrate, a first group of electrodes arranged adjacently to the substrate and composed of electrode patterns extending in a first direction, a second group of electrodes arranged adjacently to the substrate and composed of electrode patterns extending in a second direction different from the first direction, and display elements each formed at the intersection of one electrode pattern of the first electrode group and one electrode pattern of the second electrode group. At least the first electrode group include electrode patterns one end of each of which is connected to a drive circuit and which have mutually different lengths from one ends to the others. Each of the electrode patterns has a laminated structure including a first conductor having a first sheet resistivity and a second conductor having a second sheet resistivity smaller than the first one. Each of the electrode patterns has a high-resistance region where the second conductor is removed. The length of the high-resistance regions are different depending on the length of the electrode patterns.

Description

1280544 IX. Description of the Invention: [Technical Field 3 of Invention] The present invention generally relates to a display device, and more particularly to a display device using a current-driven light-emitting element. 5 [Prior Art] A conventional display device is mainly constituted by a liquid crystal display device, and recently, a display device constituted by a plasma display device has been used. Further, it is also realized that the organic EL display device is constructed as a display device. ® In order to provide such a display device at a low cost, a passive matrix drive junction structure should be used. By using the passive matrix driving structure, the thin film transistor required for the dynamic matrix driving structure can be omitted. Fig. 1 is a schematic view showing the schematic configuration of a display device 10 of such a passive matrix driving structure. Referring to Fig. 1, the display device 10 includes a display substrate 11 on which a display area 11A 15 is formed, and a plurality of scanning lines 11a and data lines lib are formed extending in the X direction and the Y direction. Further, the substrate 11 is connected to a driving circuit 12a which can select one of the scanning lines 11a to be driven, and a driving circuit 12B which can be driven by one or more of the above-mentioned data lines lib. Here, by the driving circuit 12A, a scanning line 11a is selected, and one or more data lines lib are selected by the driving circuit 12B to correspond to the intersection of the selected scanning line 11a and the data line lib. One or more of the pixels emit light at the same time. The drive circuits 12A and 12B are generally connected between the 1280544 fty core of the integrated circuit chip and the display substrate 11 as described above, and are connected by a flexible substrate on which a wiring pattern is printed in order to reduce the size of the display device. This is the form of Chip 〇n nim (COF). In particular, when the driver circuit is mounted by the c〇F mounting technology, the 仃〇 5 〇 2 〇 3 · Sn02) pattern applied to the flexible substrate is often used. The inventors of the present invention have found that when driving a current-driven display device such as an organic EL element or a plasma display device, the length of the wiring pattern for connecting the driving circuit to the scanning line or the data line is When each one is different, there is a problem of uneven driving. 0 ^ The second and third views show the structure for connecting the driving portion 12A of the display device 1A of Fig. i and the connecting portion 11C of the scanning line 11a. Referring to FIGS. 2 and 3, the connecting portion 11C is formed of A1 and is configured by a meandering wiring pattern llc connected to the scanning line 11a, but the distance between the front and the soul ITO wiring patterns lie is in the same manner as the driving circuit 12 described above. The eight-connected < side has a smaller pitch corresponding to the driving circuit 12A than the display area 11A. Further, in the second drawing, the ITO wiring pattern lie is linearly extended in the connection portion, and as a result, the pattern interval of the IT〇 wiring pattern lie is different from the side connected to the driving circuit 12A and the side of the display region 11A. However, in the third figure, the aforementioned pattern interval is maintained. Even in the form of FIG. 2 or FIG. 3, it is unavoidable that the above-described tantalum wiring pattern lie is located at the above-mentioned connecting portion 11 (the length of the substrate is different from the peripheral portion of the substrate, and the peripheral portion of the substrate is different from the substrate. The center portion is also an elder. For this reason, the impedance of the ITO wiring pattern lie at the center portion of the substrate and the side of the substrate 1280544 is different in the connection portion llc, and thus there is a possibility that the center portion and the substrate periphery of the substrate are different. For example, when the sheet resistance of the IT 〇 wiring 5 pattern He constituting the scanning line lead-out portion 11a is 10 Ω/□, the wiring length is 5 mm. When the wiring width is 50/m, the wiring resistance of the ΓΓΟ wiring pattern 11c is ikQ, and it is understood that the voltage of the ITO wiring pattern He is reduced by 1 〇v. The voltage drop is as shown in FIG. 2 or FIG. 3, and the distance between the ITO wiring patterns llc is also changed in the connection of 10 nc. For this purpose, the scanning line 11a is formed on the central portion and the peripheral portion of the substrate. IT〇 wiring pattern He long The structure of the difference is unavoidable—the wiring resistance of the broom line 11a at the center of the substrate becomes the smallest, and the wiring pattern of the ΠΌ wiring pattern 11 (the wiring line 11 at the upper and lower ends of the squirrel line (1) becomes maximum. Here, for example, when the sheet resistance of the IT0 wiring pattern llc is used as the structure of the wiring width 1 〇 _, it can be seen that if the length difference of the ιτ〇 wiring pattern lie is 10 mm, the broom line iia at the center portion of the substrate And the driving voltage between the broom line 11a of the peripheral portion of the substrate is highly different. That is, according to the findings of the inventors of the present invention, it is clear that in the device of such a structure, the driving voltage applied to Xiao is not bright. The pixel is generated in the peripheral portion of the candidate substrate 11.

It is a well-known limitation that the technique of laminating a low-resistance material of the ITO pattern on the ITO pattern to reduce the resistance value of the ITO pattern is a well-known limitation. According to this method, 20 1280544 cannot be as shown in FIG. 2 and FIG. The connection portion nc displays a change in resistance caused by a difference in length of the wiring pattern on the substrate, and is compensated for the mean wiring pattern on the display substrate. The resistance caused by the length of each of the 1 Τ 0 wiring patterns can be compensated for. 5. The method of arranging can also be considered by using a length such as a corresponding ΙΤΟ wiring pattern to change the pattern width. For example, assuming that among the 100 scanning lines 11a, in the connecting portion 11C of the central scanning line 11a, the wiring length of the IT〇 wiring pattern lic is 5 mm, the pattern width is 20 m, and the wiring length at the upper or lower end of the substrate is When it is l〇mm, the scanning line lla of the upper or lower end of the scanning line 11a of the center is increased to 40/zm by the width of the ΓΓΟ4/m scale by the scanning line lla of the upper or lower end of the 10th. The change in resistance value caused by the difference in wiring length in the aforementioned connection portion nc is compensated. However, the pattern width accuracy of the actual ITO pattern is also iivm, and the error of the resistance value is ±5% when the pattern width is 20//m, and becomes ±2.5% at 15 4〇, which is to be practically performed. Engineering has its own difficulties. Moreover, the method for adjusting the width of such a pattern requires a large number of designs. [Patent Document 1] US Patent Publication No. 2001-050799 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2002-162647 No. 2002-221536 [Patent Document 4] According to one aspect of the present invention, a display device including: a substrate; a first electrode group adjacent to the substrate and having 1280544 columns a second electrode group is formed by a plurality of electrode patterns extending in the first direction; the second electrode group is adjacent to the substrate, and is formed by a plurality of electrode patterns extending in a second direction different from the first direction; And a plurality of display elements are formed separately corresponding to an intersection of one of the first electrode group and one of the first electrode groups of the first and second electrode groups; at least the first electrode group has a plurality of electrode patterns. a plurality of electrode patterns are connected to the driving circuit at each end, and the lengths of the one ends to the other end are different from each other; each of the plurality of electrode patterns has a laminated structure The build-up structure is constructed by a first conductor having a first sheet resistance and a second conductor having a second sheet resistance smaller than the first sheet resistance; the plurality of electrode patterns Each of the high-resistance regions in which the second conductor is removed is provided; and the length of the high-resistance region is such that each of the plurality of electrode patterns differs depending on the length of the electrode pattern. According to the present invention, the length of the section is different for each of the electrode patterns for constituting the first electrode group, and as a result, for example, on the entire length of the electrode pattern for constituting the first electrode group. When the resistance value changes according to each electrode pattern, the length of the second electric conductor can be changed according to the length of the interval, so that the change of the resistance value can be compensated, and the display device is more uniform in the display device. . Other objects and features of the present invention will become apparent from the following detailed description of the invention. [Simple description of the drawing] Fig. 1 shows a schematic diagram of a conventional passive matrix driving type display device 1280544. Fig. 2 is a schematic view showing the subject to be solved by the present invention. Figure 3 is a schematic diagram showing the subject matter to be solved by the present invention. Fig. 4 is a schematic block diagram showing a passive matrix drive type five-electrode EL display device according to a first embodiment of the present invention. Fig. 5 is a partial cross-sectional view showing the organic EL display device of Fig. 4. Fig. 6 is a detailed structural view showing a connection portion of the organic EL display device of Fig. 4. 10 Fig. 7A is a cross-sectional structural view showing the connection portion of the organic EL display device of Fig. 4. Fig. 7B is a cross-sectional structural view showing the connection portion of the organic EL display device of Fig. 4. Fig. 8 is a schematic block diagram showing a passive matrix drive type 15-electrode EL display device according to a second embodiment of the present invention. Fig. 9 is a detailed structural view showing a connection portion of the organic EL display device of Fig. 8. Fig. 10A is a cross-sectional structural view showing a connection portion of the organic EL display device of Fig. 8. 20 Fig. 10B is a cross-sectional structural view showing a connection portion of the organic EL display device of Fig. 8. Fig. 11 is a view showing the characteristics of the organic EL display device of the present invention. Fig. 12 is a schematic view showing a modification of one of the organic display devices of Fig. 6. 10 1280544 Fig. 13 is a partial view of a third EL display device of the present invention. Figure 14 is a partial view of a fourth EL display device of the present invention. 5 Fig. 15 is a partial view of a fourth EL display device of the present invention. Figure 16 is a partial view of a fifth EL display device of the present invention. [Explanation of component symbols] 10 10, 20, 40...Organic EL display device 11, 21...substrate 11A, 21A···Display area 11C, 21C, 41C···Connecting unit 1 la, 21a··· Mesh seedlings, wires 15 llb, 21b·.* data lines 11c...wiring patterns 12A, 12B, 22A, 22B·. drive circuit 20A... hole transport layer embodiment passive matrix drive type organic embodiment Passive Matrix Drive Type Organic Embodiment Passive Matrix Drive Type Organic Embodiment Passive Matrix Drive Type Organic 20B Light Emitting Layer 20 20C... Electron Transport Layer 20D... Cathode 20E... Organic EL Element 21T, 41T Terminal portion pattern 25 21a2, 41a2. . . Cr pattern 21c: wiring pattern I: Embodiment 3 [First embodiment] 30 Fig. 4 shows a passive matrix driving type organic body according to the first embodiment of the present invention. A structural diagram of the EL display device 20. Referring to Fig. 4, the display device 20 as a whole has the same structure as the display 11180544 of the first drawing: the display unit 1G, and the display base including the display area 21A is formed on the substrate 21 in the X direction and the Y direction. There are a large number of sweeping lines and a data line 21b extending. Further, the substrate 21 is connected to a drive circuit 22B which is capable of selectively driving the driving force 22A of the n-th sweeping line and the selection driving strip or the plurality of the feeding lines 21b. # 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The intersection or the majority of the pixels emit light at the same time. Fig. 5 is a cross-sectional view showing the data line 21b along the display device 20 of Fig. 4. As shown in Fig. 5, the data line 21b is parallel-patterned on the glass substrate 21 to constitute an anode. The organic EL element 20E on which the hole-transporting 15-feed layer 20A, the light-emitting layer 20B, and the electron transporting layer 2〇c are laminated on each of the data lines 21b is basically formed by a steaming method using a photomask, and is thus formed. The organic EL elements 20E are arranged in a matrix on the glass substrate 21. The space between the organic EL elements 20E arranged in a matrix is filled with an insulating film 20 (not shown), and further, in the organic EL element 20E, a group of organic EL elements can be connected in the X direction. The cathode 20D is composed of A1 or the like. The cathode 20D is constructed as a cat line 21a in the structure of Fig. 4. Fig. 6 is a view showing the connection of the scanning line fine structure corresponding to the connecting portion 11C of Figs. 1 and 2, 12 128 〇 544. 21A and the connection portion 21C of the driving circuit 22A. Referring to FIG. 6, in the connecting portion 21C, the overlapping intervals of the scanning lines 21a extending to the display area 5 are matched to form the driving power. The terminal interval of the integrated circuit chip is reduced. For this reason, the wiring pattern 21c extending from the end portion of the scanning line 21a extending to the display region 21A is bent in the connecting portion 21C. The wiring pattern 21 is formed by a laminate of a 1 〇 pattern 21ai and a low-resistance Cr pattern formed on the first 〇 pattern 21a. The connection portion is more specifically described. The 21C system includes an interval ft 1 , that is, the closed A system is formed by extending the end portion of the sweeping cat line 2la to form a wiring pattern 21c extending obliquely with respect to the extending direction (square 3) in the display region 21A; The interval Β means that the wiring pattern 〜 Μ 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏'Corresponding to different scan lines 21a wiring pattern 21 c mutually flat

Stretched out. In the sixth diagram, the interval A is defined as the length of the pattern in which the majority of the wirings are located at the center of the wiring having the shortest wiring length - the length of the pattern having the longest outer wiring length is the largest (U_) Then, the 逑 interval B is defined as a length _) in the pattern in which the wiring length of the center portion is the shortest among the plurality of ribs 21c, and is located at the outermost wiring pattern having the longest wiring length. As a result of the related structure of the tiling 13 1280544, the wiring length in the Λ 疋 疋 Α 系 系 系 系 系 系 ΙΤΟ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Further, the wiring length of the interval B is increased by a straight line 5 from the wiring pattern 21c located at the outermost side to the wiring pattern 21c located at the center. In the present embodiment, the section B is further divided into the i-th section B1 and the second section B2, and as shown in FIGS. 7A and 7B, the low-resistance Cr film 21 is selectively removed in the second section B2: 3⁄4 //. ^ φ 1 pancreas 21k, trimming the length of the Cr pattern of 21a and ☆ ^ ui wood ZU2 in the wiring pattern 21c of the interval ,, so that the resistance value of the wiring pattern 21c 10 is set to a fixed value. However, the 7th and the #1 rent one, the music/A map shows the section of the wiring pattern 21c in the aforementioned section Bi, the 7th item, the 丨 s 丄 丄 / · · · · 区间 区间 区间 区间 区间A cross section of the wiring pattern 21c in B2. As described above, according to the present invention, the low resistance & film 2la2 is selectively removed in the above-mentioned region (5) B2, and an equivalent resistance element is inserted in the interval B2. At this time, in the present embodiment, the resistance value of the resistance element, such as the first, 1%, and 7F' is not the width Wa of the adjustment pattern 21a, but the length of the interval B2 is adjusted, and can be set. Make it with good precision. Hereinafter, the procedure for such trimming will be specifically described. Referring again to Fig. 6, as described earlier, the length La (mm) of the section A is zero at the central portion of the electrode group for constituting the scanning line 20 2ia. Here, when the length u of the wiring pattern located at the outermost side of the wiring group is Lamax (mm), the length La (Lak) of the trim pattern changes linearly between the center portion and the outermost portion of the wiring group. The wiring length Lak of 苐k can be obtained by [1J and [2]. 14 1280544 [Number 1] and

2La —^ +La η coffee 5

On the other hand, the length Lb (mm) of the section B also changes linearly, and is the largest in the center of the wiring group, and becomes zero at the outermost end of the wiring group. When Lb in the center of the wiring group is Lbmax, the wiring length 第 of the kth strip can be obtained by [Number 3] and [Number 4]. [Number 3] and η H) [Number 4] The monument, the pill, and the f. In addition, in the structure of Fig. 6, the mechanical strength is generated in order to avoid the provision of a low-resistance auxiliary wiring such as a film in the terminal claw. When the reduction occurs, the part of the Cr film 21b in which the uranium is further described is the above-mentioned section Bi, and it is preferable that the above-described section A is continuously extended. 15 is also the description of the first uranium, and the interval B includes: a section B1' in which the ITO film 21a! and the Cr film 21a corresponding to the 7A drawing are laminated, and only the ITO film 21a corresponding to the 7B drawing; In the section B2, the extension length of each of the scanning lines 2ia is Lblk (mm) in the section B1, and Lb2k (mm) in the section B2. The sheet resistance of the ITO film 21ai is Rit0 (i2). /〇), Cj^2ia2 15 20 1280544 The sheet resistance is υΩ/Ε]), the line width of the interval a is Wa (mm), and the line width of the interval B is Wb (mm) 'the aforementioned interval a and interval The wiring resistances Rak and Rbk of B can be obtained by [5].

Rito · Rr La __aux ^ [Number 5]

Rbk =

Rito + R aux ¥Yw

Rito R

Team +zi?2J

5 Here, the wiring resistance Rk of the connection portion 21C corresponding to the kth scanning line 21a is obtained as ^= Rak + Rbk. Then, based on the above, the uniformity (trimming) of the wiring resistance using the Cr film 21a2 as the auxiliary wiring pattern was examined. The uniformity of the resistance of such a wiring is attributed to the problem of how to use Lblk and Lb2k which are always fixed regardless of the value of Rk regardless of the value of 10 k in the above formula. Here, in the simpler case, it is assumed that in the range of 0Sk$n/2, at k = n/2, that is, the pattern iLb2k located at the central portion of the wiring group, that is, . The relationship between ‘(7) and Lblk + Lb2k = Lbmax can be expressed as: [Number 6] "{nil)=

R

Wb 1 +

R

Rit〇^Raux Wa V Chi •Lan

Ku, Rito ^Lh 15 but here is the following export. When k=n/2, the following relationship holds; that is, [7] Rbk=^ is in this shilling [8]

Cl =

R

Rito + R IMk+Lb2k

Rito^ ^Wb C2 D ^aux Rito + Rau 16 1280544, then get a relation, ie

Rbk=CKC2.Lblk+Lb2k) [9]

Lb2k Lblk Lb2h

Cl -C2.Lblk=Lbmax-Lblk (RKm , C2 -1 ,^(2/n) Cl

Ci Lbmaz a C2.Lbh

Rh (n/2) C2

RK 12)

Cl C2-1

Cl -Lh Because the class has the same resistance on all patterns, it is necessary to make Rak of the third strip, that is, Ra(9) and Rbj^pRb(n/2) of the n/2, be phase 5 after trimming. That is, there is a relationship established: [number 10] sen (n/2) = Rb (9) = C1 Λ〇)

Lan

Wa, Rito, you can get a relationship:

Lb2h C2.Rito La„

Cl (C2· Rito Lan [number 11]

Cl

Wa

Wb f Raux -·-· lH—— Wa I Rito C2-1V •La

Cl R

Wa one

Rito • Lh

Rito + Ra, when k = 0, Lb2k at the outermost end of the wiring group, that is, 1^2(1) becomes 10, and Lb2k changes linearly from 0 to Lb2(n/2). Therefore, the wiring length Lb2k of the kth strip after trimming can be obtained by [number 12] and [number 13] 0 [number 12] Lb2k: _ 2Lb2(n/2) ^ , η [number 13] Lb2k : 2Lb2 (tin, ---^-k^2Lb2(n/2))<k< η 2 rk-\ 15 Thus, in the present embodiment, the connecting portion 21C is formed by the scanning line 21a extending 17 1280544. In the wiring group, the wiring length of the wiring pattern is obtained at the center portion, and the resistor value can be easily trimmed. When the resistance value is trimmed, the mask of the wiring pattern in the section B2 can be formed in accordance with the wiring pattern data obtained by the above formula, and no special number of operations is required. For example, 'the above parameters are Lamax=l〇mm, Lbmax=5mm, Wa=2〇//m, Wb=20//m, Rito=l〇D/[I], Raux = 2D/E], n = 1 According to the above formula, the wiring lengths Lb1(n/2) and Lb2(n/2) in the central portion (n/2th) of the section B become Lbl(n/2) = 4mm, Lb2(n/2) 10 - lmm 'again, the combined sheet resistance of Rit0 and Raux becomes 1.67 Ω/□, and the wiring resistance of the above interval β becomes: Rbl(n/2) = 1.67x4000/20=334 Ω, Rb2(n/2)= ιοχι 000/20 = 500 Ω. Next, in the present embodiment, the difference in resistance when a pattern error of ±1/1/in is generated is evaluated. 15 For the above values of iLbl(n/2) and Lb2(n/2), in the interval B1, the pattern of the Cr film 21a2 is only 1 #m short, LM(n/2) = 3 999mm, Lb2 (n/2)=l.〇〇imm, Rbl(n/2)=1 67χ3999/2〇= 333 92Ω,

Rb2(n/2)= i〇xiGOi/2〇= 50〇·5Ω, and the change in resistance value becomes 0.05%. Similarly, in the above-described section 61, the 20 auxiliary wirings composed of the above & film 21 are patterned to have a length of l//m, and Lbl(n/2) = 4001 mm, Lb2(n/2) = When 〇.999mm, the change in resistance value becomes + 〇〇5%. Thus, according to the present invention, the adjustment of the wiring width is compared with the resistance adjustment to achieve an improvement of the accuracy of two digits. [Second Embodiment] 18 1280544 Fig. 8 is a schematic view showing the organic display device 4 according to the second embodiment of the present invention, and Fig. 9 is a cross-sectional view showing the scanning electrode of the display device 40. In the drawings, the same reference numerals are given to the same parts in the drawings, and the description is omitted. 5 Referring to FIG. 8, the display device 40 is also a passive matrix drive type display device similar to the display device 20 of FIG. 4, and is connected to the drive circuit 22A and the scan line 21a, as shown in FIG. The connecting portion 4ic replaces the connecting portion 21C of Fig. 6. Referring to Fig. 9, the connecting portion 41C has a structure similar to that of the connecting portion 21C of Fig. 6 in plan view. However, instead of the wiring pattern 21c formed by the extending portion of the scanning line 21c, the wiring pattern 21c is connected to the scan. The end portion of the line 21a is converge to converge on the wiring pattern 41c of the terminal portion 41T formed by the terminal of the drive circuit 22A. Similarly to the wiring pattern 21c, the wiring pattern 41c is divided into the section A and the section B along the direction in which the 15 is extended, and the section length of the section A! ^^ is the largest among the wiring patterns 41c corresponding to the outermost scanning line 41a, and becomes zero in the wiring pattern 41c corresponding to the scanning line 41a of the central portion. Further, the section B is divided into the section B1 and the section B2, and in the section B1 2〇, as shown in the first diagram, the wiring pattern 41c has the same ITO film 41a and the silver alloy film 41a as the scanning line 41a. In the above-described section B2, as shown in FIG. 10B, the wiring pattern 41c is constructed only by the ITO film 41a. Further, the ITO pattern 41a! in which the section B2 is formed is extended, and the electrode including the driver circuit 22A and the 19128〇544 terminal portion 41T which is rolled are formed. Also in this embodiment, as in the prior embodiment, the length w of the section B1 of the front line pattern 41c is trimmed to remove the aforementioned connection.卩41C knows that the resistance of the line 04a is mutually generated. ^W The silver alloy is made of an alloy such as silver and copper or copper, whereby a sheet resistance lower than Q* can be achieved. On the other hand, since the silver-to-silver ratio & is also prone to deterioration in characteristics due to electromigration or oxidation, the aforementioned banknotes are attached to the glass substrate 21 as shown in the above section. And the ITO 臈41ai protection state is formed in the lower layer of the ITO film 41ai. Hereinafter, the trimming of the connecting portion 11C of Fig. 11 will be described in detail. As described above, in the wiring pattern 41c corresponding to the brushing of the center portion, the wiring length La in the section A becomes zero, and the wiring length La is on the outer scanning line 41a and the distance is as described above. The central part of the 15 interval is proportional to the 'main line increaser. Here, when the length of the wiring pattern 4lc located at the outermost end is Lamax (mm), the wiring length Lak of the section A from the center (k=〇) to the wiring pattern 4ic of the kth line can be expressed by the following expression .

[Number 14] Lak = ~armx k^-La , n job f 0&lt;/:&lt; V 20 and [number 15] --k - La^ , η job, i, one of the decay r η a <k On the other hand, the length of the aforementioned wiring pattern 4ic of the aforementioned section B is 20 1280544

Similarly, Lb (mm) linearly changes from the central portion of the substrate to the outer side, and the wiring pattern 41c corresponding to the center of the scanning line 41a is the largest, and becomes zero at the outermost end. Here, when the section length Lb located in the center portion is Lbmax, the k-th wiring length Lbk from the center portion can be expressed by the following expression. [16] Lbk = _ 2L &amp; max / , 0 &lt; k &lt; - V / V η and [Number 17] Lbk- : -2Lb; k + 2Lb · , [quantity &lt;"

Here, the sheet resistance of the ITO film 41ai is Rito (D/Cl), the sheet resistance of the silver alloy film 41a2 is Raux (Q/E), and the width of the ITO film 41ai in the section A is wiring. The width of the pattern 41c is Wa, and the width of the silver alloy film 41a2 in the section A is Wa', and the width of the ITO film 41ai in the section B, that is, the width of the wiring pattern 41c is Wb, and the silver alloy in the section B When the width of the film 41 &amp; 2 is Wb', the wiring resistances Rak and Rbk of the section A and the section B are each:

Rah 15 [Number 18]

Rito.Raia Rit〇~^Rail

Wa

Lak ~Wa

Rbh

Rito ~Wb{

R -Lblk+Lb2k)

Wb, the resistance Rk of the kth wiring pattern 41c in the connection portion 41T may be: Rk = Ra^ + Rbk. Here, 'Lblk and Lb2k refer to the wiring lengths in the sections B1 and B2 of the wiring pattern 41c. Next, trimming 21 1280544 of the aforementioned wiring lengths Lblk and Lb2k will be described. As in the form of the previous embodiment, the purpose of the trimming is to set the aforementioned resistance Rk to the same value on all the patterns. Hereinafter, for the sake of simple explanation, it is processed in the form of 〇SkSn/2. When k = n/2, that is, considering the wiring pattern 41c at the center portion, the length Lb2k, that is, Lb2(n/2) is expressed by the relationship Lblk + Lb2k = Lbmax. [Number 19]

Lbl (n/2) D 1+_ship

Wb

Rito Wb' ^ Lan

R

Wb

When Rito Wb' ^Lh k = n/2, in the above relationship 10 [number 20] 飑 = 3⁄4, let [number 21] Cl:

Wb + Rau

Rito ~Wb C2

R

Rit〇--+Raa

When Wb, the following performance is obtained: Rbk=Cl(C2 · Lblk + Lb2k)

Lb2k [number 22] Lb2k Here, let [number 23] C3 =

Rh ci -C2*LM, =L^ -Lbh C2-1 .Rb,n/2) Cl

Cl -C2^Lb\h j Rbt (n/2) C2 (Rb^-Lb,

Cl C2-1V Cl

R

Rit〇-- ^RaiL

For Wa, the resistance Rak can be expressed as: 22 15 1280544 ί number 24] Rak=C3*Rit. ·^

Wa, under the condition that the resistances of all the wiring patterns 41c are equalized after trimming, the R&amp;k, that is, the Ra(9) of the third strip is equal to the Rbk of the n/2th strip, that is, Rb(n/2). That is, there is a formula [25]: ((〇)

Lan

Wa · Rito, but derived from this: [Number 26]

Lb2h C3· Rito _Lan C2

Cl

R

Wa C2-\^ Cl Wb (Λ Raux Wa Wa { Rito Wb,

C3.S

Wa, La„

R

Lb

Rito Wb,

Wa, can get the above relationship. On the other hand, when k=0, that is, when the outermost wiring pattern 41c is considered, the length Lb2k (= Lb2(0)) becomes zero, and Lb2k* is zero-to-Lb2 (n(7) changes linearly. Therefore, trimming The length of the wiring of the kth strip can be obtained, ie: [27] Lb2k = 2Lb2{n/2) k , η V 2; and [28] Lb2k = k + 2Lb2{nll) , [音〈 Moxibustion here makes the number of the above formulas Lamax = 10mm, Lbmax = 5mm, Wa = 20 // m, Wb = 20 // m, Wa, = 15 from m, Wb, = 23 1280544 15/ /m, Rit〇=l〇n/[D, R_ = 〇.2n/[I], n=100' The aforementioned wiring lengths are each Lbl(n/2) = 4.867(mm), Lb2 (n/2) = 0.133 (mm) 0 Further, the combined sheet resistance of Rito and Raux becomes 0·196 Ω/[], so that the wiring resistance of the wiring pattern 41c in the above-described interval 可 can be obtained, each of which is:

Rbl(n/2) = 0-260x4897/20 = 63.21 Ω ^

Rb2(n/2)= 10x133/20 = 66,5Ω. Next, the influence on the pattern error of the trimming of this embodiment was evaluated. 10 Considering that the pattern error of 1 // m is generated in the above-mentioned optimum wiring lengths Lb 1 (n/2) and Lb 1 (n/2), it becomes Lbl(n/2)=3.999 (mm), Lbl( n/2)= l.OOl(mm), but at this point it becomes:

Rbl(n/2) = 0.260x4866/20 = 63.26Ω,

Rb2(n/2) = 10x134/20 = 67 Ω, 15 is expected to have a 〇·5% change in resistance. Similarly, when a pattern error of + 1 // m is generated in the above-mentioned optimum wiring lengths Lb1(n/2) and Lb1(n/2), it becomes Lb i _)=4 ·〇〇i (mm), Lb i _) —0.999 (mm), but at this time it is expected that a resistance change of +〇5% will occur. Thus, the trimming performed in accordance with the present embodiment can ensure a trimming accuracy of 1 or more times as compared with the case of adjusting the width of the pattern and then trimming. Figure 11 is a comparison with the comparison! And 2, showing the implementation of the foregoing embodiment i, the 仏 日 日 扫 扫 扫 扫 扫 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 After the maximum and minimum voltage drop of 1280544 and Γ△ widespread, J is not set to Cr film or silver alloy, etc. Example 5 is better than the case where the buckle film is used as the auxiliary wiring and the second resistance is still wrong. The width of the wiring pattern 21c is adjusted. In this regard, j is corresponding to the first embodiment described above, and the trimming is the adjustment of the wiring length of the auxiliary wiring, that is, the Cr pattern 21a2 in the section B1 of the sixth drawing, into the tL, and the experimental example 2 corresponds to the previous In the second embodiment, the trimming is performed by adjusting the wiring length of the Ag alloy pattern _2 10 in the auxiliary wiring B1 of the U®. Referring to Figure 11, in the comparative example, the variation of the resistance value is as much as 〇 Ω or 125.1 Ω, which should be changed. The difference Δ 电 of the electric dust drop is also 7 5 V when the driving current of 10 mA flows. ΐ 25ν. On the other hand, in the present invention, the variation Ar of the resistance value of the wiring pattern 21c or 41c which is caused by the difference in the wiring length of the connection portion 21C or the batch is reduced to 83.4 Ω in the experimental example i, and in Experimental Example 2 When it is reduced to l5 iQ, it can be seen that the voltage drop difference is also reduced to 〇.83 ν ' can be reduced to 0.15 V in Experimental Example 2. Further, in the above description, it is considered that the wiring length Lblk and the wiring length Lb2k in the interval B1 and the interval Β2 are linearly changed along with the number k. However, as in the present invention, when the wiring length is trimmed, the nth image is also It can be understood that even if there is a pattern error, there is not much influence on the resistance value variation. As shown in Fig. 12, the wiring length LMk of the interval bi and the wiring length &amp; Lb2k of the interval may be stepped or arc-shaped. The shape of 25 1280544 changes. However, in the twelfth figure, the same reference numerals are attached to the portions described above, and the description is omitted. ^ Further, in the connection portion uc of Fig. 6 or Fig. n, it is also possible to connect the data electrode training and the driving circuit 2 to the connection portion. [Third Embodiment] Fig. 13 is a view showing a partial configuration of a passive matrix drive type organic EL display device according to a third embodiment of the present invention. However, in the drawings, the same reference numerals are attached to the portions already described, and the description is omitted. 13 is a cross-sectional view of the section 扪10 as in the previous description of FIG. 7A, but the passive matrix driving type organic EL display device of the present embodiment refers to the organic display device previously described in FIG. The modification of the second embodiment has a configuration similar to that of the first embodiment, but the position of the IT0 pattern 21ai and the low resistance pattern 21a is relatively displaced. In this case, the aforementioned low resistance is also included in the terminal portion 21T.

When the Cr film 21as is removed, only the IT0 pattern 21ai is exposed, and the same cross-sectional structure as that of Fig. 7B can be obtained. Therefore, according to this embodiment, it is also possible to realize a good rolling state in which the IT substrate is rolled over the flexible substrate. [Fourth Embodiment] FIG. 14 shows a partial configuration of a passive matrix drive type organic EL display device according to a fourth embodiment of the present invention. However, in the above, the same reference numerals will be given to the portions already described, and the description will be omitted. Figure 14 is a cross-sectional view of the interval Β1 as in the seventh embodiment described above, but the passive matrix driven organic EL display device 26! 28〇544 of the present embodiment refers to the organic EL display device previously described in Fig. 6. The second modification of the second embodiment has a structure similar to that of the same, but the position of the ιΤ〇 pattern 21a! and the low resistance pattern 21 is reversed. That is, the Cr pattern 21a2 forms an upper pattern. In this case, the low-voltage Cr film 21a2 is removed from the terminal portion 21T, and only the meander pattern 21a! is exposed, and the same profile as that of the seventh figure can be obtained. Therefore, according to the present embodiment, a good rolling state in which the ruthenium pattern is used for rolling on the flexible substrate can be realized. Fig. 15 is another modification of Fig. 14, showing the upper side ΠΌ pattern in Fig. 14. The relationship between 21ai and the lower Cr pattern core is a relative displacement. In this case, in the terminal portion 21T, the low resistance '2 is also removed, and only the ΙΤΟ pattern 21ai is exposed, and the ΙΤΟ pattern is obtained. The seventh embodiment is the same as the cross-sectional structure. Therefore, according to the present embodiment, a good rolling state in which the soft substrate is rolled by the Tingyu wood can be realized. [Embodiment 5] 20 Part of the structure of the passive display device of the fifth embodiment of the present invention. However, in the sixteenth embodiment, the same reference frame is attached to the prior art, and the description is omitted. In the present embodiment, In the above-mentioned interval B1, two t = the low-resistance a pattern formed on the aforementioned 1T-turn pattern 错 causes the portion to generate a resistance. Here, the resistance forming portion of the resistor is formed so as to correspond to the 27 1280544 scan. The position of the line 21a is set on each of the wiring patterns 21c, that is, the number or length thereof is adjusted, and the resistance value of the wiring pattern 21c can be adjusted according to the corresponding scanning line 21a. Further, the present invention can be applied not only to The organic EL display device may also be used for other current-driven display devices other than passive matrix driving, such as a plasma display device (PDP), an LED array display device, or a light source, etc. Further, the present invention can be used not only Applied in current The movable display device can also be applied to a passive matrix drive type or an active matrix drive type liquid crystal display device. 10 [Industrial Applicability] According to the present invention, a drive electrode extending to a display area of a display device is converged and connected to a drive When the length of the auxiliary electrode is changed in accordance with the length of the wiring pattern of the connection portion in the connection portion of the circuit, the difference in resistance between the wiring patterns in the connection portion, that is, the voltage drop amount is not affected by the 15 wiring. The uniform value of the display device can be realized by the influence of the position of the pattern, and the uniform driver of the display device can be realized. [Simplified Drawing 3] FIG. 1 is a schematic structural view showing a conventional passive matrix driving type display device. 20 Fig. 2 is a schematic view showing the problem to be solved by the present invention. Figure 3 is a schematic diagram showing the subject matter to be solved by the present invention. Fig. 4 is a view showing a schematic configuration of a passive matrix drive type organic EL display device according to a first embodiment of the present invention. Fig. 5 is a partial cross-sectional view showing the organic EL display device of Fig. 4, Fig. 28 1280544. Fig. 6 is a detailed structural view showing a connection portion of the organic EL display device of Fig. 4. Fig. 7A is a cross-sectional structural view showing a connection portion of the organic EL display device of Fig. 4. Fig. 7B is a cross-sectional structural view showing the connection portion of the organic EL display device of Fig. 4. Fig. 8 is a view showing a schematic configuration of a passive matrix drive type organic EL display device according to a second embodiment of the present invention. 10 Fig. 9 is a detailed structural view showing a connection portion of the organic EL display device of Fig. 8. Fig. 10A is a cross-sectional structural view showing a connection portion of the organic EL display device of Fig. 8. Fig. 10B is a cross-sectional structural view showing the connecting portion 15 of the organic EL display device of Fig. 8. Fig. 11 is a view showing the characteristics of the organic EL display device of the present invention. Fig. 12 is a schematic view showing a modification of one of the organic display devices of Fig. 6. Figure 13 is a partial view of a passive matrix drive type organic 20 EL display device according to a third embodiment of the present invention. Figure 14 is a partial view showing a passive matrix driving type organic EL display device of a fourth embodiment of the present invention. Figure 15 is a partial view showing a passive matrix driving type organic EL display device of a fourth embodiment of the present invention. 29 1280544 Fig. 16 is a partial view of a passive matrix drive type organic EL display device according to a fifth embodiment of the present invention. [Description of main component symbols] 10, 20, 40... Organic EL display device 20B... Light-emitting layer 11, 21... Substrate 20C... Electron transport layer 11A, 21A··· Display area 20D... Cathode 11C, 21C, 41C.. connection portion 20E... organic EL element 11 a, 21 a · · · sweep 'dark, line 21T, 41T. · terminal portion 11b, 21b · data line pattern 11c... Wiring pattern 213_2, 41 a]...Cr pattern 12 A, 12B, 22 A, 22B... drive circuit 20A... hole transport layer 21c... wiring pattern 30

Claims (1)

1280544 X. Patent Application Range: 1. A display device comprising: a substrate; a first electrode group, which is arranged adjacent to the substrate, and is constructed by a plurality of electrode patterns extending along the first direction; The electrode group is arranged adjacent to the substrate, and is formed by a plurality of electrode patterns extending in a second direction different from the first direction; and a plurality of display elements are individually and patterned by one of the first electrode groups Forming at least an intersection with one of the electrode patterns of the second electrode group; at least the first electrode group has a plurality of electrode patterns, and a plurality of electrode patterns are connected to the driving circuit at each end, and the one end is up to the other end Each of the plurality of electrode patterns has a laminated structure, and the laminated structure has a first electric conductor having a first sheet resistance and a second thinner having a smaller electric resistance than the first thin layer. The second electric conductor of the layer resistance is constructed; each of the plurality of electrode patterns is provided with a south resistance region in which the second electric conductor has been removed by 20, The length of the south resistance region is such that each of the plurality of electrode patterns differs in accordance with the length of the electrode pattern. 2. The display device of claim 1, wherein in the plurality of electrode patterns, the length of the high resistance region is reduced by 31 1280544 along with the length of the electrode pattern. 3. If you apply for a patent scope! The display device of the item, wherein the plurality of electrode patterns have substantially the same resistance value from the other end of the front 31-end wire. "If you apply for a patent range! The display device of the item, wherein the substrate has: a display area, which has a number! The aforementioned majority formed by the parallel extension a terminal region, wherein the one end of the plurality of electrode patterns in the display region is arranged at a second interval smaller than the first interval; and the connecting portion is configured to cause the plurality of electrode patterns in the display region Connecting each of the corresponding ones of the terminal regions; removing the second electrical conductor in each of the electrode patterns of the terminal region, μ 1 15 The high resistance region is formed to be connected to the terminal region in the aforementioned connection region. 5. The display device according to claim 4, wherein in the display region, the plurality of electrode patterns constituting the ith electrode group are repeatedly formed in the second direction, and the il The length of the electrode pattern located at the center in the pattern is the most gas. The length of the electrode pattern is increased symmetrically from the center electrode pattern toward both outer directions. Concentrating on the display device of item 5, wherein the connection area is such that the majority of the electrode patterns of the river are maintained in a parallel-lined manner. 32 ^«0544 7·== display segmentation of the fifth item, wherein the high resistance region has a maximum length in the electrode pattern in the center, and the length of the high resistance region is symmetrical in the foregoing: the outer direction Reducer. ^ toward the two 5 8.: = _ item display device, wherein the high resistance region = by the electrode pattern of the w toward the two outer directions, according to the distance between the electrode pattern of the center of the front is linearly reduced. • 9·== The display device of item 7 of the profit range, wherein the 10 2 electrode pattern of the high resistance region is directed to the two outer directions, and the distance from the electrode pattern of the front mouth is stepped down. 10. The display of the first item of the patent application is composed of a transparent oxide material, and the first conductor is composed of a metal material. The display device of the first aspect of the invention, wherein the second conductor ’ is described above. 12. If the scope of the patent application is embedded in the theory, it is the clothing, wherein the second conductor is in the conductor of the first conductor. 13 groups like: two? ? In the first item, the first _ 电 图案 pattern is connected to another driving circuit, and the electrode pattern is the current path forming the driving current in the current hand. Display elements formed by U extraction] 4) The second organic EL display device as claimed in the patent application. The display device of claim 11, wherein the second conductive system is formed to partially overlap the first conductive body in the width direction of the electrode pattern. By. 16. The display device of claim 1, wherein the first conductor 5 is laminated on the second conductor. 17. The display device of claim 16, wherein the second conductive system is formed to partially overlap the first conductor in a width direction of the electrode pattern. 18. The display device of claim 1, wherein the substrate comprises a plurality of display regions having a plurality of electrode patterns formed in parallel at a first interval; and a terminal region in the display region The one end of the plurality of electrode patterns is arranged at a second interval smaller than the first interval; and the 15 connecting portion is configured to connect the plurality of electrode patterns in the display region to the corresponding one of the terminal regions; A plurality of the second conductors are removed from each of the electrode patterns of the electrode patterns in the connection region. 34