TWI280077B - Ag paste composition for microelectrode formation and microelectrode formed using the same - Google Patents
Ag paste composition for microelectrode formation and microelectrode formed using the same Download PDFInfo
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- TWI280077B TWI280077B TW093103048A TW93103048A TWI280077B TW I280077 B TWI280077 B TW I280077B TW 093103048 A TW093103048 A TW 093103048A TW 93103048 A TW93103048 A TW 93103048A TW I280077 B TWI280077 B TW I280077B
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- paste composition
- silver paste
- composition
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- 239000000203 mixture Substances 0.000 title claims abstract description 102
- 230000015572 biosynthetic process Effects 0.000 title abstract description 4
- 239000000843 powder Substances 0.000 claims abstract description 51
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 35
- 239000011230 binding agent Substances 0.000 claims abstract description 29
- 239000003381 stabilizer Substances 0.000 claims abstract description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 50
- 229910052709 silver Inorganic materials 0.000 claims description 50
- 239000004332 silver Substances 0.000 claims description 50
- 239000000178 monomer Substances 0.000 claims description 34
- 229920001577 copolymer Polymers 0.000 claims description 22
- -1 ethylhexyl Chemical group 0.000 claims description 19
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 239000003999 initiator Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 239000002518 antifoaming agent Substances 0.000 claims description 11
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 11
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 8
- 230000009477 glass transition Effects 0.000 claims description 7
- 238000006116 polymerization reaction Methods 0.000 claims description 7
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 6
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 5
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 230000004927 fusion Effects 0.000 claims description 4
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 4
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 claims description 4
- 238000003971 tillage Methods 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 150000002431 hydrogen Chemical group 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- ZPPSOOVFTBGHBI-UHFFFAOYSA-N lead(2+);oxido(oxo)borane Chemical compound [Pb+2].[O-]B=O.[O-]B=O ZPPSOOVFTBGHBI-UHFFFAOYSA-N 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 claims description 2
- KEVMYFLMMDUPJE-UHFFFAOYSA-N 2,7-dimethyloctane Chemical group CC(C)CCCCC(C)C KEVMYFLMMDUPJE-UHFFFAOYSA-N 0.000 claims description 2
- HXHAMAWOXRQJTJ-UHFFFAOYSA-N 2-(2-methylpropyl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC(C)C)=CC=C3SC2=C1 HXHAMAWOXRQJTJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 2
- 150000003672 ureas Chemical class 0.000 claims description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 3
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 claims 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 claims 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims 2
- 125000004386 diacrylate group Chemical group 0.000 claims 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims 2
- RBAFHGQBFIUGSW-UHFFFAOYSA-N 1-phenyl-2-sulfanylpropan-2-ol Chemical compound C(C1=CC=CC=C1)C(C)(O)S RBAFHGQBFIUGSW-UHFFFAOYSA-N 0.000 claims 1
- JSLWEMZSKIWXQB-UHFFFAOYSA-N 2-dodecylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CCCCCCCCCCCC)=CC=C3SC2=C1 JSLWEMZSKIWXQB-UHFFFAOYSA-N 0.000 claims 1
- XDLZGEOIKKECCA-UHFFFAOYSA-N 2-methylthiophene 1-oxide Chemical compound CC1=CC=CS1=O XDLZGEOIKKECCA-UHFFFAOYSA-N 0.000 claims 1
- FQMIAEWUVYWVNB-UHFFFAOYSA-N 3-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OC(C)CCOC(=O)C=C FQMIAEWUVYWVNB-UHFFFAOYSA-N 0.000 claims 1
- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 claims 1
- RWQVENFISXUILA-UHFFFAOYSA-N C(CC)(=O)OCCC(C)C.C(CC)(=O)OCCC(C)C Chemical compound C(CC)(=O)OCCC(C)C.C(CC)(=O)OCCC(C)C RWQVENFISXUILA-UHFFFAOYSA-N 0.000 claims 1
- BVZBYZVNNRZGGV-UHFFFAOYSA-N ClC1(CC=CC(=C1)CCOC1=CC=CC=C1)Cl Chemical compound ClC1(CC=CC(=C1)CCOC1=CC=CC=C1)Cl BVZBYZVNNRZGGV-UHFFFAOYSA-N 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002202 Polyethylene glycol Substances 0.000 claims 1
- 229920002125 Sokalan® Polymers 0.000 claims 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 claims 1
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 claims 1
- FHLPGTXWCFQMIU-UHFFFAOYSA-N [4-[2-(4-prop-2-enoyloxyphenyl)propan-2-yl]phenyl] prop-2-enoate Chemical class C=1C=C(OC(=O)C=C)C=CC=1C(C)(C)C1=CC=C(OC(=O)C=C)C=C1 FHLPGTXWCFQMIU-UHFFFAOYSA-N 0.000 claims 1
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- LBPABMFHQYNGEB-UHFFFAOYSA-N benzene;2h-triazole Chemical compound C=1C=NNN=1.C1=CC=CC=C1 LBPABMFHQYNGEB-UHFFFAOYSA-N 0.000 claims 1
- 150000001555 benzenes Chemical class 0.000 claims 1
- 239000008280 blood Substances 0.000 claims 1
- 210000004369 blood Anatomy 0.000 claims 1
- 238000002485 combustion reaction Methods 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229930189471 penicacid Natural products 0.000 claims 1
- 239000006187 pill Substances 0.000 claims 1
- 239000004584 polyacrylic acid Substances 0.000 claims 1
- 229920001223 polyethylene glycol Polymers 0.000 claims 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims 1
- XOALFFJGWSCQEO-UHFFFAOYSA-N tridecyl prop-2-enoate Chemical compound CCCCCCCCCCCCCOC(=O)C=C XOALFFJGWSCQEO-UHFFFAOYSA-N 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 27
- 238000000034 method Methods 0.000 abstract description 15
- 238000007639 printing Methods 0.000 abstract description 14
- 239000003960 organic solvent Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004094 surface-active agent Substances 0.000 abstract description 3
- 230000007613 environmental effect Effects 0.000 abstract 1
- 238000011161 development Methods 0.000 description 19
- 230000018109 developmental process Effects 0.000 description 19
- 238000001879 gelation Methods 0.000 description 9
- 239000011342 resin composition Substances 0.000 description 9
- 238000001878 scanning electron micrograph Methods 0.000 description 9
- 230000007261 regionalization Effects 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 8
- 238000000926 separation method Methods 0.000 description 7
- 125000003118 aryl group Chemical group 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 229920006243 acrylic copolymer Polymers 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000052 vinegar Substances 0.000 description 3
- 235000021419 vinegar Nutrition 0.000 description 3
- LBKIRBXELMWQRC-UHFFFAOYSA-N 1-methoxypropane-1,1-diol Chemical group CCC(O)(O)OC LBKIRBXELMWQRC-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000011668 ascorbic acid Substances 0.000 description 2
- 235000010323 ascorbic acid Nutrition 0.000 description 2
- 229960005070 ascorbic acid Drugs 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- AOJOEFVRHOZDFN-UHFFFAOYSA-N benzyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1=CC=CC=C1 AOJOEFVRHOZDFN-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
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- 230000035945 sensitivity Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 239000001124 (E)-prop-1-ene-1,2,3-tricarboxylic acid Substances 0.000 description 1
- NNNLYDWXTKOQQX-UHFFFAOYSA-N 1,1-di(prop-2-enoyloxy)propyl prop-2-enoate Chemical compound C=CC(=O)OC(CC)(OC(=O)C=C)OC(=O)C=C NNNLYDWXTKOQQX-UHFFFAOYSA-N 0.000 description 1
- OEYNWAWWSZUGDU-UHFFFAOYSA-N 1-methoxypropane-1,2-diol Chemical compound COC(O)C(C)O OEYNWAWWSZUGDU-UHFFFAOYSA-N 0.000 description 1
- LBHBTAVSJSJEQO-UHFFFAOYSA-N 2,3-dipropylbenzoic acid Chemical compound CCCC1=CC=CC(C(O)=O)=C1CCC LBHBTAVSJSJEQO-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- GJHVOJKCFVROLG-UHFFFAOYSA-N 2-dodecylxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CCCCCCCCCCCC)=CC=C3OC2=C1 GJHVOJKCFVROLG-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- DAWJJMYZJQJLPZ-UHFFFAOYSA-N 2-sulfanylprop-2-enoic acid Chemical compound OC(=O)C(S)=C DAWJJMYZJQJLPZ-UHFFFAOYSA-N 0.000 description 1
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 description 1
- AHRHOJAODFDUBQ-UHFFFAOYSA-N 3-methylbut-3-enyl 2-methylprop-2-enoate Chemical compound CC(=C)CCOC(=O)C(C)=C AHRHOJAODFDUBQ-UHFFFAOYSA-N 0.000 description 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 1
- ADGOOVVFTLKVKH-UHFFFAOYSA-N 4-propanoyloxybutyl propanoate Chemical compound CCC(=O)OCCCCOC(=O)CC ADGOOVVFTLKVKH-UHFFFAOYSA-N 0.000 description 1
- OQLZINXFSUDMHM-UHFFFAOYSA-N Acetamidine Chemical compound CC(N)=N OQLZINXFSUDMHM-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N Bisphenol A Natural products C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- VKIBAJCNBOXQMY-UHFFFAOYSA-N C(C(C)C)(=O)O.CC(C(C)(C)O)CCCO Chemical compound C(C(C)C)(=O)O.CC(C(C)(C)O)CCCO VKIBAJCNBOXQMY-UHFFFAOYSA-N 0.000 description 1
- LRSFXXWSTMRUSI-UHFFFAOYSA-N C1C2=C(C3=CC=CC=C31)C(=CC=C2)OS(=O)(=O)O Chemical compound C1C2=C(C3=CC=CC=C31)C(=CC=C2)OS(=O)(=O)O LRSFXXWSTMRUSI-UHFFFAOYSA-N 0.000 description 1
- 235000007575 Calluna vulgaris Nutrition 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000001840 Dandruff Diseases 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- GQPVFBDWIUVLHG-UHFFFAOYSA-N [2,2-bis(hydroxymethyl)-3-(2-methylprop-2-enoyloxy)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CO)(CO)COC(=O)C(C)=C GQPVFBDWIUVLHG-UHFFFAOYSA-N 0.000 description 1
- 229940091181 aconitic acid Drugs 0.000 description 1
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- 230000002411 adverse Effects 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- GCTPMLUUWLLESL-UHFFFAOYSA-N benzyl prop-2-enoate Chemical compound C=CC(=O)OCC1=CC=CC=C1 GCTPMLUUWLLESL-UHFFFAOYSA-N 0.000 description 1
- KFDLCDKGJYOUSO-UHFFFAOYSA-N boranylidyneytterbium Chemical compound B#[Yb] KFDLCDKGJYOUSO-UHFFFAOYSA-N 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N but-2-ene Chemical group CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- PVEOYINWKBTPIZ-UHFFFAOYSA-N but-3-enoic acid Chemical compound OC(=O)CC=C PVEOYINWKBTPIZ-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XEVRDFDBXJMZFG-UHFFFAOYSA-N carbonyl dihydrazine Chemical compound NNC(=O)NN XEVRDFDBXJMZFG-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- GTZCVFVGUGFEME-IWQZZHSRSA-N cis-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C\C(O)=O GTZCVFVGUGFEME-IWQZZHSRSA-N 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229940125773 compound 10 Drugs 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical class CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 125000005456 glyceride group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- ZLVXBBHTMQJRSX-VMGNSXQWSA-N jdtic Chemical compound C1([C@]2(C)CCN(C[C@@H]2C)C[C@H](C(C)C)NC(=O)[C@@H]2NCC3=CC(O)=CC=C3C2)=CC=CC(O)=C1 ZLVXBBHTMQJRSX-VMGNSXQWSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 1
- KCAMXZBMXVIIQN-UHFFFAOYSA-N octan-3-yl 2-methylprop-2-enoate Chemical compound CCCCCC(CC)OC(=O)C(C)=C KCAMXZBMXVIIQN-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- QIWKUEJZZCOPFV-UHFFFAOYSA-N phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=CC=C1 QIWKUEJZZCOPFV-UHFFFAOYSA-N 0.000 description 1
- WRAQQYDMVSCOTE-UHFFFAOYSA-N phenyl prop-2-enoate Chemical compound C=CC(=O)OC1=CC=CC=C1 WRAQQYDMVSCOTE-UHFFFAOYSA-N 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000006041 probiotic Substances 0.000 description 1
- 230000000529 probiotic effect Effects 0.000 description 1
- 235000018291 probiotics Nutrition 0.000 description 1
- SBYHFKPVCBCYGV-UHFFFAOYSA-N quinuclidine Chemical compound C1CC2CCN1CC2 SBYHFKPVCBCYGV-UHFFFAOYSA-N 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- PTLRDCMBXHILCL-UHFFFAOYSA-M sodium arsenite Chemical compound [Na+].[O-][As]=O PTLRDCMBXHILCL-UHFFFAOYSA-M 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/22—Electrodes, e.g. special shape, material or configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
- H01J2211/20—Constructional details
- H01J2211/22—Electrodes
- H01J2211/225—Material of electrodes
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Conductive Materials (AREA)
- Materials For Photolithography (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
1280077 玖、發明說明: 【發日月戶斤屬之枝街領城】 發明領域 本發明係關於-種用於形成微電極之高黏度銀漿組成 5物及利用該組成物所形成之微電極。1280077 玖 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 .
L· U 發明背景 最近,當對大尺寸、高密度、高精確度及高信賴度的 顯示裝置之需求增加時,已在發展多種圖形化技術。同樣 10地,已積極進行可用於與這些圖形化技術相符合之微電極 的組成物之研究。 電漿顯示板(於此之後,指為“PDP”)具有比液晶面板好 的優點,諸如反應速度快及尺寸大,因此,其現在已使用 在不同的區域。用於PDP的電極傳統上已使用網版印刷 15 (screen printing)方法來圖形化一電極材料而製造。但是, 習知的網版印刷方法需要很多的技術,且在網版印刷期 間,該糊狀物會由於低黏度而在基材上流動。同樣地,由 於篩網的低精確度,其難以達成在PDP中所需求的高精確 度、大篩網圖案。此外,習知的網版印刷方法有在印刷期 20 間會由篩網造成短路或分離及該燒結溫度如i,oo〇°c或更 南之缺點。 最近,已發展出使用感光性樹脂組成物而與大面積相 符合且可用於高精確度電極電路之光微影光刻裎序。該光 微影光刻程序為一種利用印刷一感光性樹脂組成物來形成 1280077 想要的圖案之方法,其中分散一導電微粉末以形成—均句 的厚膜’並使用想要之經成形的遮罩將因此形成的厚膜曝 光,接著以鹼性顯影劑顯影。 在該感光性細旨組成物與該導電㈣末間之可溶混 5性、在顯影期間感光性樹脂組成物與玻璃基材的黏附力及 該感光性樹脂組成物在燒結期間的耐熱性等為非常重要的 因素,其在形成高精確度電極電路時必需考慮。同樣地, 對該均句分散的導電微粉末(其為無機材料)來說,其在有機 的感光性樹脂組成物中需要3,_cP或更大的高黏度,以允 1〇許-剪切應力。該感光性樹脂組成物亦需要能穩定地對抗 外部力量(諸如在該導電微粉末表面上之靜電)以維持均句 的分散狀態、需要具有-低結晶性的聚合物樹脂、需要與 玻璃表面有好的黏附力及需要有好的熱分解性質。 習知的感光性導電糊狀物可在8〇〇艽或更高下燒結。於 15此實例中,因為通常使用碳酸鈉玻璃(其燒結溫度必需維持 在600°C或較低),習知的感光性導電糊狀物並不合適於製 造PDP。同樣地,在60(rC或較低下燒結習知的感光性導電 糊狀物之實例中,會發生產生燒結殘餘物及導電度降低之 問題。 20 關於分散在感光性樹脂組成物中的導電粉末,會以個 別的有機溶劑來處理傳統上已廣泛使用的黃金(Au)及銅 (Cu)粉末,以在曝光後顯影,但此會造成環境污染。同樣 地,尚有Αιι及Cu粉末昂貴及高燒結溫度的問題。 此外’關於商業上可購得的感光性樹脂組成物(其為一 1280077 具有500至l,500cP的低黏度之導電糊狀物,其使用板狀的 Ag粉末),該Ag粉末由於其板狀形式而具有差的分散特徵。 甚至當使用球形的Ag粉末時,亦會發生因數微米至數十微 米的大平均粒子尺寸而造成難以形成微圖案之問題。 5 【發明内容】 發明概要 因此,鑑於上述問題而製得本發明,而本發明之目標 為提供一種用來形成微電極之高黏度銀漿組成物。該銀漿 組成物可應用在600°C或較低的燒結製程中。同樣地,由於 10 高黏度,該銀漿組成物合適於形成一無法由習知的網版印 刷方法形成之精確的微電極,且該組成物具有好的印刷性 質。此外,因為不分別地使用表面活性劑及有機溶劑,該 銀漿組成物可簡單且經濟地製備且其不會污染環境。 圖式簡單說明 15 第1圖為在顯影由根據本發明的銀漿組成物所形成之 50微米圖案後的掃描式電子顯微照片(SEM); 第2圖為在顯影由根據本發明的銀漿組成物所形成之 50微米圖案後的SEM斷面; 第3圖為在燒結由根據本發明之銀漿組成物所形成之 20 50微米圖案後的SEM圖;及 第4圖為在燒結由根據本發明之銀漿組成物所形成之 50微米圖案後的SEM斷面。 I:實施方式3 詳細說明 1280077 根據本發明之觀點,已提供一種用來形成微電極之高 黏度銀漿組成物,其包括: a) 60至80重量°/c^Ag粉末; b) l至10重量%的無機黏合劑; 5 c)0.001至1重量%的安定劑;及 d)15至35重量%的負光阻組成物,其可分散導電微粉末 且可溶於驗中。 在該用來形成微電極的銀漿組成物中,該負光阻組成 物包括: 10 a)30至70重量%由下列式1所表示的丙烯酸酯共聚物光 阻: 式1 R3 —f-CH2 ——C—I-hCH2 ——C—1—L·U BACKGROUND OF THE INVENTION Recently, various graphic technologies have been developed as the demand for large-sized, high-density, high-accuracy, and high-reliance display devices has increased. Similarly, research on compositions for microelectrodes that are compatible with these patterning techniques has been actively pursued. The plasma display panel (hereinafter referred to as "PDP") has advantages over the liquid crystal panel, such as a fast reaction speed and a large size, and therefore, it has been used in different regions. Electrodes for PDPs have traditionally been fabricated using a screen printing method to pattern an electrode material. However, conventional screen printing methods require a lot of techniques, and during screen printing, the paste flows on the substrate due to low viscosity. As such, due to the low precision of the screen, it is difficult to achieve the high precision, large screen pattern required in the PDP. In addition, conventional screen printing methods have the disadvantage of causing short-circuiting or separation by the screen during the printing period 20 and the sintering temperature such as i, oo 〇 °c or south. Recently, photolithographic lithography processes using a photosensitive resin composition to conform to a large area and which can be used for a high-accuracy electrode circuit have been developed. The photolithography lithography process is a method of forming a desired pattern of 1280077 by printing a photosensitive resin composition in which a conductive fine powder is dispersed to form a thick film of a uniform sentence and is formed using a desired shape. The mask exposes the thick film thus formed, followed by development with an alkaline developer. The miscible compatibility between the photosensitive fine composition and the end of the conductive (four), the adhesion between the photosensitive resin composition and the glass substrate during development, and the heat resistance of the photosensitive resin composition during sintering. As a very important factor, it must be considered when forming a high-accuracy electrode circuit. Similarly, the conductive fine powder (which is an inorganic material) in which the average sentence is dispersed requires a high viscosity of 3, _cP or more in the organic photosensitive resin composition to allow 1 --cutting stress. The photosensitive resin composition also needs to be stable against external forces (such as static electricity on the surface of the conductive fine powder) to maintain a uniform state of dispersion, a polymer resin having a low crystallinity, and a glass surface to be required. Good adhesion and need to have good thermal decomposition properties. Conventional photosensitive conductive pastes can be sintered at 8 Torr or higher. In this example, the conventional photosensitive conductive paste is not suitable for the production of a PDP because sodium carbonate glass is usually used (its sintering temperature must be maintained at 600 ° C or lower). Similarly, in the case of sintering a conventional photosensitive conductive paste at 60 °C or lower, a problem of generation of a sintered residue and a decrease in electrical conductivity occurs. 20 Regarding Conductance Dispersed in a Photosensitive Resin Composition Powder, the traditionally widely used gold (Au) and copper (Cu) powders are treated with individual organic solvents to develop after exposure, but this will cause environmental pollution. Similarly, Αι and Cu powders are expensive. And the problem of high sintering temperature. Further, 'a commercially available photosensitive resin composition (which is a 1280077 low-viscosity conductive paste having 500 to 1,500 cP, which uses a plate-shaped Ag powder), The Ag powder has poor dispersion characteristics due to its plate-like form. Even when a spherical Ag powder is used, a large average particle size of from a micron to several tens of micrometers may occur, which causes a problem that it is difficult to form a micropattern. SUMMARY OF THE INVENTION Accordingly, the present invention has been made in view of the above problems, and an object of the present invention is to provide a high viscosity silver paste composition for forming a microelectrode. It is applied in a sintering process at 600 ° C or lower. Similarly, due to the high viscosity of 10, the silver paste composition is suitable for forming an accurate microelectrode which cannot be formed by a conventional screen printing method, and the composition It has good printing properties. In addition, since the surfactant and the organic solvent are not separately used, the silver paste composition can be prepared simply and economically and it does not pollute the environment. Brief Description of the Drawing 15 Figure 1 shows the development by Scanning electron micrograph (SEM) of a 50 micron pattern formed by the silver paste composition according to the present invention; Fig. 2 is a SEM after developing a 50 micron pattern formed by the silver paste composition according to the present invention Section 3; FIG. 3 is an SEM image after sintering a 20 50 micron pattern formed from the silver paste composition according to the present invention; and FIG. 4 is a 50 formed by sintering the silver paste composition according to the present invention. SEM cross section after micron pattern I: Embodiment 3 Detailed description 1280077 According to the present invention, a high viscosity silver paste composition for forming a microelectrode has been provided, which comprises: a) 60 to 80 weights/c ^Ag powder; b) 1 to 10% by weight of an inorganic binder; 5 c) 0.001 to 1% by weight of a stabilizer; and d) 15 to 35% by weight of a negative photoresist composition which is capable of dispersing a conductive fine powder and is soluble in the test. In the silver paste composition for forming a microelectrode, the negative photoresist composition comprises: 10 a) 30 to 70% by weight of an acrylate copolymer photoresist represented by the following formula 1: Formula 1 R3 - f- CH2——C—I-hCH2——C—1—
\ I XT |X COORi COOR2 其中Ri可為氫、苯基、苄基、經硝基取代的苯基、經 15 鹵素取代的苯基、經硝基取代的节基、CiSCw的烷基或經 羥基取代的CiSCw的烷基;R2可為乙基己基、異丁基、三 級丁基、辛基、3-甲氧基丁基或甲氧基丙二醇基團;R3可 為氫或甲基;可為氫或甲基;以為8至40的整數;n2為1 或2 ;或下列的式2 : 式2 8 20 1280077 R7 R4\ I XT |X COORi COOR2 wherein Ri can be hydrogen, phenyl, benzyl, nitro substituted phenyl, 15 halogen substituted phenyl, nitro substituted benzyl, CiSCw alkyl or hydroxy a substituted alkyl group of CiSCw; R2 may be an ethylhexyl, isobutyl, tert-butyl, octyl, 3-methoxybutyl or methoxypropanediol group; R3 may be hydrogen or methyl; Is hydrogen or methyl; an integer of 8 to 40; n2 is 1 or 2; or the following formula 2: Formula 2 8 20 1280077 R7 R4
其中R5可為氫或魏基;R6可為苯基、竣基或-〇COCH3 基團;R7<為氫或-ch2cooh基團;《^、汉^丨及叱如上述 所定義; 5 b)l〇奚40重量%之光可聚合的單體; c) 0.5灵1〇重量%之光聚合反應起始劑; d) o.m〇重量。/〇的抗發泡劑;及 重量%的平整劑。 根據本發明的另一個觀點,已提供一種利用該銀漿組 10 成物所形成的微電極。 於此之後,將更詳細描述的本發明之銀漿組成物。 本發明提供一種用來形成微電極的高黏度銀漿組成 物,其包含· a)60至80重量%的Ag粉末;^丨至⑺重量%的 然機黏合刻,c)0.001至1重量%的安定劑;及句Μ至%重量 15 %的負光阻組成物,其可分散導電微粉末且可溶於鹼中。 如使用於本文的導電微粉末為Ag粉末。該Ag粉末以6〇 至80重量%的量使用在該銀聚組成物中,較佳為以至乃重 量 〇/〇 〇 若Ag粉末的含量少於60重量%,々粉末的密度會減 20低,因此會增加在圖案形成及燒結後的表面多孔洞性。結 果’會造成電阻增加及短路。同樣地,由於低黏度,該銀 1280077 漿:組成物會在印刷期間於玻璃基材上流動。 另一方面,若Ag粉末的含量超過80重量%,會由於|占 度過高,而發生無法在玻璃基材上印刷或玻璃基材無法與 該篩網遮罩分離之印刷問題。同樣地,在印刷後之低平滑 5度會造成局部厚度差異及篩網遮罩的篩孔痕跡。此外,當Wherein R5 may be hydrogen or a thiol group; R6 may be a phenyl, fluorenyl or - oxime COCH3 group; R7<is hydrogen or a -ch2cooh group; "^, Han 丨 and 叱 are as defined above; 5 b) l 〇奚 40% by weight of photopolymerizable monomer; c) 0.5 lings by weight of photopolymerization initiator; d) om 〇 weight. / anti-foaming agent; and % by weight of leveling agent. According to another aspect of the present invention, there has been provided a microelectrode formed using the silver paste group. Hereinafter, the silver paste composition of the present invention will be described in more detail. The present invention provides a high-viscosity silver paste composition for forming a microelectrode comprising: a) 60 to 80% by weight of Ag powder; 丨 to (7)% by weight of the machine bonding, c) 0.001 to 1% by weight a stabilizer; and a negative photoresist composition of 15% by weight to % by weight, which disperses the conductive fine powder and is soluble in the base. The conductive fine powder as used herein is an Ag powder. The Ag powder is used in the silver-polymerized composition in an amount of from 6 Torr to 80% by weight, preferably so as to be 〇/〇〇. If the content of the Ag powder is less than 60% by weight, the density of the cerium powder is reduced by 20%. Therefore, the surface porosity of the surface after pattern formation and sintering is increased. The result will cause an increase in resistance and a short circuit. Similarly, due to the low viscosity, the silver 1280077 slurry: composition will flow over the glass substrate during printing. On the other hand, if the content of the Ag powder exceeds 80% by weight, the problem of printing which cannot be printed on the glass substrate or the glass substrate cannot be separated from the screen mask may occur due to excessive | Similarly, a low smoothness of 5 degrees after printing can cause local thickness differences and screen marks of the screen mask. In addition, when
Ag粉末密度增加時,“凹割,,現象會惡化。 對所使用的Ag粉末形狀並無限制。但是,關於分散特 徵,球形Ag粉末較佳。Ag粉末的平均粒子尺寸範圍較佳為 〇·3至3微米,更佳為0·5至2微米,最佳為0.6至1.3微米。 1〇 Ag粉末的純度較佳為96%或更高,更佳為98%或更 呵。此因為當Ag粉末純度減低時,會由於雜質而在燒結後 增加電阻。 、“本發明之銀漿組成物包括該無機黏合劑以燒結及將該 U導電命刀末黏附在玻璃基材上。該無機黏合劑的使用量為工至 〇重里%,較佳為2至6重量%,以該銀漿組成物的總重量 準。 右该無機黏合劑的含量少於!重量%時,在燒結後於玻 离基材與電極間之黏附力會減低,因此會造成電極分離。 /方面右该然機黏合劑的含量超過1〇重量%時,則燒 結後之電極電阻會增加或會造成短路。 、“、钱Ί劑較佳為一種或多種選自於由下列所組成 接物、酸^^接物鳴· si〇2 · 4 2 3 Sl〇2.M2〇’其中M為二價金屬離子及Μ,為單 價金屬離子。 20 1280077 該無機黏合劑的粒子形狀可為球形,但不限於此。該 無機黏合劑的平均粒子尺寸範圍較佳為0.3至3微米,更佳 為0.5至2微米,最佳為〇·6至I·3微米。 該無機黏合劑的玻璃轉換溫度(Tg)較佳為360至500°C 及玻璃軟化溫度(Ts)為400至550°C。 若該玻璃轉換溫度及玻璃軟化溫度各別低於360°C及 400°C時,則該無機黏合劑之燒結會於開始時即呈現有機材 料不完全分解的狀態。因此,有機材料會存在於該圖案中, 因此而降低該圖案之性能。 10 另一方面,若該玻璃轉換溫度及玻璃軟化溫度各別超 過500°C及55(TC時,該無機黏合劑之燒結會不完全。因此, 在微電極與玻璃基材間之黏附力會減低,圖案特徵會變 差,且會發生圖案分離。 15 將該無機黏合劑貯存在無濕氣的位置處較佳。此因為 被吸收在該無機黏合劑中的濕氣會促進該糊狀組成物凝膠 化。就這-點而言,較佳為在溫度80至35叱下乾燥該益機 黏合劑’以便外來物質不會附著在該無機黏合劑表面。若 將°亥热機黏合劑貯存在溫度高於35〇°C(此高於其轉換、、田产) 物二防止_狀組成 f儲存%定性及控制顯影速率。該安 使用量為舌旦 豕女疋劑的 重里%,較佳為0.005至1重量0/ 畀 〇·〇1至0·6重量。/ 、 取佳為 0 ’以該銀漿組成物的總重量為準。 1280077 若該安定劑的含量少於0.001重量%時,則該糊狀物容 易發生凝膠化。另一方面,若其超過1重量%時,該組成物 的黏度會減低或無法形成圖案。 可使用一般使用的抗氧化劑(例如,苯并三唑、抗壞血 5 酸、磷酸、亞磷酸或其鹽)作為安定劑,但不限於此。 本發明之銀漿組成物包括該負光阻組成物,其由於高 黏度而可使該導電微粉末(諸如Ag粉末)容易分散,且可在 鹼性顯影劑中高速顯影。該負光阻組成物的使用量為15至 35重量%,較佳為20至35重量%及最佳為25至35重量%,以 10 該銀漿組成物的總重量為準。 若該負光阻組成物的含量超過35重量%,則在電極形 成期間會於電極中顯現出孔洞。結果,電極阻抗會增加, 因此會在電路驅動期間造成短路。另一方面,若其少於15 重量%時,則難以獲得想要的電極圖案。 15 該負光阻組成物較佳包括: a)30至70重量%由下列式1所表示的丙烯酸酯共聚物光 阻: 式1 R3When the density of the Ag powder is increased, the phenomenon of "cutting is deteriorated." The shape of the Ag powder to be used is not limited. However, as for the dispersion characteristics, spherical Ag powder is preferable. The average particle size range of the Ag powder is preferably 〇· 3 to 3 μm, more preferably 0.5 to 2 μm, most preferably 0.6 to 1.3 μm. The purity of the 1 〇Ag powder is preferably 96% or more, more preferably 98% or more. When the purity of the Ag powder is reduced, the electrical resistance is increased after sintering due to impurities. "The silver paste composition of the present invention includes the inorganic binder to sinter and adhere the U-electrode to the glass substrate. The inorganic binder is used in an amount of from 5% by weight to about 5% by weight, based on the total weight of the composition of the silver paste. The content of the inorganic binder on the right is less than! At the weight %, the adhesion between the substrate and the electrode after sintering is reduced, so that the electrode is separated. / When the content of the right binder is more than 1% by weight, the electrode resistance after sintering may increase or cause a short circuit. , ", the money tanning agent is preferably one or more selected from the group consisting of the following, the acid ^ ^ 物 · · si 〇 2 · 4 2 3 Sl 〇 2. M2 〇 ' where M is a divalent metal ion And Μ, is a monovalent metal ion. 20 1280077 The inorganic binder may have a spherical shape, but is not limited thereto. The inorganic binder preferably has an average particle size ranging from 0.3 to 3 μm, more preferably from 0.5 to 2 μm. The optimum is 〇·6 to I·3 μm. The inorganic binder has a glass transition temperature (Tg) of preferably 360 to 500 ° C and a glass softening temperature (Ts) of 400 to 550 ° C. If the glass is converted When the temperature and the glass softening temperature are respectively lower than 360 ° C and 400 ° C, the sintering of the inorganic binder will initially exhibit a state in which the organic material is not completely decomposed. Therefore, an organic material may exist in the pattern. Therefore, the performance of the pattern is lowered. On the other hand, if the glass transition temperature and the glass softening temperature exceed 500 ° C and 55 (TC, respectively, the sintering of the inorganic binder may be incomplete. Therefore, in the microelectrode and The adhesion between the glass substrates will be reduced, the pattern features will be deteriorated, and Pattern separation. 15 It is preferred to store the inorganic binder at a moisture-free position because moisture absorbed in the inorganic binder promotes gelation of the paste composition. Preferably, the probiotic binder is dried at a temperature of 80 to 35 Torr so that foreign substances do not adhere to the surface of the inorganic binder. If the heat exchanger is stored at a temperature higher than 35 〇 ° C (this It is higher than its conversion, and it is produced in the second place. The second component prevents the _ composition f storage % qualitative and controls the development rate. The usage amount is the weight % of the tongue and dandruff, preferably 0.005 to 1 weight 0 / 畀〇 · 〇1 to 0·6 weight. /, preferably 0' is based on the total weight of the silver paste composition. 1280077 If the content of the stabilizer is less than 0.001% by weight, the paste is prone to gelation. On the other hand, if it exceeds 1% by weight, the viscosity of the composition may be lowered or the pattern may not be formed. Generally, an antioxidant (for example, benzotriazole, ascorbic acid, phosphoric acid, or arsenic) may be used. Phosphoric acid or a salt thereof is used as a stabilizer, but is not limited thereto. Silver of the present invention The composition includes the negative photoresist composition which can easily disperse the conductive fine powder (such as Ag powder) due to high viscosity, and can be developed at high speed in an alkaline developer. The negative photoresist composition is used in an amount of 15 to 35% by weight, preferably 20 to 35% by weight and most preferably 25 to 35% by weight, based on the total weight of the silver paste composition. If the content of the negative photoresist composition exceeds 35% by weight Then, holes are formed in the electrode during electrode formation. As a result, the electrode impedance is increased, so that a short circuit occurs during driving of the circuit. On the other hand, if it is less than 15% by weight, it is difficult to obtain a desired electrode. pattern. The negative photoresist composition preferably comprises: a) 30 to 70% by weight of an acrylate copolymer photoresist represented by the following formula 1: Formula 1 R3
COORi COOR2 20 其中Ri可為氫、苯基、苄基、經硝基取代的苯基、經 鹵素取代的苯基、經硝基取代的节基、匕至匚^烷基或經羥 12 1280077 基取代的01至(31()烷基;R2可為乙基己基、異丁基、三級丁 基、辛基、3-曱氧基丁基或甲氧基丙二醇基團;R3可為氫 或甲基;R4可為氫或甲基;〜為8至40的整數;112為1或2 ; 或下列之式2 :COORi COOR2 20 wherein Ri may be hydrogen, phenyl, benzyl, nitro substituted phenyl, halogen substituted phenyl, nitro substituted benzyl, fluorenyl to hydrazine or hydroxy 12 1280077 based Substituted 01 to (31()alkyl; R2 may be ethylhexyl, isobutyl, tert-butyl, octyl, 3-decyloxybutyl or methoxypropanediol groups; R3 may be hydrogen or Methyl; R4 may be hydrogen or methyl; ~ is an integer from 8 to 40; 112 is 1 or 2; or Formula 2 below:
其中R5可為氫或羧基;化6可為苯基、羧基或-〇COCH3 基團;R?可為氫或-CH2COOH基團;^、^、〜及叱如上述 所定義; b) 10至40重量%之光可聚合的單體; c) 0.5至10重量。/〇之光聚合反應起始劑; d) 0.1至1〇重量%之抗發泡劑;及 e) 0.1至1〇重量%之平整劑。 式1之丙稀酸酯共聚物的黏度為丨〇,_至2〇,_cp且分 15子1為15,〇〇〇至50,000者較佳,更佳為25,000至30,000。同 樣地關於印刷方法,該丙烯酸醋共聚物之玻璃轉換溫度 車又佳為1〇〇C或更高。若該玻璃轉換溫度低於100°c時,由 於強黏附力而會發生與印刷相關的問題。 20和羧酸、芳香族單體、自身^ 塑化的單體外之丙烯酸單體。 自身可塑化的單體及除了該自身可 可使用來焱備該丙烯酸酯共聚物的單體實例包括不飽 知羧酸、芳香施s赫、A A______ 13 1280077 可使用不飽和羧酸來提供該可溶於鹼的組成物。該不 飽和羧酸的實例包括丙烯酸、曱基丙歸酸、分解烏頭酸、 順丁烯二酸、反丁烯二酸、乙烯基醋酸及其酐。該不飽和 羧酸的使用量較佳為20至50重量%,以該丙烯酸酯共聚物 5 的總重量為準。若該不飽和竣酸的含量超過50重量%時, 則容易在聚合期間發生凝膠化、調整聚合程度困難及該樹 脂組成物在曝光期間的儲存穩定性會降低。另一方面,若 該不飽和羧酸的含量少於20重量%時,則需要增加顯影時 間。 10 可使用該芳香族單體來提供在顯影期間與玻璃表面的 黏附力及穩定所形成的圖案。該芳香族單體的實例包括苯 乙烯、甲基丙烯酸苄酯、丙烯酸苄酯、丙烯酸苯酯、甲基 丙烯酸苯酯、丙烯酸2-或4-硝基苯酯、甲基丙烯酸或4_硝 基苯醋、曱基丙烯酸2-或4-頌基节g旨、丙稀酸2_或4_氯苯醋 15及甲基丙稀g&2_或4_氯苯g旨。該芳香族單體的較佳使用量為 15至45重量%’更佳為觀4{)重量%,㈣丙烯酸自旨共聚物 的總重量為準。若該芳香族單體的含量超賴重量%時, 則需要增加顯影時間。同樣地,由於耐熱性增加,該感光 性樹脂會在燒結期間遺留下,因此減低本徵電極特徵。另 20 -方面’右該芳香族單體的含量少於15重量%,在顯影期 間與該玻璃表面的黏附力會減低。結果,容易發生圖案分 離及圖料直度降低,此會造成難以獲得—穩定的圖案。 特別是,提供該自身可塑化的單體來調整聚合程度及 減低結晶性。該自身可塑化的單體實例包括(甲基)丙稀酸2_ 14 1280077 乙基己酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸三級丁酯、 (甲基)丙烯酸辛酯、(甲基)丙烯酸3-甲氧基丁酯及(甲基)丙 烯酸甲氧基丙二醇酯。該自身可塑化的單體使用量較佳為3 至15重量%,更佳為5至10重量%,以該丙烯酸酯共聚物的 5 總重量為準。若該自身可塑化的單體含量超過15重量% 時,在顯影期間圖案分離會惡化且圖案平直度會降低。另 一方面,若該自身可塑化的單體之含量少於3重量%時,則 該聚合程度會增加,因此會造成凝膠化。甚至當凝膠化不 發生時,所形成的圖案會在顯影後容易損傷。 10 提供除了該自身可塑化的丙烯酸酯單體外之丙烯酸酯 單體,以調整該玻璃轉換溫度、與該基材的黏附力及該丙 烯酸酯共聚物的極性。該丙烯酸酯單體的實例包括(甲基) 丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥辛酯、(甲基)丙烯酸甲 酯、(甲基)丙烯酸乙酯及丙烯酸正丁酯。考慮到玻璃轉換溫 15 度、耐熱性及該丙烤酸酯共聚物的顯影劑之親水性,該丙 烯酸酯單體的較佳使用量為10至30重量%,以該丙烯酸酯 共聚物的總重量為準。 該丙烯酸酯共聚物可藉由在具有可適當防止單體凝膠 化之極性的溶劑中,聚合上述描述的四種單體而獲得。該 2〇 溶劑的較佳實例包括醋酸卡必醇酯、r-丁内酯、二甘醇丁 基醚、單異丁酸三甲基戊二醇酯及雙丙二醇單乙基醚。 式1或2的丙烯酸酯共聚物樹脂之使用量為30至70重量 %。若該丙烯酸酯共聚物的含量少於30重量%時,圖案形成 變困難。若其超過70重量%時,粉末的分散特徵會變差。 15 1280077 在該負光阻組成物中,該光聚合反應起始劑可為下列 一種或混合物:三啡類、二笨基酮類、乙醯笨類、咪唑類 及噻噸酮類。該光聚合反應起始劑的實例包括2,4-雙三氣甲 基-6-對-甲氧基苯乙烯基_s_三啡、2-對-甲氧基苯乙烯基 5 -4,6-雙三氣甲基-s-三畊、2,‘三氯甲基-6-三啡、2,4-三氯甲 基-4-甲基萘基-6-三讲、二苯基酮、對_(二乙基胺基)二苯基 酮、2,2-二氯-4-苯氧基乙醯笨、2,2,-二乙氧基乙醯苯、2,2,-二丁苯氧基乙醯苯、2-羥基-2-甲基丙醯苯、對-三級丁基三 氣乙醯苯、對-三級丁基二氯乙醯苯、4,4,-乙基胺基二苯基 10酮、噻噸酮、2-氣噻噸酮、2-甲基噻噸酮、2-異丁基噻噸酮、 2-十二烷基嘍噸酮、2,4-二甲基噻噸酮、及2,4-二乙基噻噸 酮-2,2’-雙_2_氯苯基_4,5,4’,5’_四苯基_2’-1,2’_雙咪唑。該光聚 合反應起始劑的較佳使用量為0.5至10重量%,更佳為2至4 重量%。若該光聚合反應起始劑的含量超過1〇重量%,則儲 15存穩定性會減低,且由於高硬化程度,在顯影期間的圖案 分離會變差。另一方面,若其少於〇.5重量%時,則由於低 靈敏度,正常的圖案形成變困難且圖案平直度會變差。 在該負光阻組成物中,該光可聚合的單體可為了列多 官能基丙烯酸酯衍生物之一種或混合物。該光可聚合的單 2〇 體之實例包括:二丙浠酸1,4-丁二醇酯、二丙烯酸ι,3-丁二 醇酯、二丙烯酸乙二醇酯、二丙浠酸二甘醇酯、二丙烯酸 二縮三乙二旨、二丙沐酸聚乙二醉自旨、二丙驗酸二異戍 四酵酯(dipentaerythritolkisacrylate)、羥基五丙烯酸二異戊 四酵酯、二丙浠酸甘油酯、三甲基丙稀酸三經甲基丙烧酯、 16 1280077 三甲基丙烯酸異戊四醇酯、二甲基丙烯酸異戊四醇酯、三 甲基丙烯酸葡萄糖醇酯、二丙烯酸雙酚A酯衍生物、三丙烯 酸三羥曱基丙烷酯及聚丙烯酸二異戊四醇酯。該光可聚合 的單體之較佳使用量為1〇至40重量%,更佳為20至30重量 5 %。若該光可聚合的單體之含量超過40重量%時,則由於高 硬化程度,在顯影期間會圖案分離且圖案平直度會變差。 另—方面,若其少於1〇重量%時,由於低靈敏度及低硬化 程度,正常的圖案形成變困難且圖案平直度會降低。 同時,在使用印刷方法塗佈那時,在將該Ag粉末與其 1〇匕組分混合期間會產生微氣泡。由於高黏度而存在於厚膜 中的微氣泡會在燒結期間轉換成針孔,因此會造成電極分 離。可提供該負光阻組成物的抗發泡劑來防止此電極分 離。提供該平整劑以因該光阻組成物的表面張力而減輕在 该Ag粉末與該光阻組成物間之可溶混性減低,及減少因缺 15 乏薄膜均勻性而造成之問題。 該平整劑的實例包括陰離子共聚物及經芳烷基改性的 聚曱基烷基矽氧烷類。該抗發泡劑的實例包括經聚酯改性 的聚甲基烧基石夕氧烧類、聚石夕氧院類、非石夕基底的聚合物 化合物、經改性的尿素溶液、經聚酯改性的二甲基聚矽氣 20燒類及經聚S旨改性的二甲基聚石夕氧院共聚物。 乳 抗發泡劑與平整劑每種的使用量較佳為0.1至1〇重量 %。使用多於10重量%的抗發泡劑及平整劑會在顯影期間遺 留下剩餘的薄膜。若抗發泡劑與平整劑的含量少於01重量 0/0時,不容易獲得想要的特徵。 里 17 1280077 本發明之銀漿組成物可使用行星式混合器,藉由預混 合如上所述之Ag粉末、無機黏合劑、安定劑及負光阻組成 物來製備,並使用研磨機(諸如3-輥筒製粉機)均勻地分散該 在光阻組成物中的Ag粉末、無機黏合劑及安定劑,以形成 5 一糊狀物相。因此製備的銀漿組成物之黏度為3,〇〇〇至 60,000cP,且具有假塑性性質。這些特徵讓該銀漿組成物 可使用作為用來形成微電極的組成物,該形成微電極用的 組成物在印刷期間需要具有低抗應力性、提高的印刷特徵 (雖然有南黏度)及在印刷後有高平滑度。 1〇 根據本發明的另一個觀點,已提供一種利用該銀漿組 成物形成的微電極。該微電極可藉由一微圖案形成步驟及 一燒結步驟來形成。 在該微圖案形成步驟中,使用網版印刷機(其使用一篩 網遮罩,諸如SUS 325篩孔及SUS 400篩孔),將如上述所製 15備的銀漿組成物印刷在該基材表面上。在溫度80至12〇。(:的 對流烘箱中乾燥該經塗佈的樣品10至4〇分鐘。將因此形成 之經銀漿塗佈的薄膜曝露至一含有365奈米的複雜波長之 光源(諸如汞燈)以形成圖案,接著使用適#的驗性顯影劑 (諸如NaAO3溶液、KOH及ΤΑΜ II),在室溫至刈它下顯影。Wherein R5 may be hydrogen or a carboxyl group; the compound 6 may be a phenyl group, a carboxyl group or a -〇COCH3 group; R? may be a hydrogen or a -CH2COOH group; ^, ^, ~ and 叱 are as defined above; b) 10 to 40% by weight of photopolymerizable monomer; c) 0.5 to 10 parts by weight. / 〇 photopolymerization initiator; d) 0.1 to 1% by weight of an anti-foaming agent; and e) 0.1 to 1% by weight of a leveling agent. The acrylate copolymer of Formula 1 has a viscosity of 丨〇, _ to 2 〇, _cp and 15 of 1 is 15 and preferably 〇〇〇 to 50,000, more preferably 25,000 to 30,000. Similarly, with regard to the printing method, the glass transition temperature of the acrylic vinegar copolymer is preferably 1 〇〇 C or higher. If the glass transition temperature is lower than 100 ° C, printing-related problems occur due to strong adhesion. 20 and an acrylic monomer other than a carboxylic acid, an aromatic monomer, or a self-plasticized monomer. Self-plasticizable monomers and examples of monomers which can be used to prepare the acrylate copolymer in addition to the self include unsaturated carboxylic acids, aromatics, A A______ 13 1280077, unsaturated carboxylic acids can be used to provide the A composition that is soluble in alkali. Examples of the unsaturated carboxylic acid include acrylic acid, mercaptopropionic acid, decomposed aconitic acid, maleic acid, fumaric acid, vinyl acetic acid, and anhydrides thereof. The unsaturated carboxylic acid is preferably used in an amount of from 20 to 50% by weight based on the total weight of the acrylate copolymer 5. When the content of the unsaturated decanoic acid exceeds 50% by weight, gelation tends to occur during the polymerization, the degree of polymerization is difficult to be adjusted, and the storage stability of the resin composition during exposure is lowered. On the other hand, if the content of the unsaturated carboxylic acid is less than 20% by weight, it is necessary to increase the development time. 10 The aromatic monomer can be used to provide a pattern formed by adhesion to the glass surface during development and stabilization. Examples of the aromatic monomer include styrene, benzyl methacrylate, benzyl acrylate, phenyl acrylate, phenyl methacrylate, 2- or 4-nitrophenyl acrylate, methacrylic acid or 4-nitro Benzene vinegar, thioglycol 2- or 4-fluorenyl sulphate, acrylic acid 2_ or 4- chlorobenzene vinegar 15 and methyl propylene g & 2 or 4 chlorobenzene g. The aromatic monomer is preferably used in an amount of 15 to 45% by weight, more preferably 4% by weight, based on the total weight of the copolymer. If the content of the aromatic monomer exceeds % by weight, it is necessary to increase the development time. Also, since the heat resistance is increased, the photosensitive resin is left during sintering, thus reducing the intrinsic electrode characteristics. On the other hand, the content of the aromatic monomer is less than 15% by weight, and the adhesion to the surface of the glass during development is lowered. As a result, pattern separation and texture straightness are liable to occur, which results in difficulty in obtaining a stable pattern. In particular, the self-plasticizable monomer is provided to adjust the degree of polymerization and to reduce crystallinity. Examples of the self-plasticizable monomer include (meth)acrylic acid 2_ 14 1280077 ethylhexyl ester, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, and octyl (meth)acrylate. , 3-methoxybutyl (meth)acrylate and methoxypropylene glycol (meth)acrylate. The self-plasticizable monomer is preferably used in an amount of from 3 to 15% by weight, more preferably from 5 to 10% by weight, based on the total weight of the acrylate copolymer. If the content of the self-plasticizable monomer exceeds 15% by weight, pattern separation may deteriorate during development and pattern flatness may decrease. On the other hand, if the content of the self-plasticizable monomer is less than 3% by weight, the degree of polymerization increases, and gelation is caused. Even when gelation does not occur, the formed pattern is easily damaged after development. 10 An acrylate monomer other than the self-plasticizable acrylate monomer is provided to adjust the glass transition temperature, adhesion to the substrate, and polarity of the acrylate copolymer. Examples of the acrylate monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxyoctyl (meth)acrylate, methyl (meth)acrylate, ethyl (meth)acrylate, and n-butyl acrylate. . The acrylate monomer is preferably used in an amount of 10 to 30% by weight, based on the glass transition temperature of 15 degrees, the heat resistance, and the hydrophilicity of the developer of the acrylic acid ester copolymer, with the total of the acrylate copolymer. The weight will prevail. The acrylate copolymer can be obtained by polymerizing the above-described four monomers in a solvent having a polarity which can appropriately prevent gelation of the monomer. Preferable examples of the solvent include carbitol acetate, r-butyrolactone, diethylene glycol butyl ether, trimethyl pentylene glycol monoisobutyrate, and dipropylene glycol monoethyl ether. The acrylate copolymer resin of the formula 1 or 2 is used in an amount of from 30 to 70% by weight. If the content of the acrylate copolymer is less than 30% by weight, pattern formation becomes difficult. If it exceeds 70% by weight, the dispersion characteristics of the powder may deteriorate. 15 1280077 In the negative photoresist composition, the photopolymerization initiator may be one or a mixture of the following: trimorph, diphenyl ketone, acetamidine, imidazole, and thioxanthone. Examples of the photopolymerization initiator include 2,4-bistrismethyl-6-p-methoxystyryl-s-trisyl, 2-p-methoxystyryl-5-4, 6-bistrimethylmethyl-s-three tillage, 2, 'trichloromethyl-6-trione, 2,4-trichloromethyl-4-methylnaphthyl-6-tris, diphenyl Ketone, p-(diethylamino)diphenyl ketone, 2,2-dichloro-4-phenoxyethyl hydrazine, 2,2,-diethoxyethyl benzene, 2,2,- Dibutylphenoxyacetam, 2-hydroxy-2-methylpropenzene, p-tertiary butyl triethylene acetophenone, p-tertiary butyl dichloroacetam, benzene, 4,4,- Ethylaminodiphenyl 10 ketone, thioxanthone, 2-air thioxanthone, 2-methylthioxanthone, 2-isobutylthioxanthone, 2-dodecylxanthone, 2, 4-dimethylthioxanthone, and 2,4-diethylthioxanthone-2,2'-bis_2-chlorophenyl_4,5,4',5'-tetraphenyl-2' -1,2'_biimidazole. The photopolymerization initiator is preferably used in an amount of from 0.5 to 10% by weight, more preferably from 2 to 4% by weight. If the content of the photopolymerization initiator is more than 1% by weight, the storage stability is lowered, and the pattern separation during development is deteriorated due to the high degree of hardening. On the other hand, if it is less than 5% by weight, normal pattern formation becomes difficult and pattern flatness is deteriorated due to low sensitivity. In the negative photoresist composition, the photopolymerizable monomer may be one or a mixture of a polyfunctional acrylate derivative. Examples of the photopolymerizable mono-2-steroid include: 1,4-butanediol dipropionate, ι,3-butylene glycol diacrylate, ethylene glycol diacrylate, diganyl dipropionate Alcohol ester, diethylene triacrylate, dipropyl benzoic acid, dipentaerythritolkisacrylate, diisopentyl hydroxypentaacrylate, dipropionate Acid glyceride, trimethyl methacrylate trimethyl propyl acrylate, 16 1280077 isopentenyl methacrylate, pentaerythritol dimethacrylate, ditol trimethyl acrylate, diacrylic acid Bisphenol A ester derivative, trishydroxypropyl propane triacrylate and polyisoprenyl acrylate. The photopolymerizable monomer is preferably used in an amount of from 1 to 40% by weight, more preferably from 20 to 30% by weight. If the content of the photopolymerizable monomer exceeds 40% by weight, the pattern is separated during development and the flatness of the pattern is deteriorated due to the high degree of hardening. On the other hand, if it is less than 1% by weight, normal pattern formation becomes difficult and pattern flatness is lowered due to low sensitivity and low degree of hardening. Meanwhile, at the time of coating using a printing method, microbubbles are generated during mixing of the Ag powder with its component. The microbubbles present in the thick film due to high viscosity are converted into pinholes during sintering, thus causing electrode separation. An anti-foaming agent of the negative photoresist composition can be provided to prevent separation of the electrode. The leveling agent is provided to reduce the miscibility between the Ag powder and the photoresist composition due to the surface tension of the photoresist composition, and to reduce the problem caused by the lack of uniformity of the film. Examples of the leveling agent include an anionic copolymer and an aralkyl group-modified polydecylalkyl oxane. Examples of the anti-foaming agent include a polyester-modified polymethyl carbazide, a polyoxan, a non-stone substrate polymer compound, a modified urea solution, and a polyester. Modified dimethyl polyfluorene gas 20 and dimethyl polyoxo copolymer modified by poly S. The amount of the emulsion anti-foaming agent and the leveling agent used is preferably from 0.1 to 1% by weight. The use of more than 10% by weight of the anti-foaming agent and the leveling agent leaves the remaining film during development. If the content of the anti-foaming agent and the leveling agent is less than 01% by weight 0/0, the desired characteristics are not easily obtained.里 17 1280077 The silver paste composition of the present invention can be prepared by premixing an Ag powder, an inorganic binder, a stabilizer, and a negative photoresist composition as described above using a planetary mixer, and using a grinder (such as 3). - Roller pulverizer) uniformly disperses the Ag powder, the inorganic binder and the stabilizer in the photoresist composition to form a 5-paste phase. The silver paste composition thus prepared has a viscosity of 3, 〇〇〇 to 60,000 cP, and has pseudoplastic properties. These features allow the silver paste composition to be used as a composition for forming microelectrodes that require low stress resistance, improved printing characteristics (although having a south viscosity) and during printing. High smoothness after printing. According to another aspect of the present invention, there has been provided a microelectrode formed using the silver paste composition. The microelectrode can be formed by a micropattern forming step and a sintering step. In the micropattern forming step, a silver paste composition prepared as described above is printed on the base using a screen printing machine using a mesh mask such as SUS 325 mesh and SUS 400 mesh. On the surface of the material. At a temperature of 80 to 12 〇. The coated sample is dried in a convection oven for 10 to 4 minutes. The thus formed silver paste coated film is exposed to a light source (such as a mercury lamp) containing a complex wavelength of 365 nm to form a pattern. Then, using an appropriate developer (such as NaAO3 solution, KOH, and hydrazine II), it was developed at room temperature to 刈.
20 在該燒結步驟中,將上述形成的微圖案在500至6〇〇°C 的電爐中燒結10至60分鐘。在燒結期間,為了完全移除負 光阻組成物,將該微圖案維持在溫度約3〇〇s4〇〇t:Ti〇s 60分鐘。當該光阻組成物未完全移除時,該光阻組成物的 有機材料會以碳酸鹽形式存在,因此會不完全燒結該⑽分 1280077 末。同樣地,在燒結後電阻會增加或該微圖案會變成介電 質。再者,會在燒結後於該微圖案中產生微裂痕。 於此之後,本發明將以實例更特別地說明。但是,下 列實例僅提供闡明用,因此本發明不限於此或不由其限 5 制。除非在實例中有詳細指明,否則數值顯示出重量%。 實例 實例1至4 可分散導電微粉末且可溶於鹼的負光阻組成物之丙烯酸酯 共聚物光阻的製備 10 根據顯現下列在表1中的組成物及含量,透過聚合反應 來製備式1的丙烯酸酯共聚物。於此,作為使用於該聚合反 應的溶劑,在實例1至3中使用50重量%的T - 丁内酯 (GBL),而在實例4中使用50重量%的雙丙二醇單乙基醚 (DPGME)。 15 表1 部分 實例1 實例2 實例3 實例4 甲基丙烯酸苄酯(莫耳%) 35 30 41 41 曱基丙烯酸 50 45 45 45 甲基丙烯酸2-羥乙酯(莫耳%) 8 - 7 7 甲基丙烯酸乙基己酯(莫耳%) 7 7 7 7 甲基丙烯酸甲酯(莫耳%) - 18 - - 分子量 30,000 28,000 28,000 35,000 黏度(cP) 15,000 12,000 12,000 >20,000 實例5至9 可分散導電微粉末且可溶於鹼的負光阻組成物之製備 根據顯現在下列表2中的組成物及含量,將光聚合反應 19 1280077 起始劑、抗發泡劑及平整劑加入至實例1至4的丙烯酸酯共 聚物’接著在室溫下攪拌2小時。然後,向那裏加入光可聚 合的單體並在室溫下攪拌4小時,以提供該可分散導電微粉 末且可溶於鹼的負光阻組成物。以4〇〇篩孔過濾如此獲得之 光阻組成物,以移除雜質。 表2 組成物 實例5 實例6 實例7 實例8 實例9 丙烯酸酯共 聚物 實例1 - - 60.1 51.1 - 實例2 - - - 喝 60.1 實例3 - 68.0 - - - 實例4 71.7 - - - - 光聚合反應起始劑 1.6 2.0 2.8 2.8 2.8 光可聚合的單體 14.3 28.1 30.8 40.9 30.8 抗發泡劑 3.7 0.1 4.0 3.1 4.0 平整劑 2 0.1 2.0 2.0 2.0 安定劑 其他 复例10 數漿組成物之製f ° 混合65重量°/q的Ag粉末、3重量%的無機黏合劑、0.05 重量%的安定劑及31·95重量%可分散導電微粉末且可溶於 鹼的負光阻組成物,使用一行星式混合器來預混合且使用 夂輥筒製粉機均勻分散,以提供一銀漿組成物。 f例11至14 5 龜據Ag粉主評估該银漿组成物 20 1280077 表3 部分 實例11 實例12 實例13 實例14 Ag粉末 63 67 71 73 無機黏合劑 2.95 2.95 2.95 2.95 安定劑 0.05 0.05 0.05 0.05 光阻組成物 34 30 26 24 顯影性質 好 好 好 好 圖案形成(微米) 50 50 50 50 顯影後的厚度 8 9 11 11 燒結後之厚度 4 5 6 7 黏度(cP) 10,000 13,000 14,000 20,00020 In the sintering step, the micropattern formed above is sintered in an electric furnace at 500 to 6 ° C for 10 to 60 minutes. During the sintering, in order to completely remove the negative photoresist composition, the micropattern was maintained at a temperature of about 3 〇〇s 4 〇〇 t: Ti 〇s for 60 minutes. When the photoresist composition is not completely removed, the organic material of the photoresist composition exists as a carbonate, and thus the (10) minute 1280077 is not completely sintered. Similarly, the resistance will increase after sintering or the micropattern will become dielectric. Furthermore, microcracks are generated in the micropattern after sintering. Hereinafter, the invention will be more specifically illustrated by way of examples. However, the following examples are provided for clarification only, and thus the invention is not limited thereto or limited thereto. Values show % by weight unless otherwise specified in the examples. EXAMPLES Examples 1 to 4 Preparation of acrylate copolymer photoresist which can disperse conductive fine powder and alkali-soluble negative photoresist composition 10 According to the following composition and content in Table 1, the preparation was carried out by polymerization. An acrylate copolymer of 1. Here, as a solvent used for the polymerization, 50% by weight of T-butyrolactone (GBL) was used in Examples 1 to 3, and 50% by weight of dipropylene glycol monoethyl ether (DPGME) was used in Example 4. ). 15 Table 1 Part Example 1 Example 2 Example 3 Example 4 Benzyl methacrylate (mol%) 35 30 41 41 Mercaptoacrylic acid 50 45 45 45 2-hydroxyethyl methacrylate (mol%) 8 - 7 7 Ethylhexyl methacrylate (mol%) 7 7 7 7 Methyl methacrylate (mol%) - 18 - - Molecular weight 30,000 28,000 28,000 35,000 Viscosity (cP) 15,000 12,000 12,000 > 20,000 Examples 5 to 9 Preparation of Negative Photoresist Composition Dispersing Conductive Micropowder and Dissolving Alkali According to the composition and content shown in Table 2 below, photopolymerization 19 1280077 initiator, anti-foaming agent and leveling agent were added to Example 1. The acrylate copolymer to 4 was then stirred at room temperature for 2 hours. Then, a photopolymerizable monomer was added thereto and stirred at room temperature for 4 hours to provide the dispersible conductive fine powder and the alkali-soluble negative photoresist composition. The thus obtained photoresist composition was filtered through a 4 Å sieve to remove impurities. Table 2 Composition Example 5 Example 6 Example 7 Example 8 Example 9 Acrylate Copolymer Example 1 - - 60.1 51.1 - Example 2 - - - Drink 60.1 Example 3 - 68.0 - - - Example 4 71.7 - - - - Photopolymerization Starting agent 1.6 2.0 2.8 2.8 2.8 Photopolymerizable monomer 14.3 28.1 30.8 40.9 30.8 Anti-foaming agent 3.7 0.1 4.0 3.1 4.0 Leveling agent 2 0.1 2.0 2.0 2.0 Stabilizer other compound 10 Slurry composition f ° Mixing 65 Ag/q Ag powder, 3% by weight inorganic binder, 0.05% by weight stabilizer, and 31.95 wt% dispersible conductive micropowder and alkali soluble negative photoresist composition, using a planetary blend The device was premixed and uniformly dispersed using a crucible roller mill to provide a silver paste composition. f Examples 11 to 14 5 According to Ag powder, the silver paste composition is evaluated. 20 1280077 Table 3 Part Example 11 Example 12 Example 13 Example 14 Ag powder 63 67 71 73 Inorganic binder 2.95 2.95 2.95 2.95 Stabilizer 0.05 0.05 0.05 0.05 Light Resistive composition 34 30 26 24 Development properties are well patterned (micron) 50 50 50 50 Thickness after development 8 9 11 11 Thickness after sintering 4 5 6 7 Viscosity (cP) 10,000 13,000 14,000 20,000
所使用的Ag粉末之平均粒子尺寸為1.2微米。使用石朋石夕 酸鉛熔接物作為無機黏合劑且使用亞磷酸作為安定劑。該 5 光阻組成物包括68%的丙烯酸共聚物、28.1%之光可聚合的 單體、2%的光聚合反應起始劑及1.9%的其它添加劑。The Ag powder used had an average particle size of 1.2 μm. A stone penite lead fusion is used as an inorganic binder and phosphorous acid is used as a stabilizer. The 5 photoresist composition comprised 68% of an acrylic copolymer, 28.1% of a photopolymerizable monomer, 2% of a photopolymerization initiator, and 1.9% of other additives.
以與實例10相同的方式來製備銀漿組成物,除了該Ag 粉末的含量如表3的實例11至14所定義。根據與Ag粉末含量 具相依性之銀漿組成物特徵來評估結果,該銀聚組成物具 10 有好的顯影性質及假塑性黏度性質。同樣地,燒結後之印 刷性質及圖案厚度好。 實例15至18 根據安定劑含量來評估該銀漿組忐物的 21 1280077 表4 部分 實例15 實例16 實例17 實例18 Ag粉末 67 67 67 67 無機黏合劑 2.95 2.95 2.95 2.95 安定劑 0 - - - 0.05 - - - - 0.3 - - - - 1 光阻組成物 30 30 30 30 顯影性質 好 好 好 正常 圖案形成 50 50 50 - 凝膠化 凝膠化 無 無 無 所使用的Ag粉末之平均粒子尺寸為1.2微米。使用硼矽 酸鉛熔接物作為該無機黏合劑且使用亞磷酸作為安定劑。 5 該光阻組成物包括68%的丙烯酸共聚物、28.1%之光可聚合 的單體、2%的光聚合反應起始劑及1.9%的其它添加劑。 與安定劑含量相依的銀漿組成物特徵之評估結果顯示 出雖然些微或無安定劑會相反地影響該組成物的儲存穩定 性,提供過量的安定劑會難以形成圖案。 10 實例19至22 根據安定劑之型式來評估該銀漿組成物的特徵 22 1280077 表5 部分 實例19 實例20 實例21 實例22 Ag粉末 67 67 67 67 無機黏合劑 2.95 2.95 2.95 2.95 安定劑 亞磷酸 0.05 - - - 磷酸 - 0.05 - - 抗壞血酸 - - 0.05 - 苯并三唑 - - - 0.05 光阻組成物 30 30 30 30 顯影性質 好 好 好 好 圖案形成 50 50 50 50 凝膠化 無 無 無 無A silver paste composition was prepared in the same manner as in Example 10 except that the content of the Ag powder was as defined in Examples 11 to 14 of Table 3. The results were evaluated based on the characteristics of the silver paste composition having a dependency on the Ag powder content, which has good developing properties and pseudoplastic viscosity properties. Similarly, the printed properties and pattern thickness after sintering are good. Examples 15 to 18 21 1280077 of the silver paste group were evaluated according to the stabilizer content. Table 4 Part Example 15 Example 16 Example 17 Example 18 Ag powder 67 67 67 67 Inorganic binder 2.95 2.95 2.95 2.95 Stabilizer 0 - - - 0.05 - - - - 0.3 - - - - 1 Photoresist composition 30 30 30 30 Good development properties Normal pattern formation 50 50 50 - Gelation gelation No or no Ag powder used has an average particle size of 1.2 μm . A lead borate lead fusion is used as the inorganic binder and phosphorous acid is used as a stabilizer. 5 The photoresist composition comprises 68% of an acrylic copolymer, 28.1% of a photopolymerizable monomer, 2% of a photopolymerization initiator, and 1.9% of other additives. The evaluation of the composition characteristics of the silver paste which is dependent on the stabilizer content shows that although slight or no stabilizer can adversely affect the storage stability of the composition, it is difficult to form a pattern by providing an excessive amount of stabilizer. 10 Examples 19 to 22 The characteristics of the silver paste composition were evaluated according to the type of stabilizer. 12 1280077 Table 5 Part Example 19 Example 20 Example 21 Example 22 Ag powder 67 67 67 67 Inorganic binder 2.95 2.95 2.95 2.95 Stabilizer phosphite 0.05 - - - Phosphoric acid - 0.05 - - Ascorbic acid - - 0.05 - Benzotriazole - - - 0.05 Photoresist composition 30 30 30 30 Good development properties Pattern formation 50 50 50 50 Gelation without or without
所使用的Ag粉末之平均粒子尺寸為1.2微米。使用硼矽 酸鉛熔接物作為無機黏合劑且使用編列在上述表5中之抗 5 氧化劑作為安定劑。該光阻組成物包括68%的丙烯酸共聚 物、28.1%之光可聚合的單體、2%的光聚合反應起始劑及 1.9%的其它添加劑。The Ag powder used had an average particle size of 1.2 μm. A lead borate lead fusion was used as the inorganic binder and the anti- 5 oxidizing agent listed in the above Table 5 was used as a stabilizer. The photoresist composition comprised 68% of an acrylic copolymer, 28.1% of a photopolymerizable monomer, 2% of a photopolymerization initiator, and 1.9% of other additives.
不管安定劑的型式,該銀漿組成物具有好的特徵。 實例23至26 10 根攄曝光量的改變來評估該銀漿組成物之特徵 23 1280077 表6 部分 實例23 實例24 實例25 實例26 Ag粉末 67 67 67 67 無機黏合劑 2.95 2.95 2.95 2.95 安定劑 0.05 0.05 0.05 0.05 光阻組成物 30 30 30 30 曝光量(毫焦耳) 300 0 - - - 400 - 0 - - 800 - 嫌 0 - 1,000 - - - 0 顯影性質 好 好 好 好 圖案形成 50 50 50 50 所使用的Ag粉末之平均粒子尺寸為丨.2微米。使用硼矽 酸錯熔接物作為無機黏合劑且使用亞填酸作為安定劑。該 5光阻組成物包括68%的丙烯酸共聚物、28.1%之光可聚合的 單體、2%的光聚合反應起始劑及19%的其它添加劑。 不管曝光量差異,本發明之銀漿組成物具有好的顯影 性質及圖案形成性。 實例27 10 微電極之形成 使用含有SUS 325篩孔遮罩的網版印刷機,將根據上述 實例的銀漿組成物印刷在該玻璃基材的表面上。在9〇t:的 對流烘箱中乾燥該印刷樣品2〇分鐘。將因此形成之經銀漿 塗佈的薄㈣露至-從曝光設備(其提供有紐)所發射出 15的光,以便在365奈米波長下進行圖案形成,且使用陶% 顯影劑在3代下顯影。以下列程式在電爐中燒結該經顯影 的微圖案:在室溫下開始燒結、維持在·。c下3〇分鐘以碳 24 ^28〇〇77 5 10 15 化有機材料及在550t下燒結30分鐘以形成微電極。 根據本發明之絲形成微電極的㈣組成物可應用在 低於的燒結製程t,因此合適於PDp製造。同樣地, 因為高黏度,該銀漿組成物合適於形.無法 #的 網版印刷肋形成之精相微電極,且具有料印刷性 質。此外,因為不分別地使用表面活性劑及有機溶劑 簡單及經濟地製備該銀漿組成物且其不會污染環境。 C圖式簡單說明】 兄 第1圖為在顯影由根據本發明的銀漿組成物戶 50微米圖案後的掃描式電子顯微照片(sem) · 斤形成之 第2圖為在顯影由根據本發明的銀漿組成物 5〇微米圖案後的SEM斷面; 所形成 第3圖為在燒結由根據本發明之銀漿組成物 5〇微米圖案後的SEM圖;及 所形成 第4圖為在燒結由根據本發明之銀聚級 50微米圖案後的SEM斷面。 【圖式之主要兀件代表符表】(無)Regardless of the type of stabilizer, the silver paste composition has good characteristics. Examples 23 to 26 10 Changes in the amount of exposure to the silver paste were evaluated 23 1280077 Table 6 Part Example 23 Example 24 Example 25 Example 26 Ag powder 67 67 67 67 Inorganic binder 2.95 2.95 2.95 2.95 Stabilizer 0.05 0.05 0.05 0.05 Photoresist composition 30 30 30 30 Exposure (mJ) 300 0 - - - 400 - 0 - - 800 - Odd 0 - 1,000 - - - 0 Developmental properties are well patterned 50 50 50 50 Ag used The average particle size of the powder was 丨.2 μm. Boron ytterbium acid mis-melting is used as the inorganic binder and sub-packaging is used as the stabilizer. The 5 photoresist composition comprised 68% of an acrylic copolymer, 28.1% of a photopolymerizable monomer, 2% of a photopolymerization initiator, and 19% of other additives. The silver paste composition of the present invention has good development properties and pattern formation regardless of the difference in exposure amount. Example 27 10 Formation of microelectrode A silver paste composition according to the above examples was printed on the surface of the glass substrate using a screen printing machine containing a SUS 325 mesh mask. The printed sample was dried in a 9 Torr: convection oven for 2 minutes. The thus formed silver paste-coated thin (four) is exposed to - 15 light emitted from an exposure apparatus (which is provided with a button) to perform pattern formation at a wavelength of 365 nm, and using a ceramic developer at 3 Developed under the generation. The developed micropattern was sintered in an electric furnace by the following procedure: sintering was started at room temperature and maintained. The organic material was carbonized at 3 Torr for 3 minutes and sintered at 550 Torr for 30 minutes to form a microelectrode. The (four) composition of the filament-forming microelectrode according to the present invention can be applied to a lower sintering process t, and thus is suitable for PDp fabrication. Similarly, because of the high viscosity, the silver paste composition is suitable for the fine phase microelectrode formed by the screen printing ribs, and has a print-printing property. Further, since the surfactant and the organic solvent are not separately used, the silver paste composition is simply and economically produced and it does not pollute the environment. Brief Description of Drawing C] Brother Figure 1 is a scanning electron micrograph (sem) after developing a 50 micron pattern of a silver paste composition according to the present invention. The second figure is formed in the development according to this SEM cross section of the inventive silver paste composition after 5 〇 micron pattern; FIG. 3 is an SEM image after sintering a 5 〇 micron pattern of the silver paste composition according to the present invention; and FIG. 4 is formed The SEM cross section after the silver poly-grade 50 micron pattern according to the present invention was sintered. [The main component of the schema represents the table] (none)
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CN100435366C (en) * | 2006-06-08 | 2008-11-19 | 天津大学 | Method for connecting high-power LEDs with nano-silver solder paste low-temperature sintering package |
US7655864B2 (en) | 2006-07-13 | 2010-02-02 | E.I Du Pont De Nemours And Company | Photosensitive conductive paste for electrode formation and electrode |
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US20120234383A1 (en) * | 2011-03-15 | 2012-09-20 | E.I.Du Pont De Nemours And Company | Conductive metal paste for a metal-wrap-through silicon solar cell |
US20120234384A1 (en) * | 2011-03-15 | 2012-09-20 | E.I. Du Pont Nemours And Company | Conductive metal paste for a metal-wrap-through silicon solar cell |
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