1271117 A7 B7 五、發明説明（i ) 【發明所屬之技術】 (請先閲讀背面之注意事項再填寫本頁) 本發明係有關有機電激發光顯示裝置之驅動方法及適 於有機電激發光顯示裝置等之顯示裝置之光電裝置之驅動 方法及光電裝置，及具備此等之光電裝置之電子機器者。 【以往之技術】 將有機材料做爲發光元件之發光材料使用之有機電激 發光顯示裝置係於廣視角性上優異，又，對於顯示裝置之 薄型化，輕量化、小型化及低消耗電力化等之市場的要求 ，可充分加’以對應之故，近來倍所囑目。 經濟部智慧財產局員工消費合作社印製 有機電激發光顯示裝置係與以往之液晶顯示裝置等不 同’需將發光元件之發光狀態以電流加以控制之故，做爲 其方法有傳導控制法（T,Shimoda，M.Kimura，et al.，Proc. Asia Display 98，217、M.Kimura，et al·，IEEE Trans. Elec· Dev· 46，2282( 1 999)、M Kimura，et al.，Proc· IDW 99，171、M Kimura，et al.，Dig. AM-LCD 2000，to Be published)。此方法 係將發光元件發光狀態經由電流値，以類比方式加以控制 者’具體而言，經由變化供予關於發光元件之驅動的驅動 電晶體之閘極電極的電位加以進行。但是使用電流特性易 於產生參差的薄膜電晶體時，各電晶體之電流特性的不同 會直接反映發光元件之發光狀態之不均勻性。 在此，又提出面積灰階法（M.Kimura，et al.，Proc.Euro Display ’99 Late-News Papers，71、日本特開平 9-2331707， M.Kimura，et al·，IDW 99，171、M Kimura，et al.，J. SID，to 本紙張尺度適用中國國家標準（cns ) A4規格（210x297公釐） 1271117 A7 B7 五、發明説明（2 ) be published、M.Kimura，et al.，Dig. AM-LCD 2000，to Be published )。面積灰階法係與上述傳導控制法不同，不使 用中間亮度之發光狀態，控制發光元件之發光狀態之方法 。即’將配置於矩陣狀之畫素分割成爲複數之副畫素，選 擇包含於此等之副晝素的發光元件之完全發光狀態或完全 非發光狀態之二狀態的任一者，變化複數副畫素中完全發 光狀態的副晝素之總面積，進行灰階顯示之方法。面積灰 階法中，無需設定對應於中間亮度之發光狀態的中間電流 値之故’可減低驅動發光元件之電晶體的電流特性之影響 ’達成畫素之均勻性之提升。但是，此方法中，灰階數會 由於副晝素數所限制，爲達成更多之灰階數時，需分割爲 更多晝素的副畫素之故，畫素構造會有複雜化之問題。 對此，又提出時間灰階法（M.Kimura，et al.，IDW 99, 171、M Kimura，et al·，AM-LCD 2000，to be published，Μ1271117 A7 B7 V. INSTRUCTION DESCRIPTION (i) [Technology to which the invention pertains] (Please read the precautions on the back side and then fill out this page.) The present invention relates to a driving method for an organic electroluminescence display device and to an organic electroluminescence display. A method of driving a photovoltaic device of a display device such as a device, an optoelectronic device, and an electronic device having such a photovoltaic device. [Prior Art] An organic electroluminescence display device using an organic material as a light-emitting material of a light-emitting device is excellent in wide viewing angle, and is thinner, lighter, smaller, and lower in power consumption of a display device. The requirements of the market, etc., can be fully added to the corresponding reason, and recently attracted attention. The Ministry of Economic Affairs, the Intellectual Property Office, and the employee-consumer cooperatives printed organic electro-optic display devices are different from the conventional liquid crystal display devices. 'The light-emitting state of the light-emitting elements needs to be controlled by current. As a method, there is a conduction control method (T , Shimoda, M. Kimura, et al., Proc. Asia Display 98, 217, M. Kimura, et al., IEEE Trans. Elec· Dev. 46, 2282 (1 999), M Kimura, et al., Proc · IDW 99, 171, M Kimura, et al., Dig. AM-LCD 2000, to Be published). This method is carried out by controlling the light-emitting state of the light-emitting element via the current 値 in an analogous manner. Specifically, the potential of the gate electrode of the driving transistor for driving the light-emitting element is changed. However, when the current characteristics are used to cause a staggered thin film transistor, the difference in current characteristics of the respective transistors directly reflects the unevenness of the light-emitting state of the light-emitting element. Here, an area gray scale method is also proposed (M. Kimura, et al., Proc. Euro Display '99 Late-News Papers, 71, Japanese Patent Laid-Open No. 9-2331707, M. Kimura, et al., IDW 99, 171 , M Kimura, et al., J. SID, to This paper scale applies to Chinese national standards (cns) A4 specifications (210x297 mm) 1271117 A7 B7 V. Description of invention (2) be published, M.Kimura, et al. , Dig. AM-LCD 2000, to Be published ). The area gray scale method is different from the above-described conduction control method in that it does not use the illumination state of the intermediate luminance and controls the illumination state of the light-emitting element. That is, 'the pixel arranged in the matrix is divided into a plurality of sub-pixels, and any one of the full light-emitting state or the completely non-light-emitting state of the light-emitting element including the secondary element is selected, and the plural number is changed. The method of displaying the gray scale in the total area of the sub-tendin in the full-luminous state of the pixel. In the area gray-scale method, it is not necessary to set the intermediate current 对应 corresponding to the light-emitting state of the intermediate luminance, which can reduce the influence of the current characteristics of the transistor for driving the light-emitting element, and achieve an improvement in the uniformity of the pixels. However, in this method, the number of gray scales is limited by the number of sub-prime primes. In order to achieve more gray scales, it is necessary to divide into more sub-pixels of pixels, and the pixel structure will be complicated. problem. In this regard, the time gray scale method is also proposed (M. Kimura, et al., IDW 99, 171, M Kimura, et al., AM-LCD 2000, to be published, Μ
Mizukami，et al.，Dig SID2000, 9 12、K. Inukai，et al·，Dig SID2000，924)。時間灰階法係變化1訊框之發光元件之完全 發光狀態的期間以得灰階之方法。因此，無需如面積灰階 法爲得多的灰階數設置多數之副畫素，亦可與面積灰階法 同時並用之故，被期待做爲進行數位灰階顯示之期望方法 〇 【發明欲解決之問題】 但是，「K. Inukai，et al·，Dig SID2000，924」所報告之 SES(Simultaneous-Erasing-Scan)之時間灰階法中，除 了掃瞄 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -----------黎-- (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 - 5- 1271117 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（3 ) 線，更需要重置線，會有發光面積縮小的問題。 在此本發明之第1目的係無需設置重置線，提供可得光 電裝置之灰階之方法，尤其是提供將有機電激發光顯示裝 置等之顯示裝置之灰階，經由時間灰階法獲得之方法。又 ’提供經由此驅動方法所驅動之光電裝置爲第2之目的者。 【爲解決課題之手段】 爲達成上述第1之目的，本發明之第1之光電裝置之 驅動方法，屬於對應於掃描線和資料線之交點，具備光電 元件，和驅動此光電元件之驅動電晶體，和控制此驅動電 晶體之開關電晶體，和將此驅動電晶體重置成非導通狀態 之重置電晶體的光電裝置之驅動方法中，其特徵係包含將 令述開關電晶體成爲開啓狀態之開啓信號，藉由前述掃 描線供予前述開關電晶體，對應於供予前述開啓信號期間 ，將選擇前述驅動電晶體之導通或非導通的設定信號，藉 由前述資料線及前述開關電晶體，供予前述驅動電晶體的 設定步驟，和將令前述重置電晶體成爲開啓狀態之開啓信 號’藉由前述掃描線供予前述重置電晶體，將前述驅動電 晶體重置爲非導通狀態的重置步驟。即，藉由同一之掃瞄 線’經由供予開關電晶體之開啓信號及重置電晶體之開啓 信號，不設置重置線地，可適切設定發光期間。在此，光 電元件及光電裝置係意味各別電氣性控制發光狀態或光學 特性之兀件及裝置。做爲光電裝置之具體例，例如可列舉 發光顯示裝置、液晶顯示裝置，或電泳顯示裝置等之顯示 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） "" -----------裝------訂----.---線 (請先閲讀背面之注意事項再填寫本頁) 1271117 Α7 Β7 五、發明説明（4 ) 裝置。 (請先閲讀背面之注意事項再填寫本頁) 然而，透過本說明書，將「將開啓信號藉由前述掃瞄 線，供予前述開關電晶體，將對應於此選擇前述驅動電晶 體之導通或非導通的設定信號，藉由前述資料線及前述開 關電晶體，供予前述驅動電晶體的步驟」定義爲「設定步 驟」，將「令前述重置電晶體成爲開啓狀態之開啓信號， 藉由前述掃瞄線，經由供予前述重置電晶體，將前述驅動 電晶體重置於非導通狀態的步驟」，定義爲「重置步驟」 〇 本發明之第2之光電裝置之驅動方法，於上述之光電裝 置之驅動方法，其中，前述光電裝置係更包含藉由前述驅 動電晶體，向光電元件供給電流之電源線，前述重置電晶 體之一端連接於此電源線爲特徵者。 經濟部智慧財產局員工消費合作社印製 本發明之第3之光電裝置之驅動方法，於上述之光電裝 置之驅動方法，其中，前述開關電晶體之導電型和前述重 置電晶體之導電型爲互異爲特徵者。此係意味例如開關電 晶體爲η型時，重置電晶體爲p型，開關電晶體爲p型之 時，重置電晶體爲η型。由此，經由適切選擇高電位及低 電位之信號，互補動作開關電晶體及重置電晶體。 本發明之第4之光電裝置之驅動方法係於上述光電裝置 之驅動方法，其中，前述開關電晶體、前述驅動電晶體、 及前述重置電晶體之導電型各爲η型、ρ型及ρ型爲特徵者 。即，經由供予高電位之掃瞄信號，可將開關電晶體成爲 開啓狀態，經由供予低電位之掃瞄信號，可將重置電晶體 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -7- 1271117 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（5 ) 成爲開啓狀態之故，可將開關電晶體及重置電晶體互補地 加以動作。 本發明之第5之光電裝置之驅動方法，於上述光電裝置 之驅動方法，令對應於前述開關電晶體成爲開啓狀態之開 啓信號的電壓値爲VS，和令對應於前述重置電晶體成爲開 啓狀態之開啓信號的電壓値爲VR，和令對應於前述開關電 晶體及前述重置電晶體皆成爲關閉狀態之關閉信號的電壓 値爲V0，則滿足VS〉VO>VR之關係式爲特徵者。 本發明之第6之光電裝置之驅動方法，於上述光電裝置 之驅動方法，滿足-VS4VR、及VO = OV(伏特）之關係式爲特 徵者。經由有關申請專利範圍第5項及第6項之光電裝置之 匿動方法，僅設定VS、V0及VR之三個電壓値，可進行開 關電晶體之開啓-關閉動作和重置電晶體之開啓-關閉動作。 本發明之第7之光電裝置之驅動方法，於上述光電裝置 之驅動方法，令前述開關電晶體成爲開啓狀態之期間係令 重置電晶體成爲關閉狀態，及令前述重置電晶體成爲開啓 狀態之期間係令開關電晶體成爲關閉狀態爲特徵者。經由 此’明確設定光電元件之狀態之選擇及保持該選擇之狀態 的期間。 本發明之第8之光電裝置之驅動方法，於上述光電裝置 之驅動方法，經由設定前述設定步驟和前述重置步驟間之 時間間隔以獲得灰階爲特徵者。即，設定步驟和重置步驟 間之時間間隔係對應於光電元件之選擇狀態之保持期間之 故’經由適切設定此時間間隔，而可得灰階。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） n 11 1 111 n 11 1 訂 111 n 备 (請先閲讀背面之注意事項再填寫本頁) -8- 1271117 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明説明（6 ) 本發明之第9之光電裝置之驅動方法，於上述光電裝置 之驅動方法，將前述設定步驟和前述重置步驟所規定之設 定-重置動作，經由複數次之重覆以獲得灰階爲特徵者。 於前述設定步驟，選擇光電元件之狀態，於重置步驟決定 該選擇之狀態之保持期間之故，經由複數次重覆此設定-重覆動作，可得多灰階。然而，透過本說明書，設定-重 置動作係定義前先定義之設定步驟和重置步驟所規定之動 作爲特徵者。 本發明之第10之光電裝置之驅動方法，於上述光電裝 置之驅動方法，複數次重覆之前述設定-重置動作之前述 設定步驟和前述重置步驟間之時間間隔各自爲不同是爲其 特徵者。 本發明之第11之光電裝置之驅動方法，於上述光電裝 置之驅動方法，複數次重覆之前述設定-重置動作之前述 設定步驟和前述重置步驟間之時間間隔皆爲不同，此等之 時間間隔之比以前述時間間隔中之最小之時間間隔爲基準 ，大約呈1:2:…：2n(n係1以上之整數）加以設定爲特徵者。例 如，前述時間間隔之比進行1:2之2次之設定-重置動作時， 可進行0、1、2、3之4灰階之顯示。另一方面，前述時間間 隔之比進行1 ·· 1之2次之設定-重置動作時，可進行0、1、2 之3灰階之顯示。即，於此光電裝置之匿動方法中，以設 定-重置動作之最小限之重覆，得最大限之灰階數。然而， 前述時間間隔之比不需正確爲1:2:... :2η(η係1以上之整數）， 正確成爲必要可承受之灰階精度即可。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） -----------装------1Τ------0 (請先閲讀背面之注意事項再填寫本頁) -9 - 1271117 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（7 ) 本發明之第12之光電裝置之驅動方法，於上述光電裝 置之驅動方法，前述設定信號係代替選擇前述驅動電晶體 之導通或非導通，爲決定前述驅動電晶體之導通狀態之信 號爲特徵。此係意味驅動電晶體之導通及非導通之2個狀態 以外，可選擇中間之導通狀態，設定信號經由供予做爲具 有連續性之値或離散性設定之3個以上之値的信號加以實現 。此驅動方法係爲實現多數之灰階數的有效方法。 本發明之第13之光電裝置之驅動方法，於上述光電裝 置之驅動方法，前述光電元件爲有機電激發光元件爲特徵 者。有機電激發光元件係將有機物質做爲電場發光材料加 以使用之發光元件。 本發明之第1之光電裝置，係經由上述之光電裝置之驅 動方法加以驅動爲特徵者。即，此光電裝置中，藉由同一 之掃瞄線，經由供予開關電晶體之開啓信號及重置電晶體 之開啓信號，無需設置重置線，可適切設定經由設定步驟 選擇之光電元件之狀態之保持期間。 本發明之第2之光電裝置係屬於對應於掃描線和資料線 之交點，具備光電元件，和驅動此光電元件之驅動電晶體 ，和控制此驅動電晶體之開關電晶體，和令此驅動電晶體 重置成爲非導通狀態之重置電晶體的光電裝置中’其特徵 係至少包含一個產生令前述開關電晶體及前述重置電晶體 成爲開啓狀態或關閉狀態之信號，對應於令前述開關電晶 體成爲開啓狀態之信號，產生設定前述驅動電晶體之信號 的驅動電路爲特徵者。在此，僅一個驅動電路’無需「將 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -----^ 批衣 訂 . 線 (請先閲讀背面之注意事項再填寫本頁) -10- 1271117 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（8 ) 前述開關電晶體及前述重置電晶體產生開啓狀態或關閉狀 態之信號，對應將前述開關電晶體成爲開啓狀態之信號， 產生設定前述驅動電晶體的信號」，以複數之驅動電路進 行亦可。 本發明之第3之光電裝置係屬於對應於掃描線和資料線 之交點，具備光電元件，和驅動此光電元件之驅動電晶體 ，和控制此驅動電晶體之開關電晶體，和令此驅動電晶體 重置成爲非導通狀態之重置電晶體的光電裝置中，其特徵 係包含將前述開關電晶體及前述重置電晶體成爲開啓狀態 或關閉狀態之信號供予前述掃描線之掃描線驅動器，‘和對 應前述掃描線驅動器之動作，將設定前述驅動電晶體之信 號，供予前述資料線之資料線驅動器者。 本發明之第4之光電裝置係屬於對應於掃描線和資料線 之交點，具備光電元件，和驅動此光電元件之驅動電晶體 ，和控制此驅動電晶體之開關電晶體，和令此驅動電晶體 重置成爲非導通狀態之重置電晶體的光電裝置中，其特徵 係爲進行設定前述光電元件之設定步驟之開啓信號，藉由 前述掃描線，供予前述開關電晶體，及爲進行重置前述光 電元件之重置步驟之開啓信號，藉由前述掃描線，供予前 述重置電晶體者。然而。在此「設定步驟」及「重置步驟 」之意義係與申請專利範圍第1項之設定步驟及1重瑙步驟 各別實質爲同樣之意義。 本發明之第5之光電裝置係於上述之光電裝置中，其特 徵係前述光電裝置係更包含藉由前述驅動電晶體，向光電 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -----------批衣------1T------^ (請先閲讀背面之注意事項再填寫本頁) -11 - 經濟部智慧財產局員工消費合作社印製 1271117 A7 B7 五、發明説明（9) 元件供給電流之電源線，前述重置電晶體之一端則連接於 此電源線者。爲此，本發明之第1〜第5之光電裝置係無需爲 進行時間灰階法之重置線。因此，具有可確保充分顯示面 積之優點。然而，更需要許多之灰階數時，於此光電裝置 之晝素內，設置副畫素等時，可與面積灰階法倂用。 本發明之第6之光電裝置係於上述光電裝置中，前述光 電元件爲有機電激發光元件爲特徵者。 本發明之第1之電子機器，安裝上述前述光電裝置所成 電子機器爲特徵者。 【發明之實施形態】 以下，說明本發明較佳之實施例。 有關本發明之實施例之基本電路係具備以攝氏600度以 下之低溫步驟所形成之多結晶矽薄膜電晶體（低溫poly-Si TFT)。低溫poly-Si TFT係可形成大面積便宜之玻璃基板上 ，於面板上內藏驅動電路之故，適於發光顯示裝置等之光 電裝置之製造。又，於小尺寸下電流供給能力爲高之故， 亦適用於高精細之電流發光顯示元件。然而，於低溫poly-Si TFT以外，使用非晶質矽薄膜電晶體（a-Si TFT)、矽基台 之電晶體或有機半導體，對於所謂經由有機薄膜電晶體驅 動之光電裝置，亦可適用本發明。 將有關本發明之實施例之光電裝置之畫素等價電路示 於圖1。於本實施例中，形成掃瞄線（S 1 )、資料線（D 1)及電 源線（V)，對應於掃瞄線（S1)和資料線（D1)之交點，具備光 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） I---1-----裝 訂 線 (請先閲讀背面之注意事項再填寫本頁) -12- 1271117 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（1()) 電元件（LI 1)，和驅動此光電元件（LI 1)之驅動電晶體（DT1 d ，和控制此驅動電晶體（DTI 1)之開關電晶體（ST11)，和重置 此驅動電晶體（DT11)之重置電晶體（RT 11)和電容器（C 11)的 光電裝置中，發光元件（LI 1)之一端係連接於陰極（A)。在此 ，驅動電晶體（D T 11)係p型之故，經由低電位之資料信號 ，選擇驅動電晶體（DT11)之導通，發光元件（L1)係成爲發光 狀態。另一方面，經由高電位之資料信號，選擇驅動電晶 體（DT 11)之非導通，發光元件係呈非發光狀態。然而，於 此圖所示之畫素等價電路中，開關電晶體（ST 11)、驅動電晶 體（DT 11)及重置電晶體（RT 11)係雖各爲η型、p型及p型， 但非限定於此。 圖2係顯示有關本發明之實施例之光電裝置之配線及畫 素配置圖。經由複數之掃瞄線（S 1、S2、...）及複數之資 料線（D 1、D2、…），畫素形成成爲矩陣狀，對應各掃瞄線和 資料線之交點，形成畫素。例如。對應於S1和D1之交點， 設置畫素11。畫素係包含如圖1所示之開關電晶體（ST 11)、 重置電晶體（RT11)、電容器（C11)、驅動電晶體（DT11)、及 發光元件（L 11)者爲基本的，但亦可於晝素內包含複數之副 畫素者亦可。然而，於此圖中，省略電源線（V)。 於圖3中，顯示具有有關於本發明之實施例圖1及圖2所 示之電路及畫素配置的光電裝置之驅動方法。於掃瞄線（S 1) 供給第1之掃瞄信號SS(S1)，於第2之掃瞄線（S2)供給第2之 掃瞄信號SS(S2)，於第3之掃瞄線（S3)供給第2之掃瞄信號 SS(S3)。於第1之資料線D1，供給第1之資料信號DS(D1)， 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 1· I n IJ1 n I n I 11 I n ϋ、1TI n ϋ n 矣 (請先閱讀背面之注意事項再填寫本頁) -13- 1271117 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明説明（11 ) 第2之資料線D2，供給第2之資料信號DS(D2)，第3之資料 線D3，供給第3之資料信號DS(D3)。 於本實施例中，開關電晶體（ST11)、驅動電晶體（DTI 1) 、及重置電晶體（RT11)係各爲η型、p型及p型之故，高電 位之掃瞄信號係做爲開關電晶體之開啓信號加以工作，令 開關電晶體成爲導通狀態，對應於此開關電晶體之開啓信 號，經由供予以斜線部所示之低電位之設定信號的設定步 驟，驅動電晶體成爲導通狀態，使發光元件發光。另一方 面，低電位之掃瞄信號係做爲重置電晶體之開啓信號加以 工作，經由此重置步驟，自電源線藉由重置電晶體，於Ρ 型之驅動電晶體供予高電位，驅動電晶體係成爲非導通狀 態，發光元件成爲非發光狀態。 發光元件之發光期間Ε 1、Ε 2及Ε 3係經由上述設定步驟 和重置步驟間之時間間隔加以規定。在此，發光期間Ε1、 Ε2及Ε3之長度比係雖成爲1:2:4地加以設定，由此可得0、1 、2、3、4、5、6、7之8灰階。然而，本實施例中，雖自設 定步驟和重置步驟間之時間間隔爲短的設定-重置動作順 序地加以進行，不一定需要最初進行時間間隔短的設定-重置動作，將時間間隔不同之設定-重置動作，對於以任 何順序進行，對應.使用狀況或配備。然而，對於信號，回 應電晶體或發光元件時，需要一些之時間，如圖所示，發 光期間之開始時間和終了時間會由各設定步驟之開始時間 和重置步驟之開始時間偏移。又，於此圖中，供予開關電 晶體之開啓信號的期間和供予設定信號的期間則完全重疊 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） I i I I I I I I I 批衣— — I I I I 訂— I I I I「-- (請先閲讀背面之注意事項再填寫本頁} -14- 經濟部智慧財產局員工消費合作社印製 1271117 A7 B7 五、發明説明（12) ’但也是有藉由使用狀況或配備，不一定需要來完全加以 重疊之場合。 圖4係顯示本發明之實施例之發光元件之電流特性圖。 橫軸係供予驅動電晶體之閘極電極的控制電位（Vsig)、縱軸 係有機電激元件之電流値（Ilep)。有機電激元件之電流値和 發光亮度係幾近成爲比例關係之故，縱軸係對應發光亮度 者。本實施例中，將有機電激元件控制成爲完全開啓之狀 態或完全關閉之狀態的2個狀態者爲佳。因此，於完全開啓 狀態或完全關閉狀態，變動電晶體特性時，電流値（Ilep)係 幾近爲一定，發光元件之電流値幾近不1變化，發光亮度幾 近成爲一定。由此，可實現畫質的均勻性。 圖5係顯示有關本發明之光電裝置之薄膜電晶體之製造 工程圖。首先，於玻璃基板1，經由使用SiH4的PECVD或 LPCVD，形成非晶質矽。經由準分子雷射等之雷射 照射，或固相成長，多結晶化非晶質矽，形成多結晶矽層 2(圖5(a))。圖案化多結晶矽層2之後，形成閘極絕緣膜3，更 形成閘極電極4(圖5(b))。將磷或硼等之不純物使用閘極電 極4，自我整合地植入多結晶矽層2，形成MOS電晶體5a及 5b ° 在此，5a及5b係各爲p型之驅動電晶體及n型之開關 電晶體，然而，於圖5中，省略重置電晶體。形成第1層間 絕緣膜6後，開孔連接孔，更形成源.極電極及汲極電極7(圖 5(c))。接著，形成第2層間絕緣膜8之後，開孔連接孔，更 形成ΙΤΟ所成畫素電極9(圖5(d))。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） . 裝 訂 線 (請先閲讀背面之注意事項再填寫本頁) -15- 經濟部智慧財產局員工消費合作社印製 1271117 A7 A7 B7 五、發明説明（13) 圖6係顯示有關本發明之實施例之光電裝置之畫素的製 造工程之圖。首先，形成密著層10，對應發光範圍形成開 口部。形成層間層11之後，形成開口部（圖6(a))。接著，經 由進行氧氣電漿或CF4電漿等之電漿處理’控制基板表面之 淫潤性。之後，將正孔植入層1 2及發光層13，經由旋轉塗 佈、擦式塗抹、噴墨步驟等之液相步驟，或濺鍍、蒸著等 之真空步驟加以形成，更且形成包含鋁等之金屬之陰極14 。最後，形成封閉層15。完成有機電激發光元件（圖6(b))。 密著層10之功能係提升基板和層間層11之密著性，又，可 得正確之發光面積。層間層11之功能係自閘極電極4或源極 電極及汲極電極7遠離陰極14，減低寄生容量，以及以液相 步驟形成正孔植入層12或發光層1 3時，控制表面之溼潤性 ，進行正確之圖案化。 接著，對於適用以上說明之光電裝置之電子機器的某 些事例加以說明。圖7係顯示適用前述之光電裝置之行動型 的個人電腦之構成的斜視圖。於此圖中，個人電腦11〇〇係 經由具備鍵盤1102之本體部1104，和顯示單元1106加以構成 ，此顯示單元1106具備前述之光電裝置100。 又，圖8係顯示將前述之光電裝置100適用於該顯示部 之攜帶電話機之構成的斜視圖。於此圖中，攜帶電話機 1200係複數之操作鈕1202之外，伴隨受話口 1 204、送話口 1 206，具備前述之光電裝置100。 又，圖9係顯示將前述之光電裝置100，適用於該觀景 器的數位照像機之構成的斜視圖。然而，此圖中，對於與 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） I 裝 訂 線 (請先閲讀背面之注意事項再填寫本頁) -16- 1271117 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（14) 外部機器之連接簡單地加以顯示。在此，通常之照像機係 對於經由被攝體之光像，感光軟片，數位照像機1300係將 被攝體之光像，經由CCD等攝像元件，光電變換生成丰攝 像信號。於數位照像機1300之殼體1 302之背面，設置前述之 光電裝置100，根據CDD所成攝像信號，進行顯示之構成， 光電裝置100係做爲顯示被攝體之觀景器加以工作。又，殼 體1302之觀察側（於圖中爲背面側）中，設置包含光學透鏡或 CCD等之受光單元1304。 攝影者確認顯示於光電裝置1 00之被攝體像，按下快門 鈕1 306時，該時點之CCD之攝像信號傳送·收容於電路基 板1 308之記憶體。又，於此數位照像機1300中，於殼體1302 之側面，設置視訊信號輸出端子1312，和資料通訊用之輸 出入端子1 3 14。然後，如圖所示，於前者之視訊信號輸出 端子1312，對應電視監視器143 0之需要加以連接，又，後者 之資料通訊用之輸出入端子13 14對應個人電腦1440之需要加 以連接。更且，經由所定之操作，收容於電路基板1308之 攝像信號，輸出至電視監視器1430或個人電腦1440加以構成 〇 然而，做爲適用本發明之光電裝置100之電子機器，係 除圖7之個人電腦，或圖8之攜帶電話，圖9之數位相機之外 ，可列舉液晶電視，或觀景型、監視直視型之攝錄影機， 汽車導航裝置、呼叫器、電子筆記本、計算機、文字處理 器、電視電話、POS終端、具備觸控面板之機器等。然後 ，此等之各種電子機器之顯示部，當然可適用前述之光電 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -----------批衣------1T------^ (請先閲讀背面之注意事項再填寫本頁) -17- A7 B7 15 1271117 五、發明説明（ 裝置100。 【圖1】 顯示有關本發明之實施例之光電裝置之畫素等價電路 圖。 【圖2】 顯不有關本發明之實施例之光電裝置之畫素配置圖。 【圖3】 顯示有關本發明之實施例之光電裝置之驅動方法置圖 〇 【圖4】 顯示有關本發明之實施例之光電元件之電流特性圖。 【圖5】 顯示有關本發明之實施例之光電裝置之製造工程$ _ 部分圖。 【圖6】 顯示有關本發明之實施例之光電裝置之製造工程& _ 部分圖。 【圖7】 顯示將本發明之一實施例所成光電裝置，適用於$ ^ 型之個人電腦時之一例圖。 【圖8】 顯示將本發明之一實施例所成光電裝置，適用於^ _ 電話機之顯示部時之一例圖。 【圖9】 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -----------批衣------II-------^ (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 18- 經濟部智慧財產局員工消費合作社印製 1271117 Α7 Β7 五、發明説明（16) 顯示將本發明之一實施例所成光電裝置，適用於觀景 部分之數位相機之斜視圖之圖。 【符號之說明】 V 電源線 A 陰極 L11發光元件 DT11 驅動電晶體 ST11 開關電晶體 RT11 _重置電晶體 C11電容器 S 1 第1之掃瞄線 S 2 第2之掃猫線 S3 第3之掃瞄線 D1 第1之資料線 D2 第2之資料線 D3 第3之資料線 SS(S1) 第1之掃瞄線之掃瞄信號（第1之掃瞄信號） SS(S2) 第2之掃瞄線之掃瞄信號（第2之掃瞄信號） SS(S3) 第3之掃瞄線之掃瞄信號（第3之掃瞄信號） DS(D1) 第1之資料線之資料信號（第1之資料信號） DS(D2) 第2之資料線之資料信號（第2之資料信號） DS(D3) 第3之資料線之資料信號（第3之資料信號）Mizukami, et al., Dig SID2000, 9 12, K. Inukai, et al., Dig SID 2000, 924). The time gray scale method changes the period of the complete light-emitting state of the light-emitting element of the frame to the gray scale. Therefore, it is not necessary to set a large number of sub-pixels such as the gray scale method of the area gray scale method, and it can also be used together with the area gray scale method, and is expected to be a desired method for performing digital gray scale display. Solving the problem] However, the time-scale gray scale method of SES (Simultaneous-Erasing-Scan) reported by K. Inukai, et al., Dig SID2000, 924 applies the Chinese national standard (CNS) in addition to the scanning paper scale. A4 size (210X297 mm) -----------Li-- (Please read the notes on the back and fill out this page) Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperatives - 5- 1271117 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (3) line, more need to reset the line, there will be a problem of reduced light-emitting area. The first object of the present invention is to provide a method for obtaining a gray scale of an optoelectronic device without providing a reset line, and more particularly to provide a gray scale of a display device such as an organic electroluminescence display device, which is obtained by a time gray scale method. The method. Further, the photovoltaic device driven by this driving method is provided for the second purpose. [Means for Solving the Problem] In order to achieve the above first object, the first method of driving a photovoltaic device according to the present invention belongs to an intersection of a scanning line and a data line, and includes a photovoltaic element and a driving power for driving the photovoltaic element. a crystal, and a switching transistor for controlling the driving transistor, and a driving method of the photovoltaic device for resetting the driving transistor to a non-conducting resetting transistor, characterized in that the switching transistor is turned on The opening signal is supplied to the switching transistor by the scanning line, and the setting signal for turning on or off of the driving transistor is selected corresponding to the period during which the opening signal is supplied, by using the data line and the switching transistor a setting step of supplying the driving transistor, and an opening signal for turning the reset transistor into an on state, wherein the driving transistor is reset to a non-conducting state by supplying the resetting transistor to the resetting transistor. Reset step. That is, by the same scanning line ' via the turn-on signal of the supply switching transistor and the turn-on signal of the reset transistor, the light-emitting period can be appropriately set without providing the reset line. Here, the photovoltaic element and the photovoltaic device mean components and devices that individually electrically control the light-emitting state or the optical characteristics. Specific examples of the photovoltaic device include, for example, a light-emitting display device, a liquid crystal display device, or an electrophoretic display device. The display paper size is applicable to the Chinese National Standard (CNS) A4 specification (210×297 mm) "" --- --------Install ------ order----.--- line (please read the note on the back and then fill out this page) 1271117 Α7 Β7 5, invention description (4) device. (Please read the precautions on the back and fill out this page.) However, through this manual, "the turn-on signal is supplied to the above-mentioned switching transistor by the above-mentioned scanning line, and the driving of the above-mentioned driving transistor will be selected accordingly. The non-conducting setting signal, the step of supplying the driving transistor by the data line and the switching transistor, is defined as a "setting step", and the "opening signal for turning the reset transistor into an on state" is performed by The step of resetting the driving transistor to the non-conducting state by supplying the resetting transistor, and defining the "reset step" as the driving method of the second photovoltaic device of the present invention, In the above method for driving a photovoltaic device, the photovoltaic device further includes a power supply line for supplying a current to the photovoltaic element by the drive transistor, and one of the reset transistors is connected to the power supply line. The driving method of the photoelectric device according to the third aspect of the present invention, wherein the conductive type of the switching transistor and the conductive type of the resetting transistor are Different from each other. This means that, for example, when the switching transistor is of the n-type, the reset transistor is p-type, and when the switching transistor is p-type, the reset transistor is of the n-type. Thereby, the switching transistor and the resetting transistor are complementarily operated by appropriately selecting signals of high potential and low potential. A method of driving a photovoltaic device according to a fourth aspect of the present invention is the method for driving the photovoltaic device, wherein the switching transistor, the driving transistor, and the reset transistor each have an n-type, a p-type, and a p-type The type is a feature. That is, the switching transistor can be turned on by supplying a high-potential scanning signal, and the resetting transistor paper size can be applied to the Chinese National Standard (CNS) Α4 specification by supplying a scanning signal with a low potential. 210X297 mm) -7- 1271117 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau Employees Consumption Cooperatives Printing V. Inventions (5) When the state is turned on, the switching transistor and the reset transistor can be complementarily operated. According to a fifth aspect of the present invention, in the method of driving the photovoltaic device, the voltage 値 corresponding to the turn-on signal of the switching transistor being turned on is VS, and the reset transistor is turned on. The voltage 値 of the on signal of the state is VR, and the voltage 値 corresponding to the off signal corresponding to the switching transistor and the reset transistor being turned off is V0, and the relationship of VS>VO>VR is satisfied. . A method of driving a photovoltaic device according to a sixth aspect of the present invention is characterized in that the relationship between -VS4VR and VO = OV (volts) is satisfied by the method of driving the photovoltaic device. The three voltages of VS, V0 and VR can be set only by the method of hiding the photoelectric devices of the fifth and sixth aspects of the patent application range, and the switching transistor can be turned on and off and the reset transistor can be turned on. - Turn off the action. In a method of driving a photovoltaic device according to a seventh aspect of the present invention, in the driving method of the photovoltaic device, the reset transistor is turned off during a period in which the switching transistor is turned on, and the reset transistor is turned on. During this period, the switch transistor is turned off. Through this, the selection of the state of the photovoltaic element and the period in which the state of the selection is maintained are clearly set. A method of driving a photovoltaic device according to a eighth aspect of the present invention, characterized in that the method for driving the photovoltaic device is characterized by setting a time interval between the setting step and the resetting step to obtain a gray scale. That is, the time interval between the setting step and the resetting step corresponds to the holding period of the selected state of the photovoltaic element. By setting this time interval appropriately, a gray scale can be obtained. This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) n 11 1 111 n 11 1 Book 111 n (Please read the note on the back and fill out this page) -8- 1271117 Α7 Β7 Ministry of Economics The property bureau employee consumption cooperative printing 5, the invention description (6) The driving method of the illuminating device of the ninth aspect of the invention, in the driving method of the photoelectric device, the setting step and the setting of the resetting step are reset-reset The action is characterized by a plurality of repetitions to obtain a gray scale. In the setting step, the state of the photoelectric element is selected, and in the resetting step, the holding period of the selected state is determined, and the setting-repetitive operation is repeated a plurality of times to make the grayscale. However, through this specification, the set-reset action defines the action defined by the previously defined set and reset steps. According to a tenth aspect of the present invention, in the driving method of the photovoltaic device, the time interval between the setting step of the setting-resetting operation and the resetting step of the plurality of repetitions is different Feature. According to a tenth aspect of the present invention, in the driving method of the photovoltaic device, the time interval between the setting step and the resetting step of the setting-resetting operation of the plurality of repetitions are different, and the like The ratio of the time intervals is set to be approximately 1:2:...:2n (n is an integer of 1 or more) based on the minimum time interval among the aforementioned time intervals. For example, when the ratio of the aforementioned time interval is set to 2 times of the 1:2 reset operation, the display of the gray scales of 0, 1, 2, and 3 can be performed. On the other hand, when the ratio of the time interval is set to the reset operation of 1··1, the display of the gray scales of 0, 1, and 2 can be performed. That is, in the method of hiding the photovoltaic device, the maximum number of gray levels is obtained by repeating the minimum of the set-reset operation. However, the ratio of the aforementioned time intervals does not need to be exactly 1:2:... :2η (the η is an integer of 1 or more), and it is necessary to correctly achieve the gray scale accuracy that can be withstood. This paper scale applies to the Chinese National Standard (CNS) Α4 specification (210Χ297 mm) -----------装------1Τ------0 (Please read the back of the note first) </ STRONG> </ STRONG> </ STRONG> </ STRONG> </ STRONG> </ STRONG> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> The setting signal is instead of selecting the conduction or non-conduction of the driving transistor, and is a signal for determining the conduction state of the driving transistor. This means that in addition to the two states of the driving transistor being turned on and off, the intermediate conduction state can be selected, and the setting signal is realized by supplying three or more signals having continuity or discreteness setting. . This driving method is an effective way to achieve a majority of gray levels. A method of driving a photovoltaic device according to a thirteenth aspect of the present invention, characterized in that in the method of driving the photovoltaic device, the photovoltaic element is an organic electroluminescence device. The organic electroluminescent device is a light-emitting element in which an organic substance is used as an electric field luminescent material. The photoelectric device of the first aspect of the present invention is characterized in that it is driven by the above-described driving method of the photovoltaic device. That is, in the photovoltaic device, by the same scanning line, the opening signal of the switching transistor is turned on and the turn-on signal of the reset transistor is eliminated, and the resetting line is not required, and the photoelectric element selected through the setting step can be appropriately set. The period of retention of the state. The photoelectric device of the second aspect of the present invention belongs to an intersection corresponding to a scanning line and a data line, and includes a photovoltaic element, a driving transistor for driving the photoelectric element, and a switching transistor for controlling the driving transistor, and driving the driving The photoelectric device in which the crystal is reset to a non-conducting reset transistor is characterized in that it includes at least one signal for causing the switching transistor and the reset transistor to be turned on or off, corresponding to the switching power The crystal is in a state of being turned on, and a drive circuit for setting a signal for the drive transistor is generated. Here, only one drive circuit 'does not need to apply the paper size to the Chinese National Standard (CNS) A4 specification (210X297 mm) -----^ Batch clothing. Line (please read the notes on the back and fill in the form) Page) -10- 1271117 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (8) The above switching transistor and the aforementioned reset transistor generate a signal of an open state or a closed state, corresponding to the aforementioned switching transistor The signal of the ON state is generated, and the signal for setting the drive transistor is generated, and may be performed by a plurality of drive circuits. The photoelectric device of the third aspect of the present invention belongs to an intersection corresponding to a scanning line and a data line, and includes a photovoltaic element, a driving transistor for driving the photoelectric element, and a switching transistor for controlling the driving transistor, and driving the driving In an optoelectronic device in which a crystal is reset to a non-conducting reset transistor, the feature includes a scan line driver for supplying a signal of the switching transistor and the reset transistor to an on state or a closed state to the scan line. And corresponding to the operation of the scanning line driver, the signal of the driving transistor is set to be supplied to the data line driver of the data line. The photoelectric device of the fourth aspect of the present invention belongs to an intersection corresponding to a scanning line and a data line, and includes a photovoltaic element, a driving transistor for driving the photoelectric element, and a switching transistor for controlling the driving transistor, and driving the driving In an optoelectronic device in which a crystal is reset to a non-conducting reset transistor, it is characterized in that an on signal for setting a step of the photosensor is set, and the switching transistor is supplied to the switching transistor, and the weight is performed. The turn-on signal of the resetting step of the photo-electric element is supplied to the reset transistor by the scan line. however. The meanings of the "setting step" and "reset step" are the same as the setting steps and the one-step step in the first paragraph of the patent application. The photoelectric device of the fifth aspect of the present invention is characterized in that the photovoltaic device further comprises the Chinese National Standard (CNS) A4 specification (210X297) for the photoelectric paper scale by the driving transistor. PCT) -----------Approving ------1T------^ (Please read the notes on the back and fill out this page) -11 - Ministry of Economic Affairs Intellectual Property Bureau Employee Consumption Cooperative Printed 1271117 A7 B7 V. Invention Description (9) The power supply line for the component supply current, one of the aforementioned reset transistors is connected to this power supply line. For this reason, the photoelectric devices of the first to fifth aspects of the present invention are not required to be reset lines for the time gray scale method. Therefore, it has the advantage of ensuring a sufficient display area. However, when a large number of gray scales are required, when a sub-pixel or the like is provided in the pixel of the photovoltaic device, the area gray scale method can be used. A photovoltaic device according to a sixth aspect of the present invention is characterized in that the photovoltaic device is an organic electroluminescence device. The electronic device according to the first aspect of the present invention is characterized in that the electronic device formed by the above-described photovoltaic device is mounted. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, preferred embodiments of the present invention will be described. The basic circuit of the embodiment of the present invention is provided with a polycrystalline ruthenium film transistor (low temperature poly-Si TFT) formed by a low temperature step of 600 degrees Celsius or less. The low-temperature poly-Si TFT system can form a large-area inexpensive glass substrate and has a built-in driving circuit on the panel, and is suitable for the manufacture of a photovoltaic device such as a light-emitting display device. Moreover, the current supply capability is high in a small size, and is also applicable to a high-precision current light-emitting display element. However, in addition to the low-temperature poly-Si TFT, an amorphous germanium thin film transistor (a-Si TFT), a germanium-based transistor or an organic semiconductor can be used for the so-called photovoltaic device driven by the organic thin film transistor. this invention. A pixel equivalent circuit of the photovoltaic device according to the embodiment of the present invention is shown in Fig. 1. In this embodiment, the scan line (S 1 ), the data line (D 1), and the power line (V) are formed, corresponding to the intersection of the scan line (S1) and the data line (D1), and the photo paper is provided. The scale applies to China National Standard (CNS) A4 specification (210X297 mm) I---1----- gutter (please read the note on the back and fill out this page) -12- 1271117 A7 B7 Ministry of Economics Intellectual Property Bureau employee consumption cooperative printing 5, invention description (1 ()) electrical component (LI 1), and the driving transistor (DT1 d driving the photovoltaic component (LI 1), and controlling the driving transistor (DTI 1) In the photovoltaic device (ST11), and in the photovoltaic device in which the reset transistor (RT 11) and the capacitor (C 11) of the drive transistor (DT11) are reset, one end of the light-emitting element (LI 1) is connected to the cathode ( A) Here, the driving transistor (DT 11) is p-type, and the driving transistor (DT11) is turned on via the low-potential data signal, and the light-emitting element (L1) is in a light-emitting state. The non-conduction of the driving transistor (DT 11) is selected via the high-potential data signal, and the light-emitting element is in a non-light-emitting state. However, in the pixel equivalent circuit shown in the figure, the switching transistor (ST 11), the driving transistor (DT 11), and the reset transistor (RT 11) are each of an n-type, a p-type, and a p-type. Fig. 2 is a view showing a wiring and a pixel arrangement diagram of a photovoltaic device according to an embodiment of the present invention. A plurality of scanning lines (S1, S2, ...) and a plurality of data lines are provided. (D1, D2, ...), the pixels are formed into a matrix shape, and a pixel is formed corresponding to the intersection of each scan line and the data line. For example, corresponding to the intersection of S1 and D1, the pixel 11 is set. As shown in Figure 1, the switching transistor (ST 11), the reset transistor (RT11), the capacitor (C11), the driving transistor (DT11), and the light-emitting device (L 11) are basic, but It is also possible to include a plurality of sub-pixels in the pixel. However, in this figure, the power line (V) is omitted. In Fig. 3, the circuit shown in Figs. 1 and 2 with respect to the embodiment of the present invention is shown. And a driving method of the photoelectric device in which the pixel is arranged. The first scanning signal SS (S1) is supplied to the scanning line (S1), and is supplied to the second scanning line (S2). The scan signal SS (S2) of 2 is supplied with the second scan signal SS (S3) on the third scan line (S3). The first data signal DS (D1) is supplied to the first data line D1. , This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 1· I n IJ1 n I n I 11 I n ϋ, 1TI n ϋ n 矣 (please read the notes on the back and fill in the form) Page) -13- 1271117 Α7 Β7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (11) The second data line D2, the second data signal DS (D2), the third data line D3, The third data signal DS (D3) is supplied. In the present embodiment, the switching transistor (ST11), the driving transistor (DTI 1), and the reset transistor (RT11) are each of the n-type, p-type, and p-type, and the high-potential scanning signal system Actuating as the turn-on signal of the switching transistor, the switching transistor is turned on, and the driving transistor is driven by the setting step of the setting signal of the low potential indicated by the oblique line portion corresponding to the turn-on signal of the switching transistor. In the on state, the light emitting element emits light. On the other hand, the low-potential scan signal is operated as a turn-on signal for resetting the transistor, and the resetting step is performed by resetting the transistor from the power supply line to supply a high potential to the driving transistor of the Ρ type. The driving electro-crystal system is in a non-conduction state, and the light-emitting element is in a non-light-emitting state. The light-emitting periods Ε 1, Ε 2 and Ε 3 of the light-emitting elements are defined by the time interval between the above-described setting step and reset step. Here, the length ratios of the light-emitting periods Ε1, Ε2, and Ε3 are set to 1:2:4, whereby eight gray scales of 0, 1, 2, 3, 4, 5, 6, and 7 can be obtained. However, in the present embodiment, although the setting-reset operation in which the time interval between the setting step and the resetting step is short is sequentially performed, it is not necessary to initially perform the setting-resetting operation with a short time interval, and the time interval is set. Different settings - reset actions, for any order, corresponding to the condition or equipment. However, for the signal, it takes some time to respond to the transistor or the light-emitting element. As shown, the start time and the end time of the light-emitting period are shifted by the start time of each setting step and the start time of the reset step. Moreover, in this figure, the period during which the turn-on signal is supplied to the switching transistor and the period during which the set signal is supplied are completely overlapped. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210×297 mm) I i IIIIIII — — IIII 订 — IIII “-- (Please read the note on the back and fill out this page again) -14- Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 1271117 A7 B7 V. Invention Description (12) 'But it is also borrowed Fig. 4 is a graph showing the current characteristics of the light-emitting element of the embodiment of the present invention. The horizontal axis is the control potential of the gate electrode for driving the transistor (Vsig). The vertical axis is the current 値 (Ilep) of the organic electro-active element. The current 値 and the illuminance of the organic galvanic element are approximately proportional, and the vertical axis corresponds to the illuminating brightness. In this embodiment, there will be It is preferable that the electromechanical element is controlled to be in a fully open state or a fully closed state. Therefore, the transistor characteristics are changed in a fully open state or a fully closed state. The current 値 (Ilep) system is almost constant, and the current 値 of the illuminating element is not nearly changed, and the illuminating brightness is almost constant. Thereby, the uniformity of image quality can be achieved. Fig. 5 shows the photoelectricity related to the present invention. A manufacturing process of a thin film transistor of a device. First, an amorphous germanium is formed on a glass substrate 1 by PECVD or LPCVD using SiH4. Laser irradiation by a pseudo-electron laser or the like, or solid phase growth, polycrystallization The amorphous germanium forms a polycrystalline germanium layer 2 (Fig. 5(a)). After patterning the polycrystalline germanium layer 2, the gate insulating film 3 is formed, and the gate electrode 4 is further formed (Fig. 5(b)). Impurities such as phosphorus or boron are implanted into the polycrystalline germanium layer 2 by self-integration using the gate electrode 4 to form MOS transistors 5a and 5b. Here, 5a and 5b are p-type driving transistors and n-type The transistor is switched, however, the reset transistor is omitted in Fig. 5. After the first interlayer insulating film 6 is formed, the hole is connected to the hole, and the source electrode and the drain electrode 7 are further formed (Fig. 5(c)). Next, after the second interlayer insulating film 8 is formed, the hole is connected to the hole, and the pixel electrode 9 is formed (Fig. 5 (d)). The paper scale applies to the Chinese National Standard (CNS) Α4 specification (210X297 mm). Gutter (please read the note on the back and fill out this page) -15- Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 1271117 A7 A7 B7 Five BRIEF DESCRIPTION OF THE DRAWINGS (13) Fig. 6 is a view showing a manufacturing process of a pixel of an optoelectronic device according to an embodiment of the present invention. First, an adhesion layer 10 is formed, and an opening portion is formed corresponding to a light-emitting range. After the interlayer layer 11 is formed, it is formed. The opening portion (Fig. 6(a)). Next, the lubricity of the surface of the substrate is controlled by performing plasma treatment such as oxygen plasma or CF4 plasma. Thereafter, the positive hole implant layer 12 and the light-emitting layer 13 are formed by a liquid phase step such as spin coating, wiping, or an ink jetting step, or a vacuum step such as sputtering or evaporation, and further include A cathode of a metal such as aluminum 14 . Finally, a sealing layer 15 is formed. The organic electroluminescent element is completed (Fig. 6(b)). The function of the adhesion layer 10 is to improve the adhesion between the substrate and the interlayer 11, and to obtain a correct light-emitting area. The function of the interlayer layer 11 is to reduce the parasitic capacitance from the gate electrode 4 or the source electrode and the drain electrode 7 away from the cathode 14, and to form the positive hole implant layer 12 or the light-emitting layer 13 in the liquid phase step, the control surface Wetness, correct patterning. Next, some examples of an electronic device to which the photovoltaic device described above is applied will be described. Fig. 7 is a perspective view showing the configuration of a mobile type personal computer to which the above-described photovoltaic device is applied. In the figure, the personal computer 11 is configured by a main body 1104 having a keyboard 1102 and a display unit 1106. The display unit 1106 includes the above-described photovoltaic device 100. Further, Fig. 8 is a perspective view showing a configuration of a portable telephone to which the photovoltaic device 100 described above is applied to the display unit. In the figure, the portable telephone 1200 is provided with a plurality of operation buttons 1202, and the above-mentioned photoelectric device 100 is provided in association with the telephone port 1 204 and the mouthpiece 1206. Further, Fig. 9 is a perspective view showing a configuration of a digital camera to which the photovoltaic device 100 described above is applied to the viewfinder. However, in this figure, the Chinese National Standard (CNS) A4 specification (210X297 mm) I gutter is applied to the paper scale (please read the note on the back and fill out this page) -16- 1271117 A7 B7 Ministry of Economics Property Bureau employee consumption cooperative printing 5, invention description (14) The connection of external machines is simply displayed. Here, in the case of a normal camera, the digital camera 1300 transmits a light image of the subject through a light image of the subject, and photoelectrically converts the image of the subject to a high-resolution image signal via an imaging element such as a CCD. The photoelectric device 100 is disposed on the back surface of the casing 1 302 of the digital camera 1300, and is configured to display according to an imaging signal formed by the CDD. The photoelectric device 100 operates as a viewfinder for displaying a subject. Further, a light receiving unit 1304 including an optical lens or a CCD is provided in the observation side (back side in the figure) of the casing 1302. When the photographer confirms the subject image displayed on the photoelectric device 100 and presses the shutter button 1 306, the imaging signal of the CCD at that time is transmitted and stored in the memory of the circuit board 1308. Further, in the digital camera 1300, a video signal output terminal 1312 and an input/output terminal 1314 for data communication are provided on the side surface of the casing 1302. Then, as shown in the figure, the video signal output terminal 1312 of the former is connected to the television monitor 143 0, and the input/output terminal 13 14 for data communication of the latter is connected to the personal computer 1440. Further, the image pickup signal stored in the circuit board 1308 is output to the television monitor 1430 or the personal computer 1440 via a predetermined operation, and is an electronic device to which the photovoltaic device 100 of the present invention is applied, except for FIG. Personal computer, or mobile phone of Figure 8, in addition to the digital camera of Figure 9, can be listed LCD TV, or viewing type, surveillance direct-view video camera, car navigation device, pager, electronic notebook, computer, text Processor, videophone, POS terminal, machine with touch panel, etc. Then, the display parts of these various electronic devices can of course be applied to the above-mentioned photoelectric paper scale applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -----------Leasing- -----1T------^ (Please read the precautions on the back and fill out this page) -17- A7 B7 15 1271117 V. Description of the invention (device 100. [Fig. 1] shows the invention Fig. 2 is a diagram showing a pixel arrangement of an optoelectronic device according to an embodiment of the present invention. [Fig. 3] A method of driving a photovoltaic device according to an embodiment of the present invention Fig. 4 is a view showing a current characteristic of a photovoltaic element according to an embodiment of the present invention. Fig. 5 is a partial view showing a manufacturing process of a photovoltaic device according to an embodiment of the present invention. [Fig. 6] Fig. 7 is a view showing an example of a photovoltaic device according to an embodiment of the present invention, which is applied to a personal computer of the $^ type. </ RTI> showing a photovoltaic device according to an embodiment of the present invention Applicable to the example of ^ _ telephone display section [Figure 9] This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -----------Leverage-- ----II-------^ (Please read the note on the back and then fill out this page) Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 18- Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 1271117 Α7 Β7 V. Inventive Description (16) A perspective view showing a photoelectric device according to an embodiment of the present invention applied to a digital camera of a viewing portion. [Description of Symbols] V Power Supply Line A Cathode L11 Light-emitting Element DT11 Drive Transistor ST11 Switching transistor RT11 _Reset transistor C11 capacitor S 1 First scan line S 2 Second sweep cat line S3 3rd scan line D1 1st data line D2 2nd data line D3 The third data line SS (S1) The scan signal of the first scan line (the first scan signal) SS (S2) The scan signal of the second scan line (the second scan signal) SS (S3) Scan signal of the 3rd scan line (Scan signal of 3rd) DS(D1) Data signal of the 1st data line (1st data signal) DS (D2) of the second data line of the data signals (data signal of a second) DS (D3) of the third data line of the data signals (data signal of 3)
El(ll) 畫素11之第1之發光期間 本纸張尺度適用中國國家標準（CNS ) A4規格（21〇ϋ公釐） — .— — —^ — — —— — — ^^— — 11 訂— I I I , I 線 (請先閲讀背面之注意事項再填寫本頁) 1271117 A7 B7 五、發明説明（17) E2(l 1) 室 旦 素 11之 第 2之 發 光 期 間 E3(l 1) 奎 旦 素 11之 第 3之 發 光 期 間 El(21) 童 旦 素 21之 第 1之 發 光 期 間 E2(21) 室 旦 素 21之 第 2之 發 光 期 間 E3(21) 畫 素 21之 第 3之 發 光 期 間 El(31) 童 旦 素 31之 第 1之 發 光 期 間 E2(31) 室 旦 素 31之 第 2之 發 光 期 間 E3(31) 畫 素 31之 第 3之 發 光 期 間 Vsig控制電 位 Ilep電流値 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1 玻璃基板 2 多結晶矽層 3 閘極絕緣膜 4 _極電極 5a p型電晶體（MOS電晶體） 5b η型電晶體（MOS電晶體） 6 第1層間絕緣膜 7 源極電極及汲極電極 8 第2層間絕緣膜 9 晝素電極 10 密著層 11 層間層 12 正孔植入層 13 發光層 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 1271117 A7 B7 五、發明説明（18) 14 陰極 15 封閉層 (請先閲讀背面之注意事項再填寫本頁) 21，31 畫素 100光電裝置 11 0 0個人電腦 1102鍵盤 1104本體部 1106顯示單元 1 200攜帶電話機 1 2 0 2操作鈕 1 204受話口 1 2 0 6送話口 1 300數位照相機 1 302殼體 1 304受光單位 1 306快門鈕 1 3 0 8電路基板 經濟部智慧財產局員工消費合作社印製 1 3 1 2視訊信號輸出端子 1 3 1 4輸出入端子 1440個人電腦 1 4 3 0電視監視器 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -21 -El(ll) The first illuminance of the pixel 11 is applicable to the Chinese National Standard (CNS) A4 specification (21 〇ϋ mm) — . — — — — — — — — — ^ ^ — — 11 Order - III, I line (please read the note on the back and fill out this page) 1271117 A7 B7 V. Description of invention (17) E2(l 1) Illumination period E3 (l 1) The third light-emitting period El (21) The first light-emitting period E2 of the child's 21 (21) The second light-emitting period E3 of the halal 21 (21) The third light-emitting period of the pixel 21 El(31) The first light-emitting period E2 of the child dansin 31 (31) The second light-emitting period E3 of the dinar 31 (31) The third light-emitting period of the pixel 31 Vsig control potential Ilep current 値 (please Read the notes on the back and fill out this page.) Ministry of Economic Affairs, Intellectual Property Office, Staff and Consumer Cooperatives Printed 1 Glass substrate 2 Polycrystalline germanium layer 3 Gate insulating film 4 _ pole electrode 5a p-type transistor (MOS transistor) 5b η type Transistor (MOS transistor) 6 first interlayer insulating film 7 source electrode and Polar electrode 8 2nd interlayer insulating film 9 Alizarin electrode 10 Adhesive layer 11 Interlayer 12 Positive hole implant layer 13 Light-emitting layer This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) 1271117 A7 B7 V. (18) 14 Cathode 15 sealing layer (please read the back note first and then fill in this page) 21,31 pixel 100 photoelectric device 1 0 0 personal computer 1102 keyboard 1104 body portion 1106 display unit 1 200 mobile phone 1 2 0 2 operation button 1 204 receiving port 1 2 0 6 sending port 1 300 digital camera 1 302 housing 1 304 light receiving unit 1 306 shutter button 1 3 0 8 circuit board economic department intellectual property bureau employee consumption cooperative printing 1 3 1 2 video signal output terminal 1 3 1 4 input and output terminal 1440 personal computer 1 4 3 0 TV monitor This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -21 -