TWI267138B - Plasma processing apparatus and plasma processing method - Google Patents
Plasma processing apparatus and plasma processing methodInfo
- Publication number
- TWI267138B TWI267138B TW094105665A TW94105665A TWI267138B TW I267138 B TWI267138 B TW I267138B TW 094105665 A TW094105665 A TW 094105665A TW 94105665 A TW94105665 A TW 94105665A TW I267138 B TWI267138 B TW I267138B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- processing chamber
- plasma processing
- wall
- electrode
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B37/00—Cases
- G04B37/12—Cases for special purposes, e.g. watch combined with ring, watch combined with button
- G04B37/122—Cases for special purposes, e.g. watch combined with ring, watch combined with button used as a mirror
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B37/00—Cases
- G04B37/0008—Cases for pocket watches and wrist watches
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B45/00—Time pieces of which the indicating means or cases provoke special effects, e.g. aesthetic effects
- G04B45/0069—Cases and fixed parts with a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A plane parallel plasma processing apparatus includes an impedance adjustment unit having a capacitive component, which is disposed between a lower electrode and a processing chamber. The impedance adjustment unit adjusts the value of the impedance over the path extending from an upper electrode to a grounded casing of a matching circuit via plasma, the lower electrode and the wall of the processing chamber to a level lower than the value of the impedance over the path extending from the upper electrode to the grounded casing of the matching circuit via the plasma and the wall of the processing chamber, and thus, highly uniform plasma can be generated by minimizing the generation of plasma in the space between the cathode electrode and the processing chamber wall.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004136566 | 2004-04-30 | ||
JP2004381290A JP4553247B2 (en) | 2004-04-30 | 2004-12-28 | Plasma processing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200540987A TW200540987A (en) | 2005-12-16 |
TWI267138B true TWI267138B (en) | 2006-11-21 |
Family
ID=35185885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094105665A TWI267138B (en) | 2004-04-30 | 2005-02-24 | Plasma processing apparatus and plasma processing method |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050241769A1 (en) |
JP (1) | JP4553247B2 (en) |
KR (1) | KR100623829B1 (en) |
TW (1) | TWI267138B (en) |
Cited By (1)
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---|---|---|---|---|
TWI747998B (en) * | 2016-11-18 | 2021-12-01 | 美商帕斯馬舍門有限責任公司 | Ion filter |
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JP2006101480A (en) * | 2004-07-12 | 2006-04-13 | Applied Materials Inc | Apparatus and method for a fixed impedance transformation network for use with a plasma chamber |
KR100943432B1 (en) * | 2005-12-28 | 2010-02-19 | 주식회사 에이디피엔지니어링 | Plasma processing equipment |
JP4876641B2 (en) * | 2006-03-09 | 2012-02-15 | 東京エレクトロン株式会社 | Plasma processing equipment |
US20070221128A1 (en) * | 2006-03-23 | 2007-09-27 | Soo Young Choi | Method and apparatus for improving uniformity of large-area substrates |
JP4838612B2 (en) * | 2006-03-28 | 2011-12-14 | 東京エレクトロン株式会社 | Plasma processing equipment |
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US20080073032A1 (en) * | 2006-08-10 | 2008-03-27 | Akira Koshiishi | Stage for plasma processing apparatus, and plasma processing apparatus |
JP2008186939A (en) * | 2007-01-29 | 2008-08-14 | Tokyo Electron Ltd | Plasma treatment equipment and plasma treatment method, and storage medium |
US7968469B2 (en) * | 2007-01-30 | 2011-06-28 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity |
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US8129283B2 (en) | 2007-02-13 | 2012-03-06 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
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JP5029089B2 (en) * | 2007-03-26 | 2012-09-19 | 東京エレクトロン株式会社 | Mounting table for plasma processing apparatus and plasma processing apparatus |
JP4882824B2 (en) * | 2007-03-27 | 2012-02-22 | 東京エレクトロン株式会社 | Plasma processing apparatus, plasma processing method, and storage medium |
US20170213734A9 (en) * | 2007-03-30 | 2017-07-27 | Alexei Marakhtanov | Multifrequency capacitively coupled plasma etch chamber |
US8563619B2 (en) * | 2007-06-28 | 2013-10-22 | Lam Research Corporation | Methods and arrangements for plasma processing system with tunable capacitance |
JP5223377B2 (en) | 2008-02-29 | 2013-06-26 | 東京エレクトロン株式会社 | Electrode for plasma processing apparatus, plasma processing apparatus and plasma processing method |
US20100000684A1 (en) * | 2008-07-03 | 2010-01-07 | Jong Yong Choi | Dry etching apparatus |
US20140069584A1 (en) * | 2008-07-23 | 2014-03-13 | Applied Materials, Inc. | Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode |
US8637794B2 (en) | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
TWI432100B (en) * | 2009-11-25 | 2014-03-21 | Ind Tech Res Inst | Plasma generating aparatus |
US8652297B2 (en) * | 2010-08-03 | 2014-02-18 | Applied Materials, Inc. | Symmetric VHF plasma power coupler with active uniformity steering |
JP5666888B2 (en) * | 2010-11-25 | 2015-02-12 | 東京エレクトロン株式会社 | Plasma processing apparatus and processing system |
JP5335875B2 (en) * | 2011-10-03 | 2013-11-06 | 東京エレクトロン株式会社 | Plasma processing equipment |
US8911588B2 (en) * | 2012-03-19 | 2014-12-16 | Lam Research Corporation | Methods and apparatus for selectively modifying RF current paths in a plasma processing system |
KR101869949B1 (en) * | 2013-09-03 | 2018-06-21 | 주식회사 원익아이피에스 | Deposition method for multilayer and substrate process apparatus |
US9472410B2 (en) * | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
JP6218650B2 (en) * | 2014-03-11 | 2017-10-25 | 東京エレクトロン株式会社 | Plasma processing equipment |
KR102375158B1 (en) * | 2014-12-26 | 2022-03-17 | 삼성디스플레이 주식회사 | Deposition device and method of driving the same |
CN105555002A (en) * | 2016-02-01 | 2016-05-04 | 江苏微导纳米装备科技有限公司 | Dynamic parallel-plate plasma generator |
JP6769127B2 (en) | 2016-06-21 | 2020-10-14 | 東京エレクトロン株式会社 | Plasma processing equipment |
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JP7061511B2 (en) * | 2018-05-10 | 2022-04-28 | 東京エレクトロン株式会社 | Filter device and plasma processing device |
JP2019212648A (en) * | 2018-05-31 | 2019-12-12 | 東京エレクトロン株式会社 | Film forming apparatus and film forming method |
JP2020105590A (en) * | 2018-12-27 | 2020-07-09 | キオクシア株式会社 | Substrate processing apparatus and substrate processing method |
JP6808782B2 (en) * | 2019-06-06 | 2021-01-06 | 株式会社日立ハイテク | Plasma processing equipment and plasma processing method |
CN110911262B (en) * | 2019-11-12 | 2022-07-22 | 北京北方华创微电子装备有限公司 | Inductively coupled plasma system |
KR102603429B1 (en) * | 2020-10-30 | 2023-11-16 | 세메스 주식회사 | Apparatus for controlling impedance and system for treating substrate with the apparatus |
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TW511158B (en) * | 2000-08-11 | 2002-11-21 | Alps Electric Co Ltd | Plasma processing apparatus and system, performance validation system thereof |
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TW200300649A (en) * | 2001-11-27 | 2003-06-01 | Alps Electric Co Ltd | Plasma processing apparatus, its driving method, matching circuit design system, and plasma processing method |
US6565652B1 (en) * | 2001-12-06 | 2003-05-20 | Seh America, Inc. | High resistivity silicon wafer and method of producing same using the magnetic field Czochralski method |
KR100444512B1 (en) * | 2002-01-25 | 2004-08-16 | 엘지전자 주식회사 | Method For Removing Impurities Of Plasma Display Panel |
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US6863772B2 (en) * | 2002-10-09 | 2005-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd | Dual-port end point window for plasma etcher |
US20040118344A1 (en) * | 2002-12-20 | 2004-06-24 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
-
2004
- 2004-12-28 JP JP2004381290A patent/JP4553247B2/en not_active Expired - Lifetime
-
2005
- 2005-02-24 TW TW094105665A patent/TWI267138B/en not_active IP Right Cessation
- 2005-04-28 KR KR1020050035562A patent/KR100623829B1/en not_active Expired - Lifetime
- 2005-04-29 US US11/117,391 patent/US20050241769A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI747998B (en) * | 2016-11-18 | 2021-12-01 | 美商帕斯馬舍門有限責任公司 | Ion filter |
Also Published As
Publication number | Publication date |
---|---|
KR20060047589A (en) | 2006-05-18 |
JP4553247B2 (en) | 2010-09-29 |
TW200540987A (en) | 2005-12-16 |
JP2005340760A (en) | 2005-12-08 |
US20050241769A1 (en) | 2005-11-03 |
KR100623829B1 (en) | 2006-09-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |