TWI263186B - Semiconductor device, display device and driving method of display device - Google Patents
Semiconductor device, display device and driving method of display device Download PDFInfo
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1263186 九、發明說明: [發明所屬之技術領域] (E1 f广.明係關於用於控制電激發光 (EleCtr〇luminescence :以下簡稱為 el)顯 元件之電路構成。 、、/、 寺被驅動 [先前技術] 农各像素中採用自發光元件電 發光:件…示裝置,為自發光型有= 广耗:力較小等之優點’乃做為用來取代 '咖广::—咖)及映像管(Cath〇de Ray u e,CRT)等顯不裝置而受到矚目。 膜電ΐ:;中’二各像素設置用以個別控制EL元件之薄 不才工制EL兀件之主動矩陣型 可成為高精細的顯示裝置。 為衣置,係被期待 第心』不’ η列111行的主動矩陣型EL顯示事置 素的電路構成。於此EL顯示裝η,於以二 二娜線GL往列方向延伸,多數條的資料線此 有機原:二“王行方向延伸。此外,各像素係具備, (弟一TFT)21及保持電容Cs。 收門! :TmP!連接於間極線gl及資料線dl,於開極接 甲1 U (造擇k號)而導通。此時,供應於資料線Dl 勺貝枓信號,係保持於連接在第1TFTi〇及第2tft2i之間 337094 1263186 接二^ S。於第2TFT21的閑極經由上述第1TFT10 / 於所供應之資料信號之電壓,第2TFT21係從電 TVL供應對應該電壓值之電流至有機元件5〇 機虹元件50係於發光層中再次結合從 以及從陰極所注入入的^ 從激無壯 > 而激起^先/刀子,此發光分子 =回復至基底狀態時產生發光。有機EL元件5〇 =度係幾乎與供應至有該元件5〇輸成正 於而、述,於每個像素當中,藉由控制對應資料信 二元件广流,從而以對應該資料信 望的影像顯示。件發光,而於整個顯示裝置進行期 必要顯示裝置中,為了實現高品質的顯示,有 笋光因貝料號之亮度,而破實的使有機EL元件501263186 IX. Description of the invention: [Technical field to which the invention pertains] (E1 f Guang. The system relates to the circuit configuration for controlling the electro-excitation light (EleCtr〇luminescence: hereinafter referred to as el) display element. , , /, Temple is driven [Prior Art] Self-illuminating elements in rural pixels are used for electroluminescence: the device is a self-illuminating type, and has the advantage of being wide-ranging: the force is small, etc., as a substitute for 'Caiguang::-cafe' And the display tube (Cath〇de Ray ue, CRT) and other devices are attracting attention. Membrane Electron:; The middle two pixels are provided for individually controlling the EL element. The active matrix type of the EL element can be a high-definition display device. For the clothing, it is expected that the first matrix "no" η column 111 rows of active matrix type EL display circuit configuration. In this EL display, the η is extended in the direction of the column line GL, and the data lines of the plurality of lines are organic: two "the direction of the king line extends. In addition, each pixel system has, (di-one TFT) 21 and keeps Capacitor Cs. Close the door! : TmP! is connected to the inter-pole line gl and the data line dl, and is turned on in the open-pole armor 1 U (the k-number is selected). At this time, the signal is supplied to the data line Dl. Between the first TFTi and the second tft2i, 337094 1263186 is connected to the second TFT 21. The second TFT 21 is supplied with the voltage of the data signal supplied from the first TFT 10/the second TFT 21, and the second TFT 21 supplies the corresponding voltage value from the electric TVL. The current flows to the organic component 5, and the rainbow element 50 is recombined in the light-emitting layer and is injected from the cathode, and the illuminating molecule is restored to the substrate state. The luminescence is generated. The organic EL element 5 〇 = degree system is almost the same as the supply to the element 5 〇, and in each pixel, by controlling the corresponding data signal two elements wide stream, so as to correspond to the information Image display. The light is illuminated and is performed on the entire display device. The display device is necessary in order to achieve high-quality display, with a brightness due to light shoots item number of the shell, while the real breaking the organic EL element 50
及有機主㈣陣型中,對於配置於驅動電源線VL 右Γ 件50之間的第2tft21,乃要求即使電流於 幾£L·兀件5〇流通而使該E ^ 動,甘1 k + U 1卞〕U的㈣極電位產生變 〃没極電流亦不會產生變動。 連接==圖所示,一1較多為採用:源極 極例,、:二=線VL,汲極連接於有機虹元件5。的陽 、’猎由被施加有對應資料信號之電壓之間極以及上 =也之間的電位差Vgs,而可控制源極沒極 P通這型TF丁。 电々丨l < 於然而’於採用】〕通道型TFT來做為第2TFT21時,由 、如上述’源極係連接於驅動電源線VL,並藉由該源極 317094 1263186 及!極之電位差來控制沒極電流,亦即押制供,… 元件50之電流,因此若驅動電源線v/工龜應至有機紅 則各個元件5〇之發光哀 1、 的電壓產生變動, 例如於某圖框期間所顯示之二 (例如為全面白色箄 。象為回壳度的情況等 巴寻)一旦有較多的雷户 驅動電源'Wd,經由各㈣動「下子從單一的 之多數個有機E L元件5 〇時二::流通至基板上 能產生變動。因此,於此情況Γ二:…的電位可 動。 易引起發光売度的變 因此,本申請人乃提出,如第7 型TJFT夹| A -从 圖斤不之採用11通道 末做為兀件驅動用的第2tft2〇 列專利文獻1)。於此兩败由 之像$电路(苓照下 機£L元件50之門.二,不僅於驅動電源線VL及有 70仟⑽之間设置η通道型TFT 、, 為了將第2TFT20的閘極、开&門彳 ,亚且 位差Vgs,而於該閉極源極 :山 於重設(放雷)黛7ΤΡΤΟΠ 谷S。此外,用 ⑴ 0的源極電位(有機EL元件5〇的陽 「之重設用TFT30,係連接於保持電…:F 0 接受重設用脈衝。^VSS之間,此™0係於問極 持電Γ二構成:’有必要對應資料信號,同時設定保 的門二二'極及乐2電極的電位,亦即第2TFT20 電位。因此,於輸心位準的選擇信號 於: 且輸出資料信號至資料線队之同時,料由 則出重設用脈衝至重設線RSL而導通Tm〇。藉此,設定 317094 7 1263186 之電位,並將源極降低 1 丁FT10 及第 3TFT30, 料信號之電位差,並對 由第2TFT20供應電流 第2TFT20的閘極為對應資料信號 至電源Vss電位。再者,若不導通^ 則可於保持電纟Cs中保㈣應資 應此電位差,從驅動電源線VL經 至有機EL元件50。 、ι 2003-173 154 號公報 (專利文獻1)日本專利公開 [發明内容] (發明所欲解決之課題) 籍由上述第7圖所示的恭In the organic main (four) formation, the second tft21 disposed between the right side 50 of the driving power line VL requires that even if the current flows in a few miles of 兀5兀, the E ^ ̄ , , , , , , , , , , , , , 1卞]U's (four) pole potential produces no turbulent current and does not change. Connection == As shown in the figure, more than one is used: source pole example,: two = line VL, and the drain is connected to the organic rainbow element 5. The yang, the hunter is the potential difference Vgs between the voltage between the voltage and the upper voltage applied to the corresponding data signal, and the source finite current P can be controlled. When the channel TFT is used as the second TFT 21, the source is connected to the driving power source line VL, and the source is 317094 1263186 and ! The potential difference between the poles is used to control the immersed current, that is, the supply current, ... the current of the component 50, so if the driving power line v / the worker is supposed to be organic red, the voltage of each component 5 变动 1、 1, the voltage changes, for example The second one displayed during a certain frame (for example, a full-scale white 箄. For example, the case of the degree of resilience, etc.), once there are more Thunder driving power supplies 'Wd, move through each (four) The organic EL element 5 〇 二 2:: Circulation to the substrate can cause fluctuations. Therefore, in this case, the potential of the second: ... can be moved. It is easy to cause the change in the luminosity, so the applicant proposes, for example, type 7 TJFT clip | A - From the end of the 11th channel, the 2tft2 专利 专利 专利 专利 专利 专利 专利 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第Second, not only the n-channel type TFT is provided between the driving power supply line VL and 70 仟 (10), but also the gate of the second TFT 20, the opening and the threshold, and the potential difference Vgs, and the closed-pole source : Mountain is reset (thundering) 黛7ΤΡΤΟΠ Valley S. In addition, the source potential of (1) 0 is used. The TFT "reset TFT 30 of the organic EL element 5" is connected to the holding electric...: F 0 accepts the reset pulse. Between VSS, this TM0 is connected to the pole. Corresponding to the data signal, the potential of the second and second poles of the gate is also set, that is, the potential of the second TFT20. Therefore, the selection signal at the center of the heart is at: and the data signal is output to the data line team. The reset pulse is applied to the reset line RSL to turn on Tm 〇. Thereby, the potential of 317094 7 1263186 is set, and the source is lowered by 1 FT10 and the third TFT 30, and the potential difference of the material signal is supplied to the second TFT 20. The gate of the current second TFT 20 corresponds to the potential of the data signal to the power supply Vss. Further, if it is not turned on, it can be maintained in the power supply Cs (4), and the potential difference is applied from the driving power supply line VL to the organic EL element 50. Japanese Patent Publication No. PCT Publication No. JP-A No. 154 (Patent Document 1) [Draft of the Invention] (Knowledge to be Solved by the Invention)
A - 1 , )电路構成,可採用η通道TFT ;做為s又置於1個像素中的 a m ΟΤΡΤΟΠ ΛΑ 汀有兒日日脰。然而,為了設定 乐2TFT20的源極電位,,兩 认户 也而要放電用的第3TFT30,因此 表母1個像素中必須設置 重今用+ % v u电日日脰。此外,亦必需具備 里°又用电源Vss,此外,险了、时抑人 ,,VT L ^卜除了砥擇線GL、資料線DL及電 源、、表VL之外,另需要用來 又』个仏應電源VSS至各像辛凡 用電源線及重設線RSL。0^ 诼$之重叹 浐乃户”裏RSL因此,對於降低每-個像素的面 在者限制,而難以適用於—個像素的面積較小之 tVF(Electr0mc Vlew Fmd 之顯示褒置。 -子减“)寺小型且高精細 本發明係關於用來實現一 元件的供應電力不易受到驅動 容易達到小型化。 種顯示裝置,供應至被驅動 電源的電麼變動之影響,且 (用以解決課題之手段) 本發明係具備: 資料信號之切換用電 於閘極接收選擇信號而動作 晶體;汲極連接於電源線, ,並擷取 源極連接 3]7094 1263186 於被驅動元件,並於閘極接 ,之資料信號,而控制從上 蝴奐用電晶體所供應 -的電力之元件㈣用千曰'源線供應至上述被驅動元件 、几忏驅動用電晶體;以 v u 1干 電晶體的上述閘極與源極之間, 於上述元件驅動用 之閘極源極間電壓之保持電容保持對應上述資料信號 施加可使上述被驅動元件動二之=上,電源線,週期性的 上述元件驅動用電晶體 =仏虎,以及用來設定 本發明的其他態樣為::之設定信號。 素之頒示裝置,各像素係㈣ 車狀之夕數個像 線且於開極接收選擇信駆動兀件;連接於選擇 ‘用電晶體;沒極連接於電源線=取貧料信號之切換 件,並於間極接收由上述切換用妾於上述被驅動元 號,而控制從上述電源嗖、电曰"豆所供應之資料信 兀件驅動用電晶體;以及 力兀件的包力之 上述閘極盥上述沔钰> μ 、处兀件駆動用電晶體的 單之料:: 之間’ μ持對應上述資料^之· 屋之保持電容;上诚帝 心貝了十1口琥之包 卜、f - 1 …7 ,可於每一條中 上述兀件驅動用電晶體的源極電出用“疋 陣的每—列或是各 _ / 。疋^ t ’亚且與矩 “广疋母—仃所鄰接的電源線係獨立設置。 偏移1;交在:::呆持電容的同時,亦一 元#雕# 4偏移用電容係將第】電極連接於上述 用電晶體的上述間極,於第2電極施加 L號’亚對應該選擇作 、 晶體之間極電位。“「 偏移上述元件驅動用電 此才木用上述構成來作為控制被驅動元件之電路元 317094 9 1263186 件,藉此,於i個像素區域内,可縮小通常無法用作顯示 區域之這些電路元件的面積至最小限度。此外,係設定為 '於形成為矩陣狀的每一列及每一行可獨立控制電源線,以 η通道型薄膜電晶體來構成2個電晶體5並設定連接於元 件驅動用電晶體的被驅動元件之源極電位(保持電容之一 邊的電極電位)為充分低的電位,而可施加資料信號於此元 件驅動用電晶體的閘極。因此,可對應資料信號來充電保 持電容(元件驅動用電晶體的閘極一源極之間),並確實予 ®以保持。 . 本發明的其他態樣為,關於驅動各像素的被驅動元件 / 而進行顯示之顯示裝置之驅動方法,係於輸出對應顯示内 ' 容之資料信號於資料線之前,設定該資料線為特定的預充 電電位’並設定上述電源線為’用來設定上述元件驅動用 電晶體的源極為上述被驅動元件的非動作電位之設定電 位;並且,經由輸出選擇信號至上述選擇線而控制為導通 φ 之上述切換用電晶體,而使上述元件驅動用電晶體動作; 於經由上述電源線而設定上述元件驅動用電晶體的上述源 極為上述被驅動元件的非動作電位之後,輸出資料信號至 上述貢料線。 本發明的其他態樣為,於上述驅動方法中,降低輸出 至上述選擇線之上述選擇信號,而不導通上述切換用電晶 體’並籍由設置於元件驅動用電晶體之間極以及上述閘極 線之間的電位偏移用電容5而偏移上述元件驅動用電晶體 的閘極電位至該電晶體的非導通方向,之後,提高上述電 10 317094 1263186 源線至上述被驅動元件的動作電 、 體係對應設定於上述保持電容之2上述兀件驅動用電晶 述電源線之電力至上述被::::位差,而供應來自於上 (發明之效果) 件。A - 1 , ) circuit configuration, η channel TFT can be used; as a s and placed in 1 pixel, a m ΟΤΡΤΟΠ 汀 有 有 有 脰 脰 脰 脰 脰 脰 脰 脰 脰 脰 脰 脰 脰 脰 脰 脰However, in order to set the source potential of the music 2 TFT 20, the two TFTs 30 are also required to be discharged, so that one of the pixels of the watch must be set to use + % v u electric day and day. In addition, it is necessary to have the power supply Vss, in addition, the danger, the time is restrained, VT L ^ Bu in addition to the selection line GL, data line DL and power, and table VL, another need to be used again The power supply VSS should be used to power the power line and reset line RSL. Therefore, it is difficult to apply to the tVF (Electr0mc Vlew Fmd display device) with a small area of one pixel. Sub-subtraction ") Temple is small and high-definition The present invention relates to the miniaturization that the supply power for realizing one component is not easily driven. The present invention is characterized in that: the switching of the data signal is applied to the gate receiving the selection signal to operate the crystal; and the drain is connected to the display device, which is affected by the fluctuation of the power supplied to the driven power source. Power line, and draw source connection 3]7094 1263186 on the driven component, and connected to the gate, the data signal, and control the power supply from the upper butterfly - (four) with thousands of ' The source line is supplied to the driven element and the plurality of driving transistors; and the holding capacitance of the voltage between the gate and the source for driving the device is maintained between the gate and the source of the vu 1 dry transistor. The application of the data signal enables the above-mentioned driven element to be moved to the upper, the power supply line, the periodic element-driving transistor = 仏 ,, and the setting signal used to set the other aspects of the present invention. The instruction device of the prime, each pixel system (4) is a plurality of image lines on the eve of the vehicle and receives the selection signal from the open pole; connected to the selection of the 'electrical crystal; the connection is not connected to the power line = the switching of the poor material signal And receiving, at the interpole, the above-mentioned driven element number by the above switching, and controlling the data signal driving transistor supplied from the power source, the electric 曰, and the bean; and the force of the force component The above-mentioned gate 盥 盥 沔钰 μ 、 、 、 、 、 、 、 : : : : : : : : : : : : : : : : : : : : : : : : μ μ μ μ μ μ μ μ μ μ μ μ μ μ The amber package, f - 1 ...7, can be used in each of the above-mentioned components to drive the source of the transistor. The power cords adjacent to the “Guangyumu-仃” are independently set. Offset 1; at the same time as ::: holding the capacitor, and also using the capacitor to connect the _th electrode to the above-mentioned interpole of the above-mentioned transistor, and to apply the L-number to the second electrode. The opposite should be chosen, the extreme potential between the crystals. ""The above-mentioned component driving power is used as the circuit element 317094 9 1263186 for controlling the driven component, whereby the circuits which are normally not usable as the display region can be reduced in i pixel regions. The area of the component is minimized. In addition, the power supply line is independently controlled for each column and each row formed in a matrix, and two transistors 5 are formed by an n-channel type thin film transistor and are connected to the component drive. The source potential of the driven element of the transistor (electrode potential on one side of the holding capacitor) is a sufficiently low potential, and a data signal can be applied to the gate of the transistor for driving the element. Therefore, it can be charged corresponding to the data signal. The holding capacitor (between the gate and the source of the element driving transistor) is surely held by the heater. The other aspect of the present invention is a display device for displaying the driven element of each pixel. The driving method is to set the data line to a specific pre-charging potential before outputting the corresponding data signal in the corresponding display. The power supply line is 'the setting potential for setting the non-operating potential of the driven element to the source of the element driving transistor, and the switching transistor for controlling the conduction to φ via the output selection signal to the selection line, The element driving transistor is operated, and the source of the element driving transistor is set to be a non-operating potential of the driven element via the power supply line, and then a data signal is output to the tributary line. In the above driving method, the selection signal outputted to the selection line is lowered, and the switching transistor is not turned on and is disposed between the element driving transistor and the gate line. The potential shifting capacitor 5 shifts the gate potential of the element driving transistor to the non-conduction direction of the transistor, and thereafter increases the operation power and system correspondence of the source 10 317 094 1263186 source line to the driven element. The power of the power supply line for driving the device for driving the device 2 is set to the above-mentioned::: Difference, is supplied from the (Effect of invention) member.
數,而確實的驅動被驅動力件。、大又的|路元件數及配線 域内的電路元件數㈣的=此,可縮小1個像素區 個像素面積較小之小㈣ 取小限度’即使採用於1 達到高㈣,辑實爾,亦可 此外,可由例如為相同之/通\°為/曰良之顯示裝置。 的電晶體,可於相同製程形成: 構成所有 可降低製程數目。目此,亦象:电路的琶晶體,而 [實施方式] 八備卜低特性變動之效果。 以下利用圖式來說明本發明 為實施型態)。 罕乂1土貝她型怨(以下稱 第1圖係顯示有關本發明 1單位的電路構成’第2圖传” 〃:之"^月豆衣置之 μ ^ θ I、、1不,於各像素採用第1圖The number, while the actual drive is driven by the force piece. The number of circuit components and the number of circuit components in the wiring domain (4) = This can reduce the area of one pixel area by a small pixel size (4) Take a small limit 'even if it is used to reach high (four), the series, Alternatively, it may be, for example, a display device that is the same / pass / °. The transistors can be formed in the same process: constituting all can reduce the number of processes. For this reason, it is also like the 琶 crystal of the circuit, and [Embodiment] The effect of the low-characteristic variation of the eight preparations. Hereinafter, the present invention will be described by way of illustration.罕乂1土贝, her type of grievance (hereinafter referred to as the first figure shows the circuit composition of the unit of the present invention, 'Fig. 2' 〃: &: "^月豆衣置之 μ ^ θ I,, 1 No, Use Figure 1 for each pixel
的兒路構成之顯示裝置的 U 態中顯示裝置,成 圖。於本實施型 係於面板基:上陣型有魏顯示裝置, 陣狀配置多數個像素。於此面板基 板的矩陣的列方向,形成依丄 及用來週缝的供貞動作# ( ^〜之選擇線GL, Λ/1. 一 "乍兒源斤乂⑸)於被驅動元件之電源 < ’於行方向則形成輪出資料信號之資料線DL。 各像素大致設置在由這些線所區隔的區域並具備有 317094 1263186 斗幾E T - 兀件50來做為被驅動元件,此外,具備均以 二㈣膜電晶體™。,及元件二 動作之2個電曰? ’二做為用來控制此元件的發光 之電壓之佯備用來保持對應資料信號 之電位CSC::及用來偏移第2™的閘極 雷射Ξ 1讲1()及第2TFT12均可由於主動層採用例如夢由 田射回火等而成為多日日日化之多晶 ,由 n導電型的雜質之n、g、… 曰曰矽亚且摻雜 同導電型^ 型缚膜電晶體來構成。由於為相 、包支’因此2個TFT可經由相回制妒& , 4 質摻雜製程)來形成。 。衣私(至シ相同的雜 為對輸情DL的電位二“虎而導通,該源極則成 ^ ^1 VL5 ^l,J 14 的源極、保持電容= 保持電容CS係連接用電容Cp連接。 並對應資料信梦 、$ 2TFT12的間極及源極之間, 具備連接於第2TFT12的間極之第間具體而言,係 2TFT12的源極(及有機 弟1笔極,及連接於第 於第1電極及第2 ·栖7^ 5〇的陽極)之第2電極,並 (Vsjg) 〇 °之間,保持對應資料信號之電壓The display device is shown in the U state of the display device. In this embodiment, the panel base is used: the upper array type has a Wei display device, and a plurality of pixels are arranged in a matrix. In the column direction of the matrix of the panel substrate, the enthalpy action and the squeezing action # for the circumferential seam are formed (the selection line GL of the ^~, Λ/1. a "乍儿源斤乂(5)) is driven by the driven component Power supply < 'In the row direction, the data line DL of the data signal is formed. Each of the pixels is provided substantially in a region partitioned by the lines, and is provided with a 317094 1263186 bucket E T - member 50 as a driven component, and further includes a two (four) film transistor TM. And the second component of the action 2? 'Secondary is used to control the voltage of the illuminating element of this component to maintain the potential of the corresponding data signal CSC:: and the gate laser used to offset the second TM Ξ 1 speak 1 () and 2nd TFT12 Since the active layer is made into a multi-day polycrystalline by, for example, a dream by field tempering, etc., n, g, ... of the n-conducting type impurity are doped and doped with the same type of confinement type transistor crystal Come to form. Since the phase is a package, the two TFTs can be formed via phase-to-phase fabrication and plasma implantation processes. . Clothing private (to the same miscellaneous for the potential DL potential "two tigers turned on, the source is ^ ^ 1 VL5 ^ l, J 14 source, holding capacitance = holding capacitor CS system connection capacitor Cp Connected to and correspond to the information letter dream, between the 2 pole and the source of the 2TFT12, and the second pole connected to the second TFT12, specifically, the source of the 2TFT12 (and the body of the 2nd body, and connected to The second electrode of the first electrode and the anode of the second electrode, and the voltage of the corresponding data signal is maintained between (Vsjg) and 〇°
U偏移”容^^於第2Tm2的閘極及選擇 317094 12 1263186 線G L夕网 w B ,亚對應選擇信號的下降而降低第2TFTI2的 -g 2 ^ 具版而3,该第1電極係連接於選擇線GL·, 電極:極係連接於第2TFT12的間極及保持電容Cs的第1 部20(1第,B圖—所不’於面板基板上具備顯示部1 00及驅動 陣狀。2顯,示部100 ’上述構成之多數個像素係配置為矩 、J力部200係設置於該顯示部 |/v 用以驅動顯示部_的各像辛…rD二周邊,而輪出 言,驅動部200 Π從1 就及電源。具體而 I之UU i丁、具備,Η驅動哭(匕求士 •及V驅動哭吉古A 力口口(水千方向驅動部)210, • 直方向驅動部)220,H驅動哭21 D Θ π π 、於矩陲66 t + 1 里刀口。2 1 〇係對延伸 、丁方向之多數條資料線Dr^,輪出ff /S Μ次4CL y 號及之後所u 知出對應的-貝料^ .1個水平掃μ Γ 動器22G則具備,於每 線GL依序幹出1又對延伸於矩陣的列方向之多數條選擇 依序輻出用來導通第1TFTl〇之 部。此外,於太者4 k擇k被之輸出 1方、本貫施型態中,該V驅動哭?9Λ〆 #在矩陣的列方向與選 σ〇 係具備,對 /、k详踝GL —同設晉沾年、広仏 電源信號及設定传妒> _ & β 〇电源線VL輸出 又< 1口就之輸出部。電源作 件的發光動作期間中被 ”儿…、有機元 電位(Pvdd)。設定作难% 士 、 成EL兀件動作之 水平掃描期間中+ 切邛j間之珂之1個 r之貝#设定期間中所輸出, £L·元件5〇的陽極 而係為使有機The U offset "capacity" is applied to the gate of the second Tm2 and selects the 317094 12 1263186 line GL network w B , and the sub-corresponding selection signal decreases to decrease the -g 2 ^ of the second TFTI2 and the third electrode system Connected to the selection line GL·, the electrode is connected to the inter-pole of the second TFT 12 and the first portion 20 of the storage capacitor Cs (1, B, No), and the display unit 100 and the driver array are provided on the panel substrate. The display unit 100' is configured such that a plurality of pixel systems of the above configuration are arranged as a moment, and the J-force portion 200 is provided on the display portion |/v for driving each image of the display unit _...rD, and the wheel is spoken. , the drive unit 200 Π from 1 and the power supply. Specifically, I UU I, with, Η drive to cry (匕求士 and V drive crying Jigu A force mouth (water thousand direction drive) 210, • straight Direction drive unit) 220, H drive cry 21 D Θ π π, at the edge 陲 66 t + 1 in the knife edge. 2 1 〇 对 延伸 、 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The y number and the subsequent u know that the corresponding - bedding material ^. 1 horizontal sweep μ Γ actuator 22G is provided, and each line GL sequentially dries 1 and the majority of the column direction extending in the matrix Selecting the sequential radiance to turn on the part of the first TFT1 。. In addition, the U 4k selects the output of the square, and the singular mode, the V drive cries? 9Λ〆# in the column direction of the matrix Select σ〇 system, / 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 In the light-emitting operation period of the workpiece, it is "...", and the organic potential (Pvdd) is set. In the horizontal scanning period in which the operation is difficult, the EL element is in the horizontal scanning period. Output in the fixed period, the anode of the £L·element 5〇 is made organic
开杜π认也 的源極放電,並將右嬙FT ^極電位設定於非動作電位 " 位(例如為ον)。 之車乂低的固定電Turn on the source discharge of the π 认 ,, and set the right 嫱 FT ^ potential to the non-action potential " bit (for example, ον). The car has a low fixed electricity
接下來,表眧笼,门I " *3圖來說明上述電 兒峪構成之驅動方法 317094 ]3 1263186 及動作。第3圖係說明於】個水 動作時序(T]m]ng)之圖式。 r』間,I個像素的 於本實施型態中,係在第3圖 £ 選擇電位(L位準)错成 '阳彡罢干 不之返擇k號從非Next, the table cage, door I " *3 diagram to illustrate the driving method of the above-mentioned electric car 317094 ] 3 1263186 and action. Figure 3 is a diagram illustrating the timing of a water action (T]m]ng). Between r, I pixel in this embodiment, in Figure 3, the selection potential (L level) is wrong as 'yangshuo's dry, not returning k number from non
…(位丰)父成进擇電位(H 丽的期間P】,如第3圖⑷所示將 才序〜要在 至對應之像素的資料線DJL。 )預充電信號輸出 VL。具體而言,例如從9 Ί疋信號於電源線 準),降低至*有機EL元件^ 力作電位(電源信號位 的較低設定:: 0的陰極大約相同之例續 白0季乂低。又疋電位。藉此,於期間 電。 兒/原線VL進行放 當成為時序t2時’則選擇信號 擇電位,而導诵筮1TPTM 并、擇电位上升至選 準而導通第1丁FT]0 士 如此,於選擇信號成為ίί位 DL。此預充電^ : ^預充電信號已輪出至資料線 (於三極管C二:可使第2tfti2達到全導通 位。亦即ni/ 域之導通動作)之充分高的電 不會依據源極.汲極間電壓 極電流Id固定之高電位。 而此夠使汲 因此,於期間P3,預充電信號係經由 極-源極之間而施加於第而i2的開::10的汲 一 此日可,係將L位準的設定信號輸出至電^1νϊ 的汲極L係經由導通狀態的第2TFT] 2 德丨,/史之間而放電,並成為與設定信號相等的低- v)。如上述,於第2TFT]2的源極係連接有有 317094 14 1263186 機EL元件50的陽極,而設定信 ^ 構造之有機EL元件5〇 ::、电位係設定成二極體 儿丨卞〕u + w產生動作 至目前為止的有機E]L元件5〇 '’ 。因此,與 態及流入於元件之電流量淬關,陽極二況(導通非導通狀 的電荷係經由第2TFT12而放電,有機(^2TFT12的源極) 非動作狀態。此外,’·兀件50則處於 。的第2 +極丄的源極連接有保持電容 电本,而保持電容Cs的第2 + 2tfti2的源極電位)係固定於對庫二4Γ (第 位。 ‘此叹疋信號之設定電 、 保持黾谷Cs的第1電極連接於第 -於在選擇传泸成Λ Η你、隹U 、 丁12的間極,由 :此係經=:二:’第1tfti0為導通,因 電容Cs的第!電極:J固 位的預充電信號至此保持 及設定作 : ’糸預設定對應於預充電信號 1〇號的弘位差之電荷於保持電容CS。 旦預设定保持電容Cs,且成為預定時 籲將對應實際的顯示內 寸,則 I因此,於時至時;^f(VSlg)輸出至資料線 至> 可序t4為止之資料宜 將此資料信號(vslg)施加於第2電極皮定。, 之保持電容位 資料信號之電壓。 w Cs保持對應於 下降P4結束之後,於時序t4,選擇信號從H位準 容Cs>位準’第1TFT1G成為非導通,而結束對保持電 <對應資料信號的電壓之寫入(vs]g之設定)。 於時序Μ,降低選擇信號至非選擇^:準又而不導通第 317094 15 1263186 ]TFT10之後,考量f料之擷取寬格度 擷取資料之後使第1 TFT 1 Θ不導通 /、P為了在確只地 間P5。於經過此期間p5之後,*日士’而設定特定長度的期 示,輸出預充電信號至資料線DL^i5,如第3圖(a)所 電位(Vs】g)變更至預充電電位。此外=之’從資料信號 信號從設定電位提高至Η位準 +:,原線VL的電源 電夂Cs俘掊帝颅u 作电位。藉此,於保持 甩奋Cs保锊电壓Vgs的狀態下,電 亍狩 >位,並且電流對應所保持的電虔Vgsf"^'切換至動作電 5繁2 T F T1 9 ώΑ、 匕 攸琶源線V L·流涵 至弟2TFT12的没極源極之間,此電流被供鹿至右趟P通 件50的陽極。如此,於有機肛元件 ^有枝EL兀 次選擇像素為止,對應保持於保持電容^下:個圖場再 2TFT12的間極—源極間電麼)之電流、、甫貧料電塵(第 應電流量之亮度的發光。 ,而持績進行對 在此,由於電位偏移用電容Cp連 極,及供應選擇信號至此像素之選擇間 時序t4,去;n i罢尸。本丁价 之間’因此於 才斤 田逬擇仏唬下降至L位準,六 降,而產生要降低第2TTT12 M m ' P對應其下 顯示内交為「里而 的問極電位之動作。例如於 件50二1来^ 導通第2TFT12而設定有機紅元 時,只要保持電容。的保持 2TFT12的動作閣值即可。 U弟 為入蔞准门L 貝兄見,、月間,由於第2ΤΤΤΊ? 因此於選擇信號的下降時序,可往降低… 來偏移弟2TFT12的閘極電位,以, 、二 9丁FT] ?。F1丨卜叮、ii、* 、k的關閉第 因此可迅速且確實的實現黑色位準。 另外,電值偏移用電容Cp可以利用形成於第2丁咖 317094 16 1263186 之閘極與汲極間之所謂寄生電容。當然,亦可在此寄生電 容之外,另外形成與寄生電容電氣併聯的電容。此寄生電 容之電容值並非〇,而電位偏移用電容Cp和保持電容Cs 的電容比rc( = Cp/Cs)係為0<rc,且為了充分地發揮上述電 位偏移用電容C p的偏移功能’ 1· c係設定為0.3以上,例如 0.3左右或0.5左右。 當資料信號的黑色位準受到限制時,亦即,當由於資 料信號處理侧之電路之動作範圍等的要求而使黑色位準無 ® 法低於某程度以上時,則較宜提高電位偏移用電容Cp的 - 電容值,俾如上述使re為0 · 3左右以上(例如0 · 5左右)。 . 相反地,當能夠降低資料信號之黑色位準電位時,或是當 *如後述重視EL元件的壽命時,則較宜將電位偏移用電容 Cp的電容值縮小,例如設定成re為0.1左右◦當re成為 0.1左右時,雖然電位偏移用電容Cp的偏移功能變得非常 小,但能夠將資料信號的黑色位準電位設定成較低,從而 _謀求迅速且確實的黑色位準的實現。當電位偏移用電容Cp 較大時,雖然能夠於時序t4將第2TFT1 2確實地切斷不導 通,但當EL元件之陰極電壓Cv相對於選擇信號係相對較 低時,會因為Cp的存在,(特別是在選擇信號的Η位準期 間)第2TFT12之閘極電位相對於陰極電壓Cv會相對變 高,而有流通於EL元件50之電流量變多的傾向。第4圖 係針對當變化陰極電壓Cv時流通於EL元件之電流Io]ed 的特性,而分別顯示當Cp/Cs(rc)設為1/10時,以及當設 為3/1 0時,陰極電壓Cv與流通於EL元件之電流(動作電 317094 1263186 )Ioled之特定的變化。如第4圖所示,當cv變低時, 在Cp/Cs為3/10之一方,動作電流I〇kd相對於cv之電 壓變化的變化較大。例如,由於EL元件的經年變化,其 動作閾值會有變化,而EL it件之動作閾值的變化可以視 同由第2TFT12之閘極觀察之於第4圖中的cv的變化。 亦即、,由第4圖,當EL元件之動作閾值有了變化時,驅 動電流Ioled的變化會變大。當優先將會隨著供給電流量 變多而加速劣化的EL元件5〇的壽命予以延長的必要性較 南時^系期望將相對於此CV變化之驅動電流i〇ied的變化 予以鈿小,而較宜將Cp設定成較小。 元件軸5圖,來說明依序.驅動多數個像素而使 X先用之頭不裝置的全體動作。 各列的像素之動作係如上述所述,於輪 擇信號至第!列的選擇線GL之” φ輸出…立準的選 條資料線D L,並…φ ^ 出預充電信號至各 接下來輸出對庫第/號至第1列的電源線凡。 丁“乐1列的顯示内容 料線叫於第5圖中m ^ 的 >、料信號至資 保持電容Cs巾仅# 弟m仃的貝料線DL·為例),並於 第】列的選擇線I ?應資料信號的電壓。接下來設定 DL為預充雷二吻信號為L .位準後,設定資料線 位準的動作電:二設定$ 1列的電源線為Η 資料線DL成為預財平掃描_期間係例如為, 止之期間。為了 :电位之伋’再次成為預充電電位為 期間當中相對較長的二故:曰圖^ -疋戶、/V、上例如亦可設定為水 317094 18 1263186 平回描期間之較短期間。並以 行對保持電容Cs之資 电』間)為可充分進 二η·〜# 貝枓t唬VSlg的寫入期間 吕又疋该預充電期間。 ^间之方式,來 在此,於第1列的水平掃描期間姓 選擇線GL·,於下—_ σ、後,第1列的... (Position) The parent becomes the potential (H period P), as shown in Fig. 3 (4), the order is ~ to the data line DJL of the corresponding pixel.) The precharge signal is output VL. Specifically, for example, from the 9 Ί疋 signal to the power supply line), it is reduced to the *organic EL element. The potential is lower (the lower setting of the power signal bit: the cathode of the 0 is about the same as the continuation of the white 0 season 乂 low.疋 potential. By this, during the period of electricity. When the child/original line VL is put into the timing t2, the signal is selected, and the TPTM is selected, and the potential is raised to the selection and the first FT] is turned on. In this case, the selection signal becomes ίί bit DL. This pre-charge ^ : ^ pre-charge signal has been turned to the data line (in transistor C 2: can make the 2tfti2 reach the full conduction level. That is, the conduction of the ni / domain) The sufficiently high power does not depend on the high potential of the source-drain voltage-to-pole current Id. This is enough to cause the pre-charge signal to be applied between the pole and the source during the period P3. The opening of i2::10 is available on the same day, and the L-level setting signal is output to the gate of the electric ^1νϊ, which is discharged through the second TFT] 2 in the on state, and between / history. Becomes low - v) equal to the set signal. As described above, the anode of the second TFT]2 is connected to the anode of the 317094 14 1263186 EL element 50, and the organic EL element 5 of the configuration of the signal is:: the potential is set to the diode. u + w generates the organic E] L element 5 〇 ''. Therefore, the state and the amount of current flowing into the element are quenched, and the anode is in a state in which the non-conducting electric charge is discharged through the second TFT 12, and the organic (the source of the TFT2 is inactive). Then, the source of the 2 + + pole is connected to the source of the holding capacitor, and the source potential of the 2 + 2tfti 2 of the holding capacitor Cs is fixed to the bank 2 (the first bit. 'This sigh signal Set the electric current and keep the first electrode of Shibuya Cs connected to the first pole of the 泸 隹 隹 隹 隹 隹 隹 , , , , , , , , , , , , , , , , : : : : : : : : : : : : = : : = = ' 第 ' ' ' ' ' The electrode of the capacitor Cs: the pre-charge signal of the J-hold is kept and set to: '糸 preset the charge corresponding to the vacancie of the pre-charge signal 1 于 to the holding capacitor CS. The pre-set holding capacitor Cs And when it becomes a predetermined time, it will correspond to the actual display size, then I will, at the time of the time; ^f(VSlg) is output to the data line to > The data of the order t4 should be applied to the data signal (vslg) At the second electrode, the voltage of the retention capacitor bit data signal is maintained. w Cs remains corresponding to After the end of the falling P4, at the timing t4, the selection signal is turned off from the H-level permitting Cs > level '1st TFT1G, and the writing of the voltage (vs]g of the corresponding data signal is completed). In the timing Μ, lowering the selection signal to the non-selection ^: quasi-conducting and not turning on the 317094 15 1263186] TFT10, after considering the f-thickness of the f-material, the first TFT 1 Θ is not turned on, and the P is It is true that there is only P5. After the period p5, *日士' and set a specific length of the period, output pre-charge signal to the data line DL^i5, as shown in Figure 3 (a) potential (Vs) g Change to the pre-charge potential. In addition, the 'from the data signal signal is raised from the set potential to the Η level +:, the power line of the original line VL is captured by the Cs, and the potential is used. In the state of the voltage Vgs, the electric shovel > bit, and the current corresponds to the held electric 虔Vgsf"^' to switch to the action power 5 繁 2 TF T1 9 ώΑ, 匕攸琶 source line VL·流涵至弟Between the source and the source of the 2TFT12, this current is supplied to the anode of the right-handed P-passer 50. Thus, in the organic anal Piece ^ has a branch EL selects the pixel, corresponding to the holding capacitor ^: the current between the field and the source of the 2TFT12, the source of electricity, the poor current electric dust (the brightness of the first current) The illuminating. And the performance is carried out here, because the potential offset uses the capacitor Cp pole, and the supply selection signal to the pixel between the selection of the timing t4, go; ni ruin. Tian Hao chooses to drop to the L level, and the sixth drop, and the action to lower the 2TTT12 M m 'P corresponds to the action of displaying the internal intersection as the "internal potential". For example, when the second TFT 12 is turned on and the organic red element is turned on, the capacitor is held. Keep the 2TFT12 action value. U brother is in the entrance to the door L brother, see, in the month, due to the second ΤΤΤΊ? Therefore, in the descending timing of the selection signal, you can reduce... to offset the gate potential of 2TFT12, to, 2, 9 FT]? . The closing of F1, ii, *, k is so that the black level can be achieved quickly and surely. Further, the electric value shifting capacitor Cp can use a so-called parasitic capacitance formed between the gate and the drain of the second cookie 317094 16 1263186. Of course, in addition to this parasitic capacitance, a capacitor electrically connected in parallel with the parasitic capacitance can be formed. The capacitance value of the parasitic capacitance is not 〇, and the capacitance ratio rc (= Cp/Cs) of the potential offset capacitor Cp and the holding capacitor Cs is 0 < rc, and the potential offset capacitor C p is sufficiently utilized. The offset function '1·c is set to 0.3 or more, for example, about 0.3 or about 0.5. When the black level of the data signal is limited, that is, when the black level is not higher than a certain level due to the operation range of the circuit on the data signal processing side, it is preferable to increase the potential offset. Use the capacitance value of the capacitor Cp, as described above, so that re is about 0 · 3 or more (for example, about 0 · 5). Conversely, when the black level potential of the data signal can be lowered, or when the life of the EL element is emphasized as described later, it is preferable to reduce the capacitance value of the potential offset capacitor Cp, for example, set to re 0.1. When the left and right re re is about 0.1, the offset function of the potential shift capacitor Cp is extremely small, but the black level potential of the data signal can be set low, thereby achieving a fast and accurate black level. Implementation. When the potential offset capacitor Cp is large, although the second TFT 12 can be surely turned off at the timing t4, when the cathode voltage Cv of the EL element is relatively low with respect to the selection signal system, the Cp exists. In particular, during the Η level of the selection signal, the gate potential of the second TFT 12 is relatively high with respect to the cathode voltage Cv, and the amount of current flowing through the EL element 50 tends to increase. Fig. 4 is a graph showing the characteristics of the current Io]ed flowing through the EL element when the cathode voltage Cv is changed, and when Cp/Cs(rc) is set to 1/10, and when it is set to 3/1 0, The cathode voltage Cv and the current flowing through the EL element (action electric 317094 1263186) Ioled are specifically changed. As shown in Fig. 4, when cv becomes low, Cp/Cs is one of 3/10, and the change in the operating current I〇kd with respect to the voltage change of cv is large. For example, the operating threshold of the EL element may vary due to the aging of the EL element, and the change in the operating threshold of the EL element may be regarded as the change of cv in Fig. 4 as viewed by the gate of the second TFT 12. That is, from Fig. 4, when the operating threshold of the EL element is changed, the change in the driving current Ioled becomes large. When it is preferable to extend the life of the EL element 5A which is accelerated and deteriorated as the amount of supplied current is increased, it is desirable to reduce the change of the drive current i〇ied with respect to the change of the CV. It is preferable to set Cp to be small. The element axis 5 is a diagram for explaining the overall operation of driving a plurality of pixels in order to prevent the X from being used first. The action of the pixels of each column is as described above, and the signal is rotated to the first! The column selection line GL "φ output... the alignment selection data line DL, and ... φ ^ out the pre-charge signal to each subsequent output power to the library / number to the first column of the power line. The display content line of the column is called m ^ in Fig. 5, the material signal is to the retention capacitor Cs, and only the line DL of the younger m仃 is taken as an example, and the selection line I in the column is ? The voltage of the data signal should be. Next, set DL to pre-charge the second kiss signal to L. After the level is set, set the data line level of action power: two set the power line of $1 column to Η the data line DL becomes the pre-financial scan _ period is for example , the period of time. In order to : the potential 汲 ' again becomes the pre-charging potential for the relatively long period of time: 曰 图 ^ -, / / V, on the upper can also be set to water 317094 18 1263186 short period of the flat retrace period. And the line-to-hold capacitor Cs can be fully entered. η·~# Behr t唬VSlg is written during the period of the pre-charging period. The way between ^, here, in the horizontal scan of the first column, the last name selects the line GL·, below -_ σ, after, the first column
為土,乃成為非選擇^ J次擇線GL 描期間結束之後,第“二方面,於第1列的水平掃 再次選擇第丄I列的電源線VL,於下-個圖場至 位準的動作電位。 f於了使EL兀件發光之Η 掃"二…列的水平掃描期間結束而到達第2列的水平 W田期間,則首先如第所示 千 預充電電位,然後如第5圖表DL再次成為 嘹》 W㈦所不,輪出L位準的今宏, 唬至弟2列的電源線VL。之 ^ Η位準的e 交如弟5圖⑷所示,輸出 之第?τ 弟2列的選擇線GL,使第2列的傳辛 之弟2TFT12的源極(有機EL J )像素 才 Μ 1干的1%極)放電。接下 來如弟5圖(a)所示,從預充命+ 像丰白fl充[电位’輪出對應第2列的各 力,: 谷之電位的資料信號至資料線DL,並寫入 於弟2列的像素的保持電 曰笛。, ^ . τ ,. 寸%奋LS。一旦弟2列的選擇線gl "仅準向結束寫入時,則資料線DL·上升至預充& + 位’且第2列的電源線VL成為動作電位時,結束第= 的水平掃描期間。 Μ接下來的第3列的水平掃描期間,亦與上述第i列、 第-歹U目同,控制資料線DL、第3列的電源、線VL(參照第 圖(g))、及第3列的選擇線GL(參照第5圖⑴);而進行 317094 19 1263186 貢料線DL的預充電、電源線vl之—干 源線VL·的放電)、第2丁 °又疋电位的切換(電 充電、資料寫入、第=Γ的放電及保持電容的預 則開始發光(電源線===制及有驗元件 進行相同的驅動至m行η列的矩陣之〜牛)之後, 】個圖場的量之資料的寫入 :11列立為止,而進行 顯示。 成對應任思影像之發光 如上所述,於本實施型態 — I但於電源線VL週期性地輸出二::,^ 亦可例如於依序輪出選擇信號:哭;:二了號 -來設定各個水平回描期間等為資料輪出草二=用 號等,而組合邏輯_及⑼㈣ s支月匕信 由設置於面板外部之控制顯示用的驅動二亦可 從V驅動器220將其輸出。 °。寺來製作’並 ,在此,若顯示各個信號的電位之—例 電源信號的動作電位為7V,設定電位為0V:而:二 的預充電電位為7V,信號電位的最小電^ ^ 。唬 此外,此時的選擇信號之非選擇電位及選擇 :iV。 係設定為,第ITFT10的間極 ^之笔位差 大於該丁打的動作Hr須充分 有機-元件卿電位Cv,例如設 Ο V。获± % a a 又4人約〜3 V至 :, 疋各個信號的電位及電位差為如此偷 亚於上述般的時序輸出,可確實的驅動本實施型態=素 3I7094 20 1263186 電路。 . 電源線VL並不限定為於每一列 可訊令"十人&以a 丁 7工制的構成,亦 了叹疋订方向為共通。不過,於設定各行為共方 非如上述第3圖、第4圖所示之驅動方 、教 場期間中設置依序選擇各像素而寫入資料之二, 間),以及於此期間之後的元件發光期門、\之』間(位址期 才工制為,於位址期間之前,設定 心為 位後並寫入眘祖、,i 1 旁兒/原、在VL為設定電 1位。如方rr光期間控制為提高至動作電 又此的馬£動方法,亦可接 兔 ,連接電源線VL之電路構成。、^^之於列方向共通 •佔干如上所述’根據本實施型態,於元件發光期門中 位上升,亦可藉由而使第2TFTi2的源極電 應資料信讓lg)=:7有Γ功能,而安定的供應對 採用】]通道丁打為第;^幾,元件50°此外,由於 >相同極性之資料信號。 ,因此可利用與視訊信號為 再者,於對保持^>六 藉由輸出充分低的固::s之貧料信號的寫入期間中, 確實的寫入資料…二士之設定信號至電源、線凡,可 於保持電容Cs。 在ii匕,i句以 … ” 2TFT12,均可採用於 土而構成之弟】丁 FT10及第 雜質注入區域之、、以及源極·汲極之間具備低濃度 2 丁 FTU亦均可採用明的LD構造。此外,第】TFT]〇及第 置多數個通道F '京極;及極間的載體移動路經串聯設 &域之所謂的雙間極構造。尤其是,為了防 317094 2] 1263186 號的洩漏,第1TF丁10較理 止舄入於保持電容Cs之資料 想為採用雙閘極構造。 仗形成有有機EL元件之面板基板(元件基板)側,射出 來自方、有機EL兀件的光之底放射型顯示裝置中,一般而 言,當遮光性的上述電路元件數較多時,則無 =的Γ低。然而,若㈣本實施型態之顯示裝置於該底 放射型顯示裝置,則可驻ώ六 一 2個—。而 JT|曰由在1個像素設置2個電晶體及 二::;:Γ有機EL元件,即可降低]個像素區域内 二配線數至最小限度。因此可擴大1個像素 ”门:W至取大限度,而可實現開口率高的顯亍 衣置。因此,對於要求小型且高精 ^ 較小之面板,例如數位相機、小 =象素的面積 々卜— 主数位攝影機等之纖旦& 寺’本貫施型態之顯示裝置乃極為有利。由 Ή 因此可縮短絕對的配線長度 …J、支面板, A + W田^ $ 、進仃電源線VL的+ 位之所,胃的導通及非導通之控制,亦良儿的-电 形鈍化為最小限度。因此, 所造成之波 J稽由配線數輕少 低限度之像素電路元件,而實現顯示σ 、'、侣小至最 且高精細之開口率極高的顯示裝置。:夕貝不曾下降之小型 上述面板基板為相反之側往外部射出卉》丨亦可抓用從與 裝置。於此情況,亦可有效率的於相同制tt頂放射型顯示 而實現亮度變動極小,且為小 :”场成2個TFT, [圖式簡單說明] n七細之顯示裝置。 第】圖係顯示,驅動本發明的實施刑,t 件之]單位的像素之電路構成之圖式。土‘占之有機EL元 1263186 第2圖係顯; ,^ el顯示裝置二本發明的實施型態之主動矩陣型有機 μ 电路構成之圖式。 $ 3圖係每+ $ ^ m 第4圖伏^弟1圖的電路動作之時序圖。 第5圖=不CP/Cs之Cv-Ioied特性之圖式。 的全體動作;發明的實施型態之有機EL顯示装置 電路構成:圖式貝Γ白知的主動矩陣型有機EL顯示裝置之 第7圖係顯示習知的主動 其他電路構成之圖式。 EL蝻不裝置之 [主要元件符號說明] 第1TFT(切換用薄膜電晶體) 2〇 21 第2 TFT(元件瓶私田玆w _ 第 3TFT 50 顯示部 200 Η驅動器 220 陰極電位 Cs 電位偏移用電容 DL 間極線 Pvdd 重設線 VL 因應資料€ 『號之電壓 有機EL元件 驅動部(驅動器) 馬區動 保持電容 資料線 動作電源 驅動電源線For the soil, it becomes a non-selection ^J times after the end of the GL drawing period, the second part, the horizontal sweep in the first column again selects the power line VL of the third column, and the next field is up to the level The action potential f. After the EL element is illuminated, the horizontal scanning period of the second column ends and reaches the horizontal W field of the second column, first the first precharge potential as shown in the first, then 5 Chart DL once again becomes 嘹 W (seven), does not take the L-level of the current macro, 唬 to the second line of the power line VL. ^ Η position of the e-cross as the brother 5 picture (4), the output of the first? The selection line GL of the 2nd column of the τ brother makes the source (organic EL J) of the 2TFT12 of the second column of the second column discharge (1% pole of the dry 1). Next, as shown in Fig. 5(a), Pre-charge life + like a white fluff charge [potential' rounds out the corresponding force in the second column, the data signal of the valley potential to the data line DL, and written in the second column of the pixel to keep the electric flute. ^ . τ ,. Inch % LS. Once the selection line of the 2nd column gl " only the end of the write, the data line DL · rises to the precharge & + bit ' and the power line VL of the second column In the case of the action potential, the horizontal scanning period of the first = is ended. 水平 The horizontal scanning period of the next third column is also the same as the above-mentioned i-th column and the first-order U, and the power supply of the data line DL and the third column is controlled. Line VL (refer to FIG. (g)) and selection line GL of the third column (refer to FIG. 5 (1)); and precharge of 317094 19 1263186 tributary line DL, power line vl - dry source line VL (discharge), the second ° ° and 疋 potential switching (electrical charging, data writing, the first Γ discharge and the pre-charge of the holding capacitor start to illuminate (power line === system and the test component to perform the same drive to After the m rows and n columns of the matrix ~ cow), the data of the amount of the field is written: 11 is displayed until the display is completed. The illumination of the corresponding image is as described above, in the present embodiment - I, however, periodically output two::, ^ on the power line VL, for example, in turn, the selection signal is selected: crying;: two signs - to set each level of the retrace period, etc. for the data round out = the number Etc., and the combination logic _ and (9) (four) s monthly 匕 由 由 由 由 设置 设置 设置 设置 设置 设置 设置 设置 设置 控制 控制 控制The actuator 220 outputs it. °. The temple is made 'and, here, if the potential of each signal is displayed - the operating potential of the power signal is 7V, the set potential is 0V: and the precharge potential of the second is 7V, The minimum electric power of the signal potential ^ 唬 In addition, the non-selection potential of the selection signal at this time and the selection: iV is set such that the inter-electrode difference of the first TFT 10 is greater than the operation of the dicing Hr must be sufficiently organic - The component potential Cv, for example, is set to Ο V. It is ± % aa and 4 people are about ~3 V to:, 疋 The potential and potential difference of each signal are so sloppy as the above-mentioned timing output, and the driving mode can be surely driven. = prime 3I7094 20 1263186 circuit. The power cord VL is not limited to the configuration of each of the "10 people" and "a" system, and the direction of the sigh is common. However, in the driver's and teaching fields shown in the third and fourth figures, the setting of each of the behaviors is set to sequentially select each pixel and write the data, and the components after this period. Between the illuminating period door and the \" 』 (the address period is only working, before the address period, the heart is set and written into the ancestors, i 1 side / original, in VL is set to 1 electric. For example, during the control of the square rr light, the method of increasing the power to the motor can be connected to the rabbit, and the circuit of the power line VL is connected. The ^^ is common to the column direction. The type rises in the middle position of the light-emitting period of the component, and the source of the second TFTi2 can be made to have the function of lg)=:7, and the stable supply pair is used] ;^, element 50° In addition, due to > data signals of the same polarity. Therefore, it is possible to use the video signal as a further one, and in the write period of the holding of the negative signal of the solid::s, which is sufficiently low, the write data of the two ... Power supply, line, can maintain the capacitor Cs. In ii匕, i sentence to... ” 2TFT12, can be used in the soil to form the brother] Ding FT10 and the impurity injection area, and the source and the bungee have a low concentration of 2 D FTU can also be used The LD structure. In addition, the first TFT] and the first plurality of channels F 'Kingji; and the carrier moving between the poles are connected in series with the so-called double-interpole structure. Especially, in order to prevent 317094 2] In the case of the leak of the No. 1263186, the first TF 10 is considered to be a double-gate structure in the case of the holding capacitor Cs. The side of the panel substrate (element substrate) on which the organic EL element is formed is emitted from the side, the organic EL 兀In the case of the light-radiation type display device of the present invention, generally, when the number of the circuit elements having a light-shielding property is large, there is no depression. However, the display device of the present embodiment is in the bottom emission type. The display device can be stationed in ώ 2 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Minimize. Therefore, you can expand the 1 pixel "gate: W to take a large limit, but it can be Substantially right foot garment facing aperture ratio. Therefore, it is extremely advantageous for a panel which is required to be small and high-precision, such as a digital camera, a small = pixel area, a main digital camera, and the like, a Fibonacci & Therefore, the absolute wiring length can be shortened... J, the support panel, A + W field ^ $, the + position of the inlet power line VL, the conduction and non-conduction of the stomach, and the good-electrical passivation To a minimum. Therefore, the resulting waveform is realized by a pixel circuit element having a small number of wiring lines and a low number of pixel circuit elements, thereby realizing a display device having an extremely high aperture ratio of σ, ', and the smallest and highest fineness. : Xibei has not been reduced in size. The above-mentioned panel substrate is the opposite side to the outside, and the device can also be used. In this case, it is also possible to achieve a very small brightness variation with the same efficiency as the tt top emission type display, and it is small: "The field is formed into two TFTs, [a brief description of the drawing] n seven thin display device. The figure shows the circuit configuration of the pixel of the unit of the invention, which is driven by the implementation of the invention. The earth's organic EL element 1263186 is shown in Fig. 2, and the display device of the invention is the embodiment of the invention. The pattern of the active matrix organic μ circuit is constructed. The $3 graph is the timing chart of the circuit action for each + $ ^ m 4th diagram volt ^ brother 1 diagram. Figure 5 = Cv-Ioied characteristic of non-CP/Cs The overall operation of the present invention; the circuit configuration of the organic EL display device of the embodiment of the invention: Fig. 7 shows the pattern of the conventional active circuit configuration of the active matrix type organic EL display device [Main element symbol description] 1st TFT (switching thin film transistor) 2〇21 2nd TFT (component bottle private field w _ 3rd TFT 50 display unit 200 Η driver 220 cathode potential Cs potential shift Use the capacitor DL inter-pole line Pvdd to reset the line VL to respond to the data 『 The organic EL element driving unit (driver) movable holding capacitor Ma zone data line driving operation of the power supply line
3〇 100 21〇 CV3〇 100 21〇 CV
CP glCP gl
Rsl、s VSlgRsl, s VSlg
Vss 重設用電源 3I7094Vss reset power supply 3I7094
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