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TWI254432B - Solid cooling structure and formation thereof with integrated package - Google Patents

Solid cooling structure and formation thereof with integrated package Download PDF

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Publication number
TWI254432B
TWI254432B TW094101165A TW94101165A TWI254432B TW I254432 B TWI254432 B TW I254432B TW 094101165 A TW094101165 A TW 094101165A TW 94101165 A TW94101165 A TW 94101165A TW I254432 B TWI254432 B TW I254432B
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Taiwan
Prior art keywords
cooling structure
solid
package
heat
conductive
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Application number
TW094101165A
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Chinese (zh)
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TW200625568A (en
Inventor
Chun-Kai Liu
Jen-Hao Cheng
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Ind Tech Res Inst
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Priority to TW094101165A priority Critical patent/TWI254432B/en
Priority to US11/221,791 priority patent/US20060156737A1/en
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Publication of TWI254432B publication Critical patent/TWI254432B/en
Publication of TW200625568A publication Critical patent/TW200625568A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38—Cooling arrangements using the Peltier effect
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B21/00—Machines, plants or systems, using electric or magnetic effects
    • F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
    • F25B2321/02—Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
    • F25B2321/023—Mounting details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A solid cooling structure applied to a package with at least one die has a thermoelectric transfer module and a heat exchanger module. The heat exchanger module has two passive cooling devices thermally connecting and affixing the thermoelectric transfer module, respectively, in which one of them is in the proximity of the die. The heat generated by the die in operation flows from the closer passive cooling device into another passive cooling device, through the thermoelectric transfer module controlled under a power.

Description

1254432 七、 指定代表圖： (一） 本案指定代表圖為：第（二）圖。 (二） 本代表圖之元件符號簡單說明： 10主動冷卻結構 20固態冷卻結構 22a，22b被動冷卻結構 23散熱鰭片 24背板 八、 本案若有化學式時，請揭示最能顯示發明特徵的化學式： 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種固態冷卻結構、形成方法與其應用， 特別是有關於一種結合主動與被動之固態冷卻結構、形成方 法與其應用。 【先前技術】 隨著電子產品元件快速朝向高密度發展，如何將電子元 件例如CPU、LD、功率晶體產生的熱能迅速排除以使電路正 常運作已經成為不可忽視的重要課題。固態冷卻元件（solid state cooling dev ice)具有使用方便且低成本等各項優點， 因此成為常用的散熱元件之一。 1254432 一般的固態冷卻元件可分為被動冷卻（1 $主動冷卻（ac^ve _llng)方式。採用被動冷°=叫) 導熱，(heat spreader)，於其本身溫度彦境;^ 度，方提供散熱的功能。相反的，採用主動冷卻方孤 3 致冷器（thermal electrie eQQler)，於其本 於 二之f度時亦提供散熱的功能，且具有無污染、益=、-安 以5;=質輕的特色，因此深受電子元件，特別Vic封 m說j如於κ：封裝結構所需的散熱i统，一般採 具有既疋規格與形狀的熱電材料搭配散熱器。然而， 1C封裝結構的多樣化，獨立的熱電材 元 為1C封裝結構選用散熱系統的限制之一。k二^成 ίΐΓ封=，來之，組Λ與整體使用也是選用散以二 之一。舉例來况，一般熱電材料的機械強度相去 封裝結構固定或使用時易受到衝擊：破損。 有的熱阻，Af在愈多或愈大的 ^政”、、糸統的效此大打折扣。此外，獨立的埶電材料 體ί;ΐΐ = ίΐΚ封裝結構時，無法有效地縮：整體的 【發明内容】 八而ί 11刖技術中所存在之諸多問題，為了解決異質材料 構、形 法與其應用，將主動冷卻結構直接 φ ;彳動々部結構上或結合至形成被動冷卻結構的過程 傳導‘31異質材料介面存在或其範圍所造成的散熱或 於有效減〉、電子兀件之體積且同時兼顧散熱的效能， 豆仏一種結合主動與被動之固態冷卻結構、形成方法與 ? 了> 應用時直接形成於單—電子元件例如1C封裝結構 體體^ 頜外的組裝或固疋結構，如此可減少電子元件之整 1254432 根據上述之目的，基於本發一 中，一種固態冷卻結構，應用於—教^神所貫施的一實施例 (theoioelectnc)轉換模組1 一献上，其包含一熱電 含一第一被動冷卻結構盥一 M二、、、、^奐換組。熱交換模組包 (thermally connectlng)並固冓分別熱連接 卻結構鄰近熱源。苴中，去一+換拉組，第一被動冷 熱源所產生的熱經過第源f用於熱電轉換模組時， 至第二被動冷卻結匕= 熱電轉換模組傳送 -第-被動冷卻結構與複數個成方法係提供 卻結構之一第一表面上。钻者一構位於第一被動冷 第-表面上，其中每一熱電轉個熱:電轉換結構於 此外，提供-第二被動冷二I吳二f、對★應母一第-黏著結構。 第二被動冷卻結構之一第1 = f /、设數個第二黏著結構位於 盘每一篦-%装处 乂 上。黏著每一熱電轉換έ士禮 η母# 一黏者結構以形成固態冷卻結構。 謂換、，Ό構 根據上述之目的，基於本 應用時’整合固態冷卻結構施的：實施例 第—表面上。構位Γ第—被動冷卻結構之一 第一表面上，其中ϋ埶1 ec tri c)轉換結構配置於 一第二被動、人^ έ士姐Γ、包轉換、、、口構對應每一第一黏著結構。 卻結構之一第二表面上；再去，=構位於弟二被動冷 構上且母一熱電轉換結構與每一第二黏著結二· 【實施方式】 描述ί發：=會詳細描述如下。然而，除了詳細 明的I;圍可;廣泛Ϊ在其'的實施例施行，且本發 伹Φ、主二 、疋，、以之後的專利範圍為準。再者，為接 照以：⑵更解本發明’圖示内各部分並沒有依 張，不相關之細節部分也未完㈣出，以求圖示的簡潔被 1254432 ~ air,圖所示為根據本發明之實施例中所運用的一主動a Li fn示意圖。要說明的是，於第一圖所示的主動 i之―、a將反覆出現*於後續的其他圖示中，為簡化以利其他結 不再d見，後續其他圖示中顯示的主動冷卻結構'1〇 ί 不^不述與坪細描繪，但實際上所有圖示中的主動A 10其結構等同於第一圖中之所示。 、、Ό構 主要冷卻結構1() ’例如—熱電轉換模組， V Jlb(the雇1 electric eie_。以1254432 VII. Designated representative map: (1) The representative representative of the case is: (2). (2) The symbol of the symbol of this representative figure is briefly described: 10 Active cooling structure 20 Solid-state cooling structure 22a, 22b Passive cooling structure 23 Heat-dissipating fin 24 Back plate 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention. Nine, invention description: [Technical field of the invention] The present invention relates to a solid-state cooling structure, a forming method and an application thereof, and more particularly to a solid-state cooling structure combining active and passive, a forming method and an application thereof. [Prior Art] As electronic components rapidly develop toward high density, how to quickly remove thermal energy generated by electronic components such as CPU, LD, and power crystals to make circuits operate properly has become an important issue that cannot be ignored. The solid state cooling dev ice has advantages such as ease of use and low cost, and thus becomes one of the commonly used heat dissipating components. 1254432 General solid-state cooling components can be divided into passive cooling (1 $ active cooling (ac^ve _llng) mode. Passive cooling ° = called) heat spread, (heat spreader), in its own temperature; ^ degrees, provide The function of heat dissipation. On the contrary, the thermal electrie eQQler is used to provide heat dissipation when it is twice, and has no pollution, benefit =, -an 5; = light weight Features, so it is deeply affected by electronic components, especially Vic seals, such as κ: the heat dissipation required for the package structure, generally with a thermoelectric material with a specification and shape. However, with the diversification of the 1C package structure, the independent thermoelectric material element is one of the limitations of the heat dissipation system for the 1C package structure. k 二^成 ίΐΓ封=, come, the group and the overall use is also chosen to be one of the two. For example, the mechanical strength of a typical thermoelectric material is relatively easy to be impacted when the package structure is fixed or used: damage. Some thermal resistance, Af is more or more, and the system is greatly reduced. In addition, the independent electrical material ί; ΐΐ = ΐΚ ΐΚ package structure, can not effectively shrink: the overall SUMMARY OF THE INVENTION Various problems in the technology of the eleventh, in order to solve the heterogeneous material structure, shape method and its application, the active cooling structure will be directly φ; the structure of the 々 々 or the process of forming a passive cooling structure Conductive '31 heterogeneous material interface exists or its range of heat dissipation or effective reduction, the size of electronic components and heat dissipation at the same time, soymeal combined with active and passive solid-state cooling structure, formation method and When applied, it is directly formed in an assembly or solid structure of a single-electronic component such as a 1C package structure body, so that the entire component of the electronic component can be reduced by 1254432. According to the above object, based on the present invention, a solid-state cooling structure, An embodiment (theoioelectnc) conversion module 1 applied to the teaching of the gods, comprising a thermoelectric power including a first passive cooling structure, a M2, The heat exchange module package (thermally connectlng) and the fixed heat connection are respectively adjacent to the heat source. In the middle, the one to the + pull group, the heat generated by the first passive cold heat source passes through the first source f In the thermoelectric conversion module, to the second passive cooling crucible = the thermoelectric conversion module transmission - the first-passive cooling structure and the plurality of forming methods provide one of the structures on the first surface. The driller is located in the first passive On the cold-surface, each of the thermoelectrics is turned into a heat: the electric conversion structure is further provided, and the second passive cooling is provided, and the second passive cooling structure is provided. 1 = f /, set a number of second adhesive structures on each 篦-% of the disk. Adhesive each thermoelectric conversion gentleman η mother # a sticky structure to form a solid-state cooling structure. According to the above purpose, based on the application of the present invention, the integrated solid-state cooling structure is applied: on the first surface of the structure, on the first surface of the first-passive cooling structure, wherein the ϋ埶1 ec tri c conversion structure Configured in a second passive, person ^ gentleman sister, package conversion And the mouth structure corresponds to each of the first adhesive structures. However, one of the structures is on the second surface; and then, the structure is located on the passive structure of the second and the second thermoelectric conversion structure and each of the second adhesive junctions. Mode] Description ί发: = will be described in detail as follows. However, in addition to the detailed I; Wai can be widely practiced in its 'implementation, and the original 伹Φ, the main two, 疋, and the subsequent patent scope In addition, for the purpose of taking the following: (2) to explain the invention in the 'illustration, the parts are not in accordance with Zhang, the unrelated details are not finished (four), in order to find the simplicity of the icon is 1254432 ~ air, map Shown is an active a Li fn schematic diagram utilized in accordance with an embodiment of the present invention. It should be noted that the "active" of the active i shown in the first figure will appear in the following other figures. For the sake of simplicity, the other nodes are no longer seen, and the active cooling shown in the other figures is shown. The structure '1〇ί does not describe the fine drawing, but in fact all the active A 10 in the figure has the same structure as shown in the first figure. Main structure 1() ‘for example, thermoelectric conversion module, V Jlb (the hire 1 electric eie_.

電材二 11 ι；ί κ 1、 b 與 12(junctlon element)位於敎 埶ί材料% lb之末端（ends)，其中導電連接材料12a位於 之一端，導電連接材料12b位於Ub之一端， 接^料ι/目Γ 12a與12b係位於同一側但無連接，而導電連 12則位於並連接熱電材料Ua與m之另一端。一 f (el:ctrfca1i連接材料123 ·⑽· 一外部之輸出電源 ^put)3t^^t^(electr1cal power 另接。另一方面，母一導電連接材料12a或12b盥 也就1〇的熱電材料Ub或Ua的一端連接了 戶ΐίη電連接材料心或㈣由相鄰的主動冷卻結構1〇 兩偶t貫施中’每一熱電材/料ua貞仙係組成一對埶 '风杈仏 ^*/FI(electrical holes)，熱電材料 限於此了再/之金半導體材料構成以提供電子，然不 iii芦气，材料i2a、i2b與12,例如由-導 k a /、、，錫1黏著層9所組成，可作為熱電材料lla ^mally ln ser㈣但熱性上並聯 第一圖所不為根據本發明之實施例中所運用的一固態冷 1254432 卻結構側面示意圖。固態冷卻結構2〇包含埶交換桓細 兩被動冷卻結構22a、22b大致平行以及一或多個主動;人^ = 構10位於與配置於被動冷卻結構22a與22b之門，兑由、:二 動冷卻結構22a或22b鄰近主動冷卻結構1〇的‘;二f ?主動冷卻結構10之用並且與主動冷卻結構1〇 : = J 緣。於一實施例中，被動冷卻結構22與 以埶、白巴 好的，製作，其亦可兼具導電性，= 的金屬銅、鋁或合金銅、鋁。再者，被動;人^、9良好 ，主^冷卻結構1Q連接的介面可 7成° 22b 異於傳統如致冷器之固態冷卻元件，本發明: 2緣。 主動冷卻結構10結合於被動冷卻結 =|將 統致冷器中的陶曼基板，有助J減口 J显22以斗ft:，棄傳 造成的熱阻增加。此外，金屬或人i料t二t的存在所 因此對於散熱有增進之效。 <於傳、洗致々為中的陶瓷基板， 結構10連接或22b與主動冷卻 電性絕緣薄層，但由於此電性^為可能形成一 電性絕_之厚度糊，所^因此 熱藉片23只= G = f ，如複數個平行的散 動冷卻結構1〇接觸連接仁24相連’其-側與主, 從主動冷卻結構1〇 J，為—散熱器（heat Slnk)用， 的另一側將熱發散出去。:QW)進而從被動冷卻結構22a 的形狀，例如平板、散熱鰭片23可以為任意適合 鰭片/3的間距可相同或相5異，$等等。此外，兩相鄰散熱 可視設計所需而定。〆"放2鰭片23的數量與長度亦 苴一^ 被動冷卻結構22b，例如—，营立 ” 一侧與主動冷卻处 一V熱板（heat spreader)， (heat s〇urCe)鄰近，妾觸連接，另一側則與一熱源 接收熱源運作時所產生熱，並傳導 1254432The electric material 2 11 ι; ί κ 1, b and 12 (junctlon element) are located at the end of the 材料ί material % lb, wherein the conductive connecting material 12a is located at one end, and the conductive connecting material 12b is located at one end of the Ub, and the material is connected. The ι/mesh 12a and 12b are on the same side but are not connected, and the conductive connection 12 is located at the other end of the thermoelectric materials Ua and m. A f (el: ctrfca1i connection material 123 · (10) · an external output power ^put) 3t ^ ^ t ^ (electr1cal power is connected. On the other hand, the mother-conductive connection material 12a or 12b is also a thermoelectric One end of the material Ub or Ua is connected to the core of the electrical connection material or (4) by the adjacent active cooling structure 1 〇 偶 t 施 ' ' 每一 每一 每一 每一 每一 每一 每一 每一 每一 每一 每一 每一 每一 每一 每一 每一 每一 每一 每一^*/FI(electrical holes), thermoelectric materials are limited to this re-formed gold semiconductor material to provide electrons, but not iii, materials i2a, i2b and 12, for example, by -guide ka /,,, tin 1 adhesion The layer 9 is composed of a thermoelectric material lla ^mally ln ser (four) but thermally connected in parallel. The first figure is not a schematic view of a solid cold 1254432 structure used in the embodiment of the present invention. The solid state cooling structure 2 〇 includes 埶The exchanged two passive cooling structures 22a, 22b are substantially parallel and one or more active; the human body 10 is located adjacent to the gates disposed in the passive cooling structures 22a and 22b, and is adjacent to the active cooling structure 22a or 22b. Cooling structure 1〇'; 2f? active cooling structure 10 and And the active cooling structure 1〇: = J edge. In an embodiment, the passive cooling structure 22 is made of bismuth and white ba, which may also have electrical conductivity, = metal copper, aluminum or alloy copper, Aluminium. Further, passive; human ^, 9 is good, the main ^ cooling structure 1Q connection interface can be 7 ° ° 22b different from the traditional solid state cooling element such as refrigerator, the present invention: 2 edge. Active cooling structure 10 combined with The passive cooling junction =| will be the Tauman substrate in the cooler, which helps J to reduce the J to 22 to the bucket ft:, the thermal resistance caused by the abandonment increases. In addition, the presence of metal or human material t two t Therefore, it has an effect of improving heat dissipation. <Turning on the ceramic substrate of Yu Chuan and Shuo Zhi, the structure 10 is connected or 22b and the active cooling electrical insulating thin layer, but because of this electrical property, it is possible to form an electrical _ The thickness of the paste, so the thermal borrowing piece 23 only = G = f, such as a plurality of parallel diffusing cooling structures 1 〇 contact connecting the 24 connected 'its side and the main, from the active cooling structure 1 〇 J, for - On the other side of the heat sink, the heat is dissipated.: QW) and further from the shape of the passive cooling structure 22a, Plate, heat-dissipating fins 23 may be any suitable fin / space 3 may be the same or different 5, $ and so on. In addition, the two adjacent heat sinks are required for visual design.数量"The number and length of the 2 fins 23 are also a passive cooling structure 22b, for example, the "stand" side is adjacent to the active heat sink, a heat spreader, (heat s〇urCe), Touching the connection, the other side is connected to a heat source to receive heat generated by the heat source, and conducts 1254432

10 ° 22a A 心Ϊ尺，例_^形3 被動冷卻結構22a、2而^疋°ϋ本f =之精神，結合 〒，其中每個組件的數量;、= 斗寸別是依封裝》士槿的#斗 _置白可依口又汁所需而定， 構完成後再考量散埶^二，=，因此，有別於傳統於封裝結 接將熱電模組製作^散敖 ^明之精神所實現的實施例直 例/用ίΛίίκ構圖的為=康本f明之一固態冷卻結構實施 發明之精神=以二要說明的是，根據本 雙列直插式封裝（Duai in—丨彳°p ^亚不限於下述型式，其他例如10 ° 22a A heart ruler, example _^ shape 3 passive cooling structure 22a, 2 and ^ 疋 ° ϋ this f = the spirit, combined with 〒, the number of each component;, = 斗不别 depends on the package槿的#斗_置白 depending on the needs of the mouth and juice, after the completion of the structure, consider the 埶 埶 ^ 2, =, therefore, different from the traditional packaging and thermoelectric module production ^ 敖 敖 ^ Ming spirit The implemented embodiment is straightforward/constructed with ίΛίίκ = one of the solid-state cooling structures of Kangben f Ming. The spirit of the invention is implemented. According to the present invention, according to the dual in-line package (Duai in-丨彳°p) ^Asia is not limited to the following types, others such as

FP) ^ (Hn GrTd A ㈣Array，=y；/GA)、球栅格陣列封裝⑽i 述時，可^_4)推寻及=用;當此些實施例以單—晶片描 的封裝結構。般方法所實現的多晶片堆疊或排列 用於打線封裝結;'明之一固$冷卻結構實施例應 晶片，m定於一電路板W μ思圖。熱源..30，例如-運作中的 與電路板32之一表面±&導用導電線35連接熱源30 兩改搖π姦斗^衣面上的¥電塾（圖上未示）以使埶源30盥 ^ 3°3" # 〇 "4!^ 上。利用適當的古、/ p結構20覆盍於熱源30 compoimcO，覆蓋於固ί、二例社如隹利用塑封材料34(_ldlng 的散熱效果。 構的散熱設計，1且結合時可達到良好 參照第 圖為根據本發明之一固態冷卻結構實施例應 9 1254432 Ξ 向下’ cavity_down)封裝結構的剖面示意 連接熱Λ2與 ί f原3G與導電結構33。電路板32二Vi ΐ V私結構33亦配置於雷玖Q9七主π f „ h、男右卞 連接。將本發明之4生妯=1板 表 以與外界形成電性 法，例的t態冷卻結構2°以適當的方 3〇。如此的固能A_Mm2之另一表面上並接觸熱源 於整個構0應用於高散熱型封裝結構，利 型封裝結構的散熱設計，並且結合時可達到1FP) ^ (Hn GrTd A (four) Array, = y; / GA), ball grid array package (10) i can be used to refer to and use; when these embodiments are in a single-wafer package structure. The multi-wafer stacking or arranging implemented by the conventional method is used for wire bonding and packaging; the embodiment of the cooling structure is a wafer, and m is set on a circuit board. The heat source: 30, for example, is in operation with one of the surfaces of the circuit board 32 and the conductive wire 35 is connected to the heat source 30, and the electric power source (not shown) on the clothing surface is shaken to make埶源30盥^ 3°3"#〇"4!^ On. Use the appropriate ancient, /p structure 20 to cover the heat source 30 compoimcO, covering the solid, two examples such as the use of plastic sealing material 34 (_ldlng heat dissipation effect. The heat dissipation design of the structure, 1 and the combination can achieve a good reference The figure shows a cross section of a solid-state cooling structure according to an embodiment of the present invention, which should be connected to the enthalpy 2G and the conductive structure 33. The circuit board 32 ViVi ΐ V private structure 33 is also arranged in the Thunder Q9 seven main π f „ h, male right 卞 connection. The 4 妯 =1 plate table of the present invention forms an electrical method with the outside world, for example, t The cooling structure of the state is 2° in a proper square. The other surface of the solid energy A_Mm2 and the contact heat source are applied to the high heat dissipation type package structure, and the heat dissipation design of the package structure is achieved. 1

用於導線二(1 e :d為=3》J月^~固S卻立结構實施例應 利用-表面以適當的方法圖 '熱源30 定於固態冷卻結構2G之22b上。利用====、’固 〇面ίί圖4生tl)至導線架之内引腳36:: 效果。 欣…、叹彳亚且結合時可達到良好的散熱 參如第二D圖為根據本發明一 — 用於多晶片型+ 結構貫施例應 C圖中之導線架型封穿結構的，意圖。以第三 土住複辦線架 良好的散熱效果。 稱的放熱叹什，亚且結合時可達到 根據上述 本發明之精神所實施的固態冷卻結構2〇，其 10 1254432 二:τ適用於單-晶片 適用於晶圓級封裝、纟士禮μ神所貫轭的固態冷卻結構20亦 的各個被動冷卻結構22a、 f理解的，，固態冷卻結構2( 尺寸與數目等等的設計 」、主動冷卻結構10的形狀、 有效解決封裝結構之傳％的=構所周整，因此可以 空間。 的問通，亚且縮小整體元件的 疋’本貫施例雖以打線封裝ϋ]面^思圖。可以了解的 卻結構是可適合於各明^精神所實施的固態冷 外，此些實施例所；；=為一整體元件。此 單一晶片封裝時之S K m…=片^固^冷卻結構可以是進行 level)製程中未切g之構，或是於晶圓級（wafer 些實施例並未顯示控制主動= ί卻結構。再者，此 中，可利用-般的方法完“動於實際製程 熱性的材料，例如金屬d或^ 4G係、以具有良好導 其具有兩個相對表面4〇a盥 次丨、鋁或矽所形成， 何適當的形狀或尺寸如'愈一曰反40亦可以為任 晶片尺寸相近的方形。1次:於寸相近的圓形或與一 成-絕緣薄層45與内連接層(圖以〇之f面40a上先後形 層以形成内以 結構42上以作為後續黏著固\之用置於每個内連接 142與錫膏44即組 内連接結 12a、12b)。於另_實施例i 接材料12(或是 刻等適當步驟，移除部份&其 」於表面4〇a上進行微影蝕 用以固定黏著之用，如同第三中此外，亦可 之形狀。 〒厅而的被動冷卻結構22a 1254432 再者’絕緣薄層45可以剎田μΑ f的，亦可利用電鍍的方式形成ϋ结的方式形成。可以選 4〇的厚度非常薄，因此直 層45。由於絕緣薄層 ^ ，、了靶產生的熱阻是微乎其微的。 參照第四Β圖，於基板4〇 刻等適當步驟，移除部份的AU的另—表面40b上進行微影蝕 半導體加工或精密機械加工^ 0,’例如利用微機電加工、 熱鰭片23。連接散熱鰭片3 ^成若干彼此隔離的散 24。另一方面，將主動冷卻处底^卩，剩餘的基板40即為背板 以適當的方式，例如濺鍍、° 上且件熱電材料lla、llb、 亡：其次’主動冷卻結構寻方式配置於錫膏44 疋父錯式、對立式或其他人的 上的排列方式，可以 錫膏44以達到黏著固定，如3 ；^歹^式。之後，利用回銲 結構25。 凡成固恕冷卻結構20的部分< 動;含;:以結構5。，其中被 四j圖的，於被動冷卻結構mm構50中。相似於第 緣薄層51與内連接層（圖上 ，面46a上依序形成絕 的内連接層以形成内連接纟=)，例如一金屬層。移除部分 H構47上。再者，内連接、ί構内配4f 3個内連 源30之上方以縮短操作時熱流的路么構47大致位於熱 ® t i ；i"5D〇 ® ® 50 β 結構50之錫膏49、H=主構！0配 置於封裝 於電路板32的另一夺面卜復晶的方式。可以理解的， 式，配置若干導電結^ 33: 1 ^方的方式，例如植球的方 封裝結構50與結‘ 25。栌攄行：銲處理以固定與黏著 固態冷卻結構於製作時，可明之精神所實施的 時無需傳統的機械方式或冷，構之結合固定 能產生的熱阻與熱點問題。、° σ以固定，如此減少可 12 1254432 除了根據上述步驟形成包含Α Λ 發明之精神所實施的固能；人 二二;，的封t元件外，本 結構與封裝結構結合。第五獨形成後再將整個 另一固態冷卻結構實施例製“整本發明之 意圖。與前-實施例不同之處，表昭第五剖面示 冷卻結構22b。類似的，以前 二2構中的被動 51、内連接結構47與錫膏依序形成絕緣層 或_於被動冷卻結兩表者面=導電連接材料12、12a 配置主動冷卻結構10的適去 之後，利用前述 件配置於錫膏49上再丄適回义理= 本實施例中的被動冷卻結構2 ^二可再者盘可以選擇的， 52(m〇ldlng frame)結合後再後户塑封框架 10之步驟中，如第六圖所示。 、’貝-置主動冷卻結構 ^ η # ^ ^ ^ ^ ^ 1 將第五A圖與第五B圖之 動冷4構10。之後， 加以固定，再與電路板32上之二，利用回鲜將其 之後，利用塑封材料34將固態冷卻二二间气弟五。圖所 路板32上，如第五D圖所示。。7…冓口疋並黏著於電 需要強調的是，以ti i。 非用以限定本發明之請求本=之較佳實施例，並· 知本技術領域之專門人士應可明睁及I日Γ以六之描述對於熟 ，發明所揭露之精神下所完其他未脫離 在下述之請求專利範圍中。 、 又或伶飾，均應包含 【圖式簡單說明】 本發明的許多觀點可以表考 3。相關圖示並未依比例繪製 加清楚的了 有關定理。此外，❹數字來表發明 第一圖所示為根據本發明之實施例中所運用的—主動冷 ^54432 部結構側面示意圖 1二圖=為根據本發明之實施例中所 卻結構側面示意圖。 運用的一固態冷 打線圭仏结構I勺明之一固態冷卻、结構實施例應用於 高散：以JI $據本發：之-固態冷卻結構實施例應用於 月文…、土（八至向下，cavlty—down)封裝結構的剖面示意圖。 導線 ί ^ ( Lilr^^ ^ ^ ^ ^ ^ ^ 多晶片=賴例應用於 施例製作時^f態冷卻結構實 Φ 實施«、冷卻結構 構的本發明之—實施韻提供之—被動冷卻結 14 1254432 【主要元件符號說明】For the wire two (1 e:d = 3) J month ^ ~ solid S but the vertical structure embodiment should use - surface in a proper way diagram 'heat source 30 is set on solid state cooling structure 2G 22b. Use === =, 'Fixed surface ίί Figure 4 raw tl) to the lead 36:: effect inside the lead frame. Xin..., sighs and can achieve good heat dissipation when combined. The second D picture is according to the present invention - for the multi-wafer type + structural embodiment, the lead frame type sealing structure in the C picture, . Responsible wire rack with the third earth has good heat dissipation effect. The so-called exothermic sigh, sub-and combination can achieve the solid-state cooling structure 2根据 implemented according to the spirit of the present invention, 10 1254432 2: τ is suitable for single-wafer for wafer level packaging, gentleman The solid-state cooling structure 20 of the yoke is also understood by the respective passive cooling structures 22a, f, the solid-state cooling structure 2 (the design of size and number, etc.), the shape of the active cooling structure 10, and the effective resolution of the package structure. =Construction is complete, so it can be space. The communication, the sub-and the reduction of the overall component of the 疋 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 ^ ^ ^ ^ 。 。 。 。 。 。 。 。 。 。 。 Except for the solid state cooling, these embodiments are;; = is an integral component. The SK m...=chip cooling structure of the single wafer package may be uncut in the level) process, or At the wafer level (wafer some embodiments do not show control active = ί but structure. In addition, here, you can use the general method to complete the material that is moving to the actual process heat, such as metal d or ^ 4G, To have a good guide, it has two relative The surface is formed by a layer of aluminum, aluminum or tantalum. The appropriate shape or size such as 'the more the reverse 40 can also be a square with a similar wafer size. 1 time: round or close to the inch - an insulating thin layer 45 and an inner connecting layer (the layers are sequentially formed on the f-face 40a of the crucible to form an inner portion on the structure 42 for subsequent adhesion, and are placed in each inner joint 142 and the solder paste 44, ie, within the group Connecting the junctions 12a, 12b). In another embodiment, the material 12 is bonded (or the appropriate step is removed, and the portion & is removed) on the surface 4〇a for micro-etching to fix the adhesion, as In addition, the third shape can also be a passive cooling structure 22a 1254432 in the hall. The insulating thin layer 45 can be formed by the method of forming a knot by electroplating. The thickness is very thin, so the straight layer 45. Due to the thin layer of insulation, the thermal resistance generated by the target is negligible. Referring to the fourth figure, the substrate 4 is engraved and other appropriate steps to remove part of the AU. - micro-etching semiconductor processing or precision machining on surface 40b ^, 'for example using micro-electromechanical plus The heat fins 23 are connected to the heat dissipating fins 3^ into a plurality of mutually isolated dispersions 24. On the other hand, the active cooling is performed, and the remaining substrate 40 is the backing plate in a suitable manner, such as sputtering, ° The upper and lower thermoelectric materials lla, llb, and dying: secondly, the 'active cooling structure locating mode is arranged on the solder paste 44 疋 father's wrong type, the opposite type or the other person's arrangement, and the solder paste 44 can be used for adhesion fixation, such as 3; ^歹^. After that, the reflow structure 25 is utilized. The part of the cooling structure 20 is <moving;containing;: by structure 5., which is four-figure, in the passive cooling structure mm structure 50 in. Similar to the first edge thin layer 51 and the inner connecting layer (in the figure, the inner connecting layer is sequentially formed on the surface 46a to form an inner joint 纟 =), for example, a metal layer. Part of the H-frame 47 is removed. Furthermore, the internal connection, the inside of the 4f 3 interconnect sources 30 to shorten the heat flow during operation 47 is generally located in the thermal® ti; i" 5D〇® 50 β structure 50 solder paste 49, H = main structure! 0 is placed in another way of encapsulating on the circuit board 32. It can be understood that, in a manner, a plurality of conductive junctions are arranged in a manner of, for example, a square package structure 50 and a junction ‘25. Minhang: Welding treatment to fix and adhere to the solid-state cooling structure, the spirit of the realization can be implemented without the need of traditional mechanical means or cold, combined with the thermal resistance and hot spots caused by the fixed structure. , ° σ is fixed, so reduced 12 1254432 In addition to the solid-state energy embodied in the spirit of the invention according to the above steps, the structure is combined with the package structure. After the fifth single formation, the entire other solid-state cooling structure embodiment is made "the whole invention. The difference from the former-embodiment, the fifth section of the table shows the cooling structure 22b. Similarly, in the previous two structures Passive 51, inner connecting structure 47 and solder paste sequentially form an insulating layer or _ passive cooling junction two surface = conductive connecting material 12, 12a after the active cooling structure 10 is disposed, using the aforementioned components in the solder paste In the embodiment, the passive cooling structure 2 can be selected, and the 52 (m〇ldlng frame) is combined with the step of molding the frame 10, such as the sixth figure. Shown, 'Bei-set active cooling structure^ η # ^ ^ ^ ^ ^ 1 The fifth A diagram and the fifth B diagram of the dynamic cooling 4 structure 10. After that, fixed, and then with the circuit board 32 After using the fresh-returning, the solid-state cooling is used to cool the solid two of the two brothers by using the plastic sealing material 34. The road board 32 is shown as the fifth D figure. 7... The mouth is smashed and adhered to the electricity to be emphasized. Yes, in the preferred embodiment of the present invention, which is not intended to limit the present invention, and Specialists in the field should be able to include the following paragraphs in the spirit of the invention, and the other aspects of the invention are not excluded from the scope of the claimed patents. BRIEF DESCRIPTION OF THE DRAWINGS Many aspects of the present invention can be referenced to 3. The related drawings are not drawn to scale and the related theorems are clearly understood. In addition, the first figures of the invention are shown in the first embodiment of the present invention. Side view of the structure of the active cold ^54432 structure 1 2 is a schematic side view of the structure according to the embodiment of the present invention. A solid-state cold-wired structure I use a solid-state cooling, structural embodiment applied to high散: According to the JI $ according to the present invention: the solid-state cooling structure embodiment is applied to the cross-section of the package structure of the moon..., earth (eight to down, cavlty-down). Wire ί ^ ( Lilr^^ ^ ^ ^ ^ ^ ^ Multi-wafer = Lai case applied to the production process ^f state cooling structure real Φ implementation «, cooling structure of the invention - implementation of rhyme provided - passive cooling junction 14 1254432 [main component symbol description]

8 導電連接層 9錫膏黏著層 10主動冷卻結構 11 a，11 b熱電材料 12導電連接材料 12a，12b導電連接材料 20固態冷卻結構 22a，22b被動冷卻結構 23散熱鰭片 24背板 25結構 • 30熱源 32電路板 3 3導電結構 34塑封材料 35導電線 36内引腳 40基板 40a，40b 表面 42内連接結構 44錫膏 4 5絕緣薄層8 conductive connection layer 9 solder paste adhesion layer 10 active cooling structure 11 a, 11 b thermoelectric material 12 conductive connection material 12a, 12b conductive connection material 20 solid state cooling structure 22a, 22b passive cooling structure 23 heat sink fin 24 back plate 25 structure 30 heat source 32 circuit board 3 3 conductive structure 34 plastic sealing material 35 conductive wire 36 inner pin 40 substrate 40a, 40b surface 42 inner connecting structure 44 solder paste 4 5 insulating thin layer

_ 47内連接結構 49錫膏 50封裝結構 51絕緣層 52塑封材料 15_ 47 internal connection structure 49 solder paste 50 package structure 51 insulation layer 52 plastic packaging material 15

Claims (1)

1254432 申巧專利範圍： ^ .種固態冷卻結構，應用於一熱源上，該固態冷卻結構包 一熱電（thermoelectric)轉換模組；及 盥-；熱交,t灵組，該熱交換模組包含一第一被動冷卻結構 m f厂被動冷卻結構分別熱連接（thermally connectlnJ 、^该熱電轉換模組，該第一被動冷卻結構鄰近埶源· 的教it兮ί 一電源應用於該熱電轉換模組時，熱源所’產生 二被構被動冷卻結構與該熱電轉換模組傳送至該第 專利範圍第1項所述之固態冷卻結構，|中該埶帝 複數個熱電材料與複數個導電連接“：：其、； 、，=T複數個導電連接材料用以連接相鄰 ^ 亚且與該電源連接。 μ幻仕兩3熱電材枓 3·如申請專利範圍第2項所述之固能冷名 ΪΚ換模組而言’該複數個熱電“之““4= i ^ ^ ^ t„ 直1 4東、包材枓亚且鄰近該熱交換模組。 圍第2項所述之固態料卩_， 二兒材枓包含以不同的兩導電性材料 τ母a亥 兩部分藉由該複數個導電連接材料 ^ 卩分，其中該 聯的關係。 何杆壬兒性上串聯且熱性上並 6干如申請專利範圍第5項所述之固離冷 电性材料包含N型半導體材料與p型V導’。其中該兩導 7導電211㈣H令卻結構，里中任兮 兒運接材枓係以金屬導電性材料形成。苒其中任一邊 8·如申請專利範圍第卜員所述之固態冷卻結構，其中該第一 16 1254432 =動冷卻結構包含—電絕一 緣部分介於該熱電轉__料熱^之^V其中該電絕 9.如申請專利範圍第8項 士 緣部分係以金屬材料表面電^ I结成其中該電絕 項所述之固態冷卻結構，其中該導 it ®g ^ 11¾ # smk)，該;有一燒結表面的一金屬散熱器（heat "&、、Ό表面鄰近該熱電轉換模組。 冷，，其中該第 _，該介電表面鄰^熱屬散熱器(― 二被第上項所述之固態冷卻結構’其中該第 絕緣部又八二，包含一電絕緣部分與一導熱部分，其中該雷 σ刀；丨於该熱電轉換模組與該導熱部分之間。 絕έ彖邻^ 專^範圍帛1 4項所述之固態冷卻結構，其中該電 '象科係以金屬材料表面電《燒結等方式形I。中Λ" ί6部夂項所述之固態冷卻結構，其中該導 熱部乂4。項所述之固態冷卻結構，其中該導 二被上;員所述之固態冷卻結構’其中該第 表面且另一側具有複數個金屬散熱鰭片，該燒結 17 1254432 近該熱電轉換模組。 L9該ΪΓί::1!圍第項所述之固態冷卻結構，其中相對 行的位遠複數個金屬散熱鰭片之間係呈相互平 Ht請專利範圍第1項所述之固態冷卻結構，里中該第 包含一合金基板，該合金基板之-側以 範圍第20項所述之固態冷卻結構，其中相對 行的該複數個金屬散熱縛片之間係呈相互平 22· 一 整合封裝與冷卻結構的封裝系統，包含： — 衣模組，該封裝模組具有一熱源； ^=(thermoelectric)轉換模組；及 -第—:、=!莫=熱交換模組包含一第 固f分別ί連接(the而lly c_奶並 與該熱電^模心1线冷卻結構介於該封裝模組 的該熱電轉換模組時，該熱源所產生 二被動構被動冷卻結構與該熱電轉換模組傳送至ί含 ί系i中人述之整合封裝與冷卻結構的封 結構盘一权且更包含一電路板、複數個導電連接 電路板之二表面，^^^ing c〇mp〇und) ’其中該熱源位於該 板與該熱源广並且該電性連接該電路 導電連接結構上。* ’才刀该表面、該熱源與該 ί 7么:範圍第23項所述之整合封裝與冷卻处構的抖 衣㈣’其中该塑封材料更位於該第一被動冷卻結封 18 1254432 2壯5.如申請專利範圍第23項所述之整合封裝與冷卻結構的 :另，表;:該電路板更包含複數個導電球配置於該電路板 Ϊt申ΐ專利範圍第23項所述之整合封裝與冷卻結構的封 ϋ♦面i中該電路板更包含複數個導電球配置於該電路板 ϊ系整合難與冷卻結構的封1254432 Shen Qiao patent scope: ^. Solid-state cooling structure, applied to a heat source, the solid-state cooling structure includes a thermoelectric conversion module; and 盥-; heat exchange, t-ling group, the heat exchange module includes A passive cooling structure of the first passive cooling structure mf factory is thermally connected (thermally connected, and the thermoelectric conversion module, the first passive cooling structure is adjacent to the source of the power supply, and a power source is applied to the thermoelectric conversion module The heat source generates a passive structure of the passive structure and the thermoelectric conversion module is transferred to the solid-state cooling structure described in item 1 of the patent scope, wherein the plurality of thermoelectric materials and the plurality of conductive connections are:: The plurality of conductive connecting materials are connected to the adjacent power source and connected to the power source. μ 幻仕2 3 thermoelectric materials 枓 3 · The solid energy cold name as described in claim 2 In the case of a replacement module, 'the plurality of thermoelectrics' "4= i ^ ^ ^ t„ Straight 1 4 East, and the material is adjacent to the heat exchange module. The solid material described in item 2 _ , two children's materials contain different The conductive material τ mother a hai two parts are divided by the plurality of conductive connecting materials, wherein the relationship is the same. The rods are connected in series and thermally combined and dried as described in claim 5 The solid-free cold-charged material comprises an N-type semiconductor material and a p-type V-conductor. The two-conductor 7-conducting 211 (four) H-structure is formed by a metal-conducting material. 8. The solid-state cooling structure as described in the applicant's patent scope, wherein the first 16 1254432 = dynamic cooling structure comprises - the electrically-extinguishing portion is interposed between the thermoelectric conversion and the thermal current 9. If the part 8 of the patent application scope is formed by the surface of the metal material, the solid-state cooling structure described in the electric item, wherein the conduction is ® g ^ 113⁄4 # smk), there is a sintering a metal heat sink on the surface (heat "&, the surface of the crucible is adjacent to the thermoelectric conversion module. Cold, wherein the first, the dielectric surface is adjacent to the heat radiator ("two is described in the above item Solid state cooling structure 'where the first insulating part is eighty-two The utility model comprises an electrically insulating portion and a heat conducting portion, wherein the lightning slag knife is disposed between the thermoelectric conversion module and the heat conducting portion, and the solid state cooling structure described in the above paragraph The electric system of the invention is a solid-state cooling structure according to the method of sintering, such as the method of sintering, wherein the heat conduction portion is a solid-state cooling structure according to the item, wherein the guide The solid-state cooling structure described in the above section, wherein the first surface and the other side have a plurality of metal heat-dissipating fins, and the sintered 17 1254432 is adjacent to the thermoelectric conversion module. L9 The 固态ί::1! The solid-state cooling structure described in the above item, wherein the relative rows of the plurality of metal fins are flat with each other. The solid-state cooling structure described in the first item of the patent scope, The first comprises an alloy substrate, and the side of the alloy substrate is the solid-state cooling structure according to the item 20, wherein the plurality of metal heat-dissipating sheets of the opposite row are flat with each other. The structure of the package system comprises: - a clothing module, the package module has a heat source; ^ = (thermoelectric) conversion module; and - the first: =, =! Mo = heat exchange module contains a first solid f respectively When the lly c_milk and the thermoelectric ^1 core cooling structure are interposed between the thermoelectric conversion module of the package module, the passive source generates a passive structure of the passive cooling structure and the thermoelectric conversion module transmits The structure of the package structure of the integrated package and the cooling structure described in the specification of the present invention includes a circuit board and two surfaces of a plurality of conductive connection boards, ^^^ing c〇mp〇und) a heat source located on the plate and the heat source is wide and the electrical Connect the circuit to the conductive connection structure. * 'Knife the surface, the heat source and the λ7: the integrated package and cooling structure described in the 23rd item (4)' wherein the molding material is located at the first passive cooling junction 18 1254432 2 5. The integrated package and cooling structure according to claim 23, wherein: the circuit board further comprises a plurality of conductive balls disposed on the circuit board, and the integration described in claim 23 The package and the cooling structure of the package ♦ the surface of the circuit board further includes a plurality of conductive balls disposed on the circuit board, the system is difficult to integrate with the cooling structure ίί"ΐί：^^^ 該該導線架之複數個内引腳與該熱源， 上。材枓匕復该複數個内引腳、該熱源與該導電連接^才^ ί系整合封裝與冷卻結構的封 裝系統申^=叙與冷卻結構的封 中=圍第^項所述之整合封裝與冷卻結構的封 亥弟-破動冷卻結構更固定於該電路板上構的封 ί系項所述之整合封裝與冷卻社構的私 導電連接材«組=數個熱電材以 鄰的任兩該熱電材料^與接電連接材料^連接相 ί·系ί申3;;圍4,斤述之整合封裝與冷卻、… 對以熱交換模組而言，該複數個熱;; 19 1254432 間呈彼此平行的位置關係。 Ϊ ；' 2 ί ；：! ® I i3^：^ ^ ^ ^ ^'p ^ ^,, 鄰近該熱交換模组 連接材㈣直任—該熱電材料並且 ^5么3申請專利範圍$ 33項所述之整合封裝盘 A:其中每一該熱電材料包含以不同的兩、封 性上串聯且熱性上並聯的關係。 彳弘連接材枓呈電Ίί"ΐί:^^^ The plurality of inner leads of the leadframe are connected to the heat source. The plurality of inner leads, the heat source and the conductive connection are integrated, and the package system of the integrated package and the cooling structure is integrated with the package of the cooling structure. The sealed structure of the cooling structure is more fixed on the circuit board, and the private conductive connecting material of the integrated packaging and cooling society described in the series of the system is a group of several thermoelectric materials. The two thermoelectric materials are connected to the electrical connection material ^ · · ί 3 3;; 4, the integrated package and cooling, ... for the heat exchange module, the plurality of heat;; 19 1254432 The positional relationship is parallel to each other. Ϊ ;' 2 ί ;:! ® I i3^:^ ^ ^ ^ ^'p ^ ^,, adjacent to the heat exchange module connection material (4) directly - the thermoelectric material and ^5 3 application patent range of $ 33 items The integrated package disk A: wherein each of the thermoelectric materials comprises a relationship of two in different seals, a series connection in thermal conductivity, and a thermal parallel connection.彳弘 connection material is electric $·李Ϊί 1*，祀圍第35項所述之整合封裝與冷卻社構的料 ΐ中ϋ利範圍第3 3項所述之整合封裝與冷卻-構的私 一’其中任—該導電連接材料係以金屬導電^封 ί ΐϊί，構的封 :其中該電絕緣部分介於該熱電轉換模組 巧丨如申請專利範圍第38項所述之整合 ;成其t該電絕緣部分係以金屬材料‘面 以與冷卻結構的封 ^系以2ίΐίΙί^^= 一卻結構的封 仏如申請專利範圍第22項所述之整合封裝與冷卻結構的封 20 1254432 裝系統，其中該第一被動冷卻結構係為具有一燒結表面 金屬散熱器（heat sink)，該燒結表面鄰近該熱電轉換模組。 43:如申請專利範圍第22項所述之整合封裝與冷 其中該第一被動冷卻結構係為具有一介電表面的一 至屬政熱器（heat sink)，該介電表面鄰近該熱電轉換模組。 ^二如申請專利範圍第22項所述之整合封裝與冷卻处 統，其中該第二被動冷卻結構包含一電絕緣部 2 = g，其中該電絕緣部分介於該熱電轉換模組與該/導熱二 44項所述之整合封裝與冷卻結構的封 衣不統，其中該電絕緣部分係以導熱性材料形成。 ）玄了 十if利範圍第44項所述之整合封裝與冷卻結構的封 衣糸統，其中該導熱部分係以金屬材料形成。 苒的封 t士7么ί申請專利範圍第44項所述之整合封裝與冷卻处槿的私 衣不、、先，其中該導熱部分係以合金材料形成。 σ冓勺封 ^8·糸t申請專利範圍第22項所述之整合封裝與冷卻結槿的 ^板之，其中該第二被動冷卻結構包含一金屬基板，Q全屬ΐ 具有一燒結表面且另一側具有複數個金屬；if 片結表面鄰近該熱電轉換模組。 ”、、·、、、曰 片之間係該複數個金屬散熱韓 5裝0系ί申乂2項所f么整;f封裝與冷卻結構的封 片，兮枯側具有一燒結表面且另一側具有複數個金屬金 w、义結表面鄰近該熱電轉換模組。 、…政…、鰭 21 1254432 申以裝以卻結構的封 片之間係呈相互平行的位置關係。。忒歿數個金屬散熱鰭 =二如申請專利範圍第22項所述之敕人 衣糸統，其中該熱源至少包含一晶片正。〇 '于衣舁冷卻結構的封 53.—種形成固態冷卻結構的方法，包含. 配H數個熱電（th伽electHc)轉換 提t Γ該熱電轉換結構對應每—該第。― 二被t冷—卻口之 黏著每-該熱電轉換結構與每_該第二黏著結構。 法4.ncn5!項所述之形成固態冷卻結構的方 ^數個金屬結構配置於該二ίΐ;供；弟一表面； 著4成;么電凸塊於每-該金屬結構上％ ” 一為 、-構匕3母-該導電凸塊與對應的該金屬結構。以弟钻 5成6複數個麵熱料基板以形 法，i5白項所述之形成固態冷卻結構的方 法，第54項所述之形成固態冷卻結構的方 ”中t成该導電凸塊係包含以印刷的方式進行。… im專第54項所述之形成固態冷卻結構的方 。匕设一塑封材料於該熱導性基板之周圍。 22 ί254432 59·如申凊專利範圍第項所述 ^ 、 法’更包含燒結處理該第一表面。 ^成固態冷卻結構的方 60·如申请專利範圍第μ項所述 法，更包含形成一絕緣層於該第一表面形匕成固態冷卻結構的方 61·如申請專利範圍第53項所述 ^ 法，其中該配置步驟包含：、 形成固態冷卻結構的方 形成複數個第一導電連接材料於誃 形成複數個熱電材料於該複數個 形成複數個第二導電連接姑料 V弘連接材料上；及 :任巧鄰之兩該熱電材料藉由任」該;复5，、:材料上，其 一該第二導電連接材料連接。 X弟冷电連接材料或任 L1 2 3·，二項所述之形成固態冷卻結構的方 與電鍍:;法:亥形成步驟係選自下列族群之-:雜Σ2 63·如申請專利範圍第 法，其中形成該複數個敎電材料勺i八形成固態冷卻結構的方 部分與複數個P型導電性;材、枓t形成複數個N型導電性 :，圍、5弋項所述之形成固態冷卻結構的方 被動冷卻結構的步驟包含： 形i複基板提供該第二表面； 金屬結構配置於該第二表面上；及 著結每^H+每 —該金屬結構上，其中每—該第二黏 〇母該V电凸塊與對應的該金屬結構。 23 1 項所述之形成固態冷卻結構的方 2 成複數彳ί離该弟二表面之部分該具熱導性基板以形 3 f政熱4片於該具熱導性基板上。 4 • 叫專利範圍第65項所述之形成固態冷卻結構的方 1254432 ΐ體i:該；^驟係選自下列族群之-：微機電加工、半 养月山钱械加工、與上述任二以上的組合。 半 法7·，iUd，64項工斤述之形成固態冷卻結構的方 〜甲形成该導電凸塊係包含以印刷的方式進行。傅扪方 法·，範圍第64項所述之形成固態冷卻姓構的* 套更包含包覆-塑封材料於該熱導性基板之周圍〔、、口構的方 第=述之形成嶋卻結構的方 71提:種’ΐ乞固Λ冷卻結構與封裝結構的方法，包含·· -被動冷卻、纟^之與^數個第-歸結構位於該第 上配文個電（thermoelectric)轉換結構於亨第矣 ❿ —提供-第二被動冷卻結構#與=&/二結構； —被動冷卻結構之一第二表面上· 一钻者、、、。構位於該第 皮動冷卻結構於-封裝結構上；及 々者母-_電轉換結構與每—該第二黏著結構。 2構專;?ί;品項 提供-具料㈣步㈣含： ίΐ複ίϊ变屬广毒配置;該第-供ί第—表面； 著= 盖成勺一入導電凸塊於每-該金屬結構上，I中 者4 W母-該導電凸塊與對應的該金屬結^母一该弟-點 73.如申請專利範圍第72 結構的方法，更包含移除遠'離If#正#sf態冷卻結構與封裝 隹4弟—表面之部分該具熱導性 24 1254432 基板以形成錄個散熱⑼於該具鱗性基板上。 7结4構Ξ3二3:員:述之整合固態冷卻結構與封裝 作山钱械加工、與上述任二以上的組合。 結構的方>ί專:]言所述之整合固態冷卻結構與封裝 /、宁形成戎導電凸塊係包含以印刷的方式進行。 76·如申請專利範圍第71項所滅夕·敗人m r、入t 結構的方法，更包含燒結處理&之_=固心^結構與封裝$·李Ϊί 1*, the integrated package and cooling structure described in item 35 of the 第 第 整合 整合 整合 范围 范围 范围 范围 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 — The connecting material is a metal conductive device, wherein the electrically insulating portion is interposed between the thermoelectric conversion module and the integration described in claim 38; The metal material 'face is sealed with the cooling structure by a 2 ΐ ^ 一 一 结构 仏 仏 仏 仏 仏 仏 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 The cooling structure has a sintered surface metal heat sink adjacent to the thermoelectric conversion module. 43: The integrated package and cold according to claim 22, wherein the first passive cooling structure is a heat sink having a dielectric surface adjacent to the thermoelectric conversion mode group. The integrated package and cooling system of claim 22, wherein the second passive cooling structure comprises an electrical insulating portion 2 = g, wherein the electrically insulating portion is interposed between the thermoelectric conversion module and the / The package of the integrated package and the cooling structure described in Item 44 of the heat conduction is not formed, wherein the electrically insulating portion is formed of a thermally conductive material. The encapsulation system of the integrated package and the cooling structure described in Item 44, wherein the heat conducting portion is formed of a metal material.苒 苒 t 7 ί ί ί 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 申请 ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί冓 冓 封 ^ 8 8 申请 申请 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合The other side has a plurality of metals; the if-junction surface is adjacent to the thermoelectric conversion module. ",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, One side has a plurality of metal gold w, and the surface of the knot is adjacent to the thermoelectric conversion module. The ..., ..., the fin 21 1254432, the structure of the mounting is in parallel with each other. A metal heat-dissipating fin=2, as described in claim 22, wherein the heat source comprises at least one wafer positively. 〇' 于 于 于 舁 舁 舁 舁 53 53 53 53 53 53 53 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于, including. H is a number of thermoelectric (th gamma electHc) conversion t Γ the thermoelectric conversion structure corresponds to each - the first. - two by t cold - but the mouth is attached to each - the thermoelectric conversion structure and each _ the second adhesion The method described in the method 4.ncn5! forms a solid-state cooling structure in which a plurality of metal structures are disposed on the second surface; for a surface; a 40%; the electric bump is on each of the metal structures One is - the third parent - the conductive bump and the corresponding metal structure. The method of forming a solid-state cooling structure by using a plurality of surface hot-material substrates according to the method of i5 white, and the method of forming a solid-state cooling structure according to item 54 is formed into a conductive bump system. Including the method of printing.... The method for forming a solid-state cooling structure according to item 54. A plastic sealing material is disposed around the heat-conductive substrate. 22 ί254432 59· as described in claim No. The method further comprises sintering the first surface. The method of forming a solid-state cooling structure. The method of claim 19, further comprising forming an insulating layer on the first surface to form a solid-state cooling structure. The method of claim 61, wherein the configuring step comprises: forming a solid cooling structure to form a plurality of first conductive connecting materials to form a plurality of thermoelectric materials in the plurality of plurality of thermoelectric materials to form a plurality a second conductive connection material V Hong connection material; and: two of the thermoelectric materials are connected by any one of the second conductive material of the material; X brother cold junction material or L1 2 3 ·, the two described in the form of a solid-state cooling structure and plating:; method: Hai formation steps are selected from the following groups -: Chowder 2 63 · as claimed The method, wherein the plurality of tantalum materials are formed to form a square portion of the solid-state cooling structure and a plurality of P-type conductivity; the material and the tantalum form a plurality of N-type conductivity: the formation of the circumference and the fifth item The step of the passive cooling structure of the solid state cooling structure comprises: forming a second surface of the substrate; the metal structure is disposed on the second surface; and tying each of the metal structures, wherein each of the The second adhesive mother has the V electric bump and the corresponding metal structure. The surface forming the solid-state cooling structure described in Item 23 1 is a plurality of parts of the surface of the second surface of the body, and the heat-conductive substrate is formed on the thermally conductive substrate. 4 • It is called the surface of the solid-state cooling structure described in the 65th patent of the patent scope. 1254432. The body is selected from the following groups: MEMS processing, semi-Yangshanshan processing, and the above two The combination above. The method of forming a solid-state cooling structure of the method of forming a solid-state cooling structure is carried out in a printed manner. The method of forming a solid-state cooling structure as described in the 64th item of the range further includes a coating-molding material around the heat-conducting substrate [, and the formation of the structure of the mouth structure] Party 71: a method for cultivating a cooling structure and a package structure, including: - passive cooling, 纟 ^ and ^ number of first-homing structures are located in the first collateral thermoelectric conversion structure Yu Hengdi - provide - the second passive cooling structure # and = & / two structures; - one of the passive cooling structures on the second surface · a driller, ,,. The structure is located on the first skin moving cooling structure on the package structure; and the mother-electric conversion structure and each of the second adhesive structures. (2) Steps (4) Contains: ΐ ΐ ϊ 属 属 属 属 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; In the metal structure, the 4 W female in the I-the conductive bump and the corresponding metal junction are the same as the point-point 73. The method of the 72nd structure of the patent application includes the removal of the far away from If# The #sf-state cooling structure and the package-part of the surface of the surface of the thermally conductive 24 1254432 substrate to form a heat sink (9) on the scaled substrate. 7 knot 4 structure 二 3 2 3: Employee: The integrated solid-state cooling structure and package are described as a combination of the above two or more. The structural side > 专 special:] stated that the integrated solid-state cooling structure and package /, 戎 forming 戎 conductive bumps are included in a printed manner. 76. If the application for patent coverage is in the 71st, the method of smashing m r, into the structure of t, including the sintering process & _ = solid structure and packaging 結構的：‘專u:::1 m之整合固態冷卻結構與封裝 匕s七成一纟巴緣層於該第一表面上。 ΐ構ΐ、:ϊ專;整合固態冷卻結構與封裝 ί ίίϊϊίΐ；^^ ^ 形成複數個第二導電遠桩=:弟”” t接材枓上’及 中任相鄰之兩該熱電材 ，其 一該第二導電連接材料連接。 Μ弟V電連接材料或任 Ϊ構S ί專Ϊ》C二員以二整合固態冷卻結構與封裝 鍍、蒸鑛與電㈣ί法㈣成步驟係、選自下列族群之一：趟 =構專3=、:^整合固態冷卻結構與封裝 型導電性部分與: 部分與任一該Ρ型導電J二匕任-该Ν型導電性 :構=專合固態冷卻結構與封裝 k供一具熱導性基板，該《導性基板提供該t4·面； 25Structure: ‘Special u::: 1 m integrated solid-state cooling structure and package 匕s seven-in-one 纟 缘 on the first surface. ΐ ΐ ΐ ϊ 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合The second electrically conductive connecting material is connected. Μ弟V electrical connection material or any Ϊ Ϊ Ϊ Ϊ 》 C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C 3=, :^ Integrated solid-state cooling structure and package-type conductivity part and: Part and any of the Ρ-type conductive J 匕 匕 - the Ν type conductivity: structure = dedicated solid-state cooling structure and package k for a heat a conductive substrate, the "conductive substrate provides the t4 face; 25 1254432 複數個金屬結構配置於該第二表面上；及 著^凸塊於每一該金屬結構上，其中每一該第二點 者、、Ό構包含母一該導電凸塊與對應的該金屬結構。 ” Ϊ才盖專利範圍第81項所述之整合固態冷卻結構與封裝 力:半t ft該/除步驟係選自下列族群之-··微機電 + V拉加工、知岔機械加工、與上述任二以上的組合。 ϊ構Πί專:=:所述之整合固態冷卻結構與封裝 ”中开ν成。亥$電凸塊係包含以印刷的方式進行。 專範圍第81項所述之整合固態冷卻結構與封裝 、° 、>，更包含包覆-塑封材料於該熱導性基板之周圍： Ϊ構態冷卻結構與封裝 二=專;結構㈣ 專整合固態冷卻結構與封裝 提供一載板； 固定至少一熱源於該載板上； Ϊ構=專 26 1254432 9 Ο μ 結構專if圍第71項所述之整合固態冷卻杜構盘私壯 方法，其中該電性連接的步驟係以打線方式厂封衣 結構專f以：項所述之整合固態冷卻結 一中忒电性連接的步驟係以覆晶的方式構與封裝 92.如申請專利 什。 結構的方法，其中固定該熱=之構輿⑽ 2構=專;?心，_卻結構、 /原包含固定一晶圓。饵與封裴1254432, a plurality of metal structures are disposed on the second surface; and the bumps are on each of the metal structures, wherein each of the second points, the second structure comprises a mother and the conductive bumps and the corresponding metal structure.整合 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖Any combination of two or more. ϊ Π 专: =: The integrated solid-state cooling structure and package described in the above. The Hai$ electric bump system is included in a printed manner. The integrated solid-state cooling structure and package described in the above-mentioned item 81, °, > further comprises a cladding-molding material around the thermally conductive substrate: Ϊstructure cooling structure and package 2 = special; structure (4) Integrating the solid-state cooling structure and the package to provide a carrier plate; fixing at least one heat source to the carrier plate; Ϊ = = special 26 1254432 9 Ο μ structure dedicated to the method of integrating the solid-state cooling of the solid disk The step of electrically connecting is a wire-sealing method, and the step of electrically connecting the solid-state cooling junction is described in the item: the step of electrically connecting the substrate is in a flip chip manner and the package is 92. . The method of structure, wherein the heat is fixed to the structure (10) 2 structure = special; heart, _ but structure, / original contains a fixed wafer. Bait and seal 2727
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