1250563 ' 15595tvvf.doc/g 九、發明說明： 【發明所屬之技術領域】 本發明疋有關於一福jL·道神制# 〇 ,1. 檀平¥體製私，且特別是有關於 種浸沒式微影製程以及圖案化製程。 3肖、 【先前技術】1250563 ' 15595tvvf.doc/g IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to Yifu jL·道神制# 〇, 1. Tanping ¥ system private, and especially related to species immersion micro Shadow process and patterning process. 3 Xiao, [prior art]
微影技術是1半導體元件製造過程中舉足輕重的 技術。凡是與金氧半導體(Metal Qxide Semieonduetor)元件 結構相關的’例如：各層薄朗圖案(patt⑽），及捧有雜 ’o_S)㈣域’都是由微影這個步驟來決定的。一 =微影製程包括了光阻塗佈、曝光步驟以及顯影步驟， :中’曝光步驟是令曝光光束經光罩而闕至光阻層，或 =使曝絲束直接照射(直寫）至光阻層，而使得光阻層之 二光區產生光化學變化。再經烘烤步驟、顯影步驟之後， 光罩圖案即+可轉移到光阻層，形成圖案化光阻層。 而Ik著積體電路之積集度的提高，整個積體電路之元 尺寸也必麵之縮小。因此，為了㈣元件尺寸的縮小 化’ 一種浸沒式微影製程(immersi〇n随〇gr_y『ο·) 極的發展中。目前，此種微影製程的曝光步驟是在 ^目壞境中進行’藉由液體折射率大於空氣折射率的性 7光通過液體日守波長會縮短，而使得曝光步驟的解析度 可以大幅的提升，進而達到^件縮小化之目的。 然❿’浸沒式微影製程仍有幾項關鍵因素仍待克服， 2液體與光阻的交互作用以及液體中微泡的控制等。特 別是，當於進行浸沒式㈣製程之曝光步糾，因光阻層 1250563 • 15595tvvf.doc/gThe lithography technology is a pivotal technology in the manufacturing process of semiconductor components. Anything related to the structure of a metal oxide semiconductor (Metal Qxide Semieonduetor) structure, for example, each layer of thin pattern (patt (10)), and the holding of the 'o_S) (four) domain are determined by the lithography step. A lithography process includes a photoresist coating, an exposure step, and a development step, wherein: the 'exposure step is to expose the exposure beam to the photoresist layer through the mask, or = direct exposure (straight write) to the photoresist The layer causes photochemical changes in the two regions of the photoresist layer. After the baking step and the development step, the mask pattern, ie, + can be transferred to the photoresist layer to form a patterned photoresist layer. As the integration of the Ik integrated circuit increases, the size of the entire integrated circuit also shrinks. Therefore, in order to (4) size reduction of components, an immersion lithography process (immersi〇n with _gr_y ο·) is extremely developed. At present, the exposure step of the lithography process is carried out in the environment of 'the liquid crystal with a refractive index greater than the refractive index of the air. The light passing through the liquid will be shortened, so that the resolution of the exposure step can be greatly improved. Enhance, and then achieve the goal of reducing the size of the pieces. However, there are still several key factors still to be overcome in the 'immersion lithography process', 2 the interaction of liquid and photoresist and the control of microbubbles in the liquid. In particular, when performing the immersion (four) process exposure step correction, due to the photoresist layer 1250563 • 15595tvvf.doc/g
會與浸沒式曝光步驟之浸沒液體接觸，因此光阻層中的部 分化學物質會擴散至上述之液體中，而使光阻層之性質改 ’吏尤其疋’光阻層中含有的光酸產生劑（photo acid generator ’ PAG)會擴散至浸沒式曝光步驟之浸沒液體中， 而使其濃度降低，因此會致使顯影後的光阻圖案出現頂端 T型（T-top)的問題。如此一來，對於微影製程之解析度與 製程裕度(process window)，以及光阻圖案的關鍵尺寸與均 勻度等等都會造成影響。 ^ 習知解決光阻圖案上出現3端丁型(丁-top)問題的方法 為在光阻層上形成一層阻障層，此阻障層中不含有光酸產 生劑，其目的是阻絕光阻中之光酸產生劑，以避免光酸產 生劑擴散至浸沒液體中，且此阻障層的材質必須不溶於浸 沒式曝光步驟之浸沒液體中，而必須溶於四甲基氫氧化銨 (TMAH)的顯影劑中，因此其在製作上較為複雜。而且， 於形成光阻層後還需再另外形成一層阻障層，並合辦 程上的成太。 d衣 【發明内容】 巧―、此，不货奶的曰的就是在提供一種浸沒式 =程’以解決傳錢沒式微影製程存在有紐層中的化學 物質會擴散至浸沒液體，而產生顯影後的光聞 糙Τ型的問題，以提高製程的解析度。 ’、見頁 本發明的另-目的是提供-種圖案製 的控制關鍵尺寸，以及提高關鍵尺寸均勻^此夠精確 本發明的又’目的是提供—種應用於浸沒式微影製 6 1250563 ’ 15595twf.doc/g 程之結構，能夠避免顯影後的光阻圖案出現頂端 題，並且能夠提高製程的解析度。 -、 本發明提出—種浸沒式微難程，此製程係先在一声 二’：層+上形成光阻層，然後在光阻層上形成—層酸^ 層。接著，對酸補償声以及弁阻呙、隹—θ 貝 ρ接…' :廢及先阻層進仃一浸沒式曝光步驟。 近 m員影步驟，以圖案化酸補償層以及光阻异。 ，照本發明的較佳實施例所述，上述之 “ 有的光酸產生劑在進行浸沒式曝光步_，= 於光阻層中含有的光酸產生劑所產生之光酸濃产。又 域ΓΓ發明實施例所述’上述之酸補償層^光阻層的 層中含有的光有的光軸 、組二本 弁阻展由人士有的先酸產生劑的溶解速率較 先阻層中g有的光酸產生劑的溶解速率慢。 乂 〜照本發明實施例所述，上述之酸補償層的厚度為10 本發明另提出一種圖案化製程，樂 料層上形成光阻層，然後在光2在一層材 要者湘夂補乜層以及光阻層進行一浸沒 後，進行一顯影步驟，以形成_ 4 。之 案化之光阻層。繼之，二t上!酸補償層與-圖 阻層為_罩幕，侧材料Γ 償層與圖案化之光 依照本發明實施例所述，上述之酸補償層中含有的光 1250563 •丨 5595twf.doc/g 酸產生劑在進行浸沒式曝光 甘、， 層中含有的光酸產生劑所產生之光酸濃卢酉义/辰度向於光阻 組成與光-層的 層中含有的光酸產生船^有的先酸產生劑濃度高於光阻 依照本發明實施例所述，上述之酸# 組成不同，且酸補償層中含 曰/、先阻層的 刪含有的光酸產生;巧的溶解速率較 〜3〇:照本㈣實施例所述，上述之酸顧層的厚度為1〇 本發明又提出一種應用於浸沒式微 、，構包括光阻層與酸補償層、、、、。構’此 上，酸補償層配置在此光阻層=丨阻層配置在材料層 照本發明實施例所述’上述之酸補償声愈光阻展的 組成相同，且酸補償層中含有的 ：、士阻層的 層中含有的光_生舰度。 肖彳⑧度南於光阻 組成不同本1二3=有上述之酸補償層與光阻層的 〜3=___述償層的厚度為10 可取代細_償層 驟後’竣補償層中含有的光酸濃度高於光；== 8 1250563 、15595twf.doc/g 酸濃度，因此，在接下來的顯影步驟， 案不會有頂端τ型的問題。如此 /、所士成之先阻圖 度，且不會影響光阻圖案的關鍵尺寸1可提南製程的解析 ㈣為他目的、特徵和優職更明顯 明如下。 正配口所附圖式，作詳細說 【實施方式】 • 為I解決傳統浸沒式微影製程中存在有光阻芦中的 化學物質會擴散至浸沒式曝光步驟之液體 、曰 光步驟之液體也可能會擴散至光阻層中 題。本發明提出了 -種浸沒式微影黎=之種種n • t結構與圖案化製程，其係包括於‘層上:成 促進製程之解析度。町將錢佳實關來詳細說 明本發明，但並非用以限定本發明。 圖1A至圖1D所示’其是依照本發明所繪示之較佳 實施例的浸沒式微影製程之流程剖面示意圖。請先灸 籲1A，首先提供基底刚，此基底i⑽上已形成—材料層 102 ’此材料層102例如是預定被圖案化之材料層，其例二 是介電材料層、導電材料層或是其他材料層等等。⑽才^ 層102亦可以是預定進行離子佈植之材料層，其例如是矽 基底、介電層或是導電層等等。本發明並不對材料層 作特別的限定’只要是需利用光阻層對其進行後續 步驟者皆可。 ' \£ 請繼續參照圖1A，在材料層1〇2上形成一層光阻層 1250563 】5595tvvf.doc/g 其中光阻層104可例如是正光阻，光阻層i〇4之材質 ，如是現有的感赌料，其可例如是由聚合物、光酸產生 #I(Photcacid generator ^ PAG) ^ i^,^#](Acid quencher) ^ 添加劑f容劑所混合而成的感光材料，而光阻層m之形 成方法是彻已知的光阻塗細及熱料等步驟。Will be in contact with the immersion liquid of the immersion exposure step, so that some of the chemicals in the photoresist layer will diffuse into the above liquid, and the properties of the photoresist layer will be changed, especially the photoacid contained in the photoresist layer. The photo acid generator 'PAG' will diffuse into the immersion liquid of the immersion exposure step, causing the concentration to decrease, thus causing a problem of the top T-top of the developed photoresist pattern. As a result, the resolution and process window of the lithography process, as well as the critical dimensions and uniformity of the photoresist pattern, can be affected. ^ The conventional method for solving the 3-terminal D-top problem on the photoresist pattern is to form a barrier layer on the photoresist layer. The barrier layer does not contain a photoacid generator, and the purpose is to block the light. The photoacid generator is blocked to prevent the photoacid generator from diffusing into the immersion liquid, and the material of the barrier layer must be insoluble in the immersion liquid of the immersion exposure step, and must be dissolved in tetramethylammonium hydroxide ( TMAH) is therefore more complicated in the production of the developer. Moreover, after forming the photoresist layer, a further layer of barrier layer needs to be formed, and the process is combined. d clothing [invention content] Qiao--, this, the non-feeding milk is to provide a kind of immersion = Cheng' to solve the money-transfer lithography process, the chemical substances in the layer will spread to the immersion liquid, resulting in The problem of light and roughness after development is to improve the resolution of the process. 'See page. Another object of the present invention is to provide a control key dimension for patterning and to increase the critical dimension uniformity. This is precisely enough. The purpose of the present invention is to provide an application to immersion lithography 6 1250563 '15595 twf The structure of the .doc/g process can avoid the top-end problem of the photoresist pattern after development, and can improve the resolution of the process. - The present invention proposes a submerged micro-hardship process in which a photoresist layer is formed on a second layer of a sound layer, and then a layer of acid layer is formed on the photoresist layer. Then, the acid compensation sound and the 弁 呙, 隹 θ 贝 ρ ... ' ' 废 废 废 废 废 废 废 废 废 废 废 废 废 废 废 废 废 废 废 废Nearly m-shadow steps to pattern the acid compensation layer and the photoresist. According to a preferred embodiment of the present invention, the above-mentioned "photoacid generator" is subjected to an immersion exposure step, and the photoacid generator contained in the photoresist layer is rich in photoacid. In the embodiment of the invention, the optical acid contained in the layer of the above-mentioned acid compensation layer and the photoresist layer has an optical axis, and the dissolution rate of the first acid generator is higher than that of the prior acid layer. g has a slow dissolution rate of the photoacid generator. 乂~ According to the embodiment of the invention, the thickness of the acid compensation layer is 10. The invention further proposes a patterning process, forming a photoresist layer on the layer of music, and then After the light 2 is immersed in the layer of the material and the photoresist layer, a development step is performed to form a photoresist layer of _4. Next, the second compensation layer The pattern layer is a mask, the side material compensation layer and the patterned light are as described in the embodiment of the present invention, and the light 1250563 • 丨5595 twf.doc/g acid generator contained in the acid compensation layer is in progress. Submerged exposure, the photoacid produced by the photoacid generator contained in the layer The concentration of the first acid generator contained in the photoresist composition and the photo-acid layer in the layer of the light-layer is higher than that of the photoresist according to the embodiment of the present invention, and the acid composition of the above is different, and the acid compensation layer The photoacid contained in the yttrium/first barrier layer is produced; the dissolution rate is better than 〜3 〇: according to the embodiment (4), the thickness of the above-mentioned acid layer is 1 〇. The submerged micro, including the photoresist layer and the acid compensation layer, and the structure, wherein the acid compensation layer is disposed in the photoresist layer = the resist layer is disposed on the material layer as described in the embodiment of the present invention The composition of the acid compensation sound resistance is the same, and the acid compensation layer contains: the light contained in the layer of the resistance layer _ the ship degree. Xiao Wei 8 degrees south of the photoresist composition is different 1 2 3 = Yes The thickness of the above-mentioned acid compensation layer and the resist layer of the photoresist layer is 10, which can replace the fine layer, and the concentration of photoacid contained in the compensation layer is higher than that of light; == 8 1250563 , 15595 twf .doc/g acid concentration, therefore, in the next development step, there will be no problem with the top τ type. The first resistance map, and will not affect the key dimensions of the photoresist pattern. 1 The analysis of the South Process can be made. (4) For his purpose, characteristics and excellent position, it is more obvious as follows. The figure of the matching mouth is detailed. Memories] • For the solution of I in the traditional immersion lithography process, the chemical substances in the resist reeds will diffuse to the liquid in the immersion exposure step, and the liquid in the calendering step may also diffuse into the photoresist layer. The present invention proposes - Immersed lithography 黎 = a variety of n • t structure and patterning process, which is included in the layer: to promote the resolution of the process. The town will be Qian Jiashi to elaborate the invention, but not for The present invention is defined by the accompanying drawings in which: FIG. 1A to FIG. 1D are schematic cross-sectional views of a immersion lithography process in accordance with a preferred embodiment of the present invention. Please first moxibustion 1A, first provide a substrate, the substrate i (10) has been formed - material layer 102 'this material layer 102 is, for example, a layer of material that is intended to be patterned, and the second example is a dielectric material layer, a conductive material layer or Other material layers and so on. (10) Layer 102 may also be a layer of material intended for ion implantation, such as a germanium substrate, a dielectric layer or a conductive layer, and the like. The present invention does not particularly limit the material layer as long as it is necessary to use a photoresist layer for subsequent steps. ' \ Please continue to refer to FIG. 1A, a photoresist layer 1250563 is formed on the material layer 1 〇 2] 5595tvvf.doc / g wherein the photoresist layer 104 can be, for example, a positive photoresist, a material of the photoresist layer i 〇 4, if it is existing a sensible material, which may be, for example, a photosensitive material obtained by mixing a polymer, a photoacid, #I(Photcacid generator ^ PAG) ^ i^, ^#] (Acid quencher) ^ additive f-capacitor, and light The formation method of the resist layer m is a well-known step of coating the photoresist and the hot material.
“之後明芩照圖1B，在光阻層1〇4上形成一層酸補 償層106,而酸補償層1〇6的厚度約為1〇〜遍㈤左右，酸 補償層106之形成方法同樣可例如是利用上述提及已知的 光阻塗佈以及熱烘烤等步驟。在一實施例中，酸補償層ι〇6 的材貝可例如是與光阻層1()4的材質相同，且酸補償層1〇6 中含有的光酸產生劑濃度高於光阻層1〇4中含有的光酸產 生劑濃度。在另一實施例中，酸補償層1〇6的材質亦可例 如疋與光阻層104的材質不同，但酸補償層1〇6中含有的 光敲產生劑的溶解速率較光阻層1〇4中含有的光酸產生劑 的溶解速率慢。 接著’請參照圖1C，對酸補償層1〇6以及光阻層ι〇4 進=二浸沒式曝光步驟1〇8，其中浸沒式曝光步驟1〇8是 在浸沒液體中進行，且浸沒式曝光步驟1〇8中所使用的曝 光光源可以是現有的任何一種曝光波長之曝光光源，而曝 $光源例如是i線、氟化氪雷射、氟化氬雷射、氟雷射或 疋其他已知的曝光光源。於進行此浸沒式曝光步驟108之 後’曝光光束透過光罩（未繪示)之透光區與非透光區後， 會在酸補償層106以及光阻層104中形成曝光部106a與 l〇4a以及未曝光部1〇6b與1〇仆，而曝光部1〇如與1〇牝 1250563 ’ 15595twf.doc/g 因受光之照射會產生光化學反應。 由於浸沒式曝光步驟1〇8是在浸沒液體中進行，曝光 光束是通過液體介質之後才進入光阻層1〇4中，而因液體 折射率低於空氣折射率，因此，曝光步驟之解析度得以提 升。然而，也由於浸沒式曝光步驟1〇8是於一浸沒液體中 進行的，因此酸補償層1〇6中之光酸產生劑會與浸沒液體 產生交互作用，亦即是上述之光酸產生劑會擴散至浸沒液 體中，而浸沒液體也可能會擴散至酸補償層1〇6中。 值得特別注意的是，若酸補償層106的材質與光阻層 1〇4的材質相同時，由於酸補償層1〇6中含有的光酸產生 劑濃度高於光阻層1G4中含有的光酸產生舰度，所以在 進仃^沒式曝光步驟108後，酸補償層1〇6中含有的光酸 濃度高於光阻層104中含有的光酸濃度。另—方面，若酸 ί償層106的材質與光阻層104的材質不_，由於酸補 =1〇6中含有的光酸產生劑的溶解速率較光阻層1〇4中 3有的先酸產生劑的溶解速率慢，因此 步驟108 #，酿诂衿腐，丄 疋m又’又八曝先 補Μ 中含有的光酸濃度高於光阻層 1〇4中含有的光酸濃度。 m 補^遺t請參照圖1D，進行—顯影步驟，以圖案化酸 仏曰06以及光阻層⑽，以於 化之酸補償層1〇6c盥岡安儿* ^ 〜坎圓案 中，在-、心」二 之光阻層购。在-實施例 勺中，二曝光步驟⑽之後，於顯影步驟之前，更可 ΐ後的烤步驟。上述之顯影步驟例如是使先前經曝 先後的酸補償層廳以及光阻層刚浸泡在顯影劑中^ ^50563 】5595twf.doc/g f除光阻層1G4中的曝光部l〇6a與HMa，保留下未曝光 4 l〇6b肖KKb’而形成圖案化之酸補償層i〇6c與圖案化 之光阻層104c。 在上述貫施例中’因為在進行浸沒式曝光步驟108 ^ ’酸補償層1〇6中含有的光酸濃度高於光阻層1〇4中含 勺光酉文/辰度，所以在接著進行之顯影步驟中不會如習知 樣因光阻層中含有之光酸濃度降低，而使所形成之光 ^圖案〇圖id所;之賴償層職與圖案化之 、層l〇4c〇出現有頂端丁型的問題，進而影響到 上述之衣私的解析度與製程裕度⑦服⑽，以及光 阻圖案的關鍵尺寸與均勻度等等。"Afterwards, according to FIG. 1B, an acid compensation layer 106 is formed on the photoresist layer 1〇4, and the thickness of the acid compensation layer 1〇6 is about 1〇~(5), and the acid compensation layer 106 can be formed by the same method. For example, it is a step of using the known photoresist coating and thermal baking, etc. In one embodiment, the material of the acid compensation layer ι 6 may be the same as the material of the photoresist layer 1 () 4, for example. The concentration of the photoacid generator contained in the acid compensation layer 1〇6 is higher than the concentration of the photoacid generator contained in the photoresist layer 1〇4. In another embodiment, the material of the acid compensation layer 1〇6 may also be, for example.疋 is different from the material of the photoresist layer 104, but the dissolution rate of the photo-producing agent contained in the acid compensation layer 1〇6 is slower than the dissolution rate of the photo-acid generator contained in the photoresist layer 1〇4. 1C, the acid compensation layer 1〇6 and the photoresist layer ι〇4 are subjected to the second immersion exposure step 1〇8, wherein the immersion exposure step 1〇8 is performed in the immersion liquid, and the immersion exposure step 1〇 The exposure light source used in 8 may be any exposure light source of any of the existing exposure wavelengths, and the exposure light source is, for example, i-line, fluorine. a sputum-emitting laser, an argon fluoride laser, a fluorine laser or other known exposure light source. After performing the immersion exposure step 108, the light-transmissive area of the exposure beam passing through the reticle (not shown) is non-transparent. After the light region, the exposed portions 106a and 104a and the unexposed portions 1〇6b and 1 are formed in the acid compensation layer 106 and the photoresist layer 104, and the exposure portion 1 is, for example, 1〇牝1250563 '15595twf. Doc/g photochemical reaction due to exposure to light. Since the immersion exposure step 1〇8 is performed in the immersion liquid, the exposure beam enters the photoresist layer 1〇4 after passing through the liquid medium, and the liquid refractive index Lower than the refractive index of the air, therefore, the resolution of the exposure step is improved. However, since the immersion exposure step 1〇8 is performed in an immersion liquid, the photoacid generator in the acid compensation layer 1〇6 The interaction with the immersion liquid, that is, the above photoacid generator will diffuse into the immersion liquid, and the immersion liquid may also diffuse into the acid compensation layer 1 〇 6. It is worth noting that if the acid compensation layer 106 Material and photoresist layer 1〇4 When the mass is the same, since the concentration of the photoacid generator contained in the acid compensation layer 1〇6 is higher than the photoacid generation degree contained in the photoresist layer 1G4, the acid compensation layer 1 is removed after the exposure step 108 is performed. The photoacid concentration contained in the crucible 6 is higher than the photoacid concentration contained in the photoresist layer 104. On the other hand, if the material of the acid repellent layer 106 and the material of the photoresist layer 104 are not _, due to acid addition = 1 〇 6 The dissolution rate of the photoacid generator contained in the photoresist layer is slower than that of the first acid generator in the photoresist layer 1〇4, so step 108#, brewing rot, 丄疋m and 'eight exposure first The concentration of photoacid contained in Μ is higher than the concentration of photoacid contained in the photoresist layer 1〇4. m Replenishing the residue, refer to Figure 1D, and perform a development step to pattern the acid 仏曰 06 and the photoresist layer (10). For the acid compensation layer 1〇6c盥冈安儿* ^ ~ 坎圆 case, in the -, heart" two photoresist layer purchased. In the scoop of the embodiment, after the two exposure step (10), before the development step, the subsequent baking step is further performed. The developing step is, for example, that the acid compensation layer chamber and the photoresist layer which have been exposed in the past are just immersed in the developer, the exposure portions l〇6a and HMa in the photoresist layer 1G4, which are 5595 fff.doc/gf, The patterned acid compensation layer i〇6c and the patterned photoresist layer 104c are formed by leaving the unexposed 4 l〇6b KKb'. In the above-mentioned embodiment, 'because the photoacid concentration contained in the acid compensation layer 1〇6 in the immersion exposure step 108^ is higher than that in the photoresist layer 1〇4, In the developing step, the concentration of photoacid contained in the photoresist layer is not reduced as is conventional, and the formed light pattern is shown in the figure id; There is a problem with the top type, which affects the resolution and process margin of the above-mentioned clothing (10), and the critical size and uniformity of the photoresist pattern.
在以下之說明中，於顯影步驟之後，更可利用本發明 之浸沒式微影製程以繼續進行圖案化製程。 繼之，請參照圖1E，以_化之酸補償層驗與圖 材料層為钱刻罩幕，侧材料層102，以形成 幸化上萨二爲另1疋’上述於顯影步驟後，其所形成的圖 頁鈿丁孓的問畸，且光阻圖案的線寬 ===發明之浸沒式微影製程所形成之光_案= 知廊較為精確，因此叫當伽鮮幕 所形成之材料層K)2a的關鍵尺寸。 後 H)4 之ϋί微影製程所使用之結構包括光阻層 圖1Β所示），光阻層刚可配置在 預疋被圖案化之材料層1()2或者是預定進行離子佈植之材 5595twfd〇c/g 1250563In the following description, after the developing step, the immersion lithography process of the present invention can be utilized to continue the patterning process. Then, referring to FIG. 1E, the acid layer compensation layer and the layer of the material layer are etched by the mask layer, and the side material layer 102 is formed to form the Kosei Saskatchewan as another layer. The formed picture page is awkward, and the line width of the photoresist pattern === the light formed by the immersed lithography process of the invention _ case = the gallery is more precise, so it is called the material formed by the glazed curtain The critical dimensions of layer K) 2a. After H)4, the structure used in the lithography process includes the photoresist layer (Fig. 1A), and the photoresist layer can be disposed on the pre-patterned material layer 1 () 2 or is intended to be ion implanted. Material 5595twfd〇c/g 1250563
，15595 ’而_償層iG6配置在此光阻層⑽上。I :續=Γ06可作為光酸產生劑之擴散膜層，而可使 後成之光阻圖案不會有頂端τ型的問題。 使 综合以上所述，本發明具有下列優點·· 读沒气在光阻層上形成酸補償層，其可避免因傳統 造成_成之光賴案出現頂端問 製程的解析度與製程裕度。 木了如间 在制二明，補償層可與光阻層之材質相同，因此宜 衣較為單不複雜’且亦可節省製程之成本。” 及提之圖案化製程能夠精確的控制關鍵尺寸，以 及杈π關鍵尺寸的均勻度。 Μ 中，=ΐΓ月ί:法可:應用在現有的浸沒式微影製程 光光源及光晴料”。 制現有的曝 雖然本發明已哺佳實施觸露如上 限定本發明，任何 ^卫非用以 知銘鬥向^ 7…、白此技云者，在不脫離本發明之精神 ^ ，§可作些許之更動與潤飾，因此本發明之伴i 範圍當視後附之申請專利範圍所界定者為準。保屢 【圖式簡單說明】 1E輕照本剌崎私較佳實施例以浸 /又式微衫衣程進行圖案化流程的剖面示意圖。 【主要元件符號說明】 1Q〇 :基底 13 1250563 、15595twf.doc/g 102、102a :材料層 104 :光阻層 104a、106a :曝光部 104b、106b :未曝光部 104c :圖案化之光阻層 106 :酸補償層 106c :圖案化之酸補償層 108 :浸沒式曝光步驟 14, 15595 ' and the compensation layer iG6 is disposed on the photoresist layer (10). I : Continue = Γ 06 can be used as a diffusion film layer of a photoacid generator, and the subsequent photoresist pattern can have no problem of the top τ type. In summary, the present invention has the following advantages: • The formation of an acid compensation layer on the photoresist layer by reading out the gas can avoid the resolution and process margin of the top process caused by the conventional method. If the wood is in the same way, the compensation layer can be the same as the material of the photoresist layer, so it is not complicated to make it suitable, and the cost of the process can be saved. And the patterning process can precisely control the critical dimensions and the uniformity of the key dimensions of 杈π. Μ 中,=ΐΓ月ί:法可:Applicable to the existing immersion lithography process light source and light-clearing material”. The existing exposure of the present invention, although the invention has been implemented to achieve the above-mentioned limitations of the invention, any of the Wei Wei is used to know the meaning of the battle to ^ 7 ..., the white cloud, without departing from the spirit of the invention ^, § can be made </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;屡 【 【 图 图 图 【 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 。 。 [Description of main component symbols] 1Q〇: substrate 13 1250563, 15595twf.doc/g 102, 102a: material layer 104: photoresist layer 104a, 106a: exposure portion 104b, 106b: unexposed portion 104c: patterned photoresist layer 106: acid compensation layer 106c: patterned acid compensation layer 108: immersion exposure step 14