1248518 玖、發明說明： 【發明所屬之技術領域】 本發明為關於檢查對基板的零件的封裝狀態之裝 檢查方法。 【先前技術】 目前，手提電話等各種電子機器所使用的液晶驅 Μ，如圖1 0所示，在構成液晶面板之玻璃基板1上 液晶驅動之1C晶片2等一體化的COG ( Ch i p on G 形式者已逐漸被廣泛使用。此COG為一邊由多數的 所形成之面板電極4的玻璃基板1 ;及，被安裝在該 上之I C晶片2 ;及，夾在其兩者之間且使兩者接著 等的異向性導電材料 3 ;如此所構成，並介存該異 電材料3，玻璃基板1和IC晶片2以一體化而被製 相對於此面板電極4之I C晶片 2的表面上，一 多數個晶片電極5，在一體化時，必須使該晶片電4 一定部份和前述面板電極4之一定部份導通。為了 導通，如圖11所示，在前述晶片電極5上之一定部 定範圍形成微小凸狀之凸塊7的集合，該凸塊7相 板電極4之一定部份，而在玻璃基板1上配置I C晶 此種形成凸塊7之方法，一般為使用在前述一定範 多數個微小的焊粒之方法。 又，使該玻璃基板1 ;及，配置在該基板1上之I 2 ;介存前述異向性導電材料3而藉熱壓著時，含在 導電材料3之樹脂會受熱而融解。此時，如圖1 1所 312/發明說明書(補件)/93-09/93118200 置及其 動基板 ，使其 lass) IT0等 基板1 之ACF 向性導 作。 邊具有 & 5的 謀求該 份以一 對於面 丨片2。 圍設置 C晶片 異向性 示，由 5 1248518 於晶片電極5的凸塊面7 a和面板電極4的間隔，比沒有凸 塊 7的其他部份之晶片電極 5和面板電極 4之間隔更狹 窄，因此，異向性導電材料3可相對的對有凸塊7之部份 予以強力的壓縮。 在異向性導電材料3上，由於含有多數個微小的導電粒 子6，因此藉前述壓縮，面板電極4和晶片電極5接近時， 只有相對被強力壓縮之凸塊7部份會藉由前述導電粒子6 而導通。在此一狀態下，藉A C F固化，前述面板電極4和 晶片電極 5之一定部份彼此間會以導通狀態而使兩者固 定，而多接點可全部電氣接續，且在玻璃基板1上封裝I C 晶片2。 此導通時之電阻或導通之確實性可藉前述異向性導電 材料3之壓縮的程度，亦即，藉凸塊7而被押壓之導電粒 子6，可多數且確實地介在於面板電極4和晶片電極5的 凸塊7之間，以兩電極4、5間可導通之狀態而確實地押壓， 如此予以確保。 該壓縮之程度為依設在所使用之I C晶片2的凸塊7之 高度或大小，含在異向性導電材料3之導電粒子6的密度 等而決定，由於其凸塊7的高度或大小會因1C晶片2而會 有偏差，因此在前述導通狀態也會有偏差。因此為了確認 該壓縮的程度，可使用藉押壓前述凸塊7等而觀察形成在 面板電極4上之壓痕8的形成狀況，有此一方法。 此壓痕8為藉凸塊7及導電粒子6朝向面板電極4而被 押壓以形成在該面板電極4之表面，即如圖1 1所示的凹狀 6 312/發明說明書(補件)/93-09/93118200 1248518 之變形的集合。自前述基板1的裏面觀察時，此壓痕8變 成凸狀的變形之粒子的集合，其粒子為由：藉凸塊7所形成 的凸痕和藉導電粒子6所形成的導電粒子痕所形成。 如凸塊7的高度太低，或在凸塊7上未存在有導電粒子 6時.，壓痕8的強度會變弱，又，在該一定的凸塊領域内 導電粒子6的數量太少而在一部份不平衡時，在該領域内 的壓痕8之數量則會變少，上述任一情況下均不能確保適 當之導通。進一步，在前述凸塊領域外存在有凸塊7而異 物混入凸塊領域内外時，由於其會被形成不正常的壓痕 8，因此，基板1和I C晶片2則不能確保正常的導通。 因此，為了判斷壓痕8的良否，須使用顯微鏡等以肉眼 來觀看，或以肉眼觀看由該顯微鏡所取得的影像數據，一 方面比較另外準備的不良面板之樣本等而一方面比較，並 評定前述壓痕8的形成狀況，以檢查玻璃基板1和I C晶片 2的封裝狀態。 【發明内容】 (發明所欲解決之問題） 但是，上述檢查為以肉眼確認其壓痕強度或壓痕的數目 之形成狀況，其由於為由檢查員的感覺來判定每一個微小 的壓痕之良否，但依照檢查員的判定則可能有不同的檢查 結果，因而其缺乏客觀性。 又，由於對凸塊領域全數必須實施壓痕強度、壓痕數 目、分佈、偏位及異物混入等之每一個檢查項目，因此必 須花費很多的檢查時間。 7 312/發明說明書(補件)/93-09/93118200 1248518 因此，本發明之課題為，根據客觀的基準可以短時間即 可檢查出壓痕之形成狀況者。 (解決問題之手段） 為了解決上述問題，本發明之基板檢查裝置及檢查方法 為，藉微分干涉顯微鏡取得在表面上安裝I c晶片之上述透 明基板的晨面所得之I C晶片的封裝部份之晝像數據’在该 晝像數據中特定檢查之領域。根據前述檢查領域内的影像 亮度，檢測出凸塊和導電粒子形成在透明基板上的面板電 極之壓痕的壓痕位準或壓痕數目，再將該壓痕位準或壓痕 數目和基準值比較而判定前述I C晶片的封裝狀態。 在前述基板上的面板電極所發生之壓痕的強弱，由於會 呈現出不同於前述的影像亮度，因此，藉使該影像亮度數 值化，則可檢測出被決定的檢查領域内之壓痕位準或壓痕 數目，又，藉特定檢查之領域，並藉前述壓痕位準或壓痕 數目即可客觀的判定I C晶片之封裝狀態的良否。 又，前述影像數據也可採用使用微分干涉顯微鏡所得的 濃淡影像數據再予以邊緣檢測處理之手段。此邊緣檢測處 理之例，可列舉出例如影像之微分處理。根據此一構成， 在前述影像數據中可強調壓痕和其周邊部份之濃淡差，由 於其差而可明確呈現出影像亮度之數值，因此，可明確特 定壓痕之境界，同時可容易評定其壓痕。 又，也可採用對前述影像數據匹配（m a t c h i n g )基板的面 板電極之圖案等的主數據，在影像數據中定位出凸塊領 域，再根據該定位之凸塊領域而特定出檢查領域，並對該 8 312/發明說明書(補件)/93-09/93118200 1248518 檢查領域自由分割，如此之手段亦可。 根據此一構成，由於可區別凸塊領域及其以外之領 判定檢查領域，因此可因應檢查的目的而區分檢查 域。又，藉對該檢查領域予以分割，則可對一個檢查 内之壓痕分佈的偏差予以評定。 根據上述手段之基板檢查裝置及檢查方法中，檢測 述壓痕位準之具體的構成為，在前述檢查領域中，依 述影像數據的影像亮度之標準偏差而實施壓痕位準 測，也可考慮以前述影像數據的影像亮度之二值化影 據，依照其白或黑色部份之面積和形狀而檢測出壓 目，如此之構成，藉其以單獨或組合之數據而各自和 值比較即可判定前述I C晶片之封裝狀態。又取代I C 而使用撓性基板之狀況中也可用和上述同樣方法來對 (發明效果） 本發明藉以上構成，可以客觀的基準在短時間内對 實施檢查I C晶片之封裝狀態。 【實施方式】 圖1至圖9表示一實施形態之基板檢查裝置，此一 形態之基板檢查裝置為在玻璃基板1上之面板電極4 存含有導電粒子6之異向性導電材料3，重疊載置有 片2之該1C晶片2上之晶片電極5，措壓接前述基板 IC晶片2，以前述IC晶片2的晶片電極5上之凸塊7 前述異向性導電材料3而發揮導電性，同時，在前述 電極4產生壓痕8，藉該壓痕8部份的前述異向性導 312/發明說明書(補件)/93-09/93118200 域而 的領 領域 出前 照前 之檢 像數 痕數 基準 晶片 應。 基板 實施 :，介 1C晶 1和 壓縮 面板 電材 9 1248518 料3之導電性，面板電極4接續至前述晶片電極5，藉檢 測出形成在面板電極4之壓痕8的壓痕位準和壓痕數目而 判定在前述透明基板1封裝IC晶片2之液晶驅動基板Μ 對前述玻璃基板1之前述IC晶片2的封裝狀態。 此處，壓痕位準係指，在玻璃基板1上安裝IC晶片2 時，面板電極4之表面被押壓凸塊7及導電粒子6等，在 該表面變形為凹狀之高度，及該變形如何在一定範圍内等 分佈而評定壓痕8之形成狀況的指標。又，壓痕數目為表 示在該凹狀所變形之個數。 裝置之構成，如圖2所示，在Χ、Υ軸方向可移動自如， 在Ζ軸方向可升降自如，或在Χ-Υ平面内在0軸上可迴轉 自如之工作台（work stage)W上，使前述液晶驅動基板 Μ 載置在其裏面而放在上面。Ζ軸為用來調整焦點，0軸為 用來調整攝影機之掃描方向。 CPU 1 6藉由輸出入板1 4、控制盤1 5而被控制之前述工 作台W的動作，和在上部配置之CCD攝影機1 2接續的微分 干涉顯微鏡1 0對向於液晶驅動基板Μ。前述基板Μ被吸著 載置在圖6所示之工作台W上，該工作台W為可對應大小 多機種基板之構造，其藉載置場所的座標管理而可載置複 數個前述基板Μ。 CPU1 6為使用 2台機械控制用和影像處理用之個人電 腦，而各個並列處理並實現高速處理。 微分干涉顯微鏡1 0為自照明1 1的光源接受光，如圖3 箭頭a所示，自前述玻璃基板1裏面取得濃淡影像數據， 10 312/發明說明書(補件)/93-09/93118200 1248518 其影像數據為藉由高解像度之C C D攝影機1 2而被傳達至影 像處理板1 3。影像數據則被保存在C P U 1 6而表示在適宜的 晝面上。 又，照明1 1也可以自前述箭頭a之方向及箭頭b所示 自玻璃基板1的封裝面之方向來照射，其中，自前述箭頭 a的方向照射之照明1 1，為了防止在前述基板1上的面板 電極4之凹凸發生影像，因此照明以同軸光者較佳。又， 為了明確掌握微妙的金屬之形變的壓痕8之凹凸的亮度變 化，顯微鏡1 0必須是微分干涉顯微鏡。 所取得之前述濃淡影像數據，在CPU1 6等中可因應其目 的而被施加影像處理，然後經過以下所示之處理過程而被 檢測出前述各種壓痕位準和壓痕數目，藉和各個壓痕位準 和壓痕數目之基準值，或該壓痕位準和壓痕數目之組合的 基準值作比較而判定在玻璃基板1上之I C晶片2的封裝狀 態。以下，以圖1之流程圖說明該裝置中之檢查流程。 (影像數據之取得·微分處理） 將自前述顯微鏡1 0及C C D攝影機1 2所取得之玻璃基板 1的濃淡影像數據（步驟 21)在 CPU16中微分處理（步驟 2 2 )。此處所謂之微分處理為指在濃淡影像之連續部份，使 其亮度的等級變化之程度予以數值化，並更強調亮度之不 連續部份，而表示其亮度變化之顯著部份的境界，如此為 其特徵。 藉微分處理，例如在圖7所示之基板1的濃淡影像可變 成在圖8所表示之微分影像。此圖7及圖8為顯示所表示 11 312/發明說明書(補件)/93-09/93118200 1248518 影像的晝像，其和晝面所表示之實態的影像其色調不同。 在此圖7之濃淡影像中，一般而言，圖中存在τ之面板電 極4的圖案部Ρ為灰色基調而呈現無圖案部Q為黑色。此 時，在面板電極4上朝裏面突出之壓痕8，其突出部比周 圍會呈現出濃的顏色，其濃度為當凸塊高度愈高時則會呈 現出更濃的顏色。 圖8之微分影像為，於圖7的濃淡影像中，影像亮度之 等級的不連續部份，只有在壓痕8和前述圖案部Ρ之境界， 及圖案部Ρ和無圖案部Q之境界會呈現出白色。此時，壓 痕8則呈現出前述突出高度愈高時則越強調白色。 此處，不實施前述影像之微分處理，在通常的濃淡影像 中，雖然也可進行檢查以下的壓痕位準之檢測，但假如在 影像數據實施上述之微分處理時，由於其強調亮度的等級 變化，因此，可容易評價基板1上的亮度之不同，而可容 易判定以後的壓痕位準，如此較佳。 又，要強調該亮度的變化之影像處理方法，除了微分處 理以外也可使用眾所周知的邊緣檢測處理方法，其他也可 考慮使用差分處理等。 (匹配·檢查領域之特定） 在前述濃淡影像數據，對玻璃基板1之主數據（步驟2 3 ) 而使凸塊領域定位，依照該定位之凸塊領域而特定檢查領 域（步驟2 4 )。 基板1的主數據為藉設計圖面而抽出圖案數據和IC晶 片2或凸塊7等之位置資訊，使用此等資訊作成掩蔽影像。 12 312/發明說明書(補件)/93-09/93118200 1248518 此一掩蔽影像具有可依照設定之領域而選擇並作成掩蔽 份，再將其重疊在影像數據，而使其僅表示未掩蔽部份 影像數據，具有此一功能。 該掩蔽影像被重疊在所取得的基板1之前述影像數據 同時，在影像上匹配前述兩影像的面板電極4之邊緣彼 間，再使掩蔽影像中之主數據定位於前述影像數據。藉 定位，如圖4所示，在前述影像數據中，可正確地特定 面板電極4之無圖案部Q、圖案部P、及設計上之凸塊領 A 〇 例如，要檢查凸塊領域A内的壓痕位準時，藉前述主 據作成圖5所示之掩蔽影像。對前述影像數據重疊該掩 影像，在圖中僅表示以鏈線所示之凸塊領域A内的影像 此鏈線係根據前述主數據之設計上的凸塊領域 A，而虛 為表示無圖案部Q和圖案部P之境界。 所表示之凸塊領域A中，將接續至前述電極4、5相 間之一單位的凸塊領域A作為1個檢查領域C，該檢查 域C則可因應必要而分割為任意的數量、形狀所成的細 領域D。例如，在圖4所示之檢查領域C1中，如圖中之 分線B縱橫各別分割為2，則可成為合計4個的細分領域 另一方面，在檢查凸塊領域A外時，作成僅掩蔽該凸 領域A之掩蔽影像，而藉和上述同樣的作業，僅表示凸 領域A以外的影像。 (藉標準偏差檢測出壓痕位準） 在檢查領域特定前述凸塊領域A (步驟2 4 )，藉前述微 312/發明說明書(補件)/93·09/93118200 部 的 此 該 無 域 數 蔽 Ο 線 互 領 分 細 D〇 塊 塊 分 13 1248518 影像數據之影像亮度的標準偏差而檢測出檢查領域c之壓 痕位準（步驟2 5 )。 使用壓痕位準檢測之標準偏差的指標是因為，在一定領 域内可總和壓痕8的數量、強度之各因素的大小，而在各 領域可客觀的評定其壓痕位準。 在此一標準偏差的計算中，於前述凸塊領域A内，對1 個檢查領域C，將該領域C分割為前述細分領域D而作評 定時，其和未分割評定時之壓痕位準會有所不同。 圖8所示之微分影像中，壓痕8為，如圖中所示，在面 板電極4上之前述凸塊領域A附近會呈現出如前述般之白 色顆粒的集合。圖4為表示該圖8之凸塊領域A附近的模 式圖。 例如，在圖4所示之檢查領域C1，使C1分割為上下左 右a、b、c、d 4個細分領域D。對a、b、c、d全體作為檢 查領域C作評價並和細分為4分割之各別細分領域D之評 價作比較。在此處，檢查領域C 2被假定為具有和前述領域 C 1相同標準偏差之壓痕8的數量、強度之領域。 如圖中所示，在檢查領域C1中，分割為前述4個細分 領域D時，a、b、c、d的各別細分領域D之標準偏差之 數值明確示出其細分領域D各個的數值之偏差，在圖中特 別是對壓痕數目少的 b之細分領域作較低之評價。相對 的，未分割時由於前述細分領域D各個標準偏差數值的大 小互抵，因此，檢查領域C1評價變成和檢查領域C 2具有 相同之壓痕位準。 312/發明說明書(補件)/93-09/93118200 14 1248518 如此，藉對檢查領域c作分割，則可對在該檢查領域c 内壓痕8分佈之偏差作正確的評價。 又，此一分割假如分割太細時，則會過份顯現前述細分 領域D各個數值的偏差，其則變成難以客觀評價檢查領域 C全體的壓痕位準之良否。 在檢查此實施形態之基板1時，為容易對壓痕位準作評 價，採用使1個檢查領域C在上下左右各別作2分割，合 計成4分割之評價方法。 又，將此檢查領域C分割為細分領域D各個之條件由於 可自由設定，因此，可因應被要求的壓痕8之特性，而變 化細分領域D之數目及形狀。 又，藉對該標準偏差之數值是否在基準值内作確認則可 判定各個檢查領域C之壓痕位準的良否。例如，此一數值 太低時，則被判斷為因某種原因壓痕太弱或壓痕數目不 足，又，在此一數值太高時，則被判斷為在凸塊領域A内 因異物混入等而有異常的壓痕8。 又，此等評價之源頭的影像數據之影像亮度，顯微鏡1 0 會使基板1的焦點匹配狀況而帶來變化，其焦點和亮度之 關係為，焦點一致時其亮度變成最大，焦點偏離時則亮度 會有減低之傾向。因此，焦點不一致之基板1的前述標準 偏差之數值，比起形成有標準的壓痕8之標準偏差的數值 其全體會有較低的數值，因此，當和標準的數值比較時， 在前述步驟2 1中，則可抽出無法順利取得影像之基板1。 (以二值化數據檢測出壓痕數目） 15 312/發明說明書(補件)/93-09/93118200 1248518 其次，同樣在檢查領域C特定凸塊領域A (步驟2 4)，再 作成前述微分：影像資料之影像亮度的二值化數據（步驟 2 6 )，在該二值化數據中自檢查領域内的白面積和該白色部 份的形狀算出檢查領域C之壓痕數目。 使用壓痕數目之指標是因為在一定領域内藉壓痕8的數 量可把握其各個領域的導通之位置數，除了前述標準偏差 之指標評價外，可客觀的對導通之確實性作評價。 又，藉著確認所算出之壓痕數目在基準值以上時則可判 定前述IC晶片2之封裝狀態的良否。 但是，在判定前述壓痕位準時，使1個檢查領域C分割 為細分領域D時，例如，即使有壓痕數目不足之領域D存 在，但只要包含該領域D的檢查領域C全體其標準偏差之 指標的評價在一定位準以上時，亦有判定在該領域C中導 通可充份確保之情形。 但是，即使檢查領域 C全體其標準偏差之評價沒問題 時，在1個檢查領域C内只要存在有多數個壓痕不足之細 分領域D，則發生導通不良之機率會變高。 因此，將藉前述標準偏差之壓痕位準之評價，及對該二 值化數據之壓痕數目作評價而合併實施，則可設定前述細 分領域D各個的壓痕數目不低於基準值，同時，對未滿該 基準值之細分領域D的數量，可設定在1個檢查領域C内 不能超過的領域數目之上限。 根據此一構成，可把握細分領域D各個之壓痕數目，同 時，由於可對包含該細分領域D之檢查領域C全體的壓痕 16 312/發明說明書(補件)/93-09/93118200 1248518 數目、標準偏差等的壓痕位準作評價，因此，可以對 1C 晶片2的封裝部份之導通效能的良否以更詳細之基準作評 價。 除了此例以外，也可併用對複數個壓痕位準之評定的指 標作檢測，藉對此等數據及依照該指標所組合的基準值作 比較，再依照複數個指標而綜合評價I C晶片2之封裝狀 態。當然也可因應必要而單獨檢查評價各個項目。 又，上述二值化處理所使用之界限值雖然可自由設定， 但也可採用計測每領域的影像之微分位準，而自動設定為 最適合壓痕數目評價之界限值的構成。根據此一構成，不 管壓痕8不同特性所致的影像亮度之明暗，其均可容易地 實施二值化處理。 (異物混入之檢測） 其次，在檢查領域C特定凸塊領域A以外的領域（步驟 2 8 )，在前述二值化數據藉檢測出有無存在凸塊領域A以外 之白色部份，而判定存在於凸塊領域A以外偏位之壓痕8 或異物混入之壓痕8。 (圖案傷痕、圖案燒傷、圖案裂開） 又，除了在圖1所示之步驟以外，以和檢測出前述異物 混入同樣的方法可檢測出基板1不良的圖案傷痕、圖案燒 傷、圖案裂開等。 此等狀況，在前述微分干涉顯微鏡 1 0中，由於在全部 的影像數據呈現出影像亮度的變化，因此，藉評定前述對 每個檢查領域之影像亮度則可判定有無不良和類別。 17 312/發明說明書(補件)/93-09/93118200 1248518 (晶片偏位） 又，同樣的除了圖1所示之步驟以外，在前述影像數據， 自表示壓痕8群之各粒的檢測座標中，檢測出成為壓痕8 群中心之座標，即可檢測出I C晶片2的封裝位置之偏位。 要尋求此壓痕8群的中心座標時，在1檢查領域内所存 在之壓痕之中，對位於上下左右端部的壓痕8作特定，再 藉其上下左右兩端之壓痕8的座標，算出中心座標。比較 此中心座標及在前述主數據中之凸塊領域A的理論上之中 心座標，探求雙方的偏位之距離，再將此距離和基準值比 較而判定I C晶片2的封裝位置之良否。 上述實施形態之基板檢查裝置為藉適當組合可檢測出 上述所示的壓痕位準和壓痕數目之各種功能，而因應目的 選擇檢查項目並判定前述I C晶片2的封裝狀態。如藉事先 設定裝置的功能表則可自動的一次實施全部的檢查和判 定，因此其可迅速客觀的檢查I C晶片2之封裝狀態。 又，檢查對象之基板，除了可使用玻璃基板1之前述COG 以外，也可適用於具有透明基板之形式。又，在此檢查裝 置中，檢查對象並不限於在透明基板上封裝I C晶片2之檢 查對象，其也可對應使用撓性基板作為檢查對象。 以下依照圖9說明使用該基板檢查裝置之檢查方法及其 操作順序。 為了保全檢查結果之數據，檢查之作業者，首先輸入可 區別裝置的操作者和管理者本身的作業者之代碼並使裝置 起動（步驟17a)。 18 312/發明說明書(補件)/93-09/93】18200 1248518 其次，輸入從事檢查之作業者名稱、密碼、管理等級等 後，再登錄檢查對象之基板I c晶片等的主數據、該基板之 機種的資訊、檢查時程（步驟1 7 b )。 主數據為包含晶片的種類和凸塊的位置資訊等，基板之 機種的資訊為，包含對各機種必要之封裝零件的型號、圖 案·晶片之位置資訊、A C F的種類等。檢查時程為，在登 錄機種中登錄各封裝零件之檢查時程。此檢查時程可自由 地從各步驟中選擇而予以設定。 自步驟 1 8當開始作手動運轉時，在各種檢查機構中可 作調整作業或教示，並可對每1個起動、每1個步驟作内 容檢查之確認，可作參數之調整及光學系統之檢查等。 自步驟 19當開始作手動運轉時，則可沿著檢查時程自 動地實施一連串的檢查，其檢查結果可被自動的保存。此 一檢查結果及品質資訊、運轉狀況被在步驟2 0中輸出如此 而可結束檢查。 【圖式簡單說明】 圖1表示藉一實施形態之基板檢查裝置作檢查處理的詳 細流程圖。 圖2表示該實施形態之裝置的構成之說明圖。 圖3表示該實施形態之裝置的剖面之說明圖。 圖4表示壓痕之形成狀況的模式圖。 圖5表示圖4中之檢查領域的說明圖。 圖6表示該實施形態之檢查時的基板之載置狀況的說明 圖〇 19 312/發明說明書(補件)/93-09/93118200 1248518 C 檢查領域 D 檢查細分領域 Μ 液晶驅動基板 Ρ 圖案部 Q 無圖案部 W 工作台[Technical Field] The present invention relates to an inspection method for inspecting a package state of a component to a substrate. [Prior Art] At present, a liquid crystal drive used in various electronic devices such as mobile phones, as shown in FIG. 10, integrates COC (CIP on) of a 1C wafer 2 driven by a liquid crystal on a glass substrate 1 constituting a liquid crystal panel. The G form has been widely used. This COG is a glass substrate 1 on which a plurality of panel electrodes 4 are formed, and an IC chip 2 mounted thereon, and is sandwiched between the two. The two oppositely oriented anisotropic conductive materials 3 are formed as such, and the isoelectric material 3 is interposed, and the glass substrate 1 and the IC wafer 2 are integrated to form the surface of the IC wafer 2 with respect to the panel electrode 4 In the above, a plurality of wafer electrodes 5 must be electrically connected to a certain portion of the wafer electrode 4 to be electrically connected to a certain portion of the panel electrode 4. For conduction, as shown in FIG. 11, on the wafer electrode 5 The fixed portion of the fixed portion forms a set of slightly convex bumps 7 which are fixed to a certain portion of the plate electrode 4, and the IC substrate is disposed on the glass substrate 1. The method of forming the bumps 7 is generally used. Method for a plurality of tiny solder pellets in the foregoing certain range Further, when the glass substrate 1 and I 2 are disposed on the substrate 1 and the anisotropic conductive material 3 is interposed and heat-pressed, the resin contained in the conductive material 3 is heated and melted. As shown in Figure 1 1 312 / invention manual (supplement) / 93-09 / 93118200 and its moving substrate, its lass) IT0 and other substrate 1 ACF directionality. The side with & 5 seeks the part to be a pair of cymbals 2. The C wafer anisotropy is shown, and the interval between the bump surface 7 a of the wafer electrode 5 and the panel electrode 4 by 5 1248518 is narrower than the interval between the wafer electrode 5 and the panel electrode 4 without other portions of the bump 7 Therefore, the anisotropic conductive material 3 can relatively strongly compress the portion having the bumps 7. On the anisotropic conductive material 3, since a plurality of minute conductive particles 6 are contained, when the panel electrode 4 and the wafer electrode 5 are close by the above compression, only the portion of the bump 7 which is relatively strongly compressed will be electrically conductive. Particle 6 is turned on. In this state, by the curing of the ACF, a certain portion of the panel electrode 4 and the wafer electrode 5 are electrically connected to each other in a conductive state, and the plurality of contacts can be electrically connected and packaged on the glass substrate 1. IC chip 2. The reliability of the conduction or conduction during the conduction can be reduced by the degree of compression of the anisotropic conductive material 3, that is, the conductive particles 6 pressed by the bumps 7, which can be mostly and surely interposed in the panel electrode 4. Between the bumps 7 of the wafer electrode 5 and the bumps 7 between the electrodes 4 and 5 are reliably pressed, which is ensured. The degree of compression is determined by the height or size of the bumps 7 of the IC wafer 2 to be used, the density of the conductive particles 6 contained in the anisotropic conductive material 3, etc., due to the height or size of the bumps 7 There is a variation in the 1C wafer 2, and thus there is a variation in the above-described conduction state. Therefore, in order to confirm the degree of the compression, the formation of the indentation 8 formed on the panel electrode 4 can be observed by using the above-mentioned bump 7 or the like by borrowing, and this method can be used. The indentation 8 is pressed by the bump 7 and the conductive particles 6 toward the panel electrode 4 to be formed on the surface of the panel electrode 4, that is, the concave shape as shown in FIG. 11 / 312 (invention) A collection of variants of /93-09/93118200 1248518. When viewed from the inside of the substrate 1, the indentation 8 becomes a collection of convex deformed particles whose particles are formed by the convex marks formed by the bumps 7 and the conductive particle marks formed by the conductive particles 6. . If the height of the bump 7 is too low, or when the conductive particles 6 are not present on the bump 7, the strength of the indentation 8 becomes weak, and in addition, the number of the conductive particles 6 is too small in the certain bump region. In the case of a partial imbalance, the number of indentations 8 in the field is reduced, and in any of the above cases, proper conduction cannot be ensured. Further, when the bumps 7 are present outside the bump region and the foreign matter is mixed into the inside and outside of the bump region, the substrate 1 and the IC wafer 2 cannot ensure normal conduction because they are formed with abnormal indentations. Therefore, in order to judge whether the indentation 8 is good or not, it is necessary to use a microscope or the like to view with the naked eye, or to visually view the image data obtained by the microscope, and compare the sample of the badly prepared panel, etc., on the one hand, and compare and evaluate The formation state of the indentation 8 described above is to inspect the package state of the glass substrate 1 and the IC wafer 2. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) However, the above inspection is to visually confirm the formation of the number of indentation strengths or indentations, which is determined by the inspector's feeling for each minute indentation. Good or bad, but according to the inspector's judgment, there may be different inspection results, so it lacks objectivity. Further, since it is necessary to perform inspecting items such as indentation strength, number of indentations, distribution, offset, and foreign matter in the entire field of the bumps, it takes a lot of inspection time. 7 312/Invention Manual (Supplement)/93-09/93118200 1248518 Therefore, the object of the present invention is to detect the formation of an indentation in a short time based on an objective standard. (Means for Solving the Problems) In order to solve the above problems, the substrate inspection apparatus and inspection method of the present invention is to obtain a package portion of an IC wafer obtained by mounting a morning surface of the transparent substrate on which an IC chip is mounted on a surface by a differential interference microscope. The image data 'is in the field of specific inspection in the key data. According to the brightness of the image in the inspection field, the number of indentation marks or indentations of the indentations of the panel electrodes formed by the bumps and the conductive particles on the transparent substrate is detected, and the indentation level or the number of indentations and the reference are determined. The package state of the IC chip is determined by comparison of values. The intensity of the indentation occurring on the panel electrode on the substrate may be different from the image brightness described above. Therefore, if the brightness of the image is quantized, the indentation position in the determined inspection field can be detected. The number of quasi-or indentations, in addition, by the field of specific inspection, and by the aforementioned indentation level or the number of indentations can objectively determine the quality of the package state of the IC wafer. Further, the image data may be subjected to edge detection processing by using the image data obtained by the differential interference microscope. An example of this edge detection processing is, for example, differential processing of an image. According to this configuration, in the image data, the indentation and the difference in the peripheral portion thereof can be emphasized, and the difference in the brightness of the image can be clearly expressed due to the difference, so that the boundary of the specific indentation can be clarified and the evaluation can be easily performed. Its indentation. Further, main data such as a pattern of a panel electrode of the substrate may be matched to the image data, and a bump field may be positioned in the image data, and an inspection field may be specified according to the convex field of the positioning, and The 8 312 / invention manual (supplement) / 93-09 / 93118200 1248518 inspection field freely divided, such a means is also possible. According to this configuration, since the field of the inspection and the field of the judgment can be distinguished, the inspection field can be distinguished for the purpose of inspection. Further, by dividing the inspection field, the deviation of the indentation distribution in one inspection can be evaluated. According to the substrate inspection apparatus and the inspection method of the above-described means, the specific configuration of detecting the indentation level is such that in the inspection field, the indentation level measurement is performed according to the standard deviation of the image brightness of the image data. Considering the binarization of the image brightness of the image data, the eyesight is detected according to the area and shape of the white or black portion, and the composition is compared by using the data of the data alone or in combination. The package state of the aforementioned IC chip can be determined. Further, in the case where a flexible substrate is used instead of I C, the same method as described above can be used. (Effect of the invention) According to the present invention, the package state of the IC chip can be inspected in a short time on an objective basis. [Embodiment] Figs. 1 to 9 show a substrate inspecting apparatus according to an embodiment. The substrate inspecting apparatus of this embodiment is an anisotropic conductive material 3 containing conductive particles 6 on a panel electrode 4 on a glass substrate 1. The wafer electrode 5 on the 1C wafer 2 on which the sheet 2 is placed is pressed against the substrate IC wafer 2, and the conductive material 3 is electrically conductive by the bumps 7 on the wafer electrode 5 of the IC wafer 2, At the same time, the indentation 8 is generated in the electrode 4, and the number of inspections before the pre-illumination is obtained from the field of the anisotropy guide 312/invention specification (supplement)/93-09/93118200 of the indentation 8 portion. Trace reference wafers should be. The substrate is implemented: the conductivity of the dielectric material of the 1C crystal 1 and the compression panel material 9 1248518, the panel electrode 4 is connected to the wafer electrode 5, and the indentation level and the indentation of the indentation 8 formed on the panel electrode 4 are detected. The number of packages in which the liquid crystal drive substrate of the IC wafer 2 is packaged on the transparent substrate 1 and the IC chip 2 of the glass substrate 1 is determined. Here, the indentation level means that when the IC wafer 2 is mounted on the glass substrate 1, the surface of the panel electrode 4 is pressed against the bumps 7, the conductive particles 6, and the like, and the surface is deformed into a concave height, and The index of how the deformation is distributed within a certain range to evaluate the formation state of the indentation 8. Further, the number of indentations indicates the number of deformations in the concave shape. The structure of the device, as shown in Fig. 2, is freely movable in the direction of the Χ and Υ axes, and can be moved up and down in the direction of the Ζ axis, or on the work stage W on the 0 axis in the Χ-Υ plane. The liquid crystal drive substrate Μ is placed inside and placed thereon. The Ζ axis is used to adjust the focus, and the 0 axis is used to adjust the scanning direction of the camera. The CPU 16 controls the operation of the table W by the input and output of the board 14 and the control panel 15, and the differential interference microscope 10 that is connected to the CCD camera 1 disposed above is opposed to the liquid crystal drive substrate. The substrate Μ is immersed and placed on the table W shown in FIG. 6, and the table W is a structure that can correspond to a multi-system type substrate. The plurality of substrates can be placed by the coordinate management of the mounting place. . The CPU 16 is a personal computer that uses two mechanical controls and image processing, and each of them is processed in parallel and realizes high-speed processing. The differential interference microscope 10 receives light from the light source of the illumination 11. As shown by the arrow a in Fig. 3, the image data is obtained from the inside of the glass substrate 1, 10 312/invention specification (supplement)/93-09/93118200 1248518 The image data is transmitted to the image processing board 13 by the high resolution CCD camera 12. The image data is stored in C P U 16 and indicated on the appropriate surface. Further, the illumination 1 1 may be irradiated from the direction of the arrow a and the direction indicated by the arrow b from the direction of the package surface of the glass substrate 1, wherein the illumination 1 1 is irradiated from the direction of the arrow a in order to prevent the substrate 1 from being irradiated Since the unevenness of the upper panel electrode 4 generates an image, it is preferable that the illumination is coaxial. Further, in order to clearly grasp the change in the brightness of the unevenness of the indentation 8 of the subtle metal deformation, the microscope 10 must be a differential interference microscope. The obtained shading image data can be subjected to image processing in response to the purpose in the CPU 16 or the like, and then the above-described various indentation levels and indentation numbers are detected by the processing shown below, and the respective pressures are applied. The package state of the IC wafer 2 on the glass substrate 1 is determined by comparing the reference value of the number of traces and the number of indentations or the reference value of the combination of the indentation level and the number of indentations. Hereinafter, the inspection flow in the apparatus will be described with reference to the flowchart of FIG. 1. (Acquisition and Differential Processing of Image Data) The shading image data (step 21) of the glass substrate 1 obtained from the microscope 10 and the C C D camera 1 is differentially processed by the CPU 16 (step 2 2 ). The term "differential processing" as used herein refers to the degree of change in the level of brightness of a continuous portion of a shading image, and more emphasis on the discontinuous portion of the brightness, and the realm of a significant portion of the change in brightness, This is characteristic of it. By the differential processing, for example, the shading image of the substrate 1 shown in Fig. 7 can be changed to the differential image shown in Fig. 8. 7 and 8 are diagrams showing the image of the image indicated by the 11 312/invention specification (supplement)/93-09/93118200 1248518, which is different in hue from the image of the real image represented by the facet. In the shading image of Fig. 7, in general, the pattern portion 面板 of the panel electrode 4 in which τ is present is a gray tone and the non-pattern portion Q is black. At this time, the indentation 8 which protrudes inward on the panel electrode 4 has a thicker color than the circumference, and its concentration is such that a higher color is obtained when the height of the bump is higher. The differential image of FIG. 8 is that in the shading image of FIG. 7, the discontinuous portion of the image brightness level is only in the realm of the indentation 8 and the pattern portion, and the boundary between the pattern portion and the non-pattern portion Q. Presented in white. At this time, the indentation 8 shows that the higher the above-mentioned protruding height, the more white is emphasized. Here, the differential processing of the image is not performed, and in the normal shading image, the following indentation level detection may be performed. However, if the image data is subjected to the above-described differential processing, the level of brightness is emphasized. Since it is changed, the difference in the brightness on the substrate 1 can be easily evaluated, and the subsequent indentation level can be easily determined, which is preferable. Further, in order to emphasize the image processing method of the change in luminance, a well-known edge detection processing method can be used in addition to the differential processing, and other differential processing or the like can be considered. (Specification in the field of matching and inspection) In the above-described shading image data, the bump area is positioned on the main data of the glass substrate 1 (step 2 3 ), and the inspection area is specified in accordance with the bump area of the positioning (step 24). The main data of the substrate 1 is obtained by extracting pattern data and position information of the IC wafer 2 or the bumps 7 by the design drawing surface, and using such information to create a mask image. 12 312/Inventive Manual (Supplement)/93-09/93118200 1248518 This masked image has the option of selecting and making a masking according to the set field, and then superimposing it on the image data so that it only represents the unmasked portion. Image data with this feature. The mask image is superimposed on the acquired image data of the substrate 1 while matching the edges of the panel electrodes 4 of the two images on the image, and then positioning the main data in the mask image to the image data. By positioning, as shown in FIG. 4, in the image data, the non-pattern portion Q of the panel electrode 4, the pattern portion P, and the design of the bump collar A can be correctly specified, for example, to check the bump area A. When the indentation level is on time, the masking image shown in FIG. 5 is created by the above-mentioned main data. The mask image is superimposed on the image data, and only the image in the bump field A indicated by the chain line is shown in the figure. The chain line is based on the bump field A on the design of the main data, and the virtual line indicates no pattern. The boundary between the part Q and the pattern part P. In the bump area A shown, the bump area A which is connected to one of the electrodes 4 and 5 is regarded as one inspection area C, and the inspection area C can be divided into an arbitrary number and shape as necessary. The fine area D. For example, in the inspection field C1 shown in FIG. 4, when the division line B is divided into two in the vertical and horizontal directions in the figure, the total of four subdivisions can be obtained. On the other hand, when the inspection is performed outside the bump area A, Only the mask image of the convex field A is masked, and only the image other than the convex field A is represented by the same operation as described above. (Detecting the indentation level by the standard deviation) In the inspection field, the aforementioned bump area A (step 2 4), by the aforementioned micro 312/invention specification (supplement)/93·09/93118200 The indentation line of the inspection field c is detected by the standard deviation of the image brightness of the image data (step 2 5 ). The index of the standard deviation using the indentation level detection is because the magnitude and intensity of the indentation 8 can be summed in a certain area, and the indentation level can be objectively evaluated in each field. In the calculation of this standard deviation, in the above-mentioned bump field A, for one inspection field C, when the field C is divided into the aforementioned sub-division D, the indentation level is evaluated when it is undivided. It will be different. In the differential image shown in Fig. 8, the indentation 8 is such that, as shown in the figure, a collection of white particles as described above appears in the vicinity of the aforementioned bump area A on the panel electrode 4. Fig. 4 is a view showing the vicinity of the bump area A of Fig. 8. For example, in the inspection field C1 shown in Fig. 4, C1 is divided into four subdivision fields D of up, down, left, right a, b, c, and d. All of a, b, c, and d are evaluated as the inspection field C and compared with the evaluation of the respective subdivisions D subdivided into four divisions. Here, the inspection field C 2 is assumed to be the field of the number and strength of the indentations 8 having the same standard deviation as the aforementioned field C 1 . As shown in the figure, in the inspection field C1, when the above four subdivisions D are divided, the values of the standard deviations of the respective subdivisions D of a, b, c, and d clearly show the values of the respective subdivisions D. The deviation is particularly low in the figure for the subdivision of b with a small number of indentations. On the other hand, in the case of undivided, since the magnitudes of the respective standard deviation values of the aforementioned subdivision D are mutually offset, the inspection field C1 evaluation becomes the same indentation level as the inspection field C 2 . 312/Invention Manual (Supplement)/93-09/93118200 14 1248518 Thus, by dividing the inspection field c, the deviation of the distribution of the indentation 8 in the inspection field c can be correctly evaluated. Further, if the division is too thin, the deviation of each numerical value of the subdivided field D is excessively expressed, which makes it difficult to objectively evaluate the indentation level of the entire inspection area C. When the substrate 1 of this embodiment is inspected, it is easy to evaluate the indentation level, and an evaluation method in which one inspection area C is divided into two in the up, down, left, and right directions is used. Further, since the conditions for dividing the inspection area C into the subdivision area D can be freely set, the number and shape of the subdivision area D can be changed in accordance with the characteristics of the required indentation 8. Further, whether or not the value of the standard deviation is confirmed within the reference value can determine whether the indentation level of each inspection field C is good or not. For example, when the value is too low, it is judged that the indentation is too weak or the number of indentations is insufficient for some reason, and when the value is too high, it is judged that the foreign matter is mixed in the bump field A or the like. And there are abnormal indentations 8. Moreover, the image brightness of the image data at the source of these evaluations causes the microscope 10 to change the focus of the substrate 1, and the relationship between the focus and the brightness is such that when the focus is the same, the brightness becomes maximum, and when the focus is deviated, There is a tendency for the brightness to decrease. Therefore, the value of the aforementioned standard deviation of the substrate 1 in which the focus is inconsistent is lower than the value of the standard deviation of the standard indentation 8, so that when compared with the standard value, the above steps are performed. In 2 1 , the substrate 1 in which the image cannot be obtained smoothly can be extracted. (Detecting the number of indentations by binarized data) 15 312/Invention Manual (Supplement)/93-09/93118200 1248518 Secondly, in the inspection field C, the specific bump area A (step 2 4) is used to make the aforementioned differential : Binarization data of image brightness of the image data (step 26), in which the number of indentations in the inspection field C is calculated from the white area in the inspection area and the shape of the white portion in the binarized data. The index of the number of indentations is used because the number of indentations in each field can be grasped by the number of indentations 8 in a certain field, and the accuracy of the conduction can be objectively evaluated in addition to the evaluation of the standard deviation. Further, by confirming that the calculated number of indentations is equal to or greater than the reference value, the quality of the package state of the IC chip 2 can be determined. However, when determining the indentation level, when one inspection area C is divided into the subdivision area D, for example, even if there is a field D in which the number of indentations is insufficient, the standard deviation of the entire inspection field C including the field D is included. When the evaluation of the index is above the target level, there is also a case where it is determined that the conduction in the field C can be sufficiently ensured. However, even if there is no problem in the evaluation of the standard deviation of the entire inspection area C, if there is a plurality of fine areas D in which the indentation is insufficient in one inspection area C, the probability of occurrence of conduction failure becomes high. Therefore, by evaluating the indentation level of the standard deviation and evaluating the number of indentations of the binarized data, the number of indentations of each of the subdivided fields D can be set to be not lower than the reference value. At the same time, for the number of subdivisions D that are less than the reference value, the upper limit of the number of fields that cannot be exceeded in one inspection area C can be set. According to this configuration, the number of indentations of each of the subdivisions D can be grasped, and at the same time, since the indentation 16 312/invention specification (supplement)/93-09/93118200 1248518 can be applied to the entire inspection field C including the subdivision D. The indentation level of the number, the standard deviation, and the like is evaluated. Therefore, it is possible to evaluate the conductivity of the package portion of the 1C wafer 2 on a more detailed basis. In addition to this example, it is also possible to use a combination of the evaluation of the plurality of indentation levels, and compare the data with the reference values combined according to the index, and then comprehensively evaluate the IC chip according to the plurality of indicators. The package state. Of course, it is also possible to individually check and evaluate each item as necessary. Further, although the threshold value used in the binarization processing can be freely set, it is also possible to automatically set the threshold value for the evaluation of the number of indentations by measuring the differential position of the image for each field. According to this configuration, the binarization processing can be easily performed regardless of the brightness of the image brightness due to the different characteristics of the indentation 8. (Detection of foreign matter incorporation) Next, in the field other than the specific bump area A in the inspection field C (step 28), the presence of the white portion other than the bump area A is detected in the binarized data, and the presence is determined. The indentation 8 which is located outside the bump area A or the indentation 8 in which the foreign matter is mixed. (pattern scratches, pattern burns, pattern cracking) In addition to the steps shown in FIG. 1, the pattern damage, pattern burn, pattern cracking, etc. of the substrate 1 can be detected by the same method as the detection of the foreign matter. . In such a situation, in the differential interference microscope 10, since the image brightness changes in all the image data, it is possible to determine whether or not there is a defect or a category by evaluating the image brightness for each inspection area. 17 312/Invention Manual (Supplement)/93-09/93118200 1248518 (Dislocation of the wafer) Further, in addition to the steps shown in Fig. 1, in the above-mentioned image data, the detection of each particle representing the indentation 8 group In the coordinates, the coordinates of the center of the indentation 8 group are detected, and the position of the package position of the IC wafer 2 can be detected. When seeking the center coordinates of the 8 groups of the indentations, among the indentations existing in the 1 inspection area, the indentations 8 located at the upper, lower, left and right end portions are specified, and the indentations 8 of the upper, lower, left and right ends are used. Coordinates, calculate the center coordinates. Comparing the center coordinates with the theoretical center coordinates of the bump field A in the main data, the distance between the two sides is searched, and the distance is compared with the reference value to determine whether the package position of the I C wafer 2 is good or not. The substrate inspecting apparatus of the above-described embodiment has various functions for detecting the indentation level and the number of indentations described above by an appropriate combination, and selects an inspection item in accordance with the purpose and determines the package state of the IC chip 2. By performing the function table of the device in advance, all the inspections and determinations can be automatically performed at one time, so that the package state of the IC chip 2 can be quickly and objectively checked. Further, the substrate to be inspected may be applied to a substrate having a transparent substrate in addition to the COG of the glass substrate 1. Further, in the inspection apparatus, the inspection object is not limited to the inspection object in which the IC chip 2 is packaged on the transparent substrate, and the flexible substrate may be used as the inspection object. The inspection method using the substrate inspection apparatus and the operation sequence thereof will be described below with reference to Fig. 9 . In order to preserve the data of the inspection result, the operator of the inspection first inputs the code of the operator of the distinguishable device and the operator of the manager himself and starts the device (step 17a). 18 312/Inventive Manual (Supplement)/93-09/93] 18200 1248518 Next, after inputting the name, password, management level, etc. of the operator who is performing the inspection, the main data of the substrate Ic wafer or the like to be inspected is registered, Information on the model of the substrate, inspection time (step 1 7 b ). The main data includes the type of the wafer and the position information of the bumps, and the information of the model of the substrate includes the model number of the package parts necessary for each model, the position information of the pattern, the wafer, and the type of A C F . The inspection schedule is the time course for logging in the package parts in the login model. This inspection schedule can be freely selected from each step. When the manual operation is started in step 18, adjustment work or teaching can be performed in various inspection institutions, and the content inspection can be performed for each start and every step, and the parameters can be adjusted and the optical system can be used. Check and so on. From step 19 when the manual operation is started, a series of inspections can be automatically performed along the inspection schedule, and the inspection results can be automatically saved. This inspection result, quality information, and operation status are output in step 20, and the inspection can be ended. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a detailed flow chart showing an inspection process by a substrate inspection apparatus of an embodiment. Fig. 2 is an explanatory view showing the configuration of the apparatus of the embodiment. Fig. 3 is an explanatory view showing a cross section of the apparatus of the embodiment. Fig. 4 is a schematic view showing the state of formation of an indentation. Fig. 5 is an explanatory view showing the field of inspection in Fig. 4. Fig. 6 is a view showing the mounting state of the substrate during the inspection of the embodiment. Fig. 19 312 / invention specification (supplement) / 93-09/93118200 1248518 C inspection area D inspection subdivision area 液晶 liquid crystal drive substrate 图案 pattern portion Q No pattern part W workbench
312/發明說明書(補件)/93-09/93118200 21312/Invention Manual (supplement)/93-09/93118200 21