TWI244744B - Flat package for circuit components having soldered metallic contact terminal blocks with lateral surface and process of fabricating the same - Google Patents
Flat package for circuit components having soldered metallic contact terminal blocks with lateral surface and process of fabricating the same Download PDFInfo
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- TWI244744B TWI244744B TW093129401A TW93129401A TWI244744B TW I244744 B TWI244744 B TW I244744B TW 093129401 A TW093129401 A TW 093129401A TW 93129401 A TW93129401 A TW 93129401A TW I244744 B TWI244744 B TW I244744B
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- circuit
- conductive
- flat
- grain
- circuit element
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- 238000000034 method Methods 0.000 title claims description 22
- 238000005476 soldering Methods 0.000 claims abstract description 38
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 238000007789 sealing Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 48
- 239000013078 crystal Substances 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000003466 welding Methods 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 235000013339 cereals Nutrition 0.000 claims 22
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- APTZNLHMIGJTEW-UHFFFAOYSA-N pyraflufen-ethyl Chemical compound C1=C(Cl)C(OCC(=O)OCC)=CC(C=2C(=C(OC(F)F)N(C)N=2)Cl)=C1F APTZNLHMIGJTEW-UHFFFAOYSA-N 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 238000007493 shaping process Methods 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 101100203566 Caenorhabditis elegans sod-3 gene Proteins 0.000 description 1
- 101100533820 Rattus norvegicus Sod3 gene Proteins 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4007—Shape of bonding interfaces, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Multi-Conductor Connections (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
1244744 五、發明說明(1) [技術領域] 本發明大致係有關於電路元件(circuit components) 之封裝(p a c k a g e ),特別是有關於一種適於低成本高效率 自動化大量生產,具有良好導電性質接觸端子(contact terminals),具良好散熱性質,適用於高功率電路元件之 平片型封裝(Flat Package)。 [先前技術] 諸如二極體(diode),電晶體(transistor),電阻 (resistor)與電容(capacitor)等的主動及被動式電路元 件(active and passive circuit components),乃是廣 泛應用於電子電路中之電路元件。不論是小信號(s i gna !) 或較大功率(p 〇 we r )用途的,線性(1丨n e a r )或數位 (d i g i t a 1 )性質的電路,皆需應用到此些不同性質的離散 式電路元件。除了整合於積體電路之中的二極體,電阻與 電谷寺之外’離散元件(discrete component)形式的二極 體,電與電容等元件,是為使用量極大的電子零件。 離散式電路元件有多種型式的包裝(packaging)。基 於小型化的需求’表面黏著技術(SMT, surface-mount technology)型式之離散式元件,已逐漸變成微型化電子 裝置所需採用的電路元件。以低成本進行高速率的大量生 產,乃疋製造此類離散式電路元件必要的作法。1244744 V. Description of the invention (1) [Technical Field] The present invention relates generally to a package of circuit components, and more particularly to a method suitable for low-cost and high-efficiency automated mass production with good conductive properties. Contact terminals have good heat dissipation properties and are suitable for flat package of high power circuit components. [Previous technology] Active and passive circuit components such as diodes, transistors, resistors, and capacitors are widely used in electronic circuits. Circuit components. Regardless of the small signal (si gna!) Or high power (p 〇we r) use, linear (1 丨 near) or digital (digita 1) nature of the circuit, need to be applied to these discrete circuit of different properties element. In addition to diodes, resistors and electric valleys integrated in integrated circuits, diodes in the form of discrete components, electricity and capacitors, are electronic components that are used in large quantities. There are many types of packaging for discrete circuit components. Based on the demand for miniaturization, surface-mount technology (SMT) type discrete components have gradually become circuit components required for miniaturized electronic devices. Mass production at a high rate at a low cost is necessary to make such discrete circuit components.
1244744 五、發明說明(2) S Μ T離散式電路元件的電接觸端子係利用其接觸端子的實 質面積吃錫,而將元件本身軟銲於印刷電路板上。S Μ Τ元 件並無凸形插入於印刷電路板孔洞内的電接觸端子,因此 必須依賴足夠大的吃錫面積才能夠穩固地將元件銲固於印 刷電路板的定位之上,並擁有良好的電接觸品質,特別是 大功率用途時為然。 不過,習知技術之SM Τ型式離散式電路元件之電接觸 端子銲錫面雖然具有足夠大的面積,但其連結至其内部晶 粒之對應電接觸端子的電性連結通路,並未具有最佳化的 導電性質。例如,某些習知元件之此内部電連結通路是彎 曲而拉長的。雖然其導電通路之阻抗特性於小信號用途中 足可應付,但卻無法適合於大功率的應用場合。若要使用 於大功率用途之中,其整體元件體積便必須成比例地放 大,才足以符合大功率的大電流需求。 [發明内容] 因此,本發明之目的即在於提供一種電路元件之具側 邊接面銲接平片型封裝及其製作方法,可適於自動化大量 生產具有良好導電及散熱性質之電接觸端子,特別適用於 高功率電路元件之用途。 為達前述目的,本發明提供電路元件之一種具側邊接 面銲接無導接腳平片型封裝,其包含有一平片型封裝本體 與至少二個電接觸端子。平片型封裝本體包含有水氣密封1244744 V. Description of the invention (2) The electrical contact terminals of SMT discrete circuit components use the actual area of the contact terminals to eat tin, and the components themselves are soldered to the printed circuit board. SMT components do not have electrical contact terminals that are convexly inserted into the holes of the printed circuit board. Therefore, it is necessary to rely on a large enough soldering area to be able to firmly solder the components to the position of the printed circuit board and have a good Electrical contact quality, especially for high power applications. However, although the soldering surface of the electrical contact terminal of the SM T type discrete circuit element of the conventional technology has a sufficiently large area, the electrical connection path of the electrical contact terminal corresponding to the internal crystal grains does not have the best Conductive properties. For example, this internal electrical connection path of some conventional components is curved and elongated. Although the impedance characteristics of its conductive path are adequate for small signal applications, it is not suitable for high power applications. If it is used in high-power applications, its overall component volume must be proportionally enlarged to meet the high-power and high-current requirements. [Summary of the Invention] Therefore, the object of the present invention is to provide a flat-chip package with a side contact surface welding of a circuit element and a manufacturing method thereof, which can be suitable for the automated mass production of electrical contact terminals with good conductivity and heat dissipation properties. Suitable for high power circuit components. In order to achieve the foregoing object, the present invention provides a flat chip type package of a circuit element with a side contact welding and no lead pins, which includes a flat chip type package body and at least two electrical contact terminals. Flat chip package body contains water vapor seal
1244744 五、發明說明(:3) 裝材料水氣密地包封該電路元件之至少一電路元件晶粒。 電接觸端子分別電性地連接至該至少一電路元件晶粒之對 應電路節點,其中之一係以金屬導體將該晶粒之一電路節 點電性銲接至其對應電接觸端子;。每一個該些電接觸端 子各包含有一水平銲錫表面露出於該封裝本體之銲接面之 外表面上,以及露出於談封裝本體之外表面上並實質上垂 直於該銲接面的一側邊接面;且該水平銲錫表面與該側邊 接面可將該電接觸端子銲固於於一印刷電路板之對應線路 銲墊上,以將該封裝組裝於該印刷電路板上。其中該些電 接觸端子各係由單一導電性材質製作成形。 本發明並提供於一導電性材質之基板上製作電路元件 之具側邊接面銲接無導接腳平片型封裝之一種方法,該基 板之晶粒面上形成有一個矩陣複數個的元件晶粒面導電線 路,每一個該些晶粒面導電線路各包含有實體上互相獨立 之一第一導電段及一第二導電段;該製作方法其步驟包含 有:(a) 在該晶粒面之晶粒導電線路之第一導電段上定置 一元件晶粒,將該晶粒之第一電極電性地連結至該晶粒導 電線路之第一導電段,並將該元件晶粒之第二電極電性地 連結至該晶粒導電線路之該第二導電段,其中之一係以金 屬導體將該晶粒之一電路節點電性銲接至其對應電接觸端 子;(b) 以電性絕緣物質水氣密地完全包覆該基板該晶粒 面上之該些元件晶粒及其所有該些導電線路;(c ) 於該基 板反對於該晶粒面之銲接面上,實質位於該第一及第二導 電段間之位置進行蝕刻,其蝕達到可使該第一及第二導電1244744 V. Description of the invention (: 3) The packing material encapsulates at least one circuit element die of the circuit element in an air-tight manner. The electrical contact terminals are respectively electrically connected to corresponding circuit nodes of the at least one circuit element die, one of which is to electrically solder a circuit node of the die to its corresponding electrical contact terminal with a metal conductor; Each of these electrical contact terminals includes a horizontal solder surface exposed on the outer surface of the soldering surface of the package body, and a side contact surface exposed on the outer surface of the package body and substantially perpendicular to the soldering surface. And the horizontal solder surface and the side contact surface can solder the electrical contact terminal to a corresponding circuit pad of a printed circuit board to assemble the package on the printed circuit board. Each of these electrical contact terminals is made of a single conductive material. The invention also provides a method for fabricating a circuit element on a substrate made of a conductive material with a side contact surface and a non-lead flat-chip package. The matrix has a plurality of element crystals formed on a grain surface of the substrate. Grain-surface conductive lines, each of the grain-surface conductive lines includes a first conductive segment and a second conductive segment that are physically independent from each other; the steps of the manufacturing method include: (a) on the grain surface An element die is set on the first conductive segment of the grain conductive circuit, and the first electrode of the die is electrically connected to the first conductive segment of the grain conductive circuit, and the second The electrode is electrically connected to the second conductive segment of the grain conductive line, one of which is to electrically solder a circuit node of the grain to its corresponding electrical contact terminal with a metal conductor; (b) is electrically insulated The material water completely and air-tightly covers the element crystal grains and all the conductive lines on the crystal grain surface of the substrate; (c) the soldering surface of the substrate opposing the crystal grain surface is substantially located on the first surface; Position between the first and second conductive segments Etching which can etch reaches the first and second conductive
第9頁 1244744 五、發明說明u:) 段互相電性分隔開之深度:(d) 於該銲接面上,實質位於 每兩相鄰該些電路元件之電性相連第一及第二導電段間之 位置進行蝕刻,其蝕達到可使該相連第一及第二導電段互 相電性分隔開之深度,並分別形成該兩相連第一及第二導 電段之各自側邊接面;與(e ) 切割該被水氣密封之基板, 以將所有該些元件晶粒分割成為個體獨立之離散式電路元 件。 [實施方式] 圖1顯示用於製作本發明電路元件平片型封裝較佳實 施例電路元件之基板晶粒面之立體圖。如圖所示,用以承 載整個矩陣排列的,典型多達數百個離散式電路元件的基 板100 ’其晶粒面110之表面上安排有多組成對的離散式電 路元件之初始導電線路1 1 1 A,1 1 1 B,1 1 2A,1 1 2B,…及 1 1 6 A,1 1 6 B等,其係排列於如圖中所顯示的,一個二維正 交的矩陣之中。矩陣中每一個元件之大致範圍係以虛線標 示出,例如,虛線範圍1 2 3所標示的範圍内包含有相鄰兩 導電線路1 1 3A及1 13B,雖然導電線路113人,在此製程初始 階段仍是與相鄰元件1 2 2的導電線路1 1 2 B電性連結在一 起。圖中之虛線大致標示出兩者之間的相對界線位置。注 意到基板1 0 0本身,在此製程早期階段,亦係被使用作為 本發明整批製作,數量眾多的電路元件之基礎承載片板用 途。Page 9 1244744 V. Description of the invention u :) Depth of electrical separation between each other: (d) On the soldering surface, it is substantially located at the electrical connection between each two adjacent circuit elements of the first and second conductive Etching is performed at the positions between the segments to a depth that can electrically separate the connected first and second conductive segments from each other, and respectively form respective side interfaces of the two connected first and second conductive segments; And (e) cutting the water-air-sealed substrate to divide all the element dies into individual discrete circuit elements. [Embodiment] Fig. 1 shows a perspective view of a crystal grain surface of a substrate of a circuit element of a preferred embodiment of a flat-chip package of a circuit element of the present invention. As shown in the figure, the substrate 100 ′, which typically has hundreds of discrete circuit elements arranged to support the entire matrix arrangement, has a plurality of pairs of discrete circuit elements on the surface of the grain surface 110 of the initial conductive line 1. 1 1 A, 1 1 1 B, 1 1 2A, 1 1 2B, ... and 1 1 6 A, 1 1 6 B, etc. are arranged in a two-dimensional orthogonal matrix as shown in the figure . The approximate range of each element in the matrix is indicated by a dashed line. For example, the range indicated by the dashed line range 1 2 3 includes two adjacent conductive lines 1 1 3A and 1 13B. Although there are 113 conductive lines, the initial process of this process The stage is still electrically connected with the conductive line 1 1 2 B of the adjacent element 1 2 2. The dotted line in the figure roughly indicates the relative boundary position between the two. Note that the substrate 100 itself, in the early stages of this process, was also used as the base carrier sheet for a large number of circuit elements produced in batches according to the present invention.
1244744 五、發明說明(5) 圖1所顯示之基板,作為本發明離散式電路元件之基 礎,其基板整片係為具良好導電性的板材,其可以是,例 如銅質片材所製作形成之板材。圖1中所顯示基板1 0 0其上 的所有導電線路,可以利用諸如顯影蝕刻之類的技術 (photolithography)製作而成 〇 圖2係為圖1之局部放大圖,其顯示基板晶粒面之初始 導電線路之構形細節。圖1及2之中,每一個以虛線所圍繞 之矩形區域,如同前述,係代表一個離散電路元件之實體 範圍。例如圖2所示,虛線1 2 4所標示的範圍係為本發明一 個完整離散式電路元件的實體範圍,其中,於範圍1 2 4内 大致中心之處,如虛線區域1 5 4所標示的位置,係為元件 晶粒所將定置之位置。 注意到如圖2之立體圖中所顯示的,導電線路在基板 1 0 0晶粒面1 1 0上沿其長軸方向(圖中之水平方向)之不對稱 圖形。依據本發明離散式電路元件之一較佳實施例,其導 電線路於圖2中所顯示一個別元件之元件個體腳印 (component footprint)範圍122内,沿其短軸方向(圖中 之垂直方向),導電線路1 1 2A與1 1 2B實質上係呈現大致對 稱的圖形。不過,如同習於本技藝者所可以理解的,未為 對稱的導電線路圖形同樣亦是可行的。 導電線路1 12A與1 12B,實質上係屬實體互相獨立之兩 導電圖形。導電線路112A與112B兩者各具有一段朝向元件 中心延伸之導電線段。兩導電線路其中之一朝向元件中 心,即元件晶粒所將定置之定位延伸,另一導電線路則未1244744 V. Description of the invention (5) The substrate shown in FIG. 1 serves as the basis of the discrete circuit element of the present invention. The entire substrate is a plate with good electrical conductivity, which can be formed, for example, from a copper sheet. Plate. All conductive lines on the substrate 100 shown in FIG. 1 can be made by using technology such as development etching (photolithography). FIG. 2 is a partial enlarged view of FIG. 1, which shows the grain surface of the substrate. Details of the configuration of the initial conductive line. In Figures 1 and 2, each rectangular area surrounded by a dashed line, as before, represents the physical extent of a discrete circuit element. For example, as shown in FIG. 2, the range indicated by the dashed line 1 2 4 is the physical range of a complete discrete circuit component of the present invention. Among them, at the approximate center of the range 1 2 4, as indicated by the dashed area 1 5 4 The position is the position where the element die will be positioned. Note that as shown in the perspective view of FIG. 2, the asymmetrical pattern of the conductive circuit along the long axis direction (horizontal direction in the figure) on the substrate 100 grain surface 110 of the substrate. According to a preferred embodiment of the discrete circuit component of the present invention, the conductive circuit is within the component footprint range 122 of a component of another component shown in FIG. 2 along the short axis direction (vertical direction in the figure). The conductive lines 1 1 2A and 1 1 2B are substantially symmetrical in shape. However, as can be understood by those skilled in the art, non-symmetric conductive line patterns are also feasible. The conductive lines 1 12A and 1 12B are essentially two conductive patterns that are physically independent of each other. Each of the conductive lines 112A and 112B has a conductive line segment extending toward the center of the element. One of the two conductive lines faces the center of the component, that is, the fixed positioning of the component die extends, and the other conductive line is not
第11頁 1244744 五、發明說明(、6) 依相當幅度向中心延伸,以便兩者實體互不接觸。 在圖2所顯示之實施例之中,右側之導電線路1 1 2 A係 為向元件中心延伸較多的導電線路段落。不過,如同習於 本技藝者所可以理解的,若安排左側的導電線路延伸到達 元件中心,亦同樣是可行的作法。 圖2中之導電線路矩陣利用諸如姓刻的處理形成之 後,各導電線路的金屬表面可利用諸如電鍍等多種處理, 形成抗氧化表面層,以利於後續製程步驟中與元件晶粒之 間的共金(e u t e c t i c )與/或軟銲處理,並亦更適於利用諸 如環氧樹酯等材料進行元件晶粒的密封模造處理。在本發 明之較佳實施例之中,適於進行電鍍處理的金屬包含有鎳 及金等。 圖3為圖1及2基板之橫裁面圖,其係沿著圖1及2中之 導電線路113A,113B,114A及114B等之長軸方向所裁取之 橫截面圖。注意到圖3之橫戴面圖顯示,基板1 0 0及其晶粒 面1 1 0上之所有導電線路全皆是由單一片諸如銅質的導電 片材製作出來的。 接著便可以將離散式電路元件之晶粒定置於圖3所示 之定位上。例如,圖中之一元件單位1 2 4的範圍内,一元 件晶粒即會被定置於位置1 5 4上。圖4之橫載面圖即顯示一 離散式電路元件之晶粒4 1 4被定置於基板1 0 0之晶粒面1 1 0 上。元件晶粒414之電極’並且與基板100上之晶粒面110 上導電線路1 1 4 A電性地連結。 晶粒4 1 4與導電線路1 1 4A之電性接合可以利用,例Page 11 1244744 V. Description of the invention (, 6) Extends to the center by a considerable extent so that the two entities do not contact each other. In the embodiment shown in FIG. 2, the conductive line 1 1 2 A on the right is a conductive line segment that extends more toward the center of the element. However, as will be understood by those skilled in the art, it is also possible to arrange the conductive line on the left to reach the center of the component. After the conductive circuit matrix in FIG. 2 is formed by using a process such as last name engraving, the metal surface of each conductive circuit can be processed by various processes such as electroplating to form an oxidation-resistant surface layer, which is beneficial to co-existence with component grains in subsequent process steps. Gold (eutectic) and / or soldering treatment, and is also more suitable for the use of materials such as epoxy resin for sealing mold processing of component grains. In a preferred embodiment of the present invention, the metal suitable for the plating treatment includes nickel, gold and the like. Fig. 3 is a cross-sectional view of the substrates of Figs. 1 and 2, which are cross-sectional views taken along the major axis directions of the conductive lines 113A, 113B, 114A, and 114B in Figs. Note that the cross-sectional view of FIG. 3 shows that all the conductive lines on the substrate 100 and its grain plane 110 are made of a single conductive sheet such as copper. Then, the die of the discrete circuit element can be set in the position shown in FIG. 3. For example, within the range of one of the component units 1 2 4 in the figure, a component die will be positioned at position 1 5 4. The cross-sectional view of FIG. 4 shows that the crystal grains 4 1 4 of a discrete circuit element are set on the crystal grain surface 1 1 0 of the substrate 100. The electrode 'of the element die 414 is electrically connected to the conductive line 1 1 4 A on the die face 110 on the substrate 100. The electrical connection between the die 4 1 4 and the conductive line 1 1 4A can be used, for example
第12頁 1244744 五、發明說明ο) '' 如,以電氣爐加熱,使預先形成於晶粒4 1 4下表面與/或導 電線路1 5 4位置上之銲錫熔化,冷卻後將晶粒4 1 4銲著於導 電線路1 1 4 A之定位1 5 4上。若為了大功率的需求,晶粒4 1 4 下表面與導線路1 1 4 A之間的永久性電性結合可以,例如, 形成共金(e u t e c t i c ),以便承受大電流通過。Page 12 1244744 V. Description of the invention ο) '' For example, heating in an electric furnace to melt the solder previously formed on the lower surface of the crystal grains 4 1 4 and / or the positions of the conductive lines 1 5 4 and cool the crystal grains 4 1 4 is welded on the position 1 5 4 of the conductive line 1 1 4 A. For high power requirements, the permanent electrical bonding between the lower surface of the grain 4 1 4 and the conductive line 1 1 4 A may, for example, form a co-gold (e u t e c t i c) in order to withstand the passage of a large current.
當電路元件晶粒4 1 4下表面之電極與晶粒面上之導電 線路1 1 4 A達成穩固電性接合之舉,晶粒4 1 4另一端,亦 、 即,頂端上之另一電極,便可以如圖4所示利用諸如跳接/ 線,或較佳者為,例如,具有良好導電性之引線架4 3 4之 類的金屬導體而與基板1 0 0晶粒面1 1 0上的另一導電線路 1 1 4 B電性地接合。圖4 A之立體圖即顯示圖4中離散式電路 元件晶粒利用引線架以焊接方式形成電極連結之構造。相 較於導接線,引線架係為具有設定厚度及寬度的,基本上 為厚片型的導電金屬。由於其導電性良好,且熱傳導性亦 由於其相對較大體積之故,因而極適合於必須處理較太功 率的電路元件之用途。 當完成圖4及4 A所顯示之架構之後,各元件晶粒之電 極便已電性地連結到其各自基板範圍(圖1及2中以虛線所 標示出來之元件範圍)内的對應軟銲接觸端子上。此時,When the electrode on the lower surface of the circuit element die 4 1 4 and the conductive line 1 1 4 A on the die face reach a stable electrical connection, the other end of the die 4 1 4, that is, another electrode on the top As shown in FIG. 4, a metal conductor such as a jumper / wire, or preferably, for example, a lead frame 4 3 4 with good conductivity can be used to communicate with the substrate 1 0 0 grain surface 1 1 0 Another conductive line 1 1 4 B on the electrical connection. FIG. 4A is a perspective view showing a structure in which the discrete circuit element dies in FIG. 4 are formed by electrode bonding using a lead frame by soldering. In contrast to lead wires, lead frames are basically thick-plate conductive metals with a set thickness and width. Because it has good electrical conductivity and thermal conductivity due to its relatively large volume, it is very suitable for applications that must handle circuit components with relatively high power. After completing the architecture shown in Figures 4 and 4 A, the electrodes of each component die have been electrically connected to the corresponding solder joints within their respective substrate ranges (component ranges indicated by dashed lines in Figures 1 and 2). On the terminals. at this time,
各元件之電性結構已建構完成,但仍排列於矩陣中之各個 離散式電路元件,便可以進行水氣密封(hermetic seal) 的處理。圖5之橫載面圖即顯示圖4之離散式電路元件晶粒 被水氣密性材料5 0 0包覆的情形。此種密封包覆可以,例 如,利用模鑄的方式進行。只需利用模具在基板1 〇 〇的晶The electrical structure of each component has been constructed, but the discrete circuit components still arranged in the matrix can be processed for hermetic seal. The cross-sectional view of FIG. 5 shows a case where the crystal grains of the discrete circuit element of FIG. 4 are coated with a water-tight material 50 0. This sealing coating can be performed, for example, by a die casting method. Just use the mold on the substrate
第13頁 1244744 五、發明說明(8) 粒面1 1 0上方形成一個高度適恰之空間,便可以利用,例 如,將熔融(軟化)之水氣密封材質注入該空間内,而可以 方便而容易地製成水氣密封裝5 0 0 ,以將晶粒4 1 3 ,4 1 4等 保護於其中。 之後,如圖6之橫截面圖所顯示的,此時可以進行基 板1 0 0銲接面的處理。基本上,基板1 0 0之銲接面可利用微 影技術進行受控之蝕刻處理,將基板銲接面上指定位置處 的導電材質姓入設定的深度。此受控之姓刻處理可以將母 一元件單元之個別電極對應導電線路電性地分離開,即如 圖6之橫截面圖所…顯示的構造。以圖6中之元件晶粒4 1 4所 屬之電路元件為例,已經水氣密封裝層5 0 0所保護住的晶 粒414,其底面電極之導電線路11 4A與其頂面電極之導電 線路1 1 4 B,兩者之間經此蝕刻處理即如圖6之橫截面圖所 顯示的,便可以電性地隔絕開來。 同樣的,圖6中之受控蝕刻處理,亦可以將相鄰兩元 件單元之間的相鄰導電線路電性地隔絕分離。例如,圖中 晶粒4 1 4及4 1 3兩者各自之底面電極導電線路1 1 4 A及頂面電 極導電線路1 1 3 B亦已被電性地隔絕分開。注意到如圖6所 顯示的,此時在基板1 0 0的銲接面的各相鄰導電線路之間 所露出者是為封裝材料5 0 0。 圖7為圖6基板之銲接面之立體圖,其中顯示了基板 1 0 0在此製程階段中其銲接面的構造細節。注意到基板1 〇 〇 底面2 1 0此時所露出,凸浮出於基板大致平坦的平面之上 的,係為前述各晶粒導電線路所形成的元件電極。例如,Page 13 1244744 V. Description of the invention (8) A space with an appropriate height is formed above the grain surface 1 1 0, and it can be used, for example, by injecting molten (softened) water and gas sealing material into the space, which can be convenient and convenient. It can be easily made into a water-air-tight package 5 00 to protect the grains 4 1 3, 4 1 4 and the like. After that, as shown in the cross-sectional view of FIG. 6, at this time, the processing of the welding surface of the substrate 100 can be performed. Basically, the soldering surface of the substrate 100 can be etched in a controlled manner using lithographic technology, and the conductive material at a specified position on the soldering surface of the substrate is set to a set depth. This controlled engraving process can electrically separate the individual electrodes of the mother-element unit from the conductive lines, that is, as shown in the cross-sectional view of FIG. 6. Taking the circuit element to which the element die 4 1 4 in FIG. 6 belongs as an example, the die 414 which has been protected by the water-vapor sealing layer 5 0 0, the conductive line 11 4A of the bottom electrode and the conductive line of the top electrode thereof 1 1 4 B. After the etching process between the two, as shown in the cross-sectional view of FIG. 6, they can be electrically isolated. Similarly, the controlled etching process in FIG. 6 can also electrically isolate and separate adjacent conductive lines between two adjacent element units. For example, the bottom electrode conductive lines 1 1 4 A and the top electrode conductive lines 1 1 3 B of the grains 4 1 4 and 4 1 3 in the figure have also been electrically isolated. Note that as shown in FIG. 6, at this time, the exposed material between adjacent conductive lines on the soldering surface of the substrate 100 is the packaging material 500. FIG. 7 is a perspective view of the welding surface of the substrate of FIG. 6, which shows the structural details of the welding surface of the substrate 100 in this process stage. Note that the bottom surface 2 1 0 of the substrate 100 is exposed at this time, and the convex electrodes lie above the substantially flat surface of the substrate, which are the element electrodes formed by the aforementioned conductive circuits of each grain. E.g,
第14頁 1244744 五、發明說明(g) 一 " '广 〜 51 +虛線範圍123内即包含了元件電極123 A及123B。 2 接著,如圖8之橫截面圖所顯示的,基板1 〇 〇銲接面 1 0表面所露出的的各電極之間,此時即可以填入絕緣性 的材質。此填補處理可以增補元件的整體機械強度。例 如’元件晶粒414於基板銲接面的兩電極124A及124B之 T ’可以填入絕緣物質8 I 4。填補物質可使用任何適當的 絕緣材料,但較佳者應為與封裝5 0 0所使用者相同的物 質。 之後,圖8A之橫截面圖顯示圖8,之基板進行進一步蝕 刻處理後之構造。此進一步蝕刻處^之目的係要將相鄰兩 元件間此時仍屬電性相連之導電線路予以電性分離,並形 成將來元件電接觸端子之側邊接面。如圖所示,在適當之 微影圖形之下,利用受控之金屬蝕刻處理,將部份的導電 金屬移除之後,便可以在晶粒4 13及414所屬兩元件之間形· 成側邊接面蝕刻空間8 4 4,並在兩元件之對向外側分別形 成側邊接面蝕刻空間8 4 3及8 4 5。注意到此蝕刻處理,其蝕_ 刻今行之深度係可將兩每兩相鄰元件之間此時仍電性連通 的導電線路金屬層,完全地分割開來。 由各側邊接面蝕刻空間8 4 3,8 4 4及8 4 5所裸露出的金 屬表面,即為各獨立元件個體的電接觸端子之側邊接面。 例如,側邊接面蝕刻空間8 4 4的形成即形成了元件晶粒4 1 4 所屬元件右側電接觸端子(即導電線路丨2 4A )之側邊接面 1 2 4 C,以及元件晶粒4 1 3所屬元件左側電接觸端子(即導電 線路1 2 3 B )之側邊接面丨2 3 D。各電接觸端子之金屬表面,Page 14 1244744 V. Description of the Invention (g)-"Wide ~ 51 + The dotted line range 123 contains the element electrodes 123 A and 123B. 2 Next, as shown in the cross-sectional view of FIG. 8, between the electrodes exposed on the surface of the substrate 100 soldering surface 10, an insulating material can be filled at this time. This filling process can supplement the overall mechanical strength of the component. For example, T 'of the two electrodes 124A and 124B of the element die 414 on the soldering surface of the substrate may be filled with an insulating substance 8 I 4. The filling material may be any suitable insulating material, but preferably it is the same material as the user of the package 500. Thereafter, the cross-sectional view of FIG. 8A shows the structure of the substrate of FIG. 8 after further etching processing. The purpose of this further etching is to electrically separate the conductive lines that are still electrically connected between adjacent two components at this time, and form the side contact surfaces of the electrical contact terminals of the components in the future. As shown in the figure, under the appropriate lithographic pattern, a controlled metal etching process is used to remove a part of the conductive metal, and then a side can be formed between the two components to which the grains 4 13 and 414 belong. The edge contact surface etching space 8 4 4, and the edge contact surface etching spaces 8 4 3 and 8 4 5 are respectively formed on the opposite sides of the two components. It is noted that the depth of the etch-etch line today can completely separate the conductive circuit metal layers that are still in electrical communication between two adjacent elements at this time. The exposed metal surfaces of the etching spaces 8 4 3, 8 4 4 and 8 4 5 at each side contact surface are the side contact surfaces of the electrical contact terminals of each individual component. For example, the formation of the side contact surface etching space 8 4 4 forms the element die 4 1 4 and the side contact surface 1 2 4 C of the electrical contact terminal (ie, the conductive line 丨 2 4A) on the right side of the component and the device die. 4 1 3 The side contact surface of the left electrical contact terminal of the component (ie, the conductive line 1 2 3 B) 2 3 D. The metal surface of each electrical contact terminal,
1244744 五、發明說明no) 包括各導電線路之底面以及各側邊接面,此時即可以進 行,例如,化學電鍍的處理。若在此些金屬表面上鍍上諸 如鎳與/或金等的金屬層,便可以形成分割後之獨立元件 個體的電接觸端子之軟銲表面。 圖8B為圖8A基板之銲接面之立體圖,其中大致顯示各 元件之兩電接觸端子之露出情形。以虛線1 2 2所標示之元 件為例,其左側電接觸端子,即導電線路1 2 2 A,便露出其 底面,以及其對應之側邊接面1 2 2 C。1244744 V. Description of the invention no) Including the bottom surface of each conductive line and the contact surfaces of each side. At this time, it can be performed, for example, chemical plating. If these metal surfaces are plated with a metal layer such as nickel and / or gold, a soldered surface of the individual electrical contact terminals of the separated individual components can be formed. Fig. 8B is a perspective view of the soldering surface of the substrate of Fig. 8A, which shows the exposure of two electrical contact terminals of each component. Taking the components marked by dashed line 1 2 2 as an example, the left electrical contact terminal, that is, the conductive line 1 2 2 A, exposes its bottom surface and its corresponding side connection surface 1 2 2 C.
圖8 A及8 B所顯示之基板構造,此時即可加以切割成 分離之離散式電路元件。注意到兩相鄰元件之間的切割, 實質上可以對準兩元件之間的間隔中心線而進行切割。如 圖9所示,切割圖中元件9 1 4即須沿切割道9 4 4與9 4 5進行切 割。此外,如同可以理解的,沿著圖中所未標示,實質上 垂直於切割道9 4 4與9 4 5的方向,亦須進行二道切割,才能 完整地將元件9 1 4分離出來。 圖10為本發明平片型離散式電路元件封裝之橫截面 圖,其中顯示元件封裝914之兩電接觸端子,即電極124A 及1 2 4 B各皆具有凹陷之側面。例如,電極端子1 2 4 A外側側 壁有凹陷1 0 2 6 ,其内側側壁則有凹陷1 0 2 4及1 0 2 2 ,而電極The substrate structure shown in Figures 8 A and 8 B can now be cut into discrete discrete circuit elements. Note that the cutting between two adjacent elements can be performed by substantially aligning the centerline of the space between the two elements. As shown in Fig. 9, the components 9 1 4 in the cutting diagram must be cut along the cutting lines 9 4 4 and 9 4 5. In addition, as can be understood, along the directions not shown in the figure, which are substantially perpendicular to the cutting lines 9 4 4 and 9 4 5, two cuts must be performed to completely separate the component 9 1 4. FIG. 10 is a cross-sectional view of a flat-chip discrete circuit component package according to the present invention, in which two electrical contact terminals of the component package 914, that is, electrodes 124A and 1 2 4 B each have a recessed side. For example, the outer side wall of the electrode terminal 1 2 4 A has a depression 1 0 2 6, and the inner side wall thereof has a depression 1 0 2 4 and 1 0 2 2, and the electrode
端子1 2 4 B外側側壁有凹陷1 0 2 7,其内側側壁則有凹陷1,0 2 5 及1 0 2 3。此些電極垂直側壁上的凹陷部份,可以利用控制 前述導電段進行蝕刻時之蝕刻時間長度而達成。此些凹陷 區的存在有助於封裝材質穩固地抓固兩導電接觸端子。 圖1 1顯示依據本發明一較佳實施例,應用本發明電路The terminal 1 2 4 B has a recess 1 0 2 7 on its outer side wall, and a recess of 1, 2 5 and 10 2 3 on its inner side wall. The recessed portions on the vertical sidewalls of these electrodes can be achieved by controlling the etching time length when the aforementioned conductive segments are etched. The existence of these recessed areas helps the packaging material to firmly hold the two conductive contact terminals. FIG. 11 shows a circuit according to a preferred embodiment of the present invention.
第16頁 1244744 五、發明說明(in ' 元件之平片型封裝製作方法而製造完成並經切割分離之一 電路元件,其單體構造之背面之立體圖。圖1 2則顯示圖1 1 元件單體構造之銲接面之立體圖。 圖1 3及1 4分別顯示本發明另一電路元件單體構造之背 面及銲接面之立體圖。此電路元件可為兩個類如圖1 1及1 2 中元件單體之連結,其具有四個電接觸端子。注意到圖中 元件1300之電接觸端子1311 ,1313等,與圖11中元件1100 之端子1 1 1 1相類似的,係具有露出於元件本體表面以外之 大面積導電接面。 圖1 5及1 6則分別顯示本發明又另一電路元件單體構造 之背面及銲接面之立體圖,其可為四個類如圖1 1中的元件 單體之連結,具有雙排各四個電接觸端子。圖中元件1 5 0 0 之電接觸端子1511 ,1513等,與圖11中元件1100之端子 1 1 1 1相類似。圖1 3至1 6所顯示的多電接觸端子電路元件可· 適用於,例如,排二極體等的整合式主動或被動電路元 件。 另一方面,圖17顯示本發明另一電路元件單體構造之 銲接面之立體圖。此電路元件1700之三個電接觸端子 1 7 1 1 ,1 7 1 3及1 7 1 2係依不對稱形態安排,可適用於諸如需 要使用三個接腳的電晶體等離散式電路元件的需求。 圖1 8更顯示本發明另一電路元件單體構造之銲接面之 立體圖,其具有四面排列之多個電接觸端子。注意到圖中 之電路元件1 8 0 0在其兩較寬側面各具有四個電接觸端子 (1811,1813,1815 及 1817 與 1812,1814,1816 及 1818),Page 16 1244744 V. Description of the invention (in 'component flat chip package manufacturing method and cut and separated a circuit component, a single structure of the rear perspective view. Figure 1 2 shows Figure 1 1 component single A perspective view of the soldering surface of the body structure. Figures 1 and 14 show perspective views of the back surface and soldering surface of another circuit element single structure of the present invention. This circuit component can be two types of components as shown in Figures 1 1 and 12 The connection of a single body has four electrical contact terminals. Note that the electrical contact terminals 1311, 1313, etc. of the component 1300 in the figure are similar to the terminals 1 1 1 1 of the component 1100 in FIG. Large-area conductive junctions other than the surface. Figures 15 and 16 show perspective views of the back surface and soldering surface of another circuit element single structure of the present invention, respectively, which can be four types of component elements shown in Figure 11 The body connection has four rows of four electrical contact terminals each. The electrical contact terminals 1511, 1513, etc. of the element 1 500 in the figure are similar to the terminals 1 1 1 1 of the element 1100 in Fig. 11. Figs. 1 to 3 The multiple electrical contact terminal circuit elements shown in 6 Suitable for, for example, integrated active or passive circuit elements such as diodes. On the other hand, FIG. 17 shows a perspective view of a soldering surface of a single structure of another circuit element of the present invention. Three electrical contacts of this circuit element 1700 The terminals 1 7 1 1, 1 7 1 3, and 1 7 1 2 are arranged in an asymmetrical form, and can be applied to the needs of discrete circuit elements such as a transistor that requires three pins. Fig. 1 8 further shows the present invention. A perspective view of the soldering surface of another circuit element with a single structure, which has a plurality of electrical contact terminals arranged on four sides. Note that the circuit element 1 800 in the figure has four electrical contact terminals (1811) on each of its two wider sides. , 1813, 1815 and 1817 and 1812, 1814, 1816 and 1818),
1244744 五、發明說明(12) 而其較窄側面則各只有一個電接觸端子1 8 2 1與1 8 2 2。電路 元件1 8 0 0之此種電接觸端子安排同樣可適用於,例如,排 二極體或排電晶體等的整合式主動或被動電路元件。在一 種典型的元件接腳分派方式之中,寬側之電接觸端子可以 為元件1 8 0 0所内含多個個別離散式電路元件之信號接腳, 例如二極體之正負極接腳,而其窄侧的電接觸端子則可供 諸如接地,或諸如共陽或共陰排二極體的共同電源或共同 接地端。 如同習於本技藝者所可以理解的,雖然.圖中之電路元 件1 8 0 0,其實質上位於左右兩側的元件側面只具有單一個 電接觸端子,但其亦可以安排多於一個的電接觸端子,以 適合於不同的元件之需要。 雖然前面的說明文字已是本發明特定實施例的一個完 整的說明,但其各種的修改變化,變動的構造及等效者的 應用仍是可能的。例如,雖然前述實施例之詳細說明中只 廣泛地以離散式電路元件來說明本發明,但如同習於本技 藝之士所可以理解者,SMT型式之下,E I A標準晶片的各種 尺寸的離散式二極體,諸如Zener,Schott ky等,或者離 散式電容,無論是有否極性,或者離散式電阻,甚至是主 動或積體電路本質,不論是需使用二電性接頭或多於二電 性接頭的電路元件,皆是可以適用於本發明所揭示之製作 方法。此外,本發明不但適用於常見的1310,1206,0805 以及SOD 3 2 3, SOD 5 2 3 等SMT型E I A標準晶片尺寸,其更係 特別適於更為小型的SMT型離散式電路元件。再例如,該1244744 V. Description of the invention (12) and its narrow sides each have only one electrical contact terminal 1 8 2 1 and 1 8 2 2. Such an electrical contact terminal arrangement of the circuit element 1 800 is equally applicable to, for example, integrated active or passive circuit elements such as a diode or a transistor. In a typical component pin assignment method, the wide-side electrical contact terminal may be a signal pin of a plurality of individual discrete circuit components contained in the component 180, such as the positive and negative pins of a diode. The narrow-side electrical contact terminals can be used for common ground or a common power source or common ground such as common anode or common cathode diode. As can be understood by those skilled in the art, although the circuit element 1 800 in the figure has substantially a single electrical contact terminal on the side of the element on the left and right sides, it can also arrange more than one Electrical contact terminals to suit the needs of different components. Although the foregoing explanatory text is a complete description of a specific embodiment of the present invention, its various modifications, variations, and equivalent applications are still possible. For example, although the detailed description of the foregoing embodiments only uses discrete circuit elements to describe the present invention, as can be understood by those skilled in the art, under the SMT type, various sizes of EIA standard chips are discrete. Diodes, such as Zener, Schott ky, etc., or discrete capacitors, whether polarized or not, or discrete resistors, or even the nature of active or integrated circuits, regardless of whether a dual electrical connector or more than a dual electrical connector is required The circuit components of the connector are all applicable to the manufacturing method disclosed in the present invention. In addition, the present invention is not only applicable to the common 1310, 1206, 0805, and SOD 3 2 3, SOD 5 2 3 and other SMT E I A standard chip sizes, and it is particularly suitable for smaller SMT discrete circuit elements. For another example, this
1244744 五、發明說明(13) 板之銲接面上之該些導電線路上更可覆有一鎳層與或一金 層。此外,雖然本發明說明文字段落中強調了高功率之應 應,但如同習於本技藝者所可以理解的,本發明之平片型 封裝同樣亦可適用於非高功率,諸如信號元件之用途。因 此,前面的描述說明即不應被拿來限$本發明,而其範疇 應以後附之申請專利範圍乙節文字内容來加以界定。1244744 V. Description of the invention (13) The conductive lines on the welding surface of the board may be further covered with a nickel layer or a gold layer. In addition, although the application of high power is emphasized in the explanatory text of the present invention, as can be understood by those skilled in the art, the flat chip package of the present invention can also be applied to non-high power applications such as signal components. . Therefore, the foregoing description should not be used to limit the present invention, and its scope should be defined by the text of section B of the scope of patent application attached later.
第19頁 1244744 圖式簡单說明 圖1顯示用於製作本發明電路元件之平片型封裝較佳 實施例電路元件之基板晶粒面之立體圖。 圖2為圖1之局部放大圖,顯示基板晶粒面之初始導電 線路之構形細節。 圖3為圖1基板之橫戴面圖。 圖4之橫戴面圖顯示一離散式電路元件晶粒被定置於 基板之晶粒面上’並形成元件電極之電性連結。 圖4 A之立體圖顯示圖4中離散式電路元件晶粒利用引 線架以銲接方式形成電極連結之構造。 圖5之橫截面圖顯示圖4之離散式電路元件被水氣密性 材料包覆。 圖6之橫截面圖顯示圖5基板之銲接面進行蝕刻處理後 之構造。 圖7為圖6基板之銲接面之立體圖。 圖8之橫截面圖顯示圖6基板之銲接面進行絕緣材料填 補處理後之構造。 圖8A之橫截面圖顯示圖8之基板進行進一步#刻處理 後之構造。 圖8B為圖8A基板之銲接面之立體圖。 圖9之橫載面圖顯示圖8之基板構造被切割成分離之離 散式電路元件。 圖10為本發明平片型離散式電路元件封裝之橫載面 圖,其中顯示兩電接觸端子之凹陷側面。 圖1 1顯示依據本發明一較佳實施例製造完成並經切割Page 19 1244744 Brief Description of Drawings Figure 1 shows a perspective view of a crystal grain surface of a substrate of a circuit element of a preferred embodiment of a flat-chip package for making a circuit element of the present invention. Fig. 2 is a partially enlarged view of Fig. 1 showing the details of the configuration of the initial conductive circuit on the substrate grain plane. FIG. 3 is a cross-sectional view of the substrate of FIG. 1. The cross-sectional view of Fig. 4 shows that a discrete circuit element die is positioned on the die face of the substrate 'and forms an electrical connection of the element electrodes. FIG. 4A is a perspective view showing a structure in which the discrete circuit element die in FIG. 4 is formed by electrode bonding using a lead frame by soldering. The cross-sectional view of FIG. 5 shows that the discrete circuit element of FIG. 4 is covered with a water-tight material. The cross-sectional view of FIG. 6 shows the structure after the soldering surface of the substrate of FIG. 5 is etched. FIG. 7 is a perspective view of a soldering surface of the substrate of FIG. 6. The cross-sectional view of FIG. 8 shows the structure after the soldering surface of the substrate of FIG. 6 is filled with an insulating material. The cross-sectional view of FIG. 8A shows the structure of the substrate of FIG. 8 after further #etching processing. FIG. 8B is a perspective view of a soldering surface of the substrate of FIG. 8A. The cross-sectional view of FIG. 9 shows the substrate structure of FIG. 8 cut into discrete discrete circuit elements. Fig. 10 is a cross-sectional view of a flat-chip discrete circuit component package according to the present invention, in which recessed sides of two electrical contact terminals are shown. FIG. 11 shows the manufacturing and cutting according to a preferred embodiment of the present invention.
1244744 圖式簡單說明 分離之一電路元件,其單體構造之背面之立體圖。 圖12顯示圖11元件單體構造之銲接面之立體圖。 圖1 3及1 4分別顯示本發明另一電路元件單體構造之背 面及銲接面之立體圖,其具有四個電接觸端子。 圖1 5及1 6分別顯示本發明又另一電路元件單體構造之 背面及銲接面之立體圖,其具有雙排各四個電接觸端子。 圖1 7顯示本發明另一電路元件單體構造之銲接面之立 體圖。 圖1 8顯示本發明另一電路元件單體構造之銲接面之立 體圖,其具有四面排列之多個電接觸端子。1244744 Schematic illustration A perspective view of the back of a single component with a single structure. FIG. 12 shows a perspective view of a soldering surface of the element structure of FIG. 11. Figures 13 and 14 show perspective views of the back surface and the soldering surface of another circuit element single structure of the present invention, respectively, which have four electrical contact terminals. Figures 15 and 16 show perspective views of the back surface and the soldering surface of another circuit element single structure of the present invention, respectively, which have four rows of four electrical contact terminals each. Fig. 17 shows a perspective view of a soldering surface of a single circuit element structure of the present invention. FIG. 18 shows a perspective view of a soldering surface of another circuit element single structure of the present invention, which has a plurality of electrical contact terminals arranged on four sides.
第21頁Page 21
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TW093129401A TWI244744B (en) | 2004-09-24 | 2004-09-24 | Flat package for circuit components having soldered metallic contact terminal blocks with lateral surface and process of fabricating the same |
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TW093129401A TWI244744B (en) | 2004-09-24 | 2004-09-24 | Flat package for circuit components having soldered metallic contact terminal blocks with lateral surface and process of fabricating the same |
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