TWI240098B - Liquid crystal display device - Google Patents

Abstract

A liquid crystal display device according to the present invention includes a first substrate, a second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes: a plurality of gate lines; a plurality of source lines arranged to cross with the plurality of gate lines; a plurality of switching elements disposed in the vicinity of crossings of the plurality of gate lines and the plurality of source lines; and a plurality of pixel electrodes connected to the plurality of switching elements. The second substrate includes a counter electrode. A plurality of pixel regions are defined by the plurality of pixel electrodes, the counter electrode, and the liquid crystal layer interposed between the plurality of pixel electrodes and the counter electrode, and each of the plurality of pixel regions includes a reflection region and a transmission region.

Description

1240098

Description of the invention (Background of the invention 1. The scope of the invention: '' The present invention relates to a method for liquid crystal display. The present invention is particularly related to the liquid crystal display device area and reflective display area made of a transmissive display device in each pixel Method, and used to manufacture the liquid crystal display 2. Description of related technologies: The liquid crystal display device has the characteristics of low energy consumption because of its ancient use, spoons & ,,, ..., so it can be widely used, including office and automation (〇 ^ ^) Devices such as word processors and personal electronic monthly return, portable data devices such as., A | ^ „One: such as a yaye-type electronic schedule meter, and a VCR with a liquid crystal detection and a camera. Different from a tritium display and an electro-optic (EL) display, the liquid crystal display device includes a liquid crystal display panel that does not emit light by itself. Because of the so-called transmissive soil, "" is used as a liquid crystal display device, #including located behind or One side is called the rear shame light illumination $, so the light from the backlight penetrates the LCD panel < the amount of light is controlled by the LCD panel to get the image display. In this type of transmissive liquid crystal display device, the backlight consumes 50% or more of the total energy consumed by the liquid crystal display device. Therefore, providing backlight will increase the energy consumption. In order to overcome the aforementioned problems, it is often used outdoors or A reflection type liquid crystal display device is used in a portable f-type data device carried by a user. The reflection type liquid crystal display device has a reflector on one of the pair of substrates to replace the backlight, and reflects ambient light from the reflection from the surface. This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1240098 A7 __ B7 V. Description of the invention (2) This reflective liquid crystal display device is operated in a display mode using a polarizing plate, such as a wide range Twisted nematic (tn) mode and super-twisted nematic (STN) mode used in transmissive liquid crystal display devices. In recent years, the phase change guest-host mode, which obtains a brighter display without using a polarizer, has flourished. Use of ambient light reflection The disadvantage of the reflective liquid crystal display device is that when the surrounding environment is dark, the visibility of the display is extremely low. On the contrary, the transmissive liquid crystal The disadvantage of the display device is when the environment is bright. That is, the color reproducibility is low, and because the brightness of the display light is lower than that of the ambient light, the display cannot be fully recognized. In order to improve the display quality in the Ming party environment, the backlight The intensity needs to be increased. This situation increases the energy consumption of the back light and the formed liquid crystal display device. Moreover, when the liquid crystal display device needs to be viewed in a place directly exposed to sunlight or direct light, the display quality is necessarily due to ambient light. Decrease. For example, 'When the screen of a liquid crystal display device fixed in a car or a display screen of a personal computer used in a fixed position directly receives sunlight or light, it is difficult to view its own display. In order to overcome the aforementioned problems, for example, in Japanese Public Notice No. 7 _ 3 3 3 5 9 No. 8 discloses a liquid crystal display device having both a transmission mode display and a reflection mode display. This liquid crystal display device has a semi-transmissive reflective film that transmits part of the light and reflects part of the light. Fig. 52 shows a liquid crystal display device using a semi-transmissive reflective film. The liquid crystal display device includes polarizing plates 30a and 30b, a phase plate 31, a transparent substrate 32, a black mask 3, a counter electrode 3, a counter film 3, a liquid crystal layer 3, and a metal-insulator-metal (MI) element. 37. Pixel electrode 38, light source 39, and reflective film-6 _ I Paper size is applicable to Chinese Standard (CNS) A_Ii ^ _ (210 X 297 public director)-1240098 A7 B7 V. Description of the invention (3 40 ° The pixel electrode 38 is a semi-transmissive reflective film, which is an extremely thin layer composed of metal particles or a material layer with scattered microporous defects or depression defects on each pixel. A pixel electrode having such a structure The light from the light source 39 penetrates and reflects external light such as natural light and indoor irradiation light, and has both a transmissive display function and a reflective display function. The conventional liquid crystal display device shown in FIG. 2 has the following problems. First, When an extremely thin layer of deposited metal particles is used as a semi-transmissive reflective film for each pixel, because the absorption coefficient of the metal particles is extremely high, the internal absorption of incident light is extremely large, and some light is absorbed and cannot be used for display. Therefore, the utilization efficiency of light is reduced. When a film with scattered microporous defects or recessed defects is used as the pixel electrode 38 of each pixel, the structure of the film is too complicated to control and requires more accurate design conditions. Therefore, it is difficult to manufacture the film with uniform hook characteristics It is extremely difficult to control the display quality of the aforementioned liquid crystal display device due to its poor reproducibility of electrical or optical characteristics. For example, if an attempt is made to use a thin film transistor that has been widely used as a switching element of a liquid crystal display device in recent years ( TFTs) are used in the liquid crystal display device shown in FIG. 52, the electrodes used to form the storage capacitors in each pixel need to be formed by 4 electrodes / connecting materials other than the pixel electrode. In this case, the same as the conventional device, A pixel electrode made of a semi-transmissive reflective film is not suitable for forming a storage capacitor, and even if a transmissive reflective film is formed as a pixel electrode on a part of connection points and elements through an insulating layer, the pixel electrode including a transmission component -7- ¥ Fresh (⑽) M fine dew for paper scale it 297 male i _--- 1240098

It is still difficult to &amp; add numerical aperture. Moreover, if light is incident on the switching layer of a switching element such as a metal edge metal &amp; thin film transistor, the optical pumping% &quot; lb forming a semi-transmissive reflective film as a light shielding layer is not sufficient to protect the j switching element. To prevent light. To determine the light-shielding property, another layer of light-shielding film is placed on the pair of substrates. Brief Description of the Invention The liquid crystal display device of the present invention includes a first substrate, a second substrate, and a sandwich; 3 a liquid crystal layer between the first substrate and the second substrate; An applied voltage is defined by the electrodes of the liquid crystal layer, and each of the plurality of pixel regions includes a reflection region and a transmission region. In a specific embodiment of the present invention, the first substrate includes a reflective region (a reflective electrode region and a transmissive electrode region corresponding to a transmissive region. In another specific example of the present invention, the reflective electrode region is higher than The transmissive electrode region forms a step on the surface of the first substrate, and the thickness of the liquid crystal layer in the reflective region is smaller than the thickness of the liquid crystal layer in the transmissive region. In another specific example of the present invention, the area of the reflective region is in each pixel. The area occupies about 10 to about 90%. Or the liquid crystal display device of the present invention includes a first substrate, a second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes: a plurality of gate lines; a plurality of source lines, which are forks with the plurality of gate lines; a plurality of 70 switches, which are located between the plurality of gate lines and the plurality of source lines; Near the intersection of lines; and a plurality of pixel electrodes connected to the plurality of switching elements, the second substrate including a counter electrode, and the plurality of pixel regions are formed by -8-this paper size applies to Chinese national standards ( CNS) A4 specification (210X 297 male ¢) 124.098 A7 B7 V. Invention Ming (; far more than the pixel electrode, two π + strike, person ,, pair "...," "urgently, and sandwiched between the multiple pixel electrodes and the Qitun <hard crystal layer, and the Each of the plurality of pixel regions includes a reflection region and a transmission region. In a specific example of the present invention, the first sheet substrate includes a reflection region &lt; a reflection electrode region and a transmission electrode region corresponding to the transmission region. Taiwan, in another specific embodiment of the present invention, the reflective electrode region is higher than the transmission: polar region: a step is formed on the surface of the first substrate, and the thickness of the liquid crystal layer in the reflective region is smaller than that of the liquid crystal layer in the transmission region. In another embodiment of the present invention, the thickness of the liquid crystal layer in the reflective region is about one and a half of the thickness of the liquid crystal layer in the transmission region. In another embodiment of the present invention, each pixel electrode includes a reflective electrode. The reflective electrode in the child region and the transmissive electrode located in the transmissive electrode region. In another embodiment of the present invention, the reflective electrode and the transmission electrode are electrically connected to each other. In another embodiment of the present invention, each pixel electrode Transmission The reflective region includes a transmissive electrode and a reflective layer that is isolated from the transmissive electrode. In another specific embodiment of the present invention, the reflective electrode region is at least in contact with the plurality of gates, and there are many source lines. And one of the plurality of switching elements partially overlaps in another specific embodiment of the present invention, at least one of the reflective electrode region and the transmissive electrode region has a material that is the same as that of the plurality of gate lines or the plurality of source lines Material layer. -9- This paper size applies to Chinese National Standard (CNS) A4 specification (21〇χ 297 mm) 1240098 A7 --- ~ ---- B7 V. Description of the invention (6) Another invention is specific In the examples, the reflective area in each pixel area occupies about 10 to about 90%. J. In two specific examples of the present invention, the first substrate further includes a storage electrode = a spare electrode for insulation through The film forms a storage capacitor with the pixel electrode, wherein the reflective electrode region overlaps the storage capacitor electrode. In a specific example of the present invention, the liquid crystal display device further includes a microlens on a surface opposite to the liquid crystal layer on the first substrate. In another embodiment of the present invention, each reflective electrode region includes a metal layer and an intermediate layer insulating film located below the metal layer. In another embodiment of the present invention, the metal layer has a continuous wave type. In another embodiment of the present invention, the interlayer insulating layer has a concave shape and a convex shape. In another embodiment of the present invention, the interlayer insulating layer is formed of a photosensitive polymer resin film. In another embodiment of the present invention, the interlayer insulating layer covers at least a part of the switching element, the gate lines, or the source lines. In another embodiment of the present invention, the reflective electrode is formed at the same height as the plurality of gate electrodes, springs, or source lines. In another embodiment of the present invention, the reflective electrode is located at the same height as the plurality of gate lines, and the reflective electrode is electrically connected to the gate line for a pixel electrode adjacent to the reflective electrode. In another specific embodiment of the present invention, the same letter as applied to the pair of electrodes will be adopted. -10- The paper size is suitable for financial ® ® Home Standard (CNS) A4 specification (210X297 mm) 1240098 V. Description of the invention (7 A7 B7 she Add to the reflective electrode of the child. In another specific embodiment of the present invention, the reflection: the pole is formed at the same height as the gate lines &lt; Or, the transmission electrode is overlapped to form a storage capacitor. In another embodiment of the present invention, the reflective electrode is formed of a staggered or inscribed alloy. In another embodiment of the present invention, the transmission electrode is formed of steel tin oxide and the metal layer system It is sandwiched between the transmissive electrode and the reflective electrode. Another aspect of the present invention provides a method for manufacturing a liquid crystal display device. The liquid crystal device includes a first substrate, a second substrate, and a sandwich. A liquid crystal layer between the first substrate and the second substrate. The first substrate includes: a gate, a spring, and a source line that intersect with the plurality of gate lines; a plurality of Switching element, which is located between the multiple gate lines and Near the intersection of multiple source lines, and a pixel electrode, which is connected to the plurality of switching elements, the first substrate includes a counter electrode, and the plurality of pixel regions are formed by the plurality of pixel electrodes, the An electrode and a liquid crystal layer sandwiched between the plurality of pixel electrodes and the pair of electrodes are defined, and each of the plurality of pixel regions includes a reflection region and a transmission region. The method includes the steps of: The light-transmitting material forms a transmissive electrode region on the first substrate; forms a photosensitive polymer resin layer; and forms a reflective layer composed of a highly reflective material on the polymer resin layer. In a specific example, the photosensitive polymer resin layer has a plurality of depressed portions and raised portions. -11-1240098 A7

Or provide a method for manufacturing a liquid crystal display device. The liquid crystal display device includes a first substrate, a second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes: multiple question lines; multiple A source line that intersects the plurality of gate lines; a plurality of switching elements that are located near the intersection of the plurality of gate lines and the plurality of source lines; and a plurality of pixel electrodes that are connected to The plurality of switching elements, the second substrate includes a counter electrode, and the plurality of pixel regions are formed by the plurality of pixel electrodes, the counter electrode, and a substrate sandwiched between the plurality of pixel electrodes and the pair of electrodes. The boundary of the liquid crystal layer is sufficient, and each of the plurality of pixel regions includes a reflection region and a transmission region. The method includes the steps of: forming a transmissive electrode region on a first substrate using a material having high light transmittance; forming a protective film on the transmissive electrode region; and forming a highly reflective material layer on a portion of the protective film To form the reflective electrode region. In a specific example of the present invention, the transmissive electrode region is formed at the same height as the plurality of gate lines. Therefore, the present invention can obtain the following advantages (丨) providing a liquid crystal display device having both a transmission mode display and a reflection mode display, in which the utilization efficiency of ambient light and light from the backlight is improved compared with conventional liquid crystal display devices of the same type, and Obtain superior display quality, and (2) provide a method for manufacturing the liquid crystal display device. In the liquid crystal display device of the present invention, the display quality obtained in a bright environment is particularly greatly improved. Those skilled in the art can further understand these and other advantages of the present invention after reading the following detailed description with reference to the accompanying drawings. -12- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 1240098 A7

Brief Description of the Drawings Fig. 1 is a plan view of a liquid crystal display device according to an embodiment of the present invention;

Plan view; -b sectional view; another specific example of the active array substrate of Example 1

Floor plan; another specific example

5 is a plan view partially illustrating an insulating film and a metal film according to an embodiment of the present invention; FIG. 6 is a cross-sectional view taken along line cd of FIG. 5; FIG. 7 is a cross-sectional view of a liquid crystal display device according to Embodiment 3 of the present invention; 8A is a plan view of an active array substrate for a liquid crystal display device according to Embodiment 4 of the present invention, and FIG. 8B is a cross-sectional view taken along line 8-8 of FIG. 8; FIG. 9 is a view of a liquid crystal display device of the present invention Sectional view; FIG. 10 is a cross-sectional view of another specific example of a liquid crystal display device according to Embodiment 4 of the present invention, which has a microlens; FIG. A plan view of another specific example, and FIG. 丨 丨 B is a cross-sectional view taken along line B-B of FIG. Na; FIG. 12A is a plan view of an active array substrate of a liquid crystal display device according to Embodiment 5 of the present invention. And Figure 12 B is a cross-sectional view taken along line C-C of Figure 12 A; This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1240098 A7 ----- _____B7 _ 5 Description of the invention (10) ~~~ + s Solid 1 3 Α series is the present invention 6 is a plan view of an active array substrate of a liquid crystal display device, and FIG. 13B is a cross-sectional view taken along a line DD of FIG. UA. FIG. 14A is a plan view of an active array substrate of a liquid crystal display device according to Embodiment 7 of the present invention. 14B is a cross-sectional view taken along line EE of FIG. 14A; FIG. 15 is a cross-sectional view illustrating a reflection / transmission type liquid crystal display device according to Embodiment 8 of the present invention; and FIG. 16 is a view illustrating Embodiment 8 The relationship between the mirror hole ratio and the transmittance and reflectance of the reflection / transmission type liquid crystal display device; FIG. 17 is a graph showing the relationship between the mirror hole ratio and the light transmission efficiency of the reflection / transmission type liquid crystal display device of Example 8 Fig. 18 is a plan view of a reflection / transmission type liquid crystal display device according to Embodiment 8 of the present invention; Figs. 19A to 19F are views along the line! A cross-sectional view taken along line F-F of FIG. 8 illustrates the manufacturing method of the reflection / transmission type liquid crystal display device of Embodiment 8. FIGS. 20A to 2D are the explanations of the reflection / transmission type liquid crystal display device of Embodiment 8. A cross-sectional view of a step of forming a raised portion in a reflection region; FIG. 21 is a plan view of a photomask used in the step shown in FIG. 2B; FIG. 22 is a view illustrating reflection / transmission of Example 8 Sectional view of a method for reflecting characteristics of a pixel electrode having a high reflection efficiency in a liquid crystal display device; FIGS. 2 to 3 are conceptual diagrams illustrating the generation of interference light; and FIG. 2 to 4 are reflection / transmission type liquid crystal displays of Example 8 Device picture element-14- This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) l24〇98

A graph of the wavelength dependence of the electrodes; FIG. 25 is a scratched view of a transmissive / reflective liquid crystal display device according to Example 9 of the present invention; Fig. 27 is a chromaticity diagram of a conventional transmissive liquid crystal display device; Fig. 28 is a chromaticity diagram of a transmissive / reflective liquid crystal display device of Fig. 9; and Fig. 2 is an embodiment 9 of the present invention A cross-sectional view of another specific example of a transmissive / reflective liquid crystal display device; FIG. 30 is a plan view of an active array substrate of a liquid crystal display device according to Example 10 of the present invention; FIG. -A cross-sectional view taken along the line G; Fig. 3 2 is a plan view of an active array substrate of the liquid crystal display device according to Embodiment 11 of the present invention; 34 is a plan view of an active array substrate of a liquid crystal display device according to Example 12 of the present invention; FIG. 3 is a cross-sectional view taken along line I-1 of FIG. 34; FIG. 36 is an embodiment of the present invention 丨2 is a plan view of another specific example of an active array substrate of a liquid crystal display device; FIG. 3 7 is a plan view of an active array substrate of a liquid crystal display device according to Example 3 of the present invention; FIGS. 3A to 3D are cross-sectional views taken along line j_j in FIG. 37, which says -15-

l24〇〇98 A7

A cross-sectional view of the active array substrate-L line of a display device illustrates an active array substrate of a liquid crystal display device. The manufacturing method of the active array substrate of Example 13 is shown in FIG. 39. FIG. Figure 4 〇 A to 40 D are the droughts along the κ-K line in Figure 3 &gt;, ^ ○ ^ This W piece &lt; scraping surface diagram, which is the active example of Example 14 Array substrate manufacturing method; Figure 41 is a plan view of an active array substrate of a liquid crystal display device according to Example 15 of the present invention; Figures 42A to 42C are manufacturing methods of an active array substrate according to Example 15 of Figure 41; Figure 4 3 is a plan view of the plate of Example 16 of the present invention; / 44A to 44F are cross-sectional views taken along the line M-M of FIG. 43 and illustrate the method of manufacturing the active array substrate of Example 16; and FIG. 4 and 5 are Plan view of an active array substrate of a liquid crystal display device according to Embodiment 7 of the present invention; FIG. 46 is a cross-sectional view taken along the line N-N of FIG. 45; and FIG. 47 is a liquid crystal of Embodiment 17 of the present invention. A plan view of another specific example of an active array substrate of a display device; FIGS. 4 8 A to 4 8 C are illustrative embodiments 8 is a structure diagram, in which the present invention is applied to a simple matrix liquid crystal display device; FIGS. 49A to 49C are diagrams illustrating the structure of Embodiment 18; and FIGS. 5A to 50C are diagrams illustrating another embodiment 18 Structure diagram; Figures 5 A and 5 1 B are diagrams illustrating another structure of Embodiment 丨 8; and -16- this paper is applicable to the country group ~

1240098 A7 __________ B7 V. Description of the invention (13) — ^ ~ ---- Figure 5 2 is a sectional view of a conventional liquid crystal display device. Description of a preferred specific example (Embodiment 1) The liquid crystal display device of Embodiment 1 of the present invention includes an active substrate 1 and a transparent clay plate (such as a glass substrate), which has a counter electrode opposite to the pixel electrode. The liquid crystal layer is sandwiched between the active array substrate and the pair of substrates. Each pair of pixel electrodes and a pair of substrates for applying a voltage to the liquid crystal layer define a plurality of pixel regions. The pixel region includes a pair of electrodes and a liquid crystal layer interposed between the pair of electrodes. This definition can also be applied to a simple matrix type liquid crystal display device having a plurality of scan electrodes and a plurality of signal electrodes. Each pixel of the liquid crystal display device of the present invention has at least one transmission region and at least one reflection region. The transmission region and the reflection region include a liquid crystal layer and a pair of electrodes sandwiching the liquid crystal layer. The electrode region that defines the transmission region is called the transmission gas shuttle region, and the electrode region that borders the reflection region is called the transmission electrode region. FIG. 1 is a pixel portion of an active array substrate of the liquid crystal display device of Example 1. Floor plan. FIG. 2 is a sectional view taken along line a_b of FIG. 1. See Figs. 1 and 2 'The active array substrate includes pixel electrodes 1 arranged in a matrix. The gate line 2 for providing a scanning signal and the source line 3 for providing a display signal are arranged along the periphery of the pixel electrode 1 so as to intersect at right angles to each other. The edge portions of the gate line 2 and the source line 3 corresponding to the pixel electrode 1 are overlapped via the interlayer insulating film 19. The gate line 2 and the source line 3 include a metal film. -17- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1240098 A7 ____ B7 V. Description of the invention (14) Thin film transistors (TFTs) 4 are connected to gate line 2 and source line Formed near each intersection of 3. The gate electrode 12 of each thin film transistor 4 is connected to the corresponding interrogator line 2, and a signal is input to the interrogation electrode 12 by the gate line 2 to drive the thin film transistor *. The source of the thin film transistor 4;! 5 is connected to the corresponding source to receive the data signal from the source line 3. The drain electrode 16 of the thin film transistor 4 is connected to the connection electrode 5, which is electrically connected to the corresponding pixel electrode in sequence via the contact hole 6. The connection electrode 5 forms a storage capacitor with the storage capacitor electrode 8 via the gate insulating film 7. The storage capacitor 8 includes a metal film and is connected to a counter electrode 10 on a counter substrate 9 via an interconnector (not shown). The storage capacitor electrode 8 can be formed with the gate line 2 in the same step. Each pixel electrode 1 includes a reflective electrode region 22 including a metal film, and at least one transmissive electrode region 20 including an indium tin oxide film. The reflective electrode region 22 covers the gate line 2, the source line 3, the thin film transistor 4, and the storage capacitor electrode 8, and the transmissive electrode region 20 is surrounded by the reflective electrode region 22. An embodiment with the aforementioned structure is manufactured according to the following method. Active array substrate. First, a gate electrode 12, a gate wire 2, a storage capacitor electrode 8, and a gate insulation are formed on a transparent insulating substrate made of glass and other materials in sequence. The film 7, the semiconductor layer 1 3, the channel protection layer 丨 4, the source electrode 15 and the drain electrode 16. Thereafter, a transparent conductive film 7 and a metal film i 8 are sequentially deposited by sputtering, and a wiring pattern is formed to form the source line 3 and the connection electrode 5. Therefore, the source line 3 has a transparent conductive film made of indium tin oxide. 18- This paper size applies Chinese National Standard (CNS) A4 specifications (210X 297 mm) 1240098 A7 B7 V. Description of the invention (15 1 7 And the double-layer structure of the metal film 18. Using this structure, even if a defect such as a wire break occurs in the metal film 18, the electrical connection can be maintained through the transparent conductive film 17 and the wire break in the source line 3 can be reduced. After that, a photosensitive acrylic resin is applied to the formed substrate by a spin coating method to form an interlayer insulating film 19 having a thickness of 3 micrometers. The acrylic resin is then exposed according to the required wiring pattern and an alkali is used. Solution development. Only the exposed part of the film was etched by the alkaline solution to form contact holes penetrating the interlayer insulating film 19. Using this alkaline solution development method, contact holes 6 with perfect cone shape were obtained. According to the following factors, The use of a photosensitive propionic acid resin as the interlayer insulating film has 19 advantages and is beneficial to productivity. Since the spin coating method can be used to form a thin film, it can easily form a film as thin as a few microns. In addition, in the interlayer The insulating film 19 does not require a photoresist application step when making a wiring pattern. In this example, the acrylic resin is colored, and the entire surface can be made transparent by exposing the wiring pattern after making the wiring pattern. The osmic acid resin can also be made transparent by chemical processing.-Then, a transparent conductive film 21 is formed by sputtering and wiring patterns to form a transparent conductive film 21. The transparent conductive film 21 is made of indium tin oxide Therefore, the transparent conductive film 21 is electrically connected to each of the connection electrodes 5 through the contact holes 6, and then a metal film 23 is formed on the transparent conductive film 21, and a wiring pattern is formed to cover the gate line 2 and the source. The polar line 3, the thin film transistor 4, and the storage battery are used as the electrode 8 as the reflective electrode area 2 of the pixel electrode i. The transparent 19-1240098 A7 B7 V. Description of the invention (16) The conductive film 21 is not The portion covered by the metal film 23 constitutes the transmissive electrode region 20. The transparent conductive film 21 and the metal film 23 are electrically connected to each other. Any adjacent pixel electrodes are located on the gate line 2 and the source line. 3 The upper part is separated so that they are not electrically connected to each other. The metal film 2 3 is made of A1. It can also be made of any conductive material with high reflectivity such as Ta. In this embodiment, as shown in FIG. 2, the liquid crystal layer includes a two-color pigment mixed in liquid crystal. Molecule 2 4. The absorption coefficient of the dichroic pigment depends on the orientation of the molecule. The orientation of the dichroic pigment molecule 2 4 is controlled by controlling the electric field between the counter electrode 10 and the pixel electrode i to When the orientation of the liquid crystal molecules 25 is changed, it is changed. The change in the light absorption coefficient of the one-color pigment molecule 24 is used to generate an image display. Using the liquid crystal display panel of Example 1 having the foregoing structure, the display can be effectively used. By using light, when the ambient light is low, the light from the backlight is penetrated through the transmissive electrode area 200, and when the ambient light is high, the light reflected by the reflective electrode area 22 is used. Moreover, both the transmissive electrode region 20 and the reflective electrode region 22 can be used to generate a display. In addition, a liquid crystal display device having a bright display can be obtained. In this example, the metal film 2 3 of the reflective electrode region 2 2 of the pixel electrode 1 covers the thin film transistor 4, the gate line 2, and the source line 3. It is not necessary to provide a light shielding film to prevent light from entering the thin film transistor 4, and the pixel electrode is located on the gate line, the source line, and the light shielding portion on the storage capacitor electrode. In these areas, light leakage occurs in the form of functional areas, transformation lines, etc. in the area of Yifang, special feet, and shoulders. -20- scale applies Chinese national standard X 297 mm) 1240098

As a result, a region that cannot be used as a display region conventionally because it is shielded by a light-shielding film can be used as a display region. In this case, the display area is effectively used. When the gate line and the source line are made of metal, they are used as a light-shielding area 'in a transmissive display device and cannot be used as a display area. However, in the liquid crystal display device of this embodiment, the area of the conventional transmission type display area can be used as the reflective electrode area of the pixel electrode. Therefore, can = display of the Ming party. In this embodiment, the metal film 23 is located on the transparent conductive film 21. In this case, the metal film 23 has an uneven surface corresponding to the uneven surface of the transparent conductive film 2 丨. The uneven surface of the metal film 23 is better than the flat surface. The unevenness receives ambient light from the surface at various incident angles. The resulting liquid crystal display device provides a brighter display. 3 and 4 are plan views of another specific example of the liquid crystal display device according to the embodiment of the present invention. In these alternative embodiments, the area ratio of each pixel electrode = the transmissive electrode region 20 to the reflective electrode region 22 is changed from that shown in FIG. I. According to this method, a liquid crystal display device having desired reflectivity and light transmittance is obtained. In the alternative embodiment shown in FIGS. 3 and 4, the connection electrode 5 is located in the reflective electrode region 22. This condition suppresses a decrease in the brightness of the light passing through the transmissive electrode region 20. In the first embodiment, the metal film 2 3 of the reflective electrode region 22 of the m pixel electrode is located on the transparent conductive film 21. Or, as shown in FIG. 6, the metal film 23 can be only -21-^ Paper Su scale is applicable to Chinese National Standard (CNS) A4 specifications with 10X 297 public y 1240098 A7-~~ ------ B7 V. Description of the invention (18) ~ ----- Partially overlaps with the transparent conductive film 21 so as to be electrically connected to each other. (Embodiment 2) In Example 2 and Beta, a method for forming the metal film 23 is described. &lt; FIG. 5 is a plan view partially illustrating the eight films in the interlayer insulating film 19 (not shown). Fig. 6 is a cross-sectional view taken along the line c_d in Fig. 5. The surface of the insulating film 19, which is a salty intermediate layer, is made of unevenness by etching or the like, and a metal film 23 is formed on the uneven surface. Secondly, by forming a metal film 23 on the planar interlayer insulating film 19 by a method such as spin coating, and then making the surface uniform as described above, a metal film having an uneven surface can be obtained. twenty three. In a reflective liquid crystal display device, the uneven surface of the metal film 23 is preferably a flat surface because the far uneven surface receives ambient light at various angles. Therefore, by forming the metal film of the pixel electrode 1 on the interlayer insulating film 9 and having an uneven surface as shown in FIG. 6, the formed reflective liquid crystal display device provides a brighter display. The uneven surface of the metal film 23 is not limited to the shape shown in Fig. 5, that is, a surface having a concave portion of a circular plane. Or, the surface of the metal film 23 and the surface of the underlying interlayer insulating film 19 may have a planar polygonal or elliptical depression. The cross section of the recessed portion may have a polygonal shape instead of the semicircular shape shown in FIG. (Example 3) In Example 3, a liquid crystal display device using a guest-host display method will be described. -22- This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 1240098 A7

FIG. 7 is a cross-sectional view of a liquid crystal display device according to this embodiment of the present invention. The same components as those in Embodiment 1 are designated by the same reference numerals as those in Fig. 2. When using the guest-host display method, a mixture of guest-host liquid crystal materials is used, 3 ZLI 23 27 (Mμ ^ &amp; Co., Inc.) with black pigment and 0.5% optically active substance, S-8u ( Merck &amp; Co., Inc.), the following problems arise. That is, when using the backlight, if the optical path length dt of the light transmitted by the self-illumination light in the transmission area is greatly different from the optical path length 2dr of the light reflected from the ambient light in the reflection area, the case of using the light from the backlight and When the ambient light is used, even if the same voltage is applied to the liquid crystal layer, the brightness and contrast of the display formed are extremely different. Therefore, the thickness d t of the portion of the liquid crystal layer located on the transparent conductive film 2 in the transmissive region and the thickness of the portion of the liquid crystal layer located on the metal film 23 of the reflective region should be sufficient to satisfy the relationship d t = 2 d r. Therefore, in this embodiment, the thickness of the metal film 23 becomes to satisfy this relationship. Therefore, by making the optical path length of the light transmitted by the self-illuminating light in the transmission area equal to the optical path length of the light reflected from the ambient light in the reflection area, the center is balanced with each other, regardless of the type of light (from the back light Light or light from ambient light), can obtain substantially the same brightness and contrast, the prerequisite is that the same voltage is applied to the liquid crystal layer. According to this method, a liquid crystal display device having better display characteristics is obtained. By making the optical path length dt of the light transmitted by the self-illuminated light in the transmission area and the optical path length 2 dr of the light reflected from the ambient light in the reflection area approximately the same, __23- This paper standard applies the Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 1240098 A7 B7 V. Description of the invention (20 Unnecessary balance-average brightness and contrast can be obtained to a certain degree. No matter what type of light is used (light from the backlight or from the environment) (Light light), the contrast can be adjusted uniformly by changing the distribution voltage applied to the liquid crystal layer, even the optical path length dt of the light transmitted by the self-illuminated light in the transmission area and the light reflected by the ambient light in the reflection area. The optical path lengths of light 27 and 27 are also greatly different. Therefore, in the liquid crystal display devices of the foregoing embodiments ˜3, a single substrate is used for transmission mode display and reflection mode display, and a black mask is traditionally used to shield the light. The area can be used as the reflective electrode area of each pixel electrode. In this case, the display area of the pixel electrode of the liquid crystal panel can be effectively used to increase the brightness of the liquid crystal display device. In Examples 1 to 3, the storage capacitor electrode can be used to form a storage capacitor with each pixel electrode through an insulating film, and the reflective electrode area of the pixel electrode covers the capacitor electrode. Therefore, the area where the storage capacitor electrode is formed can be used for The display is used as the reflective electrode area of the pixel electrode. The metal film of the reflective electrode area of each pixel electrode is located transparently, using a transparent guide with an uneven surface, and the emitter electrode area has an uneven surface: Γ The opposite of the pixel electrode Ambient light is used as display light. 'The metal film using reflective areas with various entrance angle gates can be located on the surface with uneven hooks. The reflective electrode area of the formed pixel electrode has uneven hooks. "可Use ambient light with various angles of people as display light (24-297 mm) 1240098

DESCRIPTION OF THE INVENTION (21) The metal film of the reflective electrode area of each pixel electrode is located in the transparent area of the pixel electrode. The transparent conductive film is thicker. The ambient light is passed through and returned to the liquid crystal layer in the reflective electrode area of the pixel electrode. The light path length of the part is the same as the light from the backlight passing through the liquid crystal layer in the transmissive electrode region of the pixel electrode (the light path length is approximately equal, and the path length is compared with each other. By understanding the approximate light path length Zhan, Ke sentence] M step, husband, and Γ change the light characteristics of the liquid crystal layer located in the reflective area and the transmission area changes. The part of the crystalline layer located on the reflective electrode area of each pixel electrode The thickness is a half of the thickness of the portion of the crystal layer on the transmissive electrode region. This allows ambient light to pass through and return to the length of the light path of the portion of the liquid crystal layer in the reflective electrode region of the pixel electrode, and The light passes through the liquid crystal layer in the pixel electrode and the transmissive electrode area, and the length of the optical path is approximately equal, and the path length is compared with each other. By knowing the approximately pure length, the adjustable sentence penetrates Changes in the light characteristics of the liquid crystal layer in the reflection region and the transmission region. (Embodiment 4) FIG. 8A is a plan view of a pixel portion of an active array substrate of a liquid crystal display device according to Embodiment 4 of the present invention. FIG. 8B It is a cross-sectional view taken along the line 8-8 of FIG. 8. The active array substrate of this embodiment includes a gate line 41, a data line 42, a driving element 43, a drain 44, a storage capacitor electrode 45, and a gate insulating film. , Insulating substrate 47, contact hole 48, interlayer insulating film 49, reflective pixel electrode 50, and transmissive pixel electrode 51. Each storage capacitor electrode 45 is electrically connected to a corresponding drain electrode 44, -25-

1240098

5. Description of the invention (a)

Gate insulation film 4 6 a 0 μa 1 丄 ® layer insulation film 49, connected. Each pixel of the active array substrate having the structure described above includes a reflective pixel electrode 50 and a transmissive pixel electrode 51. Therefore, as shown in FIG. 8b, each pixel includes a reflective electrode region, including a reflective pixel electrode 50, which reflects external light rays, and includes a transmissive pixel electrode 51, which transmits light from the backlight. FIG. 9 is a cross-sectional view of the liquid crystal display device of this embodiment, including the active array substrates π shown in FIGS. The liquid crystal display device also includes a color filter layer η, a counter electrode 5 4, a liquid crystal layer 5 5, an alignment film 5 6, a polarizing plate 5 7, and a back-illuminated transmission pixel electrode 5 (transmission electrode area) so that The light from the backlight 5 8 penetrates the I area and does not contribute to the brightness of the panel when the backlight 5 8 is turned off. Conversely, the area where the reflective pixel electrode (reflective electrode area) reflects external light can increase the brightness of the panel regardless of whether the backlight 5 8 is on / off. Therefore, in each pixel, the area of the reflective electrode region is larger than the area of the transmissive electrode region. In this embodiment, the reflective pixel electrode 50 is located on the corresponding transmissive pixel electrode 51 to be electrically connected to each other so that the same signal is applied to the reflective pixel electrode 50 and the transmissive pixel electrode 51. . Or the reflective pixel electrode 50 and the transparent pixel electrode 51 are not electrically connected to each other to receive different signals for different displays. In the liquid crystal display device shown in FIG. 9, the light from the backlight 5 8 is incident on the reflective surface. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 male directors) 1240098 A7.

Part of the light on the pixel electrode 50 is irradiated with blood, + especially, and is used to display light. In order to overcome this kind of problem, the repaired master and hard crystal display device shown in FIG. 10 includes a micro lens 59 for each pixel and a micro transparent lens, and a protective layer. 60. With this structure, the light from the back light 5 8 is collected on the part of the transmissive electrode area where the reflective pixel electrode 50 is not formed through the micro-absorptive soil transmissive surface 5 9. A, * ^ &quot; The amount of light improves while showing partyness.

The display device replaces the active matrix: 1 B is a plan view of a pixel portion of a liquid crystal column substrate according to Example 4 of the present invention, taken along B-B in FIG. 1 A. FIG. Figure i is a cross-sectional view. In the king moving array substrate of tf shown in Figs. 1 A and 1 B, the areas of the transmission pixel 51 and the reflection pixel electrode 50 of each pixel are the same as those shown in Figs. The array substrate is opposite. The ratio of the area of the area of the reflective pixel electrode 50 to the area of the area of the transparent pixel electrode 51 may be appropriately changed. When the active array substrate shown in FIGS. 8A and 8B is compared with those shown in FIGS. NA and nB, the advantages of the active array substrate shown in FIGS. 8A and 8B are because the reflective pixel electrode 50 is located on the driving element 43. To prevent external light from entering the moving element 4 3 ′, since the area of the transmissive pixel electrode 51 is located at the center of each pixel, it is easier to form a micro lens 59 for collecting light. In this embodiment, because the reflection area and the transmission area are located in a pixel, the pixel aperture ratio of the pixel is as large as possible. In order to meet such a demand, this embodiment adopts a high mirror-hole ratio structure, in which an interlayer insulating film 49 including an organic insulating film is sandwiched between the pixel electrode and the gate line 41 and the source line 43. Other structures can also be used. -27- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 1240098

(Embodiment 5) FIG. 12A is a plan view of a pixel portion of an active array substrate of a liquid crystal display device according to Embodiment 5 of the present invention. Fig. 12B is a sectional view taken along the line Atc_c in Fig. 12. In the active matrix liquid crystal display device of Embodiment 5, a reflective pixel electrode 50 is formed on the inclined or recessed portions and the raised portions of the interlayer insulating film 49. The external light is thus reflected from the reflective pixel electrode 50 in a wide orientation range, so the visible angle becomes wider. In this embodiment, the portion of the interlayer insulating film 49 located on the gate line 41 and the source line 42 is the thickest, and the portion located on the drain 44 is completely etched to form an inclined or recessed portion and a raised portion. This situation eliminates the need to form a contact hole for electrically connecting the drain 44 and the reflective pixel electrode 50, and prevents the orientation of the liquid crystal molecules from being disordered due to the steep order of the contact hole. This situation increases the mirror-to-hole ratio. In this embodiment, the 'drain electrode 44' is a transparent electrode made of indium tin oxide, and serves as a transmission pixel electrode 51. The inclination angle of the inclined portion or the recessed portion and the raised portion of the intermediate layer insulating film 49 should be small enough to form an alignment film on the formed substrate and rub it. Therefore, the optimal conditions should be determined based on the individual friction conditions and the type of liquid crystal molecules. In this embodiment, as in Embodiment 4, a micro-lens can be provided below the drain 44 as a transmission pixel electrode 5 to improve the display brightness when the backlight is connected. (Example 6) Figure 1 3 A is an active array substrate-28 of a liquid crystal display device according to Example 6 of the present invention.-This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 1240098 A7 B7. 2. Description of the invention (25) Plan view of foot picture element. Figure 3B is a sectional view taken along line D_D of Figure 3A. In this embodiment, the reflective pixel electrode 50 is formed at the same height as the gate line 41 in the same step. With this structure, since the individual steps for forming the reflective pixel electrode 50 are not required, it is not necessary to increase the number of steps and the manufacturing cost. In this embodiment, the reflective pixel electrode 50 is not connected to the drain 44 of the driving element 43, but is only used to reflect external light. Only the transmission pixel electrode 51 is used as an electrode for driving the liquid crystal. In other words, the light transmittance of the light reflected by the reflective pixel electrode 50 is controlled by controlling the liquid crystal layer using the voltage of the transparent pixel electrode 51. If no signal is input to each reflective pixel electrode 50, a floating capacitance is generated between the reflective pixel electrode 50 and the corresponding drain electrode 44 or the transmissive pixel electrode 51. To avoid such problems, the reflective pixel electrode 50 should have a signal that does not adversely affect the display. By connecting each reflective pixel electrode 50 to an adjacent gate line, a floating capacitor can be avoided, and a storage capacitor can be formed between the reflective pixel electrode 50 and a corresponding drain electrode 44. This embodiment In the same embodiment as in Example 4, the 胄 -type lens can focus light on the transmissive pixel electrode and improve the display brightness when the backlight is connected. In this embodiment, 'because the reflective region and the transmissive region are also formed in the -pixel, Therefore, the pixel hole ratio of this pixel is as large as possible. In order to meet this requirement, a high mirror hole ratio structure is used, in which an organic insulating film is used as the interlayer insulating film. Other structures can also be used. -29 This paper size is applicable to China National Standards (CNS) A4 specifications (210 X 2974 ^) 1240098 A7 ------- -B7 V. Description of the invention (26) (Embodiment 7) Figure 14 A is a liquid crystal display according to Embodiment 7 of the present invention A plan view of a pixel portion of an active array substrate of the device. FIG. 14B is a cross-sectional view taken along the line EF of FIG. 14Λ. In this embodiment, the 'reflective pixel electrode 50' is at the same height as the source line 42 Formation. This structure is used because the source line 42 can be formed. The reflective pixel electrode 50 is formed, so the number of steps and manufacturing cost are not increased. In this embodiment, because a high mirror-to-hole ratio structure that penetrates the intermediate layer insulating film 49 is used, the reflective pixel electrode 50 is only used The external light is reflected. Only the transmissive pixel electrode 51 is used as an electrode for driving the liquid crystal. This embodiment is different from the sixth embodiment in that the reflective pixel electrode 50 in each pixel is electrically connected to the corresponding pixel. Electrode 44. In another case, the interlayer insulating film 49 is not formed on the drain electrode 44 and the drain electrode 44 is used as a transmissive pixel electrode, and the reflective pixel electrode 50 is also used to drive liquid crystal molecules. In the example, if Example 4 is used, a micro-lens can be provided to irradiate light on the transmissive pixel electrode 51, and improve the display brightness when the backlight is connected. Moreover, in this embodiment, because a pixel In order to meet such conditions, a high mirror hole ratio structure using an organic insulating film as the interlayer insulating film is used. Therefore, other structures can also be used. Therefore, in In Examples 4 to 7 of the present invention, Active array type liquid crystal display device switching between reflective type and transmissive type. The liquid crystal display device can be transmissive and reflective by the user according to the conditions of use. -30- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 Public director) '----- 1240098

Switching between modes of use 'provides sufficient brightness regardless of the conditions of use, while reducing energy consumption and extending use time. It is also a transmissive / reflective switchable active array liquid crystal display device, which can be used as a reflective liquid crystal display device in a bright environment, and as a transmissive liquid crystal display device in a dark environment. Because the reflective pixel electrode and the transmissive pixel electrode are electrically connected to each other, it is not necessary to separately provide driving signals. What to do here, and Qiu Ni to interpolate the structure of the King Motion Array substrate 〇 When a reflective pixel electrode is formed on the top of the driver element, prevent external light from entering the driver element. The transmitted pixel does not contribute to the brightness of the panel when the backlight is turned off, and the reflective pixel electrode contributes to the brightness of the panel regardless of whether the backlight is on / off. Therefore, by increasing the area of the reflective pixel electrode, even if the backlight is cut off or less light is emitted, the display brightness can be stabilized. The light from the back light that is blocked by the reflective pixel electrode, the gate line, etc. can be focused on the transmissive pixel electrode. In this way, the brightness of the display device can be increased without increasing the brightness of the backlight itself. The reflective pixel electrode can reflect foreign light in a wide orientation. Therefore, a wider viewing angle can be obtained. The reflective pixel electrode can be formed without adding additional steps. This prevents an increase in the number of steps and manufacturing costs. The reflective pixel electrode can be electrically connected to the gate line. This prevents floating capacitors. -31-This paper size applies Chinese National Standard (CNS) A4 specifications (210X297 mm) 1240098 A7 B7 V. Description of the invention (28) &quot; It can be opened into a storage capacitor with infinite poles. -The reflective pixel electrode may have the same signal as the counter electrode. This prevents floating valleys from occurring. Moreover, the reflective pixel electrode can be used to form a storage capacitor for use with a voltage applied to the pixel electrode. (Embodiment 8) In Embodiment 8, a reflection / transmission type liquid crystal display device of the present invention is described. First, the principle of generating interference colors in the liquid crystal display device of Embodiment 8 will be described. FIG. 23 is a conceptual diagram illustrating the generation of interference colors. Light is incident on the glass substrate. The incident light is reflected by the reflection film and output from the glass substrate. In the foregoing case, when the light incident at the incident angle A i is reflected from the convex and concave portions of the reflective film and output at the output angle βο, it is considered that an interference color is generated. The light path difference between the two reflected beams is expressed by the following formula (1): 6 -ijsinOi + h (1 / c〇s8z * + * 1 / cos9o 1) * η-. \ {LsinSo + -j- * tan0o ') s ± n0o ·} -sin9i-sin9o) s- h {(1 / cos0i r 4 * l / cos0o 1) * n-(tan0i '-rt ηηθο,) Sine〇} ..... ⑴' where β P is the incident angle of the concave portion of the reflective film, 0 ο 'is the concave portion of the reflective film, L is the distance between the incident points of the two beams on the glass substrate, and h is the concave portion of the reflective film reflecting the The height of the point of the light beam relative to the point at which the concave portion of the reflective film reflects another light beam, and η is the refractive index of the glass substrate. -32- This paper size is applicable to China National Standard (CNS) A4 specification (210X297mm)! 24〇98 A7

It can be calculated only at 0 V, so 'this optical fe difference (5 is simplified because the formula (1) is only 0i and 2 0 and &lt; 9i, two when = = ㊀ and, two 00, = 0, the following formula (2): (2) δ-h {2n / cos0, — 2tan0f. S [uq When arbitrary wavelengths i and 2 are taken into consideration, the output beam reflected from the convex and concave portions is at 5 / λ 1 =: m ± 1/2 (m is rounded: weaken each other, and strengthen each other at 5 / λ 2 = m. Therefore, we get the following formula (3) (4) δ = (1 / λ 1 — 1 / λ2) = 1/2 The above formula (3) is also expressed as the following formula (4): δ = (λ 1 · 入 2) / 2 · (λ2 — λ 1 is why, according to the previous formulas (2) and (4) ), The height h can be expressed by the following formula (5): ^ = 1/2-{(Xi-X2) / (λ2--λΐ-)}. {Cos9 r / (2n-2sin8 1 · sin0)}. .... (5) According to the foregoing formula, in order to avoid interference colors, it is found that the reflective surface of the reflective film should have a continuous wave shape. In this embodiment, in order to form the reflective film, at least two types of The bulge portions of different heights form a polymer resin film covering the bulge portions on the substrate, and a polymer resin film is formed on the polymer resin film. Reflective film made of highly reflective materials. -33-

1240098 A7 B7 V. Description of the invention The manufactured reflective film can be used in the reflective part of reflective / transmissive liquid crystal display devices. Since the reflecting portion has a reflecting surface of a continuous wave type, interference with light reflected from the reflecting portion can be prevented. When the raised portion is optically formed using a photomask, it can be formed under good reproducibility by setting the same illumination conditions. In the reflection / transmission type liquid crystal display device of this embodiment, no bumps are formed in the transmission portion made of a material having high transmission efficiency to improve the transmission efficiency. However, even if a raised portion is formed in the transmitting portion, it is possible to display with transmitted light. Fig. 15 is a sectional view of a reflection / transmission type liquid crystal display device according to an embodiment of the present invention. Referring to FIG. 15, a gate insulating film 6 1 a is formed on a glass substrate 61. On the portion of the glass substrate 61 that is located under the reflective electrode 69 having a reflective function, any ridges 64a and low ridges 64b are formed. The high ridge portions 6 4 a and the low ridge portions 64 b are covered with a polymer resin film 65. Since the irregular ridges 6 4 a and the low ridges 6 4 b are formed on the glass substrate 61 through the gate insulating film 6 1 a, the polymer resin film 65 is located in the high ridges. The upper surfaces of the portions 64a and the low ridge portions 64b have a continuous wave shape. The polymer resin film 65 is located on almost all surfaces of the glass substrate 6 and not only in the lower region of the reflective electrode 69. The reflective electrode 69 is made of a material having a high reflection function, and is located on a portion where the polymer resin film 65 has a continuous wave shape and is located on the high convex portion 64a and the low convex portion 64b. -34-

1240098 A7 B7 V. Description of the invention (31 The transmissive electrode 6 8 is also located on the glass substrate 61 through the gate insulating film 6 1 a, and is separated from the reflective electrode 69. The transmissive electrode 6 8 is made of highly transparent Functional materials, such as indium tin oxide (〖T〇). Polarizing plate 90 is attached to the back of the manufactured active array substrate when the device is a module. Then, the backlight 91 is placed on the polarizing plate 90. From the rear, the light 9 1 radiates and directs part of the light to the transmissive electrode 6 § passes through the transmissive electrode 6 8 and subsequent active array substrates. However, part of the light directed to the reflective electrode 6 9 is a self-reflective electrode The back surface of 6 9 is reflected to the backlight 9 j. Since the back surface of the reflective electrode 6 9 has a continuous wave shape, the reflected light from the reflective electrode 69 is scattered as shown by the arrow in FIG. 5. The scattered light Then, the backlight 9 1 is reflected to the active array substrate. A part of the light passes through the transmission electrode 68 and the subsequent active array substrate. Therefore, “in the active array substrate including the reflective electrode 6 9 having the aforementioned shape” comes from Backlit The light reflected by the emitter electrode 69 can be used for display. Unlike a transmissive liquid crystal display device, this can use light more effectively than an actual mirror hole than predicted. In particular, if the reflector electrode has a flat shape, The rectangular reflection is mainly generated, so it is difficult to reflect again and pass through the transmissive electrode 68. However, in this embodiment, the reflective electrode 6 9 having a continuous wave type is used to return the reflected light to the back light at the transmissive electrode 6 The lower part of the layer 8 uses light more efficiently. Figure 16 shows the reflectivity of the reflective electrode 69 and the backlight 9 1 compared with a standard white board, which is about 90%, and the polarizing plate 90 has a light transmission. When the degree is about 40%, the relationship between the ratio of the aperture to the light transmittance and reflectivity is assumed. This relationship is based on the assumption -35- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1240098 A7 ____ B7 V. Description of the invention (32) The pixel electrode covers the entire display surface, and is calculated without considering the existence of bus bars and active components. As shown in Figure 16 'for external incident on the side of the substrate Light reflecting electrode 6 of 9 The radioactivity is calculated by multiplying the reflectivity of the reflective electrode 69 by the ratio of the area of the reflective electrode 69 to the area of the entire pixel electrode. For the light transmission of the transmissive electrode 68 from the backlight 91 The degree is not exactly equal to the mirror aperture ratio a (that is, the ratio of the area of the transmissive electrode 68 to the area of the entire pixel electrode) 'but the value b' includes the light component reflected from the backlight and reflected by the reflective electrode 69, which can be used The display is added to the mirror hole ratio a. Therefore, unlike the conventional transmissive liquid crystal display device, since the light from the backlight 9 1 and the light reflected by the reflective electrode 69 is also used, it can be compared with the actual mirror hole ratio. Predictors use light more efficiently. Fig. 17 is a graph showing the relationship between the aperture ratio and the transmission efficiency (transmittance / mirror ratio). As shown in FIG. 17, according to the calculation, when the mirror-to-hole ratio is 40%, the utilization rate of the light from the backlight 9 1 and reflected by the reflective electrode 69 is as high as directly from the backlight 9. 1 50% of the light intensity passing through the transmitting electrode 68. According to the calculated values shown in FIG. 17, it is also found that the larger the ratio of the area of the reflective electrode 69 to the area of the entire pixel electrode, the higher the utilization rate of the light reflected by the reflective electrode 69. A specific example of the reflective / transmissive liquid crystal display device of Embodiment 8 will be described below. FIG. 18 is a plan view of a reflective / transmissive liquid crystal display device according to Embodiment 8 of the present invention. 19A to 19F are cross-sectional views taken along the line F-F of FIG. 18, and illustrate a method for manufacturing the liquid crystal display device of this embodiment. -36- This paper size applies to China National Standard (CNS) A4 (210X 297mm) 1240098

18 and 19F, an active array substrate of the reflective / transmissive liquid crystal display device includes a plurality of gate bus lines 72 as scan lines and a plurality of source bus lines 74 'as signal lines which cross each other . In each rectangular area surrounded by adjacent gate bus lines 72 and adjacent source bus lines 74, a transmissive electrode 68 made of a material having high light transmission efficiency and a reflective electrode 68 made of a material having high reflectivity are placed. Material made of reflective electrode 69. The transmissive electrode 68 and the reflective electrode 69 constitute a pixel electrode. Question electrode 73 is bused from this gate? 2 extends toward the pixel electrode in a corner portion of each region where the pixel electrode is formed. A thin film transistor (tft) 71 is connected to a terminal of the gate electrode 73 as a switching element. The “gate electrode” itself constitutes a part of the thin film transistor 71. The thin film transistor 71 is located on the gate electrode 73 on a glass substrate 6 as shown in FIG. 19F. The gate electrode 73 is covered with The interlayer insulating film 6ia is used to form a semiconductor layer 77 on the interlayer insulating film 61a, and the gate electrode 73 is covered by the interlayer insulating film 61a. A pair of contact layers 7 are formed on the side portions of the semiconducting layer ". 8. The source electrode 75 is located on a contact layer, and is electrically connected to the corresponding source bus line 74. A side portion of the source electrode 75 overlaps with the gate electrode 73 according to an insulation method to form a part of the thin film transistor 7 丨. A drain electrode%, which also constitutes a part of the thin film transistor 71, is formed on the other contact layer 78, away from the source electrode 75, and overlapped with the gate electrode 73 according to the insulation method. The drain electrode 76 is electrically connected to the pixel electrode via the bottom electrode 8a. The storage capacitor is formed by forming the low-layer electrode 8] a, and the gate-37- this paper standard applies Chinese National Standard (CNS) A4 specification (210X297 public director) 1240098 A7 B7 V. Description of the invention (34) —- The insulating film 61a overlaps a gate bus line 72 of an adjacent pixel electrode for a subsequent pixel row. The bottom electrode 8a may be located on a substantially entire area, and a raised portion is formed as described below to uniformize the influence of forming the layer. A high ridge portion 64a, a low ridge portion 6 4 b, and a top polymer resin film 65 are formed under each reflective electrode 69. The upper surface of the polymer resin film 65 has a continuous wave pattern that reflects the existence of the ridges 6 and 6 4 b. The polymer resin film 65 is formed on the surface of the substantially monolithic glass substrate 61 instead of being located only in a region under the reflective electrode 69. In this embodiment, as the polymer resin film 65, for example, 0fpr_800 manufactured by Toky0hka Co., Ltd. is used. The reflective electrode 69 is located on the continuous wave-shaped portion of the polymer resin film 65, and is located on the high ridge portion 6 4a and the low ridge portion 6 4 b. The reflective electrode 6 9 is made of a material having a high reflection efficiency, such as a 1. The reflective electrode 69 is electrically connected to the corresponding drain electrode 76 through the contact hole 79. In the reflective / transmissive liquid crystal display device of this embodiment, the transmissive electrode 68 is separated from the reflective electrode 69. The transmissive electrode 68 is made of a material having a high transmissivity such as rhenium tin oxide. A method for forming the reflective electrode 69 and the transmissive electrode 68 is described below with reference to FIGS. 19A to 19F, which is a main part of the reflective / transmissive active array substrate 70. First, as shown in FIG. 19A, a plurality of gate bus bars 72 (see FIG. 18) made of Cr, Ta, and the like are formed on a glass substrate 61, and extend from the gate bus bars 72. -38-This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 1240098 5. Description of the invention (35) The entire surface of the glass substrate 61 is formed of materials made of SiNx, SiOx and other materials. The gate insulating film 61a covers the gate busbar 72 and the gate electrode ”7 3 A portion of the gate insulating film 6 1 a formed on the gate electrode 73 is formed of amorphous silicon (a_Sl), polycrystalline silicon And CdSe semiconductor layers 77 and 7. A pair of contact layers 78 made of & _§ 丨 and other materials are formed on both side portions of each semiconductor layer 77. A contact layer 78 is formed of Tl 'M0, a source electrode 75 made of a material such as Ti, and a drain electrode 76 made of a material such as τι, m0, VIII, etc. is formed on another contact layer 78. In this embodiment, The product No. 7059 with a thickness of U mm manufactured by Corning Inc. is used as the material of the glass substrate 61. As shown in FIG. 19B, a metal layer 81 constituting a part of the source bus bar 74 is formed by sputtering. The metal layer 81 can also be used After forming the bottom electrode 81 &lt;, as shown in FIG. 19C, by sputtering Forming the wiring pattern also forms part of the indium tin oxide layer 8 of the source bus bar 74. Therefore, in this embodiment, the source bus bar 74 has a metal layer 8 and an indium tin oxide layer. The double-layer structure formed by 80. The advantage of the double-layer structure is that even if the metal film 81 constituting the source bus bar 74 is defective, the electrical connection of the source bus bar 74 can still be made of indium tin oxide layer 8 〇Keep. This reduces the possibility of disconnection of the source bus bar 74. The hafnium tin oxide layer 80 is also used to form the transmissive electrode 68. It can form the transmissive electrode 68 while forming the source bus bar 74, and Prevent the number of layers from increasing. Then, as shown in Fig. 1 D, apply the -39- on the area where the reflective electrode 6 9 is to be formed. This paper size applies the Chinese National Standard (CNS) A4 specification (21〇X 297) 1240098 A7 _____ B7 V. Description of the invention (36) The photosensitive resin resist film is used to form circular protrusions 64a and 64b with a substantially circular cross section. The protrusions 64a and 64b are not located on the transmissive electrode 68. It is preferable that a voltage is effectively applied to the liquid crystal layer. When the convex and convex portions 64a and 64b are formed on the emitter electrode 68, there is no significant optical effect. The convex and convex portions 64a and 64b are formed in the reflective electrode region with reference to FIGS. 20A to 2D. First, as described in FIG. 20A, a photosensitive layer is formed on a glass substrate 6 1 (in fact, the upper layer has a metal layer 81 and a bottom electrode 8 1 a on the metal layer 81) by a spin coating method. 2. A resist film made of a flexible resin 62. The resist film 62 is formed using the same photosensitive resin as the polymer resin film 65 described below, that is, OFPR-8 00, using a spin coating method at a rotation speed of about 500 to about 3 0 0 0 The rotation speed is preferably in the range of 1 minute. In this embodiment, the thickness is 2.5 micrometers, which is 15 rpm and 30 seconds. After that, the glass substrate 61 with the resist film 62 on the upper layer is baked in advance at 90 ° C, for example, for 30 minutes. Thereafter, as shown in FIG. 20B, a photomask 63 is placed on the resist film 62. The photomask has a shape as shown in FIG. 21 and includes, for example, two circular holes 6 3 a and 6 j b penetrating the plate 6 3 c. The photomask 63 is then illuminated from above as shown by an arrow. The photomask of this embodiment has a circular hole 63a with a diameter of 5 micrometers and a circular hole with a diameter of 3 micrometers, which are arbitrarily arranged. The gap between any adjacent patterned holes should be at least about 2 microns. However, if the gap is too large, it will be formed on the upper layer later. -40- This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) 1240098.

It is difficult to obtain a continuous wave pattern for the polymer resin film 65. The formation &lt; substrate is developed using a developer having a concentration of 2.38%, for example, NMD_3 manufactured by Tokyo Corporation. As a result, as shown in FIG. 2c ', several types of micro-protrusion portions 64a, 64b having different heights are formed in the reflective electrode region of the glass substrate 6 ?. The ridges 64a and 64b have a top edge having a square shape. The pattern holes 63a having a diameter of 5 micrometers and the pattern holes 63b having a diameter of 3 micrometers each form a raised portion 64a having a height of 2.48 micrometers, and a raised portion 64b 'having a height of ㈧㈧m. The height of the raised portions 64a, and 64b can be changed by changing the pattern holes and 6 3 b / exposure time and development time. The size of the pattern hole 63 &amp; is not limited to the foregoing. Thereafter, as shown in FIG. 20D, the glass substrate 61 having the ridges 64a, 64b in the upper layer is heated at about 2 G0X: for one hour. This softens the square top edges of the raised portions 64a and 64b 'to form raised portions 64a and 64b having a substantially circular cross section. As shown in FIG. 19E, a polymer resin is applied to the formed glass substrate 61 by a spin coating method to form a wiring pattern to form a polymer resin film. Using the aforementioned material OFPR-8 00 as a polymer resin, spin coating is performed at a rotation speed in a range of preferably about 1,000 to about 3,000 revolutions per minute. In this embodiment, 'remote spin coating is performed at a rotation speed of 2000 revolutions per minute. According to this method, a polymer resin film 65 having a continuous upper surface is obtained on the glass substrate 6 丨, which is a flat surface having no raised portions. As shown in FIG. 19F, the reflective electrode 69 manufactured by A1 is, for example, sputtered -41-

1240098 A7 B7 V. Description of the invention (38 method is formed on a predetermined portion of the polymer resin film 65. The materials suitable for the reflective electrode 69 include A1, Ni, C in addition to A1 and A1 alloys. r and A g. The thickness of the reflective electrode 69 is preferably in the range of about 0. 01 to about 1.0 micron. A polarizing plate (not shown) is added to the active array substrate manufactured in this embodiment. On the back side, the backlight is placed on the outer surface of the polarizer. Right, the A1 film is formed after removing the polymer resin film 65 on the transmissive electrode 68, so that electrical corrosion occurs. Therefore, the The portion of the polymer resin film 65 located on the transmissive electrode 68 should be formed after the reflective electrode 69 is formed. This removal can be performed by ashing while the polymer resin film 65 is located at the connection position. The portion on the electrode of the driver at the edge of the active array substrate 70. This improves the program efficiency and can effectively apply a voltage to the liquid crystal layer. If the method for forming the raised portion is not used, the polymer resin film 6 is not used. 5 can be obtained from indium tin oxide A layer of μ 〇 is formed between the transmissive electrode 68 and the reflective electrode 6 9 manufactured by A1 to prevent the occurrence of electric corrosion. The foot reflective electrode 6 9 is made of a material with high reflection efficiency and has a continuous β The upper surface of the wave shape I, because the bottom polymer resin film 65 has a continuous wave shape as described above. In this example, a transmission electrode 68 is formed when the source busbars 74 are formed. When the pole busbar 74 is a single-layer structure including a metal layer, rather than a double-layer structure including a metal layer 81 and an indium tin oxide layer 80, the transmissive electrode 68 can communicate with the source busbar 7 4 individual formation. M Pei Ding

k -42-

1240098

The wavelength dependence of the reflected light, which has a continuous wave type and is made of a material with high reflection efficiency, is based on the method shown in Figure 22, and the measured structure is by simulation and actual liquid crystal Λ = amount. The electrode 69 is formed under the conditions during actual use. In detail ^ The pseudo glass pot 66-which is substantially equal to the refractive index of the actual liquid crystal layer-is attached to the active array substrate 70 and uses ultraviolet light with a refractive index of 15 (pure adhesion) to form reflective electrodes 6 9 and transmissive electrodes 6 7 on top of each other. . As far as the measurement system is concerned, the light source L1 is placed so that the incident clasp is incident at an incident angle θ1 with respect to the simulated glass pot 66 normal line ml, and the photomultiplier. It is placed to capture a fixed angle light beam reflected at the output angle with respect to the normal m2. With the aforementioned structure, the photomultiplier 12 captures the scattered light beam L2 as the light beam L1, which is reflected by the scattered light incident on the simulated glass $ 6 at an incident angle 0 i at an output angle 0 °. The aforementioned determination was made at 01 = 30. And 0〇 = 2〇. It is performed under the conditions to prevent the photomultiplier L2 from capturing the normal reflected light beam emitted from the light source L1 and reflected from the surface of the simulated glass 66. FIG. 24 is a diagram showing the wavelength dependence of the reflected light in this embodiment. As shown in Fig. 24, "the reflected wavelength dependency is difficult to recognize in this embodiment", and it is proved that a good white display is obtained. In this embodiment, the shape of the patterned holes 6 3a and 6 3 b of the photomask 63 is circular. Other shapes such as rectangular, oval, and bar shapes can also be used. In this embodiment, raised portions 64a and 64b having different heights are formed. Or can also form a raised part with a single height or have three or more different -43- This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 1240098 A7 B7 Description of the invention (40 height, to A reflective electrode having good reflection characteristics was obtained. However, it was found that when a raised portion having two or more different heights is formed instead of a raised portion having a single degree of southness, the wavelength dependence of the Tsai to reflection characteristics can be obtained A preferred reflective electrode. If it is determined that only the ridges 64a and 64b can be used to obtain an upper surface having a continuous wave shape, it is not necessary to form a polymer resin film 65. Only the resin film 62 (see Figs. 20B and 20C) is to be obtained. On the upper surface of the continuous wave type, a reflective electrode 69 is formed on the upper layer. In this case, the step of forming the polymer resin film 65 can be omitted. In this embodiment, OF PR manufactured by Tokyo Ohka Co., Ltd. is used. -8 00 as the photosensitive resin material. Any other positive or negative photosensitive resin material that can be used to make wiring patterns by exposure method can also be used. Examples of this photosensitive resin material include Including: OMR-83, OMR-85, ONNR-20, 〇FPR-2, OFPR-8300 and OFPR_500 manufactured by Tokyo 〇hka Co., Ltd .; 1400 manufactured by Shlpley Co., Ltd. -27; photaneath manufactured by Toray Industries, lnc .; tRW_101 manufactured by Sekisui Fine Chermcal Co., Ltd .; and rioi &amp; R633 manufactured by Nippon Kayaku KK. This example In the invention, a thin film transistor 7 丨 is used as a switching element. The present invention can also be applied to an active array substrate using other switching elements such as a metal insulator metal (M), a diode, and a varistor. Therefore, 'as described above, in In the liquid crystal display device and the method for manufacturing a liquid crystal display device of the embodiment 8, the formation is made of a material having high reflection efficiency. -44- This paper size is applicable to China National Standard (CNS) A4 specification (21〇X 297) ) 1240098 A7-^ _____ B7 V. Description of the invention (M) The reflective electrode is made with a continuous wave type to reduce the wavelength dependence of the reflectivity so as to obtain a good white display through reflection without causing interference colors. Because the photomask is used to shape the substrate by optical technology. This bulge can be confirmed, so good reproducibility can be confirmed. It is also possible to obtain a wave-shaped upper surface formed by the reflective electrode with good reproducibility. It can be made of a material with high light transmittance while forming the source busbar. The transmissive electrode of the reflective / transmissive liquid crystal display device can be formed under the condition that the number of steps is not more than that of the conventional liquid crystal display device. By forming a continuous wave pattern for the reflective electrode, light can be used more efficiently than expected in actual mirror holes. According to the liquid crystal display device of this embodiment, a reflective portion made of a material with high reflection efficiency and a transmission portion made of a material with high light transmission efficiency are formed in a display pixel. With this structure, when the environment is dark, the device serves as a transmissive liquid crystal display device, and uses sufficient light from the backlight to penetrate the transmissive area to display an image. When the environment is relatively dark, the device is used as a reflective / transmissive liquid crystal display device, which simultaneously uses the light from the back light to penetrate the transmissive area and the light reflected from the reflective area including a film with a relatively high reflectivity. Display the image. When the environment is bright, the device is used as a reflection type liquid crystal display device 'to display an image by using light reflected from a reflection area including a film having a relatively high reflectivity. In other words, according to this embodiment, the pixel electrode of each pixel includes a reflection region made of a material with high reflection efficiency and a transmission region made of a material with high light transmission efficiency. Therefore, it has good luster in any of the foregoing situations. -45- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1240098 A7 B7

Liquid crystal display device with efficiency and superior productivity. In this embodiment, the upper surface of the reflective region made of a reflective material has a continuous wave pattern. It prevents the specular phenomenon under the astigmatism device which is not provided when the reflection area is flat, and the paper white display is obtained. In this embodiment, a photosensitive polymer resin film having a plurality of raised and convex portions is located under a reflective region made of a reflective material. With this structure, even if there is a change in the continuous smooth concave portion and the convex portion, the display is not affected. Therefore, the liquid crystal display device can be manufactured with good productivity. A transmission region made of a light-transmitting efficiency material is formed at the same time when the source busbar is formed. This greatly shortens the manufacturing process of the liquid crystal display device. A protective film is formed between the transmission region and the reflection region. This prevents the generation of electrical names between the transmissive and reflective areas. The reflective material remaining on the transmissive area and the terminal electrode is removed at the same time as the wiring pattern is made in the reflective area. This greatly shortens the manufacturing process of the liquid crystal display device. In this embodiment, the light radiated from the back light passes through the transmission area and leaves the substrate ', is reflected from the back surface of the reflection area back to the back light, and is then reflected to the substrate. A portion of the re-reflected light passes through the transmission area and leaves the substrate. Because reflection generally occurs when the reflection area is planar, it has been difficult for the re-reflected light to effectively pass through the transmission area. However, in this embodiment, because the reflection area has a continuous wave type, the light emitted from the backlight is scattered ', so that the reflected light is effectively returned to the portion of the backlight that is located below the transmission area. Therefore, unlike conventional transmissive liquid crystal display devices, it can be more practical -46- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 1240098 A7 ___________B7 V. Description of the invention (43) Use light more efficiently than expected. (Embodiment 9) FIG. 25 is a partial cross-sectional view of a transmissive / reflective liquid crystal display device 100 according to Embodiment 9 of the present invention. Referring to FIG. 25, the liquid crystal display device i 〇〇 includes the active array substrate 70 (corresponding to F f-F ′ section) shown in FIG. 18, a counter substrate (color filter substrate μ 6 〇), and a space therebetween. The liquid crystal layer 1 40. The transmissive / reflective active array substrate 70 includes a plurality of gate bus lines 72 as scan lines, and a plurality of source bus lines 74 as signal lines. Insulating glass substrates 6 丨 are mutually fathered. In each rectangular area surrounded by adjacent gate busbars 7 2 and adjacent source busbars 74, placed by a material with high light transmission efficiency The manufactured transmissive electrode 68 and the reflective electrode 69 made of a highly reflective material. The transmissive electrode 68 and the reflective electrode 69 constitute a pixel electrode. The pair of substrates (color filter substrates) 1 6 0 includes A color filter layer 164 formed on an insulating glass substrate 丨 62 and a transparent electrode 166 made of indium tin oxide and other materials are sequentially formed on the surfaces of the substrates 70 and 60 that face the liquid crystal layer 14 0. Alignment film (not yet). In order to define the orientation of liquid crystal molecules oriented by an electric field, the vertical Positive film based friction in one direction, to provide a pre elevation to the liquid crystal molecules The liquid crystal layer 140 using a nematic liquid crystal material having a negative anisotropy of the dielectric (e.g.

(MJ manufactured by Merck &amp; Co., Inc.). Each pixel of the smallest display unit of the liquid crystal display device 100 includes a reflective region 120 defined by a reflective electrode 69 and a transmissive region 120T defined by a transmissive electrode 68. The thickness of the liquid crystal layer 140 is dr in the reflective region 120R, and the transparent-47- This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 public directors) 1240098 A7 B7 V. Description of the invention (44 1 2 0T is dt (dt = 2dr), and the optical paths of the light beams used for display (the reflected light beam in the reflection area and the transmitted light beam in the transmission area) are substantially equal to each other. Although dr = 2 dt is more than Dt and dr can be appropriately determined according to the display characteristics, the prerequisite is dt &gt; dr. Dr-generally about 4 to about 6 microns, and dr is about 2 to about 3 microns. In other words, the active Steps of about 2 to about 3 microns are formed in each pixel region of the array substrate 70. When the reflective electrode 69 has a concave and convex shape surface as shown in FIG. 25, the average thickness should be dr. This In this case, the transmissive / reflective liquid crystal display device 100 includes two types of regions (reflective region and transmissive region), in which the thickness of the liquid crystal layer 14 is different from each other. In this embodiment, the active array substrate 70 includes the reflective region 12 〇R and transmission area 12 0T, the height of the side facing the liquid crystal layer 14 〇 Distinctly manufactured a liquid crystal display device (diagonal: 8.4 inches) with the structure shown in FIG. 25, and performed 64 grayscale display to evaluate the display characteristics (transmittance and reflectivity) of the device. Evaluation The results are shown in FIGS. 2 to 6. The liquid crystal display device was manufactured under the following conditions. The area of the transmissive region i 2 ττ in a pixel is 12 R with a ratio of 4: 6. The transmissive electrode 6 8 series It is made of indium tin oxide, and the reflective electrode is made of A1. The thickness dt of the liquid crystal layer 1 40 in the transmissive region 120 is set to about 5.5 micrometers, and the liquid crystal in the reflective region 2 0R The thickness of the layer 140 is set to about 3 microns. The transmittance of the liquid crystal display device using the light from the backlight in transmission mode is measured using tMB_5 manufactured by Topcon Co., and the liquid crystal display device uses ambient light in reflection mode. Reflectivity uses 〇tsuka

LCD-5〇〇〇 manufactured by Elecu〇nlcs Co., Ltd. uses an integrating sphere to measure the '48 -t paper size. Applicable to China National Standard (CNS) A4 specifications (210 X 297 ^ * ^ ------ 1240098) A7 B7 V. Description of the invention (45 as shown in Figure 26, π, the changes in reflectivity and light transmittance in the gray scale display of 64 (individually, the lines and dashed lines in Figure 26) substantially coincide with each other. Therefore, even when the transmission mode display using the light from the backlight and the reflection mode display using the ambient light are used at the same time, a gray scale display with sufficient display quality can still be obtained. The contrast between the transmission mode and the reflection mode is about 2 〇〇 and about 25 ° The evaluation results of color reproducibility will be described below. Figures 2 7 and 28 are conventional transmission type liquid crystal display devices and the transmissive / reflective type liquid crystal display devices of this embodiment under ambient light of different brightness. Chromaticity diagram. These liquid crystal display devices all use the same backlight. As shown in Figure 27, when the ambient light on the display screen's illuminance increases from 01 X to 8, 0 0 0 1 X and to 17, 0 0 When 0 1 x, the color reproducibility range of conventional liquid crystal display devices ( The triangular area in Figure 2) is greatly reduced. Observers can find that the colors are blurred. However, in a transmissive / reflective liquid crystal display device, as shown in Figure 28, the color reproduction of the illumination intensity 8, 0 0 0 0 1 x The property is basically the same as that of an illuminance of 0.1 1 X. In addition, when the illuminance is 17,000 0 1 X, the color reproducibility is only slightly reduced. Therefore, there is almost no color blur. For conventional transmission In a liquid crystal display device of the type, the contrast is reduced because of the reflection of ambient light from the surface of the display panel and the reflection of light from a black mask, a contact, etc. used to block light. On the contrary, the transmissive type in this embodiment / In the reflection type liquid crystal display device, in addition to the transmission mode display, a reflection mode display using ambient light is provided. Therefore, the reflection mode display can be suppressed to the transmission mode. -49- This paper standard applies to China National Standard (CNS) A4 (210X297) Mm) 1240098 A7 ________B7 V. Description of the invention (46) The contrast due to the reflection of ambient light in the type display is reduced. Therefore, no matter how bright the ambient light becomes, the liquid crystal display device of this embodiment The contrast is not lower than that obtained by using only a reflective mode display. As a result, in the transmissive / reflective liquid crystal display device of this embodiment, the color reproducibility does not decrease even under bright ambient light, so it can be used at any level. A display with high visibility is obtained under the conditions. Fig. 29 shows another specific example of the structure of this embodiment, in which the reflective electrode region 1 60R includes a reflective layer (reflective plate) 69 and a part of the transmissive electrode 1 6 8. Fig. 2 5 The structure shown differs in that its reflective electrode area 20R includes reflective electrodes 69 having reflective characteristics. The thickness of the reflective electrode region 160R of the active array substrate can be controlled by adjusting the thickness of the reflective layer 169 and / or the insulating layer 170 on the reflective layer 169. (Embodiment 10) FIG. 30 is a plan view of an active array substrate of a liquid crystal display device according to an embodiment of the present invention. Fig. 31 is a sectional view taken along line G-G in Fig. 30. Referring to FIGS. 3 0 and 3 1 ′, a plurality of gate lines 2 02 and a plurality of source lines 2 03 are formed on a transparent insulating substrate 2 01 made of glass or plastic so as to cross each other. The areas surrounded by the adjacent gate line 202 and the adjacent source line 2003 are bounded by one pixel. The thin film transistor 204 is located at the gate line 202 and the source line 2 03 (near each parent point. The drain electrode 250 of each thin film transistor 204 is connected to the corresponding pixel electrode 206. Each The portion of the pixel used to form the pixel electrode 206 is viewed from the top and includes two regions, namely, a region with high transmission efficiency τ and a region with high reflection efficiency. In this embodiment, the indium tin oxide layer 207 constitutes an area -50- This paper is standard-size, tear-proof and duplicated) ------- 1240098 A7

The top layer of T4 is used as a layer with high transmission efficiency, and the magic layer (or A) alloy layer is a top layer that constitutes a region as a layer with high reflection efficiency. This layer 2 07 and 208 constitute the graph of each pixel + φ. γ-oralin% pole 206. The pixel electrode 206 overlaps the gate line 2 0 2 a of the adjacent pixel in the rear foot via the gate insulating film 2 0 9. During the driving period, a storage capacitor for driving the liquid crystal is formed at the F-blade F-blade F knife. The thin moon Wu electric crystal 2 04 sequentially includes the gate electrode 202 (the 2 () 2a in this case) branching as the source / non-corresponding self-corresponding gate electrode, the gate insulating film 209, The semiconductor layer 2 12 and the channel protection layer 213. Although not explicitly stated, the formed active array substrate has an alignment film, the connection is provided with a transparent electrode, and the upper layer has an alignment substrate with an alignment film. The liquid crystal is injected into the space between the two sealing substrates, and the backlight is placed on the rear side of the formed structure to form the liquid crystal display device of this embodiment. A mixture of a guest-host liquid crystal material zLI23 2 7 (Merck & C 〇., Manufactured by I nc) containing a black pigment and 0.5% optically active substance s_8 丨 丨 (Merck &amp; Co., Inc.) As a liquid crystal. An electronically controlled birefringence (ECB) mode can also be used as the liquid crystal mode, with polarizing plates placed on the top and bottom surfaces of the liquid crystal layer. When color display is required, a color filter (called a CF layer) including red, green and blue color layers is placed on top of the liquid crystal layer. The method of manufacturing the active array substrate according to this embodiment will be described below in private. First, a gate line 202 and a gate 2 10 manufactured by Ta are formed on an insulating substrate 201, and a gate insulating film 209 is formed on the integrally formed substrate. After that, a semiconductor layer 2 1 2 and a channel protection layer 2 1 3-51 are formed on each gate 2 10-This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1240098

After that, an n + _ s i layer is formed as the source electrode 2 1 1 and as the drain electrode 2 05 (or 2 u). An indium tin oxide layer 203a (bottom layer) and a metal layer 203b (top layer) are sequentially formed by sputtering and manufacturing a wiring pattern to form a source line 203. In this embodiment, D i is used as the metal layer 203b. The advantage of the double-layer structure of the source line 203 is that even if the metal layer 203b constituting each source line 203 is partially defective, the indium tin oxide layer 203a can maintain the electric power of the source line 203. This reduces the possibility of the source line being disconnected. The indium tin oxide layer 207 having a high light transmission efficiency in the τ region is formed of the same material in the same step as that of the hafnium tin oxide layer 2033 forming the source line 20 03. The R region having a high reflection efficiency is sequentially formed by forming a wiring pattern by forming a Mo layer 214 and an A1 layer 208. The A1 layer 208 can provide a sufficiently stable reflection efficiency (about 90%) at a thickness of about 150 nm or more. In this embodiment, the thickness of the A1 layer 20 8 is 150 nm, so that ambient light is effectively reflected. Ag, Ta, W, etc. can also be used in place of the alloys 八 and ^ for highly reflective layers (A1 layer 208). In this embodiment, the indium tin oxide layer 207 and the A1 layer 208 are used as the pixel electrode 206 in each pixel. Or, a magic or magic alloy layer having different thicknesses may be formed to individually define a region with high light transmission efficiency and a region with high reflection efficiency as regions T and R. This makes the manufacturing method simpler than the method using different materials. Further, the high reflection efficiency layer (the magic layer in this embodiment) of the R region can be made of the same material as the metal layer 2 0 3 b used for the source line 2 0 3. The liquid of this embodiment is allowed to be manufactured by a method for manufacturing a conventional transmissive liquid crystal display device. -52- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 1240098.

As described in Article 4, each pixel electrode 206 includes a high transmission efficiency region T and a high transmission efficiency region R. With this structure, it is possible to obtain a liquid crystal display device which, in comparison with a conventional liquid crystal display device using a semi-transmissive reflective film, more effectively uses% ambient light and irradiated light for transmission / reflection mode display. An oxidation of the pixel electrode 206 is formed on the entire area of each pixel foot and on the adjacent pixel gate line 2 0 2 a in the subsequent pixel row through a gate insulating film 2 0 9 interposed therebetween. Indium tin layer 207. An 80 layer 20 8 is formed on the indium tin oxide layer 207 through the Mo layer 2 丄 4 sandwiched therebetween, so as to form a region R in the center of the island-like pixel. According to this method, since the indium tin oxide layer 207 and the A1 layer 208 are electrically connected to each other, the regions τ and r apply the same voltage received from the same thin-film transistor 204 to the liquid crystal. Therefore, conversion lines are prevented from being generated due to changes in the orientation of liquid crystal molecules in a single pixel during a voltage application. The interposition of the Mo layer 214 between the hafnium tin oxide layer 207 and the A1 layer 208 can prevent the indium tin oxide layer 207 and the A1 layer from contacting with each other through the electrolytic solution during the manufacturing process, thereby causing electrical corrosion. In this embodiment, a good display characteristic is obtained by setting the ratio of the area of the T area to the area of the R area to 60..40. The area ratio is not limited to this value, but may be appropriately changed according to the transmission / reflection efficiency of the T and R regions and the purpose of the device. In this embodiment, the area of the R region is about 10 to about 10 to the effective pixel area. About 90% is better (that is, the total area of T area and R area). If the percentage is less than about 10%, that is, the area with high transmission efficiency accounts for a large part of the pixel, then the paper size -53- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 1240098

^ The problem between conventional transmissive liquid crystal display devices is that the display becomes fuzzy when the environment becomes #. Conversely, if the percentage of R region exceeds about ~. The problem arises when the ambient light is too dim to view the display using only ambient light. That is, P P makes 10,000; 涊 ~ In the case of back-illuminating, the occupancy rate of the T area is still as low as the display formed by the method of identification. In particular, when the liquid crystal display device is applied to a device mainly used outdoors, the battery life is important, and the device should be designed to fully utilize ambient light to reduce consumption. Therefore, the area of the R region with high reflection efficiency is preferably about 4 () to about 9 ()% of the effective pixel area. When the area of the ruler area is about 40%, only the reflection mode is sufficient to display the environment limit. The time required for the light from the backlight becomes longer. This condition shortens the battery life. On the other hand, when the liquid crystal display device is applied to a device mainly used outdoors, the 1¾ device should be designed to effectively use the light from the backlight. Therefore, the area of the R region is preferably about 60% of about 10 sides of the effective pixel area. When the area occupancy of the ruler area exceeds 60%, the τ area used to penetrate the light from the backlight becomes too small. To compensate for this phenomenon, the brightness of the back light needs to be substantially increased as compared to, for example, a transmissive liquid crystal display device. This increases energy consumption and reduces the efficiency of subsequent light utilization by the device. The liquid crystal display device of this embodiment is actually incorporated in a battery-driven camera. As a result, by adjusting the brightness of the backlight, the display remains bright and recognizable regardless of the brightness of the ambient light. In particular, when the device is used outdoors in a good atmosphere, it is not necessary to turn on the backlight, so the energy consumption is reduced. Because -54- This paper size applies Chinese National Standard (CNS) A4 (2l0x 297 mm) 1240098 A7 B7 V. Description of the invention (S1) This is compared with a device using only a transmissive liquid crystal display device. Battery life has increased dramatically. (Embodiment 1 1) Fig. 32 is a plan view of the center of an active array substrate of a liquid crystal display device according to Embodiment 1 of the present invention. FIG. 33 is a cross-sectional view taken along line H_H of FIG. 32. In this embodiment, the portion of each pixel to be formed into a pixel electrode is divided into two parts at the center when viewed from above, namely, a τ region with high transmission efficiency and an R region with high reflection efficiency. Identical components are denoted by the same reference numbers as those used in Figures 3 0 and 3 of the embodiment. The pixel, the thin film transistor structure, and the manufacturing method of the device are substantially the same as those described in Embodiment 10. Referring to FIGS. 32 and 33, a hafnium tin oxide layer 207 is formed in a range from the central portion of each pixel to the vicinity of the corresponding gate line 202, and is partially connected to the drain electrode 2 of the thin film transistor 204. . The eighth layer with high reflection efficiency overlaps the indium tin oxide layer 207 through the Mo layer 214 located in the center of the pixel. The magic layer 2 0 8 extends on the side of the pixel opposite to the indium tin oxide layer 2 07 area, passes through the gate insulating film 2 0 9 and the question line 2 0 for adjacent pixels located in the subsequent pixel row. 2 a overlaps. Since the indium tin oxide layer 207 and the A1 layer are electrically connected via the μ 0 layer 2 1 4, the electric corrosion caused by the contact between the indium tin oxide layer 207 and the A1 layer 208 is suppressed. The phantom layer 2 0 8 is the overlap between the R region and the gate line 2 2 a and adjacent pixels through the insulating film 2 0 9. This weight forms a storage capacitor during the driving of the liquid crystal, and the overlapping portion of the R area is also used for display. This makes the effective area of the pixels more than the conventional structure. -55- This paper size applies to the Chinese National Standard (CNS) A4 size (210x297 mm) 1240098.

A substantial increase. In order to further increase the pixel-to-hole ratio of the pixel, a high reflection efficiency film such as an eight-layer layer can be formed on the thin-film transistor 204 or the source line 20 through an insulating film as part of the pixel electrode 2 06 (It is electrically connected to the drain 205). However, under this condition, the thickness, material, and pattern design of this insulating film should be appropriately determined ^ 'so that the image quality is reduced due to the I parasitic capacitance generated between the pixel electrode 2Q6 and the source line 2 () 3 The situation is minimized. (Embodiment 1 2) Fig. 34 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment 12 of the present invention. Fig. 35 is a sectional view taken along the line I-1 in Fig. 34. This embodiment is different from Embodiment 11 in that a common line 2 1 5 is formed under the region R of the retroreflective efficiency through the gate insulating film 209. In FIGS. 30 to 33 of Embodiments 10 and 11, the same components are denoted by the same reference numerals. The method of manufacturing the pixel, the thin film transistor structure, and the device is substantially the same as that described in Embodiments 10 and 11. Referring to FIGS. 34 and 35, the indium tin oxide layer 207 is formed in which each pixel is located on the center portion to the edge portion of the corresponding gate line 202, and is connected to the drain electrode 205 of the thin film transistor 204. The a 1 layer 208 having a high reflection efficiency overlaps with the indium tin oxide layer 207 via a Mo layer located in the center portion of the pixel. The eight layer 208 extends on the side of the pixel opposite to the area of the indium tin oxide layer 207, and passes through the gate insulating film 209 and the common line 2 located in the subsequent pixel row for adjacent pixels. 1 5 overlap. Since the indium tin oxide layer 207 and the A 1 layer are electrically connected through the MO layer 2 14, the electric corrosion caused by the contact between the indium tin oxide layer 207 and the A1 layer 208 is suppressed. a 1 Lu -56- This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm) 1240098

2008, that is, the R region and the common line 21-5 are overlapped via the insulating film 209, and a storage capacitor is formed during the driving of the liquid crystal to improve the display. The opening of this storage capacitor does not reduce the mirror-to-hole ratio. In order to further increase the pixel hole ratio of the pixel, a high reflection efficiency film such as a layer 2 08 may be formed on the thin film transistor 204 or the source line 230 through an insulating film as the pixel electrode 20 Part 6 (which is electrically connected to the drain electrode 205). However, in this case, the thickness and material of the insulating film should be appropriately determined so that the image quality does not cause parasitic capacitance between the pixel electrode 206 and the thin film transistor 204 or the source line 203. For example, after the hafnium tin oxide layer is formed, an organic insulating film having a dielectric constant of about 3 · 6 is formed on the entire surface of the formed substrate, and the thickness is as high as about 3 microns. After that, eight layers can be formed in each pixel to overlap the thin film transistor 204 or the source line 203, and are electrically connected to the drain electrode 205. Such electrical connection can be achieved by forming a contact hole in the drain electrode 205 or the indium tin oxide layer 207. In this embodiment, the portion of each pixel that is to form the pixel electrode 206 is divided into two regions, that is, a region with high light transmission efficiency (T region) and a region with high reflection efficiency (foot region). Or the S trowel can be in two or more areas. For example, as shown in FIG. 36, the pixel electrode 2006 can be divided into two regions, namely, a high transmission efficiency τ region, a high reflection efficiency R region, and a C having a transmission or reflection efficiency different from the other two regions. Area. (Embodiment 1 3) FIG. 37 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment i 3 of the present invention. Figures 38A to 38D are obtained along the line J-J in Figure 37. -57- This paper size applies the Chinese National Standard (CNS) A4 specification (21 × X 297).

Binding

Line 1240098 A7 __—__ B7 V. Description of Invention (54) Sectional view 'illustrates a method for manufacturing the liquid crystal display device of this embodiment. In this embodiment, the R region with high reflection efficiency is made of the same material as the source line. In Figs. 30 to 36 in Embodiments 10 to 12, the same components are denoted by the same reference numerals. The pixel, the thin film transistor structure, and the manufacturing method of the device are substantially the same as those described in Examples 10 to 12, unless otherwise stated. In this embodiment, each of the pixels includes a high transmission efficiency T region located at the center portion thereof and an R region surrounding the T region. The outer contour of the R region is a square shape following two gate lines and two source lines. The R region includes a layer with high reflection efficiency, and is made of the same material as the source line to obtain high reflection efficiency. A method of manufacturing the liquid crystal display device will be described with reference to FIGS. 38A to 38D. Referring to FIG. 3 A, gate lines 2 0 2 (see FIG. 3 7) and interrogators 2 1 0, gate insulating films 2 0 9 and semiconductor layers 2 1 are sequentially deposited on the insulating substrate 2 0 1 by sputtering. 2. Channel protection layer 2 1 3, and the η +-S i layer 2 1 1 which is to be used as the source 2 1 1 and the drain 2 05 (or 2 1 1). Thereafter, a conductive film 241 used for the source line 203 (see FIG. 37) is deposited on the formed substrate by sputtering. Referring to FIG. 3B, the conductive film 2 4 1 is used to form a wiring pattern to form a layer 2 4 2 with high reflection efficiency, a drain-to-pixel connection layer 2 4 3, and a source line 2 0 3. The high reflection efficiency region of this layer 2 4 2 corresponds to the R region. Referring to FIG. 3C, an interlayer insulating film 2 4 4 is formed on the formed substrate, and then a contact hole 2 4 5 is formed through the interlayer insulating film 2 4 4. Referring to FIG. 3D, a hafnium transmission efficiency layer 246 made of indium tin oxide is formed on the entire area of each pixel. The high transmission efficiency layer 246 may be made of any other high transmission efficiency material. The high transmission efficiency layer 2 4 6 passes through the middle -58- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 1240098

The contact hole 245 of the layer insulating film 244 is connected to the connection layer 243, and is electrically connected to the corresponding terminal 205. The high transmission efficiency layer 246 also functions as a pixel electrode that supplies a voltage to the liquid crystal layer, so that the voltage is provided to the portion of the liquid second layer corresponding to the T and R regions through the high transmission efficiency layer 246. Because of this, in this embodiment, each pixel electrode system includes only a high transmission efficiency layer 246, and does not include a high transmission efficiency T region and a high reflection efficiency R region. The structure is superior to that of a transmissive liquid crystal display device. The process is such that a high reflection efficiency region can be formed without increasing the number of program steps and the pixel electrode formation failure is minimized. (Embodiment 1 4) Fig. 39 is a liquid crystal display device according to Embodiment 14 of the present invention. Partial plan view of an active array substrate. FIGS. 40A to 40D are cross-sectional views taken along the line κ_κ of FIG. 39, illustrating a method of manufacturing the liquid crystal display device of this embodiment. In this embodiment, the area with high reflection efficiency is shown in FIG. 39 The shaded parts) are made of the same materials as those used for the gate lines. In Figures 30 to 38 in Examples 10 to 13, the same components are denoted by the same numbers. Unless otherwise stated, pixels, films, etc. The transistor structure and the manufacturing method of the device are substantially the same as those described in Embodiments 10 to 13. In this example, when viewed from the top, each pixel includes a T region located at its center and having high transmission efficiency. ,and The R region that essentially surrounds the τ region includes two connecting stripes. The outer contour of the R region is a square shape attached to the two gate lines and the two source lines. The R region includes the height of the same material as the gate line. The reflection efficiency layer, the reflection efficiency from the south to the south. Now, the manufacturing method of the liquid crystal display device will be described with reference to FIGS. 40A to 40D. -59- This paper size is applicable to China @ standard ((^ 3) M Mg (21〇x 297) ^ 5 * ~ 一 —! 24〇〇98 Description of the invention Referring to FIG. 4 A, a conductive film is formed on an insulating substrate 2 0. The conductive film is then patterned to form a gate electrode 2 1 0, a gate line. 2 0 2 (refer to FIG. 39), and a reflective efficiency layer 2 4 2. The high reflection efficiency layer 2 4 2 corresponds to the R region. Referring to FIG. 4 Β, a gate is sequentially deposited on the formed substrate by sputtering. Electrode insulation film 2 09, semiconductor layer 2 丨 2, channel protective layer 2 丨 3, and n + -Si layer 211 which is to be used as source electrode 2; and electrode 205 (or 211). Then, in the same steps The metal layer 2 03b and the drain-pixel electrode connection layer 243 are formed as a part of the source layer 20 03. The remote connection layer 243 and the electrode 205 of the thin film transistor 204 are partially heavy. Referring to FIG. 40C, hafnium tin oxide is deposited on the formed substrate by sputtering, and a hafnium pattern is formed to form a high transmission efficiency layer 2 4 6 and an indium tin oxide layer as part of the source line 2 03. 203a. A high transmission efficiency layer 246 is formed on the entire area of each pixel, and an indium tin oxide layer 203a 'is formed on the metal layer 203b to have the same pattern as the metal layer 203b. The high transmission efficiency layer 246 and The connection layers 2 4 3 to be electrically connected to the thin film transistors 2 0 4 are partially overlapped. Referring to FIG. 4 D, a passivation film 2 4 7 is formed and a wiring pattern is produced. Therefore, each pixel of the liquid crystal display device of this embodiment includes a τ region having a high transmission efficiency at a central portion thereof, and a high reflection efficiency r region that surrounds the τ region and is connected with two connection stripes of adjacent source lines. . In this case, because the indium tin oxide layer 2 03 a of the source line 2 03 and the material layer 242 having high reflection efficiency are located at different heights, the indium tin oxide layer 2 03 a and high reflection efficiency material of each pixel The gap of the layer 242 to prevent light leakage can be reduced, so that when the mirror hole of the pixel is formed in the T and R regions in the opposite case (that is, the high reflection efficiency layer is located in the figure-60)-This paper scale applies Chinese national standards CNS) A4 specification (21 × 297 mm) 1240098 A7 B7 5. The description of the invention (the central part of 57 pixels) is increased. In this embodiment, as in Example 13, each pixel electrode includes only one type of electrode (ie high Transmission efficiency layer 246). This structure is superior to the structure in which the pixel electrode includes two types of electrodes because the incidence of defects is reduced, and the device can be manufactured efficiently. In this embodiment, 'each source line 2 0 3 ^ D & G a man p &amp; white has a two-layer structure including a metal layer 2 0.3 b and an indium tin oxide layer 2 0 3 a. That is, today 1 is a layer with defects, and the source line 2 0 3 Still using the indium tin oxide layer 203 a 俣; ^. 7 years to maintain the electrical connection, and reduce the source line 203 break (Embodiment 15) FIG. 41 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment 5 of the present invention. FIGS. 42A to 42 (: are cross-sectional views taken along the line ^ [of FIG. 41 The method of manufacturing the liquid crystal display device of this embodiment will be described. In this embodiment, the pixel electrode is extended on the gate line and / or the source line via an insulating film to increase the effective pixel area (essentially as the area of the pixel). ). The same numbers are used for the same components in Examples 10 to 14. Unless otherwise stated, the pixel, thin film transistor structure, and manufacturing method of the device are substantially the same as those described in Examples 10 to 14. As shown in FIG. 41, in this embodiment, when viewed from above, each pixel includes a high transmission efficiency τ region located at the center thereof and a square R region formed by a strip surrounding the T region (FIG. The diagonal line area in 41). The pixel electrode including the high transmission efficiency layer overlaps the adjacent gate line 2 and source line 2 03 through the interlayer insulating film, and can be located on the gate line 202 and the liquid crystal layer. On Source Line 203 -61-This paper size applies National Standard (CNS) A4 (210 X 297 mm) 1240098 A7 B7 V. Description of the invention (58) Apply voltage. This confirms that the effective pixel area is larger than that of Examples 10 to 14. In this embodiment, the gate The epipolar line 202 and the source line 2 03 are in the R region as a high reflection efficiency layer. Refer to FIG. 4A and 4C to describe the manufacturing method of the far liquid crystal display device. Referring to FIG. 4A, Sputtering sequentially forms gate 2 丨 〇, gate line 2 〇2 (refer to Figure 41), gate insulating film 209, semiconductor layer 2 1 2, channel protection layer 2 J 3, and the source electrode 211 and the n + _ Si layer 211 of the drain electrode 2 05 (or 211). At least one of the gate line 202 and the source line 203 is intended to be overlapped with a transmissive layer as a pixel electrode in a subsequent step-preferably made of a material with high reflection efficiency. Referring to FIG. 42B, an interlayer insulating film 244 is formed on the formed substrate, and contact holes 2 4 5 are formed to penetrate through the interlayer insulating film 2 4 4. Referring to FIG. 4C, a high transmission efficiency material such as indium tin oxide is deposited on the formed substrate by sputtering, and a wiring pattern is formed to form a high transmission efficiency layer 2 4 6. The plutonium transmission efficiency layer 2 4 6 is connected to the connection layer 2 4 3 through the contact hole 2 4 5, and is sequentially connected to the drain electrode 2 05 of the thin film transistor 2 0 4. In this case, the high transmission efficiency layer 2 4 6 is patterned to overlap with at least one of the gate line 202 and the source line 203. With this structure, the gate line 202 and / or the source line 203 which overlap the high transmission efficiency layer 2 4 6 via the interlayer insulating film 2 4 4 can be used as a high reflection efficiency layer. The display device having the foregoing structure should be designed so as not to cause a decrease in image quality due to a capacitance generated between the high transmission efficiency layer 2 46 and the gate line 202 or the source line 203, such as a phenomenon of mooring. Therefore, in this embodiment, 'each pixel includes a high-62 at the center of the paper. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1240098 A7 ________ B7 V. Description of the invention (59 ) The T region of the transmission efficiency and the R region having a high reflection efficiency at positions corresponding to adjacent question lines and / or source lines. This eliminates the need to form other highly reflective layers and shortens the process. (Embodiment 1 6) FIG. 4 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment 6 of the present invention. Figs. 44A to 44F are other plan views taken along the line M_M in Fig. 43, and a method for manufacturing a liquid crystal display device according to this embodiment is explained. As shown in FIG. 43, each pixel of the liquid crystal display device of this embodiment includes a transmission efficiency T region located at the center of the south and a stripe located at the side of the τ region and includes two stripes attached to adjacent source lines 2 0 3 High reflection efficiency R region (the oblique part of Fig. 43). As shown in FIG. 44F, the R region includes any of the high ridge portions 253a and the low ridge portions 253b on the insulating substrate 201, and the polymer resin layer 2 5 on these ridge portions 253a and 2 5 3 b. 4. A south reflection efficiency layer 242 on the polymer resin layer 254. The formed layer 242 constitutes the surface layer of the R region, and has a continuous wave surface, which is electrically connected to the drain electrode 2 05 through the contact hole 2 4 5 and the bottom electrode (not shown). A method of manufacturing the liquid crystal display device will be described with reference to FIGS. 44A to 44F. Referring to FIG. 4 A, a plurality of gate lines 2 0 2 (see FIG. 4) are formed on the insulating substrate 2 0 1 and gates branched from the gate line 2 2 and manufactured from materials such as cr, Ta, and the like. Pole 2 10 ° A gate insulating film 2 0 9 made of si NX, Si OX, etc. is formed on the insulating substrate 2 01 to cover the gate line 2 02 and the gate 2 1 0 . Yuzha-63- This paper size applies Chinese National Standard (CNS) A4 specification (210X297 public director) 1240098 A7 B7 V. Description of the invention (60) The insulating film 2 0 9 is located on the part above the gate 2 1 0 A semiconductor layer 2 丨 2 made of materials such as amorphous stone (a-Si), polycrystalline silicon, and CdSe is formed. A channel protection layer 2 1 3 is formed on each semiconductor layer 2 1 2. A pair of contact layers 2 4 8 made of a-S i are formed on both sides of the channel protection layer and extend to the sides of the semiconductor layer 2 1 2. A source electrode 249 'made of Ti' Mo, A1 and other materials is formed on one contact layer 248, and a drain electrode 205 made of Ti, Mo, A1 and other materials is formed on the other contact layer 248. In this example, a glass plate having a thickness of 1.1 mm was used as the material of the insulating substrate 201 by Corning Inc. Referring to FIG. 4B, a conductive film is formed on the formed substrate by sputtering, and a wiring pattern is formed to form a metal layer 203b, which is also used as one of the source line 203 and the bottom electrode 2500. Each bottom layer 250 can partially cover a gate electrode 002 for use by an adjacent pixel in a subsequent pixel row through a gate insulating film 209, and form a storage capacitor therebetween. Each gate line 200 used to form a storage capacitor can overlap with a high reflection efficiency layer, or the reflection efficiency of the gate line 202 itself can be as high as a part of the pixel area (R area), and further increase the mirror Kong than. Referring to FIG. 44C, indium tin oxide is deposited on the formed substrate by sputtering, and a wiring pattern is formed to form an indium tin oxide layer 203a, which together with the metal layer 203b forms a source line 203. In this embodiment, each source line 203 has a double-layer structure including a metal layer 203b and an indium tin oxide layer 203a. The advantage of this double-layer structure is that even gold -64-

1240098 A7 B7 V. Description of the invention (61 Metal layer 2 0 3 b Partial defects, can still maintain the electrical connection of the source line 2 0 3 by the indium tin oxide layer 2 03a. This reduces the source line 2 0 3 disconnection Possibly. Simultaneously with the formation of the indium tin oxide layer 2 0 3 a, a layer pattern 2 4 6 with 咼 transmission efficiency is obtained by making a wiring pattern. At this time, it can be formed simultaneously with the source line 203 as The pixel electrode has a layer 246 having high transmission efficiency. Referring to FIG. 44D, a resist film 2 5 2 made of a photosensitive resin is formed, and a wiring pattern is formed, followed by heat treatment to passivate it, and then to the formed substrate. A high ridge portion 253a and a low ridge portion 253b having a substantially circular cross section are formed on a portion corresponding to the R region. It is preferable that the ridge portions 253a and 253b are not located on the high transmission efficiency layer 246 layer, so that the voltage can be effectively It is applied on the liquid crystal layer. However, even if the ridges 2 53 a and 2 5 3 b are located on the layer 246, as long as the ridges are transparent, there will be no significant optical effect. Referring to FIG. 44E, the ridges and convexes A polymer film 254 is formed on 2 5 3 a and 2 5 3 b. Using this film, the R region The depressed and raised surface can be made more continuous by reducing the number of planar portions. This step can be omitted by changing the manufacturing conditions. Referring to FIG. 44F, the polymer film 2 54 is predetermined by, for example, sputtering. A layer 2 42 made of 丨 丨 was formed on the part as a pixel electrode. Suitable materials for the high reflection efficiency layer 242 include A1 and A1 alloys, including Ta, Ni, Cr, and Ag with high reflection efficiency. The thickness of the high reflection efficiency layer 242 is preferably in the range of about 0.01 μm to about 1.0 μm.

Therefore, each pixel of the liquid crystal display device of this embodiment includes a transmission efficiency T region located at a central portion thereof, and a high reflection efficiency R -65 depending on an adjacent source line.-This paper uses China National Standard (CNS ) A4 size (210 X 297 mm) 1240098 A7 B7 V. Description of the invention (area 62. Use this structure 'because of the source line 2 0 3 indium tin oxide layer 2 0 3 a and high reflection efficiency layer 2 4 2 It is located at different heights, in contrast to the situation where the τ and R regions are formed (that is, the high reflection efficiency layer is located in the center of the pixel). The gap between the indium tin oxide layer 2 0 3 a and the high reflection efficiency layer 242 needs to prevent light leakage It can be reduced to increase the mirror hole ratio of the pixels. In this embodiment, the high reflection efficiency layer 2 4 2 has a smooth concave and convex shape surface so that the reflected light is scattered in a wide orientation. At the same time, a scattering plate is used. In this case, it is not necessary to use the resist film 2 5 2 to form the raised portions, and the surface of the high reflection efficiency layer 2 4 2 can be adjusted to a flat surface. In either case, the high reflection efficiency layer 242 and the high transmission efficiency layer 246 has a third substance in between (for example Grease and metals such as M o). Using this structure, in the specific case where the high transmission efficiency layer is made of indium tin oxide and the high reflection efficiency layer is made of A1 or A1 alloy, a 1 can be reduced. The wiring pattern is damaged due to the electric erosion that is easy to occur during the a11 worm-etching step. (Embodiment 1 7) Figure 4 5 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment 17 of the present invention. Figure 4 6 It is a cross-sectional view taken along the line N-N of Fig. 45. Referring to Figs. 45 and 46, the active array substrate includes a pixel electrode 206 having a matrix pattern and a gate line 202 for providing a scanning signal. And the source line 203 for providing a display signal crosses each other around the edge of the pixel electrode 206. The pixel electrode 206, the gate line 202, and the source line 203 are This edge overlaps through the middle layer insulation film 2 4 4. -66- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 1240098

The thin film transistor 204 is located at each of the parent points of the gate line 202 and the source line 203 to provide vertical switching of display signals on the corresponding pixel electrode 206. The gate electrode 210 of the thin film transistor 204 is connected to the corresponding gate line 202, and the thin film transistor 204 is driven by a signal input to the gate electrode 210. The source 249 of the thin-film transistor 204 is connected to the corresponding source line 203 to receive the data number. The drain electrode 205 of the thin film transistor 204 is electrically connected to the connection electrode 255, and is connected to the pixel electrode 206 through a contact hole 245. The connection electrode 2 5 5 forms a storage capacitor through the gate insulating film 209 and the common line 2 5. The common line 215 includes a metal film and is connected to a counter electrode on the counter substrate 2 56 through an interconnector (not shown). The common line 215 can be formed in the same step as the gate electrode 202 to shorten the manufacturing process. Each pixel electrode 206 includes a high reflection efficiency layer 242 made of A1 or A1 alloy, and a high transmission efficiency layer 246 made of hafnium tin oxide. When viewed from above, the pixel electrode 206 is divided into three regions, that is, two regions of high transmission efficiency and one region of two reflection efficiency (corresponding to the oblique portion of FIG. 45). The high reflection efficiency layer 242 may also include a high reflection efficiency conductive metal layer such as Ta as in the foregoing embodiment. Each R zone is designed to cover-part of the light-shielding electrodes and interconnecting lines such as the question line 2 0, the source line 2 0 3, the thin film transistor 2 0 4 and the common line 2 5 which do not allow light from the backlight The light is transmitted. With this structure, a portion of each pixel that cannot be used as a T region can be used as a high reflection efficiency region. Increase the mirror hole ratio of the pixel portion. The T region of each pixel portion is surrounded by the r region. -67- 1240098 A7 B7 V. Description of Invention (64)-Describes a method for manufacturing an active array having the aforementioned structure. First, a gate 2 10, a gate line 202, a common line 215, and an interlayer insulating film 209 are formed on a transparent insulating substrate 2 〇 丨 made of a material such as glass in order. A semiconductor layer 212 and a channel protective layer 2 13. Source 249 and drain 205. After that, a transparent conductive film and a metal film to form source lines 203 and connection electrodes 2 5 5 are deposited on the formed substrate by sputtering, and a wiring pattern is formed to have a predetermined shape. Therefore, each source line 203 has a double-layer structure including an indium tin oxide layer 203a and a metal layer 203b. The advantage of this double-layer structure is that the indium tin oxide layer 203a can maintain the electrical connection of the source line 203 even if the metal layer is defective. The possibility of disconnection of the source line 203 is reduced. After that, a photosensitive acrylic tree was applied to the formed substrate by a spin coating method to form an intermediate layer insulating film 2 44 having a thickness of about 3 microns. The malonate tree was exposed to light after 1k according to the desired pattern, and developed using an alkaline solution. The film was etched by the sample solution only after 4 minutes of exposure, and a contact hole was formed through the interlayer insulating film 2 4 4. Using alkali development, a perfect tapered contact hole 245 is obtained. The use of a photosensitive acrylic tree for the interlayer insulating film 2 4 4 is advantageous in terms of the following factors. Since spin coating can be used to form a thin film, it is fortunate to form a film as thin as a few microns. In addition, the intermediate layer insulating film 2 4 4 does not require a photoresist application step when producing a bulk pattern. In this known example, the acryl resin is originally colored, and can be made transparent by exposing the entire surface after the wiring is solidified. The hyaluronic acid resin can also be made transparent by chemical processing. -

X 297 mm) 1240098 A7 B7

After that, an indium tin oxide film is formed by using the wiring pattern and the wiring pattern to form a high transmission efficiency layer 246 of the pixel electrode 206. Therefore, the high transmission efficiency layer 246 constituting the pixel electrode 206 is electrically connected to the corresponding connection electrode 255 through the contact hole 245. The high transmission efficiency layer 242 made of A1 or A1 alloy is formed on the material layer 246 corresponding to the high transmission efficiency portion of the R region to cover the gate line 202, the source line 2 0, and the thin film transistor 204. , And common line 215. The two material layers 242 and 246 are electrically connected to each other to form a pixel electrode 206. Any adjacent pixel electrodes 206 are individually located on the portions above the question line 202 and the source line, and are not electrically connected to each other. As shown in FIG. 46, the manufactured active array substrate is bonded to the substrate, and liquid crystal is injected into the space between the substrates to complete the liquid crystal display device of this embodiment. As mentioned above, the liquid crystal display device of this embodiment includes a high reflection efficiency layer 242, which is located on the thin film transistor 204, the gate line 202, and the source line 203 to form a pixel electrode. 206 &lt; R region. This eliminates the necessity of providing a light-shielding film to prevent light from entering the thin-film transistor 204 and to shield a part of the pixel electrode 20 on the gate line 20, the source line 2 03, and the common line 2 15. In these parts, the functional display area and the conversion line form (light leakage are generated in the easy-to-display area. As a result, the area that cannot be used as the display area traditionally because it is shielded by the light shielding film can be reused as the display area. This can effectively use the display area. When the gate line and the source line include a metal film, it shields the conventional transmission liquid -69-This paper size is applicable to the Chinese National Standard (CMS) A4 specification (210 X 297 male directors) 1240098 A7 ------- --------- B7 V. Description of the invention (6 ^^ 一 ~ ——----- The crystal display device "because of the light from the backlight, so it cannot be used as a display area. However, in this embodiment, The T region with high transmission efficiency is formed at the center of each pixel (this embodiment is two separate parts). The high reflection efficiency is formed around the stripe shape of the τ region. That is, the r region with high reflection efficiency covers the interlayer Lines, = polar lines, common lines, and switching elements, and are used as the reflective electrode area of each pixel electrode. This structure makes the mirror hole of the pixel electrode the opposite pattern (ie, where the T area surrounds the R area Pattern) increase. &Quot; Or the R region of each pixel can be formed as shown in Figure 47 (Slanted part), including the connecting poles 2 5 5. This suppresses the brightness of light penetrating the τ region. (Embodiment 18) In the foregoing embodiment, the present invention is applied to an active matrix liquid crystal display device. The invention can also be applied to a simple matrix type liquid crystal display device. The basic structure of a pair of row electrodes (signal electrodes) and column electrodes (scan electrodes) facing each other will be described below. In a simple matrix type liquid crystal display device, the pair The area where the row electrode and the column electrode cross each other is defined as a pixel. Figs. 48A to 48C show examples of the pixel area. Referring to Fig. 48A, a transmissive electrode region is formed in a center portion of a row electrode in a pixel region, and Reflective electrode areas are formed in the remaining edge portions. The structure of the row electrode can be the same as that in Figure 4 8B or 48C. The height of the reflective electrode area can be adjusted by forming an interlayer insulating film between the reflective electrode and the transmissive electrode. As shown in Fig. 4 8 C. Or as shown in Fig. 4 9 A 'the reflective electrode region may be formed in the central portion of the row electrode in a pixel region, and the transmissive electrode region is formed in the remaining edge portion. The row The structure of the pole is shown in Figure 49B or 49C. The height of the reflective electrode area -70- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 1240098 A7 B7 V. Description of the invention (67) The degree can be adjusted by forming an interlayer insulating film between the reflective plate and the transmissive electrode 'as shown in Figure 4 9 C. Or as shown in Figures 5 A, 50 B, and 50 C, the row of electrodes may have Strip-shaped reflective electrode region. The strip-shaped reflective electrode region may be formed along one side of the row electrode, as shown in Figs. 50A to 50C, or along its center, as shown in Figs. 51A and 51B. The liquid crystal of the present invention will be described below. The display device is different from the conventional reflective or transmissive liquid crystal display device. In a conventional reflective liquid crystal display device, the display is performed using ambient light to reduce energy consumption. Therefore, when the ambient light is lower than a certain limit value, the display cannot be recognized even if the device is used in an environment that can provide sufficient energy. This is the biggest disadvantage of the reflective liquid crystal display device. If the reflection characteristics of the reflective electrode are changed during manufacture, the ambient light utilization efficiency of the reflective electrode is also changed. This changes the threshold value of the unrecognizable ambient light intensity according to the panel change display. Therefore, the change of the reflection characteristics at the time of manufacture needs to be more carefully controlled than that of the conventional transmission type liquid crystal display device when the mirror aperture is controlled. Otherwise, a liquid crystal display device having stable display characteristics cannot be obtained. On the contrary, in the liquid crystal display device of the present invention, the light from the backlight is used in an environment that can provide sufficient electric power like a conventional transmissive liquid crystal display device. Therefore, the display can be recognized regardless of the ambient light. Therefore, changes in the utilization efficiency of ambient light due to changes in reflection characteristics do not need to be strictly controlled as in reflective liquid crystal display devices. On the other hand, in a conventional transmissive liquid crystal display device, when the ambient light becomes bright 71-this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1240098 A7 _____B7 V. Description of the invention (68) 'The surface reflection component of the light increases, making it difficult to recognize the display. In the liquid crystal display device of the present invention, the reflection region is used together with the transmission region. This increases panel brightness and improves visibility. Therefore, the liquid crystal display device of the present invention can simultaneously overcome the problems of reduced visibility due to surface reflection in conventional (transparent) liquid crystal display devices under high (ie, bright) ambient light, and low (i.e., dark) environments in conventional reflective liquid crystal display devices. The problem of display recognition is difficult due to the reduction of the panel degree in the light. In addition to the foregoing, the characteristics of these devices can be obtained at the same time. As described above, according to the present invention, compared with the case of using a semi-transmissive reflective film, each pixel includes a region having a higher transmission efficiency and a region having a higher reflection efficiency (region. In each region, a high transmission efficiency is used. Layer or a high reflection efficiency layer as a pixel electrode. With this structure, unlike conventional liquid crystal display devices using a semi-transmissive reflective film, the use efficiency of% ambient light and irradiated light is prevented from being lowered due to, for example, astigmatism. Using reflection mode display, transmission mode display 7F, or both reflection mode display and transmission mode display TF, can display a good image regardless of the% ambient light brightness. Because two kinds of light from posterior, light and ambient light can At the same time, it is effectively used for display, so the volume consumption is much lower than a transmissive liquid crystal display device that always uses light from the backlight. In other words, the present invention can overcome the conventional reflective liquid crystal display device by increasing the light utilization efficiency. The disadvantages are that the visibility is greatly reduced under low ambient light and the conventional transmissive liquid crystal display device is difficult to recognize the display under high ambient light. Because the area with high reflection efficiency partially covers the gate line, source line, and / or -72- This paper size applies to China National Standard (CNS) A4 specification (21〇 X 297 mm) 1240098 A7

V. Description of the invention Switching elements, so the light emitted by people on these parts can be displayed. Therefore, the effective area of pixels is greatly increased. This not only overcomes the problem of conventional devices using a transflective reflective version, but also increases the mirror holes &amp; of each pixel, even when compared with a general transmissive liquid crystal display device. If there is only a high-transmission-efficiency layer for forming a pixel electrode, the case where the high-transmission-efficiency layer and the high-reflection-efficiency layer are electrically connected to form a pixel electrode of a pixel, and the medium-high-transmission-efficiency layer and the high Compared with the case where the reflective efficiency layers partially overlap each other to form a pixel electrode of a pixel, the possibility of defects caused by the pixel electrode can be reduced. The high transmission efficiency layer or the high reflection efficiency layer may be made of the same material as the source line or the interpolar line. This simplifies the manufacturing process of the liquid crystal display device. The area of the high reflection efficiency region in the effective pixel region is set to occupy about 10 to about 90%. This setting also overcomes the problems that the conventional transmissive liquid crystal display device becomes less readable when the ambient light is too bright, and the conventional reflective liquid crystal display device becomes completely unrecognizable when the ambient light intensity is too low. Therefore, regardless of the amount of ambient light, you can use the reflection mode display, transmission mode display, or both reflection mode transmission and transmission mode display to get the best display. The reflective / transmissive liquid crystal display device of the present invention is particularly effective when applied to a device in which the display screen swings or cannot be moved to a better environment that is more convenient for an operator to use. The liquid crystal display device of the present invention is actually used as a camera (detector screen) in a battery-driven digital camera or video camera. As a result, it was found that regardless of the degree of environmental partyness, the brightness of the back light can be adjusted to maintain a suitable viewing quality. -73- This paper size is applicable to China National Standard (CNS) A4 (210X 297 mm) 1240098 A7 7. Description of the invention (70) Brightness while keeping energy consumption low. When the conventional transmission type liquid crystal display device is used outdoors in bright sunlight, even if the backlight intensity increases, it becomes less readable. In this case, the liquid crystal display device of the present invention can be used as a reflection type liquid crystal display device by turning off the backlight, or it can be used as a transmission / reflection type device by reducing the brightness of the backlight. As a result, it is possible to obtain good display quality and reduce energy consumption. * When the liquid crystal display device of the present invention is used indoors where bright sunlight is incident, the reflection mode display and transmission mode display can be switched according to the orientation of the target object or both can be used at the same time to obtain a more easily identifiable display. When detecting direct sunlight, outdoor conditions with bright sunlight can be used. When the child object is imaged in a dark corner of the room, the backlight is turned on to display the child device as a reflection / transmission mode. When the liquid crystal display device of the present invention is used as a detection screen in an on-vehicle device, such as an on-board navigator, a truly recognizable display is obtained regardless of the brightness of the ambient light. In the car navigator using a conventional liquid crystal display device, the brightness is higher than that used for personal computers and other objects, and it can be used in good weather and in direct sunlight. However, despite this high brightness, the display is still less readable in the aforementioned soil environment. On the other hand, having such a high brightness causes the user to be dazzled due to too much illumination, which has a negative effect. In the car navigator using the liquid crystal display device of the present invention, the reflection mode display is always used together with the transmission mode display. This can be well displayed in bright surroundings without increasing the brightness of the backlight. Conversely, in extremely dark environments, the paper size can be adapted to the Chinese National Standard (CNS) A4 specification (21 × 297 mm) by only -74-. This paper standard has a low brightness (71) (About 50 to 100 cd / m2) and then obtain a discernible display by illuminating the light. Those skilled in the art can understand various other improvements without departing from the scope and spirit of the present invention. Therefore, the scope of patent application is not limited to the foregoing description, but is the scope of patent application in a broad sense. Description of component symbols 1 Pixel electrode 66 Analog glass 2 Gate line 67 Ultraviolet curable adhesive 3 Source line 68 Transmission electrode 4 Thin film transistors (TFTs) 69 Reflective electrode 5 Connection electrode 70 Active array substrate 6 Contact hole 71 Thin film Transistor (TFT) 7 Gate insulation film 72 Gate bus bar 8 Storage capacitor electrode 73 Gate electrode 9 pair of substrates 74 · Source bus bar 10 pair of electrodes 75 Source electrode 11 Transparent insulating substrate 76 Drain electrode 12 Gate 77 Semiconductor layer 13 Semiconductor layer 78 Contact layer 14 Channel protection layer 79 Contact hole 15 Source electrode 80 ITO layer -75- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 1240098 A7 B7 V. Description of the invention (72) 16 Drain 81 Metal layer 17 Transparent conductive film 81a Bottom electrode 18 Metal film 90 Polarizing plate 19 Interlayer insulating film 91 Backlight 20 Transmissive electrode area 100 Transmissive / reflective liquid crystal display device 21 Transparent Conductive film 120T Transmissive area 22 Reflective electrode area 120R Reflective area 23 Metal film 140 Liquid crystal layer 24 Two-color pigment molecules 160 Pair substrate (color filter Substrate) 25 Liquid crystal molecules 160T Transmissive electrode area 30a Polarizer 160R Reflective electrode area 30b Polarizer 162 Insulating glass substrate 31 Phase plate 164 Color filter layer 32 Transparent substrate 166 Transparent electrode 33 Black mask 168 Transmissive electrode 34 Counter electrode 169 Reflective layer 35 Alignment film 170 Insulating layer 36 Liquid crystal layer 201 Transparent insulating substrate 37 Metal-insulator-metal (MIM) element 202 Gate line 38 Pixel electrode 202a Gate line 39 Light source 203 Source line -76- This paper is for China National Standard (CNS) A4 specification (210 X 297 mm) 1240098 A7 B7 V. Invention description (73) 40 Reflective film 203a ITO layer 41 Gate line 203b Metal layer 42 Data line 204 Thin film transistor 43 Driving element 205 Drain Electrode 44 Drain 206 Pixel electrode 45 Stored electricity as electrode 207 ITO layer 46 Gate insulating film 208 A1 layer 47 Insulating substrate 209 Gate insulating film 48 Contact hole 210 Gate 49 Interlayer insulating film 211 n + -Si layer 50 Reflective pixel electrode 212 Semiconductor layer 51 Transmissive pixel electrode 213 Channel protection layer 53 Color filter layer 214 Mo layer 54 Counter electrode 215 Common line 55 Liquid crystal layer 241 Conductive film 56 Alignment film 242 Layer 57 Polarizer 243 Pole · Pixel electrode connection layer 58 Backlight 244 Interlayer insulating film 59 Micro lens 245 Contact hole 60 Micro lens protective layer 246 Layer 61 Glass substrate 247 Passivation film -77- This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) 1240098 A7 B7 V. Description of the invention (74) 61a Gate insulation film 248 Contact layer 62 Resist film 249 Source 63 Light Mask 250 Bottom electrode 63a Round hole 252 Resist film 63b Round hole 253a Raised portion 63c Plate 253b Raised portion 64a High raised portion 254 Polymer film 64b Low raised portion 255 Connection electrode 64a, raised portion 256 pairs of substrates 64b 丨 Long convex part of the light source 65 Polymer resin film L2 Photomultiplier -78- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm)

Claims (1)

1240098 AB c D 6. Scope of patent application 1. A liquid crystal display device, which includes: a liquid crystal layer; a pair of substrates, which sandwich the liquid crystal layer; and a pixel region, which is formed on the substrate, and The pixel electrode is defined by a pair of pixel electrodes that apply a voltage to the liquid crystal layer, and is characterized in that the pixel region includes: a first region including a reflective layer having light reflectivity; and a second region including a reflective layer. Those with light transmittance; in the pixel region described above, the aforementioned first region and the aforementioned second region are formed in such a manner that one of them surrounds the other. 2. A liquid crystal display device comprising: a liquid crystal layer; a pair of substrates sandwiching the liquid crystal layer; and a pixel region formed on the substrate and applying a voltage to the liquid crystal layer. Defined by a pair of pixel electrodes; characterized in that the aforementioned pixel region has: a first region that includes a reflective layer having light reflectivity; and a second region that has a light transmittance; In the pixel region, the first region and the second region are arranged adjacent to each other, and the boundary between the first region and the second region is parallel to a side defining the outline outside the pixel region. 3. A liquid crystal display device comprising: a liquid crystal layer; a pair of substrates sandwiching the liquid crystal layer; and a pixel region formed on the substrate 'and applying a voltage to the liquid crystal layer. One of the pairs of pixel electrodes is defined; its features are as follows: the aforementioned pixel area has: the first area, which contains the light-reflective paper size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297) (B) A BCD 1240098 6. Reflective layer for patent application; and Zone 2, which is light-transmissive; Between Rain Zones 1 and 2, there are other areas, which are connected with ? X Different reflection or transmission characteristics of the first and second regions. 4. A liquid crystal display device, comprising: a liquid crystal layer; a pair of substrates that cool the liquid crystal layer; and a pixel region formed on the substrate 'and one of the voltages applied to the liquid crystal layer The pixel electrode is defined by: it is characterized in that the front pixel region has: a region 丨 which includes a reflective layer having light reflectivity; and a region 2 which has a light transmittance; as described above There is a switching element in the pixel area, which is electrically connected to the pixel electrode. There is a signal line or scanning line around one of the pair of pixel electrodes, which transmits the signal to the switching element. Or one of the aforementioned pair of pixel electrodes overlaps the aforementioned signal line or scan line via an insulating layer. 5. The liquid crystal display device according to item 4 of the scope of patent application, wherein a transparent electrode layer exists as one of the pair of pixel electrodes in the second region, and the transparent electrode layer extends to the first region, so that The signal line or the scanning line overlaps and is used as one of the pair of pixel electrodes in the first area. 6 · If the liquid crystal display device in the fourth item of the patent application scope, wherein the signal line or scanning line of the overlapped part is the reflective layer of the first area 0 -2-This paper size applies to the Chinese national standard (CNS ) A4 size (210x 297 directors) 1240098 7. A liquid crystal display device 'having: a liquid crystal layer;-to a substrate, ^ to sandwich the: crystal layer; and a pixel region, which is formed on the substrate, and is applied to the Kosho liquid crystal layer A voltage is bounded by a pair of pixel electrodes; it is characterized in that: the aforementioned pixel region has: the first #. Hanging 1 £, which includes the light reflective inverse: layer; and the second region 'which has Light transmissive; The reflective layer is one of the aforementioned pair of pixel electrodes. A light transmissive layer is provided in the second area, and the light transmissive layer is formed of the same material as the light reflective layer. And its light transmittance is higher than that of the aforementioned light reflecting layer. 8 ·-A liquid crystal display device, which includes: a liquid crystal layer;-a substrate, which sandwiches the liquid crystal layer; and a pixel region 'which is formed on the substrate, and is formed by applying a voltage to the liquid crystal layer Defined by a pair of pixel electrodes; characterized in that the aforementioned pixel region has: the first region, which includes a reflective layer having light reflectivity; and the second region, which has a light transmittance; more π There is also a government expansion agency, which is used to diffuse the light reflected by the aforementioned reflection area. 9. A liquid crystal display device comprising: a liquid crystal layer; a pair of substrates that sandwich the liquid crystal layer; and a pixel region formed on the substrate and applying one of the voltages to the liquid crystal layer A pixel electrode is defined; its characteristics are: -3- ! 240〇98 A. Patent application scope The aforementioned pixel area has: the first area, which includes a reflective layer with light reflectivity; and the second area, which has a light transmissive layer; the aforementioned reflective layer is used As the aforementioned pixel electrode. 10. The liquid crystal display device according to item 9 of the application, wherein the reflective layer is flat. 11. The liquid crystal display device according to item 9 of the scope of patent application, wherein the shape of the reflective layer is a light that scatters the light while reflecting it. 12. A liquid crystal display device comprising: an active array substrate including a substrate; a plurality of i-th wirings formed on the substrate; a plurality of second wirings connected to the first The wiring crossover; the driving element is the intersection of the Judi 1 wiring and the second wiring; the pixel private pole, which is electrically connected to the first electrode of the driving element; the opposite substrate, which The pixel electrode includes a counter electrode; and a liquid crystal layer, which is interposed between the active matrix substrate and the counter substrate; and the pixel electrode includes a pixel electrode for reflection and a pixel electrode for transmission. The pixel electrode for reflection and the pixel electrode for transmission are electrically connected to each other; at the first of each of the aforementioned driving elements! An insulating film is formed on the electrode, and the electrode has an inclined portion or an uneven portion. The reflective pixel electrode is provided on the insulating film. -4-