TWI233198B - Chip-type sensor against ESD and stress damages and contamination interference - Google Patents

Abstract

A chip-type sensor against ESD and stress damages and contamination interference includes a substrate structure and a protection layer covering over the substrate structure. The protection layer includes, from bottom to top, a first layer for providing a first stress against the substrate structure, a second layer for providing a second stress against the substrate structure, and a third layer for providing a third stress against the substrate structure. The first stress and the third stress belong to one of a tensile stress and a compressive stress, and the second stress belongs to the other of the tensile and compressive stresses.

Description

1233198 V. Description of the invention α) [Technical field to which the invention belongs] The present invention relates to a wafer-type sensor capable of resisting static electricity and stress damage and prevention, particularly to a wafer-type fingerprint sensor and a surface protection. The layer structure is designed to provide a disruptive effect. The present invention = Erdu 〇911〇68〇 'The application date is April 3, 2002. The name of the invention is = fingerprint reader chip.' Patent order; ⑴ 中 民 = No. __0, the date of China is May 6, 2003; the invention name is a capacitive fingerprint sensor that is clear of electrostatic damage and anti-residual interference, and its manufacture. Department II "J, Anti- / Residual / Capacitance means 0 92 1 32 480, application date / 9", () Surface treatment of the Republic of China patent application serial number device \ is 20 November 20, 2003 'The name of the invention is "a method in a wafer and a wafer device formed using the method." [Prior art] In the semiconductor manufacturing method provided by the semiconductor potential # ^ binomial domain provided by the wafer, 'the electrical characteristics of the package usually need to be hidden in the package, and the chip may be broken through the packaging process ::' In order to avoid any external force such as pressure and static electricity, etc. However, with the development of the chip application field of the exposed part, the new application makes it necessary to provide an environment-friendly, such as a chip-type fingerprint sensor. / ^ Said wafer surface in contact (ROC patent application

Page 7 1233198 V. Description of the invention (2) Serial number 091106806, what is the date of application?隹 / 1 Capacitive fingerprint reading chip "is temporarily February 3, and the invention name is" Circuit, which is used in identity recognition patents. "In order to read the mechanical characteristics of the surface of the finger, the pattern of the finger must be read. Considered to provide the test film]: ί: t T f Destroyed structure. For example, capacitive fingerprint sense, J film and more, the problem of fingerprint retention must be considered. On the sand 'capacitive fingerprint sensor chip' The basic structure is at-2 = measurement and control processing circuit. The surface of the wafer contains 22 plates as the sensing electrodes (from below the sensing electrode and formed-the dielectric material is collectively referred to as the substrate structure, the dielectric, and the wafer is exposed. : In addition to κ ′ 丨, the sensing capacitor ^ m ^ ^ ^ ^ r is a recurrence layer. In order to achieve the above-mentioned surface of the wafer, the conventional techniques such as “t, t” and “sex” all use a hard dielectric material 03/0 98 54 1) Wide protection layer, for example, world patents WO1 / 1/644 8A1, WO = / 〇m41A1, US patent No. 6G91 () 82, European patent = 6: 9, US patent No. 6 1 No. 1 4 8 62 and the second U.S. patent disclose this structure. In short, conventional techniques such as nitrides, carbides, oxides, or diamonds—hard dielectric materials, such as oxygen-cutting # or between-the-save-soft iron ^ dagger stone Although the hard material layer of carbon fiber, oxidized diamond or diamond is good in strength, it is produced in the semiconductor process until the thickness is limited. The reason is caused by the thermal residual stress between the {layer and the substrate structure. . g often nitriding

1233198 V. Description of the invention (3) Xi Anoxic fossil, oxidized inscriptions or diamonds will form a tensile stress 彳 t ^ t

Itensiie stress) # 庑, Ueda and other materials in the United States 柘 μ △ door should be deposited on a substrate structure that is too thick, it will cause breakage due to stress. Also, the helmet method $ 'is so-in the f-conductor process, only the thickness of less than 2 microns can be provided. Usually the problem. Nonetheless, it is still a good idea to avoid material defects caused by the above-mentioned orders and cause stress concentration: in them, damage. For this reason, the force exerted by the anti-defense officer Tian may be caused (the strength of the branches is proportional to the cubic power of the thickness), and it will become a degree of f. In addition to the above-mentioned mechanical problems such as the surface pressure of the wafer. -, Subject. Solving electrostatic damage can be divided into two directions: damage is another way to increase the thickness of the protective layer, because the type of static lightning that can withstand is proportional to the square of the degree, for example, general commercial integrated power: strong J series degree (which The material is usually oxygen cut and nitrogen; its protective structure), the double layer that can withstand the electrostatic destruction voltage (air㈣ "), and because the protective layer structure of the above invention cannot effectively increase the sound of A household to 1 KV, the above invention cannot only Using the protective layer material to achieve electrostatic destruction = ς, so, for this, another way is to use an exposed metal mesh structure ^. Conduction to the ground state, such as the above invention w〇⑽, w 诤 charge 0 3/0 98 54 1 Α1 The European patent EP 1 25 68 9 9 has adopted the concept of this kind of metal conducting static electricity. Many electronic products have adopted the method. The same lies in the fact that the implementation of the chip surface needs to consider that the integrated circuit L is inferior to the material. ^^^ For example, the process of the world patent WO 0 1/0 644 8A1 reveals the exposed sylvestris reticulate knot

1233198 V. Description of the invention (4) The structure is used as an electrostatic conduction structure, but the manufacturing process used, for example, a single layer of T i N as the metal sensing electrode and the exposed metal mesh structure is not used in the integrated circuit manufacturing process. The standard method, and the unevenness of the wafer can easily cause the disconnection of the TiN thin film wire. In addition, the resistance of TiN is quite large, and it is easy to burn if there is an instantaneous large static current. In addition, the world patent WO 03/0 98 54 1 A1 also discloses an almost identical bare metal mesh structure as an electrostatic conduction structure. The main difference is only that the outermost surface of the exposed metal contains gold material. This design can solve the problem of metal corrosion. However, this manufacturing process is not compatible with silicon integrated circuit manufacturing processes, because materials can cause contamination. ^ Zhou patent EP 1 2 5689 9 discloses a crane metal mesh design. However, in the subsequent steps, the carbon carbide on the surface of the sensor will cause defects / holes and cause stress concentration. When Katata ’s fingers accidentally hit the outer surface of the sensor, The formation of a hydrophilic #u A U hole structure will make the surface of the protective layer qualitative = when: the moisture of the finger will diffuse when it contacts the outer surface, and the chemical mechanical polishing (CMP) process will only reach Ping Li after a long time. Filled with the small holes and str, the surface of stratum filled with bamboo emulsified stone. However, this made the manufacturing process too complicated and the manufacturing process of a general commercial foundry. Protective layer material: til:;: Avoid fingerprint oil when using capacitive fingerprint sensor chip; θ is found to be hydrophilic or oleophilic) Cannot form residual Shao De / 7? Call, making finger fingerprints remain on the surface of the wafer to become residual ~ Like, affecting subsequent use, you can even use this to attack the system:

Page 10 1233198 V. Description of the invention (5) To the purpose of cracking. Therefore, how to provide a chip-type sensor capable of resisting static electricity and stress damage and preventing residue interference is a problem to be solved in this case. [Summary of the Invention] Therefore, one of the devices of the present invention is capable of resisting the sensing and describing purposes of damage and dry static electricity and the reactor by improving the sensing, and the disturbed wafer cover on the substrate structure includes: A first layer and a second layer, which are used for the third application and the second application which have less residue, and are used to provide a force damage to the purpose of the substrate, which can have an effect and extend the invention. The invention provides a sensor protection Floor. The substrate structure provides a structure that provides a third stress and a pressure applied to the substrate. The force belongs to the tensile stress and the compressive stress. Its protective layer structure provides a second stress, which is both a stress and a chip-type fingerprint sensing effect to prevent the interference of residues and service life. It can resist static electricity and stress, including a substrate structure and covering a first stress in order from bottom to top; and one of the other one of the first force; a third layer, the stress and the other The embodiment of the chip sensor of the present invention is described by taking a fingerprint sensor as an example. The type can be a capacitive fingerprint sensor, a temperature difference fingerprint sensor, or a capacitive pressure. Type fingerprint sensor, etc., but the present invention is not limited to this. FIG. 1 shows a schematic diagram of reading a finger print using a capacitive fingerprint sensor of the present invention. As shown in Figure 1, this fingerprint sensor 2 is fabricated on a silicon substrate

Page 11 ^ 33198 V. Description of the invention (6) and cut into a wafer shape, mainly covering a plurality of capacitive sensing elements 20 arranged in a two-dimensional (2 j)) matrix arrangement, and its peripheral control processing circuit ( (Not shown). A plurality of metal plates of a matrix type are arranged on the surface of the wafer as a sensing electrode (hereafter the sensing electrode includes a sensing and control processing circuit and a Shi Xi substrate will be collectively referred to as a substrate structure), and a dielectric material layer is formed on the wafer. The outer surface doubles as the sensing capacitor dielectric and the exposed layer of the chip.

When the finger 1 contacts the sensor 2, the irregular shape ridge 11 on the surface of the finger 1 will contact a part of the capacitive sensing element 2 0, and a corresponding response will be left on the sensor 2. The capacitance value curve 1 1 ^ at the ripple peak 11. By reading the shape of the capacitance value curve 11a, the original shape of the peak 11 can be identified. FIG. 2 is a schematic partial side view of the first embodiment of the capacitive sensing element of FIG. 1. FIG. As shown in FIG. 2, the capacitive fingerprint sensor of the present invention includes a silicon substrate 21, a plurality of (only one shown in the figure) sensing electrodes 22, and a protective layer 26. The silicon substrate 21 contains a sensing circuit 2 1A ′ corresponding to each of the sensing electrodes 22 and includes a signal processing and control circuit 2 1 B (schematically depicted in FIG. 4) around the sensing element array. For detailed sensor element array and peripheral circuit settings, please refer to another patent application of the inventor of this patent (丨) Republic of China Patent Application No. 091106806, the application date is April 3, 2002, and the invention name is

"Capacitive fingerprint reading chip", patent pending. The sensing electrode 2 2 is located on the Shixi substrate 21 and is electrically connected to the sensing circuit 2 1 a (from here on, the sensing electrode 2 2 includes the sensing circuit 2 1 A and the signal processing and control processing circuit 2 1 B And the silicon substrate 21 will be collectively referred to as a substrate structure 2 9). The protective layer 26 covers the substrate structure 29. Therefore, in this embodiment, the substrate structure 29 includes a silicon substrate 2 j and a plurality of sensing electrodes 22. Silicon substrate 2 1 contains multiple sensing circuits 2 1 A

1233198 Description of the invention (7) and a signal processing and control circuit 2 1 B. A plurality of sensing electrodes 2 2 are formed on the Shixi substrate 2 1 in an array manner, and are corresponding to the sensing circuits 2a and electrically connected to the sensing circuits 2 1A. The protective layer 26 includes first to third layers 26 to 26 (:) from bottom to top. A layer 2 6 A is used to provide a first stress to the substrate structure 29. A second sound 26B is used to The substrate structure 29 provides a second stress. The third layer 26 (: provides a third stress to the substrate structure 29.

-In one example, the first stress and the third stress belong to the same stress, and the second stress belongs to a compressive stress. That is, the tensile stress provided by the first layer 26A and the third layer 26C is used to offset the compressive stress provided by the second layer 26B, so that the thermal residual stress of the protective layer 26 is reduced. In this case, the first layer 26A and the third layer 26C are composed of a single layer or a composite layer of silicon nitride, silicon carbide, diamond-like carbon material, and diamond material, and the second layer 26β is composed of silicon dioxide. Group _ into &. The preferred combination of the first to third layers in this embodiment is silicon nitride oxide / silicon nitride, which can reduce the manufacturing cost because it can be used with commercial integrated circuit manufacturing processes. Meanwhile, in this embodiment, the thickness of the two-layered nitride can be different to maintain a proper stress structure. In another example, the first stress and the third stress are both compressive stresses.

The second stress is a tensile stress. That is, the compressive stress provided by the first layer 26A and the third layer 26C / it is used to offset θ with the tensile stress provided by the second layer 26B, so that the thermal residual stress of the protective layer 26 is reduced. In this case, the second layer 26B is composed of a single layer or a composite layer of silicon nitride, silicon carbide, diamond-like carbon material, or diamond material, and the first layer 26A and the third layer 26C are composed of dioxide. Composed of silicon. The preferred combination of the first to third layers in this embodiment is two

1233198 V. Description of the invention (8) Oxidized stone eve / _ several offices / — β process phase chemical eve / second emulsified stone eve 'Because it can be used with commercial integrated circuit to make the edema of stone eve to reduce the manufacturing cost. At the same time, in this embodiment, the two-layer dioxide may be different to retain a proper stress structure. TS t The sandwich structure of the protective layer of the present invention can keep the whole mind: the remaining stress is reduced, so that the thickness of the protective layer can be increased, so that the strength of Λ f ^ is proportional to the cube of the thickness, and The electrostatic field strength is proportional to the square of the thickness) and has a good r ^. In the embodiment of the present invention, the thickness of the protective layer is preferably 3 to 5 micrometers. For example, in a preferred embodiment of the present invention, it is silicon dioxide in order. 7 " "二姑 ^ m / 一 emulsified silicon 0 · 2 // m, which shows that the mechanical strength will be at least 3 times the custom tm. At the same time, compared to commercial integrated circuits: the thickness is about 1 micron, and the electrostatic field withstand of the embodiment of the present invention can be increased At least 8 times. Partial side view of the second embodiment of the capacitive sensing element shown in FIG. 1 as shown in FIG. 1 is shown in FIG. 1. The white layer can be f white. Μ In addition to the two Meiji structures, the protective layer 2 6 J is more Contains a fourth layer 26D, which belongs to the first molecular material, Yu Xi 篦-M9Rr Bu Iν, which is coated on the second layer 2C of the mouth sad brother, to provide a first-hand .u ^ _ surface, In order to prevent fingerprints from remaining on the water-repellent water- and oil-repellent Teflon or iron-like chemical structure material ^ The molecular material layer 26D is formed by using a quasi-eight ancient catty, or. , 咼 is formed in 筮-厣 9fir, and it is formed by a solution of the same knife monomer. On the second layer 26C, there is a molecular monomer. ^ And the end of a silicon polar end group. Yang Xipianpang tired person to contact both a mountain ^ body

The system is used to expose the 26D dead spear to the molecular material layer from the U.W shape. The end system is exposed to the outside, and there is a murine carbohydrate molecule, which is used to protect an integrated electric party. Interference, the polar end of the silane group is used

1233198 V. Description of the invention (9) It is firmly fixed on the third layer 26C. In another embodiment, the fourth layer 26D may be a ceramic atomic layer, for example, it is oxidized on the Lu and emulsified layer to form the same water and oil repellent surface (see the Republic of China Patent The application number is 092124697, the application date is September 8, 2003. The invention name is "Capacitive fingerprint sensor capable of preventing fingerprint residue and its processing method" and the Republic of China patent application number is 092132480, and the application date is 2000. 3 years 1 November 20th, the invention name is "Surface treatment method of wafer device and wafer device formed by using this method"). In addition to the above-mentioned protective layer structure designed by stress compensation, which can greatly increase the compressive strength and the protection against electrostatic damage, in order to further increase the electrostatic protection of the chip fingerprint sensor of the present invention, please refer to FIG. 4, which is an electrostatic protection Another embodiment. FIG. 4 is a schematic cross-sectional view of the capacitive fingerprint sensor of FIG. 3. As shown in FIG. 4, the capacitive fingerprint sensor 2 of the present invention basically includes a Shi Xi substrate 2 containing a plurality of sensing circuits and a signal processing and control circuit 1. A plurality of flat plates belonging to a sensing electrode The electrode 22, a metal mesh 2 3, a plurality of electrostatic discharge cells 2 4, a plurality of welding pads 25, and a protective layer 26. In this embodiment, the substrate structure 29 can be regarded as including a silicon substrate 21, a plate electrode 22, a metal mesh 23, an electrostatic discharge unit 24, and a bonding pad 25. The plate electrodes 22 are formed on the silicon substrate 2 i in an array arrangement. A metal mesh 23 is formed between the flat electrodes 22 and is flush with the flat electrodes 22 and surrounds each of the flat electrodes 22. In detail, the metal meshes 2 3 are arranged vertically and horizontally in the gaps between the flat electrodes 22. Each of the plate electrodes 22 and the metal mesh 2 3 are separated by a predetermined distance. These pads 25 are used as the input and output parts of the capacitive fingerprint sensor 2. The metal mesh 2 3 connections

Page 15 1233198 V. Description of the invention (10) To a ground terminal GND, the main purpose is to guide static electricity to the ground terminal GND to prevent the sensor from being damaged by static electricity. The electrostatic discharge cells 24 are connected to the metal mesh 23 and further connected to the ground terminal. The distance D between the adjacent electrostatic discharge cells 24 is much larger than the distance between the adjacent plate electrodes 22, so the number of the electrostatic discharge cells 24 is much smaller than the number of the plate electrodes 22. The protective layer 2 6 is completely covered on the flat electrodes 22 and the metal mesh 23 ′ and is partially covered on the electrostatic discharge cells 24 and the bonding pads 25. The protective layer 26 forms a plurality of first openings 27 on the electrostatic discharge cells 24, and forms a plurality of second openings 28 on the pads 25.

It is worth noting that the size of each of the first openings 27 is much smaller than the size of each of the second openings 28. Fig. 5 is a partially enlarged schematic view of Fig. 4. As shown in Figs. 5 and 6, one of the first layers 27 is located on the plate 21, and the first opening 27 on the aluminum alloy layer 52 is exposed. Each layer 51 is located on the titanium layer 51 and the gold layer 52 is located on the titanium layer 51 and the titanium nitride layer 53 is located on the same layer. It is worth noting that in each of the first openings 27, the titanium nitride layer 53 in one week of the titanium nitride layer 53 is substantially as shown in FIG. 7 and the capacitance of FIG. 4 can be obtained along the line 4-4 of FIG. 7. Cutaway schematic. Fig. 6 shows the welding pad shown in Fig. 4. The aluminum metal stack 30 includes an aluminum alloy layer 52 on the titanium layer 51 and a titanium nitride layer 53. The aluminum alloy layer 52 is formed by each pad 25 including a titanium on the substrate 21 and exposed by each of the second openings 28 on the alloy layer 52 and surrounding each of the second openings 28. Due to the characteristics of the money engraving process, one of the middle thickness T1 and the small side thickness T2 of the titanium nitride layer 53 is completely removed from each of the second openings 28. Partial top view of a fingerprint sensor. Go to the side view shown in Figure 4. From Figure 7, we can see 1233198 V. Description of the invention (Η) > From the moon, it is seen that 'in order to make the electrostatic discharge unit 24', the present invention sacrifices the sensing area of some flat electrodes without affecting the sensing effect. Therefore, the plate electrodes 22 include a plurality of sacrificial electrodes 22S and a plurality of standard electrodes 22N. The sacrificial electrodes 22S are adjacent to the electrostatic discharge cells 24, and each of the sacrificial electrodes 22S has a size smaller than that of each of the standard electrodes 22N. size. In this embodiment, each of the electrostatic discharge cells 24 is adjacent to only one sacrificial electrode 22S. Therefore, among the nine plate electrodes 22, there is only one sacrificial electrode 22S. The plate electrode 22 and the metal mesh 23 may be made of the same material. For example, the plate electrode 22 and the metal mesh 23 may be the topmost metal thin film in the integrated circuit manufacturing process, such as an aluminum metal laminate 30 or a copper laminate. In the embodiment, the area of the flat electrode 22 is about 40 microns, the area of the capacitive sensing element 20 is 50 microns * 50 microns, and the sensing capacity is formed between the flat electrode 22 and the hand, and The metal net 23 is used for electrostatic protection. When a finger approaches the sensor, static electricity can flow from the first opening 27 _ to the ground 23 to the ground terminal gnd.于 太 眚 # 点 丨 士. In this embodiment, the optimal distance between two adjacent electrostatic discharge cells 24 is 500 to 1000 microns. The top-down view 8Λ shows a dagger of a capacitive fingerprint sensor according to a third embodiment of the present invention. The sensor is similar to FIG. 7 except that each of the electrostatic discharge units 24 in FIG.

That is, the two adjacent flat electrodes 22 are used from the dead 7J electric unit 24. Each area is sacrificed for electrostatic discharge. The second embodiment of the capacitive fingerprint sensor according to the fourth embodiment is similar to that of FIG. 7 except that the 70 series is only associated with four sacrificial electrodes 22S. Adjacency. Also 1233198 V. Description of the invention (12) = Four adjacent plate electrodes 22 each sacrifice one area for the early element 24. With the above-mentioned structure, the first opening 27 供 for the electrostatic discharge unit 24 and the second opening 28 for the welding 系 25 are designed in the same mask, but their sizes are quite different. For example, the size of the first opening 27 is usually 5 to 10 micrometers, and the size of the second opening 28 and the umbrella ^ ^ are usually 100 to 150 micrometers. During the process of forming the opening of the mantle, it can not only completely Removal and retention: the soil formation opening 2 8 and the uppermost titanium nitride layer 5 3 can also be completed: it is removed and the Shao alloy layer 52 is completely exposed, in order to facilitate subsequent threading KK = artist should be able to easily It is understood that the t It used to form the opening has a loading effect, that is, 枓, and the second: the smaller the etching speed is slower. The present invention utilizes this feature. By time control, the titanium nitride layer 53 (thickness of about n!% On the upper side of the P-knife in the first opening 27) can be retained. Rats are rotten and suitable for long-term use. Nitrides 1 The layer 53 is not easy to oxidize. The object of the sensor can be: == gas: 7? ° this, close to and aluminum alloy # 52 i 车 录 基, s by 苐 一The opening 27 and the titanium nitride layer 53 are used in the present invention to the ground terminal, so as to avoid electrostatic damage. And S = 2 mesh materials and manufacturing procedures are completely equivalent to any quotient + Cheng t, private, and most use of The top aluminum or copper metal process simultaneously completes the sensing electrode and the static clothing of the two people. JJ 丁 沐 制造 产 # Τ 4 ^ ^ Anti-knock metal mesh. The above-mentioned conventional technology can be exempted. The problem of compatibility or material incompatibility is eliminated. The design of the process does not require the use of the aforementioned two materials with high complexity: Fang Γ and can fully utilize the standard flow and materials of commercial integrated circuit factories. Manufacture the sensor of the present invention. I ^ ΒΙΙΜΙ Page 18 1233198 V. Description of the invention (13) The advantages of the present invention are not only in E SD protection capability. At the same time, ESD protection can be completed using only a few electrostatic discharge cells with long distances. Even if there is residue after use, most of the residue is independent, and it is not connected to the metal mesh 2 3, which reduces many residue capacitors. Interference caused by the image. The specific embodiments proposed in the detailed description of the preferred embodiments are only used to facilitate the description of the technical content of the present invention, rather than limiting the present invention to the above embodiments in a narrow sense without exceeding The spirit of the invention and the scope of the patent application below, and the various changes made are all within the scope of the present invention.

Page 19 1233198 Brief Description of Drawings Figure 1 shows a schematic diagram of reading fingerprints using a capacitive fingerprint sensor of the present invention. FIG. 2 is a schematic partial side view of the first embodiment of the capacitive sensing element of FIG. 1. FIG. FIG. 3 is a schematic partial side view of the second embodiment of the capacitive sensing element of FIG. 1. FIG. FIG. 4 is a schematic cross-sectional view of the capacitive fingerprint sensor of FIG. 3. FIG. 5 is a schematic partial cross-sectional view of FIG. 4. FIG. 6 shows an enlarged schematic view of the bonding pad of FIG. 4. FIG. 7 is a partial top view of the capacitive fingerprint sensor of FIG. 4. FIG. 8 shows a plan view of a capacitive fingerprint sensor according to a third embodiment of the present invention. FIG. 9 shows a schematic top view of a capacitive fingerprint sensor according to a fourth embodiment of the present invention. [Explanation of Symbols of Components] T 1 ~ Intermediate thickness GND ~ Ground terminal 1 ~ Finger 11 ~ Wave peak 2 0 ~ Capacitive sensing element 2 1 A ~ Sense circuit 22 ~ Flat electrode (sensing electrode) 22S ~ Sacrifice electrode T2 ~ peripheral thickness D ~ pitch 2 ~ fingerprint sensor 1 la ~ capacitance value curve 2 1 ~ silicon substrate 2 1B ~ signal processing and control circuit 22N ~ standard electrode 2 3 ~ metal mesh

Page 20 1233198 Brief description of drawings 2 4 ~ ESD 2 6 ~ Protective layer 26B ~ Second layer 2 6 D ~ Four layer 2 8 ~ Second opening 30 ~ Aluminum metal layer 5 2 ~ Ming alloy layer 2 5 ~ pad 2 6 A ~ first layer 2 6 C ~ third layer 2 7 ~ first opening 2 9 ~ substrate structure 5 1 ~ titanium layer 5 3 ~ titanium nitride layer

Page 21

Claims (1)

1233198 VI. Scope of patent application 1. A wafer-type sensor capable of resisting static electricity, stress damage and anti-fouling interference, including: a substrate structure; and a protective layer covering the substrate structure, the protective layer is The above sequence includes: a first layer to provide a first stress to the substrate structure; a substrate structure to provide a second stress; and a substrate structure to provide a third stress, which are both a sheet stress and a compressive stress A pair of two layers is used for the one third layer and used for one of the first stress and the third stress, and the second stress belongs to both the tensile stress and the compressive stress. The other 2. and anti-residue system are composed of second-class diamond carbon 3. and anti-residue silicon group diamond 4. and anti-disability. For example, the patent application scope of the first fouling interference is composed of wafer-type sensing oxide oxide, and the material and diamond materials are only as the patent application scope of the first fouling interference-type wafer-type sensing, and the first layer and the material As early as the patent application scope of the patent application, the wafer type sensing of the polymer material layer or ceramic is used to provide the atomic layer remaining on the surface, and it is in contact with a finger to repel water and oil. The first is made of nitrogen. The compound layer can be antistatic. The second layer can be antistatic by the nitride compound layer. The second layer is a layer or a device described in the second item. The layer is a device described in one or more items, wherein the electrical and stress destruction layer is composed of the third layer of silicon, silicon carbide. The electrical and stress failure layers are composed of silicon dioxide, silicon carbide, and silicon dioxide. The electrical and stress damage layer further includes: on the third layer, to prevent the finger Page 22 1233198 VI. Scope of patent application Anti-static and stress damage The polymer material layer is composed of materials. The layer of polymer material capable of resisting static electricity and stress is borrowed on the third layer. The combined end and a silane group are used to protect an integrated electrical end system for protecting the polymer from static electricity and stress. Destruction of the fluorocarbon polymer end has 5. As described in the scope of the patent application and the anti-fouling interference chip sensor, in which Teflon or Teflon-like chemical structure 6. If applied The chip sensor described in item 4 of the patent scope and preventing fouling interference, wherein a solution having a polymer monomer is formed by using a solution having a polymer monomer having a fluorocarbon polypolar end, and the fluorine The end of the carbon polymer is exposed to the outside to avoid external interference, and the silane-based polar material layer is firmly fixed on the third layer. 7. The chip-type sensor described in item 6 of the scope of patent application and anti-fouling interference, wherein one of the soft segments is a fluorocarbon polymer bond. 8. Anti-residue alumina 9. Anti-residue micron. 10 and anti-residue 5 micron 11 and anti-residue As described in item 4 of the scope of the patent application, a wafer-type sensor capable of resisting electrostatic interference and stress damage pollution, wherein the ceramic atomic layer is a layer or an oxide layer. The chip sensor capable of resisting static electricity and stress damage pollution as described in item 1 of the scope of patent application, wherein the thickness of the protective layer is greater than 2. The electrostatic resistance and stress damage as described in item 1 of the scope of patent application Wafer-type sensor with fouling interference, wherein the thickness of the protective layer is 3 to. As described in item 1 of the scope of the patent application, the wafer-type sensor with anti-static and stress-damaging fouling interference, wherein the substrate structure includes: Page 23, 1233198 VI. Application for patent scope 15. As described in item 13 of the scope of patent application, the chip-type sensor can resist static electricity and stress damage and anti-fouling interference, of which two adjacent electrostatic discharge cells The pitch is substantially between 500 and 100 microns. 16. The chip-type sensor capable of resisting static electricity, stress damage and anti-fouling interference as described in item 11 of the scope of patent application, wherein the sensing electrodes include a plurality of sacrificial electrodes and a plurality of standard electrodes, and The sacrificial electrodes are adjacent to the electrostatic discharge cells, and the size of each of the sacrificial electrodes is smaller than that of each of the standard electrodes. Page 25