1232980 九、發明說明： 【發明所屬之技術領域】 本發明有關於一種半穿透半反射液晶顯示器，特別有關於一種可使反 射區和穿透區之色度達到目標値的半穿透半反射液晶顯示器。 【先前技術】 液晶顯示器（LCD; liquid crystal display)可分爲三種，穿透式 (transmissive)液晶顯示器、反射式(reflective)液晶顯示器、和半穿透半反 射式(的118：^(^^)液晶顯示器。穿透式1^0使用背光〇^(±如11〇來作顯示， 但只能傳送約3%至8%的背光，因此，穿透式LCD需要高亮度的背光，因 而增加電力消耗。反射式LCD是使用環境光來作顯示，因此較爲省電。然 而，反射式LCD僅能在白天或辦公室內有外界光存在的情況下使用，但無 法在夜晚或微光下使用。 因此，半穿透半反射式LCD即因應而生。第1圖顯示一傳統半穿透 半反射式LCD的剖面示意圖，其包括一上基板160，一下基板150，夾於 上下基板150,160之間的一液晶層180，以及位於下基板150之下的一背光 模組170。一共同電極162設於上基板160之下方，一透明穿透電極164位 於下基板150上的穿透區t上。一反射電極152位於下基板150的反射區r 上，且在穿透區t上具有一透光開口 154。一濾光片168位於上基板160和 共同電極162之間。對於穿透模式，背光170所發出的光174，經由下基板 150、透明穿透電極164、濾光片168、和上基板160而出光。對於反射模 式，環境光172經由上基板160和灑光片168，入射到反射電極152上’被 反射電極152反射，再次經過濾光片168和上基板160而出光。 如上所述，在穿透區t，背光170所發出的光線174僅穿透濾光片168 一次即出光，但在反射區r，環境光172卻穿透濾光片168兩次才出光。因 此，會造成反射區的色飽合度較穿透區的色飽合度高的情況發生。 0773-10308TWF(5.0) 5 1232980 爲解決上述問題，習知曾想到在反射區內使用較淺色的顏色光阻’在 穿透區內使用較深色的顏色光阻，以使反射區的色飽合度和穿透區的色飽 合度變爲差不多。第2圖爲傳統上一畫素單元之濾光片，顯示綠色次畫素 區使用深淺兩色光阻的情形。此畫素單元分爲三個次畫素區：R，G，B。R 次畫素區內使用一種紅色光阻210R，B次畫素區內使用一種藍色光阻 210B，至於G次畫素區內則使用兩種綠色光阻211G和212G，其中211G 的顏色較212G爲淺。 第3圖爲沿第2圖之3-3’線而視之剖面示意圖，顯示半穿透半反射液 晶顯示器之G次畫素區。請參閱第3圖，此半穿透半反射LCD包括一下基 板100，一上基板200，和夾於上下基板100,200之間的液晶層300。下基 板1〇〇又可分爲一綠色反射區G〇〇和一綠色穿透區G(t)，一反射電極191 位於綠色反射區G(r)上，一透明穿透電極192位於綠色穿透區G(t)上。上 基板200上設有綠色光阻211G和212G，綠色光阻211G位於下基板100 之反射區G⑺的相對位置上，而綠色光阻212G則位於穿透區G⑴的相對位 置上。由於在反射區G(r)的光阻211G的顏色較在穿透區G⑴的212G爲淺， 可降低反射區的色飽合度，而使得反射區和穿透區的色飽合度趨於一致。 一般在製作濾光片之前，會先依照色度目標値進行電腦模擬，再實際 製作濾光片。如第3圖所示，反射區G(r)的光阻211G和穿透區G(t)的光阻 212G不可避免地會有重疊的情況發生，然而，電腦模擬時都是以光阻邊緣 爲平整的理想狀況來計算的，並未考慮光阻重疊的情況。再者，因製程中（1) 製作光阻的位置精度；（2)光罩原始設計重疊値；（3)光阻材料本身特性； (4)Cell Process-Assembly對位誤差等原因而造成偏移時，均會造成LCD的 實際色度與預期之目標色度產生偏差，而失去電腦模擬的意義。 【發明内容】 有鑑於此，本發明之目的爲解決上述問題而提供一種可使反射區和穿 0773-10308TWF(5.0) 6 1232980 透區之色度達到目標値的半穿透半反射液晶顯示器。 爲達成本發明之目的，依據本發明之第一特徵，本發明之半穿透半反 射液晶顯示器是由複數個畫素區所組成，且每個畫素區各包含三個不同顏 色的次畫素區；而此些次畫素區至少其中之一包括：一第一基板，包含一 穿透區和一反射區；一第二基板，位於第一基板之上方；一液晶，位於第 一基板和第二基板之間；以及一彩色濾光片，形成於第二基板之下方，且 包含一第一顏色光阻及一第二顏色光阻；其中當第一顏色光阻所設計之圖 案，全部位於反射區內時，第二顏色光阻亦有部分位於反射區內；或當第 二顏色光阻所設計之圖案，全部位於穿透區內時，第一顏色光阻亦有部分 位於穿透區內；使得因製程誤差而造成偏移時，並不會改變第二顏色光阻 位於穿透區之面積。 依據本發明之第二特徵，本發明之半穿透半反射液晶顯示器由複數個 畫素區所組成，且每個畫素區各包含三個不同顏色的次畫素區；而此些次 畫素區至少其中之一包括： 一第一基板，包含一穿透區及一反射區；一第二基板，位於第一基板 之上方；一液晶，位於第一基板和第二基板之間；以及一彩色濾光片，形 成於第二基板之下方，且包含一第一顏色光阻及一第二顏色光阻；其中第 二顏色光阻所設計之圖案，部分位於穿透區內且部分位於反射區內，使得 因製程誤差而造成偏移時，第二顏色光阻在穿透區內有一增加部分與一減 少部分，且增加部分和減少部分之面積互爲補償或大致相等。 第一和第二顏色光阻可爲一同顏色，且第一顏色光阻之色飽合度比第 二顏色光阻之色飽合度爲低。 反射區可位於穿透區之外圍，或者，反射區可位於穿透區之旁邊。 【實施方式】 本發明之特徵在於深淺色光阻在反射區和穿透區之相對位置上的設 0773-10308TWF(5.0) 7 1232980 計。由於在實際製作時’深淺色光阻在反射區和穿透區的邊界會有重疊混 色的情況以及上下基板在製程中會產生誤差，因此，本發明在模擬時即將 二者列入考量，以補償重疊混色及上下基板在製程中之誤差所造成之色偏 差。 第4a圖顯示依據本發明第一具體實施例之半穿透半反射液晶顯示器之 一次畫素區的顏色光阻之平面圖，第4b圖顯示沿著第4a圖之4-4’線而視 之剖面示意圖。請參閱第4b圖，此圖僅顯示本發明半穿透半反射液晶顯示 器之一個次畫素區的部分。此半穿透半反射LCD包括：一第一基板10，一 第二基板20，和界於兩基板之間的液晶30。第一基板(又稱陣列基板)10之 一次畫素區分爲一反射區r和一穿透區t，反射區r位於穿透區t之外圍。 反射區r上有一反射電極11，穿透區t上有一透明穿透電極12，反射區r 和穿透區t之間有一第一界限L1。 一彩色濾光片CF形成於第二基板20之下方，面對穿透電極12和反射 電極11。本實施例以單一次畫素區之單一顏色的光阻爲例作說明。彩色濾 光片CF包括同顏色之一第一顏色光阻21和一第二顏色光阻22，其中第一 顏色光阻21之色飽合度比第二顏色光阻22之色飽合度爲低。第一和第二 顏色光阻21和22之間有一第二界限L2。 如第4a和4b圖所示，第二界限L2全部位於第一基板10之穿透區t 內(虛線所圍起之部分）。亦即，第二顏色光阻22全部位於穿透區t內，第 一顏色光阻21大部分位於反射區r內，其餘位於穿透區t內。可依據製程 誤差所可能造成的偏移，適度調整第二界限L2與第一界限L1的距離。例 如，可將第二界限L2與第一界限L1的距離調整在大約〇·〇5至ΙΟμπι的範 圍內。如此，當第二顏色光阻22因製程誤差而造成偏移時，由於深色光阻 (第二顏色光阻22)仍會在穿透區t的範圍內，因此，第二顏色光阻22於穿 透區t內之面積可保持不變，而可使得反射區r和穿透區t之色度不受影響’ 而能符合目標色度値。 0773-10308TWF(5.0) 8 1232980 第5圖顯示依據本發明第二具體實施例之半穿透半反射液晶顯示器之 一次畫素區的顏色光阻之平面圖。虛線所圍起的部分爲陣列基板（未顯示） 上的穿透區t，虛線以外的部分爲反射區r，反射區r和穿透區t之間有一第 一界限Ll(即虛線）。顏色光阻包括同顏色之一第一顏色光阻21和一第二顏 色光阻22，第一顏色光阻21之色飽合度比第二顏色光阻22之色飽合度爲 低，第一和第二顏色光阻21，22之間有一第二界限L2。如第5圖所示，第 二界限L2全部位於陣列基板之反射區r內(虛線以外）。亦即，第一顏色光 阻21全部位於反射區r內，第二顏色光阻22大部分位於穿透區t內，其餘 位於反射區r內。可依據製程誤差所可能造成的偏移，適度調整第二界限 L2與第一界限L1的距離。例如，可將第二界限L2與第一界限L1的距離 調整在大約〇·〇5至ΙΟμπι的範圍內。如此，當第二顏色光阻22因製程誤差 而造成偏移時，由於第二界限L2仍然在反射區內，因此，第二顏色光阻22 於穿透區t內(虛線內）之面積可保持不變，而可使得反射區和穿透區之色度 不受影響，而能符合目標色度値。 第6a圖顯示依據本發明第三具體實施例之半穿透半反射液晶顯示器之 一次畫素區的顏色光阻之平面圖。虛線所圍起的部分爲陣列基板(未顯示) 上的穿透區t，虛線以外的部分爲反射區r，反射區r和穿透區t之間有一第 一界限L1(虛線）。顏色光阻包括同顏色之一第一顏色光阻21和一第二顏色 光阻22,第一顏色光阻21之色飽合度比第二顏色光阻22之色飽合度爲低， 第一和第二顏色光阻21，22之間有一第二界限L2。如第6a圖所示，第二界 限L2有部分位於陣列基板之反射區r上(虛線以外），有部分位於穿透區t 上(虛線以內）。亦即，第一顏色光阻21之大部分位於反射區r內，其餘位 於穿透區t內，第二顏色光阻22大部分位於穿透區t內，其餘位於反射區r 內。在第6a圖中，第二顏色光阻22所設計之圖案爲一菱形，但其圖案形 狀並不以此爲限。 第6b圖顯示當第二顏色光阻22因製程誤差而沿著方向D1偏移時穿透 0773-10308TWF(5.0) 9 1232980 區t的狀況。爲方便瞭解起見，偏移後之第二顏色光阻標示爲22’。當顏色 光阻22偏移到顏色光阻22’時，顏色光阻22在穿透區t處的增加部分標示 爲22(tl)，及減少部分標示爲22(t2)。於是，增加部分22(tl)之面積和減少 部分22(t2)之面積互爲補償；或在穿透區處增加部分22(tl)之面積和減少部 分22(t2)之面積大致相等。如此，即使第二顏色光阻22因製程誤差而造成 偏移時，第二顏色光阻22在穿透區t內的面積仍可維持不變。 第6c圖顯示當第二顏色光阻22因製程誤差而沿著方向D1偏移時反射 區r的狀況。爲方便瞭解起見，偏移後之第二顏色光阻標示爲22’。當顏色 光阻22偏移到顏色光阻22’時，顏色光阻22在反射區r處所增加的部分標 示爲22(1*1)，所減少的部分標示爲22(r2)。於是，增加的部分22(rl)之面積 和減少的部分22(1*2)之面積互爲補償；或在反射區處增加的部分22(rl)之面 積和減少的部分22(r2)大致相等。如此，即使第二顏色光阻22因製程誤差 而造成偏移時，第二顏色光阻22在反射區r內的面積仍可維持不變。 綜合上述，藉由第6a圖之濾光片設計，當第二顏色光阻22因製程誤 差而造成偏移時，由於第二顏色光阻22在穿透區t處所增加與減少的面積 互爲補償，在反射區r處所增加與減少的面積互爲補償，因此，可使得反射 區r和穿透區t之色度不受影響’而能符合目標色度値。 第7和第8圖顯示依據本發明第四和第五具體實施例之半穿透半反射 液晶顯示器之一次畫素區的顏色光阻之平面圖，爲第6a圖之變化形式。在 第7和第8圖中，第二顏色光阻22所設計之圖案爲一具有複數個凹陷之矩 形，但其圖案形狀並不以此爲限。例如，第二顏色光阻22所設計之圖案亦 可爲一具有複數個凹陷之多邊形。 第7和第8圖的設計原理和第6a圖類似，其共同點爲，第二界限L2 有部分位於陣列基板之反射區r上(虛線以外），有部分位於穿透區t上(虛線 以內），並且，將第二顏色光阻22設計爲，當第二顏色光阻22因製程誤差 而造成偏移時，在穿透區t處所增加與減少的面積互爲補償。最好是將在穿 0773-10308TWF(5.0) 10 1232980 透區t處所增加與減少的面積設計爲大致相等。如此，即使第二顏色光阻 22因製程誤差而造成偏移時，第二顏色光阻22在穿透區t內的面積仍可維 持不變。 再者，亦可將第二顏色光阻22設計爲，當第二顏色光阻22因製程誤 差而造成偏移時，在反射區r處所增加與減少的面積互爲補償。最好是將在 反射區r處所增加與減少的面積設計爲大致相等。如此，即使第二顏色光阻 22因製程誤差而造成偏移時，第二顏色光阻22在反射區r內的面積仍可維 持不變。如此，反射區和穿透區之色度不致因光阻偏移而有變化，而能符 合目標色度値。 第9圖顯示依據本發明第六具體實施例之半穿透半反射液晶顯示器之 一次畫素區的顏色光阻之平面圖。實線所圍起的部分爲陣列基板(未顯示) 上的反射區r，虛線所圍起的部分爲陣列基板(未顯示)上的穿透區t，反射區 r和穿透區t之間有一第一界限L1。顏色光阻包括同顏色之一第一顏色光阻 21和一第二顏色光阻22，第一顏色光阻21之色飽合度比第二顏色光阻22 之色飽合度爲低，第一和第二顏色光阻21和22之間有一第二界限L2。如 第9圖所示，第二界限L2有部分位於穿透區t內，有部分於第一界限L1 上。亦即，第一顏色光阻21大部分位於反射區r內，其餘位於穿透區t內， 第二顏色光阻22全部位於穿透區t內。可依據製程誤差所可能造成的偏移， 適度調整在穿透區t內第二顏色光阻22之邊緣和第一顏色光阻21之邊緣的 距離。例如，可將穿透區t內第二顏色光阻22之邊緣和第一顏色光阻21 之邊緣的距離調整在大約〇.〇5至ΙΟμηι的範圍內。如此，當第二顏色光阻 22因製程誤差而沿著D2方向偏移時，由於第二顏色光阻22仍然在穿透區 t內，因此，第二顏色光阻22於穿透區t內之面積可保持不變，而可使得反 射區和穿透區之色度不受影響，而能符合目標色度値。 以上所舉的具體實施例都是針對一個次畫素區的顏色光阻來作說明， 可以是紅色光阻、綠色光阻、或藍色光阻，並沒有限制。因此，依照所用 0773-10308TWF(5.0) 11 1232980 顏色光阻的數量，可將本發明分爲以下幾類。 四色光阻：可將一種顏色的光阻設計爲具有深淺色，淺色光阻之全部 或大部分位於反射區內，深色光阻之全部或大部分位於穿透區內，使得光 阻因製程誤差而造成偏移時，深色光阻在穿透區內之面積可維持不變，或 者深色光阻在穿透區內所增加或所減少的面積互爲補償。至於另兩種顏色 可僅用單一顏色光阻。 五色光阻：可將兩種顏色的光阻設計爲具有深淺色，淺色光阻之全部 或大部分位於反射區內，深色光阻之全部或大部分位於穿透區內，使得光 阻因製程誤差而造成偏移時，深色光阻在穿透區內之面積可維持不變，或 者深色光阻在穿透區內所增加或所減少的面積互爲補償。至於另一種顏色 可僅用單一顏色光阻。 六色光阻：可將三種顏色的光阻均設計爲具有深淺色，淺色光阻之全 部或大部分位於反射區內，深色光阻之全部或大部分位於穿透區內，使得 光阻因製程誤差而造成偏移時，深色光阻在穿透區內之面積可維持不變， 或者深色光阻在穿透區內所增加或所減少的面積互爲補償。第10圖即顯示 一個畫素區之本發明六色光阻的平面圖。此六色光阻包括一紅色光阻，位 於一紅色次畫素區R內；一綠色光阻，位於一綠色次畫素區G內；和一藍 色光阻，位於一藍色次畫素區B內。 紅色光阻包括一第一紅色光阻21(R)和一第二紅色光阻22(R)，第一紅 色光阻21(R)之色飽合度比第二紅色光阻22(R)之色飽合度爲低。其設計和 第7圖所示相同，在此不再贅述。 綠色光阻包括一第一綠色光阻21(G)和一第二綠色光阻22(G)，第一綠 色光阻21(G)之色飽合度比第二綠色光阻22(G)之色飽合度爲低。其設計和 第4a圖所示相同，在此不再贅述。 藍色光阻包括一第一藍色光阻21(B)和一第二藍色光阻22(B)，第一藍 色光阻21(B)之色飽合度比第二藍色光阻22(B)之色飽合度爲低。其設計和 0773-10308TWF(5.0) 12 1232980 第6a圖所示相同，在此不再贅述。 綜合上述，本發明在陣列基板之反射區和穿透區的相對位置上，分別 使用淺色光阻和深色光阻作爲濾光，藉由深淺色光阻在反射區和穿透區之 相對位置上的特殊設計，使得光阻因製程誤差而造成偏移時，深色光阻在 穿透區內之面積可維持不變，或者深色光阻在穿透區內所增加或所減少的 面積互爲補償，最好是相等。如此，可使得因製程誤差與光阻重疊混色所 產生的影響減低，而使反射區和穿透區之色度符合目標色度値。 雖然本發明已以較佳實施例揭露如上，然其並非用以限制本發明，任 何熟習此項技藝者，在不脫離本發明之精神和範圍內，當可做更動與潤飾， 因此本發明之保護範圍當以後附之申請專利範圍所界定者爲準。 【圖式簡單說明】 第1圖顯示一傳統半穿透半反射式LCD的剖面示意圖。 第2圖爲傳統之一畫素單元之濾光片，顯示綠色次畫素區使用深淺兩 色光阻的情形。 第3圖爲沿第2圖之3-3’線而視之剖面示意圖。 第4a圖顯示依據本發明第一具體實施例之半穿透半反射液晶顯示器 之一次畫素區的顏色光阻之平面圖，第4b圖顯示沿著第4a圖之4-4,線而 視之剖面示意圖。 第5圖顯示依據本發明第二具體實施例之半穿透半反射液晶顯示器之 一次畫素區的顏色光阻之平面圖。 第6a圖顯示依據本發明第三具體實施例之半穿透半反射液晶顯示器 之一次畫素區的顏色光阻之平面圖。 第6b圖顯示當第二顏色光阻22因製程誤差而沿著方向D1偏移時穿 透區t的狀況。 第6c圖顯示當第二顏色光阻22因製程誤差而沿著方向D1偏移時反 0773-10308TWF(5.0) 13 1232980 射區r的狀況。 第7圖顯示依據本發明第四具體實施例之半穿透半反射液晶顯示器之 一次畫素區的顏色光阻之平面圖。 第8圖顯示依據本發明第五具體實施例之半穿透半反射液晶顯示器之 一次畫素區的顏色光阻之平面圖。 第9圖顯示依據本發明第六具體實施例之半穿透半反射液晶顯示器之 一次畫素區的顏色光阻之平面圖。 第10圖顯示本發明六色光阻之平面圖。 【主要元件符號說明】 習知技術〜 150〜下基板， 152〜反射電極， 154〜透光開口， 160〜上基板 162〜共同電極， 164〜透明穿透電極， 168〜濾光片， 170〜背光， Π2〜環境光， 174〜背光170所發出的光， 180〜液晶層’ t〜穿透區， r〜反射區， R〜紅色次畫素區， G〜綠色次畫素區， B〜藍色次畫素區， 210R〜紅色光阻， 210B〜藍色光阻， 211G〜較淺之綠色光阻， 212G〜較深之綠色光阻， 100〜下基板， 200〜上基板， 300〜液晶層， G(r)〜綠色反射區， G⑴〜綠色穿透區， 192〜透明穿透電極。 本發明〜 191〜反射電極， 0773-10308TWF(5.0) 14 1232980 10〜第一基板， 11〜反射電極， 12〜透明穿透電極， 20〜第二基板， 21〜第一顏色光阻， 22〜第二顏色光阻， 22’〜偏移後之第二顏色光阻， 22(tl)〜第二顏色光阻22因偏移在穿透區t處所增加的部分 22(t2)〜第二顏色光阻22因偏移在穿透區t處所減少的部分 22(rl)〜第二顏色光阻22因偏移在反射區1*處所增加的部分 22(d)〜第二顏色光阻22因偏移在反射區r處所減少的部分 30〜液晶， t〜穿透區， L1〜第一界限， D1〜光阻偏移方向， R〜紅色次畫素區’ B〜藍色次畫素區5 22(R)〜第二紅色光阻， 22(G)〜第二綠色光阻， 22(R)〜第二藍色光阻。 r〜反射區， CF〜彩色濾光片， L2〜第二界限， D2〜光阻偏移方向， G〜綠色次畫素區， 21(R)〜第一紅色光阻， 21(G)〜第一綠色光阻， 21(B)〜第一藍色光阻， 0773-10308TWF(5.0)1232980 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a semi-transmissive and semi-reflective liquid crystal display, and more particularly, to a semi-transmissive and semi-reflective that can achieve the target chromaticity of the reflective and transmissive regions LCD Monitor. [Prior technology] Liquid crystal displays (LCD; liquid crystal display) can be divided into three types: transmissive liquid crystal displays, reflective liquid crystal displays, and semi-transmissive (118: ^ (^^ ) Liquid crystal display. The transmissive 1 ^ 0 uses a backlight ○ (± such as 11) for display, but can only transmit about 3% to 8% of the backlight. Therefore, the transmissive LCD requires a high-brightness backlight, which increases Power consumption. Reflective LCDs use ambient light for display, so they are more power efficient. However, reflective LCDs can only be used in the presence of outside light during the day or in the office, but cannot be used at night or in low light Therefore, transflective LCDs are born accordingly. Figure 1 shows a schematic cross-sectional view of a traditional transflective LCD, which includes an upper substrate 160 and a lower substrate 150 sandwiched between upper and lower substrates 150 and 160. A liquid crystal layer 180 and a backlight module 170 below the lower substrate 150. A common electrode 162 is disposed below the upper substrate 160, and a transparent penetrating electrode 164 is disposed on the penetrating region t on the lower substrate 150. A reflective electrode 152 is located below The reflective region r of the substrate 150 has a transparent opening 154 in the transmissive region t. A filter 168 is located between the upper substrate 160 and the common electrode 162. For the transmissive mode, the light 174 emitted by the backlight 170 The light is emitted through the lower substrate 150, the transparent transmissive electrode 164, the filter 168, and the upper substrate 160. For the reflection mode, the ambient light 172 is incident on the reflective electrode 152 through the upper substrate 160 and the sprinkler 168 and is 'reflected' The electrode 152 reflects and emits light again through the filter 168 and the upper substrate 160. As described above, in the transmission region t, the light 174 emitted by the backlight 170 penetrates the filter 168 only once, but emits light in the reflection region r. However, the ambient light 172 penetrates the filter 168 twice before it emits light. Therefore, the color saturation of the reflection area is higher than that of the penetration area. 0773-10308TWF (5.0) 5 1232980 To solve the above Problem, I have thought of using lighter color photoresistors in the reflection area, and using darker color photoresistors in the transmission area to change the color saturation of the reflection area and the color saturation of the transmission area. It is almost the same. Figure 2 shows the filtering of the traditional pixel unit. Light film, showing the use of two shades of light resistance in the green sub-pixel area. This pixel unit is divided into three sub-pixel areas: R, G, B. A red photoresistor 210R, B is used in the R sub-pixel area. A blue photoresistor 210B is used in the sub-pixel area, and two green photoresistors 211G and 212G are used in the G-subpixel area, of which the color of 211G is lighter than that of 212G. Figure 3 is taken along Figure 2 3- 3 'line cross-sectional view, showing the G-th order pixel area of the transflective LCD. Referring to FIG. 3, the transflective LCD includes a lower substrate 100, an upper substrate 200, and a liquid crystal layer 300 sandwiched between upper and lower substrates 100,200. The lower substrate 100 can be further divided into a green reflection area GOO and a green transmission area G (t). A reflection electrode 191 is located on the green reflection area G (r), and a transparent transmission electrode 192 is located on the green transmission area. Through the area G (t). The upper substrate 200 is provided with green photoresists 211G and 212G. The green photoresist 211G is located at a relative position of the reflection area G 区 of the lower substrate 100, and the green photoresist 212G is located at a relative position of the penetration area G 穿透. Since the color of the photoresist 211G in the reflection region G (r) is lighter than that of 212G in the transmission region G⑴, the color saturation of the reflection region can be reduced, and the color saturation of the reflection region and the transmission region tend to be consistent. Generally, before making a filter, a computer simulation is performed according to the chromaticity target, and then the filter is actually made. As shown in Figure 3, the photoresist 211G in the reflection area G (r) and the photoresist 212G in the transmission area G (t) inevitably overlap. However, the edges of the photoresist are used in computer simulation. It is calculated for the ideal condition of flatness, and the situation of photoresist overlap is not considered. Furthermore, due to (1) the positional accuracy of the photoresist during the manufacturing process; (2) the original design of the photomask overlaps; (3) the characteristics of the photoresist material itself; (4) the alignment error of the Cell Process-Assembly, etc. When moving, it will cause the actual chromaticity of the LCD to deviate from the expected target chromaticity, and lose the significance of computer simulation. [Summary of the Invention] In view of this, the object of the present invention is to provide a semi-transmissive and semi-reflective liquid crystal display capable of achieving the target chromaticity in the reflective region and the transmissive region of 0773-10308TWF (5.0) 6 1232980. In order to achieve the purpose of the present invention, according to the first feature of the present invention, the transflective liquid crystal display of the present invention is composed of a plurality of pixel regions, and each pixel region includes three different colors of secondary pictures. A pixel region; and at least one of these pixel regions includes: a first substrate including a transmission region and a reflection region; a second substrate above the first substrate; and a liquid crystal on the first substrate And the second substrate; and a color filter formed below the second substrate and including a first color photoresist and a second color photoresist; wherein when the first color photoresist is a pattern, When all are in the reflection area, the second color photoresist is also partially located in the reflection area; or when the pattern designed by the second color photoresist is entirely in the transmission area, the first color photoresist is also partially located in the transmissive area. In the transparent area; when the offset is caused by a process error, the area of the second color photoresist located in the transparent area will not be changed. According to a second feature of the present invention, the transflective liquid crystal display of the present invention is composed of a plurality of pixel regions, and each pixel region includes three sub-pixel regions of different colors; At least one of the prime regions includes: a first substrate including a transmission region and a reflection region; a second substrate above the first substrate; a liquid crystal between the first substrate and the second substrate; and A color filter is formed below the second substrate and includes a first color photoresist and a second color photoresist. The pattern designed by the second color photoresist is partially located in the penetration area and partially located. In the reflection region, when the offset is caused by a process error, the second color photoresist has an increase portion and a decrease portion in the transmission area, and the areas of the increase portion and the decrease portion are compensated or approximately equal to each other. The first and second color photoresists may be the same color, and the color saturation of the first color photoresist is lower than that of the second color photoresist. The reflection area may be located outside the penetration area, or the reflection area may be located beside the penetration area. [Embodiment] The present invention is characterized by the design of the dark and light color photoresist at the relative positions of the reflection area and the transmission area. 0773-10308TWF (5.0) 7 1232980 meter. Since the 'dark and light colored photoresist will overlap and mix at the boundary between the reflection area and the penetration area during the actual production, and the upper and lower substrates will produce errors during the manufacturing process, the present invention takes both into consideration during the simulation to compensate Color deviation caused by overlapping color mixing and errors in the upper and lower substrates during the manufacturing process. Fig. 4a is a plan view showing the color photoresistance of the primary pixel area of the transflective and semi-reflective liquid crystal display according to the first embodiment of the present invention, and Fig. 4b shows the view along line 4-4 'of Fig. 4a Schematic cross-section. Please refer to FIG. 4b, which shows only a part of a sub-pixel area of the transflective liquid crystal display of the present invention. The transflective LCD includes a first substrate 10, a second substrate 20, and a liquid crystal 30 interposed between the two substrates. A primary pixel of the first substrate (also referred to as an array substrate) 10 is divided into a reflection region r and a transmission region t, and the reflection region r is located outside the transmission region t. There is a reflective electrode 11 on the reflection region r, a transparent transmission electrode 12 on the transmission region t, and a first boundary L1 between the reflection region r and the transmission region t. A color filter CF is formed below the second substrate 20 and faces the transmissive electrode 12 and the reflective electrode 11. In this embodiment, a single color photoresistance in a single pixel area is taken as an example for illustration. The color filter CF includes a first color photoresist 21 and a second color photoresist 22 of the same color. The color saturation of the first color photoresist 21 is lower than that of the second color photoresist 22. There is a second boundary L2 between the first and second color photoresists 21 and 22. As shown in FIGS. 4a and 4b, the second limit L2 is all located in the penetration region t of the first substrate 10 (the portion surrounded by the dotted line). That is, the second color photoresist 22 is all located in the transmission region t, the first color photoresist 21 is mostly located in the reflection region r, and the rest is located in the transmission region t. The distance between the second limit L2 and the first limit L1 can be adjusted appropriately according to the offset caused by the process error. For example, the distance between the second limit L2 and the first limit L1 can be adjusted within a range of about 0.05 to 10 μm. In this way, when the second color photoresist 22 is shifted due to a process error, the dark color photoresist (second color photoresist 22) will still be within the range of the penetration region t. Therefore, the second color photoresist 22 The area in the transmissive region t can be kept unchanged, so that the chromaticity of the reflective region r and the transmissive region t is not affected 'and can meet the target chromaticity 値. 0773-10308TWF (5.0) 8 1232980 Figure 5 shows a plan view of the color photoresistance in the primary pixel area of a transflective liquid crystal display according to a second embodiment of the present invention. The portion surrounded by the dotted line is the transmissive region t on the array substrate (not shown), the portion outside the dotted line is the reflective region r, and there is a first boundary L1 (the dotted line) between the reflective region r and the transmissive region t. The color photoresist includes one of the first color photoresist 21 and a second color photoresist 22. The color saturation of the first color photoresist 21 is lower than that of the second color photoresist 22. The first and There is a second boundary L2 between the second color photoresists 21 and 22. As shown in Fig. 5, all the second limits L2 are located in the reflective region r (outside the dotted line) of the array substrate. That is, the first color photoresist 21 is all located in the reflection area r, the second color photoresist 22 is mostly located in the transmission area t, and the rest is located in the reflection area r. The distance between the second limit L2 and the first limit L1 can be adjusted appropriately according to the offset caused by the process error. For example, the distance between the second limit L2 and the first limit L1 may be adjusted within a range of about 0.05 to 10 μm. In this way, when the second color photoresistor 22 is shifted due to a process error, since the second limit L2 is still in the reflection region, the area of the second color photoresistor 22 (in the dotted line) in the penetration region t can be Keeping the same, the chromaticity of the reflection area and the penetration area is not affected, and it can meet the target chromaticity 値. Fig. 6a is a plan view showing the color photoresistance in the primary pixel region of a transflective liquid crystal display device according to a third embodiment of the present invention. The portion surrounded by the dotted line is the penetration area t on the array substrate (not shown), the portion outside the dotted line is the reflection area r, and there is a first boundary L1 (dashed line) between the reflection area r and the penetration area t. The color photoresist includes one of the same color, a first color photoresist 21 and a second color photoresist 22. The color saturation of the first color photoresist 21 is lower than that of the second color photoresist 22. The first and There is a second boundary L2 between the second color photoresists 21 and 22. As shown in FIG. 6a, the second boundary L2 is partially located on the reflective region r of the array substrate (outside the dotted line), and partially located on the penetration region t (within the dotted line). That is, most of the first color photoresist 21 is located in the reflection area r, the rest is located in the transmission area t, most of the second color photoresist 22 is located in the transmission area t, and the rest is located in the reflection area r. In Fig. 6a, the pattern designed for the second color photoresist 22 is a rhombus, but the pattern shape is not limited to this. Fig. 6b shows the state of penetration of the 0773-10308TWF (5.0) 9 1232980 area t when the second color photoresist 22 is shifted in the direction D1 due to a process error. For ease of understanding, the shifted second color photoresist is labeled 22 '. When the color photoresist 22 is shifted to the color photoresist 22 ', the increase portion of the color photoresist 22 at the penetration region t is designated as 22 (tl), and the decrease portion is designated as 22 (t2). Thus, the area of the increasing portion 22 (tl) and the area of the decreasing portion 22 (t2) are compensated for each other; or the area of the increasing portion 22 (tl) and the decreasing portion 22 (t2) are approximately equal at the penetration region. In this way, even when the second color photoresistor 22 is shifted due to a manufacturing error, the area of the second color photoresistor 22 in the penetration region t can remain unchanged. Fig. 6c shows the state of the reflection region r when the second color photoresist 22 is shifted in the direction D1 due to a process error. For ease of understanding, the shifted second color photoresist is labeled 22 '. When the color photoresist 22 is shifted to the color photoresist 22 ', the portion where the color photoresist 22 is added at the reflection area r is designated as 22 (1 * 1), and the reduced portion is designated 22 (r2). Therefore, the area of the increased portion 22 (rl) and the area of the decreased portion 22 (1 * 2) are mutually compensated; or the area of the increased portion 22 (rl) and the decreased portion 22 (r2) at the reflection area are approximately equal to each other. equal. In this way, even if the second color photoresistor 22 is shifted due to a manufacturing error, the area of the second color photoresistor 22 in the reflection region r can remain unchanged. To sum up, with the filter design of FIG. 6a, when the second color photoresistor 22 is shifted due to a process error, the areas increased and decreased by the second color photoresistor 22 in the penetration region t are Compensation. The increased and decreased areas in the reflection area r are compensated for each other. Therefore, the chromaticity of the reflection area r and the penetration area t is not affected 'and can meet the target chromaticity 値. 7 and 8 are plan views showing the color photoresistance of the primary pixel area of the semi-transparent and semi-reflective liquid crystal display according to the fourth and fifth embodiments of the present invention, which are variations of FIG. 6a. In FIGS. 7 and 8, the pattern designed for the second color photoresist 22 is a rectangular shape with a plurality of depressions, but the pattern shape is not limited to this. For example, the pattern designed by the second color photoresist 22 may also be a polygon having a plurality of depressions. The design principles of Figures 7 and 8 are similar to Figure 6a. The common point is that the second limit L2 is partially located on the reflective region r of the array substrate (outside the dotted line) and partially located on the penetration area t (within the dotted line). ), And the second color photoresist 22 is designed such that when the second color photoresist 22 is shifted due to a process error, the area increased and decreased in the penetration region t is mutually compensated. It is best to design the area that increases and decreases at the penetration zone t of 0773-10308TWF (5.0) 10 1232980 to be approximately equal. In this way, even when the second color photoresist 22 is shifted due to a process error, the area of the second color photoresist 22 in the penetration region t can be maintained unchanged. Furthermore, the second color photoresistor 22 may also be designed such that when the second color photoresistor 22 is shifted due to a manufacturing process error, the areas increased and decreased in the reflection area r are mutually compensated. It is preferable to design the area to be increased and decreased at the reflection area r to be approximately equal. In this way, even when the second color photoresistor 22 is shifted due to a manufacturing error, the area of the second color photoresistor 22 in the reflection region r can remain unchanged. In this way, the chromaticity of the reflection area and the transmission area will not be changed due to the shift of the photoresist, but can meet the target chromaticity 値. FIG. 9 is a plan view of a color photoresist in a primary pixel region of a transflective liquid crystal display device according to a sixth embodiment of the present invention. The portion surrounded by the solid line is the reflection area r on the array substrate (not shown), and the portion surrounded by the dotted line is the penetration area t on the array substrate (not shown), between the reflection area r and the penetration area t There is a first limit L1. The color photoresist includes one of the same color, a first color photoresist 21 and a second color photoresist 22. The color saturation of the first color photoresist 21 is lower than that of the second color photoresist 22. The first and There is a second boundary L2 between the second color photoresists 21 and 22. As shown in FIG. 9, the second limit L2 is partially located in the penetration region t and part is above the first limit L1. That is, most of the first color photoresist 21 is located in the reflection area r, the rest is located in the transmission area t, and the second color photoresist 22 is located in the transmission area t. The distance between the edge of the second color photoresist 22 and the edge of the first color photoresist 21 in the penetration region t can be adjusted appropriately according to the offset caused by the process error. For example, the distance between the edge of the second color photoresist 22 and the edge of the first color photoresist 21 in the penetration region t can be adjusted within a range of about 0.05 to 10 μm. In this way, when the second color photoresist 22 is shifted in the D2 direction due to a process error, since the second color photoresist 22 is still in the penetration area t, the second color photoresist 22 is in the penetration area t. The area can be kept unchanged, so that the chromaticity of the reflection area and the penetration area is not affected, and it can meet the target chromaticity. The specific embodiments mentioned above are described with reference to a color photoresistor in a sub-pixel area, and may be a red photoresistor, a green photoresistor, or a blue photoresistor, without limitation. Therefore, according to the number of 0773-10308TWF (5.0) 11 1232980 color photoresist used, the present invention can be divided into the following categories. Four-color photoresistor: One color photoresistor can be designed to have dark and light colors. All or most of the light-colored photoresistors are located in the reflection area, and all or most of the dark-colored photoresistors are located in the transmission area. When the deviation is caused by the error, the area of the dark photoresist in the penetration area can be maintained, or the area of the dark photoresist in the penetration area can be increased or decreased to compensate each other. As for the other two colors, only a single color photoresist can be used. Five-color photoresistor: Two color photoresistors can be designed to have dark and light colors. All or most of the light-colored photoresistors are located in the reflection area, and all or most of the light-colored photoresistors are located in the transmission area. When the process error causes an offset, the area of the dark photoresist in the penetration area can remain unchanged, or the area of the dark photoresist in the penetration area can be increased or decreased to compensate each other. As for the other color, only a single color photoresist can be used. Six-color photoresistors: All three colors of photoresistors can be designed to have dark and light colors. All or most of the light-colored photoresistors are located in the reflection area, and all or most of the dark-colored photoresistors are located in the transmission area. When a process error causes an offset, the area of the dark photoresist in the penetration area can remain unchanged, or the area of the dark photoresist in the penetration area can be increased or decreased to compensate each other. Fig. 10 is a plan view showing a six-color photoresist of the present invention in a pixel region. The six-color photoresist includes a red photoresist located in a red sub-pixel area R; a green photoresist located in a green sub-pixel area G; and a blue photoresist located in a blue sub-pixel area B Inside. The red photoresist includes a first red photoresist 21 (R) and a second red photoresist 22 (R). The color saturation of the first red photoresist 21 (R) is higher than that of the second red photoresist 22 (R). Color saturation is low. Its design is the same as that shown in Figure 7 and will not be repeated here. The green photoresist includes a first green photoresist 21 (G) and a second green photoresist 22 (G). The color saturation of the first green photoresist 21 (G) is higher than that of the second green photoresist 22 (G). Color saturation is low. Its design is the same as that shown in Figure 4a and will not be repeated here. The blue photoresist includes a first blue photoresist 21 (B) and a second blue photoresist 22 (B). The color saturation of the first blue photoresist 21 (B) is higher than that of the second blue photoresist 22 (B). Color saturation is low. Its design is the same as that shown in Figure 6a of 0773-10308TWF (5.0) 12 1232980, so it will not be repeated here. To sum up, the present invention uses light-colored photoresist and dark-colored photoresist as relative filters at the relative positions of the reflective region and the transmissive region of the array substrate, respectively. Due to the special design of the photoresist, the area of the dark photoresist in the penetration area can remain unchanged when the photoresist is shifted due to process errors, or the areas of the dark photoresist in the penetration area are increased or decreased. For compensation, it is better to be equal. In this way, the influence caused by the process error and the overlapping color mixing of the photoresist can be reduced, and the chromaticity of the reflection area and the penetration area conform to the target chromaticity 値. Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. Any person skilled in the art can make changes and retouches without departing from the spirit and scope of the present invention. The scope of protection shall be as defined by the scope of the patent application attached hereafter. [Schematic description] Figure 1 shows a schematic cross-sectional view of a conventional transflective LCD. Figure 2 is a conventional filter for a pixel unit, showing the use of two-tone light-resistance in the green sub-pixel area. Fig. 3 is a schematic cross-sectional view taken along line 3-3 'of Fig. 2. Fig. 4a is a plan view showing the color photoresistance of the primary pixel area of the transflective liquid crystal display according to the first embodiment of the present invention, and Fig. 4b shows the view along line 4-4 of Fig. 4a. Schematic cross-section. Fig. 5 is a plan view showing a color photoresist in a primary pixel region of a transflective liquid crystal display device according to a second embodiment of the present invention. Fig. 6a is a plan view showing a color photoresistance in a primary pixel region of a transflective liquid crystal display device according to a third embodiment of the present invention. Fig. 6b shows the state of the penetration region t when the second color photoresist 22 is shifted in the direction D1 due to a process error. Fig. 6c shows the situation of the inverse 0773-10308TWF (5.0) 13 1232980 emission area r when the second color photoresist 22 is shifted in the direction D1 due to a process error. Fig. 7 is a plan view showing a color photoresist in a primary pixel region of a transflective liquid crystal display device according to a fourth embodiment of the present invention. FIG. 8 is a plan view showing a color photoresist in a primary pixel region of a transflective liquid crystal display device according to a fifth embodiment of the present invention. FIG. 9 is a plan view of a color photoresist in a primary pixel region of a transflective liquid crystal display device according to a sixth embodiment of the present invention. FIG. 10 shows a plan view of a six-color photoresist according to the present invention. [Description of main component symbols] Conventional technology ~ 150 ~ lower substrate, 152 ~ reflective electrode, 154 ~ transparent opening, 160 ~ upper substrate 162 ~ common electrode, 164 ~ transparent penetration electrode, 168 ~ filter, 170 ~ Backlight, Π2 ~ Ambient light, 174 ~ Light emitted by backlight 170, 180 ~ Liquid crystal layer't ~ Transmissive area, r ~ Reflective area, R ~ Red sub-pixel area, G ~ Green sub-pixel area, B ~ Blue sub-pixel area, 210R ~ red photoresistor, 210B ~ blue photoresistor, 211G ~ lighter green photoresistor, 212G ~ darker green photoresistor, 100 ~ lower substrate, 200 ~ upper substrate, 300 ~ liquid crystal Layer, G (r) ~ green reflection area, G⑴ ~ green transmission area, 192 ~ transparent transmission electrode. The present invention ~ 191 ~ Reflective electrode, 0773-10308TWF (5.0) 14 1232980 10 ~ First substrate, 11 ~ Reflective electrode, 12 ~ Transparent transparent electrode, 20 ~ Second substrate, 21 ~ First color photoresist, 22 ~ The second color photoresist, 22 ′ ~ the second color photoresist after the shift, 22 (tl) ~ the second color photoresistor 22 is increased by the portion 22 (t2) ~ the second color due to the shift The portion 22 (rl) of the photoresist 22 that is reduced due to the offset at the penetration area t ~ the second color photoresist 22 The portion 22 (d) ~ the second color of the photoresist 22 that is increased by the offset due to the offset The portion reduced by the shift in the reflection area r is 30 ~ liquid crystal, t ~ transmissive area, L1 ~ first limit, D1 ~ photoresist shift direction, R ~ red sub-pixel area 'B ~ blue sub-pixel area 5 22 (R) ~ second red photoresistor, 22 (G) ~ second green photoresistor, 22 (R) ~ second blue photoresistor. r ~ reflection area, CF ~ color filter, L2 ~ second limit, D2 ~ photoresist shift direction, G ~ green sub-pixel area, 21 (R) ~ first red photoresist, 21 (G) ~ First green photoresist, 21 (B) ~ first blue photoresist, 0773-10308TWF (5.0)