TWI227585B - Resonant cavity component array applicable on wavelength division multiplexing (WDM) and method for producing the same - Google Patents

Abstract

The present invention relates to a resonant cavity component array applicable on wavelength division multiplexing (WDM) and a method for producing the same. A selective oxidation structure is formed in an epitaxial structure of a resonant cavity component, and comprises more than one AlxGa1-xAs oxidation adjustment layer. The wavelength of the wave emitted by a resonant cavity component is altered and controlled by using the properties that the reflective index and the thickness of a film will be altered when AlGaAs is oxidized into AlGaO. The amount of change of the wavelength for a resonant cavity component is determined by the number of layers, the thickness, and the composition of the AlxGa1-xAs oxidation adjustment layers contained in the selective oxidation structure.

Description

1227585

[Technical field to which the invention belongs] The present invention {about-a kind of resonant moon-sky element is about a method applied to multiplexing A > Eryi every method, knowing different methods. Resonant Cavity Element Array of Knife Wave and Its Manufacture [Previous Technology] With the prevalence and demand of the Internet, the optical communication technology will play a key role. Among them, the best way of WDM transmission capacity. It uses fiber's different data signals to convert the corresponding beam into a single optical fiber, which is then converted to a single optical fiber, and then the optical fiber frequency is increased. A complete high-density demultiplexing multiplexing receiving module, wavelength multiplexer, and solution length are used. Extraction multiplexer, dispersion compensation device, other optical communication components, processing circuits, and the need to include multi-wavelength light transmission are difficult and expensive; and because the resonance wavelength is easy to change, and it is used as an array of optical cavity elements, The engineering department has a good solution; but how to use it in a single cavity is still quite difficult. For example, the US patent No. 6 1 7 4 7 4 9 ^ The popularity of the media, the need for network bandwidth will play a heavy multiplexing system (Wavelength) in the future information transmission wheel is to increase the optical fiber communication bandwidth and increase several different wavelengths To share a single light with different light wavelength transmission, data packets from different sources can be placed in the transmission efficiency of 旯 through multi-wave division. As far as the system is concerned, it includes optical transmitters / engineers, fiber amplifiers (EDFAs), waves, filters, optical switch routers, and the mechanisms that construct their optical systems. However, the transmitting / receiving module is equivalent to the vertical RCD, which has a high fiber surface combining efficiency. With the light transmission / receiving module of the resonance system, it becomes a substrate to produce six different wavelengths. Form an epitaxial pattern on the substrate

1227585

V. Description of the invention (2) (pattern) 'Then control the resonant cavities in each area to achieve the multi-wavelength effect. It is difficult to form a second rate and is usually on the substrate pattern. : Wu Guo Patent No. 6 1 1 7 6 9 Θ, the principle of which is Yu D (DlSt; lbuted Reflector; DBR) ^^: Out: the same thickness of the cavity, and then use the growth (;;: Bragg reflection) Mirrors to form resonant cavities of different wavelengths, and the engraved sphericity cannot be accurately controlled and therefore difficult to control. '[Summary of the Invention] In order to solve the problems of the conventional technology, the present invention provides a resonance applied to multiplexed waves Cavity element array and ^ t,; r Λ! PAW / V ^ 卞 Han /, clothing k method. Fine from aluminum gallium arsenide a S); after the emulsification will form aluminum gallium (AlGaO) to change the pot refraction Rate and thickness, so the use of components to determine the signal, vertical pendulum ^ ΑΑ ^ 艾 其 refracting element display Φ less; ^ / and the alternative oxidative resonance cavity element array] [] (A1GaAs) Limits the wavelength of the resonant cavity element. It is also related to the control of the present invention. Engage in order; 1 petrochemical structure, which contains a selective oxygen sound in the structure of "Fox"; 2: the above-mentioned Shi Shenhua indium gallium (AlxGai_xAs) oxidation adjustment i in _ 1 is ϊ ^ Ϊ part of the deification 1 Lu The gallium (AlxGVxAs) oxidation adjusts the aluminum gallium arsenide (Α1Γ Α ί) to form aluminum gallium oxide (MGa0), so as to change the refractive index thickness of a part of the χ \-× S oxidization adjustment layer. From the selective oxidation range of L 丄 / T /, // layers, the tuners of the oxidizing regulators of the gallium oxide AlxGaHAS) ϋ # are different, so it is possible to change the 2 wavelengths of each resonant cavity one by one to achieve multiple The purpose of the wavelength. Among them, /, vibrating k 7L pieces establish upper platform structures of different sizes, each

Page 7 1227585 V. Description of the invention (3) = The upper platform structure contains more than one layer of aluminum gallium arsenide (AlxGaHAs) oxidation adjustment layer. At the same time, the amount of change in the wavelength of each cavity element is determined by the number, thickness and composition of the AlxGai_xAs oxidation adjustment layers contained in the selective oxidation structure. In order to further understand the purpose, structural features, and functions of the present invention, the drawings are described in detail as follows: [Embodiment] The resonator cavity element array applied to multiplexed partial wave and its manufacturing method disclosed in the manufacturing statement The wavelength of each cavity element is determined by the structure and experimental design. A surface-emitting laser (vertical-cavity surface emiuing \ aser, VCSEL) element array is used as an example to further illustrate the present invention. Please refer to Fig. 1 for a schematic view of an array structure of three wavelength elements. Among them, three kinds of elements with different wavelengths are built on a gallium arsenide (GaAs) substrate, and each is composed of a platform (mesa) of three parts: upper, middle, and lower. The lower platform structure 10 of each element is the same as the intermediate platform structure 20, and the lower platform structure 10 is sequentially from the bottom to the top of the gallium arsenide substrate 丨 the bottom bottom Bragg reflector 12 (bottom DBR) and the bottom contact Layer 13 (bottommcntacted). Then, the intermediate platform structure 20 to be accepted is a sandwich sandwiching the light emitting layers 23 and 24 with a symmetrical current limiting aluminum gallium arsenide (Al ^ Ga ^ As) oxide layer 22. The structure from bottom to top is structured according to Sequentially stacking the bottom contact layer 2 1. Current-limiting deuterium gallium UlQ.98GaQ.Q2As) oxide layer 22, light-emitting layers 23, 24 and current-limiting aluminum gallium arsenide (Al.98GaQ Q2As) oxide layer 22 (current confinement), Finally, the top contact layer 21 is covered again. The total count of the components in Zhuoxian County is shown, and the difference between the length and the length is determined by the platform structure above it.

1227585 Five invention descriptions (5) m 'The first adjustment layer 3 2 and the second adjustment layer 3 3 corresponding to the current-limited aperture of the intermediate platform have not been oxidized, and the original thickness is maintained and a first wavelength 11 is provided. . The diameter of the second surface-emitting laser 200 above the platform structure 30 is 30 microns, and the portion of the first adjustment layer 32 corresponding to the current-limited aperture of the intermediate platform has not been oxidized; and the second adjustment layer 3 3 is completely oxidized, and its overall refractive index and thickness are partially changed, and a second wavelength 12 is provided. The 30 diameter of the platform structure above the third surface-emitting laser 300 is 20 micrometers. Therefore, the portions of the first adjustment layer 32 and the second adjustment layer 33 corresponding to the current-limited aperture of the intermediate platform are full. Being oxidized, the overall refractive index and thickness also change more, and a third wavelength 13 is provided. That is, the selective oxidation method is used to produce devices with different wavelengths in one process. Since the oxidation degree of each adjustment layer of the present invention can be accurately controlled, the tolerance of the oxidation process error is large and the stability is high; and the amount of wavelength change between each element is determined by the thickness and composition of the adjustment layer before oxidation, and The thickness and composition can be precisely controlled by epitaxial growth, so the wavelength control is quite accurate. For example, a quarter-wavelength (1 / 4-fork) -thickness adjustment layer changes its wavelength to 8 nm after oxidation, and a sixteenth-wavelength (1/16 λ) -thickness adjustment layer has a wavelength change of 2 nm. By using different combinations of adjustment layers, multiple wavelength elements can be fabricated. = To further explain the relationship between the number of configuration wavelengths and the adjustment layer, the system is made of five resonant cavity elements for the slab coat, and the dimensions of the platform structure above it are covered by meters, 10 microns, 20 microns, 30 microns, and 40 micrometers, each with four adjustment layers (Layerl ~ Layer4), its oxidation ° 5 micrometers per hour, 10 micrometers per hour and 5 micrometers per hour = 2 meters, vibrating element of different sizes after one hour of oxidation It is integrated in the structure of the upper platform

1227585 Five, the layer table " —----- ^ __ oxidation. Upper platform structure (μπι) _ 40

Layerl (15 μιη / hr) '~ No Yes Yes' ~~ Yes' ~ Y ^ s

Layer2 (10 μηι / hr) No No Yes Yes

Layers ^ Mjl / hr) N〇 ^ ~

Y ^ T

Layer4 (2 um / hr) No ~~~ 'No No ~. ~

As shown in Table 1, each type of the upper platform structure can obtain a wave, and the total configuration number is the number of adjustment layers plus one, (ie NUNtH, where Nt iron is two, and N1 is the number of wavelength configurations) . In addition, such a change in thickness not only changes the two-wavelength, but also changes the light field distribution of the standing wave in the resonant cavity. The characteristics can maximize the light field intensity of the light-emitting layers of different wavelengths at different wavelengths. Optimized design for components with different wavelengths. The present invention may include various resonant cavity element arrays applied to multiplexed division waves, such as a resonant cavity photodetector (RCPD) vertical-cavity surface emitting laser (VCSEL) and a resonant cavity light emitting diode. Body (resonant cavity light emitting & 0 &, RCLED) and the like.

Since the present invention adopts a selective oxidation method, not only the wavelength control is precise, but the tolerance for the oxidation process is large. At the same time, a multi-wavelength resonant cavity element with good characteristics and low cost is produced in a single process. Although the preferred embodiment of the present invention is disclosed as described above, it is not intended to limit the present invention. Any person skilled in the relevant arts will not depart from the spirit of the present invention.

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Page 12 1227585 Brief Description of Drawings Figure 1 is a schematic diagram of the array structure of three wavelength elements. [Illustration of Symbols] 10 Lower platform structure 11 Deified gallium substrate 12 Bottom Bragg reflector 13 Bottom contact layer 20 Intermediate platform structure 21 Contact layer 22 Current limitation Limitation Su Ming oxide layer 23 Luminous layer 24 Luminous layer 30 Upper platform structure 31 Contact layer 32 First adjustment layer 33 Second adjustment layer 100 First surface-emitting laser 200 Second surface-emitting laser 300 Third surface-emitting laser

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Claims (1)

1227585 VI. Scope of patent application 1. An array of resonant cavity elements applied to multiplexed sub-waves. It is based on-a plurality of oxidized brown-limited resonator elements with different wavelengths. The crystal structure contains a selective oxidation structure. The selective oxidation structure includes an AlxGal-xAs oxidation adjustment layer, which is formed in the oxidation process to form aluminum gallium oxide (A1G a 0 ) To change the refractive index of a part of the AlxGVxAs oxidation adjustment layer, and to select the appropriate adjustment layer for each of the oxidized local cavity elements. The degree of sexual oxidation is different, so the resonance wavelength of each Γ ^^ confined cavity element is changed to achieve the purpose of multi-wavelength. 2. Resonant cavity applied to multiplexed division wave :: column as described in item 1 of the patent scope, wherein the selective oxidation structure is to create a top of different size for each of the oxidation flat 'flat 2 f cavity elements. The platform structure, the Shanghua hi system contains-above the layer of the Shishenhua Ming gallium, as described in the "oxygen 3 · = range of the first range of the resonance cavity applied to the h-wave," and the oxidation limitation type The amount of change in the wavelength of the resonant cavity element is determined by the thickness and composition of the layer, such as iron; • Yuan # ^ π The range of resonant cavity element arrays applied to multiplexed sub-waves as described in item 1, wherein the substrate is a Shishenhua gallium substrate. Page 141227585 6. Application patent scope 5 · A manufacturing method of a hybrid cavity element array applied to multiplexed sub-waves, the steps include: providing a substrate; forming a plurality of oxidation-limited resonant cavity elements on the substrate surface, The epitaxial structure of each of the oxidized confined cavity elements contains a selective oxidation structure, the selective oxidized structure includes more than one AlxGapxAs oxidation adjustment layer; oxidized edge oxidized confined cavity elements To make part of the aluminum gallium arsenide (AlxGa ^ xAs) oxidation adjustment layer after oxidation to form oxygen = aluminum gallium (AlGaO) to change a part of the area of the aluminum gallium arsenide (AixGaHAs) oxidation adjustment layer Refractive index and thickness, and due to the choice of the oxidation limitation of the resonator cavity element GaN GaAs (ΑΙΑ-xAs) oxidation adjustment layer: = different degrees to change each of the oxidation-limited resonant cavity elements fi I == long, open ^ applied to the multiplexed sub-wave resonator element array. = Resonant cavity applied to multiplexed sub-waves described in item 5, ten, yujita white, clothing manufacturing & For each of the oxidation partial-limit resonators =: inch: upper platform structure, the upper platform structure contains more than one aluminum gallium arsenide (AlxGai-xAs) oxidation-adjusted sound. 7. The method for manufacturing a response / element array as described in item 5 of the scope of the patent application, wherein the change in the wavelength of the resonant cavity of Xi Gong ^ knife wave is caused by the selective oxygen oxidation of the adjustment layer. The number of layers, thickness and composition are determined = 豕 1227585 Page 16