[go: up one dir, main page]

TWD183002S - 圖案化石英晶圓 - Google Patents

圖案化石英晶圓

Info

Publication number
TWD183002S
TWD183002S TW105303661F TW105303661F TWD183002S TW D183002 S TWD183002 S TW D183002S TW 105303661 F TW105303661 F TW 105303661F TW 105303661 F TW105303661 F TW 105303661F TW D183002 S TWD183002 S TW D183002S
Authority
TW
Taiwan
Prior art keywords
wafer
article
amount
view
symmetrical
Prior art date
Application number
TW105303661F
Other languages
English (en)
Inventor
Hiromi Okada
Masayuki Yamada
Satoshi Aizawa
Shinya Morita
Masayoshi Minami
Kazuhisa Osaka
Original Assignee
日立國際電氣股份有限公司
泰谷諾石英股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立國際電氣股份有限公司, 泰谷諾石英股份有限公司 filed Critical 日立國際電氣股份有限公司
Publication of TWD183002S publication Critical patent/TWD183002S/zh

Links

Abstract

【物品用途】;本設計的物品是圖案化石英晶圓，於半導體製造裝置中，載置在用來保持處理對象之半導體基板(晶圓)的基板保持具(晶圓保持具或晶舟)上，進行成膜處理時所使用的適配器。於本物品的表面施以凹凸形狀，以增加在本物品之表面所消耗的處理氣體的量，藉由使其與晶圓所消耗的處理氣體的量接近，以資提高形成在晶圓上的膜的均勻性。;【設計說明】;俯視圖與仰視圖相對稱，俯視圖省略。;左側視圖與右側視圖相對稱，左側視圖省略。
TW105303661F 2015-12-28 2016-06-24 圖案化石英晶圓 TWD183002S (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JPD2015-29187F JP1563719S (zh) 2015-12-28 2015-12-28

Publications (1)

Publication Number Publication Date
TWD183002S true TWD183002S (zh) 2017-05-11

Family

ID=57321914

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105303661F TWD183002S (zh) 2015-12-28 2016-06-24 圖案化石英晶圓

Country Status (3)

Country Link
US (1) USD789311S1 (zh)
JP (1) JP1563719S (zh)
TW (1) TWD183002S (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD897974S1 (en) * 2018-03-29 2020-10-06 Hamamatsu Photonics K.K. Semiconductor wafer
USD966276S1 (en) 2019-07-29 2022-10-11 Samsung Display Co., Ltd. Display module for wearable device
USD958094S1 (en) 2019-07-29 2022-07-19 Samsung Display Co., Ltd. Display panel
USD940131S1 (en) * 2019-07-29 2022-01-04 Samsung Display Co., Ltd. Display panel

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1427772A1 (de) * 1965-11-23 1968-12-12 Telefunken Patent Verfahren zum Zerlegen einer Halbleiterscheibe in einzelne Halbleiterplaettchen
JPS6088535U (ja) * 1983-11-24 1985-06-18 住友電気工業株式会社 半導体ウエハ
US5182233A (en) * 1989-08-02 1993-01-26 Kabushiki Kaisha Toshiba Compound semiconductor pellet, and method for dicing compound semiconductor wafer
JPH04276645A (ja) * 1991-03-04 1992-10-01 Toshiba Corp 化合物半導体ウエーハのダイシング方法
US20020121915A1 (en) * 2001-03-05 2002-09-05 Agere Systems Guardian Corp. Automated pattern clustering detection for wafer probe maps
JP4791693B2 (ja) * 2002-04-11 2011-10-12 積水化学工業株式会社 半導体チップの製造方法
SG111069A1 (en) * 2002-06-18 2005-05-30 Micron Technology Inc Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods
JP2004207606A (ja) * 2002-12-26 2004-07-22 Disco Abrasive Syst Ltd ウェーハサポートプレート
DE102005004827B4 (de) * 2004-02-03 2011-03-31 Disco Corp. Wafer-Unterteilungsverfahren
US8084400B2 (en) * 2005-10-11 2011-12-27 Intermolecular, Inc. Methods for discretized processing and process sequence integration of regions of a substrate
SG126885A1 (en) * 2005-04-27 2006-11-29 Disco Corp Semiconductor wafer and processing method for same
TWD119070S1 (zh) * 2005-09-08 2007-09-21 東京應化工業股份有限公司 支撐板
US7544574B2 (en) * 2005-10-11 2009-06-09 Intermolecular, Inc. Methods for discretized processing of regions of a substrate
JP4913517B2 (ja) * 2006-09-26 2012-04-11 株式会社ディスコ ウエーハの研削加工方法
US8882917B1 (en) * 2009-12-31 2014-11-11 Intermolecular, Inc. Substrate processing including correction for deposition location
USD614593S1 (en) * 2008-07-21 2010-04-27 Asm Genitech Korea Ltd Substrate support for a semiconductor deposition apparatus
JP2011100922A (ja) * 2009-11-09 2011-05-19 Toshiba Corp パターン形成方法、パターン形成システム及び半導体装置の製造方法
US8263876B2 (en) * 2009-12-30 2012-09-11 Harvatek Corporation Conductive substrate structure with conductive channels formed by using a two-sided cut approach and a method for manufacturing the same
CA138031S (en) * 2010-08-17 2011-11-17 Sumitomo Electric Industries Semiconductor substrate
JP1441120S (zh) * 2010-08-17 2015-05-11
USD651991S1 (en) * 2010-08-17 2012-01-10 Sumitomo Electric Industries, Ltd. Semiconductor substrate
JP2013172082A (ja) * 2012-02-22 2013-09-02 Toshiba Corp パターン形成方法、半導体装置の製造方法および塗布装置
USD716742S1 (en) * 2013-09-13 2014-11-04 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
USD720313S1 (en) * 2014-06-16 2014-12-30 Emcore Solar Power, Inc. Semiconductor wafer with dicing positions for solar cell fabrication

Also Published As

Publication number Publication date
JP1563719S (zh) 2016-11-21
USD789311S1 (en) 2017-06-13

Similar Documents

Publication Publication Date Title
TWD175852S (zh) 電漿處理裝置用上腔室
TWD187175S (zh) 圖案化石英晶圓
TWD153878S1 (zh) 基板運送用固持構件
TWD183002S (zh) 圖案化石英晶圓
TWD179672S (zh) 基板保持環之部分
TWD161690S (zh) 基板洗淨具之部分
TWD163179S (zh) 基板洗淨具之部分
TWD186397S (zh) 電漿處理裝置用放電腔室
JP1643626S (ja) 基板保持リング
JP1639752S (ja) 基板保持リング
TWD193203S (zh) Elastic film for semiconductor wafer polishing
TWD167111S (zh) 半導體晶圓硏磨裝置用彈性膜
TWD191627S (zh) Crystal boat side wall
TWD168373S (zh) 半導體晶圓硏磨裝置用彈性膜之部分
TWD178145S (zh) 複合基板
TWD167113S (zh) 半導體晶圓硏磨裝置用彈性膜
TWD195178S (zh) Crystal boat for substrate processing device
TWD164162S (zh) 半導體晶圓硏磨裝置用彈性膜之部分
JP1645741S (ja) 基板保持リング
JP1643629S (ja) 基板保持リング
JP1639766S (ja) 基板保持リング
JP1643945S (ja) 基板保持リング
JP1643944S (ja) 基板保持リング
JP1643943S (ja) 基板保持リング
JP1639762S (ja) 基板保持リング