TW594024B - Method for treating and testing semiconductor component - Google Patents

Abstract

Disclosed is a method for treating and testing a semiconductor component. The method includes the steps of breaking the insulating layer on contact pads of a semiconductor component by wire-bonding and forming metal bumps on the contact pads wherein the metal bumps directly contact and electrically connect to the contact pads. Thereafter, interconnects of a prober are placed in electrical communication with the metal bumps thereby conducting a testing step.

Description

Need to be divided and the burner may use one phase before packaging.) Forced devices are made in each of them, which cannot be positive or crystal. Description of the invention α) [Technical field to which the invention belongs] The present invention relates to a kind of Semi-prior art: Manufacturing, packaging, and testing of semiconductor integrated circuits. Test Parametric: In this method, the semiconductor device is cracked. Although packaging systems are often used by semiconductor manufacturers, the structure of devices with suitable properties and functional components is becoming more and more complicated. The previous wafer type or wafer type can reduce packaging to the point where the chip package structure cannot be handled properly. The damage of the wafer on the carrier causes the entire package structure to waste manufacturing costs, so it is important. Conductor wafer processing and testing methods. Functionality of each process (burn-wafer, to the nearest (the manufacturer can only test the device before the semiconductor can be tested, but often operates a circular size, including design, functional, i η) method. Here the wafer Or the more expensive steps of package construction, but also to guarantee semiconductor testing. As semiconductors must be tested in the packaging process, this can be done. In addition, with multiple components, only multiple may be affected by this. Eliminated, large tests are more necessary here

Generally speaking, in order to protect the internal structure of the wafer or bare wafer with surface pads, the wafer or wafer manufacturer will form a passivation layer on the wafer or crystal and the surface before shipping. Table 4 shows that manufacturers are poor. This protective layer is insulating and covers the entire surface of the pad. In addition, if the surface of the pad is not covered, it is easy to form a non-conductive oxide layer. Whether it is a protected home 9

594024 V. Description of the invention (2) Oxidation of y will make it difficult for the detector used in the test process to make an electrical connection with the wafer f to be measured. s This test manufacturer tests the wafer wafer, and it is necessary to scrape off the protective layer or oxide layer on the surface of the pad first. General: This scraping step is performed by using a needle-shaped connection contact on the detector. According to the second la and the photo, the surface of the pad 11 of the semiconductor device 100 is covered with a protective layer 120, so the detector 130 is used to test the semiconductor device. The force on the connection contact 140 promotes the needle-like The connection contact 140 is penetrated, and the protective layer 12G 'connection contact 14o can be electrically connected to the pad UG. The method of f ^ is also used to test the semiconducting crystal with an oxide layer on the surface of the pad! Or the more precise the design of the chip is, the more pads are distributed. Test the wafer or wafer with closely spaced pads: Use very thin pin-shaped contacts for the detector. However, the needle-shaped = contact details have weaker mechanical strength. To pass through the protective layer or oxide layer on the diaphragm through a very thin pin. · "Budang Valley is easy to buckle, causing the loss rate of the detector to be greatly increased. [Abstract] The 1st of the 1st of the system provides a method for processing and testing the pads with an insulating layer, which: semiconductor devices are destroyed by a wire process Layer, so that the insulating layer on the pad does not need to be applied ^^. ^ The contact is penetrated, so that the loss rate of the detector is large. In order to achieve the above and other objectives #, the present invention provides a semiconductor element. 5. Description of the Invention (3) Processing and testing method of the device. The method is characterized in that the insulation layer on the surface pad of the semiconductor 7C device is destroyed by the process, and a bump that is in contact with the pad and is electrically connected is formed into a straight connection point to penetrate the pad. Insulation layer: Therefore, in the test step, the detector only needs to make its connection contacts in contact with the bumps. == Test the semiconductor element to perform the test step without applying force on the connection contacts to penetrate the semiconductor element pads. An insulating layer (such as a protective layer or an oxide layer), thereby protecting the connection contacts, greatly reduces the loss rate of the detector. In the present invention, a variety of insulating layers, such as a protective layer or a metal oxide layer of the pad itself, can be destroyed by using a wire bonding process. In addition, bumps that are electrically connected to the pads will be formed in the wire bonding process, so that the connection points of the detectors can easily be electrically connected to the pads. In order to make the above and other objects, features, and advantages of the present invention more apparent, the preferred embodiments of the present invention are given below, in conjunction with the accompanying drawings, and the detailed description is as follows. [Embodiment] Figures 2a-2c illustrate the main steps of processing and testing a wafer 2000 according to an embodiment of the present invention. The semiconductor wafer 200 (see FIG. 2a) used in the present invention has a plurality of pads 21 on its surface and a protective layer 220 having insulating properties covering the entire surface of the wafer 200 and the pads 210. Referring to FIGS. 2a and 2b, the present invention is characterized in that the protective layer 22o above the connector 210 is destroyed by a wire-forming process and a bump 23o is formed to be directly and electrically connected to the connector 210. The wire making process is a method of using a wire making machine to convert gold 594024. V. Description of the invention (4)

A method for connecting wires (or inscription wires) to the chip pads and the conductive traces (or wires of the lead frame) of the substrate. Referring to Fig. 2a ', the gold wire 2 40 is a capillary 250 of a wire drawn into a wire punch by vertical silver. An electronic igniter (electronic flame-off (EF0)) (not shown) is used to heat the gold wire 24 (or the name wire) to make it liquid. The molten metal forms a ball 2 60 ° due to surface tension, and then the capillary steel nozzle 250 is lowered and the ball 2 600 is placed on the pad 2 0 of the wafer 2000. At this time, thermal ultrasonic bonding is performed, and the protective layer 220 between the pad 210 and the ball 260 is removed by using heat and ultrasonic waves, and the pad and the ball 260 are combined. When the bonding is completed, the capillary steel nozzle 250 is raised and cuts the connection between the ball 260 and the gold wire (or aluminum wire) in the capillary steel nozzle 250, thereby forming a bump 23 on the pad 210. However, as shown in FIG. 2b, in the same steps, each pad 2 20 on the wafer 200 is repeatedly formed to form a direct contact with the pad 21

Finally, referring to FIG. 2c, when the wafer 200 is to be tested, a detector 270 having ~ connection points 280 is directly placed on the wafer 2000. Since the bump 230 has a good electrical connection with the pad 21 〇, when the connection contact 28 om the bump 230 is in contact, the detector 27 〇 can be electrically connected to the pad 2 om through the bump 23 〇 and then execute Test steps. After the test step is completed, the detector is removed from the surface of the semiconductor element. The above processing and testing methods are also applicable to other semiconductor components such as wafers. Thereafter, the bumps on the semiconductor wafer (such as the bumps 23 in Figures 2a-2c) can be removed by dry etching or wet etching. Or directly

Page 10 594024 V. Description of the invention (5) A wire bonding process is performed again on the bump, and the wafer with the bump is electrically connected to a substrate or a lead frame. The main / main steps. Referring to Fig. 3a, similar to the first wire making process, the gold wire 240 is fed vertically into the capilUry of the wire making machine 25. 3a-3d, according to an embodiment of the present invention, a chip with a bump is electrically connected to a substrate or a lead frame and an electronic igniter (not shown) through a second wire bonding process. (In the figure) the gold wire (or aluminum wire) is heated to make it liquid. The molten metal forms a ball due to surface tension. Referring to FIG. 3B, the capillary steel nozzle 250 is lowered and the ball 3 ^ 〇 is brought into contact with the bump 23 on the wafer 300 pad 210. At this time, thermal ultrasonic bonding is performed, and the bumps 23 and the balls 31 are fused by heat and ultrasound to form the bumps 320. Referring to FIG. 3c, when the fusion is completed, the capillary steel nozzle 250 is raised and moved to another target 33Q (such as the conductive pad of the substrate or the inner end of the lead of the lead frame) to form a connection with the bump 32. Metal arc. Referring to FIG. 3D, the capillary steel nozzle 250 will drop at the other target 33 to form a second welding point (Weld) 340 to form a complete wiring connection between # 300 and the target 330. Then, the capillary steel nozzle 250 is raised again to cut off the connection between the metal wire in the steel nozzle 250 and the second welding point 34o. The 4 a j d diagram is an illustration. According to another embodiment of the present invention, the bump ϊ i = ΐ is electrically connected to a substrate or a wire by the second wire bonding process. Referring to Fig. 4a, similar to the first wire making process, the gold wire is fed vertically into the capillary 250 of the wire making machine. The fire wire (not shown) is used to heat the gold wire 240 (or aluminum wire /, and is liquid. The molten metal forms a ball due to surface tension.

Page 11 594024 V. Description of the invention (6) 310. Referring to FIG. 4b, the capillary steel nozzle 25 is lowered, and the ball 3 1 0 and the target 3 3 0 (such as the conductive connection of the substrate or the inner end of the lead of the lead frame) are joined by heat and ultrasonic waves to form a protrusion. Block 41o. Referring to FIG. 4c, when the joining is completed ', the capillary steel nozzle 250 is raised and moved toward the bump 230 on the wafer 300 pad 210 to form a metal isolated line connected to the bump 41. Referring to FIG. 4d, the capillary steel nozzle 250 will descend to the bump 230 on the wafer 3 00 pad 2 1 0 to form a second solder joint ^ 61 (0340) to form a complete wiring connection to the wafer 300 And the target 330. Then the capillary steel nozzle 250 is raised again to cut off the connection between the metal wire in the capillary steel nozzle 250 and the second welding point 340. The method according to this embodiment has the advantage of reducing the solitary height of the wire. The invention is characterized in that before the testing process, the insulation layer on the connection of the semiconductor element to be tested is broken by wire bonding, and a metal bump is directly connected to the electrical connection of the pad. This method is also suitable for Destroy the contact table, = conductive oxide layer. In this way, in the test step, the detector only needs to contact the bump with its connection contact to successfully test the semiconductor element. Therefore, no need to apply to the detector The extra force penetrates the insulating layer on the pad, thereby protecting the detector and its: identifying points and reducing the loss rate of the detector.-The present invention has been disclosed in the foregoing preferred embodiment, but it is not intended to limit it. ί Dou Ming Ming any cooked Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention is defined by the scope of the appended patents.

Page 12 594024 Brief description of the drawings [Simplified description of the drawings] Figures 1 a-1 b: cross-sectional views illustrating the main steps of testing a semiconductor device according to a conventional technique; Figures 2a-2c: cross-sectional views illustrating The main steps of a method for processing and testing a semiconductor device according to an embodiment of the invention; FIGS. 3a to 3d: cross-sectional views of a semiconductor device with a bump connected to a substrate or a lead frame according to an embodiment of the present invention; The main steps of the method; and FIGS. 4a-4d: cross-sectional views illustrating the main steps of a method for connecting a bumped semiconductor element to a substrate or a lead frame according to another embodiment of the present invention. [Illustration of number] 100 semiconductor element 110 pad 120 protective layer 130 detector 140 connection contact 200 semiconductor crystal 210 pad 220 protective layer 230 bump 240 gold wire 250 capillary steel nozzle 260 ball 270 detector 280 connection contact 300 Wafer 310 Ball 320 Bump 330 Target 340 Solder joint 410 Bump

Page 13

Claims (1)

594024 1. A method for processing and testing a semiconductor element, wherein the semiconductor element includes a plurality of pads provided thereon and an insulating layer is provided on a surface of the pad, the method includes the following steps: ... The insulating layer on the pad is destroyed in a manner such that a first metal is formed. A metal bump is formed on each pad and directly contacts the pad; a detector having a plurality of connection contacts is moved to the semiconductor element such that Each connection contact is electrically connected to the first metal bump on a contact pad; and the semiconductor element is tested through the connection contact of the detector. (2. The method for processing and testing a semiconductor element according to item 1 of the scope of the patent application, further comprising, after performing the test step on the semiconductor element, removing the detector from the semiconductor element, and the first The metal bump is removed from the semiconductor device. 3. The method for processing and testing a semiconductor device according to item 2 of the scope of patent application, wherein the step of removing the bump is achieved by dry etching. 4. The method for processing and testing a semiconductor device according to item 2 of the scope of patent application, wherein the bump removal step is achieved by wet etching. 5. The method for processing and testing a conductive element in accordance with item 丨 of the scope of the patent application, further comprising removing the detector from the semiconductor element after performing a test step on the semiconductor element; and performing a wire bonding process to 594024 6. Scope of patent application Formation-The second metal bump includes the first metal bump therein and a connecting line is connected between the second metal bump and a substrate or a lead frame. 6. The method for processing and testing a semiconductor device according to item 1 of the scope of the patent application, wherein the 'insulation layer is a passivation layer on the surface of the semiconductor device ° 7. According to the method of item 1 of the scope of patent application A method for processing and testing a semiconductor device, wherein the insulating layer is a metal oxide on the surface of the pad. 8. A method for electrically connecting a semiconductor element to a substrate or a lead frame, wherein the semiconductor element includes a plurality of pads disposed thereon and a first metal bump is formed on each pad and directly contacts the pad The method includes performing a wire bonding process to form a second metal bump, including the first metal bump therein, and a connection line connected between the second metal bump and a substrate or a lead frame. Page 15